WO2018214202A1 - 纳米线栅结构的制作方法 - Google Patents

纳米线栅结构的制作方法 Download PDF

Info

Publication number
WO2018214202A1
WO2018214202A1 PCT/CN2017/089261 CN2017089261W WO2018214202A1 WO 2018214202 A1 WO2018214202 A1 WO 2018214202A1 CN 2017089261 W CN2017089261 W CN 2017089261W WO 2018214202 A1 WO2018214202 A1 WO 2018214202A1
Authority
WO
WIPO (PCT)
Prior art keywords
grid structure
fabricating
substrate
nanowire
thermoplastic substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/089261
Other languages
English (en)
French (fr)
Inventor
李明辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US15/559,425 priority Critical patent/US10710350B2/en
Publication of WO2018214202A1 publication Critical patent/WO2018214202A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B32B37/025—Transfer laminating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/10—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/02—2 layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/42—Polarizing, birefringent, filtering

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method of fabricating a nanowire grid structure.
  • Nano-imprint Lithography was developed by Professor Stephen Y. Chou of the Nanostructure Lab at Princeton University in the mid-1990s for traditional lithography processes.
  • the limitation of the exposure wavelength has reached the limit of preparing a minute structure, and a smaller size cannot be obtained further, and a technique similar to polymer molding is proposed, by which a structural unit having a size of less than 10 nm can be obtained on a semiconductor silicon wafer. .
  • Nanoimprint lithography is different from traditional lithography technology. Nanoimprinting transfers the pattern on the mold directly to the substrate to achieve mass production. Nanoimprint lithography has the advantages of simple processing principle, high resolution, high production efficiency and low cost.
  • the basic idea of NIL is to transfer the pattern to the corresponding substrate through a template.
  • the transferred medium is usually a thin layer of polymer film, which is hardened by hot pressing or irradiation to retain the transferred pattern. .
  • the entire process includes two processes: embossing and graphics transfer.
  • nanowire grid structure means that the grating period is much smaller than the incident light wavelength.
  • the grating, nanowire grid structure has a high extinction ratio for the transverse magnetic field (Transverse Magnetic, TM) and the transverse electric field (Transverse Electric, TE) state light field, and can significantly pass the TM light perpendicular to the direction of the metal line arrangement.
  • TM transverse Magnetic
  • TE Transverse Electric
  • the fabrication process of the conventional nanowire grid structure includes the following steps: Step 1. Providing a substrate 100, and sequentially forming a metal thin film 200 and a photoresist film 300 on the substrate 100; 2. An imprinting mold 400 is provided, and the photoresist film 300 is imprinted by the imprinting mold 400; in step 3, the photoresist film 300 is removed from the imprinting mold 400 to obtain a patterned photoresist layer. 500; Step 4, using the photoresist layer 500 as a shielding metal The film 200 is etched to form a metal wire grid 201; in step 5, the photoresist layer 500 is removed to obtain a nanowire grid structure.
  • the photoresist removal and metal etching processes are very difficult. Therefore, the nanowire grid fabricated by the above method is prone to collapse, photoresist residue, and metal wire gate etching. The problem of unequal etch has seriously affected the performance of the grid polarization, and the production cycle is long, the process is complicated, and the efficiency is low.
  • An object of the present invention is to provide a method for fabricating a nanowire grid structure, which can simplify the fabrication process of the nanowire gate structure, shorten the fabrication time of the nanowire gate structure, and improve the fabrication efficiency and process yield of the nanowire gate structure.
  • the present invention provides a method for fabricating a nanowire grid structure, comprising the following steps:
  • Step S1 providing a thermoplastic substrate and an imprinting mold, hot pressing the thermoplastic substrate by using an imprinting mold, so that the surface of the thermoplastic substrate forms a plurality of grooves and a plurality of protrusions arranged alternately;
  • Step S2 detaching the thermoplastic substrate from the imprinting mold, depositing a metal thin film on the surface of the thermoplastic substrate formed with grooves and protrusions;
  • Step S3 providing a wire grid carrier substrate, using a metal bonding adhesive material to transfer the metal film on the protrusion to the wire grid carrier substrate;
  • Step S4 peeling off the thermoplastic substrate and the metal thin film located in the groove to obtain a nanowire grid structure.
