WO2018176757A1 - 像素单元、显示基板和显示面板 - Google Patents

像素单元、显示基板和显示面板 Download PDF

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Publication number
WO2018176757A1
WO2018176757A1 PCT/CN2017/102606 CN2017102606W WO2018176757A1 WO 2018176757 A1 WO2018176757 A1 WO 2018176757A1 CN 2017102606 W CN2017102606 W CN 2017102606W WO 2018176757 A1 WO2018176757 A1 WO 2018176757A1
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Prior art keywords
auxiliary electrode
display substrate
cathode
layer
driving circuit
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PCT/CN2017/102606
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English (en)
French (fr)
Inventor
程鸿飞
张玉欣
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/779,278 priority Critical patent/US11688830B2/en
Priority to EP17877385.9A priority patent/EP3605641A4/en
Publication of WO2018176757A1 publication Critical patent/WO2018176757A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the present disclosure relates to the field of display devices, and in particular to a pixel unit, a display substrate, and a display panel including the display substrate.
  • the existing LED display substrate includes, in addition to the light emitting diode, a thin film transistor array for controlling the light emitting diode.
  • the thin film transistor array includes a plurality of thin film transistors. Since the active layer of the thin film transistor is made of a semiconductor material, the long-time illumination may affect the performance of the thin film transistor to cause leakage current.
  • An object of the present disclosure is to provide a pixel unit, a display substrate, and a display panel including the display substrate, and illumination has less influence on the performance of the thin film transistor in the display panel.
  • a display substrate including a plurality of pixel units, each of the pixel units including a light emitting diode and a driving circuit, the light emitting diode including a cathode; and auxiliary An electrode layer, the auxiliary electrode layer including at least one auxiliary electrode, the at least one auxiliary electrode being disposed in at least one of the plurality of pixel units, wherein the auxiliary electrode and the auxiliary electrode
  • the cathodes of the light emitting diodes located in the same pixel unit are electrically connected, and the auxiliary electrodes cover at least a portion of the driving circuit in the pixel unit in which the auxiliary electrodes are located, the auxiliary electrodes being made of an opaque conductive material to block the orientation A portion of the drive circuit that is illuminated by the auxiliary electrode.
  • the auxiliary electrode is disposed in each of the pixel units.
  • the display substrate includes a pixel defining layer, the pixel defining layer divides the display substrate into a plurality of the pixel units, the auxiliary electrode layer is located above the pixel defining layer, and the auxiliary electrode An orthographic projection of a layer on a substrate of the display substrate, an orthographic projection of at least a portion of the driver circuit on the substrate substrate being located in an orthographic projection of the pixel defining layer on the substrate substrate within the scope.
  • the auxiliary electrode is in direct contact with the cathode and is located above the cathode.
  • the display substrate further includes a passivation layer covering the auxiliary electrode layer.
  • the driving circuit includes a switching transistor and a driving transistor
  • the auxiliary electrode includes a first auxiliary electrode for covering the switching transistor and a second auxiliary electrode for covering the driving transistor.
  • the auxiliary electrode layer further includes an auxiliary electrode line
  • the display substrate includes a gate line and a data line
  • the auxiliary electrode line is used to cover the gate line and/or the data line.
  • the auxiliary electrode line is formed integrally with the auxiliary electrode.
  • a display panel including a display substrate and a package cover for packaging the display substrate, wherein the display substrate is the above display substrate provided by the present disclosure.
  • a pixel unit comprising: a light emitting diode including a cathode; a driving circuit configured to control light emission of the light emitting diode; and an auxiliary electrode electrically connected to the cathode, and the auxiliary An electrode covers at least a portion of the drive circuit, wherein the auxiliary electrode is made of an opaque conductive material to block light that is directed toward a portion of the drive circuit that is covered by the auxiliary electrode.
  • the auxiliary electrode is in direct contact with the cathode and is located above the cathode.
  • the driving circuit includes a switching transistor and a driving transistor
  • the auxiliary electrode includes a first auxiliary electrode for covering the switching transistor and a second auxiliary electrode for covering the driving transistor.
  • FIG. 1 is a cross-sectional view of a portion of a display substrate provided by the present disclosure
  • auxiliary electrode layer is a plan view of an embodiment of the auxiliary electrode layer
  • FIG 3 is a top plan view of another embodiment of the auxiliary electrode layer.
