WO2018207972A1 - Transparent and flexible resistive switching memory and method for manufacturing same - Google Patents

Abstract

The present invention relates to a transparent and flexible resistive switching memory to which a transparent electrode having an OMO structure is applied, and a method for manufacturing the same. In addition, the present invention may comprise: a lower electrode laminated on a substrate and formed to have a structure in which an oxide layer, a metal layer, and an oxide layer are sequentially laminated; and an upper electrode laminated on the lower electrode while intersecting the lower electrode, and formed to have a structure in which an oxide layer, a metal layer, and an oxide layer are sequentially laminated, wherein the oxide layers disposed between the metal layer of the lower electrode and the metal layer of the upper electrode at the intersection of the lower electrode and the upper electrode function as resistive switching layers, thereby providing a resistive switching memory which is flexible and transparent while ensuring excellent electrical conductivity.

Description

Transparent and flexible resistance change memory and its manufacturing method

The present invention relates to a transparent and flexible resistance change memory to which a transparent electrode of an OMO structure is applied, and a method of manufacturing the same.

In general, silicon-based flash memory is composed of a field-effect-transistor having a metal-oxide-semiconductor structure. As a limitation is expected, various attempts have been made to develop next-generation memory that can replace the scaling.

Recently, devices that are emerging as next-generation memory are ferroelectric memory (FeRAM), magnetic random-access memory (MRAM), phase-change random access memory (PCRAM) And resistive switching memory (ReRAM).

In particular, the above-described resistive change memory has received the most attention among the next-generation memories because it has a relatively simple structure, nonvolatile, fast switching, excellent endurance and memory retention characteristics.

Meanwhile, in order to realize a transparent and flexible memory device that is emerging as an important issue for future electronic systems, attempts have been made to apply transparent electrodes ITO, IZO, and GZO to a resistance change memory, which is a next-generation memory. Since ITO, IZO, and GZO are easily broken by warpage, there is a problem that it is difficult to develop a transparent and flexible resistance change memory.

In addition, the low electrical conductivity of the conventional transparent electrodes ITO, IZO and GZO is also pointed out as a factor that makes it difficult to develop a transparent and flexible resistance change memory.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide a resistance change memory having high transmittance for light, excellent conductivity, and flexible characteristics and a method of manufacturing the same.

The objects of the present invention are not limited to the above-mentioned objects, and other objects which are not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention for achieving the above object is a lower electrode which is stacked on the substrate, the oxide layer, the metal layer and the oxide layer is formed of a structure that is sequentially stacked; And an upper electrode stacked on top of the lower electrode in an intersecting manner with the lower electrode, and formed of a structure in which an oxide layer, a metal layer, and an oxide layer are sequentially stacked. An oxide layer positioned between a metal layer of an electrode and a metal layer of the upper electrode serves as a resistance change layer.

In a preferred embodiment, the resistance change layer, the conductive filament is generated or lost in the resistance change layer by the voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.

In a preferred embodiment, the lower electrode is patterned into a plurality of rows arranged in parallel at a predetermined interval, the upper electrode is a cross bar array structure of the form orthogonal to the lower electrode, and the predetermined interval Patterned into a plurality of rows arranged in parallel.

In addition, the present invention is stacked on the substrate, the lower electrode formed of a structure in which the oxide layer and the metal layer are sequentially stacked; And an upper electrode stacked on top of the lower electrode in an intersecting manner with the lower electrode, and formed of a structure in which an oxide layer, a metal layer, and an oxide layer are sequentially stacked. An oxide layer positioned between a metal layer of an electrode and a metal layer of the upper electrode serves as a resistance change layer.

In a preferred embodiment, the resistance change layer, the conductive filament is generated or lost in the resistance change layer by the voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.

In a preferred embodiment, the lower electrode is patterned into a plurality of rows arranged in parallel at a predetermined interval, the upper electrode is a cross bar array structure of the form orthogonal to the lower electrode, and the predetermined interval Patterned into a plurality of rows arranged in parallel.

In addition, the present invention is stacked on the substrate, the lower electrode formed of a structure in which the oxide layer, the metal layer and the oxide layer are sequentially stacked; And an upper electrode stacked on top of the lower electrode and having a structure in which a metal layer and an oxide layer are sequentially stacked. The upper electrode includes a metal layer of the lower electrode at an intersection point between the lower electrode and the upper electrode. And an oxide layer between the metal layer of the upper electrode serves as a resistance change layer.

In a preferred embodiment, the resistance change layer, the conductive filament is generated or lost in the resistance change layer by the voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.

In a preferred embodiment, the lower electrode is patterned into a plurality of rows arranged in parallel at a predetermined interval, the upper electrode is a cross bar array structure of the form orthogonal to the lower electrode, and the predetermined interval Patterned into a plurality of rows arranged in parallel.

In a preferred embodiment, the metal layer of the lower electrode and the metal layer of the upper electrode, at least one of gold (Au), silver (Ag), copper (Cu), molybdenum (Mo) and aluminum (Al).

