WO2018098952A1 - Gan-based epitaxial structure, semiconductor device and formation method therefor - Google Patents

Gan-based epitaxial structure, semiconductor device and formation method therefor Download PDF

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WO2018098952A1
WO2018098952A1 PCT/CN2017/078826 CN2017078826W WO2018098952A1 WO 2018098952 A1 WO2018098952 A1 WO 2018098952A1 CN 2017078826 W CN2017078826 W CN 2017078826W WO 2018098952 A1 WO2018098952 A1 WO 2018098952A1
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layer
gallium nitride
concentration
nitride layer
gan
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PCT/CN2017/078826
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French (fr)
Chinese (zh)
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陈龙
李成
袁理
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上海新微技术研发中心有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

Definitions

  • the present application relates to the field of semiconductor technology, and in particular, to a gallium nitride based epitaxial structure, a semiconductor device, and a method of forming the same.
  • GaN-based heterostructure field-effect transistors are considered to be the next generation of semiconductor devices, especially in high-power and high-frequency applications.
  • the main advantages of GaN-based heterostructure field-effect transistors come from the superior material properties of GaN materials themselves (compared to traditional semiconductor materials such as Si, Ge, etc.), such as excellent thermodynamic and chemical stability, high breakdown electric field, and poles.
  • Two-dimensional electron gas (2DEG) which is produced at the AlGaN/GaN hetero interface, has both a very high carrier concentration and a high mobility.
  • GaN Unintentionally doped GaN exhibits n-type conductivity due to N atom vacancies and background O atoms, which hinders the device's insulating properties.
  • good electrical isolation performance can reduce the off-leakage current, resulting in good channel pinch-off performance and high breakdown voltage. Therefore, semi-insulating GaN materials are very important in the fabrication of GaN-based heterostructure field effect transistors.
  • semi-insulating GaN materials compensate for background donors by intentionally introducing acceptor states.
  • Several common approaches include: one is to change the growth conditions to introduce intrinsic defects, such as edge dislocations or other dislocations, to form a self-compensating effect; the other is to externally incorporate deep-level doping atoms in GaN, For example, iron (Fe) or carbon (C) atoms act as deep level acceptors.
  • C doped GaN has better stability and lower memory effect, and its turn-off breakdown voltage is also better.
  • MOCVD metal organic chemical vapor deposition
  • an intrinsic GaN channel layer is usually epitaxially grown on the C-doped GaN buffer layer to form a structure of AlGaN/GaN channel/high resistivity c-GaN, two-dimensional electrons. Gas is formed at the AlGaN/uGaN interface, which achieves high electrical isolation performance through c-GaN and intrinsic uGaN as a conduction channel, avoiding a series of problems caused by C doping.
  • Patent Document 1 (US 20140209920A1, High Electron Mobility Transistor Structure) describes the structure of a typical GaN-based heterostructure field effect transistor: a first breakdown voltage GaN layer / a second breakdown voltage GaN layer / Other buffer layers, wherein the first breakdown voltage GaN layer has a C doping less than 1 ⁇ 10 17 CM ⁇ 3 , and the second breakdown voltage GaN layer has a C doping greater than 5 ⁇ 10 18 CM ⁇ 3 .
  • C atoms in C-doped GaN are easily diffused into the GaN channel, and C if it is incorporated into the GaN channel causes a series of problems as described above.
  • the doping concentration of C in C-doped GaN may even reach 1 ⁇ 10 19 CM -3 or more, and it is inevitable to introduce a certain C doping into the GaN channel.
  • the C doping concentration must be the highest at the interface, and as the thickness of the GaN channel increases, so increasing the thickness of the GaN channel can solve this problem to some extent, but at the same time inevitably bring other undesirable effects. For example, the stress balance of each layer is destroyed, resulting in fragile wafers and the like.
  • the present application provides a gallium nitride based epitaxial structure, a semiconductor device, and a method of forming the same by disposing a carbon atom doping barrier between a highly doped first gallium nitride layer and a low doped second gallium nitride layer a layer that blocks carbon atoms from diffusing between the first gallium nitride layer and the second gallium nitride layer, can realize a highly C-doped high-resistance GaN layer for buffering, and can obtain a C impurity concentration and a thickness The smaller intrinsic GaN layer used to create the channel.
  • a gallium nitride (GaN)-based epitaxial structure wherein the epitaxial structure comprises:
  • a carbon atom doped barrier layer between the first gallium nitride layer and the second gallium nitride layer for blocking carbon atoms in the first gallium nitride layer and the second nitride Diffusion between gallium layers.
  • the carbon atom doped barrier layer is a GaN layer, an AlN layer, an Al y Ga 1-y N layer, an In x Ga 1-x N layer, and an In x Al y Ga 1 at least one layer -xy N, where, 0 ⁇ x ⁇ 1,0 ⁇ y ⁇ 1.
  • the carbon atom doped barrier layer is composed of at least two layers of a GaN layer, an AlN layer, an Al y Ga 1-y N layer, and an In x Ga 1-x N layer.
  • the first gallium nitride layer has a thickness of 0.5 ⁇ m to 4 ⁇ m
  • the second gallium nitride layer has a thickness of 100 nm to 500 nm.
  • the first concentration is greater than 5 x 10 18 CM -3 and the second concentration is less than 1 x 10 17 CM -3 .
  • a semiconductor device characterized in that the semiconductor device comprises:
  • An active layer on a surface of the second gallium nitride layer of the gallium nitride-based epitaxial structure is an active layer on a surface of the second gallium nitride layer of the gallium nitride-based epitaxial structure.
  • the active layer is Al Z Ga 1-Z N, wherein 0.2 ⁇ Z ⁇ 0.5.
  • a method for forming a gallium nitride (GaN)-based epitaxial structure comprising:
  • the carbon atom doped barrier layer is used to block diffusion of carbon atoms between the first gallium nitride layer and the second gallium nitride layer.
  • the forming the second gallium nitride layer The temperature of the substrate is higher than the temperature of the substrate when the first gallium nitride layer is formed.
  • a method of forming a semiconductor device characterized in that the forming method comprises:
  • first gallium nitride layer on the surface of the buffer layer, which is doped with a first concentration of carbon (C) atoms;
  • the carbon atom doped barrier layer is for blocking carbon atoms between the first gallium nitride layer and the second gallium nitride layer diffusion.
  • the beneficial effects of the present application are: a highly resistive GaN layer for buffering capable of achieving extremely C doping, while at the same time being able to obtain an intrinsic GaN layer for generating a channel with a lower C impurity concentration and a smaller thickness.
