WO2018116525A1 - 蛍光体素子および照明装置 - Google Patents
蛍光体素子および照明装置 Download PDFInfo
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- WO2018116525A1 WO2018116525A1 PCT/JP2017/030841 JP2017030841W WO2018116525A1 WO 2018116525 A1 WO2018116525 A1 WO 2018116525A1 JP 2017030841 W JP2017030841 W JP 2017030841W WO 2018116525 A1 WO2018116525 A1 WO 2018116525A1
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- optical waveguide
- phosphor
- fluorescence
- cladding layer
- film
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0003—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being doped with fluorescent agents
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Definitions
- the present invention relates to a phosphor element and an illumination device that emits white light.
- a white light source combining a blue laser or an ultraviolet laser and a phosphor.
- the light density of the excitation light can be increased by condensing the laser light, and the light intensity of the excitation light can also be increased by condensing a plurality of laser lights on the phosphor.
- the luminous flux and the luminance can be increased simultaneously without changing the light emitting area.
- a white light source combining a semiconductor laser and a phosphor has been attracting attention as a light source that replaces the LED.
- the phosphor glass used in automotive headlights is the phosphor glass “Lumifas” manufactured by Nippon Electric Glass Co., Ltd., National Research and Development Corporation, National Institute for Materials Science, Tamra Manufacturing Co., Ltd. The body is considered.
- a non-reflective film for excitation light and a total reflection film for fluorescence are formed on the incident surface of a flat optical waveguide. Fluorescence returning to the incident surface side oscillated in the optical waveguide can be reflected by the total reflection film on the incident surface and emitted from the emission surface side.
- a reflection film is formed on the side surface of the flat plate type transmission phosphor to prevent emission of fluorescence from the side surface of the flat plate type phosphor.
- Patent Documents 3 and 4 proposed in Patent Documents 3 and 4 that the excitation light is confined and propagated in a phosphor having an optical waveguide shape, and the generated fluorescence is confined in the optical waveguide.
- An object of the present invention is to provide a structure for efficiently extracting fluorescence from an emission-side end face of an optical waveguide as optical waveguide propagation light in a phosphor element that emits fluorescence by causing excitation light to enter the optical waveguide.
- the phosphor element of the present invention is Support substrate, An optical waveguide made of a phosphor that propagates excitation light in an optical waveguide and generates fluorescence, wherein the optical waveguide emits the excitation light and the fluorescence, and an end face opposite to the exit end face
- An optical waveguide having a bottom surface, a top surface facing the bottom surface, and a pair of side surfaces, A bottom-side cladding layer covering the bottom surface of the optical waveguide;
- An upper-side cladding layer covering the upper surface of the optical waveguide;
- Side-side cladding layers that respectively cover the pair of side surfaces of the optical waveguide,
- a side-surface reflective film that covers each of the side-surface-side cladding layers, and a bottom-surface-side reflective film provided between the support substrate and the bottom-surface side cladding layer are provided.
- the present invention is a lighting device comprising a light source that oscillates excitation light and the phosphor element,
- the present invention relates to a lighting device, wherein white light is emitted from the optical waveguide.
- the fluorescence reflected at the boundary with the cladding layer can be propagated to the emission side end surface, and the total reflection condition of the optical waveguide cannot be satisfied. Fluorescence incident on the inside is also reflected by the reflecting films provided on the bottom surface, the top surface, and each side surface and re-enters the optical waveguide, so that the amount of emitted fluorescence from the emission side end surface can be stabilized.
- FIG. 1 is a schematic diagram showing a phosphor element 1 according to an embodiment of the present invention.
- 3 is a schematic diagram showing a planar dimension of the phosphor element 1.
- FIG. 2 is a side view of the phosphor element 1.
- FIG. It is a schematic diagram which shows the planar dimension of the phosphor element 11 which concerns on embodiment of this invention.
- It is a schematic diagram which shows the planar dimension of the phosphor element 21 which concerns on embodiment of this invention.
- 3 is a schematic diagram showing a cross section of a phosphor element 31.
- FIG. 3 is a schematic diagram showing the propagation of fluorescence in the phosphor element 1.
- FIG. 3 is a schematic diagram showing the propagation of fluorescence in the phosphor element 11.
- FIG. 3 is a schematic diagram showing the propagation of fluorescence in the phosphor element 11.
- FIG. 3 is a schematic diagram showing a cross section of a phosphor element 31.
- FIG. 3 is a schematic diagram showing light propagation in a cross section of phosphor element 31.
- FIG. It is a schematic diagram of the phosphor element 41 according to a control example. It is an optical microscope photograph which shows the fluorescence radiate
- FIG. 1 to 3 show a phosphor element 1 according to an embodiment of the present invention.
- a plurality of protrusions 8 are provided on the support substrate 2 of the phosphor element 1, and a groove 9 is provided between the protrusions 8.
- the bottom-side reflecting film 4 ⁇ / b> A, the bonding layer 3, the bottom-side cladding layer 5 ⁇ / b> A, and the optical waveguide 6 made of an optical material are provided.