In a preferred embodiment, the oxide layer of the lower electrode and the oxide layer of the upper electrode, zinc oxide (ZnO), titanium oxide (TiO ₂ ), tungsten trioxide (WO ₃ ), hafnium oxide (HfO ₂ ), aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), molybdenum oxide (MoO ₃ ), nickel oxide (NiO), Mn-doped tin oxide (MTO), Zn doped tin oxide (ZTO), Ga doped ZnO (GZO), Sn _x O _y , Zr _x O _y , Co _x O _y , Cr _x O _y , V _x O _y , Nb _x O _y ZnMgBeO, Mg _x O _y , Mg _x N _y , Ti _x N _y , In _x N _y At least one of Ga _x N _y , Ga _x O _y , boron nitride (BN), Ni _x N _y , Si _x N _y , Al doped ZnO (AZO), Mg _x Zn _y O _x and Cu _x O _y do.

In addition, the present invention comprises the steps of: (1) patterning the oxide layer for forming the lower electrode on the substrate in a predetermined pattern; (2) patterning the metal layer in the same pattern on top of the patterned oxide layer; (3) re-patterning an oxide layer in the same pattern on top of the patterned metal layer to form the lower electrode; (4) patterning an oxide layer for formation of an upper electrode on the lower electrode in a predetermined pattern that intersects the lower electrode; (5) patterning a metal layer in the same pattern on top of the oxide layer for forming the upper electrode; And (6) re-patterning the oxide layer in the same pattern on top of the patterned metal layer to form the upper electrode, wherein the oxide layers of steps (3) and (4) are resistive. It provides a method of manufacturing a resistance change memory, characterized in that formed of a change material.

In a preferred embodiment, at the intersection between the lower electrode and the upper electrode, an oxide layer located between the metal layer of the lower electrode and the metal layer of the upper electrode serves as a resistance change layer.

In a preferred embodiment, the resistance change layer, the conductive filament is generated or lost in the resistance change layer by the voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.

In a preferred embodiment, the lower electrode is patterned into a plurality of rows arranged in parallel at a predetermined interval, the upper electrode is a cross bar array structure of the form orthogonal to the lower electrode, and the predetermined interval Patterned into a plurality of rows arranged in parallel.

In addition, the present invention comprises the steps of: (1) patterning the oxide layer for forming the lower electrode on the substrate in a predetermined pattern; (2) forming the lower electrode by patterning a metal layer in the same pattern on top of the patterned oxide layer; (3) patterning an oxide layer for formation of an upper electrode on the lower electrode in a predetermined pattern that intersects the lower electrode; (4) patterning a metal layer in the same pattern on top of the oxide layer for forming the upper electrode; And (5) forming the upper electrode by patterning an oxide layer in the same pattern on the patterned metal layer, wherein the oxide layer of the (3) step is formed of a resistance change material. A method of manufacturing a resistance change memory is provided.

In a preferred embodiment, at the intersection between the lower electrode and the upper electrode, an oxide layer located between the metal layer of the lower electrode and the metal layer of the upper electrode serves as a resistance change layer.

In a preferred embodiment, the resistance change layer, the conductive filament is generated or lost in the resistance change layer by the voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.

In a preferred embodiment, the lower electrode is patterned into a plurality of rows arranged in parallel at a predetermined interval, the upper electrode is a cross bar array structure of the form orthogonal to the lower electrode, and the predetermined interval Patterned into a plurality of rows arranged in parallel.

In addition, the present invention comprises the steps of: (1) patterning the oxide layer for forming the lower electrode on the substrate in a predetermined pattern; (2) patterning the metal layer in the same pattern on top of the patterned oxide layer; (3) patterning the oxide layer in the same pattern on the patterned metal layer to form the lower electrode; (4) patterning a metal layer for forming an upper electrode on the lower electrode in a predetermined pattern that intersects the lower electrode; And (5) forming the upper electrode by patterning an oxide layer in the same pattern on the patterned metal layer, wherein the oxide layer of the (3) step is formed of a resistance change material. A method of manufacturing a resistance change memory is provided.

In a preferred embodiment, at the intersection between the lower electrode and the upper electrode, an oxide layer located between the metal layer of the lower electrode and the metal layer of the upper electrode serves as a resistance change layer.

In a preferred embodiment, the resistance change layer, the conductive filament is generated or lost in the resistance change layer by the voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.

In a preferred embodiment, the lower electrode is patterned into a plurality of rows arranged in parallel at a predetermined interval, the upper electrode is a cross bar array structure of the form orthogonal to the lower electrode, and the predetermined interval Patterned into a plurality of rows arranged in parallel.

In a preferred embodiment, the metal layer of the lower electrode and the metal layer of the upper electrode, at least one of gold (Au), silver (Ag), copper (Cu), molybdenum (Mo) and aluminum (Al).

