WO2018152934A1 - 一种oled显示器件、其制备方法及oled显示器 - Google Patents

一种oled显示器件、其制备方法及oled显示器 Download PDF

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Publication number
WO2018152934A1
WO2018152934A1 PCT/CN2017/079438 CN2017079438W WO2018152934A1 WO 2018152934 A1 WO2018152934 A1 WO 2018152934A1 CN 2017079438 W CN2017079438 W CN 2017079438W WO 2018152934 A1 WO2018152934 A1 WO 2018152934A1
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blue
green light
light
layer
oled display
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PCT/CN2017/079438
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English (en)
French (fr)
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李先杰
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深圳市华星光电技术有限公司
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Priority to US15/520,335 priority Critical patent/US10347696B2/en
Publication of WO2018152934A1 publication Critical patent/WO2018152934A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/27—Combination of fluorescent and phosphorescent emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds

Definitions

  • the present invention relates to the field of OLED device technologies, and in particular, to an OLED display device, a method for fabricating the same, and an OLED display.
  • OLED display has the characteristics of self-illumination, simple structure, light weight, fast response, wide viewing angle, low power consumption and flexible display. It is known as “dream display”. Due to its numerous potentials, OLED displays have been favored by major display manufacturers and become the third generation of displays following cathode ray displays (CRTs) and liquid crystal displays (LCDs).
  • CRTs cathode ray displays
  • LCDs liquid crystal displays
  • the OLED display device for display in an OLED display is one of its important components, and the color display of the OLED display device has a very large influence on the display quality of the OLED display.
  • the color display of the OLED display device mainly adopts the following two methods, one method is to prepare an OLED display device having three sub-pixels of red, green and blue through a Fine Metal Mask (FMM), thereby realizing Color display, but this method is limited by FMM, its resolution can not be improved, can not meet the requirements of high resolution.
  • FMM Fine Metal Mask
  • another method is to pass white light and RGB filters. This method does not require mask alignment, that is, it is not limited by the fine metal mask, but the color saturation is low and the color gamut is not wide enough.
  • the color gamut of OLED displays currently produced using white and RGB filters is only 86% of the standard color gamut of the National Television Standards Committee.
  • the present invention provides an OLED display device, a method of fabricating the same, and an OLED display, and the OLED display device of the present invention can improve the saturation and color gamut of its color display.
  • a technical solution proposed by the present invention is to provide a method for preparing an OLED display device, which comprises:
  • a color conversion layer on the substrate by wet film formation; forming a thin film transistor array, an anode, a hole injection layer and a hole transport layer, a blue-green light-emitting layer, an electron transport layer, and the like, sequentially above the color conversion layer, Electronic input layer and cathode;
  • the color conversion layer comprises a blue light filter unit and a green light conversion unit which are arranged at intervals a red light conversion unit; the green light conversion unit and the red light conversion unit are both film layers formed of an organometallic halide perovskite material;
  • the green light converting unit and the red light converting unit respectively absorb blue-green light emitted by the blue-green light emitting layer, and convert the blue-green light into green light and red light, respectively, and the blue light filtering unit will The blue-green light is filtered to obtain blue light, thereby achieving color display.
  • Another technical solution proposed by the present invention is to provide an OLED display device, the display device comprising:
  • a substrate and a color conversion layer and a blue-green light emitting layer stacked on the substrate;
  • the color conversion layer comprises a blue light filter unit, a green light conversion unit and a red light conversion unit arranged at intervals; the green light conversion unit and the red light conversion unit are both formed of an organic metal halide perovskite material.
  • Film layer
  • the green light converting unit and the red light converting unit respectively absorb blue-green light emitted by the blue-green light emitting layer, and convert the blue-green light into green light and red light, respectively, and the blue light filtering unit will The blue-green light is filtered to obtain blue light, thereby achieving color display.
  • Another technical solution proposed by the present invention is to provide an OLED display including an OLED display device and a driving control circuit, the driving control circuit connecting the OLED display device, providing a driving signal for the OLED display device and control signal;
  • the OLED display device includes:
  • a substrate and a color conversion layer and a blue-green light emitting layer stacked on the substrate;
  • the color conversion layer comprises a blue light filter unit, a green light conversion unit and a red light conversion unit arranged at intervals; the green light conversion unit and the red light conversion unit are both formed of an organic metal halide perovskite material.
  • Film layer
  • the green light converting unit and the red light converting unit respectively absorb blue-green light emitted by the blue-green light emitting layer, and convert the blue-green light into green light and red light, respectively, and the blue light filtering unit will The blue-green light is filtered to obtain blue light, thereby achieving color display.
  • the OLED display device comprises a substrate and a color conversion layer and a blue-green light emitting layer stacked thereon;
  • the color conversion layer comprises a blue light filtering unit and a green light conversion unit arranged at intervals And a red light conversion unit;
  • the red light conversion unit and the green light conversion unit are both film layers formed of an organometallic halide perovskite material. Since the material of the red light conversion unit and the green light conversion unit is an organic metal halide perovskite material and has high photoluminescence efficiency, the red light conversion unit and the green light conversion unit respectively absorb the blue-green light emitted by the blue-green light-emitting layer.
  • the blue light filter unit filters blue-green light to obtain blue light, which enables the color conversion layer to output color light with high saturation, realize color display, and improve saturation of color display. Degree and increase the color gamut of its color display.
  • FIG. 1 is a schematic structural view of a first embodiment of an OLED display device of the present invention
  • FIG. 2 is a schematic view showing the arrangement of color conversion layers in the OLED display device shown in FIG. 1;
  • FIG. 3 is a schematic structural view of a second embodiment of an OLED display device of the present invention.
