CN103762264B - GaN基UV探测传感器 - Google Patents
GaN基UV探测传感器 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 8
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 5
- 239000010980 sapphire Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 4
- 230000004043 responsiveness Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 4
- 238000004064 recycling Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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- H—ELECTRICITY
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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Abstract
本发明涉及一种GaN基UV探测传感器，包括衬底，其特征是：在所述衬底上表面依次设置U-GaN层、AlGaN层和N型GaN层，在N型GaN层上表面分别设置欧姆电极和肖特基电极。所述欧姆电极为Ti/Al/Ti/Au金属层。所述肖特基电极的材质为金属Pt。所述欧姆电极与肖特基电极之间存在一定距离。所述衬底为蓝宝石衬底。本发明有效降低了传感器的漏电流，提高了传感器的响应度；并且生产工艺简单、需求设备少、成本低。
Description
技术领域
本发明涉及一种GaN基UV探测传感器，属于半导体技术领域。
背景技术
UV传感器可用于测量UV辐射，现有技术中的UV传感器大多采用硅基，主要存下以下缺陷：（1）传感器的漏电流较大；（2）传感器的响应度较差。
发明内容
本发明的目的是克服现有技术中存在的不足，提供一种GaN基UV探测传感器，提高了传感器的响应度。
按照本发明提供的技术方案，所述GaN基UV探测传感器，包括衬底，其特征是：在所述衬底上表面依次设置U-GaN层、AlGaN层和N型GaN层，在N型GaN层上表面分别设置欧姆电极和肖特基电极。
所述欧姆电极为Ti/Al/Ti/Au金属层。
所述肖特基电极的材质为金属Pt。
所述欧姆电极与肖特基电极之间存在一定距离。
所述衬底为蓝宝石衬底。
本发明有效降低了传感器的漏电流，提高了传感器的响应度；并且生产工艺简单、需求设备少、成本低。
附图说明
图1为本发明的剖面图。
具体实施方式
下面结合具体附图对本发明作进一步说明。
如图1所示：所述GaN基UV探测传感器包括衬底1、U-GaN层2、AlGaN层3、N型GaN层4、欧姆电极5、肖特基电极6等。
如图1所示，本发明包括衬底1，衬底1为蓝宝石衬底；在所述衬底1上表面依次设置U-GaN层2、AlGaN层3和N型GaN层4，在N型GaN层4上表面分别设置欧姆电极5和肖特基电极6；
所述欧姆电极5为Ti/Al/Ti/Au金属层；
所述肖特基电极6的材质为金属Pt，金属Pt与N型GaN层4形成肖特基接触；
所述欧姆电极5与肖特基电极6之间存在一定距离。
上述GaN基UV探测传感器的制造方法，采用以下步骤：
步骤1：利用MOCVD设备在蓝宝石衬底1上生长U-GaN层2；
步骤2：在U-GaN层2上生长AlGaN层3；
步骤3：在AlGaN层3上生长N-GaN层4；
步骤4：利用光刻技术在N型GaN层4上制作欧姆电极5的图形，再利用电子束蒸发设备，制作Ti/Al/Ti/Au金属层；
步骤5：利用剥离方法将多余的金属层去除，并利用去胶剂将光刻胶去除，仅保留欧姆电极5；
步骤6：利用RTA合金炉进行高温合金，使欧姆电极5与N型GaN层形成良好的欧姆接触；
步骤7：利用光刻技术在N型GaN层4上制作肖特基电极6的图形，再利用电子束蒸发设备，制作Pt金属层；
步骤8：利用剥离方法将多余的金属Pt去除，并利用去胶剂将光刻胶去除，仅保留肖特基电极6；
步骤9：利用减薄、研磨设备将晶圆减薄到100~200um，再利用激光切割机将晶圆上的器件进行分离。
本发明采用AlGaN层3中的Al组分，可以实现禁带宽度在3.4~6.2eV区间连续可控，实现对200~365nmUV光的探测，利用Pt金属与N型GaN层形成良好的肖特基接触，有效降低传感器的漏电流，提高传感器的响应度；本发明通过欧姆电极5与肖特基电极6之间的一定间距，以及肖特基电极6的面积，可以更进一步提高传感器的响应度；本发明的UV传感器在18mW/cm－2的辐射强度下，最高可以产生200mV的电信号，配合普通读取电路即可实现对UV光的探测，具有生产响应度高、工艺简单、需求设备少、成本低等特点。
Claims (5)
1.一种GaN基UV探测传感器，包括衬底（1），其特征是：在所述衬底（1）上表面依次设置U-GaN层（2）、AlGaN层（3）和N型GaN层（4），在N型GaN层（4）上表面分别设置欧姆电极（5）和肖特基电极（6）。
2.如权利要求1所述的GaN基UV探测传感器，其特征是：所述欧姆电极（5）为Ti/Al/Ti/Au金属层。
3.如权利要求1所述的GaN基UV探测传感器，其特征是：所述肖特基电极（6）的材质为金属Pt。
4.如权利要求1所述的GaN基UV探测传感器，其特征是：所述欧姆电极（5）与肖特基电极（6）之间存在一定距离。
5.如权利要求1所述的GaN基UV探测传感器，其特征是：所述衬底（1）为蓝宝石衬底。
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| CN107482070B (zh) * | 2017-07-17 | 2019-01-08 | 中山大学 | 一种凹槽型电极结构的InGaN基MSM可见光光电探测器 |
| CN109346405B (zh) * | 2018-11-23 | 2021-12-03 | 江苏新广联科技股份有限公司 | 一种GaN基SBD倒装芯片的制备方法 |
| CN114242800B (zh) * | 2021-11-24 | 2023-08-22 | 华南理工大学 | 日盲AlGaN紫外光电探测器及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6104074A (en) * | 1997-12-11 | 2000-08-15 | Apa Optics, Inc. | Schottky barrier detectors for visible-blind ultraviolet detection |
| CN101005105A (zh) * | 2007-01-19 | 2007-07-25 | 南京大学 | 氮化镓基共振腔增强型紫外光电探测器及制备方法 |
| CN203800065U (zh) * | 2014-01-07 | 2014-08-27 | 江苏新广联科技股份有限公司 | GaN基UV探测传感器 |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6104074A (en) * | 1997-12-11 | 2000-08-15 | Apa Optics, Inc. | Schottky barrier detectors for visible-blind ultraviolet detection |
| CN101005105A (zh) * | 2007-01-19 | 2007-07-25 | 南京大学 | 氮化镓基共振腔增强型紫外光电探测器及制备方法 |
| CN203800065U (zh) * | 2014-01-07 | 2014-08-27 | 江苏新广联科技股份有限公司 | GaN基UV探测传感器 |
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