WO2018097263A1 - Source de vaporisation à arc - Google Patents

Source de vaporisation à arc Download PDF

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Publication number
WO2018097263A1
WO2018097263A1 PCT/JP2017/042287 JP2017042287W WO2018097263A1 WO 2018097263 A1 WO2018097263 A1 WO 2018097263A1 JP 2017042287 W JP2017042287 W JP 2017042287W WO 2018097263 A1 WO2018097263 A1 WO 2018097263A1
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WIPO (PCT)
Prior art keywords
magnetic field
target
tip surface
field generation
straight line
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PCT/JP2017/042287
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English (en)
Japanese (ja)
Inventor
山本　兼司
水野　雅夫
哲 奈良井
信弘 原田
佐々木　徹
一匡 高橋
崇志 菊池
匠 真木
慶太 佐々木
Original Assignee
株式会社神戸製鋼所
国立大学法人長岡技術科学大学
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Publication of WO2018097263A1 publication Critical patent/WO2018097263A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns

Definitions

  • the present invention relates to an arc evaporation source having a target that evaporates by arc discharge.
  • a method for forming a coating on the surface of a substrate using arc discharge have been proposed as a method for forming a coating on the surface of a substrate such as a tool or machine part for the purpose of improving wear resistance.
  • a film forming method a method using a cathode discharge type arc evaporation source is known.
  • the arc evaporation source includes a target, and the target is instantly vaporized by vacuum arc discharge, and a film is formed by depositing ionized charged particles on the surface of the substrate.
  • Patent Documents 1 and 2 disclose a technique for forming a magnetic field between a target and a substrate using an electromagnetic coil.
  • Patent Document 3 discloses a technique for forming a magnetic field between a target and a substrate using a permanent magnet. The charged particles emitted from the surface of the target are in a highly ionized plasma state containing electrons and ions. In the techniques described in the above documents, the trajectory of the charged particles emitted from the target is controlled by a magnetic field formed between the target and the substrate.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide an arc evaporation source capable of increasing the arrival efficiency at which charged particles emitted from a target reach the surface of an object.
  • an arc evaporation source that supplies charged particles toward a predetermined object
  • the arc evaporation source includes a tip surface, and the tip surface is melted and evaporated by arc discharge.
  • a target that emits charged particles, and a cylindrical shape having a reference straight line orthogonal to the tip surface of the target as a center, intersecting the tip surface of the target and from the tip surface toward the object side
  • a magnetic field generation mechanism that includes at least a magnetic field generation unit that forms a magnetic field that extends, and that guides the charged particles emitted from the tip surface toward the object, wherein the reference straight line and the tip surface of the target
  • the magnitude of the magnetic field at the intersection is B0 (Gauss)
  • the maximum value of the magnetic field on the reference straight line between the tip surface and the object is Bm (Gauss).
  • FIG. 1 It is a schematic diagram of the arc film-forming apparatus provided with the arc evaporation source which concerns on 1st Embodiment of this invention. It is a schematic diagram for demonstrating the positional relationship of the arc evaporation source which concerns on 1st Embodiment of this invention, and a target object. It is a schematic sectional drawing for demonstrating the positional relationship of the target of the arc evaporation source which concerns on 1st Embodiment of this invention, and a magnetic field generation part, and the shape of a magnetic field generation part. It is a distribution map which shows distribution of the magnetic field which a magnetic field generation mechanism forms in the arc evaporation source concerning a 1st embodiment of the present invention.
  • FIG. 1 It is a schematic diagram of the arc film-forming apparatus provided with the arc evaporation source which concerns on 1st Embodiment of this invention. It is a schematic diagram for demonstrating the positional relationship of the arc evaporation source which concerns on 1
  • FIG. 5 is an enlarged distribution diagram in which the periphery of the target in the distribution diagram of FIG. 4 is enlarged. It is sectional drawing of the target and magnetic field generation
  • the arc evaporation source in the arc evaporation source according to the first embodiment of the present invention, it is a distribution diagram showing the distribution of the magnetic field formed by the magnetic field generation mechanism, and is a distribution diagram for illustrating the influence of the inner diameter of the magnetic field generation unit.
  • it is a distribution diagram showing the distribution of the magnetic field formed by the magnetic field generation mechanism, and is a distribution diagram for illustrating the influence of the inner diameter of the magnetic field generation unit.
  • it is a distribution diagram showing the distribution of the magnetic field formed by the magnetic field generation mechanism, and is a distribution diagram for illustrating the influence of the inner diameter of the magnetic field generation unit.
  • FIG. 1 is a schematic view of an arc film forming apparatus 1 including an arc evaporation source 1A according to the present embodiment.
  • FIG. 2 is a schematic diagram for explaining the positional relationship between the arc evaporation source 1A and the base material S (target object) according to the present embodiment.
  • the film forming method in the arc film forming apparatus 1 according to the present embodiment is a kind of PVD (physical vacuum film forming method) in which the target T is vaporized and ionized instantaneously by vacuum arc discharge and deposited on the surface of the substrate S. is there.
  • a film formation method has a higher ionization rate than other PVD film formation methods such as sputtering, a dense and hard film can be formed. For this reason, a hard film such as TiN or TiAlN formed by the film forming method can be used for wear-resistant applications such as cutting tools.
