WO2018196127A1 - 一种顶发射oled器件及制备方法、显示面板 - Google Patents

一种顶发射oled器件及制备方法、显示面板 Download PDF

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WO2018196127A1
WO2018196127A1 PCT/CN2017/088610 CN2017088610W WO2018196127A1 WO 2018196127 A1 WO2018196127 A1 WO 2018196127A1 CN 2017088610 W CN2017088610 W CN 2017088610W WO 2018196127 A1 WO2018196127 A1 WO 2018196127A1
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layer
conductivity
electrical
cathode
electrical enhancement
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PCT/CN2017/088610
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French (fr)
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张育楠
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深圳市华星光电技术有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

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  • the present invention relates to the field of display technologies, and in particular, to a top-emitting OLED device, a preparation method, and a display panel.
  • TFT Thin Film Transistor
  • a bottom-emitting OLED device has an anode layer on a substrate as a light-emitting surface, and since the TFT is disposed on the substrate, the aperture ratio is low. Therefore, in order to realize high-intensity large-area organic light emission, it is necessary to use a top-emitting OLED device to separate the light-emitting surface from the TFT to completely solve the problem of low aperture ratio.
  • the inventors of the present application found in the long-term research and development that in the preparation of the existing top-emitting OLED device, a total reflection anode layer and a semi-transparent cathode layer are generally used, but the top emission OLED device requires a cathode in order to ensure the translucent property of the cathode.
  • the thickness is about several tens of nanometers, which causes the conductivity of the cathode layer to be unsatisfactory, resulting in a large pressure drop in the center and edge regions of the large-sized OLED display panel, so that the brightness of the display panel is not uniform.
  • the technical problem to be solved by the present invention is to provide a top-emitting OLED device, a preparation method, and a display panel, which can enhance the conductivity of the cathode layer, reduce the voltage drop in the center and edge regions of the OLED display panel, and make the display of the OLED device more uniform. .
  • one technical solution adopted by the present invention is to provide a top-emitting OLED device, including:
  • a substrate an anode layer, an organic functional layer, a cathode layer and an electrical enhancement layer disposed in sequence, wherein the electrical conductivity and/or light transmittance of the electrical enhancement layer is higher than conductivity and/or light transmission of the cathode layer Sex.
  • another technical solution adopted by the present invention is to provide a method for preparing a top-emitting OLED device, including:
  • a display panel including:
  • a top-emitting OLED device comprising a substrate, an anode layer, an organic functional layer, a cathode layer and an electrical enhancement layer disposed in sequence, wherein the electrical conductivity and/or light transmittance of the electrical enhancement layer is higher than that of the cathode layer Sex and/or light transmission;
  • the driving circuit is coupled to the anode layer and/or the cathode layer for controlling the OLED device to emit light.
  • the invention increases the display of the OLED device by adding an electrical enhancement layer to the cathode layer of the top-emitting OLED device, enhancing the conductivity of the cathode layer, and reducing the voltage drop in the center and edge regions of the OLED display panel.
  • FIG. 1 is a schematic structural view of an embodiment of a top-emitting OLED device of the present invention
  • FIG. 2 is a schematic structural view of another embodiment of a top-emitting OLED device of the present invention.
  • FIG. 3 is a side elevational view of another embodiment of a top-emitting OLED device of the present invention.
  • FIG. 4 is a schematic flow chart of an embodiment of a method for fabricating a top-emitting OLED device of the present invention
  • FIG. 5 is a schematic structural view of an embodiment of a display panel of the present invention.
  • an embodiment of a top-emitting OLED device of the present invention includes:
  • the substrate 1, the anode layer 2, the organic functional layer 3, the cathode layer 4, and the electrical enhancement layer 5 are sequentially disposed, wherein the electrical conductivity and/or light transmittance of the electrical enhancement layer 5 is higher than that of the cathode layer 4 and/or Or light transmission.
  • the substrate 1 may be a transparent material such as glass or the like;
  • the anode layer 2 may be a material having good conductivity, such as silver or ITO (Indium) Tin Oxide, indium tin oxide, etc.;
  • the organic functional layer 3 may comprise a plurality of layers of a conductive material, such as an aqueous dispersion of PEDT/PSS (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)), PFO (poly 9,9-dioctylfluorene) or LiF (lithium fluoride), etc.
  • cathode layer 4 may be a light transmissive material, such as a thinner layer of magnesium or silver, etc.
