WO2018137328A1 - 蒸镀掩膜版及制作方法及蒸镀方法 - Google Patents

蒸镀掩膜版及制作方法及蒸镀方法 Download PDF

Info

Publication number
WO2018137328A1
WO2018137328A1 PCT/CN2017/095740 CN2017095740W WO2018137328A1 WO 2018137328 A1 WO2018137328 A1 WO 2018137328A1 CN 2017095740 W CN2017095740 W CN 2017095740W WO 2018137328 A1 WO2018137328 A1 WO 2018137328A1
Authority
WO
WIPO (PCT)
Prior art keywords
vapor deposition
deposition mask
evaporation
organic light
shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/095740
Other languages
English (en)
French (fr)
Inventor
袁洪光
千必根
胡岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US15/751,467 priority Critical patent/US11155913B2/en
Publication of WO2018137328A1 publication Critical patent/WO2018137328A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to an evaporation mask, a manufacturing method thereof, and an evaporation method.
  • an organic light emitting layer is usually formed by an EV (Evaporate) process.
  • EV Electrode
  • adjacent organic light-emitting layers of different colors are prone to color mixing risk.
  • the embodiments of the present disclosure provide an evaporation mask, a manufacturing method, and an evaporation method to avoid the risk of color mixing of adjacent organic light-emitting layers of different colors.
  • an embodiment of the present disclosure provides an evaporation mask, comprising a body, an evaporation opening region opened on the body, and a plurality of shielding portions disposed on the body.
  • the shielding portion is disposed between adjacent vapor deposition opening regions.
  • the shielding portion is disposed only between adjacent vapor deposition opening regions for vaporizing different color organic light emitting layers.
  • the shielding portion has a thickness of 2.5 um to 3 um and a line width of 8 um to 12 um.
  • the shape of the shielding portion is a hemisphere, a hemisphere, a cylinder or a rectangular parallelepiped.
  • the shielding portion is formed by using a photoresist.
  • the shielding portion and the vapor deposition opening region are alternately arranged in at least one direction.
  • the body is a mesh structure having a plurality of meshes
  • the vaporized open area is a mesh in a mesh structure.
  • the body comprises a frame portion, a plurality of first extending portions and a plurality of second extending portions; the first extending portion and the second extending portion are both strip-shaped and disposed inside the frame portion
  • the plurality of first extensions extend along the row direction and are spaced apart from each other in the column direction; the plurality of second extensions extend along the column direction and are spaced apart from each other in the row direction; The plurality of first extensions and the plurality of second extensions intersect each other to form the plurality of meshes.
  • the shielding portions are evenly arranged in a matrix on the plurality of second extending portions; in the row direction, the shielding portions are staggered with the vapor deposition opening regions; in the column direction The shielding portion is alternately disposed with the plurality of first extension portions.
  • the plurality of shielding portions cover all of the second extensions.
  • each of the shielding portions is strip-shaped and extends along the column direction, and the plurality of shielding portions are spaced apart in the row direction.
  • the plurality of shielding portions cover all of the second extensions and all of the first extensions.
  • the plurality of shielding portions are formed in a grid shape.
  • the present disclosure also provides an evaporation method for forming an organic light emitting layer of an organic light emitting diode display substrate by evaporation of the vapor deposition mask described above, comprising:
  • the vapor deposition mask and the substrate substrate are oppositely disposed in such a manner that the shielding portion on the vapor deposition mask directly faces the pixel defining layer on the substrate;
  • the organic light-emitting material is evaporated by using the vapor deposition mask as a mask.
  • the vapor deposition mask and the substrate substrate are disposed opposite each other in such a manner that the shielding portion on the evaporation mask directly faces the pixel defining layer on the substrate substrate.
  • the method also includes:
  • a pixel defining layer having a thickness of 0.75 um - 1 um and a line width of 8 um - 12 um is formed on the base substrate.
  • the present disclosure also provides an organic light emitting diode display substrate comprising an organic light emitting layer formed by the above evaporation method.
  • the OLED display substrate comprises: a pixel defining layer having a thickness of 0.75 um-1 um and a line width dimension of 8 um-12 um.
  • the present disclosure also provides an organic light emitting diode display device including the above organic light emitting diode display substrate.
  • the present disclosure also provides a method for fabricating an evaporation mask for forming the vapor deposition mask described above, the method comprising:
  • the evaporation masking plate comprising a body and an evaporation opening region opened on the body;
  • a photoresist layer is formed on the vapor deposition mask plate, and the photoresist layer is subjected to a photolithography process to form a shielding portion between adjacent vapor deposition opening regions.
  • FIG. 1 is a schematic diagram of a vapor deposition method of an organic light emitting layer of an organic light emitting diode display substrate in the related art
  • FIG. 2 is a schematic cross-sectional view of an evaporation mask according to an embodiment of the present disclosure
  • FIG. 3 is a schematic view showing a method of forming an organic light emitting layer of an organic light emitting diode display substrate by using the vapor deposition mask of FIG. 2;
  • FIG. 4 is a bottom view of an evaporation mask according to an embodiment of the present disclosure.
  • FIG. 5 is a bottom view of an evaporation mask according to another embodiment of the present disclosure.
  • FIG. 6 is a bottom view of an evaporation mask according to still another embodiment of the present disclosure.
  • FIG. 7 is a schematic cross-sectional view of an evaporation mask according to an embodiment of the present disclosure.
  • FIG. 1 is a schematic view showing a vapor deposition method of an organic light-emitting layer of an organic light-emitting diode display substrate in the related art.
  • an FMM (Fine Metal Mask) mask 10 is required as a mask to form organic light-emitting layers of different colors on the organic light-emitting diode display substrate 20.
