WO2018021082A1 - 電流センサ - Google Patents

電流センサ Download PDF

Info

Publication number
WO2018021082A1
WO2018021082A1 PCT/JP2017/025869 JP2017025869W WO2018021082A1 WO 2018021082 A1 WO2018021082 A1 WO 2018021082A1 JP 2017025869 W JP2017025869 W JP 2017025869W WO 2018021082 A1 WO2018021082 A1 WO 2018021082A1
Authority
WO
WIPO (PCT)
Prior art keywords
current
sensor
magnetic field
current sensor
bus bar
Prior art date
Application number
PCT/JP2017/025869
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
卓馬 江坂
江介 野村
亮輔 酒井
達明 杉戸
Original Assignee
株式会社デンソー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社デンソー filed Critical 株式会社デンソー
Publication of WO2018021082A1 publication Critical patent/WO2018021082A1/ja

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices

Definitions

  • the processing circuit calculates a tangent value at the angle ⁇ formed by the second magnetic field and the combined magnetic field, and outputs a sensor signal corresponding to the tangent value. For this reason, in the present disclosure, the sensor signal becomes a signal linearly corresponding to the detected current, and the detection accuracy can be improved.
  • the first slit and the second slit are formed in the current path, and the sensor chip is disposed on the center line. For this reason, the present disclosure can suppress a decrease in the amount of magnetic field felt by the sensor chip even on the high frequency side of the current to be detected, and improve high frequency characteristics.
  • the present disclosure can improve the position robustness because the sensor chip is arranged on the center line of the current path. That is, in the present disclosure, since the sensor chip is arranged on the center line of the current path, even if the position of the sensor chip is shifted from the center line in the width direction of the current path, the amount of magnetic field felt by the sensor chip is reduced. Can be suppressed. Thus, this indication can improve position robustness, improving a high frequency characteristic.
  • the current sensor 100 will be described with reference to FIGS. 1, 2, 3, and 4.
  • FIG. 1 and FIG. 2 the ceramic package 15 and the like are not shown for easy understanding of the positional relationship between the sensor chip 11 and the bus bar 20.
  • the current sensor 100 is used, for example, for inverter control of an in-vehicle motor.
  • the current sensor 100 detects a detected current flowing in the bus bar 20 that supplies power to the vehicle-mounted motor for inverter control.
  • the current sensor 100 detects the detected current by causing the sensor chip 11 to convert the detected magnetic field generated by the bus bar 20 into an electric signal when the detected current flows through the bus bar 20 corresponding to the current path.
  • the inverter current sensor 100 is employed as an example.
  • the present disclosure is not limited to this, and can be applied to the detection of the current of the in-vehicle battery.
  • the current sensor 100 includes a detection unit 10 and a bus bar 20.
  • the detection part 10 is assembled
  • combination magnetic field Bs comprised by the bias magnetic field Bb and the electric current magnetic field Bi is applied to the detection part 10 (sensor chip 11).
  • the current magnetic field Bi corresponds to the first magnetic field
  • the bias magnetic field Bb corresponds to the second magnetic field.
  • the detection unit 10 mainly includes a sensor chip 11, a processing circuit 12, and a bias magnet 13.
  • a current sensor 100 including a ceramic package 15, a first wire 14a, a second wire 14b, and a spacer 16 is employed. Since the sensor chip 11, the processing circuit 12, the wires 14 a and 14 b, and the signal wiring described later have a voltage lower than that of the bus bar 20, they can also be referred to as a low voltage portion.
  • the sensor chip 11 detects the magnetic flux density (detected magnetic field) generated by the current to be detected flowing through the bus bar 20, performs magnetoelectric conversion, and converts it into an electrical signal.
  • the sensor chip 11 is mounted on the processing circuit 12 via an adhesive or the like, and is electrically connected to the processing circuit 12 via a first wire 14a.
  • the electric signal magnetoelectrically converted by the sensor chip 11 is output to the processing circuit 12 via the first wire 14a.
