WO2018205647A1 - 阵列基板、显示面板和显示装置 - Google Patents

阵列基板、显示面板和显示装置 Download PDF

Info

Publication number
WO2018205647A1
WO2018205647A1 PCT/CN2018/070026 CN2018070026W WO2018205647A1 WO 2018205647 A1 WO2018205647 A1 WO 2018205647A1 CN 2018070026 W CN2018070026 W CN 2018070026W WO 2018205647 A1 WO2018205647 A1 WO 2018205647A1
Authority
WO
WIPO (PCT)
Prior art keywords
pixel
pixel electrode
electrode layer
array substrate
display panel
Prior art date
Application number
PCT/CN2018/070026
Other languages
English (en)
French (fr)
Inventor
王海燕
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/068,636 priority Critical patent/US11409168B2/en
Publication of WO2018205647A1 publication Critical patent/WO2018205647A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/122—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode having a particular pattern
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to an array substrate, a display panel including the array substrate, and a display device including the display panel.
  • the liquid crystal display panel has a high PPI (pixel per inch).
  • PPI pixel per inch
  • a high-PPI TN (Twisted Nematic) type liquid crystal display panel is prone to dark light leakage
  • PPI ADS (Advanced Super Dimension Switch) liquid crystal panel is prone to color mixing.
  • an array substrate includes a plurality of pixel units arranged in a matrix, wherein each row of pixel units is composed of a plurality of first pixel units and a plurality of second pixel units disposed at intervals. Further, the array substrate further includes a first pixel electrode layer, a second pixel electrode layer, and a transparent insulating layer between the first pixel electrode layer and the second pixel electrode layer.
  • a plurality of first pixel electrodes for the plurality of first pixel units are spaced apart in the first pixel electrode layer for the plurality of second pixels
  • a plurality of second pixel electrodes of the cell are spaced apart in the second pixel electrode layer, and an orthographic projection of each of the second pixel electrodes on the first pixel electrode layer is between the adjacent two first pixel electrodes.
  • orthoprojection refers to a projection along a direction perpendicular to the extended face of the first pixel electrode layer.
  • the distance between the orthographic projection of each second pixel electrode on the first pixel electrode layer and the adjacent first pixel electrode is 0.1 micron.
  • the pitch refers to the pitch within the extended face of the first pixel electrode layer.
  • the transparent insulating layer is made of at least one of an oxide of silicon and a nitride of silicon.
  • the array substrate further includes a plurality of data lines, wherein an orthographic projection of each of the data lines on the first pixel electrode layer is sandwiched by a second pixel electrode on the first pixel electrode layer.
  • the orthographic projection is between a first pixel electrode.
  • the width of the data lines is between 0.8 microns and 1.5 microns.
  • a display panel includes the array substrate according to any of the above embodiments.
  • the display panel further includes a pair of the substrate and a color film layer disposed on the pair of the substrate.
  • the color film layer includes a plurality of filter units respectively corresponding to the plurality of pixel units, wherein each of the filter units includes a plurality of color filter blocks having different colors from each other.
  • a plurality of common electrodes are further disposed on the box substrate.
  • a display device comprising the display panel of any of the above embodiments.
  • FIG. 1 is a schematic view of a typical TN type array substrate
  • FIG. 2 is a schematic view of a typical ADS type array substrate
  • FIG. 3 is a schematic view of a display panel in accordance with an embodiment of the present disclosure.
  • FIG. 4 is a plan view illustrating a distribution of first and second pixel electrodes in a display panel according to an embodiment of the present disclosure
  • Figure 5 is a luminescence simulation diagram for the TN-type array substrate of Figure 1;
  • FIG. 6 is a light emission simulation diagram for a display device including the display panel of FIG.
  • the liquid crystal display panel includes two types: a TN (Twisted Nematic) type liquid crystal display panel and an ADS (Advanced Super Dimension Switch) type liquid crystal display panel.