  • the depth of the groove is greater than the thickness of the metal film.
  • thermoplastic substrate is polyethylene, polypropylene, polystyrene, polymethyl methacrylate, polyvinyl chloride, nylon, polycarbonate, polyurethane, polytetrafluoroethylene, polyethylene terephthalate. , thermoplastic polyimide, perfluoropolyether, polycarbonate, polypropylene, polypropylene alcohol, cycloolefin polymer, or siloxane.
  • the material of the metal film is aluminum, chromium, gold, silver, or nickel.
  • the wire grid carrier substrate is a rigid substrate or a flexible substrate.
  • the grooves and the projections are all elongated.
  • the line width of the nanowire grid structure is less than or equal to 200 nm.
  • the temperature at the time of hot pressing in the step S1 is larger than the temperature at which the transfer of the metal film in the step S3 and the peeling of the thermoplastic substrate in the step S4 are performed.
  • the invention also provides a method for fabricating a nanowire grid structure, comprising the following steps:
  • Step S1 providing a thermoplastic substrate and an imprinting mold, hot pressing the thermoplastic substrate by using an imprinting mold, so that the surface of the thermoplastic substrate forms a plurality of grooves and a plurality of protrusions arranged alternately;
  • Step S2 detaching the thermoplastic substrate from the imprinting mold, depositing a metal thin film on the surface of the thermoplastic substrate formed with grooves and protrusions;
  • Step S3 providing a wire grid carrier substrate, using a metal bonding adhesive material to transfer the metal film on the protrusion to the wire grid carrier substrate;
  • Step S4 peeling off the thermoplastic substrate and the metal film located in the groove to obtain a nanowire grid structure
  • the depth of the groove is greater than the thickness of the metal film
  • the material of the thermoplastic substrate is polyethylene, polypropylene, polystyrene, polymethyl methacrylate, polyvinyl chloride, nylon, polycarbonate, polyurethane, polytetrafluoroethylene, polyethylene terephthalate Alcohol esters, thermoplastic polyimides, perfluoropolyethers, polycarbonates, polypropylenes, polypropylene alcohols, cyclic olefin polymers, or siloxanes.
  • the invention provides a method for fabricating a nanowire grid structure, which firstly presses an alternating plurality of grooves and a plurality of protrusions on a thermoplastic substrate through an imprinting mold, and then fabricates the metal film. On the plurality of grooves and the plurality of protrusions, the metal film on the protrusions is transferred onto the wire grid carrier substrate by using a metal bonding adhesive material, and finally the thermoplastic substrate is peeled off to obtain a nanowire grid structure.
  • the entire process does not require photoresist coating, photoresist residual layer removal, and metal etching process, which avoids poor etching precision, difficult to remove photoresist residual layer, and metal etching in the prior art.
  • the problem of collapse of the wire grid structure in the process can simplify the fabrication process of the nanowire gate structure, shorten the fabrication time of the nanowire gate structure, and improve the fabrication efficiency and process yield of the nanowire gate structure.
  • step 1 is a schematic diagram of step 1 of a fabrication process of a conventional nanowire grid structure
  • step 2 is a schematic diagram of step 2 of a fabrication process of a conventional nanowire grid structure
  • step 3 is a schematic diagram of step 3 of a process for fabricating a conventional nanowire grid structure
  • step 4 is a schematic diagram of step 4 of a fabrication process of a conventional nanowire grid structure
  • step 5 is a schematic diagram of step 5 of a fabrication process of a conventional nanowire grid structure
  • FIG. 6 and FIG. 7 are schematic diagrams showing the step S1 of the method for fabricating the nanowire grid structure of the present invention.
  • FIG. 8 and FIG. 9 are schematic diagrams showing the step S2 of the method for fabricating the nanowire grid structure of the present invention.
  • step S3 of the method for fabricating a nanowire grid structure of the present invention
  • step S4 of the method for fabricating a nanowire grid structure of the present invention
  • FIG. 12 is a flow chart of a method of fabricating a nanowire grid structure of the present invention.
  • the present invention provides a method for fabricating a nanowire grid structure, including the following steps:
  • thermoplastic substrate 1 and an imprinting mold 2 are provided.
  • the thermoplastic substrate 1 is hot pressed by the imprinting mold 2, so that the surface of the thermoplastic substrate 1 is alternately arranged.