  • the FMM mask 10 includes a body 11 and spaced apart vapor deposition opening regions 12 formed on the body 11.
  • the organic light emitting diode display substrate 20 includes a base substrate 21, an anode 22, and a pixel defining layer 23.
  • the embodiment of the present disclosure provides an evaporation mask, a manufacturing method, and an evaporation method, which are used to solve the problem that when the organic light emitting layer of the organic light emitting diode display substrate is vapor-deposited, a pixel defining layer and a spacer having a large thickness are required to be disposed.
  • the organic light-emitting diodes exhibit a problem of low substrate resolution and aperture ratio and high cost.
  • FIG. 2 is a schematic cross-sectional view of an evaporation mask according to an embodiment of the present disclosure.
  • the vapor deposition mask 100 includes a body 101 , an evaporation opening region 102 formed on the body 101 , and a a shielding portion 103 on the body 102.
  • the shielding portion 103 is provided at least between adjacent vapor deposition opening regions 102 for vapor-depositing organic light-emitting layers of different colors.
  • the plurality of shielding portions 103 and the plurality of vapor deposition opening regions 102 are at least one side Alternately set up.
  • FIG. 3 is a schematic diagram of a method for forming an organic light-emitting layer of an organic light-emitting diode display substrate by using the vapor deposition mask of FIG. 2.
  • the organic light emitting diode display substrate 200 includes a base substrate 201, an anode 202, and a pixel defining layer 203.
  • the OLED display substrate 200 of the embodiment of the present disclosure may further include other film layers (for example, a thin film transistor functional layer, etc.), and since it has little relationship with the solution in the embodiment of the present disclosure, it will not be described herein.
  • a masking portion 103 is disposed on the vapor deposition mask 100.
  • the shielding portion 103 blocks the vapor deposition material of the adjacent organic light-emitting layers of different colors.
  • the color absorbing layer is prevented from being mixed, so that the shielding portion is not disposed on the OLED display substrate 200, the use amount of the organic material is reduced, the process flow is reduced, the process time is shortened, and the OLED display substrate 200 can also be lowered.
  • the thickness of the pixel defining layer 203 and the line width dimension further reduce the amount of use of the organic material and reduce the manufacturing cost. At the same time, the resolution and aperture ratio of the organic light emitting diode display substrate can also be improved.
  • the shielding portion 103 has a thickness of 2.5 um - 3 um and a line width (CD) of 8 um - 12 um.
  • the shape of the shielding portion 103 is hemispherical or hemispherical.
  • the shape of the shielding portion is not limited thereto, for example, It is a cylinder or a cuboid.
  • FIG. 4 is a bottom view of an evaporation mask according to an embodiment of the present disclosure.
  • the evaporation mask includes a plurality of shielding portions 103, and the plurality of shielding portions 103 are uniformly arranged in a matrix manner, and in the row direction (as indicated by an arrow A1 in FIG. 4,
  • the shielding portion 103 is interleaved with the vapor deposition opening region 102 in a first direction.
  • the shape and size of the shielding portion 103 are consistent with the shape and size of the vapor-deposited opening region 102.
  • the shape and size of the shielding portion 103 and the vapor-deposited opening region 102 are The shape and size may also be inconsistent as long as the length of the shielding portion 103 is greater than or equal to the length of the vapor deposition opening region 102 as long as it is ensured in the column direction (the direction indicated by the arrow A2 in FIG. 4, which may also be referred to as the second direction). Just fine.
  • the organic light emitting layers in the same column are of the same color, and are located in the same organic light emitting layer, and the colors of the adjacent organic light emitting layers are different. Therefore, on the vapor deposition mask, the shielding portion 103 may be disposed only between the adjacent vapor deposition opening regions 102 for vaporizing the organic light emitting layers of different colors, and is not disposed in other regions, and the vapor deposition is performed. In the structure of the mask, the amount of material of the shielding portion 103 can be effectively reduced.
  • the body 101 may be a mesh structure having a plurality of meshes, and the vapor-deposited opening region 102 is a mesh in the mesh structure.
  • the body 101 includes a frame portion 1012, a plurality of first extensions 1014, and a plurality of second extensions 1016.
  • the first extension portion 1014 and the second extension portion 1016 are both strip-shaped and disposed inside the frame portion 1012.
  • the plurality of first extensions 1014 extend in the row direction and are spaced apart from each other in the column direction.
  • the plurality of second extensions 1016 extend in the column direction and are spaced apart from each other in the row direction.
  • the first extension portion 1014 and the second extension portion 1016 intersect each other to form a plurality of meshes 1018, that is, vapor-deposited opening regions 102.
  • the shielding portion 103 is disposed only on the second extension portion 1016 and is not disposed on the first extension portion 1014 and the interface portion 1019 between the second extension portion 1016 and the first extension portion 1014. .
  • the shielding portion 103 and the vapor deposition opening region 102 are alternately arranged; in the column direction, the shielding portion 103 is interlaced with the first extending portion 1014, thereby preventing the organic light emitting layer from being mixed and effectively reducing the blocking.
  • the amount of material used in section 103 is the amount of material used in section 103.
  • the shielding portion 103 can also be other arrangement manners, please refer to FIGS. 5 and 6.
  • FIG. 5 is a bottom view of an evaporation mask according to an embodiment of the present disclosure.
  • the vapor deposition mask of FIG. 5 is similar to the vapor deposition mask shown in FIG. 4, and the difference between the two is that the shielding portion 103 in FIG. 5 covers all of the second extensions 1016.
