Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
  • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
  • B24B21/02—Machines or devices using grinding or polishing belts; Accessories therefor for grinding rotationally symmetrical surfaces
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/11—Lapping tools
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/11—Lapping tools
  • B24B37/12—Lapping plates for working plane surfaces
  • B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/11—Lapping tools
  • B24B37/20—Lapping pads for working plane surfaces
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/11—Lapping tools
  • B24B37/20—Lapping pads for working plane surfaces
  • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
  • B24B37/245—Pads with fixed abrasives
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/11—Lapping tools
  • B24B37/20—Lapping pads for working plane surfaces
  • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/34—Accessories
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
  • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
  • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
  • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
  • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
  • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
  • B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
  • B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
  • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
  • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
  • B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
  • B24D7/066—Grinding blocks; their mountings or supports
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
  • H01L21/321—After treatment
  • H01L21/32115—Planarisation
  • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67092—Apparatus for mechanical treatment

Definitions

• the present invention relates to a spacer of a pad conditioner for wafer chemical mechanical plananzation system, the pad conditioner with such spacer and the wafer chemical mechanical plananzation system having a pad conditioner with such spacer.
• CMP Chemical mechanical planarization
• Diamond disk pad conditioner is commonly used in CMP process. However, if the diamond grits of the diamond disks are not uniformly embedded, wafer damage will be caused during the CMP operation. To fix such problem, a new type of chemical vapor deposition (CVD) pad conditioner was developed (US publication US20150209932A1 (Duy K Lehuu et. al.), US20150087212A1 (Patrick Doering et. al.), US20160074993A1 (Joseph Smith et. al.), US20160121454A1 (Jun Ho Song et. el.), US20090224370A1 (David E. Slutz), US 20110250826A1 (So Young Yoon et. al.), and US5921856A (Jerry W. Zimmer)).
• CVD chemical vapor deposition
• the CVD pad conditioner Comparing with diamond disk pad conditioner, shows several advantages such as long disk lifetime, low wafer defect rate, low pad wear rate and high disk consistency. But the sweep distance on pad surface of the new type of pad conditioner is less than the diamond disk pad conditioner. In other words, sweep distance of the new type of pad conditioner is restricted to the abrasive element numbers and positions.
• the current invention is to provide a spacer for the CVD pad conditioner applied in chemical mechanical planarization process.
• the pad edge damage (such as roll up) when the pad conditioner spins over the edge of the pad can be avoided.
• the creation of greater depth of penetration and friction near the pad edge caused by the increase of downforce for the elements remaining on the pad due to portions of the pad conditioner sweeping beyond the pad diameter can be mitigated.
• the present invention is a pad conditioner including a carrier, at least one abrasive element, and a spacer.
• the carrier includes a surface with an exposed region and a plurality of mounting regions.
• the abrasive element is disposed on the mounting region of the surface of the carrier, and at least one abrasive element having a working surface includes a plurality of features each having a distal end.
• the spacer is disposed on the surface of the carrier and covering at least a portion of the exposed region, wherein the spacer has a first surface and a second surface opposed to the first surface, and the second surface is adjacent to the surface of the carrier.
• the distance (Dl) between the distal end of the highest feature of the at least one abrasive element and the surface of the carrier is greater than the distance (D2) between the first surface of the spacer and the surface of the carrier.
• the present invention is a spacer being disposed on a pad conditioner which includes a carrier and at least an abrasive element.
• the carrier of the pad conditioner comprises a surface with plural mounting regions and an exposed region.