  • the sensor chip 11 that outputs a signal including a cosine value corresponding to the angle ⁇ formed by the bias magnetic field Bb and the combined magnetic field Bs as an electrical signal is employed.
  • the present disclosure can also be employed in the sensor chip 11 that outputs a signal including a sine value corresponding to the angle ⁇ formed by the bias magnetic field Bb and the combined magnetic field Bs as an electrical signal.
  • the sensor chip 11 includes a first magnetoresistive element 11a to a fourth magnetoresistive element 11d constituting a bridge circuit.
  • Each of the magnetoresistive elements 11a to 11d is an element whose electric signal changes depending on the direction of the magnetic vector, such as a giant magnetoresistive element (GMR), an anisotropic magnetoresistive element (AMR), or a tunnel magnetoresistive element (TMR).
  • GMR giant magnetoresistive element
  • AMR anisotropic magnetoresistive element
  • TMR tunnel magnetoresistive element
  • the magnetoresistive elements 11a to 11d can employ the magnetoresistive elements disclosed in JP2013-64663A. That is, each of the magnetoresistive elements 11a to 11d includes a pinned layer whose magnetization direction is fixed in a predetermined direction, a tunnel layer made of an insulator, and a free layer whose magnetization direction changes according to external magnetization, and is stacked in that order. It is a general one provided with an electrode and an upper electrode.
  • the processing circuit 12 has a circuit configuration as shown in FIG.
  • the processing circuit 12 performs arithmetic processing to convert the input electric signal into a sensor signal for output to the circuit board 200 described later.
  • the processing circuit 12 can employ the circuit configuration disclosed in JP2013-64663A. Therefore, since details of the processing circuit 12 can be referred to Japanese Patent Laid-Open No. 2013-64663, the description here is simplified.
  • the processing circuit 12 includes a power supply circuit 12a, a differential amplifier circuit 12b, an arithmetic circuit 12c, a first terminal 12d, a second terminal 12e, a third terminal 12f, a storage unit 12g, a fourth terminal 12h, and the like.
  • the power supply circuit 12a includes a constant voltage circuit or the like, and is connected to the midpoint of the first magnetoresistive element 11a and the fourth magnetoresistive element 11d.
  • the power supply circuit 12a converts the voltage input from the power supply via the first terminal 12d into a constant voltage Vcc, and this constant voltage Vcc is applied to the midpoint between the first magnetoresistive element 11a and the fourth magnetoresistive element 11d. Apply.
  • the middle point of the second magnetoresistive element 11b and the third magnetoresistive element 11c is connected to the ground via the second terminal 12e.
  • the inverting input terminal is connected to the midpoint of the third magnetoresistive element 11c and the fourth magnetoresistive element 11d, and the voltage Va1 at this midpoint is input.
  • the differential amplifier circuit 12b has a non-inverting input terminal connected to the midpoint of the first magnetoresistive element 11a and the second magnetoresistive element 11b, and receives the voltage Va2 at the midpoint.
  • the differential amplifier circuit 12b differentially amplifies the input voltage and outputs a signal Va to the arithmetic circuit 12c.
  • the spacer 16 is a member for ensuring a predetermined distance between the sensor chip 11 and the bias magnet 13. As shown in FIG. 4, the spacer 16 is mounted on the ceramic package 15 via an adhesive or the like.
  • the current sensor 100 is not limited to this, and may include a plurality of first wires 14a or a plurality of second wires 14b.
  • the ceramic package 15 is a container in which an accommodation space 15e for accommodating the sensor chip 11 and the like is formed, as shown in FIG.
  • the ceramic package 15 has a ring-shaped side wall and a bottom formed at one end of the ring-shaped side wall, and the other end of the ring-shaped side wall is opened, and can be said to be a box-shaped member in which the accommodation space 15e is formed. Therefore, the ceramic package 15 can also be said to be a bottomed box member that is partially opened. Further, the ceramic package 15 has one surface S1 and a back surface S2 that is opposite to the one surface S1 and is provided in parallel to the one surface S1.
