WO2018058898A1 - 一种去气方法、去气腔室和半导体处理设备 - Google Patents

一种去气方法、去气腔室和半导体处理设备 Download PDF

Info

Publication number
WO2018058898A1
WO2018058898A1 PCT/CN2017/075973 CN2017075973W WO2018058898A1 WO 2018058898 A1 WO2018058898 A1 WO 2018058898A1 CN 2017075973 W CN2017075973 W CN 2017075973W WO 2018058898 A1 WO2018058898 A1 WO 2018058898A1
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
degassing chamber
cavity
substrate
degassing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/075973
Other languages
English (en)
French (fr)
Inventor
叶华
贾强
徐悦
蒋秉轩
侯珏
石璞
郑金果
宗令蓓
赵梦欣
丁培军
王厚工
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to JP2019516393A priority Critical patent/JP7012708B2/ja
Priority to KR1020197005638A priority patent/KR102247259B1/ko
Publication of WO2018058898A1 publication Critical patent/WO2018058898A1/zh
Priority to US16/366,392 priority patent/US20190218660A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00—Drying solid materials or objects by processes involving the application of heat
    • F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
    • F26B3/30—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/04—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
    • F26B5/042—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum for drying articles or discrete batches of material in a continuous or semi-continuous operation, e.g. with locks or other air tight arrangements for charging/discharging
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of semiconductor device fabrication technology, and in particular, to a degassing method, a degassing chamber, and a semiconductor processing device.
  • PVD Physical Vapor Deposition
  • a Degas process step is usually required to remove impurities such as water vapor adsorbed by the substrate in the atmosphere, to clean the surface of the substrate, and to provide a substrate as clean as possible for subsequent processes.
  • the degassing process step is included in the copper interconnect PVD process flow shown in FIG.
  • the degassing chamber is divided into a single-piece degassing chamber and a plurality of degassing chambers. Among them, a plurality of degassing chambers are more and more capable due to their ability to simultaneously heat a plurality of substrates. Adopted. For a plurality of degassing chambers, before proceeding with the process, the cassettes in the chamber are first lowered to a designated loading and unloading position, and the substrates are transferred to the cassettes one by one by a vacuum robot until the cassettes are filled with the bases. The piece is then raised to the designated heating position. Begin the process and use the bulb to rapidly heat the substrate in the cassette for a certain period of time until the substrate reaches the temperature required for the process. After the process is finished, the vacuum manipulator then transfers the substrate out of the chamber piece by piece, and then repeats the above heating process by placing the next batch of substrates to be heated.
  • the above degassing chamber has the following problems in practical applications:
  • the initial temperature of the degassing process is higher than the initial temperature of the previous degassing process, that is, the initial temperature of the degassing chamber gradually increases as the number of processes increases, which makes When different batches of substrates enter the same degassing chamber successively, the initial temperatures of the chambers are different, resulting in different heating temperatures, and different batches of substrates eventually reach different temperatures. This in turn results in inconsistent quality of the different batches of substrates.
  • the substrate temperature in the central region of the chamber tends to be higher than the substrate temperature in the edge region of the chamber when the substrate is heated by the bulb, that is, the temperature uniformity of the same batch of substrates is poor, thereby causing the same The quality of the batch of substrates is inconsistent.
  • the present invention is directed to the above technical problems existing in the prior art, and provides a degassing method, a degassing chamber, and a semiconductor processing apparatus, which can not only improve the temperature uniformity of the same batch of substrates and different batches of substrates, but also It is possible to realize the on-and-going of the substrate to be degassed, thereby increasing the productivity of the device.
  • the invention provides a degassing method, comprising:
  • Step S1 heating the degassing chamber so that the internal temperature reaches a preset temperature and remains at the preset temperature;
  • Step S2 introducing the gas to be degassed substrate into the degassing chamber and taking it out after heating for a set period of time.
  • the step S1 further includes:
  • the present invention also provides a degassing chamber, comprising:
  • a temperature control unit for heating the interior of the degassing chamber such that the internal temperature of the degassing chamber reaches a preset temperature and remains at the preset temperature
  • control unit configured to control the robot to introduce the gas-removed substrate into the degassing chamber, and take out after heating for a set period of time.
  • the temperature control unit comprises:
  • a heating element for heating the degassing chamber to bring the internal temperature to a preset temperature
  • a temperature measuring element for detecting an internal temperature of the degassing chamber in real time
  • control element configured to compare the internal temperature with the preset temperature, and then control the heating element according to the comparison result, so that the internal temperature of the degassing chamber is maintained at the preset temperature .
  • the degassing chamber further includes a cavity and a film cassette for carrying the substrate to be degassed; a film opening is formed on a sidewall of the cavity, and the film opening serves as the base a passage into or out of the cavity; the cassette is movable in a vertical direction within the cavity;
  • the heating element includes a first light source member and a second light source member, the cavity being divided into a first cavity and a second cavity by the film opening; the first light source member is located in the first cavity In the body, the second light source member is located in the second cavity; the first light source member and the second light source member are configured to heat the liquid to be degassed substrate in the film cassette.
  • the temperature measuring element obtains an internal temperature of the degassing chamber by detecting a temperature of the cassette; or
  • a detecting substrate is disposed on the cassette, and the temperature measuring element is configured to obtain an internal temperature of the degassing chamber by measuring a temperature of the detecting substrate.
  • the heating element further includes a first reflecting tube and a second reflecting tube, wherein the first reflecting tube is located between the first cavity and the first light source; the second reflecting tube Located between the second cavity and the second light source member;
  • the first reflector and the second reflector are used to direct light impinging thereon to the sheet
  • the gas to be degassed substrate in the cartridge is reflected.
  • the first reflective tube comprises a top plate
  • the second reflective tube comprises a bottom plate
  • the top plate is covered at an end of the first reflective tube away from the film opening
  • the bottom plate is covered in the An end of the second reflector that is away from the film opening
  • the top plate and the bottom plate are for reflecting light impinging thereon toward the gas to be degassed substrate in the cavity.
  • the temperature measuring component comprises a first temperature measuring component and a second temperature measuring component, wherein the first temperature measuring component is configured to obtain the first cavity by detecting a temperature of the first reflective cylinder
  • the second temperature measuring member is configured to obtain an internal temperature of the second cavity by detecting a temperature of the second reflecting cylinder;
  • the control element includes a first temperature control member and a second temperature control member, wherein the first temperature control member is configured to receive an internal temperature of the first cavity sent by the first temperature measuring member And comparing the internal temperature with the preset temperature, and then controlling the first light source according to the comparison result, so that the internal temperature of the first cavity is kept at the preset temperature;
  • the second temperature control member is configured to receive an internal temperature of the second cavity sent by the second temperature measuring component, compare the internal temperature with the preset temperature, and then compare the As a result, the second light source member is controlled such that the internal temperature of the second cavity remains at the preset temperature.
  • the temperature measuring component further includes a first spare part and a second spare part, wherein the first spare part is used for detecting a temperature of the first reflective tube; and the second spare part is used for detecting a Describe the temperature of the second reflector;
  • the first temperature control member is further configured to determine whether a difference between temperatures of the first reflectors respectively sent by the first temperature measuring component and the first spare component is within a preset range;
  • the second temperature control member is further configured to determine whether a difference in temperature of the second light reflecting tube respectively sent by the second temperature measuring member and the second standby member is within a preset range.
  • the degassing chamber further includes a first alarm element and a second alarm element, wherein
  • the first temperature control member controls the first alarm component to perform an alarm when determining that a difference in temperature of the first reflector is not within a preset range
  • the second temperature control unit controls the second alarm element to perform an alarm when it is determined that the difference of the temperature of the second reflector is not within a preset range.
  • the temperature measuring element uses a thermocouple or an infrared sensor.
  • the present invention also provides a semiconductor processing apparatus including the above-described degassing chamber provided by the present invention.
  • the degassing chamber is first heated to bring the internal temperature to a preset temperature and maintained at the preset The temperature is unchanged, and then the gas substrate to be removed is introduced into the degassing chamber for constant temperature heating, and taken out after the heating set period.
  • the temperature in the degassing chamber always at the preset temperature, it is possible to avoid the problem that the temperature of the different batches of the substrate finally reaches different temperatures due to the difference in the initial temperature of the chamber, thereby improving the substrate of different batches. Quality consistency.
