WO2018048254A1 - Mandrin électrostatique et son procédé de fabrication - Google Patents

Mandrin électrostatique et son procédé de fabrication Download PDF

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Publication number
WO2018048254A1
WO2018048254A1 PCT/KR2017/009890 KR2017009890W WO2018048254A1 WO 2018048254 A1 WO2018048254 A1 WO 2018048254A1 KR 2017009890 W KR2017009890 W KR 2017009890W WO 2018048254 A1 WO2018048254 A1 WO 2018048254A1
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Prior art keywords
dielectric layer
substrate
electrostatic chuck
forming
protrusions
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PCT/KR2017/009890
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English (en)
Korean (ko)
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조생현
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(주)브이앤아이솔루션
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Priority to CN201780051392.6A priority Critical patent/CN109891570A/zh
Priority to JP2019510454A priority patent/JP2019530211A/ja
Publication of WO2018048254A1 publication Critical patent/WO2018048254A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to an electrostatic chuck for fixing a substrate by an electrostatic force in a substrate processing apparatus and a method of manufacturing the same.
  • An electrostatic chuck is used as means for adsorbing and holding a substrate to be processed such as a semiconductor substrate, an LCD substrate, and an OLED substrate in a process chamber for performing substrate processing such as etching, CVD, sputtering, ion implantation, ashing, and evaporation deposition.
  • the structure of the conventional electrostatic chuck disclosed in the above Patent Documents 1 and 2 is such that the electrode 102 is held inside the metal plate 100 via an organic adhesive 101 such as silicone resin, And one dielectric layer 103 is adhered and integrated.
  • an electrode (tungsten) is printed on the surface of the ceramic green sheet to be a dielectric layer by firing, another ceramic green sheet is superposed thereon, ) Is adopted.
  • the dielectric 103 and the electrode 102 are manufactured as another manufacturing method of the electrostatic chuck, as disclosed in Patent Document 6, Can be formed by plasma spraying.
  • the dielectric 103 and the electrode 102 are formed by plasma spraying, there is a problem that the withstand voltage characteristic is poor due to the formation of voids and the like, the life is short, and the attraction force is deteriorated.
  • the accuracy of the substrate processing is affected depending on the state of the mask close to the substrate.
  • the degree of adhesion of the substrate and the mask is reduced due to sagging of the mask, which makes it difficult to process the substrate with precision.
  • Patent Document 1 Japanese Utility Model Publication No. 4-133443
  • Patent Document 2 Japanese Patent Application Laid-Open No. 10-223742
  • Patent Document 3 Japanese Patent Application Laid-Open No. 2003-152065
  • Patent Document 4 Japanese Patent Application Laid-Open No. 2001-338970
  • Patent Document 5 Korean Patent Registration No. 10-0968019
  • Patent Document 6 Korean Patent Publication No. 10-0982649
  • a first object of the present invention is to provide an electrostatic chuck capable of enhancing the lifetime by lowering the porosity of the dielectric layer by forming the dielectric layer of the electrostatic chuck by the sol-gel method and improving the attraction force to the substrate by increasing the dielectric constant and a method of manufacturing the same .
  • a second object of the present invention is to provide a dielectric layer of an electrostatic chuck by first forming a dielectric layer by a sol-gel method and then forming a plurality of protrusions protruding upward from an edge region corresponding to a bottom edge of the substrate in an upper surface of a dielectric layer formed by a sol-
  • the present invention provides an electrostatic chuck capable of maximizing the lifetime of an electrostatic chuck by increasing the mechanical rigidity of protrusions 310 and 240 which are repeatedly in contact with the bottom surface of the substrate by forming the electrodes 310 and 240 by a plasma spraying method, .
  • a method of manufacturing an electrostatic chuck including the steps of: forming a base member of a metal material on a surface of a base member; A method of manufacturing an electrostatic chuck including a dielectric layer (200) having an electrode layer (340) formed thereon, the method comprising: a dielectric layer forming step of forming at least a part of the dielectric layer (200) from a ceramic material by a sol- And forming a plurality of protrusions 310 and 240 in the edge region E corresponding to the bottom edge of the substrate S in the upper surface of the dielectric layer 200 by plasma spraying do.