  • each of the shielding portions 103 has a strip shape and extends in the column direction, and the shielding portions 103 are spaced apart in the row direction.
  • Figure 6 is a bottom plan view of an evaporation mask according to an embodiment of the present disclosure.
  • the vapor deposition mask of FIG. 6 is similar to the vapor deposition mask shown in FIG. 4, and the difference between the two is that the shielding portion 103 in FIG. 6 covers all of the second extensions 1016 and all of the first extensions. Part 1014.
  • the plurality of shielding portions 103 are formed in a mesh shape. Such an arrangement is advantageous in further avoiding color mixing of the organic light-emitting layer.
  • the shielding portion is formed by using a photoresist.
  • the process of forming a photoresist is simple, for example, a photolithography process, a printing process, a transfer process, etc., and When the stopper is used for too long and needs to be replaced, the photoresist is also easily peeled off.
  • the use of other types of materials to form the shield such as metal or the like, is not excluded.
  • the vapor deposition mask in the embodiment of the present disclosure is an FMM (Fine Metal Mask) mask.
  • An embodiment of the present disclosure further provides an evaporation method of an organic light emitting diode display substrate, wherein the organic light emitting layer of the organic light emitting diode display substrate is formed by vapor deposition mask evaporation in any of the above embodiments.
  • the shielding portion is provided on the vapor deposition mask, when the organic light-emitting layer is vapor-deposited, the shielding portion blocks the vapor deposition material of the adjacent organic light-emitting layers of different colors, thereby preventing the organic light-emitting layer from being mixed, thereby
  • the organic light emitting diode formed in the disclosed embodiment may not be provided with a spacer for shielding, which reduces the amount of use of the organic material (the amount of material used for the spacer on the organic light emitting diode display substrate is reduced by 100). %), reducing the process flow, shortening the process time, and also reducing the thickness and line width of the pixel defining layer on the OLED display substrate, further reducing the use of organic materials and reducing the manufacturing cost.
  • the method before the step of forming the organic light emitting layer of the organic light emitting diode display substrate, the method further includes: forming a pixel defining layer of the organic light emitting diode display substrate, wherein the thickness of the pixel defining layer is 0.75 um - 1 um
  • the line width is 8um-12um.
  • the pixel definition layer in the related art has a line width dimension of about 18 um to 24 um and a thickness of 1.5 um to 2 um.
  • the pixel definition layer in the embodiment of the present disclosure reduces the material usage by 30% to 50% compared with the pixel definition layer in the related art. Even 50% or more.
  • An embodiment of the present disclosure further provides an organic light emitting diode display substrate including an organic light emitting layer formed by the above evaporation method.
  • the organic light emitting diode display substrate of the embodiment of the present disclosure does not include: a spacer for avoiding color mixing of the organic light emitting layer during the evaporation process, thereby reducing the amount of material used for fabricating the spacer, The process flow for fabricating the spacer on the OLED display substrate is reduced, and the process time is shortened.
  • the organic light emitting diode display substrate in the embodiment of the present disclosure further includes a pixel defining layer.
  • the pixel defining layer has a thickness of 0.75 um-1 um and a line width dimension of 8 um-12 um.
  • the organic light emitting diode display substrate of the embodiment of the present disclosure may be a flexible display substrate, or It is a rigid display substrate.
  • An embodiment of the present disclosure further provides an organic light emitting diode display device including the above organic light emitting diode display substrate.
  • the embodiment of the present disclosure further provides a method for fabricating an evaporation mask for forming the vapor deposition mask in the above embodiment, the method comprising:
  • Step S11 providing an evaporation mask stencil, the evaporation reticle plate comprising a body and an evaporation opening region opened on the body;
  • Step S12 forming a photoresist layer on the vapor deposition mask plate
  • Step S13 performing a photolithography process (including exposure, development, etching, peeling, etc.) on the photoresist layer to form a pattern of a shielding portion, the shielding portion being disposed on the body and disposed at least adjacent to Between the vapor-deposited opening regions for vapor-depositing organic light-emitting layers of different colors.
  • a photolithography process including exposure, development, etching, peeling, etc.
  • the shielding portion is formed by using a photoresist, and the process is simple.
  • the photoresist is relatively easily peeled off.
  • the occlusion portion is formed by a photolithography process, and of course, it may be formed by a printing process, a transfer process, or the like.
  • the shielding portion is formed by using a photoresist.
  • a shielding portion such as metal or the like by using other types of materials.
  • the thickness of the shielding portion is 2.5 um - 3 um
  • the error is ⁇ 0.2 um
  • the line width is 8 um - 12 um.
  • the error is ⁇ 0.8um.
  • the shielding portion on the evaporation mask can be periodically replaced.
  • the shielding portion on the evaporation mask can be replaced in the following manner: 1) According to the product in the factory The model uses a photolithography process to form the desired photoresist pattern on the vapor deposition mask plate, and periodically removes the new one to ensure the evaporation effect. This method requires more exposure and development equipment. 2) When the vapor deposition mask is produced, the corresponding manufacturer is required to make this part of the photoresist pattern and return to the factory for replacement. This method is slightly longer than the first one, but it can reduce the equipment input cost.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种蒸镀掩膜版（100）及制作方法及蒸镀方法，该蒸镀掩膜版（100）包括本体（101）、开设于本体（101）上的蒸镀开口区域（102）以及设置于本体（101）上的遮挡部（103）。遮挡部（103）设置于相邻的蒸镀开口区域（102）之间。

