WO2018098816A1 - Appareil, procédé et système de fabrication d'une préforme de fibre optique - Google Patents

Appareil, procédé et système de fabrication d'une préforme de fibre optique Download PDF

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Publication number
WO2018098816A1
WO2018098816A1 PCT/CN2016/108405 CN2016108405W WO2018098816A1 WO 2018098816 A1 WO2018098816 A1 WO 2018098816A1 CN 2016108405 W CN2016108405 W CN 2016108405W WO 2018098816 A1 WO2018098816 A1 WO 2018098816A1
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Prior art keywords
rod
deposition
diameter
central control
control device
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PCT/CN2016/108405
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English (en)
Chinese (zh)
Inventor
沈一春
钱宜刚
薛济萍
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中天科技精密材料有限公司
江苏中天科技股份有限公司
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Priority to PCT/CN2016/108405 priority Critical patent/WO2018098816A1/fr
Publication of WO2018098816A1 publication Critical patent/WO2018098816A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod

Definitions

  • the invention relates to the technical field of optical fiber preform manufacturing, in particular to a manufacturing device, a manufacturing method and a manufacturing system of an optical fiber preform.
  • Optical fiber preform manufacturing is divided into mandrel manufacturing and outer cladding manufacturing, that is, the mandrel (including the core layer and the optical cladding) is first manufactured, and then the cladding is deposited outside the mandrel to prepare an optical fiber preform.
  • the manufacturing methods of optical fiber preform rods mainly include axial vapor deposition (VAD), modified chemical vapor deposition (MCVD), plasma chemical vapor deposition (PCVD) and extra-tube vapor deposition (OVD), and outer cladding.
  • VAD axial vapor deposition
  • MCVD modified chemical vapor deposition
  • PCVD plasma chemical vapor deposition
  • OTD extra-tube vapor deposition
  • outer cladding outer cladding
  • An apparatus for manufacturing an optical fiber preform comprising: a deposition target rod, a deposition torch, and a central control device, wherein a burner port of the deposition torch is disposed toward the deposition target rod, and the deposition torch is connected to the central control device
  • the manufacturing apparatus further includes a ranging unit connected to the central control device, the ranging unit is configured to monitor a rod diameter of the preform and feed back the detected detection rod diameter to the central control device, The central control device adjusts the flow rate of the SiCl 4 of the deposition torch according to the detection rod diameter.
  • the distance measuring unit and the deposition torch can be moved relative to the preform, the preform has a rod position, and when the distance measuring unit moves to a corresponding rod position, the rod diameter of the preform is detected and Detecting the rod diameter feedback to the central control device, the central control device presets a reference rod diameter, and the central control device compares the detection rod diameter corresponding to each rod position with the reference rod diameter The flow of SiCl 4 when the deposition torch is moved to the corresponding rod position is adjusted.
  • the detection rod diameters constitute a rod diameter group, and the rod diameter group includes B1, B2, B3, ..., BN, and the reference rod diameter is an average of the detection rod diameters in the rod diameter group. value.
  • the central control device controls to reduce the flow of the SiCl 4 of the deposition torch when the deposition torch moves to the corresponding rod position;
  • the central control device controls to increase the flow rate of the SiCl 4 of the deposition burner when the deposition torch is moved to the corresponding rod position.
  • the flow rate of the SiCl 4 of the deposition torch is adjusted by 0.5 g when the deposition torch moves to the corresponding rod position. /min.
  • the manufacturing apparatus is an off-tube vapor deposition apparatus.
  • a method for manufacturing an optical fiber preform includes monitoring a rod diameter of the preform by a distance measuring unit, and adjusting a flow rate of the SiCl 4 of the deposition burner according to the detected detection rod diameter.
  • the distance measuring unit is movable relative to the preform, the preform has a rod position, and when the distance measuring unit moves to a corresponding rod position, the rod diameter of the preform is detected, corresponding to each rod position.
  • the flow of SiCl 4 when the deposition burner is moved to the corresponding rod position is adjusted.
  • a manufacturing system for an optical fiber preform comprising a first manufacturing apparatus and a manufacturing apparatus as described above, the preform comprising a core rod and an outer cladding coated on an outer side of the core rod, the first manufacturing apparatus For depositing a mandrel, a manufacturing apparatus as described above is used to deposit an outer cladding on the outer side of the mandrel.
  • the core rod includes a core layer and an optical cladding layer coated on the core layer
  • the first manufacturing apparatus includes a deposition target rod, a temperature measuring unit, a first burner, and a first central control device.
  • the deposition target rod is used for attaching powder to form a core rod during deposition
  • the burner port of the first burner is disposed toward the deposition target rod, the first burner, the temperature measuring unit and the first central control
  • the temperature measuring unit is configured to monitor a deposition temperature of the core layer and feed back the detected deposition temperature to the first central control device every preset time, the first central control device according to the The detected deposition temperature control adjusts the H 2 flow rate in the first burner.
