WO2023050304A1 - 显示基板、显示装置及显示基板的制备方法 - Google Patents

显示基板、显示装置及显示基板的制备方法 Download PDF

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WO2023050304A1
WO2023050304A1 PCT/CN2021/122157 CN2021122157W WO2023050304A1 WO 2023050304 A1 WO2023050304 A1 WO 2023050304A1 CN 2021122157 W CN2021122157 W CN 2021122157W WO 2023050304 A1 WO2023050304 A1 WO 2023050304A1
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layer
inorganic
light
structure layer
substrate
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PCT/CN2021/122157
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English (en)
French (fr)
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姚阳
张陶然
刘畅畅
周炟
莫再隆
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京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Priority to CN202180002783.5A priority Critical patent/CN116210364A/zh
Priority to PCT/CN2021/122157 priority patent/WO2023050304A1/zh
Publication of WO2023050304A1 publication Critical patent/WO2023050304A1/zh

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  • Embodiments of the present disclosure relate to but are not limited to the field of display technology, and specifically relate to a display substrate, a display device, and a method for preparing a display substrate.
  • AMOLED Active matrix organic light-emitting diodes
  • An embodiment of the present disclosure provides a display substrate, including a driving circuit layer, a light-emitting structure layer, and a packaging structure layer stacked on a substrate in sequence;
  • the driving circuit layer includes a pixel driving circuit
  • the light-emitting structure layer includes a A light-emitting element connected to a driving circuit, the light-emitting element includes an anode, an organic functional layer and a cathode stacked in sequence along a direction away from the substrate
  • the packaging structure layer includes a first layer stacked in sequence along a direction away from the substrate An inorganic structure layer, an organic layer, and a second inorganic structure layer;
  • the refractive index of the first inorganic structure layer decreases gradually along the direction away from the substrate, or, the refractive index of the first inorganic structure layer decreases along the direction away from the substrate
  • the direction of the substrate first gradually increases and then gradually decreases;
  • the refractive index of the first inorganic structure layer varies from 1.51 to 1.74,
  • An embodiment of the present disclosure also provides a display device, including the display substrate.
  • An embodiment of the present disclosure also provides a method for preparing a display substrate, including:
  • the driving circuit layer including a pixel driving circuit
  • a light-emitting structure layer is formed on the side of the driving circuit layer away from the substrate; wherein, the light-emitting structure layer includes a light-emitting element connected to the pixel driving circuit, and the light-emitting element includes light-emitting elements sequentially along a direction away from the substrate. stacked anode, organic functional layer and cathode;
  • An encapsulation structure layer is formed on the side of the light-emitting structure layer away from the substrate; wherein the encapsulation structure layer includes a first inorganic structure layer, an organic layer and a second inorganic structure stacked in sequence along a direction away from the substrate layer; the refractive index of the first inorganic structure layer gradually decreases along the direction away from the substrate, or, the refractive index of the first inorganic structure layer gradually increases and then gradually increases along the direction away from the substrate decrease; the refractive index of the first inorganic structure layer ranges from 1.51 to 1.74, and the refractive index of the second inorganic structure layer is greater than 1.74; the thickness of the first inorganic structure layer is 0.99 ⁇ m to 1.21 ⁇ m.
  • FIG. 1 is a schematic diagram of the film layer structure of a display substrate in some exemplary embodiments
  • FIG. 2 is a schematic cross-sectional structure diagram of the display substrate of FIG. 1 in some exemplary embodiments
  • Fig. 3 is a graph showing the variation of the transmittance of the first inorganic layer with different thicknesses to light of different wavelengths in some technologies
  • Figure 4a is a schematic diagram of the optical path of red light and green light passing through the encapsulation structure layer in the display substrate of some technologies
  • Fig. 4b is a schematic diagram of the light path of red light and green light passing through the encapsulation structure layer in the display substrate of some exemplary embodiments;
  • Figure 5a is a diagram of the attenuation change of the brightness of red light with the change of viewing angle for five coatings with different thicknesses;
  • Figure 5b shows that the cover layer thickness is The attenuation diagram of the brightness of red light, green light and blue light with the change of viewing angle;
  • Figure 5c shows that the cover layer thickness is The attenuation diagram of the brightness of red light, green light and blue light with the change of viewing angle;
  • Figure 6 is a graph showing the variation of JNCD with the viewing angle when the covering layer has five different thicknesses
  • FIG. 7 is a schematic plan view of a display substrate in some exemplary embodiments.
  • FIG. 1 is a schematic diagram of the film layer structure of a display substrate in some exemplary embodiments
  • the display substrate includes a driving circuit layer 102, a light emitting structure layer 103, and a package structure layer 104 stacked on a substrate 101 in sequence;
  • the driving circuit layer 102 includes a pixel A driving circuit
  • the light-emitting structure layer 103 includes a light-emitting element 310 connected to the pixel driving circuit, the light-emitting element 310 includes an anode 301, an organic functional layer, and a cathode 309 stacked in sequence along a direction away from the substrate 101
  • the encapsulation structure layer 104 includes a first inorganic structure layer 401, an organic layer 403, and a second inorganic structure layer 402 stacked in sequence along a direction away from the substrate 101; the refractive index of the first inorganic structure layer 401 varies along the The direction away from the substrate 101 gradually decreases, or, the refractive index of the first inorganic structure layer 401 gradually increases and then gradually decreases along the direction away from the substrate 101; the first inorganic
  • the refractive index of the first inorganic structure layer 401 is set to gradually decrease along the direction away from the substrate 101, or gradually increase and then gradually decrease along the direction away from the substrate 101. , and set the refractive index variation range of the first inorganic structure layer 401 to 1.51 to 1.74, and set the refractive index of the second inorganic structure layer 402 to be greater than 1.74, so that, on the one hand, it is beneficial to improve the light extraction efficiency of the display substrate and the brightness at the front viewing angle , on the other hand, by setting the thickness of the first inorganic structure layer 401 to 0.99 ⁇ m to 1.21 ⁇ m, it is beneficial to shift the emission direction of the green light emitted by the green sub-pixel of the display substrate to the front view direction, and improve the display under the front view angle.
  • the phenomenon of redness around the substrate improves the display effect.
  • the first inorganic structure layer 401 includes a first sub-inorganic layer 4011 and a second sub-inorganic layer 4012 stacked in sequence along a direction away from the substrate 101, so
  • the refractive index of the first sub-inorganic layer 4011 may be 1.68 to 1.74
  • the refractive index of the second sub-inorganic layer 4012 may be 1.57 to 1.68.
  • the material of the first inorganic structure layer 401 can be silicon oxynitride, and the ratio of nitrogen to oxygen in the silicon oxynitride forming the first sub-inorganic layer 4011 and the second sub-inorganic layer 4012 can be adjusted to adjust the second The refractive index of the first sub-inorganic layer 4011 and the second sub-inorganic layer 4012.
  • the material of the first inorganic structure layer 401 may be silicon oxynitride; the thickness of the first sub-inorganic layer 4011 may be 0.8 ⁇ m to 1.15 ⁇ m, and the The thickness of the second sub-inorganic layer 4012 may be 0.06 ⁇ m to 0.19 ⁇ m. In an example of this embodiment, the thickness of the first sub-inorganic layer 4011 is 1 ⁇ m, and the thickness of the second sub-inorganic layer 4012 is 0.1 ⁇ m. In this way, the transmittance of green light can be increased, the phenomenon of redness around the display substrate at a front viewing angle can be improved, and the display effect can be improved.
  • the packaging structure layer of the display substrate includes a first inorganic layer, an organic layer and a second inorganic layer stacked in sequence along the direction away from the substrate, wherein the thickness of the first inorganic layer is about 1 ⁇ m
  • the first inorganic layer of the packaging structure layer is equivalent to a small microcavity, which has reflection, refraction and absorption of light, and the transmittance of the first inorganic layer with a thickness of 1 ⁇ m to green light is 92%. , the transmittance of red light is 95%.
  • the thickness of the first inorganic layer is 0.99 ⁇ m to 1.21 ⁇ m, that is, the thickness of the first inorganic structure layer 401 in the embodiment of the present disclosure is set to be 0.99 ⁇ m to 1.21 ⁇ m.
  • the inventors of the present disclosure also found that at the periphery of the display module, the red light and the green light are emitted through the first inorganic layer 401', the organic layer 403' and the second inorganic layer 402' of the encapsulation structure layer in sequence. Finally, the outgoing direction of the red light and the green light deviate from the front view direction, as shown in Figure 4a, which is a schematic diagram of the optical path of the red light and the green light passing through the packaging structure layer in the display substrate of some technologies.
  • the thickness of the first inorganic structure layer 401 of the encapsulation structure layer 104 is set to 0.99 ⁇ m to 1.21 ⁇ m, and
  • the refractive index of the first inorganic structure layer 401 is set to gradually decrease along the direction away from the substrate 101, or first gradually increase and then gradually decrease along the direction away from the substrate 101, and the first inorganic structure layer
  • the changing range of the refractive index of 401 is set from 1.51 to 1.74, thereby increasing the transmittance of the green light through the encapsulation structure layer 104, and shifting the outgoing direction of the green light to the front view direction (as shown in FIG.
  • FIG. 4b is a schematic diagram of the optical path of red light and green light passing through the encapsulation structure layer in the display substrate of some exemplary embodiments), increasing the proportion of green light emitted from the edge position around the display module, so that the surrounding area of the display module can be improved under the front viewing angle. Reddish phenomenon, improve the display effect.
  • the first inorganic structure layer 401 may further include a third sub-inorganic layer disposed on the side of the first sub-inorganic layer 4011 facing the substrate 101, the third sub-inorganic layer The layer may have a refractive index of 1.51 to 1.72. In this way, the refractive index of the first inorganic structure layer 401 in this embodiment first increases and then decreases along the direction away from the substrate 101 , which is beneficial to improve the light extraction efficiency and the brightness of the front viewing angle of the display substrate.