- a bottom-side cladding layer 5A is provided on the bottom surface 6a of the optical waveguide 6, a top-side cladding layer 5B is provided on the top surface 6b, and the side-side cladding layers 5C and 5D are provided on the side surfaces 6c and 6d, respectively. Is provided. Further, the upper surface side reflection film 4B is provided on the upper surface side cladding layer 5B, and the side surface side reflection films 4C and 4D are provided on the respective side surface side cladding layers 5C and 5D.
- a passivation film may be formed on the upper surface side reflective film 4B in order to prevent the deterioration of the reflective film. An oxide film can be exemplified as the passivation film.
- the side wall surface 9a and the bottom wall surface 9b of the groove 9 are covered with the concave side cladding layers 5E and 5F, and the concave side cladding layers 5E and 5F are covered with the concave side reflecting films 4E and 4F.
- the recess-side cladding layer 5E and the side-side cladding layer 5C are continuous, and the recess-side reflection film 4E and the side-side reflection films 4C and 4D are continuous.
- the width W of the upper surface of the optical waveguide is constant between the exit end face 6f and the opposed end face 6e.
- the thickness T of the optical waveguide is constant between the emission side end face 6f and the opposed end face 6e.
- the excitation light may be incident from the opposing end surface, or may be incident from the emission side end surface and totally reflected by the opposing end surface.
- the fluorescence converted in the optical waveguide 6 not only the fluorescence reflected at the boundary between the optical waveguide 6 and the cladding layers 5A to 5D can be propagated to the emission side end face, but also the optical waveguide. Fluorescence that enters the cladding layer without satisfying the total reflection condition is also reflected by the reflecting films provided on the bottom surface, top surface, and each side surface and reenters the optical waveguide. The amount of emitted light can be increased.
- a groove having a side wall surface and a bottom wall surface is formed in the support substrate, and a recess side cladding layer that covers the side wall surface and the bottom wall surface is provided on the recess side cladding layer.
- the concave side reflective film is provided, the concave side cladding layer and the side side cladding layer are continuous, and the concave side reflective film and the side side reflective film are continuous. Fluorescence incident at an angle that does not satisfy the total reflection condition at the interface between the optical waveguide and the clad layer is normally not reflected but radiated into the clad layer. In this case, it is reflected by each reflective film. Therefore, such reflection can be repeated to propagate through the phosphor and reach the emission end face.
- the width of the upper surface of the optical waveguide increases from the opposed end surface toward the exit side end surface. As a result, the amount of emitted light at the exit-side end face can be further increased.
- the width W of the optical waveguide 6A is WI at the opposed end face 6e and WO at the exit end face 6f.
- the width W increases from WI to WO.
- ⁇ 1 is an angle between the longitudinal direction K of the optical waveguide and the side surface 6c
- ⁇ 2 is an angle between the longitudinal direction K of the optical waveguide and the side surface 6d.
- the angles ⁇ 1 and ⁇ 2 are constant.
- ⁇ 1 and ⁇ 2 are preferably constant, but need not be constant, and may vary between the emission side end face and the opposed end face.
- the width W continuously and smoothly increases from the opposing end surface toward the emission side end surface.
- the width W of the optical waveguide 6B is WI at the opposed end face 6e and WO at the exit end face 6f.
- the width W increases from WI to WO.
- the angle ⁇ 2 between the longitudinal direction of the optical waveguide and the side surface 6d is constant, and ⁇ 1 is 0 °.
- the thickness of the optical waveguide increases from the opposed end surface toward the exit side end surface.
- the thickness T of the optical waveguide 6C is TI at the opposed end face 6e, and TO at the exit end face 6f.
- the thickness T increases from TI toward TO.
- ⁇ is an angle between the longitudinal direction K of the optical waveguide and the upper surface 6b.
- the angle ⁇ is constant.
- ⁇ is preferably constant, but is not necessarily constant, and may be changed between the emission-side end surface and the opposed end surface.
- the thickness T continuously and smoothly increases from the opposing end surface toward the emission side end surface.
- the width of the optical waveguide 6 is constant.
- the excitation light A propagates in the optical waveguide and hits the phosphor particles 12
- fluorescence is emitted from the phosphor particles 12.
- the fluorescence is uniformly emitted from the phosphor in all directions.
- the fluorescence F emitted from the phosphor 12 to the end face on the emission side reaches the interface with the cladding layer at the incident angle ⁇ p.
- the fluorescence is reflected at the interface, propagates through the optical waveguide, and exits from the exit-side end face 6f. To do.
- the incident angle ⁇ p of the fluorescence does not satisfy the total reflection condition, the light is refracted as indicated by an arrow G, reflected by the reflective films 4C and 4D, and reflected as indicated by an arrow H.
- the light propagating while repeating such reflection is not propagated in the optical waveguide, but part of the light is attenuated by the absorption of the reflection film or the phosphor in the phosphor, and part of the light reaches the emission side end face 6f.
- this light since this light has no directivity and is radiated from the emission end, there is a fluorescent component that cannot be mixed with the excitation light propagating through the optical waveguide. Therefore, the extraction efficiency of white light cannot be greatly improved.
- both the excitation light and the fluorescence propagate without being propagated through the optical waveguide.
