WO2018018848A1 - Intelligent power module and method for manufacturing same - Google Patents

Intelligent power module and method for manufacturing same Download PDF

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Publication number
WO2018018848A1
WO2018018848A1 PCT/CN2016/113978 CN2016113978W WO2018018848A1 WO 2018018848 A1 WO2018018848 A1 WO 2018018848A1 CN 2016113978 W CN2016113978 W CN 2016113978W WO 2018018848 A1 WO2018018848 A1 WO 2018018848A1
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WO
WIPO (PCT)
Prior art keywords
layer
power module
circuit
substrate
circuit wiring
Prior art date
Application number
PCT/CN2016/113978
Other languages
French (fr)
Chinese (zh)
Inventor
冯宇翔
Original Assignee
广东美的制冷设备有限公司
美的集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201610624916.3A external-priority patent/CN106098650A/en
Priority claimed from CN201610616070.9A external-priority patent/CN106024652A/en
Application filed by 广东美的制冷设备有限公司, 美的集团股份有限公司 filed Critical 广东美的制冷设备有限公司
Publication of WO2018018848A1 publication Critical patent/WO2018018848A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Definitions

  • the invention belongs to the field of electronic device manufacturing processes, and in particular relates to an intelligent power module and a manufacturing method thereof.
  • the Intelligent Power Module is a power-driven product that combines power electronics and integrated circuit technology.
  • the IPM integrates a power switching device and a high voltage driving circuit, and has built-in fault detection circuits such as overvoltage, overcurrent, and overheating.
  • the IPM receives the control signal of the MCU, drives the subsequent circuit to work, and on the other hand sends the status detection signal of the system back to the MCU.
  • IPM has won more and more large markets with its high integration and high reliability. It is especially suitable for inverters and various inverter power supplies for driving motors. It is frequency control and metallurgical machinery. An ideal power electronic device for electric traction, servo drive, and frequency conversion appliances.
  • the intelligent power module generally works in harsh working conditions, such as the outdoor unit of the inverter air conditioner. Under high temperature and high humidity, the high temperature will increase the internal temperature of the intelligent power module, and the current intelligent power module is completely sealed by the sealing resin.
  • the structure of the smart power module is very easy to generate heat accumulation, and high humidity causes water vapor to enter the internal circuit of the intelligent power module through the gap between the sealing resin and the lead, and the high temperature inside the smart power module makes Ions, especially chloride and bromide in water and gas
  • the migration occurs under the metal, causing corrosion to the metal wire. This corrosion often occurs at the junction of the metal wire and the circuit component or the metal wire and the circuit wiring, resulting in an open circuit, causing fatal damage to the intelligent power module, and seriously causing intelligence.
  • the power module has an uncontrolled explosion accident, which causes damage to its application environment and causes major economic losses.
  • the intelligent power module has different power devices.
  • the material and thickness of the metal wires are different, which increases the processing difficulty of the intelligent power module.
  • the purchase of different state-of-the-line devices also increases the processing cost, and
  • the combination of various bonding processes makes the manufacturing pass-through rate of the intelligent power module low, and the production yield is difficult to increase. As a result, the cost of the intelligent power module is high, which affects the popular application of the intelligent power module.
  • the invention aims to solve the deficiencies of the prior art, and provides a high-reliability intelligent power module and a process flow adapted to the structure as a manufacturing method, which can reduce the intelligence while ensuring better contact reliability of the intelligent power module.
  • the cost of the power module is not limited to a high-reliability intelligent power module and a process flow adapted to the structure as a manufacturing method, which can reduce the intelligence while ensuring better contact reliability of the intelligent power module.
  • An embodiment of the first aspect of the present invention provides an intelligent power module comprising: a substrate having a first surface and a second surface opposite to the first surface as a carrier; and a first surface disposed on the substrate An insulating layer; a circuit wiring layer formed on a surface of the insulating layer; a circuit component that is reversed and soldered to a predetermined position on an upper surface of the circuit wiring layer; and a surface coated on the surface of the insulating layer, the circuit A sealing layer covered by a wiring layer and circuit components.
  • a pin is further included, the circuit wiring layer including a pin pad adjacent to the edge, the pin being connected to the pin pad and extending outside the circuit wiring.
  • the surface of the lead is covered with a plating layer.
  • the pin is disposed at least one edge of the smart power module.
  • sealing layer also covers the substrate.
  • the sealing layer is a resin layer.
  • the beneficial effect of the above intelligent power module is that the circuit components are electrically connected by flip-chip method.
  • the metal bonding line is no longer needed, which saves the cost; the heat sink and the aluminum substrate are completely exposed outside the resin to maximize the heat dissipation effect; even if the external moisture is invaded, it is difficult to form corrosion because there is no metal wire.
  • Another object of the present invention is to provide a method for manufacturing an intelligent power module, comprising the following steps:
  • a substrate as a carrier, covering the first surface of the substrate with an insulating layer; wherein the substrate further has a second surface opposite to the first surface;
  • a sealing layer is coated on the surface of the insulating layer to cover the circuit wiring layer and the circuit component.
  • the manufacturing method of the above intelligent power module has the beneficial effects that the full-encapsulation technology can ensure the compactness of the intelligent power module to the greatest extent, thereby improving the reliability of the intelligent power module; eliminating the metal wire bonding and cleaning process. Further reliability of the intelligent power module, but also saves equipment investment, improves production efficiency, reduces process control requirements, greatly reduces the manufacturing difficulty of the intelligent power module, improves the manufacturing yield, and further reduces the cost of the intelligent power module. .
  • An embodiment of the second aspect of the present invention provides an intelligent power module including: a substrate having a first surface and a second surface opposite to the first surface as a carrier; and a first surface disposed on the substrate The insulating layer, wherein the insulating layer is pre-positioned with a through hole penetrating the substrate; a circuit wiring layer formed on a surface of the insulating layer, wherein a potential pad is preset on the circuit wiring layer Electrically connecting to the substrate through the through hole; a circuit component that is reversed and soldered to a predetermined position on an upper surface of the circuit wiring layer; and a surface coated on the surface of the insulating layer, the circuit wiring layer and the circuit The sealing layer covered by the component.
  • a pin is further included, the circuit wiring layer including a pin pad adjacent to the edge, the pin being connected to the pin pad and extending outside the circuit wiring.
  • the surface of the lead is covered with a plating layer.
  • the pin is disposed at least one edge of the smart power module.
  • sealing layer also covers the substrate.
  • the sealing layer is a resin layer.
  • the beneficial effects of the above intelligent power module are: the electrical connection of the circuit components by the flip-chip method, the metal bonding wire is no longer needed, and the cost is saved; the heat sink and the aluminum substrate are completely exposed outside the resin to maximize the heat dissipation effect; Even if external moisture is invaded, it is difficult to form corrosion because there is no metal wire; the substrate is connected to a certain potential of the circuit wiring to obtain the specific potential of the substrate, shielding the electromagnetic interference and avoiding the occurrence of false triggering.
  • Another object of the present invention is to provide a method for manufacturing an intelligent power module, comprising the following steps:
  • a substrate as a carrier, the first surface of the substrate is covered with an insulating layer; wherein the substrate further has a second surface opposite to the first surface; and the insulating layer is provided at a predetermined position a through hole of the substrate; a circuit wiring layer is disposed on the surface of the insulating layer, and a potential pad electrically connected to the substrate through the through hole is preset in the circuit wiring layer; and the circuit wiring layer is The surface mount circuit component, wherein the circuit component is assembled in an inverted manner; a surface of the insulating layer is coated with a sealing layer to cover the circuit wiring layer and the circuit component.
  • the manufacturing method of the above intelligent power module has the beneficial effects that the full-encapsulation technology can ensure the compactness of the intelligent power module to the greatest extent, thereby improving the reliability of the intelligent power module; eliminating the metal wire bonding and cleaning process. Further reliability of the intelligent power module, but also saves equipment investment, improves production efficiency, reduces process control requirements, greatly reduces the manufacturing difficulty of the intelligent power module, improves the manufacturing yield, and further reduces the cost of the intelligent power module. Further, the step of forming the aluminum substrate to form a specific potential and the step of electrically connecting the component and the circuit wiring are unified, and the manufacturing method is not increased.
  • FIG. 1(A) is a top plan view of an intelligent power module according to an embodiment of the present invention.
  • Figure 1 (B) is a cross-sectional view taken along line X-X' in Figure 1 (A);
  • 1(C) is a plan view of the smart power module of the present invention with the sealing layer removed;
  • 1(D) is a top plan view of the lower surface of the smart power module of the present invention.
  • FIG. 2 is a flowchart of a manufacturing process of an intelligent power module according to an embodiment of the present invention
  • 3(A) and 3(B) are respectively a plan view and a side view process for fabricating a circuit wiring in the manufacturing method of the smart power module of the present invention
  • Figure 4 (A) is a dimension drawing of the pin
  • Figure 4 (B) is a schematic view of the process of making a lead
  • 5(A) and 5(B) are schematic views showing side view and top view of assembled circuit components and leads, respectively;
  • FIG. 6 is a schematic view showing a sealing process of a method for manufacturing an intelligent power module
  • FIG. 7 is a schematic diagram of a detecting process of a method for manufacturing an intelligent power module
  • FIG. 8 is a process flow diagram of a method of manufacturing an intelligent power module.
  • FIG. 9(A) is a top view of an intelligent power module according to an embodiment of the present invention.
  • Figure 9 (B) is a cross-sectional view taken along line X-X' in Figure 1 (A);
  • Figure 9 (C) is a plan view of the smart power module of the present invention with the sealing layer removed;
  • Figure 9 (D) is a top plan view of the lower surface of the smart power module of the present invention.
  • FIG. 10 is a flowchart of a manufacturing process of an intelligent power module according to an embodiment of the present invention.