  • the embodiment of the present disclosure may not limit the number of layers of the first inorganic structure layer 401. In other implementation manners, the number of layers of the first inorganic structure layer 401 may be more than three, and a single layer in the first inorganic structure layer 401 The thickness of the film layer may be 0.05 ⁇ m.
  • the refractive index of the second inorganic structure layer 402 may be 1.74 to 1.88.
  • the refractive index of the second inorganic structure layer 402 may be 1.82 to 1.84, such as 1.83; or, the refractive index of the second inorganic structure layer 402 may gradually increase along the direction away from the substrate 101 big.
  • the material of the second inorganic structure layer 402 may be silicon nitride, and the thickness of the second inorganic structure layer 402 may be 0.55 ⁇ m to 0.85 ⁇ m.
  • the thickness of the organic layer 403 may be 7.2 ⁇ m to 12.5 ⁇ m.
  • the organic layer 403 can be prepared by an inkjet printing process. During the inkjet printing process, the leveling speed of the material forming the organic layer 403 can be adjusted to improve the inkjet printing quality and reduce the incidence of color defects such as color mixing.
  • the refractive index of the organic layer 403 may be 1.1 to 1.3.
  • the display substrate may further include a cover layer (CPL) 105 disposed on the surface of the cathode 309 away from the substrate 101 , the cover
  • the thickness of layer 105 can be to Exemplarily, the thickness of the covering layer 105 can be to for example
  • the encapsulation structure layer 104 is disposed on a side of the cover layer 105 away from the substrate 101 .
  • the thickness of the cover layer 105 is set to to In this way, the color shift phenomenon of the display substrate can be improved.
  • the covering layer 105 can be made of inorganic or organic materials, and the refractive index of the covering layer 105 can be 1.1 to 1.2.
  • the encapsulation structure layer 104 is configured to shift the emission direction of the green light to the front view direction, so that the brightness of the green light will decrease at a viewing angle deviating from the front view direction , may cause the display substrate to appear reddish when the viewing angle deviates from the front viewing direction.
  • the inventors of the present disclosure have verified the attenuation of the luminance of different colors of light by the covering layer 105 of different thicknesses with the change of the viewing angle, and found that the attenuation speed of the luminance of red light by the covering layer 105 of different thicknesses is different with the change of the viewing angle.
  • the cover layer 105 has different attenuation speeds of the brightness of different colors of light as the viewing angle changes.
  • Fig. 5a is a graph showing the attenuation change of the brightness of red light by five different thicknesses of the covering layer 105 as the viewing angle changes
  • Fig. 5b is a graph showing the thickness of the covering layer 105 being The attenuation change diagram of the brightness of red light, green light and blue light with the change of viewing angle
  • Fig. 5c is a cover layer 105 with a thickness of The attenuation diagram of the brightness of red light, green light and blue light with the viewing angle.
  • the thickness of the covering layer 105 is When looking at the attenuation of the brightness of the red light as the viewing angle changes, it can be seen that the attenuation speed of the brightness of the red light varies with the change of the viewing angle of the covering layer 105 of different thicknesses.
  • the inventors of the present disclosure have verified the change of the color shift value (JNCD) with the viewing angle when the thickness of the covering layer 105 is different, as shown in FIG.
  • the change curve graph with the viewing angle the abscissa is the degree of the viewing angle, and the ordinate is the JNCD value.
  • the thickness of the covering layer 105 is When , the JNCD value shows a phenomenon of non-uniform increase and jumping with the change of viewing angle; the thickness of the covering layer 105 is When , the JNCD value gradually increases with the increase of the viewing angle, and the thickness of the covering layer 105 is When the JNCD value changes most slowly and uniformly with the increase of viewing angle.
  • the thickness of the covering layer 105 is set to to to The color shift phenomenon of the display substrate can be improved, and the display effect can be improved.
  • the display substrate may further include a protective layer 106 disposed on the surface of the cover layer 105 away from the substrate 101 , and the encapsulation structure layer 104 is disposed on the surface of the protective layer 106 away from the substrate 101;
  • the material of the protective layer 106 can be LiF, and the thickness of the protective layer 106 can be to Exemplarily, the thickness of the protective layer 106 can be to for example
  • the protective layer 106 can function to protect the covering layer 105 and can absorb water.
  • the refractive index of the protective layer 106 may be 1.1 to 1.3.
  • FIG. 7 is a schematic plan view of a display substrate in some exemplary embodiments, the display substrate includes a display area 100 and a non-display area located at the periphery of the display area 100 , peripheral edges of the first inorganic structure layer 401 , the organic layer 403 and the second inorganic structure layer 402 are all located in the non-display area.
  • the orthographic projection of the second inorganic structure layer 402 on the substrate 101 includes the orthographic projection of the first inorganic structure layer 401 on the substrate 101, and the first inorganic structure layer 401 is on the substrate 101
  • the orthographic projection of includes the orthographic projection of the organic layer 403 on the substrate 101 .
  • the encapsulation structure layer 104 can more effectively prevent external water and oxygen from intruding into the interior of the display substrate and protect the light emitting elements.
  • the non-display area may include an isolation dam 201, and the isolation dam 201 is arranged on a side of the organic layer 403 away from the display area 100, the Circumferential edges of the first inorganic structure layer 401 and the second inorganic structure layer 402 are disposed on a side of the isolation dam 201 away from the display area 100 .
  • One or more isolation dams 201 can be provided, and two isolation dams 201 are provided in the example of FIG. 7 .
  • the organic layer 403 can be formed by an inkjet printing process, and the isolation dam 201 can block the overflow of the ink forming the organic layer 403 during the process of forming the organic layer 403 .
  • the isolation dam may be formed on a low voltage power supply line (VSS).
  • the non-display area may include a gate drive circuit (GOA), and the orthographic projection of the organic layer 403 on the substrate includes the gate drive circuit in Orthographic projection on the base.
  • GOA gate drive circuit
  • the display substrate includes a display area, the display area includes a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B, and each sub-pixel includes a light emitting element 310, the light-emitting element 310 may be an organic electroluminescent diode (that is, an OLED device); the total thickness of all film layers located between the anode 301 and the cathode 309 in the OLED device of the red sub-pixel R may be to The total thickness of all film layers located between the anode 301 and the cathode 309 in the OLED device of the green sub-pixel G may be to The total thickness of all film layers located between the anode 301 and the cathode 309 in the OLED device of the blue sub-pixel B may be to
  • the total thickness of all film layers between the anode 301 and the cathode 309 in the OLED device of the red sub-pixel, green sub-pixel and blue sub-pixel is set to the above-mentioned thickness, so that the anode 301 and the cathode 309 of the OLED device.
  • an optical microcavity structure is formed between the cathodes 309, the light emitting spectrum of the light emitting layer of the OLED device can be narrowed by using the microcavity effect, and the luminous intensity of the light of the target wavelength can be enhanced, which is conducive to improving the color purity and color of the OLED device. strength.
  • FIG. 2 illustrates three sub-pixels, which are red sub-pixel R, green sub-pixel G and blue sub-pixel B, respectively.
  • the light-emitting element (example is an OLED device) 310 includes an anode 301, a light-emitting layer 3051 and a cathode 309 stacked in sequence along a direction away from the substrate 101, and the organic functional layer includes Light emitting layer 3051.
  • any one or more of the following film layers may also be arranged between the anode 301 and the luminescent layer 3051: a hole injection layer 302, a hole transport layer 303, an electron blocking layer 3041; the luminescent layer 3051 and the Any one or more of the following film layers can also be arranged between the cathodes 309: hole blocking layer 306, electron transport layer 307, electron injection layer 308; any of the following film layers in the display area can be connected as an integrated structure and cover
  • the display area a hole injection layer 302 , a hole transport layer 303 , a hole blocking layer 306 , an electron transport layer 307 , an electron injection layer 308 and a cathode 309 .
  • the hole injection layer 302 of all sub-pixels in the display area can be connected as an integrated structure and cover the display area, and the hole injection layer 302 can be called a common layer.
  • the hole transport layer 303, the hole The blocking layer 306, the electron transport layer 307, the electron injection layer 308 and the cathode 309 may all be common layers. All film layers located between the anode 301 and the cathode 309 in the light emitting element 310 can be referred to as organic functional layers.
  • the light emitting element (for example, an OLED device) 310 of each sub-pixel in the display area includes an anode 301 stacked in sequence along a direction away from the substrate 101 , a hole injection layer 302, a hole transport layer 303, an electron blocking layer (in the example of FIG. The electron blocking layer is 3043), the light-emitting layer (the light-emitting layer of the red sub-pixel R is 3051 in the example of FIG. layer 306 , electron transport layer 307 , electron injection layer 308 and cathode 309 .
  • the light-emitting layer and the electron blocking layer of the OLED device of each sub-pixel in the display area may be unique to the sub-pixel, and may not be shared with other sub-pixels.
  • the light emitting layer and the electron blocking layer of sub-pixels of different colors may be different.
  • all the films in the OLED device between the anode 301 and the cathode 309 can be adjusted by adjusting the thickness of the unique film layers of the OLED device (such as the light emitting layer and the electron blocking layer) for each color sub-pixel
  • the total thickness of the layer (microcavity length) to satisfy the microcavity interference conditions.
  • the thickness of the hole injection layer 302 can be to
  • the material of the hole injection layer 302 can be a p-type doped hole transport material, and the doping ratio can be 1%.
  • the function of the hole injection layer 302 is to lower the hole injection barrier and improve the hole injection efficiency.
