WO2018055843A1 - Substrate processing device - Google Patents

Substrate processing device Download PDF

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Publication number
WO2018055843A1
WO2018055843A1 PCT/JP2017/021326 JP2017021326W WO2018055843A1 WO 2018055843 A1 WO2018055843 A1 WO 2018055843A1 JP 2017021326 W JP2017021326 W JP 2017021326W WO 2018055843 A1 WO2018055843 A1 WO 2018055843A1
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WO
WIPO (PCT)
Prior art keywords
substrate
liquid
processing apparatus
grooves
inner peripheral
Prior art date
Application number
PCT/JP2017/021326
Other languages
French (fr)
Japanese (ja)
Inventor
達大 鈴木
憲太郎 徳利
高志 西村
嘉暁 結城
康人 玉置
信行 宮路
友美 平下
博章 内田
奥谷　洋介
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to KR1020197007274A priority Critical patent/KR102208287B1/en
Priority to CN201780057738.3A priority patent/CN109791884B/en
Publication of WO2018055843A1 publication Critical patent/WO2018055843A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the present invention relates to a technique for processing a substrate by supplying a processing liquid to the substrate.
  • the processing liquid adhering to the inner peripheral surface of the liquid receiving portion may solidify and become particles.
  • the processing liquid attached to the inner peripheral surface of the liquid receiving part was attached to the inner peripheral surface of the liquid receiving part and a new processing liquid that scatters from the substrate toward the liquid receiving part in the subsequent liquid processing.
  • a phenomenon also referred to as a splash back phenomenon
  • Patent Document 1 discloses a technique of providing a mesh member further inside than the inner peripheral surface of the liquid receiving portion.
  • Patent Document 2 discloses a technique in which a hydrophilic member such as a PVA (polyvinyl alcohol) sponge is provided further inside than the inner peripheral surface of the liquid receiving portion.
  • PVA polyvinyl alcohol
  • the present invention has been made in view of the above problems, and an object thereof is to provide a technique for suppressing contamination of a substrate.
  • a substrate processing apparatus includes a substrate holding unit that horizontally holds a substrate, and a processing liquid supply that supplies a processing liquid toward the substrate held by the substrate holding unit. And a liquid receiving portion that surrounds the periphery of the substrate holding portion and receives the processing liquid scattered from the substrate, and a rotation axis that extends in the vertical direction through the center of the substrate held by the substrate holding portion.
  • a substrate rotating unit that rotates the substrate, and an inner peripheral surface of the liquid receiving unit has a plurality of grooves exposed to the substrate held by the substrate holding unit, and each of the plurality of grooves The extending direction includes a vertical component.
  • a substrate processing apparatus is the substrate processing apparatus according to the first aspect, wherein the extending direction is a direction in which a component in a rotation direction of the substrate and a component in a vertically downward direction are combined. .
  • a substrate processing apparatus is the substrate processing apparatus according to the first or second aspect, wherein the plurality of grooves are formed on a portion downstream of the upstream portion of the substrate in the rotation direction. Includes a groove that is deeply recessed.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to third aspects, wherein the inner peripheral surface includes at least the substrate held by the substrate holding part.
  • the plurality of grooves are included at the same vertical position.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to fourth aspects, wherein the plurality of inner peripheral surfaces are recessed from a reference surface in a circumferential direction. And a plurality of bank portions located between adjacent grooves and along the reference plane, and the first length of each groove along the reference plane is each bank along the reference plane Longer than the second length of the part.
  • a substrate processing apparatus is the substrate processing apparatus according to any one of the first to fifth aspects, wherein the liquid receiving portion has a relatively small diameter and is close to the substrate.
  • a plurality of cups extending from an inner cup surrounding the periphery of the substrate holding portion to an outer cup surrounding the periphery of the substrate holding portion at a relatively large diameter and far from the substrate; and at least the inner cup
  • the inner peripheral surface includes the plurality of grooves.
  • the substrate processing apparatus it is possible to suppress contamination of the substrate due to the processing liquid adhering to the inner peripheral surface of the liquid receiving portion.
  • FIG. 1 is a plan view of a substrate processing apparatus 1.
  • FIG. 1 is a longitudinal sectional view of a substrate processing apparatus 1.
  • 4 is a cross-sectional view showing a horizontal cross section of the liquid collection unit 70.
  • FIG. It is a side view of the liquid collection part 70 seen from the inner side (rotation axis CX side).
  • It is the elements on larger scale of the substrate processing apparatus 1 which shows the mode of a chemical
  • it is a cross-sectional view schematically showing how the treatment liquid droplets 101 and 102 move.
  • FIG. 3 is a cross-sectional view schematically showing how treatment liquid droplets 101 to 103 move. It is a test result of the splash back phenomenon in a comparative example. It is a test result of the splash back phenomenon in this embodiment. It is sectional drawing which shows 1 A of substrate processing apparatuses which concern on 2nd Embodiment. It is a test result of the splash back phenomenon in a 2nd embodiment.
  • FIG. 10 is a cross-sectional view schematically showing how treatment liquid droplets 101 to 103 move in a modification. In a modification, it is a side view of liquid collection part 70C seen from the inner side (rotation axis CX side).
  • FIG. 1 is a plan view of a substrate processing apparatus 1 according to the first embodiment.
  • FIG. 2 is a longitudinal sectional view of the substrate processing apparatus 1.
  • the substrate processing apparatus 1 is a single wafer processing apparatus that processes substrates W for semiconductor use one by one.
  • a circular silicon substrate W is subjected to chemical treatment and rinse treatment using a rinse liquid such as pure water. Then dry it. More specifically, the substrate W is supplied with a chemical solution such as an SC1 solution, a DHF solution, or an SC2 solution to clean the substrate W (chemical solution treatment), and then a rinse treatment is performed using the rinse solution.
  • a chemical solution such as an SC1 solution, a DHF solution, or an SC2 solution
  • FIG. 1 shows a state where the substrate W is not held on the spin chuck 20
  • FIG. 2 shows a state where the substrate W is held on the spin chuck 20.
  • the substrate processing apparatus 1 includes a spin chuck 20 that holds the substrate W as a main element in a horizontal posture (a posture in which the normal line is along the vertical direction) in the chamber 10, and an upper surface of the substrate W held by the spin chuck 20.
  • An upper surface processing liquid nozzle 30 for supplying a liquid and a liquid receiving portion 40 that surrounds the spin chuck 20 and receives the processing liquid scattered from the substrate W are provided.
  • a partition plate 15 is provided around the liquid receiving portion 40 in the chamber 10 to partition the inner space of the chamber 10 up and down.
  • the treatment liquid is a generic name including all of the chemical liquid, the rinse liquid, and the cleaning liquid.
  • the chamber 10 includes a side wall 11 along the vertical direction, a ceiling wall 12 that closes the upper side of the space surrounded by the side wall 11, and a floor wall 13 that closes the lower side.
  • a space surrounded by the side wall 11, the ceiling wall 12, and the floor wall 13 is a processing space for the substrate W.
  • a part of the side wall 11 of the chamber 10 is provided with a carry-in / out opening for carrying the substrate W in / out of the chamber 10 and a shutter for opening / closing the carry-in / out opening (both not shown).
  • a fan filter unit (FFU) 14 for further purifying the air in the clean room in which the substrate processing apparatus 1 is installed and supplying it to the processing space in the chamber 10 is attached to the ceiling wall 12 of the chamber 10.
  • the fan filter unit 14 includes a fan and a filter (for example, a HEPA filter) for taking in air in the clean room and sending it out into the chamber 10, and forms a downflow of clean air in the processing space in the chamber 10.
  • a punching plate having a large number of blowing holes may be provided directly below the ceiling wall 12.
  • the spin chuck 20 includes a disc-shaped spin base 21 fixed in a horizontal posture at the upper end of a rotating shaft 24 extending in the vertical direction.
  • a spin motor 22 that rotates the rotating shaft 24 is provided below the spin base 21.
  • the spin motor 22 rotates the spin base 21 in the horizontal plane via the rotation shaft 24.
  • a cylindrical cover member 23 is provided so as to surround the periphery of the spin motor 22 and the rotating shaft 24.
  • the outer diameter of the disk-shaped spin base 21 is slightly larger than the diameter of the circular substrate W held by the spin chuck 20. Therefore, the spin base 21 has a flat circular base surface 21a facing the entire lower surface of the substrate W to be held.
  • a plurality (four in this embodiment) of chuck pins 26 are provided upright at the peripheral edge of the base surface 21a of the spin base 21.
  • the plurality of chuck pins 26 are evenly spaced along the circumference corresponding to the outer circumference of the circular substrate W (if there are four chuck pins 26 as in this embodiment, the chuck pins 26 are spaced at 90 ° intervals. ) Is arranged.
  • the plurality of chuck pins 26 are driven in conjunction with a link mechanism (not shown) housed in the spin base 21.
  • the spin chuck 20 holds the substrate W by bringing each of the plurality of chuck pins 26 into contact with the outer peripheral end of the substrate W, thereby separating the substrate W from the base surface 21 a above the spin base 21.
  • the gripping can be released by separating each of the plurality of chuck pins 26 from the outer peripheral end of the substrate W (see FIG. 2).
  • the lower end of the cover member 23 covering the spin motor 22 is fixed to the floor wall 13 of the chamber 10 and the upper end reaches just below the spin base 21.
  • a hook-like member 25 is provided that protrudes almost horizontally outward from the cover member 23 and further bends and extends downward.
  • the spin motor 22 rotates the rotary shaft 24 in a state where the spin chuck 20 holds the substrate W by gripping by the plurality of chuck pins 26, thereby rotating around the rotation axis CX along the vertical direction passing through the center of the substrate W.
  • the substrate W can be rotated.
  • the driving of the spin motor 22 is controlled by the control unit 9.
  • the spin chuck 20 functions as a substrate holding unit that holds the substrate W horizontally.
  • the spin motor 22 functions as a substrate rotating unit that rotates the substrate W held by the spin chuck 20 around the rotation axis CX.
  • the top treatment liquid nozzle 30 is configured by attaching a discharge head 31 to the tip of a nozzle arm 32.
  • the proximal end side of the nozzle arm 32 is fixedly connected to the nozzle base 33.
  • the nozzle base 33 can be rotated around an axis along the vertical direction by a motor (not shown).
  • the ejection head 31 of the upper processing liquid nozzle 30 is circular in the horizontal direction between the processing position above the spin chuck 20 and the standby position outside the liquid receiving portion 40. Move in an arc.
  • the upper surface treatment liquid nozzle 30 is configured to be supplied with a plurality of kinds of treatment liquids (including at least pure water).
  • the processing liquid discharged from the discharge head 31 of the upper surface processing liquid nozzle 30 at the processing position is deposited on the upper surface of the substrate W held by the spin chuck 20. Further, the upper surface treatment liquid nozzle 30 can be swung above the base surface 21 a of the spin base 21 by the rotation of the nozzle base 33.
  • a lower surface treatment liquid nozzle 28 is provided along the vertical direction so as to pass through the inside of the rotating shaft 24.
  • the upper end opening of the lower surface treatment liquid nozzle 28 is formed at a position facing the lower surface center of the substrate W held by the spin chuck 20.
  • a plurality of types of processing liquids are also supplied to the lower surface processing liquid nozzle 28. The processing liquid discharged from the lower surface processing liquid nozzle 28 is deposited on the lower surface of the substrate W held by the spin chuck 20.
  • the substrate processing apparatus 1 is provided with a two-fluid nozzle 60 in addition to the upper surface processing liquid nozzle 30.
  • the two-fluid nozzle 60 is a nozzle that generates a droplet by mixing a treatment liquid such as pure water and a pressurized gas, and jets a mixed fluid (two-fluid) of the droplet and the gas onto the substrate W.
  • the two-fluid nozzle 60 is configured by attaching a liquid head (not shown) to the tip of a nozzle arm 62 and attaching a gas head 64 to a support member provided so as to branch from the nozzle arm 62.
  • the base end side of the nozzle arm 62 is fixedly connected to the nozzle base 63.
  • the nozzle base 63 can be rotated around an axis along the vertical direction by a motor (not shown). As the nozzle base 63 rotates, the two-fluid nozzle 60 moves in an arc along the horizontal direction between the processing position above the spin chuck 20 and the standby position outside the liquid receiving portion 40.
  • a treatment liquid such as pure water is supplied to the liquid head, and a pressurized inert gas (nitrogen gas (N 2 in this embodiment)) is supplied to the gas head 64.
  • the mixed fluid of the processing liquid ejected from the two-fluid nozzle 60 at the processing position is sprayed onto the upper surface of the substrate W held by the spin chuck 20.
  • the lower surface processing liquid nozzle 28, the upper surface processing liquid nozzle 30, and the two-fluid nozzle 60 function as a processing liquid supply unit that supplies the processing liquid toward the substrate W held by the spin chuck 20.
  • the liquid receiving part 40 includes a collecting part 41 and cups 42 and 43 that can be moved up and down independently of each other.
  • the collection unit 41 surrounds the spin chuck 20 and has a shape that is substantially rotationally symmetric with respect to the rotation axis CX that passes through the center of the substrate W held by the spin chuck 20.
  • the recovery portion 41 includes an annular bottom 44 in plan view, a cylindrical inner wall 45 rising upward from the inner periphery of the bottom 44, a cylindrical outer wall 46 rising upward from the outer periphery of the bottom 44, and an inner wall A cylindrical middle wall portion 48 that rises upward from between the portion 45 and the outer wall portion 46 is integrally provided.
  • the inner wall portion 45 is formed in such a length that it can be accommodated with an appropriate gap between the cover member 23 and the bowl-like member 25 in a state where the recovery portion 41 is raised most.
  • the middle wall portion 48 is long enough to be accommodated with a suitable gap between a guide portion 52 (to be described later) of the cup 42 and the treatment liquid separation wall 53 in a state where the recovery portion 41 and the cup 42 are closest to each other. Is formed.
  • a disposal groove 49 is provided between the inner wall portion 45 and the middle wall portion 48 for collecting and discarding used processing liquid. Further, an annular outer collection groove 51 for collecting and collecting used processing liquid is formed between the middle wall portion 48 and the outer wall portion 46.
  • the waste groove 49 is connected to an exhaust liquid mechanism (not shown) for discharging the processing liquid collected in the waste groove 49 and forcibly exhausting the waste groove 49.
  • an exhaust liquid mechanism (not shown) for discharging the processing liquid collected in the waste groove 49 and forcibly exhausting the waste groove 49.
  • four exhaust fluid mechanisms are provided at equal intervals along the circumferential direction of the discard groove 49.
  • the outer recovery groove 51 is connected to a recovery mechanism (not shown) for recovering the processing liquid collected in the outer recovery groove 51 to a recovery tank provided outside the substrate processing apparatus 1.
  • the bottom of the outer collection groove 51 is inclined by a slight angle with respect to the horizontal direction, and the collection mechanism is connected to the lowest position. Thereby, the processing liquid that has flowed into the outer recovery groove 51 is recovered smoothly.
  • the cup 42 surrounds the periphery of the spin chuck 20 and has a shape that is substantially rotationally symmetric with respect to the rotation axis CX passing through the center of the substrate W held by the spin chuck 20.
  • the cup 42 is integrally provided with a guide portion 52 and a cylindrical processing liquid separation wall 53 connected to the guide portion 52.
  • the guide portion 52 has a lower end portion 52a that is coaxial with the lower end portion of the middle wall portion 48 on the inner side of the middle wall portion 48 of the collecting portion 41, and a center side while drawing a smooth arc from the upper end of the lower end portion 52a ( It has an upper end 52b that extends obliquely upward (in a direction approaching the rotation axis CX of the substrate W) and a folded portion 52c that is formed by folding the tip of the upper end 52b downward.
  • the lower end portion 52a is accommodated in the disposal groove 49 with an appropriate gap between the inner wall portion 45 and the middle wall portion 48 in a state where the collecting portion 41 and the cup 42 are closest to each other.
  • the upper end portion 52b of the guide portion 52 is formed so as to increase in thickness toward the lower side, and the processing liquid separation wall 53 is provided in a cylindrical shape so as to extend downward from the lower peripheral edge of the upper end portion 52b. have.
  • the processing liquid separation wall 53 is accommodated in the outer recovery groove 51 with an appropriate gap between the middle wall portion 48 and the cup 43 in a state where the recovery portion 41 and the cup 42 are closest to each other.