  • the ceramic package 15 also accommodates the processing circuit 12, the wires 14a and 14b, and the spacer 16 in the accommodation space 15e. Further, the bias magnet 13 is arranged in a state where a part thereof is accommodated in the accommodation space 15e and the other part protrudes from the accommodation space 15e.
  • the sensor chip 11 and the processing circuit 12 are disposed on the side of the accommodation space 15 e at the bottom, and the opposite side of the accommodation space 15 e at the bottom is fixed to the bus bar 20. That is, the back surface S ⁇ b> 2 of the ceramic package 15 is fixed to the bus bar 20. Therefore, it can be said that the ceramic plate 15a which is a part of the ceramic package 15 is arrange
  • the ceramic package 15 is fixed to the bus bar 20 via an adhesive or the like.
  • the ceramic package 15 is configured by laminating a plurality of ceramic plates 15a as shown in FIG.
  • a ceramic package 15 in which 15 layers of ceramic plates 15a are stacked is employed.
  • the surface of the ceramic plate 15a that is the outermost layer on the opening end side corresponds to one surface S1.
  • the surface of the ceramic plate 15a that is the outermost layer on the opposite side corresponds to the back surface S2.
  • the ceramic package 15 is a sintered body obtained by baking and hardening an inorganic material such as Al 2 O 3 or Si 3 N 4 .
  • the ceramic plate 15a having a substantially square outer shape is employed.
  • the present disclosure is not limited to this, and a rectangular shape or a circular shape can be adopted.
  • a part of the ceramic plate 15a is formed in an annular shape in order to form the accommodation space 15e, and another ceramic plate 15a is formed in a plate shape in order to form the bottom.
  • the ceramic package 15 has a side wall formed of an annular ceramic plate 15a.
  • the ceramic package 15 has an inner wall surface 15f formed by the opening wall surface of the laminated annular ceramic plate 15a.
  • the annular ceramic plate 15a has a through hole formed in the thickness direction.
  • the plate-like ceramic plate 15a is one in which a through hole is not formed.
  • the thickness direction corresponds to the Z direction.
  • the ceramic package 15 including conductive signal wiring that is an electrical path between the sensor chip 11 and the circuit board 200 is employed.
  • the ceramic package 15 includes, for example, a signal pattern 15b, a signal via 15c, and a signal pad 15d that constitute a signal wiring.
  • the signal pattern 15b includes a portion that is provided between the ceramic plates 15a and is not exposed to the accommodation space 15e, and a portion that is exposed to the accommodation space 15e so that the second wire 14b can be connected.
  • the signal via 15c is provided so as to penetrate the ceramic plate 15a, and electrically connects the signal patterns 15b of different layers, and the signal pattern 15b and the signal pad 15d.
  • the signal pad 15d is provided on the one surface S1 side, and is a portion that is electrically and mechanically connected to the land 220 of the circuit board 200 and the solder 30. It can be said that the signal pad 15d forms part of the one surface S1.
  • the ceramic package 15 provided with the shield portion 15g which is a component for shielding the electric field noise generated from the bus bar 20 is employed.
  • a shield portion 15g including a ground plane 15g1, a shield pattern 15g2, a shield via 15g3, and a shield pad 15g4 is employed.
  • the shield pattern 15g2 is provided in a ring shape. For this reason, the shield pattern 15g2 can also be referred to as a guard ring.
  • the shield pattern 15g2 is provided at a position surrounding the sensor chip 11 and the processing circuit 12.
  • the shielding pattern 15g2 is provided at a position surrounding a part of the signal wiring. It can be said that the shielding pattern 15g2 is provided in an annular shape at a position surrounding the accommodation space 15e.
  • a shield pattern 15g2 is provided on a 12-layer ceramic plate 15a provided continuously.
  • the shield pattern 15g2 is provided on each ceramic plate 15a between the ground plane 15g1 and the shield pad 15g4.
  • the shield via 15g3 electrically connects the shield pattern 15g2, the shield pattern 15g2 and the shield pad 15g4, and the shield pattern 15g2 and the ground plane 15g1. That is, the shield via 15g3 electrically connects the ground plane 15g1 to the shield pad 15g4 through the respective shield patterns 15g2.