In a preferred embodiment, the oxide layer of the lower electrode and the oxide layer of the upper electrode, zinc oxide (ZnO), titanium oxide (TiO ₂ ), tungsten trioxide (WO ₃ ), hafnium oxide (HfO ₂ ), aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), molybdenum oxide (MoO ₃ ), nickel oxide (NiO), Mn-doped tin oxide (MTO), Zn doped tin oxide (ZTO), Ga doped ZnO (GZO), _{Sn x O y, Zr x O} y, Co x O y, Cr x O y, V x O y, Nb x O y ZnMgBeO, Mg x O y, Mg x N y, Ti x N y, In x N y At least one of Ga _x N _y , Ga _x O _y , boron nitride (BN), Ni _x N _y , Si _x N _y , Al doped ZnO (AZO), Mg _x Zn _y O _x and Cu _x O _y do.

According to the above-described problem solving means, the present invention is laminated on the substrate and the oxide layer, the metal layer and the oxide layer are formed in a structure that is sequentially stacked, the lower electrode and the upper layer in the form of intersecting the lower electrode and the oxide layer, the metal layer And an upper electrode formed of a structure in which oxide layers are sequentially stacked, wherein an oxide layer positioned between the metal layer of the lower electrode and the metal layer of the upper electrode at the intersection between the lower electrode and the upper electrode functions as a resistance change layer. By doing so, it is possible to provide a flexible and transparent resistance change memory while ensuring excellent electrical conductivity.

In addition, the present invention does not require a separate process for forming the resistance change layer, which can simplify the manufacturing process and reduce the manufacturing cost.

In addition, the present invention can utilize various transparent electrodes having an OMO structure as the lower electrode and the upper electrode, there is an effect that the technology is easy to implement.

1 and 2 are diagrams for explaining a resistance change memory according to a first embodiment of the present invention.

3 is a cross-sectional view of a resistance change memory according to the first embodiment of the present invention.

4 is a view for explaining a conductive filament generated in the resistance change memory according to the first embodiment of the present invention.

5 and 6 are diagrams for explaining a resistance change memory according to a second embodiment of the present invention;

7 is a cross-sectional view of a resistance change memory according to a second embodiment of the present invention.

8 is a view for explaining a conductive filament generated in the resistance change memory according to the second embodiment of the present invention.

9 and 10 are diagrams for describing a resistance change memory according to a third embodiment of the present invention.

Fig. 11 shows a cross section of a resistance change memory according to the third embodiment of the present invention.

12 is a view for explaining a conductive filament generated in the resistance change memory according to the third embodiment of the present invention.

13 is a view for explaining a method of manufacturing a resistance change memory according to the first embodiment of the present invention;

14 is a view for explaining a method of manufacturing a resistance change memory according to the second embodiment of the present invention;

15 is a view for explaining a method of manufacturing a resistance change memory according to the third embodiment of the present invention;

In the following description specific details of the invention have been presented to provide a thorough understanding of the invention, and it is well known in the art that the invention may be readily practiced without these specific details and by modification thereof. It will be self-evident to those who have

Hereinafter, a preferred embodiment according to the present invention will be described in detail with reference to FIGS. 1 to 15, but it will be described based on the parts necessary to understand the operation and action according to the present invention.

1 and 2 are views for explaining a resistance change memory according to a first embodiment of the present invention, Figure 3 is a view showing a cross section of the resistance change memory according to a first embodiment of the present invention, Figure 4 A diagram for describing a conductive filament generated in the resistance change memory according to the first embodiment of the present invention.

1 to 4, the resistance change memory according to the first embodiment of the present invention includes a lower electrode 110 formed by patterning a plurality of rows stacked on the substrate 10 and arranged in parallel at a predetermined interval. And an upper electrode 120 stacked on the lower electrode 110 and patterned into a plurality of rows crossing the lower electrode 110.

That is, the resistance change memory according to the first embodiment of the present invention may be implemented in a cross bar array structure in which the lower electrode 110 and the upper electrode 120 are perpendicular to each other.

The lower electrode 110 may be formed in an oxide-metal-oxide (OMO) structure in which the oxide layer 111, the metal layer 112, and the oxide layer 113 are sequentially stacked on the substrate 10.

The metal layer 112 of the lower electrode 110 is a conductive metal material including at least one of gold (Au), silver (Ag), copper (Cu), molybdenum (Mo), and aluminum (Al), and has a thickness in nanometers. The oxide layers 111 and 113 of the lower electrode 110 may include zinc oxide (ZnO), titanium oxide (TiO ₂ ), tungsten trioxide (WO ₃ ), hafnium oxide (HfO ₂ ), and aluminum oxide ( Al ₂ O ₃ ), aluminum nitride (AlN), molybdenum oxide (MoO ₃ ), nickel oxide (NiO), Mn-doped tin oxide (MTO), Zn doped tin oxide (ZTO), Ga doped ZnO (GZO), Sn _x O _y , Zr _x O _y , Co _x O _y , Cr _x O _y , V _x O _y , Nb _x O _y ZnMgBeO, Mg _x O _y , Mg _x N _y , Ti _x N _y , In _x N _y , of _{Ga x N y, Ga x O} y, boron nitride (BN), Ni x N y, Si x N y, Al doped ZnO (AZO), Mg x Zn y O x , and Cu _x O _y containing at least one It can be formed of a resistance change material.