  • the cup 43 has a shape that is substantially rotationally symmetric with respect to a rotation axis CX that surrounds the spin chuck 20 and passes through the center of the substrate W held by the spin chuck 20 outside the guide portion 52 of the cup 42. ing.
  • the cup 43 has a function as a guide part.
  • the cup 43 has a lower end portion 43a that is coaxially cylindrical with the lower end portion 52a of the guide portion 52, and is inclined obliquely upward from the upper end of the lower end portion 43a while drawing a smooth arc (in the direction approaching the rotation axis CX of the substrate W). It has an upper end portion 43b that extends and a folded portion 43c that is formed by folding the tip end portion of the upper end portion 43b downward.
  • the lower end 43 a is located in the outer collection groove 51 with an appropriate gap between the processing liquid separation wall 53 of the cup 42 and the outer wall 46 of the collection unit 41 in a state where the collection unit 41 and the cup 43 are closest to each other. Is housed.
  • the upper end portion 43b is provided so as to overlap the guide portion 52 of the cup 42 in the vertical direction, and a very small distance from the upper end portion 52b of the guide portion 52 in a state where the cup 42 and the cup 43 are closest to each other. Keep close.
  • the folded portion 43c formed by folding the tip end portion of the upper end portion 43b downward overlaps the folded portion 43c in the horizontal direction with the folded portion 52c of the guide portion 52 in a state where the cup 42 and the cup 43 are closest to each other. It is formed as follows.
  • the collection unit 41 and the cups 42 and 43 can be moved up and down independently of each other.
  • each of the collection unit 41 and the cups 42 and 43 is provided with an elevating mechanism (not shown), and is thereby raised and lowered separately.
  • an elevating mechanism various known mechanisms such as a ball screw mechanism and an air cylinder can be employed.
  • the liquid receiving part 40 has a cylindrical liquid collecting part 70 attached to the inside of the lower end part 52a of the cup 42.
  • FIG. 3 is a cross-sectional view showing a horizontal cross section of the liquid collection unit 70.
  • FIG. 4 is a side view of the liquid collection unit 70 as viewed from the inside (rotation axis CX side).
  • the inner peripheral surface 75 of the liquid collecting part 70 has a plurality of grooves 71 exposed on the substrate W side held by the spin chuck 20.
  • the extending direction of each groove 71 is along the vertical direction.
  • the inner peripheral surface 75 alternately has a plurality of grooves 71 recessed from the reference surface 76 and a plurality of bank portions 72 positioned between the adjacent grooves 71 and along the reference surface 76 in the circumferential direction.
  • each groove 71 is a semicircular recess in plan view. Further, the shape and size of each bank portion 72 are also the same.
  • the first length d1 (for example, 8 mm) of each groove 71 along the reference surface 76 is longer than the second length d2 (for example, 1 mm) of each bank portion 72 along the reference surface 76.
  • the liquid collection unit 70 desirably has chemical resistance and the like from the viewpoint of receiving the treatment liquid, and is made of, for example, a Teflon (registered trademark) material. More specifically, for example, the liquid collection unit 70 is made of PTFE (polytetrafluoroethylene).
  • the liquid collection unit 70 joins the droplets of the processing liquid scattered from the substrate W and adhering to the inner peripheral surface 75 in each groove 71, and the liquid droplets after joining are along the extending direction of the groove 71 by its own weight. And drop it down.
  • the dropped liquid droplets are discharged from the substrate processing apparatus 1 by the exhaust liquid mechanism (not shown) through the discard groove 49.
  • the partition plate 15 is provided so as to partition the inner space of the chamber 10 up and down around the liquid receiving portion 40.
  • the partition plate 15 may be a single plate-like member surrounding the liquid receiving portion 40, or may be a combination of a plurality of plate-like members. Further, the partition plate 15 may be formed with through holes or notches penetrating in the thickness direction.
  • the partition plate 15 supports the nozzle bases 33 and 63 of the upper treatment liquid nozzle 30 and the two-fluid nozzle 60. A through hole is formed through which a support shaft is inserted.
  • the outer peripheral end of the partition plate 15 is connected to the side wall 11 of the chamber 10. Further, the edge portion surrounding the liquid receiving portion 40 of the partition plate 15 is formed to have a circular shape having a diameter larger than the outer diameter of the cup 43. Therefore, the partition plate 15 does not become an obstacle to the raising and lowering of the cup 43.
  • an exhaust duct 18 is provided in a part of the side wall 11 of the chamber 10 and in the vicinity of the floor wall 13.
  • the exhaust duct 18 is connected in communication with an exhaust mechanism (not shown).
  • the air that has passed between the liquid receiver 40 and the partition plate 15 is discharged from the exhaust duct 18 to the outside of the apparatus.
  • the hardware configuration of the control unit 9 provided in the substrate processing apparatus 1 is the same as that of a general computer. That is, the control unit 9 stores a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, control software, data, and the like. It is configured with a magnetic disk to be placed.
  • the CPU of the control unit 9 executes a predetermined processing program, each operation mechanism of the substrate processing apparatus 1 is controlled by the control unit 9, and processing in the substrate processing apparatus 1 proceeds.
  • Example of processing> An example of the processing procedure for the substrate W will be outlined.
  • the surface of the rotating substrate W is subjected to chemical treatment, pure water rinsing treatment, and IPA (isopropyl alcohol) treatment in this order, and then the substrate W is rotated at a higher speed to perform a shake-off drying treatment. The case where it performs is demonstrated.
  • the substrate W is held on the spin chuck 20 and the liquid receiving unit 40 moves up and down.
  • FIG. 5 is a partially enlarged view of the substrate processing apparatus 1 showing the state of the chemical treatment and the pure water rinsing treatment.
  • FIG. 6 is a partially enlarged view of the substrate processing apparatus 1 showing a state of the IPA processing. 5 and 6, the processing liquid that flows on the upper surface of the substrate W is represented by a solid arrow, and the processing liquid that scatters laterally from the edge of the substrate W is represented by two dashed arrows.
  • FIGS. 5 and 6 an example of processing will be described with reference to FIGS. 5 and 6.
  • a pure water rinsing process is performed on the substrate W. Also in this case, for example, all of the recovery part 41 and the cups 42 and 43 are raised, and the state where the periphery of the substrate W held by the spin chuck 20 is surrounded by the guide part 52 of the cup 42 is maintained (FIG. 5). In this state, the substrate W is rotated together with the spin chuck 20, and pure water is supplied from the ejection head 31 to the upper surface of the substrate W. The supplied pure water flows along the upper surface of the substrate W by the centrifugal force generated by the rotation of the substrate W, and is eventually scattered from the edge of the substrate W to the side. Thereby, the pure water rinse process of the board
  • IPA processing is performed on the substrate W.
  • the collection unit 41 and the cup 42 are lowered, and only the cup 43 is raised.
  • an opening surrounding the periphery of the substrate W held by the spin chuck 20 is formed between the upper end portion 43b of the cup 43 and the upper end portion 52b of the guide portion 52 of the cup 42 (FIG. 6).
  • the substrate W is rotated together with the spin chuck 20, and IPA is supplied from the ejection head 31 to the upper surface of the substrate W.
  • the supplied IPA flows along the upper surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W, and is eventually scattered from the edge of the substrate W to the side.
  • the IPA splashed from the edge of the rotating substrate W is received by the upper end 52b of the cup 42 and the upper end 43b of the cup 43, flows down along the outer surface of the cup 42 and the inner surface of the cup 43, and enters the outer collection groove 51. To be recovered.
  • FIG. 7 is a diagram showing a state of chemical treatment in the comparative example.
  • the processing liquid that flows on the upper surface of the substrate W is represented by solid arrows, and the processing liquid that scatters laterally from the edge of the substrate W is represented by two dashed arrows.
  • FIG. 8 is a cross-sectional view schematically showing how the treatment liquid droplets 101 and 102 move in the comparative example.
  • FIG. 9 is a cross-sectional view schematically showing how the treatment liquid droplets 101 to 103 move in the present embodiment. 8 and 9, the moving direction of each droplet is expressed by a solid line arrow.
  • the processing liquid adhering to the inner peripheral surface of the liquid receiving portion 40 may solidify into particles or a splash back phenomenon may occur. Since the generation of particles and the splashback phenomenon cause contamination of the substrate, it is desirable to suppress such contamination.
  • the liquid receiving part 40Y according to the comparative example does not have the liquid collecting part 70 inside the guide part 52. For this reason, when liquid processing is performed on the substrate W in the comparative example, the droplet 101 of the processing liquid splashed from the edge of the rotating substrate W first adheres to the inner wall of the guide portion 52. A part of the adhering droplets 102 remains attached to the inner wall of the guide portion 52, and the remaining droplets 102 flow down along the inner wall of the guide portion 52 and are discharged from the discard groove 49.
  • the liquid receiving part 40 according to the present embodiment has the liquid collecting part 70 inside the guide part 52, a plurality of grooves 71 are formed on the inner peripheral surface of the liquid receiving part 40. .
  • the droplet 101 of the processing liquid scattered from the edge of the rotating substrate W first adheres to the inner peripheral surface 75 of the liquid collecting portion 70.
  • Most of the adhered droplets 102 flow along a semicircular aspect in each groove 71 and merge with other adhered droplets 102.
  • the combined droplet 103 falls downward along the extending direction of the groove 71 (vertical direction in the present embodiment) due to its relatively large weight as compared with the droplet 102.
  • the state in which the droplets 102 adhere to the inner peripheral surface of the liquid receiving unit 40 is suppressed by promoting the merging of the droplets 102 attached to the inner peripheral surface of the liquid receiving unit 40. Can do. As a result, it is possible to reduce the risk of contamination caused by leaving the state where the droplets 102 are attached to the inner peripheral surface (as a result, the generation of particles and the splashback phenomenon).
  • Patent Document 1 and Patent Document 2 that supplement and maintain the liquid droplets on the inner peripheral surface of the liquid receiving unit. Compared with the aspect of this, the risk of contamination can be reduced more effectively.
  • FIG. 10 shows the test result of the splash back phenomenon in the comparative example.
  • FIG. 11 shows the test result of the splashback phenomenon in the present embodiment.
  • a PH test paper is attached to the upper side of the upper end portion 43b of the cup 43, and the substrate W is subjected to liquid processing while the liquid receiving portions 40Y and 40 shown in FIGS.
  • this liquid process is a liquid process in which DHF is supplied to the upper surface of the substrate W rotating at a rotational speed of 800 rpm from the ejection head 31 located on the rotation axis CX at a flow rate of 500 ml per minute.
  • This liquid treatment is performed five times in total, and the PH test paper is replaced with a new one each time.
  • FIG. 11 shows the number of locations where the PH test paper has changed color due to the droplets of the treatment liquid adhering to the PH test paper.
  • the inner peripheral surface 75 of the liquid collection unit 70 is at least held by the spin chuck 20.
  • a plurality of grooves 71 are included at the same vertical position.
  • the droplets scattered from the substrate W move in a substantially horizontal direction from the substrate W, a plurality of grooves 71 are provided at the same position in the vertical direction as the substrate W, so that the liquid receiver 40 can be more effectively provided.
  • the merging of the droplets 102 attached to the inner peripheral surface can be promoted.
  • the grooves 71 and the bank portions 72 are alternately arranged along the circumferential direction, and the first length d1 (for example, 8 mm) of the grooves 71 along the reference surface 76 is a reference. It is longer than the second length d2 (for example, 1 mm) of each bank portion 72 along the surface 76.
  • the groove 71 having a relatively strong action of joining a plurality of liquid droplets along the semicircular curved surface has a larger inner peripheral surface 75 than the bank portion 72 having a relatively weak action of joining the plurality of liquid drops.
  • Most of the droplets 102 are formed, and the merging of the droplets 102 attached to the inner peripheral surface of the liquid receiving portion 40 can be promoted more effectively.
  • the liquid receiving portion 40 has a relatively large diameter and a position close to the substrate W, the inner cup 42 surrounding the periphery of the spin chuck 20, and a relatively large diameter and a position far from the substrate W. And an outer cup 43 surrounding the periphery of the spin chuck 20.
  • the liquid collection part 70 is provided further inside the inner cup 42, so that the inner peripheral surface of the cup 42 includes a plurality of grooves 71.
  • the processing liquid adheres to the inner peripheral surface of the cup close to the substrate W, the processing liquid adheres to the inner peripheral surface of the cup far from the substrate W.
  • the risk can be reduced more effectively by providing the liquid collection part 70 inside the cup 42 where the risk of substrate contamination is high.
  • FIG. 12 is a cross-sectional view showing a substrate processing apparatus 1A according to the second embodiment.
  • the overall configuration and processing operation of the substrate processing apparatus 1A of the second embodiment are substantially the same as those of the first embodiment.
  • the second embodiment differs from the first embodiment mainly in the configuration of the liquid receiving portion 40A and the liquid collecting portion 70A.
  • the cup 41A further rises from between the inner wall 45 and the middle wall 48, and the upper end draws a smooth circular arc on the center side (the substrate held by the spin chuck 20).
  • the guide portion 47 extends obliquely upward (in the direction approaching the rotation axis CX of W).
  • the guide part 47 has an upper end part 47b extending obliquely upward in the center side (direction approaching the rotation axis CX of the substrate W) while drawing a smooth arc.
  • annular inner collection groove 50 for collecting and collecting used processing liquid is provided between the guide portion 47 and the middle wall portion 48.
  • the configuration of the inner recovery groove 50 is the same as the configuration of the outer recovery groove 51 described above.
  • a recovery mechanism (not shown) for recovering the processing liquid collected in the inner recovery groove 50 to a recovery tank provided outside the substrate processing apparatus 1 is connected to the inner recovery groove 50. Yes.
  • the bottom of the inner collection groove 50 is inclined by a slight angle with respect to the horizontal direction, and the collection mechanism is connected to the lowest position. Thereby, the process liquid which flowed into the inner collection groove 50 is collected smoothly.
  • the upper end portion 52b of the guide portion 52 of the cup 42 is provided so as to overlap the upper end portion 47b of the guide portion 47 of the cup 41 in the vertical direction. For this reason, in a state where the cup 41 and the cup 42 are closest to each other, the upper end portion 52b of the guide portion 52 is close to the upper end portion 47b of the guide portion 47 with a very small interval. Further, the folded portion 52c formed by folding the tip of the upper end portion 52b downward is long enough to overlap the tip of the upper end portion 47b of the guide portion 47 in the horizontal direction with the cup 41 and the cup 42 being closest to each other. It is said.
  • the liquid receiving part 40A has a cylindrical liquid collecting part 70A attached to the inside of the guide part 47 of the cup 41A.
  • the inner peripheral surface 75A of the liquid collecting portion 70A has a plurality of grooves and a plurality of bank portions (which are exposed to the substrate W side held by the spin chuck 20 in the circumferential direction in the same manner as the inner peripheral surface 75 of the above-described embodiment. Are also alternately shown). Further, as in the first embodiment, the first length (for example, 8 mm) of each groove along the reference surface is longer than the second length (for example, 1 mm) of each bank portion along the reference surface.
  • the liquid collection unit 70A causes the droplets of the processing liquid scattered from the substrate W and adhered to the inner peripheral surface 75 to merge in each groove, and the combined droplets are directed downward along the extending direction of the groove due to their own weight. Let fall.
  • the dropped liquid droplet is discharged from the substrate processing apparatus 1A through the waste groove 49 by an exhaust liquid mechanism (not shown).
  • FIG. 13 shows the inspection result of the splash back phenomenon in the second embodiment.
  • a PH test paper is attached to the upper side of the upper end portion 43b of the cup 43, and the substrate W is subjected to the liquid treatment in a state where the cups 41A, 42, and 43 are raised.
  • this liquid process is a liquid process in which DHF is supplied to the upper surface of the substrate W rotating at a rotational speed of 800 rpm from the ejection head 31 located on the rotation axis CX at a flow rate of 500 ml per minute.
  • This liquid treatment is performed five times in total, and the PH test paper is replaced with a new one each time.
  • the “number of discolored locations” column in FIG. 13 indicates the number of locations where the PH test paper has been discolored due to the treatment liquid droplets adhering to the PH test paper.
  • the second embodiment has more discolored locations on the PH test paper.
