WO2018058877A1 - 去气腔室和半导体处理装置 - Google Patents

去气腔室和半导体处理装置 Download PDF

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Publication number
WO2018058877A1
WO2018058877A1 PCT/CN2017/073057 CN2017073057W WO2018058877A1 WO 2018058877 A1 WO2018058877 A1 WO 2018058877A1 CN 2017073057 W CN2017073057 W CN 2017073057W WO 2018058877 A1 WO2018058877 A1 WO 2018058877A1
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WIPO (PCT)
Prior art keywords
light source
cavity
source member
reflecting
cassette
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/073057
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English (en)
French (fr)
Inventor
贾强
丁培军
赵梦欣
王厚工
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Beijing NMC Co Ltd
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Beijing NMC Co Ltd
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Filing date
Publication date
Application filed by Beijing NMC Co Ltd filed Critical Beijing NMC Co Ltd
Priority to KR1020217006272A priority Critical patent/KR102242289B1/ko
Priority to JP2019538294A priority patent/JP6921964B2/ja
Priority to KR1020197005639A priority patent/KR20190039167A/ko
Publication of WO2018058877A1 publication Critical patent/WO2018058877A1/zh
Priority to US16/364,985 priority patent/US11328940B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

Definitions

  • the present invention relates to the field of semiconductor device fabrication, and in particular to a degassing chamber and a semiconductor processing device.
  • PVD Physical Vapor Deposition
  • a Degas process step is usually required to remove impurities such as water vapor adsorbed by the substrate in the atmosphere, to clean the surface of the substrate, and to provide a substrate as clean as possible for subsequent processes.
  • the degassing process step is included in the copper interconnect PVD process flow shown in FIG.
  • FIG. 2 shows a conventional degassing heating system which mainly includes a vacuum chamber 4, a cassette 2, a lifting system 5, and a light source 6.
  • the vacuum chamber 4 provides a process environment, and a film opening 11 is opened on the side wall thereof for transferring the substrate to or into the vacuum chamber 4;
  • the cassette 2 is for carrying a plurality of substrates;
  • the lifting system 5 It is used to drive the cassette 2 to be lifted and lowered to transport the substrates placed in different height positions in the cassette 2 to the height positions corresponding to the transfer opening 11 for picking up and dropping the sheets;
  • the light source 6 is for supplying heat.
  • the working process of the above degassing heating system is as follows: 1) the auto-transmission port 11 receives a plurality of substrates of a batch, and the plurality of substrates are placed at different height positions in the cassette 2 by lifting of the lifting system 5; 2) The cassette 2 is moved by the lifting system 5 to a degassing process position near the light source 6; 3) the light source 6 is turned on, the substrate is heated to perform a degassing operation; 4) the light source 6 is turned off, and the lifting system 5 drives the sheet The box 2 is moved to the height position corresponding to the film opening 11, the substrate is taken away by the robot; 5) the substrate is replenished to the cassette 2; 6) steps 1) to 5) are repeated until the substrate to be degassed The degassing process is completed.
  • the film cassette 2 In the actual degassing process, since the film opening 11 is located below the light source 6, each time the film is taken and removed, the film cassette 2 needs to be moved downward from the position corresponding to the light source 6 to the position corresponding to the film opening 11. Thus, the cassette 2 is deviated from the position corresponding to the light source 6, resulting in a decrease in the temperature of the cassette 2 together with the substrate therein, and the degree of temperature drop of the substrate is not controllable, and, due to the base in the cassette 2 The sheets are not completely removed at the same drop of the cassette 2, so the temperature at which each of the substrates is taken out of the cassette 2 is not a controllable ideal temperature and the temperature is also inconsistent, which will affect the consistency of subsequent process results and stability.
  • the present invention is directed to the above-described technical problems existing in the prior art, and provides a degassing chamber and a semiconductor processing apparatus.
  • the degassing chamber enables the substrate in the cassette to be heated by the light source whether in the upper area of the transfer opening or in the lower area of the transfer opening, thereby ensuring the degassing process and the picking and dropping process of the substrate.
  • the process temperature in the process is balanced.
  • the invention provides a degassing chamber, comprising a cavity and a cassette, the side wall of the cavity is provided with a film opening for transferring the substrate into or out of the cavity
  • the cassette is movable in a vertical direction within the cavity, and further includes a heating assembly disposed within the cavity, the heating assembly including a first light source member and a second light source member, the cavity being The film opening is divided into a first cavity and a second cavity; the first light source is located in the first cavity, and the second light source is located in the second cavity; the first light source And the second light source member for equalizing heating of the substrate in the cassette.
  • the heating assembly further includes a first reflecting tube and a second reflecting tube, the first reflecting tube being located between the first cavity and the first light source; the second reflecting tube is located at the Between the second cavity and the second light source member;
  • the first reflector and the second reflector are for reflecting light impinging thereon toward the substrate within the cassette.
  • the first reflector and the second reflector are butted together, and a first opening is provided at a position corresponding to the film opening, and the first opening enables the substrate to pass.
  • the heating assembly further includes a first reflector and a second reflector, the first reflector covering an end of the first reflector away from the film opening, the second reflector cover Engaging at an end of the second reflector that is away from the film opening;
  • the first reflecting plate and the second reflecting plate are for reflecting light irradiated thereon toward the substrate in the cassette.
  • the first light source member includes a plurality of first line light sources, the plurality of first line light sources are parallel to each other and enclose; the length direction of the first line light source is parallel to the movement of the cassette direction;
  • the second light source member includes a plurality of second line light sources, the plurality of second line light sources are parallel to each other and enclose a circle; the length direction of the second line light source is parallel to a moving direction of the cassette; the cassette It is movable in a space surrounded by the first line source and the second line source.