  • FIG. 4 is a schematic structural view of a third embodiment of an OLED display device of the present invention.
  • 5a is a schematic structural view of a first embodiment of a white light converting unit in the OLED display device shown in FIG. 4;
  • 5b is a schematic structural view of a second embodiment of a white light converting unit in the OLED display device shown in FIG. 4;
  • FIG. 6 is a schematic view showing an arrangement of an embodiment of a color conversion layer in the OLED display device shown in FIG. 4;
  • FIG. 7 is a schematic view showing an arrangement of a color conversion layer in the OLED display device shown in FIG. 4;
  • FIG. 8 is a schematic structural view of an application example of an OLED display device of the present invention.
  • FIG. 1 is a schematic structural view of a first embodiment of an OLED display device of the present invention.
  • the OLED display device 100 of the present embodiment includes a substrate 11, and a color conversion layer 12 and a blue-green light-emitting layer 15 stacked on the substrate 11, and the color conversion layer 12 includes a red light conversion unit disposed at intervals. 121. Green light conversion unit 122 and blue light filter unit 123. Both the red light conversion unit 121 and the green light conversion unit 122 are film layers formed of an organometallic halide perovskite material. It can be understood that the structure between the color conversion layer 12 and the blue-green light-emitting layer 15 will be simplified to the first structure 14 in FIG. 1, and the structure above the blue-green light-emitting layer 15 will be simplified to the second structure 16.
  • Organic metal halide perovskite for preparing red light conversion unit 121 and green light conversion unit 122
  • the material is a kind of semiconductor material with photoelectric properties, which has low bulk trap density and high photoluminescence efficiency, and can realize adjustable wavelength of light by changing components therein. At the same time, such materials have the photoelectric properties of inorganic semiconductors and the low-temperature film forming properties of organic materials.
  • the blue-green light-emitting layer 15 is used to emit blue-green light with higher saturation, and the red-light conversion unit 121 and the green light-converting unit 122 respectively absorb the blue-green light emitted by the blue-green light-emitting layer 15, and the blue light is emitted.
  • the green light is converted into red light and green light, respectively, and the blue light filtering unit 123 performs green light processing on the blue-green light to emit a corresponding blue light.
  • the red light converting unit 121, the green light converting unit 122, and the blue light filtering unit 123 respectively correspond to one pixel, and the pixel includes a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
  • the red light conversion unit 121 corresponds to the red sub-pixel
  • the green light conversion unit 122 corresponds to the green sub-pixel
  • the blue light filter unit 123 corresponds to the blue sub-pixel.
  • the red sub-pixel, the green sub-pixel, and the blue sub-pixel respectively correspond to one TFT, so as to control the red light conversion unit 121, the green light conversion unit 122, and the blue light filter unit 123 corresponding to each of the sub-pixels, thereby realizing three kinds of primary color lights.
  • the display shows a color display.
  • FIG. 2 is a schematic diagram showing the arrangement of the color conversion layer 12 in the OLED display device 100 shown in FIG. 1. As shown in FIG. 2, each adjacent two rows of red light converting unit 121, green light converting unit 122 and blue light filtering unit 123 are arranged in the same manner, and each row of red light converting unit 121 and green light converting The unit 122 and the blue light filtering unit 123 are sequentially spaced from left to right in the horizontal direction.
  • both the red light conversion unit and the green light conversion unit absorb the blue-green light emitted by the same blue-green light-emitting layer and perform corresponding conversion, and do not need to fabricate three primary color sub-pixels through the fine metal mask, that is, It is not limited by the fine metal mask, can improve its resolution according to requirements, and has a simple preparation process, which can reduce the preparation cost of the OLED display device.
  • the red light conversion unit and the green light conversion unit absorb blue-green light, the absorption of the blue-green light by the organometallic halide perovskite material is different, and the white light is filtered by using the RGB filter. The way the light gets red, green, and blue light does not reduce the saturation of the emitted light.
  • the OLED display device of the present embodiment can satisfy the resolution requirement while improving the saturation of the color display and increasing the color gamut of the color display.
  • the prepared OLED display device Based on the characteristics of the organometallic halide perovskite material, the prepared OLED display device has a thin device thickness and can be applied to a large-sized OLED display.
  • the organometallic halide perovskite material used to prepare the red light converting unit 121 and the green light converting unit 122 is a single material containing an organometallic halide perovskite material, or contains a plurality of organic metal halides. a hybrid material of perovskite materials. Further, the organometallic halide perovskite material has a structural formula of CH 3 NH 3 PbA 3 , wherein A is at least one of a chlorine element, a bromine element, and an iodine element.
  • the blue light filter unit 123 is a film layer formed using a quantum dot material or an organic material commonly used in LCDs.
  • the red light converting unit 121, the green light converting unit 122, and the blue light filtering unit 123 can each form a corresponding film layer on the substrate by wet film formation.
  • the thickness of the film layers of the three is between 10 nm and 200 nm.
  • the thickness of the red light conversion unit 121, the thickness of the green light conversion unit 122, and the thickness of the blue light filter unit 123 are all the same.
  • the blue-green light-emitting layer 15 includes an organic host material and a blue-green light-emitting organic guest material, that is, the organic host material and the blue-green light-emitting organic guest material are doped at a certain mass ratio.
  • the blue-green light-emitting layer 15 can emit blue-green light of high brightness and high saturation by changing the doping ratio of the blue-green light-emitting organic guest material.
  • the blue-green light-emitting organic guest material of the blue-green light-emitting layer 15 may be an organic fluorescent material or an organic phosphorescent material, and the organic host material may be an anthracene derivative or a wide band gap organic material.
