WO2018094905A1 - 在mems传感器上形成过滤网的方法以及mems传感器 - Google Patents

在mems传感器上形成过滤网的方法以及mems传感器 Download PDF

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Publication number
WO2018094905A1
WO2018094905A1 PCT/CN2017/075595 CN2017075595W WO2018094905A1 WO 2018094905 A1 WO2018094905 A1 WO 2018094905A1 CN 2017075595 W CN2017075595 W CN 2017075595W WO 2018094905 A1 WO2018094905 A1 WO 2018094905A1
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Prior art keywords
filter
photoresist
mesh
forming
structural material
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English (en)
French (fr)
Inventor
詹竣凯
周宗燐
邱冠勳
蔡孟锦
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Goertek Inc
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Goertek Inc
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Priority to US15/739,913 priority Critical patent/US10233075B2/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00309—Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/10—Microfilters, e.g. for gas or fluids

Definitions

  • the present invention relates to the field of microelectromechanical technology, and more particularly to a method of forming a filter on a MEMS sensor and a filter MEMS sensor formed in accordance with the method.
  • Microelectromechanical devices typically include a package structure and a MEMS chip disposed in the package structure.
  • the package structure has through holes to enable the MEMS chip to collect various information of the external environment, such as vibration, light, temperature, humidity, air pressure, and the like.
  • the microelectromechanical device of this structure has a through hole for easy access of water and dust into the package structure. It is usually used to set the filter in the collection hole to achieve waterproof and dustproof.
  • a method of forming a filter on a MEMS sensor includes the following steps:
  • the mesh of the filter mesh is formed by a yellow lithography method or a nanoimprint method.
  • the method includes:
  • the photoresist is removed to form the filter.
  • the method includes:
  • the photoresist is removed to form the filter.
  • the structural material forming the filter mesh is a metal, ceramic or polymer material.
  • the structural material is deposited using a low temperature vacuum sputtering process.
  • the mesh of the filter has a size of 30 ⁇ m or less.
  • the method includes:
  • the filter web formed by heat etching is allowed to cure.
  • the method includes:
  • the filter web formed by heat etching is allowed to cure.
  • a MEMS sensor includes an outer package structure formed by enclosing a substrate and an outer casing, and a MEMS chip disposed inside the outer package structure, the outer package structure having a connection between the MEMS chip and an external space A collecting hole is provided on the collecting hole according to the above method.
  • the inventors of the present invention have found that in the prior art, with the miniaturization of MEMS sensor devices, the existing filter network setting method is ineffective and cannot meet the production requirements. Therefore, the technical tasks or technical problems to be solved by the present invention are solved.
  • the present invention is a new technical solution that has never been or is not expected by those skilled in the art.
  • FIG. 1 is a flow chart of a method of forming a filter in accordance with an embodiment of the present invention.
  • FIGS. 2-4 are schematic views of a method of forming a filter screen according to an embodiment of the present invention.
  • FIG. 5 is a schematic structural view of a MEMS sensor according to an embodiment of the present invention.
  • Figure 6 is a flow chart showing a first method of forming a filter on the bonding surface of a thermal dissociation tape in accordance with an embodiment of the present invention.
  • Figure 7 is a flow chart showing a second method of forming a filter on the bonding surface of a thermal dissociation tape in accordance with an embodiment of the present invention.
  • Figure 8 is a flow chart showing a third method of forming a filter on the bonding surface of a thermal dissociation tape in accordance with an embodiment of the present invention.
  • Figure 9 is a flow chart showing a fourth method of forming a filter on the bonding surface of a thermal dissociation tape in accordance with an embodiment of the present invention.
  • 11 filter; 12: thermal dissociation tape; 13: substrate; 14: film; 15: self-adhesive web; 16: acquisition hole; 17: PCB; 18: MEMS chip; 19: outer casing; 20: ASIC chip; 21: bonding wire.
  • the present invention provides a method of forming a filter 11 on a MEMS sensor. As shown in Figure 1, the method includes the following steps:
  • a detachable tape is provided on the substrate 13, and a filter 11 is formed on the bonding surface of the detachable tape.
  • the substrate 13 may be, but not limited to, a wafer or glass, and the surface for carrying the load should have a set flatness to ensure that the filter 11 is flat.
  • the detachable tape refers to a tape that can be dissociated under the set conditions to facilitate the transfer of the filter 11 to other components.