  • the inner walls of the first reflector and the second reflector enable diffuse reflection and/or specular reflection of the light impinging thereon.
  • the first reflecting plate facing the inner wall of the first reflecting cylinder and the second reflecting plate facing the inner wall of the second reflecting cylinder can diffusely reflect the light irradiated thereon / or specular reflection.
  • the first reflector and the second reflector are made of stainless steel.
  • the first reflector and the second reflector are made of stainless steel.
  • the present invention also provides a semiconductor processing apparatus including the above described degassing chamber.
  • the degassing chamber provided by the present invention can be made by disposing a first light source member and a second light source member respectively in the first cavity and the second cavity by dividing the film opening.
  • the substrate in the box can be heated by the light source whether it is in the upper area of the film opening or in the lower area of the film opening, thereby ensuring the process temperature balance of the substrate during the degassing process and the picking and placing process. Not only improves the quality of the degassing process of the substrate, but also provides a cleaner process for the subsequent process.
  • the substrate is
  • the semiconductor processing apparatus provided by the present invention improves the processing quality of the semiconductor processing apparatus by employing the above-described degassing chamber.
  • FIG. 1 is a schematic diagram of a process flow of a copper interconnect PVD in the prior art
  • Figure 2 is a cross-sectional view showing the structure of a prior art degassing heating system
  • Embodiment 3 is a schematic structural view of a degassing chamber in Embodiment 1 of the present invention.
  • Figure 4 is a schematic structural view of the first light source member of Figure 3;
  • Figure 5 is a schematic exploded view showing the structure of the degassing chamber in the first embodiment of the present invention.
  • FIG. 6 is a schematic exploded view showing the structure of a first light source member according to Embodiment 1 of the present invention.
  • Figure 7 is a cross-sectional view showing the structure of a second light source member in Embodiment 1 of the present invention.
  • the embodiment provides a degassing chamber, as shown in FIG. 3, including a cavity 1 and a cassette 2.
  • the side wall of the cavity 1 is provided with a film opening 11 for transmitting or transmitting the substrate.
  • the passage of the chamber 1; the cassette 2 is movable in the vertical direction in the chamber 1.
  • the degassing chamber further includes a heating assembly 3 disposed in the cavity 1.
  • the heating assembly 3 includes a first light source member 31 and a second light source member 32.
  • the cavity 1 is divided into a first cavity 12 by a film opening 11 and The second cavity 13; the first light source member 31 is located in the first cavity 12, and the second light source member 32 is located in the second cavity 13.
  • the first light source member 31 and the second light source member 32 are for heating the substrate in the cassette 2.
  • the substrate in the film cassette 2 can be heated by the light source whether in the upper region of the film opening 11 or in the lower region of the film opening 11, thereby ensuring the substrate in the degassing process and the picking and placing process.
  • the process temperature is balanced, which in turn not only improves the degassing process quality of the substrate, but also provides a cleaner substrate for subsequent processes.
  • the first light source member 31 is disposed around the first cavity 12 in the circumferential direction of the first cavity 12 on the inner side of the sidewall of the first cavity 12; the second light source member 32 is along the circumferential direction of the second cavity 13
  • the second cavity 13 is disposed on the inner side of the sidewall of the second cavity 13; specifically, the first light source member 31 and the second light source member 32 are disposed in the vertical direction in the cavity 1 and are opposite to the film opening 11 symmetrical, the cassette 2 can be vertically moved in a space surrounded by the first light source member 31 and the second light source member 32, which enables the cassette 2 to move into the position inside the chamber 1 in the cassette 2
  • the substrate can be heated by the equalization of the first light source member 31 or the second light source member 32, so that when the substrate needs to be introduced into or out of the cavity 1, even if the film cartridge 2 is in the first cavity 12 and The position within the two chambers 13 is varied, and the substrate therein can also be heated by the first light source member 31 and/or the second
  • the first light source member 31 or the second light source member 32 surrounds the heating space, each of which can uniformly heat the substrate therein around the cassette 2, the temperature uniformity of the substrate in the cassette 2 can be improved.
  • the first light source member or the second light source member may adopt any other structure as long as it can heat the substrate in the cassette.
  • the first light source member 31 includes a plurality of first line light sources 300.
  • the length direction of each of the first line light sources 300 is the moving direction of the cassette 2, and the plurality of first line sources are 300 They are parallel to each other and arranged in a circle along the circumferential direction of the cavity 1.
  • the second light source member 32 includes a plurality of second line light sources, each of which has a longitudinal direction of the moving direction of the cassette 2, and the plurality of second line sources are parallel to each other and arranged in a circle along the circumferential direction of the cavity 1. .
  • the upper ends of the plurality of first line sources 300 are connected to the first conductive ring 311, and the lower ends of the plurality of first line sources 300 are connected to the second conductive ring 312, such that a plurality of first The line source 300 is connected in parallel by means of the first conductive ring 311 and the second conductive ring 312.
  • the upper ends of the plurality of second line sources are connected to the third conductive ring, and the lower ends of the plurality of second line sources are connected to the fourth conductive ring, such that the plurality of second line sources are connected to the third The conductive ring and the fourth conductive ring are connected in parallel.
  • the cassette 2 is movable in a space surrounded by the first line source 300 and the second line source.
  • the spacing of any two adjacent first line light sources 300 is equal, and any two second line light sources are made.
  • the spacing is equal.
  • the heating assembly 3 further includes a first reflector 33 and a second reflector 34.