The upper electrode 120 is formed in an OMO structure in which the oxide layer 121, the metal layer 122, and the oxide layer 123 are sequentially stacked on the lower electrode 110, and the metal layer 122 of the upper electrode 120 is formed. ) May be formed of the above-described conductive metal material, and may also be formed of the above-described resistance change material in the case of the oxide layers 121 and 123 formed on the upper electrode 120.

In addition, the oxide layer 121 at the lowermost end of the upper electrode 120 and the oxide layer 113 at the uppermost end of the lower electrode 110 positioned at the intersection 130 between the lower electrode 110 and the upper electrode 120 are in contact with each other. It may be formed into a structure. In this case, the oxide layers 113 and 121 in contact with each other are preferably formed of the same resistance change material.

The intersection point 130 between the lower electrode 110 and the upper electrode 120 is an oxide of the metal layer 112 of the lower electrode 110, the oxide layer 113 of the lower electrode 110, and the upper electrode 120. The layer 121 and the metal layer 122 of the upper electrode 120 are sequentially stacked.

Accordingly, the oxide layers 113 and 121, which are formed between the metal layer 112 of the lower electrode 110 and the metal layer 122 of the upper electrode 120 and are formed of a resistance change material, function as a resistance change layer. The conductive filament F, which is a local conductive path, is generated by the voltage applied between the electrode 120 and the lower electrode 110, and the resistance state is low in the high resistance state (HRS). SET state changing to Resistance State, LRS) can be made.

In addition, when a reset pulse voltage is applied to the oxide layers 113 and 121 serving as the resistance change layer, the reset pulse voltage is returned to the high resistance state, which means that the aforementioned conductive filament F is lost. That is, 1 bit information corresponding to '1' and '0' may be stored according to the resistance state of the oxide layers 113 and 121 serving as the resistance change layer.

Therefore, the resistance change memory according to the first embodiment of the present invention does not perform a separate process of forming a resistance change layer between the lower electrode 110 and the upper electrode 120 that are orthogonal to each other, but the lower electrode 110 does not perform a separate process. By providing a structure in which a part of) and a part of the upper electrode 120 in contact with it serve as a resistance change layer, it is possible to simplify the manufacturing process and reduce the manufacturing cost.

In addition, the resistance change memory according to the first embodiment of the present invention is applied to the lower electrode 110 and the upper electrode 120 of the OMO structure, to ensure the electrical conductivity compared to the conventional transparent electrodes ITO, IZO and GZO Easy, transparent and flexible memory devices can be implemented.

On the other hand, through the predetermined heat treatment to improve the transmittance of the lower electrode 110 and the upper electrode 120, or the oxide layer 111, 113, 121, 123 formed on the lower electrode 110 and the upper electrode 120, respectively ) And the transmittance may be further improved by adjusting the thicknesses of the metal layers 112 and 122.

In addition, each of the oxide layers 111, 113, 121, and 123 formed on the lower electrode 110 and the upper electrode 120 may not be formed of only one layer, but may be stacked in at least two layers. It may be formed in a multi-layer structure.

Hereinafter, the resistance change memory according to the second embodiment of the present invention will be described.

5 and 6 are views for explaining a resistance change memory according to a second embodiment of the present invention, Figure 7 is a view showing a cross section of the resistance change memory according to a second embodiment of the present invention, Figure 8 A diagram for describing a conductive filament generated in a resistance change memory according to a second exemplary embodiment of the present invention.

5 to 8, a resistance change memory according to a second embodiment of the present invention includes a lower electrode 210 formed by patterning a plurality of rows stacked on top of the substrate 10 and arranged in parallel at regular intervals; And an upper electrode 220 stacked on the lower electrode 210 and patterned into a plurality of rows crossing the lower electrode 210.

That is, even in the resistance change memory according to the second embodiment of the present invention, since the lower electrode 110 and the upper electrode 120 are implemented in a crossbar array structure having a shape orthogonal to each other, the first embodiment of the present invention described above. Although similar to the resistance change memory according to the exemplary embodiment, one oxide layer 211 is formed on the lower electrode 210 and two oxide layers 221 and 223 are formed on the upper electrode 220. There may be differences.

The lower electrode 210 may be formed in a structure in which the oxide layer 211 and the metal layer 212 are sequentially stacked on the substrate 10.

In addition, the metal layer 212 of the lower electrode 210 is a conductive metal material including at least one of gold (Au), silver (Ag), copper (Cu), molybdenum (Mo), and aluminum (Al) as a nanometer unit. The oxide layer 211 of the lower electrode 210 may be formed of zinc oxide (ZnO), titanium oxide (TiO ₂ ), tungsten trioxide (WO ₃ ), hafnium oxide (HfO ₂ ), or aluminum oxide ( Al ₂ O ₃ ), aluminum nitride (AlN), molybdenum oxide (MoO ₃ ), nickel oxide (NiO), Mn-doped tin oxide (MTO), Zn doped tin oxide (ZTO), Ga doped ZnO (GZO), Sn _{x O y, Zr x O y} , Co x O y, Cr x O y, V x O y, Nb x O y ZnMgBeO, Mg x O y, Mg x N y, Ti x N y, In x N y, At least one of Ga _x N _y , Ga _x O _y , boron nitride (BN), Ni _x N _y , Si _x N _y , Al doped ZnO (AZO), Mg _x Zn _y O _x and Cu _x O _y It can be formed of a resistance change material.