  • pixel unit 110 switching transistor
  • anode 220 luminescent layer
  • cathode 310 first auxiliary electrode
  • a display substrate includes a plurality of pixel units 100. As shown in FIG. 1, each of the pixel units is provided with a light emitting diode 200 and a driving circuit.
  • the diode includes a cathode 230, wherein the display substrate further includes an auxiliary electrode layer, the auxiliary electrode layer includes at least one auxiliary electrode, the auxiliary electrode is disposed in at least one of the pixel units, and the auxiliary electrode and the auxiliary
  • the cathode 230 of the light emitting diode 200 in which the electrodes are located in the same pixel unit is electrically connected
  • the auxiliary electrode covers at least a portion of a driving circuit in the pixel unit where the auxiliary electrode is located, the auxiliary electrode is made of an opaque conductive material to block external light from being irradiated in the driving circuit by the auxiliary The part covered by the electrode.
  • the driving circuit includes a plurality of thin film transistors.
  • the thin film transistor in the portion of the driving circuit covered by the auxiliary electrode is not directly irradiated by the light, or receives less external light, thereby reducing leakage current of the thin film transistor in the portion of the driving circuit.
  • the phenomenon of the display panel including the display substrate can be improved.
  • the auxiliary electrode and the cathode 230 of the light emitting diode 200 are electrically connected, when the display panel including the display substrate is displayed, the auxiliary electrode and the cathode of the light emitting diode are connected in parallel to form an integrated structure, and the resistance of the integrated structure is smaller than The resistance of the cathode of the light emitting diode, thereby reducing the energy consumption of the display panel including the display substrate when performing display.
  • the specific material of the auxiliary electrode is not particularly limited.
  • the auxiliary electrode may be made of a metal material having low electrical resistance and good light shielding properties.
  • the auxiliary electrode can be fabricated using copper.
  • the auxiliary electrode may have a light transmittance of less than 10%.
  • the light emitting diode 200 includes an anode 210, a light emitting layer 220, and a cathode 230.
  • the auxiliary electrode then includes a first auxiliary electrode 310 and a second auxiliary electrode 320.
  • the thin film transistor in the driving circuit includes a switching transistor 110 and a driving transistor 120.
  • the first auxiliary electrode 310 is located above the switching transistor 110 to block the switching transistor 110; the second auxiliary electrode 320 is located above the driving transistor 120 to block the driving transistor 120.
  • the auxiliary electrode is used to block the driving circuit, and therefore, the auxiliary electrode is patterned instead of the entire surface electrode. It should be noted that, for the top light emitting diode, when the auxiliary electrode is formed, the light emitting layer of the light emitting diode should not be blocked, thereby ensuring a good display effect.
  • the auxiliary electrode is disposed in each of the pixel units.
  • the display substrate can be divided into multiple by the pixel defining layer 400.
  • the auxiliary electrode layer is located above the pixel defining layer, and the orthographic projection of the auxiliary electrode layer on the substrate substrate 700 of the display substrate, and the orthographic projection of at least a portion of the driving circuit on the substrate substrate 700 All are within the range of the orthographic projection of the pixel defining layer on the substrate substrate.
  • the pixel defining layer 400 is a boundary of a pixel unit and is not used for light emission. Setting the auxiliary electrode on the pixel defining layer can increase the aperture ratio of the display substrate. For example, a silicon oxide or a nitride of silicon can be utilized to form the pixel defining layer.
  • auxiliary electrode there is no particular provision on how to electrically connect the auxiliary electrode to the cathode 230.
  • an insulating layer may be formed on the cathode, a via hole may be formed on the insulating layer, and then the auxiliary electrode layer may be formed, and the insulating layer may be a silicon nitride layer or a silicon oxide layer, and the auxiliary electrode layer
  • an insulating layer can be used to protect the cathode.
  • the auxiliary electrode of the auxiliary electrode layer is electrically connected to the cathode 230 of the light emitting diode 200 through the via hole.
  • the auxiliary electrode may be formed directly above the cathode 230 in direct contact with the cathode 230, so that the contact resistance between the auxiliary electrode and the cathode 230 can be reduced.
  • the auxiliary electrode layer shown in FIG. 1 can be formed by the following method:
  • the display substrate optionally includes a passivation layer 500 covering the auxiliary electrode layer as shown in FIG.
  • the driving circuit includes a switching transistor 110 and a driving transistor 120.
  • the switching transistor 110 is generally used to control the timing at which the driving transistor 120 is turned on, and the driving transistor 120 is used to control the magnitude of the current that drives the LED to emit light.
