WO2018035964A1 - 一种导电薄膜材料残余应力的在线测量方法及测量装置 - Google Patents

一种导电薄膜材料残余应力的在线测量方法及测量装置 Download PDF

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WO2018035964A1
WO2018035964A1 PCT/CN2016/104186 CN2016104186W WO2018035964A1 WO 2018035964 A1 WO2018035964 A1 WO 2018035964A1 CN 2016104186 W CN2016104186 W CN 2016104186W WO 2018035964 A1 WO2018035964 A1 WO 2018035964A1
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measuring
driving electrode
driving
voltage
measuring member
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French (fr)
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顾一帆
周再发
黄庆安
李伟华
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Southeast University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/0047—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes measuring forces due to residual stresses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N3/08—Investigating strength properties of solid materials by application of mechanical stress by applying steady tensile or compressive forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0058—Kind of property studied
    • G01N2203/0069—Fatigue, creep, strain-stress relations or elastic constants
    • G01N2203/0075—Strain-stress relations or elastic constants

Definitions

  • the invention relates to the field of on-line measurement of conductive films, in particular to the field of measuring the residual stress of conductive film materials on-line.
  • the performance of MEMS devices is closely related to the physical parameters of the materials, and the physical parameters of the materials used to fabricate MEMS devices are related to the manufacturing process. That is, the manufacturing process of the material is different, and the physical parameters will also be different.
  • the purpose of online measurement is to measure the physical parameters of MEMS materials manufactured by a specific process in real time.
  • the basic material of a microelectromechanical device structure is typically a thin film material, typically prepared by chemical vapor deposition (CVD).
  • Residual stress is an important physical parameter of the material and has a significant impact on the performance of the MEMS device.
  • the residual stress can be measured offline by a special instrument by making a measurement sample.
  • the offline measurement method cannot obtain the physical parameters of the material in real time, and will increase the measurement cost.
  • manufacturers of MEMS products want to be able to perform on-line measurements through a common measuring instrument within the process line, while reflecting process control levels. Therefore, online measurement becomes a necessary means of process monitoring.
  • the measurement of Young's modulus is usually obtained by applying a voltage to generate an electrostatic force to drive the beam structure to cause a Pull-in phenomenon.
  • the measurement of residual stress requires an additional measurement structure.
  • On-line measurements usually require special structures and calculations to extract the physical parameters of the material.
  • the electrical parameters of the material can be obtained by using electrical excitation and electrical measurement methods, by measuring the electrical quantity and then with the targeted calculation method.
  • the measurement structure is usually designed only for the tensile stress state or only for the compressive stress state, and cannot be measured under unknown material parameters, the magnitude of the unknown residual stress, and the positive and negative (tension or compressive stress).
  • the invention proposes a set of measurement structures and a calculation method of the conductive thin residual stress of the MEMS, and performs simple voltage scanning on the measurement structure on the basis of unknown material parameters.
  • the Pull-in voltage is excited and measured, and the corresponding voltage measured is substituted into the calculation formula.
  • the structural correlation is used to eliminate the influence of other parameters, and the residual stress and Young's modulus of the conductive film material of the MEMS can be finally obtained.
  • This method is equally applicable to compressive or tensile stresses and is not limited to processing conditions.
  • an object of the present invention is to provide an on-line measurement method and a measuring device for residual stress of a micro-electro-mechanical systems (MEMS) conductive film material.
  • the Pull-in phenomenon is generated by electrostatically driving the material to be tested.
  • the unknown material parameters, the magnitude of the unknown residual stress, and the positive and negative In the case of (tensile stress or compressive stress) were measured by calculation.
  • the first measuring member (104-1) having a length L1, a width W, and a thickness H is mounted above the first driving electrode (103-1), and has a length L2 and a width W.
  • a second measuring member (104-2) having a thickness H is mounted above the second driving electrode (103-2);
  • a slowly increasing driving voltage is applied to the first driving electrode (103-1), and the resistance value between the first driving electrode (103-1) and the first measuring member (104-1) is monitored in real time.
  • the resistance value jump between the first driving electrode (103-1) and the first measuring member (104-1) becomes a finite value (ie, a pick-up phenomenon occurs)
  • the first driving electrode of the jumping instant is recorded (103- 1)
  • the applied driving voltage is the first pull-in voltage UPI1;
  • a slowly increasing driving voltage is applied to the second driving electrode (103-2), and the resistance value between the second driving electrode (103-2) and the second measuring member (104-2) is monitored in real time,
  • the resistance value jump between the second driving electrode (103-2) and the second measuring member (104-2) becomes a finite value (ie, a pick-up phenomenon occurs)
  • the second driving electrode of the jumping instant is recorded (103- 2)
  • the applied driving voltage is the second pull-in voltage UPI2;
  • the quasi-static energy method is respectively performed on the first measuring part and the second measuring part.
  • ⁇ e is the dielectric constant of air
  • w is the width of the measuring member
  • U is the applied voltage
  • g 0 is the thickness of the air gap between the measuring member and the driving electrode
  • x is the position in the longitudinal direction of the measuring member
  • l To measure the total length of the piece
  • z is the position in the thickness direction of the measuring piece
  • ⁇ 0 is the residual stress
  • E is the Young's modulus
  • ⁇ (x) is the deflection function
  • c is the amplitude value, ie the center position of the measuring piece Deflection
  • the width W of the first and second measuring members is brought into the width w of the test piece, and the first pull-in voltage UPI1 and the second pull-in voltage UPI2 are respectively brought into the applied voltage U, and the length L1 of the first measuring member is The length L2 of the second measuring member is respectively brought into the total length l of the measuring member;
  • the subscript 1 represents the equation obtained by the formula of the fourth step brought into the parameter of the first measuring component
  • the subscript 2 represents the equation obtained by the formula of the fourth step brought into the parameter of the second measuring component; according to the initial driving voltage 0
  • the initial deflection of the center of the measuring piece is: Solving the above-mentioned partial differential equations yields the residual stress ⁇ 0 and the Young's modulus E.