  • the shield via 15g3 only needs to be provided in at least one location of each ceramic plate 15a between the ground plane 15g1 and the shield pad 15g4. Therefore, the shield vias 15g3 may be provided at two or more locations in each ceramic plate 15a. In this embodiment, an example is adopted in which shield vias 15g3 are provided at two locations on each ceramic plate 15a between the ground plane 15g1 and the shield pad 15g4.
  • the shield pad 15g4 is provided on the one surface S1 side, and is a part electrically and mechanically connected to the land 220 of the circuit board 200 and the solder 30. It can be said that the shield pad 15g4 forms part of the one surface S1.
  • the land 220 to which the shielding pad 15g4 is connected is the ground of the circuit board 200.
  • the ground plane 15g1 is a solid pattern.
  • the current sensor 100 is provided with a ground plane 15g1 so that a low voltage portion is included in a region opposite to the ground plane 15g1 in the Z direction.
  • the ground plane 15g1 is provided between the low voltage portion and the bus bar 20.
  • the shield portion 15g having a three-dimensional structure is formed by the shield pattern 15g2, the ground plane 15g1, and the shield via 15g3.
  • the shield portion 15g is configured to surround the low voltage portion with the shield pattern 15g2, the ground plane 15g1, and the shield via 15g3.
  • the shield portion 15g is connected to the ground of the circuit board 200 via a shield pad 15g4.
  • the shield 15g preferably has a body ground different from the sensor ground to which the processing circuit 12 is connected.
  • the present disclosure is not limited to this.
  • the configuration of the shield part 15g is not limited to this.
  • the shield part 15g may be formed on the surface of the ceramic package 15 facing the accommodation space 15e. That is, the ceramic package 15 may have the inner wall surface 15f formed by the shield portion 15g.
  • the bus bar 20 is configured so that the detection unit 10 can be mounted, and includes a portion facing the sensor chip 11.
  • FIG. 1 an example in which a current flows in the Y direction of the bus bar 20 is adopted.
  • the bus bar 20 When the current flows, the bus bar 20 generates a current magnetic field Bi as shown in FIG.
  • the bus bar 20 has a first slit 21 and a second slit 22 formed therein.
  • the first slit 21 and the second slit 22 are holes penetrating in the thickness direction of the bus bar 20, that is, the Z direction.
  • the 1st slit 21 and the 2nd slit 22 whose opening shape is a rectangular shape are employ
  • the first slit 21 and the second slit 22 are provided in parallel along the Y direction. That is, the first slit 21 and the second slit 22 are provided with the long side along the Y direction and the short side along the X direction. In other words, the first slit 21 and the second slit 22 are provided along the bias magnetic field Bb.
  • the first slit 21 and the second slit 22 are provided symmetrically about the center line CL of the bus bar 20 as the symmetry axis. That is, the distance between the center line CL and the first slit 21 is the same as the distance between the center line CL and the second slit 22. However, the positions of the first slit 21 and the second slit 22 are not limited to this. The interval between the center line CL and the first slit 21 may be different from the interval between the center line CL and the second slit 22.
  • the center line CL is a virtual straight line that passes through the center of the width W1 of the bus bar 20 and extends in the Y direction.
  • the width W1 of the bus bar 20 is the length of the bus bar 20 in the X direction.
  • the length of each element in the X direction is also simply referred to as a width.
  • the width direction indicates the X direction.
  • the bus bar 20 includes a part facing the sensor chip 11 in a part sandwiched between the first slit 21 and the second slit 22. Therefore, the sensor chip 11 is disposed to face the region between the first slit 21 and the second slit 22 in the bus bar 20. Further, the sensor chip 11 is disposed on the center line CL of the bus bar 20.
  • the sensor chip 11 is arranged on the center line CL of the bus bar 20 in a state where the detection unit 10 in which the sensor chip 11 or the like is accommodated in the ceramic package 15 is mounted on the bus bar 20. Therefore, it can be said that the current sensor 100 has a line-symmetric shape with the center line CL as the axis of symmetry in a state where the detection unit 10 is mounted on the bus bar 20, as shown in FIG.
