TW201813726A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
TW201813726A
TW201813726A TW106118866A TW106118866A TW201813726A TW 201813726 A TW201813726 A TW 201813726A TW 106118866 A TW106118866 A TW 106118866A TW 106118866 A TW106118866 A TW 106118866A TW 201813726 A TW201813726 A TW 201813726A
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TW
Taiwan
Prior art keywords
substrate
liquid
grooves
cup
processing apparatus
Prior art date
Application number
TW106118866A
Other languages
Chinese (zh)
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TWI644736B (en
Inventor
鈴木達大
德利憲太郎
西村高志
結城嘉曉
玉置康人
宮路信行
平下友美
內田博章
奧谷洋介
Original Assignee
斯庫林集團股份有限公司
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Publication of TW201813726A publication Critical patent/TW201813726A/en
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Publication of TWI644736B publication Critical patent/TWI644736B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

The purpose of the present invention is to provide technology for suppressing the soiling of substrates. A substrate processing device comprises a substrate holding unit for holding a substrate horizontally, a processing liquid supply unit for supplying processing liquid toward the substrate held by the substrate holding unit, and a liquid receiving unit that surrounds the substrate holding unit and receives processing liquid which has splashed off of the substrate. The inner peripheral surface of the liquid receiving unit has a plurality of grooves exposed toward the substrate held by the substrate holding unit, and the direction of extension of the plurality of grooves includes vertical-direction components. As a result, droplets of processing liquid readily collect in the grooves and fall due to the weight of the droplets.

Description

基板處理裝置    Substrate processing device   

本發明係關於對基板供給處理液而對該基板進行處理之技術。 The present invention relates to a technique for processing a substrate by supplying a processing liquid to the substrate.

自過去以來,已知有一邊使基板旋轉,一邊對該基板供給處理液之技術。在此種裝置中,被供給至基板之處理液藉由該基板之旋轉而朝周圍飛散,從而撞擊包圍該基板周圍之液承接部之內周面。撞擊之處理液之大部分雖會沿著該內周面而落下,但存在有撞擊之處理液之一部分會附著於該內周面之情形。 Conventionally, a technique of supplying a processing liquid to a substrate while rotating the substrate is known. In such a device, the processing liquid supplied to the substrate is scattered toward the surroundings by the rotation of the substrate, thereby hitting the inner peripheral surface of the liquid receiving portion surrounding the substrate. Although most of the impacted processing liquid falls along the inner peripheral surface, a part of the impacted processing liquid may adhere to the inner peripheral surface.

若對附著於液承接部之內周面之處理液置之不理,便會有該處理液固化而成為微粒之可能性。又,若對附著於液承接部之內周面之處理液置之不理,在其後之液體處理時,自基板朝向液承接部飛散之新處理液更會撞擊附著於液承接部之內周面之舊處理液,而存在有產生該等處理液朝向基板彈回之現象(亦稱為回濺現象)的可能性。 If the treatment liquid attached to the inner peripheral surface of the liquid receiving portion is left out, there is a possibility that the treatment liquid solidifies and becomes particles. In addition, if the processing liquid attached to the inner peripheral surface of the liquid receiving portion is ignored, the new processing liquid scattered from the substrate toward the liquid receiving portion will hit the inner peripheral surface of the liquid receiving portion during the subsequent liquid processing. The old processing liquid may cause a phenomenon that the processing liquid bounces back toward the substrate (also referred to as a splash back phenomenon).

微粒之產生或回濺現象係污染基板之原因。因此,為了抑制如此之污染,於專利文獻1揭示有在較液承接部之內周面更內側設置網目構件之技術。又,於專利文獻2揭示有在較液承接部之內周面更內側設置PVA(聚乙烯醇;polyvinyl alcohol)海綿等之親水性構件之技術。 The generation of particles or back splashing is the cause of contaminating the substrate. Therefore, in order to suppress such contamination, Patent Document 1 discloses a technique in which a mesh member is provided on the inner side than the inner peripheral surface of the liquid receiving portion. Further, Patent Document 2 discloses a technique in which a hydrophilic member such as a PVA (polyvinyl alcohol) sponge is provided on the inner side than the inner peripheral surface of the liquid receiving portion.

[先前技術文獻]     [Prior technical literature]     [專利文獻]     [Patent Literature]    

[專利文獻1]日本專利特開2014-207320號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2014-207320

[專利文獻2]日本專利特開2010-149003號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2010-149003

然而,對於抑制起因於附著在液承接部之內周面之處理液所導致基板污染之情形的技術來說,尚有改善的空間。 However, there is still room for improvement in the technology for suppressing the contamination of the substrate caused by the processing liquid attached to the inner peripheral surface of the liquid receiving portion.

本發明係鑑於前述之問題所完成者,目的在於提供可抑制基板污染之技術。 The present invention has been made in view of the foregoing problems, and an object thereof is to provide a technique capable of suppressing contamination of a substrate.

為了解決前述之問題,第1態樣之基板處理裝置具備有:基板保持部,其水平地保持基板;處理液供給部,其供給處理液至朝向被保持於上述基板保持部之上述基板;液承接部,其包圍上述基板保持部之周圍,承接自上述基板所飛散之上述處理液;及基板旋轉部,其使上述基板,以通過被保持於上述基板保持部之上述基板之中心而朝鉛垂方向延伸之旋轉軸為中心進行旋轉;上述液承接部之內周面具有朝被保持在上述基板保持部之上述基板側露出之複數個溝,且上述複數個溝各自之延伸方向包含鉛垂方向之成分。 In order to solve the aforementioned problems, the substrate processing apparatus of the first aspect includes a substrate holding unit that horizontally holds the substrate, and a processing liquid supply unit that supplies the processing liquid toward the substrate held by the substrate holding unit; A receiving portion surrounds the periphery of the substrate holding portion and receives the processing liquid scattered from the substrate; and a substrate rotating portion causes the substrate to lead toward the lead through the center of the substrate held by the substrate holding portion. A rotation axis extending in the vertical direction is rotated as a center; the inner peripheral surface of the liquid receiving portion has a plurality of grooves exposed toward the substrate side held by the substrate holding portion, and each of the plurality of grooves includes a vertical direction The components of direction.

第2態樣之基板處理裝置係第1態樣之基板處理裝置,其中,上述延伸方向係將上述基板之旋轉方向之成分與鉛垂向下之成分加以合成之方向。 The substrate processing apparatus of the second aspect is the substrate processing apparatus of the first aspect, wherein the extending direction is a direction in which a component in a rotation direction of the substrate and a component in a vertical direction are combined.

第3態樣之基板處理裝置係第1或第2態樣之基板處理裝置,其中,上述複數個溝包含上述基板旋轉方向之下游側部分相較於上游側部分凹陷更深之溝。 The substrate processing apparatus of the third aspect is the substrate processing apparatus of the first or second aspect, wherein the plurality of grooves include a groove deeper in the downstream portion of the substrate rotation direction than the upstream portion.

第4態樣之基板處理裝置係第1態樣之基板處理裝置,其中,上述內周面至少在與被保持於上述基板保持部之上述基板相同鉛垂方向之位置包含上述複數個溝。 The substrate processing apparatus of the fourth aspect is the substrate processing apparatus of the first aspect, wherein the inner peripheral surface includes the plurality of grooves at least in a position perpendicular to the substrate held by the substrate holding portion.

第5態樣之基板處理裝置係第1態樣之基板處理裝置,其中,於圓周方向上,上述內周面交互地具有較基準面更凹陷之上述複數個溝;及位於相鄰之溝間且沿著上述基準面之複數個堤埂部,且沿著上述基準面之各溝之第1長度,較沿著上述基準面之各堤埂部之第2長度長。 The substrate processing apparatus of the fifth aspect is the substrate processing apparatus of the first aspect, wherein, in the circumferential direction, the inner peripheral surface alternately has the plurality of grooves which are more depressed than the reference surface; and located between adjacent grooves. And the first length of the plurality of bank portions along the reference plane, and the first length of each groove along the reference plane is longer than the second length of each bank portion along the reference plane.

第6態樣之基板處理裝置係第1至第5態樣中任一態樣之基板處理裝置,其中,上述液承接部具有涵蓋從直徑相對較小且在與上述基板較近之位置包圍上述基板保持部之周圍之內側的杯部,到直徑相對較大且在與上述基板較遠之位置包圍上述基板保持部之周圍之外側的杯部之複數個杯部,且至少上述內側的杯部之內周面包含有上述複數個溝。 The substrate processing apparatus according to the sixth aspect is the substrate processing apparatus according to any one of the first to fifth aspects, wherein the liquid receiving portion has a diameter that is relatively small and surrounds the substrate at a position closer to the substrate. A plurality of cup portions having a relatively large diameter and a cup portion on the inner side surrounding the substrate holding portion and surrounding the cup portion on the outer side of the substrate holding portion at a distance from the substrate, and at least the inner cup portion The inner bread contains the plurality of grooves.

在第1至第6態樣之基板處理裝置中,可抑制基板因附著在液承接部之內周面之處理液而被污染之情形。 In the substrate processing apparatuses of the first to sixth aspects, it is possible to prevent the substrate from being contaminated by the processing liquid adhered to the inner peripheral surface of the liquid receiving portion.

1、1A‧‧‧基板處理裝置 1. 1A‧‧‧ substrate processing equipment

9‧‧‧控制部 9‧‧‧ Control Department

10‧‧‧腔室 10‧‧‧ chamber

11‧‧‧側壁 11‧‧‧ sidewall

12‧‧‧頂壁 12‧‧‧ top wall

13‧‧‧底壁 13‧‧‧ bottom wall

14‧‧‧風扇過濾器單元 14‧‧‧fan filter unit

15‧‧‧區隔板 15‧‧‧ partition

18‧‧‧排氣管 18‧‧‧ exhaust pipe

20‧‧‧旋轉夾盤 20‧‧‧Rotary chuck

21‧‧‧旋轉基座 21‧‧‧Swivel base

21a‧‧‧基座面 21a‧‧‧ base surface

22‧‧‧旋轉馬達 22‧‧‧Rotary motor

23‧‧‧遮蔽構件 23‧‧‧shielding member

24‧‧‧旋轉軸 24‧‧‧Rotary shaft

25‧‧‧鍔狀構件 25‧‧‧ 锷 -shaped member

26‧‧‧夾盤銷 26‧‧‧Chuck pin

28‧‧‧下表面處理液噴嘴 28‧‧‧ lower surface treatment liquid nozzle

30‧‧‧上表面處理液噴嘴 30‧‧‧ Upper surface treatment liquid nozzle

31‧‧‧吐出頭 31‧‧‧ spit out his head

32‧‧‧噴嘴臂 32‧‧‧ Nozzle Arm

33‧‧‧噴嘴基台 33‧‧‧Nozzle Abutment

40、40A、40Y‧‧‧液承接部 40, 40A, 40Y‧‧‧Liquid receiving department

41‧‧‧回收部 41‧‧‧Recycling Department

41A、42、43‧‧‧杯 41A, 42, 43‧‧‧ cups

43a‧‧‧下端部 43a‧‧‧ lower end

43b‧‧‧上端部 43b‧‧‧upper end

43c‧‧‧折返部 43c‧‧‧Return Department

43d‧‧‧外側上表面 43d‧‧‧Outer upper surface

44‧‧‧底部 44‧‧‧ bottom

45‧‧‧內壁部 45‧‧‧Inner wall

46‧‧‧外壁部 46‧‧‧outer wall

47‧‧‧導引部 47‧‧‧Guide

47b‧‧‧上端部 47b‧‧‧upper end

48‧‧‧中壁部 48‧‧‧ middle wall

49‧‧‧廢棄溝 49‧‧‧ Abandoned Ditch

50‧‧‧內側回收溝 50‧‧‧ inside recovery groove

51‧‧‧外側回收溝 51‧‧‧ Outer recovery trench

52‧‧‧導引部 52‧‧‧Guide

52a‧‧‧下端部 52a‧‧‧ lower end

52b‧‧‧上端部 52b‧‧‧upper

52c‧‧‧折返部 52c‧‧‧Return Department

53‧‧‧處理液分離壁 53‧‧‧ treatment liquid separation wall

60‧‧‧二流體噴嘴 60‧‧‧Two-fluid nozzle

62‧‧‧噴嘴臂 62‧‧‧Nozzle arm

63‧‧‧噴嘴基台 63‧‧‧Nozzle Abutment

64‧‧‧氣體頭 64‧‧‧Gas head

70、70A~70C‧‧‧集液部 70, 70A ~ 70C‧‧‧collection department

71、71B、71C‧‧‧溝 71, 71B, 71C‧‧‧ trench

72、72B、72C‧‧‧堤埂部 72, 72B, 72C‧‧‧ Embankment

75、75A、75C‧‧‧內周面 75, 75A, 75C‧‧‧Inner peripheral surface

76‧‧‧基準面 76‧‧‧ datum

101、102、103‧‧‧液滴 101, 102, 103‧‧‧ droplets

CX‧‧‧旋轉軸 CX‧‧‧rotation axis

d1‧‧‧第1長度 d1‧‧‧first length

d2‧‧‧第2長度 d2‧‧‧2nd length

W‧‧‧基板 W‧‧‧ substrate

圖1係基板處理裝置1之俯視圖。 FIG. 1 is a plan view of the substrate processing apparatus 1.