- Part of the light and fluorescence is attenuated in the phosphor, and both lights that have reached the emission side end face 6f have no directionality and are emitted from the end face. Therefore, it is difficult to extract white light in the front direction, which improves the extraction efficiency. difficult.
- the fluorescence C generated from the phosphor 12 in the direction perpendicular to the longitudinal direction of the optical waveguide is reflected by the reflecting film as indicated by an arrow D, and is repeatedly reflected in the optical waveguide and finally attenuated. It will be. Further, the fluorescence E generated from the phosphor 12 toward the opposite end face side repeats the same reflection as described above, and finally reaches the opposite end face. For this reason, it is preferable to provide a reflective film that reflects fluorescence on the opposite end surface to reflect the fluorescence toward the emission side end surface.
- the width W of the optical waveguide 6 gradually increases from the facing end surface toward the emitting side end surface.
- the excitation light A propagates in the optical waveguide and hits the phosphor particles 12
- fluorescence is emitted from the phosphor particles 12.
- the fluorescence is uniformly emitted from the phosphor in all directions.
- the fluorescence F emitted from the phosphor 12 to the end face on the emission side reaches the interface with the cladding layer at the incident angle ⁇ p.
- the refractive index np of the optical waveguide, the refractive index nc of the cladding layer, and the incident angle ⁇ p satisfy the total reflection condition, the fluorescence is reflected at the interface and propagates through the optical waveguide.
- the incident angle ⁇ p of the fluorescence F becomes larger by ⁇ 2 than in the example of FIG. 7, and is totally reflected at the interface with the cladding layer. It becomes easy to do. For this reason, the fluorescent light F that could not satisfy the total reflection condition in the example of FIG. 7 is totally reflected at the interface with the cladding layer, propagates in the optical waveguide, and is not absorbed by the reflective film, and the amount of emitted light further increases. To do.
- the incident angle ⁇ p of the fluorescence does not satisfy the total reflection condition
- the fluorescence C generated from the phosphor 12 in the direction perpendicular to the longitudinal direction K of the optical waveguide similarly enters the cladding layer.
- the angle is ⁇ 2, and it is assumed that the total reflection angle cannot be satisfied at this time.
- the light is reflected by the reflective film 4D, but the angle of incidence on the interface between the opposite side surface 6c and the clad layer 5C is further increased by ⁇ 1, so that the phosphor and The total reflection condition can be satisfied at the interface with the cladding layer, and finally the optical waveguide propagates.
- the light When the light is incident on the side surface 6d at a right angle, the light is reflected by the reflection film 4D. However, since the angle incident on the interface of the side surface 6c is increased by ⁇ 2, the light travels toward the emission end surface, and the reflection film 4C As the reflection film 4D repeats the reflection, the incident angle ⁇ p increases, the total reflection condition can be satisfied at the interface between the phosphor and the cladding layer, and the optical waveguide propagates.
- the fluorescence proceeds to either the emitting side end surface side or the facing end surface side and is reflected. It is possible to eliminate fluorescence that is repeatedly attenuated in the phosphor.
- the fluorescence E directed from the phosphor 12 toward the opposite end face changes every time it is reflected by the reflecting film, and changes its direction toward the exit end face by an angle ⁇ 2, so that the multiple reflection is repeated until it reaches the exit end face.
- the propagation direction changes, and finally propagates through the optical waveguide and exits from the exit end face. Nevertheless, the fluorescence that has reached the opposing end face is reflected by the fluorescent reflecting film provided on the opposing end face, and this light can finally propagate through the optical waveguide and be emitted from the exit end face.
- the operational effect is described only when the width is changed, but the same applies when the thickness direction is changed. Even when the upper surface is inclined by the angle ⁇ as shown in FIG.
- the fluorescent light reflected to the side can be emitted from the emission side end face as light propagated through the optical waveguide by a similar mechanism.
- both the width W and the thickness T are continuously increased from the opposite end surface toward the emission side end surface, so that the light propagates in the optical waveguide against the omnidirectional fluorescence generated in the phosphor. It can be converted and can be emitted to the emission side end face with high efficiency, and white light can be extracted with high efficiency by mixing with the excitation light similarly propagating through the optical waveguide.
- the heat generated in the phosphor can be transferred to the support substrate with high thermal conductivity through the reflective film with high thermal conductivity, so that the change in uneven color can be remarkably eliminated without lowering the conversion efficiency due to thermal degradation.
- An element can be realized.
- the width of the optical waveguide varies from the top surface to the bottom surface.
- the width of the optical waveguide 6D gradually increases from the width WU on the top surface toward the width WB on the bottom surface.
- ⁇ is an inclination angle of the side surface 6c (6d) with respect to the normal M of the surface 2a of the support substrate 2.
- this structure cannot be expected to increase the amount of emitted fluorescence light, it can further increase the amount of emitted fluorescence light when combined with a structure that is inclined by an inclination angle ⁇ in the thickness direction of the optical waveguide. it can.