  • the first reflector 33 is located between the first cavity 12 and the first source member 31; the second reflector 34 is located at the second Between the cavity 13 and the second light source member 32; the first reflector 33 and the second reflector 34 are used to reflect the light irradiated thereon toward the cassette 2 and the substrate therein, that is, the first reflector 33 and the second reflector 34 are used to reflect heat transferred thereto toward the cassette 2 and the substrate therein.
  • the first reflecting cylinder 33 is a cylindrical structure that is closed in the circumferential direction, and is disposed between the first light source member 31 and the first cavity 12 around the first light source member 31 along the circumferential direction of the first light source member 31.
  • the second reflecting cylinder 34 is a cylindrical structure that is closed in the circumferential direction, and is disposed around the second light source member 32 between the second light source member 32 and the second cavity 13 along the circumferential direction of the second light source member 32; It is provided that the heat generated by the first light source member 31 and the second light source member 32 can be well held in the cylinder, thereby improving the first light source member 31 and the second light.
  • the heat utilization rate of the source member 32 enhances the heating efficiency while ensuring that the heating temperatures in the first reflecting cylinder 33 and the second reflecting cylinder 34 are equalized, so that the substrate in the cassette 2 can be uniformly heated.
  • the first reflecting cylinder 33 and the second reflecting cylinder 34 are butted integrally, and a first opening 30 is provided at a position corresponding to the film opening 11 thereon, and the first opening 30 enables the substrate to pass therethrough.
  • the butting integrated first reflecting cylinder 33 and the second reflecting cylinder 34 can better maintain the heating energy in the cylinder, thereby better improving the heat utilization rate of the first light source member 31 and the second light source member 32, and improving The heating efficiency is ensured while ensuring a uniform heating temperature in the first reflecting cylinder 33 and the second reflecting cylinder 34 which are integrally formed.
  • the first opening 30 corresponds to the film opening 11 to facilitate the entry and exit of the substrate into the cavity 1.
  • the light irradiated thereon can be diffusely reflected and/or specularly reflected.
  • the diffuse reflection can make the light emitted by the first light source member 31 and the second light source member 32 in the cylinder uniform and uniform in reflection, thereby making the heating energy in the cylinder more uniform.
  • the specular reflection can cause most of the light emitted by the first light source member 31 and the second light source member 32 to be reflected back into the cylinder, thereby reducing the loss of heating energy and ensuring the heat balance in the cylinder.
  • the heating assembly 3 further includes a first reflecting plate 35 and a second reflecting plate 36.
  • the first reflecting plate 35 is closed at one end of the first reflecting tube 33 away from the film opening port 11, and the second reflecting plate 36 is covered.
  • the first reflecting plate 35 and the second reflecting plate 36 are for reflecting the light irradiated thereon to the film cassette 2 and the substrate therein.
  • the first reflecting plate 35 and the second reflecting plate 36 are disposed such that the tube formed by the first reflecting tube 33 and the second reflecting tube 34 abutting forms a closed space, and the first reflecting plate 35 and the second reflecting plate 36 are disposed.
  • the heating energy in the closed space in the cylinder can be better maintained therein, thereby improving the heat utilization rate of the first light source member 31 and the second light source member 32, improving the heating efficiency, and reducing the cavity 1
  • the external environment interferes with the closed environment in the cylinder, ensures that the heating environment in the sealed space formed in the cylinder is balanced, and ensures that the substrate in the sealed space formed in the cylinder can be uniformly heated.
  • the wall faces opposite to each other by the first reflecting plate 35 and the second reflecting plate 36 i.e., the inner wall of the first reflecting plate 35 and the inner wall of the second reflecting plate 36
  • the diffuse reflection can make the light emitted by the first light source member 31 and the second light source member 32 in the cylinder uniform and uniform in reflection, thereby making the heating energy in the cylinder more uniform.
  • the specular reflection can cause most of the light emitted by the first light source member 31 and the second light source member 32 to be reflected back into the cylinder, thereby reducing the loss of heating energy and ensuring the utilization and balance of heat in the cylinder.
  • the first reflecting cylinder 33, the second reflecting cylinder 34, the first reflecting plate 35 and the second reflecting plate 36 may be made of stainless steel.
  • the stainless steel material conducts heat well and makes the heat inside the cylinder more uniform.
  • the first reflector 33 and the second reflector 34, and the first reflector 35 and the second reflector 36 may be made of other materials such as ceramics.
  • the first light source member 31 includes a plurality of first line light sources 300.
  • the length direction of each of the first line light sources 300 is the moving direction of the cassette 2, and the plurality of first line sources are The 300 are parallel to each other and arranged in a circle along the circumferential direction of the cavity 1.
  • the second light source member 32 includes a plurality of second line light sources, each of which has a longitudinal direction of the moving direction of the cassette 2, and the plurality of second line sources are parallel to each other and arranged in a circle along the circumferential direction of the cavity 1. .
  • the upper ends of the plurality of first line light sources 300 are connected to the first conductive ring 331, and the lower ends of the plurality of first line light sources 300 are connected to the second conductive ring 332.
  • the plurality of first line light sources 300 are connected in parallel by means of the first conductive ring 331 and the second conductive ring 332, that is, the first conductive ring 331 and the second conductive ring 332 are used as positive and negative commons of each of the first line light sources 300. electrode.
  • the second line source is electrically connected to the first line source 300.
  • the upper ends of the plurality of second line sources are connected to the third conductive ring, and the lower ends of the plurality of second line sources are connected to the fourth conductive ring.
  • the second line source is connected in parallel by means of a third conductive ring and a fourth conductive ring, ie, the third conductive ring and the fourth conductive ring are used as positive and negative common electrodes of each of the second line sources.