The upper electrode 220 is formed in an OMO structure in which the oxide layer 221, the metal layer 222, and the oxide layer 223 are sequentially stacked on the lower electrode 210, and the metal layer 222 of the upper electrode 220. ) May be formed of the above-described conductive metal material, and in the case of the oxide layers 221 and 223 of the upper electrode 220, may be formed of the above-described resistance change material.

Accordingly, the intersection point 230 between the lower electrode 210 and the upper electrode 220 is a metal layer 212 of the lower electrode 210, an oxide layer 221 of the upper electrode 220, and a metal layer of the upper electrode 220. It is to form a structure in which 222 is stacked sequentially.

As a result, the oxide layer 221, which is located between the metal layer 212 of the lower electrode 210 and the metal layer 222 of the upper electrode 220 and is formed of a resistance change material, functions as a resistance change layer, thereby forming an upper electrode ( The conductive process filament F, which is a local conductive path, is generated by the voltage applied between the 220 and the lower electrode 210, and a SET process of changing to a low resistance state (LRS) is performed, or a reset pulse voltage When the resistance state is applied, a reset process may be performed in which the conductive filament F is lost while the resistance state returns from the low resistance state to the high resistance state (HRS).

That is, 1 bit information corresponding to '1' and '0' may be stored according to the resistance state of the oxide layer 221 serving as the resistance change layer.

Therefore, even in the case of the resistance change memory according to the second embodiment of the present invention, a process for forming a separate resistance change layer is not required, and thus it is easier to secure electrical conductivity than conventional transparent electrodes ITO, IZO, and GZO. The implementation of transparent and flexible memory devices allows for a simplified manufacturing process and reduced manufacturing costs.

Hereinafter, the resistance change memory according to the third embodiment of the present invention will be described.

9 and 10 are views for explaining a resistance change memory according to a third embodiment of the present invention, FIG. 11 is a view showing a cross section of the resistance change memory according to a third embodiment of the present invention, and FIG. A diagram for describing a conductive filament generated in a resistance change memory according to a third exemplary embodiment of the present invention.

9 to 12, a resistance change memory according to a third embodiment of the present invention includes a lower electrode 310 formed by patterning a plurality of rows stacked on the substrate 10 and arranged in parallel at a predetermined interval. And an upper electrode 320 stacked on the lower electrode 310 and patterned into a plurality of rows that intersect the lower electrode 310.

That is, even in the resistance change memory according to the third exemplary embodiment of the present invention, the lower electrode 310 and the upper electrode 320 may be implemented in a crossbar array structure in which they cross at right angles. However, in the resistance change memory according to the third embodiment of the present invention, two oxide layers 311 and 313 are formed at the lower electrode 310, and one oxide layer 322 is formed at the upper electrode 320. Will be.

That is, the lower electrode 310 is formed of an OMO structure in which the oxide layer 311, the metal layer 312, and the oxide layer 313 are sequentially stacked on the substrate 10, whereas the upper electrode 320 is the lower electrode. The metal layer 321 and the oxide layer 322 are sequentially stacked on the 310.

In addition, the metal layers 312 and 321 of the lower electrode 310 and the upper electrode 320 include at least one of gold (Au), silver (Ag), copper (Cu), molybdenum (Mo), and aluminum (Al). The conductive metal material may be formed in a thickness of nanometers, and the oxide layers 311, 313, and 322 of the lower electrode 310 and the upper electrode 320 may be formed of zinc oxide (ZnO) or titanium oxide (TiO ₂ ). , Tungsten trioxide (WO ₃ ), hafnium oxide (HfO ₂ ), aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), molybdenum oxide (MoO ₃ ), nickel oxide (NiO), Mn-doped tin oxide (MTO ), Zn doped tin oxide (ZTO), Ga doped ZnO (GZO), Sn _x O _y , Zr _x O _y , Co _x O _y , Cr _x O _y , V _x O _y , Nb _x O _y ZnMgBeO, Mg _x O _y , Mg _x N _y , Ti _x N _y , In _x N _y , Ga _x N _y , Ga _x O _y , boron nitride (BN), Ni _x N _y , Si _x N _y , Al doped ZnO (AZO) , Mg _x Zn _y O _x and Cu _x O _y may be formed of a resistance change material including at least one.

Meanwhile, even in the resistance change memory according to the third embodiment of the present invention, the metal layer 312 and the lower electrode 310 of the lower electrode 310 at the intersection point 330 between the lower electrode 310 and the upper electrode 320. The oxide layer 313 and the metal layer 321 of the upper electrode 320 may be sequentially stacked.