  • a TN type liquid crystal display panel a pixel electrode 100 and a data line 300 are disposed on an array substrate; a common electrode 600, a black matrix 700, and a filter block (a red filter is shown in FIG.
  • the light block 820 and the green filter block 810) are disposed on the color filter substrate; and the liquid crystal layer 500 is packaged between the array substrate and the counter substrate.
  • FIG. 1 a typical TN type liquid crystal display panel
  • a pixel electrode 100 and a data line 300 are disposed on an array substrate
  • a common electrode 600, a black matrix 700, and a filter block a red filter is shown in FIG.
  • the light block 820 and the green filter block 810 are disposed on the color filter substrate
  • the liquid crystal layer 500 is packaged between the array substrate and the counter substrate.
  • the common electrode 600 and the pixel electrode 100 are disposed on the array substrate; the black matrix 700 and the filter block are disposed on the counter substrate; and the liquid crystal layer 500 is packaged between the array substrate and the counter substrate.
  • an array substrate includes a plurality of pixel units arranged in a matrix. Specifically, in the pixel unit matrix, each row of pixel units includes a plurality of first pixel units and a plurality of second pixel units that are spaced apart. That is to say, the pixel units of the entire array substrate are divided into two types: a first pixel unit and a second pixel unit, and in each row, the two types of pixel units are alternately arranged. As shown in FIG. 3, the array substrate further includes a first pixel electrode layer, a second pixel electrode layer, and a transparent insulating layer 200 between the two pixel electrode layers. As shown in FIG.
  • a plurality of first pixel electrodes 110 respectively for a plurality of first pixel units are disposed in the first pixel electrode layer at intervals, and are respectively used for a plurality of second pixels.
  • a plurality of second pixel electrodes 120 of the cells are spaced apart in the second pixel electrode layer.
  • the orthographic projection of each of the second pixel electrodes 120 on the first pixel electrode layer is also located between the adjacent two first pixel electrodes 110.
  • the array substrate according to an embodiment of the present disclosure can be applied to a display device (for example, a liquid crystal display device) that requires a backlight.
  • a display device for example, a liquid crystal display device
  • the first pixel electrode layer is disposed under the second pixel unit layer.
  • the accuracy requirement for the mask for forming the first pixel electrode 110 by the patterning process is lowered.
  • the second pixel electrode layer since the interval between the second pixel electrodes 120 is large, the accuracy requirement for the mask for forming the second pixel electrode 120 by the patterning process is lowered.
  • the second pixel electrode 120 which is accurate in size and position. Therefore, in the array substrate provided by the embodiment of the present disclosure, more pixel units can be disposed, thereby facilitating realization of a high resolution (ie, high PPI) display device.
  • the display device including the array substrate performs display, it is possible to prevent the color mixture from occurring.
  • the pixel can form an emission angle when emitting light, and the interval between adjacent two pixel electrodes is small, a black matrix may not be required to be disposed in the display panel according to an embodiment of the present disclosure, thereby further Reduce the cost of the display panel.
  • the distance between the first pixel electrode and the second pixel electrode can be flexibly selected as needed.
  • the lateral spacing between the orthographic projection of each second pixel electrode 120 on the first pixel electrode layer and the adjacent first pixel electrode 110 Between 0.1 microns and 0.8 microns in order to reduce the accuracy requirements for the mask substrate while still ensuring a high PPI.
  • the lateral spacing refers to the spacing within the extended face of the first pixel electrode layer.
  • the lateral spacing L can be controlled to within 0.5 microns.
  • the material for forming the transparent insulating layer 200 may be flexibly selected as needed, as long as the first pixel electrode layer and the second pixel electrode layer can be insulated and spaced apart.
