WO2018201717A1 - 一种pecvd设备炉口进气结构 - Google Patents
一种pecvd设备炉口进气结构 Download PDFInfo
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- WO2018201717A1 WO2018201717A1 PCT/CN2017/114883 CN2017114883W WO2018201717A1 WO 2018201717 A1 WO2018201717 A1 WO 2018201717A1 CN 2017114883 W CN2017114883 W CN 2017114883W WO 2018201717 A1 WO2018201717 A1 WO 2018201717A1
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- flange
- intake pipe
- intake
- air
- air intake
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Definitions
- the utility model relates to the technical field of PECVD equipment, and more particularly to a furnace inlet air intake structure of a PECVD equipment.
- PECVD equipment It is used to plate anti-reflection film on the surface of monocrystalline silicon wafers and polycrystalline silicon wafers.
- various manufacturers have been pursuing the improvement of technology, and the air intake mode is the key to process improvement.
- Prior art PECVD There are two problems with the furnace inlet structure of the equipment:
- the technical solution of the utility model is: a furnace inlet structure of a PECVD device, comprising a flange, the outer side wall of the flange is provided with a plurality of outer air inlet pipes, wherein the inner side wall of the flange is A plurality of inner intake pipes are installed from top to bottom, and each inner intake pipe is respectively arranged along a circumferential direction of the inner side wall of the flange, and one end of each inner intake pipe is an intake end, and the other end is a closed end.
- the intake end of each inner intake pipe is in communication with the outlet end of an outer intake pipe, and the inner wall of each inner intake pipe is uniformly disposed along the circumferential direction of each inner intake pipe. The vent of the center of the blue.
- the plurality of inner intake pipes are placed in the recess and fixed by screws with a clamp.
- the utility model relates to a furnace inlet structure of a PECVD device, in which a plurality of gases enter from a corresponding outer intake pipe, and then enter the inner intake pipe, and then are uniformly emitted toward the center of the flange through a plurality of air outlet holes on the inner intake pipe, so that A variety of gases are uniformly mixed into the reaction chamber after injection, and the desired process is easily achieved.
- the intake end of each inner intake pipe is detachably connected to the outlet end of an outer intake pipe, and the plurality of inner intake pipes are placed in the grooves on the inner wall of the flange, and are pressed by the pressing block to pass the pressure block.
- the screw is fixed to the inner wall of the flange and needs to be cleaned or replaced.
- FIG. 1 is a schematic top view of a flange of a furnace inlet structure of a PECVD apparatus according to the present invention.
- Figure 6 is a cross-sectional view of the plane along the circumference of the center line of the second inner intake pipe.
