WO2018092611A1 - Élément magnétique, mémoire à skyrmions, unité centrale de traitement lsi équipée d'une mémoire à skyrmions, dispositif d'enregistrement de données, dispositif de traitement de données et dispositif de communication de données - Google Patents

Élément magnétique, mémoire à skyrmions, unité centrale de traitement lsi équipée d'une mémoire à skyrmions, dispositif d'enregistrement de données, dispositif de traitement de données et dispositif de communication de données Download PDF

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Publication number
WO2018092611A1
WO2018092611A1 PCT/JP2017/039834 JP2017039834W WO2018092611A1 WO 2018092611 A1 WO2018092611 A1 WO 2018092611A1 JP 2017039834 W JP2017039834 W JP 2017039834W WO 2018092611 A1 WO2018092611 A1 WO 2018092611A1
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WIPO (PCT)
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thin film
magnetic
skyrmion
closed path
transistor
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PCT/JP2017/039834
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English (en)
Japanese (ja)
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金子　良夫
十倉　好紀
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国立研究開発法人理化学研究所
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Publication of WO2018092611A1 publication Critical patent/WO2018092611A1/fr

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetic element capable of generating, transferring, batch erasing and detecting a skillion, a skillion memory, a central processing processing LSI equipped with a skillion memory, a data recording device, a data processing device and a data communication device.
  • Patent Document 1 a skirmion memory having a skirmion memory circuit capable of generating, transferring, and deleting skirmions is known (for example, Patent Document 1).
  • Patent Document 1 International Publication No. 2016/002806
  • the skyrmion detection circuit has a problem of low sensitivity.
  • a thin-film closed-path magnetic thin film capable of generating skyrmions having a width W and a length L on the plane of the thin film, and both ends of the length L are connected to each other and have a single closed path shape for circular transfer of skillmions, and a closed path shape magnetic thin film in which a plurality of skillmions are generated, transferred and erased, and a closed path shape magnetic thin film skillion Skillion transfer unit for transferring and batch erasing, skillmion generation unit for generating skillion in closed path shape magnetic thin film, detection element for detecting skillmion, closed path shape magnetic thin film, skillion
  • a magnetic element comprising a transfer unit, a skillion generation unit, or a transistor unit for selecting a detection element.
  • a plurality of magnetic elements in which the magnetic elements according to the first aspect are arranged in a matrix, and a closed path-shaped magnetic thin film provided facing the closed path-shaped magnetic thin film.
  • a skyrmion memory including a magnetic field generator capable of applying a magnetic field is provided.
  • a skirmion memory-equipped central processing LSI having the skirmion memory according to the second aspect and a central information processing arithmetic logic circuit element in the same chip.
  • a data recording device including the skyrmion memory according to the second aspect.
  • a data processing apparatus including the skyrmion memory according to the second aspect.
  • a data communication device comprising a skyrmion memory according to the second aspect.
  • FIG. 5 is a phase diagram showing the magnetic field dependence of the chiral magnetic phase used in the closed path-shaped magnetic thin film 11.
  • 1 shows an exemplary configuration of a magnetic element 10 according to a first embodiment. An example of the skillion generation part 35 of the magnetic element 10 which concerns on Example 1 is shown. The generation of the skyrmion 40 by the local magnetic field by the U-shaped current path is shown.
  • FIG. 1 An example of the structure of the skyrmion memory 100 which concerns on Example 1 is shown.
  • 2 shows an exemplary configuration of a magnetic element 10 according to a second embodiment.
  • generation electrode 82 is shown.
  • FIG. 3 is a schematic diagram illustrating a configuration example of a data recording device 300.
  • FIG. 3 is a schematic diagram illustrating a configuration example of a data processing device 400.
  • FIG. 3 is a schematic diagram illustrating a configuration example of a communication device 500.
  • FIG. 3 is a schematic diagram illustrating a configuration example of a data recording device 300.
  • FIG. 3 is a schematic diagram illustrating a configuration example of a data processing device 400.
  • FIG. 3 is a schematic diagram illustrating a configuration example of a communication device 500.
  • a magnetic material that can form skyrmions is a chiral magnetic material.
  • a chiral magnetic body is a magnetic body with a magnetic ordered phase in which the magnetic moment arrangement when no external magnetic field is applied rotates on a spiral with respect to the direction of travel of the magnetic moment. By applying an external magnetic field, the chiral magnetic material becomes a ferromagnetic phase through a crystal phase in which skyrmions are arranged in a lattice shape.
  • FIG. 1 shows an example of a skyrmion 40 formed on the closed path-shaped magnetic thin film 11.
  • the relationship between the direction of the current flowing through the closed path-shaped magnetic thin film 11 and the transfer direction of the skillion 40 is shown.
  • each arrow indicates the direction of the magnetic moment in the skyrmion 40.
  • the x axis and the y axis are axes orthogonal to each other, and the z axis is an axis orthogonal to the xy plane.
  • the closed path-shaped magnetic thin film 11 has a plane parallel to the xy plane.
  • a magnetic moment directed in every direction arranged in the closed path-shaped magnetic thin film 11 constitutes the skyrmion 40.
  • the direction of the magnetic field applied to the closed path shape magnetic thin film 11 is the plus z direction.
  • the magnetic moment on the outermost periphery of the skillion 40 of this example is directed in the plus z direction.
  • the outermost periphery refers to the circumference of a magnetic moment that faces the same direction as the external magnetic field shown in FIG.
  • the magnetic moment is arranged so as to rotate in a spiral shape from the outermost circumference to the inside. Further, the direction of the magnetic moment gradually changes from the plus z direction to the minus z direction toward the center of the vortex with the spiral rotation.
  • Skyrmion 40 is a nanoscale magnetic structure having a spiral structure of magnetic moment.
  • the magnetic moment constituting the skyrmion 40 is composed of the same magnetic moment in the z direction. That is, the skyrmion 40 has a magnetic structure composed of magnetic moments in the same direction from the front surface to the back surface in the depth direction (z direction) of the closed path-shaped magnetic thin film 11.
  • FIG. 2A to FIG. 2D are schematic diagrams showing skyrmions 40 having different helicities ⁇ (that is, how the magnetic moment is twisted).
  • ⁇ that is, how the magnetic moment is twisted
  • the skillmion 40 has a magnetic moment in the ⁇ z direction at the center.
  • FIG. 2E shows how to take the coordinates of the magnetic moment (right-handed system). Since a right-handed, n z axis relative to n x axis and n y axis, taken from the rear of the sheet in front of the orientation. Further, FIG. 2E shows the relationship between the shading and the direction of the magnetic moment.
  • the Skyrmion number Nsk characterizes Skyrmion 40, which is a nanoscale magnetic structure having a spiral structure.
  • the following [Equation 1] and [Equation 2] express the number of skirmions Nsk.
  • the polar angle ⁇ (r) between the magnetic moment and the z-axis is a continuous function of the distance r from the center of the skyrmion 40.
  • the polar angle ⁇ (r) changes from ⁇ to zero or from zero to ⁇ when r is changed from 0 to ⁇ .
  • the vector quantity n (r) represents the direction of the magnetic moment of the skyrmion 40 at the position r.
  • the shading indicates the direction of the magnetic moment.
  • Each arrow in FIGS. 2A to 2D indicates a magnetic moment that is separated from the center of the skyrmion 40 by a predetermined distance.
  • the magnetic structure shown in FIGS. 2A to 2D is in a state that defines a skyrmion 40.
  • the lightest shaded area shows a magnetic moment in the forward direction from the back side of the paper. In the figure, the magnetic moment is shown in white.
  • the darkest region shows the magnetic moment in the direction from the front of the paper to the back.
  • the direction. 2D corresponds to the skillion 40 of FIG. 1.
  • the magnetic structures of the four examples shown in FIGS. 2A to 2D seem to be different, but are topologically the same magnetic structures.
