WO2018196113A1 - 蒸镀装置 - Google Patents

蒸镀装置 Download PDF

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Publication number
WO2018196113A1
WO2018196113A1 PCT/CN2017/087788 CN2017087788W WO2018196113A1 WO 2018196113 A1 WO2018196113 A1 WO 2018196113A1 CN 2017087788 W CN2017087788 W CN 2017087788W WO 2018196113 A1 WO2018196113 A1 WO 2018196113A1
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WO
WIPO (PCT)
Prior art keywords
pipe
evaporation
vapor deposition
vapor pressure
duct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/087788
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English (en)
French (fr)
Inventor
沐俊应
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US15/566,905 priority Critical patent/US20180312965A1/en
Publication of WO2018196113A1 publication Critical patent/WO2018196113A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase

Definitions

  • the present invention relates to the field of liquid crystal panel manufacturing, and in particular to an evaporation apparatus.
  • OLED Organic Light-Emitting Diode
  • advantages such as high contrast, wide color gamut, flexibility, thinness and energy saving.
  • OLED display technology has gradually spread in the fields of mobile devices such as smart phones and tablet computers, flexible wearable devices such as smart watches, large-scale curved TVs, and white light illumination, and the development momentum is strong.
  • OLED technology mainly includes small molecule OLED technology based on vacuum evaporation technology and polymer OLED technology based on solution process.
  • the vapor deposition machine is the main equipment for the production of small-molecule OLED devices that have been mass-produced.
  • the core part of the equipment is a vapor deposition device, which is divided into a point evaporation source, a line evaporation source, and a surface evaporation source.
  • the line evaporation source is currently an important OLED mass production technology, and is mainly divided into an integrated line evaporation source and a conveyor line evaporation source.
  • the temperature of each part of the evaporation source needs to maintain a mode equivalent to that of the normal coating, so that the evaporation gas continues to be directed to the outside, resulting in a large material loss and a decrease in material utilization.
  • the invention provides an evaporation device comprising:
  • the transmission pipe includes a first pipe, a second pipe, and a third pipe;
  • One end of the first pipe is in communication with the evaporation chamber of the evaporation portion, and the first pipe is provided with a first temperature control component for maintaining a constant temperature in the first pipe;
  • One end of the second pipe is in communication with the evaporation chamber of the vapor deposition portion, and the second pipe is provided with a second temperature control component for maintaining a constant temperature in the second pipe;
  • a third pipe is used to connect the other end of the first pipe and the other end of the second pipe; the third pipe is provided with a vapor pressure control component for controlling the third when switching from evaporation to idle The vapor pressure of the vaporized gas in the pipe is lowered, and the vapor pressure of the vaporized gas in the third pipe is controlled to change from idle to vapor deposition.
  • the vapor pressure control assembly includes a controller, a refrigeration member, and a heating member, the controller being electrically connected to the refrigeration member and the heating member;
  • the controller controls the refrigeration member to lower the temperature in the third conduit to reduce the vapor pressure of the vaporized gas in the third conduit from the current first vapor pressure value to the second vapor pressure value;
  • the controller controls the heating element to raise the temperature in the third pipe to raise the vapor pressure of the evaporated gas in the third pipe from the second vapor pressure value to the first vapor pressure value.
  • the heating member is coated on an outer wall of the third duct, and the refrigerating member covers the heating member.
  • an insulating layer is disposed between the cooling member and the heating member.
  • the heating element is a heating wire wound around a third conduit.
  • the refrigeration member includes an outer sleeve and a refrigerant; the outer sleeve is sleeved outside the insulation layer, and an inner wall of the outer sleeve forms a gap with an outer wall of the insulation layer to accommodate a refrigerant .
  • the outer sleeve is provided with an inflow port for the refrigerant to flow in, and an outflow port for the refrigerant to flow out.
  • a flow valve is disposed within the outer casing for controlling the flow of refrigerant within the outer casing.
  • first conduit, the second conduit, and the third conduit are coaxially disposed and each have a circular tubular shape; wherein the passage of the third conduit is smaller than the passage of the first conduit and the second conduit.
  • the vapor deposition portion has a wall body provided with an injection port communicating with the evaporation chamber for ejecting the evaporation gas in the evaporation chamber onto the substrate.
  • the invention also provides another evaporation device comprising:
  • the transmission pipe includes a first pipe, a second pipe, and a third pipe;
  • One end of the first pipe is in communication with the evaporation chamber of the evaporation portion, and the first pipe is provided with a first temperature control component for maintaining a constant temperature in the first pipe;
  • One end of the second pipe is in communication with the evaporation chamber of the vapor deposition portion, and the second pipe is provided with a second temperature control component for maintaining a constant temperature in the second pipe;
  • a third conduit is configured to communicate the other end of the first conduit and the other end of the second conduit;
  • the third conduit is provided with a vapor pressure control assembly including a controller, a refrigeration member, and a heating member, The controller is electrically connected to the cooling member and the heating member, the heating member is coated on the outer wall of the third pipe, and the cooling member covers the heating member;
  • the controller controls the refrigeration member to lower the temperature in the third conduit to reduce the vapor pressure of the vaporized gas in the third conduit from the current first vapor pressure value to the second vapor pressure value.