  • the material of the thermoplastic substrate 1 is polyethylene (PE), polypropylene (PP), polystyrene (PS), polymethyl methacrylate (PMMA), polyvinyl chloride (PVC), nylon (Nylon). ), polycarbonate (PC), polyurethane (PU), polytetrafluoroethylene (PTFE), polyethylene terephthalate (PET), thermoplastic polyimide (TPI), perfluoropolyether (PFPE) ), polycarbonate, polypropylene, polypropylene alcohol, cycloolefin polymer, or siloxane.
  • PE polyethylene
  • PP polypropylene
  • PS polystyrene
  • PMMA polymethyl methacrylate
  • PVC polyvinyl chloride
  • nylon nylon
  • PC polycarbonate
  • PC polyurethane
  • PU polytetrafluoroethylene
  • PET polyethylene terephthalate
  • TPI thermoplastic polyimide
  • PFPE perfluoropolyether
  • thermoplastic substrate 1 is preferably a perfluoropolyether material having a lower surface energy.
  • the surface of the imprinting mold 2 is formed with a plurality of recessed portions 22 and a plurality of raised portions 21 which are alternately arranged, and the depressed portions 22 and the raised portions 21 of the imprinting mold 2 are hot pressed at a high temperature.
  • the thermoplastic substrate 1 is such that a plurality of protrusions 12 and a plurality of grooves 11 are alternately arranged on the surface of the thermoplastic substrate 1.
  • the width of the protrusions 12 corresponds to the line width of the subsequently produced nanowire grid structure.
  • the nanowire grid structure has a line width of less than or equal to 200 nm.
  • the grooves 11 and the protrusions 12 are all elongated to facilitate the formation of a subsequent nanowire grid structure.
  • Step S2 referring to FIG. 8 and FIG. 9, the thermoplastic substrate 1 is detached from the imprinting mold 2, and a metal thin film 3 is deposited on the surface of the thermoplastic substrate 1 on which the grooves 11 and the projections 12 are formed.
  • the material of the metal thin film 3 is aluminum (Al), chromium (Cr), gold (Au), silver (Ag), or nickel (Ni).
  • the depth of the groove 11 is larger than the thickness of the metal thin film 3, so that a certain step is formed when the metal thin film 3 is deposited, and the groove is prevented from being transferred during the subsequent transfer of the metal thin film.
  • the metal thin film 3 in 11 is also transferred.
  • Step S3 referring to FIG. 10, a wire grid carrier substrate 4 is provided, and the metal film 3 on the protrusions 12 is transferred onto the wire grid carrier substrate 4 by a metal bonding adhesive.
  • the wire grid carrier substrate 4 may be a rigid substrate such as a glass substrate or a flexible substrate such as a polyimide substrate, which may be selected according to specific needs.
  • Step S4 referring to FIG. 11, the thermoplastic substrate 1 and the metal thin film 3 located in the recess 11 are peeled off to obtain a nanowire grid structure.
  • the metal thin film 3 is peeled off from the protrusion 12 by the metal bonding adhesive in the step S3, and transferred onto the wire grid carrier substrate 4.
  • the process of peeling off the thermoplastic substrate 1 and the metal thin film 3 located in the groove 11 in the step S4 is performed at a low temperature, that is, the temperature at the time of performing hot pressing in the step S1 is greater than that in the step S3.
  • the method for fabricating the nanowire grid structure provided by the present invention can avoid the prior art without photoresist coating, photoresist residual layer removal, and metal etching process, which can effectively avoid the prior art. Due to poor etching precision, difficulty in removing the photoresist residual layer, and process problems caused by collapse of the wire grid structure during metal etching, the fabrication process of the nanowire gate structure can be simplified, and the fabrication time of the nanowire gate structure can be shortened. Improve the fabrication efficiency and process yield of the nanowire grid structure.
  • the present invention provides a method for fabricating a nanowire grid structure.
  • the method firstly presses an alternating plurality of grooves and a plurality of protrusions on a thermoplastic substrate through an imprinting mold, and then fabricates the metal film.
  • the plurality of grooves and the plurality of protrusions are then transferred to the wire grid carrier substrate by using a metal bonding adhesive material, and finally the thermoplastic substrate is peeled off to obtain a nanowire grid structure.
  • the entire process does not require photoresist coating, photoresist residual layer removal, and metal etching process, which avoids poor etching precision, difficult to remove photoresist residual layer, and metal etching process in the prior art.
  • the problem of collapse of the wire grid structure can simplify the fabrication process of the nanowire gate structure, shorten the fabrication time of the nanowire gate structure, and improve the fabrication efficiency and process yield of the nanowire gate structure.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Polarising Elements (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Abstract