  • the thickness of the hole transport layer 303 can be to
  • the material of the hole transport layer 303 and the material of the electron blocking layer may both include hole transport materials containing groups such as aniline, arylamine, carbazole, fluorene or spirofluorene, for example: 4,4'-bis [N-(1-naphthyl)-N-phenylamino]biphenyl (NPB), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1 '-biphenyl]-4,4'-diamine (TPD), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (BAFLP), 4,4'-bis [N-(9,9-Dimethylfluoren-2-yl)-N-phenylamino]biphenyl (DFLDPBi), 4,4'-bis(9-carbazolyl)biphenyl (CBP
  • the thickness of the hole blocking layer 306 can be to
  • the material of the hole blocking layer 306 may include electron transport materials containing groups such as triazine, oxazine, carbazole or nitrile groups, such as BAlq (bis(2-methyl-8-quinolyl)-4 - (phenylphenol) aluminum).
  • the hole blocking layer 306 can block holes and excitons in the light-emitting layer from migrating to the side where the cathode 309 is located, thereby improving luminous efficiency.
  • the thickness of the electron transport layer 307 can be to Electron transport layer 307 can be the mixed film of electron transport material and 8-hydroxyquinolate lithium (Liq), and electron transport material can be nitrogen-containing heterocyclic compounds, such as Bphen (, 7-diphenyl-1,10-phenanthrene roline), TPBi (1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene), etc.
  • the electron transport layer 307 can increase the electron transport rate.
  • the thickness of the electron injection layer 308 can be to
  • the electron injection layer 308 can be made of lithium fluoride (LiF), ytterbium (Yb), magnesium (Mg) or calcium (Ca).
  • the electron injection layer 308 can lower the electron injection barrier and improve the electron injection efficiency.
  • the thickness of the light-emitting layer 3051 in the OLED device of the red sub-pixel is d1
  • the thickness of the light-emitting layer 3052 in the OLED device of the green sub-pixel is d2
  • the thickness of the light-emitting layer 3052 in the OLED device of the blue sub-pixel is d2.
  • the thickness of the light emitting layer 3053 is d3, wherein, d1>d2>d3.
  • the materials of the light-emitting layer in the OLED device of each sub-pixel may include host material and dopant material.
  • the thickness of the electron blocking layer 3041 in the OLED device of the red sub-pixel is D1
  • the thickness of the electron blocking layer 3042 in the OLED device of the green sub-pixel is D2
  • the thickness of the OLED device of the blue sub-pixel is D2.
  • the thickness of the electron blocking layer 3043 in the device is D3, wherein, D1>D2>D3.
  • the anode 301 of the OLED device may use a material with a high work function.
  • the anode 301 can adopt a composite film structure of a metal layer and a transparent oxide layer with high reflectivity, such as Ag/ITO (silver/indium tin oxide), Ag/IZO (silver/indium zinc oxide) or ITO/Ag/ITO etc.
  • the anode 301 uses ITO/Ag/ITO, wherein the thickness of the three film layers can be
  • the material of the cathode 309 of the OLED device may be magnesium (Mg), silver (Ag) or aluminum (Al), or an alloy material, such as an alloy of Mg:Ag.
  • the cathode 309 is made of an alloy of Mg:Ag, the ratio of Mg to Ag is 9:1, and the thickness of the cathode 309 can be to
  • the cathode 309 can be formed by evaporation process.
  • the anode 301 uses ITO/Ag/ITO, wherein the thickness of the three film layers can be The thickness of the hole transport layer 303 can be The thickness of other film layers can be the same as the previous embodiment.
  • some film layer parameters of the display substrate may be shown in Table 2.
  • the display substrates of the two examples in Table 1 and Table 2 have improved the phenomenon of redness around the display substrate of some technologies and the phenomenon of color shift under the condition of front view, and there is no color mixing, dark lines, bright lines, dark spots, and bright spots Wait bad.
  • the substrate 101 may be a flexible substrate, or may be a rigid substrate.
  • the flexible substrate may include a stacked first flexible material layer, a first inorganic material layer, a bonding layer, a second flexible material layer and a second inorganic material layer, and the materials of the first flexible material layer and the second flexible material layer may be Materials such as polyimide (PI), polyethylene terephthalate (PET) or through surface-treated polymer soft film, the material of the first inorganic material layer and the second inorganic material layer can adopt silicon nitride ( SiNx) or silicon oxide (SiOx), etc., are used to improve the water and oxygen resistance of the substrate, and the material of the bonding layer can be amorphous silicon (a-si).
  • PI polyimide
  • PET polyethylene terephthalate
  • SiNx silicon nitride
  • SiOx silicon oxide
  • the material of the bonding layer can be amorphous silicon (a-si).
  • the driving circuit layer 102 may include a plurality of transistors and storage capacitors constituting a pixel driving circuit.
  • each pixel driving circuit includes one driving transistor 210 and one The storage capacitor 211 is illustrated as an example.
  • the driving circuit layer 102 may include: a first insulating layer disposed on the substrate 101; an active layer disposed on the first insulating layer; a second insulating layer covering the active layer; disposed on The gate electrode and the first capacitance electrode on the second insulating layer; the third insulating layer covering the gate electrode and the first capacitance electrode; the second capacitance electrode arranged on the third insulation layer; the fourth insulation covering the second capacitance electrode layer, the second insulating layer, the third insulating layer and the fourth insulating layer are provided with via holes, and the via holes expose the active layer; the source electrode and the drain electrode arranged on the fourth insulating layer, the source electrode and the drain electrode are respectively Connect to the active layer through corresponding via holes; cover the planar layer of the aforementioned structure, and open a via hole on the planar layer, and the drain electrode is exposed through the via hole.
  • the active layer, the gate electrode, the source electrode and the drain electrode form the drive transistor 210 , and the first capacitor electrode and the first capacitor
  • the light emitting structure layer 103 may include an anode 301, a pixel definition layer 510, a cathode 309, and an organic functional layer located between the anode 301 and the cathode 309.
  • the organic functional layer includes at least Light-emitting layer (in the example of Fig. 2, the light-emitting layer of the red sub-pixel is 3051, the light-emitting layer of the green sub-pixel is 3052, and the light-emitting layer of the blue sub-pixel is 3053), and the organic functional layer can also include the hole injection layer 302 , a hole transport layer 303, an electron blocking layer (in the example of FIG.
  • the anode 301 is disposed on the flat layer of the driving circuit layer 102 and connected to the drain electrode of the driving transistor 210 through a via hole opened on the flat layer.
  • the pixel definition layer 510 is arranged on the side of the anode 301 away from the substrate 101, the pixel definition layer 510 is provided with a pixel opening, the pixel definition layer 510 covers the part of the surface of the anode 301 near the circumferential edge, and the pixel opening covers the rest of the surface of the anode 301 Partially exposed, the part of the surface of the anode 301 exposed by the pixel opening is sequentially stacked with multiple film layers of the organic functional layer and the cathode 309 .
  • the anode 301 , the organic functional layer and the cathode 303 of each sub-pixel form an OLED device, which is configured to emit light of a corresponding color under the driving of a corresponding pixel driving circuit.
  • the light emitting structure layer 103 may also include other film layers, such as spacer pillars disposed on the pixel definition layer 510 .
  • the preparation process of a display substrate may include the following operations:
  • a driving circuit layer 102 is formed on a substrate 101, and the driving circuit layer 102 includes a pixel driving circuit.
  • the preparation process of the driving circuit layer 102 may include:
  • a first insulating film and an active layer film are sequentially deposited on the substrate 101, and the active layer film is patterned by a patterning process to form a first insulating layer covering the substrate 101 and an active layer pattern disposed on the first insulating layer , the active layer pattern includes at least the active layer of each sub-pixel.
  • a second insulating film and a first metal film are deposited in sequence, and the first metal film is patterned by a patterning process to form a second insulating layer covering the pattern of the active layer, and a first gate metal layer disposed on the second insulating layer
  • the layer pattern, the first gate metal layer pattern at least includes the gate electrode and the first capacitor electrode of each sub-pixel.
  • a third insulating film and a second metal film are deposited in sequence, and the second metal film is patterned by a patterning process to form a third insulating layer covering the first gate metal layer, and a second gate electrode disposed on the third insulating layer.
  • the metal layer pattern, the second gate metal layer pattern at least includes the second capacitance electrode of each sub-pixel, and the position of the second capacitance electrode corresponds to the position of the first capacitance electrode.
  • the first capacitor electrode and the second capacitor electrode form a storage capacitor 211 .
  • a fourth insulating film is deposited, and the fourth insulating film is patterned by a patterning process to form a fourth insulating layer pattern covering the second gate metal layer, and at least two via holes are opened on the fourth insulating layer of each sub-pixel, The fourth insulating layer, the third insulating layer and the second insulating layer in the two via holes are etched away, exposing the surface of the active layer of each sub-pixel.
  • the third metal film is deposited, and the third metal film is patterned by a patterning process, and a source-drain metal layer pattern is formed on the fourth insulating layer.
  • the source-drain metal layer includes at least the source electrode and the drain electrode of each sub-pixel, and the source electrode The drain electrode and the drain electrode are respectively connected to the active layer through two via holes passing through the fourth insulating layer, the third insulating layer and the second insulating layer.
  • a flat thin film of organic material is coated on the substrate 101 on which the aforementioned pattern is formed, and a via hole is formed on the flat thin film of each sub-pixel through processes such as masking, exposure, and development, and the flat thin film in the via hole is developed. , exposing the surface of the drain electrode, thereby forming a planarization layer (PLN) covering the substrate 101 .
  • PPN planarization layer
  • the driving circuit layer 102 is prepared on the substrate 101 , as shown in FIG. 2 .
  • the active layer, the gate electrode, the source electrode and the drain electrode constitute the driving transistor 210 of the pixel driving circuit
  • the first capacitor electrode and the second capacitor electrode constitute the storage capacitor 211 of the pixel driving circuit.