  • the tape 12 is thermally dissociated and the tape is dissociated under heating conditions.
  • the structural material needs to have sufficient strength to ensure that the filter 11 has anti-blowing ability. In the manufacturing process, dust, water, and the like are inevitably attached to the MEMS chip 18, the PCB board 17, and the like.
  • the structural material used to form the filter 11 may be, but not limited to, a metal, ceramic or polymer material.
  • the mesh of the filter 11 is formed by a yellow lithography method or a nanoimprint method.
  • the above method has the characteristics of convenient operation and good molding quality, and the mesh of the formed filter 11 is fine and uniform.
  • the mesh of the filter 11 has a size of 30 ⁇ m or less, the mesh of this size can more effectively prevent the entry of dust and water, and the filter 11 can have sufficient structural strength.
  • the filter 11 is transferred onto the film 14 to form a self-adhesive web 15.
  • the adhesion between the filter screen 11 and the thermal dissociation tape 12 is reduced by heating to facilitate transfer onto the film 14, and the film 14 is formed into a self-adhesive web 15.
  • the filter 11 on the self-adhesive web 15 is transferred and bonded to the collection aperture 16 of the MEMS sensor.
  • an adhesive is applied around the collecting hole 16, and the adhesive force of the adhesive and the filter 11 is greater than the bonding force of the filter 11 and the film 14; then the film 14 is uncovered.
  • the filter 11 is transferred and bonded to the collection hole 16.
  • the filter screen 11 can be bonded to the inside or the outside of the collection hole 16 according to actual needs.
  • the filter 11 formed by the method has a fine and uniform mesh and a high yield.
  • the method is suitable for large-scale, industrial production.
  • Figure 6 shows a method of forming a filter 11 on the bonding surface of the thermal dissociation tape 12, in accordance with an embodiment of the present invention, comprising:
  • a photoresist is provided on the bonding surface of the thermal dissociation tape 12.
  • the photoresist is cured under set lighting conditions to be etched in subsequent steps.
  • the photoresist is etched using a yellow lithography method to form a first open pattern that matches the skeleton of the filter 11.
  • the area blocked by the reticle is the mesh formation area, and the etched area is the first hollow pattern.
  • the yellow light lithography method has the characteristics of high formation precision.
  • a structural material is deposited within the first hollow pattern to form a filter screen 11.
  • the structural material is deposited by a low temperature vacuum sputtering method.
  • the structural material filled into the first hollow pattern forms a network structure, that is, the skeleton of the filter screen 11.
  • the area occupied by the photoresist does not deposit a structural material, and the mesh of the filter 11 is formed when the photoresist is removed.
  • the structural material is metal, SiO 2 or the like to ensure the structural strength of the filter 11.
  • the structural material is deposited using a low temperature vacuum sputtering process. This method ensures a uniform structure of the deposited structural material.
  • the photoresist is removed to form a filter screen 11.
  • the position occupied by the original photoresist forms a mesh.
  • the formed filter 11 is transferred to the film 14 for use.
  • the thermal dissociation tape 12 is dissociated from the filter screen 11 by heating to transfer the filter screen 11 to On the film 14.
  • This method can form a fine filter screen 11. Moreover, the filter screen 11 is integrally formed, and the structural material of the filter screen 11 is not damaged during the manufacturing process, and the structural strength of the filter screen 11 is ensured.
  • FIG. 7 shows a second method of forming a filter 11 on the bonding surface of the thermal dissociation tape 12 according to an embodiment of the present invention, which includes:
  • a structural material is deposited on the bonding surface of the thermal dissociation tape 12.
  • a structural material is deposited by a low temperature vacuum sputtering method to ensure uniformity of the structural material.
  • the structural material is metal, SiO 2 , etc.
  • a photoresist is disposed on the surface of the structural material.
  • the photoresist is etched using a yellow lithography method to form a second hollow pattern that matches the mesh of the filter screen 11.
  • the area blocked by the reticle is the area of the skeleton of the filter 11, and the portion to be etched is the area where the mesh is formed.
  • the method can ensure the fineness and uniformity of the mesh.
  • the structural material is etched according to the second hollow pattern to form a mesh.
  • the excess portion of the structural material may be removed by dry or wet etching to form a mesh.
  • the dry method is, for example, a particle beam etching method.