  • the cassette 2 is movable in a space surrounded by the first line source 300 and the second line source.
  • the first light source member 31 and the second light source member 32 in order to enable the first light source member 31 and the second light source member 32 to be uniformly heated within a range of 360 degrees, The spacing of any two adjacent first line sources 300 is made equal, and the spacing of any two second line sources is made equal.
  • the heating energy and temperature in the space surrounded by the first line light source 300 and the second line light source can be kept uniform, so that the substrate in the cassette 2 is heated. Evenly.
  • the degassing chamber includes a cavity 1, a cassette 2, a lifting system 5, a reflective cylinder 7, a first light source member 31, and a second light source member 32, and is powered on.
  • the short assembly 81, the upper power connection long assembly 91, the lower power connection short assembly 82, and the lower power connection long assembly 92 are connected.
  • the lower electrical connection short assembly 82 and the lower electrical connection long assembly 92 are electrically connected to the positive and negative common electrodes (the third conductive ring and the fourth conductive ring) of the second light source member 32 through the cavity 1 respectively for
  • the second light source member 32 transmits an electrical signal to illuminate it.
  • the power-on connection short assembly 81 and the power-on connection long assembly 91 are electrically connected to the positive and negative common electrodes (the first conductive ring and the second conductive ring) of the first light source member 31 through the cavity 1 respectively for the first
  • the light source member 31 transmits an electric signal to illuminate it. Therefore, the first light source member 31 and the second light source member 32 each need only one electrical connection short assembly and one electrical connection long assembly to realize power supply for all the first line light source 300 and the second line light source, and the power supply structure is simple and costly. low.
  • the first light source member 31 further includes an upper cover assembly 311, and the upper cover assembly 311 is disposed at an end of the first line source 300 surrounding the second light source member 32;
  • the upper cover assembly 311 includes two upper conductive half rings, an upper ceramic inner ring, and an upper ceramic outer ring.
  • the two upper conductive half rings are electrically connected to the positive or negative common electrodes of the first light source member 31 and the second light source member 32, respectively, and the two upper conductive half rings are electrically connected to realize the first light source member 31 and the second light source member 32.
  • two upper conductive half rings are used as one of the common electrodes of the first light source member 31 and the second light source member 32.
  • the upper ceramic inner ring and the upper ceramic outer ring are used to wrap the two upper conductive half rings to insulate them from the outside. Wherein, since the upper ceramic outer ring and the upper conductive half ring need to be disassembled before replacing the first line light source 300 in the first light source member 31, the separate arrangement of the two upper conductive half rings is beneficial to the first line source. 300 removal and installation.
  • the upper ceramic outer ring is disposed separately, that is, the upper ceramic outer ring is divided into a plurality of portions, which not only facilitates self-disassembly, but also facilitates the first line light source 300 and the upper cover assembly 311. Assembly and disassembly.
  • the second light source member 32 further includes a lower cover assembly 321 disposed at an end of the second line light source distributed away from the first light source member 31;
  • the lower cover assembly 321 includes two lower conductive portions Ring, lower ceramic inner ring 301 and lower ceramic outer ring 302.
  • the two lower conductive half rings are electrically connected to the negative or positive common electrodes of the first light source member 31 and the second light source member 32, respectively, and the two lower conductive half rings are electrically connected to realize the first light source member 31 and the second light source member 32.
  • two lower conductive half rings are used as the other common electrode of the first light source member 31 and the second light source member 32.
  • the lower ceramic inner ring 301 and the lower ceramic outer ring 302 are used to wrap the two lower conductive half rings to insulate them from the outside. Wherein, when the second wire source in the second light source member 32 is replaced, the lower ceramic inner ring 301 and the lower conductive half ring need to be disassembled first, so that the separation of the two lower conductive half rings facilitates the disassembly of the second line source. And installation.
  • the lower ceramic inner ring 301 is provided separately, that is, the lower ceramic inner ring 301 is divided into a plurality of portions, which not only facilitates its own disassembly, but also facilitates assembly and disassembly between the second line source and the lower cover assembly 321.
  • the power-on connection short assembly 81 and the power-on connection long assembly 91 are respectively connected to the upper conductive half ring and the lower conductive half ring connected to the first light source member 31; thereby forming a current flowing through the first line light source to form a loop, thereby completing the Power supply from a line of light sources.
  • the lower electrical connection short assembly 82 and the lower electrical connection long assembly 92 are respectively connected to the lower conductive half ring and the upper conductive half ring connected to the second light source member 32; thereby forming a current flowing through the second line light source to form a loop, thereby completing the second line Power supply to the light source.
  • the degassing chamber provided in Embodiment 1 is provided with a first light source member and a second light source member respectively by dividing into a first cavity and a second cavity by a film opening,
  • the substrate in the cassette can be heated by the light source whether in the upper area of the transfer opening or in the lower area of the transfer opening, thereby ensuring the process temperature of the substrate during the degassing process and the pick-and-place process.
  • Equilibrium in turn, not only improves the quality of the degassing process of the substrate, but also provides a cleaner substrate for subsequent processes.
  • the embodiment provides a semiconductor processing apparatus including the degassing chamber in Embodiment 1.