  • an arc film forming apparatus 1 includes an arc evaporation source 1A, a chamber 10, a substrate stage 11, a plurality of holders 12, a plurality of heaters 13, a bias power source 14, and a gas supply source. 15 and an arc power supply 16.
  • the arc evaporation source 1A supplies charged particles toward the substrate S in FIG.
  • the arc evaporation source 1A includes the target T and the magnetic field generation mechanism 2 (FIG. 1).
  • the target T includes a target discharge surface TF (front end surface) (see FIG. 3) arranged so as to be orthogonal to the center line CL (reference straight line) (FIG. 2), and the target discharge surface TF is melted and evaporated by arc discharge. As a result, the charged particles are released.
  • the target emission surface TF has a circular shape centered on the center line CL, and faces the substrate S.
  • the material of the target T is not particularly limited in the present invention as long as it is evaporated as an arc discharge and used as a film forming material.
  • the target T can be made of a material such as carbon, tungsten carbide, tungsten, molybdenum, niobium, or an alloy thereof.
  • a Ti—Al alloy can be used as the target T in order to form a hard film.
  • release surface TF) and the base material S is defined as H (mm).
  • the magnetic field generation mechanism 2 (FIG. 1) forms a predetermined magnetic field between the target T and the substrate S, and guides the charged particles emitted from the target emission surface TF toward the substrate S.
  • the specific structure and function of the magnetic field generation mechanism 2 will be described in detail later.
  • the chamber 10 is a sealed casing made of a conductive material and functions as an electrode for discharging between the target T and the target discharge surface TF.
  • An internal space 10 ⁇ / b> A (FIG. 1) is formed inside the chamber 10.
  • the internal space 10A accommodates a target T, a substrate stage 11, a plurality of holders 12, a plurality of heaters 13, and the like.
  • FIG. 2 shows the arc film-forming apparatus 1 from the side.
  • the chamber 10 includes a flange 10F (FIG. 2), a cylindrical portion 10G (FIG. 1), and a suction portion 10S (FIG. 1).
  • the internal space 10A of the target T is depressurized to a vacuum or a pressure close thereto by a vacuum pump (not shown) through the suction unit 10S when arc discharge occurs (that is, during film formation).
  • a vacuum pump not shown
  • FIG. 2 the cylindrical portion 10G (FIG. 1) connected to the flange 10F and surrounding the target T is omitted.
  • the substrate stage 11 is disposed in the internal space 10A.
  • the substrate stage 11 is rotated by a drive mechanism (not shown).
  • the plurality of holders 12 are arranged on the substrate stage 11 at intervals in the circumferential direction, and the plurality of substrates S are fixed on each holder 12.
  • the plurality of holders 12 are respectively rotated on the substrate stage 11.
  • the holder 12 that supports the plurality of substrates S rotates on the substrate stage 11 while revolving with the rotation of the substrate stage 11.
  • a film is uniformly formed over the entire circumferential direction of the substrate S.
  • the center of rotation of the substrate stage 11 coincides with the center line CL.
  • the plurality of heaters 13 warm the substrate S on the substrate stage 11 to a predetermined temperature.
  • the substrate S is heated to 550 degrees during film formation by arc discharge.
  • four heaters 13 are arranged in the internal space 10A.
  • the bias power supply 14 applies a predetermined bias to the substrate S in order to facilitate the deposition of charged particles on the substrate S.
  • the bias power source 14 applies a bias of ⁇ 30 (V) to the substrate S.
  • the gas supply source 15 fills the internal space 10A sucked by the vacuum pump as described above with an inert gas such as argon or a reactive gas such as nitrogen and methane at a predetermined pressure.
  • an inert gas such as argon or a reactive gas such as nitrogen and methane at a predetermined pressure.
  • the arc power supply 16 generates an arc discharge between the target discharge surface TF of the target T and the chamber 10 by applying a voltage between the target T and the chamber 10 serving as an electrode facing the target T.
  • the cathode of the arc power supply 16 is connected to the target T.
  • the anode of the arc electrode 16 is connected to the chamber 10 and to an ignition rod (not shown).
  • the arc power supply 16 applies a voltage between the target T and the chamber 10 and also applies a voltage between the target T and the ignition rod.
  • the ignition rod comes into contact with the target T, whereby arc discharge can be started between the target discharge surface TF and the chamber 10.
  • the magnetic field generation mechanism 2 includes an electromagnetic coil 20 (magnetic field generation unit).
  • FIG. 3 is a schematic cross-sectional view for explaining the positional relationship between the target T of the arc evaporation source 1A and the electromagnetic coil 20 and the shape of the electromagnetic coil 20 according to the present embodiment.
  • FIG. 4 is a distribution diagram showing the distribution of the magnetic field formed by the electromagnetic coil 20 of the arc evaporation source 1A.
  • FIG. 5 is an enlarged distribution diagram in which the periphery of the target T in the distribution diagram of FIG. 4 is enlarged.
  • the electromagnetic coil 20 is disposed between the target T and the base material S and has a cylindrical shape (cylindrical shape) with the center line CL as an axis.
  • the electromagnetic coil 20 allows charged particles emitted from the target T to pass through the inside of the cylindrical shape.
  • the electromagnetic coil 20 is connected to a power source (not shown) so that a magnetic field that induces charged particles emitted from the target emission surface TF toward the substrate S is generated between the target T and the substrate S.
