WO2018207793A1 - 部品製造用具及び部品製造方法 - Google Patents
部品製造用具及び部品製造方法 Download PDFInfo
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- WO2018207793A1 WO2018207793A1 PCT/JP2018/017833 JP2018017833W WO2018207793A1 WO 2018207793 A1 WO2018207793 A1 WO 2018207793A1 JP 2018017833 W JP2018017833 W JP 2018017833W WO 2018207793 A1 WO2018207793 A1 WO 2018207793A1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Definitions
- the present invention relates to a component manufacturing tool and a component manufacturing method. More specifically, the present invention relates to a component manufacturing tool used for manufacturing a semiconductor component, a component manufacturing method for manufacturing a semiconductor component, a component manufacturing tool used for manufacturing an electronic component, and a component manufacturing method for manufacturing an electronic component.
- Patent Document 2 a ring frame (“first frame 5” in Patent Document 2) in which a film is stretched is used in the singulation process (see FIG. 7A of Patent Document 2). Thereafter, when shifting to the pickup process, the grip ring (“second frame 7” in Patent Document 2) is used (see FIGS. 8C and 8D of Patent Document 2). By picking up the film by the grip ring, the gap between the parts on the film is widened to ensure pick-up property. Further, by using the grip ring, only a necessary area where the component is attached can be separated from the ring frame and used. However, Patent Document 2 does not specifically disclose a film that enables such an operation. Moreover, in patent document 2, the evaluation process is not assumed.
- the evaluation process includes evaluation using heat addition such as operation confirmation under a warming environment and acceleration evaluation using a thermal stress load. Therefore, in addition to the mechanical strength and flexibility required for singulation and pickup, the carrier is required to have heat resistance and mechanical strength and flexibility after thermal endurance. No consideration has been given to.
- Patent Document 1 discloses a carrier that can be used in an evaluation process. That is, by using a film that has been heat-shrinked in advance as a carrier, there is room for expansion in the subsequent process, and the deviation between the electrode pad 111 for evaluation and the bump 103 caused by the difference in thermal expansion (Patent Document 1 [Fig. 15])).
- Patent Document 1 [Fig. 15]
- the shrinkage / extension of the film due to the influence of heat influences the positional accuracy in the evaluation process, and in the manufacturing process including the evaluation process, compared to the manufacturing process in which only the singulation and the pickup are performed, It can be seen that a high level of heat countermeasures is required.
- suction failure is not examined.
- the present inventors examined various materials and repeated the test to select a carrier material that can balance more required characteristics. As a result, it has been found that if a material that is flexible enough to form a gap between components is selected as a film in order to obtain pick-up properties, the carrier cannot be fixed to the chuck table. That is, when the carrier is sucked and fixed to the heated chuck table, wrinkles are generated in the film, causing airtight leakage from the wrinkled portion, which may cause a problem that the carrier cannot be normally sucked to the chuck table. I understood.
- the present invention has been made in view of the above problems, and provides a component manufacturing tool that can be reliably adsorbed to a chuck table even in a heating environment, and a component manufacturing method using the component manufacturing tool. For the purpose.
- the component manufacturing tool according to [1] is a component manufacturing tool used in a semiconductor component manufacturing method or an electronic component manufacturing method, A frame having an opening, and a holding film covering the opening and stretched on the frame,
- the frame body includes a ring-shaped first frame and a ring-shaped second frame that can be engaged with the first frame;
- the holding film includes a base layer and a holding layer provided on one surface side of the base layer, and is held in a stretched state between the first frame and the second frame,
- the part manufacturing tool according to [2] is characterized in that, in the part manufacturing tool according to [1], the linear thermal expansion coefficient of the base layer is 100 ppm / K or more.
- the component manufacturing tool according to [3] is the component manufacturing tool according to claim 1 or 2, wherein the base layer is at least one of a thermoplastic polyester elastomer, a thermoplastic polyamide elastomer, and polybutylene terephthalate. The main point is to include seeds.
- the component manufacturing tool according to [4] is the component manufacturing tool according to any one of [1] to [3], wherein the manufacturing method includes a semiconductor component, a precursor of the semiconductor component, an electronic component, and A plurality of components selected from the precursors of the electronic components are provided with an adsorption step of adsorbing and fixing the holding film in a state of being held by the holding layer to the surface of a heated chuck table. Is the gist.
- the component manufacturing tool according to [5] is characterized in that, in the component manufacturing tool according to [4], an evaluation step for evaluating the component held by the holding film is provided after the adsorption step.
- the part manufacturing tool according to [6] is the part manufacturing tool according to [5], wherein after the evaluation step, only a part of the parts is moved from the base layer side toward the holding layer side.
- the gist of the invention is to provide a pick-up process in which the holding film is further extended by pushing and pushing away from the other components.
- the component manufacturing method according to [7] includes a frame having an opening, and a holding film that covers the opening and is stretched on the frame.
- the frame body includes a ring-shaped first frame and a ring-shaped second frame that can be engaged with the first frame;
- the holding film includes a base layer and a holding layer provided on one surface side of the base layer, and is held in a stretched state between the first frame and the second frame,
- ⁇ R E1 ⁇ 1 and E ′ (25) is 35 MPa or more and 3500 MPa or less on the holding layer of the component manufacturing tool, the semiconductor component, the semiconductor component precursor, the electronic component, and the electronic component A component holding step for holding a plurality of components selected from precursors;
- the gist of the present invention is to provide an adsorption step of adsorbing and fixing the holding film holding the components on the surface of a heated chuck table.
- the part manufacturing method according to [8] is characterized in that, in the part manufacturing method according to [7], an evaluation step for evaluating the component held by the holding film is provided after the adsorption step.
- the gist of the present invention is to provide a pick-up process in which the holding film is further extended by pushing and pushing to separate the holding film from the other parts.
- This part manufacturing tool can be reliably adsorbed to the chuck table even in a heated environment. For this reason, in the component manufacturing method in which the evaluation process including the heating environment is interposed, the component manufacturing can be performed using the component manufacturing tool. Moreover, a carrier can be shared in each process of evaluation and pick-up by using this tool for manufacturing parts.
- the part manufacturing tool can be reliably adsorbed to the chuck table even in a heating environment. For this reason, this part manufacturing method in which the evaluation process including a heating environment is interposed can be performed. Further, according to this manufacturing method, the carrier can be shared in each process of evaluation and pickup.
- the component manufacturing tool (1) is a component manufacturing tool (1) used in the method for manufacturing the component (50).
- the component (50) includes a semiconductor component (51) and an electronic component (54).
- the component manufacturing tool (1) includes a frame (10) having an opening (10h), and a holding film (20) that covers the opening (10h) and is stretched on the frame (10).
- the frame (10) includes a ring-shaped first frame (11) and a ring-shaped second frame (12) that can be engaged with the first frame (11).
- the holding film (20) is held in a stretched state by being sandwiched between the first frame (11) and the second frame (12).
- the holding film (20) includes a base layer (21) and a holding layer (22) provided on the one surface (21a) side of the base layer (21).
- the component manufacturing tool 1 having the above-described configuration, it is possible to provide a component manufacturing tool that can be reliably attracted to the chuck table even in a heating environment. That is, even if the component manufacturing tool 1 is sucked and fixed to the heated chuck table, no wrinkles are generated on the holding film 20 stretched on the frame 10 and no airtight leakage occurs. Can be sucked and fixed to the chuck table normally. Thereby, normal evaluation can be performed in an evaluation process. That is, for example, at the time of evaluation, it is possible to prevent the unintentional deviation between the component 50 to be evaluated and the evaluation device (for example, a probe) from the unintended and perform the evaluation normally.
- the evaluation device for example, a probe
- a gap can be formed between the separated parts before the evaluation process, so that the parts can be moved between the individualization process and the evaluation process. It is possible to prevent contact and prevent problems that may occur due to contact between components during this transition.
- circulation form of this component manufacture tool 1 are not specifically limited, At the time of utilization, it will be in the state by which the component 50 was mounted on the holding
- the chuck table is a device having a table (top plate) having a smooth top surface, and the holding film 20 stretched on the frame body 10 is sucked to the smooth top surface by suction. It is a device that can be made to.
- the above-mentioned table is not particularly limited, but usually has a suckable structure. That is, for example, a molded body (metal molded body, ceramic molded body, resin molded body, etc.) having a suction route such as a suction hole or a suction groove, or a porous molded body (metal molded body, ceramic molded body, resin molded body). Body, etc.) can be used.
- the frame body 10 (see FIG. 2) includes a first frame 11 and a second frame 12.
- the first frame 11 has a ring shape and has an opening 11h.
- the second frame 12 has a ring shape and has an opening 12h.
- the first frame 11 and the second frame 12 are engageable. By engaging the first frame 11 and the second frame 12, the first frame 11 and the second frame 12 are integrated into a frame. Make body 10. Further, by engaging the first frame 11 and the second frame 12, the opening 11h and the opening 12h are integrated to form the opening 10h.
- the constituent materials of the first frame 11 and the second frame 12 are not limited, and various organic materials (resins, elastomers, etc.) and inorganic materials (metals, ceramics, etc.) can be used as needed.
- the organic material include polycarbonate resin, ABS resin, polyester resin (aromatic polyester resin, liquid crystalline polyester resin, etc.), polyamide resin (aromatic polyamide resin, etc.), polyimide resin, polyamideimide resin, and the like. It is done. These may use only 1 type and may use 2 or more types together.