  • the auxiliary electrode includes a first auxiliary electrode 310 for covering the switching transistor 110 and a second auxiliary electrode 320 for covering the driving transistor 120. In the embodiment shown in FIG. 1, both the switching transistor 110 and the driving transistor 120 are occluded due to Therefore, in the process of driving the LED to emit light, no leakage current is generated in the switching transistor 110 and the driving transistor 120, so that the display panel including the display substrate can have a better display effect when displaying.
  • the auxiliary electrode layer further includes an auxiliary electrode line 130.
  • the display substrate includes a gate line and a data line, and the auxiliary electrode line 130 is used to cover the gate line and/or Or the data line.
  • the addition of the auxiliary electrode line can further reduce the resistance of the integral structure formed in parallel with the cathode, and can also shield the data line and/or the gate line to enhance the display effect.
  • the auxiliary electrode line and the auxiliary electrode are independent of each other, but the present disclosure is not limited thereto.
  • the auxiliary electrode line is formed integrally with the auxiliary electrode.
  • the pattern of the mask for manufacturing the auxiliary electrode layer can be simplified, and the manufacturing cost can be reduced.
  • the auxiliary electrode line and the auxiliary electrode may be simultaneously formed in one patterning process, for example, the same conductive layer may be patterned to simultaneously form the auxiliary electrode line and the auxiliary electrode. Integral, thereby reducing manufacturing costs.
  • a display panel including a display substrate and a package cover 600 for encapsulating the display substrate, and the package cover 600 may also be a package film layer.
  • the display substrate is the above display substrate provided by the disclosure.
  • the auxiliary electrode is made of a conductive material and is integrated with the cathode of the light emitting diode.
  • the resistance of the integrated structure is smaller than the resistance of the cathode of the light emitting diode, thereby reducing the display panel including the display substrate when displaying Energy consumption.