本发明提供一种纳米线栅结构的制作方法，该方法先通过压印模具在热塑性基板上热压出交替的多个凹槽和多个凸起，再将金属薄膜制作在所述多个凹槽和多个凸起上，接着利用金属粘结胶材将所述凸起上的金属薄膜转移到线栅载体基板上，最后剥离热塑性基板，制得纳米线栅结构，相比于现有技术，整个过程无需光阻涂布、光阻残余层去除、以及金属刻蚀制程，避免了现有技术中刻蚀精度不佳、光阻残余层难以去除、以及金属刻蚀过程中的线栅结构塌陷的问题，能够简化纳米线栅结构的制作流程，缩短纳米线栅结构的制作时间，提升纳米线栅结构的制作效率和制程良率。

Description

纳米线栅结构的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及纳米线栅结构的制作方法。
背景技术
纳米压印技术(Nano-imprint Lithography，NIL)是上世纪九十年代中期美国普林斯顿(Princeton)大学纳米结构实验室(Nanostructure Lab)的周郁(Stephen Y.Chou)教授针对传统的光刻工艺受到曝光波长的限制，已经达到制备微小结构的极限，无法进一步获得更小的尺寸，而提出的一种类似于高分子模压的技术，通过该技术可以在半导体硅片上获得尺寸小于10nm的结构单元。
自1995年提出以来，纳米压印已经经过了14年的发展，演变出了多种压印技术，广泛应用于半导体制造、微机电系统(Microelectromechanical Systems，MEMS)、生物芯片、生物医学等领域，被誉为十大改变人类的技术之一。纳米压印光刻有别于传统的光刻技术，纳米压印将模具上的图形直接转移到衬底上，从而达到量产化的目的。纳米压印光刻技术具有加工原理简单，分辨率高，生产效率高，成本低等优点。NIL的基本思想是通过模版，将图形转移到相应的衬底上，转移的媒介通常是一层很薄的聚合物膜，通过热压或者辐照等方法使其结构硬化从而保留下转移的图形。整个过程包括压印和图形转移两个过程。
随着纳米压印技术的发展，人们已经开始制备纳米线栅结构来取代传统的偏光片，来达到对可见光波长范围的光的偏振作用，所谓纳米线栅结构是指光栅周期远小于入射光波长的光栅，纳米线栅结构对于横向磁场(Transverse Magnetic，TM)和横向电场(Transverse Electric，TE)态光场具有很高的消光比，能够显著地透过垂直于金属线排列方向的TM光而反射平行于金属线排列方向的TE光，使得其可以作为高透过率的偏光片结构使用。
具体地，请参阅图1至图5，现有的纳米线栅结构的制作过程包括如下步骤：步骤1、提供一基板100，在所述基板100上依次形成金属薄膜200和光阻薄膜300；步骤2、提供一压印模具400，利用所述压印模具400对所述光阻薄膜300进行压印；步骤3、将光阻薄膜300从压印模具400中脱出，得到图案化的光阻层500；步骤4、利用所述光阻层500为遮挡对金属 薄膜200进行刻蚀，形成金属线栅201；步骤5、去除光阻层500，得到纳米线栅结构。
在目前的技术水平下，对于纳米级的线宽和高度，其光阻去除和金属刻蚀工艺十分困难，因此采用上述方法制作出来的纳米线栅容易出现塌陷、光阻残留、金属线栅刻蚀不均等问题，严重影响线栅的偏光等性能，而且制作周期长，工艺复杂，效率较低。
发明内容
本发明的目的在于提供一种纳米线栅结构的制作方法，能够简化纳米线栅结构的制作流程，缩短纳米线栅结构的制作时间，提升纳米线栅结构的制作效率和制程良率。
为实现上述目的，本发明提供了一种纳米线栅结构的制作方法，包括如下步骤：