  • the magnetic field is a loop-shaped magnetic field that connects the cylindrical inner peripheral side and the outer peripheral side of the electromagnetic coil 20, intersects the target emission surface TF of the target T, and passes through the interior of the electromagnetic coil 20 from the target emission surface TF.
  • the magnetic field extends toward the substrate S side.
  • the magnetic field generation unit according to the present invention is formed of a permanent magnet, the formed magnetic field does not have the loop shape as described above.
  • the electromagnetic coil 20 is disposed in front of the target T.
  • the distance from the target emission surface TF to the center position in the front-rear direction of the electromagnetic coil 20 having a cylindrical shape is defined as L (mm).
  • the electromagnetic coil 20 includes an outer peripheral surface 201 and an inner peripheral surface 202 that extend in parallel with the center line CL. Furthermore, the electromagnetic coil 20 includes a pair of ring-shaped end surfaces 203 that are orthogonal to the center line CL and connect the outer peripheral surface 201 and the inner peripheral surface 202.
  • the inner diameter of the electromagnetic coil 20 is defined as D (mm). In the present embodiment, the inner diameter D of the electromagnetic coil 20 is set to be larger than the outer diameter d (FIG.
  • the size of the target emission surface TF is set so that the projection of the electromagnetic coil 20 and the target emission surface TF of the target T do not overlap each other when viewed along the center line CL from the substrate S side. .
  • the length in the direction parallel to the center line CL of the outer peripheral surface 201 (inner peripheral surface 202) of the electromagnetic coil 20 is X (mm), and the thickness along the radial direction of the end surface 203 of the electromagnetic coil 20 is Y (mm). ).
  • FIG. 4 indicates the coordinate Z (mm) in the front-rear direction (axial direction) with the target emission surface TF as the zero point, and the vertical axis in FIG. 4 indicates the radial direction with the center line CL as the zero point.
  • the coordinate R (mm) in is shown.
  • a plurality of solid lines concentrically centered on the electromagnetic coil 20 correspond to magnetic force lines in which magnetic force (magnetic flux density) vectors are connected by lines. At this time, the solid line closer to the electromagnetic coil 20 indicates a stronger magnetic field because the density of the lines of magnetic force is higher.
  • the ring-shaped electromagnetic coil 20 forms a magnetic field as shown in FIG.
  • the graph display method is the same as in FIG.
  • a predetermined coil current flows into the electromagnetic coil 20
  • a strong magnetic field is formed in front of the target T as shown in FIG.
  • the magnetic field intersects the target emission surface TF of the target T and extends from the target emission surface TF toward the substrate S side.
  • the magnitude of the magnetic field at the intersection (TF1 in FIG. 5) between the center line CL and the target emission surface TF of the target T is B0 (Gauss), and the center line between the target emission surface TF and the base material S.
  • the maximum value of the magnetic field on CL is Bm (Gauss)
  • the following relational expression (Formula 2) is satisfied.
  • the distance between the target T and the substrate S tends to be long.
  • the arrival efficiency of the charged particles with respect to the substrate S tends to deteriorate.
  • the charged particles emitted from the target T are guided to the substrate S side by the applied magnetic field, but the charged particles collide with the atmospheric gas in the chamber 10 or the wall of the chamber 10. There is.
  • the “magnetic mirror effect” determined by the shape and intensity of the magnetic field.
  • the magnetic mirror effect refers to a phenomenon in which charged particles emitted from a weak magnetic field region change (reflect) toward the target T when moving in a magnetic field having a shape in which the intensity gradually increases. . This phenomenon is more likely to occur as the magnitude of Bm / B0 is larger.
  • the inventor of the present invention reduces the reflection of charged particles by forming a magnetic field such that the electromagnetic coil 20 satisfies the relationship of the above-described formula 2, and applies to the substrate S. It was newly discovered that the efficiency of arrival was improved. As a result, it has become possible to form a film on the substrate S at a film formation rate that is twice or more that of the prior art.
  • the cross-sectional shape of the electromagnetic coil 20 satisfies the relationship of the above-described formula 1
  • the magnitude B0 of the magnetic field at the intersection (TF1 in FIG. 5) between the center line CL and the target emission surface TF of the target T is increased.
  • a magnetic field that satisfies the relationship of Equation 2 is easily formed.
  • the arc evaporation source 1A capable of increasing the arrival efficiency of the charged particles emitted from the target T reaching the substrate S and improving the film formation rate on the substrate S is provided.
  • the cross-sectional shape of the electromagnetic coil 20 more preferably satisfies the relationship 5 ⁇ X / Y.
  • the magnetic force line DS formed on the target emission surface TF of the target T by the electromagnetic coil 20 of the magnetic field generation mechanism 2 moves to the center line CL as it advances toward the substrate S side. It is inclined at an angle ⁇ with respect to the target emission surface TF so as to approach.
  • a thermionic emission spot ( The arc spot) has a property of moving on the target discharge surface TF in the direction in which the magnetic field lines DS are tilted.
  • the magnetic field lines DS are inclined as described above with respect to the target emission surface TF. Furthermore, it is more desirable that the inclination angle ⁇ of the magnetic lines of force DS satisfies the relationship of 10 ° ⁇ ⁇ ⁇ 30 °.