  • any number of gas to be degassed substrates can be introduced into the degassing chamber at any time. And can be taken out after the heating set time period, without waiting for the previous batch of substrates to be heated and passed out of the chamber before the next batch of substrates can be processed, thereby increasing the equipment productivity.
  • the gas to be degassed and heating it for a set period of time it can also ensure that the substrate entering the chamber at any time can reach the preset target temperature, thereby realizing accurate control of the substrate temperature.
  • FIG. 1 is a schematic diagram of a process flow of a copper interconnect PVD in the prior art
  • Embodiment 2 is a flow chart of a degassing method in Embodiment 1 of the present invention.
  • Embodiment 3 is a schematic structural view of a degassing chamber in Embodiment 2 of the present invention.
  • Figure 4 is a plan view showing the structure of the degassing chamber of Figure 3.
  • This embodiment provides a degassing method, as shown in FIG. 2, including:
  • Step S1 heating the degassing chamber so that its internal temperature reaches a preset temperature and remains at the preset temperature.
  • Step S2 The substrate to be degassed is introduced into the degassing chamber and taken out after the heating set period of time.
  • Step S1 allows the degassing chamber to be kept at a constant temperature so that the substrate entering the degassing chamber can be heated at a constant temperature. This avoids the problem that different batches of substrates eventually reach different temperatures due to the difference in initial chamber temperatures, thereby improving the quality uniformity of different batches of substrates.
  • Step S2 can realize the follow-up of the substrate to be degassed, that is, any number of substrates to be degassed can be introduced into the degassing chamber at any time, and can be taken out after the heating set time period, and The process of the next batch of substrates can be carried out without waiting for all the substrates in the chamber to be heated and passed out of the chamber, thereby increasing the productivity of the equipment.
  • the gas to be degassed and heating it for a set period of time it is also ensured that the substrate entering the chamber at any time can reach the preset target temperature, thereby Accurate control of substrate temperature is now available.
  • the heating time of the substrate in step S2 may be determined according to a specific case as long as the substrate can finally reach the target temperature.
  • the transfer of the robot can be controlled by a program to realize that the substrate can be taken out after heating for a specified time.
  • step S1 further comprises:
  • Step S11 heating the degassing chamber to bring the internal temperature to a preset temperature
  • step S12 the internal temperature of the degassing chamber is detected in real time, and the difference between the internal temperature and the preset temperature is compared, and then the internal temperature of the degassing chamber is controlled according to the comparison result so as to be kept at the preset temperature.
  • step S12 if the difference between the internal temperature and the preset temperature is outside the allowable temperature range, the internal temperature of the degassing chamber is increased or decreased until the internal temperature tends to coincide with the preset temperature, thereby The internal temperature of the degassing chamber is maintained at a preset temperature.
  • the closed loop control of the temperature adjustment can be realized, thereby realizing the accurate internal temperature of the degassing chamber. control.
  • the degassing chamber is heated at a constant temperature to the degassing substrate, the difference between the target temperature of the degassing substrate and the preset temperature is a fixed value, and therefore, if the target temperature of the substrate to be degassed is known, , the above preset temperature can be determined. For example, when the preset temperature is 130 ° C, the substrate to be degassed reaches a target temperature of 160 ° C after being heated for a certain period of time. In this case, when it is necessary to heat the substrate to be degassed to 160 ° C, it is necessary to set the preset temperature to 130 ° C.
  • an embodiment of the present invention further provides a degassing chamber, which includes a temperature control unit and a control unit, wherein the temperature control unit is configured to heat the interior of the degassing chamber to make the degassing chamber The internal temperature reaches the preset temperature and remains at the preset temperature.
  • Control unit for control The robot introduces the gas-removed substrate into the degassing chamber and takes it out after the heating set period.
  • the control unit can be a host computer or the like.
  • the control unit controls the robot to introduce the gas to be degassed substrate into the degassing chamber, and after being taken out after the heating set period of time, the accompanying and outgoing of the gas to be degassed substrate can be realized, that is, the gas can be degassed at any time.
  • any number of substrates to be degassed are introduced into the chamber and can be taken out after heating for a set period of time without waiting for the previous batch of substrates to be heated and passed out of the chamber before the next batch of substrates can be processed. , thereby increasing equipment capacity.
  • by taking the gas to be degassed and heating it for a set period of time it can also ensure that the substrate entering the chamber at any time can reach the preset target temperature, thereby realizing accurate control of the substrate temperature.
  • the temperature control unit comprises a heating element, a temperature measuring element and a control element, wherein the heating element is used for heating the degassing chamber to bring the internal temperature to a preset temperature; and the temperature measuring element is used for detecting degassing in real time.
  • the internal temperature of the chamber which uses a thermocouple or an infrared sensor or the like.
  • the control element is configured to compare the internal temperature with the preset temperature, and then control the heating element according to the comparison result so that the internal temperature of the degassing chamber is maintained at the preset temperature.
  • control unit determines whether the difference between the internal temperature and the preset temperature exceeds the allowable temperature range, and if so, increases or decreases the internal temperature of the degassing chamber until the internal temperature and the preset temperature tend to Consistently, the internal temperature of the degassing chamber is maintained at a preset temperature.
  • the degassing chamber further includes a cavity 1 and a substrate for carrying the gas to be degassed.
  • the cassette 2 wherein the chamber 1 defines a heating space for the degassing chamber.
  • a film opening 13 is formed in the side wall of the cavity 1, and the film opening 13 serves as a passage for the substrate to pass into or out of the cavity 1.
  • the film cassette 2 includes a base body 23, a top cover 21 and a bottom cover 22, wherein the base body 23 is provided with a plurality of slots for placing a plurality of substrates, and the arrangement of the substrates 23 must take into consideration the transferability of the substrate to prevent the substrate from colliding with the substrate 23 when transported by a robot.
  • the top cover 21 and the bottom cover 22 are respectively disposed at opposite ends of the base body 23, and the top cover 21 is opposed to the top of the cavity 1, and the bottom cover 22 is opposed to the bottom of the cavity 1.
  • the base 23 is for supporting the top cover 21, the bottom cover 22, and the substrate located thereon.
  • the cassette 2 is made of aluminum material, and the top cover 21 and the bottom cover 22 are present so that the substrates located at the upper and lower ends of the cassette 2 can be heated by the bulb and are preferably heated, reducing the base of the middle portion of the cassette 2. The temperature difference between the sheet and the substrate at the upper and lower ends.
  • the heating element 3 includes a first light source member 31 and a second light source member 32.
  • the cavity 1 is divided into a first cavity 11 and a second cavity 12 by a film opening 11; the first light source member 31 is located in the first cavity 11
  • the second light source member 32 is located inside the second cavity 12.
  • the first light source member 31 and the second light source member 32 are for heating the substrate in the cassette 2.
  • the substrate in the film cassette 2 can be heated by the light source whether in the upper region of the film opening 11 or in the lower region of the film opening 11, thereby ensuring the substrate in the degassing process and the picking and placing process.
  • the process temperature is balanced, which in turn not only improves the degassing process quality of the substrate, but also provides a cleaner substrate for subsequent processes.
  • the first light source member 31 is disposed around the first cavity 11 in the circumferential direction of the first cavity 11 on the inner side of the sidewall of the first cavity 11; the second light source member 32 is along the second cavity.
  • the circumferential direction of 12 is disposed around the second cavity 12 on the inner side of the side wall of the second cavity 12; specifically, the first light source member 31 and the second light source member 32 are disposed in the vertical direction in the cavity 1, and Symmetrically with respect to the film opening 11, the film cassette 2 can be vertically moved in a space surrounded by the first light source member 31 and the second light source member 32, which enables the cassette 2 to move to a position within the cavity 1,
  • the substrate in the cassette 2 can be heated by the equalization of the first light source member 31 or the second light source member 32, so that when the substrate needs to be introduced into or out of the cavity 1, even if the cassette 2 is in the first chamber
  • the position within the body 11 and the second cavity 12 is varied, and the substrate therein can also be heated by the first light source member
  • the first light source member 31 or the second light source member 32 surrounds the heating space, each of which can uniformly heat the substrate therein around the cassette 2, the temperature uniformity of the substrate in the cassette 2 can be improved.
  • the first light source member or the second light source member may adopt any other structure as long as it can heat the substrate in the cassette.
  • the temperature measuring element 5 can obtain the internal temperature of the degassing chamber by detecting the temperature of the cassette 2, that is, the temperature of the cassette 2 is regarded as the internal temperature of the degassing chamber, because the cassette 2 is The temperature can more accurately reflect the internal temperature of the degassing chamber, thereby improving the accuracy of the detection.
  • a detecting substrate false substrate