- reinforcing materials such as inorganic material filler, inorganic material reinforcement (fiber glass fiber, carbon fiber, etc.), organic material filler, organic material reinforcement fiber (aromatic polyamide resin fiber, etc.), etc. it can.
- inorganic material filler inorganic material reinforcement (fiber glass fiber, carbon fiber, etc.), organic material filler, organic material reinforcement fiber (aromatic polyamide resin fiber, etc.), etc.
- organic material reinforcement fiber aromatic polyamide resin fiber, etc.
- the form of engagement between the first frame 11 and the second frame 12 is not limited.
- an engagement form in which the outer diameter of the first frame 11 is made smaller than the inner diameter of the second frame 12 can be mentioned.
- the inner periphery of the second frame 12 can be fitted into the outer periphery of the first frame 11 and engaged.
- the holding film 20 can be sandwiched between the outer peripheral surface of the first frame 11 and the inner peripheral surface of the second frame 12, and the stretched state can be maintained (see FIG. 1B ').
- FIG. 1A and FIG. 1B an engagement form in which the outer diameter of the first frame 11 is made smaller than the inner diameter of the second frame 12 can be mentioned.
- the inner periphery of the second frame 12 can be fitted into the outer periphery of the first frame 11 and engaged.
- the holding film 20 can be sandwiched between the outer peripheral surface of the first frame 11 and the inner peripheral surface of the second frame 12, and the stretched state can be maintained (see FIG. 1B ').
- the engaging convex portion 111 is provided on the outer peripheral surface of the first frame 11, and the engaging concave portion 121 is provided on the inner peripheral surface of the second frame 12.
- the first frame 11 has a shape that is notched so that a part of the outer diameter is smaller than the inner diameter of the second frame 12. Can have. With this shape, it is possible to prevent the second frame 12 from falling off to the side opposite to the fitting side of the first frame 11 during and after the engagement.
- the engagement may be possible only by adjusting the engagement clearance between the first frame 11 and the second frame 12, but the engagement state can be maintained by using, for example, magnetic force.
- the first frame 11 and the second frame 12 are stacked and engaged vertically, and the lower surface of the first frame 11 and the second frame 12 are engaged.
- the holding film 20 may be sandwiched between the upper surface of the film and the film may be held while being stretched.
- a magnet can be embedded in each of the first frame 11 and the second frame 12 so that the lower surface of the first frame 11 and the upper surface of the second frame 12 can be engaged by magnetic force.
- the holding film 20 is a film that is held between the first frame 11 and the second frame 12 in a stretched state.
- the holding film 20 includes a base layer 21 and a holding layer 22 provided on the one surface 21a side (see FIGS. 1, 3 and 6).
- the “E ′ (100)” represents the tensile elastic modulus of the base layer 21 at 100 ° C.
- the “E ′ (25)” represents the tensile elastic modulus of the base layer 21 at 25 ° C.
- the arrangement of the base layer 21 and the holding layer 22 in FIGS. 1 and 3 is an example. That is, although both FIG.1 and FIG.3 has shown the example in which the base layer 21 was arrange
- E ′ (25) of the base layer 21 is 35 MPa ⁇ E ′ (25) ⁇ 3500 MPa or less, even if the frame body 10 is held in the stretched state, it is stretched when picking up from that state. It can have the flexibility that can be made. Furthermore, since R E1 ⁇ 1, it is possible to prevent the hot film from being generated in the holding film 20 in a heating environment, and the component manufacturing tool 1 that can be reliably attracted to the chuck table can be obtained. In addition, when R E1 is R E1 ⁇ 0.2, the component manufacturing tool 1 can be easily separated from the chuck table heated during the evaluation after the evaluation.
- the problem is as described above by giving the holding film 20 the property that 0.2 ⁇ R E1 ⁇ 1 and E ′ (25) is 35 MPa or more and 3500 MPa or less. This makes it possible to manufacture parts.
- the ratio R E1 is preferably 0.2 ⁇ R E1 ⁇ 1, more preferably 0.23 ⁇ R E1 ⁇ 0.90, and further 0.24 ⁇ R E1 ⁇ 0.80.
- 0.30 ⁇ R E1 ⁇ 0.78, more preferably 0.32 ⁇ R E1 ⁇ 0.75, further preferably 0.35 ⁇ R E1 ⁇ 0.70, 0.38 ⁇ R E1 ⁇ 0.65 is preferable.
- E ′ (25) is preferably 38 MPa ⁇ E ′ (25) ⁇ 3000 MPa, more preferably 40 MPa ⁇ E ′ (25) ⁇ 2000 MPa, 42 MPa ⁇ E ′ (25) ⁇ 1000 MPa is preferable, 44 MPa ⁇ E ′ (25) ⁇ 700 MPa is further preferable, 46 MPa ⁇ E ′ (25) ⁇ 500 MPa is further preferable, and 48 MPa ⁇ E ′ (25) ⁇ . 350 MPa is preferable, 50 MPa ⁇ E ′ (25) ⁇ 250 MPa is more preferable, and 51 MPa ⁇ E ′ (25) ⁇ 150 MPa is more preferable.
- the value of E ′ (25) may be different in the MD direction and TD direction of the base layer, but is preferably in the above-described range in both the MD direction and TD direction of the base layer.
- E ′ (100) is preferably 10 MPa ⁇ E ′ (100) ⁇ 2000 MPa, more preferably 15 MPa ⁇ E ′ (100) ⁇ 800 MPa, further preferably 17 MPa ⁇ E ′ (100) ⁇ 300 MPa, 20 MPa ⁇ E ′ (100) ⁇ 150 MPa, more preferably 25 MPa ⁇ E ′ (100) ⁇ 50 MPa, further preferably 26 MPa ⁇ E ′ (100) ⁇ 45 MPa, and further 27 MPa ⁇ E ′ (100). ⁇ 42 MPa is preferred.
- the value of E ′ (100) may be different in the MD direction and TD direction of the base layer, but is preferably in the above-described range in both the MD direction and TD direction of the base layer.
- each above-mentioned elasticity modulus E 'regarding a base layer is measured with a dynamic viscoelasticity measuring apparatus (DMA: Dynamic Mechanical Analysis).
- DMA Dynamic Mechanical Analysis
- the sample size is 10 mm wide, the length between chucks is 20 mm, and each temperature is determined from data obtained by measuring from ⁇ 50 ° C. to 200 ° C. under measurement conditions of a frequency of 1 Hz and a heating rate of 5 ° C./min. It is obtained by reading the data. That is, the value at 25 ° C. is the tensile elastic modulus E ′ (25) (unit is MPa), and the value at 100 ° C. is the tensile elastic modulus E ′ (100) (unit is MPa).
- the base layer 21 of the holding film 20 used for this component manufacturing tool 1 is 0.2 ⁇ R E1 ⁇ 1 and E ′ (25 In addition to being 35 MPa or more and 3500 MPa or less, it is preferable to have a further characteristic. Specifically, the ratio between the elastic modulus E ′ (160) at 160 ° C. and the elastic modulus E ′ ( ⁇ 40) at ⁇ 40 ° C.
- the ratio R E2 is preferably 0.001 or more and 1 or less (0.001 ⁇ R E2 ⁇ 1).
- E ′ (160) represents the tensile elastic modulus of the base layer at 160 ° C.
- E ′ ( ⁇ 40) represents the tensile elastic modulus of the base layer at ⁇ 40 ° C.
- the evaluation process is performed in each temperature range of 100 ° C. or higher and 160 ° C. or lower and -40 ° C. or higher and 0 ° C. or lower when parts are manufactured. Even if it did, when picking up components 50 from holding film 20 after that, the flexibility of holding film 20 which is easy to pick up can be maintained. That is, the holding film 20 is stretched in a stretched state on the frame body 10 in a normal state, and in that state, high temperature and low temperature (regardless of the order of load) are imposed in the evaluation process. Thereafter, in the pickup process, the holding film 20 can be further extended for pickup from the previously applied extension state without breaking.
- the holding film 20 at the pushed-up portion is expanded without breaking, and only a desired part protrudes upward from the other parts and is picked up by the pick-up device 93. Can be made easier.
- the above-mentioned ratio R E2 is preferably 0.001 ⁇ R E2 ⁇ 1, more preferably 0.005 ⁇ R E2 ⁇ 0.7, and further preferably 0.007 ⁇ R E2 ⁇ 0.5. 0.01 ⁇ R E2 ⁇ 0.3, 0.012 ⁇ R E2 ⁇ 0.2 is more preferable, 0.014 ⁇ R E2 ⁇ 0.1 is more preferable, and 0.016 ⁇ R E2 ⁇ 0.05 is preferable, and 0.018 ⁇ R E2 ⁇ 0.04 is more preferable. In these preferable ranges, the flexibility of the holding film 20 can be particularly favorably maintained even after a hot cycle.
- E ′ ( ⁇ 40) is preferably 10 MPa ⁇ E ′ ( ⁇ 40) ⁇ 4500 MPa.
- the holding film 20 maintains good flexibility even when a low temperature environment is used in the evaluation process. be able to. As described above, evaluation of manufactured parts can be performed at a low temperature as well as at a high temperature. Under a low temperature, the tensile elastic modulus E ′ of the base layer 21 inevitably becomes larger than under a high temperature.