  • the measuring device corresponding to the measuring method of the present invention has two measuring devices
  • the double-end fixed beam measuring unit made of polysilicon material is composed of a first measuring unit and a second measuring structural unit respectively;
  • the first measuring unit is composed of a first driving electrode (103-1), a first measuring member (104-1) and three anchor regions disposed on the substrate, and metal electrodes are respectively disposed on the three anchor regions, where The three anchor regions are respectively labeled as C, A, A'; the first driving electrode (103-1) is T-shaped, and the three anchor regions are respectively disposed at three ends of the first driving electrode (103-1).
  • the first driving anchor region C located on the axis of symmetry of the first driving electrode (103-1) is electrically connected to the first driving electrode (103-1), and the first driving electrode (103-1) is symmetrically disposed at both ends.
  • both ends of the first measuring component (104-1) are erected in the first grounding anchor zone A
  • the second ground anchor zone A' constitutes a double-ended fixed beam
  • the first measuring member (104-1) is located above the first driving electrode (103-1)
  • the first measuring member (104-1) and the first There is a fixed interval of air gap (105) between a driving electrode (103-1);
  • the second measuring unit has the same structure as the first measuring unit, and the two measuring units differ only in the lengths of the driving electrodes and the measuring members. Depending on the selection process, materials, etc., the dimensions of the measuring parts are also different. In order to prevent the required suction voltage from being too high, or the excessively long double-ended fixed beam is collapsed and adhered, two measuring parts are usually used.
  • the length is selected to be any value from 50 to 300 microns.
  • the substrate is composed of a semiconductor silicon material in which silicon dioxide and silicon nitride are deposited on the upper surface of the substrate, and the bottom layer and the driving electrode for driving the anchor region and the ground anchor region are all made of a conductive thin film material.
  • the upper layer and the double-end fixed beam of the driving anchor zone and the grounding anchor zone are all composed of the conductive film material 2
  • the metal electrode is covered on the upper surface of the driving anchor zone and the grounding anchor zone by a stripping process.
  • the conductive film material 1 and the conductive film material 2 are doped polysilicon or metal; the metal electrode material is gold or aluminum.
  • the conductive thin film material 1 is a polycrystalline silicon Poly0 deposited on a substrate and having a thickness of 500 nm; the conductive thin film material 2 is a polycrystalline silicon Poly1 having a thickness of 2000 nm, and polycrystalline silicon. Poly1 is doped with an N-type doping concentration of 50 ohms/square.
  • the invention comprises a set of measuring structures by two double-ended fixed beams. Since the two measuring units in the measuring structure have the same structure, only the lengths of the driving electrodes and the measuring members are different. Moreover, the variables of the two measuring parts that may affect the result due to the identical process conditions are design values with controllability, and the parameters of the two are related.
  • the measurement method provided by the invention fully utilizes the correlation between the parameters of the two measuring components, and strictly controls other parameters between the measuring units, so that the required material parameters can be directly obtained by solving the partial differential equations. Separate measurements are not required for the residual stress species (tension, compressive stress) and Young's modulus of the material.
  • the present invention since the measurement structure driven by the electrostatic force is fully utilized by the correlation generated by the synchronous processing, the present invention only needs two measurement units having substantially the same structure to measure the specific residual stress type without distinguishing the residual stress types and size. It has simple measurement structure and measurement method, low requirements for measuring equipment, simple loading and measurement of electrical signals, calculation method is limited to simple mathematical equations, and the calculation method is simple and stable.
  • the processing of the measuring unit is synchronized with the microelectromechanical device (MEMS), and there is no special processing requirement, which fully meets the requirements of the online test. While ensuring the real-time performance of the measurement results, the present invention simplifies the measurement process and is more efficient in measurement.
  • MEMS microelectromechanical device
  • Figure 1 is a schematic view showing the structure of a measuring device of the present invention
  • Figure 2 is a layout used in the processing of the measuring device of the present invention
  • Figure 3 is a schematic view showing the buckling of the measuring structure under the action of compressive stress
  • FIG. 1 is a schematic structural view of a measuring device of the present invention, which is composed of two double-ended fixed beam measuring units made of polysilicon material, which are respectively a first measuring unit and a second measuring structural unit;
  • the first measuring unit is disposed at a first driving electrode (103-1), a first measuring member (104-1) and three anchor regions on the substrate, three metal regions are respectively disposed on the three anchor regions, and three anchor regions are respectively marked as C, A, A';
  • the first driving electrode (103-1) is T-shaped, and three anchor regions are respectively disposed at three ends of the first driving electrode (103-1), wherein only the first driving electrode is located ( 103-1)
  • the first driving anchor region C on the axis of symmetry is electrically connected to the first driving electrode (103-1), and the first grounding anchor region A and the second symmetrically disposed at both ends of the first driving electrode (103-1)
  • the dimensions of the measuring parts are also different.
  • two measuring parts are usually used.
  • the length is selected to be any value from 50 to 300 microns.
  • CMOS-compatible process step 2 is a layout used in the processing of the measuring device of the present invention, and the process flow is exemplified by a CMOS-compatible process step:
  • step 2 a layer of 2000 nm thick phosphorous silica glass (PSG) is deposited on the entire silicon wafer as a sacrificial layer (precipitation is also performed on the electrode structure of the previous step), and three processes are formed by photolithography.