  • the controller controls the heating element to raise the temperature in the third pipe to raise the vapor pressure of the boil-off gas in the third pipe from the second vapor pressure value to the first vapor pressure. value.
  • an insulating layer is disposed between the cooling member and the heating member.
  • the heating element is a heating wire wound around a third conduit.
  • the refrigeration member includes an outer sleeve and a refrigerant; the outer sleeve is sleeved outside the insulation layer, and an inner wall of the outer sleeve forms a gap with an outer wall of the insulation layer to accommodate a refrigerant .
  • the outer sleeve is provided with an inflow port for the refrigerant to flow in, and an outflow port for the refrigerant to flow out.
  • a flow valve is disposed within the outer casing for controlling the flow of refrigerant within the outer casing.
  • first conduit, the second conduit, and the third conduit are coaxially disposed and each have a circular tubular shape; wherein the passage of the third conduit is smaller than the passage of the first conduit and the second conduit.
  • the vapor deposition portion has a wall body on which an ejection port communicating with the evaporation chamber is provided for ejecting the evaporation gas in the evaporation chamber onto the substrate.
  • the injection port is circular in shape.
  • a crucible for containing the vapor deposition material is disposed within the evaporation chamber of the evaporation portion.
  • the vapor deposition device of the present invention includes an evaporation portion, a transfer pipe, and a vapor deposition portion; the evaporation portion is configured to heat and evaporate the vapor deposition material to form an evaporation gas in the evaporation chamber thereof;
  • the pipeline is configured to transport the evaporation gas formed in the evaporation chamber to the evaporation chamber of the evaporation portion; the evaporation portion is configured to evaporate the evaporation gas contained in the evaporation chamber onto the substrate;
  • the transmission pipeline includes the first pipeline a second pipe and a third pipe; one end of the first pipe is in communication with the evaporation chamber of the evaporation portion, and the first pipe is provided with a first temperature control component for maintaining a constant temperature in the first pipe; One end is in communication with the evaporation chamber of the evaporation portion, the second conduit is provided with a second temperature control component for maintaining a constant temperature in the second conduit; and the third conduit is for
  • the solution is provided with a vapor pressure control component on the transmission pipeline, and controls the vapor pressure of the evaporation gas in the third pipeline to decrease when the evaporation is switched to idle, so as to slow down the evaporation rate of the evaporation material, so that the evaporation amount of the evaporation material is reduced when idle. , thereby reducing the loss of evaporation materials and improving material utilization.
  • Figure 1 is a first perspective view of a vapor deposition apparatus in a preferred embodiment of the present invention.
  • FIG. 2 is a second perspective view of a vapor deposition apparatus in a preferred embodiment of the present invention.
  • Figure 3 is a cross-sectional view of the vapor deposition apparatus of Figure 2 taken along line P1-P1.
  • FIG. 4 is a partial perspective structural view of the vapor deposition device shown in FIG. 2.
  • Figure 5 is a cross-sectional view of the partial three-dimensional structure shown in Figure 4 taken along line P2-P2.
  • Figure 6 is another cross-sectional view of the partial three-dimensional structure shown in Figure 4 taken along line P2-P2.
  • Figure 7 is still another cross-sectional view of the partial three-dimensional structure shown in Figure 4 along line P2-P2.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • a plurality means two or more unless otherwise stated.
  • the term “comprises” and its variations are intended to cover a non-exclusive inclusion.
  • the vapor deposition apparatus of the preferred embodiment includes an evaporation portion 10, a transfer pipe 20, and a vapor deposition portion 30.
  • the evaporation portion 10 is for heating and evaporating the vapor deposition material to form an evaporation gas in the evaporation chamber 11.
  • the transfer pipe 20 is for conveying the evaporated gas formed in the evaporation chamber 11 into the vapor deposition chamber 31 of the vapor deposition portion 30.
  • the vapor deposition unit 30 is for vapor-depositing the evaporation gas contained in the vapor deposition chamber 31 onto the substrate.
  • the evaporation chamber 11 of the evaporation portion 10 may be provided with a crucible for containing a vapor deposition material, and a heating wire may be placed in the crucible to evaporate the evaporation material to form an evaporation gas.
  • the evaporated material is in a crystalline state.
  • the vapor deposition portion 30 has a wall body 32 on which an ejection port 40 communicating with the vapor deposition chamber 31 is provided for ejecting the evaporation gas in the vapor deposition chamber 31 onto the substrate.
  • the injection port 40 may be a single-core tubular tube. In practical applications, the injection port 40 can also be a slit disposed along the wall 32.
  • the transmission duct 20 includes a first duct 21, a third duct 23, and a second duct 22 that are sequentially connected.
  • the first duct 21, the second duct 22, and the third duct 23 may be coaxially disposed and each have a circular tubular shape.
  • the passage of the third duct 23 is smaller than the passage of the first duct 21 and the second duct 22.
  • the passage of the third duct 23 can be designed as a narrow area with a small heat capacity.