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Abstract

一种去气腔室和半导体处理装置，包括：腔体（1）和片盒（2），腔体（1）的侧壁上开设有传片口（11）；片盒（2）在腔体（1）内可沿竖直方向移动，还包括设置在腔体（1）内的加热组件（3），加热组件（3）包括第一光源件（31）和第二光源件（32），腔体（1）以传片口（11）为界分为第一腔体（12）和第二腔体（13）；第一光源件（31）位于第一腔体（12）内，第二光源件（32）位于第二腔体（13）内；第一光源件（31）和第二光源件（32）用于对片盒（2）内的基片进行加热。该去气腔室使片盒内的基片无论是在传片口的上方区域还是在传片口的下方区域均可以得到光源的加热，从而确保了基片在去气工艺和取放片过程中的工艺温度均衡。

Description

去气腔室和半导体处理装置 技术领域
本发明涉及半导体器件制备技术领域，具体地，涉及一种去气腔室和半导体处理装置。
背景技术
物理气相沉积(Physical Vapor Deposition，PVD)技术广泛地应用在半导体制造技术领域。在PVD工艺中，通常需要Degas(去气)工艺步骤，用以去除掉基片在大气中吸附的水蒸气等杂质，清洁基片的表面，为后续工序提供尽可能干净的基片。例如图1所示的铜互连PVD工艺流程中即包含该去气工艺步骤。
通常，去气工艺步骤由去气加热系统完成。例如图2就示出了一种传统的去气加热系统，其主要包括真空腔室4、片盒2、升降系统5和光源6。真空腔室4提供了工艺环境，并且在其侧壁上开设有传片口11，用于将基片传出或者传入真空腔室4；片盒2用于承载多个基片；升降系统5用于驱动片盒2升降以将片盒2中的放置于不同高度位置的基片传输到传片口11所对应的高度位置，以便取放片；光源6用于提供热量。
上述去气加热系统的工作流程如下：1)自传片口11接收一批次的多个基片，并通过升降系统5的升降将所述多个基片放置于片盒2中的不同高度位置；2)片盒2在升降系统5的带动下运动至靠近光源6的去气工艺位置上；3)开启光源6，加热基片以进行去气操作；4)关闭光源6，升降系统5带动片盒2运动至传片口11所对应的高度位置，由机械手取走一些基片；5)向片盒2中补充基片；6)重复步骤1)至步骤5)，直至待去气的基片均完成去气工艺。
在实际去气工艺时，由于传片口11位于光源6的下方位置，因此每次取放片时，都需要将片盒2从光源6所对应的位置向下移动至传片口11所对应的位置，这样，片盒2就会偏离光源6所对应的位置，导致片盒2连同其内的基片的温度下降，且基片的温度下降程度并不可控，并且，由于片盒2中的基片并非在片盒2的同一次下降时全部取出，因此，每一个基片从片盒2取出时的温度并非为可控的理想温度且温度也不一致，这将影响后续工艺结果的一致性和稳定性。
发明内容
本发明针对现有技术中存在的上述技术问题，提供一种去气腔室和半导体处理装置。该去气腔室使片盒内的基片无论是在传片口的上方区域，还是在传片口的下方区域，均可以得到光源的加热，从而确保了基片在去气工艺和取放片过程中的工艺温度均衡。
本发明提供一种去气腔室，包括腔体和片盒，所述腔体的侧壁上开设有传片口，所述传片口用于使所述基片传入或传出所述腔体；所述片盒在所述腔体内可沿竖直方向移动，还包括设置在所述腔体内的加热组件，所述加热组件包括第一光源件和第二光源件，所述腔体以所述传片口为界分为第一腔体和第二腔体；所述第一光源件位于所述第一腔体内，所述第二光源件位于所述第二腔体内；所述第一光源件和所述第二光源件用于对所述片盒内的所述基片进行均衡加热。
优选地，所述加热组件还包括第一反光筒和第二反光筒，所述第一反光筒位于所述第一腔体和所述第一光源件之间；所述第二反光筒位于所述第二腔体和所述第二光源件之间；
所述第一反光筒和所述第二反光筒用于将照射到其上的光线向所述片盒内的所述基片反射。
优选地，所述第一反光筒和所述第二反光筒对接形成一体，且在对应所述传片口的位置设有第一开口，所述第一开口能使所述基片通过。
优选地，所述加热组件还包括第一反光板和第二反光板，所述第一反光板盖合在所述第一反光筒的远离所述传片口的一端，所述第二反光板盖合在所述第二反光筒的远离所述传片口的一端；
所述第一反光板和所述第二反光板用于将照射到其上的光线向所述片盒内的所述基片反射。
优选地，所述第一光源件包括多个第一线光源，所述多个第一线光源相互平行且围成一圈；所述第一线光源的长度方向平行于所述片盒的移动方向；
所述第二光源件包括多个第二线光源，所述多个第二线光源相互平行且围成一圈；所述第二线光源的长度方向平行于所述片盒的移动方向；所述片盒能在所述第一线光源和所述第二线光源围成的空间内移动。
优选地，所述第一反光筒和所述第二反光筒的内壁能使照射到其上的光线发生漫反射和/或镜面反射。
优选地，所述第一反光板面向所述第一反光筒筒内的内壁和所述第二反光板面向所述第二反光筒筒内的内壁能使照射到其上的光线发生漫反射和/或镜面反射。
优选地，所述第一反光筒和所述第二反光筒采用不锈钢材质。
优选地，所述第一反光板和所述第二反光板采用不锈钢材质。
本发明还提供一种半导体处理装置，包括上述去气腔室。
本发明的有益效果：本发明所提供的去气腔室，通过在以传片口为界分为第一腔体和第二腔体中分别设置第一光源件和第二光源件，可以使片盒内的基片无论是在传片口的上方区域，还是在传片口的下方区域，均可以得到光源的加热，从而确保了基片在去气工艺和取放片过程中的工艺温度均衡，进而不仅提高了基片的去气工艺质量，而且为后续工艺过程提供了更加洁净 的基片。