  • the optical fiber preform manufacturing device, the manufacturing method and the manufacturing system provided by the invention adjust the flow rate of the SiCl 4 of the deposition torch according to the detection rod diameter detected by the distance measuring unit, thereby realizing the correction of the rod diameter during the deposition process. This results in a good consistency of the preform's rod diameter, further improving the performance and manufacturing yield of the preform.
  • Figure 1 is a schematic illustration of an optical fiber preform manufacturing system in accordance with a preferred embodiment of the present invention.
  • Figure 2 is a schematic view of the end face of the preform.
  • Figure 3 is a schematic view of a first manufacturing apparatus.
  • Figure 4 is a comparison of the original process and the single bar refractive index axial test of the present embodiment.
  • Figure 5 is a schematic illustration of a mandrel.
  • Figure 6 is a schematic view of a second manufacturing apparatus.
  • Optical fiber preform manufacturing system 300 Preform 400 Mandrel 401 Outsourcing layer 403 Core layer 405 Optical cladding 407 Axis 409, 101 First manufacturing equipment 100 Second manufacturing equipment 200 Deposition chamber 11 Lifting device 12 Rotating device 13 Deposition target 14,207 First blowtorch 15 Second blowtorch 16 Gas supply device 17 Temperature measuring unit 18 Measuring unit 19 First central control unit 20 Ranging unit 201 Deposition blowtorch 203 Second central control device 205
  • the present invention provides an optical fiber preform manufacturing system 300 for fabricating a preform 400.
  • the preform 400 includes a core rod 401 and an outer cladding 403 coated on the core rod 401.
  • the optical fiber preform manufacturing system 300 includes a first manufacturing apparatus 100 and a second manufacturing apparatus 200.
  • the first manufacturing apparatus 100 is for depositing and manufacturing a mandrel 401 including a starting rod made of a glass material for providing a growth base and a core layer formed by depositing a powder at an end of the starting rod 405 and an optical cladding 407 coated on the core layer 405.
  • the core layer 405 has a higher refractive index than the optical cladding 407.
  • the second manufacturing apparatus 200 is used to deposit the outer cladding 403.
  • the first manufacturing apparatus 100 prepares the mandrel 401 by axial vapor deposition (VAD); the second manufacturing apparatus 200 deposits on the mandrel 401 by an out-of-pipe vapor deposition method (OVD) to form an outer cladding 403.
  • VAD axial vapor deposition
  • ODD out-of-pipe vapor deposition method
  • the first manufacturing apparatus 100 includes a deposition chamber 11 , a lifting device 12 , a rotating device 13 , a deposition target rod 14 , a first torch 15 , a second torch 16 , a gas supply device 17 , and a temperature measuring unit 18 .
  • the caliper unit 19 and the first central control unit 20 are included in the first manufacturing apparatus 100 .
  • the lifting device 12 is disposed above the deposition chamber 11, and the rotating device 13 is mounted on the lifting device 12.
  • the deposition target rod 14 is mounted on the rotating device 13 and housed in the deposition chamber 11.
  • the rotating device 13 is provided with an axis 101.
  • the lifting device 12 is used to drive the deposition target rod 14 to ascend or descend along the axis 101, and the rotating device 13 is used to drive the deposition target rod 14 to rotate about the axis 101.
  • the deposition target rod 40 is used to adhere the powder to form the core rod 401 during deposition.
  • the first torch 15 and the second torch 16 are located on the lower side of the deposition chamber 11.
  • the burner port (not shown) of the first burner 15 and the burner port (not shown) of the second burner 16 are located inside the deposition chamber 11 and are disposed toward the deposition target 14.
  • the core layer 405 is formed by depositing powder at the end of the mandrel 401 with the first torch 15 to cause the core layer 405 to grow downward from the end of the mandrel 401.
  • the first torch 15 is used to provide a core growth material.
  • the second cladding lamp 16 is used to deposit a powder on the end of the mandrel 401 to form an optical cladding 407, so that the optical cladding 407 is deposited on the core layer 405 and grown downward from the end of the mandrel 401.
  • the second torch 16 is used to provide an optical cladding growth material.
  • the gas supply means 17 is connected to the first burner 50 and the second burner 60 for supplying the first burner 50 and the second burner 60 with a gas such as SiCl 4 , GeCl 4 or the like, and a fuel such as a mixture of hydrogen and oxygen.
  • the gas supply device 17 includes a plurality of gas supply portions (not shown).
  • the plurality of gas supply units include a SiCl 4 supply unit, a GeCl 4 supply unit, an Ar supply unit, an O 2 supply unit, an H 2 supply unit, and the like, and the plurality of gas supply units respectively pass through the pipeline and the first A burner 50 and a second burner 60 are connected.