  • 11(A) and 11(B) are respectively a plan view and a side view process for fabricating a circuit wiring in the method of manufacturing the smart power module of the present invention
  • Figure 12 (A) is a dimension drawing of the pin
  • Figure 12 (B) is a schematic view showing the process of making a lead
  • 13(A), 13(B) and 13(C) are schematic views showing side view and top view of assembled circuit components and leads, respectively;
  • FIG. 14 is a schematic view showing a sealing process of a method of manufacturing an intelligent power module
  • 15 is a schematic diagram of a detecting process of a method of manufacturing an intelligent power module
  • 16 is a process flow diagram of a method of manufacturing an intelligent power module.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • the smart power module includes a substrate 16, an insulating layer 17, a circuit wiring (circuit wiring) 18, and a circuit component 14. a circuit, and a pin 11 disposed at an edge of the circuit wiring 18, and a sealing layer 12 that seals the circuit and completely covers the circuit element 14 and the upper surface of the insulating layer 17.
  • 1(A) is a top plan view of the upper surface of the smart power module 10 of the present invention, the heat sink 15 is exposed from the upper surface
  • FIG. 1(B) is a cross section taken along line XX' of FIG. 1(A).
  • 1(C) is a plan view showing the sealing layer 12 covering the circuit component 14 removed
  • FIG. 1(D) is a top plan view of the smart power module 10 of the present invention.
  • the substrate 16 acts as a carrier for the smart power module 10 and has a first surface and a second surface opposite the first surface.
  • the insulating layer 17 is disposed on the first surface of the substrate.
  • a circuit wiring layer 18 is formed on the surface of the insulating layer; the circuit component 14 is inverted and soldered to a predetermined position on the upper surface of the circuit wiring layer 18; a power component mounted on the circuit component 14 by the heat sink 15; a sealing layer 12 is coated on the surface of the insulating layer 17, covering the circuit wiring layer 18 and the circuit component 14, and the surface of the heat sink 15 is exposed.
  • the power component is a planar power device, such as an IGBT transistor, and an LIGBT must be used.
  • the power component included in circuit component 14 is a low power component that can be dissipated without the use of a heat sink. Even if a heat sink is required, the heat sink is mounted on the power component in the circuit component.
  • the sealing layer 12 is coated on the surface of the insulating layer 17, the surface of the heat sink is exposed; the heat sink is a heat sink, and the surface of the heat sink can be considered. Electroplating silver treatment is carried out to increase the wettability.
  • the sealing layer is a sealing resin layer.
  • a pin pad 18A there is a special circuit wiring for configuring the pin 11, which is referred to as a pin pad 18A.
  • the pin 11 pin pad 18A is connected and extends from the outside of the circuit wiring 18.
  • the surface of the lead is covered with a plating layer.
  • the circuit board 16 is a rectangular plate material made of aluminum such as 1050 or 5052.
  • an aluminum material of 1050 may be used, and in order to increase the hardness, an aluminum material of 5052 may be selected; in order to increase the withstand voltage, the aluminum material may be anodized, and in order to improve heat dissipation, anodization may not be performed.
  • the thickness of the circuit substrate 16 can be designed to be 1.5 mm to 2.0 mm.
  • the insulating layer 17 located on one surface of the substrate 16 can be designed to have a thickness of 100 ⁇ m to 200 ⁇ m and a thermal conductivity of 2 W/(m*K) to 3 W/(m*K).
  • the thickness is selected to be 100 ⁇ m.
  • the thickness may be selected to be 200 ⁇ m, and the thickness should generally not exceed 200 ⁇ m.
  • the thicker the thickness of the insulating layer is selected the higher the thermal conductivity should be selected accordingly.
  • the circuit wiring 18 is formed by stamping or etching a copper material having a thickness of 2 ounces or more. To prevent oxidation, the upper surface of the circuit wiring 18 may be subjected to gold plating treatment, and the circuit wiring 18 is provided for cost. The surface can also be silver plated or shipped in a vacuum or nitrogen-filled package with no treatment on the upper surface.
  • the circuit component 14 is flip-chip mounted on the circuit wiring 18.
  • the circuit element 14 uses an active element such as a transistor or a diode, or a passive element such as a capacitor or a resistor. Further, the heat sink 15 made of copper or the like is attached to the back surface of the element having a large amount of heat such as a power element.
  • solder solder
  • the lead 11 is generally made of a metal such as copper.
  • the surface of the copper is formed by electroless plating and electroplating to form a layer of nickel-tin alloy.
  • the thickness of the alloy layer is generally 5 ⁇ m.
  • the plating layer protects the copper from corrosion and oxidation and improves solderability.
  • the pin 11 may be disposed at one of the edges of the smart power module 10, or may be disposed at two opposite edges of the smart power module 10, or may be disposed at three edges of the smart power module 10, or Located at four edges of the smart power module 10;
  • the sealing layer 12 may be molded by a transfer molding using a thermosetting resin or an injection molding using a thermoplastic resin.
  • the sealing layer 12 completely seals all the elements on one side of the circuit wiring 18.
  • the lower surface of the circuit substrate 16 is also covered by the sealing layer 12, so that the moisture resistance of the smart power module 10 is improved; here, because the power component is also densely
  • the sealing layer 12 is completely sealed. Therefore, the sealing layer 12 should generally select a material with more angular crystals to improve its thermal conductivity. Considering the Panasonic 3300 series or the Hitachi 3600 series; in addition, in order to ensure the For the reliability of the smart power module 10, the leakage tracking capability of the sealing layer 12 should not be lower than 500V.
  • the beneficial effect of the intelligent power module is that the circuit components, including the small and medium power circuit components, are electrically connected by flip-chip method, eliminating the need for metal bonding wires, saving cost; sealing all the elements of the module with resin to maximize water resistance Gas entry effect; even if external moisture is invaded, it is difficult to form corrosion because there is no metal wire.
  • a method for manufacturing the smart power module including the following steps:
  • Step S110 manufacturing a substrate as a carrier, covering the first surface of the substrate with an insulating layer; wherein the substrate further has a second surface opposite to the first surface;
  • Step S120 laying a circuit wiring layer on the surface of the insulating layer
  • Step S130 assembling a circuit component on a surface of the circuit wiring layer, wherein the circuit component is assembled in an inverted manner;
  • Step S140 covering a surface of the insulating layer with a sealing layer to cover the circuit wiring layer and the circuit component.
  • Step S140 specifically includes: providing a thermosetting resin frame around the surface of the insulating layer; and injecting a thermoplastic resin into the range of the thermosetting resin frame to seal the circuit wiring layer, the circuit component, and the substrate.
  • step S130 is the step of making a separate coated pin.
  • the step specifically includes: selecting a copper substrate, forming a row of pins by punching or etching the copper substrate, connecting the pins through the ribs; forming a nickel layer and a nickel tin on the surface of the lead The alloy layer gives a plated lead.
  • the method further comprises the steps of: soldering the circuit component to the circuit wiring layer by reflow soldering; and removing the flux remaining in the insulating layer.
  • Fully encapsulated technology injection ensures maximum compactness of the intelligent power module, thus enabling intelligent power
  • the reliability of the module is improved; the metal wire bonding and cleaning process are eliminated, the reliability of the intelligent power module is further improved, the equipment investment is saved, the production efficiency is improved, the process control requirements are reduced, and the intelligent power module is manufactured.
  • the difficulty is greatly reduced, the manufacturing yield is improved, and the cost of the intelligent power module is further reduced.
  • the method of manufacturing the smart power module includes the following steps.
  • the first process 802 referring to FIGS. 3(A) and 3(B):
  • the first step 802 of the present invention is a step of the present invention, and the step is a step of forming a circuit wiring on an aluminum plate of an appropriate size.
  • a circuit board 16 of a suitable size is designed according to the required circuit layout.
  • one size can be selected as 64 mm ⁇ 30 mm, and the short sides of three pieces are connected to each other with a size of 50 mm ⁇ 75mm, forming a triple-plate unit composed of three smart power modules 10 metal circuit substrates 16.
  • An insulating layer 17 is provided on the surface of the aluminum substrate 16. Further, a copper foil as the circuit wiring 18 is bonded to the surface of the insulating layer 17. Then, the copper foil produced in this step is etched to partially remove the copper foil to form the circuit wiring 18 and the lead pad 18A.
  • the aluminum substrate of a suitable size is formed by directly processing a 1 m ⁇ 1 m aluminum material, and the file is made of high-speed steel, and the motor is rotated at 5000 rpm, and the boring tool and the aluminum material are used.
  • the plane is cut at a right angle to make the edge of the 1100 aluminum material at right angles, and the burr is less than 10 ⁇ m. It can also be etched into a specific shape by chemical reaction through an etching tool. Referring to the X-X' line of FIG. 3(A), FIG. 3(B) is a cross-sectional view.
  • a gold layer may be formed on the surface of the circuit wiring 18 by means of electroplating gold or chemical immersion gold.
  • the thickness of the copper plate used to manufacture the circuit wiring 18 should be not less than 2 ounces, ensuring sufficient flow capacity.
  • the triple plate unit is sometimes separated by a V-CUT method, and the V-CUT can prevent the insulating layer 17 from being cracked during punching, thereby improving the long-term reliability of the smart power module 10.
  • the circuit wiring 18 no longer has a bonding point. Therefore, the area of the circuit substrate 16 can be reduced for the same circuit function, and the circuit board size of the prior art is generally small.
  • the design is 64 mm ⁇ 30 mm, and the circuit board of the present embodiment is designed to be 50 mm ⁇ 25 mm, which embodies the miniaturization effect after the bonding wire is not required.
  • the second process 804 refers to FIG. 4(A) and FIG. 4(B):
  • the second step 804 of the present invention is a step of the present invention, and this step is a step of forming an independent lead 11 with a plating layer.
  • Each of the leads 11 is made of a copper substrate, and is formed into a strip shape having a length C of 25 mm, a width K of 1.5 mm, and a thickness H of 1 mm, as shown in Fig. 4(A); here, for ease of assembly, Pressing a certain arc at one end, as shown in Figure 4 (B);
  • a nickel layer is formed by electroless plating: a nickel layer is formed on the surface of the copper material having a specific shape by a mixed solution of a nickel salt and a sodium hypophosphite, and a suitable complexing agent is added, and the nickel metal is strong in the metal nickel. Passivation ability, can quickly form a very thin passivation film, resistant to atmospheric, alkali and some acid corrosion.
