WO2018035668A1 - Micro-led transfer method, manufacturing method and device - Google Patents

Micro-led transfer method, manufacturing method and device Download PDF

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Publication number
WO2018035668A1
WO2018035668A1 PCT/CN2016/096197 CN2016096197W WO2018035668A1 WO 2018035668 A1 WO2018035668 A1 WO 2018035668A1 CN 2016096197 W CN2016096197 W CN 2016096197W WO 2018035668 A1 WO2018035668 A1 WO 2018035668A1
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WO
WIPO (PCT)
Prior art keywords
micro
leds
protection layer
transferred
laser
Prior art date
Application number
PCT/CN2016/096197
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English (en)
French (fr)
Inventor
Quanbo Zou
Peixuan CHEN
Xiangxu FENG
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Goertek.Inc
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Publication date
Application filed by Goertek.Inc filed Critical Goertek.Inc
Priority to US16/320,019 priority Critical patent/US10896927B2/en
Priority to CN201680087531.6A priority patent/CN109478580B/zh
Priority to PCT/CN2016/096197 priority patent/WO2018035668A1/en
Publication of WO2018035668A1 publication Critical patent/WO2018035668A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

Definitions

  • the present invention relates to the field of micro-LED, and in particular, relates to a micro-LED transfer method, a method for manufacturing a micro-LED device and a micro-LED device.
  • the micro-LED technology refers to the LED array of small size integrated on a substrate with high density.
  • the micro-LED technology is starting development, and it is expected in the industry that a high-quality micro-LED product comes into the market.
  • High-quality micro-LEDs will have a deep affection on the conventional display products such as LCD/OLED that have already been put into the market.
  • the micro-LEDs shall be transferred from a carrier substrate to a receiving substrate.
  • the receiving substrate is a display panel, for example.
  • complicated transfer head array such as an electro-static head array, an electro-magnetic head array, or a head array using micro-transfer printing (uTP) with molded PDMS, etc. are used in transferring massive micro-LED array. This, leads to a high manufacturing cost and a critical environmental requirement, and reliability/yield issues arise due to multiple thermal loadings.
  • a laser can go through a laser-transparent carrier substrate and reach the surface of the receiving substrate.
  • the surface of the receiving substrate may include some circuitry. The laser might cause potential damage to the circuitry.
  • Fig. 1 shows a situation of an oversized laser beam.
  • some of the laser 107 goes through a laser-transparent carrier substrate 101 such as a sapphire substrate and reaches the circuitry 105 on the surface of the receiving substrate 102.
  • the circuitry 105 can include TFT (Thin-film transistor) , for example.
  • the carrier substrate is a sapphire substrate, for example.
  • micro-LEDs 103 are formed on the carrier substrate 101.
  • the micro-LEDs 103a, 103b to be transferred are bonded with the pads (such as anodes) 104 on the circuitry 105 of the receiving substrate 102 via solder 106.
  • the section area of the laser 107 is larger than that of the micro-LEDs 103a, 103b, so that some laser is leaked and reaches the circuitry 105 and might cause damage to the circuitry 105.
  • Fig. 2 shows a situation of an undersized laser beam.
  • micro-LEDs 203 are formed on the carrier substrate 201.
  • the micro-LEDs 203a, 203b are bonded with pads 204 on the circuitry 205 of the receiving substrate 202 via solder 206.
  • the section area of the laser 207 is smaller than that of the micro-LEDs 103a, 103b so that the laser will not reach the circuitry 205.
  • This processing requires a high precision bonding and laser alignment, which might be a bottleneck for small micro-LED transfer, such as during manufacturing micro-LEDs with a size smaller than a few microns.
  • One object of this invention is to provide a new technical solution for micro-LED transfer.