  • the skyrmion 40 having the structure shown in FIGS. 2A to 2D exists stably once generated, and functions as a carrier for transmitting information in the closed path-shaped magnetic thin film 11 to which an external magnetic field is applied.
  • FIG. 3 is a phase diagram showing the magnetic field dependence of the chiral magnetic substance magnetic phase used in the closed path-shaped magnetic thin film 11.
  • the chiral magnetic substance is a magnetic substance that changes from a helical magnetic phase to a skyrmion crystal phase (SkX) with a magnetic field strength Hsk, and from a skyrmion crystal phase (SkX) to a ferromagnetic phase with a higher magnetic field strength Hf.
  • a plurality of skyrmions 40 are arranged in the close-packed structure and are generated in the xy plane.
  • a is a lattice constant of the closed-path-shaped magnetic thin film 11
  • Dm is a physical constant specific to a substance by the magnitude of the Jaroshinsky-Moriya interaction. Therefore, the skyrmion diameter ⁇ is a substance specific constant.
  • the skyrmion diameter ⁇ is, for example, 70 nm for FeGe and 18 nm for MnSi.
  • FIG. 1 shows the relationship between the direction of current flowing through the closed-path-shaped magnetic thin film 11 and the transfer direction of the skyrmion 40.
  • the mechanism of the motion of the skillion 40 in the closed-path shape magnetic thin film 11 will be described.
  • a current is passed through the closed-path shape magnetic thin film 11 in a direction from the outer peripheral electrode 12 toward the inner peripheral electrode 14.
  • it is better to consider an electron flow in the opposite direction to the current That is, consider a case where an electron flow is allowed to flow from the inner peripheral electrode 14 to the outer peripheral electrode 12.
  • Skillion 40 receives two forces from the electron flow. One is a force in the same direction as the electron flow. The other is the power created by the balance between confinement and Magnus forces.
  • the first force due to the electron flow presses the skyrmion 40 against the outer peripheral side end of the closed path-shaped magnetic thin film 11.
  • the second force transfers the skyrmion 40 in the direction of the arrow transfer that is substantially perpendicular to the electron flow.
  • An arrangement in which the direction of the transfer current of the skyrmion 40 and the transfer direction of the skyrmion 40 are substantially vertical is defined as a horizontal transfer arrangement.
  • transfer can be performed at a speed 10 to 100 times higher than the transfer speed of the skillion 40 in the vertical transfer arrangement when the transfer current and the direction of the skyrmion 40 are substantially parallel.
  • the current flowing in the closed path-shaped magnetic thin film 11 in the direction from the outer peripheral electrode 12 to the inner peripheral electrode 14 is made larger than that during the transfer of the skyrmion 40, thereby existing in the closed path-shaped magnetic thin film 11 1.
  • a plurality of skill mions 40 can be erased collectively.
  • the skyrmion 40 receives a force having a magnitude corresponding to the current flowing in the closed path-shaped magnetic thin film 11 in the direction opposite to the current flowing in the closed-path shaped magnetic thin film 11 (that is, in the direction of electron flow). .
  • the outer peripheral electrode 12 and the inner peripheral electrode 14 constitute a skillmion transfer unit that transfers or erases the skillmions 40 of the closed path-shaped magnetic thin film 11.
  • the outer electrode 12 when the magnitude of the magnetic exchange interaction of the closed-path-shaped magnetic thin film 11 is J and the current density of the current when circularly transferring the plurality of skyrmions 40 is Jd, the outer electrode 12 and By setting the current density Jc of the current flowing between the inner peripheral electrodes 14 to Jc ⁇ 2 ⁇ Jd, a plurality of skill-mions 40 to be circularly transferred are collectively erased.
  • FIG. 4 shows an example of the configuration of the magnetic element 10 according to the first embodiment.
  • the magnetic element 10 shown in FIG. 4 can generate the skyrmion 40, perform circular transfer, collective erasure, and detection.
  • the magnetic element 10 stores (stores) information using the skyrmion 40.
  • the presence or absence of the skillion 40 at a predetermined position of the closed path-shaped magnetic thin film 11 corresponds to 1-bit information.
  • the position where the skillion 40 exists is indicated by a solid circle
  • the position where the skillion 40 does not exist is indicated by a broken circle.
  • the magnetic element 10 of this example includes a closed-path-shaped magnetic thin film 11, an outer peripheral electrode 12, an inner peripheral electrode 14, a current path 13, a generation unit 35, a detection element 15, a nonmagnetic insulator thin film 161, and transistors Tr1, Tr2, Tr3. Is provided.
  • a magnetic field generator (not shown) is provided outside the magnetic element 10.
  • the transistors Tr1, Tr2, and Tr3 are examples of a transistor unit for selecting the closed path shape magnetic thin film 11, the skillmion transfer unit having the outer peripheral electrode 12 and the inner peripheral electrode 14, the generation unit 35, or the detection element 15. is there.
  • the outer peripheral electrode 12 is connected to the transfer line 101.
  • the inner peripheral electrode 14 is connected to the transfer line 99.
  • the outer peripheral electrode 12 and the inner peripheral electrode 14 are made of a conductive nonmagnetic thin film metal such as Cu, W, Ti, TiN, Al, Pt, or Au.
  • the transfer line 101 is an example of a first transfer line.
  • the transfer line 99 is an example of a second transfer line.
  • the gate terminals of the transistors Tr1, Tr2, Tr3 are connected to a common word line 97.
  • FIG. 4 shows (x, y) coordinates.
  • the closed path-shaped magnetic thin film 11 exhibits at least a skyrmion crystal phase and a ferromagnetic phase according to the applied magnetic field.
  • a magnetic body having a skyrmion crystal phase and a ferromagnetic phase is a necessary condition that the skyrmion 40 is a magnetic body that can be generated in the closed-path-shaped magnetic thin film 11.
  • the closed-path-shaped magnetic thin film 11 is a chiral magnetic body, and is formed of FeGe or MnSi having a B20 structure and CoZn or CoZnMn having a ⁇ Mn structure. It is made of FeGe, MnSi and CoZn.
  • the closed path-shaped magnetic thin film 11 may have a laminated structure of a magnetic material and a nonmagnetic material.
  • a magnetic thin film having a laminated thin film structure of a magnetic thin film and a non-magnetic thin film is a laminated magnetic thin film in which the magnetic moment of a magnetic thin film in contact with the non-magnetic thin film is modulated by the spin-orbit interaction of the non-magnetic thin film. is there.
  • the closed-path-shaped magnetic thin film 11 can be formed on a magnetic thin film formed using MBE (Molecular Beam Epitaxy), sputtering, or the like using an exposure apparatus, an etching apparatus, or a CMP (Chemical Mechanical Planarization) method.
  • the closed path shape magnetic thin film 11 has a thin film shape.
  • the closed path shape magnetic thin film 11 has a width W and a length L on the plane of the thin film, and has a closed path shape in which both ends of the length L are connected. Both ends of the closed path shape magnetic thin film 11 shown in FIG.
  • the length L is a length that goes through the center of the width W and goes around the closed path once.
  • the closed path-shaped magnetic thin film 11 may be surrounded by a nonmagnetic insulating material or the like generally used in a semiconductor process.
  • a nonmagnetic insulator thin film 161 is provided between the closed path shape magnetic thin film 11 and the closed path shape magnetic thin film 11 of the adjacent magnetic element 10.
  • the closed path-shaped magnetic thin film 11 may have a thickness of about 10 times or less the diameter ⁇ of the skyrmion 40, for example.
  • the width W of the closed-path shape magnetic thin film 11 is preferably W> 0.5 ⁇ , where ⁇ is the diameter of the skyrmion 40. If the width W is smaller than this, the skyrmion 40 cannot exist in the closed path-shaped magnetic thin film 11.
  • the width W of the closed path-shaped magnetic thin film 11 may be larger than the diameter ⁇ of the skyrmion 40.