圖2係基板處理裝置1之縱剖視圖。 FIG. 2 is a longitudinal sectional view of the substrate processing apparatus 1.

圖3係顯示集液部70之水平剖面之剖視圖。 FIG. 3 is a cross-sectional view showing a horizontal section of the liquid collecting portion 70.

圖4係自內側(旋轉軸CX側)所觀察集液部70之側視圖。 FIG. 4 is a side view of the liquid collecting portion 70 as viewed from the inside (the rotation axis CX side).

圖5係顯示藥液處理及純水沖洗處理之情況之基板處理裝置1之局部放大圖。 FIG. 5 is a partial enlarged view of the substrate processing apparatus 1 showing the conditions of the chemical liquid processing and the pure water rinsing processing.

圖6係顯示IPA處理之情況之基板處理裝置1之局部放大圖。 FIG. 6 is a partial enlarged view of the substrate processing apparatus 1 showing the state of the IPA processing.

圖7係顯示比較例中藥液處理之情況之圖。 Fig. 7 is a diagram showing the treatment of a chemical solution in a comparative example.

圖8係示意地表示於比較例中處理液之液滴101、102移動之情況之橫剖視圖。 FIG. 8 is a cross-sectional view schematically showing a state in which droplets 101 and 102 of a treatment liquid move in a comparative example.

圖9係示意地表示處理液之液滴101~103移動之情況之橫剖視圖。 FIG. 9 is a cross-sectional view schematically showing a state in which droplets 101 to 103 of the processing liquid are moved.

圖10係比較例之回濺現象之檢查結果。 FIG. 10 is a result of inspection of a backlash phenomenon of a comparative example.

圖11係本實施形態之回濺現象之檢查結果。 FIG. 11 is an inspection result of the splash back phenomenon in this embodiment.

圖12係顯示第2實施形態之基板處理裝置1A之剖視圖。 Fig. 12 is a sectional view showing a substrate processing apparatus 1A according to a second embodiment.

圖13係第2實施形態之回濺現象之檢查結果。 Fig. 13 is a result of inspection of a splash-back phenomenon in the second embodiment.

圖14係示意地表示變形例中處理液之液滴101~103移動之情況之橫剖視圖。 FIG. 14 is a cross-sectional view schematically showing a state in which droplets 101 to 103 of a processing liquid are moved in a modification.

圖15係於變形例中自內側(旋轉軸CX側)所觀察集液部70C之側視圖。 FIG. 15 is a side view of the liquid collecting portion 70C viewed from the inside (the axis of rotation CX) in the modification.

圖16係各溝71C之第1長度為8mm且各堤埂部72C之第2長度為1mm之情形之回濺現象之檢查結果。 FIG. 16 is an inspection result of the splash back phenomenon in the case where the first length of each groove 71C is 8 mm and the second length of each bank portion 72C is 1 mm.

圖17係各溝71C之第1長度為4mm且各堤埂部72C之第2長度為1mm之情形之回濺現象之檢查結果。 FIG. 17 is an inspection result of the splash back phenomenon in the case where the first length of each groove 71C is 4 mm and the second length of each bank portion 72C is 1 mm.

圖18係各溝71C之第1長度為2mm且各堤埂部72C之第2長度為1mm之情形之回濺現象之檢查結果。 FIG. 18 is an inspection result of the splash back phenomenon in the case where the first length of each groove 71C is 2 mm and the second length of each bank portion 72C is 1 mm.

圖19係將回濺現象之複數個檢查結果加以匯整之表。 FIG. 19 is a table summarizing a plurality of inspection results of the splash back phenomenon.

以下,一邊參照圖式一邊對本發明之實施形態詳細地進行說明。再者,於圖1及其後之各圖中,為了容易理解,而根據需要誇張或簡化地描述各部的尺寸與數量。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Furthermore, in the drawings of FIG. 1 and the subsequent figures, for easy understanding, the size and number of each part are exaggerated or simplified as needed.

<1 第1實施形態>     <1 First Embodiment>     <1.1 基板處理裝置1之構成>     <1.1 Configuration of Substrate Processing Device 1>    

圖1係第1實施形態之基板處理裝置1之俯視圖。又,圖2係基板處理裝置1之縱剖視圖。該基板處理裝置1係一次一片地處理半導體用途之基板W之單片式處理裝置,其對圓形之矽基板W進行藥液處理及使用純水等之沖洗液之沖洗處理後進行乾燥處理。更具體而言,其係在對基板W供給SC1液體(氨水過氧化氫水混合液)、DHF液體(稀釋氫氟酸)、SC2液體(鹽酸過氧化氫水混合液)等之藥液而對基板W進行洗淨處理(藥液處理)後,使用沖洗液進行沖洗處理而自基板W上除去藥液,並於最後進行基板W之乾燥處理之單片式基板洗淨裝置。再者,圖1係顯示基板W被保持於旋轉夾盤20之狀態,而圖2係顯示基板W被保持於旋轉夾盤20之狀態。 Fig. 1 is a plan view of a substrate processing apparatus 1 according to a first embodiment. FIG. 2 is a longitudinal sectional view of the substrate processing apparatus 1. This substrate processing apparatus 1 is a single-chip processing apparatus that processes substrates W for semiconductor use one sheet at a time, and performs a chemical treatment on a circular silicon substrate W and a rinse treatment using a rinse solution such as pure water, followed by drying treatment. More specifically, it is used to supply a chemical liquid such as SC1 liquid (aqueous hydrogen peroxide water mixed liquid), DHF liquid (diluted hydrofluoric acid), SC2 liquid (hydrogen hydrogen peroxide water mixed liquid) and the like to the substrate W. After the substrate W is subjected to a cleaning process (chemical solution treatment), the substrate W is rinsed using a rinse solution to remove the chemical solution from the substrate W, and the substrate W is finally subjected to a drying process of the substrate W. Further, FIG. 1 shows a state where the substrate W is held on the spin chuck 20, and FIG. 2 shows a state where the substrate W is held on the spin chuck 20.

基板處理裝置1係於腔室10內,作為主要元件而具備有:旋轉夾盤20,其將基板W保持為水平姿勢(法線沿著鉛垂方向之姿勢);上表面處理液噴嘴30,其用以對被保持於旋轉夾盤20之基板W之上表面供給處理液;及液承接部40,其包圍旋轉夾盤20之周圍而承接自基板W所飛散之處理液。又,於腔室10內之液 承接部40周圍,設置有將腔室10之內側空間區隔為上下之區隔板15。再者,於本說明書中,處理液係包含藥液、清洗液及洗淨液全部之總稱。 The substrate processing apparatus 1 is provided in the chamber 10 and includes, as main components, a rotary chuck 20 that holds the substrate W in a horizontal posture (a posture in which a normal line is in a vertical direction), and an upper surface treatment liquid nozzle 30, It is used to supply a processing liquid to the upper surface of the substrate W held on the spin chuck 20; and a liquid receiving portion 40 that surrounds the periphery of the spin chuck 20 and receives the processing liquid scattered from the substrate W. Further, around the liquid receiving portion 40 in the chamber 10, a partition plate 15 for partitioning the inner space of the chamber 10 into upper and lower portions is provided. In addition, in this specification, a processing liquid is a general term which includes all the chemical liquid, a washing liquid, and a washing liquid.

腔室10具備有:沿著鉛垂方向之側壁11、將由側壁11所包圍之空間之上側封閉之頂壁12、及將下側封閉之底壁13。由側壁11、頂壁12及底壁13所包圍之空間成為基板W之處理空間。又,於腔室10之側壁11之一部分,設置有用以對腔室10搬出搬入基板W之搬出入口及將該搬出入口加以開閉之擋門(均省略圖示)。 The chamber 10 includes a side wall 11 along the vertical direction, a top wall 12 that closes the upper side of the space surrounded by the side wall 11, and a bottom wall 13 that closes the lower side. The space surrounded by the side wall 11, the top wall 12, and the bottom wall 13 becomes a processing space for the substrate W. Further, a part of the side wall 11 of the chamber 10 is provided with a door (both not shown) for carrying in and out of the substrate 10 and carrying the substrate W in and out of the chamber 10.

於腔室10之頂壁12安裝有風扇過濾器單元(FFU)14,該風扇過濾器單元14係用以將設置有基板處理裝置1之無塵室內之空氣進一步潔淨化並供給至腔室10內之處理空間。風扇過濾器單元14具備有用以將無塵室內之空氣引入且送出至腔室10內之風扇及過濾器(例如HEPA過濾器(High-Efficiency Particulate Air Filter;高效率空氣微粒子過濾器)),並於腔室10內之處理空間形成潔淨空氣之下降流。為了均勻地分散自風扇過濾器單元14所供給之潔淨空氣,亦可將穿設有多個吹氣孔之衝孔板設置於頂壁12之正下方。 A fan filter unit (FFU) 14 is installed on the top wall 12 of the chamber 10. The fan filter unit 14 is used to further clean and supply the air in the clean room provided with the substrate processing apparatus 1 to the chamber 10. Within the processing space. The fan filter unit 14 includes a fan and a filter (for example, a HEPA filter (High-Efficiency Particulate Air Filter)) for introducing and sending air from the clean room into the chamber 10, and A downward flow of clean air is formed in the processing space in the chamber 10. In order to uniformly disperse the clean air supplied from the fan filter unit 14, a punching plate penetrating with a plurality of blow holes can also be disposed directly below the top wall 12.

旋轉夾盤20具備有在沿著鉛垂方向延伸之旋轉軸24之上端以水平姿勢被固定之圓板形狀之旋轉基座21。於旋轉基座21之下方設置有使旋轉軸24旋轉之旋轉馬達22。旋轉馬達22經由旋轉軸24使旋轉基座21於水平面內旋轉。又,以包圍旋轉馬達22及旋轉軸24之周圍之方式、設置有筒狀之遮蔽構件23。 The rotary chuck 20 includes a rotary base 21 having a circular plate shape fixed at an upper end of a rotary shaft 24 extending in a vertical direction in a horizontal posture. A rotary motor 22 is provided below the rotary base 21 to rotate the rotary shaft 24. The rotation motor 22 rotates the rotation base 21 in a horizontal plane via a rotation shaft 24. A cylindrical shielding member 23 is provided so as to surround the periphery of the rotation motor 22 and the rotation shaft 24.