  • the nickel-plated crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 ⁇ m;
  • the copper material having the formed shape and the nickel layer is immersed in the plating solution with the positive tin ions at room temperature to form a nickel-tin alloy layer on the surface of the nickel layer, and the thickness of the nickel layer is generally controlled at 5 ⁇ m.
  • the formation of the nickel layer greatly improves the protection and solderability;
  • the pin 11 of the present invention is a single pin, which is different from the entire row of pins of the prior art, because the circuit wiring 18 to which the pin 11 is fixed is only wrapped by a resin portion.
  • the impact strength is limited, and the separate pins avoid the process of cutting the ribs, and the systemic impact on the smart power module 10 of the present invention can be reduced.
  • the third step 806 of the present invention is a step of the present invention. This step is a step of flip-chip bonding the circuit element 14 on the surface of the circuit wiring 18 and arranging the lead pins 11.
  • the fabricated circuit wiring 18 is connected to the side view of FIG. 5 (A) and the top view of FIG. 5 (B).
  • a solder paste printing machine a solder paste is used to apply a solder paste to a specific position of the circuit wiring 18, and the steel mesh can be used with a thickness of 0.13 mm.
  • the circuit component 14 is formed by an apparatus such as an SMT machine or a DA machine, including the circuit component 14 on which the heat sink 15 has been disposed, and the mounting of the pin 11, which can be directly flipped over the circuit wiring 18.
  • the specific position, and the pin 11 is placed on the pad 18A at one end, and the carrier 20 is required to be fixed at the other end, and the carrier 20 is made of a material such as synthetic stone.
  • the circuit substrate 16 placed on the carrier 20 is reflowed, the solder paste is cured, and the circuit component 14 and the lead 11 are fixed.
  • the reflow temperature generally does not exceed 300 ° C, and therefore, the power element 14 and the heat sink 15 are not separated at the time of reflow.
  • the fourth step 908 of the present invention is a step of the present invention, and this step is a step of sealing the circuit wiring 18 with the sealing resin 12.
  • FIG. 6 is a cross-sectional view showing a step of sealing the circuit wiring 18 carried by the base 16 with a sealing resin using a mold 50.
  • the circuit wiring 18 is baked in an oxygen-free environment, the baking time should not be less than 2 hours, the baking temperature and the selection of 125 °C.
  • the base 16 on which the circuit board 18 is placed is transported to the models 44 and 45.
  • the positioning of the circuit substrate 16 is performed by bringing a specific portion of the pin 11 into contact with the fixture 46.
  • the circuit substrate 16 is placed in a cavity formed inside the mold 50, and then the sealing resin is injected from the gate 53 to form the sealing layer 12.
  • the method of performing the sealing can be carried out by transfer molding using a thermosetting resin or injection molding using a thermosetting resin. Further, the gas inside the cavity of the sealing resin 12 injected corresponding to the gate 103 is discharged to the outside through the exhaust port 54.
  • the upper mold 44 and the lower mold 45 are not in contact with the module 10.
  • the position of the module 10 in the cavity is sometimes also used in the manner in which the upper mold 44 is disposed with the ejector pin.
  • Positioning the disadvantage is that it will leave air holes for the module 10, which affects the compactness of the module.
  • This embodiment is shown to maximize the compactness of the module 10, and the thimble is not configured for the upper mold; because the solution mainly applies the field of small and medium power modules. Thickness requirements for the sealing layer 12 on the bottom surface of the circuit substrate 16 Not strict, at ⁇ 0.5mm, so no thimble positioning is required.
  • the surface of the heat sink and the bottom surface of the circuit substrate 16 are exposed from the sealing layer 12. If the sealing layer 12 overflows heavily, a laser can be added to remove the glue or grind. The process of the glue.
  • the fifth step 810 of the present invention is a process of performing the pin 11 molding and the module function test, and the smart power module is completed as a product through this process.
  • the portion other than the lead 11 is sealed by the resin 12. This step is required according to the length and shape used, for example, the outer lead 11 is bent into a shape at the position of the broken line 51 to facilitate subsequent assembly.
  • the pins 11 are independent of each other, some pins may not be on the same level after molding, which affects the contact, so it is generally necessary to first test the machine gold finger. Contact test with the pin. If the contact test does not pass, the pin 11 needs to be trimmed until the contact test passes, and then the electrical characteristic test is performed, including insulation withstand voltage, static power consumption, delay time, etc. For the project, the qualified person is the finished product.
  • the smart power module 10 shown in Fig. 2 is completed by the above steps.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • the smart power module includes a substrate 16, an insulating layer 17, a circuit wiring (circuit wiring) 18, and a circuit component 14. a circuit, and a pin 11 disposed at an edge of the circuit wiring 18, and a sealing layer 12 that seals the circuit and completely covers the circuit element 14 and the upper surface of the insulating layer 17.
  • 9(A) is a top plan view of the upper surface of the smart power module 10 of the present invention, the heat sink 15 is exposed from the upper surface
  • FIG. 9(B) is a cross section taken along line XX' of FIG. 9(A).
  • 9(C) is a plan view showing the sealing layer 12 covering the circuit component 14 removed
  • FIG. 9(D) is a plan view showing the lower surface of the smart power module 10 of the present invention.
  • the substrate 16 acts as a carrier for the smart power module 10 and has a first surface and a second surface opposite the first surface.
  • An insulating layer 17 is disposed on the first surface of the substrate 16, wherein the insulating layer 17 A through hole 70 penetrating the substrate 16 is opened at a predetermined position.
  • the circuit wiring layer 18 is formed on the surface of the insulating layer 17, wherein a predetermined potential pad 18B is electrically connected to the substrate 16 through the through hole 70; the circuit component 14 is reversed and soldered a predetermined position on the upper surface of the circuit wiring layer 18; a heat sink 15 mounted on the power element in the circuit component 14; a sealing layer 12 covering the surface of the insulating layer 17, the circuit wiring layer 18 and the circuit component 14 Covering and exposing a portion of the surface of the heat sink 15 to the surface.
  • the power component is a planar power device, such as an IGBT transistor, and an LIGBT must be used.
  • the power component included in circuit component 14 is a low power component that can be dissipated without the use of a heat sink. Even if a heat sink is required, the heat sink is mounted on the power component in the circuit component.
  • the sealing layer 12 is coated on the surface of the insulating layer 17, the surface of the heat sink is exposed; the heat sink is a heat sink, and the surface of the heat sink can be considered. Electroplating silver treatment is carried out to increase the wettability.
  • the sealing layer is a sealing resin layer.
  • a pin pad 18A there is a special circuit wiring for configuring the pin 11, which is referred to as a pin pad 18A.
  • the pin 11 pin pad 18A is connected and extends from the outside of the circuit wiring 18.
  • the surface of the lead is covered with a plating layer.
  • a certain potential of the circuit wiring 18, such as the GND potential, is set to a wider potential pad 18B.
  • the diameter of the potential pad 18B should not be less than 5 mm, and the potential pad 18B is opened through.
  • the circuit wiring 18 and the insulating layer 17 expose the through hole 70 of the aluminum substrate 16.
  • the diameter of the through hole 70 should not be less than 3 mm and cannot be larger than the potential pad 18B, and the depth of the through hole 70 is just exposed.
  • the substrate 16 is preferably not more than 1.5 mm.
  • the circuit board 16 is a rectangular plate material made of aluminum such as 1050 or 5052.
  • an aluminum material of 1050 may be used, and in order to increase the hardness, an aluminum material of 5052 may be selected; in order to increase the withstand voltage, the aluminum material may be anodized, and in order to improve heat dissipation, anodization may not be performed.
  • the thickness of the circuit substrate 16 can be designed to be 1.5 mm to 2.0 mm.
  • the insulating layer 17 located on one surface of the substrate 16 can be designed to have a thickness of 100 ⁇ m to 200 ⁇ m and a thermal conductivity of 2 W/(m*K) to 3 W/(m*K).
  • the thickness is selected to be 100 ⁇ m.
  • the thickness may be selected to be 200 ⁇ m, and the thickness should generally not exceed 200 ⁇ m.
  • the thicker the thickness of the insulating layer is selected the higher the thermal conductivity should be selected accordingly.
  • the circuit wiring 18 is formed by stamping or etching a copper material having a thickness of 2 ounces or more. To prevent oxidation, the upper surface of the circuit wiring 18 may be subjected to gold plating treatment, and the circuit wiring 18 is provided for cost. The surface can also be silver plated or shipped in a vacuum or nitrogen-filled package with no treatment on the upper surface.
  • the circuit component 14 is flip-chip mounted on the circuit wiring 18.
  • the circuit element 14 uses an active element such as a transistor or a diode, or a passive element such as a capacitor or a resistor. Further, the heat sink 15 made of copper or the like is attached to the back surface of the element having a large amount of heat such as a power element.
  • solder solder
  • the lead 11 is generally made of a metal such as copper.
  • the surface of the copper is formed by electroless plating and electroplating to form a layer of nickel-tin alloy.
  • the thickness of the alloy layer is generally 5 ⁇ m.
  • the plating layer protects the copper from corrosion and oxidation and improves solderability.
  • the pin 11 may be disposed at one of the edges of the smart power module 10, or may be disposed at two opposite edges of the smart power module 10, or may be disposed at three edges of the smart power module 10, or Located at four edges of the smart power module 10;
  • the sealing layer 12 may be molded by a transfer molding using a thermosetting resin or an injection molding using a thermoplastic resin.
  • the sealing layer 12 completely seals all the elements on one side of the circuit wiring 18.
  • the lower surface of the circuit substrate 16 is also covered by the sealing layer 12, so that the moisture resistance of the smart power module 10 is improved; here, since the power component is also completely sealed by the sealing layer 12,
  • the sealing layer 12 should generally select a material with more angular crystals to improve its thermal conductivity.
  • the sealing layer 12 has a leakage tracking capability of not less than 500V.
  • the beneficial effect of the intelligent power module is that the circuit components, including the small and medium power circuit components, are electrically connected by flip-chip method, and the metal bonding wire is no longer needed, thereby saving the cost; Grease seal to maximize the resistance to moisture ingress; even if external moisture invades, it is difficult to form corrosion because there is no metal wire.