  • one end of the first duct 21 is in communication with the evaporation chamber 11 of the evaporation portion 10, and the first duct 21 is provided with a first temperature control assembly 60 for holding the inside of the first duct 21.
  • the temperature is constant.
  • One end of the second duct 22 is in communication with the vapor deposition chamber 31 of the vapor deposition section 30, and the second duct 22 is provided with a second temperature control unit 70 for maintaining the temperature in the second duct constant.
  • the first temperature control component 60 and the second temperature control component 70 may include heating, cooling devices, temperature monitoring devices, etc., and the temperature of each part is precisely controlled by the temperature control system.
  • an independent heating, cooling device, and temperature monitoring device may be provided on the evaporation portion 10 and the vapor deposition portion 30.
  • the third duct 23 is for communicating the other end of the first duct 21 and the other end of the second duct 22.
  • the third pipe 23 is provided with a vapor pressure control unit 50 for controlling the vapor pressure of the vaporized gas in the third pipe 23 to be lowered when switching from vapor deposition to being idle; when switching from idle to vapor deposition The vapor pressure of the vaporized gas in the third conduit 23 is controlled to rise.
  • the vapor pressure control assembly 50 can be arranged in various ways.
  • the vapor pressure control assembly 50 may be disposed to cover the outer wall surface of the third conduit 23.
  • the vapor pressure control assembly 50 can include a controller, a refrigeration component 51 , and a heating element 52 .
  • the controller is electrically connected to the cooling member 51 and the heating element 52.
  • the controller can be set to the corresponding position according to the actual situation.
  • the controller controls the refrigeration unit 51 to lower the temperature in the third conduit 23 to reduce the vapor pressure of the vaporized gas in the third conduit 23 from the current first vapor pressure to the first Two vapor pressure values.
  • the controller controls the heating element 52 to raise the temperature in the third conduit 23 to raise the vapor pressure of the boil-off gas in the third conduit from the second vapor pressure to the first steam. Pressure value.
  • the heating element 52 overlies the outer wall of the third conduit 23, and the refrigeration element 51 encases the heating element 52.
  • the heating element 52 can be a heating wire wound around the third pipe 23.
  • an insulating layer 53 may be disposed between the cooling member 51 and the heating member 52.
  • the refrigeration member 51 can include an outer casing 511 and a refrigerant 512.
  • the outer sleeve 511 is sleeved outside the heat insulating layer 53, and the inner wall of the outer sleeve 511 forms a gap with the outer wall of the heat insulating layer 53 to accommodate the refrigerant.
  • the refrigerant 512 may be water, Freon or the like.
  • the outer sleeve 511 may be provided with an inflow port 5111 into which the refrigerant 512 flows, and an outflow port 5112 through which the refrigerant flows.
  • a flow valve 5113 is provided in the outer sleeve 511 for controlling the flow rate of the refrigerant in the outer sleeve 511.
  • vapor pressure control is performed in the vapor pressure control zone (ie, in the third conduit 23):
  • the controller controls the heating member 52 to reduce the heating capacity, while controlling the refrigerant member 51 to increase the flow rate of the coolant 512 to enhance the cooling capacity of the refrigerant member 51 to reduce the evaporation gas passing through the third conduit 23.
  • the vapor pressure It is also ensured that the temperature in the third conduit 23 is maintained within a temperature range in which the vaporized gas cannot be deposited to control the overall evaporation rate of the evaporation material, thereby reducing the rate at which the vapor deposition material in the evaporation portion is transported to the vapor deposition portion 30.
  • the evaporation rate of the evaporation material after the material vapor passes through the vapor pressure control zone is monitored in real time by the rate monitoring device, and the evaporation rate is lowered to a lower level.
  • the rate monitoring device For example, you can use QCM (Quartz Crystal Microbalance, the British crystal microbalance, detects changes in the mass of the evaporated material to calculate the evaporation rate for real-time monitoring.
  • QCM Quadrat Crystal Microbalance, the British crystal microbalance
  • the first duct 21, the second duct 22, and the vapor deposition section 30 maintain a constant temperature control mode
  • the evaporation section is switched to the constant temperature control mode
  • the temperature in the third duct 23 is lowered to form a temperature gradient.
  • the temperature in the third pipe 23 is the lowest
  • the temperature in the first pipe 21 is higher than the temperature in the evaporation portion 10
  • the temperature in the second pipe 22 is not higher than the temperature in the vapor deposition portion 30.
  • the temperature in the first pipe 21 and the second pipe 22 is higher than the temperature in the vapor deposition to ensure that the low temperature in the third pipe 23 does not affect the temperature in the vapor deposition portion 30 and the evaporation portion 10.
  • PID Proportion-Integral-Derivative
  • the vapor pressure control mode needs to be released to implement the recovery of the constant evaporation rate control mode of the evaporation source device:
  • the controller controls the heating member 52 to increase the heating capacity while controlling the termination of the refrigerant member 51 to increase the coolant to raise the vapor pressure of the boil-off gas passing through the third conduit 23. Since it takes a certain time for the vapor pressure to rise, the heating means in the evaporation portion 10 is controlled to raise the temperature of the evaporation chamber 11 before the normal vapor pressure value is reached. After the temperature of each zone is precisely controlled by the PID control system, and the evaporation rate is quickly restored to the original normal level, the coating can be started.