步骤S1、提供一热塑性基板和一压印模具，利用压印模具热压所述热塑性基板，使得所述热塑性基板的表面形成交替排列的多个凹槽和多个凸起；
步骤S2、将所述热塑性基板从压印模具中脱离，在所述热塑性基板形成有凹槽和凸起表面上沉积金属薄膜；
步骤S3、提供一线栅载体基板，利用金属粘结胶材将所述凸起上的金属薄膜转移到线栅载体基板上；
步骤S4、剥离热塑性基板及位于所述凹槽内的金属薄膜，制得纳米线栅结构。
所述凹槽的深度大于所述金属薄膜的厚度。
所述热塑性基板的材料为聚乙烯、聚丙烯、聚苯乙烯、聚甲基丙烯酸甲酯、聚氯乙烯、尼龙、聚碳酸酯、聚氨酯、聚四氟乙烯、聚对苯二甲酸乙二醇酯、热塑性聚酰亚胺、全氟聚醚、聚碳酸酯、聚丙烯、聚丙烯醇、环烯烃聚合物、或硅氧烷。
所述金属薄膜的材料为铝、铬、金、银、或镍。
所述线栅载体基板为刚性基板、或柔性基板。
所述凹槽和凸起为均为长条状。
所述纳米线栅结构的线宽小于或等于200nm。
所述步骤S1中进行热压时的温度大于所述步骤S3中进行金属薄膜转移和步骤S4中进行热塑性基板剥离时的温度。
本发明还提供一种纳米线栅结构的制作方法，包括如下步骤：
步骤S1、提供一热塑性基板和一压印模具，利用压印模具热压所述热塑性基板，使得所述热塑性基板的表面形成交替排列的多个凹槽和多个凸起；
步骤S2、将所述热塑性基板从压印模具中脱离，在所述热塑性基板形成有凹槽和凸起表面上沉积金属薄膜；
步骤S3、提供一线栅载体基板，利用金属粘结胶材将所述凸起上的金属薄膜转移到线栅载体基板上；
步骤S4、剥离热塑性基板及位于所述凹槽内的金属薄膜，制得纳米线栅结构；
其中，所述凹槽的深度大于所述金属薄膜的厚度；
其中，所述热塑性基板的材料为聚乙烯、聚丙烯、聚苯乙烯、聚甲基丙烯酸甲酯、聚氯乙烯、尼龙、聚碳酸酯、聚氨酯、聚四氟乙烯、聚对苯二甲酸乙二醇酯、热塑性聚酰亚胺、全氟聚醚、聚碳酸酯、聚丙烯、聚丙烯醇、环烯烃聚合物、或硅氧烷。
本发明的有益效果：本发明提供一种纳米线栅结构的制作方法，该方法先通过压印模具在热塑性基板上热压出交替的多个凹槽和多个凸起，再将金属薄膜制作在所述多个凹槽和多个凸起上，接着利用金属粘结胶材将所述凸起上的金属薄膜转移到线栅载体基板上，最后剥离热塑性基板，制得纳米线栅结构，相比于现有技术，整个过程无需光阻涂布、光阻残余层去除、以及金属刻蚀制程，避免了现有技术中刻蚀精度不佳、光阻残余层难以去除、以及金属刻蚀过程中的线栅结构塌陷的问题，能够简化纳米线栅结构的制作流程，缩短纳米线栅结构的制作时间，提升纳米线栅结构的制作效率和制程良率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的纳米线栅结构的制作过程的步骤1的示意图；
图2为现有的纳米线栅结构的制作过程的步骤2的示意图；
图3为现有的纳米线栅结构的制作过程的步骤3的示意图；
图4为现有的纳米线栅结构的制作过程的步骤4的示意图；
图5为现有的纳米线栅结构的制作过程的步骤5的示意图；
图6和图7为本发明的纳米线栅结构的制作方法的步骤S1的示意图；
图8和图9为本发明的纳米线栅结构的制作方法的步骤S2的示意图；
图10为本发明的纳米线栅结构的制作方法的步骤S3的示意图；
图11为本发明的纳米线栅结构的制作方法的步骤S4的示意图；
图12为本发明的纳米线栅结构的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图12，本发明提供一种纳米线栅结构的制作方法，包括如下步骤：
步骤S1、请参阅图6和图7，提供一热塑性基板1和一压印模具2，利用压印模具2热压所述热塑性基板1，使得所述热塑性基板1的表面形成交替排列的多个凹槽11和多个凸起12。
