WO2018143838A1 - Ionizing radiation converter with cross-linked structure and its fabrication method - Google Patents
Ionizing radiation converter with cross-linked structure and its fabrication method Download PDFInfo
- Publication number
- WO2018143838A1 WO2018143838A1 PCT/RU2017/000663 RU2017000663W WO2018143838A1 WO 2018143838 A1 WO2018143838 A1 WO 2018143838A1 RU 2017000663 W RU2017000663 W RU 2017000663W WO 2018143838 A1 WO2018143838 A1 WO 2018143838A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- conductivity type
- junction
- horizontal
- doped
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 230000005865 ionizing radiation Effects 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 24
- 230000002285 radioactive effect Effects 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 230000005855 radiation Effects 0.000 abstract description 17
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000005611 electricity Effects 0.000 abstract description 6
- 230000001131 transforming effect Effects 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000001459 lithography Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000000747 cardiac effect Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- -1 boron ion Chemical class 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052722 tritium Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- This invention relates to converters of ionizing radiation energy to electricity (EMF) and can be used in drone aviation, highly explosive areas, e.g. in mines, in nighttime indicators located in difficultly accessible areas, in medicine (cardiac pacemakers) etc.
- EMF ionizing radiation energy to electricity
- Disadvantages of the structure are the relatively small volume of the irradiated semiconducting material due to the small irradiated surface area and the limited penetration depth of ionizing beta radiation (less than 25 ⁇ ) the short minority carrier charge lifetime due to the structural defects during vanadium doping of the working area.
- the surface of the microchannel walls as well as the front and rear surfaces of semiconductor wafer have microtextures, almost the entire semiconductor wafer surface except its side surface comprises a doped layer forming a p-n junction and a diode structure, doped layer is covered with a radioactive semiconductor layer acting as a current collecting contact in to the diode structure and is a beta radiation source, the doped layer and the bottom layer replicate the shape of the textured surface, and the contact to the base region of the semiconductor wafer is located on the side surface.
- Disadvantages of the semiconductor converter are the complex technology of its production and filling of the penetrating channels with solid- state radioactive isotopes. Low quality of the textured surface of penetrating channels and hence intense leakage that do not allow achieving high specific power of the converter.
- the prototype of the first object of this invention is a 3D structure of a semiconductor beta-voltaic converter, transforming radiation to electricity (US 20080199736, publ. 21.08.2008) wherein at the top surface of a low-doped n (p) conductivity type semiconductor wafer vertical are located channels, the surfaces of which comprise heavily doped p + ⁇ n + ) regions forming vertical p-n junctions with the semiconductor wafer, the channels are filled with conducting radioactive isotope material forming the electrode, i.e. anode (cathode) of the converter diode, and the bottom wafer surface a horizontal heavily doped n + (p + ) contact layer is located the surface of which a metallic electrode of anode (cathode) is situated .
- the prototype of the second subject of this invention is the method of fabricating a 3D structure of a semiconductor diode used as a beta-voltaic converter of the beta radiation of 63 Ni isotope to electricity (US 20080199736, publ. 21.08.2008) which comprises the formation of a horizontal heavily doped n + (p + ) conductivity type layer on the bottom surface of a low-doped n (p) conductivity type wafer, the formation of vertical channels by etching the top surface of the semiconductor wafer, doping of the channel wall surfaces, the deposition of radioactive isotope metal for electrode, i.e.
- anode onto the top surface of the wafer and into the channels, and the deposition of a metal layer for electrode, i.e. anode (cathode), onto the bottom surface of the wafer.
- a metal layer for electrode i.e. anode (cathode) onto the bottom surface of the wafer.
- Disadvantages of the known method are the complex and insufficiently reproducible technology of synthesizing p-n junctions in the channels reducing the efficiency of the converter and, most importantly, a high level of dark current (I D ) of the bulk p-n junction dramatically reducing the idle voltage (Ui d ) of the converter and hence the maximum output power (P max ) because
- the technical result of the first subject of this invention is an increase in the energy E u per unit volume of the converter due to the large emitting surface of the radioactive isotope (S em ) and hence the area of the bulk p-n junction (S pn>b ).