圓板形狀之旋轉基座21之外徑,較被保持於旋轉夾 盤20之圓形基板W之直徑略大。因此,旋轉基座21具有與應保持之基板W之下表面整體相對向之平坦之圓形的基座面21a。 The outer diameter of the circular plate-shaped rotary base 21 is slightly larger than the diameter of the circular substrate W held on the rotary chuck 20. Therefore, the rotary base 21 has a flat base surface 21a that is flat and faces the entire lower surface of the substrate W to be held.

於旋轉基座21之基座面21a之周緣部,立設有複數根(本實施形態中為4根)夾盤銷26。複數個夾盤銷26係沿著與圓形基板W之外周圓對應之圓周上,隔著均等之間隔(如本實施形態般若為4個夾盤銷26,則間隔90°)而被配置。複數個夾盤銷26係藉由被收容於旋轉基座21之省略圖示之連結機構連動地被驅動。旋轉夾盤20藉由使複數個夾盤銷26分別抵接於基板W之外周端而把持基板W,藉此可在旋轉基座21之上方以與基座面21a隔著既定間隔之水平姿勢保持該基板W(參照圖2),並且可使複數個夾盤銷26分別自基板W外周端離開而將把持加以解除。 A plurality of (four in this embodiment) chuck pins 26 are erected on the peripheral edge portion of the base surface 21a of the rotation base 21. The plurality of chuck pins 26 are arranged along the circumference corresponding to the outer periphery of the circular substrate W at equal intervals (as in the present embodiment, four chuck pins 26 are spaced at 90 °). The plurality of chuck pins 26 are driven in conjunction with a link mechanism (not shown) housed in the rotation base 21. The rotary chuck 20 holds the substrate W by abutting a plurality of chuck pins 26 on the outer peripheral ends of the substrate W, thereby allowing the rotary chuck 20 to be positioned horizontally above the rotary base 21 at a predetermined interval from the base surface 21a. While holding the substrate W (see FIG. 2), the plurality of chuck pins 26 can be separated from the outer peripheral end of the substrate W to release the grip.

覆蓋旋轉馬達22之遮蔽構件23,其下端被固定於腔室10之底壁13,而上端到達旋轉基座21之正下方。於遮蔽構件23之上端部,設置有自遮蔽構件23朝外側大致水平地突出且進一步朝下方彎曲而延伸之鍔狀構件25。在旋轉夾盤20利用複數根夾盤銷26來把持而將基板W加以保持之狀態下,藉由旋轉馬達22使旋轉軸24旋轉,可使基板W繞通過基板W之中心且沿著鉛垂方向之旋轉軸CX進行旋轉。再者,旋轉馬達22之驅動係藉由控制部9所控制。如此,旋轉夾盤20係作為將基板W水平地加以保持之基板保持手段而發揮功能。又,旋轉馬達22係作為使被保持於旋轉夾盤20之基板W以旋轉軸CX為中心進行旋轉之基板旋轉部而發揮功能。 The lower end of the shielding member 23 covering the rotary motor 22 is fixed to the bottom wall 13 of the chamber 10, and the upper end reaches directly below the rotary base 21. On the upper end portion of the shielding member 23, a cymbal member 25 is provided which protrudes substantially horizontally from the shielding member 23 to the outside and further bends and extends downward. In a state where the rotary chuck 20 is held by a plurality of chuck pins 26 to hold the substrate W, the rotary shaft 24 is rotated by the rotary motor 22, so that the substrate W can pass through the center of the substrate W and along the vertical direction. The direction of rotation axis CX rotates. The driving system of the rotary motor 22 is controlled by the control unit 9. As described above, the spin chuck 20 functions as a substrate holding means that holds the substrate W horizontally. The rotation motor 22 functions as a substrate rotation unit that rotates the substrate W held on the spin chuck 20 around the rotation axis CX.

上表面處理液噴嘴30係將吐出頭31安裝於噴嘴臂32之前端而構成。噴嘴臂32之基端側係固定而被連結於噴嘴基台 33。噴嘴基台33係設為可藉由省略圖示之馬達繞沿著鉛垂方向之軸進行轉動。藉由噴嘴基台33進行轉動,上表面處理液噴嘴30之吐出頭31在旋轉夾盤20之上方之處理位置與較液承接部40更外側之待機位置之間,沿著水平方向呈圓弧狀地進行移動。以複數種處理液(至少包含純水)被供給至上表面處理液噴嘴30之方式所構成。於處理位置,自上表面處理液噴嘴30之吐出頭31所吐出之處理液,著液於被保持在旋轉夾盤20之基板W之上表面。又,藉由噴嘴基台33之轉動,上表面處理液噴嘴30係設為可於旋轉基座21之基座面21a之上方擺動。 The upper surface treatment liquid nozzle 30 is configured by attaching the discharge head 31 to the front end of the nozzle arm 32. The base end side of the nozzle arm 32 is fixed and connected to the nozzle base 33. The nozzle base 33 is configured to be rotatable around an axis in the vertical direction by a motor (not shown). By the rotation of the nozzle base 33, the processing position of the ejection head 31 of the upper surface treatment liquid nozzle 30 above the rotary chuck 20 and the standby position further outside than the liquid receiving part 40 are in an arc in the horizontal direction. To move like this. A plurality of types of processing liquid (including at least pure water) are supplied to the upper surface processing liquid nozzle 30. At the processing position, the processing liquid discharged from the discharge head 31 of the upper surface processing liquid nozzle 30 is deposited on the upper surface of the substrate W held on the spin chuck 20. In addition, by the rotation of the nozzle base 33, the upper surface treatment liquid nozzle 30 is configured to be swingable above the base surface 21a of the rotary base 21.

另一方面,以插通旋轉軸24之內側之方式,沿著鉛垂方向設置有下表面處理液噴嘴28。下表面處理液噴嘴28之上端開口係形成在與被保持於旋轉夾盤20之基板W下表面中央相對向之位置。以複數種處理液亦被供給至下表面處理液噴嘴28之方式所構成。自下表面處理液噴嘴28所吐出之處理液,著液於被保持在旋轉夾盤20之基板W之下表面。 On the other hand, a lower surface treatment liquid nozzle 28 is provided in the vertical direction so as to pass through the inside of the rotation shaft 24. The upper end opening of the lower surface treatment liquid nozzle 28 is formed at a position facing the center of the lower surface of the substrate W held on the spin chuck 20. A plurality of types of processing liquid are also configured to be supplied to the lower surface processing liquid nozzle 28. The processing liquid discharged from the lower surface processing liquid nozzle 28 is deposited on the lower surface of the substrate W held on the spin chuck 20.

又,在基板處理裝置1,有別於上表面處理液噴嘴30地設置有二流體噴嘴60。二流體噴嘴60係將純水等之處理液與經加壓之氣體加以混合而生成液滴,並將該液滴與氣體之混合流體(二流體)噴射至基板W之噴嘴。二流體噴嘴60係將省略圖示之液體頭安裝於噴嘴臂62之前端,並且將氣體頭64安裝於以自噴嘴臂62分歧之方式所設置之支撐構件而構成。噴嘴臂62之基端側係固定而被連結於噴嘴基台63。噴嘴基台63係設為可藉由省略圖示之馬達繞沿著鉛垂方向之軸進行轉動。藉由噴嘴基台63進行轉動,二流體噴嘴60在旋轉夾盤20上方之處理位置與較液承接部40更 外側之待機位置之間沿著水平方向呈圓弧狀地移動。純水等之處理液被供給至液體頭,經加壓之惰性氣體(本實施形態中為氮氣(N2))被供給至氣體頭64。在處理位置,自二流體噴嘴60所噴出之處理液之混合流體,被吹抵於被保持在旋轉夾盤20之基板W之上表面。如此,下表面處理液噴嘴28、上表面處理液噴嘴30、及二流體噴嘴60係作為分別朝向被保持在旋轉夾盤20之基板W供給處理液之處理液供給部而發揮功能。 The substrate processing apparatus 1 is provided with a two-fluid nozzle 60 different from the upper surface treatment liquid nozzle 30. The two-fluid nozzle 60 is a nozzle that mixes a processing liquid such as pure water with a pressurized gas to generate a liquid droplet, and sprays a mixed fluid (two-fluid) of the liquid droplet and the gas onto the substrate W. The two-fluid nozzle 60 is configured by attaching a liquid head (not shown) to the front end of the nozzle arm 62 and attaching the gas head 64 to a support member provided so as to diverge from the nozzle arm 62. The proximal end side of the nozzle arm 62 is fixed and connected to the nozzle base 63. The nozzle base 63 is configured to be rotatable around an axis in the vertical direction by a motor (not shown). When the nozzle base 63 rotates, the two-fluid nozzle 60 moves in a circular arc shape in a horizontal direction between a processing position above the rotary chuck 20 and a standby position further outside than the liquid receiving portion 40. A processing liquid such as pure water is supplied to the liquid head, and a pressurized inert gas (nitrogen (N2) in the present embodiment) is supplied to the gas head 64. At the processing position, the mixed fluid of the processing liquid sprayed from the two-fluid nozzle 60 is blown against the upper surface of the substrate W held on the spin chuck 20. In this way, the lower surface processing liquid nozzle 28, the upper surface processing liquid nozzle 30, and the two-fluid nozzle 60 function as processing liquid supply sections that supply processing liquid toward the substrate W held on the spin chuck 20, respectively.

液承接部40具備有可相互獨立地進行升降之回收部41及杯42、43。回收部41包圍旋轉夾盤20之周圍,具有相對於通過被保持在旋轉夾盤20之基板W之中心之旋轉軸CX大致呈旋轉對稱之形狀。該回收部41一體地具備有俯視時呈圓環狀之底部44、自底部44之內周緣朝上方立起之圓筒狀之內壁部45、自底部44之外周緣朝上方立起之圓筒狀之外壁部46、及自內壁部45與外壁部46之間朝上方立起之圓筒狀之中壁部48。 The liquid receiving section 40 includes a recovery section 41 and cups 42 and 43 that can be raised and lowered independently of each other. The recovery portion 41 surrounds the periphery of the spin chuck 20 and has a shape that is substantially rotationally symmetric with respect to a rotation axis CX passing through the center of the substrate W held by the spin chuck 20. The recovery portion 41 is integrally provided with a bottom portion 44 which is annular in a plan view, a cylindrical inner wall portion 45 rising upward from an inner peripheral edge of the bottom portion 44 and a circle rising upward from an outer peripheral edge of the bottom portion 44. A cylindrical outer wall portion 46 and a cylindrical middle wall portion 48 standing upward from between the inner wall portion 45 and the outer wall portion 46.

內壁部45係形成為於回收部41被升至最高之狀態下,在與遮蔽構件23和鍔狀構件25之間保持適當之間隙地被收容之長度。中壁部48係形成為於回收部41與杯42最接近之狀態下,在與杯42之後述之導引部52和處理液分離壁53之間保持適當之間隙地被收容之長度。 The inner wall portion 45 is formed in such a length as to be accommodated in a state where the recovery portion 41 is raised to the highest level with a proper gap between the shielding member 23 and the cymbal member 25. The middle wall portion 48 is formed in a length that is accommodated in a state where the recovery portion 41 and the cup 42 are closest to each other, and maintains an appropriate gap between the guide portion 52 and the processing liquid separation wall 53 described later in the cup 42.

內壁部45與中壁部48之間,係設為用以收集並廢棄使用完畢之處理液之廢棄溝49。又,中壁部48與外壁部46之間,係設為用以收集並回收使用完畢之處理液之圓環狀之外側回收溝51。 Between the inner wall portion 45 and the middle wall portion 48, a waste channel 49 is provided for collecting and discarding the used processing liquid. In addition, between the middle wall portion 48 and the outer wall portion 46, a ring-shaped outer side recovery groove 51 for collecting and recovering the used processing liquid is provided.