  • a gas control unit (not shown) is provided between each gas supply unit and the corresponding burner for controlling the gas flow at different stages.
  • a plurality of gas control units are communicatively coupled to the first central control unit 20.
  • the flow rate of SiCl 4 can be adjusted between 0.1g/min and 20g/min. At high temperature, the flame is hydrolyzed to form SiO 2 , which is used to form the cladding and core layer of the preform; the flow rate of GeCl 4 can be from 0.01g/min to 1.0. Adjusted between g/min, the flame is hydrolyzed to form GeO 2 at high temperature, and is doped in the core layer to increase the refractive index of the core layer.
  • the surface of the pipe for transporting SiCl 4 and GeCl 4 requires a heating belt and the temperature is controlled at 100 °C.
  • the H 2 flow rate can be adjusted from 0.1 L/min to 30 L/min; the O 2 flow rate can be adjusted from 0.1 L/min to 50 L/min, wherein H 2 acts as a combustion, O 2 serves as a combustion aid, and, in addition, H 2 is completely reacted, and it is necessary to set the O 2 flow rate to be surplus when the flow rate is set.
  • Ar flow can be adjusted from 0.1 L/min to 10 L/min.
  • Ar acts as a carrier gas to carry the raw material gas; and secondly, separates H 2 and O 2 to prevent mixing and reaction in the torch.
  • the temperature measuring unit 18 is located below the deposition chamber 11 and is spaced apart from the first burner 15 and the second burner 16.
  • the temperature measuring unit 18 is for monitoring the deposition temperature of the core layer 405 at the end of the mandrel 401, and feeds back the detected deposition temperature to the first central control device 20 every predetermined time.
  • the deposition temperature detected by the temperature measuring unit 18 is referred to as a detection deposition temperature.
  • the temperature measuring unit 18 is an infrared thermal imager.
  • the first central control device 20 pre-stores a preset target temperature, a preset temperature deviation, and a preset adjustment flow rate.
  • the first central control device 20 performs a calculation process on the detected deposition temperature and the preset target temperature, and controls the H 2 supply unit to perform the first and second blowers 15 and 16 according to the processing result of the first central control device 20 . Perform gas supply.
  • the detected deposition temperature is a detection deposition temperature
  • the detection deposition temperature constitutes a first group
  • the first group includes t1, t2, t3, ... t(i-1), ti according to the detection sequence.
  • the first central control device 20 takes an average of the detected deposition temperatures for N consecutive times, the average value constitutes a second group, and the second group includes t1', t2', and t3 in an average order.
  • the temperature measuring unit 18 detects the deposition temperature of the core layer 405 of the mandrel 401 at a time interval of 10 seconds, which are sequentially recorded as t1, t2, t3, ... t(i-1), ti.
  • the detecting deposition temperature constitutes a first group, which includes t1, t2, t3, ... t(i-1), ti according to the detection order.
  • the temperature measuring unit 18 feeds back the detected deposition temperature to the first central control unit 20.
  • the first central control unit 20 takes the detection deposition temperature five times in succession and calculates an average value. For example, the average value of t1 to t5 is recorded as t1', the average value of t2 to t6 is recorded as t2', and so on.
  • the average constitutes a second group.
  • the second group includes t1', t2', t3'... t(i-1)', ti'. Let t(i-1)' be the previous value of ti', for example, t2' is the previous value of t1'.
  • Each average is compared with 1050 ° C and the previous value (such as t2 'compared with 1050 ° C and t1 '; t3 ' compared with 1050 ° C and t2 ' ...), such as an average deviation from the 1050 ° C If the average value is greater than 2 ° C, the H 2 flow rate remains unchanged; if the average value is greater than 2 ° C above the 1050 ° C, compared with the previous value, taking t2 ' as an example, if t2 ' is greater than t1 ', the H 2 flow rate is decreased.
  • the H 2 flow rate in the burner can be controlled according to the detection deposition temperature without taking the average value.
  • the H 2 flow rate is increased by 0.1 L/min without being compared with the previous value.
  • N detection deposition temperatures are not limited to a continuous detection sequence, which may also be randomly selected N detection deposition temperatures.
  • the temperature measuring unit 18 is not limited to detect the deposition temperature once every 10S interval, and it can also detect the acquisition at other times.
  • the preset target temperature, the preset temperature deviation, and the preset adjustment flow rate can be set according to the actual deposition process of manufacturing the preform.
  • the central control device 20 calculates a preset adjustment flow control H 2 to adjust the flow rate according to the detected deposition temperature and the processing result.
  • the temperature measuring unit 18 is not limited to an infrared thermal imager, which may also be other temperature sensors.