- the design of the ionizing radiation converter with cross-linked structure comprises a weakly doped n(p) conductivity type semiconductor wafer the bulk of which comprises vertical channels one end of which is connected to the wafer surface, and the channel wall surfaces comprise heavily doped p + ⁇ n + ) conductivity type regions forming vertical p-n junctions with the semiconductor wafer.
- the channels are filled with conducting radioactive isotope material forming the electrode, i.e. anode (cathode), of the converter diode and the bottom surface of the wafer comprises a horizontal heavily doped n + (p + ) conductivity type layer the surface of which comprises a metallic electrode, i.e. anode (cathode), of the converter.
- conducting radioactive isotope material forming the electrode, i.e. anode (cathode) of the converter diode and the bottom surface of the wafer comprises a horizontal heavily doped n + (p + ) conductivity type layer the surface of which comprises a metallic electrode, i.e. anode (cathode), of the converter.
- the top surface of the wafer comprises a horizontal heavily doped p + (n + ) conductivity type region forming a horizontal p-n junction.
- the surfaces of the vertical channels are low-doped and have the n(p) conductivity type, wherein one end of each of the vertical channels is connected to the bottom wafer surface and the other end, i.e. the bottom of each of the vertical channels is at a distance from the top surface of the wafer, the distance being greater than the total depth of the horizontal p-n junction in the space charge region formed by it.
- the technical result of the second subject of this invention includes a simplification of the converter fabrication technology.
- the fabrication method comprises the formation of a horizontal heavily doped n + (p + ) conductivity type layer on the bottom surface of a low-doped n (p) conductivity type wafer, the formation of vertical channels by etching the top surface of the semiconductor wafer, doping of the channel wall surfaces, the deposition of radioactive isotope metal for electrode, i.e. anode (cathode), onto the top surface of the wafer and into the channels, and the deposition of a metal layer for electrode, i.e. anode (cathode), onto the bottom surface of the wafer.
- the vertical channels are formed by etching the bottom surfaces of the low-doped n(p) conductivity type wafer, following which the channel wall surfaces are doped with a donor (acceptor) impurity and a horizontal p-n junction is formed on the top surface of the wafer by doping with an acceptor (donor) impurity.
- FIG. 1 shows a section of the converter structure for the first structure example
- Fig. 2 shows a bottom view of the converter structure for the first structure example
- Fig. 3 shows a section of the converter structure for the second structure example
- Fig. 4 shows a bottom view of the converter structure for the second structure example.
- the design of the converter of this invention comprises a low-doped n(p) conductivity type semiconductor wafer (1), the bottom surface of the wafer comprises an n + (p + ) conductivity type contact layer (2), the wafer bulk comprises vertical channels (3) wherein one end of each of the vertical channels is connected to the bottom wafer surface, the top wafer surface comprises an n + (p + ) conductivity type region (4) of a horizontal p-n junction wherein the region forms a space charge region (5) with the wafer, the surface of the n + (p + ) conductivity type region comprises metallic radioactive isotope forming the anode (6) of the diode, and the bottom wafer surface and the channels comprise metallic radioactive isotope forming the cathode (7).
- the operation principle of the converter of this invention is based on the ionization of the semiconducting material (e.g. silicon) by beta radiation of isotopes, e.g. nickel, tritium, strontium, cobalt etc..
- the electron/hole pairs forming due to the irradiation are separated by the field of the p-n junction in the space charge region and produce a difference of potentials between the p + and n regions of the converter (the photovoltaic EMF). Simultaneously, part of the electron/hole pairs can alternatively be accumulated by the field of the p-n junction in the quasi-neutral region at the diffusion length distance.
- Embodiments of the Invention Different examples of beta converter design are possible that differ in their technical parameters.
- the converter shown in Figs. 1&2 has the highest unit power but is quite expensive due to the large quantity of nickel in the channels.