  • the wet method is, for example, an etching liquid etching method.
  • the photoresist is removed to form a filter screen 11.
  • the difference from the method shown in FIG. 6 is that in the method, the structural material is first deposited, then the photoresist is disposed, and the mesh pattern of the filter 11 is formed on the photoresist, and then the etching method is performed. Form a mesh.
  • the method can also form a fine and uniform mesh, and can limit the size of the mesh within a set range to ensure good dustproof and waterproof effects.
  • the photoresist has a set structural strength after curing, and can be directly used as a structural material of the filter 11. This method eliminates the use of other structural materials, reduces the processing steps, reduces the processing difficulty, and improves the yield.
  • Figure 8 shows a third method of forming a filter 11 on the bonding surface of the thermal dissociation tape 12 of the embodiment of the present invention, comprising:
  • a photoresist is provided on the bonding surface of the thermal dissociation tape 12.
  • the structural material is SU-8 Or SU-8 3000 series photoresist.
  • the photoresist is most sensitive to near-ultraviolet illumination in the 350-400 nm band. Even in the case of very thick photoresist illumination, the illumination is uniform and a vertical edge can be obtained.
  • other types of photoresists can be used as long as they have good thermal stability, etching resistance, high resolution, high depth and wideness.
  • the photoresist is etched by a yellow lithography method to form a filter 11.
  • the excess structural material is etched away by a yellow lithography method to form a mesh.
  • the filter 11 formed by etching is heated to be solidified to finally form the filter 11.
  • Figure 9 shows a fourth method of forming a filter 11 on the bonding surface of the thermal dissociation tape 12 of the embodiment of the present invention, comprising:
  • the photoresist is embossed by a nanoimprint method to form a filter 11.
  • the mesh is embossed on the structural material by a nanoimprint method.
  • the filter 11 formed by etching is heated to be solidified to finally form the filter 11.
  • the filter 11 may be formed on the bonding surface of the thermal dissociation tape 12 by other methods as long as the mesh requirements and strength requirements of the filter 11 can be satisfied.
  • the present invention also provides a MEMS sensor. This sensor can be used to sense parameters of the external environment.
  • the MEMS sensor includes an outer package structure formed by enclosing the substrate and the outer casing 19, and a MEMS chip 18 disposed inside the outer package structure.
  • the MEMS chip 18 may be a MEMS microphone chip for acoustic-electric conversion, a pressure chip for sensing pressure, a humidity chip for sensing humidity, a temperature chip for sensing temperature, and a gas type for sensing. Detecting chips and the like.
  • the outer package structure has an acquisition aperture 16 that connects the MEMS chip 18 and the external space on which the filter screen 11 is provided in accordance with the method provided by the present invention.
  • the collection aperture 16 is used to collect various environmental information. For example, temperature, pressure, sound, humidity, gas type, and the like.
  • the senor is a MEMS microphone.
  • the substrate is a PCB board 17, and an acquisition hole 16 is disposed on the PCB board 17.
  • the back cavity of the MEMS chip 18 is disposed opposite to the collection hole 16.
  • a filter screen 11 is disposed inside the collection hole 16, and the filter screen 11 covers the collection hole 16.
  • the filter 11 is provided in accordance with the method provided by the present invention.
  • the sensor is also provided with an ASIC chip 20, which is signally connected to the MEMS chip 18 by bond wires 21.
  • the ASIC chip 20 is signally connected to the PCB board 17.
  • the collection aperture can also be provided on the housing (not shown) as long as the environmental parameters can be provided for the MEMS chip.
  • the filter can also be placed outside the collection hole as long as it is easy to install.
  • the MEMS sensor has good waterproof and dustproof effects and long service life.