  • FIG. 1 is a schematic view of a gallium nitride based epitaxial structure in an embodiment of the present application
  • FIG. 2 is a schematic diagram of a semiconductor device in an embodiment of the present application.
  • Embodiment 1 of the present application provides a gallium nitride (GaN) based epitaxial structure.
  • GaN gallium nitride
  • the gallium nitride based epitaxial structure includes:
  • a carbon atom-doped barrier layer is disposed between the highly doped first gallium nitride layer and the low-doped second gallium nitride layer to block carbon atoms in the first gallium nitride
  • the diffusion between the layer and the second gallium nitride layer enables a high-resistance first GaN layer to be obtained while obtaining an intrinsic second GaN layer having a lower C impurity concentration and a smaller thickness.
  • the carbon atom doped barrier layer 300 may be a single layer structure, for example, may be a GaN layer, an AlN layer, an Al y Ga 1-y N layer, an In x Ga 1-x N layer, and an In x Al At least one of y Ga 1-xy N, where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1. Further, the thickness of the single layer may be from 1 nm to 15 nm.
  • the carbon atom doped barrier layer 300 may be a multilayer structure, for example, may be at least two of a GaN layer, an AlN layer, an Al y Ga 1-y N layer, and an In x Ga 1-x N layer.
  • the multilayer structure may be AlGaN/GaN/AlGaN/GaN or the like.
  • the first gallium nitride layer 100 may have a thickness of 0.5 micrometers to 4 micrometers
  • the second gallium nitride layer 200 may have a thickness of 100 nanometers to 500 nanometers.
  • the first concentration of carbon atoms in the first gallium nitride layer 100 may be greater than 5 ⁇ 10 18 CM ⁇ 3
  • the second concentration of carbon atoms in the second gallium nitride layer 200 may be less than 1 ⁇ 10 17 . CM -3.
  • Embodiment 1 of the present application further provides a semiconductor device including the above-described gallium nitride-based epitaxial structure.
  • the semiconductor device includes:
  • the substrate 400 may be a foreign substrate.
  • the buffer layer 500 may be an AlN buffer layer, an AlGaN buffer layer, or an AlN/AlGaN buffer layer.
  • the active layer 600 is Al Z Ga 1-Z N, where 0.2 ⁇ Z ⁇ 0.5.
  • a channel may be formed at the interface between the active layer 600 and the second gallium nitride layer 200. Therefore, the second gallium nitride layer 200 may be referred to as a channel layer.
  • Embodiment 1 of the present application also provides a method for forming a gallium nitride (GaN)-based epitaxial structure for forming the gallium nitride-based epitaxial structure shown in FIG.
  • GaN gallium nitride
  • the method for forming the gallium nitride (GaN)-based epitaxial structure includes:
  • Step 101 forming a first gallium nitride layer 100 on the surface of the substrate, which is doped with a first concentration of carbon (C) atoms;
  • Step 102 forming a carbon atom doped barrier layer 300 on the surface of the first gallium nitride layer 100;
  • Step 103 forming a second gallium nitride layer 200 on the surface of the carbon atom doped barrier layer 300, which is doped with a second concentration of carbon (C) atoms, and the second concentration is less than the first concentration, wherein
  • the carbon atom doped barrier layer serves to block diffusion of carbon atoms between the first gallium nitride layer and the second gallium nitride layer.
  • the temperature of the substrate when the second gallium nitride layer 200 is formed may be higher than the temperature of the substrate when the first gallium nitride layer 100 is formed.
  • the specific implementation of step 101 may be, for example, the substrate is a heterogeneous substrate, and the reactor is an MOCVD reactor.
  • the synthesis gas source is TMGa and NH 3 .
  • the surface temperature of the substrate in the reaction chamber is ⁇ 970 ° C.
  • the C atom doping source is formed by TMGa splitting, and the gas pressure in the reaction chamber is less than 100 mbar, thereby forming an insulating or semi-insulating carbon doped first gallium nitride layer 100.
  • step 103 may be, for example, when the second gallium nitride layer 200 is formed, the substrate surface temperature is > 970 ° C, and the gas pressure is greater than 150 mbar to ensure lower TMGa splitting and lower formation.
  • the C is doped, thereby forming an intrinsically doped or unintentionally doped second gallium nitride layer 200.
  • Embodiment 1 of the present application also provides a method of forming a semiconductor device for forming the semiconductor device shown in FIG. 2.
  • the method of forming the semiconductor device includes:
  • Step 201 forming a buffer layer 500 on the surface of the substrate 400;
  • Step 202 forming a first gallium nitride layer 100 on the surface of the buffer layer 500, which is doped with a first concentration of carbon (C) atoms;
  • Step 203 forming a carbon atom doped barrier layer 300 on the surface of the first gallium nitride layer 100;
  • Step 204 forming a second gallium nitride layer 200 on the surface of the carbon atom doped barrier layer 300 doped with a second concentration of carbon (C) atoms, the second concentration being less than the first concentration;
  • Step 205 forming an active layer 600 on the surface of the second gallium nitride layer 200, wherein the carbon atom doped barrier layer 300 is used to block carbon atoms between the first gallium nitride layer 100 and the second gallium nitride layer 200. diffusion.
  • step 201 may be, for example, the substrate is a heterogeneous substrate, and the reactor is an MOCVD reactor.
  • the specific implementation manner of step 202 may be: In a gallium nitride layer 100, the synthesis gas source is TMGa and NH3, the surface temperature of the substrate in the reaction chamber is ⁇ 970 ° C, the C atom doping source is formed by TMGa splitting, and the gas pressure is less than 100 mbar, thereby forming the first gallium nitride layer. 100.
  • step 204 may be, for example, when the second gallium nitride layer 200 is formed, the substrate surface temperature is > 970 ° C, and the gas pressure is greater than 150 mbar to ensure a lower TMGa splitting, which is extremely low.
  • the C is doped, thereby forming an intrinsic doped or unintentionally doped second gallium nitride layer 200.
  • the steps 203 and 205 can be implemented by using the methods in the prior art, which is not described in this embodiment.
  • the carbon atom doped barrier layer 300 can effectively block the diffusion of C atom doping by utilizing the interface adsorption effect, and can realize low C doping and thickness on the extremely high C doped first gallium nitride layer 100.
  • the second second gallium nitride layer 200 can solve a series of problems such as current collapse caused by C doping in the GaN HEMT, and avoids the stress imbalance caused by the excessive thickness of the GaN channel layer, and the wafer is easy to be Broken and other issues.