- the converter shown in Figs. 3&4 requires far smaller quantity of 63 Ni and is therefore cheaper while having a lower unit power.
- the isotope source can be selected, for example, as 63 Ni having a long half decay time of 50 years and emitting electron radiation with an average energy of 17 keV and a maximum energy of 64 keV which bears almost no hazard for health. This electron energy is lower than the defect formation energy in silicon which is 160 keV.
- the absorption depth of electrons with an average energy of 17 keV in silicon is approx. 3.0 ⁇ ; for 90% absorption this depth is 12 ⁇ ⁇ ⁇ .
- the radiation source can be not necessarily a beta radiation source but alternatively an alpha radiation
- the fabrication method of the converter of this invention comprises the following sequence of process steps.
- the leakage current of the equal area p-n junction formed in the channel is three orders of magnitude greater:
- ⁇ is the thermal potential and I sc is the short circuit current generated by the radioactive radiation.
- the converter power is determined by the following relationship:
- P max . p i is 1.7 nW
- P max.b is 0.08 nW.
- the technical advantage of this invention are an increase in the unit power and the efficiency of the converter and a simplification and a lower price of its technology.
- the ionization current receiver is a horizontal (not vertical) p-n junction having a relatively small area (S p-n , nsi ) located on a high quality polished top surface of the wafer, this minimizing the dark current and increasing the idle voltage and hence the unit power of the converter.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Dc-Dc Converters (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019541228A JP2020507073A (ja) | 2017-01-31 | 2017-09-11 | 架橋構造を有する電離放射線コンバータおよびその製造方法 |
| KR1020197024967A KR102595089B1 (ko) | 2017-01-31 | 2017-09-11 | 가교 구조의 이온화 방사선 변환기 및 이의 제조 방법 |
| DE112017006974.2T DE112017006974T5 (de) | 2017-01-31 | 2017-09-11 | Konverter für ionisierende Strahlung mit einer Netzstruktur sowie Verfahren zu seiner Herstellung |
| CN201780089174.1A CN110494929A (zh) | 2017-01-31 | 2017-09-11 | 具有交联结构的电离辐射转换器及其制造方法 |
| EA201900377A EA201900377A1 (ru) | 2017-01-31 | 2017-09-11 | Преобразователь ионизирующих излучений с сетчатой объемной структурой и способ его изготовления |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2017103167A RU2659618C1 (ru) | 2017-01-31 | 2017-01-31 | Преобразователь ионизирующих излучений с сетчатой объемной структурой и способ его изготовления |
| RU2017103167 | 2017-01-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018143838A1 true WO2018143838A1 (en) | 2018-08-09 |
Family
ID=62815832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/RU2017/000663 WO2018143838A1 (en) | 2017-01-31 | 2017-09-11 | Ionizing radiation converter with cross-linked structure and its fabrication method |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP2020507073A (ja) |
| KR (1) | KR102595089B1 (ja) |
| CN (1) | CN110494929A (ja) |
| DE (1) | DE112017006974T5 (ja) |
| EA (1) | EA201900377A1 (ja) |
| RU (1) | RU2659618C1 (ja) |
| WO (1) | WO2018143838A1 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113223743B (zh) * | 2021-05-08 | 2023-10-20 | 西北核技术研究所 | 一种基于微孔阵列准直器的α放射源核电池 |
| CN114203330B (zh) * | 2021-12-13 | 2024-09-10 | 中国核动力研究设计院 | 一种超薄镍-63辐射源及其制备方法、应用 |
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| US20080199736A1 (en) * | 2007-02-16 | 2008-08-21 | Gadeken Larry L | Apparatus for generating electrical current from radioactive material and method of making same |
| US7939986B2 (en) * | 2005-08-25 | 2011-05-10 | Cornell Research Foundation, Inc. | Betavoltaic cell |
| RU2605783C1 (ru) * | 2015-08-10 | 2016-12-27 | федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Тольяттинский государственный университет | Планарный высоковольтный фото- и бетавольтаический преобразователь и способ его изготовления |