  • electrical enhancement layer 5 may be transparent A material having good optical properties and good electrical conductivity, such as graphene, organic nanoparticles, metal nanoparticles or metal oxides.
  • the light generated by the organic functional layer 3 is emitted through the cathode layer 4, and the electrical enhancement layer 5 compensates for the thickness of the electrode of the entire cathode layer 4 by the compensation of the thickness, so that the voltage applied to the center and the edge of the OLED device The difference is reduced so that the intensity difference of the light generated by the organic functional layer 3 corresponding to the center and the edge of the OLED device becomes small; meanwhile, since the light transmittance of the electrical enhancement layer 5 is good, the light emitted from the cathode layer 4 does not Have an impact or have a smaller impact.
  • Embodiments of the present invention enhance the display of the OLED device by forming an electrical enhancement layer on the cathode layer of the top-emitting OLED device, enhancing the conductivity of the cathode layer, and reducing the voltage drop in the center and edge regions of the OLED display panel.
  • FIG. 2 and FIG. 3 another embodiment of the top-emitting OLED device of the present invention includes:
  • the substrate 10, the anode layer 20, the organic functional layer 30, the cathode layer 40, and the electrical enhancement layer 50 are sequentially disposed, wherein the electrical conductivity and/or light transmittance of the electrical enhancement layer 50 is higher than that of the cathode layer 40 and/or Or light transmission.
  • the electrical enhancement layer 50 may have a thickness of 1 nm to 200 nm, may be 50 nm, 100 nm, or 150 nm, and cover the cathode layer 40 over the entire surface.
  • the conductivity of the electrical enhancement layer 50 is higher than the conductivity of the cathode layer 40, and the light transmittance of the electrical enhancement layer 50 is higher than that of the cathode layer 40.
  • the organic functional layer 30 includes a hole injection layer 301, a light-emitting layer 302, and an electron injection layer 303, wherein the hole injection layer 301, the light-emitting layer 302, and the electron injection layer 303 are electrically connected in sequence, and the hole injection layer 301
  • the anode layer 20 is electrically connected
  • the electron injection layer 303 is electrically connected to the cathode layer 40.
  • the hole injection layer 301 may be a material that facilitates controlling the hole injection speed, such as PEDT/PSS, etc.
  • the light-emitting layer 302 may be a material having high luminous efficiency, such as PFO, etc.
  • the electron injection layer 303 may be convenient for controlling electrons.
  • a material for injecting speed such as LiF, etc.
  • the electrical enhancement layer 50 may be a material having good light transmittance and conductivity, such as graphene, organic nanoparticles, metal nanoparticles or metal oxides, wherein the organic nanoparticles may be The carbon nanotubes, the metal nanoparticles may be nano silver, and the metal oxide may be IZnO or IGaO.
  • the electrons of the cathode layer 40 and the holes of the anode layer 20 pass through the electron injection layer 303 and the hole injection layer 301 by the driving circuit, respectively, and then combine and emit light in the light-emitting layer 302.
  • Light passes through the cathode layer 40 and is emitted from the electrical enhancement layer 50. Since the light transmittance of the electrical enhancement layer 50 is higher than that of the cathode layer 40, the conductivity of the cathode layer 40 is enhanced without affecting the brightness of the light.
  • the electrical enhancement layer 50 may also be a material having conductivity higher than that of the cathode layer 40, and the light transmittance of the electrical enhancement layer 50 is not higher than that of the cathode layer 40; or the electrical enhancement layer 50 is further It may be a material whose conductivity is not higher than that of the cathode layer 40, and the light transmittance of the electric enhancement layer 50 is higher than that of the cathode layer 40.
  • Embodiments of the present invention enhance the display of the OLED device by forming an electrical enhancement layer on the cathode layer of the top-emitting OLED device, enhancing the conductivity of the cathode layer, and reducing the voltage drop in the center and edge regions of the OLED display panel.
  • an embodiment of a method for fabricating a top-emitting OLED device of the present invention includes:
  • the organic functional layer includes a hole injection layer, a light emitting layer, and an electron injection layer.