  • the ceramic material may have any one of Al 2 O 3 , Y 2 O 3 , ZrO 2 , MgO, SiC, AlN, Si 3 N 4 and SiO 2 .
  • the protrusions 310 and 240 may include at least one dam 310 disposed along the edge of the substrate S in the upper surface of the dielectric layer 200 and a center 310 of the dielectric layer 200, And may include a plurality of vertical protrusions 240 which are smaller than the upper surface of the dam 310 and face or come into point contact with the bottom surface of the substrate S.
  • the height of the dam 310 may be smaller than the height of the plurality of vertical protrusions 240.
  • the substrate S is bent downward with respect to the vertical protrusions 240, It is possible to prevent foreign matter from entering.
  • the dam unit 310 includes a gas discharge channel 312 through which gas is discharged from the upper surface of the substrate S in contact with the bottom surface of the substrate S in order to sense a surface contact state of the substrate S with the bottom surface of the substrate S, .
  • the dielectric layer forming step may include forming a first dielectric layer 210 on the upper surface of the base member 330 by plasma spraying, forming an electrode layer 340 on the first dielectric layer 210, And a second dielectric layer forming step of forming a second dielectric layer 220 by the Sol-Gel method.
  • the second dielectric layer forming step may include forming the second dielectric layer 220 in a central region C of the first dielectric layer 210 except for the edge region E
  • the fourth dielectric layer 260 may be formed by plasma spraying in the edge region E of the upper surface of the first dielectric layer 210.
  • an electrostatic chuck according to the present invention is manufactured by the above-described method of manufacturing an electrostatic chuck.
  • an electrostatic chuck includes a base member 330 made of a metal, an electrode layer 340 formed on an upper surface of the base member 330, A dielectric layer 200 formed at least partially from a ceramic material by the Sol-Gel method and an edge region E corresponding to the edge bottom of the substrate S in the upper surface of the dielectric layer 200 by a plasma spraying method. And a plurality of protrusions 310 and 240 protruded upward.
  • protrusions for supporting the edges of the substrate are formed to secure a close contact state at the edges of the substrate, thereby preventing foreign matter such as particles from entering the space between the substrate and the electrostatic chuck.
  • the dielectric layer of the electrostatic chuck is formed by the sol-gel method (Sol-Gel method), thereby lowering the porosity of the dielectric layer to increase the lifetime and increase the dielectric constant to improve the attraction force to the substrate.
  • a layer formed by plasma spraying in a dielectric layer or a layer formed by a sol-gel method is combined to form a layer having a high porosity by a sol-gel method, and mechanical rigidity by plasma spraying is increased to lower the porosity of the dielectric layer, And mechanical rigidity can be ensured.
  • a plurality of protrusions formed on the edge of the dielectric layer formed by the sol-gel method in the dielectric layer is formed by plasma spraying, thereby enhancing the attraction force in the central region and securing the mechanical rigidity of the protrusions formed at the edges.
  • the mask in the case where the mask is brought into close contact with the substrate to perform the substrate processing, the mask is brought into close contact with the substrate by the magnetic force on the electrostatic chuck, thereby improving the adhesion to the mask and the substrate, It is possible to improve the shadow effect in the part.
  • the present invention can maintain the adhesion state of the mask and the substrate well.
  • a gas flow path through which a gas is discharged in a direction toward a substrate in a protrusion formed on an edge is formed, so that the contact state with the substrate or the mask can be sensed based on the leakage amount of gas at the contact surface.
  • FIG. 1 is a sectional view showing an electrostatic chuck according to the prior art
  • FIG. 2A is a partial cross-sectional view illustrating a carrier in which an electrostatic chuck is installed and a mask is coupled according to an embodiment of the present invention
  • FIG. 2B is a partial cross-sectional view showing an embodiment in which the outer frame of the mask is closely attached to the protrusion by the modification of FIG. 2A;
  • FIG. 3 is a partial sectional view showing the height difference between the dam portion and the vertical projection in FIG. 2 A or FIG.