  • a micro-LED transfer method comprising: obtaining a carrier substrate, wherein the carrier substrate is laser-transparent and has a first surface and a second surface which is opposite to the first surface, and micro-LEDs to be transferred are formed on the second surface; forming a protection layer on at least one of the first surface and the second surface of the carrier substrate and a third surface of a receiving substrate, wherein the third surface of the receiving substrate is configured to receive the micro-LEDs to be transferred via pads; bringing the micro-LEDs to be transferred into contact with the pads on the third surface; and irradiating the micro-LEDs to be transferred with laser from the first surface to lift-off the micro-LEDs to be transferred from the carrier substrate, wherein the protection layer is configured to protect the third surface from the irradiation of the laser.
  • the protection layer is a mask formed on the first surface and is configured to let the laser go through areas corresponding the micro-LEDs to be transferred.
  • the protection layer is formed on at least one of the second surface and the third surface.
  • the protection layer is formed on the second surface in gaps among micro-LEDs on the second surface.
  • the protection layer is formed on the third surface in a blanket manner without mask patterning and is conductive, and the protection layer covers the pads, and the method further comprises: removing the protection layer between micro-LEDs on the third surface after lifting-off the micro-LEDs to be transferred.
  • the protection layer is formed on the third surface in a patterned manner in which the protection layer corresponds to gaps among micro-LEDs on the second surface.
  • the protection layer is at least one of a patterned metal, a patterned polymer and a dielectric Distributed Bragg Reflector.
  • the protection layer is formed on the pads on the third surface and is conductive, and the protection layer on a pad has an area larger than that of the micro-LEDs to be transferred on the second surface.
  • a method for manufacturing a micro-LED device comprising transferring micro-LEDs on a carrier substrate to a receiving substrate by using the micro-LED transfer method according to the present invention.
  • a micro-LED device which is manufactured by using the method according to the present invention.
  • a protection is provided to the circuitry on the receiving substrate to avoid a potential damage.
  • Fig. 1 shows a schematic diagram of micro-LED transfer using an oversized laser beam.
  • Fig. 2 shows a schematic diagram of micro-LED transfer using an undersized laser beam.
  • Fig. 3 shows a schematic diagram of micro-LED transfer according to a first embodiment of the present invention.
  • Figs. 4A-4C show a schematic diagram of micro-LED transfer according to a second embodiment of the present invention.
  • Figs. 5A-5E show a schematic diagram of micro-LED transfer according to a third embodiment of the present invention.
  • Figs. 6A-6E show a schematic diagram of micro-LED transfer according to a fourth embodiment of the present invention.
  • Figs. 7A-7E show a schematic diagram of micro-LED transfer according to a fifth embodiment of the present invention.
  • a protection layer is formed between the surface of the receiving substrate and the laser source during the transfer such that the likelihood of damage will be reduced. Furthermore, it has a less complexity than that of the processing using the undersized laser beam.
  • the micro-LED transfer method comprises: obtaining a carrier substrate, wherein the carrier substrate is laser-transparent and has a first surface and a second surface which is opposite to the first surface, and micro-LEDs to be transferred are formed on the second surface; forming a protection layer on at least one of the first surface and the second surface of the carrier substrate and a third surface of a receiving substrate, wherein the third surface of the receiving substrate is configured to receive the micro-LEDs to be transferred via pads; bringing the micro-LEDs to be transferred into contact with the pads on the third surface; and irradiating the micro-LEDs to be transferred with laser from the first surface to lift-off the micro-LEDs to be transferred from the carrier substrate, wherein the protection layer is configured to protect the third surface from the irradiation of the laser.
  • the protection layer is a mask formed on the first surface of the carrier substrate and is configured to let the laser go through areas corresponding the micro-LEDs to be transferred.
  • Fig. 3 shows a schematic diagram of micro-LED transfer according to the first embodiment of the present invention.
  • Fig. 3 shows a carrier substrate 301 and a receiving substrate 302.
  • the carrier substrate 301 is laser-transparent and has a first surface and a second surface which is opposite to the first surface.
