WO2018149009A1 - Procédé de fabrication de dispositif d'affichage oled de type à émission supérieure et structure de celui-ci - Google Patents

Procédé de fabrication de dispositif d'affichage oled de type à émission supérieure et structure de celui-ci Download PDF

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Publication number
WO2018149009A1
WO2018149009A1 PCT/CN2017/076771 CN2017076771W WO2018149009A1 WO 2018149009 A1 WO2018149009 A1 WO 2018149009A1 CN 2017076771 W CN2017076771 W CN 2017076771W WO 2018149009 A1 WO2018149009 A1 WO 2018149009A1
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Prior art keywords
emission type
top emission
auxiliary electrode
light emitting
layer
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PCT/CN2017/076771
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English (en)
Chinese (zh)
Inventor
郝鹏
张育楠
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深圳市华星光电技术有限公司
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Publication of WO2018149009A1 publication Critical patent/WO2018149009A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method and a structure for fabricating a top emission type OLED display device.
  • OLED Organic Light Emitting Diode
  • OLED products are mainly used in small-sized mobile phones, tablet (Pad) screens, and larger TV (TV) screens.
  • Bottom OLEDs are limited by the aperture ratio, making it difficult to achieve high resolution. More and more practitioners are turning to the development of top-emitting OLEDs in the hope of achieving higher resolutions.
  • the cathode of the Top OLED uses a thinner transparent metal to connect to the edge circuit of the screen. Due to the need to balance the light transmittance, the thickness of the transparent cathode is thin, resulting in poor electrical conductivity.
  • the screen size is large, the center of the screen is far away from the electrode interface, and the long-distance current transmission causes the driving voltage to rise greatly, which is easy to cause a large difference in driving voltage between the edge of the screen and the OLED component at the center of the screen, that is, there is a voltage drop. (IR drop) problem, only relying on the correction of the drive circuit, it is difficult to effectively improve the IR drop, the screen will appear dark defects in the center. Therefore, it is necessary to improve the cathode of the Top OLED, improve the conductivity, and narrow the gap of the driving voltage.
  • One of the methods for improving the cathode of the Top OLED is to add an auxiliary electrode or an auxiliary wire on the transparent metal cathode of the Top OLED to increase the conductivity of the cathode layer to reduce the problem caused by the IR drop.
  • the direct fabrication of the auxiliary electrode on the transparent metal cathode is affected by a number of limitations: First, the metal material used as the transparent cathode is easily oxidized, and it is necessary to isolate the contamination of water, oxygen and other highly oxidizing substances; The organic luminescent material layer in the OLED will deteriorate at a higher temperature, which directly affects the performance of the OLED device, and its withstand process temperature generally does not exceed 80 °C.
  • the industry's focus on the solution is to add a transparent electrode similar to Indium Tin Oxide (ITO), which has a high process temperature, generally exceeding 150 ° C, which will destroy the organic light-emitting material layer in the OLED;
  • ITO Indium Tin Oxide
  • nano-silver pastes sintered at room temperature have been available, the solute of nano-silver pastes is generally water-based (for ease of evaporation), which oxidizes the transparent cathode material of the OLED.
  • An object of the present invention is to provide a method for fabricating a top emission type OLED display device, which can avoid damage to the organic light emitting material layer and the cathode by the existing auxiliary electrode process, enhance the conductivity of the cathode, and reduce the IR drop of the large size OLED display device. .
  • Another object of the present invention is to provide a top emission type OLED display device structure which has good cathode conductivity and low IR drop.
  • the present invention first provides a method for fabricating a top emission type OLED display device, comprising the following steps:
  • Step S1 providing a TFT array substrate
  • Step S2 preparing a plurality of top emission type OLEDs arranged in a matrix on the TFT array substrate;
  • Each of the top emission type OLEDs includes an anode, an organic light emitting material layer, and a transparent cathode stacked in this order from bottom to top; each of the top emission type OLEDs has a light emitting region, and a non-light emitting region other than the light emitting region;
  • Step S3 providing a package cover plate, and preparing an auxiliary electrode on a portion of the package cover corresponding to the non-light-emitting region of the top emission type OLED;
  • Step S4 coating a single layer of nano gold spheres on the auxiliary electrode
  • Step S5 the auxiliary electrode and the nano gold ball prepared on the package cover plate are oriented toward the TFT array substrate, and the package cover plate and the TFT array substrate are packaged, so that the nano gold ball conduction auxiliary electrode and the top emission type OLED are transparent. cathode.