  • the vapor deposition device includes an evaporation portion, a transmission pipe and a vapor deposition portion; the evaporation portion is used for heating and evaporating the evaporation material to form an evaporation gas in the evaporation chamber thereof; And evaporating gas formed in the evaporation chamber is transferred to the vapor deposition chamber of the vapor deposition portion; the vapor deposition portion is configured to evaporate the evaporation gas contained in the vapor deposition chamber onto the substrate; the transmission pipeline includes a first pipeline, a second pipe and a third pipe; one end of the first pipe is in communication with the evaporation chamber of the evaporation portion, and the first pipe is provided with a first temperature control component for maintaining a constant temperature in the first pipe; The vapor deposition chamber of the evaporation portion is in communication, the second conduit is provided with a second temperature control component for maintaining a constant temperature in the second conduit; and the third conduit is for the other end of the first
  • the solution is provided with a vapor pressure control component on the transmission pipeline, and controls the vapor pressure of the evaporation gas in the third pipeline to decrease when the evaporation is switched to idle, so as to slow down the evaporation rate of the evaporation material, so that the evaporation amount of the evaporation material is reduced when idle. , thereby reducing the loss of evaporation materials and improving material utilization.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种蒸镀装置，包括蒸发部(10)、传输管道(20)以及蒸镀部(30)；蒸发部(10)用于对蒸镀材料进行加热蒸发，以在其蒸发腔(11)内形成蒸发气体；传输管道(20)用于将该蒸发腔(11)中形成的蒸发气体传输到蒸镀部(30)的蒸镀腔(31)；蒸镀部(30)用于将其蒸镀腔(31)内收容的蒸发气体蒸镀到基板上；该传输管道(20)包括第一管道(21)、第二管道(22)以及第三管道(23)；第一管道(21)的一端与蒸发部(10)的蒸发腔(11)连通，第一管道(21)上设置有第一温控组件(60)，以用于保持第一管道(21)内的温度恒定；第二管道(22)的一端与蒸镀部(30)的蒸镀腔(31)连通，第二管道(22)上设置有第二温控组件(70)，用于保持第二管道(22)内的温度恒定；第三管道(23)用于将第一管道(21)的另一端以及第二管道(22)的另一端连通；第三管道(23)上设置有蒸汽压控制组件(50)，该蒸汽压控制组件(50)用于在由蒸镀切换为闲置时控制第三管道(23)内蒸发气体的蒸汽压降低，由闲置切换为蒸镀时控制第三管道(23)内蒸发气体的蒸汽压升高。