  • an ITO film is formed on the substrate by magnetron sputtering as an anode layer of the OLED device, wherein the ITO film has a thickness of 20 nm to 200 nm, which may be 50 nm, 100 nm or 150 nm; or vacuum evaporation on the substrate
  • a silver film as an anode layer of the OLED device, wherein the silver film has a thickness of 10 nm to 100 nm, and may be 30 nm, 50 nm or 80 nm;
  • a PEDT/PSS film is formed on the anode layer by inkjet printing as a hole injection layer of the OLED device, wherein the PEDT/PSS film has a thickness of 1 nm to 100 nm, and may be 20 nm, 50 nm or 80 nm;
  • a PFO film is formed on the hole injection layer by inkjet printing, as a blue light emitting layer of the OLED device, wherein the PFO film has a thickness of 1 nm to 100 nm, which may be 20 nm, 50 nm or 80 nm;
  • a LiF (lithium fluoride) film is formed on the light-emitting layer by evaporation, as an electron injection layer of the OLED device, wherein the LiF film has a thickness of 0.5 nm to 10 nm, which may be 1 nm, 5 nm or 8 nm;
  • a silver or magnesium film is formed on the electron injecting layer by vapor deposition as a cathode layer of the OLED device, wherein the silver or magnesium film has a thickness of 10 nm to 200 nm, and may be 50 nm, 100 nm or 150 nm.
  • the anode layer, the hole injection layer, the light-emitting layer, the electron injection layer, and the cathode layer may also pass other materials such as aluminum, CuPc (copper phthalocyanine), and Alq3 (tris(8-hydroxyquinoline) aluminum). Film formation by evaporation, printing, or the like.
  • PECVD Plasma enhanced Chemical Vapor
  • the cathode layer Deposition forms a graphene film as an electrical enhancement layer of an OLED device, wherein the graphene film has a thickness of 1 nm to 200 nm and may be 50 nm, 100 nm or 150 nm.
  • the electrical enhancement layer may also be made of organic nanoparticles, metal nanoparticles or metal oxides, wherein the organic nanoparticles may be carbon nanotubes, the metal nanoparticles may be nano silver, and the metal oxide may be IZnO or IGaO
  • the electrical enhancement layer can also be prepared by evaporation, printing, or the like.
  • Embodiments of the present invention enhance the display of the OLED device by forming an electrical enhancement layer on the cathode layer of the top-emitting OLED device, enhancing the conductivity of the cathode layer, and reducing the voltage drop in the center and edge regions of the OLED display panel.