  • the TFT array substrate includes a plurality of switching TFTs distributed in a matrix, a plurality of driving TFTs correspondingly connected to the switching TFTs, and a flat layer covering the switching TFTs and the driving TFTs; the anode of the top emission type OLED is prepared on the flat layer and Contacting the driving TFT; the step S4 applies a single-layer nano-gold ball on the auxiliary electrode corresponding to the position of the switching TFT and the driving TFT.
  • the step S2 prepares a top emission type OLED by an evaporation process or an inkjet printing process.
  • the step S2 further includes preparing a pixel defining layer between the anode and the organic light emitting material layer and between the flat layer and the organic light emitting material layer; the pixel defining layer has a via hole exposing a portion of the anode, the top emitting The area of the OLED corresponding to the via is a light-emitting area, and the other areas are non-light-emitting areas.
  • the step S3 adopts a yellow light process to prepare a metal wire, and the metal wire is used as an auxiliary electrode; Or use screen printing nano silver paste, nano silver paste as auxiliary electrode; or use inkjet printing nano silver paste, nano silver paste as auxiliary electrode.
  • the nano gold spheres include plastic microparticles, a nickel layer plated on the outer surface of the plastic microparticles, and a gold layer plated on the outer surface of the nickel layer; the step S4 uniformly mixes the nanogold spheres in a resin solvent or a package water absorbing material for coating. cloth.
  • the invention also provides a top emission type OLED display device structure, comprising:
  • each of the top emission type OLEDs includes an anode, an organic light emitting material layer, and a transparent cathode stacked in this order from bottom to top; each top emission type The OLED has a light emitting region, and a non-light emitting region other than the light emitting region;
  • An auxiliary electrode disposed on a portion of the package cover corresponding to the non-light-emitting region of the top emission type OLED;
  • the nanogold ball conducts the auxiliary electrode and the transparent cathode of the top emission type OLED.
  • the TFT array substrate includes a plurality of switching TFTs distributed in a matrix, a plurality of driving TFTs correspondingly connected to the switching TFTs, and a flat layer covering the switching TFTs and the driving TFTs; the anode of the top emission type OLED is prepared on the flat layer and Contact with the driving TFT; the nano gold ball is coated on the auxiliary electrode corresponding to the position of the switching TFT and the driving TFT.
  • the top emission type OLED display device structure further includes a pixel defining layer disposed between the anode and the organic light emitting material layer and between the flat layer and the organic light emitting material layer; the pixel defining layer has a via hole exposing a part of the anode
  • the area of the top emission type OLED corresponding to the via hole is a light emitting area, and the other areas are non-light emitting areas.
  • the auxiliary electrode is a metal wire or a nano silver paste; the nano gold ball includes plastic microparticles, a nickel layer plated on the outer surface of the plastic microparticles, and a gold layer plated on the outer surface of the nickel layer.
  • the invention also provides a method for fabricating a top emission type OLED display device, comprising the following steps:
  • Step S1 providing a TFT array substrate
  • Step S2 preparing a plurality of top emission type OLEDs arranged in a matrix on the TFT array substrate;
  • Each of the top emission type OLEDs includes an anode, an organic light emitting material layer, and a transparent cathode stacked in this order from bottom to top; each of the top emission type OLEDs has a light emitting region, and a non-light emitting region other than the light emitting region;
  • Step S3 providing a package cover plate, and preparing an auxiliary electrode on a portion of the package cover corresponding to the non-light-emitting region of the top emission type OLED;
  • Step S4 coating a single layer of nano gold spheres on the auxiliary electrode
  • Step S5 the auxiliary electrode and the nano gold ball prepared on the package cover plate are oriented toward the TFT array substrate, and the package cover plate and the TFT array substrate are packaged, so that the nano gold ball conduction auxiliary electrode and the top emission type OLED are transparent.