  • the anchor pattern is then etched to form an empty slot of the three anchor regions on the sacrificial layer, and the three anchor regions are overlapped on the underlying pattern of the three anchor regions composed of Poly0 in step 2, as shown by b in FIG. ;
  • the purpose of the sacrificial layer is to let a part of the structure of Poly1 fall behind, and finally release the sacrificial layer to obtain a floating Poly1 structure.
  • a low-voltage chemical vapor deposition process is used to deposit a layer of polycrystalline silicon Poly1 with a thickness of 2000 nm, and the polysilicon is doped with N-type doping.
  • the doping concentration is controlled at about 50 ohms/square, and then all the measured structure patterns are formed by photolithography.
  • the Poly1 anchor region (101) falling in the three anchor zone slots in step 3, and the Poly1 beam structure (i.e., measuring member 104) falling over the sacrificial layer are included.
  • the Poly1 double-end fixed beam structure (104) left by the etching is connected to the two grounding anchor regions, and is separated from the driving anchor region, as shown in c in FIG. 2;
  • the metal electrode (102) is formed using a lift-off process, as shown by d in FIG.
  • a is the bottom layer, and the graphics in c are superimposed on a.
  • the sacrificial layer b In order to fix both sides of the double-ended fixed beam in c and the middle is overhead, it is necessary to sandwich the sacrificial layer b between a and c.
  • An empty slot 2 is engraved on the sacrificial layer b to expose three square patterns covering a below.
  • the three squares in c can be connected to the three squares in a, and the one of the beams in c (ie the double-ended fixed beam structure, that is, the measuring piece) falls on the sacrificial layer, and the sacrificial layer Didn’t open it, because After the sacrificial layer is released, the measuring piece in c becomes suspended.
  • a metal electrode is formed on the three anchor regions by a stripping process to facilitate energization during measurement.
  • FIG. 3 is a schematic view showing the buckling of the measured structure under compressive stress according to the present invention.
  • the compressive stress in the film material reaches a certain value, the buckling phenomenon occurs under the action of compressive stress on the double-ended fixed beam after the release of the sacrificial layer. If the compressive stress in the film material does not reach the critical value of buckling, or the stress in the film material is tensile stress, the double-ended fixed beam is still flat after release.
  • the method for measuring the residual stress of the conductive film material in the present invention is applicable, and can be solved under the condition of unknown residual stress, and the residual stress according to the result
  • the positive and negative states give the property of residual stress.
  • the first measuring piece (104-1) having a length L 1 , a width W, and a thickness H is obtained by the first step, and passes through the first grounding anchor.
  • the region A and the second ground anchor region A' (101) are fixed above the first driving electrode (103-1), and the thickness of the air gap (105) between the measuring member and the driving electrode is g 0 .
  • the second measuring member (104-2) is fabricated using the same process, and is fixed to the second driving electrode (103-2) through the first grounding anchor region B and the second grounding anchor region B' of the second measuring unit. Above.
  • the difference between the second measuring member and the first measuring member is only the length, and the length of the second measuring member is L 2 .
  • the second step applies a slowly increasing driving voltage to the first driving electrode (103-1) through the electrodes on the first driving anchor region C, respectively, while passing the second driving.
  • the electrode on the anchor region D applies a slowly increasing driving voltage to the second driving electrode (103-2).
  • the resistance value between the first driving electrode (103-1) and the first measuring member (104-1) is measured, while the second driving electrode (103-2) and the second measuring member (104-2) are measured.
  • the resistance value between the two that is, the AC resistance value and the BD resistance value.
  • both the A-A' terminal and the B-B' terminal are grounded (0V), and the C- and D-terminals are connected to a slowly increasing voltage sweep signal for excitation.
  • the double-ended fixed beam ie, the measuring member
  • the resistance value between AC or BD should be infinite at this time.
  • the driving scan voltage is increased to a certain value, the Pull-in phenomenon occurs due to the electrostatic force between the measuring member and the lower driving electrode, at which time the resistance will jump from infinity to a finite value.
  • the driving voltage applied to the first driving electrode (103-1) at the moment of the jumping is recorded.
  • the first pull-in voltage U PI1 similarly, when the resistance value jump between the second drive electrode (103-2) and the second measuring member becomes a finite value, the second drive electrode of the jump instant is recorded (103- 2)
  • the driving voltage applied on the second is U PI2 ;
  • a quasi-static energy method is performed on the first measuring part and the second measuring part respectively:
  • ⁇ e is the dielectric constant of air
  • w is the width of the measuring member
  • U is the applied voltage
  • g 0 is the thickness of the air gap between the measuring member and the driving electrode
  • x is the position in the longitudinal direction of the measuring member
  • l To measure the total length of the piece
  • z is the position in the thickness direction of the measuring piece
  • ⁇ 0 is the residual stress
  • E is the Young's modulus
  • ⁇ (x) is the deflection function
  • c is the amplitude value, ie the center position of the measuring piece Deflection; bringing the width W of the first and second measuring members into the width w of the test piece, bringing the first pull-in voltage U PI1 and the second pull-in voltage U PI2 into the applied voltage U, respectively, and the first measuring piece
  • the length L 1 and the length L 2 of the second measuring member are respectively brought into the total length l of the measuring member, whereby the total strain energy P 1 of the first measuring member and the total
  • the deflection of the initial center position of the measuring piece is obtained according to the initial driving voltage being 0: Solving the calculation of the partial differential equations yields the residual stress ⁇ 0 and the Young's modulus E.