Description

蒸镀掩膜版及制作方法及蒸镀方法
相关申请的交叉引用
本申请主张在2017年1月24日在中国提交的中国专利申请号No.201710055092.7的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种蒸镀掩膜版及制作方法、及蒸镀方法。
背景技术
有机发光二极管(OLED)显示基板的制作过程中，通常采用蒸镀(EV，Evaporate)工艺形成有机发光层。然而，在进行蒸镀过程中，相邻的不同颜色的有机发光层易发生混色风险。
发明内容
有鉴于此，本公开实施例提供一种蒸镀掩膜版及制作方法及蒸镀方法，以避免相邻的不同颜色的有机发光层发生混色风险。
为解决上述技术问题，本公开实施例提供一种蒸镀掩膜版，包括本体、开设于所述本体上的蒸镀开口区域以及设置于所述本体上的多个遮挡部。所述遮挡部设置于相邻的蒸镀开口区域之间。
可选地，所述遮挡部仅设置于相邻的用于蒸镀不同颜色的有机发光层的蒸镀开口区域之间。
可选地，所述遮挡部的厚度为2.5um-3um，线宽尺寸为8um-12um。
可选地，所述遮挡部的形状为半球状、类半球状、圆柱体或长方体。
可选地，所述遮挡部采用光刻胶形成。
可选地，所述遮挡部和所述蒸镀开口区域在至少一个方向上交替设置。
可选地，所述本体为具备多个网格的网格结构，所述蒸镀开口区域为网格结构中的网格。
可选地，所述本体包括框架部、多个第一延伸部和多个第二延伸部；所述第一延伸部和所述第二延伸部均呈条状并设置在所述框架部内部；所述多个第一延伸部沿着行方向延伸且在列方向上相互间隔设置；所述多个第二延伸部沿着所述列方向延伸且在所述行方向上相互间隔设置；所述多个第一延伸部和所述多个第二延伸部相互交叉形成所述多个网格。
可选地，所述遮挡部呈矩阵方式均匀排列在所述多个第二延伸部上；在所述行方向上，所述遮挡部与所述蒸镀开口区域交错设置；在所述列方向上，所述遮挡部与所述多个第一延伸部交替设置。
可选地，所述多个遮挡部覆盖全部所述第二延伸部。
可选地，每个遮挡部呈条状并沿着所述列方向延伸，且所述多个遮挡部在所述行方向间隔设置。
可选地，所述多个遮挡部覆盖全部第二延伸部和全部第一延伸部。
可选地，所述多个遮挡部形成网格状。
本公开还提供一种采用上述蒸镀掩膜版蒸镀形成有机发光二极管显示基板的有机发光层的蒸镀方法，包括：
以所述蒸镀掩膜版上的遮挡部与衬底基板上的像素定义层直接相对的方式将所述蒸镀掩膜版和衬底基板相对设置；
以所述蒸镀掩膜版为掩膜蒸镀有机发光材料。
可选地，在以所述蒸镀掩膜版上的遮挡部与衬底基板上的像素定义层直接相对的方式将所述蒸镀掩膜版和衬底基板相对设置之前，所述蒸镀方法还包括：
在所述衬底基板上形成厚度为0.75um-1um且线宽尺寸为8um-12um的像素定义层。
本公开还提供一种有机发光二极管显示基板，包括采用上述蒸镀方法形成的有机发光层。
可选地，所述有机发光二极管显示基板包括：像素定义层，所述像素定义层的厚度为0.75um-1um，线宽尺寸为8um-12um。
本公开还提供一种有机发光二极管显示装置，包括上述有机发光二极管显示基板。
本公开还提供一种蒸镀掩膜版的制作方法，用于形成上述蒸镀掩膜版，所述方法包括：
提供一蒸镀掩膜版底版，所述蒸镀掩膜版底版包括本体和开设于所述本体上的蒸镀开口区域；
在所述蒸镀掩膜版底版上形成光刻胶层，并对所述光刻胶层进行光刻工艺，形成位于相邻蒸镀开口区域之间的遮挡部。
附图说明
图1为相关技术中的有机发光二极管显示基板的有机发光层的蒸镀方法示意图；
图2为本公开一实施例的蒸镀掩膜版的剖面示意图；
图3是采用图2中的蒸镀掩膜版形成有机发光二极管显示基板的有机发光层的方法示意图；
图4为本公开一实施例的蒸镀掩膜版的仰视图；
图5为本公开另一实施例的蒸镀掩膜版的仰视图；
图6为本公开又一实施例的蒸镀掩膜版的仰视图；
图7为本公开一实施例的蒸镀掩膜版的剖面示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”或者“一”等类似词语也不表示数量限制，而是表示存在至少一个。“连接”或者“相连” 等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也相应地改变。
图1为相关技术中的有机发光二极管显示基板的有机发光层的蒸镀方法示意图。请参考图1，在蒸镀时，需要采用FMM(Fine Metal Mask高精度金属)掩膜版10作为掩膜，以在有机发光二极管显示基板20上形成不同颜色的有机发光层。FMM掩膜版10包括本体11以及开设于本体11上的间隔设置的蒸镀开口区域12。有机发光二极管显示基板20包括衬底基板21、阳极22和像素定义层23。为了避免在进行蒸镀工艺时，相邻的不同颜色的有机发光层发生混色风险，通常需要增大像素定义层(PDL)23的厚度和线宽尺寸(CD)，同时在像素定义层23上方增加隔垫物(PS)24，以进一步增加厚度，从而进行阳极22的隔离。但是，这必然在一定程度上会牺牲有机发光二极管产品的分辨率和开口率，很难对应高PPI(分辨率)的产品，同时增加了制作隔垫物的工艺流程，会浪费较为昂贵的有机材料使用量(PDL+PS)，导致成本增加。