- the holding film 20 stretched on the frame body 10 in the stretched state can maintain the flexibility that is not broken even when it undergoes a low temperature during evaluation.
- a material excellent in high temperature heat resistance is usually a material having a high high temperature tensile elastic modulus, and the tensile elastic modulus of such a material becomes higher at a low temperature, making it difficult to withstand the above-described situation.
- the ratio R E2 of the base layer 21 is 0.01 ⁇ R E2 ⁇ 1 and E ′ ( ⁇ 40) is 10 MPa ⁇ E ′ ( ⁇ 40) ⁇ 4500 MPa, Can satisfy the demand.
- E ′ ( ⁇ 40) is further preferably 50 MPa ⁇ E ′ ( ⁇ 40) ⁇ 4300 MPa, more preferably 100 MPa ⁇ E ′ ( ⁇ 40) ⁇ 3000 MPa, and further 120 MPa ⁇ E ′ ( ⁇ 40) ⁇ 2000 MPa.
- E ′ ( ⁇ 40) may be different in the MD direction and TD direction of the base layer, but is preferably in the above-mentioned range in both the MD direction and TD direction of the base layer.
- E ′ (160) is preferably 0.1 MPa ⁇ E ′ (160) ⁇ 600 MPa, more preferably 0.15 MPa ⁇ E ′ (160) ⁇ 450 MPa, and further 0.2 MPa ⁇ E ′ (160).
- E ′ (160) may be different in the MD direction and TD direction of the base layer, but is preferably in the above-described range in both the MD direction and TD direction of the base layer.
- each elastic modulus E 'regarding the base layer 21 is measured by a dynamic viscoelasticity measuring apparatus (DMA: Dynamic Mechanical Analysis).
- DMA Dynamic Mechanical Analysis
- the sample size is 10 mm wide
- the length between chucks is 20 mm
- each temperature is determined from data obtained by measuring from ⁇ 50 ° C. to 200 ° C. under measurement conditions of a frequency of 1 Hz and a heating rate of 5 ° C./min. It is obtained by reading the data. That is, the value at ⁇ 40 ° C. is the tensile elastic modulus E ′ ( ⁇ 40), and the value at 160 ° C. is the tensile elastic modulus E ′ (160).
- the linear thermal expansion coefficient of the base layer 21 is not limited, it is preferably 100 ppm / K or more.
- examples of such materials include thermoplastic elastomers as will be described later. That is, the thermoplastic elastomer is a material having a relatively large linear thermal expansion coefficient, and the large linear thermal expansion coefficient is considered to be a driving factor that causes deformation of the holding film 20 at a high temperature.
- the holding film 20 using the base layer 21 having a linear thermal expansion coefficient of 100 ppm / K or more tends to cause defects such as wrinkles due to wrinkles and the like particularly in a heating environment.
- the R E1 is set to 0.2 ⁇ R E1 ⁇ 1 and E ′ (25) is set to 35 MPa or more and 3500 MPa.
- the linear thermal expansion coefficient is preferably 100 ppm / K or more and 300 ppm / K or less, more preferably 130 ppm / K or more and 280 ppm / K or less, further preferably 150 ppm / K or more and 250 ppm / K or less, and further 165 ppm / K or more. 240 ppm / K or less is more preferable.
- This linear thermal expansion coefficient is measured according to JIS K7197, and is defined as a thermal expansion coefficient between a temperature of 50 ° C. and 190 ° C.
- the thickness of the base layer 21 is not limited, but may be, for example, 50 ⁇ m to 200 ⁇ m, preferably 60 ⁇ m to 185 ⁇ m, and more preferably 70 ⁇ m to 170 ⁇ m.
- stretching of a base layer does not ask
- the base layer 21 is not particularly limited as long as it has the above-described various characteristics and can support the holding layer 22.
- a resin is preferable.
- a resin is preferable.
- a resin having sufficient flexibility (dynamic stretchability) is preferable, and a resin having an elastomeric property is particularly preferable.
- thermoplastic elastomers examples include thermoplastic elastomers and silicones. These may use only 1 type and may use 2 or more types together. Of these, thermoplastic elastomers are preferred because those having thermoplasticity are preferred.
- the thermoplastic elastomer may be composed of a block copolymer having a hard segment and a soft segment, or may be composed of a polymer alloy of a hard polymer and a soft polymer, and has both of these characteristics. Also good.
- the ratio can be, for example, 30% by mass or more and 100% by mass or less with respect to the entire resin constituting the base layer 21. That is, the resin constituting the base layer 21 may be composed only of a thermoplastic elastomer. Further, the ratio of the thermoplastic elastomer is preferably 50% by mass or more and 100% by mass or less, and more preferably 70% by mass or more and 100% by mass or less.
- thermoplastic elastomer includes polyester-based thermoplastic elastomer, polyamide-based thermoplastic elastomer, styrene-based thermoplastic elastomer, olefin-based thermoplastic elastomer, vinyl chloride-based thermoplastic elastomer, polyimide-based thermoplastic elastomer (polyimide ester). System, polyimide urethane system, etc.). These may use only 1 type and may use 2 or more types together.
- polyester-based thermoplastic elastomers polyamide-based thermoplastic elastomers, and polyimide-based thermoplastic elastomers are preferable, and polyester-based thermoplastic elastomers and / or polyamide-based thermoplastic elastomers are particularly preferable.
- the polyester-based thermoplastic elastomer may have any configuration except that the polyester component is a hard segment.
- the soft segment polyester, polyether, polyether ester, and the like can be used. These may use only 1 type and may use 2 or more types together. That is, for example, the polyester component constituting the hard segment can include a structural unit derived from a monomer such as dimethyl terephthalate.
- the component constituting the soft segment can include structural units derived from monomers such as 1,4-butanediol and poly (oxytetramethylene) glycol. More specifically, a PBT-PE-PBT type polyester-based thermoplastic elastomer can be used.
- polyester-based thermoplastic elastomers “Primalloy (trade name)” manufactured by Mitsubishi Chemical Corporation, “Hytrel” (trade name) manufactured by Toray DuPont, “Perprene (trade name)” manufactured by Toyobo Co., Ltd., RIKEN TECHNOS “Hyper Alloy Actimer (trade name)” manufactured by Co., Ltd. These may use only 1 type and may use 2 or more types together.
- the polyamide-based thermoplastic elastomer may have any configuration except that the polyamide component is a hard segment.
- the soft segment polyester, polyether, polyether ester, and the like can be used. These may use only 1 type and may use 2 or more types together. That is, for example, the polyamide component constituting the hard segment includes polyamide 6, polyamide 11 and polyamide 12. These may use only 1 type and may use 2 or more types together.
- various lactams and the like can be used as monomers.
- a component which comprises a soft segment the structural unit derived from monomers, such as dicarboxylic acid, and polyether polyol can be included.
- polyether polyol polyether diol
- examples thereof include poly (tetramethylene) glycol and poly (oxypropylene) glycol. These may use only 1 type and may use 2 or more types together. More specifically, polyether amide type polyamide thermoplastic elastomers, polyester amide type polyamide thermoplastic elastomers, polyether ester amide type polyamide thermoplastic elastomers and the like can be mentioned.
- polyamide-based thermoplastic elastomer “Pebax (trade name)” manufactured by Arkema Co., Ltd., “Daiamide (trade name)” manufactured by Daicel Evonik Co., Ltd., “Vestamide (trade name)” manufactured by Daicel Evonik Co., Ltd., Examples include “UBESTA XPA (trade name)” manufactured by Ube Industries, Ltd. These may use only 1 type and may use 2 or more types together.
- the base layer 21 includes a resin other than the thermoplastic elastomer
- examples of such a resin include polyester, polyamide, polycarbonate, acrylic resin, and the like. These may use only 1 type and may use 2 or more types together.
- polyesters and / or polyamides are preferable, and specific examples include polyesters such as polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, and polybutylene naphthalate, and polyamides such as nylon 6 and nylon 12.
- “Toraycon (trade name)” manufactured by Toray Industries, Inc. is exemplified as polybutylene terephthalate. This polybutylene terephthalate can be used alone as the base layer 21.
- the base layer 21 includes a plasticizer and a softening agent (mineral oil, etc.), a filler (carbonate, sulfate, titanate, silicate, oxide (titanium oxide, magnesium oxide), Silica, talc, mica, clay, fiber filler, etc.), antioxidants, light stabilizers, antistatic agents, lubricants, colorants, and other various additives. These may use only 1 type and may use 2 or more types together.
- a plasticizer and a softening agent mineral oil, etc.
- a filler carbonate, sulfate, titanate, silicate, oxide (titanium oxide, magnesium oxide), Silica, talc, mica, clay, fiber filler, etc.
- antioxidants light stabilizers
- antistatic agents lubricants, colorants, and other various additives.
- the holding layer 22 is a layer formed of, for example, an adhesive material so that the component 50 can be held.
- the holding layer 22 may be provided on only one surface of the base layer 21 or may be provided on both surfaces of the base layer 21.
- the holding layer 22 may be provided in direct contact with the base layer 21 or may be provided via another layer.
- the adhesive strength of the holding layer 22 is not particularly limited, but when the holding layer 22 is attached to the surface of the silicon wafer and left for 60 minutes, it is peeled off from the surface of the silicon wafer.
- the adhesion to a silicon wafer measured in accordance with JIS Z0237 is preferably 0.1 to 10 N / 25 mm.