  • the residual stress ⁇ 0 and the Young's modulus E there are only two unknowns, namely the residual stress ⁇ 0 and the Young's modulus E, and the equation has one and only a unique set of solutions.
  • the residual stress ⁇ 0 and Young's modulus E can be obtained by solving the partial differential equations by numerical methods. Obviously, this method has no special processing requirements and can be used in the presence of tensile stress or compressive stress, which fully meets the requirements of online testing.
  • the technical scheme of the present invention limits the correlation parameters of the total strain energy of the two measuring members by using the correlation of the parameters of the two measuring members, and then obtains the relevant parameters of the total strain energy of the two measuring members by using the two measuring members obtained by the synchronous processing, and then obtains the common solution method of the partial differential equations.
  • Such a measurement method does not require selecting different measuring mechanisms for different residual stresses, but determines the kind of residual stress by calculating the positive and negative of the residual stress ⁇ 0 .
  • the steps of measurement and calculation are simplified, and only the corresponding pull-in voltage can be obtained by electric excitation, and the measurement efficiency is higher.

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Abstract

一种导电薄膜材料（1）残余应力的在线测量方法及其对应的测量装置。利用静电驱动Pull-in(吸合)原理设计测量结构，并通过采用同步加工控制两个测量件（104-1、104-2）的参数的关联性，通过限制两个测量件（104-1、104-2）总应变能的相关参数，进而约束其总应变能的偏微分方程组，通过求解偏微分方程组的方式得到两测量件（104-1、104-2）未知的残余应力σ 0和杨氏模量E数值。

Description

一种导电薄膜材料残余应力的在线测量方法及测量装置 技术领域
本发明涉及导电薄膜在线测量领域，尤其涉及在线测量导电薄膜材料残余应力的测量领域。
背景技术
微机电器件的性能与材料物理参数有密切的关系，而制造微机电器件的材料物理参数又与制造工艺过程有关。即材料的制造工艺过程不同，其物理参数也将不同。在线测量目的就在于实时地测量由具体工艺制造的微机电材料物理参数。
微机电器件结构的基本的材料通常是薄膜材料，通常通过化学气相沉积(CVD)方法制备得到。残余应力是材料的重要物理参数，对微机电器件的性能有着显著的影响。通常，残余应力可以通过制作测量样品由专门的仪器进行离线测量。但离线测量方法无法实时得到材料的物理参数，并且会提高测量成本。因而，微机电产品的制造厂商希望能够在工艺线内通过通用的测量仪器进行在线测量，以及时反映工艺控制水平。因此，在线测量成为工艺监控的必要手段。
传统的方法中，为了测得材料的残余应力，首先需要测得材料的杨氏模量。杨氏模量的测量通常通过施加电压产生静电力来驱动梁结构发生Pull-in(吸合)现象而得到。而残余应力的测量则需要额外的测量结构。在线测量通常需要通过特殊的结构和计算以提取材料的物理参数。采用电学激励和电学测量的方法，通过测量得到电学量再配合有针对性的计算方法，才能能够得到材料的物理参数。但是测量结构通常只针对张应力状态或者只针对压应力状态而设计，无法在未知材料参数、未知残余应力的大小和正负(张应力或压应力)情况下进行测量。
本发明提出了一组测量结构和一种微机电系统导电薄残余应力的计算方法，在未知材料参数的基础下，对测量结构进行简单的电压扫描 激励并测量Pull-in(吸合)电压，将测量得到的相应电压代入计算公式，利用结构关联性消去其他参数影响，即可最终得到微机电系统导电薄膜材料的残余应力及杨氏模量。这种方法对于压应力或张应力同样适用，不受限制于加工工艺条件。
发明内容
为了解决现有技术存在的不足，本发明的目的在于提供一种微机电系统(Micro-Electro-Mechanical Systems,MEMS)导电薄膜材料残余应力的在线测量方法及测量装置。通过静电驱动待测材料产生Pull-in(吸合)现象，通过对一组简单的双端固支梁Pull-in(吸合)电压测量，在未知材料参数、未知残余应力的大小和正负(张应力或压应力)情况下，通过计算测得导电薄膜材料的残余应力及杨氏模量。