  • the transparent insulating layer 200 may be formed using a material that forms a passivation layer in the array substrate. That is, the transparent insulating layer 200 is formed using an oxide of silicon and/or a nitride of silicon.
  • the array substrate further includes a plurality of data lines 300. Further, in order to increase the aperture ratio, the orthographic projection of each data line 300 on the first pixel electrode layer is sandwiched between a second pixel electrode 120 on the first pixel electrode layer and a first pixel electrode 110. between.
  • An advantage of the data line being disposed at the horizontal interval L between the first pixel electrode 110 and the second pixel electrode 120 is that it can be occluded with a black matrix. It is easily understood that the extending direction of the data line 300 coincides with the column direction of the pixel unit.
  • the width of the data line can be flexibly set as needed.
  • data line 300 may have a width between 0.8 microns and 1.5 microns.
  • a display panel includes the array substrate described in detail in any of the above embodiments.
  • the display panel can have any suitable specific type.
  • the display panel may be a liquid crystal display panel or other display panel that requires a backlight.
  • the display panel can prevent dark light leakage and suppress the generation of color mixture while achieving a higher PPI.
  • the display panel is a liquid crystal display panel, that is, the display panel further includes a liquid crystal layer 500.
  • the display panel is a liquid crystal display panel in which the liquid crystal layer 500 is encapsulated between the array substrate and the counter substrate by using the counter substrate and the array substrate.
  • a color film layer may be disposed on the counter substrate.
  • the color film layer may include a plurality of filter units respectively corresponding to the plurality of pixel units, wherein each of the filter units includes a plurality of color filter blocks having different colors from each other.
  • the red filter block 820 corresponds to the first pixel unit where the first pixel electrode 110 is located
  • the green filter block 810 corresponds to the second pixel where the second pixel electrode 120 is located. unit.
  • the array substrate according to an embodiment of the present disclosure can be applied to both a TN type display panel and an ADS type display panel.
  • the array substrate is applied to a TN type display panel.
  • the common electrode 600 is disposed on the counter substrate.
  • the horizontal distance between the pixel electrodes can be reduced to 0.5 ⁇ m, thereby obtaining a high PPI.
  • a display device comprising the display panel described in any of the above embodiments.
  • the display device can realize a high PPI and does not exhibit dark state light leakage, and therefore, such a display device has a good display effect.
  • the display device including the display panel shown in FIG. 3 is further subjected to dark state display simulation using TechWiz 3D software, and at the same time, dark display simulation is also performed on the display device including the display panel shown in FIG. 1.
  • the lateral interval between the first pixel electrode 110 and the second pixel electrode 120 of the display device shown in FIG. 3 is selected to be 0.5 micrometers
  • the width of the data line 300 is selected to be 1.5 micrometers
  • the black matrix is selected.
  • the width of 700 is chosen to be 2.5 microns.
  • the display luminance S2 hardly exhibits a dark state light leakage phenomenon.
  • the aperture ratio of the display device can be as high as 29%.
  • the display device shown in FIG. 1 was also subjected to dark state display simulation using TechWiz 3D software.
  • the interval between the pixel electrodes 100 is 2.0 micrometers
  • the width of the data lines 300 is 6.4 micrometers
  • the width of the black matrix is 4.3 micrometers.
  • the luminance value of the display luminance S1 is higher at the boundary of the pixel electrode. This means that a significant light leakage phenomenon occurs at the boundary of the pixel electrode 100.
  • the aperture ratio of the display device is only 4.9%.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种阵列基板，该阵列基板包括呈矩阵排布的多个像素单元，其中，每一行像素单元由间隔地设置的多个第一像素单元和多个第二像素单元构成。进一步地，该阵列基板还包括：第一像素电极层、第二像素电极层、以及位于第一像素电极层和第二像素电极层之间的透明绝缘层（200）。在以上阵列基板中，对于每一行像素单元，用于多个第一像素单元的多个第一像素电极（110）间隔地设置在第一像素电极层中，用于多个第二像素单元的多个第二像素电极（120）间隔地设置在第二像素电极层中，并且每一个第二像素电极（120）在第一像素电极层上的正投影位于相邻的两个第一像素电极（110）之间。还提供了一种显示面板和一种显示装置。