  • FIG. 4 is a partial cross-sectional view illustrating an electrostatic chuck according to an embodiment of the present invention.
  • FIG. 5 is a partial plan view showing an electrostatic chuck according to an embodiment of the present invention.
  • 6A to 6F are cross-sectional views illustrating an embodiment of a method of manufacturing an electrostatic chuck according to an embodiment of the present invention
  • FIG. 7 is a partial cross-sectional view showing an electrostatic chuck according to another embodiment of the present invention.
  • FIG. 8 is a partial plan view showing the electrostatic chuck shown in FIG. 7;
  • FIG. 9 is a partial cross-sectional view showing a modified example of the electrostatic chuck shown in FIG. 7,
  • FIG. 10 is a partial cross-sectional view illustrating an electrostatic chuck according to another embodiment of the present invention.
  • FIG. 2A is a partial sectional view showing a carrier to which an electrostatic chuck is installed and a mask is coupled according to an embodiment of the present invention.
  • FIG. 2B is a cross- FIG. 3 is a partial cross-sectional view showing a height difference between the dam portion and the vertical projection in FIG. 2A or FIG. 2B
  • FIG. 4 is a cross-sectional view showing an electrostatic chuck according to an embodiment of the present invention.
  • FIG. 5 is a partial plan view showing an electrostatic chuck according to an embodiment of the present invention
  • FIGS. 6A to 6F are cross-sectional views showing one embodiment of the method of manufacturing the electrostatic chuck of FIG. Fig.
  • FIG. 8 is a partial plan view showing the electrostatic chuck shown in Fig. 7,
  • Fig. 9 is a partial cross-sectional view showing a modified example of the electrostatic chuck shown in Fig. 7,
  • Fig. 1 0 is a partial cross-sectional view showing an electrostatic chuck according to another embodiment of the present invention.
  • An electrostatic chuck 10 includes an electrostatic chuck 10 for holding a substrate M in a state in which a mask M is in close contact with an upper surface of a substrate S sucked and fixed to the electrostatic chuck 10, (10).
  • the substrate processing apparatus using the electrostatic chuck can be any apparatus that performs processing on a substrate such as a CVD (Chemical Vapor Deposition) apparatus, a sputtering apparatus, an ion implanting apparatus, an etching apparatus, Do.
  • CVD Chemical Vapor Deposition
  • sputtering apparatus a sputtering apparatus
  • ion implanting apparatus a ion implanting apparatus
  • etching apparatus Do.
  • the electrostatic chuck 10 is used in an apparatus for performing a process under a very low pressure atmosphere compared to atmospheric pressure.
  • the electrostatic chuck 10 is preferably used in an evaporation deposition apparatus for forming a deposition layer on a substrate by evaporation material evaporated in an evaporation source, such as an OLED substrate.
  • the electrostatic chuck 10 is a constituent element for generating an electrostatic force for attracting and fixing the substrate S, and can be variously designed.
  • the electrostatic chuck 10 includes a base member 330 made of a metal, a dielectric layer 200 formed on the upper surface of the base member 330 and having an electrode layer 340 to which DC power is applied, . ≪ / RTI >
  • the base member 330 is made of a metal such as aluminum or stainless steel to secure mechanical rigidity.
  • the base member 330 may have various materials and structures according to the use conditions.
  • the dielectric layer 200 is formed on the upper surface of the base member 330 and has an electrode layer 340 to which DC power is applied.
  • the electrode layer 340 is formed of a material such as tungsten in the dielectric layer 200 and is electrically connected to a DC power source to generate an electrostatic force by combination with the dielectric layer 340 by application of DC power.
  • the electrode layer 340 may be formed by various methods such as a plasma spraying method, a conductive paste printing method using a silk screen, or the like.
  • the electrode layer 340 may be formed of one or more kinds depending on the adsorption method of the substrate S and may have various structures such as Bi-Polar and Uni-Polar.
  • the dielectric layer 200 may be formed of at least one of a plasma spraying method and a Sol-Gel method from a ceramic material, which is a component having a dielectric constant so as to generate an electrostatic force by application of DC power to the electrode layer 340 .