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
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  • General Health & Medical Sciences (AREA)
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Abstract

一种在MEMS传感器上形成过滤网的方法以及MEMS传感器。该方法包括以下步骤：在基材(13)上设置可解离胶带(12)，在可解离胶带(12)的粘接面上形成过滤网(11)；将所述过滤网(11)转印到薄膜(14)上，以形成自粘卷材(15)；将位于所述自粘卷材(15)上的所述过滤网(11)转移粘接到MEMS传感器的采集孔(16)上。该方法形成的过滤网(11)，网孔细密、均匀，并且良品率高。此外，该方法适用于大规模生产。

Description

在MEMS传感器上形成过滤网的方法以及MEMS传感器 技术领域
本发明涉及微机电技术领域，更具体地，涉及一种在MEMS传感器上形成过滤网的方法以及设置有依照该方法形成的过滤网MEMS传感器。
背景技术
随着科技的进步，消费性电子产品轻薄化和短小化已经成为目前的发展趋势。所有与外界接触的电子产品在设计开发时都需要考虑到环境适应性的问题。电子产品的防尘、防水是越来越受到人们的重视。
微机电设备通常包括封装结构和设置在封装结构中的MEMS芯片。封装结构具有通孔，以使MEMS芯片能够采集外界环境的各种信息，例如振动、光线、温度、湿度、气压等。然而，这种结构的微机电设备具有通孔使用时水和尘土容易进入到封装结构中。通常采用在采集孔设置过滤网的方式达到防水、防尘的目的。
然而，随着MEMS传感器件微型化导致防水、防尘设计越来越困难。并且现有针对MEMS传感器的防尘、防水工艺过于复杂，成本高，通用性差，防尘防水效果差。无法满足微型化传感器的生产需求。
发明内容
本发明的一个目的是提供一种在MEMS传感器上形成过滤网的方法的新技术方案。
根据本发明的第一方面，提供了一种在MEMS传感器上形成过滤网的方法。该方法包括以下步骤：
在基材上设置可解离胶带，在可解离胶带的粘接面上形成过滤网；
将所述过滤网转印到薄膜上，以形成自粘卷材；
将位于所述自粘卷材上的所述过滤网转移粘接到MEMS传感器的采集 孔上。
可选地，所述过滤网的网孔采用黄光微影方法或者纳米压印方法形成。
可选地，在形成过滤网步骤中包括：
在所述可解离胶带的粘接面上设置光刻胶；
采用黄光微影方法对所述光刻胶进行刻蚀，以形成与所述过滤网的骨架相匹配的第一镂空图形；
在所述第一镂空图形内沉积结构材料；
移除光刻胶以形成所述过滤网。
可选地，在形成过滤网步骤中包括：
在所述可解离胶带的粘接面上沉积结构材料；
在所述结构材料的表面上设置光刻胶；
采用黄光微影方法对所述光刻胶进行刻蚀，以形成与所述过滤网的网孔相匹配的第二镂空图形；
根据第二镂空图形对所述结构材料进行刻蚀，以形成网孔；
移除光刻胶以形成所述过滤网。
可选地，形成所述过滤网的结构材料为金属、陶瓷或者高分子材料。
可选地，采用低温真空溅镀方法沉积所述结构材料。
可选地，所述过滤网的网孔的尺寸小于等于30μm。
可选地，在形成过滤网步骤中包括：
在所述可解离胶带的粘接面上设置光刻胶；
采用黄光微影方法对所述光刻胶进行刻蚀，以形成所述过滤网；
加热刻蚀形成的所述过滤网，以使其固化。
可选地，在形成过滤网步骤中包括：
在所述可解离胶带的粘接面上设置光刻胶；
采用纳米压印方法对所述光刻胶进行压印，以形成所述过滤网；
加热刻蚀形成的所述过滤网，以使其固化。
根据本发明的另一方面，提供一种MEMS传感器。该传感器包括由基板和外壳围合形成的外部封装结构，以及设置在所述外部封装结构的内部的MEMS芯片，所述外部封装结构具有连通所述MEMS芯片和外部空间的采 集孔，在所述采集孔上根据上述的方法设置有所述过滤网。
本发明的发明人发现，在现有技术中，随着MEMS传感器件微型化，现有的过滤网设置方法效果差且无法满足生产需求因此，本发明所要实现的技术任务或者所要解决的技术问题是本领域技术人员从未想到的或者没有预期到的，故本发明是一种新的技术方案。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1是本发明实施例的形成过滤网的方法的流程图。
图2-4是本发明实施例的形成过滤网的方法的示意图。
图5是本发明实施例的MEMS传感器的结构示意图。
图6是本发明实施例的第一种在热解离胶带的粘接面上形成过滤网的方法的流程图。
图7是本发明实施例的第二种在热解离胶带的粘接面上形成过滤网的方法的流程图。
图8是本发明实施例的第三种在热解离胶带的粘接面上形成过滤网的方法的流程图。