Description

阵列基板、显示面板和显示装置
本申请要求2017年5月12日提交的中国专利申请号201710335667.0的优先权，该中国专利申请的公开内容以其整体通过引用并入本文。
技术领域
本公开涉及显示技术领域，并且具体地，涉及一种阵列基板、一种包括该阵列基板的显示面板和一种包括该显示面板的显示装置。
背景技术
为了获得更加真实的显示效果，期望的是，液晶显示面板具有较高的PPI(pixel per inch，每英寸像素数)。但是，目前，高PPI的TN(Twisted Nematic)型液晶显示面板容易出现暗态漏光的问题，并且高PPI的ADS(AdvancedSuperDimensionSwitch)液晶面板容易出现混色现象。
因此，如何提供一种不出现暗态漏光且不发生混色的液晶显示面板成为本领域亟待解决的技术问题。
发明内容
本公开的目的在于，提供一种阵列基板、一种包括该阵列基板的显示面板和一种包括该显示面板的显示装置，以便解决或者至少缓解以上技术问题中的一个或多个。
为了实现上述目的，根据本公开的一个方面，提供一种阵列基板。该阵列基板包括呈矩阵排布的多个像素单元，其中，每一行像素单元由间隔地设置的多个第一像素单元和多个第二像素单元构成。进一步地，该阵列基板还包括第一像素电极层、第二像素电极层、以及位于第一像素电极层和第二像素电极层之间的透明绝缘层。此外，对于该阵列基板中的每一行像素单元，用于所述多个第一像素单元的多个第一像素电极间隔地设置在第一像素电极层中，用于所述多个第二像素单元的多个第二像素电极间隔地设置在第二像素电极层中，并且每一个第二像素电极在第一像素电极层上的正投影位于相邻的两个第一像 素电极之间。此处需要指出的是，在本公开的描述中，表述“正投影”指的是沿着与第一像素电极层的延伸面垂直的方向的投影。
可选地，在以上阵列基板的实施例中，对于每一行像素单元，每一个第二像素电极在第一像素电极层上的正投影与相邻的第一像素电极之间的间距在0.1微米至0.8微米之间，其中，该间距指的是在第一像素电极层的延伸面内的间距。
可选地，在以上阵列基板的实施例中，透明绝缘层由硅的氧化物和硅的氮化物中的至少一个制成。
可选地，在具体实施例中，阵列基板还包括多条数据线，其中，每一条数据线在第一像素电极层上的正投影夹在一个第二像素电极在第一像素电极层上的正投影与一个第一像素电极之间。
可选地，在以上阵列基板的实施例中，数据线的宽度在0.8微米至1.5微米之间。
根据本公开的第二个方面，提供一种显示面板。该显示面板包括根据以上任一个实施例所述的阵列基板。
可选地，在具体实施例中，显示面板还包括对盒基板和设置在该对盒基板上的彩膜层。进一步地，彩膜层包括分别对应于所述多个像素单元的多个滤光单元，其中，每一个滤光单元包括多个颜色互不相同的彩色滤光块。
可选地，在以上显示面板的具体实施例中，对盒基板上还设置有多个公共电极。
根据本公开的第三个方面，提供一种显示装置，该显示装置包括以上任一个实施例所述的显示面板。
附图说明
以下附图用来提供对本公开的进一步理解，并且构成本公开的说明书的一部分。这样的附图与下面的具体实施方式一起用于解释本公开，但是并不构成对本公开的限制。在附图中：
图1是一种典型的TN型阵列基板的示意图；
图2是一种典型的ADS型阵列基板的示意图；
图3是根据本公开的实施例的显示面板的示意图；
图4是图示了根据本公开的实施例的显示面板中的第一像素电极 和第二像素电极的分布情况的俯视图；
图5是用于图1中的TN型阵列基板的发光模拟图；以及
图6是用于包括图3中的显示面板的显示装置的发光模拟图。
具体实施方式
以下结合附图对本公开的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本公开，并不用于限制本公开。