• the abrasive element is disposed on the mounting region of the surface of the carrier and comprises a plurality of features.
• the spacer includes a first surface and a second surface opposed to each other, wherein the second surface is adjacent to the carrier.
• the distance (Dl) between the distal end of the highest feature of the abrasive element and the surface of the carrier is greater than the distance (D2) between the first surface of the spacer and the surface of the carrier.
• the present invention is a wafer chemical mechanical planarization system includes a platen, a pad disposed on the platen and having an abrasive face, and a pad conditioner.
• the pad conditioner includes a carrier, at least one abrasive element, and a spacer.
• the carrier includes a surface with an exposed region and plurality of mounting regions, and the abrasive element is disposed on the mounting region of the surface of the carrier.
• At least one abrasive element includes a working surface facing the pad and including a plurality of features each having a distal end.
• the spacer is disposed on the surface of the carrier and covering at least a portion of the exposed region, wherein the spacer has a first surface and a second surface opposed to each other, and the second surface is adjacent to the carrier surface.
• the distal end of the highest feature of the abrasive element is in contact with the abrasive face of the pad, and the first surface of the spacer and the abrasive face of the pad have a gap (G)
• Figure 1 is a schematic diagram of the pad conditioner according to one embodiment of the present invention.
• Figure 2 is the a-a' cross-sectional view of Fig. 1.
• Figure 3 is the enlarged view for zone b in Fig. 2.
• Figure 4 is a schematic diagram of the wafer chemical mechanical planarization system according to one embodiment of the present invention.
• Figure 5 is a top view of the pad conditioner according to a second embodiment of the present invention.
• Figure 6 is a top view of the pad conditioner according to a third embodiment of the present invention.
• Figure 7 is a top view of the pad conditioner according to a fourth embodiment of the present invention.
• Figure 8 is a top view of the pad conditioner according to a fifth embodiment of the present invention.
• Figure 9 is a top view of the pad conditioner according to a sixth embodiment of the present invention.
• Figure 10 is a top view of the pad conditioner according to a seventh embodiment of the present invention.
• Figures 11 (a)-(h) are the tilt degree of the disk at different positions for Comparison Example 1.
• Figure 12 (a)-(h) are the tilt degree of the disk at different positions for Example 1.
• Fig. 13 is the comparison of the tilt degree for Comparison Example 1 and Example 1.
• the pad conditioner 1 for chemical mechanical planarization (CMP) process includes a carrier 10, at least one abrasive element 12 and a spacer 14.
• the carrier 10 comprises a surface 101 including an exposed region 103 and plural mounting regions 105.
• the carrier 10 is a circular shape, and the mounting regions 105 are spaced apart in an equal interval around the circumference of the carrier 10.
• the abrasive elements 12 are disposed on the mounting regions 103 of the surface 101 of the carrier 10 via adhesives, but the method for fixing the abrasive elements 12 to the mounting regions 103 of the carrier 10 is not limited.
• the abrasive elements 12 are spaced apart in an equal interval around the circumference of the carrier 10. In this embodiment, there are 5 abrasive elements mounting on the carrier 10, and thus the abrasive elements 12 are spaced apart equally 72 degrees around the circumference of the carrier 10.
• the number of the abrasive elements 12 is not limited, which can be adjusted according to different requirement. Other embodiments may comprise as few as one or as many as 16 abrasive elements.
• At least one of the abrasive elements 12 comprises a working surface 121 with plural features 123 formed thereon.
• each of the abrasive elements 12 has plural features 123 forming on the working surface 121 (Figs. 2 and 3).
• Each of the features 123 has a distal end 125, and the distal end 125 of the highest feature 123 of the abrasive element 12 and the surface 101 of the carrier 10 have a distance Dl therebetween.
• the features 123 are precisely shaped features which can be formed from methods such as machining or micromachining, water jet cutting, injection molding, extrusion, microreplication or ceramic die pressing.
• the shape of the features 123 is not limited to precisely shape, and the shape of the features can be modified according to different abrasive requirement.