本发明所提供的半导体处理装置，通过采用上述去气腔室，提高了该半导体处理装置的处理工艺质量。
附图说明
图1为现有技术中铜互连PVD工艺流程的示意图；
图2为现有技术中去气加热系统的结构剖视图；
图3为本发明实施例1中去气腔室的结构示意图；
图4为图3中第一光源件的结构示意图；
图5为本发明实施例1中去气腔室的结构分解示意图；
图6为本发明实施例1中第一光源件的结构分解示意图；
图7为本发明实施例1中第二光源件的结构剖视图。
其中的附图标记说明：
1.腔体；11.传片口；12.第一腔体；13.第二腔体；2.片盒；3.加热组件；31.第一光源件；311.上盖组件；32.第二光源件；321.下盖组件；33.第一反光筒；34.第二反光筒；30.第一开口；35.第一反光板；36.第二反光板；300.第一线光源；301.下陶瓷内环；302.下陶瓷外环；4.真空腔室；5.升降系统；6.光源；7.反光筒；81.上电连接短组件；91.上电连接长组件；82.下电连接短组件；92.下电连接长组件。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明所提供的一种去气腔室和半导体处理装置作进一步详细描述。
实施例1：
本实施例提供一种去气腔室，如图3所示，包括腔体1和片盒2，腔体1的侧壁上开设有传片口11，传片口11用作基片传入或传出腔体1的通道；片盒2在腔体1内可沿竖直方向移动。去气腔室还包括设置在腔体1内的加热组件3，加热组件3包括第一光源件31和第二光源件32，腔体1以传片口11为界分为第一腔体12和第二腔体13；第一光源件31位于第一腔体12内，第二光源件32位于第二腔体13内。第一光源件31和第二光源件32用于对片盒2内的基片进行加热。这样，片盒2内的基片无论是在传片口11的上方区域，还是在传片口11的下方区域，均可以得到光源的加热，从而确保了基片在去气工艺和取放片过程中的工艺温度均衡，进而不仅提高了基片的去气工艺质量，而且为后续工艺过程提供了更加洁净的基片。
其中，第一光源件31沿第一腔体12的周向而环绕第一腔体12设置于第一腔体12的侧壁的内侧；第二光源件32沿第二腔体13的周向而环绕第二腔体13设置于第二腔体13的侧壁的内侧；具体地，第一光源件31和第二光源件32在腔体1内沿竖直方向设置，且相对于传片口11对称，片盒2可在第一光源件31和第二光源件32环绕围成的空间内竖直移动，这能使片盒2无论移动到腔体1内的什么位置，片盒2内的基片都能受到第一光源件31或第二光源件32的均衡加热，这样，当有基片需要传入或者传出腔体1时，即便片盒2在第一腔体12和第二腔体13内的位置发生变动，其内的基片也能受到第一光源件31和/或第二光源件32的加热。
由于第一光源件31或第二光源件32环绕形成加热空间，其各自能够在片盒2的周围对其内的基片均匀加热，从而可以提高片盒2内的基片的温度均匀性。当然，在实际应用中，第一光源件或第二光源件还可以采用其他任意结构，只要其能够对片盒内的基片进行加热即可。
本实施例中，如图4所示，第一光源件31包括多个第一线光源300，每一个第一线光源300的长度方向均为片盒2的移动方向，多个第一线光源300 相互平行且沿腔体1的周向排列成一圈。类似地，第二光源件32包括多个第二线光源，每一个第二线光源的长度方向均为片盒2的移动方向，多个第二线光源相互平行且沿腔体1的周向排列成一圈。
而且，如图4所示，多个第一线光源300的上端均连接至第一导电环311，多个第一线光源300的下端均连接至第二导电环312，这样，多个第一线光源300借助第一导电环311和第二导电环312而实现并联。与第一线光源300相类似的，多个第二线光源的上端均连接至第三导电环，多个第二线光源的下端均连接至第四导电环，这样，多个第二线光源借助第三导电环和第四导电环而实现并联。片盒2能在第一线光源300和第二线光源围成的空间内移动。
优选地，为了使第一光源件31和第二光源件32各自能够在360度的范围内发热均匀，使任意相邻两个第一线光源300的间距相等，以及使任意两个第二线光源的间距相等。借助这样设置的第一光源件31和第二光源件32，能使第一线光源300和第二线光源围成的空间内的加热能量和温度保持均匀，从而使片盒2内的基片受热均匀。
本实施例中，加热组件3还包括第一反光筒33和第二反光筒34，第一反光筒33位于第一腔体12和第一光源件31之间；第二反光筒34位于第二腔体13和第二光源件32之间；第一反光筒33和第二反光筒34用于将照射到其上的光线朝向片盒2及其内的基片反射，即，第一反光筒33和第二反光筒34用于将热传递到其上的热量朝向片盒2及其内的基片反射。具体地，第一反光筒33为沿周向闭合的筒状结构，其沿第一光源件31的周向而环绕第一光源件31设置在第一光源件31和第一腔体12之间；第二反光筒34为沿周向闭合的筒状结构，其沿第二光源件32的周向而环绕第二光源件32设置在第二光源件32和第二腔体13之间；如此设置，能使第一光源件31和第二光源件32产生的热量很好地保持在筒内，从而提高第一光源件31和第二光 源件32的热利用率，提升加热效率，同时确保第一反光筒33和第二反光筒34内的加热温度均衡，使片盒2内的基片能够被均匀加热。