  • the circuit board 200 is an output destination of the sensor signal in the current sensor 100.
  • the circuit board 200 includes an insulating base 210, a land 220, a board via 230, a conductor pattern 240, a hole 250, and the like. That is, in the circuit board 200, wiring including the land 220, the board via 230, and the conductor pattern 240 is formed on the insulating base 210 that is an insulating resin base, and in the thickness direction of the insulating base 210. A penetrating hole 250 is formed.
  • the circuit board 200 in which the hole part 250 which penetrated the insulating base material 210 in the thickness direction was formed is employ
  • the circuit board 200 may be a bottomed hole 250 that does not penetrate the insulating base 210.
  • the current sensor 100 is mounted on the circuit board 200 with the signal pad 15 d electrically and mechanically connected to the land 220 via the solder 30. Therefore, the current sensor 100 outputs a sensor signal to the circuit board 200 via the solder 30. For this reason, the solder 30 can be regarded as a part of the low voltage portion.
  • the ceramic package 15 has an opening end that faces the bottom and is surrounded by a side wall, and it can be said that the end of the side wall that surrounds the opening end is mounted on the circuit board 200.
  • the bias magnet 13 is disposed in the hole 250 while the current sensor 100 is mounted on the circuit board 200.
  • the current sensor 100 calculates the tangent value at the angle ⁇ formed by the bias magnetic field Bb and the combined magnetic field Bs by the processing circuit 12, and outputs a signal corresponding to the tangent value as a sensor signal. Therefore, in the current sensor 100, the sensor signal becomes a signal linearly corresponding to the detected current, and the detection accuracy can be improved.
  • the current sensor 100 detects a magnetic field in two directions, the X direction and the Y direction.
  • a first slit 21 and a second slit 22 are formed in the bus bar 20. For this reason, the current sensor 100 can improve the high frequency characteristics. This point will be described using a current sensor of a comparative example. In the current sensor of the comparative example, it is assumed that the bus bar has a flat plate shape and no slit is formed.
  • the current density in the bus bar decreases as the cross-sectional area of the bus bar increases. For this reason, in the current sensor, the amount of magnetic field generated by the bus bar is also reduced, and the S / N ratio is deteriorated.
  • the detected current flows at both ends in the width direction due to the skin effect on the high frequency side of the detected current. For this reason, in the current sensor of the comparative example, when the sensor chip is arranged on the center line of the bus bar, the amount of magnetic field felt by the sensor chip is reduced. Further, in the current sensor of the comparative example, when the sensor chip is arranged on one end in the width direction of the bus bar in order to suppress the decrease in the amount of magnetic field felt by the sensor chip, the position robustness is lowered.
  • the current sensor 100 has a first slit 21 and a second slit 22 formed in the bus bar 20.
  • the bus bar 20 of the current sensor 100 has both ends in the width direction, end portions facing through the first slit 21, and end portions facing through the second slit 22 due to the skin effect.
  • a current to be detected flows.
  • the current sensor 100 can suppress a decrease in the amount of magnetic field felt by the sensor chip 11 even on the high frequency side of the detected current. Therefore, the current sensor 100 can improve high frequency characteristics. Furthermore, since the current sensor 100 can improve the high frequency characteristics even when the width W1 of the bus bar 20 is widened, the heat generation of the bus bar 20 can be suppressed.
  • the sensor chip 11 is disposed on the center line CL of the bus bar 20. For this reason, the current sensor 100 can improve the position robustness. That is, since the sensor chip 11 is disposed on the center line CL of the bus bar 20, the current sensor 100 has a sensor chip 11 even if the position of the sensor chip 11 is shifted from the center line CL in the width W 1 direction of the bus bar 20. A decrease in the amount of magnetic field felt by the chip 11 can be suppressed. Therefore, even if the sensor chip 11 is displaced in the width direction, the current sensor 100 can easily secure the amount of magnetic field felt by the sensor chip 11 and can improve the S / N ratio. Thus, the current sensor 100 can improve the position robustness while improving the high frequency identification.