  • the detection deposition temperature constitutes a first group, which includes t1, t2, t3, ... t(i-1), ti, and averages all detected deposition temperatures of the first group. If the deviation between the average value and the preset temperature target is not greater than the preset temperature deviation, the H 2 flow rate of the first torch 15 remains unchanged; when the deviation between the average value and the preset temperature target deviation greater than a preset temperature, H 2 is adjusted to increase the flow rate, wherein each large 1 °C, the H 2 flow rate is adjusted first torch 15 is increased 0.1L / min, for example, large 1 °C, adjusting the first burner 15 The flow rate of H 2 is 0.1 L/min, and when it is 2 ° C, the flow rate of H 2 of the first burner 15 is adjusted to be 0.2 L/min.
  • gas supply means 17 may be omitted and the first manufacturing apparatus 100 is connected to an external gas supply means.
  • the lifting device 12, the rotating device 13, and the deposition chamber 11 can be omitted.
  • the first central control device 20 controls the H 2 in real time according to the detected deposition temperature.
  • the flow rate ensures the stability of the surface temperature of the mandrel 401, thereby improving the stability of the refractive index of the mandrel 405.
  • the gas flow rate is adjusted in real time, and the deposition of the mandrel 401 is accurately controlled, which can effectively prevent the core rod from cracking due to a large density gradient, thereby improving product quality and yield.
  • the caliper unit 19 includes a first caliper unit 191 and a second caliper unit 193.
  • the first caliper unit 191 is located below the side of the deposition chamber 11, adjacent to the temperature measuring unit 18 and disposed away from the first burner 15 for measuring the diameter of the end core 405 of the mandrel 401.
  • the second caliper unit 193 is located below the side of the deposition chamber 11 and is disposed adjacent to the second torch 16 for measuring the diameter of the optical cladding 407 at the end of the mandrel 401.
  • the first caliper unit 191 and the second caliper unit 193 are CCD cameras.
  • the diameter of the core layer detected by the first caliper unit 191 is the diameter of the detection core layer
  • the diameter of the optical cladding layer detected by the second caliper unit 193 is the diameter of the detection optical cladding.
  • the first caliper unit 191 detects the end core diameter every interval of the first predetermined caliper time and feeds back the detected core layer diameter to the first central control device 20, and the second caliper unit 193 is spaced apart by the second
  • the optical cladding is detected by a preset caliper time and the detected optical cladding diameter is fed back to the first central control device 20.
  • the diameter of the core layer is d, and the diameter of the optical cladding is D.
  • the caliper unit 191 detects the diameter of the end core layer every 1 minute.
  • the first central control device 20 pre-stores the core layer diameter target.
  • the predetermined core layer diameter target is a predetermined core layer diameter range, and the predetermined core layer diameter ranges from 58.3 to 58.7 mm.
  • the flow rate of SiCl 4 of the first burner 15 is constant; if the diameter of the detection core layer is smaller than the minimum threshold of the predetermined core diameter range, 58.3 Mm, the first central control device 20 controls the flow rate of the SiCl 4 of the first burner 15 to be increased by 0.05 g/min, and if the diameter of the detection core layer is greater than the maximum threshold of the predetermined core diameter range of 58.7 mm, the first A central control unit 20 controls the flow rate of the SiCl 4 of the first burner 15 to be lowered by 0.05 g/min.
  • the end point of the preform 400 adjacent to the lifting device 12 is an origin, and a position along the axial direction of the preform 400 (consistent with the length direction) is a rod position, and each rod has Corresponding length (distance between the position and the origin), core diameter d and optical cladding diameter D and rod diameter (diameter of preform 400).
  • the first caliper unit 191 detects that the detected core layer diameter of the rod position L is d, and records both L and d into the first central control device 20.
  • the first central control device 20 calculates a predetermined optical cladding diameter target according to the rod position L and its corresponding core diameter d, and the optical cladding target is 4.15 times the diameter d of the detection core layer of the corresponding rod position. .
  • the second caliper unit 193 detects the optical cladding diameter every 1 minute, and transmits the detection optical cladding diameter to the first central control device 20.
  • the second torch 16 has an initial SiCl 4 flow rate of 50 g/min, which is adjusted based on the detected optical cladding diameter.
  • the flow rate of SiCl 4 of the second burner 16 is increased by 0.5 g/min, when the diameter of the detection optical cladding is larger than the optical cladding of the corresponding rod With the diameter target, the flow of SiCl 4 of the second burner 16 is reduced by 0.5 g/min.
  • the diameter of the core layer ranges from 58 to 60 mm, and the diameter of the optical cladding is in the range of 240 to 258 mm.
  • the diameter of the core layer d along the axial direction is different from that of the optical cladding diameter D, D/d
  • the fluctuation is 0.2.
  • the diameter of the core layer deposited is in the range of 58 to 59 mm
  • the diameter of the optical cladding is in the range of 240 to 244 mm
  • the fluctuation in D/d is 0.05.