  • the temperature measuring element 5 obtains the internal temperature of the degassing chamber by measuring the temperature of the detecting substrate, that is, the temperature of the detecting substrate is regarded as
  • the temperature of the detecting substrate can also accurately reflect the internal temperature of the degassing chamber, thereby improving the accuracy of the detection.
  • the heating element 3 further includes a first reflecting cylinder 41 and a second reflecting cylinder 42, wherein the first reflecting cylinder 41 is located between the first cavity 11 and the first light source member 31; the second reflecting cylinder 42 Located between the second cavity 12 and the second light source member 32; the first light reflecting cylinder 41 and the second light reflecting cylinder 42 are configured to reflect the light irradiated thereon toward the film cassette 2 and the substrate therein, that is, the first A light reflecting cylinder 41 and a second reflecting cylinder 42 are used to reflect heat transferred thereto to the film cartridge 2 and the substrate therein.
  • the first reflecting cylinder 41 is a cylindrical structure that is closed in the circumferential direction, and is disposed between the first light source member 31 and the first cavity 11 around the first light source member 31 along the circumferential direction of the first light source member 31.
  • the second reflecting cylinder 42 is a circumferentially closed cylindrical structure which is disposed between the second light source member 32 and the second cavity 12 in the circumferential direction of the second light source member 32 around the second light source member 32; It is provided that the heat generated by the first light source member 31 and the second light source member 32 can be well held in the cylinder, thereby improving the heat utilization rate of the first light source member 31 and the second light source member 32, improving the heating efficiency while ensuring The heating temperatures in the first reflecting cylinder 41 and the second reflecting cylinder 42 are equalized, so that the substrate in the cassette 2 can be uniformly heated.
  • the first reflector 4 includes a top plate 411, and the second reflector 42 includes a bottom plate 421.
  • the top plate 411 covers one end of the first reflector tube 41 away from the film opening port 13, and the bottom plate 421 covers the second portion.
  • the end of the reflecting cylinder 42 away from the film opening 13; the top plate 411 and the bottom plate 421 are for reflecting the light irradiated thereon to the substrate to be degassed in the cavity 1.
  • the arrangement of the top plate 411 and the bottom plate 421 enables the reflecting cylinder 4 disposed in the cavity 1 to form a closed heating space, thereby ensuring a good effect of maintaining a preset temperature in the cavity 1.
  • the light irradiated thereon can be diffusely reflected and/or specularly reflected.
  • the diffuse reflection can make the light emitted by the first light source member 31 and the second light source member 32 in the cylinder uniform and uniform in reflection, thereby making the heating energy in the cylinder more uniform.
  • the specular reflection can cause most of the light emitted by the first light source member 31 and the second light source member 32 to be reflected back into the cylinder, thereby reducing the loss of heating energy and ensuring the heat balance in the cylinder.
  • the first reflecting tube 41 is located between the first cavity 11 and the first light source member 31; the second reflecting tube 42 is located between the second cavity 12 and the second light source member 32, which can be realized.
  • the first light source member 31 and the second light source member 32 are respectively separated from the sidewall of the first cavity 11 and the sidewall of the second cavity 12, and the above structures of the first reflector 4 and the second reflector 42 are
  • the material can form a relatively closed and constant high temperature environment in the first cavity 11 and the second cavity 12, respectively. In a constant high temperature environment, the heat absorption and heat dissipation of the components in the first cavity 11 and the second cavity 12 are balanced.
  • the heat capacity of the single substrate is relatively small relative to the heat capacity in the entire cavity 1, so that the components in the cavity 1 are a heat source for the substrate itself, so the substrate will The heat balance is quickly reached by the heat radiation of the first and second reflecting tubes 41 and 42 and the first and second light source units 31 and 32.
  • the temperature measuring element 5 includes a first temperature measuring member 51 and a second temperature measuring member 52, wherein the first temperature measuring member 51 is configured to obtain the internal temperature of the first cavity 11 by detecting the temperature of the first reflecting cylinder 41;
  • the second temperature measuring member 52 is for obtaining the internal temperature of the second cavity 12 by detecting the temperature of the second reflecting cylinder 42.
  • the control element 6 comprises a first temperature control member 61 and a second temperature control member 62, wherein the first temperature control member 61 is configured to receive the interior of the first cavity 11 sent by the first temperature measuring member 51. Temperature and will The internal temperature is compared with the preset temperature, and then the first light source member 31 is controlled according to the comparison result so that the internal temperature of the first cavity 11 is maintained at the preset temperature.
  • the second temperature control member 62 is configured to receive the internal temperature of the second cavity 12 sent by the second temperature measuring member 52, compare the internal temperature with a preset temperature, and then control the second light source according to the comparison result.
  • the member 32 is such that the internal temperature of the second chamber 12 is maintained at a preset temperature. In this way, closed-loop control of the temperature adjustment of the first cavity 11 and the second cavity 12 can be respectively performed, so that precise control of the internal temperatures of the first cavity 11 and the second cavity 12 can be achieved, respectively.
  • the temperature measuring element 5 further includes a first spare part 53 and a second spare part 54, wherein the first spare part 53 is for detecting the temperature of the first reflecting tube 41 and feeding the temperature back to the first temperature controlling part
  • the second spare member 54 is configured to detect the temperature of the second reflector 42 and feed the temperature back to the second temperature control member 62.
  • the first temperature control member 61 is further configured to determine whether the difference between the temperatures of the first reflectors 41 sent by the first temperature measuring member 51 and the first backup member 53 is within a preset range; the second temperature control member The 62 is also used to determine whether the difference in temperature of the second reflector 42 transmitted from the second temperature measuring member 52 and the second spare member 54 is within a preset range.
  • the working conditions of the first temperature measuring member 51 and the second temperature measuring member 52 can be monitored normally, thereby preventing the first temperature measuring member 51 and the second temperature measuring unit.
  • the feedback temperature obtained by the first temperature control member 61 and the second temperature control member 62 is incorrect due to accidental damage, and the temperature control caused by the abnormality is prevented from being abnormal.
  • the degassing chamber further includes a first alarm element 9 and a second alarm element 10, wherein the first temperature control member 61 controls when the difference of the temperature of the first reflector 41 is not within the preset range.
  • the first alarm element 9 performs an alarm;
  • the second temperature control unit 62 controls the second alarm element 10 to perform an alarm when it is determined that the difference of the temperature of the second reflector 42 is not within the preset range.
  • the first temperature measuring member 51 and the second temperature measuring member 52 are thermocouples, and the two are respectively mounted on the first reflecting tube 41 and the second reflecting tube 42 in a contact manner. Make measurements.
  • the present invention is not limited thereto, and in practical applications, the first temperature measuring member 51 and the first The second temperature measuring member 52 can also be measured in a non-contact manner such as an infrared sensor. When measuring, just align the measuring surface of the infrared sensor with the reflector, and adjust the distance between the measuring surface of the infrared sensor and the reflector to the measuring range of the infrared sensor.
  • the degassing chamber further includes a lifting mechanism 7 which penetrates the bottom of the cavity 1 and is connected to the bottom cover 22 of the cassette 2 for driving the cassette 2 to be lifted and lowered to place the cassette 2 in a different position.
  • the substrate in the height position is transferred to the height position corresponding to the film opening 13 for picking up and dropping the sheet.
  • a heat insulating member 8 is provided at the junction of the elevating mechanism 7 and the bottom cover 22 for isolating heat conduction between the cassette 2 and the elevating mechanism 7.
  • the specific degassing process of the above degassing chamber is: before the heating of the substrate to be degassed is started, the heating element 3 outputs a large power to quickly heat the cavity 1 to a preset temperature under the control of the control element 6.
  • the heating element 3, under the control of the control element 6, outputs a lower power to maintain the temperature in the cavity 1 at a constant preset temperature.
  • the autoreceive film opening 13 receives one or more substrates, and the substrate is placed at different height positions in the film cassette 2 by lifting of the lifting mechanism 7; the film cassette 2 is moved by the lifting mechanism 7 to be adjacent to the heating element.
  • the lifting mechanism 7 drives the cassette 2 to move to the height position corresponding to the film opening 13, and the substrate is taken away by the robot; The substrate is replenished; the above process of loading and unloading the substrate is repeated until the substrate to be degassed completes the degassing process.
  • the embodiment provides a semiconductor processing apparatus including the degassing chamber provided by the above embodiment of the present invention.
  • the semiconductor processing apparatus provided by the embodiment of the invention can improve the temperature uniformity of the same batch of substrates and different batches of substrates by using the above-mentioned degassing chamber provided by the embodiments of the present invention, and can realize the gas to be degassed.
  • the substrate can be used to increase the capacity of the device.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Combustion & Propulsion (AREA)
  • Microbiology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)