  • the outer peripheral electrode 12 and the inner peripheral electrode 14 are connected in the extending direction of the closed path-shaped magnetic thin film 11.
  • the extending direction of the closed path-shaped magnetic thin film 11 refers to a direction parallel to the xy plane.
  • the outer peripheral electrode 12 and the inner peripheral electrode 14 may be laminated on the end of the closed path-shaped magnetic thin film 11.
  • the outer peripheral electrode 12 and the inner peripheral electrode 14 may have a thin layer shape. Further, the outer peripheral electrode 12 and the inner peripheral electrode 14 may have the same thickness as the closed path-shaped magnetic thin film 11.
  • the direction of the current flowing from the outer peripheral electrode 12 to the inner peripheral electrode 14 is indicated by a white arrow.
  • the skillion 40 is transferred in the direction of the hatched arrow.
  • the transistor Tr1 is provided between the inner peripheral electrode 14 and the transfer line 99.
  • the transistor Tr1 is a field effect transistor (FET: Field Effect Transistor).
  • FET Field Effect Transistor
  • the gate terminal of the transistor Tr1 is connected to the word line 97.
  • the transistor Tr1 prevents a leak current from flowing through the magnetic element 10 when the corresponding magnetic element 10 is not selected.
  • the transistor Tr1 may be provided between the outer peripheral electrode 12 and the transfer line 101.
  • the transfer line 99 is an example of a second transfer line.
  • the transfer line 101 is an example of a first transfer line.
  • FIG. 5 shows an example of the skillion generation unit 35 of the magnetic element 10 according to the first embodiment.
  • the generation of the skyrmion 40 by the local magnetic field by the U-shaped current path is shown.
  • the nonmagnetic insulator thin film 17 is formed between the current path 13 and the closed path shape magnetic thin film 11.
  • the nonmagnetic insulator thin film 17 of this example is an example of a second nonmagnetic insulator thin film.
  • the current path 13 has a nonmagnetic metal thin film.
  • the nonmagnetic metal thin film in the current path 13 is an example of a third nonmagnetic metal thin film.
  • a current path 13 is provided in order to generate the skyrmion 40 in the closed path shape magnetic thin film 11.
  • the closed-path-shaped magnetic thin film 11 is in a ferromagnetic state due to the magnetic field from the lower magnetic field generator 20.
  • the magnetic moment of the closed path shape magnetic thin film 11 is indicated by an arrow. The arrow points in the z direction in the ferromagnetic state.
  • the current path 13 in this example is a current path including a U-shaped current path in which a current path is formed in a U-shape.
  • the U-shaped current path 13 is provided so as to surround an end region including the end of the closed path-shaped magnetic thin film 11.
  • the U-shape may be a shape including a right angle as in this example as well as a shape having rounded corners.
  • the combination of the U-shaped current path and the end portion forms a closed region in the upper layer of the closed path-shaped magnetic thin film 11.
  • the current path 13 is connected to the write line 95 and the write line 96.
  • Write line 95 is an example of a first write line
  • write line 96 is an example of a second write line.
  • the current path 13 is formed of a nonmagnetic metal material such as Cu, W, Ti, Al, Pt, Au, TiN, or AlSi.
  • the U-shaped current path is an example of the generation unit 35 for generating the skyrmion 40.
  • the region surrounded by the end of the closed path-shaped magnetic thin film 11 and the U-shaped current path is referred to as the end region A of the closed-path shaped magnetic thin film 11.
  • the magnetic field strength in the end region A is Ha.
  • the current path 13 of this example crosses the end of the closed path shape magnetic thin film 11 at least once from the non-magnetic side to the closed path shape magnetic thin film 11 side in the xy plane, and the closed path shape magnetic thin film It has a continuous conductive path crossing at least once from the 11 side to the non-magnetic material side.
  • the U-shaped current path surrounds a region including the end of the closed path-shaped magnetic thin film 11. A generated current is passed through the current path 13 in the direction shown in FIG.
  • the U-shaped generated current generates a second magnetic field in the minus z direction in the end region. Since the second magnetic field induced by the U-shaped current is opposite to the direction of the uniform first magnetic field from the magnetic field generator 20, the magnetic field Ha in the plus z direction in the end region is weakened. As a result, the skyrmion 40 having a spiral magnetic moment can be generated in the end region A. When the current path 13 does not include the end region A, the skyrmion 40 cannot be generated.
  • the shape of the current path 13 may be a coil shape wound in multiple layers like a coil.
  • one end region A may be formed in the closed-path magnetic thin film 11 of the magnetic element 10.
  • the number of write lines 95 for writing data to the magnetic element 10 can be reduced. Since the skillmion 40 is transferred round, the next skillmion 40 is generated at the timing when the generated skillmion 40 is transferred by a predetermined distance. As a result, a large number of skyrmion 40 rows can be formed in the closed path-shaped magnetic thin film 11 of the magnetic element 10.
  • the transistor Tr2 is provided between at least one of the generator 35 and the write line 95 or between the generator 35 and the write line 96.
  • the transistor Tr2 of this example is provided between one end of the current path 13 and the write line 96.
  • the transistor Tr2 is a field effect transistor.
  • the gate terminal of the transistor Tr2 is connected to the word line 97. Since the magnetic element 10 of this example includes the transistor Tr2, it is possible to prevent data from being erroneously written to the magnetic element 10 that is not a target of writing.
  • the skyrmion 40 is present at the writing position of the closed path-shaped magnetic thin film 11. Need to be. For example, the written position of the skyrmion 40 of the closed path shape magnetic thin film 11 is transferred to the writing position by a transfer current. In this case, it is difficult to accurately place the skillion 40 at the writing position. If the position of the skillmion 40 is shifted even a little, the skillmion 40 is generated by removing the skillmion 40 to the side. As a result, data may be written erroneously.
  • the detection element 15 is a tunnel magnetoresistive element (TMR element).
  • TMR element tunnel magnetoresistive element
  • the detection element 15 of this example is provided between the outer peripheral electrode 12 and the inner peripheral electrode 14 on the closed path shape magnetic thin film 11.
  • the detection element 15 has a laminated structure of a nonmagnetic insulator thin film 151 formed on the closed path shape magnetic thin film 11 and a magnetic metal thin film 152 formed on the nonmagnetic insulator thin film 151.
  • the periphery of the detection element 15 may be covered with a nonmagnetic insulator thin film.
  • the nonmagnetic insulator thin film may be formed of the same material as the nonmagnetic insulator thin film 151 and the nonmagnetic insulator thin film 17.
  • the nonmagnetic insulator thin film 151 is an example of a first nonmagnetic insulator thin film.
  • the magnetic metal thin film 152 is an example of a first magnetic metal thin film.
  • the detection element 15 measures the resistance value of the nonmagnetic insulator thin film 151.
  • the resistance value of the nonmagnetic insulator thin film 151 shows the maximum value.
  • the resistance value of the nonmagnetic insulator thin film 151 is Indicates the minimum value.
  • the high resistance (H) state and the low resistance (L) state of the detection element 15 correspond to the presence or absence of the skyrmion 40 and correspond to information “1” and “0” stored in the memory cell.
  • the detecting element 15 utilizes an effect in which the resistance value of the nonmagnetic insulating thin film 151 depends on the state of the magnetic moment of the two upper and lower magnetic metal thin films.
  • the magnetic metal thin film 152 constituting the detection element 15 has a magnetic moment in the z direction due to the magnetic field from the magnetic field generator 20.
  • the magnetic moment of the closed path-shaped magnetic thin film 11 is vortex-like.
  • the quantum effect on the tunnel electron flow that flows through the nonmagnetic insulator thin film 151 is reduced.
  • the tunnel current flowing through the nonmagnetic insulator thin film 151 is reduced. That is, the resistance value of the nonmagnetic insulator thin film 151 shows the maximum value.