  • the substrate is connected to a certain potential of the circuit wiring, so that the substrate obtains the specific potential, shielding the electromagnetic interference and avoiding the occurrence of false triggering.
  • a method of manufacturing the smart power module including the following steps:
  • Step S1010 manufacturing a substrate as a carrier, covering the first surface of the substrate with an insulating layer; wherein the substrate further has a second surface opposite to the first surface;
  • Step S1020 opening a through hole penetrating the substrate at a predetermined position of the insulating layer
  • Step S1030 a circuit wiring layer is disposed on the surface of the insulating layer, and a potential pad electrically connected to the substrate through the through hole is preset in the circuit wiring layer;
  • Step S1040 assembling a circuit component on a surface of the circuit wiring layer, wherein the circuit component is assembled in an inverted manner;
  • Step S1050 covering a surface of the insulating layer with a sealing layer to cover the circuit wiring layer and the circuit component.
  • thermosetting resin frame is provided around the surface of the insulating layer; specifically, a thermoplastic resin is injected in the range of the thermosetting resin frame to seal the circuit wiring layer, the circuit component, and the substrate.
  • step S1040 Also included prior to step S1040 is the step of making separate, coated pins.
  • the step specifically includes: selecting a copper substrate, forming a row of pins by punching or etching the copper substrate, connecting the pins through the ribs; forming a nickel layer and a nickel tin on the surface of the lead The alloy layer gives a plated lead.
  • the method further includes the steps of: soldering the circuit component to the circuit wiring layer by reflow soldering; and removing the flux remaining in the insulating layer.
  • the fully encapsulated technology injection ensures the compactness of the intelligent power module to the greatest extent, which improves the reliability of the intelligent power module; eliminates the metal wire bonding and cleaning process, further improves the reliability of the intelligent power module, and saves
  • the equipment investment has improved the production efficiency, reduced the process control requirements, greatly reduced the manufacturing difficulty of the intelligent power module, improved the manufacturing yield, and further reduced the intelligence.
  • the cost of the power module has improved the production efficiency, reduced the process control requirements, greatly reduced the manufacturing difficulty of the intelligent power module, improved the manufacturing yield, and further reduced the intelligence.
  • the method of manufacturing the smart power module includes the following steps.
  • the first step 1602 of the present invention is a step of the present invention, and the step is a step of forming a circuit wiring on an aluminum plate of an appropriate size.
  • a circuit board 16 of a suitable size is designed according to a required circuit layout.
  • one size can be selected to be 64 mm ⁇ 30 mm, and the short sides of three pieces are connected to each other with a size of 50 mm ⁇ 75mm, forming a triple-plate unit composed of three smart power modules 10 metal circuit substrates 16.
  • An insulating layer 17 is provided on the surface of the aluminum substrate 16. Further, a copper foil as the circuit wiring 18 is bonded to the surface of the insulating layer 17. Then, the copper foil produced in this step is etched to partially remove the copper foil to form the circuit wiring 18, the lead pad 18A, and the wider potential pad 18B.
  • the through hole 70 can be formed on the potential pad 18B by a flat bottom drill or a pointed drill.
  • the flat bottom drill can ensure a large contact area of the substrate 16, but the drill has a short life and the sharp bottom drill can ensure The substrate 16 is drilled through the exposed success rate, but the exposed area of the aluminum substrate 16 is generally small.
  • the through hole 70 is opened by using a flat-bottomed drill, and the contact surface of the flat bottom is exposed on the substrate 16.
  • the aluminum substrate of a suitable size is formed by directly processing a 1 m ⁇ 1 m aluminum material, and the file is made of high-speed steel, and the motor is rotated at 5000 rpm, and the boring tool and the aluminum material are used.
  • the plane is cut at a right angle to make the edge of the 1100 aluminum material at right angles, and the burr is less than 10 ⁇ m. It can also be etched into a specific shape by chemical reaction through an etching tool. Referring to the X-X' line of FIG. 11(A), FIG. 11(B) is a cross-sectional view.
  • a gold layer may be formed on the surface of the circuit wiring 18 by means of electroplating gold or chemical immersion gold.
  • the thickness of the copper plate used to manufacture the circuit wiring 18 should be not less than 2 ounces, ensuring sufficient flow capacity.
  • the triple plate unit is sometimes separated by a V-CUT method, and the V-CUT can prevent the insulating layer 17 from being cracked during punching, thereby improving the long-term reliability of the smart power module 10.
  • the circuit wiring 18 no longer has a bonding point. Therefore, the area of the circuit substrate 16 can be reduced for the same circuit function, and the circuit board size of the prior art is generally small.
  • the design is 64 mm ⁇ 30 mm, and the circuit board of the present embodiment is designed to be 50 mm ⁇ 25 mm, which embodies the miniaturization effect after the bonding wire is not required.
  • the effect of the increased potential pad 18B on the area of the circuit wiring 18 is negligible.
  • the second step 1604 of the present invention is a step which is a feature of the present invention, and this step is a step of forming an independent lead 11 with a plating layer.
  • Each of the leads 11 is made of a copper substrate, and is formed into a strip shape having a length C of 25 mm, a width K of 1.5 mm, and a thickness H of 1 mm, as shown in Fig. 12(A); here, for ease of assembly, Pressing a certain arc at one end, as shown in Figure 12 (B);
  • a nickel layer is formed by electroless plating: a nickel layer is formed on the surface of the copper material having a specific shape by a mixed solution of a nickel salt and a sodium hypophosphite, and a suitable complexing agent is added, and the nickel metal is strong in the metal nickel. Passivation ability, can quickly form a very thin passivation film, resistant to atmospheric, alkali and some acid corrosion.
  • the nickel-plated crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 ⁇ m;
  • the copper material having the formed shape and the nickel layer is immersed in the plating solution with the positive tin ions at room temperature to form a nickel-tin alloy layer on the surface of the nickel layer, and the thickness of the nickel layer is generally controlled at 5 ⁇ m.
  • the formation of the nickel layer greatly improves the protection and solderability;
  • the pin 11 of the present invention is a single pin, which is different from the entire row of pins of the prior art, because the circuit wiring 18 to which the pin 11 is fixed is only wrapped by a resin portion.
  • the impact strength is limited, and the separate pins avoid the process of cutting the ribs, and the systemic impact on the smart power module 10 of the present invention can be reduced.
  • the entire row of pins can still be used.
  • the third step 1606 of the present invention is a step of the present invention. This step is a step of flip-chip bonding the circuit element 14 on the surface of the circuit wiring 18 and arranging the lead pins 11.
  • the solder paste is sprayed into the through hole 70 by the dispenser 71, and the through hole 70 may be placed with solder paste by means of dispensing or by sputtering.
  • the height of the solder paste may be the same as or slightly higher than the height of the through hole 70, but the minimum height must exceed the insulating layer 17, reaching the circuit wiring 18 to ensure contact with the circuit wiring 70.
  • the prepared circuit wiring 18 is passed through a solder paste printer, and a steel mesh is used to apply a solder paste to a specific position of the circuit wiring 18, the steel mesh A thickness of 0.13 mm can be used.
  • the substrate 16 on which the solder paste is applied on the circuit wiring 18 is placed on the carrier 20, and the circuit component 14 is formed by an apparatus such as an SMT machine or a DA machine, including the circuit component 14 on which the heat sink 15 has been disposed. And the mounting of the pin 11, the circuit component 14 can be directly flipped at a specific position of the circuit wiring 18, and the pin 11 is placed on the pad 18A at one end, and the carrier 20 is required to be fixed at the other end.
  • the carrier 20 is made of a material such as synthetic stone.
  • the circuit substrate 16 placed on the carrier 20 is reflowed, the solder paste is cured, and the circuit component 14 and the lead 11 are fixed.
  • the reflow temperature generally does not exceed 300 ° C, and therefore, the power element 14 and the heat sink 15 are not separated at the time of reflow.
  • the fourth step 1608 of the present invention is a step of the present invention, and this step is a step of sealing the circuit wiring 18 with the sealing resin 12.
  • FIG. 14 is a cross-sectional view showing a step of sealing the circuit wiring 18 carried by the base 16 with a sealing resin using a mold 50.
  • the circuit wiring 18 is baked in an oxygen-free environment, the baking time should not be less than 2 hours, the baking temperature and the selection of 125 °C.
  • the base 16 on which the circuit board 18 is placed is transported to the models 44 and 45. By making A specific portion of the foot 11 is in contact with the fixture 46 to perform positioning of the circuit substrate 16.
  • the circuit substrate 16 is placed in a cavity formed inside the mold 50, and then the sealing resin is injected from the gate 53 to form the sealing layer 12.
  • the method of performing the sealing can be carried out by transfer molding using a thermosetting resin or injection molding using a thermosetting resin. Further, the gas inside the cavity of the sealing resin 12 injected corresponding to the gate 103 is discharged to the outside through the exhaust port 54.
  • the upper mold 44 and the lower mold 45 are not in contact with the module 10.
  • the position of the module 10 in the cavity is sometimes also used in the manner in which the upper mold 44 is disposed with the ejector pin.
  • Positioning the disadvantage is that it will leave air holes for the module 10, which affects the compactness of the module.
  • This embodiment is shown to maximize the compactness of the module 10, and the thimble is not configured for the upper mold; because the solution mainly applies the field of small and medium power modules.
  • the thickness of the sealing layer 12 on the bottom surface of the circuit substrate 16 is not critical, and is ⁇ 0.5 mm, so thimble positioning is not required.
  • the surface of the heat sink and the bottom surface of the circuit substrate 16 are exposed from the sealing layer 12. If the sealing layer 12 overflows heavily, a laser can be added to remove the glue or grind. The process of the glue.
  • the fifth step 1610 of the present invention is a process of performing the pin 11 molding and the module function test, and the smart power module is completed as a product through this process.
  • the portion other than the lead 11 is sealed by the resin 12. This step is required according to the length and shape used, for example, the outer lead 11 is bent into a shape at the position of the broken line 51 to facilitate subsequent assembly.