Abstract

本发明提供一种去气方法、去气腔室和半导体处理设备。该去气方法包括：步骤S1：加热去气腔室，以使其内部温度达到预设温度，并保持在该预设温度不变；步骤S2：将待去气基片传入去气腔室内，并在加热设定时间段之后取出。本发明提供的去气方法，其不仅可以提高同一批次基片和不同批次基片的温度均匀性，而且可以实现待去气基片的随入随出，从而可以提高设备产能。

Description

一种去气方法、去气腔室和半导体处理设备 技术领域
本发明涉及半导体器件制备技术领域，具体地，涉及一种去气方法、去气腔室和半导体处理设备。
背景技术
物理气相沉积(Physical Vapor Deposition，PVD)技术广泛地应用在半导体制造技术领域中。在PVD工艺中，通常需要Degas(去气)工艺步骤，用以去除掉基片在大气中吸附的水蒸气等杂质，清洁基片的表面，为后续工序提供尽可能干净的基片。例如图1所示的铜互连PVD工艺流程中即包含该去气工艺步骤。
去气腔室分为单片去气腔室和多片去气腔室两种，其中多片去气腔室因其能够同时加热多片基片，具有产能较高的特点而越来越多的被采用。对于多片去气腔室，在进行工艺前，首先将腔室中的片盒下降至指定的装卸位置，并通过真空机械手将基片逐片传输到片盒内，直至片盒上放满基片，然后，将片盒上升至指定的加热位置。开始工艺，使用灯泡对片盒内的基片进行快速加热一定的时间，直至基片达到工艺所需的温度。工艺结束后，真空机械手再将基片逐片传出腔室，然后再放入下一批待加热的基片重复上述加热过程。
上述去气腔室在实际应用中存在以下问题：
其一，由于去气腔室进行本次去气工艺的初始温度势必高于前一次去气工艺的初始温度，即，去气腔室的初始温度随工艺次数的增加而逐渐升高，这使得不同批次的基片在先后进入同一去气腔室时，腔室的初始温度存在差异，从而导致加热时间相同的条件下，不同批次的基片最终达到的温度不同， 进而造成不同批次的基片的品质不一致。
其二，由于在使用灯泡加热基片时，位于腔室中心区域的基片温度往往高于位于腔室边缘区域的基片温度，即，同一批基片的温度均匀性较差，从而造成同一批次的基片的品质不一致。
其三，虽然多片去气腔室可以一次加热多个基片，但是由于后一批基片只能等到腔室内的前一批基片均加热完毕，并传出腔室之后才能进入腔室，因此，单凭增加同一批基片的数量来提升设备产能的效果并不明显，虽然可以通过配置2个或以上的多片去气腔室来提升产能，但是这又会导致设备的复杂度和成本增加。
发明内容
本发明针对现有技术中存在的上述技术问题，提供一种去气方法、去气腔室和半导体处理设备，其不仅可以提高同一批次基片和不同批次基片的温度均匀性，而且可以实现待去气基片的随入随出，从而可以提高设备产能。
本发明提供一种去气方法，包括：
步骤S1：加热去气腔室，以使其内部温度达到预设温度，并保持在该预设温度不变；
步骤S2：将待去气基片传入所述去气腔室内，并在加热设定时间段之后取出。
优选的，所述步骤S1进一步包括：
加热去气腔室，以使其内部温度达到预设温度；
实时检测所述去气腔室的内部温度，并将该内部温度与所述预设温度进行差比较，然后根据比较结果控制所述去气腔室的内部温度，以使其保持在所述预设温度不变。
作为另一个技术方案，本发明还提供一种去气腔室，包括：
控温单元，用于加热所述去气腔室的内部，以使所述去气腔室的内部温度达到预设温度，并保持在该预设温度不变；
控制单元，用于控制机械手将待去气基片传入所述去气腔室内，并在加热设定时间段之后取出。
优选的，所述温控单元包括：
加热元件，用于加热所述去气腔室，以使其内部温度达到预设温度；
测温元件，用于实时检测所述去气腔室的内部温度；
控制元件，用于将该内部温度与所述预设温度进行差比较，然后根据比较结果控制所述加热元件，以使所述去气腔室的内部温度，保持在所述预设温度不变。
优选的，所述去气腔室还包括腔体和用于承载所述待去气基片的片盒；所述腔体的侧壁上开设有传片口，所述传片口用作所述基片传入或传出所述腔体的通道；所述片盒在所述腔体内可沿竖直方向移动；
所述加热元件包括第一光源件和第二光源件，所述腔体以所述传片口为界分为第一腔体和第二腔体；所述第一光源件位于所述第一腔体内，所述第二光源件位于所述第二腔体内；所述第一光源件和所述第二光源件用于对所述片盒内的所述待去气基片进行加热。
优选的，所述测温元件通过检测所述片盒的温度来获得所述去气腔室的内部温度；或者，
在所述片盒上设置有检测基片，所述测温元件用于通过测量所述检测基片的温度来获得所述去气腔室的内部温度。
优选的，所述加热元件还包括第一反光筒和第二反光筒，其中，所述第一反光筒位于所述第一腔体和所述第一光源件之间；所述第二反光筒位于所述第二腔体和所述第二光源件之间；
所述第一反光筒和所述第二反光筒用于将照射到其上的光线向所述片 盒内的所述待去气基片反射。
优选的，所述第一反光筒包括顶板，所述第二反光筒包括底板；所述顶板盖合在所述第一反光筒的远离所述传片口的一端，所述底板盖合在所述第二反光筒的远离所述传片口的一端；
所述顶板和所述底板用于将照射到其上的光线向所述腔体内的所述待去气基片反射。
优选的，所述测温元件包括第一测温件和第二测温件，其中，所述第一测温件用于通过检测所述第一反光筒的温度来获得所述第一腔体的内部温度；所述第二测温件用于通过检测所述第二反光筒的温度来获得所述第二腔体的内部温度；
所述控制元件包括第一控温件和第二控温件，其中，所述第一控温件用于接收由所述第一测温件发送而来的所述第一腔体的内部温度，并将该内部温度与所述预设温度进行差比较，然后根据比较结果控制所述第一光源件，以使所述第一腔体的内部温度，保持在所述预设温度不变；所述第二控温件用于接收由所述第二测温件发送而来的所述第二腔体的内部温度，并将该内部温度与所述预设温度进行差比较，然后根据比较结果控制所述第二光源件，以使所述第二腔体的内部温度，保持在所述预设温度不变。
优选的，所述测温元件还包括第一备用件和第二备用件，其中，所述第一备用件用于检测所述第一反光筒的温度；所述第二备用件用于检测所述第二反光筒的温度；
所述第一控温件还用于判断分别由所述第一测温件和所述第一备用件发送而来的所述第一反光筒的温度的差值是否在预设范围内；所述第二控温件还用于判断分别由所述第二测温件和所述第二备用件发送而来的所述第二反光筒的温度的差值是否在预设范围内。
优选的，所述去气腔室还包括第一报警元件和第二报警元件，其中，
所述第一控温件在判断所述第一反光筒的温度的差值不在预设范围内时，控制所述第一报警元件进行报警；
所述第二控温件在判断所述第二反光筒的温度的差值不在预设范围内时，控制所述第二报警元件进行报警。
优选的，所述测温元件采用热电偶或红外传感器。
作为另一个技术方案，本发明还提供一种半导体处理设备，包括本发明提供的上述去气腔室。
本发明的有益效果：本发明提供的去气方法、去气腔室和半导体处理设备的技术方案中，首先加热去气腔室，以使其内部温度达到预设温度，并保持在该预设温度不变，然后将待去气基片传入去气腔室内进行恒温加热，并在加热设定时间段之后取出。通过将去气腔室内的温度始终保持在预设温度，不仅可以避免因腔室的初始温度不同造成不同批次的基片最终达到的温度不同的问题，从而可以提高不同批次的基片的品质一致性。通过将待去气基片恒温加热设定时间段之后取出，可以实现待去气基片的随入随出，即，任何时间都可以向去气腔室内传入任意数量的待去气基片，并在加热设定时间段之后即可取出，而无需等待前一批基片加热完毕并传出腔室之后才能进行下一批基片的工艺，从而提高了设备产能。同时，通过将待去气基片恒温加热设定时间段之后取出，还可以确保任意时间进入腔室内的基片均能够达到预设的目标温度，从而实现了对基片温度的准确控制。