  • the doping mass ratio of the organic host material and the blue-green light-emitting organic guest material in the blue-green light-emitting layer 15 affects the luminous efficiency and the saturation of the blue-green light.
  • the organic host material and the blue-green light-emitting organic The doping mass ratio of the guest material is from 1:0.01 to 1:1.
  • the blue-green light-emitting organic guest material may be a single blue-green light-emitting material or a mixed material of a blue light-emitting material and a green light-emitting material.
  • FIG. 3 is a schematic structural view of a second embodiment of an OLED display device of the present invention.
  • the OLED display device 200 of the present embodiment also includes a substrate 11, and a color conversion layer 12 and a blue-green light-emitting layer 15 which are stacked on the substrate 11.
  • the blue-green light-emitting layer 15 in this embodiment is the same as the blue-green light-emitting layer 15 in the OLED display device 100 shown in FIG. 1, and details are not described herein again.
  • the color conversion layer 12 in this embodiment includes a red light conversion unit 121, a green light conversion unit 122, and a blue light filter unit 123 which are disposed at intervals.
  • the green light conversion unit 124 is further included above the red light conversion unit 121.
  • the red light converting unit 121, the green light converting unit 122, and the green light converting subunit 124 are each a film layer formed of an organic metal halide perovskite material.
  • the green light conversion sub-unit 124 above the red light conversion unit 121 absorbs the blue-green light emitted by the blue-green light-emitting layer 15, and converts the blue-green light into green light, and the green light passes through the red light conversion unit.
  • the red conversion unit 121 is caused to emit red light;
  • the green light conversion unit 122 absorbs the blue-green light emitted by the blue-green light-emitting layer 15, and converts the blue-green light into green light;
  • the blue-light filter unit 123 emits the blue-green light-emitting layer. Issued by 15
  • the blue-green light is filtered to obtain blue light, thereby enabling the OLED display device to realize color display.
  • the red light converting unit 121, the green light converting unit 122, and the green light converting subunit 124 can each form a corresponding film layer by wet film formation.
  • the thickness of the green light conversion unit 122 may be between 10 nanometers and 200 nanometers.
  • the red light conversion unit 121 and the green light conversion sub-unit 124 are stacked, and the sum of the thicknesses of the two is the same as the thickness of the green light conversion unit 122.
  • the blue light filtering unit 123 can also form a corresponding film layer by wet film formation, the thickness of which is the same as the thickness of the green light converting unit 122, and is also between 10 nm and 200 nm.
  • FIG. 4 is a schematic structural diagram of a third embodiment of the OLED display device of the present invention. This embodiment is improved on the basis of the first embodiment of the OLED display device 100 shown in FIG. 1.
  • the OLED display device 300 of the present embodiment includes a substrate 11, and a color conversion layer 12 and a blue-green light-emitting layer 15 which are stacked on the substrate 11.
  • the color conversion layer 12 includes a red light conversion unit 121, a green light conversion unit 122, and a blue light filter unit 123 which are disposed at intervals. Further, the color conversion layer 12 further includes a white light conversion unit 125.
  • the blue-green light emitting layer 15, the red light converting unit 121, the green light converting unit 122, and the blue light filtering unit 123 are respectively the same as those in the first embodiment of the OLED display device shown in FIG. No longer.
  • the difference is that the white light conversion unit 125 is disposed adjacent to the red light conversion unit 121, the green light conversion unit 122, or the blue light filter unit 123.
  • the white light converting unit 125 includes an opening subunit 1251 and a red light converting subunit 1252 which are disposed adjacent to each other. Further, the opening subunits 1251 and the red light converting subunits 1252 in the white light converting unit 125 are closely connected with each other without a gap.
  • the red light conversion sub-unit 1252 absorbs the blue-green light emitted by the blue-green light-emitting layer, and respectively converts the blue-green light into red light, and the opening sub-unit 1251 transmits the blue-green light emitted by the blue-green light-emitting layer; the opening sub-unit 1251 and the red light
  • the blue-green light emitted by the blue-green light-emitting layer can be converted into white light, thereby improving the luminance of the OLED display device and improving the display quality.
  • the red light conversion sub-unit 1253 in the white light conversion unit 125 further includes a green light conversion sub-unit 1253.
  • the green light conversion sub-unit 1253 absorbs the blue-green light emitted by the blue-green light-emitting layer, converts the blue-green light into green light, and converts the green light into red light by the red light conversion sub-unit 1252.
  • the blue-green light emitted by the blue-green light-emitting layer can be converted into white light, thereby improving the luminance of the OLED display device and improving the display quality.
  • FIG. 6 is a schematic diagram showing the arrangement of the color conversion layer 12 in the OLED display device 300 shown in FIG.
  • each adjacent two rows of red light converting unit 121, green light converting unit 122, blue light filtering unit 123, and white light converting unit 125 in the color conversion layer 12 are arranged in the same manner, and each row of red light converting units 121.
  • the green light converting unit 122, the blue light filtering unit 123, and the white light converting unit 125 are sequentially disposed from left to right in the horizontal direction.
  • the red light converting unit 121 , the green light converting unit 122 , the blue light filtering unit 123 , and the white light converting unit 125 may also be arranged in an array, that is, the red light converting unit 121 and the green light.
  • the conversion unit 122, the blue light filter unit 123, and the white light conversion unit 125 are sequentially disposed in the clockwise direction.
  • the red light converting unit 121, the green light converting unit 122, the blue light filtering unit 123, and the white light converting unit 125 may be sequentially disposed in the counterclockwise direction.
  • the display effect of the OLED display device of the present invention is applicable to the OLED display device of different pixel arrangement regardless of the arrangement of the respective conversion units in the color conversion layer.
  • FIG. 8 is a schematic structural diagram of an application example of an OLED display device of the present invention.