於廢棄溝49連接有用以將被收集至該廢棄溝49之處 理液排出並且將廢棄溝49內強制性地進行排氣之省略圖示之排氣液機構。排氣液機構例如沿著廢棄溝49之圓周方向等間隔地設置有4個。又,於外側回收溝51連接有用以將被收集至外側回收溝51之處理液回收至被設於基板處理裝置1之外部之回收槽之回收機構(省略圖示)。再者,外側回收溝51之底部相對於水平方向僅傾斜微小角度,且於其最低之位置連接有回收機構。藉此,可使流入外側回收溝51之處理液被平順地回收。 A waste liquid mechanism (not shown) is connected to the waste ditch 49 for discharging the liquid collected in the waste ditch 49 and forcibly exhausting the waste ditch 49. There are four exhaust liquid mechanisms provided at regular intervals along the circumferential direction of the waste trench 49, for example. A recovery mechanism (not shown) is connected to the outer recovery trench 51 for recovering the processing liquid collected in the outer recovery trench 51 to a recovery tank provided outside the substrate processing apparatus 1. Furthermore, the bottom of the outer recovery groove 51 is inclined at a slight angle with respect to the horizontal direction, and a recovery mechanism is connected to its lowest position. Thereby, the processing liquid flowing into the outer recovery groove 51 can be smoothly recovered.

杯42包圍旋轉夾盤20之周圍,具有相對於通過被保持在旋轉夾盤20之基板W之中心之旋轉軸CX大致呈旋轉對稱之形狀。該杯42一體地具備有導引部52、及被連結於該導引部52之圓筒狀之處理液分離壁53。 The cup 42 surrounds the circumference of the spin chuck 20 and has a shape that is substantially rotationally symmetric with respect to a rotation axis CX passing through the center of the substrate W held by the spin chuck 20. The cup 42 is integrally provided with a guide portion 52 and a cylindrical treatment liquid separation wall 53 connected to the guide portion 52.

導引部52於回收部41之中壁部48內側,具有與中壁部48之下端部呈同軸圓筒狀之下端部52a、一邊自下端部52a之上端描繪平滑之圓弧一邊朝中心側(靠近基板W之旋轉軸CX之方向)斜上方延伸之上端部52b、及將上端部52b之前端部朝下方折返所形成之折返部52c。下端部52a係於回收部41與杯42最接近之狀態下,在與內壁部45和中壁部48之間保持適當之間隙地被收容於廢棄溝49內。 The guide portion 52 has a lower end portion 52a coaxial with the lower end portion of the middle wall portion 48 inside the middle wall portion 48 of the recovery portion 41, and draws a smooth arc from the upper end of the lower end portion 52a toward the center side. (In the direction close to the rotation axis CX of the substrate W) The upper end portion 52b extends obliquely upward, and the folded-back portion 52c formed by folding the front end portion of the upper end portion 52b downward. The lower end portion 52 a is accommodated in the waste trench 49 while maintaining a proper gap between the recovery portion 41 and the cup 42, and the inner wall portion 45 and the middle wall portion 48.

又,導引部52之上端部52b係形成為越朝下方厚度越厚,且處理液分離壁53具有被設置為自上端部52b之下端外周緣部朝下方延伸之圓筒形狀。處理液分離壁53係於回收部41與杯42最接近之狀態下,在與中壁部48和杯43之間保持適當之間隙地被收容於外側回收溝51內。 The upper end portion 52b of the guide portion 52 is formed to be thicker as it goes downward, and the treatment liquid separation wall 53 has a cylindrical shape provided to extend downward from the outer peripheral edge portion of the lower end of the upper end portion 52b. The treatment liquid separation wall 53 is accommodated in the outer recovery groove 51 while maintaining an appropriate gap between the recovery portion 41 and the cup 42 in a state where the recovery portion 41 is closest to the cup 42.

杯43於杯42之導引部52之外側包圍旋轉夾盤20之 周圍,且具有相對於通過被保持在旋轉夾盤20之基板W之中心之旋轉軸CX大致呈旋轉對稱之形狀。該杯43具有作為導引部之功能。杯43具有與導引部52之下端部52a呈同軸圓筒狀之下端部43a、一邊自下端部43a之上端描繪平滑之圓弧一邊朝中心側(靠近基板W之旋轉軸CX之方向)斜上方延伸之上端部43b、及將上端部43b之前端部朝下方折返所形成之折返部43c。 The cup 43 surrounds the rotation chuck 20 on the outer side of the guide portion 52 of the cup 42 and has a substantially rotationally symmetrical shape with respect to a rotation axis CX passing through the center of the substrate W of the rotation chuck 20. The cup 43 has a function as a guide. The cup 43 has a lower cylindrical end portion 43a coaxial with the lower end portion 52a of the guide portion 52, and is slanted toward the center side (close to the rotation axis CX of the substrate W) while drawing a smooth arc from the upper end of the lower end portion 43a. The upper end portion 43b is extended upward, and the folded-back portion 43c is formed by folding the front end portion of the upper end portion 43b downward.

下端部43a係於回收部41與杯43最接近之狀態下,在與杯42之處理液分離壁53和回收部41之外壁部46之間保持適當之間隙地被收容於外側回收溝51內。又,上端部43b係設置為與杯42之導引部52在上下方向上重疊,並在杯42與杯43最接近之狀態下,保持極微小之間隔地接近於導引部52之上端部52b。此外,將上端部43b之前端部朝下方折返所形成之折返部43c係形成為於杯42與杯43最接近之狀態下,折返部43c與導引部52之折返部52c在水平方向上重疊。 The lower end portion 43 a is accommodated in the outer recovery groove 51 with an appropriate gap between the recovery portion 41 and the cup 43 in a state closest to the treatment liquid separation wall 53 of the cup 42 and the outer wall portion 46 of the recovery portion 41. . In addition, the upper end portion 43b is provided so as to overlap the guide portion 52 of the cup 42 in the up-down direction, and is close to the upper end portion of the guide portion 52 at a very small interval in a state where the cup 42 and the cup 43 are closest to each other. 52b. In addition, the folded-back portion 43c formed by folding the front end portion of the upper end portion 43b downward is formed in a state where the cup 42 and the cup 43 are closest to each other, and the folded-back portion 43c and the folded-back portion 52c of the guide portion 52 overlap in the horizontal direction. .

回收部41及杯42、43係設為可相互獨立地升降。亦即,於回收部41及杯42、43分別設置有個別之升降機構(省略圖示),藉此可個別獨立地被升降。作為如此之升降機構,例如可採用滾珠螺桿機構或汽缸等周知之各種機構。 The recovery unit 41 and the cups 42 and 43 are raised and lowered independently of each other. That is, each of the recovery units 41 and the cups 42 and 43 is provided with a separate lifting mechanism (not shown), so that it can be lifted individually and independently. As such a lifting mechanism, for example, various known mechanisms such as a ball screw mechanism or a cylinder can be used.

又,液承接部40具有被安裝於杯42之下端部52a之內側之圓筒狀之集液部70。圖3係顯示集液部70之水平剖面之剖視圖。圖4係自內側(旋轉軸CX側)所觀察集液部70之側視圖。 In addition, the liquid receiving portion 40 includes a cylindrical liquid collecting portion 70 attached to the inside of the lower end portion 52 a of the cup 42. FIG. 3 is a cross-sectional view showing a horizontal section of the liquid collecting portion 70. FIG. 4 is a side view of the liquid collecting portion 70 as viewed from the inside (the rotation axis CX side).

集液部70之內周面75具有朝被保持在旋轉夾盤20之基板W側露出之複數個溝71。各溝71之延伸方向沿著鉛垂方向。內周面75於圓周方向上交互地具有較基準面76更凹陷之複數個溝 71、及位於相鄰之溝71間且沿著基準面76之複數個堤埂部72。 The inner peripheral surface 75 of the liquid collecting portion 70 has a plurality of grooves 71 exposed toward the substrate W side held by the spin chuck 20. The extending direction of each groove 71 is along the vertical direction. The inner peripheral surface 75 alternately has a plurality of grooves 71 which are more recessed than the reference surface 76 in the circumferential direction, and a plurality of bank portions 72 located between adjacent grooves 71 and along the reference surface 76.

各溝71之形狀及大小相同,各溝71於俯視時呈半圓狀之凹陷。又,各堤埂部72之形狀及大小亦相同。沿著基準面76之各溝71之第1長度d1(例如為8mm),較沿著基準面76之各堤埂部72之第2長度d2(例如為1mm)長。集液部70就承接處理液之觀點而言,較佳為具有抗藥品性等,例如由鐵氟龍(註冊商標)材料所構成。更具體而言,集液部70例如由PTFE(polytetrafluoroethylene;聚四氟乙烯)所構成。 Each groove 71 has the same shape and size, and each groove 71 has a semicircular depression when viewed from the top. The shape and size of each bank portion 72 are also the same. The first length d1 (for example, 8 mm) of each groove 71 along the reference plane 76 is longer than the second length d2 (for example, 1 mm) of each bank section 72 along the reference plane 76. From the standpoint of receiving the processing liquid, the liquid collecting unit 70 preferably has chemical resistance and the like, and is made of, for example, a Teflon (registered trademark) material. More specifically, the liquid collecting portion 70 is made of, for example, PTFE (polytetrafluoroethylene; polytetrafluoroethylene).

集液部70使自基板W所飛散而附著於內周面75之處理液之液滴在各溝71內合流,並使合流後之液滴因其本身之重量而沿著溝71之延伸方向向下方落下。落下之液滴係通過廢棄溝49,並藉由省略圖示之排氣液機構而自基板處理裝置1被排出。 The liquid collecting part 70 merges the droplets of the processing liquid scattered from the substrate W and adheres to the inner peripheral surface 75 in the grooves 71, and makes the merged droplets along the extending direction of the grooves 71 due to their own weight. Fall down. The dropped liquid droplets are discharged from the substrate processing apparatus 1 through a waste liquid mechanism (not shown) through the waste groove 49.

區隔板15係設置為在液承接部40之周圍將腔室10之內側空間區隔為上下。區隔板15既可為包圍液承接部40之1片之板狀構件,亦可為將複數個板狀構件接合而成者。又,於區隔板15亦可形成有朝厚度方向貫通之貫通孔或缺口,而在本實施形態中形成有為了供用來支撐上表面處理液噴嘴30及二流體噴嘴60之噴嘴基台33、63之支撐軸通過之貫通孔。 The partition plate 15 is provided to partition the inner space of the chamber 10 up and down around the liquid receiving portion 40. The partition plate 15 may be a plate-like member that surrounds one piece of the liquid receiving portion 40 or may be formed by joining a plurality of plate-like members. Further, the partition plate 15 may be formed with a through hole or a notch penetrating in the thickness direction. In this embodiment, a nozzle base 33 for supporting the upper surface treatment liquid nozzle 30 and the two-fluid nozzle 60 is formed. The support shaft of 63 passes through the through hole.

區隔板15之外周端係連結於腔室10之側壁11。又,區隔板15之包圍液承接部40之端緣部係形成為呈直徑較杯43之外徑大之圓形形狀。因此,區隔板15不會成為杯43之升降之障礙。 The outer peripheral end of the partition plate 15 is connected to the side wall 11 of the chamber 10. In addition, the edge portion of the surrounding liquid receiving portion 40 of the partition plate 15 is formed in a circular shape having a larger diameter than the outer diameter of the cup 43. Therefore, the partition plate 15 does not become an obstacle to the raising and lowering of the cup 43.