  • the liquid receiving position of the second embodiment (the guide part 47 and the liquid collecting part 70A of the cup 41A) is more than the liquid receiving position of the first embodiment (the guide part 52 and the liquid collecting part 70 of the cup 42). It is considered that the processing liquid that is close to the substrate W and splashes from the substrate W toward the liquid receiving portion 40A easily collides with the processing liquid splashed back from the liquid receiving portion 40A.
  • the risk of substrate contamination can be reduced by providing the liquid collection part 70A compared to the case where the liquid collection part 70A is not provided.
  • a plurality of grooves are provided at the same position in the vertical direction as the substrate W, thereby more effectively attaching to the inner peripheral surface of the liquid receiving portion 40A.
  • the confluence of each droplet can be promoted.
  • the groove that has a relatively strong action of joining a plurality of droplets is located inside the bank portion that has a relatively weak action of joining a plurality of drops.
  • the liquid collection unit 70A is provided inside the cup 41 that is close to the substrate W and has a high risk of substrate contamination, thereby reducing the risk more effectively. be able to.
  • a groove and a bank part that is, a liquid collecting part
  • the said 1st Embodiment demonstrated the aspect in which the liquid collection part 70 was provided in a part of the inner side of the lower end part 52a of the guide part 52, it is not restricted to this.
  • the liquid collection part 70 is provided on the entire inner side of the lower end part 52a of the guide part 52, or an aspect in which the liquid collection part 70 is provided on the entire inner side of the lower end part 52a and the upper end part 52b of the guide part 52. But you can.
  • each said embodiment demonstrated the aspect which provides the liquid collection parts 70 and 70A in the internal peripheral surface of the innermost cup among the several cups which the liquid receiving parts 40 and 40A have, it is not restricted to this. Absent. If a liquid collection part is provided at least on the inner peripheral surface of the innermost cup among the plurality of cups, the risk of substrate contamination can be reduced more effectively. Moreover, a liquid collection part may be provided only in the inner peripheral surface of cups other than the innermost cup among these several cups.
  • the liquid collection unit 70 is made of PTFE.
  • the liquid collection part 70 may be made of another material (for example, PFA).
  • FIG. 14 is a cross-sectional view schematically showing how the treatment liquid droplets 101 to 103 move in the modification.
  • FIG. 14 illustrates two grooves 71B among the plurality of grooves of the liquid collection unit 70B according to the modification.
  • the rotation direction of the substrate W (not shown) is the counterclockwise direction on the paper surface, and the droplet 101 scattered from the substrate W is moved along the locus of the solid line arrow.
  • the plurality of grooves of the liquid collection part 70B include a groove 71B in which the downstream part is deeper than the upstream part in the rotation direction of the substrate W.
  • the plurality of grooves of the liquid collection part 70 ⁇ / b> B include grooves 71 ⁇ / b> B that are recessed in the direction inclined with respect to the radial direction of the substrate W in the rotation direction of the substrate W.
  • FIG. 15 is a side view of the liquid collection part 70C viewed from the inside (rotation axis CX side) in the modified example.
  • FIG. 16 is a test result of the splash back phenomenon when the first length of each groove 71C is 8 mm and the second length of each bank portion 72C is 1 mm.
  • FIG. 17 shows the inspection result of the splashback phenomenon when the first length of each groove 71C is 4 mm and the second length of each bank portion 72C is 1 mm.
  • FIG. 18 is a test result of the splash back phenomenon when the first length of each groove 71C is 2 mm and the second length of each bank portion 72C is 1 mm.
  • the inner peripheral surface 75C of the liquid collection part 70C has a plurality of grooves 71C that are recessed from the reference surface in the circumferential direction and a plurality of banks that are positioned between the adjacent grooves 71C and that extend along the reference surface. 72C alternately.
  • the extending direction of each groove 71 ⁇ / b> C is a direction (more specifically, a direction inclined at 45 degrees) in which the component of the rotation direction of the substrate W (right to left in FIG. 15) and the vertically downward component are combined. ).
  • the possibility of the splashback phenomenon can be reduced by shortening the first length. This is considered to be caused by the fact that a plurality of liquid droplets easily join in the groove 71C by narrowing the width of the groove 71C.
  • the first length is set wider than the diameter (for example, 1 to 2 mm) of the droplets scattered from the substrate W.
  • FIG. 19 that summarizes the inspection results of FIGS. 16 to 18, if the second length is short, the possibility of the splashback phenomenon occurring can be reduced. This is due to the fact that the width of the bank portion 72C is narrowed, so that the droplets are less likely to adhere to the bank portion 72C (the droplets easily move to the respective grooves 71C adjacent to the bank portion 72C). It is considered a thing.
  • the liquid receiving portion includes a plurality of cups that can be moved up and down independently of each other.
  • a plurality of cups may be integrally configured to move up and down.
  • the liquid receiving part 40 may be provided with only one cup surrounding the spin base 21.
  • the substrate to be processed by the substrate cleaning apparatus 1 is not limited to a substrate for semiconductor use, and may be a glass substrate used for a flat panel display such as a substrate for a solar cell or a liquid crystal display device.
  • the substrate processing apparatus 1 may be any apparatus that supplies the processing liquid to the surface of the substrate held by the spin chuck and receives the processing liquid scattered from the substrate by the cup.
  • a spin coating apparatus spin coater
  • a rotary developing apparatus spin developer

Abstract

The purpose of the present invention is to provide technology for suppressing the soiling of substrates. A substrate processing device comprises a substrate holding unit for holding a substrate horizontally, a processing liquid supply unit for supplying processing liquid toward the substrate held by the substrate holding unit, and a liquid receiving unit that surrounds the substrate holding unit and receives processing liquid which has splashed off of the substrate. The inner peripheral surface of the liquid receiving unit has a plurality of grooves exposed toward the substrate held by the substrate holding unit, and the direction of extension of the plurality of grooves includes vertical-direction components. As a result, droplets of processing liquid readily collect in the grooves and fall due to the weight of the droplets.

Description

基板処理装置Substrate processing equipment
　本発明は、基板に処理液を供給して該基板を処理する技術に関する。 The present invention relates to a technique for processing a substrate by supplying a processing liquid to the substrate.
　従来より、基板を回転させつつ、該基板に処理液を供給する技術が知られている。この種の装置では、基板に供給された処理液が、該基板の回転によって周囲に飛散し、該基板の周囲を取り囲む液受け部の内周面に衝突する。衝突した処理液の大部分は該内周面に沿って落下するが、衝突した処理液の一部は該内周面に付着する場合がある。 Conventionally, a technique for supplying a processing solution to a substrate while rotating the substrate is known. In this type of apparatus, the processing liquid supplied to the substrate is scattered by the rotation of the substrate and collides with the inner peripheral surface of the liquid receiving portion surrounding the periphery of the substrate. Most of the impinging treatment liquid falls along the inner peripheral surface, but a part of the impinging treatment liquid may adhere to the inner peripheral surface.
　液受け部の内周面に付着した処理液を放置すると、該処理液が固化してパーティクルになる虞がある。また、液受け部の内周面に付着した処理液を放置すると、その後の液処理で基板から液受け部に向けて飛散する新たな処理液と液受け部の内周面に付着していた古い処理液とが衝突し、これらの処理液が基板に向けて跳ね返る現象（スプラッシュバック現象、とも呼ぶ）が生じる虞がある。 If the processing liquid adhering to the inner peripheral surface of the liquid receiving portion is left unattended, the processing liquid may solidify and become particles. In addition, if the processing liquid attached to the inner peripheral surface of the liquid receiving part is left unattended, it was attached to the inner peripheral surface of the liquid receiving part and a new processing liquid that scatters from the substrate toward the liquid receiving part in the subsequent liquid processing. There is a possibility that a phenomenon (also referred to as a splash back phenomenon) occurs in which the old processing liquid collides and the processing liquid rebounds toward the substrate.
　パーティクルの発生やスプラッシュバック現象は基板を汚染する原因となる。このため、このような汚染を抑制するために、特許文献１には、液受け部の内周面よりもさらに内側にメッシュ部材を設ける技術が開示されている。また、特許文献２には、液受け部の内周面よりもさらに内側にＰＶＡ(polyvinyl alcohol)スポンジ等の親水性部材を設ける技術が開示されている。 Particle generation and splash back phenomenon cause contamination of the substrate. For this reason, in order to suppress such contamination, Patent Document 1 discloses a technique of providing a mesh member further inside than the inner peripheral surface of the liquid receiving portion. Patent Document 2 discloses a technique in which a hydrophilic member such as a PVA (polyvinyl alcohol) sponge is provided further inside than the inner peripheral surface of the liquid receiving portion.
特開２０１４－２０７３２０号公報JP 2014-207320 A 特開２０１０－１４９００３号公報JP 2010-149003 A
　しかしながら、液受け部の内周面に付着した処理液に起因して基板が汚染されることを抑制する技術については改善の余地があった。 However, there is room for improvement in the technology for suppressing the contamination of the substrate due to the processing liquid adhering to the inner peripheral surface of the liquid receiving portion.
　本発明は、上記課題に鑑みなされたものであり、基板の汚染を抑制する技術を提供することを目的としている。 The present invention has been made in view of the above problems, and an object thereof is to provide a technique for suppressing contamination of a substrate.
　上記課題を解決するため、第１の態様にかかる基板処理装置は、基板を水平に保持する基板保持部と、前記基板保持部に保持された前記基板に向けて処理液を供給する処理液供給部と、前記基板保持部の周囲を取り囲み、前記基板から飛散した前記処理液を受ける液受け部と、前記基板保持部に保持された前記基板の中心を通り鉛直方向に伸びる回転軸を中心として該基板を回転させる基板回転部と、を備え、前記液受け部の内周面は前記基板保持部に保持された前記基板側に露出した複数の溝を有し、前記複数の溝のそれぞれの延在方向は鉛直方向の成分を含む。 In order to solve the above-described problem, a substrate processing apparatus according to a first aspect includes a substrate holding unit that horizontally holds a substrate, and a processing liquid supply that supplies a processing liquid toward the substrate held by the substrate holding unit. And a liquid receiving portion that surrounds the periphery of the substrate holding portion and receives the processing liquid scattered from the substrate, and a rotation axis that extends in the vertical direction through the center of the substrate held by the substrate holding portion. A substrate rotating unit that rotates the substrate, and an inner peripheral surface of the liquid receiving unit has a plurality of grooves exposed to the substrate held by the substrate holding unit, and each of the plurality of grooves The extending direction includes a vertical component.
　第２の態様にかかる基板処理装置は、第１の態様にかかる基板処理装置であって、前記延在方向は、前記基板の回転方向の成分と鉛直下向きの成分とが合成された方向である。 A substrate processing apparatus according to a second aspect is the substrate processing apparatus according to the first aspect, wherein the extending direction is a direction in which a component in a rotation direction of the substrate and a component in a vertically downward direction are combined. .
　第３の態様にかかる基板処理装置は、第１または第２の態様にかかる基板処理装置であって、前記複数の溝が、前記基板の回転方向の上流側の部分よりも下流側の部分の方が深く窪んでいる溝を含む。 A substrate processing apparatus according to a third aspect is the substrate processing apparatus according to the first or second aspect, wherein the plurality of grooves are formed on a portion downstream of the upstream portion of the substrate in the rotation direction. Includes a groove that is deeply recessed.
　第４の態様にかかる基板処理装置は、第１から第３までのいずれか１つの態様にかかる基板処理装置であって、前記内周面は、少なくとも前記基板保持部に保持された前記基板と同じ鉛直方向の位置において、前記複数の溝を含む。 A substrate processing apparatus according to a fourth aspect is the substrate processing apparatus according to any one of the first to third aspects, wherein the inner peripheral surface includes at least the substrate held by the substrate holding part. The plurality of grooves are included at the same vertical position.
　第５の態様にかかる基板処理装置は、第１から第４までのいずれか１つの態様にかかる基板処理装置であって、周方向において、前記内周面は、基準面よりも窪んだ前記複数の溝と、隣り合う溝間に位置し且つ前記基準面に沿う複数の土手部と、を交互に有し、前記基準面に沿う各溝の第１長さは、前記基準面に沿う各土手部の第２長さよりも長い。 A substrate processing apparatus according to a fifth aspect is the substrate processing apparatus according to any one of the first to fourth aspects, wherein the plurality of inner peripheral surfaces are recessed from a reference surface in a circumferential direction. And a plurality of bank portions located between adjacent grooves and along the reference plane, and the first length of each groove along the reference plane is each bank along the reference plane Longer than the second length of the part.
　第６の態様にかかる基板処理装置は、第１から第５までのいずれか１つの態様にかかる基板処理装置であって、前記液受け部は、相対的に径が小さく前記基板に近い位置で前記基板保持部の周囲を取り囲む内側のカップから、相対的に径が大きく前記基板から遠い位置で前記基板保持部の周囲を取り囲む外側のカップにかけての複数のカップを有し、少なくとも前記内側のカップの内周面が前記複数の溝を含む。 A substrate processing apparatus according to a sixth aspect is the substrate processing apparatus according to any one of the first to fifth aspects, wherein the liquid receiving portion has a relatively small diameter and is close to the substrate. A plurality of cups extending from an inner cup surrounding the periphery of the substrate holding portion to an outer cup surrounding the periphery of the substrate holding portion at a relatively large diameter and far from the substrate; and at least the inner cup The inner peripheral surface includes the plurality of grooves.
　第１から第６の態様にかかる基板処理装置では、液受け部の内周面に付着した処理液に起因して基板が汚染されることを抑制できる。 In the substrate processing apparatus according to the first to sixth aspects, it is possible to suppress contamination of the substrate due to the processing liquid adhering to the inner peripheral surface of the liquid receiving portion.
基板処理装置１の平面図である。1 is a plan view of a substrate processing apparatus 1. FIG. 基板処理装置１の縦断面図である。1 is a longitudinal sectional view of a substrate processing apparatus 1. 集液部７０の水平断面を示す断面図である。4 is a cross-sectional view showing a horizontal cross section of the liquid collection unit 70. FIG. 内側（回転軸ＣＸ側）から視た集液部７０の側面図である。It is a side view of the liquid collection part 70 seen from the inner side (rotation axis CX side). 薬液処理および純水リンス処理の様子を示す基板処理装置１の部分拡大図である。It is the elements on larger scale of the substrate processing apparatus 1 which shows the mode of a chemical | medical solution process and a pure water rinse process. ＩＰＡ処理の様子を示す基板処理装置１の部分拡大図である。It is the elements on larger scale of the substrate processing apparatus 1 which shows the mode of an IPA process. 比較例において薬液処理の様子を示す図である。It is a figure which shows the mode of a chemical | medical solution process in a comparative example. 比較例において、処理液の液滴１０１、１０２が移動する様子を模式的に表した横断面図である。In a comparative example, it is a cross-sectional view schematically showing how the treatment liquid droplets 101 and 102 move. 処理液の液滴１０１～１０３が移動する様子を模式的に表した横断面図である。FIG. 3 is a cross-sectional view schematically showing how treatment liquid droplets 101 to 103 move. 比較例におけるスプラッシュバック現象の検査結果である。It is a test result of the splash back phenomenon in a comparative example. 本実施形態におけるスプラッシュバック現象の検査結果である。It is a test result of the splash back phenomenon in this embodiment. 第２実施形態に係る基板処理装置１Ａを示す断面図である。It is sectional drawing which shows 1 A of substrate processing apparatuses which concern on 2nd Embodiment. 第２実施形態におけるスプラッシュバック現象の検査結果である。It is a test result of the splash back phenomenon in a 2nd embodiment. 変形例において、処理液の液滴１０１～１０３が移動する様子を模式的に表した横断面図である。FIG. 10 is a cross-sectional view schematically showing how treatment liquid droplets 101 to 103 move in a modification. 変形例において、内側（回転軸ＣＸ側）から視た集液部７０Ｃの側面図である。In a modification, it is a side view of liquid collection part 70C seen from the inner side (rotation axis CX side). 各溝７１Ｃの第１長さが８ｍｍで各土手部７２Ｃの第２長さが１ｍｍである場合のスプラッシュバック現象の検査結果である。It is a test result of the splash back phenomenon when the first length of each groove 71C is 8 mm and the second length of each bank portion 72C is 1 mm. 各溝７１Ｃの第１長さが４ｍｍで各土手部７２Ｃの第２長さが１ｍｍである場合のスプラッシュバック現象の検査結果である。It is a test result of the splash back phenomenon when the first length of each groove 71C is 4 mm and the second length of each bank portion 72C is 1 mm. 各溝７１Ｃの第１長さが２ｍｍで各土手部７２Ｃの第２長さが１ｍｍである場合のスプラッシュバック現象の検査結果である。It is a test result of the splash back phenomenon when the first length of each groove 71C is 2 mm and the second length of each bank portion 72C is 1 mm. スプラッシュバック現象の複数の検査結果を要約する表である。It is a table | surface which summarizes several test results of a splashback phenomenon.