  • the first structure 14 includes a thin film transistor array 141, an anode 142, a hole injection layer 143 and holes which are sequentially stacked.
  • the second structure 16 includes an electron transport layer 161, an electron input layer 162, and a cathode 163 which are sequentially stacked.
  • the substrate is a transparent material, and may be a glass plate or a plastic.
  • the thin film transistor array 141 includes a semiconductor layer, an insulating layer, a source, a drain, and a gate.
  • the anode 142 is a transparent conductive metal oxide such as an indium tin oxide (ITO) or indium zinc oxide (IZO) conductive film.
  • the film thickness of the anode 142 may be 20 nanometers.
  • the hole injection layer 143 may be an organic small molecule hole injection material, a polymer hole injection material, or a metal oxide hole injection material.
  • the film thickness of the hole injection layer 143 is between 1 nm and 100 nm.
  • the hole transport layer 144 may be an organic small molecule hole transport material or a polymer hole transport material.
  • the film thickness of the hole transport layer 144 is between 10 nm and 100 nm.
  • the electron transport layer 161 may be a metal complex material or an imidazole electron transport material.
  • the film thickness of the electron transport layer 161 is between 10 nm and 100 nm.
  • the electron injecting layer may be a metal complex or an alkaline earth metal or a salt thereof.
  • the thickness of the electron injection layer is between 0.5 nm and 10 nm.
  • the cathode 163 material is a low work function metal material such as lithium, magnesium, calcium, strontium, barium, strontium, strontium, barium, A metal material such as aluminum, tantalum, niobium or silver or an alloy of these metal materials; the above-mentioned low work function metal materials may be used singly or in combination of two or more.
  • the film thickness of the cathode 163 is between 10 nm and 1000 nm.
  • the thin film transistor array 141, the anode 142, the hole injection layer 143, the hole transport layer 144, the electron transport layer 161, the electron injection layer, and the cathode 163 may each be formed into a corresponding film layer by sputtering, vacuum evaporation, or the like.
  • the OLED display device further includes a package structure, and the package structure of the embodiment includes a cover plate 17 and an encapsulant 18.
  • the cover plate 17 is above the cathode 163 and the encapsulant 18 is around the OLED display element.
  • the OLED display element is packaged by the encapsulant 18 and the cover 17.