- the side surface is inclined at an inclination angle ⁇
- the fluorescence propagating in the width direction of the optical waveguide is propagated in the thickness direction of the optical waveguide when reflected by this side surface or a reflecting surface parallel to the side surface. Therefore, even when the angles ⁇ 1 and ⁇ 2 are not inclined in the width direction of the optical waveguide, the optical waveguide can be propagated only by the inclination in the thickness direction, and the amount of emitted light can be increased.
- fluorescence is radiated from the phosphor 12 in all directions, and the light radiated sideways is reflected by the side surface 6c (6d).
- the side surface 6c (6d) is inclined with respect to the normal line M, the fluorescence is reflected toward the bottom surface and further reflected on the bottom surface.
- the fluorescence is reflected on the top surface, the bottom surface, and the side surface, and does not repeat between the side surfaces.
- emission of fluorescence to the emission side end face is promoted.
- the fluorescence reflected from the side surface can be redirected to light that reflects the reflected light upward and bottom. From this, by combining with a structure with a changed thickness, all the fluorescence generated in the phosphor can be emitted efficiently as optical waveguide propagating light to the emission side end face, It is possible to extract white light with high efficiency by mixing.
- the optical waveguide width on the bottom surface is made larger than the optical waveguide width on the top surface, but the optical waveguide width on the bottom surface can be made smaller than the optical waveguide width on the top surface. From this point of view, a triangular shape in which one of the optical waveguide widths is zero may be used.
- the optical waveguide width is preferably changed smoothly, but may be changed stepwise.
- a reflecting portion that reflects fluorescence is provided on the opposing end face.
- the reflection part that reflects the fluorescence may reflect the excitation light or transmit the excitation light.
- the opposing end surface may be an incident surface for allowing excitation light to enter.
- a film that totally reflects the fluorescence and does not reflect the excitation light is formed on the opposite end face side.
- the exit-side end surface may be an incident surface on which the excitation light is incident.
- a reflective film that totally reflects the excitation light is provided on the opposite end face side.
- the waveguide phosphor element of the present invention may be a non-grating phosphor element that does not include a grating (diffraction grating) in the optical waveguide, or may be a grating element.
- the thickness of the optical waveguide is a dimension of the optical waveguide viewed in a direction perpendicular to the surface 2 a of the support substrate 2.
- the width of the optical waveguide is a dimension of the optical waveguide viewed in a direction parallel to the surface 2 a of the support substrate 2.
- the width W of the optical waveguide is preferably 20 ⁇ m or more and more preferably 50 ⁇ m or more from the viewpoint of efficiently coupling excitation light and increasing the amount of emitted light.
- W is preferably 900 ⁇ m or less, more preferably 500 ⁇ m or less, and even more preferably 300 ⁇ m or less.
- the ratio (WO / WI) between the optical waveguide width WO at the output side end face and the optical waveguide width WI at the opposing end face is preferably 1.2 or more, and more preferably 1.5 or more.
- WO / WI is preferably 10 or less, and more preferably 5 or less.
- the thickness T of the optical waveguide is preferably 20 ⁇ m or more and more preferably 50 ⁇ m or more from the viewpoint of efficiently coupling excitation light and increasing the amount of emitted light.
- T is preferably 900 ⁇ m or less, and from the viewpoint of reducing the influence of scattering due to the surface roughness on the side surface when forming the optical waveguide, 200 ⁇ m or less is preferable, and 150 ⁇ m or less is preferable. Further preferred.
- the ratio (TO / TI) of the optical waveguide thickness TO at the exit end face to the optical waveguide width TI at the opposing end face is preferably 1.1 or more, and more preferably 1.2 or more.
- TO / TI is preferably 2 or less, and more preferably 1.9 or less.
- angles ⁇ 1, ⁇ 2, and ⁇ of the top surface and the side surface with respect to the longitudinal direction of the optical waveguide are preferably 2 ° or more, and more preferably 4 ° or more, from the viewpoint of increasing the amount of emitted light.
- angles ⁇ 1, ⁇ 2, and ⁇ of the top surface and the side surface with respect to the longitudinal direction of the optical waveguide are such that excitation light and fluorescence cannot be mixed well if the angle is large, and white at the center when viewed on a surface perpendicular to the light propagation direction.
- the angles ⁇ 1, ⁇ 2, and ⁇ are preferably 13 ° or less, more preferably 10 ° or less, and even more preferably 5 ° or less.
- the inclination angle ⁇ (see FIG. 9) of each side surface with respect to the normal M of the surface of the support substrate is preferably 10 ° or more, and more preferably 15 ° or more from the viewpoint of increasing the amount of emitted light.
- ⁇ is preferably 50 ° or less, more preferably 35 ° or less, still more preferably 30 ° or less, and particularly preferably 25 ° or less.
- the length of the optical waveguide (the distance between the output side end face and the opposing end face) L is not particularly limited, but in general, it is necessary to repeat reflection until the fluorescence propagates in the optical waveguide. In order to reduce loss, it can also be made into 2 mm or less.
- An anti-peeling layer preferably an oxide film, may be formed between the support substrate and the reflective film in order to prevent the reflective film from peeling off.