Description

蒸镀装置 技术领域
本发明涉及液晶面板制作领域，特别是涉及一种蒸镀装置。
 背景技术
在信息社会的当代，作为可视信息传输媒介的显示器的重要性在进一步加强，为了在未来占据主导地位，显示器正朝着更轻、更薄、更低能耗、更低成本以及更好图像质量的趋势发展。
OLED（OrganicLight-EmittingDiode，有机发光二极管）显示技术较之当前主流的液晶显示技术，具有对比度高、色域广、柔性、轻薄、节能等突出优点。近年来OLED显示技术逐渐在智能手机和平板电脑等移动设备、智能手表等柔性可穿戴设备、大尺寸曲面电视、白光照明等领域普及，发展势头强劲。
OLED技术主要包括以真空蒸镀技术为基础的小分子OLED技术和以溶液制程为基础的高分子OLED技术。蒸镀机是当前已量产的小分子OLED器件生产的主要设备，其设备核心部分为蒸镀装置，分为点蒸发源、线蒸发源、面蒸发源等。线蒸发源为当前重要的OLED量产技术，主要分为一体式线蒸发源和输送式线蒸发源。
当蒸发源处于闲置模式时，蒸发源各个部分的温度需保持与正常镀膜时相当的模式，使得蒸发气体仍然继续导向外界，导致材料损耗较大，材料利用率下降。
因此，现有技术存在缺陷，急需改进。
 技术问题
本发明的目的在于提供一种改进的蒸镀装置。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种蒸镀装置，包括：
蒸发部、传输管道以及蒸镀部；蒸发部用于对蒸镀材料进行加热蒸发，以在其蒸发腔内形成蒸发气体；传输管道用于将该蒸发腔中形成的蒸发气体传输到蒸镀部的蒸镀腔；蒸镀部用于将其蒸镀腔内收容的蒸发气体蒸镀到基板上；
该传输管道包括第一管道、第二管道以及第三管道；
第一管道的一端与蒸发部的蒸发腔连通，第一管道上设置有第一温控组件，以用于保持第一管道内的温度恒定；
第二管道的一端与蒸镀部的蒸镀腔连通，第二管道上设置有第二温控组件，用于保持第二管道内的温度恒定；
第三管道用于将第一管道的另一端以及第二管道的另一端连通；第三管道上设置有蒸汽压控制组件，该蒸汽压控制组件用于在由蒸镀切换为闲置时控制第三管道内蒸发气体的蒸汽压降低，由闲置切换为蒸镀时控制第三管道内蒸发气体的蒸汽压升高。
在一些实施例中，所述蒸汽压控制组件包括控制器、制冷件以及制热件，所述控制器与所述制冷件及制热件电连接；
由蒸镀切换为闲置时，控制器控制该制冷件降低第三管道内的温度，以将第三管道内蒸发气体的蒸汽压由当前的第一蒸汽压值降低至第二蒸汽压值；由闲置切换为蒸镀时，控制器控制该制热件升高第三管道内的温度，以将第三管道内的蒸发气体的蒸汽压由第二蒸汽压值升高至第一蒸汽压值。
在一些实施例中，所述制热件包覆在第三管道的外壁上，所述制冷件包覆所述制热件。
在一些实施例中，所述制冷件与所述制热件之间设置有保温层。
在一些实施例中，所述制热件为缠绕第三管道的电热丝。
在一些实施例中，所述制冷件包括外套管及制冷剂；所述外套管套设在所述保温层外，所述外套管的内壁与所述保温层的外壁形成间隙，以容纳制冷剂。
在一些实施例中，所述外套管设置有供制冷剂流入的流入口，以及供制冷剂流出的流出口。
在一些实施例中，所述外套管内设置有流量阀，以用于控制所述外套管内制冷剂的流量。
在一些实施例中，第一管道、第二管道以及第三管道为同轴设置，且均呈圆管状；其中，第三管道的通道小于第一管道以及第二管道的通道。
在一些实施例中，所述蒸镀部具有一壁体，所述壁体上设置有与蒸镀腔连通的喷射口，以用于将蒸镀腔内的蒸发气体喷射到基板上
本发明还提供另一种蒸镀装置，包括：
蒸发部、传输管道以及蒸镀部；蒸发部用于对蒸镀材料进行加热蒸发，以在其蒸发腔内形成蒸发气体；传输管道用于将该蒸发腔中形成的蒸发气体传输到蒸镀部的蒸镀腔；蒸镀部用于将其蒸镀腔内收容的蒸发气体蒸镀到基板上；
该传输管道包括第一管道、第二管道以及第三管道；
第一管道的一端与蒸发部的蒸发腔连通，第一管道上设置有第一温控组件，以用于保持第一管道内的温度恒定；
第二管道的一端与蒸镀部的蒸镀腔连通，第二管道上设置有第二温控组件，用于保持第二管道内的温度恒定；
第三管道用于将第一管道的另一端以及第二管道的另一端连通；第三管道上设置有蒸汽压控制组件，该蒸汽压控制组件包括控制器、制冷件以及制热件，所述控制器与所述制冷件及制热件电连接，所述制热件包覆在第三管道的外壁上，所述制冷件包覆所述制热件；
其中，由蒸镀切换为闲置时，控制器控制该制冷件降低第三管道内的温度，以将第三管道内蒸发气体的蒸汽压由当前的第一蒸汽压值降低至第二蒸汽压值；由闲置切换为蒸镀时，控制器控制该制热件升高第三管道内的温度，以将第三管道内的蒸发气体的蒸汽压由第二蒸汽压值升高至第一蒸汽压值。
在一些实施例中，所述制冷件与所述制热件之间设置有保温层。
在一些实施例中，所述制热件为缠绕第三管道的电热丝。
在一些实施例中，所述制冷件包括外套管及制冷剂；所述外套管套设在所述保温层外，所述外套管的内壁与所述保温层的外壁形成间隙，以容纳制冷剂。