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Abstract

A GaN-based epitaxial structure, a semiconductor device, and a formation method therefor, the GaN-based epitaxial structure comprising: a first GaN layer (100), which is doped with C atoms at a first concentration; a second GaN layer (200), which is doped with C atoms at a second concentration, the second concentration being lower than the first concentration; and a C atom-doping blocking layer (300), which is disposed between the first GaN layer (100) and the second GaN layer (200), and which is configured to block C atoms from diffusing between the first GaN layer (100) and the second GaN layer (200). The present method may achieve a greatly C-doped high impedance GaN layer that is used for buffering, and at the same time, may obtain a low C-doped eigen GaN layer having a small thickness that is used for generating channels.

Description

氮化镓基外延结构、半导体器件及其形成方法Gallium nitride based epitaxial structure, semiconductor device and method of forming same 技术领域Technical field
本申请涉及半导体技术领域，尤其涉及一种氮化镓基外延结构、半导体器件及其形成方法。The present application relates to the field of semiconductor technology, and in particular, to a gallium nitride based epitaxial structure, a semiconductor device, and a method of forming the same.
背景技术Background technique
氮化镓(GaN)基异质结构场效应晶体管(field-effect transistors,HFETs)被认为是下一代半导体器件，尤其在高功率和高频应用领域正受到广泛关注。GaN基异质结构场效应晶体管的主要优势，来自于GaN材料本身的优越材料特性(相比传统Si、Ge等传统半导体材料)，例如极佳的热力学和化学稳定性、高击穿电场、极化诱导的二维电子气(two-dimensional electron gas，2DEG，产生于AlGaN/GaN异质界面，既具有极高的载流子浓度又具备很高的迁移率)。Gallium nitride (GaN)-based heterostructure field-effect transistors (HFETs) are considered to be the next generation of semiconductor devices, especially in high-power and high-frequency applications. The main advantages of GaN-based heterostructure field-effect transistors come from the superior material properties of GaN materials themselves (compared to traditional semiconductor materials such as Si, Ge, etc.), such as excellent thermodynamic and chemical stability, high breakdown electric field, and poles. Two-dimensional electron gas (2DEG), which is produced at the AlGaN/GaN hetero interface, has both a very high carrier concentration and a high mobility.
非故意掺杂的GaN由于N原子空位和背景O原子，都呈现为n型导电特性，这就阻碍器件的绝缘性能。在功率器件领域，良好的电学隔离性能可以减小截止漏电流，形成良好的沟道夹断性能和高击穿电压。因此，半绝缘的GaN材料在GaN基异质结构场效应晶体管制造中非常重要。通常，半绝缘的GaN材料通过故意引入受主态来补偿背景施主。常见的几种途径包括：一种是改变生长条件来引入本征缺陷，例如刃位错或其他位错，形成自我补偿效应；另一种是在GaN中外部掺入深能级掺杂原子，例如铁(Fe)或碳(C)原子，作为深能级受主。 Unintentionally doped GaN exhibits n-type conductivity due to N atom vacancies and background O atoms, which hinders the device's insulating properties. In the field of power devices, good electrical isolation performance can reduce the off-leakage current, resulting in good channel pinch-off performance and high breakdown voltage. Therefore, semi-insulating GaN materials are very important in the fabrication of GaN-based heterostructure field effect transistors. Typically, semi-insulating GaN materials compensate for background donors by intentionally introducing acceptor states. Several common approaches include: one is to change the growth conditions to introduce intrinsic defects, such as edge dislocations or other dislocations, to form a self-compensating effect; the other is to externally incorporate deep-level doping atoms in GaN, For example, iron (Fe) or carbon (C) atoms act as deep level acceptors.
然而，采用本征位错技术会导致比较差的器件可靠性，而且高压下本征位错会俘获电荷从而造成电流崩塌效应。采用Fe掺杂的GaN缓冲层则受限于很强的记忆效应，而且掺杂范围不能太大，其Fe掺杂的GaN绝缘性也较差，如果用高Fe掺杂，则同样也会造成电流崩塌效应。碳(C)掺杂的GaN则具有比较好的稳定性和更低记忆效应，而且其关断击穿电压也更好。但是，金属有机物化学气相沉积(MOCVD)生长的C掺杂GaN的生长温度低，因此，晶体质量较差。C掺杂引起的缺陷则会导致器件可靠性的衰退和电流崩塌效应。However, the use of intrinsic dislocation techniques results in poor device reliability, and the intrinsic dislocations at high voltages trap charge and cause current collapse effects. The Fe-doped GaN buffer layer is limited by a strong memory effect, and the doping range is not too large, and the Fe-doped GaN is also insulative, and if it is doped with high Fe, it will also cause Current collapse effect. Carbon (C) doped GaN has better stability and lower memory effect, and its turn-off breakdown voltage is also better. However, the growth temperature of C-doped GaN grown by metal organic chemical vapor deposition (MOCVD) is low, and therefore, the crystal quality is poor. Defects caused by C doping can lead to degradation of device reliability and current collapse effects.
为了克服上述C掺杂引起的相关问题，通常都会在C掺杂GaN缓冲层上再外延一层本征的GaN沟道层，形成AlGaN/GaN channel/high resistivity c-GaN的结构，二维电子气在AlGaN/uGaN界面形成，这样既通过c-GaN实现了较高的电学隔离性能，又利用本征uGaN作为导通沟道，避免了C掺杂引起的一系列问题。In order to overcome the related problems caused by the above C doping, an intrinsic GaN channel layer is usually epitaxially grown on the C-doped GaN buffer layer to form a structure of AlGaN/GaN channel/high resistivity c-GaN, two-dimensional electrons. Gas is formed at the AlGaN/uGaN interface, which achieves high electrical isolation performance through c-GaN and intrinsic uGaN as a conduction channel, avoiding a series of problems caused by C doping.
专利文件1(US 20140209920A1，High Electron Mobility Transistor Structure)描述了一种典型的GaN基异质结构场效应晶体管的结构：第一击穿电压GaN层(GaN channel)/第二击穿电压GaN层/其他缓冲层，其中第一击穿电压GaN层其C掺杂小于1×1017CM-3，第二击穿电压GaN层其C掺杂大于5×1018CM-3。Patent Document 1 (US 20140209920A1, High Electron Mobility Transistor Structure) describes the structure of a typical GaN-based heterostructure field effect transistor: a first breakdown voltage GaN layer / a second breakdown voltage GaN layer / Other buffer layers, wherein the first breakdown voltage GaN layer has a C doping less than 1×10 17 CM −3 , and the second breakdown voltage GaN layer has a C doping greater than 5×10 18 CM −3 .
应该注意，上面对技术背景的介绍只是为了方便对本申请的技术方案进行清楚、完整的说明，并方便本领域技术人员的理解而阐述的。不能仅仅因为这些方案在本申请的背景技术部分进行了阐述而认为上述技术方案为本领域技术人员所公知。It should be noted that the above description of the technical background is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application, and is convenient for understanding by those skilled in the art. The above technical solutions are not considered to be well known to those skilled in the art simply because these aspects are set forth in the background section of this application.