- the adhesive strength is more preferably 0.2 N / 25 mm or more and 9 N / 25 mm or less, and further preferably 0.3 N / 25 mm or more and 8 N / 25 mm or less.
- the thickness of the holding layer 22 is not particularly limited, but is preferably 1 ⁇ m or more and 40 ⁇ m or less, more preferably 2 ⁇ m or more and 35 ⁇ m or less, and particularly preferably 3 ⁇ m or more and 25 ⁇ m or less.
- the holding layer 22 is a layer for imparting a function of holding the component 50 to the holding film 20, and is a layer that does not hinder the properties of the base layer 21 from being reflected in the holding film 20. Accordingly, the holding layer 22 is usually a layer that is thinner than the base layer 21 and has a small elastic modulus as described above.
- the adhesive material only needs to have the above-described characteristics, and any material may be used. Usually, at least an adhesive main agent is included.
- the pressure sensitive adhesive include acrylic pressure sensitive adhesive, silicone pressure sensitive adhesive, rubber pressure sensitive adhesive, and the like.
- this adhesive material can contain a crosslinking agent other than an adhesive main ingredient.
- the pressure-sensitive adhesive material may be an energy ray-curable pressure-sensitive adhesive material that can be cured by energy rays, or may be an energy non-curable pressure-sensitive adhesive material that is not cured by energy rays.
- the adhesive material can be cured by reducing the adhesive force by irradiating the adhesive material with energy rays, and the component manufacturing tool 1 and the component 50 are separated from each other. At this time, adhesive residue on the component 50 can be prevented.
- the type of energy beam is not limited, and ultraviolet rays, electron beams, infrared rays, and the like can be used.
- the pressure sensitive adhesive material initiates polymerization of a curable compound in response to energy rays and a compound having a carbon-carbon double bond in the molecule in addition to the above-mentioned pressure sensitive adhesive.
- the photoinitiator which can be comprised can be included.
- the curable compound is preferably a monomer, oligomer and / or polymer having a carbon-carbon double bond in the molecule and curable by radical polymerization.
- the holding film 20 may be composed of only the base layer 21 and the holding layer 22 but may include other layers.
- an uneven absorption layer capable of absorbing the uneven shape of the pasting surface and smoothing the film surface
- an interface strength improving layer for improving the interface strength with the adhesive
- a low molecular weight component from the base layer 21 to the adhesive surface examples include a transition prevention layer that suppresses migration, and an antistatic layer that reduces the electrical resistance of the surface. These may use only 1 type and may use 2 or more types together.
- the holding film 20 may be produced by any method, and the method is not particularly limited. Specifically, it can be produced by a method such as a coextrusion method, an extrusion laminating method, an adhesive laminating method, or a coating method.
- the coextrusion method is a method of manufacturing the holding film 20 by laminating the molten resin to be the base layer 21 and the molten resin to be the holding layer 22 by coextrusion.
- the extrusion laminating method is a method of manufacturing the holding film 20 by laminating a molten resin or the like to be the holding layer 22 on the base layer 21 by extrusion.
- the coating method is a method of manufacturing the holding film 20 by laminating a molten resin or the like to be the holding layer 22 on the base layer 21 by coating or coating.
- an energy ray curable adhesive material is used as the adhesive material constituting the holding layer 22, it is preferable to use this coating method.
- the adhesive laminating method is a method of manufacturing the holding film 20 by laminating the base layer 21 and the holding layer 22 through thermocompression bonding, an adhesive, hot melt, or the like. These methods may use only 1 type and may use 2 or more types together.
- This method for manufacturing parts includes a semiconductor component (51), a semiconductor component precursor (52), and an electronic component on the holding layer (22) of the component manufacturing tool (1) of the present invention described above. (54) and a component holding step (R2) for holding a plurality of components (50) selected from the electronic component precursor (55) (see FIGS. 5 and 6); It is characterized by comprising an adsorption step (R3) (see FIG. 7) for adsorbing and fixing the holding film (20) holding the component (50) on the surface of the heated chuck table.
- the evaluation process (R4) (refer FIG. 8) which evaluates the components (50) hold
- the component holding step R ⁇ b> 2 is a step of holding a plurality of components 50 on the holding layer 22 of the component manufacturing tool 1.
- the holding method at this time is not particularly limited.
- the parts may be held by sticking the back surfaces of a plurality of separated parts 50 to the holding layer 22 of the holding film 20, respectively.
- an area which is a part of the precursor holding film 25 and holds the component 50 is divided into the frame body 10. This can be done by using
- the semiconductor wafer 53 and the array-shaped electronic component 56 held in advance on the film 25 (precursor holding film) stretched on the ring frame 70 are separated into pieces to obtain the component 50.
- the component 50 can be obtained by performing the singulation process R1 (see FIG. 4). Thereafter, for example, in a state where the component 50 is held on the precursor holding film 25, the second frame 12 is disposed on the front surface side of the precursor holding film 25, and the first frame 11 is brought into contact with the back surface of the precursor holding film 25, While raising the first frame 11, the precursor holding film 25 is stretched to separate the parts 50 on the precursor holding film 25 and to engage the first frame 11 and the second frame 12.
- the first frame 11 and the second frame 12 are engaged to form the frame body 10, and the precursor holding film 25 stretched on the frame body 10 in a state of being stretched to cover the opening 10 h. Is obtained (see FIG. 5).
- the precursor holding film 25 is cut small in the vicinity of the frame body 10 by using the cutting blade 91, so that the holding film 20 covering the frame body 10 and its opening 10 h and stretched on the frame body 10 Is obtained (see FIG. 6).
- maintenance film 20 will be obtained.
- the component 50 can be obtained by dividing the semiconductor wafer 53 and the arrayed electronic component 56 held in advance on the film 25 (precursor holding film) stretched on the ring frame 70 (through the individualization step R1). Yes (see FIG. 4). Thereafter, the frame body 10 is attached to the precursor holding film 25 at the part where the separated parts 50 are held (frame body engagement step R2-1) (see FIG. 5). By cutting out only the held holding film 20 (film cutting step R2-2) (see FIG. 6), the component holding step R2 can be performed. Accordingly, the component holding step R2 can include a frame engaging step R2-1 and a film cutting step R2-2.
- the precursor holding film 25 holding the separated parts 50 is engaged with the first frame 11 and the second frame 12 sandwiched from the front and back, and the frame body is engaged. 10 (see FIG. 5).
- the film cutting step R2-2 is a step of cutting out only the holding film 20 held by the frame body 10 (see FIG. 6).
- the component 50 is a component selected from the semiconductor component 51, the semiconductor component precursor 52, the electronic component 54, and the electronic component precursor 55. These parts are all parts after being singulated, and include, for example, parts in which the semiconductor wafer 53 and the arrayed electronic parts 56 are singulated. That is, the semiconductor component precursor 52 separated from the semiconductor wafer 53 and the semiconductor component 51 in which the semiconductor component precursor 52 has undergone a predetermined process (e.g., an evaluation process) are included. Similarly, an electronic component precursor 55 singulated from the array-shaped electronic component 56 and an electronic component 54 in which the electronic component precursor 55 has undergone a predetermined process (for example, an evaluation process) are included.
- a predetermined process e.g., an evaluation process
- the substrate constituting these components is not particularly limited, and silicon, sapphire, germanium, germanium-arsenic, gallium-phosphorus, gallium-arsenic-aluminum Etc.
- a circuit is formed in the semiconductor component 51 or the semiconductor component precursor 52 with respect to the above-described substrate. Examples of the circuit include a wiring, a capacitor, a diode, and a transistor. These may use only 1 type and may use 2 or more types together.
- the array-shaped electronic component 56 is a component in which precursors 55 of electronic components are integrated in an array.
- the array-shaped electronic component 56 includes the following forms (1) to (3). (1): An array obtained by arranging semiconductor components 51 (chips, dies) obtained from a semiconductor wafer 53 on which a circuit is formed on a lead frame, wire bonding, and sealing with a sealant. Electronic component 56; (2): After semiconductor components 51 (chips and dies) obtained from the semiconductor wafer 53 on which the circuit is formed are spaced apart and sealed with a sealant, they are electrically connected to the outside such as a rewiring layer and bump electrodes. An array-shaped electronic component 56 in which external circuits for obtaining the above are formed collectively.
- the array-shaped electronic component 56 obtained in the fan-out method (eWLB method).
- the semiconductor wafer 53 in this mode (3) is in a state before being singulated, and the semiconductor component 51 (chip, die) is formed in an array, or the semiconductor wafer 53 is used as a base (non-circuit silicon).
- a form in which a chip having a circuit is bonded to a substrate and used). That is, the array-shaped electronic component 56 in the form (3) is an array-shaped electronic component 56 obtained in the wafer level chip size package (WLCSP) system.
- WLCSP wafer level chip size package
- the singulation When the singulation is the singulation of the semiconductor wafer 53, the singulation may be performed so that at least one semiconductor circuit region is included in one precursor 52, and two or more semiconductor circuit regions may be included. It may be singulated to be included. Similarly, when the singulation is singulation of the arrayed electronic component 56, the singulation may be performed so that at least one semiconductor component is included in one precursor 55. It may be separated into pieces so as to include semiconductor components.
- the adsorption step R3 is a step in which the holding film 20 holding the component 50 is adsorbed and fixed to the heated surface 61 of the chuck table 60 (see FIG. 7).