  • the current sensor 100 can improve the high frequency characteristics even when the width W1 of the bus bar 20 is widened as described above, the bus bar 20 having a relatively wide width can be adopted. For this reason, the current sensor 100 can easily improve the position robustness as compared with the case where the width of the bus bar is relatively narrow.
  • the sensor chip 11 is housed in the ceramic package 15 that is more excellent in insulation than an epoxy resin or the like. Therefore, in the current sensor 100, it is easier to ensure the insulation between the sensor chip 11 and the bus bar 20 and the distance between the sensor chip 11 and the bus bar 20 is closer than when the sensor chip 11 is sealed with the mold resin. Can do.
  • the current sensor 100 can ensure insulation even when the sensor chip 11 is brought close to the bus bar 20. Therefore, the current sensor 100 can increase the detection magnetic field as compared with the case where the sensor chip 11 is sealed with the mold resin. Accordingly, the current sensor 100 can improve detection accuracy.
  • the ceramic package 15 is provided with a shield portion 15g which is a component for shielding electric field noise generated from the bus bar 20.
  • the shield portion 15g is formed on the bottom and side walls of the ceramic package 15 so as to surround the low voltage portion.
  • the current sensor 100 since the current sensor 100 has the shield portion 15g as described above, the low voltage portion can be protected from electric field noise generated by the bus bar 20. More specifically, the current sensor 100 can protect the low voltage part not only from electric field noise from a portion facing the bottom of the ceramic package 15 but also from electric field noise that wraps around the side wall of the ceramic package 15.
  • the current sensor 100 can suppress electrostatic coupling between the wires 14 a and 14 b and the signal wiring and the bus bar 20. For this reason, the current sensor 100 can suppress fluctuations in the electrical signals converted by the sensor chip 11 and the sensor signals output from the processing circuit 12, that is, output fluctuations.
  • the magnetic shield 40 is made of a magnetic material and prevents the external magnetic field from passing through the sensor chip 11.
  • the sensor chip 11, the processing circuit 12, the bias magnet 13, and the bus bar 20 are sandwiched between a pair of magnetic shields 40.
  • the current sensor 120 can achieve the same effects as the current sensor 100.
  • the current sensor 120 includes the magnetic shield 40, it is possible to suppress application of an external magnetic field to the sensor chip 11, and detection accuracy can be improved as compared with the current sensor 100.
  • the current sensor 120 is less susceptible to magnetic noise from the adjacent current sensor 120. That is, the current sensor 120 is less susceptible to magnetic noise from the adjacent current sensor 120 than when the sensor chip 11 is disposed at a position shifted to the adjacent current sensor 120 side from the center line CL of the bus bar 20. . Therefore, the current sensor 120 can also be expected to ensure shielding performance as a current sensor terminal block.
  • the current sensor 100 including one sensor chip 11 including the first magnetoresistive element 11a to the fourth magnetoresistive element 11d constituting the bridge circuit is employed.
  • the current sensor of Modification 3 includes two sensor chips as in JP 2013-64663 A. That is, the current sensor of Modification 3 includes a second sensor chip formed so that the other four magnetoresistive elements form a bridge circuit in addition to the sensor chip 11.
  • the current sensor of Modification 3 can achieve the same effect as the current sensor of the above embodiment.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
PCT/JP2017/025869 2016-07-26 2017-07-18 電流センサ WO2018021082A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016146418A JP6673077B2 (ja) 2016-07-26 2016-07-26 電流センサ
JP2016-146418 2016-07-26