• the abrasive elements 12 may comprise the following: a superabrasive grit in a metal matrix, ceramic bodies comprising ceramic material in an amount of at least 85% by weight, and ceramic bodies comprising a diamond coating. Examples of superabrasive grit are cubic boron nitride (CBN) and CVD diamond.
• CBN cubic boron nitride
• CVD diamond The details of the carrier 10 and abrasive elements 12 are discussed in US patent publication US20150209932 Al (Duy K. Lehuu, et. al), which is herein incorporated by reference.
• the pad conditioner 1 comprises a spacer 14.
• the spacer 14 is disposed on the surface 101 of the carrier 10 and covers at least a portion of the exposed region 103.
• the spacer 14 includes a first surface 141 and a second surface 143 opposed to each other, and the second surface 143 of the spacer 14 is adjacent to the surface 101 of the carrier (as shown in Fig. 2).
• the second surface 143 of the spacer 14 can be fixed to the carrier 10 via an adhesive, such as 3MTM VHBTM tape or 3MTM SCOTCH- WELDTM epoxy adhesive, but not limited there to.
• the spacer can be integrated with the carrier.
• the coverage ratio of the spacer 14 to the exposed region 103 of the surface 101 of the carrier 10, may range from 1.7% to 100%.
• the spacer 14 is a 5-lobed shape, which has plural concaves 145 at the peripheral thereof, so as to accommodate the abrasive element 12.
• the shape of the spacer 14 is not limited.
• the spacer 24 may comprise plural openings 241, and each opening 241 is incorporated with one of the abrasive elements 12.
• the periphery of the spacer 24 is substantially aligned with the outer edge of the carrier 10, and thus the covering rate of the spacer 24 to the exposed region 103 of the surface 101 of the carrier 10 is about 100%.
• the spacer 34, 44, 54 is substantially circular shape or ring shape and disposed on the carrier concentrically within the circumference of the carrier 10.
• the spacer 34 is about the same size as the abrasive elements 12 and being disposed at the center of the carrier 10. In other words the center of spacer 34 aligns with the center of the carrier 10.
• the diameter of the carrier 10 is about 107.95 mm and the diameter of the abrasive element 12 is about 13.6mm, therefore, the coverage ratio of the spacer 34 to the exposed region 103 of the carrier 10 is approximately 1.7%.
• the spacer can be a ring shape.
• the spacer 44 is a circular ring shape and being disposed on the carrier 10 concentrically within the circumference of the carrier 10.
• the abrasive elements 12 are disposed within the inner edge of the spacer 44, and the outer edge of the spacer is within the circumference of the carrier 10.
• the size of the ring is not limited, for example, as shown in Fig. 8, the circular ring shaped spacer 54 is smaller than that of Fig. 7, wherein the diameter of the outer edge of the spacer 54 is less than the diameter of the circle where the abrasive elements are arranged.
• the spacer 64, 74 includes a plurality of ribs 641, 741.
• the spacer 64 comprises plural ribs 641, and each of the rib 641, 741 is spaced in an equal interval around the circumference of the carrier 10, and one abrasive element 12 is disposed between the adjacent two ribs 641.
• the ribs 641 are arranged as radial shape.
• the shape of the rib is not limited, for example, which can be rectangular shape (as shown in Fig. 9) or triangle (as shown in Fig. 10).
• the ribs 641 can be separated from each other (as shown in Fig. 9) or in contact with each other (as shown in Fig. 10).
• the coverage ratio of the spacer to the exposed region of the surface of the carrier is ranged from 1.7% to 100%.
• the spacer 14 further comprises an inclined edge 147, and the angle Abetween the inclined edge 147 and the surface 101 of the carrier 10 is ranged from 10 to 80 degrees. In another embodiment, the angle A is ranged between 30 to 60 degrees. In the other embodiment, the angle A is approximately 45 degrees.
• the spacer 14 has a thickness, in other words, there is a distance D2 between the first surface 141 and the surface 101 of the carrier 10 when the spacer 14 is disposed on the surface 101 of the carrier 10. The distance D2 is approximately ranged from 2.9 mm to 3.5 mm.
• the distance D2 between the first surface 141 of the spacer 14 and the surface 101 of carrier 10 is less than the distance Dl between the distal end 125 of the highest feature 123 on the working surface 121 of the abrasive element 12.
• the differences between distances Dl and D2 is ranged between 0.2 mm to 0.7mm.
• the differences between distances Dl and D2 can be 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, or any of the number between 0.2mm to 0.7mm.
• the spacer 14 can be made of materials that is durable to various kind of slurry used in the CMP process and that will not interact with the slurry, the pad, or the pad conditioner itself.