附图说明
图1为现有技术中铜互连PVD工艺流程的示意图；
图2为本发明实施例1中去气方法的流程图；
图3为本发明实施例2中去气腔室的结构示意图；
图4为图3中去气腔室的结构俯视图。
其中的附图标记说明：
1.腔体；11.第一腔体；12.第二腔体；13.传片口；2.片盒；21.顶盖；22.底盖；23.基体；3.发光元件；31.第一光源件；32.第二光源件；4.反光筒；41.第一反光筒；411.顶板；42.第二反光筒；421.底板；5.测温元件；51.第一测温件；52.第二测温件；53.第一备用件；54.第二备用件；6.控制元件；61.第一控温件；62.第二控温件；7.升降机构；8.隔热件；9.第一报警元件；10.第二报警元件。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明所提供的一种去气方法、去气腔室和半导体处理设备作进一步详细描述。
实施例1：
本实施例提供一种去气方法，如图2所示，包括：
步骤S1：加热去气腔室，以使其内部温度达到预设温度，并保持在该预设温度不变。
步骤S2：将待去气基片传入去气腔室内，并在加热设定时间段之后取出。
步骤S1可以使去气腔室保持恒温状态，从而使进入去气腔室的基片能够被恒温加热。这可以避免因腔室的初始温度不同造成不同批次的基片最终达到的温度不同的问题，从而可以提高不同批次的基片的品质一致性。步骤S2可以实现待去气基片的随入随出，即，任何时间都可以向去气腔室内传入任意数量的待去气基片，并在加热设定时间段之后即可取出，而无需等待腔室内的所有基片加热完毕并传出腔室之后才能进行下一批基片的工艺，从而提高了设备产能。同时，通过将待去气基片恒温加热设定时间段之后取出，还可以确保任意时间进入腔室内的基片均能够达到预设的目标温度，从而实 现了对基片温度的准确控制。
在实际应用中，步骤S2中对基片加热时间可以根据具体情况而定，只要能够使基片最终达到目标温度即可。另外，可以通过程序对机械手的传片进行控制，以实现基片能够在加热指定时间之后取出。
优选的，步骤S1进一步包括：
步骤S11，加热去气腔室，以使其内部温度达到预设温度；
步骤S12，实时检测去气腔室的内部温度，并将该内部温度与预设温度进行差比较，然后根据比较结果控制去气腔室的内部温度，以使其保持在预设温度不变。
在步骤S12中，若内部温度与预设温度之间的差值超出允许的温度范围内，则增大或减小去气腔室的内部温度，直至内部温度与预设温度趋于一致，从而实现去气腔室的内部温度保持在预设温度不变。
通过实时检测去气腔室的内部温度，并根据该内部温度与预设温度调节去气腔室的内部温度，可以实现温度调节的闭环控制，从而可以实现对去气腔室的内部温度的精确控制。
由于去气腔室是对待去气基片进行恒温加热，待去气基片的目标温度与上述预设温度之间的差值是个固定值，因此，若已知待去气基片的目标温度，即可确定上述预设温度。例如，当预设温度为130℃时，待去气基片经加热一定时间之后达到其目标温度160℃。在这种情况下，当需要将待去气基片加热到160℃时，就需要将预设温度设置为130℃。
实施例2：
作为另一个技术方案，本发明实施例还提供一种去气腔室，其包括控温单元和控制单元，其中，控温单元用于加热去气腔室的内部，以使去气腔室的内部温度达到预设温度，并保持在该预设温度不变。控制单元用于将控制 机械手将待去气基片传入去气腔室内，并在加热设定时间段之后取出。控制单元可以为上位机等。
通过借助控温单元加热去气腔室，以使其内部温度达到预设温度，并保持在该预设温度不变，不仅可以避免因腔室的初始温度不同造成不同批次的基片最终达到的温度不同的问题，从而可以提高不同批次的基片的品质一致性。借助控制单元控制机械手将待去气基片传入去气腔室内，并在加热设定时间段之后取出，可以实现待去气基片的随入随出，即，任何时间都可以向去气腔室内传入任意数量的待去气基片，并在加热设定时间段之后即可取出，而无需等待前一批基片加热完毕并传出腔室之后才能进行下一批基片的工艺，从而提高了设备产能。同时，通过将待去气基片恒温加热设定时间段之后取出，还可以确保任意时间进入腔室内的基片均能够达到预设的目标温度，从而实现了对基片温度的准确控制。
优选的，温控单元包括加热元件、测温元件和控制元件，其中，加热元件用于加热所述去气腔室，以使其内部温度达到预设温度；测温元件用于实时检测去气腔室的内部温度，该测温元件采用热电偶或红外传感器等等。控制元件用于将该内部温度与预设温度进行差比较，然后根据比较结果控制加热元件，以使去气腔室的内部温度，保持在预设温度不变。
具体地，控制单元判断内部温度与预设温度之间的差值是否超出允许的温度范围内，若是，则增大或减小去气腔室的内部温度，直至内部温度与预设温度趋于一致，从而实现去气腔室的内部温度保持在预设温度不变。通过借助测温元件实时检测去气腔室的内部温度，并借助控制元件根据该内部温度与预设温度调节去气腔室的内部温度，可以实现温度调节的闭环控制，从而可以实现对去气腔室的内部温度的精确控制。
下面对本发明实施例提供的去气腔室的具体实施方式进行详细描述。具体地，如图3和图4所示，去气腔室还包括腔体1和用于承载待去气基片的 片盒2，其中，腔体1限定了去气腔室的加热空间。腔体1的侧壁上开设有传片口13，该传片口13用作基片传入或传出腔体1的通道；片盒2包括基体23、顶盖21和底盖22，其中，基体23设置有多个槽位，用于放置多个基片，而且，基体23的排布须考虑基片的可传输性，以防止基片通过机械手传输时碰撞到基体23。顶盖21和底盖22分别设置在基体23的相对两端，且顶盖21与腔体1的顶部相对，底盖22与腔体1的底部相对。基体23用于支撑顶盖21、底盖22以及位于其上的基片。片盒2为铝制材料，顶盖21和底盖22的存在使得位于片盒2内上下两端的基片也能受到灯管辐射而被较好的加热，减少了片盒2中间区域的基片和上下两端区域基片的温度差距。
加热元件3包括第一光源件31和第二光源件32，腔体1以传片口11为界分为第一腔体11和第二腔体12；第一光源件31位于第一腔体11内，第二光源件32位于第二腔体12内。第一光源件31和第二光源件32用于对片盒2内的基片进行加热。这样，片盒2内的基片无论是在传片口11的上方区域，还是在传片口11的下方区域，均可以得到光源的加热，从而确保了基片在去气工艺和取放片过程中的工艺温度均衡，进而不仅提高了基片的去气工艺质量，而且为后续工艺过程提供了更加洁净的基片。
在本实施例中，第一光源件31沿第一腔体11的周向而环绕第一腔体11设置于第一腔体11的侧壁的内侧；第二光源件32沿第二腔体12的周向而环绕第二腔体12设置于第二腔体12的侧壁的内侧；具体地，第一光源件31和第二光源件32在腔体1内沿竖直方向设置，且相对于传片口11对称，片盒2可在第一光源件31和第二光源件32环绕围成的空间内竖直移动，这能使片盒2无论移动到腔体1内的什么位置，片盒2内的基片都能受到第一光源件31或第二光源件32的均衡加热，这样，当有基片需要传入或者传出腔体1时，即便片盒2在第一腔体11和第二腔体12内的位置发生变动，其内的基片也能受到第一光源件31和/或第二光源件32的加热。