本公开实施例提供一种蒸镀掩膜版及制作方法及蒸镀方法，用于解决在蒸镀有机发光二极管显示基板的有机发光层时，需要设置厚度较大的像素定义层和隔垫物，以避免相邻的不同颜色的有机发光层发生混色风险，从而导致有机发光二极管显示基板分辨率和开口率低，成本高的问题。
下面将结合附图和实施例，对本公开的具体实施方式作进一步详细描述。以下实施例用于说明本公开，但不用来限制本公开的范围。
请参考图2，图2为本公开一实施例的蒸镀掩膜版的剖面示意图，该蒸镀掩膜版100包括本体101、开设于所述本体101上的蒸镀开口区域102以及设置于所述本体102上的遮挡部103。遮挡部103至少设置于相邻的用于蒸镀不同颜色的有机发光层的蒸镀开口区域102之间。通过在相邻的用于蒸镀不同颜色的有机发光层的蒸镀开口区域102之间设置遮挡部103，可以解决或降低在蒸镀有机发光二极管显示基板的有机发光层时相邻的不同颜色的有机发光层发生混色的风险。
在一实施例中，多个遮挡部103和多个蒸镀开口区域102在至少一个方 向上交替设置。
请参考图3，图3是采用图2中的蒸镀掩膜版形成有机发光二极管显示基板的有机发光层的方法示意图。如图3所示，有机发光二极管显示基板200包括衬底基板201、阳极202和像素定义层203。当然，本公开实施例的有机发光二极管显示基板200还可以包括其他膜层(例如薄膜晶体管功能层等)，由于与本公开实施例中的方案的关系不大，在此不进行描述。
从图3中可以看出，在蒸镀掩膜版100上设置了遮挡部103，在蒸镀有机发光层时，遮挡部103对相邻的不同颜色的有机发光层的蒸镀材料进行遮挡，避免有机发光层发生混色，从而可以不在有机发光二极管显示基板200上设置遮挡部，降低了有机材料的使用量，减少了工艺流程，缩短了工艺时间，并且还可以降低有机发光二极管显示基板200上的像素定义层203的厚度和线宽尺寸，进一步降低有机材料的使用量，降低了制作成本。同时，还可以提高有机发光二极管显示基板的分辨率和开口率。
可选地，请参考图2，所述遮挡部103的厚度为2.5um-3um，线宽尺寸(CD)为8um-12um。
图2和图3所示的实施例中，遮挡部103的形状为半球状，或类半球状，当然，在本公开的其他一些实施例中，遮挡部的形状也不限于此，例如还可以为圆柱体或长方体等。
请参考图4，图4为本公开一实施例的蒸镀掩膜版的仰视图。在图4所示的实施例中，蒸镀掩膜版包括多个遮挡部103，多个遮挡部103呈矩阵方式均匀排列，在行方向(如图4中箭头A1所示的方向，也可称为第一方向)上，遮挡部103与蒸镀开口区域102交错设置。本公开实施例中，遮挡部103的形状和尺寸与蒸镀开口区域102的形状和尺寸一致，当然，在本公开的其他一些实施例中，遮挡部103的形状和尺寸与蒸镀开口区域102的形状和尺寸也可以不一致，只要保证在列方向(如图4中箭头A2所示的方向，也可称为第二方向)上，遮挡部103的长度大于或等于蒸镀开口区域102的长度即可。
本实施例中，有机发光二极管显示基板上，位于同一列的有机发光层为同一种颜色，位于同一行的有机发光层中，相邻的有机发光层的颜色均不同， 因而，在蒸镀掩膜版上，遮挡部103可以仅设置于相邻的用于蒸镀不同颜色的有机发光层的蒸镀开口区域102之间，在其他区域并不设置，该种蒸镀掩膜版的结构中，可以有效减少遮挡部103的材料用量。
在图4所示的实施例中，本体101可以为具备多个网格的网格结构，蒸镀开口区域102为网格结构中的网格。具体地，本体101包括框架部1012、多个第一延伸部1014和多个第二延伸部1016。第一延伸部1014和第二延伸部1016均呈条状，并设置在框架部1012内部。多个第一延伸部1014沿着行方向延伸且在列方向上相互间隔设置。多个第二延伸部1016沿着列方向延伸且在行方向上相互间隔设置。第一延伸部1014和第二延伸部1016相互交叉形成多个网格1018，也即蒸镀开口区域102。
在图4所示的实施例中，遮挡部103仅设置在第二延伸部1016上而未设置在第一延伸部1014上以及第二延伸部1016和第一延伸部1014之间的交界部1019。这样，在行方向上，遮挡部103与蒸镀开口区域102交错设置；在列方向上，遮挡部103与第一延伸部1014交错设置，从而既可以避免有机发光层发生混色，又可以有效减少遮挡部103的材料用量。
当然，遮挡部103也可以是其他设置方式，请参考图5和6。