  • the ceramic material may have a material such as Al 2 O 3 , Y 2 O 3 , ZrO 2 , MgO, SiC, AlN, Si 3 N 4 , SiO 2 and the like.
  • particles may flow into the upper surface of the substrate S and the electrostatic chuck 10 to contaminate the back surface of the substrate S, Lt; / RTI >
  • the electrostatic chuck 10 includes a protrusion (not shown) protruding upward to support the bottom of the edge of the substrate S, 310, < / RTI >
  • the protrusions 310 and 240 may include at least one dam 310 and a plurality of vertical protrusions 240 having a second height H 1 lower than the first height H 1 of the dam 310 May be formed on the upper surface of the dielectric layer 200.
  • the dam portion 310 may be formed by a plasma spraying method or the like on the upper surface of the dielectric layer 200 when the dielectric layer 200 is formed as a component supporting the bottom of the edge of the substrate S.
  • the dam portion 310 is formed as a closed curve such as a rectangle on the upper surface of the electrostatic chuck 10 corresponding to the edge of the substrate S as shown in FIG.
  • the first height H 1 of the dam 310 is formed to be higher than the second height H 1 of the vertical protrusions 240 formed on the inner side to support the edge of the edge of the substrate S.
  • the edge of the substrate S is bent by the formation of the dam 310 to be supported by the dam 310 to prevent the particles from flowing into or out of the boundary of the dam 310.
  • the plurality of vertical protrusions 240 may be selectively formed on the upper surface of the electrostatic chuck 10 so that the substrate S may be spaced apart from the upper surface of the substrate.
  • the first height H 1 of the edge dam 310 may be formed at an appropriate height in a range where the substrate S is not damaged when the plurality of vertical protrusions 240 are not formed on the electrostatic chuck 10 .
  • the dam 310 supports the bottom surface of the substrate S.
  • the dam 310 may be formed to support the bottom surface of the mask M as shown in FIG. 2B.
  • FIG. 2A the same reference numerals as in FIG. 2A are used for the explanation of the bottom surface of the mask M in the embodiment shown in FIG. 2B.
  • the edge of the substrate S is located inside the dam 310.
  • the dielectric layer 200 is generally formed by a plasma spraying method in order to process a large-sized substrate.
  • the plasma spraying method has a high porosity such as formation of voids and porosity, The period is short, and further, the dielectric constant is low and the attraction force to the substrate S is low.
  • the present invention in forming the dielectric layer 200, can be formed by a sol-gel method from a ceramic material and can be formed by a combination of plasma spraying and Sol- have.
  • the porosity can be lowered to improve the withstand voltage characteristics and the lifetime, and the dielectric constant can be increased to improve the attraction force with respect to the substrate S.
  • the sol-gel method may be a sol-gel method widely known as a method of forming the dielectric layer 200, for example, by the following process.
  • the Sol-Gel method can produce a homogeneous inorganic oxide material having good properties such as hardness, transparency, chemical stability, controlled pore and thermal conductivity at room temperature.
  • a special method has been applied to obtain a monolith, a thin film, and a single size powder by shaping the gel state into various shapes by applying the sol-gel process.
  • This method can make a protective film, a porous film, a window insulator, a dielectric material, and an electronic material coating, and can improve the performance of the electrostatic chuck 10 remarkably.
  • the sol-gel method can be used to synthesize gel by measuring the particle size distribution according to pH change through synthesis of alumina and selecting Ph when the particle size is the smallest.
  • it can be sintered at a relatively low temperature such as 150 after the molding by the sol-gel method.
  • the dielectric layer 200 includes a first dielectric layer 210 formed on the upper surface of the base member 330 by plasma spraying, and an electrode layer 340 formed on the first dielectric layer 210,
  • the dam portion 310 and the vertical protrusions 240 may be formed by plasma spraying after the second dielectric layer 220 is formed.
  • the first dielectric layer 210 may also be formed by the Sol-Gel method instead of the plasma spraying method.
  • the third dielectric layer 230 may be further formed on the second dielectric layer 220 by plasma spraying after the second dielectric layer 220 is formed.
  • the mechanical rigidity can be secured.