  • the TFT array substrate includes a plurality of switching TFTs distributed in a matrix, a plurality of driving TFTs correspondingly connected to the switching TFTs, and a flat layer covering the switching TFTs and the driving TFTs; and an anode of the top emission type OLED is prepared in a flat layer And contacting the driving TFT; the step S4 coating a single layer of nano gold balls on the auxiliary electrode corresponding to the position of the switching TFT and the driving TFT;
  • the step S2 adopts an evaporation process or an inkjet printing process to prepare a top emission type OLED.
  • the present invention provides a method for fabricating a top emission type OLED display device, wherein an auxiliary electrode is prepared on a portion of a package cover corresponding to a non-light emitting region of a top emission type OLED, and is coated on the auxiliary electrode
  • the nano gold ball after encapsulating the cover plate and the TFT array substrate, the nano gold ball conducting auxiliary electrode and the transparent cathode of the top emission type OLED can avoid damage to the organic light emitting material layer and the cathode by the auxiliary electrode process, and enhance The conductivity of the cathode reduces the IR drop of large OLED display devices.
  • the invention provides a top emission type OLED display device structure, wherein an auxiliary electrode is disposed on a package cover plate, and a single layer of nano gold balls is coated on the auxiliary electrode, and the auxiliary electrode and the top emission type OLED are guided by the nano gold ball.
  • the transparent cathode can enhance the conductivity of the cathode and reduce the IR drop of the large-sized OLED display device.
  • FIG. 1 is a flow chart showing a method of fabricating a top emission type OLED display device of the present invention
  • FIG. 2 is a schematic cross-sectional view showing the structure of a top emission type OLED display device of the present invention
  • FIG. 3 is a top plan view of a TFT array substrate in a top emission type OLED display device structure of the present invention
  • FIG. 4 is a bottom view of a package cover in a top emission type OLED display device structure of the present invention.
  • FIG. 5 is a schematic cross-sectional view showing a nano gold sphere in a structure of a top emission type OLED display device of the present invention.
  • the present invention first provides a method for fabricating a top emission type OLED display device, comprising the following steps:
  • step S1 the TFT array substrate 1 is provided.
  • the TFT array substrate 1 includes a plurality of switching TFTs T1 distributed in a matrix, a plurality of driving TFTs T2 connected to the switching TFT T1, and a cover TFT TFT T1 and a driving TFT T2.
  • Flat layer 18 the switching TFT T1 and the driving TFT T2 are both disposed on the base substrate 11; the switching TFT T1 includes a first gate 121 and a gate insulating layer disposed in this order from bottom to top. 13.
  • the driving TFT T2 includes a second gate 122 and a gate disposed in order from bottom to top.
  • the second source 163 and the second drain 164 are respectively in contact with the two sides of the second active layer 142, and the first drain 162 of the switching TFT T1 is in contact with the driving TFT T2.
  • Step S2 A plurality of top emission type OLEDs 3 distributed in a matrix form are prepared on the TFT array substrate 1.
  • each of the top emission type OLEDs 3 includes an anode 31, an organic light emitting material layer 32, and a transparent cathode 33 stacked in this order from bottom to top; each of the top emission type OLEDs 3 has a light emitting area A1 and a light emitting unit. Non-light-emitting area A2 other than area A1.
  • the step S2 prepares the top emission type OLED 3 by an evaporation process or an inkjet printing (IJP) process according to an existing top emission type OLED process.
  • IJP inkjet printing
  • the anode 31 of the top emission type OLED 3 is formed on the flat layer 18 and is in contact with the second drain 164 of the driving TFT T2.
  • the step S2 further includes preparing a pixel defining layer 2 between the anode 31 and the organic luminescent material layer 32 and between the flat layer 18 and the organic luminescent material layer 32.
  • the pixel defining layer 2 has a via hole 21 exposing a portion of the anode 31, the region of the top emission type OLED 3 corresponding to the via hole 21 being the light emitting region A1, and the other regions being the non-light emitting region A2.
  • Step S3 in conjunction with FIG. 3 and FIG. 4, a package cover 5 is provided, on which an auxiliary electrode 7 is prepared corresponding to a portion of the non-light-emitting region A2 of the top emission type OLED 3.