Accordingly, the oxide layer 313 located between the metal layer 312 of the lower electrode 310 and the metal layer 321 of the upper electrode 320 and formed of a resistance change material functions as a resistance change layer, and thus the upper electrode 320. ) And the conductive filament F is generated by the voltage applied between the lower electrode 310 and the resistance state is changed from a high resistance state (HRS) to a low resistance state (LRS). The reset process may be performed by the SET process and a reset pulse voltage, whereby the resistance state is changed from the low resistance state to the high resistance state, and the conductive filament F is lost. According to the resistance state, one bit information corresponding to '1' and '0' can be stored.

Therefore, even in the resistance change memory according to the third embodiment of the present invention, it is easy to ensure the electrical conductivity compared to the conventional transparent electrodes ITO, IZO and GZO, while implementing a transparent and flexible memory device, and at the same time A process for forming the change layer is not required, which simplifies the manufacturing process and reduces the manufacturing cost.

13 is a view for explaining a method of manufacturing a resistance change memory according to the first embodiment of the present invention.

Referring to FIG. 13, first, a substrate 10 on which a resistance change memory is to be prepared is prepared (FIG. 13A).

Next, the oxide layer 111 is patterned in a predetermined pattern in which a plurality of columns are arranged in parallel on the substrate 10, and then the metal layer 112 is patterned in the same pattern thereon, and again the oxide layer ( The lower electrode 110 is formed by patterning 113 (FIG. 13B).

Next, the oxide layer 121 is patterned in a pattern in which a plurality of columns crossing the lower electrode 110 are arranged in parallel on the upper portion of the lower electrode 110, and the metal layer 122 is patterned in the same pattern thereon. After that, the oxide layer 123 is patterned again in the same pattern to form the upper electrode 120 (FIG. 13C).

In this case, the metal layers 112 and 122 of the lower electrode 110 and the upper electrode 120 include at least one of gold (Au), silver (Ag), copper (Cu), molybdenum (Mo), and aluminum (Al). The oxide layers of the lower electrode 110 and the upper electrode 120 may be formed of zinc oxide (ZnO), titanium oxide (TiO ₂ ), tungsten trioxide (WO ₃ ), or hafnium oxide (HfO). ₂ ), aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), molybdenum oxide (MoO ₃ ), nickel oxide (NiO), Mn-doped tin oxide (MTO), Zn doped tin oxide (ZTO), Ga doped ZnO (GZO), Sn _x O _y , Zr _x O _y , Co _x O _y , Cr _x O _y , V _x O _y , Nb _x O _y ZnMgBeO, Mg _x O _y , Mg _x N _y , Ti _x N _y , In _x N _y , Ga _x N _y , Ga _x O _y , boron nitride (BN), Ni _x N _y , Si _x N _y , Al doped ZnO (AZO), Mg _x Zn _y O _x and Cu _x O _y It may be formed of a resistance change material including at least one of.

In addition, the lower electrode 110 and the upper electrode 120 form a cross bar array structure having a shape orthogonal to each other, and at the intersection between the lower electrode 110 and the upper electrode 120, the lower electrode 110 is formed. A structure is formed in which the metal layer 112, the oxide layer 113 of the lower electrode 110, the oxide layer 121 of the upper electrode 120, and the metal layer 122 of the upper electrode 120 are sequentially stacked. .

Therefore, at the intersection between the lower electrode 110 and the upper electrode 120, the oxide layers 113 and 121 positioned between the metal layer 112 of the lower electrode 110 and the metal layer 122 of the upper electrode 120 are resisted. By acting as a change layer, conductive filaments are generated by the voltage applied between the upper electrode 120 and the lower electrode 110 so that the resistance state is low resistance state in the high resistance state (HRS). And a reset process in which the conductive filament F is lost as the resistance state is changed from the low resistance state to the high resistance state by the reset pulse voltage.

That is, 1 bit corresponding to '1' and '0' depending on the resistance state of the oxide layers 113 and 121 positioned at the intersection between the lower electrode 110 and the upper electrode 120 to function as a resistance change layer. A resistance change memory capable of storing information can be manufactured.

Hereinafter, a method of manufacturing a resistance change memory according to a second embodiment of the present invention will be described.

14 is a view for explaining a method of manufacturing a resistance change memory according to a second embodiment of the present invention.

Referring to FIG. 14, first, a substrate 10 on which a resistance change memory is to be prepared is prepared (FIG. 14A).

Next, the oxide layer 211 is patterned in a predetermined pattern in which a plurality of columns are arranged in parallel on the substrate 10, and the metal layer 212 is patterned on the substrate 10 to form the lower electrode 110. (FIG. 14B).

Next, the oxide layer 221 is patterned in a pattern in which a plurality of columns crossing the lower electrode 210 are arranged in parallel on the upper portion of the lower electrode 210, and the metal layer 222 is patterned in the same pattern thereon. Afterwards, the oxide layer 223 may be patterned again in the same pattern to form the upper electrode 220 (FIG. 14C).

Meanwhile, even in the method of manufacturing the resistance change memory according to the second embodiment of the present invention, the lower electrode 210 is made of the same conductive metal material as in the method of manufacturing the resistance change memory according to the first embodiment of the present invention. The metal layer 212 and the metal layer 222 of the upper electrode 220 may be formed, and the oxide layer 211 of the lower electrode 210 and the oxide layers 221 and 223 of the upper electrode may be formed of the resistance change material described above. Can be formed.