  • the first central control device 20 adjusts the flow rate of the SiCl 4 of the first torch 15 according to the diameter of the monitoring core layer, thereby ensuring the consistency of the core diameter of the deposition growth.
  • the first central control device 20 sets the optical cladding target according to the detection core diameter of the corresponding rod position, and adjusts the flow of the SiCl 4 of the second burner 16 according to the optical cladding target and the detection optical cladding diameter to perform dynamic precision
  • the regulation ensures the consistency of the optical cladding diameter and further ensures the consistency of the core-package ratio, thereby improving the manufacturing yield of the mandrel 401.
  • the time when the first caliper unit 191 and the second caliper unit 193 detect the interval is not limited.
  • first caliper unit 191 and the second caliper unit 193 are not limited to a CCD camera, and may also be other measurement distance sensors, such as an ultrasonic sensor.
  • the caliper unit 190 can be a caliper unit disposed under the deposition chamber 11, and then the image is processed by the image processing unit in the first central control device 20 to obtain the core diameter and the diameter of the optical cladding. .
  • the first central control device 20 pre-stores corresponding preset core layer diameter range, core layer diameter target and optical cladding diameter target according to each rod position, according to the detected core layer diameter and the preset core layer diameter range. adjusting the flow rate of SiCl 4 of a second burner 16, based on the monitored optical cladding diameter and the clad diameter of the optical target adjusting SiCl 4 detector 16 flow of the second torch.
  • the second manufacturing apparatus 200 is for depositing on the mandrel 401 by an out-of-pipe vapor deposition method (OVD) to form an outer cladding 403 to form the preform 400.
  • ODD out-of-pipe vapor deposition method
  • the preform 400 coincides with the axis 101 along its longitudinal axis.
  • the second manufacturing apparatus 200 is provided with a distance measuring unit 201, a deposition torch 203, a second central control unit 205, and a deposition target rod 207.
  • the ranging unit 201 and the deposition torch 203 are communicatively coupled to the second central control unit 205.
  • the ranging unit 201 is used to monitor the rod diameter of the preform 400.
  • the distance measuring unit 201 is an ultrasonic range finder. It will be appreciated that the second manufacturing apparatus 200 also includes other necessary or non-essential structures, such as deposition cavities, which are not described herein.
  • the preform 400 has an axis 409 (along the length of the preform).
  • the ranging unit 201 and the deposition torch 203 are movable relative to the preform 400 along an axis generally parallel to the axis 409.
  • the second central control device 205 pre-stores the first motion path of the ranging unit 201 along an axis parallel to the axis 409, and controls the ranging unit 201 to move according to the first motion path when detecting the rod diameter, and controls the ranging Unit 201 detects the rod diameter and its corresponding rod position at regular intervals.
  • the second central control device 205 pre-stores a second path of motion of the deposition torch 203 along an axis parallel to the axis 409 and controls the deposition torch 203 to move in accordance with the second path of motion and to record the bar relative to the preform 400 .
  • the distance measuring unit 201 and the deposition torch 203 are movable relative to the preform 400.
  • the rod diameter of the preform 400 is detected and the detection rod diameter is fed back to the
  • the second central control device 205 the central control device 205 presets a reference rod diameter, and the second central control device 205 compares the detection rod diameter corresponding to each rod position with the reference rod diameter.
  • the flow of SiCl 4 when the deposition torch 203 is moved to the corresponding rod position is adjusted.
  • the second central control device 205 controls the movement of the deposition torch 203 to the corresponding rod position to reduce the flow of the SiCl 4 of the deposition burner 203;
  • the second central control device 205 controls to increase the flow rate of the SiCl 4 of the deposition burner when the deposition torch 203 is moved to the corresponding rod position.
  • the ranging unit 201 tests the real-time bar diameter distribution every 5 minutes. During the test, the ranging unit 201 detects the rod diameter of the preform 400 along the axis parallel to the axis 409 of the preform 400 relative to the preform 400 and feeds back the detection rod diameter and the corresponding position (recording a rod diameter every 2 mm) to The second central control device 205, for example, the first rod diameter B1 and its corresponding rod position L1, the second rod diameter B2 and its corresponding rod position L2, the third rod diameter, and so on.
  • the second central control device 205 calculates the average value B' of the detection rod diameters (B1, B2, ...) as a reference rod diameter, and calculates a relationship between the detection rod diameter of each point and the reference rod diameter B'.
  • the rod diameter difference for example, the rod diameter difference between B1 and B' is B1', the rod diameter difference between B2 and B' is B2'..., and so on.
  • the second central control device 205 associates the rod diameter difference with the movement path of the deposition torch 205, and at the corresponding rod position, when the deviation between the reference rod diameter and the detection rod diameter is different by 1 mm, the deposition torch 205 travels to correspond At the rod position, the flow rate of SiCl 4 of the deposition torch 205 was adjusted accordingly to 0.5 g/min.