  • Micro-LEDs 303 are formed on the second surface.
  • a third surface is a surface of the receiving substrate 302 which is configured to receive the micro-LEDs to be transferred 303a, 303b via pads 304.
  • the micro-LEDs to be transferred 303a, 303b are brought into contact with the pads 304 on the third surface, for example, via solder 306.
  • a mask 308 is formed on the first surface of the carrier substrate 301. Openings are formed in the mask to let laser 307 go through.
  • the openings have a section area smaller than that of the micro-LEDs to be transferred 303a, 303b such that no laser will be leaked onto the third surface of the receiving substrate 302.
  • the section area of the opening is smaller than that of the epitaxy layer of the micro-LED 303.
  • the micro-LEDs to be transferred 303a, 303b are irradiated with laser 307 from the first surface to lift-off the micro-LEDs to be transferred 303a, 303b from the carrier substrate 301.
  • the protection layer 308 protect the third surface (such as the circuitry layer 305) of the receiving substrate 302 from the irradiation of the laser 307.
  • the mask used in this embodiment can be simple photoresist and/or hard masking (such as a metal thin film) patterned by photolithography.
  • the mask can be easily stripped afterwards. This protection solution using a mask can be low cost.
  • the protection layer can be formed on at least one of the second surface of the carrier substrate and the third surface of the receiving substrate. In the second embodiment, the protection layer is formed on the second surface in gaps among micro-LEDs on the second surface.
  • Figs. 4A-4C show a schematic diagram of micro-LED transfer according to the second embodiment of the present invention.
  • micro-LEDs 403 are formed on the carrier substrate 401.
  • a protection material 408 is formed on the carrier substrate 401.
  • the protection material 408 can be resist, polymer, etc..
  • the resist can be spin-coated and baked on the carrier substrate 401 (micro-LEDs 403) .
  • the polymer can be spin-coated and cured.
  • the protection material 408 is etched back to leave a protection layer 409 in the gaps among micro-LEDs 403.
  • the protection layer 409 can be a thin layer with a thickness of 0.5-2 ⁇ m.
  • the micro-LEDs to be transferred 403a, 403b are brought into contact with the pads 404 on the third surface of the receiving substrate 402, for example, via solder 406.
  • a circuitry layer 405 is formed on the receiving substrate 402.
  • the micro-LEDs to be transferred 403a, 403b are irradiated with laser 407 from the first surface to lift-off the micro-LEDs to be transferred 403a, 403b from the carrier substrate 401. Because of the protection layer 409, less or no leak laser will reach the circuitry layer 405.
  • the protection layer 409 can be re-used in following transfers. Alternatively, it can be re-formed in following transfers.
  • an oversized laser beam can be used. It can provide an easy control in manufacturing.
  • the protection layer is formed on the third surface in a blanket manner without mask patterning and is conductive.
  • the protection layer covers the pads.
  • the protection layer between micro-LEDs on the third surface is removed after the micro-LEDs to be transferred are lifted-off.
  • Figs. 5A-5E show a schematic diagram of micro-LED transfer according to the third embodiment of the present invention.
  • pads 504 are formed on a receiving substrate 502.
  • a circuitry layer 505 is also formed on the receiving substrate 502.
  • a protection layer 508 is formed on the receiving substrate 502 in a blanket manner without mask patterning.
  • the protection layer 508 is conductive. It can be of metal and can be deposited in stacks.
  • micro-LEDs to be transferred 503a, 503b are brought into contact with pads 504, for example via solder 506 and the protection layer 508.
  • Micro-LEDs 503 are formed on a carrier substrate 501.
  • the micro-LEDs to be transferred 503a, 503b are irradiated with laser 507 from the first surface to lift-off the micro-LEDs to be transferred 503a, 503b from the carrier substrate 501. Because of the protection layer 508, less or no leak laser will reach the circuitry layer 505.