通常，液晶显示面板包括两种类型：TN(Twisted Nematic)型液晶显示面板和ADS(AdvancedSuperDimensionSwitch)型液晶显示面板。参照图1所示，在典型的TN型液晶显示面板中，像素电极100和数据线300设置在阵列基板上；公共电极600、黑矩阵700和滤光块(在图1中示出了红色滤光块820和绿色滤光块810)设置在彩膜基板上；并且液晶层500封装在阵列基板和对盒基板之间。与此相对，如图2所示，在典型的ADS型液晶显示面板中，公共电极600和像素电极100设置在阵列基板上；黑矩阵700和滤光块设置在对盒基板上；并且液晶层500封装在阵列基板和对盒基板之间。参照以上在背景技术章节所述，对于TN型液晶显示面板，较高的PPI将容易引起暗态漏光的问题；而对于ADS型液晶显示面板，较高的PPI将会引发混色现象。
在本公开的实施例中，提供一种阵列基板。该阵列基板包括以矩阵形式排布的多个像素单元。具体地，在像素单元矩阵中，每一行像素单元包括间隔地设置的多个第一像素单元和多个第二像素单元。也就是说，整个阵列基板的像素单元被分为两类：第一像素单元和第二像素单元，并且在每一行中，这两类像素单元交替地布置。如图3所示，该阵列基板还包括第一像素电极层、第二像素电极层、以及位于两个像素电极层之间的透明绝缘层200。如图4所示，在每一行像素单元中，分别用于多个第一像素单元的多个第一像素电极110间隔地设置在第一像素电极层中，并且分别用于多个第二像素单元的多个第二像素电极120间隔地设置在第二像素电极层中。此外，在每一行像素单元中，每一个第二像素电极120在第一像素电极层上的正投影还位于相邻的两个第一像素电极110之间。
根据本公开的实施例的阵列基板可以应用于需要背光的显示装置 (例如，液晶显示装置)中。具体地，在图3中所示的实施例中，第一像素电极层设置在第二像素单元层下方。此时，在第一像素电极层中，由于第一像素电极110之间的间隔较大，所以降低了对用于通过构图工艺形成第一像素电极110的掩模板的精度要求。由此，有助于获得尺寸、位置均精确的第一像素电极110。同样地，在第二像素电极层中，由于第二像素电极120之间的间隔较大，所以降低了对用于通过构图工艺形成第二像素电极120的掩模板的精度要求。以这样的方式，容易获得尺寸、位置均精确的第二像素电极120。因此，在本公开的实施例提供的阵列基板中，可以设置更多的像素单元，从而有利于实现高分辨率(即，高PPI)的显示装置。
此外，在本公开的实施例提供的阵列基板中，由于两层像素电极层之间还存在沿阵列基板的厚度方向的间隔，因此，从背光源发出的光，在透过位于下方的第一像素电极层时，可以形成一个发射角。由此，在包括该阵列基板的显示装置进行显示时，可以防止发生混色现象。
如上文所述，由于像素在发光时可以形成发射角，并且相邻两个像素电极之间的间隔较小，因此，根据本公开的实施例的显示面板中可以不需要设置黑矩阵，从而进一步降低了显示面板的成本。
在本公开的实施例中，对第一像素电极和第二像素电极之间的距离可以根据需要灵活地选取。例如，作为一种可选的实施方式，在每一行像素单元中，每一个第二像素电极120在第一像素电极层上的正投影与相邻的第一像素电极110之间的横向间隔L在0.1微米至0.8微米之间，以便降低对掩模基板的精度要求而同时还保证较高的PPI。此处需要指出的是，横向间隔指的是在第一像素电极层的延伸面内的间隔。此外，当上述横向间隔L处于0.1微米至0.8微米之间的范围内时，还可以最大程度地避免暗态漏光的发生。进一步可选地，可以将横向间隔L控制在0.5微米以内。
在本公开的实施例中，用于形成透明绝缘层200的材料可以根据需要灵活选择，只要第一像素电极层和第二像素电极层能够绝缘间隔开即可。例如，作为一种可选的实施方式，可以利用形成阵列基板中的钝化层的材料来形成透明绝缘层200。也就是说，利用硅的氧化物和/或硅的氮化物来形成透明绝缘层200。