　以下、図面を参照しつつ本発明の実施の形態について詳細に説明する。なお、図１および以降の各図においては、理解容易のため、必要に応じて各部の寸法や数を誇張または簡略化して描いている。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In FIG. 1 and the subsequent drawings, the size and number of each part are exaggerated or simplified as necessary for easy understanding.
　＜１　第１実施形態＞
　＜１．１　基板処理装置１の構成＞
　図１は、第１実施形態に係る基板処理装置１の平面図である。また、図２は、基板処理装置１の縦断面図である。この基板処理装置１は、半導体用途の基板Ｗを１枚ずつ処理する枚葉式の処理装置であり、円形のシリコンの基板Ｗに薬液処理および純水等のリンス液を用いたリンス処理を行ってから乾燥処理を行う。より具体的には、基板Ｗに、ＳＣ１液、ＤＨＦ液、ＳＣ２液等の薬液を供給して基板Ｗを洗浄処理（薬液処理）した後、リンス液を用いてリンス処理を行い基板Ｗ上から薬液を除去し、最後に基板Ｗの乾燥処理を行う枚葉式の基板洗浄装置である。なお、図１はスピンチャック２０に基板Ｗが保持されていない状態を示し、図２はスピンチャック２０に基板Ｗが保持されている状態を示している。 <1 First Embodiment>
<1.1 Configuration of Substrate Processing Apparatus 1>
FIG. 1 is a plan view of a substrate processing apparatus 1 according to the first embodiment. FIG. 2 is a longitudinal sectional view of the substrate processing apparatus 1. The substrate processing apparatus 1 is a single wafer processing apparatus that processes substrates W for semiconductor use one by one. A circular silicon substrate W is subjected to chemical treatment and rinse treatment using a rinse liquid such as pure water. Then dry it. More specifically, the substrate W is supplied with a chemical solution such as an SC1 solution, a DHF solution, or an SC2 solution to clean the substrate W (chemical solution treatment), and then a rinse treatment is performed using the rinse solution. This is a single wafer type substrate cleaning apparatus that removes the chemical solution and finally performs a drying process on the substrate W. FIG. 1 shows a state where the substrate W is not held on the spin chuck 20, and FIG. 2 shows a state where the substrate W is held on the spin chuck 20.
　基板処理装置１は、チャンバー１０内に、主たる要素として基板Ｗを水平姿勢（法線が鉛直方向に沿う姿勢）に保持するスピンチャック２０と、スピンチャック２０に保持された基板Ｗの上面に処理液を供給するための上面処理液ノズル３０と、スピンチャック２０の周囲を取り囲み基板Ｗから飛散した処理液を受ける液受け部４０と、を備える。また、チャンバー１０内における液受け部４０の周囲には、チャンバー１０の内側空間を上下に仕切る仕切板１５が設けられている。なお、本明細書において、処理液は、薬液、リンス液および洗浄液のすべてを含む総称である。 The substrate processing apparatus 1 includes a spin chuck 20 that holds the substrate W as a main element in a horizontal posture (a posture in which the normal line is along the vertical direction) in the chamber 10, and an upper surface of the substrate W held by the spin chuck 20. An upper surface processing liquid nozzle 30 for supplying a liquid and a liquid receiving portion 40 that surrounds the spin chuck 20 and receives the processing liquid scattered from the substrate W are provided. A partition plate 15 is provided around the liquid receiving portion 40 in the chamber 10 to partition the inner space of the chamber 10 up and down. In the present specification, the treatment liquid is a generic name including all of the chemical liquid, the rinse liquid, and the cleaning liquid.
　チャンバー１０は、鉛直方向に沿う側壁１１、側壁１１によって囲まれた空間の上側を閉塞する天井壁１２および下側を閉塞する床壁１３を備える。側壁１１、天井壁１２および床壁１３によって囲まれた空間が基板Ｗの処理空間となる。また、チャンバー１０の側壁１１の一部には、チャンバー１０に対して基板Ｗを搬出入するための搬出入口およびその搬出入口を開閉するシャッターが設けられている（いずれも図示省略）。 The chamber 10 includes a side wall 11 along the vertical direction, a ceiling wall 12 that closes the upper side of the space surrounded by the side wall 11, and a floor wall 13 that closes the lower side. A space surrounded by the side wall 11, the ceiling wall 12, and the floor wall 13 is a processing space for the substrate W. Further, a part of the side wall 11 of the chamber 10 is provided with a carry-in / out opening for carrying the substrate W in / out of the chamber 10 and a shutter for opening / closing the carry-in / out opening (both not shown).
　チャンバー１０の天井壁１２には、基板処理装置１が設置されているクリーンルーム内の空気をさらに清浄化してチャンバー１０内の処理空間に供給するためのファンフィルタユニット（ＦＦＵ）１４が取り付けられている。ファンフィルタユニット１４は、クリーンルーム内の空気を取り込んでチャンバー１０内に送り出すためのファンおよびフィルタ（例えばＨＥＰＡフィルタ）を備えており、チャンバー１０内の処理空間に清浄空気のダウンフローを形成する。ファンフィルタユニット１４から供給された清浄空気を均一に分散するために、多数の吹出し孔を穿設したパンチングプレートを天井壁１２の直下に設けるようにしても良い。 A fan filter unit (FFU) 14 for further purifying the air in the clean room in which the substrate processing apparatus 1 is installed and supplying it to the processing space in the chamber 10 is attached to the ceiling wall 12 of the chamber 10. . The fan filter unit 14 includes a fan and a filter (for example, a HEPA filter) for taking in air in the clean room and sending it out into the chamber 10, and forms a downflow of clean air in the processing space in the chamber 10. In order to disperse the clean air supplied from the fan filter unit 14 uniformly, a punching plate having a large number of blowing holes may be provided directly below the ceiling wall 12.
　スピンチャック２０は、鉛直方向に沿って延びる回転軸２４の上端に水平姿勢で固定された円板形状のスピンベース２１を備える。スピンベース２１の下方には回転軸２４を回転させるスピンモータ２２が設けられる。スピンモータ２２は、回転軸２４を介してスピンベース２１を水平面内にて回転させる。また、スピンモータ２２および回転軸２４の周囲を取り囲むように筒状のカバー部材２３が設けられている。 The spin chuck 20 includes a disc-shaped spin base 21 fixed in a horizontal posture at the upper end of a rotating shaft 24 extending in the vertical direction. A spin motor 22 that rotates the rotating shaft 24 is provided below the spin base 21. The spin motor 22 rotates the spin base 21 in the horizontal plane via the rotation shaft 24. Further, a cylindrical cover member 23 is provided so as to surround the periphery of the spin motor 22 and the rotating shaft 24.
　円板形状のスピンベース２１の外径は、スピンチャック２０に保持される円形の基板Ｗの径よりも若干大きい。よって、スピンベース２１は、保持すべき基板Ｗの下面の全面と対向する平坦な円形のベース面２１ａを有している。 The outer diameter of the disk-shaped spin base 21 is slightly larger than the diameter of the circular substrate W held by the spin chuck 20. Therefore, the spin base 21 has a flat circular base surface 21a facing the entire lower surface of the substrate W to be held.
　スピンベース２１のベース面２１ａの周縁部には複数（本実施形態では４本）のチャックピン２６が立設されている。複数のチャックピン２６は、円形の基板Ｗの外周円に対応する円周上に沿って均等な間隔をあけて（本実施形態のように４個のチャックピン２６であれば９０°間隔にて）配置されている。複数のチャックピン２６は、スピンベース２１内に収容された図示省略のリンク機構によって連動して駆動される。スピンチャック２０は、複数のチャックピン２６のそれぞれを基板Ｗの外周端に当接させて基板Ｗを把持することにより、当該基板Ｗをスピンベース２１の上方でベース面２１ａから所定の間隔を隔てた水平姿勢にて保持することができるとともに（図２参照）、複数のチャックピン２６のそれぞれを基板Ｗの外周端から離間させて把持を解除することができる。 A plurality (four in this embodiment) of chuck pins 26 are provided upright at the peripheral edge of the base surface 21a of the spin base 21. The plurality of chuck pins 26 are evenly spaced along the circumference corresponding to the outer circumference of the circular substrate W (if there are four chuck pins 26 as in this embodiment, the chuck pins 26 are spaced at 90 ° intervals. ) Is arranged. The plurality of chuck pins 26 are driven in conjunction with a link mechanism (not shown) housed in the spin base 21. The spin chuck 20 holds the substrate W by bringing each of the plurality of chuck pins 26 into contact with the outer peripheral end of the substrate W, thereby separating the substrate W from the base surface 21 a above the spin base 21. In addition, the gripping can be released by separating each of the plurality of chuck pins 26 from the outer peripheral end of the substrate W (see FIG. 2).
　スピンモータ２２を覆うカバー部材２３は、その下端がチャンバー１０の床壁１３に固定され、上端がスピンベース２１の直下にまで到達している。カバー部材２３の上端部には、カバー部材２３から外方へほぼ水平に張り出し、さらに下方に屈曲して延びる鍔状部材２５が設けられている。複数のチャックピン２６による把持によってスピンチャック２０が基板Ｗを保持した状態にて、スピンモータ２２が回転軸２４を回転させることにより、基板Ｗの中心を通る鉛直方向に沿った回転軸ＣＸまわりに基板Ｗを回転させることができる。なお、スピンモータ２２の駆動は制御部９によって制御される。このように、スピンチャック２０は、基板Ｗを水平に保持する基板保持手段として機能する。また、スピンモータ２２は、回転軸ＣＸを中心としてスピンチャック２０に保持された基板Ｗを回転させる基板回転部として機能する。 The lower end of the cover member 23 covering the spin motor 22 is fixed to the floor wall 13 of the chamber 10 and the upper end reaches just below the spin base 21. At the upper end portion of the cover member 23, a hook-like member 25 is provided that protrudes almost horizontally outward from the cover member 23 and further bends and extends downward. The spin motor 22 rotates the rotary shaft 24 in a state where the spin chuck 20 holds the substrate W by gripping by the plurality of chuck pins 26, thereby rotating around the rotation axis CX along the vertical direction passing through the center of the substrate W. The substrate W can be rotated. The driving of the spin motor 22 is controlled by the control unit 9. Thus, the spin chuck 20 functions as a substrate holding unit that holds the substrate W horizontally. The spin motor 22 functions as a substrate rotating unit that rotates the substrate W held by the spin chuck 20 around the rotation axis CX.
　上面処理液ノズル３０は、ノズルアーム３２の先端に吐出ヘッド３１を取り付けて構成されている。ノズルアーム３２の基端側はノズル基台３３に固定して連結されている。ノズル基台３３は図示を省略するモータによって鉛直方向に沿った軸のまわりで回動可能とされている。ノズル基台３３が回動することにより、上面処理液ノズル３０の吐出ヘッド３１はスピンチャック２０の上方の処理位置と液受け部４０よりも外側の待機位置との間で水平方向に沿って円弧状に移動する。上面処理液ノズル３０には、複数種の処理液（少なくとも純水を含む）が供給されるように構成されている。処理位置にて上面処理液ノズル３０の吐出ヘッド３１から吐出された処理液はスピンチャック２０に保持された基板Ｗの上面に着液する。また、ノズル基台３３の回動によって、上面処理液ノズル３０はスピンベース２１のベース面２１ａの上方にて揺動可能とされている。 The top treatment liquid nozzle 30 is configured by attaching a discharge head 31 to the tip of a nozzle arm 32. The proximal end side of the nozzle arm 32 is fixedly connected to the nozzle base 33. The nozzle base 33 can be rotated around an axis along the vertical direction by a motor (not shown). As the nozzle base 33 rotates, the ejection head 31 of the upper processing liquid nozzle 30 is circular in the horizontal direction between the processing position above the spin chuck 20 and the standby position outside the liquid receiving portion 40. Move in an arc. The upper surface treatment liquid nozzle 30 is configured to be supplied with a plurality of kinds of treatment liquids (including at least pure water). The processing liquid discharged from the discharge head 31 of the upper surface processing liquid nozzle 30 at the processing position is deposited on the upper surface of the substrate W held by the spin chuck 20. Further, the upper surface treatment liquid nozzle 30 can be swung above the base surface 21 a of the spin base 21 by the rotation of the nozzle base 33.
　一方、回転軸２４の内側を挿通するようにして鉛直方向に沿って下面処理液ノズル２８が設けられている。下面処理液ノズル２８の上端開口は、スピンチャック２０に保持された基板Ｗの下面中央に対向する位置に形成されている。下面処理液ノズル２８にも複数種の処理液が供給されるように構成されている。下面処理液ノズル２８から吐出された処理液はスピンチャック２０に保持された基板Ｗの下面に着液する。 On the other hand, a lower surface treatment liquid nozzle 28 is provided along the vertical direction so as to pass through the inside of the rotating shaft 24. The upper end opening of the lower surface treatment liquid nozzle 28 is formed at a position facing the lower surface center of the substrate W held by the spin chuck 20. A plurality of types of processing liquids are also supplied to the lower surface processing liquid nozzle 28. The processing liquid discharged from the lower surface processing liquid nozzle 28 is deposited on the lower surface of the substrate W held by the spin chuck 20.
　また、基板処理装置１には、上面処理液ノズル３０とは別に二流体ノズル６０が設けられている。二流体ノズル６０は、純水などの処理液と加圧した気体とを混合して液滴を生成し、その液滴と気体との混合流体（二流体）を基板Ｗに噴射するノズルである。二流体ノズル６０は、ノズルアーム６２の先端に図示省略の液体ヘッドを取り付けるとともに、ノズルアーム６２から分岐するように設けられた支持部材に気体ヘッド６４を取り付けて構成されている。ノズルアーム６２の基端側はノズル基台６３に固定して連結されている。ノズル基台６３は図示を省略するモータによって鉛直方向に沿った軸のまわりで回動可能とされている。ノズル基台６３が回動することにより、二流体ノズル６０はスピンチャック２０の上方の処理位置と液受け部４０よりも外側の待機位置との間で水平方向に沿って円弧状に移動する。液体ヘッドには純水などの処理液が供給され、気体ヘッド６４には加圧された不活性ガス（本実施形態では窒素ガス（Ｎ２））が供給される。処理位置にて二流体ノズル６０から噴出された処理液の混合流体はスピンチャック２０に保持された基板Ｗの上面に吹き付けられる。このように、下面処理液ノズル２８、上面処理液ノズル３０、および二流体ノズル６０は、それぞれスピンチャック２０に保持された基板Ｗに向けて処理液を供給する処理液供給部として機能する。 Further, the substrate processing apparatus 1 is provided with a two-fluid nozzle 60 in addition to the upper surface processing liquid nozzle 30. The two-fluid nozzle 60 is a nozzle that generates a droplet by mixing a treatment liquid such as pure water and a pressurized gas, and jets a mixed fluid (two-fluid) of the droplet and the gas onto the substrate W. . The two-fluid nozzle 60 is configured by attaching a liquid head (not shown) to the tip of a nozzle arm 62 and attaching a gas head 64 to a support member provided so as to branch from the nozzle arm 62. The base end side of the nozzle arm 62 is fixedly connected to the nozzle base 63. The nozzle base 63 can be rotated around an axis along the vertical direction by a motor (not shown). As the nozzle base 63 rotates, the two-fluid nozzle 60 moves in an arc along the horizontal direction between the processing position above the spin chuck 20 and the standby position outside the liquid receiving portion 40. A treatment liquid such as pure water is supplied to the liquid head, and a pressurized inert gas (nitrogen gas (N 2 in this embodiment)) is supplied to the gas head 64. The mixed fluid of the processing liquid ejected from the two-fluid nozzle 60 at the processing position is sprayed onto the upper surface of the substrate W held by the spin chuck 20. As described above, the lower surface processing liquid nozzle 28, the upper surface processing liquid nozzle 30, and the two-fluid nozzle 60 function as a processing liquid supply unit that supplies the processing liquid toward the substrate W held by the spin chuck 20.