又,腔室10之側壁11之一部分且於底壁13之附近,設置有排氣管18。排氣管18係連通連接於省略圖示之排氣機構。自風扇過濾器單元14所供給而流過腔室10內之清潔空氣中,通過 液承接部40與區隔板15之間之空氣係自排氣管18被排出裝置外。 An exhaust pipe 18 is provided in a part of the side wall 11 of the chamber 10 and near the bottom wall 13. The exhaust pipe 18 is connected to an exhaust mechanism (not shown). Of the clean air supplied from the fan filter unit 14 and flowing through the chamber 10, the air passing between the liquid receiving portion 40 and the partition plate 15 is discharged from the device through the exhaust pipe 18.

作為被設置在基板處理裝置1之控制部9之硬體之構成係與一般電腦相同。亦即,控制部9係構成為具備有進行各種運算處理之CPU(Central Processing Unit;中央處理單元)、作為儲存基本程式之讀取專用之記憶體的ROM(Read Only Memory;唯獨記憶體)、作為儲存各種資訊之讀寫自如之記憶體的RAM(Random Access Memory;隨機存取記憶體)、及預先儲存有控制用軟體與資料等之磁碟等。藉由控制部9之CPU執行既定之處理程式,使基板處理裝置1之各動作機構由控制部9所控制,而進行基板處理裝置1中之處理。 The hardware configuration of the control unit 9 provided in the substrate processing apparatus 1 is the same as that of a general computer. That is, the control unit 9 is configured to include a CPU (Central Processing Unit) that performs various arithmetic processing, and a ROM (Read Only Memory) that is a memory dedicated to reading the basic program. , RAM (Random Access Memory), which is a readable and writable memory for storing various information, and a magnetic disk in which control software and data are stored in advance. The CPU of the control unit 9 executes a predetermined processing program so that each operating mechanism of the substrate processing apparatus 1 is controlled by the control unit 9 to perform processing in the substrate processing apparatus 1.

<1.2處理之一例>     <1.2 example of processing>    

對基板W之處理順序之一例進行概略說明。以下,對於在對旋轉中之基板W之表面依序進行藥液處理、純水沖洗處理、IPA(isopropyl alcohol;異丙醇)處理後,以更高速使基板W旋轉來進行旋轉甩乾乾燥處理的情形進行說明。於進行對基板W之各處理時,將基板W保持於旋轉夾盤20並且使液承接部40進行升降動作。 An example of the processing procedure of the substrate W will be briefly described. Hereinafter, the surface of the rotating substrate W is sequentially subjected to a chemical liquid treatment, a pure water rinse treatment, and an IPA (isopropyl alcohol; isopropyl alcohol) treatment, and then the substrate W is rotated at a higher speed to perform a spin-drying and drying treatment. The situation will be explained. When performing each process on the substrate W, the substrate W is held on the spin chuck 20 and the liquid receiving portion 40 is raised and lowered.

圖5係顯示藥液處理及純水沖洗處理之情況之基板處理裝置1之局部放大圖。圖6係顯示IPA處理之情況之基板處理裝置1之局部放大圖。再者,在圖5及圖6中,以實線箭頭表示在基板W之上表面流動之處理液,並以2個虛線箭頭表示自基板W之端緣部朝側方飛散之處理液。以下,一邊參照圖5及圖6,一邊對處理之一例進行說明。 FIG. 5 is a partial enlarged view of the substrate processing apparatus 1 showing the conditions of the chemical liquid processing and the pure water rinsing processing. FIG. 6 is a partial enlarged view of the substrate processing apparatus 1 showing the state of the IPA processing. In FIGS. 5 and 6, the processing liquid flowing on the upper surface of the substrate W is indicated by solid arrows, and the processing liquid scattered from the edge of the substrate W to the side is indicated by two dotted arrows. An example of processing will be described below with reference to FIGS. 5 and 6.

於對基板W進行藥液處理時,例如回收部41及杯42、43全部上升,使被保持於旋轉夾盤20之基板W之周圍由杯42之導引部52所包圍(圖5)。於該狀態下基板W與旋轉夾盤20一起被旋轉,藥液(例如DHF液體)自吐出頭31被供給至基板W之上表面。被供給之藥液藉由因基板W之旋轉所產生之離心力而沿著基板W之上表面流動,最終自基板W之端緣部朝向側方飛散。藉此,進行基板W之藥液處理。自旋轉之基板W之端緣部所飛散之藥液係沿著被導引部52之內壁及集液部70之內周面75流下,而自廢棄溝49被排出。 When the substrate W is treated with a chemical solution, for example, the recovery unit 41 and the cups 42 and 43 are all raised so that the periphery of the substrate W held by the spin chuck 20 is surrounded by the guide portion 52 of the cup 42 (FIG. 5). In this state, the substrate W is rotated together with the spin chuck 20, and a chemical solution (for example, DHF liquid) is supplied from the ejection head 31 to the upper surface of the substrate W. The supplied chemical liquid flows along the upper surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W, and finally scatters from the edge of the substrate W toward the side. Thereby, the chemical processing of the substrate W is performed. The chemical liquid scattered from the edge of the rotating substrate W flows down the inner wall of the guided portion 52 and the inner peripheral surface 75 of the liquid collecting portion 70, and is discharged from the waste groove 49.

其次,對基板W進行純水沖洗處理。於此時,例如亦使回收部41及杯42、43全部上升,而維持被保持於旋轉夾盤20之基板W之周圍由杯42之導引部52所包圍之狀態(圖5)。於該狀態下基板W與旋轉夾盤20一起被旋轉,純水自吐出頭31被供給至基板W之上表面。被供給之純水藉由因基板W之旋轉所產生之離心力而沿著基板W之上表面流動,最終自基板W之端緣部朝向側方飛散。藉此,進行基板W之純水沖洗處理。自旋轉之基板W之端緣部所飛散之純水係沿著導引部52之內壁及集液部70之內周面75流下,而自廢棄溝49被排出。 Next, the substrate W is subjected to a pure water rinse process. At this time, for example, all of the recovery unit 41 and the cups 42 and 43 are raised, and the state where the periphery of the substrate W held on the spin chuck 20 is surrounded by the guide portion 52 of the cup 42 is maintained (FIG. 5). In this state, the substrate W is rotated together with the spin chuck 20, and pure water is supplied from the ejection head 31 to the upper surface of the substrate W. The supplied pure water flows along the upper surface of the substrate W by the centrifugal force generated by the rotation of the substrate W, and finally scatters from the edge of the substrate W toward the side. Thereby, the substrate W is rinsed with pure water. The pure water scattered from the edge of the rotating substrate W flows down the inner wall of the guide portion 52 and the inner peripheral surface 75 of the liquid collecting portion 70, and is discharged from the waste trench 49.

其次,對基板W進行IPA處理。於此時,例如成為回收部41及杯42下降,僅杯43上升之狀態。其結果,於杯43之上端部43b與杯42之導引部52之上端部52b之間,形成有包圍被保持在旋轉夾盤20之基板W之周圍之開口(圖6)。於該狀態下基板W與旋轉夾盤20一起被旋轉,IPA自吐出頭31被供給至基板W之上表面。被供給之IPA藉由因基板W之旋轉所產生之離心力而 沿著基板W之上表面流動,最終自基板W之端緣部朝向側方飛散。藉此,進行基板W之IPA處理。自旋轉之基板W之端緣部所飛散之IPA係由杯42之上端部52b及杯43之上端部43b所承接,沿著杯42之外表面及杯43之內表面流下,而被回收至外側回收溝51。 Next, the substrate W is subjected to IPA processing. At this time, for example, the recovery unit 41 and the cup 42 are lowered, and only the cup 43 is raised. As a result, an opening is formed between the upper end portion 43b of the cup 43 and the upper end portion 52b of the guide portion 52 of the cup 42 to surround the substrate W held by the spin chuck 20 (FIG. 6). In this state, the substrate W is rotated together with the spin chuck 20, and the IPA self-ejecting head 31 is supplied to the upper surface of the substrate W. The supplied IPA flows along the upper surface of the substrate W due to the centrifugal force generated by the rotation of the substrate W, and finally scatters from the edge of the substrate W toward the side. Thereby, the IPA processing of the substrate W is performed. The IPA scattered from the edge of the rotating substrate W is received by the upper end portion 52b of the cup 42 and the upper end portion 43b of the cup 43, and flows down along the outer surface of the cup 42 and the inner surface of the cup 43 and is recovered to Outside recovery groove 51.

又,於進行旋轉甩乾乾燥處理時,回收部41及杯42、43全部下降,使杯43之上端部43b之外側上表面43d位於較被保持在旋轉夾盤20之基板W更下方(圖2)。於該狀態下基板W與旋轉夾盤20一起被高速旋轉,使附著於基板W之水滴藉由離心力被旋轉甩乾,而進行乾燥處理。 When the spin-drying and drying process is performed, the recovery portion 41 and the cups 42 and 43 are all lowered so that the upper surface 43d on the outer side of the upper end portion 43b of the cup 43 is positioned lower than the substrate W held by the spin chuck 20 (Fig. 2). In this state, the substrate W is rotated at high speed together with the spin chuck 20, and the water droplets attached to the substrate W are spin-dried by centrifugal force and dried.

<1.3效果>     <1.3 effects>    

圖7係顯示比較例之藥液處理之情況之圖。在圖7中,以實線箭頭表示在基板W之上表面流動之處理液,並以2個虛線箭頭表示自基板W之端緣部朝側方飛散之處理液。圖8係示意地顯示比較例中處理液之液滴101、102移動之情況之橫剖視圖。圖9係示意地表示本實施形態中處理液之液滴101~103移動之情況之橫剖視圖。在圖8及圖9中,以實線箭頭表示各液滴之移動方向。 Fig. 7 is a diagram showing the treatment of a chemical solution of a comparative example. In FIG. 7, the processing liquid flowing on the upper surface of the substrate W is indicated by a solid line arrow, and the processing liquid scattered from the end edge portion of the substrate W to the side is indicated by two dotted arrows. FIG. 8 is a cross-sectional view schematically showing how the droplets 101 and 102 of the treatment liquid move in the comparative example. FIG. 9 is a cross-sectional view schematically showing a state in which droplets 101 to 103 of the processing liquid are moved in this embodiment. In FIGS. 8 and 9, the moving direction of each droplet is indicated by a solid line arrow.

若對附著於液承接部40之內周面之處理液置之不理,便存在有該處理液固化而成為微粒之可能性或發生回濺現象之可能性。由於微粒之產生與回濺現象會成為污染基板之原因,因此希望將如此之污染加以抑制。 If the treatment liquid attached to the inner peripheral surface of the liquid receiving portion 40 is left untreated, there is a possibility that the treatment liquid is solidified and becomes particles, or a splash-back phenomenon may occur. Since the generation of particles and the phenomenon of back splashing can cause the substrate to be contaminated, it is desirable to suppress such contamination.

比較例之液承接部40Y與本實施形態之液承接部40不同,於導引部52之內側並不具有集液部70。因此,於比較例中若對基板W進行液體處理,自旋轉之基板W之端緣部所飛散之處 理液之液滴101便會先附著於導引部52之內壁。該附著之液滴102之一部分維持附著於導引部52之內壁之狀態,殘下之液滴102係沿著導引部52之內壁流下,而自廢棄溝49被排出。 The liquid receiving portion 40Y of the comparative example is different from the liquid receiving portion 40 of the present embodiment in that the liquid receiving portion 70 is not provided inside the guide portion 52. Therefore, in the comparative example, if the substrate W is subjected to the liquid treatment, the droplets 101 of the lysate from the place where the end edge of the rotating substrate W is scattered will first adhere to the inner wall of the guide portion 52. A part of the adhered droplet 102 remains attached to the inner wall of the guide portion 52, and the remaining droplet 102 flows down the inner wall of the guide portion 52 and is discharged from the waste groove 49.