首先，为实现上述目的，提出一种导电薄膜材料残余应力的测量方法，其特征在于，步骤如下：
第一步，将长度为L1、宽度为W、厚度为H的第一测量件(104-1)安装在第一驱动电极(103-1)的上方，将长度为L2的、宽度为W、厚度为H的第二测量件(104-2)安装在第二驱动电极(103-2)的上方；
第二步，向第一驱动电极(103-1)施加缓慢增大的驱动电压，并实时监测第一驱动电极(103-1)与第一测量件(104-1)之间的电阻值，当第一驱动电极(103-1)与第一测量件(104-1)之间的电阻值跳变为有限值时(即发生吸合现象)，记录跳变瞬间第一驱动电极(103-1)上所施加的驱动电压为第一吸合电压UPI1；
第三步，向第二驱动电极(103-2)施加缓慢增大的驱动电压，并实时监测第二驱动电极(103-2)与第二测量件(104-2)之间的电阻值，当第二驱动电极(103-2)与第二测量件(104-2)之间的电阻值跳变为有限值时(即发生吸合现象)，记录跳变瞬间第二驱动电极(103-2)上所施加的驱动电压为第二吸合电压UPI2；
第四步，对第一测量件和第二测量件分别进行准静态的能量法分 析：
Figure PCTCN2016104186-appb-000001
其中，εe为空气的介电常数，w为测量件的宽度，U为施加的电压，g0为测量件与驱动电极之间空气间隙的厚度，x为测量件长度方向上的位置，l为测量件的总长度，z为在测量件厚度方向上的位置，σ0为残余应力，E为杨氏模量，ω(x)为挠度函数，c为幅度值，即测量件中心位置的挠度；
将第一、第二测量件的宽度W带入试件的宽度w，将第一吸合电压UPI1和第二吸合电压UPI2分别带入施加的电压U，将第一测量件的长度L1和第二测量件的长度L2分别带入测量件的总长度l；
第五步，根据第四步的公式带入求解下面的偏微分方程组：
Figure PCTCN2016104186-appb-000002
其中，下标1代表第四步的公式带入第一测量件参数所得到的方程，下标2代表第四步的公式带入第二测量件参数所得到的方程；根据初始的驱动电压为0得到初始的测量件中心位置的挠度为：
Figure PCTCN2016104186-appb-000003
求解计算上述偏微分方程组即得到残余应力σ0和杨氏模量E。
同时，本发明所述测量方法所对应的测量装置，测量装置由2个 多晶硅材料制造的双端固支梁测量单元组成，分别为第一测量单元和第二测量结构单元；
第一测量单元，由设置在衬底上的第一驱动电极(103-1)、第一测量件(104-1)和三个锚区组成，三个锚区上分别设置金属电极，在此将三个锚区分别标记为C、A、A’；第一驱动电极(103-1)为T型，三个锚区分别设置在第一驱动电极(103-1)的三个端部，其中只有位于第一驱动电极(103-1)对称轴线上的第一驱动锚区C与第一驱动电极(103-1)电连接，第一驱动电极(103-1)两端对称设置的第一接地锚区A和第二接地锚区A’与第一驱动电极(103-1)之间均无电连接；第一测量件(104-1)的两端架设在第一接地锚区A和第二接地锚区A’上，构成双端固支梁，第一测量件(104-1)位于第一驱动电极(103-1)的上方，第一测量件(104-1)与第一驱动电极(103-1)之间存在固定间距的空气间隙(105)；
第二测量单元与第一测量单元结构相同，两个测量单元的区别仅在于驱动电极和测量件的长度不同。根据选择工艺、材料等不同，测量件的尺寸设计也不同，为防止所需的吸合电压过高，或者过长的双端固支梁发生塌陷粘附等现象，通常情况下两个测量件的长度选择为50至300微米中的任意数值。
所述测量装置中，衬底由所述衬底由上表面淀积有二氧化硅、和氮化硅的半导体硅材料构成，驱动锚区和接地锚区的底层、驱动电极均由导电薄膜材料1组成，驱动锚区和接地锚区的上层、双端固支梁均由导电薄膜材料2组成，金属电极通过剥离工艺覆盖在驱动锚区和接地锚区上表面。
其中，所述的导电薄膜材料1和导电薄膜材料2为掺杂多晶硅或者金属；金属电极材料为金或铝。
所述的导电薄膜材料1为在衬底上淀积的一层500纳米厚度的多晶硅Poly0；导电薄膜材料2为2000纳米厚度的多晶硅Poly1，多晶硅 Poly1采用N型掺杂，掺杂浓度为50欧姆/方。
有益效果
本发明通过两个双端固支梁组成一组测量结构，由于测量结构中的两个测量单元结构相同，仅仅在驱动电极和测量件的长度上有所区别。而且两个测量件由于经由完全相同的工艺条件因而两者可能影响结果的变量均为具有可控性的设计值，两者的参数具有关联性。本发明所提供的测量方法充分利用两个测量件参数的关联性，严格控制测量单元之间的其他参数，因而可以通过求解偏微分方程组的方式直接得出所需的材料参数。而不需要针对材料的残余应力种类(张应力、压应力)及杨氏模量而进行单独的测量。
同时，由于充分利用了静电力驱动的测量结构借助由同步加工而产生的关联性，本发明仅需要两个结构基本相同的测量单元即可不用区分残余应力种类而测量出具体的残余应力种类和大小。具有测量结构与测量方法都很简单，测量设备要求低，电信号加载和测量简便，计算方法仅限于简单数学方程，计算方法简便稳定的特点。
本测量方法中，测量单元的加工过程与微机电器件(MEMS)同步，没有特殊加工要求，完全符合在线测试的要求。在保证测量结果的实时性的同时，本发明简化了测量过程，测量效率更高。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，并与本发明的实施例一起，用于解释本发明，并不构成对本发明的限制。在附图中：
图1为本发明的测量装置结构示意程图；
图2为本发明测量装置加工中用到的版图；
图3为本发明测量结构在压应力作用下屈曲示意图；
图4为本发明所述测量方法的流程图。
具体实施方式
以下结合附图对本发明的优选实施例进行说明，应当理解，此处所描述的优选实施例仅用于说明和解释本发明，并不用于限定本发明。