  • the pixel driving circuit may use an active matrix driving method to drive the OLED device of each sub-pixel.
  • any one of silicon oxide (SiOx), silicon nitride (SiNx) and silicon oxynitride (SiON) can be used for the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer or multiple, can be a single layer, multi-layer or composite layer.
  • the first insulating layer may be called a buffer (Buffer) layer, which is used to improve the water and oxygen resistance of the substrate 101
  • the second insulating layer and the third insulating layer may be called a gate insulating (GI) layer
  • the fourth insulating layer may be called a Interlayer insulation (ILD) layer.
  • the first metal film, the second metal film and the third metal film can adopt metal materials, such as silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo) any one or Multiple, or alloy materials of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), can be single-layer structure or multi-layer composite structure, such as Ti/Al/Ti and the like.
  • metal materials such as silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo) any one or Multiple, or alloy materials of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb)
  • AlNd aluminum neodymium alloy
  • MoNb molybdenum niobium alloy
  • the active layer film can be made of amorphous indium gallium zinc oxide (a-IGZO), zinc oxynitride (ZnON), indium zinc tin oxide (IZTO), amorphous silicon (a-Si), polycrystalline silicon (p-Si) , Hexathiophene, polythiophene and other materials.
  • a-IGZO amorphous indium gallium zinc oxide
  • ZnON zinc oxynitride
  • IZTO indium zinc tin oxide
  • a-Si amorphous silicon
  • p-Si polycrystalline silicon
  • Hexathiophene polythiophene and other materials.
  • An anode layer is formed on a side of the driving circuit layer 102 away from the substrate 101 , and the anode layer includes a plurality of anodes 301 .
  • an anode film is deposited on the substrate 101 forming the aforementioned pattern, and the anode film is patterned by a patterning process to form an anode layer including a plurality of anodes 301, the anodes 301 are formed on the flat layer of the driving circuit layer 102, and passed The via hole on the flat layer is connected to the drain electrode of the driving transistor 210 .
  • the pixel definition layer 510 Coat the pixel definition film on the substrate 101 with the aforementioned pattern, and form a pixel definition layer 510 with pixel openings through processes such as masking, exposure, and development, wherein the pixel definition film in the pixel opening is developed to expose the corresponding
  • the surface of the anode 301 the pixel definition layer 510 covers the part of the surface of the anode 301 near the peripheral edge.
  • the material of the pixel definition layer 510 may be polyimide, acrylic or polyethylene terephthalate.
  • spacer posts (PS) may be formed on the pixel definition layer 510 .
  • the electron blocking layer of the blue sub-pixel is 3043
  • the light-emitting layer (3051 is the light-emitting layer including the red sub-pixel
  • the light-emitting layer of the green sub-pixel is 3052
  • the light-emitting layer of the blue sub-pixel is 3053
  • the hole blocking layer 306 is the hole blocking layer 306
  • electron transport layer 307 is the electron injection layer 308 and cathode 309 .
  • the first sub-inorganic layer 4011 and the second sub-inorganic layer 4012 of the first inorganic structure layer 401 , the organic layer 403 and the second inorganic structure layer 402 are sequentially formed on the surface of the protective layer 106 away from the substrate 101 .
  • the first inorganic structure layer 401 and the second inorganic structure layer 402 can be formed by chemical vapor deposition, and the organic layer 403 can be formed by inkjet printing process.
  • the encapsulation structure layer 104 can effectively prevent water and oxygen from intruding into the light-emitting structure layer 103 and protect the light-emitting element 310 .
  • an embodiment of the present disclosure also provides a method for preparing a display substrate, including:
  • the driving circuit layer including a pixel driving circuit
  • a light-emitting structure layer is formed on the side of the driving circuit layer away from the substrate; wherein, the light-emitting structure layer includes a light-emitting element connected to the pixel driving circuit, and the light-emitting element includes light-emitting elements sequentially along a direction away from the substrate. stacked anode, organic functional layer and cathode;