  • the cover plate 17 is a glass cover or a cover of flexible material.
  • the encapsulant 18 is an epoxy resin or an ultraviolet curing glue.
  • the package structure of the OLED display device of the present embodiment is only an application example, and is not limited to the package structure of the OLED display device; the package structure of the OLED display device may also be an alternately stacked barrier layer and Other package structures such as a package structure formed by a buffer layer.
  • the present invention also provides an OLED display.
  • the OLED display device in the OLED display may be any one of the OLED display devices of FIG. 1, FIG. 3 or FIG. 4, and details are not described herein again.

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Abstract

一种OLED显示器件、其制备方法及OLED显示器；该OLED显示器件包括基板（11）及其上方层叠设置的色彩转换层（12）和蓝绿光发光层（15）；其中，色彩转换层包括间隔设置的蓝光滤光单元（123）、绿光转换单元（122）以及红光转换单元（121）；绿光转换单元和红光转换单元均为由有机金属卤化物钙钛矿材料形成的膜层。通过蓝绿光发光层发出高饱和度的蓝绿光，绿光转换单元和红光转换单元分别吸收蓝绿光发光层发出的蓝绿光，将蓝绿光分别转换为绿光和红光，蓝光滤光单元将蓝绿光过滤得到蓝光，从而实现彩色显示。

Description

一种OLED显示器件、其制备方法及OLED显示器 【技术领域】
本发明涉及OLED器件技术领域，具体而言涉及一种OLED显示器件、其制备方法及OLED显示器。
【背景技术】
OLED显示器具有自发光、结构简单、轻薄、响应速度快、视角宽、功耗低及可实现柔性显示等特性，被誉为“梦幻显示器”。由于其众多势，OLED显示器得到了各大显示器厂家的青睐，并成为继阴极射线显示器(Cathode Ray Tube，CRT)与液晶显示器(Liquid Crystal Display，LCD)之后的第三代显示器。
OLED显示器中用于显示的OLED显示器件是其重要元件之一，OLED显示器件的彩色显示对OLED显示器的显示质量具有非常大的影响。现有技术中，OLED显示器件的彩色显示主要通过以下两种方法，一种方法是通过精细金属掩膜板(Fine Metal Mask，FMM)制备具有红绿蓝三个子像素的OLED显示器件，进而实现彩色显示，但该方法受到FMM的限制，其分辨率无法提高，不能满足高分辨率的要求。此外，另一种方法是通过白光和RGB滤光片，这种方法不需要掩膜对位，即不受精细金属掩膜板的限制，但得到是色彩饱和度较低，色域不够广，目前采用白光和RGB滤光片制备得到的OLED显示器的色域仅为(美国)国家电视标准委员会标准色域的86％。
【发明内容】
有鉴于此，本发明提供一种OLED显示器件、其制备方法及OLED显示器，本发明的OLED显示器件能够提高其彩色显示的饱和度和色域。
为解决上述技术问题，本发明提出的一个技术方案是：提供一种OLED显示器件的制备方法，该制备方法包括：
利用湿法成膜的方式在基板上制备色彩转换层；在所述色彩转换层上方依次形成薄膜晶体管阵列、阳极、空穴注入层和空穴传输层、蓝绿光发光层、电子传输层、电子输入层和阴极；
其中，所述色彩转换层包括间隔设置的蓝光滤光单元、绿光转换单元以及 红光转换单元；所述绿光转换单元和红光转换单元均为由有机金属卤化物钙钛矿材料形成的膜层；
所述绿光转换单元和红光转换单元分别吸收所述蓝绿光发光层发出的蓝绿光，将所述蓝绿光分别转换为绿光和红光，所述蓝光滤光单元将所述蓝绿光过滤得到蓝光，从而实现彩色显示。
本发明还提出的一个技术方案：提供一种OLED显示器件，该显示器件包括：
基板，以及在所述基板上层叠设置的色彩转换层和蓝绿光发光层；
其中，所述色彩转换层包括间隔设置的蓝光滤光单元、绿光转换单元以及红光转换单元；所述绿光转换单元和红光转换单元均为由有机金属卤化物钙钛矿材料形成的膜层；
所述绿光转换单元和红光转换单元分别吸收所述蓝绿光发光层发出的蓝绿光，将所述蓝绿光分别转换为绿光和红光，所述蓝光滤光单元将所述蓝绿光过滤得到蓝光，从而实现彩色显示。
本发明还提出的另一个技术方案：提供一种OLED显示器，该OLED显示器包含OLED显示器件和驱动控制电路，所述驱动控制电路连接所述OLED显示器件，为所述OLED显示器件提供驱动信号和控制信号；
所述OLED显示器件包括：
基板，以及在所述基板上层叠设置的色彩转换层和蓝绿光发光层；
其中，所述色彩转换层包括间隔设置的蓝光滤光单元、绿光转换单元以及红光转换单元；所述绿光转换单元和红光转换单元均为由有机金属卤化物钙钛矿材料形成的膜层；
所述绿光转换单元和红光转换单元分别吸收所述蓝绿光发光层发出的蓝绿光，将所述蓝绿光分别转换为绿光和红光，所述蓝光滤光单元将所述蓝绿光过滤得到蓝光，从而实现彩色显示。