本领域技术人员容易理解的是，为了便于向第一像素电极110和第二像素电极提供灰阶信号，阵列基板还包括多条数据线300。进一步可选地，为了增加开口率，每一条数据线300在第一像素电极层上的正投影夹在一个第二像素电极120在第一像素电极层上的正投影与一个第一像素电极110之间。将数据线设置在第一像素电极110与第二像素电极120之间的水平间隔L处的优点在于，可以利用黑矩阵对其进行遮挡。容易理解的是，数据线300的延伸方向与像素单元的列方向一致。
在本公开的实施例中，数据线的宽度可以根据需要灵活设置。例如，作为一种可选的实施方式，数据线300的宽度可以在0.8微米至1.5微米之间。
根据本公开的第二个方面，提供一种显示面板。该显示面板包括在以上任一个实施例中详细描述的阵列基板。
在本公开的实施例中，显示面板可以具有任何适当的具体类型。例如，显示面板可以是液晶显示面板，也可以是需要背光源的其它显示面板。
如上文所述，由于采用了本公开的实施例所提供的上述阵列基板，在实现较高PPI的同时，显示面板还可以防止暗态漏光并且抑制混色的产生。
在图3所示的具体实施例中，显示面板为液晶显示面板，即，显示面板还包括液晶层500。
如图3所示，显示面板为液晶显示面板，其中，利用对盒基板和阵列基板将液晶层500封装在阵列基板和对盒基板之间。
为了实现彩色显示，可选地，在进一步的实施例中，可以在对盒基板上设置彩膜层。如图3所示，彩膜层可以包括分别对应于多个像素单元的多个滤光单元，其中，每一个滤光单元包括多个颜色互不相同的彩色滤光块。
例如，在图3所示的具体实施例中，红色滤光块820对应于第一像素电极110所在的第一像素单元，并且绿色滤光块810对应于第二像素电极120所在的第二像素单元。
根据本公开的实施例的阵列基板既可以应用于TN型显示面板，也可以应用于ADS型显示面板。在图3所示的实施例中，阵列基板应用 于TN型显示面板中。作为TN型显示面板，公共电极600设置在对盒基板上。
利用本申请所提供的阵列基板，像素电极之间的水平距离可以缩小到0.5μm，从而获得高PPI。
根据本公开的第三个方面，提供一种显示装置，其包括在以上任一个实施例中描述的显示面板。如上文所述，该显示装置可以实现高PPI，并且不会出现暗态漏光，因此，这样的显示装置具有良好的显示效果。
为了便于说明，进一步利用TechWiz 3D软件对包括图3所示的显示面板的显示装置进行暗态显示模拟，并且同时，还对包括图1所示的显示面板的显示装置进行暗态显示模拟。
在本公开的实施例中，图3所示的显示装置的第一像素电极110与第二像素电极120之间的横向间隔选取为0.5微米，数据线300的宽度选取为1.5微米，并且黑矩阵700的宽度选取为2.5微米。通过图6所示的模拟结果可知，显示亮度S2几乎不会出现暗态漏光现象。而且，该显示装置的开口率可以高达29％。
作为对比，还利用TechWiz 3D软件对图1所示的显示装置进行暗态显示模拟。在图1中，像素电极100之间的间隔为2.0微米，数据线300的宽度为6.4微米，并且黑矩阵的宽度为4.3微米。通过图5所示的模拟结果可知，显示亮度S1的亮度值在像素电极的边界处较高。这意味着，在像素电极100的边界处出现明显的漏光现象。此外，在该实施例中，显示装置的开口率仅为4.9％。
可以理解的是，以上实施例仅仅是为了说明本公开的原理而采用的示例性实施例。然而，本公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，并且所有这些变型和改进也应落入本公开的保护范围内。
附图标记列表
100 像素电极
110 第一像素电极
120 第二像素电极
200 透明绝缘层
300 数据线
500 液晶层
600 公共电极
700 黑矩阵
810 绿色滤光块
820 红色滤光块