具体地，所述热塑性基板1的材料为聚乙烯(PE)、聚丙烯(PP)、聚苯乙烯(PS)、聚甲基丙烯酸甲酯(PMMA)、聚氯乙烯(PVC)、尼龙(Nylon)、聚碳酸酯(PC)、聚氨酯(PU)、聚四氟乙烯(PTFE)、聚对苯二甲酸乙二醇酯(PET)、热塑性聚酰亚胺(TPI)、全氟聚醚(PFPE)、聚碳酸酯、聚丙烯、聚丙烯醇、环烯烃聚合物、或硅氧烷等。
进一步地，对于高深宽比的纳米线栅结构的制作，所述热塑性基板1优选表面能较低的全氟聚醚材料。
具体地，所述压印模具2的表面形成有交替排列的多个凹陷部22和多个凸起部21，通过所述压印模具2的凹陷部22和凸起部21在高温下热压所述热塑性基板1，使得热塑性基板1表面相应形成交替排列的多个凸起12和多个凹槽11，所述凸起12的宽度对应后续制得的纳米线栅结构的线宽。优选地，所述纳米线栅结构的线宽小于或等于200nm。
具体地，所述凹槽11和凸起12为均为长条状，以便于后续的纳米线栅结构的形成。
步骤S2、请参阅图8和图9，将所述热塑性基板1从压印模具2中脱离，在所述热塑性基板1形成有凹槽11和凸起12表面上沉积金属薄膜3。
具体地，所述金属薄膜3的材料为铝(Al)、铬(Cr)、金(Au)、银(Ag)、或镍(Ni)。
进一步地，所述凹槽11的深度大于所述金属薄膜3的厚度，从而在金属薄膜3沉积时形成一定的段差，防止后续的金属薄膜转移过程中，凹槽 11中的金属薄膜3也被转移。
步骤S3、请参阅图10，提供一线栅载体基板4，利用金属粘结胶材将所述凸起12上的金属薄膜3转移到线栅载体基板4上。
具体地，所述线栅载体基板4可以为玻璃基板等刚性基板，也可以为聚酰亚胺基板等柔性基板，这都可以根据具体的需要进行选择。
步骤S4、请参阅图11，剥离热塑性基板1及位于所述凹槽11内的金属薄膜3，制得纳米线栅结构。
具体地，相比于所述步骤S1中的高温热压过程，所述步骤S3中通过金属粘结胶材将金属薄膜3从凸起12上剥离，并转印到线栅载体基板4上的过程以及步骤S4中的剥离热塑性基板1及位于所述凹槽11内的金属薄膜3的过程是在低温下进行的，也即所述步骤S1中进行热压时的温度大于所述步骤S3中进行金属薄膜3转移和步骤S4中进行热塑性基板1剥离时的温度，从而利用热塑性基板1的热胀冷缩效应，可以有效保证热塑性基板1的压印和剥离效果，保证纳米线栅结构的制作成功率，避免破坏纳米线栅结构的形状。
重点的是，本发明提供的纳米线栅结构的制作方法，相比于现有技术，整个过程无需光阻涂布、光阻残余层去除、以及金属刻蚀制程，可有效避免现有技术中因刻蚀精度不佳、光阻残余层难以去除、以及金属刻蚀过程中的线栅结构塌陷带来的制程问题，能够简化纳米线栅结构的制作流程，缩短纳米线栅结构的制作时间，提升纳米线栅结构的制作效率和制程良率。
综上所述，本发明提供一种纳米线栅结构的制作方法，该方法先通过压印模具在热塑性基板上热压出交替的多个凹槽和多个凸起，再将金属薄膜制作在所述多个凹槽和多个凸起上，接着利用金属粘结胶材将所述凸起上的金属薄膜转移到线栅载体基板上，最后剥离热塑性基板，制得纳米线栅结构，相比于现有技术，整个过程无需光阻涂布、光阻残余层去除、以及金属刻蚀制程，避免了现有技术中刻蚀精度不佳、光阻残余层难以去除、以及金属刻蚀过程中的线栅结构塌陷的问题，能够简化纳米线栅结构的制作流程，缩短纳米线栅结构的制作时间，提升纳米线栅结构的制作效率和制程良率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (14)