  • the magnetic moment M in the z direction that is the same as the magnetic field H of the magnetic field generator 20 is generated in the closed path-shaped magnetic thin film 11.
  • the magnetic metal thin film 152 also generates a magnetic moment M in the z direction that is the same as the magnetic field H of the magnetic field generator 20.
  • a tunnel current flows through the nonmagnetic insulator thin film 151 between the magnetic metal thin film 152 and the closed path-shaped magnetic thin film 11 due to the quantum effect. That is, the resistance value of the nonmagnetic insulator thin film 151 shows a minimum value.
  • the resistance value of the nonmagnetic insulator thin film 151 is higher in the case where the skyrmion 40 is present than in the case where the skyrmion 40 is not present. By detecting this resistance value, the presence or absence of skyrmion 40 can be detected, and information stored in magnetic element 10 can be read.
  • the magnetic metal thin film is a magnetic metal thin film made of Co, Ni, Fe or the like, or a laminated magnetic metal thin film made of these magnetic metal thin films.
  • the detection element 15 of this example was provided in contact with the upper surface of the closed path shape magnetic thin film 11.
  • the detection element 15 may be a detection element formed so that the nonmagnetic insulator thin film 151 is sandwiched between the magnetic thin film and the soft magnetic thin film.
  • the direction of the magnetic moment of the soft magnetic thin film is the direction of the magnetic moment corresponding to the magnetic structure of the closed path-shaped magnetic thin film 11. If the detection element having this structure is formed immediately above the closed-path-shaped magnetic thin film 11, the skyrmion 40 can be detected with higher sensitivity.
  • the transistor Tr3 is provided between the detection element 15 and the bit line 94.
  • the transistor Tr3 is a field effect transistor.
  • the gate terminal of the transistor Tr3 is connected to the word line 97.
  • the transistor Tr3 can increase the resistance value between the transistor Tr3 and the detection element 15 infinitely when the corresponding magnetic element 10 is not selected. Thereby, only the resistance value of the detection element 15 of the selected magnetic element 10 can be read.
  • the corresponding bit line 94 of the magnetic element 10 from which data is to be read is selected, and a constant current is passed through the bit line 94.
  • the voltage of the selected bit line 94 is determined by the resistance value indicated by the detection element 15 of the magnetic element 10 in which the transistor Tr3 is turned on. All other magnetic elements 10 connected to the selected bit line 94 have infinite resistance because the transistor Tr3 is off. As a result, the voltage of the selected bit line 94 is a voltage based only on the resistance value of the detection element 15 of the selected magnetic element 10.
  • the magnetic element 10 of this example preferably includes all of the transistors Tr1, Tr2, and Tr3 in order to prevent leakage current, prevent erroneous writing, and detect the presence or absence of skyrmions with high sensitivity.
  • the gate terminals of the transistors Tr1, Tr2, and Tr3 are provided on the common word line 97. As a result, the number of word lines 97 can be reduced.
  • FIG. 5 shows the magnetic field generator 20 which is a component of the skyrmion memory 100 according to the first embodiment.
  • FIG. 5 shows (x, y, z) coordinates.
  • the magnetic field generator 20 applies a first magnetic field to the closed path magnetic thin film 11.
  • the magnetic field generator 20 applies a first magnetic field to the closed path-shaped magnetic thin film 11 that is substantially perpendicular to the surface of the thin-film closed path-shaped magnetic thin film 11 and makes the closed path-shaped magnetic thin film 11 a ferromagnetic phase. Apply.
  • the closed path-shaped magnetic thin film 11 has a surface parallel to the xy plane.
  • the direction of the magnetic moment of the magnetic field generator 20 is indicated by a white arrow.
  • the direction of the magnetic moment of the white arrow is the z direction.
  • the direction of the first magnetic field generated from the magnetic field generator 20 and applied to the closed path shape magnetic thin film 11 is the plus z direction.
  • the magnetic field generation unit 20 may be provided to face the back surface of the closed path shape magnetic thin film 11.
  • the magnetic field generation unit 20 may be separated from or in contact with the closed path-shaped magnetic thin film 11. When the magnetic field generation unit 20 is a magnetic metal, the magnetic field generation unit 20 is preferably separated from the closed-path shape magnetic thin film 11.
  • FIG. 6 shows an example of the configuration of the skyrmion memory 100 according to the first embodiment.
  • the skyrmion memory 100 of this example uses the magnetic element 10 that generates and erases the skyrmions 40 using the current path 13.
  • the magnetic element 10 of this example generates a skyrmion 40 by a current-induced local magnetic field.
  • the skyrmion memory 100 includes a plurality of magnetic elements 10, a plurality of transfer lines 99, a plurality of transfer lines 101, a plurality of write lines 95, a plurality of write lines 96, a plurality of bit lines 94, a plurality of word lines 97, A plurality of switches 181, a plurality of switches 182, a plurality of switches 183, a plurality of switches 184, a plurality of switches 185, a plurality of switches 186, and a plurality of detection circuits 98 are provided.
  • the transfer line 99 in this example is connected to the inner peripheral electrode 14 via the transistor Tr1.
  • the transfer line 99 of this example is provided in common for the plurality of magnetic elements 10.
  • the transfer line 101 is connected to the outer peripheral electrode 12.
  • the transfer line 101 of this example is connected to the outer peripheral electrode 12 without going through the transistors Tr1, Tr2, Tr3. Note that the transfer line 101 of this example is provided in common for the plurality of magnetic elements 10.
  • the write line 95 is connected to the generation unit 35 via the transistor Tr2. A current for generating the skyrmion 40 is supplied to the corresponding magnetic element 10. That is, the write line 95 functions as a skyrmion generation line. Note that the write line 95 of this example is provided in common for the plurality of magnetic elements 10.
  • the bit line 94 is connected to the detection element 15 via the transistor Tr3. A voltage corresponding to the presence or absence of the skyrmion 40 of the corresponding magnetic element 10 is generated. That is, the bit line 94 functions as a skyrmion detection line.
  • the bit line 94 of this example is provided in common for the plurality of magnetic elements 10.
  • the word line 97 selects the magnetic element 10 that generates, batch erases, and detects the skyrmion 40.
  • the word line 97 in this example is connected to the gate terminals of the transistors Tr1, Tr2, and Tr3. As a result, the corresponding magnetic elements 10 can be collectively selected, and the selection lines can be greatly reduced. Note that the word line 97 of this example is provided in common for the plurality of magnetic elements 10.
  • a switch 181 is provided for each bit line 94.
  • the switch 182 is provided for each write line 95.
  • the switch 183 is provided for each write line 96.
  • the switch 184 is provided for each word line 97.
  • the switch 185 is provided for each transfer line 101.
  • the switch 186 is provided for each transfer line 99.
  • the switches 181, 182, 183, 184, 185, and 186 are field effect transistors.
  • the switches 186 and 185 of the left transfer line 99 and the upper transfer line 101 are turned on. Further, the switches 184 of the upper word line 97 are simultaneously turned on. A gate voltage is applied to the transistors Tr1, Tr2, Tr3 of the upper left magnetic element 10, and the transistors Tr1, Tr2, Tr3 are turned on. The switch 182 of the left write line 95 is also turned on.
  • a transfer current from the upper transfer line 101 flows between the outer peripheral electrode 12 and the inner peripheral electrode 14 of only the upper left magnetic element 10. No transfer current flows through the upper right magnetic element 10 connected to the upper transfer line 101.
  • the switch 186 of the right transfer line 99 is turned off. Also, no transfer current flows through the lower right magnetic element 10.
  • the sequence of the skyrmions 40 circulates on the closed path shape magnetic thin film 11 by the transfer current.
  • the interval between the skilllions 40 in the column of the skillion 40 is constant.
  • the transfer current is turned off. While the interval of the skillion 40 in the column of the skillion 40 remains constant, the round transfer is stopped and the state of the skillion 40 is maintained. That is, the bit information is kept without supplying current.