- the material of such an oxide film is not particularly limited, but aluminum oxide, tantalum oxide, and titanium oxide are preferable. However, the thermal conductivity is preferably larger than that of the phosphor, and aluminum oxide is most preferable from such a viewpoint.
- the material of the reflective film may be a metal film such as gold, aluminum, copper, or silver, a mixed crystal film containing these metal components, or a dielectric multilayer film.
- a metal film such as gold, aluminum, copper, or silver
- a mixed crystal film containing these metal components or a dielectric multilayer film.
- a metal layer such as Cr, Ni, Ti, or the like can be formed as a buffer layer of the metal film so that the cladding layer does not peel off.
- the clad layer may be made of a material having a refractive index smaller than that of the phosphor, and the clad layer may also serve as the adhesive layer.
- the material of such a cladding layer is preferably SiO 2 , Al 2 O 3 , MgF 2 , CaF 2 , MgO or the like. Further, from the viewpoint of dissipating heat generated in the phosphor substrate through the support substrate, it is better to make the thermal conductivity higher than that of the phosphor, and Al 2 O 3 and MgO are particularly preferable as such materials.
- a bonding layer can be provided between the cladding layer and the reflective film.
- the material of such a bonding layer is not particularly limited, but aluminum oxide, tantalum oxide, and titanium oxide are preferable. However, the thermal conductivity is preferably larger than that of the phosphor, and aluminum oxide is most preferable from such a viewpoint.
- Such a bonding layer may be provided between the reflective film and the support substrate.
- the bottom side cladding layer, the bottom side reflection film, and the bonding layer are formed on the phosphor side, the bonding layer is formed on the support substrate side, and the two can be directly bonded.
- the phosphor may be phosphor glass, single crystal, or polycrystalline.
- rare earth element ions are dispersed in a base glass.
- Examples of the base glass include silica, boron oxide, calcium oxide, lanthanum oxide, barium oxide, zinc oxide, phosphorus oxide, aluminum fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, and oxide glass containing barium chloride.
- YAG yttrium, aluminum, garnet
- YAG yttrium, aluminum, garnet
- Tb, Eu, Ce, and Nd are preferable, but La, Pr, Sc, Sm, Er, Tm, Dy, Gd, and Lu may be used.
- the phosphor single crystal Y 3 Al 5 O 12 , Ba 5 Si 11 A 17 N 25 , and Tb 3 Al 5 O 12 are preferable. Further, as a doping component to be doped in the phosphor, rare earth element ions such as Tb, Eu, Ce, and Nd are used. From the viewpoint of suppressing thermal degradation, the phosphor is preferably a single crystal, but even if it is polycrystalline, if it is a dense body, the thermal resistance at the grain boundary portion can be lowered and the translucency can be increased. And can function as an optical waveguide.
- the specific material of the support substrate is not particularly limited, and may be glass such as lithium niobate, lithium tantalate, quartz glass, or quartz.
- a support substrate having good heat dissipation characteristics can be used.
- alumina, aluminum nitride, silicon carbide, Si, silicon nitride, tungsten, copper tungsten, magnesium oxide and the like can be exemplified.
- An anti-peeling layer preferably an oxide film, may be formed between the support substrate and the reflective film in order to prevent the optical waveguide from peeling off.
- the material of such an oxide film is not particularly limited, but aluminum oxide, tantalum oxide, and titanium oxide are preferable. However, the thermal conductivity is preferably larger than that of the phosphor, and aluminum oxide is most preferable from such a viewpoint.
- a semiconductor laser made of a GaN material having high reliability is suitable for exciting the phosphor for illumination.
- a light source such as a laser array arranged in a one-dimensional manner can also be realized. It may be a super luminescence diode or a semiconductor optical amplifier (SOA).
- the method for generating white light from the semiconductor laser and the phosphor is not particularly limited, but the following methods are conceivable.
- Method of obtaining white light by generating yellow fluorescence with blue laser and phosphor Method of obtaining white light by generating red and green fluorescence with blue laser and phosphor
- red and blue with phosphor from blue laser or ultraviolet laser Method of generating white fluorescence by generating green fluorescence Method of obtaining white light by generating blue and yellow fluorescence with a phosphor from a blue laser or ultraviolet laser
- each end face of the light source element and the phosphor element may be cut obliquely in order to suppress the end face reflection.
- the phosphor element and the support substrate may be bonded together by adhesion or direct bonding.
- the phosphor element may be formed on the support substrate by a film formation method such as sputtering or CVD.
- FIG. 14 illustrates the structure of a white laser light emitting device to which the phosphor element of the present application is applied.
- the mounting substrate 44 is fixed in the package 42, and the laser light source 43 that oscillates the excitation light and the phosphor element 1 (11, 31, 41) are linearly arranged on the mounting substrate 44.
- Laser light emitted from the light source 43 is directly incident on the optical waveguide of the phosphor element.
- the element length of the laser is, for example, about 1.5 mm. When the element length of the waveguide phosphor is 2 mm, it can be realized with a size of 5 mm or less including the mounting substrate.
- the white laser light C with high directivity of 450 lm or more can be obtained.