有益效果：区别于现有技术，本发明提供的OLED显示器件包括基板及其上叠置的色彩转换层和蓝绿光发光层；色彩转换层包括间隔设置的蓝光滤光单元、绿光转换单元以及红光转换单元；红光转换单元和绿光转换单元均为由有机金属卤化物钙钛矿材料形成的膜层。由于红光转换单元和绿光转换单元的材料为有机金属卤化物钙钛矿材料，具有高光致发光效率，因此红光转换单元和绿光转换单元分别吸收蓝绿光发光层发出的蓝绿光，将蓝绿光分别转换为饱和 度高的红光和绿光，蓝光滤光单元对蓝绿光进行滤光得到蓝光，进而使得色彩转换层能够输出具有高饱和度的彩色光，进行实现彩色显示，且提高其彩色显示的饱和度和增加其彩色显示的色域。
【附图说明】
图1是本发明OLED显示器件第一实施例的结构示意图；
图2是图1所示的OLED显示器件中色彩转换层的排列示意图；
图3是本发明OLED显示器件第二实施例的结构示意图；
图4是本发明OLED显示器件第三实施例的结构示意图；
图5a是图4所示的OLED显示器件中白光转换单元的第一实施例的结构示意图；
图5b是图4所示的OLED显示器件中白光转换单元的第二实施例的结构示意图；
图6是图4所示的OLED显示器件中色彩转换层一实施例的排列示意图；
图7是图4所示的OLED显示器件中色彩转换层，另一实施例的排列示意图；
图8是本发明OLED显示器件的一应用例的结构示意图。
【具体实施方式】
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图和具体实施例对本发明所提供的一种OLED显示器件、其制备方法及OLED显示器做进一步详细描述。在附图中，相同的标号在整个说明书和附图中用来表示相同的结构和区域。
参阅图1，图1是本发明OLED显示器件第一实施例的结构示意图。如图1所示，本实施例的OLED显示器件100包括基板11，以及在基板11上层叠设置的色彩转换层12和蓝绿光发光层15，色彩转换层12包括间隔设置的红光转换单元121、绿光转换单元122以及蓝光滤光单元123。红光转换单元121和绿光转换单元122均是由有机金属卤化物钙钛矿材料形成的膜层。可以理解的是，图1中将将色彩转换层12和蓝绿光发光层15之间的结构简化为第一结构14，将蓝绿光发光层15上方的结构简化为第二结构16。
用于制备红光转换单元121和绿光转换单元122的有机金属卤化物钙钛矿 材料是一类具有光电性能的半导体材料，其具备低体陷阱密度和高光致发光效率，能够通过改变其中的组分实现发光波长可调。同时，这类材料具备无机半导体的光电特性和有机材料的低温成膜特性。
本实施例中，利用蓝绿光发光层15发出饱和度较高的蓝绿光，红光转换单元121、绿光转换单元122分别吸收蓝绿光发光层15发出的蓝绿光，将该蓝绿光分别转换为红光和绿光，蓝光滤光单元123将该蓝绿光进行绿光处理，出射相应的蓝光。其中，红光转换单元121、绿光转换单元122和蓝光滤光单元123分别对应一像素，该像素包括红色子像素、绿色子像素和蓝色子像素。其中，红光转换单元121对应红色子像素、绿光转换单元122对应绿色子像素，蓝光滤光单元123对应蓝色子像素。红色子像素、绿色子像素和蓝色子像素分别对应一个TFT，以控制每个子像素分别对应的红光转换单元121、绿光转换单元122和蓝光滤光单元123，进而实现对三种基色光的显示，实现彩色显示。
参阅图2，图2是图1所示的OLED显示器件100中色彩转换层12的排列示意图。如图2所示，色彩转换层12中每相邻的两行红光转换单元121、绿光转换单元122和蓝光滤光单元123的排列方式相同，每行红光转换单元121、绿光转换单元122和蓝光滤光单元123沿水平方向从左至右依次间隔设置。
本发明中，红光转换单元和绿光转换单元均是对同一蓝绿光发光层发出的蓝绿光进行吸收并进行相应转换，不需要通过精细金属掩膜板制作三基色的子像素，即不会受到精细金属掩膜板的限制，能够根据需求提高其分辨率，且制备过程简单，能够降低OLED显示器件的制备成本。此外，由于红光转换单元和绿光转换单元是对蓝绿光进行吸收，通过有机金属卤化物钙钛矿材料对吸收的蓝绿光进行波长调节，不同于利用RGB滤光片对白光进行滤光得到红、绿、蓝三色光的方式，不会降低出射光的饱和度。因此本实施例的OLED显示器件能够满足分辨率需求的同时，提高彩色显示的饱和度和增大彩色显示的色域。基于有机金属卤化物钙钛矿材料的特性，制备得到的OLED显示器件具备较薄的器件厚度，且能够应用在大尺寸OLED显示器中。
具体的，用于制备红光转换单元121和绿光转换单元122的有机金属卤化物钙钛矿材料为含有一种有机金属卤化物钙钛矿材料的单一材料，或含有多种有机金属卤化物钙钛矿材料的混合材料。进一步的，有机金属卤化物钙钛矿材料的结构式为CH3NH3PbA3，其中，A为氯元素、溴元素和碘元素中的至少一种元素。
蓝光滤光单元123为使用量子点材料或者LCD中常使用的有机材料形成的膜层。
红光转换单元121、绿光转换单元122和蓝光滤光单元123均可以利用湿法成膜的方式在基板上形成相应膜层。三者的膜层的厚度均在10纳米至200纳米之间。红光转换单元121的厚度、绿光转换单元122的厚度以及蓝光滤光单元123的厚度均相同。
蓝绿光发光层15包括有机主体材料和蓝绿光发光有机客体材料，即将有机主体材料和蓝绿光发光有机客体材料按一定质量比进行掺杂。可以通过改变蓝绿光发光有机客体材料的掺杂比例，使蓝绿光发光层15发出高亮度、高饱和度的蓝绿光。
进一步的，蓝绿光发光层15的蓝绿光发光有机客体材料可以为有机荧光材料或有机磷光材料，有机主体材料可以为蒽类衍生物或宽带隙有机材料。蓝绿光发光层15中有机主体材料和蓝绿光发光有机客体材料的掺杂质量比会影响其发光效率以及发蓝绿光的饱和度，可选的，有机主体材料和蓝绿光发光有机客体材料的掺杂质量比为1∶0.01～1∶1。其中，蓝绿光发光有机客体材料掺杂质量比的比重越大，蓝绿光发光层15发出的蓝绿光的饱和度也会随之增加。此外，蓝绿光发光有机客体材料可以为单一一种蓝绿光发光材料，也可以是蓝光发光材料和绿光发光材料的混合材料。
参阅图3，图3是本发明OLED显示器件第二实施例的结构示意图。如图3所示，本实施例的OLED显示器件200同样包括基板11，以及在基板11上层叠设置的色彩转换层12和蓝绿光发光层15。
本实施例中的蓝绿光发光层15与图1所示的OLED显示器件100中的蓝绿光发光层15相同，此处不再赘述。
本实施例中的色彩转换层12包括间隔设置的红光转换单元121、绿光转换单元122以及蓝光滤光单元123。其中，红光转换单元121上方还包括绿光转换子单元124。红光转换单元121、绿光转换单元122和绿光转换子单元124均为由有机金属卤化物钙钛矿材料形成的膜层。