相對於此,本實施形態之液承接部40於導引部52之內側具有集液部70,藉此成為在液承接部40之內周面形成有複數個溝71之狀態。因此,於本實施形態中若對基板W進行液體處理,自旋轉之基板W之端緣部所飛散之處理液之液滴101便會先附著於集液部70之內周面75。該附著之液滴102之大部分沿著各溝71之半圓狀之曲面流動,而與其他附著之液滴102合流。其結果,合流後之液滴103會因相較於液滴102相對較大之自身重量而沿著溝71之延伸方向(在本實施形態中為鉛垂方向)向下方落下。 In contrast, the liquid receiving portion 40 of this embodiment has a liquid collecting portion 70 on the inner side of the guide portion 52, and thereby a plurality of grooves 71 are formed on the inner peripheral surface of the liquid receiving portion 40. Therefore, in this embodiment, if the substrate W is subjected to liquid treatment, the droplets 101 of the processing liquid scattered from the edge of the rotating substrate W will first adhere to the inner peripheral surface 75 of the liquid collecting portion 70. Most of the attached droplets 102 flow along a semicircular curved surface of each groove 71 and merge with other attached droplets 102. As a result, the combined droplets 103 fall downward along the extending direction of the groove 71 (vertical direction in this embodiment) due to the relatively larger weight of the droplets 103 compared to the droplets 102.

如此,在本實施形態中藉由促使附著於液承接部40之內周面之各液滴102之合流,可抑制液滴102附著於液承接部40之內周面之狀態。其結果,可減低起因於對液滴102附著於內周面之狀態置之不理(甚至導致微粒之產生或回濺現象)所導致污染之風險。 As described above, in this embodiment, by advancing the confluence of the droplets 102 adhering to the inner peripheral surface of the liquid receiving portion 40, it is possible to suppress the state of the droplets 102 adhering to the inner peripheral surface of the liquid receiving portion 40. As a result, it is possible to reduce the risk of contamination caused by ignoring the state in which the droplet 102 is attached to the inner peripheral surface (or even causing the generation of particles or splashing back).

尤其,使附著於液承接部40之內周面之液滴迅速地落下之本實施形態之態樣,相較於在液承接部之內周面補足液滴而加以維持之專利文獻1與專利文獻2之態樣可更有效地減低污染之風險。 In particular, the aspect of the present embodiment in which droplets adhered to the inner peripheral surface of the liquid receiving portion 40 are dropped quickly is maintained in comparison with Patent Document 1 and Patent, which are supplemented by droplets on the inner peripheral surface of the liquid receiving portion. The appearance of reference 2 can more effectively reduce the risk of pollution.

圖10係比較例之回濺現象之檢查結果。圖11係本實施形態之回濺現象之檢查結果。在該檢查中,將PH(酸鹼)試紙貼在杯43之上端部43b之上側,並在圖7及圖5所示之液承接部40Y、40之升降狀態下對基板W進行液體處理。具體而言,該液體處 理係自位於旋轉軸CX上之吐出頭31以每分鐘500ml之流量將DHF供給至以800rpm之旋轉速度進行旋轉之基板W之上表面之液體處理。該液體處理總共進行5次,每次都將PH試紙更換為新品。圖10及圖11之「變色部位之個數」欄係表示處理液之液滴附著於PH試紙而使PH試紙變色之部位的個數。 FIG. 10 is a result of inspection of a backlash phenomenon of a comparative example. FIG. 11 is an inspection result of the splash back phenomenon in this embodiment. In this inspection, a PH (acid-base) test paper is affixed to the upper side of the upper end portion 43b of the cup 43, and the substrate W is subjected to liquid treatment in the raised and lowered states of the liquid receiving portions 40Y and 40 shown in Figs. 7 and 5. Specifically, the liquid processing is a liquid processing in which the DHF is supplied from the ejection head 31 on the rotation axis CX at a flow rate of 500 ml per minute to the upper surface of the substrate W which is rotated at a rotation speed of 800 rpm. This liquid treatment was performed 5 times in total, and the PH test paper was replaced with a new one each time. The “Number of discolored parts” column in FIG. 10 and FIG. 11 indicates the number of parts where the droplets of the treatment liquid adhere to the PH test paper and the pH test paper changes color.

如圖10及圖11所示,若將5次之檢查加以平均,則相對於比較例在PH試紙產生約51個變色部位,本實施形態則在PH試紙僅產生0.6個變色部位。通常,由於自基板W所飛散之液滴會自該基板W朝大致水平方向移動,因此在圖7及圖5所示之液承接部40Y、40之升降狀態下,該液滴應難以直接地附著於杯43之上端部43b之上側。如此一來,附著於杯43之上端部43b之上側之液滴係自基板朝向液承接部40Y、40飛散之處理液與自液承接部40Y、40回濺之處理液碰撞所產生之液滴的可能性很高。就該觀點而言,若重新檢視圖10及圖11之檢查結果,即可得知本實施形態相較於比較例,可將回濺現象減低9成左右。該情形可認定為抑制液滴102附著於液承接部40之內周面之狀態之本實施形態之效果。 As shown in FIGS. 10 and 11, if the five inspections are averaged, about 51 color-changing sites are generated in the PH test paper compared to the comparative example. In this embodiment, only 0.6 color-changing sites are generated in the PH test paper. In general, since the liquid droplets scattered from the substrate W move from the substrate W to a substantially horizontal direction, it is difficult to directly drop the liquid droplets in the ascending and descending states of the liquid receiving portions 40Y and 40 shown in FIGS. 7 and 5. It is attached to the upper side of the upper end portion 43b of the cup 43. In this way, the droplets attached to the upper side of the upper end portion 43b of the cup 43 are droplets generated by the collision of the processing liquid scattered from the substrate toward the liquid receiving portions 40Y and 40 and the processing liquid splashed back from the liquid receiving portions 40Y and 40. The probability is high. From this point of view, if the inspection results of the view 10 and FIG. 11 are re-examined, it can be known that, compared with the comparative example, this embodiment mode can reduce the back splash phenomenon by about 90%. This case can be considered as the effect of this embodiment which suppresses the state where the droplet 102 is attached to the inner peripheral surface of the liquid receiving portion 40.

尤其,在本實施形態中,於使用液承接部70進行承液之情形時(圖5所示之情形時),集液部70之內周面75至少在與被保持於旋轉夾盤20之基板W相同鉛垂方向之位置包含複數個溝71。通常,由於自基板W所飛散之液滴會自該基板W朝大致水平方向移動,因此藉由在與基板W相同鉛垂方向之位置設置複數個溝71,可更有效地促使附著於液承接部40之內周面之各液滴102之合流。 In particular, in the present embodiment, when the liquid receiving portion 70 is used for receiving liquid (in the case shown in FIG. 5), the inner peripheral surface 75 of the liquid collecting portion 70 is at least held by the rotating chuck 20. The substrate W includes a plurality of grooves 71 at the same position in the vertical direction. Generally, the liquid droplets scattered from the substrate W move from the substrate W in a substantially horizontal direction. Therefore, by providing a plurality of grooves 71 in the same vertical direction as the substrate W, adhesion to the liquid receiver can be more effectively promoted. Convergence of the droplets 102 on the inner peripheral surface of the portion 40.

又,在本實施形態中,各溝71與各堤埂部72係沿著圓周方向被交互地配置,且沿著基準面76之各溝71之第1長度d1(例如為8mm)較沿著基準面76之各堤埂部72之第2長度d2(例如為1mm)長。因此,相較於使複數個液滴合流之作用相對較弱之堤埂部72,藉由沿著半圓狀之曲面而使複數個液滴合流之作用相對較強之溝71來形成內周面75之大部分,可更有效地促使附著於液承接部40之內周面之各液滴102之合流。 In this embodiment, each groove 71 and each bank portion 72 are alternately arranged along the circumferential direction, and the first length d1 (for example, 8 mm) of each groove 71 along the reference surface 76 is longer along The second length d2 (for example, 1 mm) of each bank portion 72 of the reference surface 76 is long. Therefore, the inner peripheral surface is formed by a groove 71 that makes the plurality of droplets merge relatively stronger along a semicircular curved surface than the bank portion 72 where the effect of the plurality of liquid droplets merge is relatively weak. Most of 75 can promote the convergence of the droplets 102 attached to the inner peripheral surface of the liquid receiving portion 40 more effectively.

又,在本實施形態中,液承接部40具有:內側之杯42,其直徑相對較小且在與基板W較近之位置包圍旋轉夾盤20之周圍;及外側之杯43,其直徑相對較大且在與基板W較遠之位置包圍旋轉夾盤20之周圍。而且,藉由在內側之杯42之更內側設置集液部70,而成為該杯42之內周面包含複數個溝71之狀態。通常,在處理液附著於與基板W較近之內周面之情形,相較於在處理液附著於與基板W較遠之杯的內周面之情形,因微粒之產生或回濺現象所導致基板污染之風險會提高。在本實施形態中,藉由在基板污染風險較高之杯42的內側設置集液部70,可更有效地減低該風險。 In this embodiment, the liquid receiving portion 40 includes an inner cup 42 having a relatively small diameter and surrounding the rotation chuck 20 at a position closer to the substrate W, and an outer cup 43 having a relatively opposite diameter. It is large and surrounds the periphery of the chuck 20 at a position far from the substrate W. Further, by providing the liquid collecting portion 70 on the inner side of the inner cup 42, the inner peripheral surface of the cup 42 includes a plurality of grooves 71. Generally, when the processing liquid is adhered to the inner peripheral surface closer to the substrate W, compared with the case where the processing liquid is adhered to the inner peripheral surface of the cup farther from the substrate W, the particles are generated or splashed back due to the phenomenon. The risk of substrate contamination is increased. In this embodiment, by providing the liquid collection part 70 inside the cup 42 which has a high risk of substrate contamination, this risk can be reduced more effectively.

<2第2實施形態>     <2Second Embodiment>    

圖12係顯示第2實施形態之基板處理裝置1A之剖視圖。第2實施形態之基板處理裝置1A之整體構成及處理動作,與第1實施形態大致相同。第2實施形態與第1實施形態之不同點,主要在於液承接部40A及集液部70A之構成。 Fig. 12 is a sectional view showing a substrate processing apparatus 1A according to a second embodiment. The overall configuration and processing operation of the substrate processing apparatus 1A of the second embodiment are substantially the same as those of the first embodiment. The difference between the second embodiment and the first embodiment lies mainly in the configuration of the liquid receiving portion 40A and the liquid collecting portion 70A.

第2實施形態之液承接部40A取代第1實施形態之回 收部41而具備有杯41A。杯41A除了回收部41之各構成以外,進一步具有導引部47,該導引部47自內壁部45與中壁部48之間立起,上端部一邊描繪平滑之圓弧一邊朝中心側(靠近被保持在旋轉夾盤20之基板W之旋轉軸CX的方向)斜上方延伸。 The liquid receiving portion 40A of the second embodiment includes a cup 41A instead of the collecting portion 41 of the first embodiment. The cup 41A has, in addition to each configuration of the recovery portion 41, a guide portion 47 which stands between the inner wall portion 45 and the middle wall portion 48, and the upper end portion faces a center side while drawing a smooth arc. (In the direction close to the rotation axis CX of the substrate W held on the spin chuck 20) extends obliquely upward.

導引部47具有一邊描繪平滑之圓弧一邊朝中心側(靠近基板W之旋轉軸CX的方向)斜上方延伸之上端部47b。 The guide portion 47 has an upper end portion 47 b extending obliquely upward toward the center side (in the direction close to the rotation axis CX of the substrate W) while drawing a smooth arc.