  • the magnetic field lines DS are orthogonal to the target discharge surface TF, there is no restriction that the arc spot moves in the radial direction. For this reason, the arc spot may deviate from the target emission surface TF. Therefore, as described above, it is desirable to set the inclination of the magnetic field lines DS. Although it is more desirable that all the magnetic force lines DS on the target emission surface TF are inclined as described above, some of the magnetic force lines DS may be inclined as described above.
  • the magnitude B0 of the magnetic field at the intersection (TF1 in FIG. 5) between the center line CL and the target emission surface TF of the target T satisfy the following relational expression (Formula 4). 10 ⁇ B0 ⁇ 500 (Gauss) (Formula 4)
  • B0 ⁇ 10 Gas
  • the induction effect of inducing charged particles from the target emission surface TF is reduced, and the arrival efficiency of charged particles is likely to be reduced.
  • 500> B0 Gas
  • the discharge on the target emission surface TF is biased, and the utilization efficiency of the target T tends to deteriorate.
  • B0 is further desirably included in the range of 50 ⁇ B0 ⁇ 300 (Gauss).
  • FIG. 6 is a cross-sectional view of the target T and the electromagnetic coil 20A of the arc evaporation source according to the present embodiment.
  • the magnetic field generation mechanism of the arc evaporation source includes an electromagnetic coil 20A (magnetic field generation unit).
  • 20 A of electromagnetic coils form a predetermined magnetic field between the target T and the base material S (FIG. 1) similarly to the electromagnetic coil 20 which concerns on previous 1st Embodiment.
  • the electromagnetic coil 20A of FIG. 6 the length X (mm) in the direction parallel to the center line CL of the outer peripheral surface (inner peripheral surface) of the electromagnetic coil 20A (see FIG. 3), along the radial direction of the end surface of the electromagnetic coil 20A.
  • FIG. 7 is a cross-sectional view of the target T of the arc evaporation source and the plurality of electromagnetic coils 20B according to the present embodiment.
  • the magnetic field generation mechanism of the arc evaporation source includes a plurality of electromagnetic coils 20B (magnetic field generation units).
  • the electromagnetic coil 20B forms a predetermined magnetic field between the target T and the base material S (FIG. 1) similarly to the electromagnetic coil 20 according to the first embodiment.
  • three electromagnetic coils 20 ⁇ / b> B are arranged with a predetermined interval between the target T and a base material S (not shown).
  • an arc evaporation source capable of increasing the arrival efficiency of the charged particles emitted from the target T reaching the substrate S and improving the film formation rate on the substrate S is provided. Is done.
  • FIG. 8 is a cross-sectional view of the target T, the electromagnetic coil 20C, and the auxiliary magnet 30 of the arc evaporation source according to the present embodiment.
  • the magnetic field generation mechanism of the arc evaporation source includes an electromagnetic coil 20C (magnetic field generation unit) and an auxiliary magnet 30 (auxiliary magnetic field generation unit).
  • the magnetic field generation mechanism configured by the electromagnetic coil 20C and the auxiliary magnet 30 forms a predetermined magnetic field between the target T and the base material S (FIG. 1), similarly to the electromagnetic coil 20 according to the first embodiment. To do.
  • the auxiliary magnet 30 is disposed on the center line CL on the side opposite to the electromagnetic coil 20C with respect to the target T.
  • two disk-shaped NdFeB magnets 31 and 32 having a diameter of 100 mm and a thickness of 4 mm are prepared, and the two magnets 31 and 32 are used to form a disk-shaped magnetic body having a diameter of 100 mm and a thickness of 30 mm.
  • the auxiliary magnet 30 is configured by sandwiching 33 and fixing them together.
  • the polarity of the auxiliary magnet 30 is set so as to form a magnetic field in the same direction as the electromagnetic coil 20C with respect to the target emission surface TF of the target T.
  • the magnetic field (DS in FIG. 8) includes a component (DS1 in FIG. 8) in the same direction as the component extending in a direction parallel to the center line CL of the magnetic field formed by the electromagnetic coil 20C on the target emission surface TF of the target T. Is formed on the target discharge surface TF.
  • the magnetic field formed by the electromagnetic coil 20C and the magnetic field formed by the auxiliary magnet 30 reinforce each other on the target emission surface TF.
  • the magnitude B0 of the magnetic field at the intersection TF1 in FIG.
  • the magnetic field component (DS1) in the direction orthogonal to the target emission surface TF has a magnetic field in the direction parallel to the target emission surface TF. It is set larger than the component (DS2).
  • a magnetic field in which the charged particles emitted from the target emission surface TF by the auxiliary magnet 30 are likely to fly to the substrate S side is formed, and the magnetic field formed by the auxiliary magnet 30 and the magnetic field formed by the electromagnetic coil 20C are formed. Interaction (complementary action) can be enhanced.
  • the magnetic field generation mechanism includes the auxiliary magnet 30 as in the present embodiment, a magnetic field that satisfies the relationship of Equation 2 is formed even if the cross-sectional shape of the electromagnetic coil 20C does not satisfy Equation 1 above. Can do.
  • FIG. 9 is a cross-sectional view of the target T of the arc evaporation source and the pair of permanent magnets 20D according to the present embodiment.