本实施例中，红光转换单元121上方的绿光转换子单元124吸收蓝绿光发光层15发出的蓝绿光，并将蓝绿光转换为绿光，该绿光再经过红光转换单元121，使红色转换单元121出射红光；绿光转换单元122吸收蓝绿光发光层15发出的蓝绿光，并将蓝绿光转换为绿光；蓝光滤光单元123将蓝绿光发光层15发出的 蓝绿光进行过滤得到蓝光，从而使OLED显示器件实现彩色显示。
可以理解的是，本实施例中红光转换单元121、绿光转换单元122和蓝光滤光单元123的排列方式与图3所示的排列方式相同。
本实施例中，红光转换单元121、绿光转换单元122和绿光转换子单元124均可以利用湿法成膜的方式形成相应膜层。绿光转换单元122的厚度可以在10纳米至200纳米之间。红光转换单元121和绿光转换子单元124叠置，且两者的厚度之和与绿光转换单元122的厚度相同。蓝光滤光单元123同样可以采用湿法成膜的方式形成相应膜层，其厚度与绿光转换单元122的厚度相同，也在10纳米至200纳米之间。
进一步的，参阅图4，图4是本发明OLED显示器件第三实施例的结构示意图。本实施例是在图1所示的OLED显示器件100的第一实施例的基础上改进得到。如图4所示，本实施例的OLED显示器件300包括基板11，以及在基板11上层叠设置的色彩转换层12和蓝绿光发光层15。色彩转换层12包括间隔设置的红光转换单元121、绿光转换单元122和蓝光滤光单元123，此外，色彩转换层12还包括白光转换单元125。
本实施例中，蓝绿光发光层15、红光转换单元121、绿光转换单元122和蓝光滤光单元123分别与图1所示的OLED显示器件第一实施例中的结构相同，此处不再赘述。不同之处在于，白光转换单元125与红光转换单元121、绿光转换单元122或蓝光滤光单元123相邻设置。
如图5a所示，白光转换单元125包括相邻设置的开口子单元1251、红光转换子单元1252。进一步的，白光转换单元125中的开口子单元1251、红光转换子单元1252之间紧密相连，没有空隙。红光转换子单元1252吸收蓝绿光发光层发出的蓝绿光，并分别将该蓝绿光转换红光，开口子单元1251透射蓝绿光发光层发出的蓝绿光；开口子单元1251、红光转换子单元1252同时工作，即可将蓝绿光发光层发出的蓝绿光转换为白光，进而提高OLED显示器件的发光亮度，提高显示质量。
此外，如图5b所示，白光转换单元125中的红光转换子单元1253上方还包括绿光转换子单元1253。该绿光转换子单元1253吸收蓝绿光发光层发出的蓝绿光，将该蓝绿光转换为绿光，再通过红光转换子单元1252将该绿光转换为红光。同样能够将蓝绿光发光层发出的蓝绿光转换为白光，进而提高OLED显示器件的发光亮度，提高显示质量。
在上述OLED显示器件的第三实施例中，红光转换单元、绿光转换单元、蓝光滤光单元和白光转光单元分别对应一像素。参阅图6，图6是图4所示的OLED显示器件300中色彩转换层12的排列示意图。如图6所示，色彩转换层12中每相邻的两行红光转换单元121、绿光转换单元122、蓝光滤光单元123和白光转换单元125的排列方式相同，每行红光转换单元121、绿光转换单元122、蓝光滤光单元123和白光转换单元125沿水平方向从左至右依次间隔设置。此外，参阅图7，本实施例中，红光转换单元121、绿光转换单元122、蓝光滤光单元123和白光转光单元125还可以呈阵列排布，即红光转换单元121、绿光转换单元122、蓝光滤光单元123和白光转光单元125沿顺时针方向依次间隔设置。此外，红光转换单元121、绿光转换单元122、蓝光滤光单元123和白光转光单元125还可以沿逆时针方向依次间隔设置。
由此说明，本发明的OLED显示器件的显示效果与色彩转换层中的各个转换单元的排布无关，可应用于不同像素排列方式的OLED显示器件。
参阅图8，图8是本发明OLED显示器件的一应用例的结构示意图，本实施例中第一结构14包括依序叠置的薄膜晶体管阵列141、阳极142、空穴注入层143和空穴传输层144。第二结构16包括依序叠置的电子传输层161、电子输入层162和阴极163。
具体的，基板为透明材质，可以为玻璃板或塑胶等。
薄膜晶体管阵列141包含半导体层、绝缘层、源极、漏极和栅极。
阳极142为透明导电金属氧化物，如铟锡氧化物(ITO)或铟锌氧化物(IZO)导电薄膜。阳极142的膜层厚度可以为20纳米。
空穴注入层143可以是有机小分子空穴注入材料、聚合物空穴注入材料或金属氧化物空穴注入材料。空穴注入层143的膜层厚度在1纳米至100纳米之间。
空穴传输层144可以是有机小分子空穴传输材料或聚合物空穴传输材料。空穴传输层144的膜层厚度在10纳米至100纳米之间。
电子传输层161可以是金属配合物材料或咪唑类电子传输材料。电子传输层161的膜层厚度在10纳米至100纳米之间。
电子注入层可以是金属配合物或者碱土金属及其盐类等。电子注入层的膜层厚度在0.5纳米到10纳米之间。
阴极163材料为低功函金属材料，如锂、镁、钙、锶、镧、铈、铕、镱、 铝、铯、铷、银等金属材料或者这些金属材料的合金；上述的低功函金属材料可以单独使用，也可两种或者更多种组合使用。阴极163的膜厚在10纳米到1000纳米之间。
其中，薄膜晶体管阵列141、阳极142、空穴注入层143、空穴传输层144、电子传输层161、电子注入层以及阴极163均可使用溅射、真空蒸镀等方式形成相应膜层。
此外，如图9所示，OLED显示器件还包括封装结构，本实施例的封装结构包括盖板17和封装胶材18。其中，盖板17在阴极163上方，封装胶材18在OLED显示元件四周。通过封装胶材18和盖板17对OLED显示元件进行封装。盖板17为玻璃盖板或柔性材料盖板。封装胶材18为环氧树脂胶或紫外固化胶。
可以理解的是，本实施例的OLED显示器件的封装结构仅是一种应用例，并不是对OLED显示器件的封装结构的限定；OLED显示器件的封装结构还可以为交替叠置的阻挡层和缓冲层形成的封装结构等其他封装结构。
本发明还提出一种OLED显示器，该OLED显示器中的OLED显示器件可以是图1、图3或图4中任意一种OLED显示器件，此处不再赘述。