  • the skyrmion memory 100 functions as a non-volatile memory.
  • the switches 186 and 185 of the left transfer line 99 and the upper transfer line 101 are turned on. Further, the switches 184 of the upper word line 97 are simultaneously turned on. A gate voltage is applied to the transistors Tr1, Tr2, Tr3 of the upper left magnetic element 10, and the transistors Tr1, Tr2, Tr3 are turned on. A batch erase current having a predetermined magnitude is applied from the upper transfer line 101. A batch erase current flows from the outer peripheral electrode 12 of the upper left magnetic element 10 to the inner peripheral electrode 14. As a result, all the skyrmions 40 in the upper left magnetic element 10 can be erased.
  • This batch erase method can erase all the bit information of the selected magnetic element 10 at a time, and is an excellent method for shortening the erase time required for rewriting the bit information. It is also possible to erase a plurality of magnetic elements 10 simultaneously. As a result, the skyrmion memory 100 can be initialized in a short time.
  • the switches 186 and 185 of the left transfer line 99 and the upper transfer line 101 are turned on. Further, the switches 184 of the upper word line 97 are simultaneously turned on. A gate voltage is applied to the transistors Tr1, Tr2, Tr3 of the upper left magnetic element 10, and the transistors Tr1, Tr2, Tr3 are turned on. By these operations, a transfer current from the upper transfer line 101 flows between the outer peripheral electrode 12 and the inner peripheral electrode 14 of only the upper left magnetic element 10. The skyrmion 40 of the upper left magnetic element 10 makes a transfer lap.
  • the switch 181 of the left bit line 94 is turned on. A predetermined constant current is passed through the bit line 94.
  • the bit line 94 Since the transistor Tr3 of the upper left magnetic element 10 is on, the bit line 94 generates a voltage corresponding to the skyrmion 40 that has passed under the detection element 15 of the upper left magnetic element 10.
  • the left detection circuit 98 reads out voltages corresponding to “0” and “1”.
  • At least one detection element 15 of this example may be provided for one magnetic element 10. Thereby, the number of detection elements 15 and detection bit lines can be reduced in each stage.
  • the detection element 15 of this example is provided in the transfer direction of the skillmion 40 in the closed path-shaped magnetic thin film 11 rather than the generation unit 35.
  • the detection element 15 can shorten the time from when the generation unit 35 generates the skyrmion 40 until it is detected. Thereby, the magnetic element 10 can generate and detect the skyrmion 40 more efficiently.
  • the detection circuit 98 of this example is connected to the bit line 94 and detects the voltage of the bit line 94.
  • the detection circuit 98 may be provided for each bit line 94 or may be provided for a plurality of bit lines 94 in common.
  • the detection circuit 98 in this example amplifies the voltage of the bit line 94 and detects the presence or absence of the skyrmion 40.
  • the detection circuit 98 includes an input resistor Rin, a feedback resistor Rf, an amplifier circuit C1, and a voltage comparison circuit C2.
  • the voltage of the bit line 94 is amplified by the ratio of the input resistance Rin and the feedback resistance Rf.
  • the voltage comparison circuit C2 amplifies the differential voltage by inputting both the output voltage of the amplification circuit C1 and the reference voltage Vref.
  • the voltage comparison circuit C2 outputs “1” when the output voltage of the amplification circuit C1 is larger than the reference voltage Vref.
  • the voltage comparison circuit C2 outputs “0” when the output voltage of the amplifier circuit C1 is smaller than the reference voltage Vref.
  • the detection circuit 98 of this example is an absolute value reading method that detects the presence or absence of the skillion 40 by comparing the voltage value of the bit line 94 with a predetermined reference voltage Vref. For this reason, the detection circuit 98 of this example has high detection accuracy of the skyrmion 40. In particular, in the absolute value reading method, since the output can be easily amplified, noise resistance is improved.
  • FIG. 7 shows a configuration of a skillion memory 600 according to the first comparative example.
  • the skyrmion memory 600 of this example does not include the transistor Tr1, the transistor Tr2, and the transistor Tr3.
  • the skyrmion memory 600 of the comparative example 1 does not have the transistor Tr1.
  • the skillmion memory 600 of Comparative Example 1 selects the upper left magnetic element 10 by turning on the switch 185 and the switch 186, and transfers the skillmion 40 in the direction from the outer peripheral electrode 12 to the inner peripheral electrode 14. Apply current.
  • the transfer current is indicated by a black arrow.
  • the leakage current is indicated by a white arrow.
  • a leakage current flows from the outer peripheral electrode 12 of the upper right magnetic element 10 to the inner peripheral electrode 14 via the closed path-shaped magnetic thin film 11.
  • the leakage current of the skyrmion memory 600 in this example consumes extra power.
  • the resistance value of the closed-path-shaped magnetic thin film 11 that is a metal material is small, the leakage current value becomes large. Since the skyrmion memory 600 has a large number of magnetic elements 10 in a matrix, if the leak path occurs in each magnetic element 10, the power of the skyrmion memory 600 as a whole is consumed.
  • the skyrmion memory 600 of the comparative example 1 does not have the transistor Tr2.
  • the skyrmion memory 600 selects the write line 95 by turning on the switch 182.
  • the other end of the write line 95 is connected to ground.
  • a generation current for generating the skyrmion 40 is passed through the magnetic element 10.
  • one skirmion 40 is generated in advance in the generation unit 35 in order to prevent the skirmion 40 from being written to the magnetic element 10 that is connected to the write line 95 but not selected. There is a need. If the skillion 40 exists in the generation unit 35, the skillion 40 cannot be further generated.
  • the skyrmions 40 are generated in all the magnetic elements 10 connected to the selected write line 95 and then written to the respective magnetic elements 10. After that, the signal cue skillion 40 is transferred to the generation unit 35. In this way, since the skyrmions 40 are generated for the corresponding magnetic elements 10 and the skyrmions 40 cannot be generated for the magnetic elements 10 that are not selected, erroneous writing is eliminated. However, if the position of the signal heading skyrmion 40 is moved from the generating unit 35 due to noise current from the outer peripheral electrode 12 and the inner peripheral electrode 14 or the like, redundant writing may occur.
  • the transistor Tr2 since the transistor Tr2 is provided in the magnetic element 10, the generated current flows only in the generating unit 35 of the selected magnetic element 10, so that there is no possibility of erroneous writing. Thus, the signal cueing skyrmion 40 may not be in the generation unit 35.
  • the skyrmion memory 600 of Comparative Example 1 does not have the transistor Tr3.
  • the skyrmion memory 600 selects the bit line 94 by turning on the switch 181.
  • the skyrmion memory 600 includes a detection circuit 698.
  • the detection circuit 698 reads the resistance value for each bit line 94 according to the input current.
  • the detection circuit 698 reads bit information in accordance with a change in the read signal. That is, since the skyrmion memory 600 of this example does not have the transistor Tr3, the detection element 15 selects all the magnetic elements 10 connected to the bit line 94.
  • the detection circuit 698 detects the current value of the bit line.
  • current is applied from the outer peripheral electrode 12 to the inner peripheral electrode 14 to transfer and rotate the skillmion 40. At this time, the presence or absence of the skyrmion 40 passing through the portion of the closed path-shaped magnetic thin film 11 below the detection element 15 is detected.
  • the detected current value depends on the presence of the skyrmion 40 below the detection element 15 of the unselected magnetic element 10 connected to the same bit line 94.
  • the detection circuit 698 converts the current into a voltage in the amplifier circuit C1, and outputs “0” or “1” in comparison with the reference voltage Vref in the voltage comparison circuit C2.
  • the detection circuit 698 needs measures such as detecting a signal that changes with a differential value instead of an absolute value.
  • a capacitor is required in parallel with the feedback resistor Rf. As a result, the added differentiating circuit deteriorates noise resistance.