  • the thin film transistor in the portion of the driving circuit covered by the auxiliary electrode is not directly irradiated by the light, or receives less external light, thereby reducing leakage current of the thin film transistor in the portion of the driving circuit.
  • the phenomenon of the display panel including the display substrate can be improved.
  • the auxiliary electrode and the cathode of the light emitting diode are electrically connected, when the display panel including the display substrate is displayed, the auxiliary electrode and the cathode of the light emitting diode are connected in parallel, and the resistance of the integrated structure is smaller than the The resistance of the cathode of the light emitting diode, thereby reducing the energy consumption of the display panel including the display substrate when performing display.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)

Abstract

一种显示基板，该显示基板包括多个像素单元（100），每个像素单元内都设置有发光二极管（200）和驱动电路，发光二极管包括阴极（230），显示基板还包括辅助电极层，辅助电极层包括至少一个辅助电极（310，320），至少一个像素单元中设置有辅助电极，辅助电极与和该辅助电极位于同一像素单元中的发光二极管的阴极电连接，且辅助电极覆盖该辅助电极所在的像素单元中的驱动电路的至少一部分，辅助电极由不透光导电材料制成，以阻挡外部光线照射驱动电路中被辅助电极覆盖的部分。还提供一种显示面板和一种像素单元。辅助电极既可以防止驱动电路中的薄膜晶体管（110，120）产生漏电流，还可以降低包括显示基板的显示面板在进行显示时的能耗。

Description

像素单元、显示基板和显示面板
相关申请的交叉引用
本申请要求于2017年03月31日递交的中国专利申请第201710209154.5号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开涉及显示装置领域，具体地，涉及一种像素单元、一种显示基板和一种包括该显示基板的显示面板。
背景技术
现有的发光二极管显示基板上，除了包括发光二极管之外，还包括用于控制发光二极管发光的薄膜晶体管阵列。薄膜晶体管阵列包括多个薄膜晶体管，由于薄膜晶体管的有源层是由半导体材料制成，因此，在长时间光照可能会影响到薄膜晶体管的性能，使之产生漏电流。
因此，如何消除长时间光照对薄膜晶体管性能的影响成为本领域亟待解决的技术问题。
发明内容
本公开的目的在于提供一种像素单元、一种显示基板和一种包括该显示基板的显示面板，光照对所述显示面板中薄膜晶体管的性能影响较小。
为了实现上述目的，作为本申请的一个方面，提供一种显示基板，所述显示基板包括多个像素单元，每个所述像素单元包括发光二极管和驱动电路，所述发光二极管包括阴极；以及辅助电极层，所述辅助电极层包括至少一个辅助电极，所述至少一个辅助电极设置在所述多个像素单元中的至少一个中，其中所述辅助电极与和该辅助电极 位于同一像素单元中的发光二极管的阴极电连接，且所述辅助电极覆盖该辅助电极所在的像素单元中的驱动电路的至少一部分，所述辅助电极由不透光导电材料制成，以阻挡朝向所述驱动电路中被所述辅助电极覆盖的部分照射的光。
可选地，每个所述像素单元中均设置有所述辅助电极。
可选地，所述显示基板包括像素界定层，所述像素界定层将所述显示基板划分为多个所述像素单元，所述辅助电极层位于所述像素界定层上方，且所述辅助电极层在所述显示基板的衬底基板上的正投影、所述驱动电路的至少一部分在所述衬底基板上的正投影均位于所述像素界定层在所述衬底基板上的正投影的范围内。
可选地，所述辅助电极与所述阴极直接接触，且位于所述阴极上方。
可选地，所述显示基板还包括覆盖所述辅助电极层的钝化层。
可选地，所述驱动电路包括开关晶体管和驱动晶体管，所述辅助电极包括用于覆盖所述开关晶体管的第一辅助电极和用于覆盖所述驱动晶体管的第二辅助电极。
可选地，所述辅助电极层还包括辅助电极线，所述显示基板包括栅线和数据线，所述辅助电极线用于覆盖所述栅线和/或所述数据线。
可选地，所述辅助电极线与所述辅助电极形成为一体。