  • the ranging unit 201 and the deposition torch 203 do not define movement relative to the preform 400 along an axis parallel to the axis 409 of the preform 400, and the ranging unit 201 can measure the diameter of the preform 400.
  • the deposition torch 203 can provide the preform 400 with a material for deposition growth.
  • the ranging unit 201 is configured to monitor the rod diameter of the preform 400 and feed back the detected detection rod diameter to the second central control device 205, and the second central control device 205 is configured according to the The rod diameter is adjusted to adjust the flow of SiCl 4 of the deposition torch.
  • the reference rod diameter may not be the average value of the detection rod diameter, and the second central control device 205 corresponds to the required preset reference rod diameter, and the second central control device 205 corresponds to each rod position.
  • the comparison between the detection rod diameter and the reference rod diameter adjusts the flow rate of the SiCl 4 of the deposition torch at the corresponding rod position.
  • a preform formed by forming an outer layer is deposited on the mandrel by an out-of-pipe vapor deposition method (OVD), the rod diameter ranges from 239 to 246 mm, and the rod diameter fluctuates to 8 mm.
  • the second central control device 205 controls the deposition torch 205 to adjust the flow of the SiCl 4 at the corresponding rod position according to the detection rod diameter detected by the ranging unit 201, thereby realizing the correction of the rod diameter during the deposition process, and the rod is corrected.
  • the diameter ranges from 241 to 243 mm, and the diameter of the single rod fluctuates by 2 mm.
  • the rod diameter of the preform 400 has a good consistency, and the performance and manufacturing yield of the preform 400 are further improved.
  • the mode field diameter and the cut-off wavelength of the preform 400 in the axial direction can be increased.
  • the standard deviation of the preform 400 after drawing is 11 and the over-standard ratio is 0.1%.
  • the invention also provides a method for manufacturing an optical fiber preform, which comprises the following steps:
  • a powder is attached to the deposition target rod to form a core rod, and the core rod includes a core layer and an optical cladding.
  • the mandrel is fabricated by an axial vapor deposition method.
  • the deposition target rod can be used to provide a first torch movement that provides a core growth material.
  • step 602 the powder is deposited on the optical cladding of the mandrel to form an outer layer, thereby forming a preform.
  • the mandrel is fabricated by an out-of-pipe vapor deposition method.
  • step 601 the method further includes monitoring a deposition temperature of the core layer 405 of the mandrel, and controlling the H 2 flow rate in the first torch providing the core growth material according to the deposition temperature of the monitoring core layer.
  • the deposition temperature of the core layer is detected every predetermined time interval, and the detected deposition temperature is a detection deposition temperature, and the detection deposition temperature is a first group, and the first group includes the detection sequence.
  • T1, t2, t3, ... t(i-1), ti taking the average of the detected deposition temperatures for N consecutive times, the average value constitutes the second group, and the second group is in the average order Including t1', t2', t3'...t(i-1)', ti', let t(i-1)' be the pre-value of ti', compare ti' with the preset target temperature, when When the deviation of ti' from the preset target temperature is not greater than the preset temperature deviation, the H 2 flow rate in the first torch remains unchanged, when ti' is between the preset target temperature When the deviation is greater than the preset temperature deviation, comparing ti' with t(i-1)', and adjusting the first burner according to the difference between the t
  • the deposition temperature of the core layer 405 at the end of the mandrel 401 is detected once every 10 seconds, and is sequentially recorded as t1, t2, t3, t4, t5, t6, t7, t8, t9, .
  • the detecting deposition temperature constitutes a first group comprising t1, t2, t3, t4, t5, t6, t7, t8, t9, .
  • the temperature measuring unit 18 feeds back the detected deposition temperature to the first central control unit 20.
  • the first central control unit 20 takes the detection deposition temperature five times in succession and calculates an average value. For example, the average value of t1 to t5 is recorded as t1', the average value of t2 to t6 is recorded as t2', and so on.
  • the average constitutes a second group.
  • the second group includes t1', t2', t3'.
  • T2' is the previous value of t1'.
  • Each average is compared with 1050 ° C and the previous value (such as t2 'compared with 1050 ° C and t1 '; t3 ' compared with 1050 ° C and t2 ' ...), such as an average deviation from the 1050 ° C If the value is not more than 2 ° C, the H 2 flow rate remains unchanged; if the average value is greater than 2 ° C above the 1050 ° C, compared with the previous value, taking t2 ' as an example, if t2 ' is greater than t1 ' then the first burner The H 2 flow rate is reduced by 0.1 L/min.
  • t2' is less than t1', the H 2 flow rate remains unchanged; if it is 2 ° C or more smaller than the preset target temperature, it is compared with the previous value, taking t2' as an example, such as t2'. If it is greater than t1', the H 2 flow rate remains unchanged. If t2' is less than t1', the H 2 flow rate is increased by 0.1 L/min.