  • the magnetic field generation mechanism of the arc evaporation source includes a pair of ring-shaped permanent magnets 20D (magnetic field generation unit).
  • Each of the pair of permanent magnets 20 ⁇ / b> D includes an N-pole magnet 21 and an S-pole magnet 22.
  • the ring-shaped permanent magnet 20D is made of, for example, an alloy containing neodymium (for example, NdFeB).
  • the permanent magnet 20D may be made of an alloy containing samarium and cobalt (SmCo).
  • an arc evaporation source capable of increasing the arrival efficiency of the charged particles emitted from the target T reaching the substrate S and improving the film formation rate on the substrate S is provided. Is done.
  • the magnetic field generation mechanism of the arc evaporation source includes an electromagnetic coil 20 (magnetic field generation unit) and an electromagnetic coil 25 (sub-magnetic field generation unit).
  • the magnetic field generation mechanism configured by the electromagnetic coil 20 and the electromagnetic coil 25 forms a predetermined magnetic field between the target T and the substrate S (FIG. 1), similarly to the electromagnetic coil 20 according to the first embodiment.
  • the electromagnetic coil 25 is disposed between the electromagnetic coil 20 and the substrate S and has a cylindrical shape with the center line CL as an axis.
  • the electromagnetic coil 25 allows charged particles emitted from the target T to pass through the inside of the cylindrical shape.
  • the electromagnetic coil 25 is connected to a power source (not shown) to form the magnetic field that extends from the target emission surface TF (tip surface) of the target T toward the base material S together with the electromagnetic coil 20.
  • a power source not shown
  • the electromagnetic coil 20 and the electromagnetic coil 25 having such a shape, it is possible to easily form a magnetic field that satisfies the relationship of the above-described Expression 2.
  • an arc evaporation source capable of increasing the arrival efficiency of the charged particles emitted from the target T reaching the substrate S and improving the film formation rate on the substrate S is provided. Is done.
  • the axial component of the magnetic field on the center line CL is the electromagnetic coil 20 side. It is desirable that the electromagnetic coil 20 and the electromagnetic coil 25 form a magnetic field that gradually decreases from the side toward the base material S side. In this case, since the extreme value is not formed in the axial component of the magnetic field from the electromagnetic coil 20 side to the base material S side, the arrival efficiency of charged particles on the base material S can be further increased.
  • each experiment to be described later includes, in the arc film forming apparatus 1 as shown in FIGS. 1 and 2, a magnetic field generation mechanism including a disk-shaped target T and a cylindrical (ring-shaped) electromagnetic coil or permanent magnet. And was performed based on the following experimental conditions.
  • Target T Disc-shaped TiAl with a diameter of 100 mm (Ti 50%, Al 50%) -Environment of internal space 10A (gas type and pressure): nitrogen, 4 (Pa) ⁇ Arc current: 150 (A) -Temperature of substrate S: 550 (° C) -Applied bias to substrate S: -30 (V) -Distance H from target T to substrate S (Fig. 2): 380 (mm) -Substrate S: Mirror-polished cemented carbide insert Table 1 shows the experimental conditions of Experiment 1 performed by the magnetic field generation mechanism (electromagnetic coil, permanent magnet) of Comparative Examples 1 and 2 and Examples 1 to 10.
  • the cross-sectional shape X / Y of the electromagnetic coil is set in the range of 2 to 8. Note that.
  • Example 7 the magnitude of the coil current flowing into the three electromagnetic coils is adjusted for comparison with other examples.
  • an auxiliary magnetic field applying mechanism in addition to the electromagnetic coil (electromagnetic coil 20C) disposed in front of the target T, an auxiliary magnetic field applying mechanism (in the rear of the target T (based on the above-described fourth embodiment (FIG. 8)) An auxiliary magnet 30) is arranged.
  • two disk-shaped NdFeB magnets having a diameter of 100 mm and a thickness of 4 mm were prepared, and a disk-shaped magnetic body having a diameter of 100 mm and a thickness of 30 mm was sandwiched between the two magnets.
  • the auxiliary magnets 30 are configured by bonding and fixing each other.
  • the auxiliary magnet 30 is composed of one disk-shaped NdFeB magnet having a diameter of 100 mm and a thickness of 4 mm.
  • the distance between the target surface and the target side surface of the auxiliary magnet is 80 mm.
  • Example 8 and Example 9 differ in the strength of the magnetic field B0 on the target emission surface TF of the target T (Table 2).
  • Comparative Example 2 was performed in order to be compared with Examples 8 and 9, and the arrangement of the magnetic poles of the auxiliary magnet 30 is opposite to that of Examples 8 and 9.
  • the direction of the magnetic field generated by the auxiliary magnet 30 on the target emission surface TF of the target T is the same as the direction of the magnetic field generated by the electromagnetic coil 20C (FIG. 8) on the target emission surface TF of the target T. Is in the opposite direction (reverse polarity), and it is a condition that the complementary action of each other's magnetic field is hardly exhibited.
  • a plurality of permanent magnets 20D are arranged in front of the target T based on the above-described fifth embodiment (FIG. 9). In the tenth embodiment, the three permanent magnets 20D are arranged at intervals.
  • the cross-sectional shape X / Y (specifically X ′ / Y) of one virtual permanent magnet formed by these permanent magnets 20D is set to 9.4.