  • An encapsulation structure layer is formed on the side of the light-emitting structure layer away from the substrate; wherein the encapsulation structure layer includes a first inorganic structure layer, an organic layer and a second inorganic structure stacked in sequence along a direction away from the substrate layer; the refractive index of the first inorganic structure layer gradually decreases along the direction away from the substrate, or, the refractive index of the first inorganic structure layer gradually increases and then gradually increases along the direction away from the substrate decrease; the refractive index of the first inorganic structure layer ranges from 1.51 to 1.74, and the refractive index of the second inorganic structure layer is greater than 1.74; the thickness of the first inorganic structure layer is 0.99 ⁇ m to 1.21 ⁇ m.
  • An embodiment of the present disclosure further provides a display device, comprising the display substrate described in any one of the foregoing embodiments.
  • the display device can be any product or component with a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, and the like.
  • parallel refers to a state where the angle formed by two straight lines is -10° or more and 10° or less, and thus includes a state where the angle is -5° or more and 5° or less.
  • perpendicular refers to a state where the angle formed by two straight lines is 80° to 100°, and thus includes an angle of 85° to 95°.
  • connection means a fixed connection, or a detachable connection, or Connected integrally;
  • mounted means “connected”, and “fixedly connected” may be directly connected, indirectly connected through an intermediary, or internally connected between two components.

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Abstract

显示基板、显示装置及显示基板的制备方法，所述显示基板包括设于基底上的发光元件，以及设于发光元件的远离基底一侧的封装结构层；所述封装结构层包括沿远离所述基底的方向依次叠设的第一无机结构层、有机层和第二无机结构层；所述第一无机结构层的折射率在沿远离所述基底的方向逐渐减小，或者，所述第一无机结构层的折射率在沿远离所述基底的方向先逐渐增大后逐渐减小；所述第一无机结构层的折射率变化范围为1.51至1.74，所述第二无机结构层的折射率大于1.74；所述第一无机结构层的厚度为0.99μm至1.21μm。

Description

显示基板、显示装置及显示基板的制备方法 技术领域
本公开实施例涉及但不限于显示技术领域，具体涉及一种显示基板、显示装置及显示基板的制备方法。
背景技术
有源矩阵有机发光二极管(简称AMOLED)由于具有自发光、高对比度、广视角、高色域、响应速度快、低功耗等优点，而广泛应用于具有高分辨率彩色屏幕的终端显示产品。但是，一些AMOLED显示模组存在四周发红和色偏的问题，影响显示效果。
发明内容
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本公开实施例提供一种显示基板，包括依次叠设于基底上的驱动电路层、发光结构层和封装结构层；所述驱动电路层包括像素驱动电路，所述发光结构层包括与所述像素驱动电路连接的发光元件，所述发光元件包括沿远离所述基底的方向依次叠设的阳极、有机功能层和阴极；所述封装结构层包括沿远离所述基底的方向依次叠设的第一无机结构层、有机层和第二无机结构层；所述第一无机结构层的折射率在沿远离所述基底的方向逐渐减小，或者，所述第一无机结构层的折射率在沿远离所述基底的方向先逐渐增大后逐渐减小；所述第一无机结构层的折射率变化范围为1.51至1.74，所述第二无机结构层的折射率大于1.74；所述第一无机结构层的厚度为0.99μm至1.21μm。
本公开实施例还提供一种显示装置，包括所述的显示基板。
本公开实施例还提供一种显示基板的制备方法，包括：
在基底上形成驱动电路层，所述驱动电路层包括像素驱动电路；
在所述驱动电路层的背离所述基底一侧形成发光结构层；其中，所述发光结构层包括与所述像素驱动电路连接的发光元件，所述发光元件包括沿远 离所述基底的方向依次叠设的阳极、有机功能层和阴极；
在所述发光结构层的背离所述基底一侧形成封装结构层；其中，所述封装结构层包括沿远离所述基底的方向依次叠设的第一无机结构层、有机层和第二无机结构层；所述第一无机结构层的折射率在沿远离所述基底的方向逐渐减小，或者，所述第一无机结构层的折射率在沿远离所述基底的方向先逐渐增大后逐渐减小；所述第一无机结构层的折射率变化范围为1.51至1.74，所述第二无机结构层的折射率大于1.74；所述第一无机结构层的厚度为0.99μm至1.21μm。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图说明
附图用来提供对本公开技术方案的进一步理解，并且构成说明书的一部分，与本公开的实施例一起用于解释本公开的技术方案，并不构成对本公开技术方案的限制。附图中部件的形状和大小不反映真实比例，目的只是示意说明本公开内容。
图1为一些示例性实施例的显示基板的膜层结构示意图；
图2为在一些示例性实施例中图1的显示基板的剖面结构示意图；
图3为一些技术中不同厚度的第一无机层对不同波长光的透过率的变化曲线图；
图4a为一些技术的显示基板中红光和绿光通过封装结构层的光路示意图；
图4b为一些示例性实施例的显示基板中红光和绿光通过封装结构层的光路示意图；
图5a为五种不同厚度的覆盖层对红光的亮度随视角变化的衰减变化图；
图5b为覆盖层厚度为
Figure PCTCN2021122157-appb-000001
时对红光、绿光和蓝光的亮度随视角变化的衰减变化图；
图5c为覆盖层厚度为
Figure PCTCN2021122157-appb-000002
时对红光、绿光和蓝光的亮度随视角变化的 衰减变化图；
图6为覆盖层为五种不同厚度的情况下JNCD随视角变化的变化曲线图；
图7为一些示例性实施例的显示基板的平面结构示意图。
具体实施方式
本领域的普通技术人员应当理解，可以对本公开实施例的技术方案进行修改或者等同替换，而不脱离本公开实施例技术方案的精神和范围，均应涵盖在本公开的权利要求范围当中。
本公开实施例提供一种显示基板，在一些示例性实施例中，如图1和图2所示，图1为一些示例性实施例的显示基板的膜层结构示意图，图2为在一些示例性实施例中图1的显示基板的剖面结构示意图，所述显示基板包括依次叠设于基底101上的驱动电路层102、发光结构层103和封装结构层104；所述驱动电路层102包括像素驱动电路，所述发光结构层103包括与所述像素驱动电路连接的发光元件310，所述发光元件310包括沿远离所述基底101的方向依次叠设的阳极301、有机功能层和阴极309；所述封装结构层104包括沿远离所述基底101的方向依次叠设的第一无机结构层401、有机层403和第二无机结构层402；所述第一无机结构层401的折射率在沿远离所述基底101的方向逐渐减小，或者，所述第一无机结构层401的折射率在沿远离所述基底101的方向先逐渐增大后逐渐减小；所述第一无机结构层401的折射率变化范围为1.51至1.74，所述第二无机结构层402的折射率大于1.74；所述第一无机结构层401的厚度为0.99μm至1.21μm。
本公开实施例的显示基板，将第一无机结构层401的折射率设置为沿远离所述基底101的方向逐渐减小，或者在沿远离所述基底101的方向先逐渐增大后逐渐减小，并将第一无机结构层401的折射率变化范围设置为1.51至1.74，第二无机结构层402的折射率设置为大于1.74，这样，一方面有利于提高显示基板的出光效率及正视角亮度，另一方面，通过将第一无机结构层401的厚度设置为0.99μm至1.21μm，有利于将显示基板的绿色子像素射出的绿光的出射方向向正视方向偏移，改善正视角度下显示基板四周发红的现象，提高显示效果。
在一些示例性实施例中，如图2所示，所述第一无机结构层401包括沿远离所述基底101的方向依次叠设的第一子无机层4011和第二子无机层4012，所述第一子无机层4011的折射率可以为1.68至1.74，所述第二子无机层4012的折射率可以为1.57至1.68。示例性地，所述第一无机结构层401的材料可以为氮氧化硅，可以通过调节形成第一子无机层4011和第二子无机层4012的氮氧化硅中氮与氧的比例来调节第一子无机层4011和第二子无机层4012的折射率。
在一些示例性实施例中，如图2所示，所述第一无机结构层401的材料可以为氮氧化硅；所述第一子无机层4011的厚度可以为0.8μm至1.15μm，所述第二子无机层4012的厚度可以为0.06μm至0.19μm。本实施例的一个示例中，所述第一子无机层4011的厚度为1μm，所述第二子无机层4012的厚度为0.1μm。如此，可以提高绿光的透过率，改善正视角度下显示基板四周发红的现象，提高显示效果。
一些技术中，显示基板的封装结构层包括沿远离基底的方向依次叠设的第一无机层、有机层和第二无机层，其中，第一无机层的厚度大约为1μm
Figure PCTCN2021122157-appb-000003
显示模组的中间经过伽马(Gamma)校正成白色后，存在正视角度下四周偏红现象。经本公开的发明人研究发现，封装结构层的第一无机层相当于一个小微腔，对光存在反射、折射和吸收，1μm厚度的第一无机层对绿光的透过率为92％，对红光的透过率为95％，因此，为了改善正视角度下显示模组四周偏红现象，考虑增加第一无机层对绿光的透过率。通过验证不同厚度的第一无机层对不同波长光的透过率影响发现，第一无机层对不同波长光的透过率随波长的增大呈周期性变化，不同厚度的第一无机层对不同波长光的透过率的周期性变化不同，如图3所示，图3为一些技术中不同厚度
Figure PCTCN2021122157-appb-000004