  • the protection layer 508 between micro-LEDs on the third surface of the receiving substrate 502 is removed.
  • the conductive protection layer 509 is left between the micro-LEDs 503 and the pads 504.
  • the protection layer is formed on the third surface in a patterned manner in which the protection layer corresponds to gaps among micro-LEDs on the second surface.
  • the protection layer is at least one of a patterned metal, a patterned polymer and a dielectric Distributed Bragg Reflector.
  • Figs. 6A-6E show a schematic diagram of micro-LED transfer according to the fourth embodiment of the present invention.
  • pads 604 are formed on a receiving substrate 602.
  • a circuitry layer 605 is also formed on the receiving substrate 602.
  • a protection layer 608 is formed on the receiving substrate 602 in in a patterned manner in which the protection layer 608 will correspond to gaps among micro-LEDs on the second surface of a carrier substrate 601.
  • the protection layer 508 can be of metal and can be deposited in stacks. It can also be polymer. In an example, it can be a dielectric Distributed Bragg Reflector.
  • the protection layer can larger than, equal to, or smaller than the gaps as long as it can protect at least a part of the circuitry layer 605.
  • micro-LEDs to be transferred 603a, 603b are brought into contact with pads 604, for example, via solder 606.
  • Micro-LEDs 603 are formed on a carrier substrate 601.
  • the micro-LEDs to be transferred 603a, 603b are irradiated with laser 607 from the first surface to lift-off the micro-LEDs to be transferred 603a, 603b from the carrier substrate 601. Because of the protection layer 608, less or no leak laser will reach the circuitry layer 605.
  • the protection layer 608 between micro-LEDs on the third surface of the receiving substrate 602 is removed.
  • the process of Fig. 6E can be omitted and the protection layer 608 can be kept in on the receiving substrate, for example, if the protection layer 608 is not conductive.
  • the protection layer is formed on the pads on the third surface and is conductive, and the protection layer on a pad has an area larger than that of the micro-LEDs to be transferred on the second surface.
  • the area of the protection layer on a pad is larger than that of the micro-LEDs, the likelihood that laser damages the circuitry on the receiving substrate will be reduced.
  • the area of a pad can also be larger than that of the micro-LEDs.
  • Figs. 7A-7E show a schematic diagram of micro-LED transfer according to a fifth embodiment of the present invention.
  • pads 704 are formed on a receiving substrate 702.
  • a circuitry layer 705 is also formed on the receiving substrate 702.
  • a protection layer 708 is formed on the pads the receiving substrate 702.
  • the protection layer 708 is conductive. It can be of metal and can be deposited in stacks. For example, it can be Cr.
  • the pad 704 and the protection layer 708 on a pad have similar area. However, they can have different areas as long as the protection layer on a pad is larger than the micro-LEDs.
  • the protection layer 708 on a pad can be larger than, equal to, or smaller than a pad.
  • micro-LEDs to be transferred 703a, 703b are brought into contact with pads 704, for example via solder 706 and the protection layer 708.
  • Micro-LEDs 703 are formed on a carrier substrate 701.
  • the micro-LEDs to be transferred 703a, 703b are irradiated with laser 707 from the first surface to lift-off the micro-LEDs to be transferred 703a, 703b from the carrier substrate 701. Because of the protection layer 708, less or no leak laser will reach the circuitry layer 705.
  • the protection layer 708 is left between the micro-LEDs 703 and the pads 704.
  • the solutions in the embodiments can reduce the likelihood of damage by leaking laser.
  • the solutions in the embodiments can provide a relatively easy control for laser lifting-off during micro-LED transfer.
  • the present invention further provides a method for manufacturing a micro-LED device.
  • the manufacturing method comprises transferring micro-LEDs to a receiving substrate by using the micro-LED transfer method according to the embodiments of the present invention.
  • the receiving substrate is a display panel, a display screen or display substrate.
  • the micro-LED device is a display device, for example.