  • the electrostatic chuck 10 may be used as a carrier itself or a part of a component moved in a substrate processing apparatus such as an evaporation deposition apparatus as an element for sucking and fixing a substrate S .
  • the carrier is a component that is moved with the electrostatic chuck provided thereon to hold the substrate S by suction.
  • the carrier may have a variety of structures by moving the substrate processing apparatus or the like.
  • the carrier moves in a state in which the substrate S is fixed to the bottom surface so as to face downward, or the carrier S moves in a vertical or inclined state such that the substrate S faces the lateral direction,
  • the carrier can be moved by the moving method.
  • the electrostatic chuck 10 is further provided with a carrier frame 11 coupled to the edge to further transfer the substrate S in a state of sucking and fixing the substrate S in the substrate processing system performing the substrate processing A carrier can be formed.
  • the mask (M) may be adhered to the substrate (S) in close contact with the substrate (S) in accordance with the substrate processing step.
  • the mask M may have a variety of configurations including a sheet 31 having one or more openings 33 formed as a component for closely adhering to the substrate S and forming a vapor-deposited film on the substrate S in a designed pattern in advance .
  • the mask M may comprise a mask sheet 31 formed with one or more openings 33 formed in a predetermined pattern, and an outer frame 32 supporting the edges of the mask sheet 31 have.
  • the mask M may have various configurations according to processes such as an FMM (fine metal mask) in which an aperture is formed in units of pixels, and an Open Mask in a state of being closely adhered to the substrate S.
  • FMM fine metal mask
  • the electrostatic chuck 10 includes a magnet M that closely contacts the upper surface of the substrate S by a magnetic force, (12) is further provided to improve the adhesion of the mask (M) to the substrate (S).
  • the magnet 12 is constituted by a permanent magnet or the like and can be installed at an appropriate position as a constituent element provided on the electrostatic chuck 10 and closely contacting the mask M to the upper surface of the substrate S by a magnetic force.
  • the uniformity of the process at the edge of the substrate S and the shadow effect can be improved by improving the adhesion of the mask M to the substrate S at the edge of the substrate S by the magnet 12.
  • the magnet 12 may be installed on the bottom surface of the base member 330 constituting the electrostatic chuck 10.
  • the magnet 12 can be brought into close contact with the upper surface of the electrostatic chuck 10 by the magnetic force when the mask M has the outer frame 32.
  • the mask sheet 31 of the mask M is preferably adhered to the substrate S.
  • the magnet sheet 12 is positioned so as to adhere the mask sheet 31 to the upper surface of the electrostatic chuck 10 by a magnetic force desirable.
  • the dielectric layer of the electrostatic chuck is formed by the sol-gel method or the combination of the plasma spraying method and the sol-gel method as described above.
  • a method of manufacturing an electrostatic chuck having the above-described structure wherein at least a part of the dielectric layer 200 is formed from a ceramic material by the Sol-Gel method .
  • the dielectric layer 200 may be formed from a ceramic material by a combination of plasma spraying and Sol-Gel method.
  • the dielectric layer 200 is formed from a ceramic material by the Sol-Gel method, and it is more preferable that the dielectric layer 200 is formed by combination of plasma spraying and Sol-Gel method.
  • the porosity can be lowered to improve the withstand voltage characteristics, increase the lifetime, and increase the dielectric constant, thereby improving the attraction force with respect to the substrate S.
  • a method of fabricating an electrostatic chuck according to the present invention includes forming a first dielectric layer 210 on a top surface of a base member 330 by plasma spraying, forming a first dielectric layer 210 on the first dielectric layer 210, A second dielectric layer forming step of forming a second dielectric layer 220 by a sol-gel method after the electrode layer 340 is formed, and a second dielectric layer forming step of forming the protrusions 310 and 240 by plasma spraying after the formation of the second dielectric layer 220.
  • the electrostatic chuck 10 is different from the embodiment in which a plurality of vertical protrusions 240 are uniformly formed on the upper surface of the electrostatic chuck 10 on the upper surface,
  • the protrusions 310 and 240 are formed only in the edge region E corresponding to the bottom edge of the substrate S and the protrusions 310 and 320 are formed on the center bottom surface of the substrate S as in the embodiment shown in FIG. 240 may not be formed.