- Example A (Preparation of phosphor element of Example A1) A phosphor element 1 having a form as shown in FIGS. 1 to 3 was produced. Specifically, on a heat dissipation substrate made of aluminum nitride having a thickness of 1 mm and a 4-inch wafer, an anti-peeling film (not shown) made of Al 2 O 3 is 0.2 ⁇ m by sputtering, and a reflective film 4A made of Al is 0. .5 ⁇ m film was formed. Next, a bonding layer 3 made of Al 2 O 3 was formed to a thickness of 0.3 ⁇ m.
- a cladding layer 5A made of Al 2 O 3 was formed to a thickness of 0.3 ⁇ m on a 4-inch phosphor wafer having a thickness of 300 ⁇ m made of YAG (yttrium, aluminum, garnet) polycrystal doped with Ce. Further, the two layers were bonded together by direct bonding at room temperature with an ion gun between Al 2 O 3 layers.
- the thin plate was polished to a thickness T of the optical waveguide of 100 ⁇ m.
- grinder grinding and lapping were performed, and finally CMP (Chemical Mechanical) polishing was performed.
- CMP polishing two grooves 9 having a depth of 150 ⁇ m were processed by cutting by dicing using a blade having a width of 200 ⁇ m and # 6000 to form a ridge type optical waveguide having a width W of 100 ⁇ m.
- the clad layer 2 made of Al 2 O 3 is 0.3 ⁇ m
- the reflective film made of Al is 0.5 ⁇ m
- the protective film (not shown) made of Al 2 O 3 is 0.2 ⁇ m on the ridge optical waveguide forming surface.
- Example A2 (Preparation of phosphor element of Example A2) A phosphor element 31 as shown in FIGS. 1, 2 and 6 was produced. Specifically, in the same manner as in Example A1, a polycrystalline phosphor plate was bonded to a heat dissipation substrate made of aluminum nitride to produce a composite substrate.
- the wafer is placed on the high-speed slicing device so that the thickness T of the optical waveguide at the entrance is 100 ⁇ m. And thinned by cutting. At this time, the inclination angle ⁇ of the thickness of the phosphor waveguide was 5 °.
- a phosphor element 41 as shown in FIGS. 2, 3 and 9 was produced. Specifically, it was produced in the same manner as in Example A2. However, in the ridge waveguide forming process by cutting, cutting was performed by selecting a blade so that the width W of the ridge upper surface portion was 100 ⁇ m and the inclination angle ⁇ was 20 °. The other processes were the same as in Example A2. After processing the thin plate, a clad layer, a reflective film, and a protective film (not shown) were formed in the same manner as in Example A1, and bar cutting, end face film formation, and chip cutting were performed to manufacture a phosphor element.
- the average output represents the time average of the total luminous flux.
- an integrating sphere spherical photometer
- Temperature change A 500 cycle test was performed under an environment of 40 ° C. to 80 ° C., and the variation in color unevenness of illumination light was evaluated as described later. In this test, the measurement was performed under the condition that the temperature of the semiconductor laser, which is a light source, was not changed, and only the phosphor was changed in temperature.
- Example B In the phosphor element of Example A2, the thickness of the phosphor at the incident portion and the waveguide width were fixed, and the inclination angles ⁇ 1 and ⁇ 2 were 0 °, 5 °, 10 °, 13 °, 15 °, and 20 °, respectively. The color unevenness of the element was measured. The results are shown in Table 2.
- the structure of the phosphor element can be applied to structures other than those described in the above embodiments.
- a peeling prevention film made of Al 2 O 3 and a bonding layer made of Ta 2 O 5 are formed by sputtering on a heat dissipation substrate made of aluminum nitride having a thickness of 1 mm and a 4-inch wafer, while a polycrystalline phosphor cladding layer made of Al2O3 on the wafer, the reflective film made of Al, peeling prevention film of Al 2 O 3, by forming a bonding layer made of Ta 2 O 5, by ion gun both with Ta 2 O 5 layer between You may use the structure which bonded together by normal temperature direct joining.
- Example A2 an element in which the inclination angle ⁇ shown in FIG. 9 was changed was produced. However, in the ridge waveguide forming step by cutting, cutting was performed by selecting a blade having a width W of the ridge upper surface portion of 100 ⁇ m and an inclination angle ⁇ changed from 0 ° to 60 °. The other processes were the same as in Example A2.