  • the steady current for detection flows only in the detection element 15 of the selected magnetic element 10, so that only the voltage corresponding to the resistance value of the selected detection element 15 can be generated on the bit line 94.
  • the amplification circuit C1 in the detection circuit 98 can set a large amplification factor, and the voltage comparison circuit C2 can output “0” or “1” with high accuracy. As a result, a circuit that detects the presence or absence of skyrmion 40 with high sensitivity to an electrical signal such as noise is configured.
  • the skyrmion memory 100 of this example includes the transistor Tr1, the transistor Tr2, and the transistor Tr3, thereby blocking the leak path through the magnetic element 10, preventing erroneous writing, and the skyrmion 40 with high sensitivity. It can be detected.
  • skyrmion memory 100 When the skyrmion memory 100 is used as an actual device, hundreds to thousands of skyrmions 40 are circulated around one magnetic element 10. Furthermore, a large-scale nonvolatile memory can be realized by arranging millions of magnetic elements 10 in a plane and storing information of several hundred M bits to several G bits. Since many magnetic elements 10 are used, a circuit configuration capable of detecting leakage current interruption, preventing erroneous writing, and detecting skyrmions 40 with high sensitivity is essential.
  • FIG. 8 shows an example of the configuration of the magnetic element 10 using local heat according to the second embodiment.
  • FIG. 9 illustrates an example of the skillion generation unit 35 of the magnetic element 10 according to the second embodiment. The production
  • the magnetic element 10 of this example generates the skyrmion 40 by applying local heat to the closed-path shape magnetic thin film 11.
  • the magnetic element 10 of this example stores bit information using the skyrmion 40.
  • the presence or absence of skirmions 40 in the closed path-shaped magnetic thin film 11 corresponds to 1-bit information.
  • the magnetic element 10 of this example includes a closed-path shape magnetic thin film 11, an outer peripheral electrode 12, an inner peripheral electrode 14, a nonmagnetic insulator thin film 161, a generation electrode 82, a detection element 15, a write line 95, a write line 96, A transfer line 99, a transfer line 101, a word line 97, a transistor Tr1, a transistor Tr2, and a transistor Tr3 are provided. Indicates (x, y) coordinates.
  • the transistor Tr1 is provided between the inner peripheral electrode 14 and the transfer line 99.
  • the transistor Tr1 is a field effect transistor.
  • the gate terminal of the transistor Tr1 is connected to the word line 97.
  • the transistor Tr1 prevents a leak current from flowing through the magnetic element 10 when the corresponding magnetic element 10 is not selected.
  • the transistor Tr1 may be provided between the outer peripheral electrode 12 and the transfer line 101.
  • the transfer line 99 is an example of a second transfer line.
  • the transfer line 101 is an example of a first transfer line.
  • a generation electrode 82 is provided to generate the skyrmion 40 in the closed path-shaped magnetic thin film 11.
  • the closed path-shaped magnetic thin film 11 is in a ferromagnetic state by the magnetic field from the magnetic field generator 20.
  • the magnetic moment of the closed path shape magnetic thin film 11 is indicated by an arrow. The arrow points in the z direction in the ferromagnetic state.
  • the generation electrode 82 is made of the nonmagnetic metal thin film 18 formed on the nonmagnetic insulator thin film 17 provided in contact with the upper part of the closed path shape magnetic thin film 11.
  • the closed path-shaped magnetic thin film 11 functions as an electrode facing the generation electrode 82.
  • a current is passed in a pulse manner between the generation electrode 82 and the closed path-shaped magnetic thin film 11.
  • the closed-path-shaped magnetic thin film 11 is heated by Joule heat generated when a pulse current flows through the nonmagnetic insulating thin film 17.
  • a skyrmion 40 is generated by controlling the energy of the pulse heat.
  • the nonmagnetic insulator thin film 17 is an example of a third nonmagnetic insulator thin film.
  • the nonmagnetic metal thin film 18 is an example of a fourth nonmagnetic metal thin film.
  • the generation electrode 82 in this example is a rectangular nonmagnetic metal thin film 18.
  • the square cross-sectional area of the generation electrode 82 is an area for heating the closed-path-shaped magnetic thin film 11.
  • the square shape may be circular or oval.
  • the length of one end of the square shape of the generation electrode 82 corresponds to the spot size diameter of the local thermal energy.
  • the generation electrode 82 is made of a conductive nonmagnetic metal thin film 18 such as Cu, W, Ti, TiN, Al, Pt, or Au.
  • the transistor Tr2 is provided between the generation electrode 82, which is the third electrode, and the write line 95.
  • the transistor Tr2 is a field effect transistor.
  • the gate terminal of the transistor Tr2 is connected to the word line 97.
  • the transistor Tr2 prevents current from flowing through the generation electrode 82 of the magnetic element 10 other than the magnetic element 10 when the corresponding magnetic element 10 is not selected, and prevents erroneous writing.
  • the signal cueing skyrmion 40 may not be in the generation unit 35.
  • the detection element 15 is a tunnel magnetoresistive element (TMR element) similar to that of the first embodiment.
  • TMR element tunnel magnetoresistive element
  • the detection element 15 of this example is provided between the outer peripheral electrode 12 and the inner peripheral electrode 14 on the closed path-shaped magnetic thin film 11 as in the first embodiment.
  • the transistor Tr3 is provided between the detection element 15 and the bit line 94.
  • the transistor Tr3 is a field effect transistor.
  • the gate terminal of the transistor Tr3 is connected to the word line 97.
  • the transistor Tr3 can increase the resistance value between the transistor Tr3 and the detection element 15 infinitely when the corresponding magnetic element 10 is not selected. Thereby, only the resistance value of the detection element 15 of the selected magnetic element 10 can be read.
  • the corresponding bit line 94 of the magnetic element 10 from which data is to be read is selected, and a constant current is passed through the bit line 94.
  • the voltage of the selected bit line 94 is determined by the resistance value indicated by the detection element 15 of the magnetic element 10 in which the transistor Tr3 is turned on. All other magnetic elements 10 connected to the selected bit line 94 have infinite resistance because the transistor Tr3 is off. As a result, the voltage of the selected bit line 94 is a voltage based on the resistance value of only the TMR element of the selected magnetic element 10.
  • the magnetic element 10 of this example preferably includes all of the transistors Tr1, Tr2, and Tr3 in order to prevent leakage current, prevent erroneous writing, and accurately detect the presence or absence of the skyrmion 40.
  • the gate terminals of the transistors Tr1, Tr2, and Tr3 are provided on the common word line 97. As a result, the number of word lines 97 can be reduced.
  • FIG. 10 shows an example of the structure of the skyrmion memory 100.
  • the skyrmion memory 100 of this example is different from the skyrmion memory 100 according to the first embodiment in that a magnetic element 10 that applies local heat to the closed-path shape magnetic thin film 11 is used.
  • the skyrmion memory 100 includes a plurality of magnetic elements 10, a plurality of transfer lines 99, a plurality of transfer lines 101, a plurality of write lines 95, a plurality of bit lines 94, a plurality of word lines 97, a plurality of switches 181 and a plurality of switches.
  • a switch 182, a plurality of switches 184, a plurality of switches 185, and a plurality of detection circuits 98 are provided.
  • the transfer line 99 is connected to the inner peripheral electrode 14.
  • the transfer line 99 of this example is connected to the inner peripheral electrode 14 via the transistor Tr1.
  • the transfer line 99 of this example is provided in common for the plurality of magnetic elements 10.
  • the transfer line 101 is connected to the outer peripheral electrode 12.
  • the transfer line 101 of this example is connected to the outer peripheral electrode 12 without going through the transistors Tr1, Tr2, Tr3. Note that the transfer line 101 of this example is provided in common for the plurality of magnetic elements 10.