申请内容Application content
本申请的发明人发现，上述专利文件1的结构存在如下问题： The inventors of the present application found that the structure of the above Patent Document 1 has the following problems:
由于存在较大的浓度梯度差，C掺杂GaN中的C原子容易扩散到GaN channel中，而C如果掺入GaN channel中就会引起上述的一系列问题。但是，为了获得更高的击穿电压，C掺杂GaN中C的掺杂浓度甚至会达到1×1019CM-3以上，不可避免的在GaN channel中引入一定C掺杂。C掺杂浓度一定是在界面处最高，而随着GaN channel厚度增大减小的，所以，增大GaN channel厚度可以在一定程度上解决这个问题，但是同时不可避免的带来其他不良效果，例如破坏了每层应力平衡，导致晶圆易碎等。Due to the large concentration gradient difference, C atoms in C-doped GaN are easily diffused into the GaN channel, and C if it is incorporated into the GaN channel causes a series of problems as described above. However, in order to obtain a higher breakdown voltage, the doping concentration of C in C-doped GaN may even reach 1×10 19 CM -3 or more, and it is inevitable to introduce a certain C doping into the GaN channel. The C doping concentration must be the highest at the interface, and as the thickness of the GaN channel increases, so increasing the thickness of the GaN channel can solve this problem to some extent, but at the same time inevitably bring other undesirable effects. For example, the stress balance of each layer is destroyed, resulting in fragile wafers and the like.
本申请提供一种氮化镓基外延结构、半导体器件及其形成方法，通过在高掺杂的第一氮化镓层和低掺杂的第二氮化镓层之间设置碳原子掺杂阻挡层，阻挡碳原子在第一氮化镓层和第二氮化镓层之间扩散，能够实现极大C掺杂的用于缓冲的高阻GaN层，同时能够获得C杂质浓度较低且厚度较小的用于产生沟道的本征GaN层。The present application provides a gallium nitride based epitaxial structure, a semiconductor device, and a method of forming the same by disposing a carbon atom doping barrier between a highly doped first gallium nitride layer and a low doped second gallium nitride layer a layer that blocks carbon atoms from diffusing between the first gallium nitride layer and the second gallium nitride layer, can realize a highly C-doped high-resistance GaN layer for buffering, and can obtain a C impurity concentration and a thickness The smaller intrinsic GaN layer used to create the channel.
根据本申请实施例的一个方面，提供一种氮化镓(GaN)基外延结构，其特征在于，该外延结构包括：According to an aspect of the embodiments of the present application, a gallium nitride (GaN)-based epitaxial structure is provided, wherein the epitaxial structure comprises:
第一氮化镓层，其掺杂有第一浓度的碳(C)原子；a first gallium nitride layer doped with a first concentration of carbon (C) atoms;
第二氮化镓层，其掺杂有第二浓度的碳(C)原子，所述第二浓度小于所述第一浓度；以及a second gallium nitride layer doped with a second concentration of carbon (C) atoms, the second concentration being less than the first concentration;
碳原子掺杂阻挡层，其位于所述第一氮化镓层和所述第二氮化镓层之间，用于阻挡碳原子在所述第一氮化镓层和所述第二氮化镓层之间扩散。a carbon atom doped barrier layer between the first gallium nitride layer and the second gallium nitride layer for blocking carbon atoms in the first gallium nitride layer and the second nitride Diffusion between gallium layers.
根据本申请实施例的一个方面，其中，所述碳原子掺杂阻挡层为GaN层、AlN层、AlyGa1-yN层、InxGa1-xN层和InxAlyGa1-x-yN中的至少一层，其中，0<x<1，0<y<1。According to an aspect of the embodiments of the present application, the carbon atom doped barrier layer is a GaN layer, an AlN layer, an Al y Ga 1-y N layer, an In x Ga 1-x N layer, and an In x Al y Ga 1 at least one layer -xy N, where, 0 <x <1,0 <y <1.
根据本申请实施例的一个方面，其中，所述碳原子掺杂阻挡层为 GaN层、AlN层、AlyGa1-yN层和InxGa1-xN层中的至少两层组成的周期性结构，其中，所述周期性结构中的周期数大于2且小于10。According to an aspect of the embodiments of the present application, the carbon atom doped barrier layer is composed of at least two layers of a GaN layer, an AlN layer, an Al y Ga 1-y N layer, and an In x Ga 1-x N layer. A periodic structure in which the number of cycles in the periodic structure is greater than 2 and less than 10.
根据本申请实施例的一个方面，其中，所述第一氮化镓层的厚度为0.5微米-4微米，所述第二氮化镓层的厚度为100纳米-500纳米。According to an aspect of the embodiments of the present application, the first gallium nitride layer has a thickness of 0.5 μm to 4 μm, and the second gallium nitride layer has a thickness of 100 nm to 500 nm.
根据本申请实施例的一个方面，其中，所述第一浓度大于5×1018CM-3，所述第二浓度小于1×1017CM-3。According to an aspect of the embodiments of the present application, wherein the first concentration is greater than 5 x 10 18 CM -3 and the second concentration is less than 1 x 10 17 CM -3 .
根据本申请实施例的一个方面，提供一种半导体器件，其特征在于，该半导体器件包括：According to an aspect of an embodiment of the present application, a semiconductor device is provided, characterized in that the semiconductor device comprises:
衬底；Substrate
位于所述衬底表面的缓冲层；a buffer layer on a surface of the substrate;
位于所述缓冲层表面的如权利要求1-5中任一项所述的氮化镓基外延结构；以及a gallium nitride-based epitaxial structure according to any one of claims 1 to 5, located on the surface of the buffer layer;
位于所述氮化镓基外延结构的所述第二氮化镓层表面的有源层。An active layer on a surface of the second gallium nitride layer of the gallium nitride-based epitaxial structure.
根据本申请实施例的一个方面，其中，所述有源层为AlZGa1-ZN，其中，0.2<Z<0.5。According to an aspect of the embodiments of the present application, the active layer is Al Z Ga 1-Z N, wherein 0.2 < Z < 0.5.