  • the plurality of protrusions 310 and 240 formed in the edge region E excluding the central bottom of the substrate S must have high durability as it repeatedly contacts with the bottom surface of the substrate S according to the process.
  • the durability is improved by forming the plurality of protrusions 310 and 240 formed in the edge region E by the plasma spraying method because the porosity is high but the durability is weak.
  • a method of manufacturing an electrostatic chuck according to the present invention includes a dielectric forming step of forming at least a part of a dielectric layer 200 from a ceramic material by a Sol-Gel method, a dielectric layer 200 Forming a plurality of protrusions 310 and 240 in an edge region E corresponding to a bottom edge of the substrate S in the upper surface of the substrate S by a plasma spraying method.
  • the dielectric forming step may be substantially the same as or similar to the method of manufacturing the electrostatic chuck described with reference to FIGS. 2A to 6E as a step of forming at least a part of the dielectric layer 200 by a sol-gel method from a ceramic material, Is omitted.
  • the dielectric forming steps may be substantially the same or similar except for the protruding portion forming step in the manufacturing method of the electrostatic chuck described with reference to FIGS. 2A to 6E, and a detailed description thereof will be omitted.
  • the dielectric forming step may include forming a first dielectric layer 210 on the upper surface of the base member 330 by plasma spraying, forming an electrode layer 340 on the first dielectric layer 210, And a second dielectric layer forming step of forming the second dielectric layer 220 by a Geel method.
  • the step of forming protrusions is a step of forming a plurality of protrusions 310 and 240 in the edge region E corresponding to the bottom edge of the substrate S in the upper surface of the dielectric layer 200 formed in the dielectric layer forming step by the plasma spraying method .
  • the protrusions 310 and 240 may include at least one dam 310 disposed along the edge region E of the upper surface of the dielectric layer 200 and at least one dam 310 extending from the dam 310 toward the center of the dielectric layer 200 And may include a plurality of vertical protrusions 240 disposed along the edge region E.
  • the dam 310 and the vertical protrusion 240 constituting the protrusions 310 and 240 are formed by the plasma spraying method.
  • the mechanical rigidity, particularly the durability, of the protrusions 310 and 240 can be assured.
  • the projections 310 and 240 are formed only in the edge region E except for the top surface central region C of the dielectric layer 200.
  • the dam portion 310 is formed along the outermost edge of the edge region E, and the vertical protrusion 240 has an edge region E on the inner side facing the center of the dielectric layer 200 with respect to the dam portion 310 And can be arranged in plural.
  • the vertical surface 240 of the top surface central region C of the dielectric layer 200 is not formed so that the bottom surface of the substrate S and the dielectric layer 200 can be completely in contact with each other.
  • the substrate S is completely adhered to the dielectric layer 200 in the top surface central region C of the dielectric layer 200 so that the dam portion 310 is vertically exposed to the process environment or the particles It is preferable that the protrusion 240 is formed at a lower height than the protrusion 240.
  • the electrostatic chuck 10 performs substrate processing in a state in which the mask M is adhered to the upper surface of the substrate S sucked and fixed to the electrostatic chuck 10, so that the substrate S or mask M).
  • the dam part 310 includes a gas discharge channel 312 through which gas is discharged on the upper surface in surface contact with the bottom surface of the substrate S .
  • the gas flow path 312 is a gas supply device installed in the carrier frame 11 to which the electrostatic chuck 10 or the electrostatic chuck 10 is coupled as a flow path of a gas such as an inert gas such as helium toward the substrate S (Not shown).
  • the top surface central region C of the dielectric layer 200 formed by the sol-gel method and completely adhered to the bottom surface of the substrate S is formed such that the center line average roughness Ra is in the range of 1.5a to 3.5a .
  • the protrusions 310 and 240 cause maintenance and repair of the electrostatic chuck 10, such as abrasion occurring due to repeated contact with the bottom surface of the substrate S.