  • an embodiment of a display panel of the present invention includes:
  • the top emission OLED device 401 includes a substrate, an anode layer, an organic functional layer, a cathode layer and an electrical enhancement layer disposed in sequence, wherein the electrical conductivity and/or light transmittance of the electrical enhancement layer is higher than the conductivity of the cathode layer and/or Or light transmissive;
  • the driving circuit 402 is coupled to the anode layer and/or the cathode layer for controlling the OLED device to emit light.
  • top-emitting OLED device 401 is described in the above-described top-emitting OLED device embodiment.
  • Embodiments of the present invention enhance the display of the OLED device by forming an electrical enhancement layer on the cathode layer of the top-emitting OLED device, enhancing the conductivity of the cathode layer, and reducing the voltage drop in the center and edge regions of the OLED display panel.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种顶发射OLED器件及制备方法、显示面板，顶发射OLED器件包括依次设置的基板（1）、阳极层（2）、有机功能层（3）、阴极层（4）和电学增强层（5），其中，电学增强层的材料导电性和/或透光性高于阴极层的导电性和/或透光层。通过在顶发射OLED器件的阴极层增加电学增强层，增强阴极层的导电性，减小OLED显示面板中心和边缘区域的压降，使OLED器件的显示更加均匀。

Description

一种顶发射OLED器件及制备方法、显示面板
【技术领域】
本发明涉及显示技术领域，特别涉及一种顶发射OLED器件及制备方法、显示面板。
【背景技术】
随着小面积、无源驱动技术的日趋成熟，人们开始转而研究大面积、有缘驱动技术。大尺寸显示一般采用TFT（Thin Film Transistor，薄膜晶体管），其中，底发射OLED器件以基板上的阳极层作为出光面，由于TFT设置在基板上，造成开口率低。因此，要实现高亮度的大面积有机发光，需要使用顶发射OLED器件，将出光面与TFT分开，彻底解决开口率低的问题。
本申请的发明人在长期的研发中发现，现有的顶发射OLED器件制备中，一般采用全反射阳极层和半透明阴极层，但是顶发射OLED器件为了保证阴极的半透明性质，要求阴极的厚度在几十纳米左右，导致阴极层的导电性无法保证，造成大尺寸的OLED显示面板中心和边缘区域存在较大的压降，使显示面板发光的亮度不均匀。
【发明内容】
本发明主要解决的技术问题是提供一种顶发射OLED器件及制备方法、显示面板，能够增强阴极层的导电性，减小OLED显示面板中心和边缘区域的压降，使OLED器件的显示更加均匀。
为解决上述技术问题，本发明采用的一个技术方案是提供一种顶发射OLED器件，包括：
依次设置的基板、阳极层、有机功能层、阴极层和电学增强层，其中，所述电学增强层的材料导电性和/或透光性高于所述阴极层的导电性和/或透光性。
为解决上述技术问题，本发明采用的另一个技术方案是提供一种顶发射OLED器件的制备方法，包括：
S1、在基板上依次制备阳极层、有机功能层和阴极层；
S2、在所述阴极层上形成电学增强层，其中，所述电学增强层的材料导电性和/或透光性高于所述阴极层的导电性和/或透光性。
为解决上述技术问题，本发明采用的另一个技术方案是提供一种显示面板，包括：
顶发射OLED器件，包括依次设置的基板、阳极层、有机功能层、阴极层和电学增强层，其中，所述电学增强层的材料导电性和/或透光性高于所述阴极层的导电性和/或透光性；
驱动电路，耦接所述阳极层和/或阴极层，用于控制所述OLED器件发光。
本发明通过在顶发射OLED器件的阴极层增加电学增强层，增强阴极层的导电性，减小OLED显示面板中心和边缘区域的压降，使OLED器件的显示更加均匀。
【附图说明】
图1是本发明顶发射OLED器件一实施例的结构示意图；