　液受け部４０は、互いに独立して昇降可能な回収部４１およびカップ４２、４３を備えている。回収部４１は、スピンチャック２０の周囲を取り囲み、スピンチャック２０に保持された基板Ｗの中心を通る回転軸ＣＸに対してほぼ回転対称となる形状を有している。この回収部４１は、平面視円環状の底部４４と、底部４４の内周縁から上方に立ち上がる円筒状の内壁部４５と、底部４４の外周縁から上方に立ち上がる円筒状の外壁部４６と、内壁部４５と外壁部４６との間から上方に立ち上がる円筒状の中壁部４８とを一体的に備えている。 The liquid receiving part 40 includes a collecting part 41 and cups 42 and 43 that can be moved up and down independently of each other. The collection unit 41 surrounds the spin chuck 20 and has a shape that is substantially rotationally symmetric with respect to the rotation axis CX that passes through the center of the substrate W held by the spin chuck 20. The recovery portion 41 includes an annular bottom 44 in plan view, a cylindrical inner wall 45 rising upward from the inner periphery of the bottom 44, a cylindrical outer wall 46 rising upward from the outer periphery of the bottom 44, and an inner wall A cylindrical middle wall portion 48 that rises upward from between the portion 45 and the outer wall portion 46 is integrally provided.
　内壁部４５は、回収部４１が最も上昇された状態で、カバー部材２３と鍔状部材２５との間に適当な隙間を保って収容されるような長さに形成されている。中壁部４８は、回収部４１とカップ４２とが最も近接した状態で、カップ４２の後述する案内部５２と処理液分離壁５３との間に適当な隙間を保って収容されるような長さに形成されている。 The inner wall portion 45 is formed in such a length that it can be accommodated with an appropriate gap between the cover member 23 and the bowl-like member 25 in a state where the recovery portion 41 is raised most. The middle wall portion 48 is long enough to be accommodated with a suitable gap between a guide portion 52 (to be described later) of the cup 42 and the treatment liquid separation wall 53 in a state where the recovery portion 41 and the cup 42 are closest to each other. Is formed.
　内壁部４５と中壁部４８との間は、使用済みの処理液を集めて廃棄するための廃棄溝４９とされている。また、中壁部４８と外壁部４６との間は、使用済みの処理液を集めて回収するための円環状の外側回収溝５１とされている。 Between the inner wall portion 45 and the middle wall portion 48, a disposal groove 49 is provided for collecting and discarding used processing liquid. Further, an annular outer collection groove 51 for collecting and collecting used processing liquid is formed between the middle wall portion 48 and the outer wall portion 46.
　廃棄溝４９には、この廃棄溝４９に集められた処理液を排出するとともに、廃棄溝４９内を強制的に排気するための図示省略の排気液機構が接続されている。排気液機構は、例えば、廃棄溝４９の周方向に沿って等間隔で４つ設けられている。また、外側回収溝５１には、外側回収溝５１に集められた処理液を基板処理装置１の外部に設けられた回収タンクに回収するための回収機構（図示省略）が接続されている。なお、外側回収溝５１の底部は、水平方向に対して微少角度だけ傾斜しており、その最も低くなる位置に回収機構が接続されている。これにより、外側回収溝５１に流れ込んだ処理液が円滑に回収される。 The waste groove 49 is connected to an exhaust liquid mechanism (not shown) for discharging the processing liquid collected in the waste groove 49 and forcibly exhausting the waste groove 49. For example, four exhaust fluid mechanisms are provided at equal intervals along the circumferential direction of the discard groove 49. The outer recovery groove 51 is connected to a recovery mechanism (not shown) for recovering the processing liquid collected in the outer recovery groove 51 to a recovery tank provided outside the substrate processing apparatus 1. The bottom of the outer collection groove 51 is inclined by a slight angle with respect to the horizontal direction, and the collection mechanism is connected to the lowest position. Thereby, the processing liquid that has flowed into the outer recovery groove 51 is recovered smoothly.
　カップ４２は、スピンチャック２０の周囲を取り囲み、スピンチャック２０に保持された基板Ｗの中心を通る回転軸ＣＸに対してほぼ回転対称となる形状を有している。このカップ４２は、案内部５２と、この案内部５２に連結された円筒状の処理液分離壁５３とを一体的に備えている。 The cup 42 surrounds the periphery of the spin chuck 20 and has a shape that is substantially rotationally symmetric with respect to the rotation axis CX passing through the center of the substrate W held by the spin chuck 20. The cup 42 is integrally provided with a guide portion 52 and a cylindrical processing liquid separation wall 53 connected to the guide portion 52.
　案内部５２は、回収部４１の中壁部４８の内側において、中壁部４８の下端部と同軸円筒状をなす下端部５２ａと、下端部５２ａの上端から滑らかな円弧を描きつつ中心側（基板Ｗの回転軸ＣＸに近づく方向）斜め上方に延びる上端部５２ｂと、上端部５２ｂの先端部を下方に折り返して形成される折返し部５２ｃとを有している。下端部５２ａは、回収部４１とカップ４２とが最も近接した状態で、内壁部４５と中壁部４８との間に適当な隙間を保って廃棄溝４９内に収容される。 The guide portion 52 has a lower end portion 52a that is coaxial with the lower end portion of the middle wall portion 48 on the inner side of the middle wall portion 48 of the collecting portion 41, and a center side while drawing a smooth arc from the upper end of the lower end portion 52a ( It has an upper end 52b that extends obliquely upward (in a direction approaching the rotation axis CX of the substrate W) and a folded portion 52c that is formed by folding the tip of the upper end 52b downward. The lower end portion 52a is accommodated in the disposal groove 49 with an appropriate gap between the inner wall portion 45 and the middle wall portion 48 in a state where the collecting portion 41 and the cup 42 are closest to each other.
　また、案内部５２の上端部５２ｂは、下方ほど肉厚が厚くなるように形成されており、処理液分離壁５３は上端部５２ｂの下端外周縁部から下方に延びるように設けられた円筒形状を有している。処理液分離壁５３は、回収部４１とカップ４２とが最も近接した状態で、中壁部４８とカップ４３との間に適当な隙間を保って外側回収溝５１内に収容される。 Further, the upper end portion 52b of the guide portion 52 is formed so as to increase in thickness toward the lower side, and the processing liquid separation wall 53 is provided in a cylindrical shape so as to extend downward from the lower peripheral edge of the upper end portion 52b. have. The processing liquid separation wall 53 is accommodated in the outer recovery groove 51 with an appropriate gap between the middle wall portion 48 and the cup 43 in a state where the recovery portion 41 and the cup 42 are closest to each other.
　カップ４３は、カップ４２の案内部５２の外側において、スピンチャック２０の周囲を取り囲み、スピンチャック２０に保持された基板Ｗの中心を通る回転軸ＣＸに対してほぼ回転対称となる形状を有している。このカップ４３は、案内部としての機能を有する。カップ４３は、案内部５２の下端部５２ａと同軸円筒状をなす下端部４３ａと、下端部４３ａの上端から滑らかな円弧を描きつつ中心側（基板Ｗの回転軸ＣＸに近づく方向）斜め上方に延びる上端部４３ｂと、上端部４３ｂの先端部を下方に折り返して形成される折返し部４３ｃとを有している。 The cup 43 has a shape that is substantially rotationally symmetric with respect to a rotation axis CX that surrounds the spin chuck 20 and passes through the center of the substrate W held by the spin chuck 20 outside the guide portion 52 of the cup 42. ing. The cup 43 has a function as a guide part. The cup 43 has a lower end portion 43a that is coaxially cylindrical with the lower end portion 52a of the guide portion 52, and is inclined obliquely upward from the upper end of the lower end portion 43a while drawing a smooth arc (in the direction approaching the rotation axis CX of the substrate W). It has an upper end portion 43b that extends and a folded portion 43c that is formed by folding the tip end portion of the upper end portion 43b downward.
　下端部４３ａは、回収部４１とカップ４３とが最も近接した状態で、カップ４２の処理液分離壁５３と回収部４１の外壁部４６との間に適当な隙間を保って外側回収溝５１内に収容される。また、上端部４３ｂは、カップ４２の案内部５２と上下方向に重なるように設けられ、カップ４２とカップ４３とが最も近接した状態で、案内部５２の上端部５２ｂに対してごく微小な間隔を保って近接する。さらに、上端部４３ｂの先端部を下方に折り返して形成される折返し部４３ｃは、カップ４２とカップ４３とが最も近接した状態で、折返し部４３ｃが案内部５２の折返し部５２ｃと水平方向に重なるように形成されている。 The lower end 43 a is located in the outer collection groove 51 with an appropriate gap between the processing liquid separation wall 53 of the cup 42 and the outer wall 46 of the collection unit 41 in a state where the collection unit 41 and the cup 43 are closest to each other. Is housed. Further, the upper end portion 43b is provided so as to overlap the guide portion 52 of the cup 42 in the vertical direction, and a very small distance from the upper end portion 52b of the guide portion 52 in a state where the cup 42 and the cup 43 are closest to each other. Keep close. Further, the folded portion 43c formed by folding the tip end portion of the upper end portion 43b downward overlaps the folded portion 43c in the horizontal direction with the folded portion 52c of the guide portion 52 in a state where the cup 42 and the cup 43 are closest to each other. It is formed as follows.
　回収部４１およびカップ４２、４３は互いに独立して昇降可能とされている。すなわち、回収部４１およびカップ４２、４３のそれぞれには個別に昇降機構（図示省略）が設けられており、それによって別個独立して昇降される。このような昇降機構としては、例えばボールネジ機構やエアシリンダなどの公知の種々の機構を採用することができる。 The collection unit 41 and the cups 42 and 43 can be moved up and down independently of each other. In other words, each of the collection unit 41 and the cups 42 and 43 is provided with an elevating mechanism (not shown), and is thereby raised and lowered separately. As such an elevating mechanism, various known mechanisms such as a ball screw mechanism and an air cylinder can be employed.
　また、液受け部４０は、カップ４２の下端部５２ａの内側に取付けられる円筒状の集液部７０を有する。図３は、集液部７０の水平断面を示す断面図である。図４は、内側（回転軸ＣＸ側）から視た集液部７０の側面図である。 The liquid receiving part 40 has a cylindrical liquid collecting part 70 attached to the inside of the lower end part 52a of the cup 42. FIG. 3 is a cross-sectional view showing a horizontal cross section of the liquid collection unit 70. FIG. 4 is a side view of the liquid collection unit 70 as viewed from the inside (rotation axis CX side).
　集液部７０の内周面７５は、スピンチャック２０に保持された基板Ｗ側に露出した複数の溝７１を有する。各溝７１の延在方向は鉛直方向に沿っている。内周面７５は、周方向において、基準面７６よりも窪んだ複数の溝７１と、隣り合う溝７１間に位置し且つ基準面７６に沿う複数の土手部７２と、を交互に有する。 The inner peripheral surface 75 of the liquid collecting part 70 has a plurality of grooves 71 exposed on the substrate W side held by the spin chuck 20. The extending direction of each groove 71 is along the vertical direction. The inner peripheral surface 75 alternately has a plurality of grooves 71 recessed from the reference surface 76 and a plurality of bank portions 72 positioned between the adjacent grooves 71 and along the reference surface 76 in the circumferential direction.
　各溝７１の形状および大きさは同一であり、各溝７１は平面視において半円状の窪みとなっている。また、各土手部７２の形状および大きさも同一となっている。基準面７６に沿う各溝７１の第１長さｄ１（例えば、８ｍｍ）は、基準面７６に沿う各土手部７２の第２長さｄ２（例えば、１ｍｍ）よりも長い。集液部７０は、処理液を受ける観点から耐薬性等を有していることが望ましく、例えばテフロン（登録商標）素材で構成される。より具体的には、例えば、集液部７０は、ＰＴＦＥ（polytetrafluoroethylene：ポリテトラフルオロエチレン）で構成される。 The shape and size of each groove 71 are the same, and each groove 71 is a semicircular recess in plan view. Further, the shape and size of each bank portion 72 are also the same. The first length d1 (for example, 8 mm) of each groove 71 along the reference surface 76 is longer than the second length d2 (for example, 1 mm) of each bank portion 72 along the reference surface 76. The liquid collection unit 70 desirably has chemical resistance and the like from the viewpoint of receiving the treatment liquid, and is made of, for example, a Teflon (registered trademark) material. More specifically, for example, the liquid collection unit 70 is made of PTFE (polytetrafluoroethylene).
　集液部７０は、基板Ｗから飛散し内周面７５に付着した処理液の液滴を各溝７１内で合流させて、合流後の液滴をその自重により溝７１の延在方向に沿って下向きに落下させる。落下した液滴は、廃棄溝４９を通じて図示省略の排気液機構により基板処理装置１から排出される。 The liquid collection unit 70 joins the droplets of the processing liquid scattered from the substrate W and adhering to the inner peripheral surface 75 in each groove 71, and the liquid droplets after joining are along the extending direction of the groove 71 by its own weight. And drop it down. The dropped liquid droplets are discharged from the substrate processing apparatus 1 by the exhaust liquid mechanism (not shown) through the discard groove 49.
　仕切板１５は、液受け部４０の周囲においてチャンバー１０の内側空間を上下に仕切るように設けられている。仕切板１５は、液受け部４０を取り囲む１枚の板状部材であっても良いし、複数の板状部材をつなぎ合わせたものであっても良い。また、仕切板１５には、厚さ方向に貫通する貫通孔や切り欠きが形成されていても良く、本実施形態では上面処理液ノズル３０および二流体ノズル６０のノズル基台３３、６３を支持するための支持軸を通すための貫通穴が形成されている。 The partition plate 15 is provided so as to partition the inner space of the chamber 10 up and down around the liquid receiving portion 40. The partition plate 15 may be a single plate-like member surrounding the liquid receiving portion 40, or may be a combination of a plurality of plate-like members. Further, the partition plate 15 may be formed with through holes or notches penetrating in the thickness direction. In this embodiment, the partition plate 15 supports the nozzle bases 33 and 63 of the upper treatment liquid nozzle 30 and the two-fluid nozzle 60. A through hole is formed through which a support shaft is inserted.
　仕切板１５の外周端はチャンバー１０の側壁１１に連結されている。また、仕切板１５の液受け部４０を取り囲む端縁部はカップ４３の外径よりも大きな径の円形形状となるように形成されている。よって、仕切板１５がカップ４３の昇降の障害となることはない。 The outer peripheral end of the partition plate 15 is connected to the side wall 11 of the chamber 10. Further, the edge portion surrounding the liquid receiving portion 40 of the partition plate 15 is formed to have a circular shape having a diameter larger than the outer diameter of the cup 43. Therefore, the partition plate 15 does not become an obstacle to the raising and lowering of the cup 43.
　また、チャンバー１０の側壁１１の一部であって、床壁１３の近傍には排気ダクト１８が設けられている。排気ダクト１８は図示省略の排気機構に連通接続されている。ファンフィルタユニット１４から供給されてチャンバー１０内を流下した清浄空気のうち、液受け部４０と仕切板１５との間を通過した空気は排気ダクト１８から装置外に排出される。 Further, an exhaust duct 18 is provided in a part of the side wall 11 of the chamber 10 and in the vicinity of the floor wall 13. The exhaust duct 18 is connected in communication with an exhaust mechanism (not shown). Of the clean air supplied from the fan filter unit 14 and flowing down in the chamber 10, the air that has passed between the liquid receiver 40 and the partition plate 15 is discharged from the exhaust duct 18 to the outside of the apparatus.
　基板処理装置１に設けられた制御部９のハードウェアとしての構成は一般的なコンピュータと同様である。すなわち、制御部９は、各種演算処理を行うＣＰＵ、基本プログラムを記憶する読み出し専用のメモリであるＲＯＭ、各種情報を記憶する読み書き自在のメモリであるＲＡＭおよび制御用ソフトウェアやデータなどを記憶しておく磁気ディスクなどを備えて構成される。制御部９のＣＰＵが所定の処理プログラムを実行することによって、基板処理装置１の各動作機構が制御部９に制御され、基板処理装置１における処理が進行する。 The hardware configuration of the control unit 9 provided in the substrate processing apparatus 1 is the same as that of a general computer. That is, the control unit 9 stores a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, control software, data, and the like. It is configured with a magnetic disk to be placed. When the CPU of the control unit 9 executes a predetermined processing program, each operation mechanism of the substrate processing apparatus 1 is controlled by the control unit 9, and processing in the substrate processing apparatus 1 proceeds.
