WO2018145699A3 - Verfahren zum texturieren einer oberfläche eines halbleitermaterials sowie vorrichtung zur durchführung des verfahrens - Google Patents

Verfahren zum texturieren einer oberfläche eines halbleitermaterials sowie vorrichtung zur durchführung des verfahrens Download PDF

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Publication number
WO2018145699A3
WO2018145699A3 PCT/DE2018/100110 DE2018100110W WO2018145699A3 WO 2018145699 A3 WO2018145699 A3 WO 2018145699A3 DE 2018100110 W DE2018100110 W DE 2018100110W WO 2018145699 A3 WO2018145699 A3 WO 2018145699A3
Authority
WO
WIPO (PCT)
Prior art keywords
texturing
carrying
semiconductor material
pole
disclosed
Prior art date
Application number
PCT/DE2018/100110
Other languages
English (en)
French (fr)
Other versions
WO2018145699A2 (de
Inventor
Holger KÜHNLEIN
Wolfgang Dümpelfeld
John BURSCHIK
Benedikt STRAUB
Original Assignee
RENA Technologies GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RENA Technologies GmbH filed Critical RENA Technologies GmbH
Priority to KR1020197020864A priority Critical patent/KR20190116266A/ko
Priority to EP18707621.1A priority patent/EP3580786A2/de
Priority to CN201880011323.7A priority patent/CN110383494A/zh
Priority to US16/484,849 priority patent/US20200044100A1/en
Priority to JP2019542181A priority patent/JP2020508563A/ja
Publication of WO2018145699A2 publication Critical patent/WO2018145699A2/de
Publication of WO2018145699A3 publication Critical patent/WO2018145699A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices

Abstract

Verfahren zum Texturieren wenigstens eines Teils (4) einer Oberfläche eines Halbleitermaterials (2), bei welchem der wenigstens eine Teil (4) der Oberfläche mit einer Ätzlösung (6) in Kontakt gebracht wird; der wenigstens eine Teil (4) der Oberfläche elektrisch leitend mit einem Pluspol (9) einer Stromquelle (8) verbunden und als positive Elektrode (16) verwendet wird; eine in der Ätzlösung (6) angeordnete negative Elektrode (14) elektrisch leitend mit einem Minuspol (10) der Stromquelle (18) verbunden wird und elektrischer Strom von dem Pluspol (9) zu dem Minuspol (10) geführt und auf diese Weise der wenigstens eine Teil (4) der Oberfläche elektrochemisch geätzt wird, sowie Vorrichtung (1; 30; 70) zur Durchführung des Verfahrens.
PCT/DE2018/100110 2017-02-09 2018-02-08 Verfahren zum texturieren einer oberfläche eines halbleitermaterials sowie vorrichtung zur durchführung des verfahrens WO2018145699A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020197020864A KR20190116266A (ko) 2017-02-09 2018-02-08 반도체 재료의 표면을 텍스처링하는 방법 및 이러한 방법을 수행하는 장치
EP18707621.1A EP3580786A2 (de) 2017-02-09 2018-02-08 Verfahren zum texturieren einer oberfläche eines halbleitermaterials sowie vorrichtung zur durchführung des verfahrens
CN201880011323.7A CN110383494A (zh) 2017-02-09 2018-02-08 对半导体材料的表面进行纹理化的方法和实施该方法的设备
US16/484,849 US20200044100A1 (en) 2017-02-09 2018-02-08 Method For Texturing A Surface Of A Semiconductor Material And Device For Carrying Out The Method
JP2019542181A JP2020508563A (ja) 2017-02-09 2018-02-08 半導体材料の表面を粗面化する方法、および、当該方法を実行するための装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017102632 2017-02-09
DE102017102632.0 2017-02-09

Publications (2)

Publication Number Publication Date
WO2018145699A2 WO2018145699A2 (de) 2018-08-16
WO2018145699A3 true WO2018145699A3 (de) 2018-10-25