  • the step 3 is on the package cover 5 corresponding to the non-light-emitting area A2 of the top emission type OLED 3
  • the auxiliary electrode 7 is partially prepared, instead of directly preparing the auxiliary electrode on the transparent cathode of the top emission type OLED as in the prior art, without being limited by the process temperature, and there is no cathode or organic light emitting material layer which pollutes or destroys the top emission type OLED.
  • the process selection of the step 3 can be diversified, specifically, a yellow light process can be used to prepare a metal wire, such as a nano silver wire, and the metal wire is used as an auxiliary electrode 7; a screen printing nano silver paste can be used to nanometer Silver paste is used as the auxiliary electrode 7; inkjet printing nano silver paste can also be used, and nano silver paste is used as the auxiliary electrode 7. Regardless of the process used, damage to the organic light-emitting material layer 32 and the transparent cathode 33 can be avoided.
  • Step S4 in conjunction with FIG. 4, a single layer of nanogold balls 9 is coated on the auxiliary electrode 7.
  • the nano gold ball 9 includes plastic microparticles 91, a nickel layer 92 plated on the outer surface of the plastic microparticles 91, and a gold layer 93 plated on the outer surface of the nickel layer 92.
  • the nano gold spheres 9 are uniformly mixed in a resin solvent or a package water absorbing material for coating.
  • step S4 a single-layer nano-gold ball 9 is coated on the auxiliary electrode 7 corresponding to the position of the switching TFT T1 and the driving TFT T2.
  • the particle size of the nano gold sphere 9 should be carefully designed to ensure that the nano-gold ball 9 can realize the auxiliary electrode 7 and the top emission type OLED 3 after the package step 5 and the TFT array substrate 1 are packaged in the subsequent step S5.
  • the conduction of the transparent cathode 33 does not affect the underlying device due to too much pressure.
  • Step S5 in conjunction with FIG. 2 to FIG. 4, the auxiliary electrode 7 and the nano gold ball 9 prepared on the package cover 5 are oriented toward the TFT array substrate 1, and the package cover 5 and the TFT array substrate 1 are packaged to make nano
  • the gold ball 9 turns on the auxiliary electrode 7 and the transparent cathode 33 of the top emission type OLED 3.
  • the conduction of the auxiliary electrode 7 and the transparent cathode 33 of the top emission type OLED 3 by the nano gold ball 9 can enhance the conductivity of the transparent cathode 33, improve the conductivity of the transparent cathode 33, and reduce the IR drop of the large-sized OLED display device.
  • the present invention also provides a top emission type OLED display device structure.
  • the top emission type OLED display device structure includes:
  • the TFT array substrate 1 includes, in particular, a plurality of switching TFTs T1 distributed in a matrix, a plurality of driving TFTs T2 connected to the switching TFT T1, and a flat covering the switching TFT T1 and the driving TFT T2. Further, according to the conventional design, the switching TFT T1 and the driving TFT T2 are both disposed on the base substrate 11; the switching TFT T1 includes a first gate 121 and a gate which are sequentially disposed from bottom to top.
  • the driving TFT T2 includes a second gate sequentially disposed from bottom to top 122, the gate insulating layer 13, the second active layer 142, the etch stop layer 15, the second source 163 and the second drain 164, and the protective layer 17; wherein, the first source 161 and the first drain 162 Contacting the two sides of the first active layer 141 respectively, the second source 163 and the second drain 164 are respectively in contact with the two sides of the second active layer 142, and the switching TFT T1 The first drain 162 is in contact with the second gate 122 connected to the driving TFT T2;
  • each of the top emission type OLEDs 3 includes an anode 31, an organic light emitting material layer 32, and a transparent cathode 33 which are sequentially stacked from bottom to top.