  • the write line 95 is connected to the generation unit 35 via the transistor Tr2. A current for generating the skyrmion 40 is supplied to the corresponding magnetic element 10. That is, the write line 95 functions as a skyrmion generation line. Note that the write line 95 of this example is provided in common for the plurality of magnetic elements 10.
  • the bit line 94 is connected to the detection element 15 via the transistor Tr3. A voltage corresponding to the presence or absence of the skyrmion 40 of the corresponding magnetic element 10 is generated. That is, the bit line 94 functions as a skyrmion detection line.
  • the bit line 94 of this example is provided in common for the plurality of magnetic elements 10.
  • the word line 97 selects the magnetic element 10 that generates, batch erases, and detects the skyrmion 40.
  • the word line 97 in this example is connected to the gate terminals of the transistors Tr1, Tr2, and Tr3. As a result, the corresponding magnetic elements 10 can be collectively selected, and the selection lines can be greatly reduced. Note that the word line 97 of this example is provided in common for the plurality of magnetic elements 10.
  • a switch 181 is provided for each bit line 94.
  • the switch 182 is provided for each write line 95.
  • the switch 184 is provided for each word line 97.
  • the switch 185 is provided for each transfer line 101.
  • the switch 186 is provided for each transfer line 99.
  • the switches 181, 182, 184, 185, 186 are field effect transistors.
  • the method for writing bit information to the magnetic element 10 is basically the same as that in the first embodiment.
  • a transfer current is applied to the selected magnetic element 10.
  • a pulse voltage is applied to the generation electrode 82 of the selected magnetic element 10, and a heat pulse is applied to the closed path-shaped magnetic thin film 11, thereby forming a column of bit information skyrmions 40 in the closed path-shaped magnetic thin film 11.
  • the batch erase method for the skillmions 40 of the selected magnetic element 10 is the same as in the first embodiment.
  • a predetermined batch erasing current may be passed from the outer peripheral electrode 12 to the inner peripheral electrode 14 in the selected magnetic element 10.
  • the method for reading the bit information of the selected magnetic element 10 is also the same as in the first embodiment.
  • the bit line 94 When a predetermined constant current is passed through the bit line 94, the bit line 94 generates a voltage corresponding to the skillion 40 that has passed under the detection element 15 of the selected magnetic element 10.
  • the left detection circuit 98 reads out voltages corresponding to “0” and “1”.
  • At least one detection element 15 in this example may be provided for one magnetic element 10. Thereby, the number of detection elements 15 and detection bit lines can be reduced in each stage.
  • the detection element 15 of this example is provided in the transfer direction of the skyrmion 40 in the closed path-shaped magnetic thin film 11 rather than the generation unit 35 as in the first embodiment.
  • the detection element 15 can shorten the time from when the generation unit 35 generates the skyrmion 40 until it is detected. Thereby, the magnetic element 10 can generate and detect the skyrmion 40 more efficiently.
  • the detection circuit 98 is connected to the bit line 94 and detects the voltage of the bit line 94.
  • the detection circuit 98 may be provided for each bit line 94 or may be provided for a plurality of bit lines 94 in common.
  • the detection circuit 98 in this example amplifies the voltage of the bit line 94 and detects the presence or absence of the skyrmion 40.
  • the detection circuit 98 is the same as that used in the first embodiment.
  • the detection circuit 98 of this example is an absolute value reading method that detects the presence or absence of the skillion 40 by comparing the voltage value of the bit line 94 with a predetermined reference voltage Vref. For this reason, the detection circuit 98 of this example has high detection accuracy of the skyrmion 40.
  • the absolute value reading method since the output can be easily amplified, noise resistance is improved.
  • FIG. 11 shows a skyrmion memory 600 according to the second comparative example.
  • the skyrmion memory 600 of this example does not have the transistor Tr1, the transistor Tr2, and the transistor Tr3.
  • the skyrmion memory 600 of Comparative Example 2 does not have the transistor Tr1. In the skyrmion memory 600 of Comparative Example 2, a part of the transfer current leaks.
  • the skillmion memory 600 of the comparative example 2 selects the upper left magnetic element 10 by turning on the switch 185 and the switch 186, and transfers the skillmion 40 in the direction from the outer peripheral electrode 12 to the inner peripheral electrode 14. Apply current.
  • the transfer current is indicated by a black arrow.
  • the leakage current is indicated by a white arrow. When the transfer current indicated by the black arrow flows, a leakage current flows from the outer peripheral electrode 12 of the upper right magnetic element 10 to the inner peripheral electrode 14 via the closed path-shaped magnetic thin film 11.
  • the leakage current of the skyrmion memory 600 in this example consumes extra power.
  • the resistance value of the closed-path-shaped magnetic thin film 11 that is a metal material is small, the leakage current value becomes large. Since the skyrmion memory 600 has a large number of magnetic elements 10 in a matrix, if the leak path occurs in each magnetic element 10, the power of the skyrmion memory 600 as a whole is consumed.
  • the skyrmion memory 600 of the comparative example 2 does not have the transistor Tr2.
  • the skyrmion memory 600 selects the write line 95 by turning on the switch 182.
  • the other electrode of the write line 95 becomes the outer peripheral electrode 12 or the inner peripheral electrode 14.
  • a generation current for generating the skyrmion 40 is passed through the write line 95 in the magnetic element 10.
  • the skyrmion 40 is generated in the generation unit 35 for all the magnetic elements 10 connected to the selected write line 95 and then written to each magnetic element 10. After that, the signal cue skillion 40 is transferred to the generation unit 35. In this way, since the skyrmions 40 are generated for the corresponding magnetic elements 10 and the skyrmions 40 cannot be generated for the magnetic elements 10 that are not selected, erroneous writing is eliminated. However, if the position of the signal heading skyrmion 40 is moved from the generating unit 35 due to noise current from the outer peripheral electrode 12 and the inner peripheral electrode 14 or the like, redundant writing may occur.
  • the signal cueing skyrmion 40 may not be in the generation unit 35.
  • the skyrmion memory 600 of Comparative Example 2 does not have the transistor Tr3. Since the transistor Tr3 is not provided, the detection element 15 selects all the magnetic elements 10 connected to the bit line 94.
  • the detection circuit 698 converts the current value flowing through the bit line into a voltage, and detects the skyrmion 40 by comparing it with a reference voltage. The value of the current flowing through the bit line depends on the resistance values of all the detection elements 15 connected to the same bit line. When detecting the presence or absence of skirmions of the corresponding magnetic element 10, the detected current value depends on the presence or absence of skirmions 40 below the detecting elements 15 of the non-applicable magnetic elements 10 connected to the same bit line. For this reason, it is necessary to newly provide a differentiating circuit. As a result, the added differentiating circuit deteriorates noise resistance.
  • the magnetic element 10 of the second embodiment is provided with Tr3
  • the steady current for detection flows only to the detection element 15 of the selected magnetic element 10, so that only the voltage corresponding to the resistance value of the selected detection element 15 is generated on the bit line. it can.
  • the amplification circuit C1 in the detection circuit 98 can set a large amplification factor, and the voltage comparison circuit C2 can output “0” or “1” with high accuracy. This means that the presence or absence of skyrmion 40 can be detected with high sensitivity to electrical signals such as noise.
  • the skyrmion memory 100 of this example includes the transistor Tr1, the transistor Tr2, and the transistor Tr3, thereby blocking a leak path through the magnetic element 10, preventing erroneous writing, and detecting the skyrmion 40 with high sensitivity. Circuit configuration.
  • a large-scale nonvolatile memory can be realized by arranging millions of magnetic elements 10 in a plane and storing information of several hundred M bits to several G bits. Since many magnetic elements 10 are used, it is the same as in the first embodiment that a circuit configuration capable of detecting leakage current, preventing erroneous writing, and detecting skyrmions with high sensitivity is necessary.
  • FIG. 12 is a schematic diagram showing a configuration example of the central arithmetic processing LSI_200 with skyrmion memory.