Claims (9)

  1. 一种阵列基板，包括：
    呈矩阵排布的多个像素单元，其中，每一行像素单元由间隔地设置的多个第一像素单元和多个第二像素单元构成，并且
    所述阵列基板还包括：
    第一像素电极层；
    第二像素电极层；以及
    位于所述第一像素电极层和所述第二像素电极层之间的透明绝缘层，
    其中，对于每一行像素单元，
    用于所述多个第一像素单元的多个第一像素电极间隔地设置在所述第一像素电极层中，
    用于所述多个第二像素单元的多个第二像素电极间隔地设置在所述第二像素电极层中，并且
    每一个第二像素电极在所述第一像素电极层上的正投影位于相邻的两个第一像素电极之间。
  2. 根据权利要求1所述的阵列基板，其中，对于每一行像素单元，
    每一个第二像素电极在所述第一像素电极层上的正投影与相邻的第一像素电极之间的间距在0.1微米至0.8微米之间，其中，所述间距是在所述第一像素电极层的延伸面内的间距。
  3. 根据权利要求1或2所述的阵列基板，其中
    所述透明绝缘层由硅的氧化物和硅的氮化物中的至少一个制成。
  4. 根据权利要求1或2所述的阵列基板，其中
    所述阵列基板还包括多条数据线，每一条数据线在所述第一像素电极层上的正投影夹在一个第二像素电极在所述第一像素电极层上的正投影与一个第一像素电极之间。
  5. 根据权利要求4所述的阵列基板，其中
    所述数据线的宽度在0.8微米至1.5微米之间。
  6. 一种显示面板，包括根据权利要求1-5中任一项所述的阵列基板。
  7. 根据权利要求6所述的显示面板，还包括：
    对盒基板；以及
    设置在所述对盒基板上的彩膜层，其中
    所述彩膜层包括分别对应于所述多个像素单元的多个滤光单元，每一个滤光单元包括多个颜色互不相同的彩色滤光块。
  8. 根据权利要求7所述的显示面板，其中
    所述对盒基板上还设置有多个公共电极。
  9. 一种显示装置，包括根据权利要求6-8中任一项所述的显示面板。
PCT/CN2018/070026 2017-05-12 2018-01-02 阵列基板、显示面板和显示装置 WO2018205647A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/068,636 US11409168B2 (en) 2017-05-12 2018-01-02 Array substrate, display panel and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710335667.0A CN107037641B (zh) 2017-05-12 2017-05-12 阵列基板、显示面板和显示装置
CN201710335667.0 2017-05-12

Publications (1)

Publication Number Publication Date
WO2018205647A1 true WO2018205647A1 (zh) 2018-11-15

Family

ID=59537260

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/070026 WO2018205647A1 (zh) 2017-05-12 2018-01-02 阵列基板、显示面板和显示装置

Country Status (3)

Country Link
US (1) US11409168B2 (zh)
CN (1) CN107037641B (zh)
WO (1) WO2018205647A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107037641B (zh) * 2017-05-12 2020-04-24 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置
CN108598120A (zh) * 2018-04-27 2018-09-28 京东方科技集团股份有限公司 显示基板及其制造方法、显示面板和显示装置
CN111740035B (zh) * 2020-07-03 2023-08-22 京东方科技集团股份有限公司 阵列基板、显示面板及制造方法
CN112068346A (zh) * 2020-09-28 2020-12-11 成都中电熊猫显示科技有限公司 阵列基板以及液晶显示面板
WO2023184277A1 (zh) * 2022-03-30 2023-10-05 京东方科技集团股份有限公司 一种显示基板、显示面板和显示装置
CN114924437B (zh) * 2022-05-20 2024-01-12 北京京东方技术开发有限公司 阵列基板及其制备方法、显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100296040A1 (en) * 2009-05-22 2010-11-25 Sanghun Han Array substrate for fringe field switching mode liquid crystal display device
CN104062814A (zh) * 2013-03-19 2014-09-24 北京京东方光电科技有限公司 一种像素电极层、阵列基板、显示面板和显示装置
CN105093685A (zh) * 2015-09-25 2015-11-25 京东方科技集团股份有限公司 一种显示设备
CN105824158A (zh) * 2016-05-30 2016-08-03 京东方科技集团股份有限公司 阵列基板、显示装置及阵列基板制作方法
CN106526942A (zh) * 2017-01-06 2017-03-22 京东方科技集团股份有限公司 显示面板和显示装置
CN107037641A (zh) * 2017-05-12 2017-08-11 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5883687A (en) * 1997-04-02 1999-03-16 International Business Machines Corporation Polarization independent liquid crystal phase gratings for reflective spatial light modulators
KR100260359B1 (ko) * 1997-04-18 2000-07-01 김영환 액정 표시 장치 및 그 제조방법
KR100312260B1 (ko) * 1999-05-25 2001-11-03 구본준, 론 위라하디락사 액정표시장치 및 그 제조방법
JP3503685B2 (ja) * 1999-08-30 2004-03-08 日本電気株式会社 液晶表示装置及びその製造方法
KR100413668B1 (ko) * 2001-03-29 2003-12-31 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판 제조방법
CN100565313C (zh) * 2006-09-15 2009-12-02 爱普生映像元器件有限公司 液晶显示板
JP4766094B2 (ja) * 2008-10-01 2011-09-07 ソニー株式会社 表示パネル、表示装置
KR20110043166A (ko) * 2009-10-21 2011-04-27 삼성전자주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치
TWI397757B (zh) * 2009-12-22 2013-06-01 Au Optronics Corp 聚合物穩定配向液晶顯示面板及液晶顯示面板
CN202443185U (zh) 2012-02-09 2012-09-19 京东方科技集团股份有限公司 一种3d显示装置
CN102629041B (zh) 2012-02-09 2014-04-16 京东方科技集团股份有限公司 一种3d显示装置及其制造方法
KR101937426B1 (ko) * 2012-12-20 2019-01-10 엘지디스플레이 주식회사 씨오티 타입 액정표시장치용 어레이 기판
JP2015206917A (ja) * 2014-04-21 2015-11-19 株式会社ジャパンディスプレイ 液晶表示装置
KR102310902B1 (ko) * 2014-09-15 2021-10-12 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
CN104749843B (zh) * 2015-03-26 2018-09-21 京东方科技集团股份有限公司 阵列基板及其制作方法、驱动方法及显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100296040A1 (en) * 2009-05-22 2010-11-25 Sanghun Han Array substrate for fringe field switching mode liquid crystal display device
CN104062814A (zh) * 2013-03-19 2014-09-24 北京京东方光电科技有限公司 一种像素电极层、阵列基板、显示面板和显示装置
CN105093685A (zh) * 2015-09-25 2015-11-25 京东方科技集团股份有限公司 一种显示设备
CN105824158A (zh) * 2016-05-30 2016-08-03 京东方科技集团股份有限公司 阵列基板、显示装置及阵列基板制作方法
CN106526942A (zh) * 2017-01-06 2017-03-22 京东方科技集团股份有限公司 显示面板和显示装置
CN107037641A (zh) * 2017-05-12 2017-08-11 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置

