WO2018131628A1 - Trousse, procédé de production d'élément semi-conducteur, et procédé de nettoyage de substrat d'élément semi-conducteur - Google Patents
Trousse, procédé de production d'élément semi-conducteur, et procédé de nettoyage de substrat d'élément semi-conducteur Download PDFInfo
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- WO2018131628A1 WO2018131628A1 PCT/JP2018/000407 JP2018000407W WO2018131628A1 WO 2018131628 A1 WO2018131628 A1 WO 2018131628A1 JP 2018000407 W JP2018000407 W JP 2018000407W WO 2018131628 A1 WO2018131628 A1 WO 2018131628A1
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- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- LVEOKSIILWWVEO-UHFFFAOYSA-N tetradecyl 3-(3-oxo-3-tetradecoxypropyl)sulfanylpropanoate Chemical compound CCCCCCCCCCCCCCOC(=O)CCSCCC(=O)OCCCCCCCCCCCCCC LVEOKSIILWWVEO-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229960000790 thymol Drugs 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- HPOHAUWWDDPHRS-UHFFFAOYSA-N trans-piperitol Natural products CC(C)C1CCC(C)=CC1O HPOHAUWWDDPHRS-UHFFFAOYSA-N 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- 150000003627 tricarboxylic acid derivatives Chemical class 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
- BURBOJZOZGMMQF-UHFFFAOYSA-N xanthoxylol Natural products C1=C(O)C(OC)=CC=C1C1C(COC2C=3C=C4OCOC4=CC=3)C2CO1 BURBOJZOZGMMQF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- Such a sulfur atom residue is caused by the fact that the substrate to be temporarily bonded has a metal such as copper and the surface of the metal has many irregularities. It may cause disconnection.
- An object of the present invention is to solve such a problem, and is a kit including a temporary adhesive containing a silicon-containing compound and a cleaning agent for the temporary adhesive, and can appropriately wash various residues. It is an object to provide a kit, a method for manufacturing a semiconductor element, and a method for cleaning a substrate of a semiconductor element.
- Kit The kit of the present invention is a temporary adhesive containing at least one silicon-containing compound selected from the group consisting of a silicone compound and a precursor of the silicone compound, an organic acid, and an acid group contained in the organic acid.
- Cleaning composition A organic carboxylic acid compound, water and at least one organic acid containing sulfur atom or phosphorus atom (hereinafter sometimes referred to simply as “organic acid”) and an organic solvent, It contains the cleaning composition B containing at least 1 sort (s) of a water-soluble solvent.
- the temporary adhesive used in the present invention contains at least one silicon-containing compound selected from the group consisting of a silicone compound and a precursor of the silicone compound.
- the silicon-containing compound acts as a release agent, and the temporary adhesive can be easily removed from the substrate to be processed.
- Silicone oil is preferred as the silicon-containing compound. Silicone oil refers to a compound that is liquid at 25 ° C. Moreover, it is preferable that a silicon-containing compound does not contain reactive groups, such as a polymeric group.
- the silicon-containing compound is preferably a polyether-modified silicone.
- the polyether-modified silicone used in the present invention has a ratio represented by the formula (A) of 80% or more.
- Formula (A) ⁇ (MO + EO) / AO ⁇ ⁇ 100
- MO is the mol% of methylene oxide contained in the polyether structure in the polyether-modified silicone
- EO is the mol% of ethylene oxide contained in the polyether structure in the polyether-modified silicone
- AO refers to the mole percent of alkylene oxide contained in the polyether structure in the polyether-modified silicone.
- the ratio represented by the above formula (A) is preferably 90% or more, more preferably 95% or more, further preferably 98% or more, and further preferably 99% or more. 100% is even more preferable.
- R 21 , R 25 and R 26 are each independently a substituent
- R 22 is a divalent linking group
- R 23 is a hydrogen atom or a carbon number of 1 to 5 M2 and n2 are each independently a number from 0 to 20, and x2 is a number from 2 to 100.
- R 31 and R 36 are each independently a substituent
- R 32 and R 34 are each independently a divalent linking group
- R 33 and R 35 are hydrogen.
- m31, m32, n3 and p3 are each independently a number from 0 to 20, and x3 is a number from 2 to 100.
- R 21 , R 25 and R 26 are each independently a substituent, which has the same meaning as R 11 and R 16 in formula (101), and the preferred range is also the same.
- R 22 is a divalent linking group and has the same meaning as R 12 in formula (101), and the preferred range is also the same.