作为本公开的另一个方面，提供一种显示面板，所述显示面板包括显示基板和用于封装所述显示基板的封装盖板，其中，所述显示基板为本公开所提供的上述显示基板。
作为本公开的另一个方面，提供一种像素单元，包括：发光二极管，包括阴极；驱动电路，配置为控制所述发光二极管的发光；以及辅助电极，与所述阴极电连接，且所述辅助电极覆盖所述驱动电路的至少一部分，其中所述辅助电极由不透光导电材料制成，以阻挡朝向所述驱动电路中被所述辅助电极覆盖的部分照射的光。
可选地，所述辅助电极与所述阴极直接接触，且位于所述阴极上方。
可选地，所述驱动电路包括开关晶体管和驱动晶体管，所述辅助电极包括用于覆盖所述开关晶体管的第一辅助电极和用于覆盖所述驱动晶体管的第二辅助电极。
附图说明
附图是用来提供对本公开的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本公开，但并不构成对本公开的限制。在附图中：
图1是本公开所提供的显示基板的一部分的剖视图；
图2是所述辅助电极层的一种实施方式的俯视图；
图3是所述辅助电极层的另一种实施方式的俯视图。
附图标记说明
100：像素单元        110：开关晶体管
120：驱动晶体管      200：发光二极管
210：阳极            220：发光层
230：阴极            310：第一辅助电极
320：第二辅助电极    400：像素界定层
500：钝化层          600：封装盖板
具体实施方式
以下结合附图对本公开的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本公开，并不用于限制本公开。
作为本公开的一个方面，提供一种显示基板，所述显示基板包括多个像素单元100，如图1所示，每个所述像素单元内都设置有发光二极管200和驱动电路，所述发光二极管包括阴极230，其中，所述显示基板还包括辅助电极层，所述辅助电极层包括至少一个辅助电极，至少一个所述像素单元中设置有所述辅助电极，所述辅助电极与和该辅助电极位于同一像素单元中的发光二极管200的阴极230电连 接，且所述辅助电极覆盖该辅助电极所在的像素单元中的驱动电路的至少一部分，所述辅助电极由不透光导电材料制成，以阻挡外部光线照射所述驱动电路中被所述辅助电极覆盖的部分。
容易理解的是，驱动电路包括多个薄膜晶体管。在本公开所提供的显示基板中，驱动电路被辅助电极覆盖的部分中的薄膜晶体管不会被光线直接照射，或者接收到外部光线较少，因此降低了该部分驱动电路中薄膜晶体管出现漏电流的现象，从而可以改善包括所述显示基板的显示面板的显示效果。
由于辅助电极和发光二极管200的阴极230电连接，因此，在包括所述显示基板的显示面板进行显示时，所述辅助电极和所述发光二极管的阴极并联成一体结构，该一体结构的电阻小于所述发光二极管的阴极的电阻，从而降低了包括所述显示基板的显示面板在进行显示时的能耗。
在本公开中，对辅助电极的具体材料并没有特殊的限制，例如，所述辅助电极可以由电阻低、且遮光性好的金属材料制成。例如，可以利用铜来制造所述辅助电极。在一个实施例中，辅助电极的透光率可以小于10％。
在图1中所示的实施方式中，发光二极管200包括阳极210、发光层220和阴极230。辅助电极则包括第一辅助电极310和第二辅助电极320。驱动电路中的薄膜晶体管包括开关晶体管110和驱动晶体管120。相应地，第一辅助电极310位于开关晶体管110上方，对开关晶体管110进行遮挡；第二辅助电极320位于驱动晶体管120上方，对驱动晶体管120进行遮挡。
在本公开中，仅利用所述辅助电极来遮挡驱动电路，因此，辅助电极是具有图形的，而非整面电极。需要注意的是，对于顶发光二极管，在形成辅助电极时，不应当对发光二极管的发光层造成遮挡，从而可确保良好的显示效果。
为了实现更好的遮挡效果，可选地，每个所述像素单元中均设置有所述辅助电极。
在本公开中，可以利用像素界定层400将显示基板划分为多个 像素单元。所述辅助电极层位于所述像素界定层上方，且所述辅助电极层在所述显示基板的衬底基板700上的正投影、所述驱动电路的至少一部分在衬底基板700上的正投影均位于所述像素界定层在所述衬底基板上的正投影的范围内。
像素界定层400是像素单元的边界，不用于发光，将辅助电极设置在像素界定层上可以提高显示基板的开口率。例如，可以利用硅的氧化物或者硅的氮化物来制成像素界定层。
在本公开中，对如何将所述辅助电极与阴极230电连接并没有特殊的规定。例如，可以在形成了阴极层之后，在阴极上形成绝缘层，在绝缘层上形成过孔，随后再形成所述辅助电极层，绝缘层可以为氮化硅层或氧化硅层，辅助电极层采用溅射方法形成时，绝缘层可以用来保护阴极。辅助电极层的辅助电极通过过孔与发光二极管200的阴极230电连接。可选地，如图1所示，可以将所述辅助电极直接形成在阴极230上方，与阴极230直接接触，从而可以减少辅助电极与阴极230之间的接触电阻。
在本公开中，可以利用如下方法形成图1中所示的辅助电极层：
在阴极层上形成光刻胶层；
对光刻胶层进行曝光显影，形成沟槽，所述沟槽的形状和位置与所述辅助电极层一致；
沉积形成金属材料层，落入沟槽中的金属材料形成为所述辅助电极；
剥离光刻胶。
为了对辅助电极层和阴极230进行保护，可选地，如图1所示所述显示基板还包括覆盖所述辅助电极层的钝化层500。