  • the pins 11 are independent of each other, some pins may not be on the same level after molding, which affects the contact, so it is generally necessary to first test the machine gold finger. Contact test with the pin. If the contact test does not pass, the pin 11 needs to be trimmed until the contact test passes, and then the electrical characteristic test is performed, including insulation withstand voltage, static power consumption, delay time, etc. For the project, the qualified person is the finished product.
  • the smart power module 10 shown in FIG. 10 is completed by the above steps.

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Abstract

Provided are an intelligent power module and a method for manufacturing same. The intelligent power module comprises: a substrate (16) serving as a carrier and having a first surface and a second surface opposite to the first surface; an insulating layer (17) provided at a first surface of the substrate; a circuit wiring layer (18) formed at the surface of the insulating layer; circuit elements (14) reversely mounted and welded at predetermined locations on an upper surface of the circuit wiring layer; and a sealing layer (12) coated at the surface of the insulating layer and covering the circuit wiring layer and the circuit elements. The circuit elements are electrically connected in a reverse mounting mode, no metal binding wire is needed any more, and the cost is saved. A radiating fin and an aluminum substrate are fully exposed outside resin, and the radiating effect is maximized. Even if external moisture invades, it is hard to cause corrosion because there is no metal wire.

Description

一种智能功率模块及其制造方法Intelligent power module and manufacturing method thereof
本申请要求于2016年07月29日提交中国专利局、申请号为201610624916.3、发明名称为“一种智能功率模块及其制造方法”的中国专利申请的优先权，要求于2016年07月29日提交中国专利局、申请号为201610616070.9、发明名称为“一种智能功率模块及其制造方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims priority to Chinese Patent Application No. 201610624916.3, entitled "Intelligent Power Module and Its Manufacturing Method", filed on July 29, 2016, and is required to be filed on July 29, 2016. The priority of the Chinese Patent Application, which is hereby incorporated by reference in its entirety in its entirety in the the the the the the the the the
技术领域Technical field
本发明属于电子器件制造工艺领域，尤其涉及一种智能功率模块及其制造方法。The invention belongs to the field of electronic device manufacturing processes, and in particular relates to an intelligent power module and a manufacturing method thereof.
背景技术Background technique
智能功率模块(Intelligent Power Module，IPM)是一种将电力电子和集成电路技术结合的功率驱动类产品。IPM把功率开关器件和高压驱动电路集成在一起，并内藏有过电压、过电流和过热等故障检测电路。IPM一方面接收MCU的控制信号，驱动后续电路工作，另一方面将系统的状态检测信号送回MCU。与传统分立方案相比，IPM以其高集成度、高可靠性等优势赢得越来越大的市场，尤其适合于驱动电机的变频器及各种逆变电源，是变频调速，冶金机械，电力牵引，伺服驱动，变频家电的一种理想电力电子器件。The Intelligent Power Module (IPM) is a power-driven product that combines power electronics and integrated circuit technology. The IPM integrates a power switching device and a high voltage driving circuit, and has built-in fault detection circuits such as overvoltage, overcurrent, and overheating. On the one hand, the IPM receives the control signal of the MCU, drives the subsequent circuit to work, and on the other hand sends the status detection signal of the system back to the MCU. Compared with traditional discrete solutions, IPM has won more and more large markets with its high integration and high reliability. It is especially suitable for inverters and various inverter power supplies for driving motors. It is frequency control and metallurgical machinery. An ideal power electronic device for electric traction, servo drive, and frequency conversion appliances.
智能功率模块一般会工作在恶劣的工况中，如变频空调的室外机，高温高湿的状态下，高温会使智能功率模块内部温度升高，对于现行智能功率模块被所述密封树脂完全密封的结构，智能功率模块内部非常容易产生热积聚，高湿会使水气通过所述密封树脂与引脚之间的间隙进入所述智能功率模块的内部电路，所述智能功率模块内部的高温使离子，特别是氯离子和溴离子在水气的作 用下发生迁移，对金属线产生腐蚀，这种腐蚀往往出现在金属线与电路元件或金属线与所述电路布线的结合部，导致开路，对智能功率模块构成致命破坏，严重时会使智能功率模块发生失控爆炸事故，对其应用环境构成损害，造成重大经济损失。The intelligent power module generally works in harsh working conditions, such as the outdoor unit of the inverter air conditioner. Under high temperature and high humidity, the high temperature will increase the internal temperature of the intelligent power module, and the current intelligent power module is completely sealed by the sealing resin. The structure of the smart power module is very easy to generate heat accumulation, and high humidity causes water vapor to enter the internal circuit of the intelligent power module through the gap between the sealing resin and the lead, and the high temperature inside the smart power module makes Ions, especially chloride and bromide in water and gas The migration occurs under the metal, causing corrosion to the metal wire. This corrosion often occurs at the junction of the metal wire and the circuit component or the metal wire and the circuit wiring, resulting in an open circuit, causing fatal damage to the intelligent power module, and seriously causing intelligence. The power module has an uncontrolled explosion accident, which causes damage to its application environment and causes major economic losses.
另外，智能功率模块有不同功率的器件，对于不同功率的器件，金属线的材质和粗细各不相同，增加了智能功率模块的加工难度，购买不同的邦线设备还增加了加工成本，并且，多种邦线工艺的组合使所述智能功率模块的制造直通率变低，生产良率难以提高。最终导致所述智能功率模块的成本居高不下，影响了智能功率模块的普及应用。In addition, the intelligent power module has different power devices. For different power devices, the material and thickness of the metal wires are different, which increases the processing difficulty of the intelligent power module. The purchase of different state-of-the-line devices also increases the processing cost, and The combination of various bonding processes makes the manufacturing pass-through rate of the intelligent power module low, and the production yield is difficult to increase. As a result, the cost of the intelligent power module is high, which affects the popular application of the intelligent power module.
发明内容Summary of the invention
本发明旨在解决现有技术的不足，提供一种高可靠性的智能功率模块及适应此种结构的工序流程作为制造方法，可在保证智能功率模块有更良好接触可靠性的同时降低了智能功率模块的成本。The invention aims to solve the deficiencies of the prior art, and provides a high-reliability intelligent power module and a process flow adapted to the structure as a manufacturing method, which can reduce the intelligence while ensuring better contact reliability of the intelligent power module. The cost of the power module.
本发明的第一方面的实施例，提出了一种智能功率模块，包括：作为载体、具有第一表面和与该第一表面相对的第二表面的基板；设置于所述基板的第一表面的绝缘层；形成于所述绝缘层表面的电路布线层；倒扣并焊接于所述电路布线层的上表面预定位置的电路元件；及包覆于所述绝缘层的表面，将所述电路布线层和电路元件覆盖的密封层。An embodiment of the first aspect of the present invention provides an intelligent power module comprising: a substrate having a first surface and a second surface opposite to the first surface as a carrier; and a first surface disposed on the substrate An insulating layer; a circuit wiring layer formed on a surface of the insulating layer; a circuit component that is reversed and soldered to a predetermined position on an upper surface of the circuit wiring layer; and a surface coated on the surface of the insulating layer, the circuit A sealing layer covered by a wiring layer and circuit components.
进一步地，还包括引脚，所述电路布线层包括靠近边缘的引脚焊盘，所述引脚与所述引脚焊盘连接并自所述电路布线外延伸。Further, a pin is further included, the circuit wiring layer including a pin pad adjacent to the edge, the pin being connected to the pin pad and extending outside the circuit wiring.
进一步地，所述引脚表面覆盖有镀层。Further, the surface of the lead is covered with a plating layer.
进一步地，所述引脚至少设于所述智能功率模块的其中一个边缘。Further, the pin is disposed at least one edge of the smart power module.
进一步地，所述密封层还将所述基板包覆在内。Further, the sealing layer also covers the substrate.
进一步地，所述密封层为树脂层。Further, the sealing layer is a resin layer.
上述智能功率模块的有益效果是：通过倒装方式使电路元件行程电连接， 不再需要金属邦定线，节省了成本；将散热片和铝基板完全露出在树脂外面，最大限度提高散热效果；即使外部湿气内侵，因为已不存在金属线，已难以构成腐蚀。The beneficial effect of the above intelligent power module is that the circuit components are electrically connected by flip-chip method. The metal bonding line is no longer needed, which saves the cost; the heat sink and the aluminum substrate are completely exposed outside the resin to maximize the heat dissipation effect; even if the external moisture is invaded, it is difficult to form corrosion because there is no metal wire.
本发明的另一目的在于提供一种智能功率模块的制造方法，包括以下步骤：Another object of the present invention is to provide a method for manufacturing an intelligent power module, comprising the following steps:
制作作为载体的基板，于所述基板的第一表面覆盖绝缘层；其中，所述基板还具有与所述第一表面相对的第二表面；Forming a substrate as a carrier, covering the first surface of the substrate with an insulating layer; wherein the substrate further has a second surface opposite to the first surface;
于所述绝缘层表面布设电路布线层；Laying a circuit wiring layer on a surface of the insulating layer;
于所述电路布线层的表面装配电路元件，其中，所述电路元件以倒扣的方式装配；Assembling a circuit component on a surface of the circuit wiring layer, wherein the circuit component is assembled in an inverted manner;
于所述绝缘层的表面包覆密封层，将所述电路布线层和所述电路元件覆盖。A sealing layer is coated on the surface of the insulating layer to cover the circuit wiring layer and the circuit component.
上述智能功率模块的制造方法有益效果是：全包封技术注胶最大程度保证了智能功率模块的致密性，从而使智能功率模块的可靠性得到提高；免去了金属线邦定和清洗工序，进一步智能功率模块的可靠性，而且还节省了设备投入，提高了生产效率，降低了工艺管控要求，使智能功率模块的制造难度大幅下降，制造良率得到提高，进一步降低了智能功率模块的成本。The manufacturing method of the above intelligent power module has the beneficial effects that the full-encapsulation technology can ensure the compactness of the intelligent power module to the greatest extent, thereby improving the reliability of the intelligent power module; eliminating the metal wire bonding and cleaning process. Further reliability of the intelligent power module, but also saves equipment investment, improves production efficiency, reduces process control requirements, greatly reduces the manufacturing difficulty of the intelligent power module, improves the manufacturing yield, and further reduces the cost of the intelligent power module. .