　＜１．２　処理の一例＞
　基板Ｗの処理手順の一例について概説する。以下では、回転中の基板Ｗの表面に対して、薬液処理、純水リンス処理、ＩＰＡ（isopropyl alcohol：イソプロピルアルコール）処理を順に行った後、基板Ｗをより高速で回転させて振り切り乾燥処理を行う場合について説明する。基板Ｗへの各処理を行う際には、スピンチャック２０に基板Ｗを保持するとともに、液受け部４０が昇降動作を行う。 <1.2 Example of processing>
An example of the processing procedure for the substrate W will be outlined. In the following, the surface of the rotating substrate W is subjected to chemical treatment, pure water rinsing treatment, and IPA (isopropyl alcohol) treatment in this order, and then the substrate W is rotated at a higher speed to perform a shake-off drying treatment. The case where it performs is demonstrated. When performing each process on the substrate W, the substrate W is held on the spin chuck 20 and the liquid receiving unit 40 moves up and down.
　図５は、薬液処理および純水リンス処理の様子を示す基板処理装置１の部分拡大図である。図６は、ＩＰＡ処理の様子を示す基板処理装置１の部分拡大図である。なお、図５および図６では、基板Ｗの上面を流動する処理液を実線矢印で表現し、基板Ｗの端縁部から側方に飛散する処理液を２つの破線矢印で表現している。以下では、図５および図６を参照しつつ、処理の一例について説明する。 FIG. 5 is a partially enlarged view of the substrate processing apparatus 1 showing the state of the chemical treatment and the pure water rinsing treatment. FIG. 6 is a partially enlarged view of the substrate processing apparatus 1 showing a state of the IPA processing. 5 and 6, the processing liquid that flows on the upper surface of the substrate W is represented by a solid arrow, and the processing liquid that scatters laterally from the edge of the substrate W is represented by two dashed arrows. Hereinafter, an example of processing will be described with reference to FIGS. 5 and 6.
　基板Ｗに薬液処理を行うときには、例えば回収部４１およびカップ４２、４３の全てが上昇し、スピンチャック２０に保持された基板Ｗの周囲がカップ４２の案内部５２によって取り囲まれる（図５）。この状態にて基板Ｗがスピンチャック２０とともに回転され、吐出ヘッド３１から基板Ｗの上面に薬液（例えば、ＤＨＦ液）が供給される。供給された薬液は基板Ｗの回転による遠心力によって基板Ｗの上面に沿って流れ、やがて基板Ｗの端縁部から側方に向けて飛散される。これにより、基板Ｗの薬液処理が進行する。回転する基板Ｗの端縁部から飛散した薬液は案内部５２の内壁および集液部７０の内周面７５を伝って流下し、廃棄溝４９から排出される。 When performing the chemical treatment on the substrate W, for example, all of the recovery unit 41 and the cups 42 and 43 are raised, and the periphery of the substrate W held by the spin chuck 20 is surrounded by the guide unit 52 of the cup 42 (FIG. 5). In this state, the substrate W is rotated together with the spin chuck 20, and a chemical solution (for example, DHF solution) is supplied from the ejection head 31 to the upper surface of the substrate W. The supplied chemical solution flows along the upper surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W, and is eventually scattered from the edge of the substrate W to the side. Thereby, the chemical treatment of the substrate W proceeds. The chemical liquid splashed from the edge of the rotating substrate W flows down along the inner wall of the guide portion 52 and the inner peripheral surface 75 of the liquid collecting portion 70 and is discharged from the discard groove 49.
　次に、基板Ｗに純水リンス処理が行われる。この際も、例えば回収部４１およびカップ４２、４３の全てが上昇し、スピンチャック２０に保持された基板Ｗの周囲がカップ４２の案内部５２によって取り囲まれる状態が維持される（図５）。この状態にて基板Ｗがスピンチャック２０とともに回転され、吐出ヘッド３１から基板Ｗの上面に純水が供給される。供給された純水は基板Ｗの回転による遠心力によって基板Ｗの上面に沿って流れ、やがて基板Ｗの端縁部から側方に向けて飛散される。これにより、基板Ｗの純水リンス処理が進行する。回転する基板Ｗの端縁部から飛散した純水は案内部５２の内壁および集液部７０の内周面７５を伝って流下し、廃棄溝４９から排出される。 Next, a pure water rinsing process is performed on the substrate W. Also in this case, for example, all of the recovery part 41 and the cups 42 and 43 are raised, and the state where the periphery of the substrate W held by the spin chuck 20 is surrounded by the guide part 52 of the cup 42 is maintained (FIG. 5). In this state, the substrate W is rotated together with the spin chuck 20, and pure water is supplied from the ejection head 31 to the upper surface of the substrate W. The supplied pure water flows along the upper surface of the substrate W by the centrifugal force generated by the rotation of the substrate W, and is eventually scattered from the edge of the substrate W to the side. Thereby, the pure water rinse process of the board | substrate W advances. The pure water scattered from the end edge of the rotating substrate W flows down along the inner wall of the guide portion 52 and the inner peripheral surface 75 of the liquid collecting portion 70 and is discharged from the discard groove 49.
　次に、基板ＷにＩＰＡ処理が行われる。この際には、例えば、回収部４１およびカップ４２が下降し、カップ４３のみが上昇した状態になる。その結果、カップ４３の上端部４３ｂとカップ４２の案内部５２の上端部５２ｂとの間に、スピンチャック２０に保持された基板Ｗの周囲を取り囲む開口が形成される（図６）。この状態にて基板Ｗがスピンチャック２０とともに回転され、吐出ヘッド３１から基板Ｗの上面にＩＰＡが供給される。供給されたＩＰＡは基板Ｗの回転による遠心力によって基板Ｗの上面に沿って流れ、やがて基板Ｗの端縁部から側方に向けて飛散される。これにより、基板ＷのＩＰＡ処理が進行する。回転する基板Ｗの端縁部から飛散したＩＰＡはカップ４２の上端部５２ｂおよびカップ４３の上端部４３ｂによって受け止められ、カップ４２の外面およびカップ４３の内面を伝って流下し、外側回収溝５１に回収される。 Next, IPA processing is performed on the substrate W. At this time, for example, the collection unit 41 and the cup 42 are lowered, and only the cup 43 is raised. As a result, an opening surrounding the periphery of the substrate W held by the spin chuck 20 is formed between the upper end portion 43b of the cup 43 and the upper end portion 52b of the guide portion 52 of the cup 42 (FIG. 6). In this state, the substrate W is rotated together with the spin chuck 20, and IPA is supplied from the ejection head 31 to the upper surface of the substrate W. The supplied IPA flows along the upper surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W, and is eventually scattered from the edge of the substrate W to the side. Thereby, the IPA process of the substrate W proceeds. The IPA splashed from the edge of the rotating substrate W is received by the upper end 52b of the cup 42 and the upper end 43b of the cup 43, flows down along the outer surface of the cup 42 and the inner surface of the cup 43, and enters the outer collection groove 51. To be recovered.
　また、振り切り乾燥処理を行うときには、回収部４１およびカップ４２、４３の全てが下降し、カップ４３の上端部４３ｂの外側上面４３ｄがスピンチャック２０に保持された基板Ｗよりも下方に位置する（図２）。この状態にて基板Ｗがスピンチャック２０とともに高速回転され、基板Ｗに付着していた水滴が遠心力によって振り切られ、乾燥処理が行われる。 When performing the swing-off drying process, all of the collection unit 41 and the cups 42 and 43 are lowered, and the outer upper surface 43d of the upper end portion 43b of the cup 43 is positioned below the substrate W held by the spin chuck 20 ( Figure 2). In this state, the substrate W is rotated at a high speed together with the spin chuck 20, and water droplets adhering to the substrate W are shaken off by a centrifugal force, and a drying process is performed.
　＜１．３　効果＞
　図７は、比較例において薬液処理の様子を示す図である。図７では、基板Ｗの上面を流動する処理液を実線矢印で表現し、基板Ｗの端縁部から側方に飛散する処理液を２つの破線矢印で表現している。図８は、比較例において、処理液の液滴１０１、１０２が移動する様子を模式的に表した横断面図である。図９は、本実施形態において、処理液の液滴１０１～１０３が移動する様子を模式的に表した横断面図である。図８および図９では、各液滴の移動方向を実線矢印で表現している。 <1.3 Effect>
FIG. 7 is a diagram showing a state of chemical treatment in the comparative example. In FIG. 7, the processing liquid that flows on the upper surface of the substrate W is represented by solid arrows, and the processing liquid that scatters laterally from the edge of the substrate W is represented by two dashed arrows. FIG. 8 is a cross-sectional view schematically showing how the treatment liquid droplets 101 and 102 move in the comparative example. FIG. 9 is a cross-sectional view schematically showing how the treatment liquid droplets 101 to 103 move in the present embodiment. 8 and 9, the moving direction of each droplet is expressed by a solid line arrow.
　液受け部４０の内周面に付着した処理液を放置すると、該処理液が固化してパーティクルになる虞やスプラッシュバック現象が生じる虞がある。パーティクルの発生やスプラッシュバック現象は基板を汚染する原因となるので、このような汚染を抑制することが望ましい。 If the processing liquid adhering to the inner peripheral surface of the liquid receiving portion 40 is left unattended, the processing liquid may solidify into particles or a splash back phenomenon may occur. Since the generation of particles and the splashback phenomenon cause contamination of the substrate, it is desirable to suppress such contamination.
　比較例にかかる液受け部４０Ｙは、本実施形態に係る液受け部４０と異なり、案内部５２の内側に集液部７０を有さない。このため、比較例において基板Ｗに液処理を行うと、回転する基板Ｗの端縁部から飛散した処理液の液滴１０１はまず案内部５２の内壁に付着する。この付着した液滴１０２の一部は案内部５２の内壁に付着した状態を維持し、残りの液滴１０２は案内部５２の内壁を伝って流下し廃棄溝４９から排出される。 Unlike the liquid receiving part 40 according to the present embodiment, the liquid receiving part 40Y according to the comparative example does not have the liquid collecting part 70 inside the guide part 52. For this reason, when liquid processing is performed on the substrate W in the comparative example, the droplet 101 of the processing liquid splashed from the edge of the rotating substrate W first adheres to the inner wall of the guide portion 52. A part of the adhering droplets 102 remains attached to the inner wall of the guide portion 52, and the remaining droplets 102 flow down along the inner wall of the guide portion 52 and are discharged from the discard groove 49.
　これに対して、本実施形態に係る液受け部４０が案内部５２の内側に集液部７０を有することにより、液受け部４０の内周面に複数の溝７１が形成された状態となる。このため、本実施形態において基板Ｗに液処理を行うと、回転する基板Ｗの端縁部から飛散した処理液の液滴１０１はまず集液部７０の内周面７５に付着する。この付着した液滴１０２の大部分は各溝７１における半円状の局面に沿って流動し、他の付着した液滴１０２と合流する。その結果、合流後の液滴１０３は、液滴１０２に比べて相対的に大きな自重により溝７１の延在方向（本実施形態では鉛直方向）に沿って下向きに落下する。 On the other hand, when the liquid receiving part 40 according to the present embodiment has the liquid collecting part 70 inside the guide part 52, a plurality of grooves 71 are formed on the inner peripheral surface of the liquid receiving part 40. . For this reason, when liquid processing is performed on the substrate W in this embodiment, the droplet 101 of the processing liquid scattered from the edge of the rotating substrate W first adheres to the inner peripheral surface 75 of the liquid collecting portion 70. Most of the adhered droplets 102 flow along a semicircular aspect in each groove 71 and merge with other adhered droplets 102. As a result, the combined droplet 103 falls downward along the extending direction of the groove 71 (vertical direction in the present embodiment) due to its relatively large weight as compared with the droplet 102.
　このように、本実施形態では液受け部４０の内周面に付着した各液滴１０２の合流を促すことにより、液受け部４０の内周面に液滴１０２が付着した状態を抑制することができる。その結果、内周面に液滴１０２が付着した状態を放置すること（ひいては、パーティクルの発生やスプラッシュバック現象）に起因する汚染のリスクを低減することができる。 As described above, in the present embodiment, the state in which the droplets 102 adhere to the inner peripheral surface of the liquid receiving unit 40 is suppressed by promoting the merging of the droplets 102 attached to the inner peripheral surface of the liquid receiving unit 40. Can do. As a result, it is possible to reduce the risk of contamination caused by leaving the state where the droplets 102 are attached to the inner peripheral surface (as a result, the generation of particles and the splashback phenomenon).
　特に、液受け部４０の内周面に付着した液滴を速やかに落下させる本実施形態の態様では、液受け部の内周面に液滴を補足して維持する特許文献１や特許文献２の態様に比べて、より効果的に汚染のリスクを低減することができる。 In particular, in the aspect of the present embodiment in which the droplets attached to the inner peripheral surface of the liquid receiving unit 40 are quickly dropped, Patent Document 1 and Patent Document 2 that supplement and maintain the liquid droplets on the inner peripheral surface of the liquid receiving unit. Compared with the aspect of this, the risk of contamination can be reduced more effectively.
　図１０は、比較例におけるスプラッシュバック現象の検査結果である。図１１は、本実施形態におけるスプラッシュバック現象の検査結果である。この検査では、カップ４３の上端部４３ｂの上側にＰＨ試験紙を張り付けて、図７および図５に示す液受け部４０Ｙ、４０の昇降状態で基板Ｗに液処理を行っている。具体的には、この液処理は、８００ｒｐｍの回転速度で回転する基板Ｗの上面に、回転軸ＣＸ上に位置する吐出ヘッド３１から毎分５００ｍｌの流量でＤＨＦを供給する液処理である。この液処理は全部で５回行われ、各回ごとにＰＨ試験紙を新たなものに交換している。そして、図１０および図１１の「変色箇所の個数」欄は、ＰＨ試験紙上に処理液の液滴が付着してＰＨ試験紙が変色した箇所の個数を示している。 FIG. 10 shows the test result of the splash back phenomenon in the comparative example. FIG. 11 shows the test result of the splashback phenomenon in the present embodiment. In this inspection, a PH test paper is attached to the upper side of the upper end portion 43b of the cup 43, and the substrate W is subjected to liquid processing while the liquid receiving portions 40Y and 40 shown in FIGS. Specifically, this liquid process is a liquid process in which DHF is supplied to the upper surface of the substrate W rotating at a rotational speed of 800 rpm from the ejection head 31 located on the rotation axis CX at a flow rate of 500 ml per minute. This liquid treatment is performed five times in total, and the PH test paper is replaced with a new one each time. 10 and FIG. 11 shows the number of locations where the PH test paper has changed color due to the droplets of the treatment liquid adhering to the PH test paper.
　図１０および図１１に示すように、５回の検査を平均すると、比較例ではＰＨ試験紙に約５１個の変色箇所が生じているのに対し、本実施形態ではＰＨ試験紙に０．６個の変色箇所しか生じていない。通常、基板Ｗから飛散した液滴は該基板Ｗから略水平方向に移動するため、図７および図５に示す液受け部４０Ｙ、４０の昇降状態においてはこの液滴が直接的にカップ４３の上端部４３ｂの上側に付着することは考え難い。そうすると、カップ４３の上端部４３ｂの上側に付着した液滴は、基板から液受け部４０Ｙ、４０に向けて飛散する処理液と液受け部４０Ｙ、４０からスプラッシュバックしている処理液とが衝突して生じた液滴である可能性が高い。この観点から、図１０および図１１の検査結果を改めて視ると、本実施形態では比較例に比べてスプラッシュバック現象を９割程度低減できていることが分かる。これは、液受け部４０の内周面に液滴１０２が付着した状態を抑制する本実施形態の効果であると考えられる。 As shown in FIGS. 10 and 11, when the five inspections are averaged, in the comparative example, about 51 discoloration portions are generated in the PH test paper, whereas in the present embodiment, 0.6 is applied to the PH test paper. Only one discolored part has occurred. Usually, the droplets scattered from the substrate W move in a substantially horizontal direction from the substrate W. Therefore, when the liquid receiving portions 40Y and 40 shown in FIGS. It is difficult to think of adhering to the upper side of the upper end portion 43b. Then, the liquid droplets adhering to the upper side of the upper end portion 43b of the cup 43 collide with the processing liquid splashed from the substrate toward the liquid receiving portions 40Y and 40 and the processing liquid splashed back from the liquid receiving portions 40Y and 40. It is highly possible that the droplets are generated as a result. From this point of view, when the inspection results in FIGS. 10 and 11 are viewed again, it is understood that the splashback phenomenon can be reduced by about 90% in the present embodiment as compared with the comparative example. This is considered to be the effect of the present embodiment that suppresses the state in which the droplets 102 adhere to the inner peripheral surface of the liquid receiving portion 40.