的第一无机层对不同波长光的透过率的变化曲线图，图3中横坐标代表波长，单位是纳米(nm)，纵坐标代表光透过率。根据图3的验证结果，考虑将第一无机层的厚度增加0.1μm，使第一无机层的厚度为1.1μm，使绿光的透过率增加到95％，红光的透过率仍为95％，以改善正视角度下显示基板四周发红的现象。考虑到工艺误差，决定将第一无机层的厚度设计为0.99μm至1.21μm，即本公开实施例中第一无机结构 层401的厚度设置为0.99μm至1.21μm。此外，本公开的发明人还发现，在显示模组的四周边缘位置，红光和绿光在依次经过封装结构层的第一无机层401’、有机层403’和第二无机层402’射出后，红光的出射方向与绿光的出射方向均偏离正视方向，如图4a所示，图4a为一些技术的显示基板中红光和绿光通过封装结构层的光路示意图。为了改善正视角度下显示模组四周偏红现象，因此考虑调节第一无机层401’的折射率来使绿光的出射方向向正视方向偏移，增大显示模组四周边缘位置绿光出射的占比。综合考虑上述第一无机层401’的厚度和折射率两个因素的影响后，本公开实施例中，将封装结构层104的第一无机结构层401的厚度设置为0.99μm至1.21μm，并将第一无机结构层401的折射率设置为沿远离所述基底101的方向逐渐减小，或者在沿远离所述基底101的方向先逐渐增大后逐渐减小，并将第一无机结构层401的折射率变化范围设置为1.51至1.74，由此可以增加绿光透过封装结构层104的透过率，并可以使绿光的出射方向向正视方向偏移(如图4b所示，图4b为一些示例性实施例的显示基板中红光和绿光通过封装结构层的光路示意图)，增大显示模组四周边缘位置绿光出射的占比，从而可以改善正视角度下显示模组四周偏红现象，提高显示效果。
在一些示例性实施例中，所述第一无机结构层401还可以包括设置在所述第一子无机层4011的朝向所述基底101一侧的第三子无机层，所述第三子无机层的折射率可以为1.51至1.72。这样，本实施例的第一无机结构层401的折射率在沿远离所述基底101的方向先增大后减小，有利于提高显示基板的出光效率及正视角亮度。本公开实施例对第一无机结构层401的膜层数量可以不做限制，在其他实施方式中，第一无机结构层401的膜层数量可以为三个以上，第一无机结构层401内单个膜层的厚度可以为0.05μm。
在一些示例性实施例中，如图2所示，所述第二无机结构层402的折射率可以为1.74至1.88。示例性地，所述第二无机结构层402的折射率可以为1.82至1.84，比如为1.83；或者，所述第二无机结构层402的折射率在沿远离所述基底101的方向可以逐渐增大。
在一些示例性实施例中，如图2所示，所述第二无机结构层402的材料可以为氮化硅，所述第二无机结构层402的厚度可以为0.55μm至0.85μm。
在一些示例性实施例中，如图2所示，所述有机层403的厚度可以为7.2μm至12.5μm。有机层403可以采用喷墨打印工艺制备，喷墨打印过程中可以通过调节形成有机层403的材料的流平速度，提高喷墨打印质量，减少混色等颜色类不良发生率。所述有机层403的折射率可以为1.1至1.3。
在一些示例性实施例中，如图1和图2所示，所述显示基板还可以包括设于所述阴极309的背离所述基底101的表面上的覆盖层(CPL)105，所述覆盖层105的厚度可以为
Figure PCTCN2021122157-appb-000005
至
Figure PCTCN2021122157-appb-000006
示例性地，所述覆盖层105的厚度可以为
Figure PCTCN2021122157-appb-000007
至
Figure PCTCN2021122157-appb-000008
比如
Figure PCTCN2021122157-appb-000009
所述封装结构层104设置在所述覆盖层105的背离所述基底101一侧。本实施例中覆盖层105的厚度设置为
Figure PCTCN2021122157-appb-000010
至
Figure PCTCN2021122157-appb-000011
这样，可以改善显示基板的色偏现象。所述覆盖层105可以采用无机或有机材料制成，所述覆盖层105的折射率可以为1.1至1.2。
为改善正视角度下显示基板四周发红的现象，封装结构层104设置为可以将绿光的出射方向向正视方向偏移，这样，在偏离正视方向的视角下，绿光的亮度将会减小，可能会造成显示基板在偏离正视方向的视角下画面偏红的现象。本公开的发明人验证了不同厚度的覆盖层105对不同颜色光的亮度随视角变化的衰减情况并发现，不同厚度的覆盖层105对红光的亮度随视角变化的衰减快慢不同，同一厚度的覆盖层105对不同颜色光的亮度随视角变化的衰减快慢不同。如图5a、图5b和图5c所示，图5a为五种不同厚度的覆盖层105对红光的亮度随视角变化的衰减变化图，图5b为覆盖层105厚度为
Figure PCTCN2021122157-appb-000012
时对红光、绿光和蓝光的亮度随视角变化的衰减变化图，图5c为覆盖层105厚度为
Figure PCTCN2021122157-appb-000013
时对红光、绿光和蓝光的亮度随视角变化的衰减变化图。如图5a所示，验证了覆盖层105厚度分别为
Figure PCTCN2021122157-appb-000014
Figure PCTCN2021122157-appb-000015
时对红光的亮度随视角变化的衰减情况，可以看出不同厚度的覆盖层105对红光的亮度随视角变化的衰减快慢不同，覆盖层105厚度越厚，红光的亮度衰减越快；如图5b所示，覆盖层105厚度为
Figure PCTCN2021122157-appb-000016
时，红光的亮度衰减最慢，绿光次之，蓝光亮度衰减最快，在偏离正视方向的视角下显示基板的画面偏粉色；如图5c所示，覆盖层105厚度为
Figure PCTCN2021122157-appb-000017
时，绿光亮度衰减最慢，红光和蓝光亮度衰减比绿光亮度衰减稍快，在偏离正视方向的视角下显示基板的画面偏青色。此外，本公开的发明人验证了覆盖层105厚度不同时 色彩偏移值(JNCD)随视角变化的变化情况，如图6所示，图6为覆盖层105为五种不同厚度的情况下JNCD随视角变化的变化曲线图，横坐标为视角的度数，纵坐标为JNCD值，可以看出，覆盖层105厚度为
Figure PCTCN2021122157-appb-000018
时，JNCD值随视角变化呈现不均匀增大及跳动的现象；覆盖层105厚度为
Figure PCTCN2021122157-appb-000019
时，JNCD值随视角增大呈逐渐增大趋势，其中，覆盖层105厚度为
Figure PCTCN2021122157-appb-000020
时JNCD值随视角增大变化最为缓慢均匀。综合上述验证结果，本实施例中，将覆盖层105的厚度设置为
Figure PCTCN2021122157-appb-000021
至
Figure PCTCN2021122157-appb-000022
可以改善显示基板的色偏现象，提高显示效果。
在一些示例性实施例中，如图1和图2所示，所述显示基板还可以包括设于所述覆盖层105的背离所述基底101的表面上的保护层106，所述封装结构层104设于所述保护层106的背离所述基底101的表面上；所述保护层106的材料可以为LiF，所述保护层106的厚度可以为
Figure PCTCN2021122157-appb-000023
至
Figure PCTCN2021122157-appb-000024
示例性地，所述保护层106的厚度可以为
Figure PCTCN2021122157-appb-000025
至
Figure PCTCN2021122157-appb-000026
比如
Figure PCTCN2021122157-appb-000027
所述保护层106可以起到保护覆盖层105的作用，并可以起到吸水作用。所述保护层106的折射率可以为1.1至1.3。
在一些示例性实施例中，如图7所示，图7为一些示例性实施例的显示基板的平面结构示意图，所述显示基板包括显示区域100和位于所述显示区域100外围的非显示区域，所述第一无机结构层401、所述有机层403和所述第二无机结构层402的周向边缘均位于所述非显示区域。所述第二无机结构层402在所述基底101上的正投影包含所述第一无机结构层401在所述基底101上的正投影，所述第一无机结构层401在所述基底101上的正投影包含所述有机层403在所述基底101上的正投影。这样，封装结构层104可以更有效地防止外界水氧侵入显示基板内部，保护发光元件。
本实施例的一个示例中，如图7所示，所述非显示区域可以包括隔离坝201，所述隔离坝201设置在所述有机层403的远离所述显示区域100的一侧，所述第一无机结构层401和所述第二无机结构层402的周向边缘设置在所述隔离坝201的远离所述显示区域100的一侧。所述隔离坝201可以设置为一个或多个，图7的示例中设置了两个隔离坝201。所述有机层403可以采用喷墨打印工艺形成，在形成有机层403过程中所述隔离坝201可以阻挡形成 所述有机层403的油墨溢流。一些实施方式中，所述隔离坝可以形成在低电压电源线(VSS)上。
本实施例的一个示例中，如图7所示，所述非显示区域可以包括栅极驱动电路(GOA)，所述有机层403在所述基底上的正投影包含所述栅极驱动电路在所述基底上的正投影。
在一些示例性实施例中，如图2所示，所述显示基板包括显示区域，所述显示区域包括红色子像素R、绿色子像素G和蓝色子像素B，每个子像素包括一个发光元件310，所述发光元件310可以为有机电致发光二极管(即OLED器件)；所述红色子像素R的OLED器件中位于阳极301和阴极309之间的所有膜层的总厚度可以为
Figure PCTCN2021122157-appb-000028
至
Figure PCTCN2021122157-appb-000029
所述绿色子像素G的OLED器件中位于阳极301和阴极309之间的所有膜层的总厚度可以为
Figure PCTCN2021122157-appb-000030
至
Figure PCTCN2021122157-appb-000031
所述蓝色子像素B的OLED器件中位于阳极301和阴极309之间的所有膜层的总厚度可以为
Figure PCTCN2021122157-appb-000032
至
Figure PCTCN2021122157-appb-000033
本实施例中，红色子像素、绿色子像素和蓝色子像素的OLED器件中位于阳极301和阴极309之间的所有膜层的总厚度设置成上述厚度，这样，在OLED器件的阳极301和阴极309之间形成光学微腔结构时，可以利用微腔效应对OLED器件的发光层的发光光谱进行窄化，并可以加强目标波长的光的发光强度，有利于提高OLED器件的发光颜色纯度和强度。
在一些示例性实施例中，如图2所示，图2示意了三个子像素，分别为红色子像素R、绿色子像素G和蓝色子像素B。以红色子像素R为例，所述发光元件(示例性地为OLED器件)310包括沿远离所述基底101的方向依次叠设的阳极301、发光层3051和阴极309，所述有机功能层包括发光层3051。所述阳极301和所述发光层3051之间还可以设置有以下任一个或多个膜层：空穴注入层302、空穴传输层303、电子阻挡层3041；所述发光层3051和所述阴极309之间还可以设置有以下任一个或多个膜层：空穴阻挡层306、电子传输层307、电子注入层308；所述显示区域内以下任意一个膜层可以连接为一体结构且覆盖所述显示区域：空穴注入层302、空穴传输层303、空穴阻挡层306、电子传输层307、电子注入层308和阴极309。即，所述显示区域内所有子像素的空穴注入层302可以连接为一体结构且覆盖所述显示区域， 空穴注入层302可以称为共通层，同样地，空穴传输层303、空穴阻挡层306、电子传输层307、电子注入层308和阴极309可以均为共通层。发光元件310中位于阳极301和阴极309之间的所有膜层可称为有机功能层。