Also Published As

Publication number Publication date
US20210165289A1 (en) 2021-06-03
CN107037641A (zh) 2017-08-11
US11409168B2 (en) 2022-08-09
CN107037641B (zh) 2020-04-24

Similar Documents

Publication Publication Date Title
WO2018205647A1 (zh) 阵列基板、显示面板和显示装置
US9971188B2 (en) Display device
US9812512B2 (en) Pixel structure and display apparatus
US20180321549A1 (en) Color filter substrate and liquid crystal display device
WO2019085057A1 (zh) 液晶显示面板以及液晶显示装置
US10223954B2 (en) Array substrate and method for manufacturing the same, and display apparatus
US8089440B2 (en) Liquid crystal flat panel display with an integral heater of predeterminable capacity
US9461073B2 (en) Array substrate, manufacturing method thereof, and display device
WO2018054138A1 (zh) 阵列基板、显示面板、显示装置及显示面板的设计方法
TWI519880B (zh) 顯示面板
TW201544880A (zh) 顯示面板
CN109581728A (zh) 显示装置
CN104317096A (zh) 一种彩膜基板、液晶面板和显示装置
WO2017186095A1 (zh) 显示面板及其制备方法、显示装置
JP6881981B2 (ja) アレイ基板、表示装置及びアレイ基板の製造方法
WO2020238323A1 (zh) 显示面板及其制作方法、显示装置
WO2018223788A1 (zh) 彩膜基板、显示面板及显示装置
CN105093727B (zh) 一种阵列基板、曲面显示面板、曲面显示装置
CN109240012A (zh) 阵列基板、显示面板和显示装置
CN205809499U (zh) 一种阵列基板、显示面板和显示装置
CN105607338B (zh) 显示基板及其制造方法和显示装置
US9577104B2 (en) COA substrate and liquid crystal display panel
CN205787496U (zh) 一种显示面板及显示装置
US11422416B2 (en) Array substrate and display panel
JP2008268839A (ja) 画像表示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18798141

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 08.04.2020)

122 Ep: pct application non-entry in european phase

Ref document number: 18798141

Country of ref document: EP

Kind code of ref document: A1