　特に、本実施形態では、集液部７０を用いた液受けをする場合に（図５に示す場合に）、集液部７０の内周面７５が、少なくともスピンチャック２０に保持された基板Ｗと同じ鉛直方向の位置において複数の溝７１を含む。通常、基板Ｗから飛散した液滴は該基板Ｗから略水平方向に移動するため、基板Ｗと同じ鉛直方向の位置に複数の溝７１が設けられることで、より効果的に液受け部４０の内周面に付着した各液滴１０２の合流を促すことができる。 In particular, in the present embodiment, when receiving the liquid using the liquid collection unit 70 (in the case shown in FIG. 5), the inner peripheral surface 75 of the liquid collection unit 70 is at least held by the spin chuck 20. A plurality of grooves 71 are included at the same vertical position. Usually, since the droplets scattered from the substrate W move in a substantially horizontal direction from the substrate W, a plurality of grooves 71 are provided at the same position in the vertical direction as the substrate W, so that the liquid receiver 40 can be more effectively provided. The merging of the droplets 102 attached to the inner peripheral surface can be promoted.
　また、本実施形態では、各溝７１と各土手部７２とが周方向に沿って交互に配されており、基準面７６に沿う各溝７１の第１長さｄ１（例えば、８ｍｍ）が基準面７６に沿う各土手部７２の第２長さｄ２（例えば、１ｍｍ）よりも長い。このため、半円状の曲面に沿って複数の液滴を合流させる作用が相対的に強い溝７１が複数の液滴を合流させる作用が相対的に弱い土手部７２よりも内周面７５の大部分で形成されることになり、より効果的に液受け部４０の内周面に付着した各液滴１０２の合流を促すことができる。 In the present embodiment, the grooves 71 and the bank portions 72 are alternately arranged along the circumferential direction, and the first length d1 (for example, 8 mm) of the grooves 71 along the reference surface 76 is a reference. It is longer than the second length d2 (for example, 1 mm) of each bank portion 72 along the surface 76. For this reason, the groove 71 having a relatively strong action of joining a plurality of liquid droplets along the semicircular curved surface has a larger inner peripheral surface 75 than the bank portion 72 having a relatively weak action of joining the plurality of liquid drops. Most of the droplets 102 are formed, and the merging of the droplets 102 attached to the inner peripheral surface of the liquid receiving portion 40 can be promoted more effectively.
　また、本実施形態では、液受け部４０が、相対的に径が小さく基板Ｗに近い位置でスピンチャック２０の周囲を取り囲む内側のカップ４２と、相対的に径が大きく基板Ｗから遠い位置でスピンチャック２０の周囲を取り囲む外側のカップ４３とを有しする。そして、内側のカップ４２のさらに内側に集液部７０が設けられることにより、該カップ４２の内周面が複数の溝７１を含む状態となる。通常、基板Ｗに近いカップの内周面に処理液が付着している場合、基板Ｗに遠いカップの内周面に処理液が付着している場合よりも、パーティクルの発生やスプラッシュバック現象による基板汚染のリスクが高まる。本実施形態では基板汚染のリスクが高いカップ４２の内側に集液部７０を設けることで、より効果的に該リスクを低減することができる。 Further, in the present embodiment, the liquid receiving portion 40 has a relatively large diameter and a position close to the substrate W, the inner cup 42 surrounding the periphery of the spin chuck 20, and a relatively large diameter and a position far from the substrate W. And an outer cup 43 surrounding the periphery of the spin chuck 20. The liquid collection part 70 is provided further inside the inner cup 42, so that the inner peripheral surface of the cup 42 includes a plurality of grooves 71. Usually, when the processing liquid adheres to the inner peripheral surface of the cup close to the substrate W, the processing liquid adheres to the inner peripheral surface of the cup far from the substrate W. Increased risk of substrate contamination. In the present embodiment, the risk can be reduced more effectively by providing the liquid collection part 70 inside the cup 42 where the risk of substrate contamination is high.
　＜２　第２実施形態＞
　図１２は、第２実施形態に係る基板処理装置１Ａを示す断面図である。第２実施形態の基板処理装置１Ａの全体構成および処理動作は第１実施形態と概ね同様である。第２実施形態が第１実施形態と相違するのは、主として、液受け部４０Ａおよび集液部７０Ａの構成である。 <2 Second Embodiment>
FIG. 12 is a cross-sectional view showing a substrate processing apparatus 1A according to the second embodiment. The overall configuration and processing operation of the substrate processing apparatus 1A of the second embodiment are substantially the same as those of the first embodiment. The second embodiment differs from the first embodiment mainly in the configuration of the liquid receiving portion 40A and the liquid collecting portion 70A.
　第２実施形態に係る液受け部４０Ａは、第１実施形態の回収部４１に代えて、カップ４１Ａを備える。カップ４１Ａは、回収部４１の各構成に加えて、さらに、内壁部４５と中壁部４８との間から立ち上がり、上端部が滑らかな円弧を描きつつ中心側（スピンチャック２０に保持される基板Ｗの回転軸ＣＸに近づく方向）斜め上方に延びる案内部４７を有する。 40 A of liquid receiving parts which concern on 2nd Embodiment replace with the collection | recovery part 41 of 1st Embodiment, and are provided with the cup 41A. In addition to the components of the collection unit 41, the cup 41A further rises from between the inner wall 45 and the middle wall 48, and the upper end draws a smooth circular arc on the center side (the substrate held by the spin chuck 20). The guide portion 47 extends obliquely upward (in the direction approaching the rotation axis CX of W).
　案内部４７は、滑らかな円弧を描きつつ中心側（基板Ｗの回転軸ＣＸに近づく方向）斜め上方に延びる上端部４７ｂを有している。 The guide part 47 has an upper end part 47b extending obliquely upward in the center side (direction approaching the rotation axis CX of the substrate W) while drawing a smooth arc.
　また、案内部４７と中壁部４８との間は、使用済みの処理液を集めて回収するための円環状の内側回収溝５０とされている。また、内側回収溝５０の構成は、上述の外側回収溝５１の構成と同様である。具体的には、内側回収溝５０には、内側回収溝５０に集められた処理液を基板処理装置１の外部に設けられた回収タンクに回収するための回収機構（図示省略）が接続されている。なお、内側回収溝５０の底部は、水平方向に対して微少角度だけ傾斜しており、その最も低くなる位置に回収機構が接続されている。これにより、内側回収溝５０に流れ込んだ処理液が円滑に回収される。 In addition, an annular inner collection groove 50 for collecting and collecting used processing liquid is provided between the guide portion 47 and the middle wall portion 48. The configuration of the inner recovery groove 50 is the same as the configuration of the outer recovery groove 51 described above. Specifically, a recovery mechanism (not shown) for recovering the processing liquid collected in the inner recovery groove 50 to a recovery tank provided outside the substrate processing apparatus 1 is connected to the inner recovery groove 50. Yes. The bottom of the inner collection groove 50 is inclined by a slight angle with respect to the horizontal direction, and the collection mechanism is connected to the lowest position. Thereby, the process liquid which flowed into the inner collection groove 50 is collected smoothly.
　また、カップ４２の案内部５２の上端部５２ｂは、カップ４１の案内部４７の上端部４７ｂと上下方向に重なるように設けられる。このため、カップ４１とカップ４２とが最も近接した状態で、案内部５２の上端部５２ｂは、案内部４７の上端部４７ｂに対してごく微小な間隔を保って近接する。さらに、上端部５２ｂの先端を下方に折り返して形成される折返し部５２ｃは、カップ４１とカップ４２とが最も近接した状態で、案内部４７の上端部４７ｂの先端と水平方向に重なるような長さとされている。 Further, the upper end portion 52b of the guide portion 52 of the cup 42 is provided so as to overlap the upper end portion 47b of the guide portion 47 of the cup 41 in the vertical direction. For this reason, in a state where the cup 41 and the cup 42 are closest to each other, the upper end portion 52b of the guide portion 52 is close to the upper end portion 47b of the guide portion 47 with a very small interval. Further, the folded portion 52c formed by folding the tip of the upper end portion 52b downward is long enough to overlap the tip of the upper end portion 47b of the guide portion 47 in the horizontal direction with the cup 41 and the cup 42 being closest to each other. It is said.
　また、液受け部４０Ａは、カップ４１Ａの案内部４７の内側に取付けられる円筒状の集液部７０Ａを有する。集液部７０Ａの内周面７５Ａは、上記実施形態の内周面７５と同様に、周方向において、スピンチャック２０に保持された基板Ｗ側に露出した複数の溝および複数の土手部（いずれも図示省略）を交互に有する。また、第１実施形態と同様、基準面に沿う各溝の第１長さ（例えば、８ｍｍ）は、基準面に沿う各土手部の第２長さ（例えば、１ｍｍ）よりも長い。集液部７０Ａは、基板Ｗから飛散し内周面７５に付着した処理液の液滴を各溝内で合流させて、合流後の液滴をその自重により溝の延在方向に沿って下向きに落下させる。落下した液滴は、廃棄溝４９を通じて図示省略の排気液機構により基板処理装置１Ａから排出される。 Also, the liquid receiving part 40A has a cylindrical liquid collecting part 70A attached to the inside of the guide part 47 of the cup 41A. The inner peripheral surface 75A of the liquid collecting portion 70A has a plurality of grooves and a plurality of bank portions (which are exposed to the substrate W side held by the spin chuck 20 in the circumferential direction in the same manner as the inner peripheral surface 75 of the above-described embodiment. Are also alternately shown). Further, as in the first embodiment, the first length (for example, 8 mm) of each groove along the reference surface is longer than the second length (for example, 1 mm) of each bank portion along the reference surface. The liquid collection unit 70A causes the droplets of the processing liquid scattered from the substrate W and adhered to the inner peripheral surface 75 to merge in each groove, and the combined droplets are directed downward along the extending direction of the groove due to their own weight. Let fall. The dropped liquid droplet is discharged from the substrate processing apparatus 1A through the waste groove 49 by an exhaust liquid mechanism (not shown).
　図１３は、第２実施形態におけるスプラッシュバック現象の検査結果である。この検査では、カップ４３の上端部４３ｂの上側にＰＨ試験紙を張り付けて、カップ４１Ａ、４２、４３を上昇させた状態で基板Ｗに液処理を行っている。具体的には、この液処理は、８００ｒｐｍの回転速度で回転する基板Ｗの上面に、回転軸ＣＸ上に位置する吐出ヘッド３１から毎分５００ｍｌの流量でＤＨＦを供給する液処理である。この液処理は全部で５回行われ、各回ごとにＰＨ試験紙を新たなものに交換している。そして、図１３の「変色箇所の個数」欄は、ＰＨ試験紙上に処理液の液滴が付着してＰＨ試験紙が変色した箇所の個数を示している。 FIG. 13 shows the inspection result of the splash back phenomenon in the second embodiment. In this inspection, a PH test paper is attached to the upper side of the upper end portion 43b of the cup 43, and the substrate W is subjected to the liquid treatment in a state where the cups 41A, 42, and 43 are raised. Specifically, this liquid process is a liquid process in which DHF is supplied to the upper surface of the substrate W rotating at a rotational speed of 800 rpm from the ejection head 31 located on the rotation axis CX at a flow rate of 500 ml per minute. This liquid treatment is performed five times in total, and the PH test paper is replaced with a new one each time. The “number of discolored locations” column in FIG. 13 indicates the number of locations where the PH test paper has been discolored due to the treatment liquid droplets adhering to the PH test paper.
　図１３に示すように、５回の検査を平均すると、第２実施形態ではＰＨ試験紙に約１６４個の変色箇所が生じている。第２実施形態の検査結果（図１３）と第１実施形態の検査結果（図１１）を比較すると、第２実施形態の方がＰＨ試験紙の変色箇所が多い。この理由は、第２実施形態の液受け位置（カップ４１Ａの案内部４７および集液部７０Ａ）が、第１実施形態の液受け位置（カップ４２の案内部５２および集液部７０）よりも基板Ｗに近く、基板Ｗから液受け部４０Ａに向けて飛散する処理液と液受け部４０Ａからスプラッシュバックしている処理液とが衝突しやすいことに起因するものと考えられる。 As shown in FIG. 13, when the five inspections are averaged, in the second embodiment, about 164 discolored portions are generated on the PH test paper. Comparing the inspection results of the second embodiment (FIG. 13) and the inspection results of the first embodiment (FIG. 11), the second embodiment has more discolored locations on the PH test paper. The reason for this is that the liquid receiving position of the second embodiment (the guide part 47 and the liquid collecting part 70A of the cup 41A) is more than the liquid receiving position of the first embodiment (the guide part 52 and the liquid collecting part 70 of the cup 42). It is considered that the processing liquid that is close to the substrate W and splashes from the substrate W toward the liquid receiving portion 40A easily collides with the processing liquid splashed back from the liquid receiving portion 40A.
　第２実施形態においても、第１実施形態と同様に、集液部７０Ａを設けることで集液部７０Ａを設けない場合に比べて基板汚染のリスクを低減することができる。 Also in the second embodiment, similarly to the first embodiment, the risk of substrate contamination can be reduced by providing the liquid collection part 70A compared to the case where the liquid collection part 70A is not provided.
　また、第２実施形態においても、第１実施形態と同様に、基板Ｗと同じ鉛直方向の位置に複数の溝が設けられることで、より効果的に液受け部４０Ａの内周面に付着した各液滴の合流を促すことができる。 Also in the second embodiment, similarly to the first embodiment, a plurality of grooves are provided at the same position in the vertical direction as the substrate W, thereby more effectively attaching to the inner peripheral surface of the liquid receiving portion 40A. The confluence of each droplet can be promoted.
　また、第２実施形態においても、第１実施形態と同様に、複数の液滴を合流させる作用が相対的に強い溝が複数の液滴を合流させる作用が相対的に弱い土手部よりも内周面７５Ａの大部分で形成されることで、より効果的に液受け部４０Ａの内周面に付着した各液滴の合流を促すことができる。 Also in the second embodiment, as in the first embodiment, the groove that has a relatively strong action of joining a plurality of droplets is located inside the bank portion that has a relatively weak action of joining a plurality of drops. By being formed on most of the peripheral surface 75A, it is possible to promote the merging of the droplets attached to the inner peripheral surface of the liquid receiving portion 40A more effectively.
　また、第２実施形態においても、第１実施形態と同様に、基板Ｗに近く基板汚染のリスクが高いカップ４１の内側に集液部７０Ａを設けることで、より効果的に該リスクを低減することができる。 Also in the second embodiment, similarly to the first embodiment, the liquid collection unit 70A is provided inside the cup 41 that is close to the substrate W and has a high risk of substrate contamination, thereby reducing the risk more effectively. be able to.
　＜３　変形例＞
　以上、本発明の実施の形態について説明したが、この発明はその趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。 <3 Modification>
While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention.
　上記実施形態では、溝および土手部の形成された集液部７０、７０Ａをカップ４２、４１Ａの案内部５２、４７の内側に取付ける態様について説明したが、これに限られるものではない。例えば、カップ４２、４１Ａの案内部５２、４７の内側を切削することにより、該案内部５２、４７の内側に溝および土手部（すなわち、集液部）を形成してもよい。 In the above-described embodiment, the description has been given of the aspect in which the liquid collecting portions 70 and 70A in which the grooves and the bank portions are formed are attached to the inside of the guide portions 52 and 47 of the cups 42 and 41A, but is not limited thereto. For example, a groove and a bank part (that is, a liquid collecting part) may be formed inside the guide parts 52 and 47 by cutting the inside of the guide parts 52 and 47 of the cups 42 and 41A.