又,導引部47與中壁部48之間係設為用以收集並回收使用完畢之處理液之圓環狀之內側回收溝50。又,內側回收溝50之構成與前述之外側回收溝51之構成相同。具體而言,於內側回收溝50連接有用以將被收集至內側回收溝50之處理液回收至被設於基板處理裝置1之外部之回收槽的回收機構(省略圖示)。再者,內側回收溝50之底部相對於水平方向僅傾斜微小角度,並於其最低之位置連接有回收機構。藉此,可平順地回收流入內側回收溝50之處理液。 Further, a circular inner recovery groove 50 is provided between the guide portion 47 and the middle wall portion 48 to collect and recover the used processing liquid. The configuration of the inner recovery groove 50 is the same as the configuration of the outer recovery groove 51 described above. Specifically, a recovery mechanism (not shown) is connected to the inner recovery groove 50 for recovering the processing liquid collected in the inner recovery groove 50 to a recovery tank provided outside the substrate processing apparatus 1. In addition, the bottom of the inner recovery groove 50 is inclined at a slight angle with respect to the horizontal direction, and a recovery mechanism is connected to its lowest position. Thereby, the processing liquid flowing into the inner recovery groove 50 can be smoothly recovered.

又,杯42之導引部52之上端部52b係設置為與杯41之導引部47之上端部47b在上下方向重疊。因此,在杯41與杯42最接近之狀態下,導引部52之上端部52b保持極微小之間隔而接近於導引部47之上端部47b。此外,將上端部52b之前端朝下方折返所形成之折返部52c,係設為在杯41與杯42最接近之狀態下,與導引部47之上端部47b之前端在水平方向上重疊之長度。 The upper end portion 52 b of the guide portion 52 of the cup 42 is provided so as to overlap the upper end portion 47 b of the guide portion 47 of the cup 41 in the vertical direction. Therefore, when the cup 41 and the cup 42 are closest to each other, the upper end portion 52 b of the guide portion 52 is kept close to the upper end portion 47 b of the guide portion 47 at a very small interval. In addition, the folded-back portion 52c formed by folding the front end of the upper end portion 52b downward is configured to overlap the front end of the upper end portion 47b of the guide portion 47 in a horizontal direction in a state where the cup 41 and cup 42 are closest to each other. length.

又,液承接部40A具有被安裝於杯41A之導引部47之內側之圓筒狀之集液部70A。集液部70A之內周面75A與前述之實施形態之內周面75相同地,於圓周方向上交互地具有露出於被保持在旋轉夾盤20之基板W側之複數個溝及複數個堤埂部(均省 略圖示)。又,與第1實施形態相同地,沿著基準面之各溝之第1長度(例如為8mm)較沿著基準面之各堤埂部之第2長度(例如為1mm)長。集液部70A使自基板W所飛散而附著於內周面75之處理液之液滴在各溝內合流,並使合流後之液滴因其本身重量而沿著溝之延伸方向向下方落下。落下之液滴通過廢棄溝49並藉由省略圖示之排氣液機構而自基板處理裝置1A被排出。 In addition, the liquid receiving portion 40A includes a cylindrical liquid collecting portion 70A that is mounted inside the guide portion 47 of the cup 41A. The inner peripheral surface 75A of the liquid collecting portion 70A has a plurality of grooves and a plurality of banks exposed alternately in the circumferential direction in the same circumferential direction as the inner peripheral surface 75 of the aforementioned embodiment and exposed on the substrate W side of the rotary chuck 20. Crotch (both are not shown). Also, as in the first embodiment, the first length (for example, 8 mm) of each groove along the reference plane is longer than the second length (for example, 1 mm) of each bank section along the reference plane. The liquid collecting part 70A merges the droplets of the processing liquid scattered from the substrate W and adhered to the inner peripheral surface 75 in the respective grooves, and causes the combined droplets to drop downward along the extending direction of the grooves due to their own weight. . The dropped liquid droplets are discharged from the substrate processing apparatus 1A through the waste groove 49 and the exhaust liquid mechanism (not shown).

圖13係第2實施形態之回濺現象之檢查結果。在該檢查中,將PH試紙貼在杯43之上端部43b之上側,並在使杯41A、42、43上升之狀態下對基板W進行液體處理。具體而言,該液體處理係自位於旋轉軸CX上之吐出頭31以每分鐘500ml之流量將DHF供給至以800rpm之旋轉速度進行旋轉之基板W之上表面之液體處理。該液體處理總共進行5次,每次都將PH試紙更換為新品。而且,圖13之「變色部位之個數」欄,係表示處理液之液滴附著於PH試紙而使PH試紙變色之部位的個數。 Fig. 13 is a result of inspection of a splash-back phenomenon in the second embodiment. In this inspection, the pH test paper is attached to the upper side of the upper end portion 43 b of the cup 43, and the substrate W is subjected to liquid treatment while the cups 41A, 42, and 43 are raised. Specifically, the liquid treatment is a liquid treatment in which DHF is supplied from the ejection head 31 located on the rotation axis CX at a flow rate of 500 ml per minute to the upper surface of the substrate W that is rotated at a rotation speed of 800 rpm. This liquid treatment was performed 5 times in total, and the PH test paper was replaced with a new one each time. Moreover, the "number of discolored parts" column in FIG. 13 shows the number of parts where the droplets of the treatment liquid adhered to the pH test paper and the pH test paper changed color.

如圖13所示,若將5次之檢查加以平均,第2實施形態便在PH試紙產生約164個變色部位。若將第2實施形態之檢查結果(圖13)與第1實施形態之檢查結果(圖11)進行比較,第2實施形態之PH試紙之變色部位較多。其理由可能起因於第2實施形態之承液位置(杯41A之導引部47及集液部70A)較第1實施形態之承液位置(杯42之導引部52及集液部70)更靠近基板W,而使自基板W朝向液承接部40A飛散之處理液容易與自液承接部40A回濺之處理液碰撞。 As shown in FIG. 13, if the five inspections are averaged, the second embodiment generates about 164 discolored sites on the PH test paper. Comparing the inspection results of the second embodiment (FIG. 13) with the inspection results of the first embodiment (FIG. 11), the pH test paper of the second embodiment has many discolored parts. The reason may be due to the liquid receiving position (the guide portion 47 and the liquid collecting portion 70A of the cup 41A) in the second embodiment compared to the liquid receiving position (the guiding portion 52 and the liquid collecting portion 70 of the cup 42) in the first embodiment. It is closer to the substrate W, so that the processing liquid scattered from the substrate W toward the liquid receiving portion 40A easily collides with the processing liquid splashed back from the liquid receiving portion 40A.

於第2實施形態中,亦與第1實施形態相同地,藉由設置集液部70A,可相較於不設置集液部70A之情形減低基板污染 之風險。 In the second embodiment, as in the first embodiment, by providing the liquid collecting portion 70A, the risk of contamination of the substrate can be reduced compared to the case where the liquid collecting portion 70A is not provided.

又,於第2實施形態中,亦與第1實施形態相同地,藉由於與基板W相同鉛垂方向之位置設置複數個溝,可更有效地促使附著於液承接部40A之內周面之各液滴之合流。 Also, in the second embodiment, similarly to the first embodiment, since a plurality of grooves are provided at positions in the same vertical direction as the substrate W, adhesion to the inner peripheral surface of the liquid receiving portion 40A can be more effectively promoted. Confluence of droplets.

又,於第2實施形態中,亦與第1實施形態相同地,相較於使複數個液滴合流之作用相對較弱之堤埂部,藉由使複數個液滴合流之作用相對較強之溝來形成內周面75A之大部分,可更有效地促使附著於液承接部40A之內周面之各液滴之合流。 In addition, in the second embodiment, as in the first embodiment, the effect of converging a plurality of liquid droplets is relatively stronger than that of a bank where the effect of converging a plurality of liquid droplets is relatively weak. The grooves form most of the inner peripheral surface 75A, and can more effectively promote the confluence of the droplets attached to the inner peripheral surface of the liquid receiving portion 40A.

又,於第2實施形態中,亦與第1實施形態相同地,藉由在接近基板W且基板污染之風險較高之杯41之內側設置集液部70A,可更有效地減低該風險。 In the second embodiment, as in the first embodiment, the risk can be reduced more effectively by providing the liquid collecting portion 70A inside the cup 41 which is close to the substrate W and has a high risk of substrate contamination.

<3變形例>     <3 modifications>    

以上,雖已對本發明之實施形態進行說明,但只要不脫離其主旨,本發明可進行前述之內容以外之各種變更。 Although the embodiment of the present invention has been described above, the present invention can be modified in various ways other than those described above without departing from the gist thereof.

在前述之實施形態中,雖已對將形成有溝及堤埂部之集液部70、70A安裝於杯42、41A之導引部52、47之內側之態樣進行說明,但並不限定於此。例如,亦可藉由將杯42、41A之導引部52、47之內側切削,而於該導引部52、47之內側形成溝及堤埂部(即集液部)。 In the foregoing embodiment, the description has been given of the state in which the liquid collecting portions 70 and 70A formed with the grooves and the bank portions are installed inside the guide portions 52 and 47 of the cups 42 and 41A, but it is not limited. herein. For example, by cutting the inside of the guide portions 52 and 47 of the cups 42 and 41A, a groove and a bank (ie, a liquid collecting portion) can be formed inside the guide portions 52 and 47.

又,在前述之第1實施形態中,雖已對在導引部52之下端部52a之內側之一部分設置集液部70之態樣進行說明,但並不限定於此。例如,既可為於導引部52之下端部52a之內側之全部設置集液部70之態樣,亦可為於導引部52之下端部52a及上 端部52b之內側之全部設置集液部70之態樣。 Moreover, in the said 1st Embodiment, although the aspect which provided the liquid collecting part 70 in the one part inside the lower part 52a of the guide part 52 was demonstrated, it is not limited to this. For example, the liquid collecting portion 70 may be provided on the inside of the lower end portion 52a of the guide portion 52, or the liquid collecting portion may be provided on the inside of the lower end portion 52a and the upper end portion 52b of the guide portion 52. The appearance of the Department 70.

又,在前述之各實施形態中,雖已對在液承接部40、40A所具有之複數個杯中最內側之杯的內周面設置集液部70、70A之態樣進行說明,但並不限定於此。若可於該等複數個杯中至少在最內側之杯之內周面設置集液部,即可更有效地減低基板污染之風險。又,亦可於該等複數個杯中僅於最內側之杯以外之杯之內周面設置集液部。 In each of the foregoing embodiments, a description has been given of a case where the liquid collecting portions 70 and 70A are provided on the inner peripheral surface of the innermost cup of the plurality of cups included in the liquid receiving portion 40 and 40A. Not limited to this. If a liquid collection part can be provided in the plurality of cups at least on the inner peripheral surface of the innermost cup, the risk of substrate contamination can be reduced more effectively. Moreover, a liquid collection part may be provided in the plurality of cups only on the inner peripheral surface of the cups other than the innermost cup.

又,在前述之第1實施形態中,雖已對集液部70由PTFE所構成之態樣進行說明,但亦可為集液部70由其他材質(例如PFA(Polyfluoroalkoxy;四氟乙烯-全氟烷氧基乙烯基醚共聚物))所構成之態樣。 Furthermore, in the first embodiment described above, the description has been given of the case where the liquid collecting portion 70 is made of PTFE, but the liquid collecting portion 70 may be made of other materials (for example, PFA (Polyfluoroalkoxy; Fluoroalkoxy vinyl ether copolymer)).

圖14係示意地表示變形例中處理液之液滴101~103進行移動之情況之橫剖視圖。在圖14中圖示有變形例之集液部70B之複數個溝中的2個溝71B。又,在圖14中,未圖示之基板W之旋轉方向係紙面之逆時針方向,自該基板W所飛散之液滴101係以實線箭頭之軌跡進行移動。 FIG. 14 is a cross-sectional view schematically showing a case where the droplets 101 to 103 of the processing liquid are moved in the modification. FIG. 14 illustrates two grooves 71B of the plurality of grooves of the liquid collecting portion 70B according to the modification. In FIG. 14, the rotation direction of the substrate W (not shown) is the counterclockwise direction of the paper surface, and the droplets 101 scattered from the substrate W are moved along the trajectory of a solid arrow.

