WO2018033248A3 - Procédé de montage de puces semi-conductrices et dispositif de transfert de puces semi-conductrices - Google Patents

Procédé de montage de puces semi-conductrices et dispositif de transfert de puces semi-conductrices Download PDF

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Publication number
WO2018033248A3
WO2018033248A3 PCT/EP2017/000990 EP2017000990W WO2018033248A3 WO 2018033248 A3 WO2018033248 A3 WO 2018033248A3 EP 2017000990 W EP2017000990 W EP 2017000990W WO 2018033248 A3 WO2018033248 A3 WO 2018033248A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor chips
transfer unit
carrier
assembling
transferring
Prior art date
Application number
PCT/EP2017/000990
Other languages
German (de)
English (en)
Other versions
WO2018033248A2 (fr
Inventor
Juergen Moosburger
Frank Singer
Nikolaus Gmeinwieser
Original Assignee
Osram Opto Semconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semconductors Gmbh filed Critical Osram Opto Semconductors Gmbh
Publication of WO2018033248A2 publication Critical patent/WO2018033248A2/fr
Publication of WO2018033248A3 publication Critical patent/WO2018033248A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
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    • H01L2224/756—Means for supplying the connector to be connected in the bonding apparatus
    • H01L2224/75611—Feeding means
    • H—ELECTRICITY
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    • H01L2224/7565—Means for transporting the components to be connected
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    • H01L2224/838—Bonding techniques
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector

Abstract

L'invention concerne un procédé de montage de puces semi-conductrices, selon lequel les puces semi-conductrices sont tout d'abord transférées d'un premier support sur une unité de transfert. L'unité de transfert présente une partie réception. Le transfert des puces semi-conductrices du premier support sur l'unité de transfert se fait par roulement de la partie réception de l'unité de transfert contre le premier support. Dans une autre étape du procédé, les puces semi-conductrices reçues par l'unité de transfert sont transportées de la partie réception à une partie dépôt de l'unité de transfert. Dans une étape suivante du procédé, les puces semi-conductrices sont transférées de l'unité de transfert sur un second support. Le transfert des puces semi-conductrices de l'unité de transfert sur le second support se fait par roulement de la partie dépôt de l'unité de transfert contre le second support.
PCT/EP2017/000990 2016-08-16 2017-08-16 Procédé de montage de puces semi-conductrices et dispositif de transfert de puces semi-conductrices WO2018033248A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016115186.6A DE102016115186A1 (de) 2016-08-16 2016-08-16 Verfahren zum Montieren von Halbleiterchips und Vorrichtung zum Übertragen von Halbleiterchips
DE102016115186.6 2016-08-16

Publications (2)

Publication Number Publication Date
WO2018033248A2 WO2018033248A2 (fr) 2018-02-22
WO2018033248A3 true WO2018033248A3 (fr) 2018-05-03

Family

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Application Number Title Priority Date Filing Date
PCT/EP2017/000990 WO2018033248A2 (fr) 2016-08-16 2017-08-16 Procédé de montage de puces semi-conductrices et dispositif de transfert de puces semi-conductrices

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DE (1) DE102016115186A1 (fr)
WO (1) WO2018033248A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109219342A (zh) * 2018-10-25 2019-01-15 浙江大学 连续滚动式磁控转印印章、转印系统及方法
DE102018127123A1 (de) * 2018-10-30 2020-04-30 Osram Opto Semiconductors Gmbh Transferwerkzeug und Verfahren zum Transferieren von Halbleiterchips
CN110349897B (zh) * 2019-08-12 2024-03-29 深圳市思坦科技有限公司 芯片转移装置

Citations (6)

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US20050214963A1 (en) * 2004-03-29 2005-09-29 Daniels John J Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
US20070020801A1 (en) * 2005-07-20 2007-01-25 Fujitsu Limited IC chip mounting method
US20070077730A1 (en) * 2005-09-30 2007-04-05 Christophe Halope Method and device for extracting an electronic chip from a silicon wafer and transporting the chip to its installation location on an electronic device
US20070183184A1 (en) * 2006-02-03 2007-08-09 Semiconductor Energy Laboratory Ltd. Apparatus and method for manufacturing semiconductor device
US20090297300A1 (en) * 2006-01-17 2009-12-03 Muehlbauer Ag Apparatus and method for transferring a plurality of chips from a wafer to a sub strate
US20140259633A1 (en) * 2013-03-15 2014-09-18 Sandia Corporation Printed crystalline microelectronic devices

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JP3739752B2 (ja) * 2003-02-07 2006-01-25 株式会社 ハリーズ ランダム周期変速可能な小片移載装置
US7861405B2 (en) * 2008-03-03 2011-01-04 Palo Alto Research Center Incorporated System for forming a micro-assembler
KR101022017B1 (ko) * 2008-10-01 2011-03-16 한국기계연구원 계층화 구조물 제조 장치
DE102014110285A1 (de) * 2014-07-22 2016-01-28 Thyssenkrupp Ag Einrichtung und Verfahren zum Strukturieren einer Walze durch Laserabtrag

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214963A1 (en) * 2004-03-29 2005-09-29 Daniels John J Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
US20070020801A1 (en) * 2005-07-20 2007-01-25 Fujitsu Limited IC chip mounting method
US20070077730A1 (en) * 2005-09-30 2007-04-05 Christophe Halope Method and device for extracting an electronic chip from a silicon wafer and transporting the chip to its installation location on an electronic device
US20090297300A1 (en) * 2006-01-17 2009-12-03 Muehlbauer Ag Apparatus and method for transferring a plurality of chips from a wafer to a sub strate
US20070183184A1 (en) * 2006-02-03 2007-08-09 Semiconductor Energy Laboratory Ltd. Apparatus and method for manufacturing semiconductor device
US20140259633A1 (en) * 2013-03-15 2014-09-18 Sandia Corporation Printed crystalline microelectronic devices

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DE102016115186A1 (de) 2018-02-22

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