图9是本发明实施例的第四种在热解离胶带的粘接面上形成过滤网的方法的流程图。
图中，11：过滤网；12：热解离胶带；13：基材；14：薄膜；15：自粘卷材；16：采集孔；17：PCB板；18：MEMS芯片；19：外壳；20：ASIC芯片；21：键合引线。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、 数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
为了至少解决上述技术问题之一，本发明提供一种在MEMS传感器上形成过滤网11的方法。如图1所示，该方法包括以下步骤：
在基材13上设置可解离胶带，在可解离胶带的粘接面上形成过滤网11。如图2所示，基材13可以是但不局限于晶圆或者玻璃，应保证用于承载的表面具有设定的平整度，以保证过滤网11平整。可解离胶带是指在设定条件下能够解离的胶带，以便于过滤网11转移到其他元件上。例如，热解离胶带12，这种胶带在加热条件下发生解离。结构材料需要具有足够的强度，以保证过滤网11具有抗吹气能力。在制作过程中，MEMS芯片18、PCB板17等不可避免的会附着灰尘、水等。在封装过程中，需要将灰尘、水等吹除，气体从采集孔16进入，因此需要过滤网11具备足够的抗吹气能力，以避免在吹气过程中受到损伤。用于形成过滤网11的结构材料可以是但不局限于金属、陶瓷或者高分子材料。
优选的是，过滤网11的网孔采用黄光微影方法或者纳米压印方法形成。上述方法具有操作方便，成型质量好的特点，并且形成的过滤网11的网孔细密、均匀。为了达到更好的防尘和防水效果。优选的是，过滤网11的网孔的尺寸小于等于30μm，该尺寸的网孔可以更有效的阻止灰尘和水的进入，并且可以使过滤网11具有足够的结构强度。
将过滤网11转印到薄膜14上，以形成自粘卷材15。如图3所示，在 该步骤中，通过加热的方式使过滤网11与热解离胶带12之间的粘结力减小，以便于转印到薄膜14上，薄膜14做成自粘卷材15。使用时，只需将自粘胶带上的过滤网11粘接到设定位置即可
将位于自粘卷材15上的过滤网11转移粘接到MEMS传感器的采集孔16上。如图4所示，在该步骤中，首先在采集孔16周围涂抹粘结剂，粘结剂与过滤网11的粘结力大于过滤网11与薄膜14的结合力；然后揭开薄膜14将过滤网11转移粘接到采集孔16上。根据实际需要，过滤网11可以粘接到采集孔16的内侧或者外侧。
该方法形成的过滤网11，网孔细密、均匀，并且良品率高。
此外，该方法适用于大规模、工业化生产。
在胶带的粘接面上形成过滤网11的方法有多种。
图6示出了本发明实施例的一种在热解离胶带12的粘接面上形成过滤网11的方法，其包括：
在热解离胶带12的粘接面上设置光刻胶。在设定的光照条件下，光刻胶固化，以便在后续的步骤中进行刻蚀。
采用黄光微影方法对光刻胶进行刻蚀，以形成与过滤网11的骨架相匹配的第一镂空图形。在该步骤中，被光罩阻挡的区域为网孔形成区域，被腐蚀掉的区域为第一镂空图形。黄光微影方法具有形成精度高的特点。
在第一镂空图形内沉积结构材料，以形成过滤网11。在该步骤中，采用低温真空溅镀的方法沉积结构材料。填充到第一镂空图形中的结构材料形成网络结构,即过滤网11的骨架。被光刻胶占据的区域不会沉积上结构材料，当光刻胶移除后形成过滤网11的网孔。可选的是，结构材料为金属、SiO2等，以保证过滤网11的结构强度。
优选地，采用低温真空溅镀方法沉积结构材料。这种方法可以保证沉积的结构材料结构均匀。
移除光刻胶以形成过滤网11。在该步骤中，移除光刻胶后，原来光刻胶占据的位置形成了网孔。
接下来，将成型后的过滤网11转移到薄膜14上以备用。在该步骤中，通过加热的方法使热解离胶带12与过滤网11解离，以使过滤网11转移到 薄膜14上。
这种方法可以形成精细的过滤网11。并且过滤网11一体成型，在制作过程中没有对过滤网11的结构材料进行破坏，保证了过滤网11的结构强度。
图7示出了本发明实施例的第二种在热解离胶带12的粘接面上形成过滤网11的方法，其包括：
在热解离胶带12的粘接面上沉积结构材料。例如，采用低温真空溅镀方法沉积结构材料，以保证结构材料的均匀。可选的是，结构材料为金属、SiO2等
在结构材料的表面上设置光刻胶。
采用黄光微影方法对光刻胶进行刻蚀，以形成与过滤网11的网孔相匹配的第二镂空图形。在该步骤中，被光罩阻挡的区域为过滤网11的骨架的区域，被刻蚀掉的部分为形成网孔的区域。该方法可以保证网孔的细密程度、均匀。
根据第二镂空图形对结构材料进行刻蚀，以形成网孔。在该步骤中，可以采用干式或者湿式刻蚀方法去除结构材料多余的部分以形成网孔。干式方法例如是粒子束刻蚀方法。湿式方法例如是刻蚀液刻蚀方法。
移除光刻胶以形成过滤网11。
与图6中所示的方法相比不同之处在于，在该方法中首先沉积结构材料，然后设置光刻胶，并在光刻胶上形成过滤网11的网孔图形，再通过刻蚀方法形成网孔。