本实施例的一个示例中，如图2所示，所述显示区域内每个子像素的发光元件(示例性地为OLED器件)310均包括沿远离所述基底101的方向依次叠设的阳极301、空穴注入层302、空穴传输层303、电子阻挡层(图2的示例中红色子像素R的电子阻挡层为3041、绿色子像素G的电子阻挡层为3042、蓝色子像素B的电子阻挡层为3043)、发光层(图2的示例中红色子像素R的发光层为3051、绿色子像素G的发光层为3052、蓝色子像素B的发光层为3053)、空穴阻挡层306、电子传输层307、电子注入层308和阴极309。所述显示区域内每个子像素的OLED器件的发光层和电子阻挡层可以为所在子像素独有，可以不与其他子像素共用。不同颜色的子像素的发光层和电子阻挡层可以不同。在一些实施方式中，可以通过调节每种颜色子像素的OLED器件的独有膜层(比如发光层和电子阻挡层)的厚度，来调节OLED器件中位于阳极301和阴极309之间的所有膜层的总厚度(微腔长度)，以满足微腔干涉条件。
示例性地，所述空穴注入层302的厚度可以为
Figure PCTCN2021122157-appb-000034
至
Figure PCTCN2021122157-appb-000035
所述空穴注入层302的材料可以采用p型掺杂的空穴传输材料，掺杂比例可以为1％。比如，MoO 3(三氧化钼)掺杂在TAPC(4,4'-环己基二[N,N-二(4-甲基苯基)苯胺])里形成的材料，即TAPC:MoO 3。空穴注入层302的作用是降低空穴注入势垒，提高空穴注入效率。
示例性地，所述空穴传输层303的厚度可以为
Figure PCTCN2021122157-appb-000036
至
Figure PCTCN2021122157-appb-000037
所述空穴传输层303的材料和所述电子阻挡层的材料可以均包括含有苯胺、芳胺、咔唑、芴或螺芴等基团的空穴传输材料，例如：4,4’-双[N-(1-萘基)-N-苯基氨基]联苯(NPB)、N,N’-双(3-甲基苯基)-N,N’-二苯基-[1,1’-联苯]-4,4’-二胺(TPD)、4-苯基-4’-(9-苯基芴-9-基)三苯基胺(BAFLP)、4,4’-双[N-(9,9-二甲基芴-2-基)-N-苯基氨基]联苯(DFLDPBi)、4,4’-二(9-咔唑基)联苯(CBP)、9-苯基-3-[4-(10-苯基-9-蒽基)苯基]-9H-咔唑(PCzPA)等。空穴传输层303的作用是提高空穴传输速率，还可以降低空穴注入势垒，提高空穴注入效率。
示例性地，所述空穴阻挡层306的厚度可以为
Figure PCTCN2021122157-appb-000038
至
Figure PCTCN2021122157-appb-000039
所述空穴阻挡层306的材料可以包括含有三嗪、亚嗪、咔唑或腈基等基团的电子传输材料，比如，BAlq(双(2-甲基-8-喹啉基)-4-(苯基苯酚)铝)。空穴阻挡层306可以阻挡发光层中的空穴、激子向阴极309所在侧迁移，提高发光效率。
示例性地，所述电子传输层307的厚度可以为
Figure PCTCN2021122157-appb-000040
至
Figure PCTCN2021122157-appb-000041
电子传输层307可以是电子传输材料和8-羟基喹啉锂(Liq)的混合膜，电子传输材料可以为含氮杂环类化合物，如Bphen(,7-二苯基-1,10-菲罗啉)、TPBi(1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯)等。电子传输层307可以提高电子传输速率。
示例性地，所述电子注入层308的厚度可以为
Figure PCTCN2021122157-appb-000042
至
Figure PCTCN2021122157-appb-000043
电子注入层308的材料可以采用氟化锂(LiF)、镱(Yb)、镁(Mg)或钙(Ca)等材料。电子注入层308可以降低电子注入势垒，提高电子注入效率。
示例性地，所述红色子像素的OLED器件中的发光层3051的厚度为d1，所述绿色子像素的OLED器件中的发光层3052的厚度为d2，所述蓝色子像素的OLED器件中的发光层3053的厚度为d3，其中，d1>d2>d3。示例性地，
Figure PCTCN2021122157-appb-000044
一些实施方式中，每种子像素的OLED器件中的发光层的材料可以均包括主体材料和掺杂材料。
示例性地，所述红色子像素的OLED器件中的电子阻挡层3041的厚度为D1，所述绿色子像素的OLED器件中的电子阻挡层3042的厚度为D2，所述蓝色子像素的OLED器件中的电子阻挡层3043的厚度为D3，其中，D1>D2>D3。示例性地，
Figure PCTCN2021122157-appb-000045
示例性地，所述OLED器件的阳极301可以采用具有高功函数的材料。对于顶发射型OLED，阳极301可以采用高反射率的金属层和透明氧化物层的复合膜层结构，如Ag/ITO(银/氧化铟锡)、Ag/IZO(银/氧化铟锌)或者ITO/Ag/ITO等。本示例中，阳极301采用ITO/Ag/ITO，其中，三个膜层的厚度可以依次为
Figure PCTCN2021122157-appb-000046
示例性地，所述OLED器件的阴极309材料可以采用镁(Mg)、银(Ag)或铝(Al)，或者合金材料，如Mg:Ag的合金。本示例中，阴极309材料采 用Mg:Ag的合金，Mg与Ag的比例为9:1，阴极309的厚度可以为
Figure PCTCN2021122157-appb-000047
至
Figure PCTCN2021122157-appb-000048
所述阴极309可以通过蒸镀工艺形成。
本实施例中，显示基板的部分膜层参数可以如表1所示。
表1
Figure PCTCN2021122157-appb-000049
本实施例的另一个示例中，所述阳极301采用ITO/Ag/ITO，其中，三个膜层的厚度可以依次为
Figure PCTCN2021122157-appb-000050
所述空穴传输层303的厚度可以为
Figure PCTCN2021122157-appb-000051
Figure PCTCN2021122157-appb-000052
其余膜层厚度可以与前文实施例相同。本实施例中，显示基板的部分膜层参数可以如表2所示。
表2
Figure PCTCN2021122157-appb-000053
表1和表2两个实施例的显示基板，改善了一些技术的显示基板在正视条件下四周发红的现象，以及色偏的现象，并且没有产生混色、暗线、亮线、暗点、亮点等不良。
在一些示例性实施例中，所述基底101可以是柔性基底，或者可以是刚性基底。柔性基底可以包括叠设的第一柔性材料层、第一无机材料层、粘结层、第二柔性材料层和第二无机材料层，第一柔性材料层和第二柔性材料层的材料可以采用聚酰亚胺(PI)、聚对苯二甲酸乙二酯(PET)或经表面处理的聚合物软膜等材料，第一无机材料层和第二无机材料层的材料可以采用氮化硅(SiNx)或氧化硅(SiOx)等，用于提高基底的抗水氧能力，粘结层的材料可以采用非晶硅(a-si)。
在一些示例性实施方式中，如图2所示，所述驱动电路层102可以包括构成像素驱动电路的多个晶体管和存储电容，图2中以每个像素驱动电路包括一个驱动晶体管210和一个存储电容211为例进行示意。在一些实施方式 中，所述驱动电路层102可以包括：设置在基底101上的第一绝缘层；设置在第一绝缘层上的有源层；覆盖有源层的第二绝缘层；设置在第二绝缘层上的栅电极和第一电容电极；覆盖栅电极和第一电容电极的第三绝缘层；设置在第三绝缘层上的第二电容电极；覆盖第二电容电极的第四绝缘层，第二绝缘层、第三绝缘层和第四绝缘层上开设有过孔，过孔暴露出有源层；设置在第四绝缘层上的源电极和漏电极，源电极和漏电极分别通过相应的过孔与有源层连接；覆盖前述结构的平坦层，平坦层上开设有过孔，过孔暴露出漏电极。有源层、栅电极、源电极和漏电极组成驱动晶体管210，第一电容电极和第二电容电极组成存储电容211。
在一些示例性实施方式中，如图2所示，发光结构层103可以包括阳极301、像素定义层510、阴极309，以及位于阳极301和阴极309之间的有机功能层，有机功能层至少包括发光层(图2的示例中红色子像素的发光层为3051、绿色子像素的发光层为3052、蓝色子像素的发光层为3053)，有机功能层还可以包括所述空穴注入层302、空穴传输层303、电子阻挡层(图2的示例中红色子像素的电子阻挡层为3041、绿色子像素的电子阻挡层为3042、蓝色子像素的电子阻挡层为3043)、空穴阻挡层306、电子传输层307和电子注入层308。阳极301设置在驱动电路层102的平坦层上，通过平坦层上开设的过孔与驱动晶体管210的漏电极连接。像素定义层510设置在阳极301的背离基底101的一侧，像素定义层510设有像素开口，像素定义层510将阳极301表面的靠近周向边缘的部分覆盖，像素开口将阳极301表面的其余部分暴露出，阳极301表面被像素开口暴露出的部分依次叠设有机功能层的多个膜层及阴极309。每个子像素的阳极301、有机功能层和阴极303形成OLED器件，配置为在相应的像素驱动电路的驱动下出射相应颜色的光线。发光结构层103还可以包括其它膜层，比如设置在像素定义层510上的隔垫柱等。
下面结合图2说明一些示例性实施例的显示基板的制备方法，在一些示例性实施方式中，显示基板的制备过程可以包括如下操作：
1)在基底101上形成驱动电路层102，所述驱动电路层102包括像素驱动电路。示例性地，如图2所示，驱动电路层102的制备过程可以包括：
在基底101上依次沉积第一绝缘薄膜和有源层薄膜，通过构图工艺对有源层薄膜进行构图，形成覆盖基底101的第一绝缘层，以及设置在第一绝缘层上的有源层图案，有源层图案至少包括每个子像素的有源层。
随后，依次沉积第二绝缘薄膜和第一金属薄膜，通过构图工艺对第一金属薄膜进行构图，形成覆盖有源层图案的第二绝缘层，以及设置在第二绝缘层上的第一栅金属层图案，第一栅金属层图案至少包括每个子像素的栅电极和第一电容电极。
随后，依次沉积第三绝缘薄膜和第二金属薄膜，通过构图工艺对第二金属薄膜进行构图，形成覆盖第一栅金属层的第三绝缘层，以及设置在第三绝缘层上的第二栅金属层图案，第二栅金属层图案至少包括每个子像素的第二电容电极，第二电容电极的位置与第一电容电极的位置相对应。第一电容电极和第二电容电极组成存储电容211。
随后，沉积第四绝缘薄膜，通过构图工艺对第四绝缘薄膜进行构图，形成覆盖第二栅金属层的第四绝缘层图案，每个子像素的第四绝缘层上开设有至少两个过孔，两个过孔内的第四绝缘层、第三绝缘层和第二绝缘层被刻蚀掉，暴露出每个子像素的有源层的表面。
随后，沉积第三金属薄膜，通过构图工艺对第三金属薄膜进行构图，在第四绝缘层上形成源漏金属层图案，源漏金属层至少包括每个子像素的源电极和漏电极，源电极和漏电极分别通过穿过第四绝缘层、第三绝缘层和第二绝缘层的两个过孔与有源层连接。
随后，在形成前述图案的基底101上涂覆有机材料的平坦薄膜，通过掩膜、曝光、显影等工序，在每个子像素的平坦薄膜上形成过孔，该过孔内的平坦薄膜被显影掉，暴露出漏电极的表面，从而形成覆盖基底101的平坦层(PLN)。
至此，在基底101上制备完成驱动电路层102，如图2所示。驱动电路层102中，有源层、栅电极、源电极和漏电极组成像素驱动电路的驱动晶体管210，第一电容电极和第二电容电极组成像素驱动电路的存储电容211。像素驱动电路对每个子像素的OLED器件的驱动可以采用有源矩阵驱动方式。
本示例中，第一绝缘层、第二绝缘层、第三绝缘层和第四绝缘层可以采用硅氧化物(SiOx)、硅氮化物(SiNx)和氮氧化硅(SiON)中的任意一种或多种，可以是单层、多层或复合层。第一绝缘层可称为缓冲(Buffer)层，用于提高基底101的抗水氧能力，第二绝缘层和第三绝缘层可称为栅绝缘(GI)层，第四绝缘层可称为层间绝缘(ILD)层。第一金属薄膜、第二金属薄膜和第三金属薄膜可以采用金属材料，如银(Ag)、铜(Cu)、铝(Al)、钛(Ti)和钼(Mo)中的任意一种或多种，或上述金属的合金材料，如铝钕合金(AlNd)或钼铌合金(MoNb)，可以是单层结构或者多层复合结构，如Ti/Al/Ti等。有源层薄膜可以采用非晶态氧化铟镓锌材料(a-IGZO)、氮氧化锌(ZnON)、氧化铟锌锡(IZTO)、非晶硅(a-Si)、多晶硅(p-Si)、六噻吩、聚噻吩等材料。