  • the present invention further provides a micro-LED device, such as a display device.
  • the micro-LED device can be manufactured by using the method for manufacturing a micro-LED device according to the embodiments of the present invention.
  • the circuitry on the receiving substrate are protected by a protection layer such that a better micro-LED may be provided.
  • the present invention further provides an electronic apparatus.
  • the electronic apparatus contains a micro-LED device according to the embodiment.
  • the electronic apparatus can be a mobile phone, a pad and so on.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
PCT/CN2016/096197 2016-08-22 2016-08-22 Micro-led transfer method, manufacturing method and device WO2018035668A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US16/320,019 US10896927B2 (en) 2016-08-22 2016-08-22 Micro-LED transfer method, manufacturing method and device
CN201680087531.6A CN109478580B (zh) 2016-08-22 2016-08-22 微发光二极管转移方法、制造方法及器件
PCT/CN2016/096197 WO2018035668A1 (en) 2016-08-22 2016-08-22 Micro-led transfer method, manufacturing method and device

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US20180219123A1 (en) * 2016-04-19 2018-08-02 Boe Technology Group Co., Ltd. Light-emitting diode substrate and manufacturing method thereof, and display device
TWI647742B (zh) * 2018-04-19 2019-01-11 友達光電股份有限公司 發光裝置及其製造方法
CN109671734A (zh) * 2018-10-19 2019-04-23 友达光电股份有限公司 显示面板及其制造方法
WO2020159142A1 (en) 2019-01-30 2020-08-06 Samsung Electronics Co., Ltd. Led transfer device comprising mask and led transferring method using the same
WO2020197105A1 (en) * 2019-03-27 2020-10-01 Samsung Electronics Co., Ltd. Micro led transfer device and micro led transferring method
WO2020226306A1 (en) 2019-05-07 2020-11-12 Samsung Electronics Co., Ltd. Micro led transfer method and display module manufactured by the same
CN112133795A (zh) * 2019-06-24 2020-12-25 天津三安光电有限公司 一种制造适于转移的半导体发光元件结构的方法

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US11756982B2 (en) 2016-06-10 2023-09-12 Applied Materials, Inc. Methods of parallel transfer of micro-devices using mask layer
KR20210011536A (ko) * 2019-07-22 2021-02-02 삼성디스플레이 주식회사 미세 소자의 전사 장치 및 전사 방법
CN110429089B (zh) * 2019-08-15 2023-02-03 京东方科技集团股份有限公司 驱动背板及其制作方法、显示装置
KR20210027848A (ko) * 2019-09-03 2021-03-11 삼성전자주식회사 마이크로 엘이디 디스플레이 및 이의 제작 방법
JP7438815B2 (ja) 2020-03-27 2024-02-27 株式会社ジャパンディスプレイ アレイ基板、表示装置及び表示装置の製造方法
CN113497016A (zh) * 2020-04-07 2021-10-12 重庆康佳光电技术研究院有限公司 一种led显示装置及巨量转移方法
CN113451490B (zh) * 2020-04-30 2022-03-01 重庆康佳光电技术研究院有限公司 一种键合方法、显示背板及显示背板制造系统
WO2021217607A1 (zh) * 2020-04-30 2021-11-04 重庆康佳光电技术研究院有限公司 一种键合方法、显示背板及显示背板制造系统
US11901477B2 (en) 2021-06-17 2024-02-13 Applied Materials, Inc. Light absorbing barrier for LED fabrication processes
CN113764550B (zh) * 2021-09-07 2023-01-24 东莞市中麒光电技术有限公司 一种防止led芯片损伤的转移方法
WO2023044257A1 (en) * 2021-09-20 2023-03-23 Applied Materials, Inc. Methods of parallel transfer of micro-devices using mask layer
WO2023108451A1 (zh) * 2021-12-15 2023-06-22 厦门市芯颖显示科技有限公司 发光器件和转移装置

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