　また、上記第１実施形態では、案内部５２の下端部５２ａの内側の一部に集液部７０が設けられる態様について説明したが、これに限られるものではない。例えば、案内部５２の下端部５２ａの内側の全部に集液部７０が設けられる態様でもよいし、案内部５２の下端部５２ａおよび上端部５２ｂの内側の全部に集液部７０が設けられる態様でもよい。 Moreover, although the said 1st Embodiment demonstrated the aspect in which the liquid collection part 70 was provided in a part of the inner side of the lower end part 52a of the guide part 52, it is not restricted to this. For example, an aspect in which the liquid collection part 70 is provided on the entire inner side of the lower end part 52a of the guide part 52, or an aspect in which the liquid collection part 70 is provided on the entire inner side of the lower end part 52a and the upper end part 52b of the guide part 52. But you can.
　また、上記各実施形態では、液受け部４０、４０Ａが有する複数のカップのうち最も内側のカップの内周面に集液部７０、７０Ａを設ける態様について説明したが、これに限られるものではない。これら複数のカップのうち、少なくとも最も内側のカップの内周面に集液部が設けられれば、より効果的に基板汚染のリスクを低減することができる。また、これら複数のカップのうち、最も内側のカップ以外のカップの内周面にのみ集液部が設けられてもよい。 Moreover, although each said embodiment demonstrated the aspect which provides the liquid collection parts 70 and 70A in the internal peripheral surface of the innermost cup among the several cups which the liquid receiving parts 40 and 40A have, it is not restricted to this. Absent. If a liquid collection part is provided at least on the inner peripheral surface of the innermost cup among the plurality of cups, the risk of substrate contamination can be reduced more effectively. Moreover, a liquid collection part may be provided only in the inner peripheral surface of cups other than the innermost cup among these several cups.
　また、上記第１実施形態では、集液部７０がＰＴＦＥで構成される態様について説明したが、集液部７０が別の材質（例えば、ＰＦＡ）で構成される態様でもよい。 In the first embodiment, the aspect in which the liquid collection unit 70 is made of PTFE has been described. However, the liquid collection part 70 may be made of another material (for example, PFA).
　図１４は、変形例において、処理液の液滴１０１～１０３が移動する様子を模式的に表した横断面図である。図１４では、変形例に係る集液部７０Ｂの複数の溝のうち２つの溝７１Ｂを図示している。また、図１４では、図示しない基板Ｗの回転方向が紙面の反時計回りの方向であり、該基板Ｗから飛散した液滴１０１が実線矢印の軌跡で移動している。 FIG. 14 is a cross-sectional view schematically showing how the treatment liquid droplets 101 to 103 move in the modification. FIG. 14 illustrates two grooves 71B among the plurality of grooves of the liquid collection unit 70B according to the modification. In FIG. 14, the rotation direction of the substrate W (not shown) is the counterclockwise direction on the paper surface, and the droplet 101 scattered from the substrate W is moved along the locus of the solid line arrow.
　集液部７０Ｂの複数の溝は、基板Ｗの回転方向の上流側の部分よりも下流側の部分の方が深く窪んでいる溝７１Ｂを含む。言い換えると、集液部７０Ｂの複数の溝は、基板Ｗの径方向に対して該基板Ｗの回転方向に傾いた方向に窪んでいる溝７１Ｂを含む。これにより、基板Ｗから飛散して溝７１Ｂ内に着液した液滴１０２が飛散の勢いでその溝７１Ｂ内を流動しやすくなり、他の液滴１０２と合流しやすくなる。このように、溝７１Ｂの窪み形状を変形することで、液滴同士の合流を促し、液受け部の内周面に液滴１０２が付着した状態を抑制することができる。 The plurality of grooves of the liquid collection part 70B include a groove 71B in which the downstream part is deeper than the upstream part in the rotation direction of the substrate W. In other words, the plurality of grooves of the liquid collection part 70 </ b> B include grooves 71 </ b> B that are recessed in the direction inclined with respect to the radial direction of the substrate W in the rotation direction of the substrate W. As a result, the droplets 102 scattered from the substrate W and landing in the grooves 71 </ b> B easily flow in the grooves 71 </ b> B with the force of scattering, and easily merge with other droplets 102. In this way, by deforming the recess shape of the groove 71B, it is possible to promote the merging of the droplets, and to suppress the state in which the droplets 102 adhere to the inner peripheral surface of the liquid receiving portion.
　図１５は、変形例において、内側（回転軸ＣＸ側）から視た集液部７０Ｃの側面図である。図１６は、各溝７１Ｃの第１長さが８ｍｍで各土手部７２Ｃの第２長さが１ｍｍである場合のスプラッシュバック現象の検査結果である。図１７は、各溝７１Ｃの第１長さが４ｍｍで各土手部７２Ｃの第２長さが１ｍｍである場合のスプラッシュバック現象の検査結果である。図１８は、各溝７１Ｃの第１長さが２ｍｍで各土手部７２Ｃの第２長さが１ｍｍである場合のスプラッシュバック現象の検査結果である。 FIG. 15 is a side view of the liquid collection part 70C viewed from the inside (rotation axis CX side) in the modified example. FIG. 16 is a test result of the splash back phenomenon when the first length of each groove 71C is 8 mm and the second length of each bank portion 72C is 1 mm. FIG. 17 shows the inspection result of the splashback phenomenon when the first length of each groove 71C is 4 mm and the second length of each bank portion 72C is 1 mm. FIG. 18 is a test result of the splash back phenomenon when the first length of each groove 71C is 2 mm and the second length of each bank portion 72C is 1 mm.
　図１５に示すように、集液部７０Ｃの内周面７５Ｃは、周方向において、基準面よりも窪んだ複数の溝７１Ｃと、隣り合う溝７１Ｃ間に位置し且つ基準面に沿う複数の土手部７２Ｃと、を交互に有する。各溝７１Ｃの延在方向は、基板Ｗの回転方向（図１５において右から左の方向）の成分と鉛直下向きの成分とが合成された方向（より具体的には、４５度に傾いた方向）である。 As shown in FIG. 15, the inner peripheral surface 75C of the liquid collection part 70C has a plurality of grooves 71C that are recessed from the reference surface in the circumferential direction and a plurality of banks that are positioned between the adjacent grooves 71C and that extend along the reference surface. 72C alternately. The extending direction of each groove 71 </ b> C is a direction (more specifically, a direction inclined at 45 degrees) in which the component of the rotation direction of the substrate W (right to left in FIG. 15) and the vertically downward component are combined. ).
　このため、該変形例では、回転する基板Ｗから飛散した処理液の液滴が、集液部７０Ｃの内周面７５Ｃに接液した後、飛散の勢いにより複数の溝７１Ｃに沿って斜め下方に流動する。また、スピンモータ２２によって基板Ｗが回転されることにより、集液部７０Ｃの内周面７５Ｃにおいて各溝７１Ｃの延在方向に沿った気流が発生し、内周面７５Ｃに付着した液滴の落下が促される。 For this reason, in this modification, after the droplets of the processing liquid splashed from the rotating substrate W come into contact with the inner peripheral surface 75C of the liquid collecting portion 70C, the liquid drops obliquely downward along the plurality of grooves 71C due to the splashing force. To flow. Further, when the substrate W is rotated by the spin motor 22, an air flow along the extending direction of each groove 71C is generated on the inner peripheral surface 75C of the liquid collecting portion 70C, and the droplets adhering to the inner peripheral surface 75C are generated. The fall is urged.
　そして、図１６～図１８の検査結果を要約した図１９から分かるように、第１長さを短くすることで、スプラッシュバック現象が起きる可能性を低減できる。これは、溝７１Ｃの幅が狭くなることにより、溝７１Ｃ内で複数の液滴が合流しやすくなることに起因するものと考えられる。ただし、溝７１Ｃ内で複数の液滴を合流させるという観点から、基板Ｗから飛散する液滴の直径（例えば、１～２ｍｍ）よりも第１長さが広く設定されることが望ましい。 Further, as can be seen from FIG. 19 which summarizes the inspection results of FIGS. 16 to 18, the possibility of the splashback phenomenon can be reduced by shortening the first length. This is considered to be caused by the fact that a plurality of liquid droplets easily join in the groove 71C by narrowing the width of the groove 71C. However, from the viewpoint of joining a plurality of droplets in the groove 71C, it is desirable that the first length is set wider than the diameter (for example, 1 to 2 mm) of the droplets scattered from the substrate W.
　また、図１６～図１８の検査結果を要約した図１９から分かるように、第２長さが短ければ、スプラッシュバック現象が起きる可能性を低減できる。これは、土手部７２Ｃの幅が狭くなることにより、土手部７２Ｃ上に液滴が付着し難くなる（土手部７２Ｃの両隣にある各溝７１Ｃに液滴が移動しやすくなる）ことに起因するものと考えられる。 Further, as can be seen from FIG. 19 that summarizes the inspection results of FIGS. 16 to 18, if the second length is short, the possibility of the splashback phenomenon occurring can be reduced. This is due to the fact that the width of the bank portion 72C is narrowed, so that the droplets are less likely to adhere to the bank portion 72C (the droplets easily move to the respective grooves 71C adjacent to the bank portion 72C). It is considered a thing.
　また、上記各実施形態においては、液受け部が互いに独立して昇降可能な複数のカップを備えていたが、複数のカップが一体に構成されて昇降するものであっても良い。さらに、液受け部４０はスピンベース２１を取り囲む１つのカップのみを備えるものであっても良い。 In each of the above embodiments, the liquid receiving portion includes a plurality of cups that can be moved up and down independently of each other. However, a plurality of cups may be integrally configured to move up and down. Furthermore, the liquid receiving part 40 may be provided with only one cup surrounding the spin base 21.
　また、基板洗浄装置１によって処理対象となる基板は半導体用途の基板に限定されるものではなく、太陽電池用途の基板や液晶表示装置などのフラットパネルディスプレイに用いるガラス基板であっても良い。 Further, the substrate to be processed by the substrate cleaning apparatus 1 is not limited to a substrate for semiconductor use, and may be a glass substrate used for a flat panel display such as a substrate for a solar cell or a liquid crystal display device.
　さらに、基板処理装置１は、スピンチャックに保持した基板を回転させつつ、その表面に処理液を供給し、基板から飛散した処理液をカップによって受け止める装置であれば良く、枚葉式の洗浄処理装置やエッチング処理装置の他に、例えばレジストなどを塗布する回転塗布装置（スピンコータ）や回転現像装置（スピンデベロッパー）であっても良い。 Further, the substrate processing apparatus 1 may be any apparatus that supplies the processing liquid to the surface of the substrate held by the spin chuck and receives the processing liquid scattered from the substrate by the cup. In addition to the apparatus and the etching processing apparatus, for example, a spin coating apparatus (spin coater) or a rotary developing apparatus (spin developer) for applying a resist or the like may be used.
　以上、実施形態およびその変形例に係る基板処理装置について説明したが、これらは本発明に好ましい実施形態の例であって、本発明の実施の範囲を限定するものではない。本発明は、その発明の範囲内において、各実施形態の自由な組み合わせ、あるいは各実施形態の任意の構成要素の変形、もしくは各実施形態において任意の構成要素の省略が可能である。 The substrate processing apparatus according to the embodiment and its modification has been described above, but these are examples of the preferred embodiment of the present invention, and do not limit the scope of implementation of the present invention. Within the scope of the invention, the present invention can be freely combined with each embodiment, modified with any component in each embodiment, or omitted with any component in each embodiment.
　１　基板処理装置
　９　制御部
　２０　スピンチャック
　３１　吐出ヘッド
　４０、４０Ａ、４０Ｙ　液受け部
　４１　回収部
　４１Ａ、４２、４３　カップ
　７０、７０Ａ～７０Ｃ　集液部
　７１、７１Ｂ、７１Ｃ　溝
　７２、７２Ｂ、７２Ｃ　土手部
　Ｗ　基板 DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 9 Control part 20 Spin chuck 31 Discharge head 40, 40A, 40Y Liquid receiving part 41 Recovery part 41A, 42, 43 Cup 70, 70A-70C Liquid collection part 71, 71B, 71C Groove 72, 72B, 72C Bank Part W Substrate

Claims (6)

  1. 　基板を水平に保持する基板保持部と、
    　前記基板保持部に保持された前記基板に向けて処理液を供給する処理液供給部と、
    　前記基板保持部の周囲を取り囲み、前記基板から飛散した前記処理液を受ける液受け部と、
    　前記基板保持部に保持された前記基板の中心を通り鉛直方向に伸びる回転軸を中心として該基板を回転させる基板回転部と、
    を備え、
    　前記液受け部の内周面は前記基板保持部に保持された前記基板側に露出した複数の溝を有し、前記複数の溝のそれぞれの延在方向は鉛直方向の成分を含む、基板処理装置。     A substrate holder for horizontally holding the substrate;
    A processing liquid supply unit that supplies a processing liquid toward the substrate held by the substrate holding unit;
    A liquid receiver that surrounds the periphery of the substrate holder and receives the processing liquid scattered from the substrate;
    A substrate rotating unit for rotating the substrate around a rotation axis extending in a vertical direction through the center of the substrate held by the substrate holding unit;
    With
    The inner peripheral surface of the liquid receiving portion has a plurality of grooves exposed to the substrate held by the substrate holding portion, and each extending direction of the plurality of grooves includes a vertical component. apparatus.
  2. 　請求項１に記載の基板処理装置であって、
    　前記延在方向は、前記基板の回転方向の成分と鉛直下向きの成分とが合成された方向である、基板処理装置。     The substrate processing apparatus according to claim 1,
    The extending direction is a substrate processing apparatus in which a component in a rotation direction of the substrate and a vertically downward component are combined.
  3. 　請求項１または請求項２に記載の基板処理装置であって、
    　前記複数の溝が、前記基板の回転方向の上流側の部分よりも下流側の部分の方が深く窪んでいる溝を含む、基板処理装置。     The substrate processing apparatus according to claim 1 or 2, wherein
    The substrate processing apparatus, wherein the plurality of grooves include a groove in which a downstream portion is deeper than an upstream portion in the rotation direction of the substrate.
  4. 　請求項１から請求項３までのいずれか１つの請求項に記載の基板処理装置であって、
    　前記内周面は、少なくとも前記基板保持部に保持された前記基板と同じ鉛直方向の位置において、前記複数の溝を含む、基板処理装置。     A substrate processing apparatus according to any one of claims 1 to 3, wherein
    The substrate processing apparatus, wherein the inner peripheral surface includes the plurality of grooves at least in the same vertical position as the substrate held by the substrate holding unit.
  5. 　請求項１から請求項４までのいずれか１つの請求項に記載の基板処理装置であって、
    　周方向において、前記内周面は、基準面よりも窪んだ前記複数の溝と、隣り合う溝間に位置し且つ前記基準面に沿う複数の土手部と、を交互に有し、
    　前記基準面に沿う各溝の第１長さは、前記基準面に沿う各土手部の第２長さよりも長い、基板処理装置。     A substrate processing apparatus according to any one of claims 1 to 4, wherein
    In the circumferential direction, the inner peripheral surface alternately includes the plurality of grooves recessed from the reference surface, and a plurality of banks located between adjacent grooves and along the reference surface,
    The substrate processing apparatus, wherein a first length of each groove along the reference surface is longer than a second length of each bank portion along the reference surface.
  6. 　請求項１から請求項５までのいずれか１つの請求項に記載の基板処理装置であって、
    　前記液受け部は、相対的に径が小さく前記基板に近い位置で前記基板保持部の周囲を取り囲む内側のカップから、相対的に径が大きく前記基板から遠い位置で前記基板保持部の周囲を取り囲む外側のカップにかけての複数のカップを有し、
    　少なくとも前記内側のカップの内周面が前記複数の溝を含む、基板処理装置。     A substrate processing apparatus according to any one of claims 1 to 5, wherein
    The liquid receiver has a relatively small diameter and a position close to the substrate, and an inner cup surrounding the periphery of the substrate holder. Having multiple cups over the surrounding outer cup,
    The substrate processing apparatus, wherein at least an inner peripheral surface of the inner cup includes the plurality of grooves.
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