| RU2608311C2 (ru) * | 2015-05-14 | 2017-01-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Преобразователь оптических и радиационных излучений и способ его изготовления |
| RU2608313C2 (ru) * | 2015-05-14 | 2017-01-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Высоковольтный преобразователь ионизирующих излучений и способ его изготовления |
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| JPH01125988A (ja) * | 1987-11-11 | 1989-05-18 | Hitachi Ltd | 太陽電池素子の製造方法 |
| US5642014A (en) * | 1995-09-27 | 1997-06-24 | Lucent Technologies Inc. | Self-powered device |
| US20040154656A1 (en) * | 2003-02-10 | 2004-08-12 | Science & Technology Corporation @ Unm | Nuclear radiation fueled power cells |
| US7138701B2 (en) * | 2003-10-02 | 2006-11-21 | International Business Machines Corporation | Electrostatic discharge protection networks for triple well semiconductor devices |
| CN100414719C (zh) * | 2005-10-24 | 2008-08-27 | 西北工业大学 | 微电池及其制作方法 |
| US20100071751A1 (en) * | 2008-09-22 | 2010-03-25 | Electronics And Telecommunications Research Institute | Photo-induced metal-insulator-transition material complex for solar cell, solar cell and solar cell module comprising the same |
| RU2452060C2 (ru) * | 2010-05-27 | 2012-05-27 | Виталий Викторович Заддэ | Полупроводниковый преобразователь бета-излучения в электроэнергию |
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| CN102354540B (zh) | 2011-10-19 | 2013-08-14 | 西安电子科技大学 | I层钒掺杂的pin型核电池及其制作方法 |
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| RU2539109C1 (ru) * | 2013-09-26 | 2015-01-10 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский технологический университет "МИСиС" | Многопереходный кремниевый монокристаллический преобразователь оптических и радиационных излучений |
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| RU168184U1 (ru) * | 2016-04-22 | 2017-01-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный аэрокосмический университет имени академика М.Ф. Решетнева" (СибГАУ) | Планарный преобразователь ионизирующих излучений с накопительным конденсатором |
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2017
- 2017-01-31 RU RU2017103167A patent/RU2659618C1/ru active
- 2017-09-11 CN CN201780089174.1A patent/CN110494929A/zh active Pending
- 2017-09-11 DE DE112017006974.2T patent/DE112017006974T5/de not_active Withdrawn
- 2017-09-11 EA EA201900377A patent/EA201900377A1/ru unknown
- 2017-09-11 KR KR1020197024967A patent/KR102595089B1/ko active IP Right Grant
- 2017-09-11 WO PCT/RU2017/000663 patent/WO2018143838A1/en active Application Filing
- 2017-09-11 JP JP2019541228A patent/JP2020507073A/ja active Pending
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| US7939986B2 (en) * | 2005-08-25 | 2011-05-10 | Cornell Research Foundation, Inc. | Betavoltaic cell |
| US20080199736A1 (en) * | 2007-02-16 | 2008-08-21 | Gadeken Larry L | Apparatus for generating electrical current from radioactive material and method of making same |
| RU2608311C2 (ru) * | 2015-05-14 | 2017-01-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Преобразователь оптических и радиационных излучений и способ его изготовления |
| RU2608313C2 (ru) * | 2015-05-14 | 2017-01-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Высоковольтный преобразователь ионизирующих излучений и способ его изготовления |
| RU2605783C1 (ru) * | 2015-08-10 | 2016-12-27 | федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Тольяттинский государственный университет | Планарный высоковольтный фото- и бетавольтаический преобразователь и способ его изготовления |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190109495A (ko) | 2019-09-25 |
| RU2659618C1 (ru) | 2018-07-03 |
| JP2020507073A (ja) | 2020-03-05 |
| CN110494929A (zh) | 2019-11-22 |
| DE112017006974T5 (de) | 2019-10-17 |
| EA201900377A1 (ru) | 2019-12-30 |
| KR102595089B1 (ko) | 2023-10-26 |
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