图1为本发明的测量装置结构示意程图，由2个多晶硅材料制造的双端固支梁测量单元组成，分别为第一测量单元和第二测量结构单元；第一测量单元，由设置在衬底上的第一驱动电极(103-1)、第一测量件(104-1)和三个锚区组成，三个锚区上分别设置金属电极，在此将三个锚区分别标记为C、A、A’；第一驱动电极(103-1)为T型，三个锚区分别设置在第一驱动电极(103-1)的三个端部，其中只有位于第一驱动电极(103-1)对称轴线上的第一驱动锚区C与第一驱动电极(103-1)电连接，第一驱动电极(103-1)两端对称设置的第一接地锚区A和第二接地锚区A’与第一驱动电极(103-1)之间均无电连接；第一测量件(104-1)的两端架设在第一接地锚区A和第二接地锚区A’上，构成双端固支梁，第一测量件(104-1)位于第一驱动电极(103-1)的上方，第一测量件(104-1)与第一驱动电极(103-1)之间存在固定间距的空气间隙(105)；第二测量单元与第一测量单元结构相同，两个测量单元的区别仅在于驱动电极和测量件的长度不同。根据选择工艺、材料等不同，测量件的尺寸设计也不同，为防止所需的吸合电压过高，或者过长的双端固支梁发生塌陷粘附等现象，通常情况下两个测量件的长度选择为50至300微米中的任意数值。
图2为本发明测量装置加工中用到的版图，下面通过CMOS兼容的工艺步骤来举例说明工艺流程：
1.首先取N型半导体硅片，在N型半导体硅片上热生长100纳米厚度的二氧化硅层，再通过低压化学气相沉积工艺淀积一层500纳米厚度的氮化硅，由此构成所述衬底；
2.在上述衬底上再淀积一层500纳米厚度的多晶硅Poly0，通过光 刻工艺形成T形的驱动电极(103)图形，以及三个锚区的底层图形，刻蚀后得到的驱动电极图形与驱动锚区图形相连接，而与两个接地锚区相分离，如图2中a所示；
3.在完成步骤2后，在整个硅片上淀积一层2000纳米厚度的磷硅玻璃(PSG)作为牺牲层(上一步的电极结构上也要进行沉淀)，通过光刻工艺形成三个锚区图形，然后刻蚀形成牺牲层上三个锚区的空槽，三个锚区空槽重叠在步骤2中由Poly0构成的三个锚区底层图形之上，如图2中b所示；
锚区的底层与驱动电极同时沉积得到，锚区的底层用来把锚区垫高，从而使得最终双端固支梁(即测量件)和驱动电极之间的空气间隙距离g0＝牺牲层的厚度。而牺牲层的目的是让后面的Poly1有一部分结构落上去，最后把牺牲层释放掉就可以得到悬空的Poly1结构。
4.采用低压化学气相沉积工艺淀积一层2000纳米厚度的多晶硅Poly1，对多晶硅进行N型掺杂，掺杂浓度控制在50欧姆/方左右，之后采用光刻工艺形成所有的测量结构图形，包括落在步骤3中三个锚区空槽中的Poly1锚区(101)，以及落在牺牲层上方的Poly1梁结构(即测量件104)。由于牺牲层留出了3个空槽，此时淀积的多晶硅Poly1有一部分会落入空槽中，而其他部分将留在牺牲层上表面，落入空槽中的材料构成锚区的上层。刻蚀留下的Poly1双端固支梁结构(104)与两个接地锚区相连，而与驱动锚区相分离，如图2中c所示；
5.采用剥离工艺在形成金属电极(102)，如图2中d所示。
图2中的a为底层，c中的图形叠加在a上。为了让c中双端固支梁的两边固定而中间架空，需要在a和c之间夹上牺牲层b。在牺牲层b上刻出空槽2以露出覆盖在下面的a的三个方块图形。这样c中的三个方块就能和a中的三个方块连接，而c中的那根梁(即双端固支梁结构，也就是测量件)因为落在了牺牲层上，而牺牲层上没给它开孔，因 此牺牲层释放掉之后，c中测量件就成了悬空的。最后通过剥离工艺在三个锚区上都形成金属电极，方便测量时通电。
图3为本发明测量结构在压应力作用下屈曲示意图，当薄膜材料中的压应力达到一定值时，牺牲层释放之后，在压应力的作用下双端固支梁会发生屈曲现象。如果薄膜材料中的压应力并未达到屈曲的临界值，或者薄膜材料中的应力为张应力，则释放后双端固支梁仍然呈现平直状态。对于上述压应力状态下的薄膜以及张应力状态下的薄膜，本发明中的导电薄膜材料残余应力的测量方法均适用，且可以在未知残余应力性质的情况下进行求解，并根据结果中残余应力的正负状态得到残余应力的性质。
图4为本发明所述测量方法的流程图，测量时，第一步加工得到长度为L1、宽度为W、厚度为H的第一测量件(104-1)，它通过第一接地锚区A和第二接地锚区A’(101)固定在第一驱动电极(103-1)的上方，测量件与驱动电极之间空气间隙(105)的厚度为g0。同时，使用相同工艺过程制作出来第二测量件(104-2)，它通过第二测量单元的第一接地锚区B和第二接地锚区B’固定在第二驱动电极(103-2)的上方。第二测量件与第一测量件相比，差别仅仅是长度不同，第二测量件的长度为L2。
在第一步加工好两个测量件之后，第二步分别通过第一驱动锚区C上的电极向第一驱动电极(103-1)施加缓慢增大的驱动电压，同时，通过第二驱动锚区D上的电极向第二驱动电极(103-2)施加缓慢增大的驱动电压。同时，测量第一驱动电极(103-1)与第一测量件(104-1)之间的电阻值，同时测量第二驱动电极(103-2)与第二测量件(104-2)之间的电阻值，即AC间阻值和BD间阻值。在环境温度下，将A-A’端和B-B’端都接地电位(0V)，在C端和D端接入一个一定范围内缓慢增大的电压扫描信号进行激励。此时，由于驱动锚区C或D与双端固支梁下方固定于衬底的驱动电极之间存在电气连接，因此驱动电极与上方 双端固支梁之间，即驱动电极与测量件之间存在静电力，测量件将因此而被向下吸引。当双端固支梁(即测量件)处于悬空状态时，由于其与下方的驱动电极并未发生接触，因此此时AC间或BD间的电阻值应该为无穷大。当驱动扫描电压增大至一定值时，由于测量件与下方驱动电极之间的静电力发生Pull-in(吸合)现象，此时电阻会从无穷大跳变至一个有限值。
第三步，当第一驱动电极(103-1)与第一测量件之间的电阻值跳变为有限值时，记录跳变瞬间第一驱动电极(103-1)上施加的的驱动电压为第一吸合电压UPI1；同样的，当第二驱动电极(103-2)与第二测量件之间的电阻值跳变为有限值时，记录跳变瞬间第二驱动电极(103-2)上施加的驱动电压为第二吸合UPI2；
第四步，对第一测量件和第二测量件分别进行准静态的能量法分析：
Figure PCTCN2016104186-appb-000004