- the adsorption step R3 is a step in which the holding film 20 holding the component 50 is adsorbed and fixed to the heated surface 61 of the chuck table 60 (see FIG. 7).
- the chuck table 60 normally includes a table (top plate) having a smooth top surface (surface 61).
- the smoothness naturally means smoothness on the top surface excluding a suction route such as a suction hole or a suction groove.
- the heated chuck table 60 means a state in which the chuck table 60 is set to a temperature higher than the operating environment. Specifically, for the evaluation process R4 after the adsorption process R3, the chuck table 60 is used to increase the situation in which the component manufacturing tool 1 is adsorbed to the preheated chuck table 60 and the time cycle of the evaluation process R4. It is assumed that the component manufacturing tool 1 that continuously holds the next lot is adsorbed without sufficiently cooling and cooling 60.
- the surface 61 is attracted to the chuck table 60 having a temperature of 70 ° C. or higher.
- the temperature of the surface 61 is usually 200 ° C. or lower, further 75 ° C. or higher and 190 ° C. or lower, 80 ° C. or higher and 180 ° C. or lower, and 85 ° C. or higher and 170 ° C. or lower.
- the temperature can be set to 90 ° C. or higher and 160 ° C. or lower. That is, the above-described component manufacturing tool 1 can cope with the chuck table 60 in such a temperature range.
- the singulation process R1 is as described above. That is, the singulation step R1 (see FIG. 4) is a step performed before the component holding step R2, and is a step for obtaining the component 50 by dividing the semiconductor wafer 53 and the arrayed electronic component 56 into individual pieces.
- the component 50 can be obtained by separating the semiconductor wafer 53 and the arrayed electronic component 56 held in advance on the film 25 (precursor holding film) stretched on the ring frame 70.
- the shape of the ring frame 70 is not particularly limited, but usually has a larger opening 70 h than the opening 10 h of the frame 10.
- evaluation process R4 is a process of evaluating the components 50 hold
- the evaluation method is not particularly limited, for example, in a state where the component 50 is held on the holding film 20, the electrical characteristics of the circuit of the component 50 are desired in a predetermined temperature range (for example, 100 ° C. or higher or 170 ° C. or lower). Whether or not the characteristics can be exhibited can be performed using a prober.
- This evaluation can include those intended for operation confirmation in a desired temperature range and those intended for an accelerated durability test in a desired temperature range (for example, a burn-in test).
- a probe card 80 in which a plurality of probes 81 are formed is brought into contact with a predetermined corresponding portion of the component 50 to make an electrical connection, and a circuit formed on the probe 81 and each component 50. (Probe test) can be determined (see FIG. 8).
- non-contact optical evaluation is mentioned other than the electrical evaluation (probe test) performed by making a probe contact as mentioned above.
- the evaluation process R4 may be a process of evaluating all the parts 50 or a process of evaluating only a part of the parts 50.
- the pick-up step R5 (see FIG. 9), after the evaluation step R4, only a part 50 ′ of the components 50 is pushed from the base layer 21 side toward the holding layer 22 side, and the holding film 20 is further pushed.
- This is a step of picking up and separating from other components 50 by stretching. Since the flexibility of the holding film 20 used in the component manufacturing tool 1 can be maintained through each process, it can have high pickup properties. Specifically, in the pick-up process, only the film at the site where the pick-up target part is attached can be deformed. That is, the area of the peripheral film that is lifted following the push-up by the push-up member 92 can be kept small, and the diameter L (see FIG. 9) of the circular portion lifted by the push-up can be shortened.
- the pick-up component 50 is pushed up by the push-up member 92 from the base layer 21 side of the holding film 20, and the pushed-up component 50 is taken up.
- a pickup device 93 can be used for pickup by a method such as adsorption.
- the value at ⁇ 40 ° C. is the tensile elastic modulus E ′ ( ⁇ 40), the value at 25 ° C. is the tensile elastic modulus E ′ (25), the value at 100 ° C. is the tensile elastic modulus E ′ (100), and 160
- the values at ° C. are shown in Table 1 as the tensile elastic modulus E ′ (160).
- Base Layer As the base layer 21, a polyester thermoplastic elastomer (TPEE) film having a thickness of 80 ⁇ m was prepared. Using this film, the tensile modulus E ′ was measured and the ratio R E1 and the ratio R E2 were calculated in the same manner as in Experimental Example 1, and the results are shown in Table 1. As a result, the ratio R E1 in Experimental Example 3 was 0.4, and the ratio R E2 was 0.03.
- Retaining Layer A non-curable acrylic pressure-sensitive adhesive having a thickness of 10 ⁇ m was used as the retaining layer 22.
- Lamination of Base Layer and Retaining Layer The retaining layer 22 of the above (2) was laminated on one surface of the base layer 21 of the above (1) to obtain a retaining film 20 of Experimental Example 3.
- ⁇ Experimental example 4> (1) Base Layer As the base layer 21, a polyester thermoplastic elastomer (TPEE) film having a thickness of 150 ⁇ m was prepared. This film is different from the film of Experimental Example 3 only in thickness. (2) Retaining Layer A non-curable acrylic pressure-sensitive adhesive having a thickness of 10 ⁇ m was used as the retaining layer 22. (3) Lamination of base layer and holding layer The holding layer 22 of the above (2) was laminated on one surface of the base layer 21 of the above (1) to obtain a holding film 20 of Experimental Example 4.
- TPEE polyester thermoplastic elastomer
- Base Layer As the base layer 21, a polyester thermoplastic elastomer (TPEE) film having a thickness of 120 ⁇ m was prepared. Using this film, the tensile modulus E ′ was measured and the ratio R E1 and the ratio R E2 were calculated in the same manner as in Experimental Example 1, and the results are shown in Table 1. As a result, the ratio R E1 in Experimental Example 5 was 0.6, and the ratio R E2 was 0.02.
- Retaining Layer A non-curable acrylic pressure-sensitive adhesive having a thickness of 10 ⁇ m was used as the retaining layer 22.
- Lamination of Base Layer and Retaining Layer The retaining layer 22 of the above (2) was laminated on one surface of the base layer 21 of the above (1) to obtain a retaining film 20 of Experimental Example 5.
- Each holding film 20 of Experimental Example 1-5 is composed of a first frame 11 having an outer diameter of 179 mm and an inner diameter (a diameter of 169 mm of the opening portion 11h), an outer diameter of 182 mm and an inner diameter (an opening portion of 12h).
- Each of the holding films of Experimental Examples 1 to 5 is extended so as to be evenly expanded by 2 mm from the no-load state to the surroundings (with the first frame 11 and 179 mm).
- the component manufacturing tool of Experimental Examples 1 to 5 was obtained by holding and tensioning the second frame 12.
- the component manufacturing tool and the component manufacturing method of the present invention are widely used in applications of semiconductor component manufacturing and electronic component manufacturing.
- a method for manufacturing a part including an evaluation process with heating, a singulation process, and a pick-up process it is preferably used from the viewpoint of manufacturing a part with excellent productivity.