Family

ID=61386660

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2018/100110 WO2018145699A2 (de) 2017-02-09 2018-02-08 Verfahren zum texturieren einer oberfläche eines halbleitermaterials sowie vorrichtung zur durchführung des verfahrens

Country Status (7)

Country Link
US (1) US20200044100A1 (de)
EP (1) EP3580786A2 (de)
JP (1) JP2020508563A (de)
KR (1) KR20190116266A (de)
CN (1) CN110383494A (de)
TW (1) TW201841381A (de)
WO (1) WO2018145699A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020103531A1 (de) * 2020-02-11 2021-08-12 RENA Technologies GmbH Elektrode, deren Verwendung, Akkumulator sowie Verfahren zur Herstellung einer Elektrode

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090101396A (ko) * 2008-03-23 2009-09-28 다이나믹솔라디자인 주식회사 다공성 반사 방지막을 갖는 광기전력소자 및 제조 방법
WO2009120631A2 (en) * 2008-03-25 2009-10-01 Applied Materials, Inc. Surface cleaning and texturing process for crystalline solar cells
WO2012159710A2 (en) * 2011-05-21 2012-11-29 Meyer Burger Technology Ag Methods for the surface treatment of metal, metalloid and semiconductor solids
DE102013221522A1 (de) * 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
DE102013219886A1 (de) * 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
DE102013219839A1 (de) * 2013-10-01 2015-04-16 lP RENA GmbH Nasschemische Kontaktierung zur Herstellung von porösem Silizium
WO2017097933A1 (de) * 2015-12-11 2017-06-15 Nexwafe Gmbh Vorrichtung und verfahren zum einseitigen ätzen eines halbleitersubstrats
WO2018121810A2 (de) * 2016-12-30 2018-07-05 RENA Technologies GmbH Verfahren und vorrichtung zur behandlung einer objektoberfläche mittels einer behandlungslösung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012165288A1 (ja) * 2011-06-03 2012-12-06 三洋電機株式会社 太陽電池の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090101396A (ko) * 2008-03-23 2009-09-28 다이나믹솔라디자인 주식회사 다공성 반사 방지막을 갖는 광기전력소자 및 제조 방법
WO2009120631A2 (en) * 2008-03-25 2009-10-01 Applied Materials, Inc. Surface cleaning and texturing process for crystalline solar cells
WO2012159710A2 (en) * 2011-05-21 2012-11-29 Meyer Burger Technology Ag Methods for the surface treatment of metal, metalloid and semiconductor solids
DE102013221522A1 (de) * 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
DE102013219886A1 (de) * 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
DE102013219839A1 (de) * 2013-10-01 2015-04-16 lP RENA GmbH Nasschemische Kontaktierung zur Herstellung von porösem Silizium
WO2017097933A1 (de) * 2015-12-11 2017-06-15 Nexwafe Gmbh Vorrichtung und verfahren zum einseitigen ätzen eines halbleitersubstrats
WO2018121810A2 (de) * 2016-12-30 2018-07-05 RENA Technologies GmbH Verfahren und vorrichtung zur behandlung einer objektoberfläche mittels einer behandlungslösung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BASTIDE S. ET AL.: "Photo-electrochemical texturisation on n-type crystalline Si", 21ST EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE : PROCEEDINGS OF THE INTERNATIONAL CONFERENCE HELD IN DRESDEN, GERMANY, 4 - 8 SEPTEMBER 2006, WIP RENEWABLE ENERGIES, MÜNCHEN, 4 September 2006 (2006-09-04), XP040512312, ISBN: 978-3-936338-20-1 *

Also Published As

Publication number Publication date
TW201841381A (zh) 2018-11-16
EP3580786A2 (de) 2019-12-18
CN110383494A (zh) 2019-10-25
KR20190116266A (ko) 2019-10-14
US20200044100A1 (en) 2020-02-06
WO2018145699A2 (de) 2018-08-16
JP2020508563A (ja) 2020-03-19

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