WO2018070127A1 - Système de traitement de substrat - Google Patents

Système de traitement de substrat Download PDF

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Publication number
WO2018070127A1
WO2018070127A1 PCT/JP2017/031025 JP2017031025W WO2018070127A1 WO 2018070127 A1 WO2018070127 A1 WO 2018070127A1 JP 2017031025 W JP2017031025 W JP 2017031025W WO 2018070127 A1 WO2018070127 A1 WO 2018070127A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
plating
module
heat treatment
chamber
Prior art date
Application number
PCT/JP2017/031025
Other languages
English (en)
Japanese (ja)
Inventor
岩下　光秋
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2018070127A1 publication Critical patent/WO2018070127A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/07—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers Not used, see H01L21/677
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

Le problème décrit par la présente invention est de réaliser un traitement de placage immédiatement sur un substrat sur lequel un traitement sous vide de plasma a été effectué. La Solution selon l'invention porte sur un système de traitement de substrat 1 comprenant une chambre 1A, un module de traitement sous vide de plasma 4 disposé à l'intérieur de la chambre 1A, un module de traitement de placage 5 et un module de traitement thermique 6. Un substrat W est transporté entre le module de traitement sous vide de plasma 4, le module de traitement de placage 5, et le module de traitement thermique 6 au moyen d'un mécanisme de transport commun 222.
PCT/JP2017/031025 2016-10-11 2017-08-29 Système de traitement de substrat WO2018070127A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-200308 2016-10-11
JP2016200308 2016-10-11

Publications (1)

Publication Number Publication Date
WO2018070127A1 true WO2018070127A1 (fr) 2018-04-19

Family

ID=61906286

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/031025 WO2018070127A1 (fr) 2016-10-11 2017-08-29 Système de traitement de substrat

Country Status (1)

Country Link
WO (1) WO2018070127A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142549A (ja) * 1993-11-22 1995-06-02 Hitachi Ltd 半導体製造装置
JP2007109858A (ja) * 2005-10-13 2007-04-26 Hitachi Cable Ltd 配線基板及びその作製方法
JP2009249679A (ja) * 2008-04-04 2009-10-29 Tokyo Electron Ltd 半導体製造装置、半導体製造方法
JP2015035583A (ja) * 2013-07-11 2015-02-19 東京エレクトロン株式会社 熱処理装置及び成膜システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142549A (ja) * 1993-11-22 1995-06-02 Hitachi Ltd 半導体製造装置
JP2007109858A (ja) * 2005-10-13 2007-04-26 Hitachi Cable Ltd 配線基板及びその作製方法
JP2009249679A (ja) * 2008-04-04 2009-10-29 Tokyo Electron Ltd 半導体製造装置、半導体製造方法
JP2015035583A (ja) * 2013-07-11 2015-02-19 東京エレクトロン株式会社 熱処理装置及び成膜システム

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