图5为本公开一实施例的蒸镀掩膜版的仰视图。图5中蒸镀掩膜版与图4所示的蒸镀掩膜版相似，两者之间的不同之处在于，图5中的遮挡部103覆盖全部第二延伸部1016。换言之，每个遮挡部103呈条状并沿着列方向延伸，且遮挡部103在行方向间隔设置。
图6为本公开一实施例的蒸镀掩膜版的仰视图。图6中蒸镀掩膜版与图4所示的蒸镀掩膜版相似，两者之间的不同之处在于，图6中的遮挡部103覆盖全部第二延伸部1016和全部第一延伸部1014。换言之，多个遮挡部103形成网格状。这样布置有利于进一步避免有机发光层发生混色。
本公开实施例中，遮挡部103与蒸镀开口区域102之间存在一定的间隔，如图2所示，当然，在本公开的其他一些实施例中，遮挡部和蒸镀开口区域102之间也可以无间隔，如图7所示。
上述实施例中，可选地，所述遮挡部采用光刻胶形成。采用光刻胶形成的工艺简单，例如可以采用光刻工艺，打印工艺或转印工艺等，另外，当遮 挡部使用太久需要更换时，光刻胶也比较容易剥离。当然，本公开的其他一些实施例中，也不排除采用其他类型的材料形成遮挡部，例如金属等。
本公开实施例中的蒸镀掩膜版为FMM(Fine Metal Mask高精度金属)掩膜版。
本公开实施例还提供一种有机发光二极管显示基板的蒸镀方法，采用上述任一实施例中的蒸镀掩膜版蒸镀形成所述有机发光二极管显示基板的有机发光层。
由于在蒸镀掩膜版上设置了遮挡部，在蒸镀有机发光层时，遮挡部对相邻的不同颜色的有机发光层的蒸镀材料进行遮挡，避免有机发光层发生混色，从而，本公开实施例中形成的有机发光二极管显示基板上可以不设置用于遮挡的隔垫物，降低了有机材料的使用量(有机发光二极管显示基板上的用于遮挡的隔垫物的材料用量减少100％)，减少了工艺流程，缩短了工艺时间，并且还可以降低有机发光二极管显示基板上的像素定义层的厚度和线宽尺寸，进一步降低有机材料的使用量，降低了制作成本。
本公开实施例中，在形成所述有机发光二极管显示基板的有机发光层的步骤之前还包括：形成所述有机发光二极管显示基板的像素定义层，所述像素定义层的厚度为0.75um-1um，线宽尺寸为8um-12um。相关技术中的像素定义层线宽尺寸约为18um-24um，厚度1.5um-2um，本公开实施例中的像素定义层与相关技术中的像素定义层相比，材料用量减少30％-50％，甚至50％以上。
本公开实施例还提供一种有机发光二极管显示基板，包括采用上述蒸镀方法形成的有机发光层。
可选地，本公开实施例的有机发光二极管显示基板不包括：用于在蒸镀工艺时避免有机发光层产生混色的隔垫物，从而降低了用于制作隔垫物的材料的使用量，并减少了在有机发光二极管显示基板上制作隔垫物的工艺流程，缩短了工艺时间。
本公开实施例中的有机发光二极管显示基板还包括像素定义层。可选地，所述像素定义层的厚度为0.75um-1um，线宽尺寸为8um-12um。
本公开实施例的有机发光二极管显示基板可以为柔性显示基板，也可以 为刚性显示基板。
本公开实施例还提供一种有机发光二极管显示装置，包括上述有机发光二极管显示基板。
本公开实施例还提供一种蒸镀掩膜版的制作方法，用于形成上述实施例中的蒸镀掩膜版，所述方法包括：
步骤S11：提供一蒸镀掩膜版底版，所述蒸镀掩膜版底版包括本体和开设于所述本体上的蒸镀开口区域；
步骤S12：在所述蒸镀掩膜版底版上形成光刻胶层；
步骤S13：对所述光刻胶层进行光刻工艺(包括曝光、显影、刻蚀和剥离等)，形成遮挡部的图形，所述遮挡部设置于所述本体上，且至少设置于相邻的用于蒸镀不同颜色的有机发光层的蒸镀开口区域之间。
本公开实施例中，遮挡部采用光刻胶形成，工艺简单，另外，当遮挡部使用太久需要更换时，光刻胶也比较容易剥离。
本公开实施例中，是采用光刻工艺形成遮挡部，当然，也可以采用打印工艺、转印等工艺形成。
本公开实施例中，遮挡部采用光刻胶形成，当然，本公开的其他一些实施例中，也不排除采用其他类型的材料形成遮挡部，例如金属等。
本公开实施例中，为了保证蒸镀工艺的效果，需要保证形成的遮挡部的尺寸的精度，例如，遮挡部的厚度为2.5um-3um，误差±0.2um，线宽尺寸为8um-12um，误差±0.8um。
进一步地，为了保证蒸镀的效果，蒸镀掩膜版上的遮挡部可以定期更换，本公开实施例中，可以采用以下方式更换蒸镀掩膜版上的遮挡部，1)工厂内根据产品型号采用光刻工艺，在蒸镀掩膜版底版上形成所需要的光刻胶图形，定期去除换新，保证蒸镀的效果，这种方法需要多购置曝光和显影设备。2)蒸镀掩膜板制作时，要求对应厂商制作此部分光刻胶图形，定期返厂进行更换，这种方法时效性较第一种略长，但是能减少设备投入成本。
以上所述是本公开的可选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本公开的保护范围。