在一些实施例中，所述外套管设置有供制冷剂流入的流入口，以及供制冷剂流出的流出口。
在一些实施例中，所述外套管内设置有流量阀，以用于控制所述外套管内制冷剂的流量。
在一些实施例中，第一管道、第二管道以及第三管道为同轴设置，且均呈圆管状；其中，第三管道的通道小于第一管道以及第二管道的通道。
在一些实施例中，所述蒸镀部具有一壁体，所述壁体上设置有与蒸镀腔连通的喷射口，以用于将蒸镀腔内的蒸发气体喷射到基板上。
在一些实施例中，所述喷射口呈圆管状。
在一些实施例中，蒸发部的蒸发腔内设置有用于容纳蒸镀材料的坩埚。
 有益效果
相较于现有的蒸镀装置，本发明的蒸镀装置包括蒸发部、传输管道以及蒸镀部；蒸发部用于对蒸镀材料进行加热蒸发，以在其蒸发腔内形成蒸发气体；传输管道用于将该蒸发腔中形成的蒸发气体传输到蒸镀部的蒸镀腔；蒸镀部用于将其蒸镀腔内收容的蒸发气体蒸镀到基板上；该传输管道包括第一管道、第二管道以及第三管道；第一管道的一端与蒸发部的蒸发腔连通，第一管道上设置有第一温控组件，以用于保持第一管道内的温度恒定；第二管道的一端与蒸镀部的蒸镀腔连通，第二管道上设置有第二温控组件，用于保持第二管道内的温度恒定；第三管道用于将第一管道的另一端以及第二管道的另一端连通；第三管道上设置有蒸汽压控制组件，该蒸汽压控制组件用于在由蒸镀切换为闲置时控制第三管道内蒸发气体的蒸汽压降低，由闲置切换为蒸镀时控制第三管道内蒸发气体的蒸汽压升高。该方案在传输管道上设置蒸汽压控制组件，在由蒸镀切换为闲置时控制第三管道内蒸发气体的蒸汽压降低，以减缓蒸发材料的蒸发速率，使得在闲置时蒸发材料的蒸发量减少，从而降低蒸发材料的损耗，提升材料利用率。
 附图说明
图1为本发明优选实施例中蒸镀装置的第一种立体结构示意图。
图2为本发明优选实施例中蒸镀装置的第二种立体结构示意图。
图3为图2所示蒸镀装置沿线P1-P1的一种剖面图。
图4为图2所示蒸镀装置的局部立体结构示意图。
图5为图4所示局部立体结构沿线P2-P2的一种剖面图。
图6为图4所示局部立体结构沿线P2-P2的另一种剖面图。
图7为图4所示局部立体结构沿线P2-P2的又一种剖面图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的模块是以相同标号表示。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
参阅图1，图1为本发明优选实施例中蒸镀装置的第一种立体结构示意图。如图1所示，本优选实施例的蒸镀装置，包括蒸发部10、传输管道20以及蒸镀部30。
在本发明实施例中，蒸发部10、传输管道20、蒸镀部30以及喷射口40依次连通。蒸发部10用于对蒸镀材料进行加热蒸发，以在其蒸发腔11内形成蒸发气体。传输管道20用于将该蒸发腔11中形成的蒸发气体传输到蒸镀部30的蒸镀腔31内。蒸镀部30用于将其蒸镀腔31内收容的蒸发气体蒸镀到基板上。
在一些实施例中，该蒸发部10的蒸发腔11内可设有用于容纳蒸镀材料的坩埚，坩埚内可放置加热丝，以对蒸镀材料进行加热蒸发形成蒸发气体。一般地，该蒸发材料呈结晶态。
具体地，蒸镀部30具有一壁体32，该壁体32上设置有与蒸镀腔31连通的喷射口40，以用于将蒸镀腔内31的蒸发气体喷射到基板上。如图1所示，该喷射口40可以为一个个呈圆管状的通芯管。实际应用中，该喷射口40还可以为一条沿壁体32设置的狭缝。
本实施例中，该传输管道20包括依次连通的第一管道21、第三管道23、以及第二管道22。如图1到图3所示，第一管道21、第二管道22以及第三管道23可为同轴设置，且均呈圆管状。其中，第三管道23的通道小于第一管道21以及第二管道22的通道。实际应用中，第三管道23的通道可设计为热容较小的狭长区域。
参考图2、图3，具体地，第一管道21的一端与蒸发部10的蒸发腔11连通，第一管道21上设置有第一温控组件60，以用于保持第一管道21内的温度恒定。第二管道22的一端与蒸镀部30的蒸镀腔31连通，第二管道22上设置有第二温控组件70，用于保持第二管道内的温度恒定。
其中，第一温控组件60、第二温控组件70可以包括加热、冷却装置、温度监控装置等，通过温度控制系统精确控制各部分温度。实际应用中，蒸发部10以及蒸镀部30上也可设置有独立的加热、冷却装置、温度监控装置。
第三管道23用于将第一管道21的另一端以及第二管道22的另一端连通。第三管道23上设置有蒸汽压控制组件50，该蒸汽压控制组件50用于在由蒸镀切换为闲置时，控制第三管道23内蒸发气体的蒸汽压降低；由闲置切换为蒸镀时，控制第三管道23内蒸发气体的蒸汽压升高。
其中，蒸汽压控制组件50的设置方式可以多种。比如，如图3所示，蒸汽压控制组件50可包覆第三管道23的外壁面设置。
参考图4和图5，在一些实施方式中，蒸汽压控制组件50可包括控制器、制冷件51以及制热件52。其中，控制器与制冷件51及制热件52电连接。控制器可根据实际情况设置在相应位置。