  • an auxiliary magnet is provided at a position 80 mm behind the target T with respect to the conditions of the first embodiment.
  • the auxiliary magnet two disc-shaped NdFeB magnets having a diameter of 100 mm and a thickness of 4 mm are prepared, and a disc-like magnetic body having a diameter of 100 mm and a thickness of 30 mm is sandwiched between the two magnets. It is configured by bonding and fixing.
  • Table 2 shows the results of measuring the value of Bm / B0 and the film growth rate (deposition rate) per unit time on the substrate S in each experiment shown in Table 1.
  • FIG. 10 shows the distribution of the magnetic field formed by the magnetic field generation mechanism (the electromagnetic coil 20 and the auxiliary magnet 30) in the arc evaporation source according to the above-described fourth embodiment (Example 8 in Tables 1 and 2). It is a distribution map.
  • FIG. 11 is a distribution showing the distribution of the magnetic field formed by the electromagnetic coil 20Z in another arc evaporation source (Comparative Example 1 in Tables 1 and 2) compared with the arc evaporation source according to the embodiment of the present invention.
  • FIG. 12 is a distribution diagram of a magnetic field formed by the electromagnetic coil 20 and the auxiliary magnet 30Z in another arc evaporation source compared with the arc evaporation source according to the embodiment of the present invention.
  • the film forming rate on the substrate S was a high rate of 12 ( ⁇ m) or more. It was. This is more than twice the film formation rate of Comparative Example 1 that satisfies Bm / B0> 3.
  • Example 1 and Example 2 are compared, even if the cross-sectional sizes of the electromagnetic coils are different, the same film formation rate is achieved by setting the cross-sectional shape X / Y to the same size. .
  • Example 1 in which a cylindrical electromagnetic coil or a permanent magnet is disposed in front of the target T and no auxiliary magnetic field mechanism (auxiliary magnet 30, auxiliary magnetic field generation unit) is provided, the cross-sectional shape X When / Y ⁇ 2 (Formula 1) is satisfied, a magnetic field satisfying Bm / B0 ⁇ 3 (Formula 2) is formed.
  • a relationship is that, in the seventh and tenth embodiments in which a plurality of electromagnetic coils or permanent magnets are arranged at intervals, the cross-sectional shape X is replaced with a virtual one magnetic field generator (electromagnetic coil or permanent magnet).
  • a high film forming rate is realized by setting Bm / B0 to 1 or less.
  • the magnetic field distribution diagram of the eighth embodiment in FIG. 10 is compared with the magnetic field distribution diagram in the second comparative example in FIG. 12, in the second comparative example in FIG. 12, the magnetic field formed by the electromagnetic coil 20 and the auxiliary magnet 30Z are formed. Since the magnetic field is opposite in polarity, the magnetic fields repel each other and cancel each other, so the magnetic field on the target emission surface TF is small. Further, in FIG. 12, since a magnetic field parallel to the target emission surface TF is formed around the target emission surface TF, it is difficult to stably guide the emitted charged particles to the substrate S side. . On the other hand, in the magnetic field distribution diagram of Example 8 in FIG.
  • Table 3 shows the experimental conditions of Experiment 2 performed by the magnetic field generation mechanisms (electromagnetic coils) of Examples 12 to 17.
  • the target emission surface TF has a diameter of 100 mm as described above.
  • the magnetic field generation mechanism according to the sixth embodiment described above was used.
  • the electromagnetic coil 20 first electromagnetic coil in Table 3
  • the electromagnetic coil 25 second in Table 3
  • Example 15 and 17 the inner diameter D of both electromagnetic coils is set to 150 mm, and in Example 16, the inner diameter D is set to 200 mm.
  • Example 15 and Example 17 as a result of changing the magnitude of the coil current flowing into the electromagnetic coil 25, a difference occurs in the distribution of the magnetic field formed between the target T and the substrate S. (See FIGS. 17 and 18).
  • Table 4 shows the results of measuring the Bm / B0 value and the film growth rate (deposition rate) per unit time on the substrate S in each experiment shown in Table 3.
  • FIGS. 13 to 15 are distribution diagrams showing the distribution of the magnetic field formed by the magnetic field generation mechanism in the arc evaporation source according to the first embodiment described above, for illustrating the influence of the inner diameter of the magnetic field generation unit. It is a distribution map. 13, 14, and 15 correspond to Examples 6, 12, and 13, respectively.
  • FIG. 16 is an example of a distribution diagram showing the distribution of the magnetic field formed by the magnetic field generation mechanism in the arc evaporation source according to the aforementioned sixth embodiment (Examples 15 to 17). 13 to 16, a ring-shaped arc confinement member AT arranged around the target T appears.
  • the arc confinement member AT is a magnetic material. Further, FIG. 17 and FIG.
  • Example 18 are graphs showing the distribution of the axial component of the magnetic field on the center line CL (reference line) in Example 15 and Example 17, respectively.
  • the horizontal axis indicates the position in the axial direction
  • the vertical axis indicates the strength (magnitude) of the magnetic field (magnetic flux density).
  • 17 and 18 show the center position 20L of the electromagnetic coil 20 in the axial direction parallel to the center line CL, and the base material S is arranged on the extension of the horizontal axis.