Claims (16)

  1. 一种蒸镀掩膜版，包括：
    本体；
    开设于所述本体上的多个蒸镀开口区域；及
    设置于所述本体上的多个遮挡部；
    其中，所述遮挡部设置于相邻的蒸镀开口区域之间。
  2. 根据权利要求1所述的蒸镀掩膜版，其中，所述遮挡部仅设置于相邻的用于蒸镀不同颜色的有机发光层的蒸镀开口区域之间。
  3. 根据权利要求1所述的蒸镀掩膜版，其中，所述遮挡部的厚度为2.5um-3um，线宽尺寸为8um-12um。
  4. 根据权利要求3所述的蒸镀掩膜版，其中，所述遮挡部的形状为半球状、类半球状、圆柱体或长方体。
  5. 根据权利要求1所述的蒸镀掩膜版，其中，所述遮挡部采用光刻胶形成。
  6. 根据权利要求1所述的蒸镀掩膜版，其中，所述遮挡部和所述蒸镀开口区域在至少一个方向上交替设置。
  7. 根据权利要求1所述的蒸镀掩膜版，其中，所述本体为具备多个网格的网格结构，所述蒸镀开口区域为网格结构中的网格。
  8. 根据权利要求7所述的蒸镀掩膜版，其中，所述本体包括框架部、多个第一延伸部和多个第二延伸部；所述第一延伸部和所述第二延伸部均呈条状并设置在所述框架部内部；所述多个第一延伸部沿着行方向延伸且在列方向上相互间隔设置；所述多个第二延伸部沿着所述列方向延伸且在所述行方向上相互间隔设置；所述多个第一延伸部和所述多个第二延伸部相互交叉形成所述多个网格。
  9. 根据权利要求8所述的蒸镀掩膜版，其中，所述遮挡部呈矩阵方式均匀排列在所述多个第二延伸部上；在所述行方向上，所述遮挡部与所述蒸镀开口区域交错设置；在所述列方向上，所述遮挡部与所述多个第一延伸部交替设置。
  10. 根据权利要求8所述的蒸镀掩膜版，其中，所述多个遮挡部覆盖全部所述第二延伸部。
  11. 根据权利要求10所述的蒸镀掩膜版，其中，每个遮挡部呈条状并沿着所述列方向延伸，且所述多个遮挡部在所述行方向间隔设置。
  12. 根据权利要求8所述的蒸镀掩膜版，其中，所述多个遮挡部覆盖全部第二延伸部和全部第一延伸部。
  13. 根据权利要求12所述的蒸镀掩膜版，其中，所述多个遮挡部形成网格状。
  14. 一种采用如权利要求1-13任一项所述的蒸镀掩膜版蒸镀形成有机发光二极管显示基板的有机发光层的蒸镀方法，包括：
    以所述蒸镀掩膜版上的遮挡部与衬底基板上的像素定义层直接相对的方式将所述蒸镀掩膜版和衬底基板相对设置；
    以所述蒸镀掩膜版为掩膜蒸镀有机发光材料。
  15. 根据权利要求14所述的有机发光二极管显示基板的蒸镀方法，其中，在以所述蒸镀掩膜版上的遮挡部与衬底基板上的像素定义层直接相对的方式将所述蒸镀掩膜版和衬底基板相对设置之前，所述蒸镀方法还包括：
    在所述衬底基板上形成厚度为0.75um-1um且线宽尺寸为8um-12um的像素定义层。
  16. 一种用于形成如权利要求1-13任一项所述的蒸镀掩膜版的制作方法，包括：
    提供一蒸镀掩膜版底版，所述蒸镀掩膜版底版包括本体和开设于所述本体上的蒸镀开口区域；
    在所述蒸镀掩膜版底版上形成光刻胶层，并对所述光刻胶层进行光刻工艺形成位于相邻蒸镀开口区域之间的遮挡部。
PCT/CN2017/095740 2017-01-24 2017-08-03 蒸镀掩膜版及制作方法及蒸镀方法 Ceased WO2018137328A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/751,467 US11155913B2 (en) 2017-01-24 2017-08-03 Evaporation mask plate, manufacturing method thereof and evaporation method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710055092.7 2017-01-24
CN201710055092.7A CN106816554A (zh) 2017-01-24 2017-01-24 蒸镀掩膜版及制作方法、oled显示基板及蒸镀方法