- R 23 is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms and has the same meaning as R 13 and R 15 in the formula (101), and the preferred range is also the same.
- R 41 , R 42 , R 43 , R 44 , R 45 and R 46 are each independently a substituent, and have the same meaning as R 11 and R 16 in the formula (101), The preferable range is also the same.
- R 47 is a divalent linking group, and has the same meaning as R 12 in the formula (101), and the preferred range is also the same.
- R 48 is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms and has the same meaning as R 13 and R 15 in the formula (101), and the preferred range is also the same.
- the polyoxyalkylene group content in the molecule is not particularly limited, but it is desirable that the polyoxyalkylene group content exceeds 1% by mass in the total molecular weight.
- the content of the polyoxyalkylene group is defined by “ ⁇ (formula weight of polyoxyalkylene group in one molecule) / molecular weight of one molecule ⁇ ⁇ 100”.
- the temporary adhesive used in the present invention preferably contains at least one resin.
- the resin include a block copolymer, a random copolymer, and a graft copolymer, and a block copolymer is preferable. If it is a block copolymer, since the flow of the temporary adhesive agent at the time of a heating process can be suppressed, adhesion can be maintained even at the time of a heating process, and the effect that peelability does not change even after a heating process can be expected.
- the weight average molecular weight of the elastomer is preferably 2,000 to 200,000, more preferably 10,000 to 200,000, and even more preferably 50,000 to 100,000.
- An elastomer having a weight average molecular weight within this range is excellent in solubility in a solvent. Therefore, after peeling the carrier substrate from the substrate to be processed, the solvent is used to derive from the elastomer remaining on the substrate to be processed or the carrier substrate. When removing the residue, the residue is easily dissolved in the solvent and removed. For this reason, there exists an advantage that a residue does not remain in a to-be-processed substrate, a carrier substrate, etc.
- the elastomer is not particularly limited, and an elastomer (polystyrene elastomer) containing a repeating unit derived from styrene, a polyester elastomer, a polyolefin elastomer, a polyurethane elastomer, a polyamide elastomer, a polyacryl elastomer, a silicone elastomer Elastomers, polyimide elastomers, etc. can be used.
- an elastomer polystyrene elastomer containing a repeating unit derived from styrene, a polyester elastomer, a polyolefin elastomer, a polyurethane elastomer, a polyamide elastomer, a polyacryl elastomer, a silicone elastomer Elastomers, polyimide elastomers, etc.
- the elastomer is preferably a hydrogenated product.
- a hydrogenated product of a polystyrene-based elastomer is preferable.
- thermal stability and storage stability are improved.
- the releasability and the removability of the temporary adhesive after peeling are improved.
- the hydrogenated product means a polymer having a structure in which an elastomer is hydrogenated.
- Polystyrene Elastomer >>>>>
- the said elastomer B is a comparatively hard material, it can be set as the temporary adhesive excellent in peelability by including the elastomer B.
- the content of the antioxidant is preferably included in a ratio of 0.001 to 20.0% by mass with respect to the total solid content of the temporary adhesive. More preferably, it is contained at a ratio of 005 to 10.0% by mass. Only one type of antioxidant may be used, or two or more types may be used. When there are two or more antioxidants, the total is preferably in the above range.
- the organic acid used in the present invention may be a low molecular compound (for example, a molecular weight of less than 1000, furthermore a molecular weight of 500 or less, and the lower limit is, for example, 98 or more), or a high molecular compound (for example, a molecular weight of 1000 or more Furthermore, it may be 2000 or more, and the upper limit may be 5000 or less, for example.
- the organic acid used in the present invention is preferably a low molecular compound.
- the organic acid used in the present invention preferably has an acid dissociation constant pKa of ⁇ 4 to 5, more preferably ⁇ 3 to 4.
- organic phosphoric acid examples include alkyl phosphoric acid such as methyl phosphate, dimethyl phosphate, ethyl phosphate, diethyl phosphate, butyl phosphate, dibutyl phosphate, butoxyethyl phosphate, 2-ethylhexyl phosphate, phenyl phosphoric acid, Aromatic phosphoric acid such as diphenyl phosphoric acid is exemplified.
- the organic phosphoric acid is preferably alkyl phosphoric acid and aromatic phosphoric acid, more preferably aromatic phosphoric acid, and still more preferably diaryl phosphoric acid.