该方法同样能形成细密均匀的网孔，并且可以将网孔的尺寸限定在设定范围内，以保证良好的防尘和防水效果。
此外，光刻胶固化后具有设定的结构强度，可以直接作为过滤网11的结构材料。这种方式省去了其他结构材料的使用，减少了加工工序，降低了加工难度，提高了良品率。
图8示出了本发明实施例的第三种在热解离胶带12的粘接面上形成过滤网11的方法，其包括：
在热解离胶带12的粘接面上设置光刻胶。优选的是，结构材料为SU-8 或者SU-8 3000系列光刻胶。该光刻胶对近紫外350-400nm波段照射最为敏感。即使在非常厚的光刻胶照射情况下，照射均匀一致，也可以获得垂直边。当然，也可以采用其他类型的光刻胶，只要具有良好的热稳定性、抗刻蚀性、高分辨率、高深宽等性能即可。
采用黄光微影方法对光刻胶进行刻蚀，以形成过滤网11。在该步骤中，通过黄光微影方法将多余的结构材料刻蚀掉，以形成网孔。
加热刻蚀形成的过滤网11，以使其固化，最终形成过滤网11。
图9示出了本发明实施例的第四种在热解离胶带12的粘接面上形成过滤网11的方法，其包括：
在热解离胶带12的粘接面上设置光刻胶；
采用纳米压印方法对光刻胶进行压印，以形成过滤网11。在该步骤中，通过纳米压印方法在结构材料上压印出网孔。
加热刻蚀形成的过滤网11，以使其固化，最终形成过滤网11。
当然，还可以通过其他方法在热解离胶带12的粘接面上形成过滤网11，只要能够满足过滤网11的网孔要求、强度要求即可。
此外，本发明还提供一种MEMS传感器。该传感器可以用于感测外部环境的参数。
MEMS传感器包括由基板和外壳19围合形成的外部封装结构，以及设置在外部封装结构的内部的MEMS芯片18。该MEMS芯片18可以是用于声电转换的MEMS麦克风芯片、用于感测压力的压力芯片、用于感测湿度的湿度芯片、用于感测温度的温度芯片、用于感测气体种类的检测芯片等。
外部封装结构具有连通MEMS芯片18和外部空间的采集孔16，在采集孔16上根据本发明提供的方法设置有过滤网11。采集孔16用于采集各种环境信息。例如温度、压力、声音、湿度、气体种类等。
在一个例子中，如图5所示，传感器为MEMS麦克风。基板为PCB板17，在PCB板17上设置有采集孔16，MEMS芯片18的背腔与采集孔16相对设置。在采集孔16的内侧设置有过滤网11，过滤网11覆盖采集孔16。该过滤网11根据本发明提供的方法设置而成。此外，该传感器还设置有ASIC芯片20，ASIC芯片20通过键合引线21与MEMS芯片18信号连接。 ASIC芯片20与PCB板17信号连接。
当然，采集孔也可以设置在外壳上(未示出)，只要能为MEMS芯片提供环境参数即可。过滤网也可以设置在采集孔的外侧，只要方便安装即可。
该MEMS传感器具有良好的防水、防尘效果，并且使用寿命长的特点。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (10)

  1. 一种在MEMS传感器上形成过滤网的方法，其特征在于，包括以下步骤：
    在基材(14)上设置可解离胶带，在可解离胶带的粘接面上形成过滤网(11)；
    将所述过滤网(11)转印到薄膜(14)上，以形成自粘卷材(15)；
    将位于所述自粘卷材(15)上的所述过滤网(11)转移粘接到MEMS传感器的采集孔(16)上。
  2. 根据权利要求1所述的方法，其特征在于，所述过滤网(11)的网孔采用黄光微影方法或者纳米压印方法形成。
  3. 根据权利要求1或者2所述的方法，其特征在于，在形成过滤网(11)步骤中包括：
    在所述可解离胶带的粘接面上设置光刻胶；
    采用黄光微影方法对所述光刻胶进行刻蚀，以形成与所述过滤网(11)的骨架相匹配的第一镂空图形；
    在所述第一镂空图形内沉积结构材料；
    移除光刻胶以形成所述过滤网(11)。
  4. 根据权利要求1-3中的任意一项所述的方法，其特征在于，在形成过滤网(11)步骤中包括：
    在所述可解离胶带的粘接面上沉积结构材料；
    在所述结构材料的表面上设置光刻胶；
    采用黄光微影方法对所述光刻胶进行刻蚀，以形成与所述过滤网(11)的网孔相匹配的第二镂空图形；
    根据第二镂空图形对所述结构材料进行刻蚀，以形成网孔；
    移除光刻胶以形成所述过滤网(11)。
  5. 根据权利要求1-4中的任意一项所述的方法，其特征在于，形成所述过滤网(11)的结构材料为金属、陶瓷或者高分子材料。
  6. 根据权利要求1-5中的任意一项所述的方法，其特征在于，采用低温真空溅镀方法沉积所述结构材料。
  7. 根据权利要求1-6中的任意一项所述的方法，其特征在于，所述过滤网(11)的网孔的尺寸小于等于30μm。
  8. 根据权利要求1-7中的任意一项所述的方法，其特征在于，在形成过滤网(11)步骤中包括：