其中，εe为空气的介电常数，w为测量件的宽度，U为施加的电压，g0为测量件与驱动电极之间空气间隙的厚度，x为测量件长度方向上的位置，l为测量件的总长度，z为在测量件厚度方向上的位置，σ0为残余应力，E为杨氏模量，ω(x)为挠度函数，c为幅度值，即测量件中心位置的挠度；将第一、第二测量件的宽度W带入试件的宽度w，将第一吸合电压UPI1和第二吸合电压UPI2分别带入施加的电压U，将第一测量件的长度L1和第二测量件的长度L2分别带入测量件的总长度l，由此将 分别得到第一测量件的总应变能P1和第二测量件的总应变能P2；
第五步，根据第四步得到的P1、P2带入求解下面的偏微分方程组：
Figure PCTCN2016104186-appb-000005
其中，根据初始的驱动电压为0得到初始的测量件中心位置的挠度为：
Figure PCTCN2016104186-appb-000006
求解计算偏微分方程组即得到残余应力σ0和杨氏模量E。
观察以上公式可知，仅有两个未知量，即残余应力σ0和杨氏模量E，并且该式有且仅有唯一组解。利用数值方法求解偏微分方程组，即可求得残余应力σ0和杨氏模量E。显然，此方法没有特殊加工要求，可以通用于存在张应力或者压应力的情况，完全符合在线测试的要求。
本发明技术方案通过利用两个测量件的参数的关联性，通过采用同步加工得到的两个测量件限制两个测量件总应变能的相关参数，进而通过普通的求解偏微分方程组的方式得出偏微分方程组当中未知的残余应力σ0和杨氏模量E数值。这样的测量方法不需要针对不同残余应力而选取不同的测量机构，而是通过计算得到的残余应力σ0的正负判断残余应力的种类。因而，简化了测量和计算的步骤，只需要通过电激励得到相应的吸合电压就能够计算，测量效率更高。
本领域普通技术人员可以理解：以上所述仅为本发明的优选实施例而已，并不用于限制本发明，尽管参照前述实施例对本发明进行了详细的说明，对于本领域的技术人员来说，其依然可以对前述各实施例记载的技术方案进行修改，或者对其中部分技术特征进行等同替换。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (5)

  1. 一种导电薄膜材料残余应力的测量方法，其特征在于，步骤如下：
    第一步，将长度为L1、宽度为W、厚度为H的第一测量件(104-1)安装在第一驱动电极(103-1)的上方，将长度为L2的、宽度为W、厚度为H的第二测量件(104-2)安装在第二驱动电极(103-2)的上方；
    第二步，向第一驱动电极(103-1)施加缓慢增大的驱动电压，并实时监测第一驱动电极(103-1)与第一测量件(104-1)之间的电阻值，当第一驱动电极(103-1)与第一测量件(104-1)之间的电阻值跳变为有限值时)，记录跳变瞬间第一驱动电极(103-1)上所施加的驱动电压为第一吸合电压UPI1；
    第三步，同样的，向第二驱动电极(103-2)施加缓慢增大的驱动电压，并实时监测第二驱动电极(103-2)与第二测量件(104-2)之间的电阻值，当第二驱动电极(103-2)与第二测量件(104-2)之间的电阻值跳变为有限值时(即发生吸合现象)，记录跳变瞬间第二驱动电极(103-2)上所施加的驱动电压为第二吸合电压UPI2；
    第四步，对第一测量件和第二测量件分别进行准静态的能量法分析：
    Figure PCTCN2016104186-appb-100001
    Figure PCTCN2016104186-appb-100002
    Figure PCTCN2016104186-appb-100003
    其中，εe为空气的介电常数，w为测量件的宽度，U为施加的电压，g0为测量件与驱动电极之间空气间隙的厚度，x为测量件长度方向上的位置，l为测量件的总长度，z为在测量件厚度方向上的位置，σ0为残余应力，E为杨氏模量，ω(x)为挠度函数，c为测量件中心位置的挠度；
    将第一、第二测量件的宽度W带入试件的宽度w，将第一吸合电压UPI1和第二吸合电压UPI2分别带入施加的电压U，将第一测量件的长度L1和第二测量件的长度L2分别带入测量件的总长度l；
    第五步，根据第四步的公式带入求解下面的偏微分方程组：
    其中，下标1代表第四步的公式带入第一测量件参数所得到的方程，下标2代表第四步的公式带入第二测量件参数所得到的方程；根据初始的驱动电压为0得到初始的测量件中心位置的挠度为：
    Figure PCTCN2016104186-appb-100005
    求解计算上述偏微分方程组得到残余应力σ0和杨氏模量E。
  2. 一种导电薄膜材料残余应力的测量装置，其特征在于，测量装置由2个导电薄膜材料制造的双端固支梁测量单元组成，分别为第一测量单元和第二测量单元；
    第一测量单元，由设置在衬底上的第一驱动电极(103-1)、第一测量件(104-1)和三个锚区组成，三个锚区上分别设置金属电极；第一驱动电极(103-1)为T型，三个锚区分别设置在第一驱动电极(103-1)的三个端部，其中只有位于第一驱动电极(103-1)对称轴线上的第一驱动锚区C与第一驱动电极(103-1)电连接，第一驱动电极(103-1)两端对称设置的第一接地锚区A和第二接地锚区A’与第一驱动电极(103-1)之间均无电连接；第一测量件(104-1)的两端架设在第一接地锚区A和第二接地锚区A’上，构成双端固支梁，第一测量件(104-1)位于第一驱动电极(103-1)的上方，第一测量件(104-1)与第一驱动电极(103-1)之间存在固定间距的空气间隙(105)；
    第二测量单元与第一测量单元结构相同，两个测量单元的区别仅在于驱动电极和测量件的长度不同。
  3. 根据权利要求2所述的测量装置，其特征在于：所述衬底由上表面淀积有二氧化硅和氮化硅的半导体硅材料构成，驱动锚区和接地锚区的底层、驱动电极均由导电薄膜材料1组成，驱动锚区和接地锚区的上层、双端固支梁均由导电薄膜材料2组成，金属电极通过剥离工艺覆盖在驱动锚区和接地锚区上 表面。
  4. 根据权利要求3述的测量装置，其特征在于：所述导电薄膜材料1和导电薄膜材料2为掺杂多晶硅或者金属；金属电极材料为金或铝。