2)在所述驱动电路层102的远离所述基底101一侧形成阳极层，所述阳极层包括多个所述阳极301。示例性地，在形成前述图案的基底101上沉积阳极薄膜，通过构图工艺对阳极薄膜进行构图，形成包括多个阳极301的阳极层，阳极301形成在驱动电路层102的平坦层上，并通过平坦层上的过孔与驱动晶体管210的漏电极连接。
3)形成像素定义层510。在形成前述图案的基底101上涂覆像素定义薄膜，通过掩膜、曝光、显影等工序，形成具有像素开口的像素定义层510，其中，像素开口内的像素定义薄膜被显影掉，暴露出相应的阳极301表面，像素定义层510将阳极301表面的靠近周向边缘的部分覆盖。像素定义层510的材料可以采用聚酰亚胺、亚克力或聚对苯二甲酸乙二醇酯等。随后，可以在像素定义层510上形成隔垫柱(PS)。
4)在所述阳极301的背离所述基底101的表面形成有机功能层和阴极309。在所述阳极301的背离所述基底101的表面依次形成空穴注入层302、空穴传输层303、电子阻挡层(包括红色子像素的电子阻挡层为3041、绿色子像素的电子阻挡层为3042、蓝色子像素的电子阻挡层为3043)、发光层(包括红色子像素的发光层为3051、绿色子像素的发光层为3052、蓝色子像素的发光层为3053)、空穴阻挡层306、电子传输层307、电子注入层308和阴极309。其中，本步骤的所有膜层可以均采用蒸镀工艺形成。至此，完成发 光结构层103的制备。
5)在发光结构层103的背离所述基底101的表面依次形成覆盖层105和保护层106。
6)在保护层106的背离所述基底101的表面形成封装结构层104。示例性地，在保护层106的背离所述基底101的表面依次形成第一无机结构层401的第一子无机层4011和第二子无机层4012、有机层403和第二无机结构层402。其中，第一无机结构层401和第二无机结构层402可以均采用化学气相沉积法形成，有机层403可以采用喷墨打印工艺形成。封装结构层104可有效防止水氧侵入发光结构层103内，保护发光元件310。
基于上文内容，本公开实施例还提供一种显示基板的制备方法，包括：
在基底上形成驱动电路层，所述驱动电路层包括像素驱动电路；
在所述驱动电路层的背离所述基底一侧形成发光结构层；其中，所述发光结构层包括与所述像素驱动电路连接的发光元件，所述发光元件包括沿远离所述基底的方向依次叠设的阳极、有机功能层和阴极；
在所述发光结构层的背离所述基底一侧形成封装结构层；其中，所述封装结构层包括沿远离所述基底的方向依次叠设的第一无机结构层、有机层和第二无机结构层；所述第一无机结构层的折射率在沿远离所述基底的方向逐渐减小，或者，所述第一无机结构层的折射率在沿远离所述基底的方向先逐渐增大后逐渐减小；所述第一无机结构层的折射率变化范围为1.51至1.74，所述第二无机结构层的折射率大于1.74；所述第一无机结构层的厚度为0.99μm至1.21μm。
本公开实施例还提供一种显示装置，包括前文任一实施例所述的显示基板。显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
在附图中，有时为了明确起见，夸大表示了构成要素的大小、层的厚度或区域。因此，本公开的实施方式并不一定限定于该尺寸，附图中每个部件的形状和大小不反映真实比例。此外，附图示意性地示出了一些例子，本公开的实施方式不局限于附图所示的形状或数值。
在本文描述中，“平行”是指两条直线形成的角度为-10°以上且10°以下的状态，因此，包括该角度为-5°以上且5°以下的状态。另外，“垂直”是指两条直线形成的角度为80°以上且100°以下的状态，因此，包括85°以上且95°以下的角度的状态。
在本文描述中，术语“上”、“下”、“左”、“右”、“顶”、“内”、“外”、“轴向”、“四角”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开实施例的简化描述，而不是指示或暗示所指的结构具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。
在本文描述中，除非另有明确的规定和限定，术语“连接”、“固定连接”、“安装”、“装配”应做广义理解，例如，可以是固定连接，或是可拆卸连接，或一体地连接；术语“安装”、“连接”、“固定连接”可以是直接相连，或通过中间媒介间接相连，或是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据情况理解上述术语在本公开实施例中的含义。

Claims (20)

  1. 一种显示基板，包括依次叠设于基底上的驱动电路层、发光结构层和封装结构层；所述驱动电路层包括像素驱动电路，所述发光结构层包括与所述像素驱动电路连接的发光元件，所述发光元件包括沿远离所述基底的方向依次叠设的阳极、有机功能层和阴极；
    所述封装结构层包括沿远离所述基底的方向依次叠设的第一无机结构层、有机层和第二无机结构层；所述第一无机结构层的折射率在沿远离所述基底的方向逐渐减小，或者，所述第一无机结构层的折射率在沿远离所述基底的方向先逐渐增大后逐渐减小；所述第一无机结构层的折射率变化范围为1.51至1.74，所述第二无机结构层的折射率大于1.74；所述第一无机结构层的厚度为0.99μm至1.21μm。
  2. 如权利要求1所述的显示基板，其中：所述第一无机结构层包括沿远离所述基底的方向依次叠设的第一子无机层和第二子无机层，所述第一子无机层的折射率为1.68至1.74，所述第二子无机层的折射率为1.57至1.68。
  3. 如权利要求2所述的显示基板，其中：所述第一无机结构层的材料为氮氧化硅；所述第一子无机层的厚度为0.8μm至1.15μm，所述第二子无机层的厚度为0.06μm至0.19μm。
  4. 如权利要求2所述的显示基板，其中：所述第一无机结构层还包括设置在所述第一子无机层的朝向所述基底一侧的第三子无机层，所述第三子无机层的折射率为1.51至1.72。
  5. 如权利要求1至4任一项所述的显示基板，其中：所述第二无机结构层的折射率为1.74至1.88。
  6. 如权利要求5所述的显示基板，其中：所述第二无机结构层的材料为氮化硅，所述第二无机结构层的厚度为0.55μm至0.85μm。
  7. 如权利要求5所述的显示基板，其中：所述第二无机结构层的折射率为1.82至1.84，或者，所述第二无机结构层的折射率在沿远离所述基底的方向逐渐增大。
  8. 如权利要求1至4任一项所述的显示基板，其中：所述有机层的厚度 为7.2μm至12.5μm。
  9. 如权利要求1至4任一项所述的显示基板，还包括设于所述阴极的背离所述基底的表面上的覆盖层，所述覆盖层的厚度为
    Figure PCTCN2021122157-appb-100001
    至
    Figure PCTCN2021122157-appb-100002
    所述封装结构层设置在所述覆盖层的背离所述基底一侧。
  10. 如权利要求9所述的显示基板，还包括设于所述覆盖层的背离所述基底的表面上的保护层，所述封装结构层设于所述保护层的背离所述基底的表面上；所述保护层的材料为LiF，所述保护层的厚度为
    Figure PCTCN2021122157-appb-100003
    至
    Figure PCTCN2021122157-appb-100004
  11. 如权利要求1至4任一项所述的显示基板，包括显示区域，所述显示区域包括红色子像素、绿色子像素和蓝色子像素，所述发光元件为有机电致发光二极管；
    所述红色子像素的所述发光元件中位于阳极和阴极之间的所有膜层的总厚度为
    Figure PCTCN2021122157-appb-100005
    至
    Figure PCTCN2021122157-appb-100006
    所述绿色子像素的所述发光元件中位于阳极和阴极之间的所有膜层的总厚度为
    Figure PCTCN2021122157-appb-100007
    至
    Figure PCTCN2021122157-appb-100008
    所述蓝色子像素的所述发光元件中位于阳极和阴极之间的所有膜层的总厚度为
    Figure PCTCN2021122157-appb-100009
    至
    Figure PCTCN2021122157-appb-100010
  12. 如权利要求11所述的显示基板，其中：所述有机功能层包括发光层；所述阳极和所述发光层之间还设置有以下任一个或多个膜层：空穴注入层、空穴传输层、电子阻挡层；所述发光层和所述阴极之间还设置有以下任一个或多个膜层：空穴阻挡层、电子传输层、电子注入层；
    所述显示区域内以下任意一个膜层连接为一体结构且覆盖所述显示区域：空穴注入层、空穴传输层、空穴阻挡层、电子传输层、电子注入层和阴极。
  13. 如权利要求12所述的显示基板，其中：所述红色子像素的所述发光元件中的发光层的厚度为d1，所述绿色子像素的所述发光元件中的发光层的厚度为d2，所述蓝色子像素的所述发光元件中的发光层的厚度为d3，其中，d1>d2>d3。
  14. 如权利要求12所述的显示基板，其中：所述红色子像素的所述发光元件中的电子阻挡层的厚度为D1，所述绿色子像素的所述发光元件中的电子 阻挡层的厚度为D2，所述蓝色子像素的所述发光元件中的电子阻挡层的厚度为D3，其中，D1>D2>D3。
  15. 如权利要求1所述的显示基板，包括显示区域和位于所述显示区域外围的非显示区域，所述第一无机结构层、所述有机层和所述第二无机结构层的周向边缘均位于所述非显示区域；
    所述第二无机结构层在所述基底上的正投影包含所述第一无机结构层在所述基底上的正投影，所述第一无机结构层在所述基底上的正投影包含所述有机层在所述基底上的正投影。
  16. 如权利要求15所述的显示基板，其中：所述非显示区域包括隔离坝，所述隔离坝设置在所述有机层的远离所述显示区域的一侧，所述第一无机结构层和所述第二无机结构层的周向边缘设置在所述隔离坝的远离所述显示区域的一侧。
  17. 如权利要求15所述的显示基板，其中：所述非显示区域包括栅极驱动电路，所述有机层在所述基底上的正投影包含所述栅极驱动电路在所述基底上的正投影。
  18. 一种显示装置，包括权利要求1至17任一项所述的显示基板。
  19. 一种显示基板的制备方法，包括：
    在基底上形成驱动电路层，所述驱动电路层包括像素驱动电路；
    在所述驱动电路层的背离所述基底一侧形成发光结构层；其中，所述发光结构层包括与所述像素驱动电路连接的发光元件，所述发光元件包括沿远离所述基底的方向依次叠设的阳极、有机功能层和阴极；
    在所述发光结构层的背离所述基底一侧形成封装结构层；其中，所述封装结构层包括沿远离所述基底的方向依次叠设的第一无机结构层、有机层和第二无机结构层；所述第一无机结构层的折射率在沿远离所述基底的方向逐渐减小，或者，所述第一无机结构层的折射率在沿远离所述基底的方向先逐渐增大后逐渐减小；所述第一无机结构层的折射率变化范围为1.51至1.74，所述第二无机结构层的折射率大于1.74；所述第一无机结构层的厚度为0.99μm至1.21μm。
  20. 如权利要求19所述的显示基板的制备方法，其中，所述形成封装结构层的过程中，所述第一无机结构层和所述第二无机结构层均采用化学气相沉积法形成。
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