    在所述可解离胶带的粘接面上设置光刻胶；
    采用黄光微影方法对所述光刻胶进行刻蚀，以形成所述过滤网(11)；
    加热刻蚀形成的所述过滤网(11)，以使其固化。
  9. 根据权利要求1-8中的任意一项所述的方法，其特征在于，在形成过滤网(11)步骤中包括：
    在所述可解离胶带的粘接面上设置光刻胶；
    采用纳米压印方法对所述光刻胶进行压印，以形成所述过滤网(11)；
    加热刻蚀形成的所述过滤网(11)，以使其固化。
  10. 一种MEMS传感器，其特征在于，包括由基板和外壳(19)围合形成的外部封装结构，以及设置在所述外部封装结构的内部的MEMS芯片(18)，所述外部封装结构具有连通所述MEMS芯片(18)和外部空间的采集孔(16)，在所述采集孔(16)上根据如权利要求1-9中的任意之一所述的方法设置有所述过滤网(11)。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10233075B2 (en) * 2016-11-22 2019-03-19 Goertek Inc. Method for forming filter net on MEMS sensor and MEMS sensor

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10687147B2 (en) * 2016-07-11 2020-06-16 Goertek Inc. MEMS microphone and electronic apparatus
CN106291858B (zh) * 2016-08-30 2019-07-23 豪威光电子科技（上海）有限公司 镜头模组的制备方法
CN110730411B (zh) * 2018-07-17 2021-05-07 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法、mems麦克风形成方法
CN109321893B (zh) * 2018-10-16 2020-11-27 清华大学 石墨烯保护膜的制备方法、石墨烯保护膜及其使用方法
JP7284606B2 (ja) * 2019-03-22 2023-05-31 新科實業有限公司 Ｍｅｍｓパッケージ、ｍｅｍｓマイクロフォンおよびｍｅｍｓパッケージの製造方法
CN110298989A (zh) * 2019-05-14 2019-10-01 北京戴纳实验科技有限公司 一种实验室安防装置
CN110726427A (zh) * 2019-10-28 2020-01-24 青岛歌尔微电子研究院有限公司 防尘结构及其制作方法
CN110775939A (zh) * 2019-10-31 2020-02-11 歌尔股份有限公司 微纳米结构组件制造方法、以及以该法制造的微纳米结构组件
CN110950299A (zh) * 2019-10-31 2020-04-03 歌尔股份有限公司 微纳米结构组件制造方法、以及以该法制造的微纳米结构组件
CN110775940B (zh) * 2019-10-31 2023-08-15 潍坊歌尔微电子有限公司 Mems传感器组件制造方法、以及以该法制造的mems传感器组件
CN110759313B (zh) * 2019-10-31 2023-07-25 潍坊歌尔微电子有限公司 Mems传感器组件制造方法以及以该法制造的传感器组件
CN111031460B (zh) * 2019-12-27 2024-06-25 歌尔微电子有限公司 一种mems芯片、制备方法及包括其的mems麦克风
CN111050258A (zh) * 2019-12-31 2020-04-21 歌尔股份有限公司 防尘结构、麦克风封装结构以及电子设备
CN111131984B (zh) * 2019-12-31 2025-02-18 潍坊歌尔微电子有限公司 防尘结构、麦克风封装结构以及电子设备
CN112689431A (zh) * 2020-12-21 2021-04-20 苏州长风航空电子有限公司 一种三轴向mems芯片装配装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004349416A (ja) * 2003-05-21 2004-12-09 Nikon Corp Ｍｅｍｓの製造方法
CN202957950U (zh) * 2012-11-26 2013-05-29 山东共达电声股份有限公司 抗气压吹击声电传感器
US20140002964A1 (en) * 2012-06-28 2014-01-02 Qualcomm Mems Technologies, Inc. Mems device encapsulation with corner or edge seals