由于第一光源件31或第二光源件32环绕形成加热空间，其各自能够在片盒2的周围对其内的基片均匀加热，从而可以提高片盒2内的基片的温度均匀性。当然，在实际应用中，第一光源件或第二光源件还可以采用其他任意结构，只要其能够对片盒内的基片进行加热即可。
优选的，测温元件5可以通过检测片盒2的温度来获得去气腔室的内部温度，即，将片盒2的温度视为去气腔室的内部温度，这是因为片盒2的温度可以较为准确地反映去气腔室的内部温度，从而可以提高检测的准确度。或者，在片盒2上设置有检测基片(假基片)，测温元件5通过测量该检测基片的温度来获得去气腔室的内部温度，即，将该检测基片的温度视为去气腔室的内部温度，检测基片的温度同样可以较为准确地反映去气腔室的内部温度，从而可以提高检测的准确度。
在本实施例中，加热元件3还包括第一反光筒41和第二反光筒42，其中，第一反光筒41位于第一腔体11和第一光源件31之间；第二反光筒42位于第二腔体12和第二光源件32之间；第一反光筒41和第二反光筒42用于将照射到其上的光线朝向片盒2及其内的基片反射，即，第一反光筒41和第二反光筒42用于将热传递到其上的热量朝向片盒2及其内的基片反射。具体地，第一反光筒41为沿周向闭合的筒状结构，其沿第一光源件31的周向而环绕第一光源件31设置在第一光源件31和第一腔体11之间；第二反光筒42为沿周向闭合的筒状结构，其沿第二光源件32的周向而环绕第二光源件32设置在第二光源件32和第二腔体12之间；如此设置，能使第一光源件31和第二光源件32产生的热量很好地保持在筒内，从而提高第一光源件31和第二光源件32的热利用率，提升加热效率，同时确保第一反光筒41和第二反光筒42内的加热温度均衡，使片盒2内的基片能够被均匀加热。
其中，第一反光筒41包括顶板411，第二反光筒42包括底板421；顶板411盖合在第一反光筒41的远离传片口13的一端，底板421盖合在第二 反光筒42的远离传片口13的一端；顶板411和底板421用于将照射到其上的光线向腔体1内的待去气基片反射。顶板411和底板421的设置，使设置于腔体1内的反光筒4能够形成封闭的加热空间，从而确保腔体1内良好的保持预设温度的效果。
本实施例中，优选地，通过对第一反光筒41和第二反光筒42的内壁进行抛光和/或表面处理，能使照射到其上的光线发生漫反射和/或镜面反射。漫反射能使筒内第一光源件31和第二光源件32发出的光线照射均匀以及反射均匀，从而使筒内的加热能量更加均匀。镜面反射能使第一光源件31和第二光源件32发出的光线绝大部分都反射回筒内，从而减少了加热能量的损失，确保了筒内热量均衡。
在本实施例中，通过使第一反光筒41位于第一腔体11和第一光源件31之间；第二反光筒42位于第二腔体12和第二光源件32之间，可以实现将第一光源件31和第二光源件32分别于第一腔体11的侧壁和第二腔体12的侧壁隔离开，加之第一反光筒41和第二反光筒42的上述结构及材质，能够分别在第一腔体11和第二腔体12内形成一个相对密闭和恒定高温的环境。在恒定高温环境下，第一腔体11和第二腔体12内各部件的吸热和散热保持平衡。当基片被传入到腔体1内时，单个基片的热容量相对整个腔体1内的热容量相对小很多，故腔体1内的部件对于基片本身都是一个热源，因此基片会在第一反光筒41和第二反光筒42、第一光源件31和第二光源件32的热辐射的作用下快速达到热平衡状态。
测温元件5包括第一测温件51和第二测温件52，其中，第一测温件51用于通过检测第一反光筒41的温度来获得第一腔体11的内部温度；第二测温件52用于通过检测第二反光筒42的温度来获得第二腔体12的内部温度。相应的，控制元件6包括第一控温件61和第二控温件62，其中，第一控温件61用于接收由第一测温件51发送而来的第一腔体11的内部温度，并将该 内部温度与预设温度进行差比较，然后根据比较结果控制第一光源件31，以使第一腔体11的内部温度，保持在预设温度不变。第二控温件62用于接收由第二测温件52发送而来的第二腔体12的内部温度，并将该内部温度与预设温度进行差比较，然后根据比较结果控制第二光源件32，以使第二腔体12的内部温度，保持在预设温度不变。这样，可以分别对第一腔体11和第二腔体12温度调节的闭环控制，从而可以实现分别对第一腔体11和第二腔体12的内部温度的精确控制。
优选的，测温元件5还包括第一备用件53和第二备用件54，其中，第一备用件53用于检测第一反光筒41的温度，并将该温度反馈给第一控温件61；第二备用件54用于检测第二反光筒42的温度，并将该温度反馈给第二控温件62。第一控温件61还用于判断分别由第一测温件51和第一备用件53发送而来的第一反光筒41的温度的差值是否在预设范围内；第二控温件62还用于判断分别由第二测温件52和第二备用件54发送而来的第二反光筒42的温度的差值是否在预设范围内。借助第一备用件53和第二备用件54，可以分别对第一测温件51和第二测温件52的工作情况是否正常进行监控，从而防止第一测温件51和第二测温件52因意外损坏而使第一控温件61和第二控温件62获得的反馈温度有误，避免因此而导致的温度控制出现异常。
进一步优选的，去气腔室还包括第一报警元件9和第二报警元件10，其中，第一控温件61在判断第一反光筒41的温度的差值不在预设范围内时，控制第一报警元件9进行报警；第二控温件62在判断第二反光筒42的温度的差值不在预设范围内时，控制第二报警元件10进行报警。借助第一报警元件9和第二报警元件10，可以及时获知温度控制出现异常。
需要说明的是，在本实施例中，第一测温件51和第二测温件52采用热电偶，二者分别安装在第一反光筒41和第二反光筒42上，采用接触的方式进行测量。但是，本发明并不局限于此，在实际应用中，第一测温件51和第 二测温件52也可以采用诸如红外传感器等的非接触的方式式测量。在测量时，只要将红外传感器的测量面对准反光筒，并将红外传感器的测量面与反光筒之间的距离调整到红外传感器的测量范围内即可。
另外，去气腔室还包括升降机构7，升降机构7贯穿腔体1的底部，并与片盒2的底盖22连接，用于驱动片盒2升降以将片盒2中的放置于不同高度位置的基片传输到传片口13所对应的高度位置，以便取放片。另外，在升降机构7与底盖22的连接处设置有隔热件8，用于隔绝片盒2与升降机构7之间的热传导。
上述去气腔室的具体去气过程为：在开始加热待去气基片之前，加热元件3在控制元件6的控制下，输出较大功率对腔体1快速加热到预设温度。当腔体1内部组件的温度达到预设温度后，加热元件3在控制元件6的控制下，输出较小功率将腔体1内的温度维持在恒定的预设温度。工艺开始，自传片口13接收一个或多个基片，并通过升降机构7的升降将基片放置于片盒2中的不同高度位置；片盒2在升降机构7的带动下运动至靠近加热元件3的去气工艺位置上；当基片达到预设的目标温度之后，升降机构7带动片盒2运动至传片口13所对应的高度位置，由机械手取走一些基片；向片盒2中补充基片；重复上述装载和卸载基片的过程，直至待去气的基片均完成去气工艺。
实施例3：
本实施例提供一种半导体处理设备，包括本发明上述实施例提供的去气腔室。
本发明实施例提供的半导体处理设备，其通过采用本发明实施例提供的上述去气腔室，不仅可以提高同一批次基片和不同批次基片的温度均匀性，而且可以实现待去气基片的随入随出，从而可以提高设备产能。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (13)