如上文中所述，所述驱动电路包括开关晶体管110和驱动晶体管120，开关晶体管110通常用于控制驱动晶体管120开启的时机，而驱动晶体管120则用于控制驱动发光二极管发光的电流的大小。在本公开中，所述辅助电极包括用于覆盖开关晶体管110的第一辅助电极310和用于覆盖驱动晶体管120的第二辅助电极320。在图1中所示的实施方式中，开关晶体管110和驱动晶体管120均得到遮挡，因 此，在驱动发光二极管发光的过程中，开关晶体管110和驱动晶体管120中均不会产生漏电流，从而可以使得包括所述显示基板的显示面板在进行显示时具有较好的显示效果。
可选地，如图2和图3所示，所述辅助电极层还包括辅助电极线130，所述显示基板包括栅线和数据线，该辅助电极线130用于覆盖所述栅线和/或所述数据线。增加了辅助电极线后可以进一步的降低与阴极并联形成的一体结构的电阻，并且还可以对数据线和/或栅线进行屏蔽，从而增强显示效果。
在图2中所示的实施方式中，辅助电极线与辅助电极是互相独立的，但本公开并不限于此。
可选地，如图3中舒适，所述辅助电极线与所述辅助电极形成为一体。从而可以简化制造所述辅助电极层的掩膜板的图形，降低制造成本。在一个实施例中，可以在一次构图工艺中同时形成所述辅助电极线与所述辅助电极，例如，可以对同一个导电层图案化，从而同时将所述辅助电极线与所述辅助电极形成为一体，从而降低制造成本。
作为本公开的另一个方面，提供一种显示面板，所述显示面板包括显示基板和用于封装所述显示基板的封装盖板600，封装盖板600也可以为封装薄膜层。其中，所述显示基板为本公开所提供的上述显示基板。
如上文中所述，由于显示基板的驱动电路的至少一部分能得到了遮挡，因此，在显示面板进行显示时，漏电流减轻，甚至不会出现漏电流，从而可以优化显示面板的显示效果。并且，辅助电极由导电材料制成，与发光二极管的阴极并联成一体结构，该一体结构的电阻小于所述发光二极管的阴极的电阻，从而降低了包括所述显示基板的显示面板在进行显示时的能耗。
在本公开所提供的显示基板中，驱动电路被辅助电极覆盖的部分中的薄膜晶体管不会被光线直接照射，或者接收到外部光线较少，因此降低了该部分驱动电路中薄膜晶体管出现漏电流的现象，从而可以改善包括所述显示基板的显示面板的显示效果。
由于辅助电极和发光二极管的阴极电连接，因此，在包括所述显示基板的显示面板进行显示时，所述辅助电极和所述发光二极管的阴极并联成一体结构，该一体结构的电阻小于所述发光二极管的阴极的电阻，从而降低了包括所述显示基板的显示面板在进行显示时的能耗。
可以理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本公开的保护范围。

Claims (12)

  1. 一种显示基板，所述显示基板包括：
    多个像素单元，每个所述像素单元包括发光二极管和驱动电路，所述发光二极管包括阴极；以及
    辅助电极层，所述辅助电极层包括至少一个辅助电极，所述至少一个辅助电极设置在所述多个像素单元中的至少一个中，
    其中所述辅助电极与和该辅助电极位于同一像素单元中的发光二极管的阴极电连接，且所述辅助电极覆盖该辅助电极所在的像素单元中的驱动电路的至少一部分，所述辅助电极由不透光导电材料制成，以阻挡朝向所述驱动电路中被所述辅助电极覆盖的部分照射的光。
  2. 根据权利要求1所述的显示基板，其中，每个所述像素单元中均设置有所述辅助电极。
  3. 根据权利要求1所述的显示基板，其中，所述显示基板包括像素界定层，所述像素界定层将所述显示基板划分为多个所述像素单元，所述辅助电极层位于所述像素界定层上方，且所述辅助电极层在所述显示基板的衬底基板上的正投影、所述驱动电路的至少一部分在所述衬底基板上的正投影均位于所述像素界定层在所述衬底基板上的正投影的范围内。
  4. 根据权利要求1所述的显示基板，其中，所述辅助电极与所述阴极直接接触，且位于所述阴极上方。
  5. 根据权利要求1至4中任意一项所述显示基板，其中，所述显示基板还包括覆盖所述辅助电极层的钝化层。
  6. 根据权利要求1-5中任意一项所述的显示基板，其中，所述驱动电路包括开关晶体管和驱动晶体管，所述辅助电极包括用于覆盖 所述开关晶体管的第一辅助电极和用于覆盖所述驱动晶体管的第二辅助电极。
  7. 根据权利要求1至6中任意一项所述的显示基板，其中，所述辅助电极层还包括辅助电极线，所述显示基板包括栅线和数据线，所述辅助电极线用于覆盖所述栅线和/或所述数据线。
  8. 根据权利要求7所述的显示基板，其中，所述辅助电极线与所述辅助电极形成为一体。
  9. 一种显示面板，所述显示面板包括显示基板和用于封装所述显示基板的封装盖板，其中，所述显示基板为权利要求1至8中任意一项所述的显示基板。
  10. 一种像素单元，包括：
    发光二极管，包括阴极
    驱动电路，配置为控制所述发光二极管的发光；以及
    辅助电极，与所述阴极电连接，且所述辅助电极覆盖所述驱动电路的至少一部分，
    其中所述辅助电极由不透光导电材料制成，以阻挡朝向所述驱动电路中被所述辅助电极覆盖的部分照射的光。
  11. 根据权利要求10所述的像素单元，其中，所述辅助电极与所述阴极直接接触，且位于所述阴极上方。
  12. 根据权利要求10或11所述的像素单元，其中，所述驱动电路包括开关晶体管和驱动晶体管，所述辅助电极包括用于覆盖所述开关晶体管的第一辅助电极和用于覆盖所述驱动晶体管的第二辅助电极。
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