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Abstract
Description
しかしながら、特許文献2では、このような操作を可能とするフィルムが具体的に開示されていない。また、特許文献2では、評価工程が想定されていない。一般に、評価工程は、加温環境下での作動確認や、熱ストレス負荷を用いた加速評価等の熱付加を利用した評価が含まれる。そのため、キャリアには、個片化及びピックアップで必要とされる機械的強度及び柔軟性に加え、耐熱性や、熱耐久後の機械的強度及び柔軟性までもが要求されるが、これらの点については何ら検討がなされていない。
しかしながら、特許文献1では、下記の吸着不良に対する対処方法については検討されていない。
[1]に記載の部品製造用具は、半導体部品の製造方法又は電子部品の製造方法に用いられる部品製造用具であって、
開口部を有する枠体と、前記開口部を覆って前記枠体に張られた保持フィルムと、を有し、
前記枠体は、リング状の第1枠と、前記第1枠と係合可能なリング状の第2枠と、を備え、
前記保持フィルムは、基層と、前記基層の一面側に設けられた保持層と、を備えるとともに、伸張した状態で前記第1枠と前記第2枠との間に挟まれて保持されており、
前記基層は、100℃における弾性率E’(100)と、25℃における弾性率E’(25)と、の比RE1(=E’(100)/E’(25))が0.2≦RE1≦1であり、且つ、E’(25)が35MPa以上3500MPa以下であることを要旨とする。
[2]に記載の部品製造用具は、[1]に記載の部品製造用具において、前記基層の線熱膨張係数が100ppm/K以上であることを要旨とする。
[3]に記載の部品製造用具は、請求項1又は2に記載の部品製造用具において、前記基層は、熱可塑性ポリエステル系エラストマー、熱可塑性ポリアミド系エラストマー、及び、ポリブチレンテレフタレートのうちの少なくとも1種を含むことを要旨とする。
[4]に記載の部品製造用具は、[1]乃至[3]のうちのいずれかに記載の部品製造用具において、前記製造方法は、半導体部品、前記半導体部品の前駆体、電子部品、及び、前記電子部品の前駆体から選ばれた複数個の部品が、前記保持層に保持された状態にある前記保持フィルムを、加熱されたチャックテーブルの表面に吸着して固定する吸着工程を備えることを要旨とする。
[5]に記載の部品製造用具は、[4]に記載の部品製造用具において、前記吸着工程後に、前記保持フィルムに保持された前記部品を評価する評価工程を備えることを要旨とする。
[6]に記載の部品製造用具は、[5]に記載の部品製造用具において、前記評価工程後に、前記部品のうちの一部の部品のみを、前記基層側から前記保持層側へ向かって突き押して、前記保持フィルムを更に伸張させることによって、他の部品から離間させてピックアップするピックアップ工程を備えることを要旨とする。
[7]に記載の部品製造方法は、開口部を有する枠体と、前記開口部を覆って前記枠体に張られた保持フィルムと、を有し、
前記枠体は、リング状の第1枠と、前記第1枠と係合可能なリング状の第2枠と、を備え、
前記保持フィルムは、基層と、前記基層の一面側に設けられた保持層と、を備えるとともに、伸張した状態で前記第1枠と前記第2枠との間に挟まれて保持されており、
前記基層は、100℃における弾性率E’(100)と、25℃における弾性率E’(25)と、の比RE1(=E’(100)/E’(25))が0.2≦RE1≦1であり、且つ、E’(25)が35MPa以上3500MPa以下である部品製造用具の前記保持層に、半導体部品、前記半導体部品の前駆体、電子部品、及び、前記電子部品の前駆体から選ばれた複数個の部品を保持する部品保持工程と、
前記部品が保持された前記保持フィルムを、加熱されたチャックテーブルの表面に吸着して固定する吸着工程を備えることを要旨とする。
[8]に記載の部品製造方法は、[7]に記載の部品の製造方法において、前記吸着工程後に、前記保持フィルムに保持された前記部品を評価する評価工程を備えることを要旨とする。
[9]に記載の部品製造方法は、[8]に記載の部品の製造方法において、前記評価工程後に、前記部品のうちの一部の部品のみを、前記基層側から前記保持層側へ向かって突き押して、前記保持フィルムを更に伸張させることによって、他の部品から離間させてピックアップするピックアップ工程を備えることを要旨とする。
本部品製造用具(1)は、部品(50)の製造方法に用いられる部品製造用具(1)である。部品(50)には、半導体部品(51)及び電子部品(54)が含まれる。
本部品製造用具(1)は、開口部(10h)を有する枠体(10)と、開口部(10h)を覆って枠体(10)に張られた保持フィルム(20)と、を有する。
このうち、枠体(10)は、リング状の第1枠(11)と、第1枠(11)と係合可能なリング状の第2枠(12)と、を備えている。一方、保持フィルム(20)は、伸張された状態で、第1枠(11)と第2枠(12)との間に挟まれて保持されている。
そして、保持フィルム(20)は、基層(21)と、基層(21)の一面(21a)側に設けられた保持層(22)と、を備えている。このうち、基層(21)は、100℃における弾性率E’(100)と、25℃における弾性率E’(25)と、の比RE1(=E’(100)/E’(25))が0.2≦RE1≦1、且つ、E’(25)が35MPa以上3500MPa以下である(図1参照)。
尚、本部品製造用具1の利用形態及び流通形態は特に限定されないものの、通常、利用時には、保持フィルム20上に部品50が載置された状態となる。
枠体10(図2参照)は、第1枠11と第2枠12と、を備える。第1枠11はリング状をなし、開口部11hを有する。同様に、第2枠12はリング状をなし、開口部12hを有する。第1枠11と第2枠12とは係合可能であり、第1枠11と第2枠12とを係合することで、第1枠11と第2枠12とが一体となって枠体10をなす。また、第1枠11と第2枠12とを係合することで、開口部11hと開口部12hとが一体となって開口部10hをなす。第1枠11及び第2枠12の各構成材料が限定されず、各種の有機材料(樹脂、エラストマなど)及び無機材料(金属、セラミックスなど)を適宜必要に応じて利用できる。このうち、有機材料としては、例えば、ポリカーボネート樹脂、ABS樹脂、ポリエステル樹脂(芳香族ポリエステル樹脂、液晶性ポリエステル樹脂等)、ポリアミド樹脂(芳香族ポリアミド樹脂等)、ポリイミド樹脂、ポリアミドイミド樹脂等が挙げられる。これらは1種のみを用いてもよく2種以上を併用してもよい。これらの有機材料に対しては、更に、無機材料フィラー、無機材料補強(繊維ガラス繊維、炭素繊維等)、有機材料フィラー、有機材料補強繊維(芳香族ポリアミド樹脂繊維等)などの補強材を配合できる。当然ながら、補強材についても1種のみを用いてもよく2種以上を併用してもよい。
更に、図1(a)及び図1(c)に示すように、第1枠11は、その一部の外径が、第2枠12の内径よりも小さくなるように切り欠かれた形状を有することができる。この形状では、係合時及び係合後に、第2枠12が、第1枠11の嵌め込み側とは反対側へ抜け落ちることを防止できる。
また、係合は、第1枠11と第2枠12との係合クリアランスの調整のみで可能とされてもよいが、例えば、磁力の利用等により、係合状態を維持することもできる。
保持フィルム20は、伸張された状態で、第1枠11と第2枠12との間に挟まれて保持されたフィルムである。この保持フィルム20は、基層21と、その一面21a側に設けられた保持層22と、を備える(図1、図3及び図6参照)。そして、このうち、基層21は、100℃における弾性率E’(100)と、25℃における弾性率E’(25)と、の比RE1(=E’(100)/E’(25))が0.2≦RE1≦1、且つ、E’(25)が35MPa以上3500MPa以下である。
尚、上記「E’(100)」は、基層21の100℃における引張弾性率を表わし、上記「E’(25)」は、基層21の25℃における引張弾性率を表わす。
また、図1及び図3における基層21及び保持層22の配置は一例である。即ち、図1及び図3は、いずれも、第1枠11の側に基層21が配置された例を示しているが、第1枠11の側に保持層22が配置されてもよい。
このように、部品製造時の評価効率を高めるには、チャックテーブルの温度が下がり切る前に、キャリアを吸着させたり、離間させたりする必要を生じるが、このような状況に対応できる部品製造用具は現在知られていない。とりわけ、予め伸張された状態で保持フィルム20が枠体10に張られた部品製造用具1を上述のような評価工程に供することは極めて困難である。この点、本部品製造用具1では、保持フィルム20に、0.2≦RE1≦1、且つ、E’(25)が35MPa以上3500MPa以下となる性質を持たせることにより、上述の通り本問題を解決して、部品製造を行うことが可能である。
前述の通り、製造部品の評価は、高温において行われる他、低温においても行われ得る。低温下では基層21の引張弾性率E’は、高温下よりも必然的に大きくなる。従って、伸長状態で枠体10に張られた保持フィルム20が、評価時の低温を経る場合であっても破断されない柔軟性を維持できることが要求される。しかしながら、高温耐熱性に優れた材料は、通常、高温引張弾性率が高い材料であり、このような材料の引張弾性率は、低温では更に高くなり、上述の状況に耐えることが困難となる。この点、基層21の比RE2が0.01≦RE2≦1であり、且つ、E’(-40)が、10MPa≦E’(-40)≦4500MPaである保持フィルム20では、上述の要求を充足することができる。
この線熱膨張係数は100ppm/K以上300ppm/K以下が好ましく、更に、130ppm/K以上280ppm/K以下が好ましく、更に、150ppm/K以上250ppm/K以下がより好ましく、更に、165ppm/K以上240ppm/K以下がより好ましい。この線熱膨張係数は、JIS K7197に準じて測定され、温度50℃から190℃までの間における熱膨張係数とする。
基層21を構成する材料としては、樹脂が好ましい。また、樹脂のなかでも、十分な柔軟性(力学的な伸縮性)を有する樹脂であることが好ましく、特にエラストマー性を有する樹脂であることが好ましい。