优选地，第一反光筒33和第二反光筒34对接形成一体，且在其上与传片口11相对应的位置处设有第一开口30，第一开口30能使基片通过。对接形成一体的第一反光筒33和第二反光筒34能够更好地对筒内的加热能量进行保持，从而更好地提高第一光源件31和第二光源件32的热利用率，提升加热效率，同时确保对接形成一体的第一反光筒33和第二反光筒34内的加热温度均衡。第一开口30与传片口11对应，方便基片出入腔体1。
本实施例中，优选地，通过对第一反光筒33和第二反光筒34的内壁进行抛光和/或表面处理，能使照射到其上的光线发生漫反射和/或镜面反射。漫反射能使筒内第一光源件31和第二光源件32发出的光线照射均匀以及反射均匀，从而使筒内的加热能量更加均匀。镜面反射能使第一光源件31和第二光源件32发出的光线绝大部分都反射回筒内，从而减少了加热能量的损失，确保了筒内热量均衡。
本实施例中，加热组件3还包括第一反光板35和第二反光板36，第一反光板35盖合在第一反光筒33的远离传片口11的一端，第二反光板36盖合在第二反光筒34的远离传片口11的一端；第一反光板35和第二反光板36用于将照射到其上的光线向片盒2及其内的基片反射。第一反光板35和第二反光板36的设置，使第一反光筒33和第二反光筒34对接形成的筒构成了一个密闭的空间，在第一反光板35和第二反光板36的反光作用下，筒内密闭空间中的加热能量能够更好地保持于其内，从而提高第一光源件31和第二光源件32的热利用率，提升加热效率，同时还能减少腔体1的外部环境对筒内密闭环境的干扰，确保筒内形成的密闭空间中的加热环境均衡，进而确保筒内形成的密闭空间内的基片能够被均衡加热。
优选地，通过对第一反光板35和第二反光板36二者彼此相对的壁面 (即，第一反光板35的内壁和第二反光板36的内壁)进行抛光和/或表面处理，能使照射到其上的光线发生漫反射和/或镜面反射。漫反射能使筒内第一光源件31和第二光源件32发出的光线照射均匀以及反射均匀，从而使筒内的加热能量更加均匀。镜面反射能使第一光源件31和第二光源件32发出的光线绝大部分都反射回筒内，从而减少了加热能量的损失，确保了筒内热量的利用率和均衡性。
本实施例中，优选地，第一反光筒33、第二反光筒34、第一反光板35和第二反光板36可采用不锈钢材质。不锈钢材质能够对热量进行很好的传导，从而使筒内热量更加均匀。当然，第一反光筒33和第二反光筒34以及第一反光板35和第二反光板36也可以采用其他的材质，如陶瓷等。
本实施例中，如图4所示，第一光源件31包括多个第一线光源300，每一个第一线光源300的长度方向均为片盒2的移动方向，多个第一线光源300相互平行且沿腔体1的周向排列成一圈。类似地，第二光源件32包括多个第二线光源，每一个第二线光源的长度方向均为片盒2的移动方向，多个第二线光源相互平行且沿腔体1的周向排列成一圈。
在本实施例中，如图4所示，多个第一线光源300的上端均连接至第一导电环331，多个第一线光源300的下端均连接至第二导电环332，这样，多个第一线光源300借助第一导电环331和第二导电环332而实现并联，即，第一导电环331和第二导电环332用作每个第一线光源300的正、负公共电极。第二线光源的电连接方式与第一线光源300相类似，多个第二线光源的上端均连接至第三导电环，多个第二线光源的下端均连接至第四导电环，这样，多个第二线光源借助第三导电环和第四导电环而实现并联，即，第三导电环和第四导电环用作每个第二线光源的正、负公共电极。
片盒2能在第一线光源300和第二线光源围成的空间内移动。优选地，为了使第一光源件31和第二光源件32各自能够在360度的范围内发热均匀， 使任意相邻两个第一线光源300的间距相等，以及使任意两个第二线光源的间距相等。借助这样设置的第一光源件31和第二光源件32，能使第一线光源300和第二线光源围成的空间内的加热能量和温度保持均匀，从而使片盒2内的基片受热均匀。
本实施例中，如图5和图6所示，该去气腔室包括腔体1、片盒2、升降系统5、反光筒7、第一光源件31和第二光源件32、上电连接短组件81、上电连接长组件91、下电连接短组件82和下电连接长组件92。其中，下电连接短组件82和下电连接长组件92穿过腔体1分别与第二光源件32的正、负公共电极(第三导电环和第四导电环)电连接，用于为第二光源件32传输电信号，以使其点亮。上电连接短组件81和上电连接长组件91穿过腔体1分别与第一光源件31的正、负公共电极(第一导电环和第二导电环)电连接，用于为第一光源件31传输电信号，以使其点亮。如此设置，第一光源件31和第二光源件32各自均只需一个电连接短组件和一个电连接长组件即可实现为全部第一线光源300和第二线光源供电，供电结构简单，成本低。
本实施例中，如图6所示，第一光源件31还包括上盖组件311，上盖组件311设置在环绕分布的第一线光源300的远离第二光源件32的一端；上盖组件311包括两个上导电半环、上陶瓷内环和上陶瓷外环。两个上导电半环分别与第一光源件31和第二光源件32的正或负公共电极电连接，且两个上导电半环电连接而实现第一光源件31和第二光源件32并联，即，两个上导电半环用作第一光源件31和第二光源件32的其中一个公共电极。上陶瓷内环和上陶瓷外环用于将两个上导电半环进行包裹，使其与外界相互绝缘。其中，由于在更换第一光源件31中的第一线光源300时，需要先将上陶瓷外环和上导电半环进行拆卸，所以两个上导电半环的分开设置有利于第一线光源300的拆卸和安装。另外，上陶瓷外环分体设置，即上陶瓷外环分为多个部分，不仅有利于自身的拆卸，而且还便于第一线光源300和上盖组件311之 间的装配与拆卸。