In addition, also in the method of manufacturing the resistance change memory according to the second embodiment of the present invention, the lower electrode 210 and the upper portion, as in the manufacturing method of the resistance change memory according to the first embodiment described above The oxide layer 221 located between the metal layer 212 of the lower electrode 210 and the metal layer 222 of the upper electrode 220 at the intersection point between the electrodes 220 functions as a resistance change layer, so that the upper electrode 220 and A SET process in which conductive filaments are generated by a voltage applied between the lower electrodes 210 and the resistance state is changed from a high resistance state (HRS) to a low resistance state (LRS), and reset The reset process may be performed in which the conductive filament F is lost as the resistance state returns from the low resistance state to the high resistance state by the pulse voltage.

Accordingly, 1 bit information corresponding to '1' and '0' is located according to the resistance state of the oxide layer 221 located at the intersection between the lower electrode 210 and the upper electrode 220 and serving as a resistance change layer. It is possible to manufacture a resistance change memory capable of storing a.

Hereinafter, a method of manufacturing a resistance change memory according to a third embodiment of the present invention will be described.

15 is a view for explaining a method of manufacturing a resistance change memory according to a third embodiment of the present invention.

Referring to FIG. 15, first, a substrate 10 on which a resistance change memory is to be prepared is prepared (FIG. 15A).

Next, the oxide layer 311 is patterned in a predetermined pattern in which a plurality of columns are arranged in parallel on the substrate 10, and the metal layer 312 is patterned in the same pattern thereon, and again the oxide layer ( 313 is patterned to form the lower electrode 310 (FIG. 15B).

Next, the metal layer 321 is patterned in a pattern in which a plurality of columns crossing the lower electrode 310 are arranged in parallel on the upper portion of the lower electrode 310, and then the oxide layer 322 is formed in the same pattern thereon. By patterning, the upper electrode 320 is formed (FIG. 15C).

That is, in the method of manufacturing the resistance change memory according to the third embodiment of the present invention, the process of panning the oxide layers 311 and 313 when the lower electrode 310 is formed is performed twice, and the upper electrode 320 is performed. The patterning of the oxide layer 322 is performed once in the formation of.

Meanwhile, even in the method of manufacturing the resistance change memory according to the third embodiment of the present invention, the lower electrode 310 is made of the conductive metal material mentioned in the method of manufacturing the resistance change memory according to the first embodiment of the present invention. The metal layer 312 and the metal layer 321 of the upper electrode 320 may be formed, and the lower electrode 310 as the resistance change material mentioned in the method of manufacturing the resistance change memory according to the first embodiment of the present invention described above. Oxide layers 311 and 313 and an oxide layer 322 of the upper electrode may be formed, and thus redundant description thereof will be omitted.

In addition, the resistance change memory manufactured by the method of manufacturing the resistance change memory according to the third embodiment of the present invention, the metal layer 312 of the lower electrode 310 at the intersection between the lower electrode 310 and the upper electrode 320. And an oxide layer 313 positioned between the metal layer 321 of the upper electrode 320 serves as a resistance change layer, and conductive filaments are generated by a voltage applied between the upper electrode 320 and the lower electrode 310. The process of changing the resistance state from the high resistance state (HRS) to the low resistance state (LRS) and the reset pulse voltage return the resistance state from the low resistance state to the high resistance state. A reset process in which conductive filaments F are lost may be performed, and 1 bit information corresponding to '1' and '0' may be stored according to the resistance state of the oxide layer 313 serving as a resistance change layer. Can be.

Although the preferred embodiments of the present invention have been described above by way of example, the scope of the present invention is not limited to these specific embodiments, and may be appropriately changed within the scope described in the claims.

The present invention can be used to fabricate transparent and flexible resistance change memories.

Claims (21)

1. A lower electrode formed on the substrate and having a structure in which an oxide layer, a metal layer, and an oxide layer are sequentially stacked; And

   And an upper electrode stacked on the upper electrode so as to intersect the lower electrode, and formed of a structure in which an oxide layer, a metal layer, and an oxide layer are sequentially stacked.

   At the intersection between the lower electrode and the upper electrode,

   And an oxide layer located between the metal layer of the lower electrode and the metal layer of the upper electrode serves as a resistance change layer.
2. The method of claim 1,

   The resistance change layer,

   And a conductive filament is generated or lost inside the resistance change layer by a voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.
3. The method of claim 2,

   The lower electrode,

   Patterned into a plurality of rows arranged in parallel at a predetermined interval,

   The upper electrode,

   And a cross bar array structure having a shape orthogonal to the lower electrode, and patterned into a plurality of rows arranged in parallel at predetermined intervals.
4. A lower electrode formed on the substrate and having a structure in which an oxide layer and a metal layer are sequentially stacked; And

   And an upper electrode stacked on the upper electrode so as to intersect the lower electrode, and formed of a structure in which an oxide layer, a metal layer, and an oxide layer are sequentially stacked.