これらのうちでは、ポリエステル系熱可塑性エラストマー、ポリアミド系熱可塑性エラストマー、ポリイミド系熱可塑性エラストマーが好ましく、更には、ポリエステル系熱可塑性エラストマー及び/又はポリアミド系熱可塑性エラストマーが特に好ましい。
より具体的には、PBT-PE-PBT型ポリエステル系熱可塑性エラストマー等が挙げられる。
より具体的には、ポリエーテルアミド型ポリアミド系熱可塑性エラストマー、ポリエステルアミド型ポリアミド系熱可塑性エラストマー、ポリエーテルエステルアミド型ポリアミド系熱可塑性エラストマー等が挙げられる。
具体的には、ポリブチレンテレフタレートとして、東レ株式会社製「トレコン(商品名)」が挙げられる。このポリブチレンテレフタレートは、単独で基層21として利用可能である。
保持層22は、部品50を保持できるよう、例えば、粘着材等により形成された層である。保持層22は、基層21の一面のみに備えてもよいし、基層21の両面に備えてもよい。保持層22は、基層21と直接接して設けられていてもよく、他の層を介して設けられていてもよい。
また、保持層22の厚さ(基層21の一方の面側のみの厚さ)は特に限定されないが、1μm以上40μm以下が好ましく、2μm以上35μm以下がより好ましく、3μm以上25μm以下が特に好ましい。
尚、当然ながら、保持層22は、保持フィルム20に部品50を保持する機能を付与するための層であり、基層21の特性が、保持フィルム20に反映されることを阻害しない層である。従って、保持層22は、通常、基層21より厚さが薄く、前述した各弾性率も小さい層である。
更に、粘着材は、エネルギー線によって硬化できるエネルギー線硬化型粘着材であってもよいし、エネルギー線によって硬化されないエネルギー非硬化型粘着材であってもよい。エネルギー線硬化型粘着材である場合、粘着材に対しエネルギー線照射を行うことで、粘着材を硬化させ、その粘着力を低下させることができ、本部品製造用具1と部品50とを離間させる際に、部品50に対する糊残りを防止できる。エネルギー線の種類は限定されず、紫外線、電子線、赤外線等を利用できる。
エネルギー線硬化型粘着材である場合、粘着材は、上述の粘着主剤以外に、分子内に炭素-炭素二重結合を有する化合物と、エネルギー線に反応して硬化性化合物の重合を開始させることができる光重合開始剤を含むことができる。この硬化性化合物は、分子中に炭素-炭素二重結合を有し、ラジカル重合により硬化可能なモノマー、オリゴマー及び/又はポリマーが好ましい。
保持フィルム20は、基層21及び保持層22のみからなってもよいが、他層を備えることができる。他層としては、貼り付け面の凹凸形状を吸収してフィルム面を平滑にできる凹凸吸収層、粘着材との界面強度を向上する界面強度向上層、基層21から粘着面への低分子量成分の移行を抑制する移行防止層、表面の電気抵抗を低減する帯電防止層等が挙げられる。これらは1種のみを用いてもよく2種以上を併用してもよい。
保持フィルム20は、どのような方法で製造してもよく、その方法は特に限定されない。具体的には、共押出し法、押出ラミネート法、接着ラミネート法、塗布法等の方法により製造できる。このうち、共押出し法は、基層21となる溶融樹脂と保持層22となる溶融樹脂等とを共押出しによって積層して、保持フィルム20を製造する方法である。
本部品の製造方法は、前述の本発明の部品製造用具(1)の保持層(22)に、半導体部品(51)、半導体部品の前駆体(52)、電子部品(54)、及び、電子部品の前駆体(55)から選ばれた複数個の部品(50)を保持する部品保持工程(R2)(図5及び図6参照)と、
部品(50)が保持された保持フィルム(20)を、加熱されたチャックテーブルの表面に吸着して固定する吸着工程(R3)(図7参照)を備えることを特徴とする。
更に、本方法では、評価工程(R4)後に、部品(50)のうちの一部の部品(50’)のみを、基層(21)側から保持層(22)側へ向かって突き押して、保持フィルム(20)を更に伸張させることによって、他の部品(50)から離間させてピックアップするピックアップ工程(R5)(図9参照)を備えることができる。
部品保持工程R2は、部品製造用具1の保持層22に複数個の部品50を保持する工程である。
この際の保持方法は特に限定されず、個片化された複数の部品50の裏面を保持フィルム20の保持層22に各々貼着して、部品保持を行ってもよいが、図5~図6に示すように、部品50が保持されたフィルム25(前駆保持フィルム)が張られたリングフレーム70から、前駆保持フィルム25の一部であって部品50が保持された領域を、枠体10を利用して切り取ることによって行うことができる。
その後、例えば、前駆保持フィルム25に部品50を保持した状態で、前駆保持フィルム25の表面側に第2枠12を配置し、前駆保持フィルム25の裏面に第1枠11を当接させて、第1枠11を上昇させながら、前駆保持フィルム25を伸張させて、前駆保持フィルム25上において部品50同士を離間させるとともに、第1枠11と第2枠12とを係合させる。これにより、第1枠11と第2枠12とは係合されて枠体10が形成されるとともに、開口部10hを覆って伸張された状態で、枠体10に張られた前駆保持フィルム25が得られる(図5参照)。その後、カット刃91を利用して、枠体10の近傍で、前駆保持フィルム25を小さくカットすることにより、枠体10とその開口部10hを覆って枠体10に張られた保持フィルム20とが得られる(図6参照)。これにより、得られた保持フィルム20上に、個片化された部品50同士が接触されないように、互いに離間された状態で保持された状態が得られることになる。
従って、部品保持工程R2は、枠体係合工程R2-1及びフィルムカット工程R2-2を含むことができる。枠体係合工程R2-1は、個片化された部品50が保持された前駆保持フィルム25を、その表裏から第1枠11と第2枠12とで挟みながら係合して、枠体10を完成させる工程(図5参照)である。また、フィルムカット工程R2-2は、枠体10に保持された保持フィルム20のみを切り出す工程である(図6参照)。
(1):回路形成された半導体ウエハ53から得られた半導体部品51(チップ、ダイ)を、リードフレーム上に配列し、ワイヤーボンディングした後、封止剤で封止して得られたアレイ状電子部品56。
(2):回路形成された半導体ウエハ53から得られた半導体部品51(チップ、ダイ)を、離間配列し、封止剤で封止した後、再配線層及びバンプ電極等の外部との導通を得る外部回路を一括して形成したアレイ状電子部品56。即ち、ファンアウト方式(eWLB方式)において得られるアレイ状電子部品56である。
(3):半導体ウエハ53をウエハ状態のまま利用し、再配線層及びバンプ電極等の外部との導通を得る外部回路や、封止剤で封止した封止層を一括して形成したアレイ状電子部品56。この形態(3)における半導体ウエハ53は、個片化前状態であって、半導体部品51(チップ、ダイ)がアレイ状に形成された形態や、半導体ウエハ53を基体として利用する(非回路シリコン基板上に回路を有するチップを接合して利用する形態)等を含むものである。即ち、形態(3)におけるアレイ状電子部品56は、ウエハレベルチップサイズパッケージ(WLCSP)方式において得られるアレイ状電子部品56である。
吸着工程R3は、部品50が保持された保持フィルム20を、加熱されたチャックテーブル60の表面61に吸着して固定する工程である(図7参照)。
前述のように、従来の部品製造用具では、加熱されたチャックテーブル60に部品製造用具を吸着・固定しようとすると、保持された部品50の外周部分の保持フィルム20’に、皺Xを生じ、この皺Xより吸引漏れを起こし、部品製造用具をチャックテーブル60へ正常に吸着固定できない場合があった。これに対し、本部品製造用具1を利用することにより、皺Xの発生を抑えで、部品製造用具1をチャックテーブル60の表面61に対して正常に吸着固定できるようになる(図7参照)。
また、加熱されたチャックテーブル60とは、チャックテーブル60が操作環境よりも高い温度にされた状態を意味する。具体的には、吸着工程R3後の評価工程R4のために、予熱された状態のチャックテーブル60に部品製造用具1を吸着させる状況や、評価工程R4のタイムサイクルを大きくするために、チャックテーブル60の放冷や冷却を十分に行うことなく、連続的に次ロットを保持した部品製造用具1を吸着させる状況等が想定される。とりわけ、本方法では、表面61の温度が70℃以上であるチャックテーブル60に吸着させる場合が想定される。この表面61の温度は、通常、200℃以下であり、更には75℃以上190℃以下とすることができ、更には80℃以上180℃以下とすることができ、更には85℃以上170℃以下とすることができ、更には90℃以上160℃以下とすることができる。即ち、このような温度範囲のチャックテーブル60に対して、前述した本部品製造用具1は対応することができる。
即ち、個片化工程R1(図4参照)は、部品保持工程R2前に行われる工程であり、半導体ウエハ53やアレイ状電子部品56を個片化して部品50を得る工程である。例えば、リングフレーム70に張られたフィルム25(前駆保持フィルム)に予め保持された半導体ウエハ53やアレイ状電子部品56を個片化して部品50を得ることができる。
尚、このリングフレーム70の形状は特に限定されないが、通常、枠体10の開口部10hよりも、大きな開口部70hを有している。
具体的には、例えば、複数のプローブ81が形成されたプローブカード80を、部品50の所定の対応する箇所へ接触させて電気的接続を行い、プローブ81と各部品50上に形成された回路との間でやり取りされる信号の正否判定を行う(プローブテスト)ことができる(図8参照)。尚、評価としては、上述のように、プローブを接触させて行う電気的な評価(プローブテスト)以外に、非接触の光学式の評価が挙げられる。また、保持フィルム20に保持された部品50が複数個ある場合、評価工程R4において評価される部品50の個数は限定されない。即ち、評価工程R4は、全ての部品50を評価する工程であってもよいし、一部の部品50のみを評価する工程であってもよい。