  • the skirmion memory-equipped central processing LSI_200 includes the skirmion memory 100 and a central processing circuit 210.
  • the central processing circuit 210 is, for example, a CMOS-LSI device.
  • the central processing circuit 210 has at least one function of writing data to the skyrmion memory 100 and reading data from the skyrmion memory 100.
  • the skyrmion memory 100 may be stacked above the field effect transistor included in the skyrmion memory mounted central processing LSI LSI_200.
  • the central processing circuit 210 is an example of a central information processing arithmetic logic circuit element.
  • FIG. 13 is a schematic diagram illustrating a configuration example of the data recording apparatus 300.
  • the data recording device 300 includes a skyrmion memory 100 and an input / output device 310.
  • the data recording device 300 is a memory device such as a hard disk or a USB memory, for example.
  • the input / output device 310 has at least one of a function of writing data to the skyrmion memory 100 from the outside and a function of reading data from the skyrmion memory 100 and outputting the data to the outside.
  • FIG. 14 is a schematic diagram illustrating a configuration example of the data processing device 400.
  • the data processing device 400 includes a skyrmion memory 100 and a processor 410.
  • the processor 410 includes a digital circuit that processes a digital signal, for example.
  • the processor 410 has at least one function of writing data to the skyrmion memory 100 and reading data from the skyrmion memory 100.
  • FIG. 15 is a schematic diagram illustrating a configuration example of the communication device 500.
  • the communication device 500 refers to all devices having a communication function with the outside, such as a mobile phone, a smartphone, and a tablet terminal. Communication device 500 may be portable or non-portable.
  • the communication device 500 includes a skyrmion memory 100 and a communication unit 510.
  • the communication unit 510 has a communication function with the outside of the communication device 500.
  • the communication unit 510 may have a wireless communication function, may have a wired communication function, and may have both wireless communication and wired communication functions.
  • the communication unit 510 operates based on a function of writing data received from the outside to the skillion memory 100, a function of transmitting data read from the skillion memory 100 to the outside, and control information stored in the skillion memory 100. Has at least one function.
  • a magnetic element capable of generating, erasing, and detecting skyrmion 40 at high speed and with low power consumption, skylmion memory 100 to which this magnetic element is applied, skirmion memory-equipped central processing LSI_200, and data recording apparatus 300
  • the data processing device 400 and the communication device 500 can be provided.
  • the skirmion memory 100 disclosed in the present specification can select an arbitrary magnetic element 10 from a plurality of magnetic elements 10 and can prevent a leakage current to a track included in another magnetic element 10 during transfer of the skillion 40. Further, the skillmion memory 100 of the present example can block the leak path even when the skillmion 40 is erased collectively. Therefore, the skyrmion memory 100 disclosed in this specification can reduce unnecessary power consumption. In the skyrmion memory 100 of this example, erroneous writing of bits to tracks of other magnetic elements 10 does not occur. Skyrmion memory 100 provides a circuit that can detect the presence or absence of skyrmion with high sensitivity. Furthermore, the skirmion memory 100 disclosed in the present specification improves the controllability by increasing the reading speed by devising the relative position of the writing portion and the sensor position.
  • Nonmagnetic insulator thin film 161 Nonmagnetic insulator thin film 181.
  • Apparatus 410 410 processor 500 communication apparatus 510 communication unit 600 skyrmion memory 698 detection circuit Tr1 transistor Rin input resistance Rf: feedback resistor, C1: amplifier circuit, C2: voltage comparison circuit, Vref: reference voltage

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  • Mram Or Spin Memory Techniques (AREA)

Abstract

L'invention concerne une mémoire flash à skyrmions non volatile, à vitesse élevée et à grande échelle ayant une faible consommation d'énergie, n'entraînant pas d'écriture erronée, et comprenant un circuit ayant une bonne sensibilité de détection de données mémorisées. En outre, un élément magnétique est pourvu : d'un film mince magnétique en forme de trajet fermé conçu sous forme de film mince dans lequel peuvent être présents des skyrmions, ayant une largeur W et une longueur L sur le plan de film mince et une forme de trajet fermé unique dans laquelle sont connectées les deux extrémités dans la direction L de longueur et dans laquelle des skyrmions sont transférés de manière circulaire, et dans laquelle une pluralité de skyrmions est générée, transférée et collectivement effacée ; et d'un premier transistor servant à sélectionner une électrode circonférentielle externe ou une électrode circonférentielle interne disposées sur le film mince magnétique en forme de trajet fermé et/ou d'un deuxième transistor servant à sélectionner une unité de génération de skyrmions et/ou d'un troisième transistor servant à sélectionner un élément de détection de skyrmions.
PCT/JP2017/039834 2016-11-18 2017-11-02 Élément magnétique, mémoire à skyrmions, unité centrale de traitement lsi équipée d'une mémoire à skyrmions, dispositif d'enregistrement de données, dispositif de traitement de données et dispositif de communication de données WO2018092611A1 (fr)

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JP2016-225237 2016-11-18
JP2016225237A JP2018082122A (ja) 2016-11-18 2016-11-18 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載中央演算処理ｌｓｉ、データ記録装置、データ処理装置およびデータ通信装置

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2022243458A1 (fr) 2021-05-19 2022-11-24 Norwegian University Of Science And Technology (Ntnu) Dispositif de stockage de texture de spin

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021033579A (ja) * 2019-08-22 2021-03-01 国立大学法人大阪大学 演算装置

Citations (4)

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Publication number Priority date Publication date Assignee Title
WO2016002806A1 (fr) * 2014-07-04 2016-01-07 国立研究開発法人理化学研究所 Mémoire à éléments magnétiques skyrmions, dispositif électronique à semi-conducteurs, dispositif d'enregistrement de données, processeur de données et dispositif de communication
WO2016021349A1 (fr) * 2014-08-07 2016-02-11 国立研究開発法人理化学研究所 Support de stockage magnétique et dispositif d'enregistrement de données
WO2016035579A1 (fr) * 2014-09-02 2016-03-10 国立研究開発法人理化学研究所 Élément magnétique, mémoire à skyrmion, dispositif de mémoire à skyrmion, dispositif électronique à semi-conducteur, dispositif d'enregistrement de données, dispositif de traitement de données, et dispositif de communication de données
WO2016067744A1 (fr) * 2014-10-28 2016-05-06 国立研究開発法人理化学研究所 Élément magnétique, mémoire à skyrmions, dispositif de mémoire à skyrmions, dispositif électronique à semi-conducteur équipé d'une mémoire à skyrmions, dispositif d'enregistrement de données, dispositif de traitement de données, et dispositif de communication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016002806A1 (fr) * 2014-07-04 2016-01-07 国立研究開発法人理化学研究所 Mémoire à éléments magnétiques skyrmions, dispositif électronique à semi-conducteurs, dispositif d'enregistrement de données, processeur de données et dispositif de communication
WO2016021349A1 (fr) * 2014-08-07 2016-02-11 国立研究開発法人理化学研究所 Support de stockage magnétique et dispositif d'enregistrement de données
WO2016035579A1 (fr) * 2014-09-02 2016-03-10 国立研究開発法人理化学研究所 Élément magnétique, mémoire à skyrmion, dispositif de mémoire à skyrmion, dispositif électronique à semi-conducteur, dispositif d'enregistrement de données, dispositif de traitement de données, et dispositif de communication de données
WO2016067744A1 (fr) * 2014-10-28 2016-05-06 国立研究開発法人理化学研究所 Élément magnétique, mémoire à skyrmions, dispositif de mémoire à skyrmions, dispositif électronique à semi-conducteur équipé d'une mémoire à skyrmions, dispositif d'enregistrement de données, dispositif de traitement de données, et dispositif de communication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022243458A1 (fr) 2021-05-19 2022-11-24 Norwegian University Of Science And Technology (Ntnu) Dispositif de stockage de texture de spin

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