  • the inner diameter D of the electromagnetic coil 20 is set larger than the diameter of the target discharge surface TF. Then, Bm / B0 becomes small (Examples 6, 12, 13, and 14). As a result, it is possible to increase the arrival efficiency at which the charged particles emitted from the target T reach the substrate S, and the film formation rate on the substrate S is improved.
  • the arrival efficiency of the charged particles with respect to the substrate S is between the target T and the magnetic field generation mechanism and between the magnetic field generation mechanism and the substrate S. It is determined by the behavior of charged particles.
  • a cylindrical electromagnetic coil 25 (second electromagnetic coil, sub-magnetic field) is further provided between the cylindrical electromagnetic coil 20 (first electromagnetic coil, magnetic field generator) and the substrate S. Generator) is provided.
  • Table 4 the arrival efficiency of charged particles is increased, and the film formation rate on the substrate S is improved.
  • Example 17 the film formation rate is improved as compared with Comparative Examples 1 and 2 described above, but the film formation rate is lower than that in Example 15 in which the shape of the electromagnetic coil 20 is the same.
  • Example 15 in the region from the center position 20L of the electromagnetic coil 20 in the axial direction parallel to the center line CL to the substrate S, the axial direction of the magnetic field on the center line CL (front and back) A magnetic field is formed by the electromagnetic coils 20 and 25 so that the component in the direction (X direction) gradually decreases from the electromagnetic coil 20 side toward the base material S side.
  • the axial component of the magnetic field on the center line CL partially rises between the electromagnetic coil 20 and the base material S as shown in FIG. Yes.
  • Example 17 compared with Example 15, the arrival efficiency of charged particles is lowered, and the film formation rate is lowered. That is, the axial component of the magnetic field on the center line CL gradually decreases from the electromagnetic coil 20 (magnetic field generating unit) side toward the base material S (target object) side and does not have a peak (extreme value). It is desirable that such a magnetic field be formed. In this case, it is more desirable that the magnetic field formed by the electromagnetic coil 25 on the center line CL is weaker than the magnetic field formed by the electromagnetic coil 20 on the center line CL.
  • the “gradual decrease” described above may include a region where the magnitude of the magnetic field is partially constant (same size) along the axial direction as shown in FIG. If there is no area to do.
  • the value is between the center (20L) of the electromagnetic coil 20 and the substrate S ( In this experiment, it is preferably 0, a positive value close to 0, or a negative value close to 0.
  • the slope is desirably 50 Gauss / 100 mm or less, and more desirably 20 Gauss / 100 mm or less.
  • the differential value is negative close to 0, it may be smaller than 0.
  • ⁇ 100 Gauss / 100 mm it is preferable to be closer to 0 than.
  • the present inventor further changed each experimental condition in the following range, and as a result, by satisfying the above-mentioned formula 2, it is possible to obtain a stable film formation rate. confirmed.
  • -Diameter (maximum diameter) of target discharge surface TF 50 mm or more and 150 mm or less.
  • -Inner diameter of magnetic field generator (electromagnetic coil or permanent magnet): 50 mm or more and 500 mm or less.
  • -Distance L from target emission surface TF to magnetic field generation part 50 mm or more and 200 mm or less.
  • -Distance H from target discharge surface TF to substrate S 100 mm or more and 500 mm or less.
  • the magnetic field generating unit according to the present invention has been described as being formed in a cylindrical shape (ring shape), but the present invention is not limited to this.
  • the target emission surface TF of the target T may have a rectangular shape
  • the magnetic field generation unit may have a rectangular tube shape so that the cross-sectional shape is a rectangular shape. That is, the magnetic field generation unit according to the present invention may have a cylindrical shape that passes the reference straightness inside.
  • the cylindrical shape of the magnetic field generating unit is not limited to a continuous one along the circumferential direction.
  • a plurality of magnetic field generators may be arranged at intervals in the circumferential direction to form a virtual cylindrical shape.
  • the size of the target emission surface TF is set so that the target emission surface TF can enter the cylindrical shape. It is desirable that the shape of the cylinder or the size of the cylinder be set in accordance with the shape of the target discharge surface TF. Also in this case, the size of the target emission surface TF is set so that the projection of the magnetic field generation unit and the target emission surface TF of the target T do not overlap each other when viewed along the center line CL from the substrate S side. It is desirable that
  • the present invention provides an arc evaporation source that supplies charged particles toward a predetermined object, and the arc evaporation source includes a tip surface and the tip surface is caused by arc discharge.
  • a target that discharges the charged particles by being dissolved and evaporated, and has a cylindrical shape with a reference straight line orthogonal to the tip surface of the target as an axis, intersecting the tip surface of the target and the tip surface
  • a magnetic field generation mechanism that at least includes a magnetic field generation unit that forms a magnetic field extending toward the object side from the front end surface, and that guides the charged particles emitted from the tip surface toward the object,
  • the magnitude of the magnetic field at the intersection point of the target with the tip surface is B0 (Gauss), and the maximum of the magnetic field on the reference straight line between the tip surface and the target object.
  • the magnetic field generation unit includes an outer peripheral surface and an inner peripheral surface that extend in parallel with the reference straight line, a pair of end surfaces that are orthogonal to the reference straight line and connect the outer peripheral surface and the inner peripheral surface; And the size of the tip surface is set so that the projection of the magnetic field generation unit and the tip surface of the target do not overlap each other when viewed from the object side along the reference straight line.