• the material of the spacer 14 can be selected from a polymer such as polyethylene (PE), polypropylene (PP), poly Styrene (PS), poly(vinyl chloride) (PVC), acrylonitrile butadine styrene (ABS), polymethylmethacrylate (PMMA), polyamide (PA), polyoxy methylene (POM), poly(butylene terephthalate) (PBT), polycarbonate (PC), poly(phenylene oxide) (PPO), polyphenylene sulfide (PPS), poly(propylene imine) (PI), liquid crystal plastic (LCP), poly (tetrafluoroethylene) (PTFE), poly(ether-ether-ketone) (PEEK), polycyclic aromatic resin (PAR), polysufone (PSF), polyether
• PE
• the material of the spacer 14 can comprise ceramic such as sapphire or glass.
• the spacer may be a brush material such as BRUSHLON products from 3M Company, USA.
• the downward force when polishing the pad may be about 4-10 pounds, and may be as high as 15 pounds. Therefore, thus the hardness of the spacer 14 is preferably high enough to withstand these forces, to provide a support function and to avoid the unbalance of the pad conditioner if the pad conditioner sweeps beyond the pad diameter.
• the pad conditioner 1 with spacer can be applied in the wafer chemical mechanical planarization (CMP) system.
• the wafer chemical mechanical planarization system 8 comprises a platen 81, a pad 82, and a pad conditioner 1.
• the pad 82 is disposed on the platen 80 and includes an abrasive face 821.
• the pad conditioner 1 is similar to that in Fig. 1, which is not redundantly described here.
• the surface 101 of the carrier 10 faces the abrasive face 821 of the pad 82, the surface 101 is substantially parallel to the abrasive face 821.
• the features 123 of the abrasive element 12 is in contact with the abrasive face 821 of the pad 82 to condition the abrasive surface 821.
• the distal end 125 of the highest feature 123 of the abrasive element 12 and the abrasive face 821 of the pad 82 has a gap G therebetween, in some embodiments, the gap G is greater than or equal to 0.2mm but no greater than 0.7mm.
• the gap G can be 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, or any of the number between 0.2mm to 0.7mm.
• the spacer 14 of the pad conditioner 1 can support the pad conditioner 1 and keep the balance of the pad conditioner 1 to mitigate the tilt of the pad conditioner 1 with respect to the pad 82. Therefore, rocking and gouging of the edge of the pad 82 cased due to the oscillation can be moderated.
• the pad conditioner 1 sweeps back to the center of the pad 82, the inclined edge 147 of the spacer 14 can prevent the pad 82 edge damage.
• Pad conditioners of the present invention are also able to condition the edges of the pad so that the CMP performance (e.g., material removal rate) is uniform across the wafer surface.
• Comparative Example 1 A TRIZACT B25-2910-5S2 disk (from 3M Company, St. Paul, MN, US) was placed on an AMAT REFLEXION tool (from Applied Materials, Inc., Santa Clara, CA, US). This disk had no spacer.
• the pad was a JSR CMP 9006-FPJ pad (from JSR Corporation, Tokyo, JP). The disk was positioned near the edge of the pad (outer radial sweep position) (step 1), and then the disk was lowered until it was in contact at 6 lbs down force (step 2).
• a photograph of the disk was taken to document the tilt (step 3). Raised the disk off the pad and increment the disk position outwards to document the tilt (Step 4). Steps 3 and 4 were repeated to document the tilt.
• Example 1 The disk, tool and pad were the same as those in comparative Example 1, except that a spacer of the present invention was attached to the disk via VHB tape (from 3M Company, St. Paul, MN US).
• the spacer was a 5-lobed shaped spacer made of PMMA.
• the thickness of the spacer was 3mm, and the chord length of each arc was 47.2 mm. Steps 3 and 4 as described above for Comparative Example 1 were repeated to record the tilt.

Landscapes

• Engineering & Computer Science (AREA)
• Mechanical Engineering (AREA)
• Manufacturing & Machinery (AREA)
• Microelectronics & Electronic Packaging (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Chemical & Material Sciences (AREA)
• Ceramic Engineering (AREA)
• Inorganic Chemistry (AREA)
• Mechanical Treatment Of Semiconductor (AREA)
• Grinding-Machine Dressing And Accessory Apparatuses (AREA)
• Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Priority Applications (3)

Applications Claiming Priority (2)

Publications (1)

Family

ID=62626270

Family Applications (1)

Country Status (5)

Families Citing this family (4)

Citations (11)

Family Cites Families (15)

• 2017
  • 2017-12-18 WO PCT/IB2017/058053 patent/WO2018116122A1/en not_active Ceased
  • 2017-12-18 JP JP2019533320A patent/JP7232763B2/ja active Active
  • 2017-12-18 CN CN201780078805.XA patent/CN110087809B/zh active Active
  • 2017-12-18 US US16/470,571 patent/US20190337119A1/en active Pending
  • 2017-12-20 TW TW106144802A patent/TWI813551B/zh active

Patent Citations (11)

Also Published As

Similar Documents

Legal Events