- organic phosphonic acid examples include vinyl phosphonic acid, methylene diphosphonic acid, ethyl phosphonic acid, propyl phosphonic acid, 1,3-propylene diphosphonic acid, butyl phosphonic acid, 1,4-butylene phosphonic acid, pentyl phosphonic acid, 1 , 5-pentylenediphosphonic acid, hexylphosphonic acid, 1,6-dihexylenephosphonic acid, octylphosphonic acid, decylphosphonic acid, dodecylphosphonic acid and other alkylphosphonic acids, phenylphosphonic acid, phenylenediphosphonic acid, xylylenediphosphonic acid Aromatic acids such as acid, (4-hydroxyphenyl) phosphonic acid, (2-phenylethyl) phosphonic acid, o-xylene diphosphonic acid, benzhydrylphosphonic acid, cinnamyl phosphonic acid, (4-hydroxybenzyl) phosphonic acid Il
- Organic solvent contains an organic solvent.
- the organic solvent is preferably an organic solvent that dissolves the elastomer, and is at least one selected from an aromatic compound, a saturated alicyclic compound, a cyclic ketone, and a cyclic terpene. Is more preferable, and at least one selected from an aromatic compound, an alicyclic compound, and a cyclic terpene is more preferable, and at least one selected from an aromatic compound is even more preferable.
- the organic solvent as the aromatic compound preferably includes an aromatic hydrocarbon solvent having an alkyl group, more preferably a solvent having a benzene ring and 1 to 3 alkyl groups having 1 to 10 carbon atoms. preferable.
- the alkyl group constituting the aromatic hydrocarbon solvent having an alkyl group used in the present invention is a linear, branched or cyclic alkyl group, and a linear or branched alkyl group is preferred.
- the number of carbon atoms constituting the alkyl group is preferably 1 to 10, more preferably 1 to 6, and still more preferably 1 to 4.
- the aromatic hydrocarbon solvent having an alkyl group used in the present invention is preferably a solvent having a benzene ring and 1 to 3 alkyl groups having 1 to 10 carbon atoms, and is represented by the following formula (X). More preferred is a solvent.
- Formula (X) In the above formula (X), R is an alkyl group having 1 to 4 carbon atoms, and n is an integer of 1 to 3.
- the aromatic hydrocarbon solvent having an alkyl group is preferably at least one of toluene, xylene, trimethylbenzene (preferably mesitylene), butylbenzene (preferably tert-butylbenzene) and diethylbenzene, and more preferably Is at least one of xylene and trimethylbenzene and butylbenzene.
- Monocyclic terpenes such as all, menthone, pregon, ferrandral, carvone, carbenone, piperiton, 1,8-cineole, 1,4-cineole, ascaridol, curran, tujang, pinan, bornane, fencan, isobornane, isocan Fan, 3-Karen, Tsujen, Sabinen, Tujon, Tujanol, Pinene, Berbenol, Berbenone, Pinocarbon, Camphor, Borneol, Isoborneol, Fe Con, bicyclic terpenes such Fenchol Fen Ken is exemplified.
- the rinse composition C may contain components other than at least one of water and alcohol. Specifically, the other components described in the cleaning composition A can be used.
- a residue containing a sulfur atom or a phosphorus atom derived from the cleaning composition A tends to remain on the bottom surface of a copper pad having a depth of 5 to 50 ⁇ m, which is formed in a circular basin having a diameter of 400 to 800 ⁇ m.
- each component of the temporary adhesive was mixed to obtain a uniform solution, and then filtered using a polytetrafluoroethylene filter having a pore size of 0.2 ⁇ m to prepare a temporary adhesive. .
- the back surface of the substrate to be processed (the side on which the temporary adhesive layer is not provided) of the laminate B obtained above is polished to a thickness of 40 ⁇ m using a back grinder (manufactured by DISCO Corporation, DFG8540), and back grinded.
- a processed (thinned) laminate C was obtained.