  1. 一种纳米线栅结构的制作方法，包括如下步骤：
    步骤S1、提供一热塑性基板和一压印模具，利用压印模具热压所述热塑性基板，使得所述热塑性基板的表面形成交替排列的多个凹槽和多个凸起；
    步骤S2、将所述热塑性基板从压印模具中脱离，在所述热塑性基板形成有凹槽和凸起表面上沉积金属薄膜；
    步骤S3、提供一线栅载体基板，利用金属粘结胶材将所述凸起上的金属薄膜转移到线栅载体基板上；
    步骤S4、剥离热塑性基板及位于所述凹槽内的金属薄膜，制得纳米线栅结构。
  2. 如权利要求1所述的纳米线栅结构的制作方法，其中，所述凹槽的深度大于所述金属薄膜的厚度。
  3. 如权利要求1所述的纳米线栅结构的制作方法，其中，所述热塑性基板的材料为聚乙烯、聚丙烯、聚苯乙烯、聚甲基丙烯酸甲酯、聚氯乙烯、尼龙、聚碳酸酯、聚氨酯、聚四氟乙烯、聚对苯二甲酸乙二醇酯、热塑性聚酰亚胺、全氟聚醚、聚碳酸酯、聚丙烯、聚丙烯醇、环烯烃聚合物、或硅氧烷。
  4. 如权利要求1所述的纳米线栅结构的制作方法，其中，所述金属薄膜的材料为铝、铬、金、银、或镍。
  5. 如权利要求1所述的纳米线栅结构的制作方法，其中，所述线栅载体基板为刚性基板、或柔性基板。
  6. 如权利要求1所述的纳米线栅结构的制作方法，其中，所述凹槽和凸起为均为长条状。
  7. 如权利要求1所述的纳米线栅结构的制作方法，其中，所述纳米线栅结构的线宽小于或等于200nm。
  8. 如权利要求1所述的纳米线栅结构的制作方法，其中，所述步骤S1中进行热压时的温度大于所述步骤S3中进行金属薄膜转移和步骤S4中进行热塑性基板剥离时的温度。
  9. 一种纳米线栅结构的制作方法，包括如下步骤：
    步骤S1、提供一热塑性基板和一压印模具，利用压印模具热压所述热塑性基板，使得所述热塑性基板的表面形成交替排列的多个凹槽和多个凸 起；
    步骤S2、将所述热塑性基板从压印模具中脱离，在所述热塑性基板形成有凹槽和凸起表面上沉积金属薄膜；
    步骤S3、提供一线栅载体基板，利用金属粘结胶材将所述凸起上的金属薄膜转移到线栅载体基板上；
    步骤S4、剥离热塑性基板及位于所述凹槽内的金属薄膜，制得纳米线栅结构；
    其中，所述凹槽的深度大于所述金属薄膜的厚度；
    其中，所述热塑性基板的材料为聚乙烯、聚丙烯、聚苯乙烯、聚甲基丙烯酸甲酯、聚氯乙烯、尼龙、聚碳酸酯、聚氨酯、聚四氟乙烯、聚对苯二甲酸乙二醇酯、热塑性聚酰亚胺、全氟聚醚、聚碳酸酯、聚丙烯、聚丙烯醇、环烯烃聚合物、或硅氧烷。
  10. 如权利要求9所述的纳米线栅结构的制作方法，其中，所述金属薄膜的材料为铝、铬、金、银、或镍。
  11. 如权利要求9所述的纳米线栅结构的制作方法，其中，所述线栅载体基板为刚性基板、或柔性基板。
  12. 如权利要求9所述的纳米线栅结构的制作方法，其中，所述凹槽和凸起为均为长条状。
  13. 如权利要求9所述的纳米线栅结构的制作方法，其中，所述纳米线栅结构的线宽小于或等于200nm。
  14. 如权利要求9所述的纳米线栅结构的制作方法，其中，所述步骤S1中进行热压时的温度大于所述步骤S3中进行金属薄膜转移和步骤S4中进行热塑性基板剥离时的温度。
PCT/CN2017/089261 2017-05-23 2017-06-20 纳米线栅结构的制作方法 Ceased WO2018214202A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/559,425 US10710350B2 (en) 2017-05-23 2017-06-20 Nanometer wire grid structure fabrication method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710369879.0A CN107170675A (zh) 2017-05-23 2017-05-23 纳米线栅结构的制作方法
CN201710369879.0 2017-05-23