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Abstract
Description
支持基板、
励起光を光導波路伝搬し、蛍光を発生する蛍光体からなる光導波路であって、前記光導波路が、前記励起光および前記蛍光を出射する出射側端面、前記出射側端面と反対側の対向端面、底面、この底面に対向する上面、および一対の側面を有している光導波路、
前記光導波路の前記底面を被覆する底面側クラッド層、
前記光導波路の前記上面を被覆する上面側クラッド層、
前記光導波路の一対の前記側面をそれぞれ被覆する側面側クラッド層、
前記上面側クラッド層を被覆する上面側反射膜、
前記側面側クラッド層をそれぞれ被覆する側面側反射膜、および
前記支持基板と前記底面側クラッド層との間に設けられている底面側反射膜を備えていることを特徴とする。
前記光導波路から白色光が放射することを特徴とする、照明装置に係るものである。
蛍光体素子1の支持基板2には突起8が複数設けられており、突起8の間に溝9が設けられている。そして、突起8上には、底面側反射膜4A、接合層3、底面側クラッド層5A、光学材料からなる光導波路6が設けられている。
蛍光体は励起光から蛍光に変換するときに変換損失に伴う発熱が起こり、この発熱により蛍光体自身の温度が上昇すると、変換効率の低下に至り、励起光量と蛍光量のバランスが変化して色むらの原因となる。また、反射膜に吸収されて反射膜が発熱し、これによって蛍光体の温度が上昇して同様に光特性が変化する場合がある。
7の例で全反射条件を満足できなかった蛍光Fは、クラッド層との界面で全反射するようになり、光導波路伝搬し反射膜による吸収が起こらないので、出射光量は一層増加する。
本例では、蛍光体12からあらゆる方向へと蛍光が放射されるが、このうち真横に放射された光は、側面6c(6d)によって反射される。このとき、側面6c(6d)が法線Mに対して傾斜していることから、蛍光は底面へと向かって反射され、底面で更に反射される。このように多重反射を繰り返すうちに、蛍光は、上面、底面、側面で反射されることになり、側面間で反復することはない。ここで、光導波路の幅と厚さとの少なくとも一方を前述のように出射側端面と対向端面との間で変化させていると、蛍光の出射側端面への出射が促進されることになる。このように傾斜した場合、側面で反射した蛍光は、反射した光を上・底面側に反射する光に向きを変えることができる。このことから厚みを変化した構造と組み合わせることによって、蛍光体内で発生する蛍光すべてに対して、出射側端面に光導波路伝搬光として高効率に出射することができ、同じく光導波路伝搬する励起光とミキシングして高効率に白色光を取り出すことが可能となる。
蛍光体ガラスの場合は、ベースとなるガラス中に希土類元素イオンを分散したものである。
青色レーザーと蛍光体により黄色の蛍光を発生し、白色光を得る方法
青色レーザーと蛍光体により赤色と緑色の蛍光を発生し白色光を得る方法
また青色レーザーや紫外レーザーから蛍光体により赤色、青色、緑色の蛍光を発生し白色光を得る方法
青色レーザーや紫外レーザーから蛍光体により青色と黄色の蛍光を発生し白色光を得る方法
(実施例A1の蛍光体素子の作製)
図1~図3に示すような形態の蛍光体素子1を作製した。
具体的には、厚み1mm、4インチウエハーの窒化アルミニウムからなる放熱基板上にスパッタリングにてAl2O3からなる剥離防止膜(図示せず)を0.2μm、Alからなる反射膜4Aを0.5μm成膜した。次に、Al2O3からなる接合層3を0.3μm成膜した。また、CeをドープしたYAG(イットリウム・アルミニウム・ガーネット)多結晶からなる厚み300μm、4インチ蛍光体ウエハー上にAl2O3からなるクラッド層5Aを厚さ0.3μm成膜した。さらに、両者をAl2O3層同士でイオンガンによる常温直接接合にて貼り合わせを行った。
成膜後、複合ウエハーをダイシングにて幅200μm、#4000のブレードにて光導波路長1mmのバー状に切断し、入射側の端面については、IBS(Ion-beam Sputter Coater)成膜装置にて励起光である450nm帯では無反射、蛍光である560nm帯では全反射となる誘電体多層膜を成膜した。
最後に、成膜後の切断で使用したブレードを使用して幅0.8mmにチップ切断をして、蛍光体素子を作製した。
図1、図2および図6に示すような蛍光体素子31を作製した。
具体的には、実施例A1と同様にして窒化アルミニウムからなる放熱基板に多結晶蛍光体板を貼り合わせし、複合基板を作製した。
図2、図3および図9に示すような蛍光体素子41を作製した。具体的には、実施例A2と同様にして作製した。
ただし、切削加工によるリッジ導波路形成工程では、リッジ上面部の幅Wが100μm、傾斜角度βが20°になるようにブレードを選定して切削加工を実施した。その他のプロセスは実施例A2と同じとした。
薄板加工後、実施例A1と同様にクラッド層、反射膜、保護膜(図示せず)を成膜し、バー切断、端面成膜、チップ切断を実施し、蛍光体素子を作製した。
実施例A1と同様にして、図11、図2、図3に示す形態の蛍光体素子41を作製した。
ただし、図11に示すように、光導波路の側面側、上面側には、反射膜を設けなかった。
実施例1と同様にして、図1、図2、図3に示す形態の蛍光体素子を作製した。ただし、本例では、クラッド層を設けず、光導波路の上面、底面、側面上にそれぞれ反射膜を直接形成した。
チップ化した各素子は、出力3WのGaN系青色レーザー光源を使用して照明光の評価を行った。各例の蛍光体素子の評価結果を表1に示す。