- the surface of the substrate to be processed after being cleaned using the cleaning composition A and dried is cleaned using a wafer debonder apparatus (Synapse Z, manufactured by Tokyo Electron Co., Ltd.) while rotating the substrate to be processed. Cleaning was performed by supplying the agent composition B. The substrate to be processed after cleaning was spin-dried. Next, the laminate D is rotated using a wafer debonder apparatus (Synapse Z, manufactured by Tokyo Electron Co., Ltd.) after the surface of the substrate to be processed is cleaned using the cleaning composition B and dried. However, the rinse composition C was supplied for rinsing. It was dried by heating at 100 ° C. for 1 minute.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
L'invention concerne : une trousse qui comprend un adhésif temporaire contenant un composé de silicone et un agent nettoyant pour l'adhésif temporaire, et qui peut retirer adéquatement divers résidus ; un procédé de production d'un élément semi-conducteur ; et un procédé de nettoyage d'un substrat d'un élément semi-conducteur. Elle concerne une trousse qui comprend : une composition d'agent nettoyant (A) qui contient un adhésif temporaire qui contient au moins un composé contenant du silicium sélectionné parmi le groupe constitué de composés de silicone et de précurseurs de composés de silicone, au moins un acide organique qui a un groupe acide contenant un atome de soufre ou un atome de phosphore, et un solvant organique ; et une composition d'agent nettoyant (B) qui contient un composé d'acide carboxylique organique et au moins un élément parmi l'eau ou un solvant soluble dans l'eau.
Priority Applications (1)
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JP2018561400A JP6745362B2 (ja) | 2017-01-13 | 2018-01-11 | キット、半導体素子の製造方法および半導体素子の基板の洗浄方法 |
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JP2017004231 | 2017-01-13 | ||
JP2017-004231 | 2017-01-13 |
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WO2018131628A1 true WO2018131628A1 (fr) | 2018-07-19 |
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PCT/JP2018/000407 WO2018131628A1 (fr) | 2017-01-13 | 2018-01-11 | Trousse, procédé de production d'élément semi-conducteur, et procédé de nettoyage de substrat d'élément semi-conducteur |
Country Status (3)
Country | Link |
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JP (1) | JP6745362B2 (fr) |
TW (1) | TW201831667A (fr) |
WO (1) | WO2018131628A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021033654A1 (fr) * | 2019-08-19 | 2021-02-25 | 富士フイルム株式会社 | Composition nettoyante, liquide de rinçage, kit de nettoyage, procédé de production d'un objet de nettoyage et procédé de production d'un élément semi-conducteur |
KR102587963B1 (ko) * | 2023-02-24 | 2023-10-12 | 주식회사 비와이씨 | 솔더페이스트 잔사 제거에 효과적인 친환경 세정제조성물 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012186480A (ja) * | 2003-10-27 | 2012-09-27 | Wako Pure Chem Ind Ltd | 半導体基板表面の処理方法 |
WO2014092022A1 (fr) * | 2012-12-11 | 2014-06-19 | 富士フイルム株式会社 | Dissolvant de résine siloxane, procédé de dissolution de résine siloxane au moyen du dissolvant de résine siloxane, produit de substrat à semiconducteurs et procédé de fabrication d'élément semiconducteur |
-
2018
- 2018-01-08 TW TW107100632A patent/TW201831667A/zh unknown
- 2018-01-11 WO PCT/JP2018/000407 patent/WO2018131628A1/fr active Application Filing
- 2018-01-11 JP JP2018561400A patent/JP6745362B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012186480A (ja) * | 2003-10-27 | 2012-09-27 | Wako Pure Chem Ind Ltd | 半導体基板表面の処理方法 |
WO2014092022A1 (fr) * | 2012-12-11 | 2014-06-19 | 富士フイルム株式会社 | Dissolvant de résine siloxane, procédé de dissolution de résine siloxane au moyen du dissolvant de résine siloxane, produit de substrat à semiconducteurs et procédé de fabrication d'élément semiconducteur |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021033654A1 (fr) * | 2019-08-19 | 2021-02-25 | 富士フイルム株式会社 | Composition nettoyante, liquide de rinçage, kit de nettoyage, procédé de production d'un objet de nettoyage et procédé de production d'un élément semi-conducteur |
JPWO2021033654A1 (fr) * | 2019-08-19 | 2021-02-25 | ||
JP7160475B2 (ja) | 2019-08-19 | 2022-10-25 | 富士フイルム株式会社 | 洗浄用組成物、リンス液、洗浄キット、洗浄体の製造方法および半導体素子の製造方法 |
KR102587963B1 (ko) * | 2023-02-24 | 2023-10-12 | 주식회사 비와이씨 | 솔더페이스트 잔사 제거에 효과적인 친환경 세정제조성물 |
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Publication number | Publication date |
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TW201831667A (zh) | 2018-09-01 |
JPWO2018131628A1 (ja) | 2019-11-07 |
JP6745362B2 (ja) | 2020-08-26 |
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