  • Each top emission type OLED 3 has a light emitting area A1, and a non-light emitting area A2 other than the light emitting area A1;
  • a pixel defining layer 2 disposed between the anode 31 and the organic light emitting material layer 32 and between the flat layer 18 and the organic light emitting material layer 32; specifically, the pixel defining layer 2 has a via hole 21 exposing a portion of the anode 31
  • the area of the top emission type OLED 3 corresponding to the via hole 21 is the light emitting area A1, and the other area is the non-light emitting area A2;
  • the package cover 5 is a pair of the TFT array substrate 1; specifically, the material of the package cover 5 is preferably glass;
  • auxiliary electrode 7 disposed on a portion of the package cover 5 corresponding to the non-light-emitting region A2 of the top emission type OLED 3; specifically, the auxiliary electrode 7 is a metal wire or a nano silver paste;
  • the nano gold spheres 9 include plastic microparticles 91, a nickel layer 92 plated on the outer surface of the plastic microparticles 91, and A gold layer 93 plated on the outer surface of the nickel layer 92; the nano gold ball 9 is coated on the auxiliary electrode 7 corresponding to the position of the switching TFT T1 and the driving TFT T2.
  • the nano gold ball 9 turns on the auxiliary electrode 7 and the transparent cathode 33 of the top emission type OLED 3, can enhance the conductivity of the transparent cathode 33, improve the conductivity of the transparent cathode 33, and reduce the IR drop of the large-sized OLED display device. . It is to be noted that since the auxiliary electrode 7 is disposed on the package cover 5 corresponding to the non-light-emitting area A2 of the top emission type OLED 3, instead of being directly disposed on the transparent cathode of the top emission type OLED as in the prior art.
  • the process of the auxiliary electrode 7 is not limited by the process temperature, and there is no problem of polluting or destroying the cathode and the organic light-emitting material layer of the top emission type OLED, thereby avoiding damage to the organic light-emitting material layer and the cathode.
  • an auxiliary electrode is prepared on a portion of the package cover corresponding to the non-light emitting region of the top emission type OLED, and the nano gold ball is coated on the auxiliary electrode.
  • the nano gold ball conducts the auxiliary electrode and the transparent cathode of the top emission type OLED, thereby avoiding damage to the organic light emitting material layer and the cathode by the auxiliary electrode process, and enhancing the conductivity of the cathode. , reducing the IR drop of large-size OLED display devices.
  • the top emission type OLED display device structure of the invention the auxiliary electrode is disposed on the package cover plate, and a single layer of nano gold spheres is coated on the auxiliary electrode, and the auxiliary electrode of the nano gold ball is connected to the transparent cathode of the top emission type OLED It can enhance the conductivity of the cathode and reduce the IR drop of the large-sized OLED display device.

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Abstract

L'invention concerne un procédé de fabrication d'un dispositif d'affichage OLED de type à émission supérieure et une structure de celui-ci. Le procédé de fabrication d'un dispositif d'affichage OLED à émission supérieure consiste à : préparer une électrode auxiliaire (7) sur une partie, correspondant à une zone non électroluminescente (A2) d'une OLED à émission supérieure (3), d'une plaque de couvercle d'emballage (5); revêtir une nanosphère dorée (9) sur l'électrode auxiliaire (7); et après que la plaque de couvercle d'emballage (5) et un substrat de réseau TFT (1) soient appariés et emballés, la nanosphère dorée (9) conduisant l'électrode auxiliaire (7) et une cathode transparente (33) de l'OLED à émission supérieure (3). La présente invention peut empêcher l'endommagement d'une procédure de fabrication d'une électrode auxiliaire sur une couche de matériau électroluminescent organique et une cathode, améliorer la conductivité de la cathode et réduire une chute IR d'un dispositif d'affichage OLED de grande taille.
PCT/CN2017/076771 2017-02-15 2017-03-15 Procédé de fabrication de dispositif d'affichage oled de type à émission supérieure et structure de celui-ci WO2018149009A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710081873.3A CN106803547B (zh) 2017-02-15 2017-02-15 顶发射型oled显示器件的制作方法及结构
CN201710081873.3 2017-02-15

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CN110137379B (zh) * 2019-05-31 2022-04-22 京东方科技集团股份有限公司 封装盖板、封装盖板的制备方法、显示面板
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CN111129361B (zh) 2019-12-26 2021-04-27 深圳市华星光电半导体显示技术有限公司 显示面板制造方法以及显示面板
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EP4216295A4 (fr) * 2021-04-28 2024-06-26 BOE Technology Group Co., Ltd. Substrat d'affichage, panneau d'affichage et procédé de fabrication de substrat d'affichage

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