以上仅为本发明的实施例，并非因此限制本发明的专利保护范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围。

Claims (20)

  1. 一种OLED显示器件的制备方法，其中，包括：
    利用湿法成膜的方式在基板上制备色彩转换层；在所述色彩转换层上方依次形成薄膜晶体管阵列、阳极、空穴注入层和空穴传输层、蓝绿光发光层、电子传输层、电子输入层和阴极；
    其中，所述色彩转换层包括间隔设置的蓝光滤光单元、绿光转换单元以及红光转换单元；所述绿光转换单元和红光转换单元均为由有机金属卤化物钙钛矿材料形成的膜层；
    所述绿光转换单元和红光转换单元分别吸收所述蓝绿光发光层发出的蓝绿光，将所述蓝绿光分别转换为绿光和红光，所述蓝光滤光单元将所述蓝绿光过滤得到蓝光，从而实现彩色显示。
  2. 根据权利要求1所述的制备方法，其中，所述膜层的厚度范围为[10nm，200nm]。
  3. 根据权利要求1所述的制备方法，其中，所述有机金属卤化物钙钛矿材料为含有一种有机金属卤化物钙钛矿材料的单一材料，或含有多种有机金属卤化物钙钛矿材料的混合材料；
    所述有机金属卤化物钙钛矿材料的结构式为CH3NH3PbA3，其中，A为氯元素、溴元素和碘元素中的至少一种元素。
  4. 根据权利要求1所述的制备方法，其中，所述蓝光发光层包括有机主体材料和蓝光发光有机客体材料，所述有机主体材料和所述蓝光发光有机客体材料的掺杂质量比为1∶0.01～1∶1。
  5. 根据权利要求1所述的制备方法，其中，所述蓝光发光有机客体材料为有机荧光材料，所述有机主体材料为蒽类衍生物或宽带隙有机材料；或
    所述蓝光发光有机客体材料为有机磷光材料，所述有机主体材料为宽带隙有机材料。
  6. 一种OLED显示器件，其中，包括：
    基板，以及在所述基板上层叠设置的色彩转换层和蓝绿光发光层；
    其中，所述色彩转换层包括间隔设置的蓝光滤光单元、绿光转换单元以及红光转换单元；所述绿光转换单元和红光转换单元均为由有机金属卤化物钙钛矿材料形成的膜层；
    所述绿光转换单元和红光转换单元分别吸收所述蓝绿光发光层发出的蓝绿光，将所述蓝绿光分别转换为绿光和红光，所述蓝光滤光单元将所述蓝绿光过滤得到蓝光，从而实现彩色显示。
  7. 根据权利要求6所述的OLED显示器件，其中，还包括依次叠置在所述色彩转换层和所述蓝绿光发光层之间的薄膜晶体管阵列、阳极、空穴注入层和空穴传输层，以及依次叠置在所述蓝绿光发光层上方的电子传输层、电子注入层和阴极。
  8. 根据权利要求6所述的OLED显示器件，其中，所述色彩转换层还包括白光转换单元，所述白光转换单元包括同层设置的空白透光子单元和红光转换子单元；所述红光转换子单元吸收所述蓝绿光发光层发出的蓝绿光，将所述蓝绿光转换为红光，所述空白透光子单元透过的所述蓝绿光，进而将所述蓝绿光发光层发出的蓝绿光转换为白光。
  9. 根据权利要求8所述的OLED显示器件，其中，所述色彩转换层中的所述蓝光滤光单元、绿光转换单元、红光转换单元以及白光转换单元之间呈顺序排列或呈阵列排列。
  10. 根据权利要求6所述的OLED显示器件，其中，所述红光转换单元上还设置有一绿光转换单元。
  11. 根据权利要求6所述的OLED显示器件，其中，所述膜层的厚度范围为[10nm，200nm]。
  12. 根据权利要求6所述的OLED显示器件，其中，所述有机金属卤化物钙钛矿材料为含有一种有机金属卤化物钙钛矿材料的单一材料，或含有多种有机金属卤化物钙钛矿材料的混合材料；
    所述有机金属卤化物钙钛矿材料的结构式为CH3NH3PbA3，其中，A为氯元素、溴元素和碘元素中的至少一种元素。
  13. 根据权利要求6所述的OLED显示器件，其中，所述蓝绿光发光层包括有机主体材料和蓝绿光发光有机客体材料，所述有机主体材料和所述蓝绿光发光有机客体材料的比例为1∶0.01～1∶1；
    其中，所述蓝绿光发光有机客体材料为有机荧光材料或有机磷光材料，所述有机主体材料为蒽类衍生物或宽带隙有机材料。
  14. 根据权利要求6所述的OLED显示器件，其中，所述蓝绿光发光有机客体材料为单一蓝绿光发光材料；或包含有蓝光发光材料和绿光发光材料的混合 材料。
  15. 一种OLED显示器，其中，包含OLED显示器件和驱动控制电路，所述驱动控制电路连接所述OLED显示器件，为所述OLED显示器件提供驱动信号和控制信号；
    所述OLED显示器件包括：
    基板，以及在所述基板上层叠设置的色彩转换层和蓝绿光发光层；
    其中，所述色彩转换层包括间隔设置的蓝光滤光单元、绿光转换单元以及红光转换单元；所述绿光转换单元和红光转换单元均为由有机金属卤化物钙钛矿材料形成的膜层；
    所述绿光转换单元和红光转换单元分别吸收所述蓝绿光发光层发出的蓝绿光，将所述蓝绿光分别转换为绿光和红光，所述蓝光滤光单元将所述蓝绿光过滤得到蓝光，从而实现彩色显示。
  16. 根据权利要求15所述的OLED显示器，其中，还包括依次叠置在所述色彩转换层和所述蓝绿光发光层之间的薄膜晶体管阵列、阳极、空穴注入层和空穴传输层，以及依次叠置在所述蓝绿光发光层上方的电子传输层、电子注入层和阴极。
  17. 根据权利要求15所述的OLED显示器，其中，所述色彩转换层还包括白光转换单元，所述白光转换单元包括同层设置的空白透光子单元和红光转换子单元；所述红光转换子单元吸收所述蓝绿光发光层发出的蓝绿光，将所述蓝绿光转换为红光，所述空白透光子单元透过的所述蓝绿光，进而将所述蓝绿光发光层发出的蓝绿光转换为白光。
  18. 根据权利要求17所述的OLED显示器，其中，所述色彩转换层中的所述蓝光滤光单元、绿光转换单元、红光转换单元以及白光转换单元之间呈顺序排列或呈阵列排列。
  19. 根据权利要求15所述的OLED显示器，其中，所述红光转换单元上还设置有一绿光转换单元。
  20. 根据权利要求15所述的OLED显示器，其中，所述膜层的厚度范围为[10nm，200nm]。
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