平均出力は、全光束の時間平均を表す。全光束測定は,積分球(球形光束計)を使用して、被測定光源と全光束が値付けられた標準光源とを同じ位置で点灯し、その比較によって行う。詳細には、JISC7801にて規定されている方法を用いて測定を行った。
温度変化―40℃から80℃での環境下で、500サイクル試験を実施して、後述のように照明光の色ムラ変動を評価した。この試験においては、光源である半導体レーザーには温度変動がない状態とし、蛍光体のみに温度変化がおこる条件下で測定した。
出力した光を輝度分布測定装置を用いて色度図で評価を行った。そして、色度図において、中央値x:0.3447±0.005、y:0.3553±0.005の範囲にある場合は「色ムラなし」とし、この範囲外の場合には「色ムラあり」とした。
実施例A2の蛍光体素子において、入射部の蛍光体厚みと導波路幅を固定して傾斜角θ1、θ2を、0°、5°、10°、13°、15°、20°にした各素子の色ムラを測定した。この結果を表2に示す。
また、実験Bと同様にして、厚み方向の傾斜角αを0°、5°、10°、13°、15°、20°に変化させた。この場合も、実験Bと同じ角度で、色ムラ面内分布有りが発生した。
例えば、厚み1mm、4インチウエハーの窒化アルミニウムからなる放熱基板上にスパッタリングにてAl2O3からなる剥離防止膜、Ta2O5からなる接合層を成膜して、一方、多結晶蛍光体ウエハー上にAl2O3からなるクラッド層、Alからなる反射膜、Al2O3からなる剥離防止膜、Ta2O5からなる接合層を成膜して、両者をTa2O5層同士でイオンガンによる常温直接接合にて貼り合わせを行った構造を使用してもよい。
実施例A2において、図9に示す傾斜角度βを変更した素子を作製した。
ただし、切削加工によるリッジ導波路形成工程では、リッジ上面部の幅Wを100μmとし、傾斜角度βは、0°から60°に変更したものをブレードを選定して切削加工を実施した。その他のプロセスは実施例A2と同じとした。
Claims (13)
- 支持基板、
励起光を光導波路伝搬し、蛍光を発生する蛍光体からなる光導波路であって、前記光導波路が、前記励起光および前記蛍光を出射する出射側端面、前記出射側端面と反対側の対向端面、底面、この底面に対向する上面、および一対の側面を有している光導波路、
前記光導波路の前記底面を被覆する底面側クラッド層、
前記光導波路の前記上面を被覆する上面側クラッド層、
前記光導波路の一対の前記側面をそれぞれ被覆する側面側クラッド層、
前記上面側クラッド層を被覆する上面側反射膜、
前記側面側クラッド層をそれぞれ被覆する側面側反射膜、および
前記支持基板と前記底面側クラッド層との間に設けられている底面側反射膜を備えていることを特徴とする、蛍光体素子。 - 前記支持基板に、側壁面と底壁面とを有する溝が形成されており、前記側壁面と前記底壁面とを被覆する凹部側クラッド層と、この凹部側クラッド層上に設けられた凹部側反射膜を備えており、前記凹部側クラッド層と前記側面側クラッド層とが連続しており、前記凹部側反射膜と前記側面側反射膜とが連続していることを特徴とする、請求項1記載の素子。
- 前記光導波路の前記上面の幅が、前記対向端面から前記出射側端面へと向かって大きくなっていることを特徴とする、請求項1または2記載の素子。
- 前記光導波路の長手方向に対する前記一対の前記側面のうち少なくとも一方の傾斜角度が2°以上、13°以下であることを特徴とする、請求項3記載の素子。
- 前記光導波路の厚さが、前記対向端面から前記出射側端面へと向かって大きくなっていることを特徴とする、請求項1~4のいずれか一つの請求項に記載の素子。
- 前記光導波路の長手方向に対する前記上面または前記底面の傾斜角度が2°以上、13°以下であることを特徴とする、請求項5記載の素子。
- 前記光導波路の幅が、前記上面から前記底面へと向かって変化していることを特徴とする、請求項1~6のいずれか一つの請求項に記載の素子。
- 前記底面の法線に対する前記一対の側面のうち少なくとも一方の傾斜角度が10°以上、50°以下であることを特徴とする、請求項7記載の素子。
- 前記蛍光を反射する反射部が前記対向端面に設けられていることを特徴とする、請求項1~8のいずれか一つの請求項に記載の素子。
- 前記対向端面が、前記励起光を入射させるための入射面であることを特徴とする、請求項1~9のいずれか一つの請求項に記載の素子。
- 前記出射側端面が、前記励起光を入射させるための入射面であることを特徴とする、請求項1~10のいずれか一つの請求項に記載の素子。
- 前記支持基板と前記底面側反射膜との間に設けられた剥離防止層を備えていることを特徴とする、請求項1~11のいずれか一つの請求項に記載の素子。
- 励起光を発振する光源および蛍光体素子を備える照明装置であって、
前記蛍光体素子が、請求項1~12のいずれか一つの請求項に記載の蛍光体素子であり、前記光導波路から白色光が放射することを特徴とする、照明装置。
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EP3399228A4 (en) | 2019-02-27 |
US20190310408A1 (en) | 2019-10-10 |
JPWO2018116525A1 (ja) | 2018-12-20 |
EP3399228B1 (en) | 2021-12-29 |
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