本发明的第二方面的实施例，提出了一种智能功率模块，包括：作为载体、具有第一表面和与该第一表面相对的第二表面的基板；设置于所述基板的第一表面的绝缘层，其中，所述绝缘层预设位置开设有贯穿到所述基板的通孔；形成于所述绝缘层表面的电路布线层，其中，所述电路布线层上预设一电位焊盘通过所述通孔与所述基板电连接；倒扣并焊接于所述电路布线层的上表面预定位置的电路元件；及包覆于所述绝缘层的表面，将所述电路布线层和电路元件覆盖的密封层。An embodiment of the second aspect of the present invention provides an intelligent power module including: a substrate having a first surface and a second surface opposite to the first surface as a carrier; and a first surface disposed on the substrate The insulating layer, wherein the insulating layer is pre-positioned with a through hole penetrating the substrate; a circuit wiring layer formed on a surface of the insulating layer, wherein a potential pad is preset on the circuit wiring layer Electrically connecting to the substrate through the through hole; a circuit component that is reversed and soldered to a predetermined position on an upper surface of the circuit wiring layer; and a surface coated on the surface of the insulating layer, the circuit wiring layer and the circuit The sealing layer covered by the component.
进一步地，还包括引脚，所述电路布线层包括靠近边缘的引脚焊盘，所述引脚与所述引脚焊盘连接并自所述电路布线外延伸。Further, a pin is further included, the circuit wiring layer including a pin pad adjacent to the edge, the pin being connected to the pin pad and extending outside the circuit wiring.
进一步地，所述引脚表面覆盖有镀层。Further, the surface of the lead is covered with a plating layer.
进一步地，所述引脚至少设于所述智能功率模块的其中一个边缘。 Further, the pin is disposed at least one edge of the smart power module.
进一步地，所述密封层还将所述基板包覆在内。Further, the sealing layer also covers the substrate.
进一步地，所述密封层为树脂层。Further, the sealing layer is a resin layer.
上述智能功率模块的有益效果是：通过倒装方式使电路元件行程电连接，不再需要金属邦定线，节省了成本；将散热片和铝基板完全露出在树脂外面，最大限度提高散热效果；即使外部湿气内侵，因为已不存在金属线，已难以构成腐蚀；使基板与电路布线某一电位连接从而使基板获得该特定电位，对电磁干扰起屏蔽作用，避免误触发的发生。The beneficial effects of the above intelligent power module are: the electrical connection of the circuit components by the flip-chip method, the metal bonding wire is no longer needed, and the cost is saved; the heat sink and the aluminum substrate are completely exposed outside the resin to maximize the heat dissipation effect; Even if external moisture is invaded, it is difficult to form corrosion because there is no metal wire; the substrate is connected to a certain potential of the circuit wiring to obtain the specific potential of the substrate, shielding the electromagnetic interference and avoiding the occurrence of false triggering.
本发明的另一目的在于提供一种智能功率模块的制造方法，包括以下步骤：Another object of the present invention is to provide a method for manufacturing an intelligent power module, comprising the following steps:
制作作为载体的基板，于所述基板的第一表面覆盖绝缘层；其中，所述基板还具有与所述第一表面相对的第二表面；于所述绝缘层预设位置开设有贯穿到所述基板的通孔；于所述绝缘层表面布设电路布线层，并在所述电路布线层预设一通过所述通孔与所述基板电连接的电位焊盘；于所述电路布线层的表面装配电路元件，其中，所述电路元件以倒扣的方式装配；于所述绝缘层的表面包覆密封层，将所述电路布线层和所述电路元件覆盖。Forming a substrate as a carrier, the first surface of the substrate is covered with an insulating layer; wherein the substrate further has a second surface opposite to the first surface; and the insulating layer is provided at a predetermined position a through hole of the substrate; a circuit wiring layer is disposed on the surface of the insulating layer, and a potential pad electrically connected to the substrate through the through hole is preset in the circuit wiring layer; and the circuit wiring layer is The surface mount circuit component, wherein the circuit component is assembled in an inverted manner; a surface of the insulating layer is coated with a sealing layer to cover the circuit wiring layer and the circuit component.
上述智能功率模块的制造方法有益效果是：全包封技术注胶最大程度保证了智能功率模块的致密性，从而使智能功率模块的可靠性得到提高；免去了金属线邦定和清洗工序，进一步智能功率模块的可靠性，而且还节省了设备投入，提高了生产效率，降低了工艺管控要求，使智能功率模块的制造难度大幅下降，制造良率得到提高，进一步降低了智能功率模块的成本；另外，将铝基板形成特定电位的连接工序与元器件与电路布线形成电连接的工序统一，未增加制造方法难度。The manufacturing method of the above intelligent power module has the beneficial effects that the full-encapsulation technology can ensure the compactness of the intelligent power module to the greatest extent, thereby improving the reliability of the intelligent power module; eliminating the metal wire bonding and cleaning process. Further reliability of the intelligent power module, but also saves equipment investment, improves production efficiency, reduces process control requirements, greatly reduces the manufacturing difficulty of the intelligent power module, improves the manufacturing yield, and further reduces the cost of the intelligent power module. Further, the step of forming the aluminum substrate to form a specific potential and the step of electrically connecting the component and the circuit wiring are unified, and the manufacturing method is not increased.
附图说明DRAWINGS
图1(A)为本发明实施例提供的智能功率模块的俯视图；1(A) is a top plan view of an intelligent power module according to an embodiment of the present invention;
图1(B)是图1(A)中沿X-X’线的剖面图；Figure 1 (B) is a cross-sectional view taken along line X-X' in Figure 1 (A);
图1(C)是本发明的智能功率模块去掉密封层后的俯视图； 1(C) is a plan view of the smart power module of the present invention with the sealing layer removed;
图1(D)是本发明的智能功率模块的下表面俯视图；1(D) is a top plan view of the lower surface of the smart power module of the present invention;
图2为本发明实施例提供的智能功率模块的制造工艺流程图；2 is a flowchart of a manufacturing process of an intelligent power module according to an embodiment of the present invention;
图3(A)、3(B)分别是本发明智能功率模块的制造方法中制作电路布线的俯视和侧视工序示意图；3(A) and 3(B) are respectively a plan view and a side view process for fabricating a circuit wiring in the manufacturing method of the smart power module of the present invention;
图4(A)为引脚的尺寸标示图；Figure 4 (A) is a dimension drawing of the pin;
图4(B)为制作引脚的工序示意图；Figure 4 (B) is a schematic view of the process of making a lead;
图5(A)和5(B)分别为装配电路元件、引脚的侧视和俯视工序示意图；5(A) and 5(B) are schematic views showing side view and top view of assembled circuit components and leads, respectively;
图6为智能功率模块的制造方法的密封工序示意图；6 is a schematic view showing a sealing process of a method for manufacturing an intelligent power module;
图7为智能功率模块的制造方法的检测工序示意图；7 is a schematic diagram of a detecting process of a method for manufacturing an intelligent power module;
图8为智能功率模块的制造方法的工序流程图。8 is a process flow diagram of a method of manufacturing an intelligent power module.
图9(A)为本发明实施例提供的智能功率模块的俯视图；FIG. 9(A) is a top view of an intelligent power module according to an embodiment of the present invention;
图9(B)是图1(A)中沿X-X’线的剖面图；Figure 9 (B) is a cross-sectional view taken along line X-X' in Figure 1 (A);
图9(C)是本发明的智能功率模块去掉密封层后的俯视图；Figure 9 (C) is a plan view of the smart power module of the present invention with the sealing layer removed;
图9(D)是本发明的智能功率模块的下表面俯视图；Figure 9 (D) is a top plan view of the lower surface of the smart power module of the present invention;
图10为本发明实施例提供的智能功率模块的制造工艺流程图；10 is a flowchart of a manufacturing process of an intelligent power module according to an embodiment of the present invention;
图11(A)、11(B)分别是本发明智能功率模块的制造方法中制作电路布线的俯视和侧视工序示意图；11(A) and 11(B) are respectively a plan view and a side view process for fabricating a circuit wiring in the method of manufacturing the smart power module of the present invention;
图12(A)为引脚的尺寸标示图；Figure 12 (A) is a dimension drawing of the pin;
图12(B)为制作引脚的工序示意图；Figure 12 (B) is a schematic view showing the process of making a lead;
图13(A)、13(B)和13(C)分别为装配电路元件、引脚的侧视和俯视工序示意图；13(A), 13(B) and 13(C) are schematic views showing side view and top view of assembled circuit components and leads, respectively;
图14为智能功率模块的制造方法的密封工序示意图；14 is a schematic view showing a sealing process of a method of manufacturing an intelligent power module;
图15为智能功率模块的制造方法的检测工序示意图；15 is a schematic diagram of a detecting process of a method of manufacturing an intelligent power module;
图16为智能功率模块的制造方法的工序流程图。16 is a process flow diagram of a method of manufacturing an intelligent power module.
具体实施方式 detailed description
为了使本发明要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
实施例一：Embodiment 1:
如图1(A)、图1(B)、图1(C)、图1(D)所示，智能功率模块包括基板16、绝缘层17、电路布线(电路布线)18、电路元件14构成的电路，和配置在所述电路布线18边缘的引脚11，和密封该电路且完全覆盖所述电路元件14和所述绝缘层17上表面的密封层12。其中，图1(A)是本发明的智能功率模块10的上表面俯视图，所述散热片15从上表面露出，图1(B)是沿图1(A)的X-X’线的截面图，图1(C)是去掉覆盖所述电路元件14的所述密封层12后的俯视图，图1(D)是本发明的智能功率模块10的下表面俯视图。As shown in FIG. 1(A), FIG. 1(B), FIG. 1(C), and FIG. 1(D), the smart power module includes a substrate 16, an insulating layer 17, a circuit wiring (circuit wiring) 18, and a circuit component 14. a circuit, and a pin 11 disposed at an edge of the circuit wiring 18, and a sealing layer 12 that seals the circuit and completely covers the circuit element 14 and the upper surface of the insulating layer 17. 1(A) is a top plan view of the upper surface of the smart power module 10 of the present invention, the heat sink 15 is exposed from the upper surface, and FIG. 1(B) is a cross section taken along line XX' of FIG. 1(A). 1(C) is a plan view showing the sealing layer 12 covering the circuit component 14 removed, and FIG. 1(D) is a top plan view of the smart power module 10 of the present invention.