  • At least a part of the protrusions 310 and 240 may be formed on one or more sheet members 250 and then attached to corresponding positions A portion of the protrusions 310 and 240 which is worn can be constituted by a new sheet member 250.
  • the step of forming protrusions may include the steps of forming at least a portion of the protrusions 310 and 240 on the sheet member 250 and forming a sheet member 250 on which at least a part of the protrusions 310 and 240 is formed, To the upper surface of the substrate.
  • protrusions 310 and 240 are formed on the sheet member 250, and the protrusions 310 and 240 are formed by the plasma spraying method.
  • the sheet member 250 preferably has a ceramic material.
  • the sheet member 250 may be coated with an adhesive on the bottom surface or may be formed of an adhesive tape itself so that the sheet member 250 can be easily attached to the ceramic dielectric layer 200.
  • the protrusions 310 and 240 are formed on the sheet member 250 by the sheet member 250 and attached to the upper surface of the dielectric layer 200 so that when maintenance of the protrusions 310 and 240 is required, Only the sheet member 250 on which the electrostatic chucks 310 and 240 are formed can be replaced, so that maintenance and repair of the electrostatic chuck 10 can be facilitated.
  • the dielectric layer formed on the top of the dielectric layer 200 is formed by a sol-gel method on the central region C excluding the edge region E of the substrate S, .
  • the dielectric layer 200 may include a fourth dielectric layer 260 formed by plasma spraying corresponding to an edge region E where no dielectric layer is formed on the uppermost portion of the dielectric layer 200.
  • protrusions 310 and 240 may be formed by plasma spraying.
  • the fourth dielectric layer 260 is preferably formed at the same height as the dielectric layer formed on the top of the dielectric layer 200.
  • the dielectric layer formed on the top of the dielectric layer 200 may correspond to the third dielectric layer 230 in FIG. 10, but is not limited thereto.
  • the second dielectric layer 220 may be formed on the top of the central region C except for the edge region E of the substrate S.
  • the third dielectric layer 230 may be formed by any one of a sol-gel method and a plasma spray method.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention comprend : un élément de base (330) constitué d'un matériau métallique ; et une couche diélectrique (200) formée sur la surface supérieure de l'élément de base (330) et possédant des couches d'électrode (340), formées en son sein, auxquelles une puissance en courant continu est appliquée, une partie de barrage (310) destinée à soutenir la surface inférieure du bord d'un substrat (S) étant formée sur la surface supérieure de la couche diélectrique (200), réduisant ainsi la porosité de la couche diélectrique et augmentant la durée de vie, et permettant que l'adhérence du substrat soit améliorée au moyen de l'augmentation d'une constante diélectrique.
PCT/KR2017/009890 2016-09-08 2017-09-08 Mandrin électrostatique et son procédé de fabrication WO2018048254A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201780051392.6A CN109891570A (zh) 2016-09-08 2017-09-08 静电卡盘及其制造方法
JP2019510454A JP2019530211A (ja) 2016-09-08 2017-09-08 静電チャック、及びその製造方法

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KR10-2016-0115780 2016-09-08
KR1020160115780A KR101694754B1 (ko) 2016-09-08 2016-09-08 정전척 및 그 제조방법

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KR (1) KR101694754B1 (fr)
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KR20190106119A (ko) * 2018-03-07 2019-09-18 어플라이드 머티어리얼스, 인코포레이티드 부분적으로 전극이 형성된 바이폴라 정전척
JP7441403B2 (ja) * 2019-03-05 2024-03-01 Toto株式会社 静電チャック、および処理装置
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR20210044074A (ko) * 2019-10-14 2021-04-22 세메스 주식회사 정전 척과 이를 구비하는 기판 처리 시스템 및 정전 척의 제조 방법
TWI765518B (zh) * 2021-01-07 2022-05-21 財團法人工業技術研究院 靜電吸盤及其製備方法
CN114649252A (zh) * 2022-03-17 2022-06-21 苏州众芯联电子材料有限公司 一种用于lcd/oled面板设备的双电极静电卡盘的制作工艺

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JP2019530211A (ja) 2019-10-17
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CN109891570A (zh) 2019-06-14

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