Publications (1)

Publication Number Publication Date
WO2018021082A1 true WO2018021082A1 (ja) 2018-02-01

Family

ID=61016889

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/025869 WO2018021082A1 (ja) 2016-07-26 2017-07-18 電流センサ

Country Status (2)

Country Link
JP (1) JP6673077B2 (enrdf_load_stackoverflow)
WO (1) WO2018021082A1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020148640A (ja) * 2019-03-14 2020-09-17 株式会社東芝 電流検出装置
KR102562009B1 (ko) * 2021-06-28 2023-08-01 주식회사 루텍 대전류 계측 장치

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210887A (ja) * 1989-02-09 1990-08-22 Nec Corp 磁気抵抗効果素子
JP2007067778A (ja) * 2005-08-31 2007-03-15 Kyocera Kinseki Corp 圧電デバイス
US20120112365A1 (en) * 2010-03-26 2012-05-10 Infineon Technologies Ag Semiconductor Packages and Methods For Producing The Same
JP2012220469A (ja) * 2011-04-14 2012-11-12 Alps Green Devices Co Ltd 電流センサ
WO2013038867A1 (ja) * 2011-09-13 2013-03-21 アルプス・グリーンデバイス株式会社 電流センサ
JP2014181981A (ja) * 2013-03-19 2014-09-29 Denso Corp 電流センサ
JP2015135267A (ja) * 2014-01-17 2015-07-27 株式会社リコー 電流センサ
JP2016070904A (ja) * 2014-10-02 2016-05-09 トヨタ自動車株式会社 電流センサ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2619925B1 (fr) * 1987-08-26 1989-12-22 Bruni Olivier Dispositif de mesure de courants forts
US5939772A (en) * 1997-10-31 1999-08-17 Honeywell Inc. Shielded package for magnetic devices
JP2009168790A (ja) * 2008-01-16 2009-07-30 Koshin Denki Kk 電流センサ
JP5577544B2 (ja) * 2010-03-09 2014-08-27 アルプス・グリーンデバイス株式会社 電流センサ
JP6459819B2 (ja) * 2014-11-28 2019-01-30 トヨタ自動車株式会社 電流検出装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210887A (ja) * 1989-02-09 1990-08-22 Nec Corp 磁気抵抗効果素子
JP2007067778A (ja) * 2005-08-31 2007-03-15 Kyocera Kinseki Corp 圧電デバイス
US20120112365A1 (en) * 2010-03-26 2012-05-10 Infineon Technologies Ag Semiconductor Packages and Methods For Producing The Same
JP2012220469A (ja) * 2011-04-14 2012-11-12 Alps Green Devices Co Ltd 電流センサ
WO2013038867A1 (ja) * 2011-09-13 2013-03-21 アルプス・グリーンデバイス株式会社 電流センサ
JP2014181981A (ja) * 2013-03-19 2014-09-29 Denso Corp 電流センサ
JP2015135267A (ja) * 2014-01-17 2015-07-27 株式会社リコー 電流センサ
JP2016070904A (ja) * 2014-10-02 2016-05-09 トヨタ自動車株式会社 電流センサ

Also Published As

Publication number Publication date
JP6673077B2 (ja) 2020-03-25
JP2018017553A (ja) 2018-02-01

Similar Documents

Publication Publication Date Title
JP5482736B2 (ja) 電流センサ
US10746821B2 (en) Current sensor
CN101900754B (zh) 电流传感器
US9086444B2 (en) Magnetic field detection device and current sensor
WO2013080557A1 (ja) 電流センサ
US10247759B2 (en) Current sensor
US10184960B2 (en) Current sensor
JP5906488B2 (ja) 電流センサ
JP6711086B2 (ja) 電流センサ
JP2022528407A (ja) 磁気抵抗慣性センサ・チップ
WO2012157558A1 (ja) 磁気センサ装置
WO2013099215A1 (ja) 電流センサ
JP2017187301A (ja) 電流センサ
JP2018004314A (ja) 電流センサ
CN103018522A (zh) 电流传感器及其附着结构
WO2018110108A1 (ja) 電流センサ
CN113495183A (zh) 电流传感器及其制造方法、电控制装置、以及电流传感器的设计方法
WO2016002501A1 (ja) 電流センサ
WO2018021082A1 (ja) 電流センサ
WO2014045559A1 (ja) 電流センサ
JP2014055791A (ja) 電流センサ
JP5556603B2 (ja) 磁気アイソレータ
JP5504483B2 (ja) 電流センサ
JP2012063285A (ja) 電流センサ
JP5458319B2 (ja) 電流センサ

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17834090

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17834090

Country of ref document: EP

Kind code of ref document: A1