图2是本发明顶发射OLED器件另一实施例的结构示意图；
图3是本发明顶发射OLED器件另一实施例的侧视示意图；
图4是本发明顶发射OLED器件的制备方法实施例的流程示意图；
图5是本发明显示面板实施例的结构示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。
参见图1，本发明顶发射OLED器件一实施例包括：
依次设置的基板1、阳极层2、有机功能层3、阴极层4和电学增强层5，其中，电学增强层5的材料导电性和/或透光性高于阴极层4的导电性和/或透光性。
可选地，基板1可以是透明材料，例如玻璃等；阳极层2可以是导电性较好的材料，例如银或ITO（Indium Tin Oxide，氧化铟锡）等；有机功能层3可以包括多层导电材料，例如PEDT/PSS（聚（3，4-乙烯基二氧噻吩）聚（苯乙烯磺酸盐）的水性分散体）、PFO（聚9,9-二辛基芴）或LiF（氟化锂）等；阴极层4可以是透光较好的材料，例如较薄的镁或银层等；电学增强层5可以是透光性较好并且导电性较好的材料，例如石墨烯、有机纳米粒子、金属纳米颗粒或金属氧化物等。
在外界驱动下，有机功能层3产生的光穿过阴极层4射出，电学增强层5通过厚度的弥补，减小整个阴极层4电极的方块电阻，使加载在OLED器件的中心和边缘的电压的差减小，从而使有机功能层3对应OLED器件的中心和边缘产生的光的强度差变小；同时，由于电学增强层5的透光性较好，对阴极层4射出的光不会产生影响或者产生较小的影响。
本发明实施例通过在顶发射OLED器件的阴极层形成电学增强层，增强阴极层的导电性，减小OLED显示面板中心和边缘区域的压降，使OLED器件的显示更加均匀。
参见图2和图3，本发明顶发射OLED器件另一实施例包括：
依次设置的基板10、阳极层20、有机功能层30、阴极层40和电学增强层50，其中，电学增强层50的材料导电性和/或透光性高于阴极层40的导电性和/或透光性。
可选地，电学增强层50的厚度为1nm～200nm，可以是50nm、100nm或150nm，并且整面覆盖阴极层40。
可选地，电学增强层50的导电性高于阴极层40的导电性，且电学增强层50的透光性高于阴极层40的透光性。
可选地，有机功能层30包括空穴注入层301、发光层302和电子注入层303，其中，空穴注入层301、发光层302和电子注入层303依次电性连接，空穴注入层301与阳极层20电性连接，电子注入层303与阴极层40电性连接。
可选地，空穴注入层301可以是便于控制空穴注入速度的材料，例如PEDT/PSS等；发光层302可以是发光效率高的材料，例如PFO等；电子注入层303可以是便于控制电子注入速度的材料，例如LiF等；电学增强层50可以是透光性和导电性都较好的材料，例如石墨烯、有机纳米粒子、金属纳米颗粒或金属氧化物，其中，有机纳米粒子可以是碳纳米管，金属纳米颗粒可以是纳米银，金属氧化物可以是IZnO或IGaO。
具体的，阴极层40的电子和阳极层20的空穴在驱动电路的作用下，分别通过电子注入层303和空穴注入层301后，在发光层302结合并发光。光经过阴极层40，从电学增强层50射出，由于电学增强层50的透光性高于阴极层40的透光性，在增强阴极层40导电性的同时不会影响光的亮度。
可选地，电学增强层50还可以是导电性高于阴极层40的导电性，且电学增强层50的透光性不高于阴极层40的透光性的材料；或者电学增强层50还可以是导电性不高于阴极层40的导电性，且电学增强层50的透光性高于阴极层40的透光性的材料。
本发明实施例通过在顶发射OLED器件的阴极层形成电学增强层，增强阴极层的导电性，减小OLED显示面板中心和边缘区域的压降，使OLED器件的显示更加均匀。
参见图4，本发明顶发射OLED器件的制备方法实施例包括：
S1、在基板上依次制备阳极层、有机功能层和阴极层；
可选地，有机功能层包括空穴注入层、发光层和电子注入层。
可选地，在基板上通过磁控溅射形成ITO膜，作为OLED器件的阳极层，其中，ITO膜的厚度为20nm～200nm，可以是50nm、100nm或150nm；或者在基板上通过真空蒸镀形成银膜，作为OLED器件的阳极层，其中，银膜的厚度为10nm～100nm，可以是30nm、50nm或80nm；
可选地，在阳极层上通过喷墨打印形成PEDT/PSS膜，作为OLED器件的空穴注入层，其中，PEDT/PSS膜的厚度为1nm～100nm，可以是20nm、50nm或80nm；
可选地，在空穴注入层上通过喷墨打印形成PFO膜，作为OLED器件的蓝色发光层，其中，PFO膜的厚度为1nm～100nm，可以是20nm、50nm或80nm；
可选地，在发光层上通过蒸镀形成LiF（氟化锂）膜，作为OLED器件的电子注入层，其中，LiF膜的厚度为0.5nm～10nm，可以是1nm、5nm或8nm；
可选地，在电子注入层上通过蒸镀形成银或镁膜，作为OLED器件的阴极层，其中，银或镁膜的厚度为10nm～200nm，可以是50nm、100nm或150nm。
可选地，阳极层、空穴注入层、发光层、电子注入层和阴极层还可以利用铝、CuPc（酞菁铜）、Alq3（三(8-羟基喹啉)铝）等其他材料，通过蒸镀、打印等其他方式成膜。
S2、在阴极层上形成电学增强层，其中，电学增强层的材料导电性和/或透光性高于阴极层的导电性和/或透光性。
可选地，在阴极层上通过PECVD（Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学气相沉积法）形成石墨烯膜，作为OLED器件的电学增强层，其中，石墨烯膜的厚度为1nm～200nm，可以是50nm、100nm或150nm。