根据本申请实施例的一个方面，提供一种氮化镓(GaN)基外延结构的形成方法，其特征在于，该形成方法包括：According to an aspect of the embodiments of the present application, a method for forming a gallium nitride (GaN)-based epitaxial structure is provided, wherein the forming method comprises:
在衬底表面形成第一氮化镓层，其掺杂有第一浓度的碳(C)原子；Forming a first gallium nitride layer on the surface of the substrate doped with a first concentration of carbon (C) atoms;
在所述第一氮化镓层表面形成碳原子掺杂阻挡层；以及Forming a carbon atom doped barrier layer on a surface of the first gallium nitride layer;
在所述碳原子掺杂阻挡层表面形成第二氮化镓层，其掺杂有第二浓度的碳(C)原子，所述第二浓度小于所述第一浓度；Forming a second gallium nitride layer on the surface of the carbon atom doped barrier layer doped with a second concentration of carbon (C) atoms, the second concentration being less than the first concentration;
其中，所述碳原子掺杂阻挡层用于阻挡碳原子在所述第一氮化镓层和所述第二氮化镓层之间扩散。Wherein the carbon atom doped barrier layer is used to block diffusion of carbon atoms between the first gallium nitride layer and the second gallium nitride layer.
根据本申请实施例的一个方面，其中，形成所述第二氮化镓层时 所述衬底的温度高于形成所述第一氮化镓层时所述衬底的温度。According to an aspect of the embodiments of the present application, wherein the forming the second gallium nitride layer The temperature of the substrate is higher than the temperature of the substrate when the first gallium nitride layer is formed.
根据本申请实施例的一个方面，提供一种半导体器件的形成方法，其特征在于，该形成方法包括：According to an aspect of the embodiments of the present application, a method of forming a semiconductor device is provided, characterized in that the forming method comprises:
在衬底表面形成缓冲层；Forming a buffer layer on the surface of the substrate;
在所述缓冲层表面形成第一氮化镓层，其掺杂有第一浓度的碳(C)原子；Forming a first gallium nitride layer on the surface of the buffer layer, which is doped with a first concentration of carbon (C) atoms;
在所述第一氮化镓层表面形成碳原子掺杂阻挡层；以及Forming a carbon atom doped barrier layer on a surface of the first gallium nitride layer;
在所述碳原子掺杂阻挡层表面形成第二氮化镓层，其掺杂有第二浓度的碳(C)原子，所述第二浓度小于所述第一浓度；以及Forming a second gallium nitride layer on the surface of the carbon atom doped barrier layer doped with a second concentration of carbon (C) atoms, the second concentration being less than the first concentration;
在所述第二氮化镓层表面形成有源层，其中，所述碳原子掺杂阻挡层用于阻挡碳原子在所述第一氮化镓层和所述第二氮化镓层之间扩散。Forming an active layer on a surface of the second gallium nitride layer, wherein the carbon atom doped barrier layer is for blocking carbon atoms between the first gallium nitride layer and the second gallium nitride layer diffusion.
本申请的有益效果在于：能够实现极大C掺杂的用于缓冲的高阻GaN层，同时能够获得C杂质浓度较低且厚度较小的用于产生沟道的本征GaN层。The beneficial effects of the present application are: a highly resistive GaN layer for buffering capable of achieving extremely C doping, while at the same time being able to obtain an intrinsic GaN layer for generating a channel with a lower C impurity concentration and a smaller thickness.
参照后文的说明和附图，详细公开了本申请的特定实施方式，指明了本申请的原理可以被采用的方式。应该理解，本申请的实施方式在范围上并不因而受到限制。在所附权利要求的精神和条款的范围内，本申请的实施方式包括许多改变、修改和等同。Specific embodiments of the present application are disclosed in detail with reference to the following description and accompanying drawings, in which <RTIgt; It should be understood that the embodiments of the present application are not limited in scope. The embodiments of the present application include many variations, modifications, and equivalents within the scope of the appended claims.
针对一种实施方式描述和/或示出的特征可以以相同或类似的方式在一个或更多个其它实施方式中使用，与其它实施方式中的特征相组合，或替代其它实施方式中的特征。Features described and/or illustrated with respect to one embodiment may be used in one or more other embodiments in the same or similar manner, in combination with, or in place of, features in other embodiments. .
应该强调，术语“包括/包含”在本文使用时指特征、整件、步骤或组件的存在，但并不排除一个或更多个其它特征、整件、步骤或组 件的存在或附加。It should be emphasized that the term "includes/comprises" when used herein refers to the presence of features, integers, steps or components, but does not exclude one or more other features, integers, steps or groups The presence or addition of a piece.
附图说明DRAWINGS
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：The drawings are included to provide a further understanding of the embodiments of the present application, and are intended to illustrate the embodiments of the present application Obviously, the drawings in the following description are only some of the embodiments of the present application, and those skilled in the art can obtain other drawings according to the drawings without any inventive labor. In the drawing:
图1是本申请实施例中氮化镓基外延结构的一个示意图；1 is a schematic view of a gallium nitride based epitaxial structure in an embodiment of the present application;
图2是本申请实施例中半导体器件的一个示意图。2 is a schematic diagram of a semiconductor device in an embodiment of the present application.
具体实施方式detailed description
参照附图，通过下面的说明书，本申请的前述以及其它特征将变得明显。在说明书和附图中，具体公开了本申请的特定实施方式，其表明了其中可以采用本申请的原则的部分实施方式，应了解的是，本申请不限于所描述的实施方式，相反，本申请包括落入所附权利要求的范围内的全部修改、变型以及等同物。The foregoing and other features of the present application will be apparent from the description, The specific embodiments of the present application are specifically disclosed in the specification and the drawings, which illustrate a part of the embodiments in which the principles of the present application may be employed, it being understood that the present application is not limited to the described embodiments, but instead The application includes all modifications, variations and equivalents falling within the scope of the appended claims.
实施例1Example 1
本申请实施例1提供一种氮化镓(GaN)基外延结构。Embodiment 1 of the present application provides a gallium nitride (GaN) based epitaxial structure.
图1是本申请实施例中氮化镓基外延结构的一个示意图，如图1所示，该氮化镓基外延结构包括：1 is a schematic diagram of a gallium nitride based epitaxial structure in an embodiment of the present application. As shown in FIG. 1, the gallium nitride based epitaxial structure includes:
第一氮化镓层100，其掺杂有第一浓度的碳(C)原子；a first gallium nitride layer 100 doped with a first concentration of carbon (C) atoms;
第二氮化镓层200，其掺杂有第二浓度的碳(C)原子，所述第二浓度小于所述第一浓度；以及 a second gallium nitride layer 200 doped with a second concentration of carbon (C) atoms, the second concentration being less than the first concentration;
碳原子掺杂阻挡层300，其位于所述第一氮化镓层和所述第二氮化镓层之间，用于阻挡碳原子在所述第一氮化镓层和所述第二氮化镓层之间扩散。a carbon atom doped barrier layer 300 between the first gallium nitride layer and the second gallium nitride layer for blocking carbon atoms in the first gallium nitride layer and the second nitrogen Diffusion between gallium layers.