- each of the inner intake pipes is arranged along the entire circumference of the inner side wall of the flange, and the inner wall of each inner intake pipe is uniformly disposed with a plurality of facing flanges along the entire circumference of each inner intake pipe. The vent of the center.
- the number of the grooves may be one or plural. When the number of the grooves is plural, each of the inner intake pipes is placed in one groove. The number of the compacts is plural and evenly distributed on the inner wall of the flange.
- the plurality of air outlet holes on the second inner air intake pipe 32 are uniformly disposed along the entire circumference of the second inner air intake pipe 32, and the plurality of air outlet holes on the first inner air intake pipe 31 and the second inner air intake pipe 32 are mutually Staggered.
- the intake end of the first inner intake pipe 31 is fitted into the outlet end of the first outer intake pipe 21, and the intake end of the first inner intake pipe 31 and the outlet end of the first outer intake pipe 21 are provided.
- a sealing ring 6 is provided at the socket stack. As shown in FIG.
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ventilation (AREA)
Abstract
本实用新型公开了一种PECVD设备炉口进气结构,包括法兰,所述法兰的外侧壁上设置有多个外进气管,所述法兰的内侧壁上由上至下安装有多个内进气管,且每个内进气管分别沿着所述法兰的内侧壁的周向布置,每个内进气管的一端为进气端,另一端为封闭端,每个内进气管的进气端与一个外进气管的出气端连通,所述每个内进气管的管壁上沿该每个内进气管的周向均匀设有多个朝向所述法兰的中心的出气孔。本实用新型使得多种气体在射出后均匀混合的进入反应腔室,容易达到理想的工艺;而且在需要清洗或者更换该 PECVD 设备炉口进气结构时,只需要拆下内进气管即可,而且相比现有技术需要更换整个法兰,节约了成本和资源。
Description
本实用新型涉及PECVD设备技术领域,更具体地说是涉及一种PECVD设备炉口进气结构。
在光伏行业,PECVD 设备
用于对单晶硅片、多晶硅片的表面镀减反膜,目前各生产厂家一直在追求工艺的提升,而进气方式是工艺提升的关键。现有技术中PECVD
设备的炉口进气结构存在以下两点问题:
一是,两种气体
在法兰外部分别进入法兰内部,再在法兰内部通过简单的Y型进气嘴将两种气体混合,其混合的路径短,导致这两种气体在进入反应腔前混合不均匀,工艺难以达到理想的效果。
二是,
法兰内部设置有进气装置,但进气装置和法兰是一体的,不能拆卸。而进气装置的进气口又很容易发生堵塞,由于进气装置和法兰是一体的,这样进气装置的进气口堵塞后就很难进行清洗,而是需要更换新的法兰,从而造成资源浪费和成本增加。
本实用新型要解决的技术问题是提供一种能将多种气体混合均匀的PECVD设备炉口进气结构。
本实用新型的技术方案为:一种PECVD设备炉口进气结构,包括法兰,所述法兰的外侧壁上设置有多个外进气管,其特征在于,所述法兰的内侧壁上由上至下安装有多个内进气管,且每个内进气管分别沿着所述法兰的内侧壁的周向布置,每个内进气管的一端为进气端,另一端为封闭端,每个内进气管的进气端与一个外进气管的出气端连通,所述每个内进气管的管壁上沿该每个内进气管的周向均匀设有多个朝向所述法兰的中心的出气孔。
所述外进气管数量为两个,所述内进气管数量为两个,该两个内进气管分别沿着法兰的内侧壁的整个周向布置,该两个内进气管上的多个出气孔沿每个内进气管的整个周向均匀设置。
上、下相邻两个内进气管上的出气孔相互错开设置。
所述每个内进气管的进气端与一个外进气管的出气端可拆卸连接,所述法兰的内侧壁上设置有凹槽并沿着所述法兰的内侧壁的整个周向布置,所述多个内进气管可拆卸的安装于所述凹槽内。
所述每个内进气管的进气端与一个外进气管的出气端套接在一起。
所述每个内进气管的进气端与一个外进气管的出气端的套接叠合处设置有密封圈。
所述多个内进气管放置于所述凹槽内并用压块通过螺钉固定。
本实用新型提出的PECVD设备炉口进气结构,多种气体从对应的外进气管进入,再进入内进气管后通过内进气管上的多个出气孔均匀的朝法兰的中心射出,使得多种气体在射出后均匀混合的进入反应腔室,容易达到理想的工艺。另外,每个内进气管的进气端与一个外进气管的出气端可拆卸连接,多个内进气管放置于法兰内壁上的凹槽内,并用压块压住后,将压块通过螺钉固定在法兰的内壁上,在需要清洗或者更换该
PECVD 设备炉口进气结构时,只需要拆下内进气管即可,而且相比现有技术需要更换整个法兰,节约了成本和资源。
图1为本实用新型PECVD设备炉口进气结构中法兰的顶面示意图。
图2为图1中A-A向的剖视图。
图3为图1中B-B向的剖视图。
图4为沿着第一内进气管的中心线构成的圆周所在平面的剖视图。
图5为图4中C处的放大图。
图6为沿着第二内进气管的中心线构成的圆周所在平面的剖视图。
如图1,本实用新型提出的 PECVD
设备炉口进气结构,包括法兰1,该法兰1的外侧壁上设置有多个外进气管2,多个外进气管2用于气体输入,该法兰1安装在 PECVD 设备的炉口上。