可选地，电学增强层还可以由有机纳米粒子、金属纳米颗粒或金属氧化物制成，其中有机纳米粒子可以是碳纳米管，金属纳米颗粒可以是纳米银，金属氧化物可以是IZnO或IGaO；电学增强层还可以通过蒸镀、打印等方法制备。
本发明实施例通过在顶发射OLED器件的阴极层形成电学增强层，增强阴极层的导电性，减小OLED显示面板中心和边缘区域的压降，使OLED器件的显示更加均匀。
参见图5，本发明显示面板实施例包括：
顶发射OLED器件401，包括依次设置的基板、阳极层、有机功能层、阴极层和电学增强层，其中，电学增强层的材料导电性和/或透光性高于阴极层的导电性和/或透光性；
驱动电路402，耦接阳极层和/或阴极层，用于控制OLED器件发光。
具体的，顶发射OLED器件401的结构参见上述顶发射OLED器件实施例。
本发明实施例通过在顶发射OLED器件的阴极层形成电学增强层，增强阴极层的导电性，减小OLED显示面板中心和边缘区域的压降，使OLED器件的显示更加均匀。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (17)

  1. 一种显示面板，其中，包括：
    顶发射OLED器件，包括依次设置的基板、阳极层、有机功能层、阴极层和整面覆盖所述阴极层的电学增强层，其中，所述电学增强层的材料导电性和/或透光性高于所述阴极层的导电性和/或透光性；
    驱动电路，耦接所述阳极层和/或阴极层，用于控制所述OLED器件发光；
    其中，所述电学增强层的材料为石墨烯、有机纳米粒子、金属纳米颗粒或金属氧化物。
  2. 根据权利要求1所述的显示面板，其中，
    所述电学增强层的导电性高于所述阴极层的导电性，且所述电学增强层的透光性高于所述阴极层的透光性；
    所述电学增强层的导电性高于所述阴极层的导电性，且所述电学增强层的透光性不高于所述阴极层的透光性；
    所述电学增强层的导电性不高于所述阴极层的导电性，且所述电学增强层的透光性高于所述阴极层的透光性。
  3. 根据权利要求1所述的显示面板，其中，
    所述电学增强层的厚度为1nm～200nm。
  4. 根据权利要求1所述的显示面板，其中，
    所述有机纳米粒子为碳纳米管，所述金属纳米颗粒为纳米银，所述金属氧化物为IZnO或IGaO。
  5. 根据权利要求1所述的显示面板，其中，
    所述有机功能层包括空穴注入层、发光层和电子注入层，其中，所述空穴注入层、发光层和电子注入层依次电性连接，所述空穴注入层与所述阳极层电性连接，所述电子注入层与所述阴极层电性连接。
  6. 一种顶发射OLED器件，其中，包括：
    依次设置的基板、阳极层、有机功能层、阴极层和电学增强层，其中，所述电学增强层的材料导电性和/或透光性高于所述阴极层的导电性和/或透光性。
  7. 根据权利要求6所述的OLED器件，其中，
    所述电学增强层的导电性高于所述阴极层的导电性，且所述电学增强层的透光性高于所述阴极层的透光性；
    所述电学增强层的导电性高于所述阴极层的导电性，且所述电学增强层的透光性不高于所述阴极层的透光性；
    所述电学增强层的导电性不高于所述阴极层的导电性，且所述电学增强层的透光性高于所述阴极层的透光性。
  8. 根据权利要求6所述的OLED器件，其中，
    所述电学增强层整面覆盖所述阴极层。
  9. 根据权利要求8所述的OLED器件，其中，
    所述电学增强层的厚度为1nm～200nm。
  10. 根据权利要求6所述的OLED器件，其中，
    所述电学增强层的材料为石墨烯、有机纳米粒子、金属纳米颗粒或金属氧化物。
  11. 根据权利要求10所述的OLED器件，其中，
    所述有机纳米粒子为碳纳米管，所述金属纳米颗粒为纳米银，所述金属氧化物为IZnO或IGaO。
  12. 根据权利要求6所述的OLED器件，其中，
    所述有机功能层包括空穴注入层、发光层和电子注入层，其中，所述空穴注入层、发光层和电子注入层依次电性连接，所述空穴注入层与所述阳极层电性连接，所述电子注入层与所述阴极层电性连接。
  13. 一种顶发射OLED器件的制备方法，其中，包括：
    S1、在基板上依次制备阳极层、有机功能层和阴极层；
    S2、在所述阴极层上形成电学增强层，其中，所述电学增强层的材料导电性和/或透光性高于所述阴极层的导电性和/或透光性。
  14. 根据权利要求13所述的方法，其中，
    所述电学增强层的导电性高于所述阴极层的导电性，且所述电学增强层的透光性高于所述阴极层的透光性；
    所述电学增强层的导电性高于所述阴极层的导电性，且所述电学增强层的透光性不高于所述阴极层的透光性；
    所述电学增强层的导电性不高于所述阴极层的导电性，且所述电学增强层的透光性高于所述阴极层的透光性。
  15. 根据权利要求13所述的方法，其中，
    所述在所述阴极层上形成电学增强层的方法具体包括：
    通过化学气相沉积法在所述阴极层的整面覆盖所述电学增强层。
  16. 根据权利要求15所述的方法，其中，
    所述电学增强层的厚度为1nm～200nm。
  17. 根据权利要求13所述的方法，其中，
    所述电学增强层的材料为石墨烯、有机纳米粒子、金属纳米颗粒或金属氧化物。
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