在本申请的实施例中，通过在高掺杂的第一氮化镓层和低掺杂的第二氮化镓层之间设置碳原子掺杂阻挡层，阻挡碳原子在第一氮化镓层和第二氮化镓层之间扩散，能够获得高阻的第一GaN层，同时能够获得C杂质浓度较低且厚度较小的本征的第二GaN层。In an embodiment of the present application, a carbon atom-doped barrier layer is disposed between the highly doped first gallium nitride layer and the low-doped second gallium nitride layer to block carbon atoms in the first gallium nitride The diffusion between the layer and the second gallium nitride layer enables a high-resistance first GaN layer to be obtained while obtaining an intrinsic second GaN layer having a lower C impurity concentration and a smaller thickness.
在本实施例中，碳原子掺杂阻挡层300可以是单层结构，例如，可以是GaN层、AlN层、AlyGa1-yN层、InxGa1-xN层和InxAlyGa1-x-yN中的至少一层，其中，0<x<1，0<y<1。此外，该单层的厚度可以是1纳米-15纳米。In the present embodiment, the carbon atom doped barrier layer 300 may be a single layer structure, for example, may be a GaN layer, an AlN layer, an Al y Ga 1-y N layer, an In x Ga 1-x N layer, and an In x Al At least one of y Ga 1-xy N, where 0<x<1, 0<y<1. Further, the thickness of the single layer may be from 1 nm to 15 nm.
在本实施例中，碳原子掺杂阻挡层300可以是多层结构，例如，可以是GaN层、AlN层、AlyGa1-yN层和InxGa1-xN层中的至少两层组成的周期性结构，其中，该周期性结构中的周期数大于2且小于10，比如，该多层结构可以是AlGaN/GaN/AlGaN/GaN等。In the present embodiment, the carbon atom doped barrier layer 300 may be a multilayer structure, for example, may be at least two of a GaN layer, an AlN layer, an Al y Ga 1-y N layer, and an In x Ga 1-x N layer. A periodic structure composed of layers, wherein the number of periods in the periodic structure is greater than 2 and less than 10. For example, the multilayer structure may be AlGaN/GaN/AlGaN/GaN or the like.
在本实施例中，第一氮化镓层100的厚度可以为0.5微米-4微米，第二氮化镓层200的厚度可以为100纳米-500纳米。In this embodiment, the first gallium nitride layer 100 may have a thickness of 0.5 micrometers to 4 micrometers, and the second gallium nitride layer 200 may have a thickness of 100 nanometers to 500 nanometers.
在本实施例中，第一氮化镓层100中碳原子的第一浓度可以大于5×1018CM-3，第二氮化镓层200中碳原子的第二浓度可以小于1×1017CM-3。In this embodiment, the first concentration of carbon atoms in the first gallium nitride layer 100 may be greater than 5×10 18 CM −3 , and the second concentration of carbon atoms in the second gallium nitride layer 200 may be less than 1×10 17 . CM -3.
本申请实施例1还提供一种半导体器件，该半导体器件中包含上述氮化镓基外延结构。Embodiment 1 of the present application further provides a semiconductor device including the above-described gallium nitride-based epitaxial structure.
图2是本申请实施例1的半导体器件的一个示意图，如图2所示，该半导体器件包括：2 is a schematic diagram of a semiconductor device according to Embodiment 1 of the present application. As shown in FIG. 2, the semiconductor device includes:
衬底400； Substrate 400;
位于衬底400表面的缓冲层500；a buffer layer 500 on the surface of the substrate 400;
位于缓冲层500表面的如图1所示的氮化镓基外延结构；以及a gallium nitride based epitaxial structure as shown in FIG. 1 on the surface of the buffer layer 500;
位于该氮化镓基外延结构的第二氮化镓层200表面的有源层。An active layer on a surface of the second gallium nitride layer 200 of the gallium nitride based epitaxial structure.
在本实施例中，衬底400可以是异质衬底。In the present embodiment, the substrate 400 may be a foreign substrate.
在本实施例中，缓冲层500可以是AlN缓冲层、AlGaN缓冲层、或AlN/AlGaN缓冲层。In the present embodiment, the buffer layer 500 may be an AlN buffer layer, an AlGaN buffer layer, or an AlN/AlGaN buffer layer.
在本实施例中，有源层600为AlZGa1-ZN，其中，0.2<Z<0.5。In the present embodiment, the active layer 600 is Al Z Ga 1-Z N, where 0.2 < Z < 0.5.
在本实施例中，可以在有源层600与第二氮化镓层200的界面形成沟道(channel)，因此，第二氮化镓层200可以被称为沟道层。In the present embodiment, a channel may be formed at the interface between the active layer 600 and the second gallium nitride layer 200. Therefore, the second gallium nitride layer 200 may be referred to as a channel layer.
此外，关于图2中第一氮化镓层100、第二氮化镓层200、以及碳原子掺杂阻挡层300的说明，可以参考对图1的相应说明。In addition, with regard to the description of the first gallium nitride layer 100, the second gallium nitride layer 200, and the carbon atom doped barrier layer 300 in FIG. 2, reference may be made to the corresponding description of FIG.
本申请实施例1还提供一种氮化镓(GaN)基外延结构的形成方法，该方法用于形成图1所示的氮化镓基外延结构。Embodiment 1 of the present application also provides a method for forming a gallium nitride (GaN)-based epitaxial structure for forming the gallium nitride-based epitaxial structure shown in FIG.
该氮化镓(GaN)基外延结构的形成方法包括：The method for forming the gallium nitride (GaN)-based epitaxial structure includes:
步骤101、在衬底表面形成第一氮化镓层100，其掺杂有第一浓度的碳(C)原子，；Step 101, forming a first gallium nitride layer 100 on the surface of the substrate, which is doped with a first concentration of carbon (C) atoms;
步骤102、在第一氮化镓层100表面形成碳原子掺杂阻挡层300；以及Step 102, forming a carbon atom doped barrier layer 300 on the surface of the first gallium nitride layer 100;
步骤103、在碳原子掺杂阻挡层300表面形成第二氮化镓层200，其掺杂有第二浓度的碳(C)原子，所述第二浓度小于所述第一浓度，其中，所述碳原子掺杂阻挡层用于阻挡碳原子在所述第一氮化镓层和所述第二氮化镓层之间扩散。Step 103, forming a second gallium nitride layer 200 on the surface of the carbon atom doped barrier layer 300, which is doped with a second concentration of carbon (C) atoms, and the second concentration is less than the first concentration, wherein The carbon atom doped barrier layer serves to block diffusion of carbon atoms between the first gallium nitride layer and the second gallium nitride layer.