  1. 一种去气方法，其特征在于，包括：
    步骤S1：加热去气腔室，以使其内部温度达到预设温度，并保持在该预设温度不变；
    步骤S2：将待去气基片传入所述去气腔室内，并在加热设定时间段之后取出。
  2. 根据权利要求1所述的去气方法，其特征在于，所述步骤S1进一步包括：
    加热去气腔室，以使其内部温度达到预设温度；
    实时检测所述去气腔室的内部温度，并将该内部温度与所述预设温度进行差比较，然后根据比较结果控制所述去气腔室的内部温度，以使其保持在所述预设温度不变。
  3. 一种去气腔室，其特征在于，包括：
    控温单元，用于加热所述去气腔室的内部，以使所述去气腔室的内部温度达到预设温度，并保持在该预设温度不变；
    控制单元，用于控制机械手将待去气基片传入所述去气腔室内，并在加热设定时间段之后取出。
  4. 根据权利要求3所述的去气腔室，其特征在于，所述温控单元包括：
    加热元件，用于加热所述去气腔室，以使其内部温度达到预设温度；
    测温元件，用于实时检测所述去气腔室的内部温度；
    控制元件，用于将该内部温度与所述预设温度进行差比较，然后根据比较结果控制所述加热元件，以使所述去气腔室的内部温度，保持在所述预设温度不变。
  5. 根据权利要求4所述的去气腔室，其特征在于，所述去气腔室还包括腔体和用于承载所述待去气基片的片盒；所述腔体的侧壁上开设有传片口，所述传片口用作所述基片传入或传出所述腔体的通道；所述片盒在所述腔体内可沿竖直方向移动；
    所述加热元件包括第一光源件和第二光源件，所述腔体以所述传片口为界分为第一腔体和第二腔体；所述第一光源件位于所述第一腔体内，所述第二光源件位于所述第二腔体内；所述第一光源件和所述第二光源件用于对所述片盒内的所述待去气基片进行加热。
  6. 根据权利要求5所述的去气腔室，其特征在于，所述测温元件通过检测所述片盒的温度来获得所述去气腔室的内部温度；或者，
    在所述片盒上设置有检测基片，所述测温元件用于通过测量所述检测基片的温度来获得所述去气腔室的内部温度。
  7. 根据权利要求5所述的去气腔室，其特征在于，所述加热元件还包括第一反光筒和第二反光筒，其中，所述第一反光筒位于所述第一腔体和所述第一光源件之间；所述第二反光筒位于所述第二腔体和所述第二光源件之间；
    所述第一反光筒和所述第二反光筒用于将照射到其上的光线向所述片盒内的所述待去气基片反射。
  8. 根据权利要求7所述的去气腔室，其特征在于，所述第一反光筒包括顶板，所述第二反光筒包括底板；所述顶板盖合在所述第一反光筒的远离所述传片口的一端，所述底板盖合在所述第二反光筒的远离所述传片口的一端；
    所述顶板和所述底板用于将照射到其上的光线向所述腔体内的所述待 去气基片反射。
  9. 根据权利要求7所述的去气腔室，其特征在于，所述测温元件包括第一测温件和第二测温件，其中，所述第一测温件用于通过检测所述第一反光筒的温度来获得所述第一腔体的内部温度；所述第二测温件用于通过检测所述第二反光筒的温度来获得所述第二腔体的内部温度；
    所述控制元件包括第一控温件和第二控温件，其中，所述第一控温件用于接收由所述第一测温件发送而来的所述第一腔体的内部温度，并将该内部温度与所述预设温度进行差比较，然后根据比较结果控制所述第一光源件，以使所述第一腔体的内部温度，保持在所述预设温度不变；所述第二控温件用于接收由所述第二测温件发送而来的所述第二腔体的内部温度，并将该内部温度与所述预设温度进行差比较，然后根据比较结果控制所述第二光源件，以使所述第二腔体的内部温度，保持在所述预设温度不变。
  10. 根据权利要求9所述的去气腔室，其特征在于，所述测温元件还包括第一备用件和第二备用件，其中，所述第一备用件用于检测所述第一反光筒的温度；所述第二备用件用于检测所述第二反光筒的温度；
    所述第一控温件还用于判断分别由所述第一测温件和所述第一备用件发送而来的所述第一反光筒的温度的差值是否在预设范围内；所述第二控温件还用于判断分别由所述第二测温件和所述第二备用件发送而来的所述第二反光筒的温度的差值是否在预设范围内。
  11. 根据权利要求10所述的去气腔室，其特征在于，所述去气腔室还包括第一报警元件和第二报警元件，其中，
    所述第一控温件在判断所述第一反光筒的温度的差值不在预设范围内时，控制所述第一报警元件进行报警；
    所述第二控温件在判断所述第二反光筒的温度的差值不在预设范围内 时，控制所述第二报警元件进行报警。
  12. 根据权利要求4所述的去气腔室，其特征在于，所述测温元件采用热电偶或红外传感器。
  13. 一种半导体处理设备，其特征在于，包括权利要求3-12任意一项所述的去气腔室。
PCT/CN2017/075973 2016-09-27 2017-03-08 一种去气方法、去气腔室和半导体处理设备 Ceased WO2018058898A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019516393A JP7012708B2 (ja) 2016-09-27 2017-03-08 脱気方法、脱気チャンバ、および半導体処理装置
KR1020197005638A KR102247259B1 (ko) 2016-09-27 2017-03-08 가스 제거 방법, 가스 제거 챔버 및 반도체 처리 설비
US16/366,392 US20190218660A1 (en) 2016-09-27 2019-03-27 Degassing method, degassing chamber, and semiconductor processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610854815.5A CN107868942B (zh) 2016-09-27 2016-09-27 一种去气腔室及其去气方法和半导体处理设备
CN201610854815.5 2016-09-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/366,392 Continuation US20190218660A1 (en) 2016-09-27 2019-03-27 Degassing method, degassing chamber, and semiconductor processing apparatus