集液部70B之複數個溝,包含下游側之部分相較於基板W之旋轉方向之上游側之部分更深地凹陷之溝71B。換言之,集液部70B之複數個溝包含相對於基板W之徑向朝該基板W之旋轉方向傾斜之方向凹陷之溝71B。藉此,自基板W飛散而著液於溝71B內之液滴102,會順著飛散之勢而容易於該溝71B內流動,從而容易與其他液滴102合流。如此,藉由使溝71B之凹陷形狀變形,可促使液滴彼此之合流,而可抑制液滴102附著於液承接部之內周面之狀態。 The plurality of grooves of the liquid collecting portion 70B include grooves 71B in which the portion on the downstream side is deeper than the portion on the upstream side in the rotation direction of the substrate W. In other words, the plurality of grooves of the liquid collecting portion 70B include grooves 71B which are recessed in a direction inclined with respect to the radial direction of the substrate W toward the rotation direction of the substrate W. As a result, the droplets 102 scattered from the substrate W and dripping into the groove 71B will easily flow in the groove 71B along the scattering potential, and thus easily merge with other droplets 102. In this way, by deforming the recessed shape of the groove 71B, the liquid droplets can be merged with each other, and the state where the liquid droplets 102 adhere to the inner peripheral surface of the liquid receiving portion can be suppressed.

圖15係於變形例中,自內側(旋轉軸CX側)所觀察之集液部70C之側視圖。圖16係各溝71C之第1長度為8mm且各堤埂部72C之第2長度為1mm之情形時之回濺現象之檢查結果。圖17係各溝71C之第1長度為4mm且各堤埂部72C之第2長度為1mm之情形時之回濺現象之檢查結果。圖18係各溝71C之第1長度為2mm且各堤埂部72C之第2長度為1mm之情形時之回濺現象之檢查結果。 FIG. 15 is a side view of the liquid collecting portion 70C viewed from the inside (the rotation axis CX side) in the modification. FIG. 16 is an inspection result of the splash back phenomenon when the first length of each groove 71C is 8 mm and the second length of each bank portion 72C is 1 mm. FIG. 17 is an inspection result of the splash back phenomenon when the first length of each groove 71C is 4 mm and the second length of each bank portion 72C is 1 mm. FIG. 18 is an inspection result of the splash back phenomenon when the first length of each groove 71C is 2 mm and the second length of each bank portion 72C is 1 mm.

如圖15所示,集液部70C之內周面75C於圓周方向上交互地具有較基準面更凹陷之複數個溝71C、及位於相鄰之溝71C間且沿著基準面之複數個堤埂部72C。各溝71C之延伸方向係由基板W之旋轉方向(圖15中自右向左之方向)之成分與鉛垂向下之成分所合成之方向(更具體而言為傾斜45度之方向)。 As shown in FIG. 15, the inner peripheral surface 75C of the liquid collecting portion 70C alternately has a plurality of grooves 71C which are more concave than the reference surface in the circumferential direction, and a plurality of banks located between the adjacent grooves 71C and along the reference surface.埂 部 72C. The extending direction of each groove 71C is a direction (more specifically, a direction inclined by 45 degrees) composed of the components in the rotation direction of the substrate W (the direction from right to left in FIG. 15) and the components in the vertical direction.

因此,在該變形例中,自旋轉之基板W所飛散之處理液之液滴,於被集液部70C之內周面75C承接後,順著飛散之勢沿著複數個溝71C朝斜下方流動。又,藉由利用旋轉馬達22而使基板W旋轉,於集液部70C之內周面75C產生沿著各溝71C之延伸方向之氣流,可促使附著於內周面75C之液滴之落下。 Therefore, in this modification, the droplets of the processing liquid scattered by the rotating substrate W are received by the inner peripheral surface 75C of the liquid collecting portion 70C, and then are scattered downward along the plurality of grooves 71C along the scattering tendency. flow. In addition, by rotating the substrate W with the rotation motor 22, an air flow is generated in the inner peripheral surface 75C of the liquid collecting portion 70C along the extending direction of each groove 71C, and the droplets adhering to the inner peripheral surface 75C can be dropped.

而且,自將圖16至圖18之檢查結果加以滙整之圖19可知,藉由將第1長度設為較短,可減低引起回濺現象之可能性。此情形可推測係起因於藉由使溝71C之寬度變窄,而使複數個液滴變得容易在溝71C內合流。然而,就在溝71C內使複數個液滴合流之觀點而言,較佳為將第1長度設定為較自基板W飛散之液滴之直徑(例如為1~2mm)更寬。 Furthermore, it can be seen from FIG. 19 that the inspection results of FIG. 16 to FIG. 18 are aggregated. By setting the first length to be short, the possibility of causing a splash-back phenomenon can be reduced. This case is presumably due to the narrowing of the width of the groove 71C, which makes it easier for a plurality of droplets to converge in the groove 71C. However, from the viewpoint of combining a plurality of droplets in the groove 71C, it is preferable to set the first length to be wider than the diameter (for example, 1 to 2 mm) of the droplets scattered from the substrate W.

又,自將圖16至圖18之檢查結果加以滙整之圖19 可知,若第2長度較短,便可減低引起回濺現象之可能性。此情形可推測係起因於藉由使堤埂部72C之寬度變窄,而使液滴變得難以附著於堤埂部72C上(使液滴變得容易移動至位於與堤埂部72C相鄰之兩側之各溝71C)。 In addition, as shown in FIG. 19 where the inspection results of FIG. 16 to FIG. 18 are summarized, if the second length is short, the possibility of causing a splash-back phenomenon can be reduced. This is presumably due to the narrowing of the width of the embankment portion 72C, which makes it difficult for droplets to adhere to the embankment portion 72C (to make it easier for the droplets to move adjacent to the embankment portion 72C). 71C on both sides of the groove).

又,於前述之各實施形態中,雖已具備液承接部可相互獨立地升降之複數個杯,但複數個杯亦可為被一體地構成而進行升降者。此外,液承接部40亦可為僅具備包圍旋轉基座21之1個杯者。 In addition, in each of the above-mentioned embodiments, although a plurality of cups capable of lifting and lowering the liquid receiving portion independently are provided, the plurality of cups may be raised and lowered by being integrally formed. In addition, the liquid receiving portion 40 may be provided with only one cup surrounding the rotary base 21.

又,作為由基板洗淨裝置1所處理之處理對象之基板,並不限定於半導體用途之基板,亦可為太陽能電池用途之基板或用於液晶顯示裝置等之平面顯示器之玻璃基板。 The substrate to be processed by the substrate cleaning device 1 is not limited to a substrate for semiconductor applications, and may be a substrate for solar cells or a glass substrate for a flat panel display such as a liquid crystal display device.

此外,基板處理裝置1只要為一邊使被保持在旋轉夾盤之基板進行旋轉,一邊對其表面供給處理液,並藉由杯來承接自基板所飛散之處理液之裝置即可,除了單片式之洗淨處理裝置或蝕刻處理裝置以外,亦可為例如塗佈光阻劑等之旋轉塗佈裝置(旋轉塗佈機(spin coater))或旋轉顯影裝置(旋轉顯影器(spin developer))。 In addition, the substrate processing apparatus 1 may be a device that supplies a processing liquid to its surface while rotating a substrate held on a spin chuck, and receives a processing liquid scattered from the substrate through a cup, except for a single piece. In addition to the cleaning processing device or etching processing device of the above-mentioned type, for example, a spin coating device (spin coater) or a spin developing device (spin developer) that applies a photoresist may be used. .

以上,雖已對實施形態及其變形例之基板處理裝置進行說明,但該等係本發明較佳之實施形態之例,並非限定本發明之實施範圍者。本發明可在其發明範圍內進行各實施形態之自由組合,或可進行各實施形態之任意構成元件之變形,或者各實施形態中任意構成元件之省略。 Although the substrate processing apparatus of the embodiment and its modification has been described above, these are examples of the preferred embodiment of the present invention and do not limit the scope of implementation of the present invention. The present invention can freely combine the various embodiments within the scope of the invention, or can deform any constituent element of each embodiment, or omit any constituent element in each embodiment.

Claims (6)

一種基板處理裝置,其具備有:基板保持部,其水平地保持基板;處理液供給部,其供給處理液至朝向被保持於上述基板保持部之上述基板;液承接部,其包圍上述基板保持部之周圍,承接自上述基板所飛散之上述處理液;及基板旋轉部,其使上述基板,以通過被保持於上述基板保持部之上述基板之中心而朝鉛垂方向延伸之旋轉軸為中心進行旋轉;上述液承接部之內周面具有朝被保持在上述基板保持部之上述基板側露出之複數個溝,且上述複數個溝各自之延伸方向包含鉛垂方向之成分。     A substrate processing apparatus includes: a substrate holding section that holds a substrate horizontally; a processing liquid supply section that supplies a processing liquid toward the substrate held by the substrate holding section; and a liquid receiving section that surrounds the substrate holding Around the part, the processing liquid scattered from the substrate is received; and the substrate rotating part makes the substrate center on a rotation axis extending in the vertical direction through the center of the substrate held by the substrate holding part. Rotating; the inner peripheral surface of the liquid receiving portion has a plurality of grooves exposed toward the substrate side held by the substrate holding portion, and the extending direction of each of the plurality of grooves includes a component in a vertical direction.     如請求項1之基板處理裝置,其中,上述延伸方向係將上述基板之旋轉方向之成分與鉛垂向下之成分加以合成之方向。     The substrate processing apparatus according to claim 1, wherein the extending direction is a direction in which a component in a rotation direction of the substrate and a component in a vertical direction are combined.     如請求項1之基板處理裝置,其中,上述複數個溝包含上述基板旋轉方向之下游側部分相較於上游側部分凹陷更深之溝。     According to the substrate processing apparatus of claim 1, wherein the plurality of grooves include a groove deeper in the downstream portion of the substrate rotation direction than the upstream portion.     如請求項1之基板處理裝置,其中,上述內周面至少在與被保持於上述基板保持部之上述基板相同鉛垂方向之位置包含上述複數個溝。     The substrate processing apparatus according to claim 1, wherein the inner peripheral surface includes the plurality of grooves at least in the same vertical direction as the substrate held by the substrate holding portion.     如請求項1之基板處理裝置,其中,於圓周方向上,上述內周面交互地具有較基準面更凹陷之上述複數個溝、及位於相鄰之溝間且沿著上述基準面之複數個堤埂部,且沿著上述基準面之各溝之第1長度,較沿著上述基準面之各堤埂部之第2長度長。     The substrate processing apparatus according to claim 1, wherein in the circumferential direction, the inner peripheral surface alternately has the plurality of grooves which are more recessed than the reference surface, and the plurality of grooves located between adjacent grooves and along the reference surface. The first length of each bank along the reference plane is longer than the second length of each bank along the reference plane.     如請求項1至5中任一項之基板處理裝置,其中,上述液承接部具有涵蓋從直徑相對較小且在與上述基板較近之位置包圍上述基板保持部之周圍之內側的杯部,到直徑相對較大且在與上述基板較遠之位置包圍上述基板保持部之周圍之外側的杯部之複數個杯部,且至少上述內側的杯部之內周面包含有上述複數個溝。     The substrate processing apparatus according to any one of claims 1 to 5, wherein the liquid receiving portion has a cup portion covering an inner side that surrounds the periphery of the substrate holding portion from a relatively small diameter and a position closer to the substrate, The plurality of cup portions are relatively large in diameter and surround the cup portion on the outer side of the substrate holding portion at a position farther from the substrate, and at least the inner bread of the inner cup portion contains the plurality of grooves.    
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