  5. 根据权利要求3述的测量装置，其特征在于：所述导电薄膜材料1为在衬底上淀积的一层500纳米厚度的多晶硅Poly0；导电薄膜材料2为2000纳米厚度的多晶硅Poly1，多晶硅Poly1采用N型掺杂，掺杂浓度为50欧姆/方。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108716959A (zh) * 2018-04-09 2018-10-30 中国矿业大学 有效预测压电薄膜与梯度非均匀基底界面应力分布的方法
CN109446544A (zh) * 2018-09-04 2019-03-08 东南大学 一种基于柔性基板弯曲条件下的mems v型梁结构力学分析方法
CN119438298A (zh) * 2024-11-08 2025-02-14 河海大学 一种mems双层薄膜热膨胀系数测量装置及方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109596291B (zh) * 2018-11-05 2020-10-30 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） 用于原位测量mems微梁材料的杨氏模量的方法及装置
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CN115714954B (zh) * 2022-12-28 2023-04-18 绍兴中芯集成电路制造股份有限公司 一种mems器件及其制造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06265428A (ja) * 1993-03-11 1994-09-22 Yamatake Honeywell Co Ltd 静電容量式圧力センサ
US5847283A (en) * 1996-07-03 1998-12-08 Massachusetts Institute Of Technology Method and apparatus for the evaluation of a depth profile of thermo-mechanical properties of layered and graded materials and coatings
CN101520385A (zh) * 2008-02-27 2009-09-02 中国科学院半导体研究所 微机电系统薄膜材料力学性能与可靠性测试方法和装置
CN102565143A (zh) * 2012-01-06 2012-07-11 东南大学 多晶硅材料残余应力在线测试结构
CN104034574A (zh) * 2014-06-03 2014-09-10 东南大学 多晶硅薄膜材料杨氏模量测试结构及方法
CN104568586A (zh) * 2015-01-08 2015-04-29 东南大学 薄膜材料断裂强度的测试结构
CN104568585A (zh) * 2015-01-08 2015-04-29 东南大学 金属薄膜材料杨氏模量测试结构
WO2015184946A1 (zh) * 2014-06-03 2015-12-10 李伟华 薄膜材料残余应力测试结构及方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104122012B (zh) * 2014-06-05 2016-08-24 东南大学 一种多晶硅薄膜残余应力的测试结构及其测试方法
CN105606283B (zh) * 2016-01-15 2018-05-15 东南大学 一种基于多梁比对结构的mems微梁应力梯度的测试结构和测量方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06265428A (ja) * 1993-03-11 1994-09-22 Yamatake Honeywell Co Ltd 静電容量式圧力センサ
US5847283A (en) * 1996-07-03 1998-12-08 Massachusetts Institute Of Technology Method and apparatus for the evaluation of a depth profile of thermo-mechanical properties of layered and graded materials and coatings
CN101520385A (zh) * 2008-02-27 2009-09-02 中国科学院半导体研究所 微机电系统薄膜材料力学性能与可靠性测试方法和装置
CN102565143A (zh) * 2012-01-06 2012-07-11 东南大学 多晶硅材料残余应力在线测试结构
CN104034574A (zh) * 2014-06-03 2014-09-10 东南大学 多晶硅薄膜材料杨氏模量测试结构及方法
WO2015184946A1 (zh) * 2014-06-03 2015-12-10 李伟华 薄膜材料残余应力测试结构及方法
CN104568586A (zh) * 2015-01-08 2015-04-29 东南大学 薄膜材料断裂强度的测试结构
CN104568585A (zh) * 2015-01-08 2015-04-29 东南大学 金属薄膜材料杨氏模量测试结构

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108716959A (zh) * 2018-04-09 2018-10-30 中国矿业大学 有效预测压电薄膜与梯度非均匀基底界面应力分布的方法
CN109446544A (zh) * 2018-09-04 2019-03-08 东南大学 一种基于柔性基板弯曲条件下的mems v型梁结构力学分析方法
CN119438298A (zh) * 2024-11-08 2025-02-14 河海大学 一种mems双层薄膜热膨胀系数测量装置及方法

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