具体地，由蒸镀切换为闲置时，控制器控制该制冷件51降低第三管道23内的温度，以将第三管道23内蒸发气体的蒸汽压由当前的第一蒸汽压值降低至第二蒸汽压值。由闲置切换为蒸镀时，控制器控制该制热件52升高第三管道23内的温度，以将第三管道内的蒸发气体的蒸汽压由第二蒸汽压值升高至第一蒸汽压值。
继续参考图4和图5，在一些实施方式中，制热件52包覆在第三管道23的外壁上，制冷件51包覆该制热件52。其中，该制热件52可为缠绕第三管道23的电热丝。
参考图6，在一些实施方式中，制冷件51与制热件52之间可设置有保温层53。
参考图7，在一些实施例中，制冷件51可包括外套管511及制冷剂512。外套管511套设在保温层53外，外套管511的内壁与保温层53的外壁形成间隙，以容纳制冷剂。实际应用中，制冷剂512可以为水、氟利昂等物质。
继续参考图7，外套管511可设置有供制冷剂512流入的流入口5111，以及供制冷剂流出的流出口5112。如图7所示，该外套管511内设置有流量阀5113，以用于控制外套管511内制冷剂的流量。
具体应用时，当蒸发源装置由蒸镀切换为闲置后，在蒸汽压控制区（即第三管道23内）实施蒸汽压控制：
首先蒸汽压控制组件50中，控制器控制该制热件52降低制热能力，同时控制制冷件51增加冷却剂512的流量来增强制冷件51冷却能力，以降低通过第三管道23的蒸发气体的蒸汽压。且确保第三管道23内温度保持在蒸发气体无法沉积的温度范围内，以控制蒸发材料的整体蒸发速率，从而降低蒸发部内的蒸镀材料往蒸镀部30输送的速率。通过速率监测装置实时监控材料蒸汽通过蒸汽压控制区域后蒸发材料的蒸发速率变化，并将蒸发速率降低到较低水平。比如，可以利用QCM（Quartz Crystal Microbalance，英晶体微天平）检测蒸发材料质量变化，从而计算出蒸发速率进行实时监控。
该过程中，第一管道21、第二管道22以及蒸镀部30保持恒定温度的控制模式，蒸发部切换到恒定温度的控制模式，第三管道23内的温度下降，以形成温度梯度。比如，第三管道23内的温度最低，往第一管道21内的温度高于蒸发部10内的温度、第二管道22温度不高于蒸镀部30的温度。其中，第一管道21、第二管道22内的温度相较蒸镀时的温度更高一些，以确保第三管道23内的低温不影响蒸镀部30和蒸发部10内的温度。在此过程中，可通过PID（Proportion-Integral-Derivative，比例微积分调节）控制系统精确温度控制。
另外，在闲置模式结束前，需要解除蒸汽压控制模式，以实施蒸发源装置恒定蒸发速率控制模式的恢复：
首先蒸汽压控制组件50中，控制器控制该制热件52提升制热能力，同时控制终止制冷件51增加冷却剂，以升高通过第三管道23的蒸发气体的蒸汽压。由于蒸汽压上升需要一定时间，因此，在达到正常蒸汽压值之前，控制蒸发部10中加热装置升高其蒸发腔11的温度。通过PID控制系统精确控制各区域温度，使蒸发速率快速恢复到原先的正常水准后，可开始实施镀膜。
由上可知，本发明实施例提供的蒸镀装置，包括蒸发部、传输管道以及蒸镀部；蒸发部用于对蒸镀材料进行加热蒸发，以在其蒸发腔内形成蒸发气体；传输管道用于将该蒸发腔中形成的蒸发气体传输到蒸镀部的蒸镀腔；蒸镀部用于将其蒸镀腔内收容的蒸发气体蒸镀到基板上；该传输管道包括第一管道、第二管道以及第三管道；第一管道的一端与蒸发部的蒸发腔连通，第一管道上设置有第一温控组件，以用于保持第一管道内的温度恒定；第二管道的一端与蒸镀部的蒸镀腔连通，第二管道上设置有第二温控组件，用于保持第二管道内的温度恒定；第三管道用于将第一管道的另一端以及第二管道的另一端连通；第三管道上设置有蒸汽压控制组件，该蒸汽压控制组件用于在由蒸镀切换为闲置时控制第三管道内蒸发气体的蒸汽压降低，由闲置切换为蒸镀时控制第三管道内蒸发气体的蒸汽压升高。该方案在传输管道上设置蒸汽压控制组件，在由蒸镀切换为闲置时控制第三管道内蒸发气体的蒸汽压降低，以减缓蒸发材料的蒸发速率，使得在闲置时蒸发材料的蒸发量减少，从而降低蒸发材料的损耗，提升材料利用率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种蒸镀装置，其中，该蒸镀装置包括：蒸发部、传输管道以及蒸镀部；蒸发部用于对蒸镀材料进行加热蒸发，以在其蒸发腔内形成蒸发气体；传输管道用于将该蒸发腔中形成的蒸发气体传输到蒸镀部的蒸镀腔；蒸镀部用于将其蒸镀腔内收容的蒸发气体蒸镀到基板上；
    该传输管道包括第一管道、第二管道以及第三管道；
    第一管道的一端与蒸发部的蒸发腔连通，第一管道上设置有第一温控组件，以用于保持第一管道内的温度恒定；
    第二管道的一端与蒸镀部的蒸镀腔连通，第二管道上设置有第二温控组件，用于保持第二管道内的温度恒定；
    第三管道用于将第一管道的另一端以及第二管道的另一端连通；第三管道上设置有蒸汽压控制组件，该蒸汽压控制组件用于在由蒸镀切换为闲置时控制第三管道内蒸发气体的蒸汽压降低，由闲置切换为蒸镀时控制第三管道内蒸发气体的蒸汽压升高。