Publications (1)

Publication Number Publication Date
WO2018058898A1 true WO2018058898A1 (zh) 2018-04-05

Family

ID=61752025

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/075973 Ceased WO2018058898A1 (zh) 2016-09-27 2017-03-08 一种去气方法、去气腔室和半导体处理设备

Country Status (6)

Country Link
US (1) US20190218660A1 (zh)
JP (1) JP7012708B2 (zh)
KR (1) KR102247259B1 (zh)
CN (1) CN107868942B (zh)
TW (1) TWI715742B (zh)
WO (1) WO2018058898A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI823442B (zh) * 2018-10-28 2023-11-21 美商應用材料股份有限公司 具有退火迷你環境的處理腔室
CN111799191B (zh) * 2019-04-09 2023-11-14 北京北方华创微电子装备有限公司 半导体晶片处理腔室及半导体处理设备
CN116772520B (zh) * 2023-06-19 2026-01-09 上海超硅半导体股份有限公司 一种去除晶圆盒湿度的方法
WO2025188670A1 (en) * 2024-03-05 2025-09-12 Lam Research Corporation Degas module for pulsed laser deposition

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411973A (en) * 1987-07-02 1989-01-17 Ulvac Corp In-line type film forming device
JPH0445261A (ja) * 1990-06-08 1992-02-14 Matsushita Electric Ind Co Ltd 真空部材の脱ガス方法と真空部材および電子ビーム発生装置
CN101256941A (zh) * 2007-02-27 2008-09-03 东京毅力科创株式会社 被处理体的热处理装置、被处理体的热处理方法和存储计算机可读取程序的存储介质
CN202246836U (zh) * 2011-07-22 2012-05-30 上海奕瑞光电子科技有限公司 电阻加热式蒸发源
CN103149952A (zh) * 2013-01-29 2013-06-12 清华大学 利用激光熔覆加工轧辊的温控装置以及温控方法
CN103668073A (zh) * 2012-08-31 2014-03-26 北京北方微电子基地设备工艺研究中心有限责任公司 去气腔室及物理气相沉积设备
CN105441899A (zh) * 2014-07-15 2016-03-30 北京北方微电子基地设备工艺研究中心有限责任公司 一种加热腔室及半导体加工设备
CN105789084A (zh) * 2014-12-17 2016-07-20 北京北方微电子基地设备工艺研究中心有限责任公司 加热腔室以及半导体加工设备

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5259881A (en) * 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
JPH03160716A (ja) * 1989-11-20 1991-07-10 Kyushu Electron Metal Co Ltd サセプターの温度制御方法
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
US5418885A (en) * 1992-12-29 1995-05-23 North Carolina State University Three-zone rapid thermal processing system utilizing wafer edge heating means
US5660472A (en) * 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US5900177A (en) * 1997-06-11 1999-05-04 Eaton Corporation Furnace sidewall temperature control system
US6352593B1 (en) * 1997-08-11 2002-03-05 Torrex Equipment Corp. Mini-batch process chamber
US6310328B1 (en) * 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
US6293696B1 (en) * 1999-05-03 2001-09-25 Steag Rtp Systems, Inc. System and process for calibrating pyrometers in thermal processing chambers
TW424265B (en) * 1999-10-06 2001-03-01 Mosel Vitelic Inc Method for stabilizing semiconductor degas temperature
JP4186365B2 (ja) * 2000-01-25 2008-11-26 東京エレクトロン株式会社 温度測定方法、温度制御方法及び熱処理装置
JP3479020B2 (ja) * 2000-01-28 2003-12-15 東京エレクトロン株式会社 熱処理装置
JP5021112B2 (ja) * 2000-08-11 2012-09-05 キヤノンアネルバ株式会社 真空処理装置
KR100650342B1 (ko) * 2000-12-27 2006-11-27 엘지.필립스 엘시디 주식회사 Ｕｖ 세정장치
US6740196B2 (en) * 2002-02-21 2004-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. RTA chamber with in situ reflective index monitor
JP2004119668A (ja) * 2002-09-26 2004-04-15 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法
KR20060028869A (ko) * 2004-09-30 2006-04-04 삼성전자주식회사 반도체 제조설비의 베이크장치
US7368303B2 (en) * 2004-10-20 2008-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method for temperature control in a rapid thermal processing system
US20060291833A1 (en) * 2005-06-01 2006-12-28 Mattson Techonology, Inc. Switchable reflector wall concept
JP2006344738A (ja) * 2005-06-08 2006-12-21 Renesas Technology Corp 半導体装置の製造方法
JP5036172B2 (ja) * 2005-11-21 2012-09-26 株式会社日立国際電気 基板処理装置、基板処理方法および半導体装置の製造方法
US7860379B2 (en) * 2007-01-15 2010-12-28 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
JP5169055B2 (ja) * 2007-07-30 2013-03-27 ウシオ電機株式会社 半導体ウエハ加熱処理装置
US8524004B2 (en) * 2010-06-16 2013-09-03 Applied Materials, Inc. Loadlock batch ozone cure
JP5696576B2 (ja) * 2011-04-25 2015-04-08 東京エレクトロン株式会社 温度測定用基板及び熱処理装置
CN102820206B (zh) * 2011-06-10 2015-02-25 北京北方微电子基地设备工艺研究中心有限责任公司 热反射装置及半导体处理设备
TWM424265U (en) * 2011-10-06 2012-03-11 Daiwoo Electronic Co Ltd View-angle adjustable lens structure for vehicle video recorder
GB201421151D0 (en) * 2014-11-28 2015-01-14 Spts Technologies Ltd Method of degassing
CN107871681B (zh) * 2016-09-27 2019-10-08 北京北方华创微电子装备有限公司 一种去气腔室和半导体处理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411973A (en) * 1987-07-02 1989-01-17 Ulvac Corp In-line type film forming device
JPH0445261A (ja) * 1990-06-08 1992-02-14 Matsushita Electric Ind Co Ltd 真空部材の脱ガス方法と真空部材および電子ビーム発生装置
CN101256941A (zh) * 2007-02-27 2008-09-03 东京毅力科创株式会社 被处理体的热处理装置、被处理体的热处理方法和存储计算机可读取程序的存储介质
CN202246836U (zh) * 2011-07-22 2012-05-30 上海奕瑞光电子科技有限公司 电阻加热式蒸发源
CN103668073A (zh) * 2012-08-31 2014-03-26 北京北方微电子基地设备工艺研究中心有限责任公司 去气腔室及物理气相沉积设备
CN103149952A (zh) * 2013-01-29 2013-06-12 清华大学 利用激光熔覆加工轧辊的温控装置以及温控方法
CN105441899A (zh) * 2014-07-15 2016-03-30 北京北方微电子基地设备工艺研究中心有限责任公司 一种加热腔室及半导体加工设备
CN105789084A (zh) * 2014-12-17 2016-07-20 北京北方微电子基地设备工艺研究中心有限责任公司 加热腔室以及半导体加工设备

Also Published As

Publication number Publication date
CN107868942B (zh) 2019-11-29
TW201823492A (zh) 2018-07-01
KR102247259B1 (ko) 2021-04-30
CN107868942A (zh) 2018-04-03
TWI715742B (zh) 2021-01-11
US20190218660A1 (en) 2019-07-18
JP7012708B2 (ja) 2022-01-28
JP2019535137A (ja) 2019-12-05
KR20190033592A (ko) 2019-03-29

Similar Documents

Publication Publication Date Title
KR101314001B1 (ko) 온도 제어 방법, 온도 조절기 및 열처리 장치
US7371998B2 (en) Thermal wafer processor
US10405376B2 (en) Apparatus and method for treating substrate
WO2018058898A1 (zh) 一种去气方法、去气腔室和半导体处理设备
US7432475B2 (en) Vertical heat treatment device and method controlling the same
WO2017059645A1 (zh) 加热装置以及加热腔室
KR20200110122A (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
JP6823709B2 (ja) 半導体装置の製造方法、基板処理装置およびプログラム
WO2021131276A1 (ja) 熱処理装置、および、熱処理方法
KR102922742B1 (ko) 기판 처리 장치, 처리 방법, 반도체 장치의 제조 방법 및 프로그램
JP2009302177A (ja) 基板処理装置
KR102890044B1 (ko) 기판처리장치, 온도측정방법 및 온도제어방법
US10837112B2 (en) Substrate processing apparatus
JP2010080555A (ja) 基板処理装置
US20240282600A1 (en) Light irradiation type heat treatment method and heat treatment apparatus
TWI658530B (zh) 去氣腔室和半導體處理裝置
TWI840596B (zh) 使用非接觸溫度測量來處理基板之方法及設備
KR101458962B1 (ko) 급속 열처리 장치
KR20200021679A (ko) 기판 처리 장치 및 방법
KR20230041594A (ko) 열처리 장치 및 열처리 방법
KR102225759B1 (ko) 열처리 방법 및 열처리 장치
CN120700446B (zh) 一种晶圆加热、冷却处理集成腔及其控制方法
JP2010080537A (ja) 基板処理装置
KR20210110223A (ko) 열처리 방법
CN120683456B (zh) 一种双晶圆处理腔及其控制方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17854358

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20197005638

Country of ref document: KR

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2019516393

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17854358

Country of ref document: EP

Kind code of ref document: A1