如图7所示，第二光源件32还包括下盖组件321，下盖组件321设置在环绕分布的第二线光源的远离第一光源件31的一端；下盖组件321包括两个下导电半环、下陶瓷内环301和下陶瓷外环302。两个下导电半环分别与第一光源件31和第二光源件32的负或正公共电极电连接，且两个下导电半环电连接而实现第一光源件31和第二光源件32并联，即，两个下导电半环用作第一光源件31和第二光源件32的其中另一个公共电极。下陶瓷内环301和下陶瓷外环302用于将两个下导电半环进行包裹，使其与外界相互绝缘。其中，由于在更换第二光源件32中的第二线光源时，需要先将下陶瓷内环301和下导电半环进行拆卸，所以两个下导电半环的分开设置有利于第二线光源的拆卸和安装。另外，下陶瓷内环301分体设置，即下陶瓷内环301分为多个部分，不仅有利于其自身的拆卸，而且还有利于第二线光源和下盖组件321之间的装配与拆卸。
上电连接短组件81和上电连接长组件91分别连接与第一光源件31连接的上导电半环和下导电半环；从而使流过第一线光源的电流形成回路，进而完成对第一线光源的供电。下电连接短组件82和下电连接长组件92分别连接与第二光源件32连接的下导电半环和上导电半环；从而使流过第二线光源的电流形成回路，进而完成对第二线光源的供电。
实施例1的有益效果：实施例1中所提供的去气腔室，通过在以传片口为界分为第一腔体和第二腔体中分别设置第一光源件和第二光源件，可以使片盒内的基片无论是在传片口的上方区域，还是在传片口的下方区域，均可以得到光源的加热，从而确保了基片在去气工艺和取放片过程中的工艺温度均衡，进而不仅提高了基片的去气工艺质量，而且为后续工艺过程提供了更加洁净的基片。
实施例2：
本实施例提供一种半导体处理装置，包括实施例1中的去气腔室。
通过采用实施例1中的去气腔室，提高了该半导体处理装置的处理工艺质量。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (12)

  1. 一种去气腔室，包括腔体和片盒，所述腔体的侧壁上开设有传片口，所述传片口用作所述基片传入或传出所述腔体的通道；所述片盒在所述腔体内可沿竖直方向移动，其特征在于，还包括设置在所述腔体内的加热组件，所述加热组件包括第一光源件和第二光源件，所述腔体以所述传片口为界分为第一腔体和第二腔体；所述第一光源件位于所述第一腔体内，所述第二光源件位于所述第二腔体内；所述第一光源件和所述第二光源件用于对所述片盒内的所述基片进行加热。
  2. 根据权利要求1所述的去气腔室，其特征在于，所述第一光源件沿所述第一腔体的周向而环绕所述第一腔体设置于所述第一腔体的侧壁的内侧；所述第二光源件沿所述第二腔体的周向而环绕所述第二腔体设置于所述第二腔体的侧壁的内侧；
    所述片盒能在所述第一光源件和所述第二光源件围成的空间内移动。
  3. 根据权利要求2所述的去气腔室，其特征在于，所述第一光源件包括多个第一线光源，每个所述第一线光源的长度方向为所述片盒的移动方向；所述多个第一线光源相互平行且沿所述腔体的周向排列成一圈；
    所述第二光源件包括多个第二线光源，每个所述第二线光源的长度方向为所述片盒的移动方向；所述多个第二线光源相互平行且沿所述腔体的周向排列成一圈。
  4. 根据权利要求3所述的去气腔室，其特征在于，任意相邻两个所述第一线光源的间距相等；任意两个所述第二线光源的间距相等。
  5. 根据权利要求1-4任意一项所述的去气腔室，其特征在于，所述加热 组件还包括第一反光筒和第二反光筒，所述第一反光筒位于所述第一腔体和所述第一光源件之间；所述第二反光筒位于所述第二腔体和所述第二光源件之间；
    所述第一反光筒和所述第二反光筒用于将照射到其上的光线向所述片盒内的所述基片反射。
  6. 根据权利要求5所述的去气腔室，其特征在于，所述第一反光筒和所述第二反光筒对接形成一体，且在其上与所述传片口相对应的位置处设有第一开口，所述第一开口能使所述基片通过。
  7. 根据权利要求6所述的去气腔室，其特征在于，所述加热组件还包括第一反光板和第二反光板，所述第一反光板盖合在所述第一反光筒的远离所述传片口的一端，所述第二反光板盖合在所述第二反光筒的远离所述传片口的一端；
    所述第一反光板和所述第二反光板用于将照射到其上的光线向所述片盒反射。
  8. 根据权利要求6所述的去气腔室，其特征在于，所述第一反光筒和所述第二反光筒的内壁能使照射到其上的光线发生漫反射和/或镜面反射。
  9. 根据权利要求7所述的去气腔室，其特征在于，所述第一反光板面向所述第一反光筒筒内的内壁和所述第二反光板面向所述第二反光筒筒内的内壁能使照射到其上的光线发生漫反射和/或镜面反射。
  10. 根据权利要求5所述的去气腔室，其特征在于，所述第一反光筒和所述第二反光筒采用不锈钢材质。
  11. 根据权利要求7所述的去气腔室，其特征在于，所述第一反光板和所述第二反光板采用不锈钢材质。
  12. 一种半导体处理装置，其特征在于，包括权利要求1-11任意一项所述的去气腔室。
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