在本实施例中，形成第二氮化镓层200时衬底的温度可以高于形成第一氮化镓层100时衬底的温度。In the present embodiment, the temperature of the substrate when the second gallium nitride layer 200 is formed may be higher than the temperature of the substrate when the first gallium nitride layer 100 is formed.
在本实施例中，步骤101的具体实施方式例如可以是：衬底为异 质衬底，反应器为MOCVD反应器，在形成第一氮化镓层100时，合成气体源为TMGa和NH3，反应腔内衬底表面温度<970℃，C原子掺杂源由TMGa分裂形成，反应腔内气压小于100mbar，由此形成绝缘或半绝缘的碳掺杂的第一氮化镓层100In this embodiment, the specific implementation of step 101 may be, for example, the substrate is a heterogeneous substrate, and the reactor is an MOCVD reactor. When the first gallium nitride layer 100 is formed, the synthesis gas source is TMGa and NH 3 . The surface temperature of the substrate in the reaction chamber is <970 ° C. The C atom doping source is formed by TMGa splitting, and the gas pressure in the reaction chamber is less than 100 mbar, thereby forming an insulating or semi-insulating carbon doped first gallium nitride layer 100.
在本实施例中，步骤103的具体实施方式例如可以是：在形成第二氮化镓层200时，衬底表面温度>970℃，气压大于150mbar，以保证更低的TMGa分裂，形成较低的C掺杂，由此形成本征掺杂或非故意掺杂的第二氮化镓层200。In this embodiment, the specific implementation of step 103 may be, for example, when the second gallium nitride layer 200 is formed, the substrate surface temperature is > 970 ° C, and the gas pressure is greater than 150 mbar to ensure lower TMGa splitting and lower formation. The C is doped, thereby forming an intrinsically doped or unintentionally doped second gallium nitride layer 200.
本申请实施例1还提供一种半导体器件的形成方法，该方法用于形成图2所示的半导体器件。Embodiment 1 of the present application also provides a method of forming a semiconductor device for forming the semiconductor device shown in FIG. 2.
该半导体器件的形成方法包括：The method of forming the semiconductor device includes:
步骤201、在衬底400表面形成缓冲层500；Step 201, forming a buffer layer 500 on the surface of the substrate 400;
步骤202、在缓冲层500表面形成第一氮化镓层100，其掺杂有第一浓度的碳(C)原子；Step 202, forming a first gallium nitride layer 100 on the surface of the buffer layer 500, which is doped with a first concentration of carbon (C) atoms;
步骤203、在第一氮化镓层100表面形成碳原子掺杂阻挡层300；以及Step 203, forming a carbon atom doped barrier layer 300 on the surface of the first gallium nitride layer 100;
步骤204、在碳原子掺杂阻挡层300表面形成第二氮化镓层200，其掺杂有第二浓度的碳(C)原子，所述第二浓度小于所述第一浓度；以及Step 204, forming a second gallium nitride layer 200 on the surface of the carbon atom doped barrier layer 300 doped with a second concentration of carbon (C) atoms, the second concentration being less than the first concentration;
步骤205、在第二氮化镓层200表面形成有源层600，其中，碳原子掺杂阻挡层300用于阻挡碳原子在第一氮化镓层100和第二氮化镓层200之间扩散。Step 205, forming an active layer 600 on the surface of the second gallium nitride layer 200, wherein the carbon atom doped barrier layer 300 is used to block carbon atoms between the first gallium nitride layer 100 and the second gallium nitride layer 200. diffusion.
在本实施例中，步骤201的具体实施方式例如可以是：衬底为异质衬底，反应器为MOCVD反应器。In this embodiment, the specific implementation of step 201 may be, for example, the substrate is a heterogeneous substrate, and the reactor is an MOCVD reactor.
在本实施例中，步骤202的具体实施方式例如可以是：在形成第 一氮化镓层100时，合成气体源为TMGa和NH3，反应腔内衬底表面温度<970℃，C原子掺杂源由TMGa分裂形成，气压小于100mbar，由此形成第一氮化镓层100。In this embodiment, the specific implementation manner of step 202 may be: In a gallium nitride layer 100, the synthesis gas source is TMGa and NH3, the surface temperature of the substrate in the reaction chamber is <970 ° C, the C atom doping source is formed by TMGa splitting, and the gas pressure is less than 100 mbar, thereby forming the first gallium nitride layer. 100.
在本实施例中，步骤204的具体实施方式例如可以是：在形成第二氮化镓层200时，衬底表面温度>970℃，气压大于150mbar，以保证更低的TMGa分裂，形成极低的C掺杂，由此，形成本征掺杂或非故意掺杂的第二氮化镓层200。In this embodiment, the specific implementation of step 204 may be, for example, when the second gallium nitride layer 200 is formed, the substrate surface temperature is > 970 ° C, and the gas pressure is greater than 150 mbar to ensure a lower TMGa splitting, which is extremely low. The C is doped, thereby forming an intrinsic doped or unintentionally doped second gallium nitride layer 200.
在本实施例中，步骤203和205可以采用现有技术中的方法来实现，本实施例不再进行说明。In this embodiment, the steps 203 and 205 can be implemented by using the methods in the prior art, which is not described in this embodiment.
在本申请中，碳原子掺杂阻挡层300利用界面吸附效应，能够有效阻挡C原子掺杂的扩散，能够在极高的C掺杂第一氮化镓层100上实现低C掺杂、厚度较小的第二氮化镓层200，这种结构能够解决GaN HEMT中C掺杂引起的电流崩塌等一系列问题，同时避免了GaN沟道层过厚所引起的应力不平衡、晶圆易碎等问题。In the present application, the carbon atom doped barrier layer 300 can effectively block the diffusion of C atom doping by utilizing the interface adsorption effect, and can realize low C doping and thickness on the extremely high C doped first gallium nitride layer 100. The second second gallium nitride layer 200 can solve a series of problems such as current collapse caused by C doping in the GaN HEMT, and avoids the stress imbalance caused by the excessive thickness of the GaN channel layer, and the wafer is easy to be Broken and other issues.
以上结合具体的实施方式对本申请进行了描述，但本领域技术人员应该清楚，这些描述都是示例性的，并不是对本申请保护范围的限制。本领域技术人员可以根据本申请的精神和原理对本申请做出各种变型和修改，这些变型和修改也在本申请的范围内。 The present invention has been described in connection with the specific embodiments thereof, but it is to be understood that the description is intended to be illustrative and not restrictive. Various modifications and alterations of the present application are possible in light of the spirit and scope of the invention, which are also within the scope of the present application.