如图2,法兰1的内侧壁上由上至下安装有多个内进气管3,且每个内进气管沿着法兰1的内侧壁的周向布置,每个内进气管的一端为进气端,另一端为封闭端,每个内进气管的进气端与一个外进气管的出气端连通,每个内进气管的管壁上沿该每个内进气管的周向均匀设置多个朝向法兰的中心的出气孔5。多种气体从对应的外进气管进入,再进入内进气管后通过内进气管上的多个出气孔均匀的朝法兰的中心射出,使得多种气体在射出后均匀混合的进入反应腔室,容易达到理想的工艺。
本实施例中,每个内进气管沿着法兰的内侧壁的整个周向布置,每个内进气管的管壁上沿该每个内进气管的整个周向均匀设置多个朝向法兰的中心的出气孔。
如图2,上、下相邻两个内进气管上的出气孔5相互错开设置,使得多种气体均匀混合的效果更好。
如图2和图3,每个内进气管的进气端与一个外进气管的出气端可拆卸连接,法兰1的内侧壁上设置有凹槽11并沿着法兰1的内侧壁的整个周向布置,多个内进气管可拆卸的安装于凹槽内。本实施例中,多个内进气管3放置于凹槽11内并用压块4通过螺钉固定。这样多个内进气管可以很容易从法兰上拆下,在需要清洗或者更换该
PECVD
设备炉口进气结构时,只需要拆下内进气管即可,而且相比现有技术需要更换整个法兰,节约了成本和资源。在安装内进气管时先将内进气管放置于法兰内侧壁上的凹槽内,然后再用压块压在内进气管上,再用螺钉将压块一端或者两端与法兰的内壁连接。凹槽可以为一个,也可以为多个,当凹槽数量为多个时,每个内进气管放置到一个凹槽内。压块的数量具有多个,均匀的分布在法兰的内壁上。
本实施例中,每个内进气管的进气端与一个外进气管的出气端套接在一起。每个内进气管的进气端与一个外进气管的出气端的套接叠合处设置有密封圈,保证了密封效果,密封圈的数量至少为一个。多个外进气管的出气端分别插接在法兰的外侧壁上。
如图1,本实施例中法兰1的外侧壁上设置有两个外进气管,分别为第一外进气管21和第二外进气管22。第一外进气管21和第二外进气管22上下安装在法兰的外侧壁上且是错开的,利于通气。
如图2和图3,法兰1的外侧壁上安装有两个内进气管,分别为第一内进气管31和第二内进气管32,第一内进气管31和第二内进气管32上下安装在法兰的内侧壁的凹槽(这里凹槽数量为一个)内并用压块4通过螺钉固定。第一内进气管31和第二内进气管32均沿着法兰的内侧壁的整个周向布置,第一内进气管31上的多个出气孔沿第一内进气管31的整个周向均匀设置,第二内进气管32上的多个出气孔沿第二内进气管32的整个周向均匀设置,第一内进气管31和第二内进气管32上的多个出气孔是相互错开的。如图4和图5,第一内进气管31的进气端套入第一外进气管21的出气端,且第一内进气管31的进气端与第一外进气管21的出气端的套接叠合处设置密封圈6。如图6,第二内进气管的进气端套入第二外进气管的出气端,且第二内进气管31的进气端与第二外进气管21的出气端的套接叠合处设置密封圈。第一内进气管、第二内进气管上的相邻两个出气孔之间的弧度为15度。A气体从第一外进气管进入,再进入第一内进气管后通过第一内进气管上的多个出气孔均匀的朝法兰的中心射出,B气体从第二外进气管进入,再进入第二内进气管后通过第二内进气管上的多个出气孔均匀的朝法兰的中心射出,这样A气体和B气体在射出后就会均匀混合的进入反应腔室。
在另一实施例中法兰的外侧壁上设置有三个外进气管,分别为第一外进气管、第二外进气管和第三外进气管,法兰的内侧壁上安装有三个内进气管,分别为第一内进气管、第二内进气管和第三内进气管。第一内进气管与第一外进气管连通,第二内进气管与第二外进气管连通,第三内进气管与第三外进气管连通。
以上的具体实施例仅用以举例说明本实用新型的构思,本领域的普通技术人员在本实用新型的构思下可以做出多种变形和变化,这些变形和变化均包括在本实用新型的保护范围之内。
Claims (7)
- 一种PECVD设备炉口进气结构,包括法兰,所述法兰的外侧壁上设置有多个外进气管,其特征在于,所述法兰的内侧壁上由上至下安装有多个内进气管,且每个内进气管分别沿着所述法兰的内侧壁的周向布置,每个内进气管的一端为进气端,另一端为封闭端,每个内进气管的进气端与一个外进气管的出气端连通,所述每个内进气管的管壁上沿该每个内进气管的周向均匀设有多个朝向所述法兰的中心的出气孔。
- 根据权利要求1所述的PECVD设备炉口进气结构,其特征在于,所述外进气管数量为两个,所述内进气管数量为两个,该两个内进气管分别沿着法兰的内侧壁的整个周向布置,该两个内进气管上的多个出气孔沿每个内进气管的整个周向均匀设置。
- 根据权利要求2所述的PECVD设备炉口进气结构,其特征在于,上、下相邻两个内进气管上的出气孔相互错开设置。
- 根据权利要求1或3所述的PECVD设备炉口进气结构,其特征在于,所述每个内进气管的进气端与一个外进气管的出气端可拆卸连接,所述法兰的内侧壁上设置有凹槽并沿着所述法兰的内侧壁的整个周向布置,所述多个内进气管可拆卸的安装于所述凹槽内。
- 根据权利要求4所述的PECVD设备炉口进气结构,其特征在于,所述每个内进气管的进气端与一个外进气管的出气端套接在一起。
- 根据权利要求5所述的PECVD设备炉口进气结构,其特征在于,所述每个内进气管的进气端与一个外进气管的出气端的套接叠合处设置有密封圈。
- 根据权利要求4所述的PECVD设备炉口进气结构,其特征在于,所述多个内进气管放置于所述凹槽内并用压块通过螺钉固定。
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CN109253973B (zh) * | 2018-06-28 | 2024-04-02 | 荧飒光学科技(上海)有限公司 | 用于气体光谱定性定量分析的气体池 |
CN112410758A (zh) * | 2019-08-21 | 2021-02-26 | 普乐新能源(蚌埠)有限公司 | Lpcvd和ald两用布气装置 |
CN112410757A (zh) * | 2019-08-21 | 2021-02-26 | 普乐新能源(蚌埠)有限公司 | 一种管式反应器的布气法兰 |
CN110565073A (zh) * | 2019-10-20 | 2019-12-13 | 湖南玉丰真空科学技术有限公司 | 化学气相沉积镀膜设备布气装置 |
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CN201785488U (zh) * | 2010-09-02 | 2011-04-06 | 无锡尚德太阳能电力有限公司 | 特气喷嘴及管式镀膜设备 |
CN203741411U (zh) * | 2013-12-19 | 2014-07-30 | 深圳市捷佳伟创新能源装备股份有限公司 | 一种pecvd进气结构 |
CN204490990U (zh) * | 2014-12-31 | 2015-07-22 | 深圳市捷佳伟创新能源装备股份有限公司 | 一种pecvd设备的炉门结构 |
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