   At the intersection between the lower electrode and the upper electrode,

   And an oxide layer located between the metal layer of the lower electrode and the metal layer of the upper electrode serves as a resistance change layer.
5. The method of claim 4, wherein

   The resistance change layer,

   And a conductive filament is generated or lost inside the resistance change layer by a voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.
6. The method of claim 5,

   The lower electrode,

   Patterned into a plurality of rows arranged in parallel at a predetermined interval,

   The upper electrode,

   And a cross bar array structure having a shape orthogonal to the lower electrode, and patterned into a plurality of rows arranged in parallel at predetermined intervals.
7. A lower electrode formed on the substrate and having a structure in which an oxide layer, a metal layer, and an oxide layer are sequentially stacked; And

   And an upper electrode stacked on top of the lower electrode and having a structure in which a metal layer and an oxide layer are sequentially stacked.

   At the intersection between the lower electrode and the upper electrode,

   And an oxide layer located between the metal layer of the lower electrode and the metal layer of the upper electrode serves as a resistance change layer.
8. The method of claim 7, wherein

   The resistance change layer,

   And a conductive filament is generated or lost inside the resistance change layer by a voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.
9. The method of claim 8,

   The lower electrode,

   Patterned into a plurality of rows arranged in parallel at a predetermined interval,

   The upper electrode,

   And a cross bar array structure having a shape orthogonal to the lower electrode, and patterned into a plurality of rows arranged in parallel at predetermined intervals.
10. (1) patterning an oxide layer for forming a lower electrode on the substrate in a predetermined pattern;

    (2) patterning the metal layer in the same pattern on top of the patterned oxide layer;

    (3) re-patterning an oxide layer in the same pattern on top of the patterned metal layer to form the lower electrode;

    (4) patterning an oxide layer for formation of an upper electrode on the lower electrode in a predetermined pattern that intersects the lower electrode;

    (5) patterning a metal layer in the same pattern on top of the oxide layer for forming the upper electrode; And

    (6) re-patterning an oxide layer in the same pattern on top of the patterned metal layer to form the upper electrode;

    And the oxide layers of steps (3) and (4) are formed of a resistance change material.
11. The method of claim 10,

    At the intersection between the lower electrode and the upper electrode,

    And an oxide layer located between the metal layer of the lower electrode and the metal layer of the upper electrode serves as a resistance change layer.
12. The method of claim 11,

    The resistance change layer,

    And a conductive filament is generated or lost in the resistance change layer by a voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.
13. The method of claim 12,

    The lower electrode,

    Patterned into a plurality of rows arranged in parallel at a predetermined interval,

    The upper electrode,

    And forming a cross bar array structure orthogonal to the lower electrode and patterning the plurality of rows arranged in parallel at predetermined intervals.
14. (1) patterning an oxide layer for forming a lower electrode on the substrate in a predetermined pattern;

    (2) forming the lower electrode by patterning a metal layer in the same pattern on top of the patterned oxide layer;

    (3) patterning an oxide layer for formation of an upper electrode on the lower electrode in a predetermined pattern that intersects the lower electrode;

    (4) patterning a metal layer in the same pattern on top of the oxide layer for forming the upper electrode; And

    (5) forming the upper electrode by patterning an oxide layer in the same pattern on top of the patterned metal layer;

    And the oxide layer of step (3) is formed of a resistance change material.
15. The method of claim 14,

    At the intersection between the lower electrode and the upper electrode,

    And an oxide layer located between the metal layer of the lower electrode and the metal layer of the upper electrode serves as a resistance change layer.
16. The method of claim 15,

    The resistance change layer,

    And a conductive filament is generated or lost in the resistance change layer by a voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.
17. The method of claim 16,

    The lower electrode,

    Patterned into a plurality of rows arranged in parallel at a predetermined interval,

    The upper electrode,

    And forming a cross bar array structure orthogonal to the lower electrode and patterning the plurality of rows arranged in parallel at predetermined intervals.
18. (1) patterning an oxide layer for forming a lower electrode on the substrate in a predetermined pattern;

    (2) patterning the metal layer in the same pattern on top of the patterned oxide layer;

    (3) patterning the oxide layer in the same pattern on the patterned metal layer to form the lower electrode;

    (4) patterning a metal layer for forming an upper electrode on the lower electrode in a predetermined pattern that intersects the lower electrode; And

    (5) forming the upper electrode by patterning an oxide layer in the same pattern on top of the patterned metal layer;

    And the oxide layer of step (3) is formed of a resistance change material.
19. The method of claim 18,

    At the intersection between the lower electrode and the upper electrode,

    And an oxide layer located between the metal layer of the lower electrode and the metal layer of the upper electrode serves as a resistance change layer.
20. The method of claim 19,

    The resistance change layer,

    And a conductive filament is generated or lost in the resistance change layer by a voltage applied between the metal layer of the upper electrode and the metal layer of the lower electrode.
21. The method of claim 20,

    The lower electrode,

    Patterned into a plurality of rows arranged in parallel at a predetermined interval,

    The upper electrode,

    And forming a cross bar array structure orthogonal to the lower electrode and patterning the plurality of rows arranged in parallel at predetermined intervals.

Images