Publications (1)

Publication Number Publication Date
WO2018137328A1 true WO2018137328A1 (zh) 2018-08-02

Family

ID=59111659

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/095740 Ceased WO2018137328A1 (zh) 2017-01-24 2017-08-03 蒸镀掩膜版及制作方法及蒸镀方法

Country Status (3)

Country Link
US (1) US11155913B2 (zh)
CN (1) CN106816554A (zh)
WO (1) WO2018137328A1 (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106816554A (zh) * 2017-01-24 2017-06-09 京东方科技集团股份有限公司 蒸镀掩膜版及制作方法、oled显示基板及蒸镀方法
CN107275522A (zh) * 2017-05-25 2017-10-20 上海天马有机发光显示技术有限公司 一种掩膜板及阵列基板的制作方法
CN107164726B (zh) * 2017-07-13 2019-07-09 京东方科技集团股份有限公司 一种oled蒸镀用掩膜板及制备方法
CN107385391A (zh) * 2017-07-14 2017-11-24 京东方科技集团股份有限公司 掩膜板、oled显示基板及其制作方法、显示装置
CN107385392A (zh) * 2017-08-17 2017-11-24 京东方科技集团股份有限公司 一种掩膜版、oled显示基板、显示装置及制作方法
CN107699852A (zh) * 2017-09-12 2018-02-16 深圳市华星光电半导体显示技术有限公司 掩膜板及其制造方法、蒸镀方法
CN108441816B (zh) * 2018-04-12 2020-11-20 京东方科技集团股份有限公司 一种掩模版及蒸镀装置
CN108559945A (zh) * 2018-04-25 2018-09-21 京东方科技集团股份有限公司 一种蒸镀用掩膜板
CN112640149A (zh) * 2018-09-20 2021-04-09 深圳市柔宇科技股份有限公司 有机发光二极管背板及其制作方法
CN109881147A (zh) * 2019-02-01 2019-06-14 云谷（固安）科技有限公司 蒸镀用掩膜板、制备方法、oled显示基板及显示装置
CN110767713A (zh) * 2019-03-08 2020-02-07 云谷（固安）科技有限公司 显示装置及其oled基板、oled透光基板
CN110212091B (zh) * 2019-06-13 2023-09-15 京东方科技集团股份有限公司 蒸镀掩膜板、oled显示基板及其制作方法、显示装置
CN110137238A (zh) 2019-06-21 2019-08-16 京东方科技集团股份有限公司 Oled显示基板及其制作方法、显示装置
CN110453173B (zh) * 2019-07-29 2021-09-21 京东方科技集团股份有限公司 掩膜板及其制作方法、oled显示基板的制作方法
CN110983248A (zh) * 2019-12-18 2020-04-10 京东方科技集团股份有限公司 掩膜板、显示面板及其制造方法、显示装置
CN111088474B (zh) * 2020-01-03 2022-07-05 京东方科技集团股份有限公司 一种掩膜板及其制作方法
CN111676447B (zh) * 2020-07-14 2026-01-23 京东方科技集团股份有限公司 蒸镀掩膜版及显示面板
CN111883571B (zh) * 2020-08-06 2023-06-02 京东方科技集团股份有限公司 显示背板、显示装置、掩膜版、蒸镀方法和显示方法
CN112080721A (zh) * 2020-09-16 2020-12-15 云谷（固安）科技有限公司 掩膜板及其制备方法、显示基板及显示装置
CN112899614A (zh) * 2021-01-25 2021-06-04 维信诺科技股份有限公司 掩膜板及蒸镀装置
US20240365652A1 (en) * 2022-05-31 2024-10-31 Chengdu Boe Optoelectronics Technology Co., Ltd. To-be-evaporated substrates, display substrates and manufacturing methods thereof
CN115224225B (zh) * 2022-06-23 2025-11-25 合肥维信诺科技有限公司 掩膜板和显示面板
CN116162893B (zh) * 2023-02-17 2024-10-18 京东方科技集团股份有限公司 一种掩模板及蒸镀装置
CN121568516A (zh) * 2026-01-21 2026-02-24 惠科股份有限公司 显示面板的制作方法、掩膜版和显示面板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1443026A (zh) * 2002-03-05 2003-09-17 三洋电机株式会社 有机电致发光屏、有机电致发光器件、和掩膜的制造方法
CN105633301A (zh) * 2014-11-17 2016-06-01 上海和辉光电有限公司 一种降低oled混色缺陷的方法及oled显示面板
CN105714249A (zh) * 2016-04-19 2016-06-29 上海和辉光电有限公司 掩膜板、蒸镀装置及蒸镀方法
CN106367716A (zh) * 2015-07-24 2017-02-01 上海和辉光电有限公司 掩模板及显示面板的制作方法
CN106816554A (zh) * 2017-01-24 2017-06-09 京东方科技集团股份有限公司 蒸镀掩膜版及制作方法、oled显示基板及蒸镀方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4170179B2 (ja) * 2003-01-09 2008-10-22 株式会社 日立ディスプレイズ 有機ｅｌパネルの製造方法および有機ｅｌパネル
KR100889764B1 (ko) 2003-10-04 2009-03-20 삼성모바일디스플레이주식회사 유기 전자 발광 소자의 박막 증착용 마스크 프레임 조립체및, 그것을 이용한 박막 증착 방법
TW200727448A (en) * 2006-01-09 2007-07-16 Au Optronics Corp Shadow masks for colorizing process of display devices
JP2013021165A (ja) * 2011-07-12 2013-01-31 Sony Corp 蒸着用マスク、蒸着用マスクの製造方法、電子素子および電子素子の製造方法
CN103713466B (zh) * 2013-12-30 2016-05-11 京东方科技集团股份有限公司 掩膜板及其制作方法
CN203999787U (zh) * 2014-08-12 2014-12-10 北京维信诺科技有限公司 一种蒸镀掩膜版
CN104867963A (zh) * 2015-05-08 2015-08-26 京东方科技集团股份有限公司 有机发光显示基板及其制作方法、有机发光显示装置
CN105154823B (zh) * 2015-09-07 2017-12-08 信利（惠州）智能显示有限公司 蒸镀掩膜板及其制作方法
JP2017150017A (ja) * 2016-02-23 2017-08-31 株式会社ジャパンディスプレイ 蒸着マスクの製造方法及び有機ｅｌディスプレイの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1443026A (zh) * 2002-03-05 2003-09-17 三洋电机株式会社 有机电致发光屏、有机电致发光器件、和掩膜的制造方法
CN105633301A (zh) * 2014-11-17 2016-06-01 上海和辉光电有限公司 一种降低oled混色缺陷的方法及oled显示面板
CN106367716A (zh) * 2015-07-24 2017-02-01 上海和辉光电有限公司 掩模板及显示面板的制作方法
CN105714249A (zh) * 2016-04-19 2016-06-29 上海和辉光电有限公司 掩膜板、蒸镀装置及蒸镀方法
CN106816554A (zh) * 2017-01-24 2017-06-09 京东方科技集团股份有限公司 蒸镀掩膜版及制作方法、oled显示基板及蒸镀方法

Also Published As

Publication number Publication date
CN106816554A (zh) 2017-06-09
US11155913B2 (en) 2021-10-26
US20200239997A1 (en) 2020-07-30

Similar Documents

Publication Publication Date Title
WO2018137328A1 (zh) 蒸镀掩膜版及制作方法及蒸镀方法
TWI697886B (zh) 顯示結構和顯示裝置
JP5816519B2 (ja) マスクフレーム組立体、マスクフレーム組立体の製造方法、および有機発光表示装置の製造方法
US9874783B2 (en) Liquid crystal display substrate and preparation method thereof
CN109346505B (zh) 一种有机发光显示面板、其制备方法及显示装置
EP3168891A1 (en) Oled display device and manufacturing method thereof, display device and evaporation-deposition mask plate
US20240389402A1 (en) Display Substrate With Central Region With Lower Pixel Density and Preparation Method Thereof, and Display Apparatus
US10305049B2 (en) OLED substrate and manufacture method thereof
US10991884B2 (en) Mask plate, OLED display substrate, display device and manufacturing method thereof
CN108666420B (zh) 掩模板及其制作方法
CN110783498A (zh) 一种掩膜板组件及其制备方法、电致发光显示面板
US11374064B2 (en) Display panel and manufacturing method thereof, and display device
KR20160122362A (ko) 박막 증착용 마스크 어셈블리
CN110137238A (zh) Oled显示基板及其制作方法、显示装置
CN111108229A (zh) 蒸镀掩模以及蒸镀掩模的制造方法
US20190062894A1 (en) Evaporation mask plate and evaporation method
CN103943659B (zh) 显示基板及其制造方法和显示装置
WO2020140804A1 (zh) 显示基板、显示装置和显示基板的制造方法
US20210249622A1 (en) Display device and method for manufacturing the same
CN108269837B (zh) 一种电致发光显示面板、掩膜板及制作方法
KR101818256B1 (ko) 유기전계 발광 표시장치 및 그 제조방법
US20190319222A1 (en) Photomask and method for manufacturing display device
CN116121698A (zh) 掩膜组件及掩膜板
CN117769323B (zh) 一种显示面板及其制备方法
JP2011119226A (ja) 蒸着装置及びこれを利用した有機発光素子の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17894203

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17894203

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 07/02/2020)

122 Ep: pct application non-entry in european phase

Ref document number: 17894203

Country of ref document: EP

Kind code of ref document: A1