  • the H 2 flow rate of the first burner is increased by 0.1 L/min without being compared with the previous value.
  • N detection deposition temperatures are not limited to a continuous detection sequence, which can also be randomly extracted N detection deposition temperatures.
  • the preset target temperature is set to a preset temperature deviation of 2 ° C
  • the preset adjustment flow rate can be set in the process of actually depositing the preform.
  • the method is not limited to the use of the axial vapor deposition method, and may be other methods such as an out-of-pipe vapor deposition method, an improved chemical vapor deposition method (MCVD), or a plasma chemical vapor deposition method (PCVD), as long as it can be in the core.
  • MCVD chemical vapor deposition method
  • PCVD plasma chemical vapor deposition method
  • the flow rate of H 2 is adjusted in real time by monitoring the deposition temperature of the core layer and ensuring the stability of the temperature according to the deposition temperature of the core layer.
  • step 601 further comprising monitoring a core layer diameter, wherein the measured core layer diameter is a detected core layer diameter, and adjusting the core for providing the core when the detected core layer diameter deviates from a predetermined core layer diameter target
  • the flow rate of SiCl 4 of the first burner of the layer growth material is the diameter of the core layer
  • the predetermined core layer diameter is the predetermined core layer diameter range.
  • the SiCl 4 flow rate of the first burner for providing the core growth material is adjusted when it is detected that the end core diameter is not within the preset core diameter range.
  • adjusting the flow rate of the SiCl 4 of the first torch is adjusted; when detecting that the end cladding diameter is larger than the maximum threshold of the preset core diameter range At the time, the flow rate of the SiCl 4 of the first burner is adjusted.
  • the diameter of the core layer is d, and the diameter of the optical cladding is D.
  • the caliper unit 191 detects the diameter of the end core layer every 1 minute.
  • the predetermined core layer diameter ranges from 58.3 to 58.7 mm.
  • the flow rate of SiCl 4 of the first burner 15 is constant; if the diameter of the detection core layer is smaller than the minimum threshold of the predetermined core diameter range, 58.3 Mm, the flow rate of the SiCl 4 of the first burner 15 is controlled to increase by 0.05 g/min, and if the diameter of the core layer is greater than the maximum threshold of the predetermined core diameter of 58.7 mm, the first burner 15 is controlled to be adjusted.
  • the SiCl 4 flow rate was reduced by 0.05 g/min.
  • the method further comprises: detecting an optical cladding diameter of the mandrel, setting the detected optical cladding diameter to detect an optical cladding diameter, and detecting a predetermined optical cladding target of a certain rod position according to the detection of the corresponding rod position
  • the core layer diameter is set, when the diameter of the detection optical cladding of a certain rod position is smaller than the corresponding optical cladding diameter target, then controlling the flow of SiCl 4 of the second burner for providing the optical cladding growth material; Detecting the optical cladding diameter larger than the optical cladding diameter target of the corresponding rod position reduces the SiCl 4 flow rate of the second burner.
  • the optical cladding target is preset according to the rod position, and the predetermined optical cladding target is 4.15 times the diameter d of the detection core of the corresponding rod position.
  • the detecting optical cladding diameter is smaller than the optical cladding diameter target of the corresponding rod position, adjusting the flow rate of the second burner for providing the optical cladding growth material; when the detection optical cladding diameter is larger than The optical cladding diameter target of the corresponding rod position is adjusted to reduce the flow rate of the second burner for providing the optical cladding growth material.
  • the calculation process results in a predetermined optical cladding diameter target, which is 4.15 times the diameter d of the detection core layer of the corresponding rod position.
  • the end optical cladding diameter was measured every 1 minute.
  • the second torch 16 has an initial SiCl 4 flow rate of 50 g/min, which is adjusted based on the detected optical cladding diameter.
  • the flow rate of the second burner 16 is increased by 0.5 g/min, when the diameter of the detection optical cladding is larger than the optical cladding diameter target of the corresponding rod Then, the flow rate of the second burner 16 is reduced by 0.5 g/min.
  • the method is not limited to the use of the axial vapor deposition method, and may be other methods such as an out-of-pipe vapor deposition method, an improved chemical vapor deposition method (MCVD), or a plasma chemical vapor deposition method (PCVD), as long as it can be in the core.
  • MCVD improved chemical vapor deposition method
  • PCVD plasma chemical vapor deposition method
  • the flow rate of the SiCl 4 of the first and second burners is adjusted in real time by monitoring the diameter of the core layer and the diameter of the optical cladding, thereby ensuring the uniformity of the diameter of the core layer and the uniform diameter of the optical cladding. Sex.
  • step 602 the method further includes monitoring the rod diameter of the preform, and adjusting the flow rate of the SiCl 4 of the deposition burner according to the detected detection rod diameter.
  • the distance measuring unit is an ultrasonic range finder.