本部品製造用具1に利用される保持フィルム20の柔軟性は、各工程を通して維持できるため、高いピックアップ性を有することができる。具体的には、ピックアップ工程において、ピックアップ対象部品が貼着された部位のフィルムだけを変形させることができる。即ち、突上げ部材92で突き上げた際に追従して持ち上がる周辺フィルムの面積を小さく抑え、突き上げに伴って持ち上がる円形部の直径L(図9参照)を短くできる。これにより、意図せず非ピックアップ対象の部品が持ち上がる等の不具合を防止できる。十分な柔軟性を維持できないフィルムでは、突き上げに伴って意図せず持ち上がる周辺フィルムの面積が大きいため、ピックアップ対象の部品に隣合った他の部品(非ピックアップ対象部品)が同時に持ち上がったり、傾いて持ち上がったりすることで、部品同士が衝突する等の不具合を生じることが危惧される。この点、本方法では、前述した本部品製造用具1を利用するため、このような不具合を防止できる。
ピックアップ工程は、公知の方法を用いて適宜行うことができるが、例えば、保持フィルム20の基層21の側から突上げ部材92によって、ピックアップ対象である部品50を突き上げ、この突き上げられた部品50をピックアップ器具93によって吸着等の方法によりピックアップすることができる。
[1]部品製造用具の製造
〈1〉保持フィルム20の製造
〈実験例1〉
(1)基層
基層21として、厚さ75μmのポリブチレンテレフタレート(PBT)フィルムを用意した。このフィルムを用い、引張弾性率E’を、動的粘弾性測定装置(DMA:Dynamic Mechanical Analysis)(製品名:RSA-3、TAインスツルメント社製)により測定した。具体的には、サンプルサイズを幅10mm、チャック間の長さ20mmとし、周波数1Hz、昇温速度5℃/分の測定条件で-50℃から200℃まで測定して得られたデータから各温度のデータを読み取った。そして、-40℃における値を引張弾性率E’(-40)とし、25℃における値を引張弾性率E’(25)とし、100℃における値を引張弾性率E’(100)とし、160℃における値を引張弾性率E’(160)として、表1に示した。更に、これらの値を用いて、比RE1(=E’(100)/E’(25))の値、及び、比RE2(=E’(160)/E’(-40))の値、を算出し、この結果を表1に併記した。その結果、実験例1における比RE1は0.25であり、比RE2は0.06であった。
(2)保持層
保持層22として、厚さ10μmの非硬化型のアクリル系粘着剤を用いた。
(3)基層と保持層との積層
上記(1)の基層21の一面に、上記(2)の保持層22をラミネートして、実験例1の保持フィルム20を得た。
(1)基層
基層21として、厚さ150μmのナイロン系熱可塑性エラストマー(TPAE)フィルムを用意した。このフィルムを用い、実験例1と同様に、引張弾性率E’を測定するとともに、比RE1及び比RE2を算出し、この結果を表1に示した。その結果、実験例2における比RE1は0.34であり、比RE2は0.001であった。
(2)保持層
保持層22として、厚さ10μmの非硬化型のアクリル系粘着剤を用いた。
(3)基層と保持層との積層
上記(1)の基層21の一面に、上記(2)の保持層22をラミネートして、実験例2の保持フィルム20を得た。
(1)基層
基層21として、厚さ80μmのポリエステル系熱可塑性エラストマー(TPEE)フィルムを用意した。このフィルムを用い、実験例1と同様に、引張弾性率E’を測定するとともに、比RE1及び比RE2を算出し、この結果を表1に示した。その結果、実験例3における比RE1は0.4であり、比RE2は0.03であった。
(2)保持層
保持層22として、厚さ10μmの非硬化型のアクリル系粘着剤を用いた。
(3)基層と保持層との積層
上記(1)の基層21の一面に、上記(2)の保持層22をラミネートして、実験例3の保持フィルム20を得た。
(1)基層
基層21として、厚さ150μmのポリエステル系熱可塑性エラストマー(TPEE)フィルムを用意した。このフィルムは、実験例3のフィルムとは厚さのみが異なるフィルムである。
(2)保持層
保持層22として、厚さ10μmの非硬化型のアクリル系粘着剤を用いた。
(3)基層と保持層との積層
上記(1)の基層21の一面に、上記(2)の保持層22をラミネートして、実験例4の保持フィルム20を得た。
(1)基層
基層21として、厚さ120μmのポリエステル系熱可塑性エラストマー(TPEE)フィルムを用意した。このフィルムを用い、実験例1と同様に、引張弾性率E’を測定するとともに、比RE1及び比RE2を算出し、この結果を表1に示した。その結果、実験例5における比RE1は0.6であり、比RE2は0.02であった。
(2)保持層
保持層22として、厚さ10μmの非硬化型のアクリル系粘着剤を用いた。
(3)基層と保持層との積層
上記(1)の基層21の一面に、上記(2)の保持層22をラミネートして、実験例5の保持フィルム20を得た。
実験例1-5の各保持フィルム20を、外径179mm且つ内径(開口部11hの直径169mm)である第1枠11と、外径182mm且つ内径(開口部12hの直径179mm)である第2枠12と、を用い、無負荷状態から、周囲へ均等に2mm拡張されるように、実験例1~5の各保持フィルムを伸張させて(第1枠11と第2枠12とで挟んだ状態で保持)張ることにより、実験例1~5の部品製造用具を得た。
温度120℃に設定した真空吸着式のチャックテーブル60の表面61に、上記〈2〉までに得られた実験例1~5の各部品製造用具1の保持フィルム20の基層21表面を吸着固定した。この際の吸着固定の状態を以下の基準で評価し、その結果を表1に示した。
「○」・・・良好に吸着固定できた。
「△」・・・吸着固定できたものの、僅かな皺が認められた。
「×」・・・保持フィルムが波を打って吸着固定できなかった。
実験例1~5の基層21のE’(100)とE’(25)との比RE1(=E’(100)/E’(25))は、いずれも0.2≦RE1≦1の範囲に含まれる。加えて、実験例1~5の基層21のE’(25)は、いずれも35MPa以上3500MPa以下の範囲に含まれる。このような基層21を用いた部品製造用具により、高温の真空吸着式のチャックテーブルへ正常に吸着させることができ、熱皺も全く認められない。この結果、加熱環境でもチャックテーブルに吸着できる部品製造用具及び部品製造方法を提供できる。
10;枠体、10h;開口部、
11;第1枠、11h;開口部、
12;第2枠、12h;開口部、
20;保持フィルム、21;基層、22;保持層、
50;部品、
51;半導体部品、52;半導体部品の前駆体(個片化後の前駆体)、53;半導体ウエハ(個片化前の前駆体)、
54;電子部品、55;電子部品の前駆体(個片化後の前駆体)、56;アレイ状電子部品(個片化前の前駆体)、
60;チャックテーブル、61;表面(チャックテーブルの吸着可能な表面)、
70;リングフレーム、71;リングフレームの開口部、
80;プローブカード、81;プローブ、
91;カット刃、92;突上げ部材、93;ピックアップ器具、
R1;個片化工程、
R2;部品保持工程、R2-1;枠体係合工程、R2-2;フィルムカット工程、
R3;吸着工程、
R4;評価工程、
R5;ピックアップ工程。
Claims (9)
- 半導体部品の製造方法又は電子部品の製造方法に用いられる部品製造用具であって、
開口部を有する枠体と、前記開口部を覆って前記枠体に張られた保持フィルムと、を有し、
前記枠体は、リング状の第1枠と、前記第1枠と係合可能なリング状の第2枠と、を備え、
前記保持フィルムは、基層と、前記基層の一面側に設けられた保持層と、を備えるとともに、伸張した状態で前記第1枠と前記第2枠との間に挟まれて保持されており、
前記基層は、100℃における弾性率E’(100)と、25℃における弾性率E’(25)と、の比RE1(=E’(100)/E’(25))が0.2≦RE1≦1であり、且つ、E’(25)が35MPa以上3500MPa以下であることを特徴とする部品製造用具。 - 前記基層の線熱膨張係数が100ppm/K以上である請求項1に記載の部品製造用具。
- 前記基層は、熱可塑性ポリエステル系エラストマー、熱可塑性ポリアミド系エラストマー、及び、ポリブチレンテレフタレートのうちの少なくとも1種を含む請求項1又は2に記載の部品製造用具。
- 前記製造方法は、半導体部品、前記半導体部品の前駆体、電子部品、及び、前記電子部品の前駆体から選ばれた複数個の部品が、前記保持層に保持された状態にある前記保持フィルムを、加熱されたチャックテーブルの表面に吸着して固定する吸着工程を備える請求項1乃至3のうちのいずれかに記載の部品製造用具。
- 前記吸着工程後に、前記保持フィルムに保持された前記部品を評価する評価工程を備える請求項4に記載の部品製造用具。
- 前記評価工程後に、前記部品のうちの一部の部品のみを、前記基層側から前記保持層側へ向かって突き押して、前記保持フィルムを更に伸張させることによって、他の部品から離間させてピックアップするピックアップ工程を備える請求項5に記載の部品製造用具。
- 開口部を有する枠体と、前記開口部を覆って前記枠体に張られた保持フィルムと、を有し、
前記枠体は、リング状の第1枠と、前記第1枠と係合可能なリング状の第2枠と、を備え、
前記保持フィルムは、基層と、前記基層の一面側に設けられた保持層と、を備えるとともに、伸張した状態で前記第1枠と前記第2枠との間に挟まれて保持されており、
前記基層は、100℃における弾性率E’(100)と、25℃における弾性率E’(25)と、の比RE1(=E’(100)/E’(25))が0.2≦RE1≦1であり、且つ、E’(25)が35MPa以上3500MPa以下である部品製造用具の前記保持層に、半導体部品、前記半導体部品の前駆体、電子部品、及び、前記電子部品の前駆体から選ばれた複数個の部品を保持する部品保持工程と、
前記部品が保持された前記保持フィルムを、加熱されたチャックテーブルの表面に吸着して固定する吸着工程を備えることを特徴とする部品製造方法。 - 前記吸着工程後に、前記保持フィルムに保持された前記部品を評価する評価工程を備える請求項7に記載の部品製造方法。
- 前記評価工程後に、前記部品のうちの一部の部品のみを、前記基層側から前記保持層側へ向かって突き押して、前記保持フィルムを更に伸張させることによって、他の部品から離間させてピックアップするピックアップ工程を備える請求項8に記載の部品製造方法。
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