  2. 如权利要求1所述的蒸镀装置，其中，所述蒸汽压控制组件包括控制器、制冷件以及制热件，所述控制器与所述制冷件及制热件电连接；
    由蒸镀切换为闲置时，控制器控制该制冷件降低第三管道内的温度，以将第三管道内蒸发气体的蒸汽压由当前的第一蒸汽压值降低至第二蒸汽压值；由闲置切换为蒸镀时，控制器控制该制热件升高第三管道内的温度，以将第三管道内的蒸发气体的蒸汽压由第二蒸汽压值升高至第一蒸汽压值。
  3. 如权利要求2所述的蒸镀装置，其中，所述制热件包覆在第三管道的外壁上，所述制冷件包覆所述制热件。
  4. 如权利要求3所述的蒸镀装置，其中，所述制冷件与所述制热件之间设置有保温层。
  5. 如权利要求3所述的蒸镀装置，其中，所述制热件为缠绕第三管道的电热丝。
  6. 如权利要求4所述的蒸镀装置，其中，所述制冷件包括外套管及制冷剂；所述外套管套设在所述保温层外，所述外套管的内壁与所述保温层的外壁形成间隙，以容纳制冷剂。
  7. 如权利要求6所述的蒸镀装置，其中，所述外套管设置有供制冷剂流入的流入口，以及供制冷剂流出的流出口。
  8. 如权利要求7所述的蒸镀装置，其中，所述外套管内设置有流量阀，以用于控制所述外套管内制冷剂的流量。
  9. 如权利要求1所述的蒸镀装置，其中，第一管道、第二管道以及第三管道为同轴设置，且均呈圆管状；其中，第三管道的通道小于第一管道以及第二管道的通道。
  10. 如权利要求1所述的蒸镀装置，其中，所述蒸镀部具有一壁体，所述壁体上设置有与蒸镀腔连通的喷射口，以用于将蒸镀腔内的蒸发气体喷射到基板上。
  11. 一种蒸镀装置，其中，该蒸镀装置包括：蒸发部、传输管道以及蒸镀部；蒸发部用于对蒸镀材料进行加热蒸发，以在其蒸发腔内形成蒸发气体；传输管道用于将该蒸发腔中形成的蒸发气体传输到蒸镀部的蒸镀腔；蒸镀部用于将其蒸镀腔内收容的蒸发气体蒸镀到基板上；
    该传输管道包括第一管道、第二管道以及第三管道；
    第一管道的一端与蒸发部的蒸发腔连通，第一管道上设置有第一温控组件，以用于保持第一管道内的温度恒定；
    第二管道的一端与蒸镀部的蒸镀腔连通，第二管道上设置有第二温控组件，用于保持第二管道内的温度恒定；
    第三管道用于将第一管道的另一端以及第二管道的另一端连通；第三管道上设置有蒸汽压控制组件，该蒸汽压控制组件包括控制器、制冷件以及制热件，所述控制器与所述制冷件及制热件电连接，所述制热件包覆在第三管道的外壁上，所述制冷件包覆所述制热件；
    其中，由蒸镀切换为闲置时，控制器控制该制冷件降低第三管道内的温度，以将第三管道内蒸发气体的蒸汽压由当前的第一蒸汽压值降低至第二蒸汽压值；由闲置切换为蒸镀时，控制器控制该制热件升高第三管道内的温度，以将第三管道内的蒸发气体的蒸汽压由第二蒸汽压值升高至第一蒸汽压值。
  12. 如权利要求11所述的蒸镀装置，其中，所述制冷件与所述制热件之间设置有保温层。
  13. 如权利要求12所述的蒸镀装置，其中，所述制热件为缠绕第三管道的电热丝。
  14. 如权利要求13所述的蒸镀装置，其中，所述制冷件包括外套管及制冷剂；所述外套管套设在所述保温层外，所述外套管的内壁与所述保温层的外壁形成间隙，以容纳制冷剂。
  15. 如权利要求14所述的蒸镀装置，其中，所述外套管设置有供制冷剂流入的流入口，以及供制冷剂流出的流出口。
  16. 如权利要求15所述的蒸镀装置，其中，所述外套管内设置有流量阀，以用于控制所述外套管内制冷剂的流量。
  17. 如权利要求11所述的蒸镀装置，其中，第一管道、第二管道以及第三管道为同轴设置，且均呈圆管状；其中，第三管道的通道小于第一管道以及第二管道的通道。
  18. 如权利要求11所述的蒸镀装置，其中，所述蒸镀部具有一壁体，所述壁体上设置有与蒸镀腔连通的喷射口，以用于将蒸镀腔内的蒸发气体喷射到基板上。
  19. 如权利要求18所述的蒸镀装置，其中，所述喷射口呈圆管状。
  20. 如权利要求11所述的蒸镀装置，其中，蒸发部的蒸发腔内设置有用于容纳蒸镀材料的坩埚。
PCT/CN2017/087788 2017-04-26 2017-06-09 蒸镀装置 Ceased WO2018196113A1 (zh)

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TWI664306B (zh) * 2017-10-30 2019-07-01 財團法人工業技術研究院 蒸鍍裝置及其校正方法
CN107868944B (zh) * 2017-10-31 2020-02-07 北京北方华创微电子装备有限公司 一种氮化钛原子层沉积装置及其沉积方法
JP6526880B1 (ja) * 2018-06-29 2019-06-05 キヤノントッキ株式会社 蒸発源及び蒸着装置
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