基板16作为智能功率模块10的载体，具有第一表面和与该第一表面相对的第二表面。绝缘层17设置于所述基板的第一表面。电路布线层18形成于所述绝缘层表面；电路元件14倒扣并焊接于所述电路布线层18的上表面预定位置；散热器15贴装于所述电路元件14中的功率元件；密封层12包覆于绝缘层17的表面，将电路布线层18和电路元件14覆盖，并使所述散热器15部分表面裸露。The substrate 16 acts as a carrier for the smart power module 10 and has a first surface and a second surface opposite the first surface. The insulating layer 17 is disposed on the first surface of the substrate. a circuit wiring layer 18 is formed on the surface of the insulating layer; the circuit component 14 is inverted and soldered to a predetermined position on the upper surface of the circuit wiring layer 18; a power component mounted on the circuit component 14 by the heat sink 15; a sealing layer 12 is coated on the surface of the insulating layer 17, covering the circuit wiring layer 18 and the circuit component 14, and the surface of the heat sink 15 is exposed.
具体地，功率元件为平面功率器件，如IGBT管，必须使用LIGBT。电路元件14包含的功率元件为小功率元件，可以不需要使用散热器散热。即使需要散热器，那么散热器贴装于所述电路元件中的功率元件，密封层12包覆于绝缘层17的表面时，将散热器表面裸露；散热器为散热片，散热片表面可以考虑进行电镀银处理，增加沁润性。密封层为密封树脂层。Specifically, the power component is a planar power device, such as an IGBT transistor, and an LIGBT must be used. The power component included in circuit component 14 is a low power component that can be dissipated without the use of a heat sink. Even if a heat sink is required, the heat sink is mounted on the power component in the circuit component. When the sealing layer 12 is coated on the surface of the insulating layer 17, the surface of the heat sink is exposed; the heat sink is a heat sink, and the surface of the heat sink can be considered. Electroplating silver treatment is carried out to increase the wettability. The sealing layer is a sealing resin layer.
进一步地，电路布线18的靠近至少一个边缘上，有用于配置引脚11的特殊的电路布线，称为引脚焊盘18A。引脚11引脚焊盘18A连接并自所述电路布线18外延伸。所述引脚表面覆盖有镀层。Further, on at least one edge of the circuit wiring 18, there is a special circuit wiring for configuring the pin 11, which is referred to as a pin pad 18A. The pin 11 pin pad 18A is connected and extends from the outside of the circuit wiring 18. The surface of the lead is covered with a plating layer.
以下说明这样的各构成要素。 Each of these constituent elements will be described below.
电路基板16是由1050、5052等材质的铝构成的矩形板材。在此，为了降低成本，可以使用1050的铝材，为了提高硬度，可以选择5052的铝材；为了提高耐压，可以对铝材进行阳极氧化处理，为了提高散热性，也可以不作阳极氧化。电路基板16的厚度可以设计为1.5mm～2.0mm。The circuit board 16 is a rectangular plate material made of aluminum such as 1050 or 5052. Here, in order to reduce the cost, an aluminum material of 1050 may be used, and in order to increase the hardness, an aluminum material of 5052 may be selected; in order to increase the withstand voltage, the aluminum material may be anodized, and in order to improve heat dissipation, anodization may not be performed. The thickness of the circuit substrate 16 can be designed to be 1.5 mm to 2.0 mm.
位于基板16其中一个表面的绝缘层17是可以设计为厚度100μm～200μm，热导率2W/(m*K)～3W/(m*K)，在此，为了节省成本并提高导热性，可以选择厚度100μm，为了提高耐压，可以选择厚度200μm，厚度一般不应超过200μm，在此，绝缘层的厚度选择得越厚，热导率应该相应选择得越高。The insulating layer 17 located on one surface of the substrate 16 can be designed to have a thickness of 100 μm to 200 μm and a thermal conductivity of 2 W/(m*K) to 3 W/(m*K). Here, in order to save cost and improve thermal conductivity, The thickness is selected to be 100 μm. In order to increase the withstand voltage, the thickness may be selected to be 200 μm, and the thickness should generally not exceed 200 μm. Here, the thicker the thickness of the insulating layer is selected, the higher the thermal conductivity should be selected accordingly.
电路布线18由厚度为2盎司以上的铜材通过冲压或刻蚀的形式制作而成，为了防止氧化，所述电路布线18的上表面可以进行镀金处理，为了成本，所述电路布线18的上表面也可以进行镀银处理，或者通过真空或充氮包装进行运输，上表面不作处理。The circuit wiring 18 is formed by stamping or etching a copper material having a thickness of 2 ounces or more. To prevent oxidation, the upper surface of the circuit wiring 18 may be subjected to gold plating treatment, and the circuit wiring 18 is provided for cost. The surface can also be silver plated or shipped in a vacuum or nitrogen-filled package with no treatment on the upper surface.
电路元件14被倒装固定在所述电路布线18上。所述电路元件14采用晶体管或二极管等有源元件、或者电容或电阻等无源元件。进一步地，通过由铜等制成的散热片15贴装在功率元件等发热量大的元件背面。The circuit component 14 is flip-chip mounted on the circuit wiring 18. The circuit element 14 uses an active element such as a transistor or a diode, or a passive element such as a capacitor or a resistor. Further, the heat sink 15 made of copper or the like is attached to the back surface of the element having a large amount of heat such as a power element.
在此，设计成一边上设有多条引脚11，其具有例如与外部进行输入、输出的作用。引脚11和引脚焊盘18A通过焊锡等导电性粘结剂焊接。Here, it is designed such that a plurality of pins 11 are provided on one side, and have functions of inputting and outputting, for example, from the outside. The lead 11 and the lead pad 18A are soldered by a conductive adhesive such as solder.
引脚11一般采用铜等金属制成，铜表面通过化学镀和电镀形成一层镍锡合金层，合金层的厚度一般为5μm，镀层可保护铜不被腐蚀氧化，并可提高可焊接性。在此，引脚11可以只设于智能功率模块10的其中一个边缘，也可以设于智能功率模块10的相对的两个边缘，也可以设于智能功率模块10的其中三个边缘，也可以设于智能功率模块10的四个边缘；The lead 11 is generally made of a metal such as copper. The surface of the copper is formed by electroless plating and electroplating to form a layer of nickel-tin alloy. The thickness of the alloy layer is generally 5 μm. The plating layer protects the copper from corrosion and oxidation and improves solderability. The pin 11 may be disposed at one of the edges of the smart power module 10, or may be disposed at two opposite edges of the smart power module 10, or may be disposed at three edges of the smart power module 10, or Located at four edges of the smart power module 10;
所述密封层12可通过传递模方式使用热硬性树脂模制也可使用注入模方式使用热塑性树脂模制。在此，所述密封层12完全密封所述电路布线18的一面上的所有元素。在此，所述电路基板16下表面也被所述密封层12覆盖，使智能功率模块10的耐潮湿能力得以提高；在此，因为所述功率元件也被所述密 封层12完全密封，所以，所述密封层12一般应该选择角型结晶较多的材料，以提高其热导率，可以考虑选择松下的3300系列或日立的3600系列；另外，为了保证所述智能功率模块10的可靠性，所述密封层12的漏电起痕能力不应低于500V。The sealing layer 12 may be molded by a transfer molding using a thermosetting resin or an injection molding using a thermoplastic resin. Here, the sealing layer 12 completely seals all the elements on one side of the circuit wiring 18. Here, the lower surface of the circuit substrate 16 is also covered by the sealing layer 12, so that the moisture resistance of the smart power module 10 is improved; here, because the power component is also densely The sealing layer 12 is completely sealed. Therefore, the sealing layer 12 should generally select a material with more angular crystals to improve its thermal conductivity. Considering the Panasonic 3300 series or the Hitachi 3600 series; in addition, in order to ensure the For the reliability of the smart power module 10, the leakage tracking capability of the sealing layer 12 should not be lower than 500V.
智能功率模块的有益效果是：通过倒装方式使电路元件，包括中小功率电路元件形成电连接，不再需要金属邦定线，节省了成本；将模块所有元素用树脂密封，最大限度提高抗水气进入效果；即使外部湿气内侵，因为已不存在金属线，已难以构成腐蚀。The beneficial effect of the intelligent power module is that the circuit components, including the small and medium power circuit components, are electrically connected by flip-chip method, eliminating the need for metal bonding wires, saving cost; sealing all the elements of the module with resin to maximize water resistance Gas entry effect; even if external moisture is invaded, it is difficult to form corrosion because there is no metal wire.
参考图2，说明所述智能功率模块的制造方法，包括以下步骤：Referring to FIG. 2, a method for manufacturing the smart power module is provided, including the following steps:
步骤S110，制作作为载体的基板，于所述基板的第一表面覆盖绝缘层；其中，所述基板还具有与所述第一表面相对的第二表面；Step S110, manufacturing a substrate as a carrier, covering the first surface of the substrate with an insulating layer; wherein the substrate further has a second surface opposite to the first surface;
步骤S120，于所述绝缘层表面布设电路布线层；Step S120, laying a circuit wiring layer on the surface of the insulating layer;
步骤S130，于所述电路布线层的表面装配电路元件，其中，所述电路元件以倒扣的方式装配；Step S130, assembling a circuit component on a surface of the circuit wiring layer, wherein the circuit component is assembled in an inverted manner;
步骤S140，于所述绝缘层的表面包覆密封层，将所述电路布线层和所述电路元件覆盖。Step S140, covering a surface of the insulating layer with a sealing layer to cover the circuit wiring layer and the circuit component.
步骤S140具体为：在所述绝缘层的表面周围设置热硬性树脂框；在所述热硬性树脂框的范围内注入热塑性树脂以密封所述电路布线层、电路元件及所述基板。Step S140 specifically includes: providing a thermosetting resin frame around the surface of the insulating layer; and injecting a thermoplastic resin into the range of the thermosetting resin frame to seal the circuit wiring layer, the circuit component, and the substrate.