  • the ranging unit detects the rod diameter and its corresponding rod position at regular intervals.
  • the ranging unit tests the real-time bar diameter distribution every 5 minutes.
  • the distance measuring unit detects the rod diameter relative to the preform movement along an axis parallel to the axis of the preform and records the detection rod diameter and the corresponding position, for example, the first rod diameter B1 and its corresponding rod position L1, and second The rod diameter B2 and its corresponding rod position L2, the third rod diameter..., and so on.
  • the manufacturing method includes monitoring the rod diameter of the preform through a distance measuring unit, and adjusting the flow rate of the SiCl 4 of the deposition burner according to the detected detection rod diameter.
  • the ranging unit can move relative to the preform, the preform has a rod position, and when the ranging unit moves to a corresponding rod position, the rod diameter of the preform is detected, corresponding to each rod position.
  • the flow of SiCl 4 when the deposition burner is moved to the corresponding rod position is adjusted.
  • the optical fiber preform manufacturing equipment, the manufacturing equipment and the manufacturing method thereof provide real-time control of adjusting the flow rate of H 2 according to the detection deposition temperature, ensuring the stability of the surface temperature of the mandrel, thereby improving the stability of the refractive index of the mandrel, It also improves the product yield of optical fiber preforms.
  • the optical cladding target and the detection optical cladding diameter adjust the flow rate of the second burner to perform dynamic precise adjustment, ensure the consistency of the optical cladding diameter, and further ensure the consistency of the core-package ratio, and improve the manufacturing yield of the core rod .
  • the deposition torch is adjusted to adjust the flow of SiCl 4 at the corresponding rod position, thereby realizing the correction of the rod diameter during the deposition process, so that the rod diameter of the preform is very consistent. To further improve the performance and manufacturing yield of the preform.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)

Abstract

L'invention concerne un appareil (200) permettant de fabriquer une préforme de fibre optique, ainsi qu'un procédé et un système de fabrication de la préforme de fibre optique à l'aide de l'appareil. L'appareil comprend une tige cible de dépôt (207), des lampes à souder de dépôt (203), un dispositif de commande central (205) et une unité de mesure de distance (201), une embouchure de lampe à souder des lampes à souder de dépôt (203) étant disposée en direction de la tige cible de dépôt, les lampes à souder de dépôt (203) étant reliées au dispositif de commande central (205), l'unité de mesure de distance (201) étant utilisée pour surveiller le diamètre de la préforme et pour renvoyer le diamètre détecté au dispositif de commande central (205), et le dispositif de commande central (205) règle le flux de SiCl4 à partir des lampes à souder de dépôt (203) sur la base du diamètre détecté.
PCT/CN2016/108405 2016-12-02 2016-12-02 Appareil, procédé et système de fabrication d'une préforme de fibre optique WO2018098816A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112358176A (zh) * 2020-12-15 2021-02-12 江苏奥维信亨通光学科技有限公司 光纤预制棒芯棒用两种规格包芯比生产设备及其方法
CN115159833A (zh) * 2022-07-06 2022-10-11 杭州金星通光纤科技有限公司 一种大尺寸高沉积速率的光纤预制棒制造装置及方法

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Publication number Priority date Publication date Assignee Title
WO2002102729A1 (fr) * 2001-06-14 2002-12-27 Sumitomo Electric Industries, Ltd. Dispositif et procede permettant de produire un empilement de particules de verre fines
CN1951848A (zh) * 2005-10-19 2007-04-25 三星电子株式会社 气相轴向沉积装置及气相轴向沉积方法
CN102741183A (zh) * 2010-03-03 2012-10-17 株式会社藤仓 石英多孔质体的制造方法、光纤母材的制造方法、石英多孔质体及光纤母材
CN204675996U (zh) * 2015-04-20 2015-09-30 通鼎互联信息股份有限公司 光纤预制棒制造装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002102729A1 (fr) * 2001-06-14 2002-12-27 Sumitomo Electric Industries, Ltd. Dispositif et procede permettant de produire un empilement de particules de verre fines
CN1951848A (zh) * 2005-10-19 2007-04-25 三星电子株式会社 气相轴向沉积装置及气相轴向沉积方法
CN102741183A (zh) * 2010-03-03 2012-10-17 株式会社藤仓 石英多孔质体的制造方法、光纤母材的制造方法、石英多孔质体及光纤母材
CN204675996U (zh) * 2015-04-20 2015-09-30 通鼎互联信息股份有限公司 光纤预制棒制造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112358176A (zh) * 2020-12-15 2021-02-12 江苏奥维信亨通光学科技有限公司 光纤预制棒芯棒用两种规格包芯比生产设备及其方法
CN115159833A (zh) * 2022-07-06 2022-10-11 杭州金星通光纤科技有限公司 一种大尺寸高沉积速率的光纤预制棒制造装置及方法

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