CN106044698A (zh) * 2015-04-15 2016-10-26 英飞凌科技股份有限公司 用于封装的mems器件的系统和方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6955900B1 (en) * 1993-02-02 2005-10-18 The Scripps Research Institute Methods for producing polypeptide binding sites, monoclonal antibodies and compositions thereof
JP2001297549A (ja) * 2000-04-10 2001-10-26 Nitto Denko Corp 制振材連続供給体
WO2006120896A1 (ja) * 2005-05-02 2006-11-16 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物およびレジストパターン形成方法
US8189851B2 (en) * 2009-03-06 2012-05-29 Emo Labs, Inc. Optically clear diaphragm for an acoustic transducer and method for making same
ES2717903T3 (es) * 2009-10-16 2019-06-26 Graphene Square Inc Procedimiento de transferencia de rollo a rollo de grafeno, rollo de grafeno producido por el procedimiento, y equipo de transferencia de rollo a rollo para grafeno
CN201533390U (zh) * 2009-10-26 2010-07-21 歌尔声学股份有限公司 一种微型麦克风
WO2011058721A1 (ja) * 2009-11-13 2011-05-19 株式会社 日立ハイテクノロジーズ 細胞接着性光制御基材，細胞の解析分別方法及び細胞の解析分別装置
CN103391502A (zh) * 2013-06-25 2013-11-13 歌尔声学股份有限公司 麦克风防水薄片的制造方法
CN103369450A (zh) * 2013-06-25 2013-10-23 歌尔声学股份有限公司 麦克风中使用的防水薄片的制造方法
US9951163B2 (en) * 2014-01-31 2018-04-24 Mitsubishi Gas Chemical Company, Inc. (Meth)acrylate compound, (meth)acrylic copolymer and photosensitive resin composition containing same
CN104495821B (zh) * 2014-12-16 2016-06-15 重庆墨希科技有限公司 一种单层连续石墨烯薄膜卷材的制备方法及装置
CN106744664B (zh) * 2016-11-22 2019-01-18 歌尔股份有限公司 在mems传感器上形成过滤网的方法以及mems传感器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004349416A (ja) * 2003-05-21 2004-12-09 Nikon Corp Ｍｅｍｓの製造方法
US20140002964A1 (en) * 2012-06-28 2014-01-02 Qualcomm Mems Technologies, Inc. Mems device encapsulation with corner or edge seals
CN202957950U (zh) * 2012-11-26 2013-05-29 山东共达电声股份有限公司 抗气压吹击声电传感器
CN106044698A (zh) * 2015-04-15 2016-10-26 英飞凌科技股份有限公司 用于封装的mems器件的系统和方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10233075B2 (en) * 2016-11-22 2019-03-19 Goertek Inc. Method for forming filter net on MEMS sensor and MEMS sensor

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