Claims (10)

  1. 一种氮化镓(GaN)基外延结构，其特征在于，该外延结构包括：A gallium nitride (GaN) based epitaxial structure, characterized in that the epitaxial structure comprises:
    第一氮化镓层，其掺杂有第一浓度的碳(C)原子；a first gallium nitride layer doped with a first concentration of carbon (C) atoms;
    第二氮化镓层，其掺杂有第二浓度的碳(C)原子，所述第二浓度小于所述第一浓度；以及a second gallium nitride layer doped with a second concentration of carbon (C) atoms, the second concentration being less than the first concentration;
    碳原子掺杂阻挡层，其位于所述第一氮化镓层和所述第二氮化镓层之间，用于阻挡碳原子在所述第一氮化镓层和所述第二氮化镓层之间扩散。a carbon atom doped barrier layer between the first gallium nitride layer and the second gallium nitride layer for blocking carbon atoms in the first gallium nitride layer and the second nitride Diffusion between gallium layers.
  2. 如权利要求1所述的氮化镓基外延结构，其特征在于，The gallium nitride based epitaxial structure according to claim 1, wherein
    所述碳原子掺杂阻挡层为GaN层、AlN层、AlyGa1-yN层、InxGa1-xN层和InxAlyGa1-x-yN中的至少一层，其中，0<x<1，0<y<1。The carbon atom doped barrier layer is at least one of a GaN layer, an AlN layer, an Al y Ga 1-y N layer, an In x Ga 1-x N layer, and In x Al y Ga 1-xy N, wherein 0<x<1, 0<y<1.
  3. 如权利要求2所述的氮化镓基外延结构，其特征在于，The gallium nitride based epitaxial structure according to claim 2, wherein
    所述碳原子掺杂阻挡层为GaN层、AlN层、AlyGa1-yN层和InxGa1-xN层中的至少两层组成的周期性结构，其中，所述周期性结构中的周期数大于2且小于10。The carbon atom doped barrier layer is a periodic structure composed of at least two layers of a GaN layer, an AlN layer, an Al y Ga 1-y N layer, and an In x Ga 1-x N layer, wherein the periodic structure The number of cycles in the cycle is greater than 2 and less than 10.
  4. 如权利要求1所述的氮化镓基外延结构，其特征在于，The gallium nitride based epitaxial structure according to claim 1, wherein
    所述第一氮化镓层的厚度为0.5微米-4微米，The first gallium nitride layer has a thickness of 0.5 μm to 4 μm.
    所述第二氮化镓层的厚度为100纳米-500纳米。The second gallium nitride layer has a thickness of 100 nm to 500 nm.
  5. 如权利要求1所述的氮化镓基外延结构，其特征在于，The gallium nitride based epitaxial structure according to claim 1, wherein
    所述第一浓度大于5×1018CM-3，The first concentration is greater than 5×10 18 CM -3 ,
    所述第二浓度小于1×1017CM-3。The second concentration is less than 1 x 10 17 CM -3 .
  6. 一种半导体器件，其特征在于，该半导体器件包括：A semiconductor device characterized in that the semiconductor device comprises:
    衬底； Substrate
    位于所述衬底表面的缓冲层；a buffer layer on a surface of the substrate;
    位于所述缓冲层表面的如权利要求1-5中任一项所述的氮化镓基外延结构；以及a gallium nitride-based epitaxial structure according to any one of claims 1 to 5, located on the surface of the buffer layer;
    位于所述氮化镓基外延结构的所述第二氮化镓层表面的有源层。An active layer on a surface of the second gallium nitride layer of the gallium nitride-based epitaxial structure.
  7. 如权利要求6所述的半导体器件，The semiconductor device of claim 6
    所述有源层为AlZGa1-ZN，其中，0.2<Z<0.5。The active layer is Al Z Ga 1-Z N, wherein 0.2 < Z < 0.5.
  8. 一种氮化镓(GaN)基外延结构的形成方法，其特征在于，该形成方法包括：A method for forming a gallium nitride (GaN)-based epitaxial structure, characterized in that the forming method comprises:
    在衬底表面形成第一氮化镓层，其掺杂有第一浓度的碳(C)原子；Forming a first gallium nitride layer on the surface of the substrate doped with a first concentration of carbon (C) atoms;
    在所述第一氮化镓层表面形成碳原子掺杂阻挡层；以及Forming a carbon atom doped barrier layer on a surface of the first gallium nitride layer;
    在所述碳原子掺杂阻挡层表面形成第二氮化镓层，其掺杂有第二浓度的碳(C)原子，所述第二浓度小于所述第一浓度；Forming a second gallium nitride layer on the surface of the carbon atom doped barrier layer doped with a second concentration of carbon (C) atoms, the second concentration being less than the first concentration;
    其中，所述碳原子掺杂阻挡层用于阻挡碳原子在所述第一氮化镓层和所述第二氮化镓层之间扩散。Wherein the carbon atom doped barrier layer is used to block diffusion of carbon atoms between the first gallium nitride layer and the second gallium nitride layer.
  9. 如权利要求8所述的形成方法，其中，The forming method according to claim 8, wherein
    形成所述第二氮化镓层时所述衬底的温度高于形成所述第一氮化镓层时所述衬底的温度。The temperature of the substrate when the second gallium nitride layer is formed is higher than the temperature of the substrate when the first gallium nitride layer is formed.
  10. 一种半导体器件的形成方法，其特征在于，该形成方法包括：A method of forming a semiconductor device, characterized in that the method for forming comprises:
    在衬底表面形成缓冲层；Forming a buffer layer on the surface of the substrate;
    在所述缓冲层表面形成第一氮化镓层，其掺杂有第一浓度的碳(C)原子；Forming a first gallium nitride layer on the surface of the buffer layer, which is doped with a first concentration of carbon (C) atoms;
    在所述第一氮化镓层表面形成碳原子掺杂阻挡层；以及Forming a carbon atom doped barrier layer on a surface of the first gallium nitride layer;
    在所述碳原子掺杂阻挡层表面形成第二氮化镓层，其掺杂有第二浓度的碳(C)原子，所述第二浓度小于所述第一浓度；以及 Forming a second gallium nitride layer on the surface of the carbon atom doped barrier layer doped with a second concentration of carbon (C) atoms, the second concentration being less than the first concentration;
    在所述第二氮化镓层表面形成有源层，Forming an active layer on a surface of the second gallium nitride layer,
    其中，所述碳原子掺杂阻挡层用于阻挡碳原子在所述第一氮化镓层和所述第二氮化镓层之间扩散。 Wherein the carbon atom doped barrier layer is used to block diffusion of carbon atoms between the first gallium nitride layer and the second gallium nitride layer.
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