  • the length in the direction parallel to the reference straight line of the outer peripheral surface of the magnetic field generator is X (mm)
  • the thickness along the radial direction of the end face of the magnetic field generator is Y (mm)
  • size of the magnetic field which a magnetic field generation part forms on the front end surface of a target can be increased.
  • the relationship of Bm / B0 ⁇ 3 is easily satisfied, and the arrival efficiency of the charged particles to the target can be improved.
  • the magnetic field generation mechanism is an auxiliary magnetic field generation unit disposed on the reference straight line on the side opposite to the magnetic field generation unit with respect to the target, and the magnetic field generation unit is the target of the target It is desirable to further include an auxiliary magnetic field generator that forms a magnetic field including a component in the same direction as a component extending in a direction parallel to the reference straight line of the magnetic field formed on the tip surface on the tip surface.
  • the magnetic field generated by the magnetic field generation unit and the magnetic field generated by the auxiliary magnetic field generation unit can be strengthened from each other on the tip surface of the target. For this reason, the magnetic field formed on the tip surface of the target is increased, and the above relationship of Bm / B0 ⁇ 3 is easily satisfied.
  • a magnetic field component in a direction orthogonal to the tip surface of a magnetic field formed by the auxiliary magnetic field generation unit on the tip surface of the target is set to be larger than a magnetic field component in a direction parallel to the tip surface. It is desirable that According to this configuration, the magnetic field formed by the auxiliary magnetic field generation unit on the tip surface of the target includes many magnetic field components that easily guide charged particles to the object side. For this reason, the complementary effect of the magnetic field which a magnetic field generation part generates and the magnetic field which an auxiliary magnetic field generation part generates can be heightened.
  • the angle ⁇ formed by the magnetic field lines and the reference straight line is set in a range of 10 ° ⁇ ⁇ ⁇ 30 °. According to this configuration, it is possible to prevent the arc spot from moving on the tip surface of the target. For this reason, it is suppressed that discharge
  • the distal end surface is a circle centered on the reference straight line, the diameter of the distal end surface centered on the reference straight line is d (mm), and the inner diameter of the magnetic field generating unit is D (mm).
  • d the diameter of the distal end surface centered on the reference straight line
  • D the inner diameter of the magnetic field generating unit
  • the magnetic field generation mechanism is a sub-magnetic field generation unit that is disposed between the magnetic field generation unit and the object and has a cylindrical shape with the reference straight line as an axis, and together with the magnetic field generation unit It is desirable to further have a sub-magnetic field generator that forms the magnetic field extending from the tip surface toward the object side.
  • the secondary magnetic field generation unit forms a magnetic field together with the magnetic field generation unit, so that the arrival efficiency of the charged particles to the object can be increased.
  • the axial component of the magnetic field on the reference straight line is the magnetic field generation. It is desirable that the magnetic field generation unit and the sub magnetic field generation unit form a magnetic field that gradually decreases from the part side toward the object side. According to this configuration, since an extreme value is not formed in the axial component of the magnetic field from the magnetic field generation unit side to the object side, it is possible to further increase the arrival efficiency of charged particles to the object.

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  • Chemical Kinetics & Catalysis (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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Abstract

L'invention concerne une source de vaporisation à arc capable d'augmenter l'efficacité d'atteinte, à laquelle des particules chargées émises par une cible atteignent un sujet. Une source de vaporisation à arc 1A qui émet des particules chargées en direction d'un matériau de base prédéterminé S est pourvue d'une cible T et d'un mécanisme de génération de champ magnétique (2) comprenant une bobine électromagnétique (20). La bobine électromagnétique (20) est disposée entre la cible T et le matériau de base S, et elle présente une forme cylindrique ayant une droite de référence CL en tant que centre axial. Si on appelle B0 (en Gauss) l'amplitude d'un champ magnétique à l'intersection entre la droite de référence CL et une surface d'émission de cible TF de la cible T, et Bm (en Gauss) la valeur maximale du champ magnétique entre la surface d'émission de cible TF et le matériau de base S, ledit champ magnétique étant sur la droite de référence CL, alors la relation Bm/B0 ≤ 3 est satisfaite.
PCT/JP2017/042287 2016-11-28 2017-11-24 Source de vaporisation à arc WO2018097263A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194167A (ja) * 1988-09-26 1990-07-31 Kobe Steel Ltd 真空アーク蒸着装置及び方法
JPH04236770A (ja) * 1991-01-17 1992-08-25 Kobe Steel Ltd 真空アーク蒸着のアークスポットの制御方法及び蒸発源
JP2015054995A (ja) * 2013-09-12 2015-03-23 株式会社神戸製鋼所 潤滑性と耐摩耗性に優れた硬質皮膜およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194167A (ja) * 1988-09-26 1990-07-31 Kobe Steel Ltd 真空アーク蒸着装置及び方法
JPH04236770A (ja) * 1991-01-17 1992-08-25 Kobe Steel Ltd 真空アーク蒸着のアークスポットの制御方法及び蒸発源
JP2015054995A (ja) * 2013-09-12 2015-03-23 株式会社神戸製鋼所 潤滑性と耐摩耗性に優れた硬質皮膜およびその製造方法

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