Publications (1)

Publication Number Publication Date
WO2018214202A1 true WO2018214202A1 (zh) 2018-11-29

Family

ID=59820535

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/089261 Ceased WO2018214202A1 (zh) 2017-05-23 2017-06-20 纳米线栅结构的制作方法

Country Status (3)

Country Link
US (1) US10710350B2 (zh)
CN (1) CN107170675A (zh)
WO (1) WO2018214202A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109031498B (zh) * 2018-08-20 2020-10-13 武汉华星光电半导体显示技术有限公司 自组装法制备超薄偏光片的方法、超薄偏光片及显示面板
CN109270620B (zh) * 2018-11-16 2022-07-19 京东方科技集团股份有限公司 金属线栅偏振片的制作方法及显示面板
JP2021009174A (ja) * 2019-06-28 2021-01-28 旭化成株式会社 ワイヤグリッド偏光板
CN111081639B (zh) * 2019-12-05 2022-05-31 深圳市华星光电半导体显示技术有限公司 Cmos薄膜晶体管及其制备方法、显示面板
CN112965288B (zh) * 2021-02-02 2022-04-26 深圳市华星光电半导体显示技术有限公司 内置偏光片的制备方法及偏光片
CN116107003A (zh) * 2021-11-09 2023-05-12 安可光电股份有限公司 一种金属线栅偏极片及其制造方法
CN116544613A (zh) * 2023-04-13 2023-08-04 浙江锂威能源科技有限公司 涂胶隔膜、裸电芯及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101159179A (zh) * 2006-10-03 2008-04-09 精工爱普生株式会社 元件基板及其制造方法
CN102308234A (zh) * 2009-02-05 2012-01-04 旭硝子株式会社 线栅型偏振片及其制造方法
JP4914012B2 (ja) * 2005-02-14 2012-04-11 キヤノン株式会社 構造体の製造方法
US8263194B2 (en) * 2004-12-30 2012-09-11 Industrial Technology Research Institute Color filter and method of fabricating the same
CN103828083A (zh) * 2011-06-29 2014-05-28 伊斯曼柯达公司 电子导电的层压供体元件
CN106324742A (zh) * 2016-10-08 2017-01-11 深圳市华星光电技术有限公司 金属线栅偏光片的制作方法
CN103842861B (zh) * 2011-07-28 2017-03-22 Lg伊诺特有限公司 用于纳米压印的模具的制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8222072B2 (en) * 2002-12-20 2012-07-17 The Trustees Of Princeton University Methods of fabricating devices by low pressure cold welding
KR20080040904A (ko) * 2006-11-06 2008-05-09 엘지전자 주식회사 선격자 편광자의 제조 방법
US9793481B2 (en) * 2008-10-01 2017-10-17 The Regents Of The University Of Michigan Patterning by stamped metal resist
CN102470565B (zh) * 2009-08-07 2015-04-29 综研化学株式会社 压印用树脂制模具及其制造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8263194B2 (en) * 2004-12-30 2012-09-11 Industrial Technology Research Institute Color filter and method of fabricating the same
JP4914012B2 (ja) * 2005-02-14 2012-04-11 キヤノン株式会社 構造体の製造方法
CN101159179A (zh) * 2006-10-03 2008-04-09 精工爱普生株式会社 元件基板及其制造方法
CN102308234A (zh) * 2009-02-05 2012-01-04 旭硝子株式会社 线栅型偏振片及其制造方法
CN103828083A (zh) * 2011-06-29 2014-05-28 伊斯曼柯达公司 电子导电的层压供体元件
CN103842861B (zh) * 2011-07-28 2017-03-22 Lg伊诺特有限公司 用于纳米压印的模具的制造方法
CN106324742A (zh) * 2016-10-08 2017-01-11 深圳市华星光电技术有限公司 金属线栅偏光片的制作方法

Also Published As

Publication number Publication date
US10710350B2 (en) 2020-07-14
CN107170675A (zh) 2017-09-15
US20180339501A1 (en) 2018-11-29

Similar Documents

Publication Publication Date Title
WO2018214202A1 (zh) 纳米线栅结构的制作方法
TWI464020B (zh) A method for making a mold having a three-dimensional microstructure and a mold having a three-dimensional microstructure
JP4340086B2 (ja) ナノプリント用スタンパ、及び微細構造転写方法
WO2019056586A1 (zh) 一种制备光学超构表面的方法
CN103592721B (zh) 一种全聚合物平面光路的制作方法
CN103149615A (zh) 一种多层金属光栅的制备方法
CN101692151A (zh) 一种基于软模板纳米压印技术的硅纳米线制作方法
JP2010284814A (ja) スタンパの製造方法
CN110891895B (zh) 通过选择性模板移除来进行微米和纳米制造的方法
JP2015082624A (ja) 高コントラスト位置合わせマークを備えたモールドの製造方法
JP2008126450A (ja) モールド、その製造方法および磁気記録媒体
Wagner et al. Nanoimprint lithography: Review of aspects and applications
JP2009206519A (ja) ナノプリント用スタンパ、及び微細構造転写方法
US11261085B2 (en) Methods for micro and nano fabrication by selective template removal
JP2013193454A (ja) マスターモールドの製造方法およびモールドの製造方法並びにそれらに使用される表面加工方法
JP2011093123A (ja) 櫛型構造を有する構造体の製造方法、樹脂構造体成形用金型の製造方法および樹脂成形体
KR100724598B1 (ko) 열가소성 고분자 필름을 이용한 나노 임프린트용 스탬프제조 방법
JP2011199136A (ja) インプリント用モールド及びその作製方法並びにパターン転写体
CN106681102A (zh) 纳米压印方法
CN101139082A (zh) 利用加热热塑型聚合物制备纳米图案的方法
Wang et al. Recent Progress in Ultraviolet Nanoimprint Lithography and Its Applications
Hsu et al. Fabrication of flexible nano-wired polarizer by contact-transferred and mask embedded lithography and polyurethane acrylate mold
JPWO2020080372A1 (ja) 微細パターン成形方法、インプリント用モールド製造方法およびインプリント用モールド並びに光学デバイス
JP6260252B2 (ja) インプリントモールド、インプリントモールドの製造方法、及びパターン形成方法
TW200919095A (en) Magnetic conductivity molding plate with creative multiple structural form

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15559425

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17911064

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17911064

Country of ref document: EP

Kind code of ref document: A1