在步骤S130之前还包括：制成独立的带镀层的引脚的步骤。该步骤具体包括：选取铜基材，对铜基材通过冲压或蚀刻的方式，制成一排引脚，引脚之间通过加强筋连接；在所述引脚表面依次形成镍层和镍锡合金层，得到带镀层的引脚。Also included before step S130 is the step of making a separate coated pin. The step specifically includes: selecting a copper substrate, forming a row of pins by punching or etching the copper substrate, connecting the pins through the ribs; forming a nickel layer and a nickel tin on the surface of the lead The alloy layer gives a plated lead.
在步骤S140之前还包括以下步骤：通过回流焊焊接所述电路元件于所述电路布线层成上；清除残留在所述绝缘层的助焊剂。Before the step S140, the method further comprises the steps of: soldering the circuit component to the circuit wiring layer by reflow soldering; and removing the flux remaining in the insulating layer.
全包封技术注胶最大程度保证了智能功率模块的致密性，从而使智能功率 模块的可靠性得到提高；免去了金属线邦定和清洗工序，进一步智能功率模块的可靠性，而且还节省了设备投入，提高了生产效率，降低了工艺管控要求，使智能功率模块的制造难度大幅下降，制造良率得到提高，进一步降低了智能功率模块的成本。Fully encapsulated technology injection ensures maximum compactness of the intelligent power module, thus enabling intelligent power The reliability of the module is improved; the metal wire bonding and cleaning process are eliminated, the reliability of the intelligent power module is further improved, the equipment investment is saved, the production efficiency is improved, the process control requirements are reduced, and the intelligent power module is manufactured. The difficulty is greatly reduced, the manufacturing yield is improved, and the cost of the intelligent power module is further reduced.
在更具体的实施例中，结合图3(A)至图8，智能功率模块的制造方法包括以下工序。In a more specific embodiment, in conjunction with FIGS. 3(A) through 8, the method of manufacturing the smart power module includes the following steps.
如图8所示，第一工序802，参照图3(A)和3(B)：As shown in FIG. 8, the first process 802, referring to FIGS. 3(A) and 3(B):
本发明的第一工序802是作为本发明特征的工序，本工序是在大小合适的铝板上形成电路布线的工序。The first step 802 of the present invention is a step of the present invention, and the step is a step of forming a circuit wiring on an aluminum plate of an appropriate size.
首先，参照图3(A)，根据需要的电路布局设计大小合适的电路基板16，对于一般的智能功率模块，一枚的大小可选取64mm×30mm，三枚的短边相连的大小为50mm×75mm，形成一个由三枚智能功率模块10金属电路基板16组成的三联板单元。在铝基板16的表面上设有绝缘层17。另外，在绝缘层17的表面粘贴有作为电路布线18的铜箔。然后将该工序制造的铜箔进行蚀刻，局部地除去铜箔，形成所述电路布线18及引脚焊盘18A。First, referring to FIG. 3(A), a circuit board 16 of a suitable size is designed according to the required circuit layout. For a general intelligent power module, one size can be selected as 64 mm×30 mm, and the short sides of three pieces are connected to each other with a size of 50 mm× 75mm, forming a triple-plate unit composed of three smart power modules 10 metal circuit substrates 16. An insulating layer 17 is provided on the surface of the aluminum substrate 16. Further, a copper foil as the circuit wiring 18 is bonded to the surface of the insulating layer 17. Then, the copper foil produced in this step is etched to partially remove the copper foil to form the circuit wiring 18 and the lead pad 18A.
在此，大小合适的铝基板的形成是通过直接对1m×1m的铝材进行锣板处理的方式形成，锣刀使用高速钢作为材质，马达使用5000转/分钟的转速，锣刀与铝材平面呈直角下刀，可以使1100铝材的边缘呈直角，毛刺小于10μm，也可通过蚀刻工具，通过化学反应刻蚀出特定的形状。参考延图3(A)的X-X’线剖面图3(B)。Here, the aluminum substrate of a suitable size is formed by directly processing a 1 m×1 m aluminum material, and the file is made of high-speed steel, and the motor is rotated at 5000 rpm, and the boring tool and the aluminum material are used. The plane is cut at a right angle to make the edge of the 1100 aluminum material at right angles, and the burr is less than 10μm. It can also be etched into a specific shape by chemical reaction through an etching tool. Referring to the X-X' line of FIG. 3(A), FIG. 3(B) is a cross-sectional view.
在对抗氧化要求很高的场合，可以通过电镀金或化学沉金的方式，在所述电路布线18表面形成金层。In the case where the anti-oxidation requirement is high, a gold layer may be formed on the surface of the circuit wiring 18 by means of electroplating gold or chemical immersion gold.
在此，用于制造所述电路布线18的铜板的厚度应该不小于2盎司，保证有足够的通流能力。Here, the thickness of the copper plate used to manufacture the circuit wiring 18 should be not less than 2 ounces, ensuring sufficient flow capacity.
在此，有时也用V-CUT方式将所述三联板单元分开，V-CUT可避免所述绝缘层17在冲压时发生裂损，从而提高所述智能功率模块10的长期可靠性。 Here, the triple plate unit is sometimes separated by a V-CUT method, and the V-CUT can prevent the insulating layer 17 from being cracked during punching, thereby improving the long-term reliability of the smart power module 10.
在此，因为不再需要邦线工序，所述电路布线18上也不再具备邦定点，因此，对于相同的电路功能，所述电路基板16的面积可以缩小，既有技术的电路基板大小一般设计为64mm×30mm，而本实施例的电路基板设计为50mm×25mm，体现了不需要邦定线后的小型化效果。Here, since the bonding process is no longer required, the circuit wiring 18 no longer has a bonding point. Therefore, the area of the circuit substrate 16 can be reduced for the same circuit function, and the circuit board size of the prior art is generally small. The design is 64 mm × 30 mm, and the circuit board of the present embodiment is designed to be 50 mm × 25 mm, which embodies the miniaturization effect after the bonding wire is not required.
第二工序804，参照图4(A)和图4(B)：The second process 804 refers to FIG. 4(A) and FIG. 4(B):
本发明的第二工序804是作为本发明特征的工序，本工序是制成独立的带镀层的引脚11的工序。The second step 804 of the present invention is a step of the present invention, and this step is a step of forming an independent lead 11 with a plating layer.
每个引脚11都是用铜基材，制成长度C为25mm，宽度K为1.5mm，厚度H为1mm的长条状，如图4(A)所示；在此，为便于装配，在其中一端压制出一定的弧度，如图4(B)所示；Each of the leads 11 is made of a copper substrate, and is formed into a strip shape having a length C of 25 mm, a width K of 1.5 mm, and a thickness H of 1 mm, as shown in Fig. 4(A); here, for ease of assembly, Pressing a certain arc at one end, as shown in Figure 4 (B);
然后通过化学镀的方法形成镍层：通过镍盐和次亚磷酸钠混合溶液，并添加了适当的络合剂，在已形成特定形状的铜材表面形成镍层，在金属镍具有很强的钝化能力，能迅速生成一层极薄的钝化膜，能抵抗大气、碱和某些酸的腐蚀。镀镍结晶极细小，镍层厚度一般为0.1μm；Then, a nickel layer is formed by electroless plating: a nickel layer is formed on the surface of the copper material having a specific shape by a mixed solution of a nickel salt and a sodium hypophosphite, and a suitable complexing agent is added, and the nickel metal is strong in the metal nickel. Passivation ability, can quickly form a very thin passivation film, resistant to atmospheric, alkali and some acid corrosion. The nickel-plated crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 μm;
接着通过酸性硫酸盐工艺，在室温下将已形成形状和镍层的铜材浸在带有正锡离子的镀液中通电，在镍层表面形成镍锡合金层，镍层厚度一般控制在5μm，镍层的形成极大提高了保护性和可焊性；Then, through the acidic sulfate process, the copper material having the formed shape and the nickel layer is immersed in the plating solution with the positive tin ions at room temperature to form a nickel-tin alloy layer on the surface of the nickel layer, and the thickness of the nickel layer is generally controlled at 5 μm. The formation of the nickel layer greatly improves the protection and solderability;
到此，所述引脚11制造完成。At this point, the pin 11 is manufactured.
在此，本发明的所述引脚11是一个个单独的引脚，不同于现行技术的整排引脚，因为所述引脚11被固定在的所述电路布线18仅通过树脂部分包裹固定，抗冲击强度有限，单独的引脚避免了切除加强筋的工序，能够降低对本发明的智能功率模块10的系统性冲击。Here, the pin 11 of the present invention is a single pin, which is different from the entire row of pins of the prior art, because the circuit wiring 18 to which the pin 11 is fixed is only wrapped by a resin portion. The impact strength is limited, and the separate pins avoid the process of cutting the ribs, and the systemic impact on the smart power module 10 of the present invention can be reduced.
第三工序806，参考图5(A)和5(B)：The third process 806, with reference to Figures 5(A) and 5(B):
本发明的第三工序806是作为本发明特征的工序，本工序是在电路布线18表面倒装电路元件14和配置所述引脚11的工序。The third step 806 of the present invention is a step of the present invention. This step is a step of flip-chip bonding the circuit element 14 on the surface of the circuit wiring 18 and arranging the lead pins 11.
首先，参照侧视图图5(A)和俯视图图5(B)将制作好的电路布线18通 过锡膏印刷机，使用钢网，对所述电路布线18的特定位置进行锡膏涂装，钢网可使用0.13mm的厚度。通过SMT机或DA机等设备，进行电路元件14，包括已经配置所述散热片15的电路元件14，和引脚11的安装，所述电路元件14可直接倒装在所述电路布线18的特定位置，而引脚11则一端要安放在所述焊盘18A上，另一端需要载具20进行固定，所述载具20通过合成石等材料制成。First, the fabricated circuit wiring 18 is connected to the side view of FIG. 5 (A) and the top view of FIG. 5 (B). Through a solder paste printing machine, a solder paste is used to apply a solder paste to a specific position of the circuit wiring 18, and the steel mesh can be used with a thickness of 0.13 mm. The circuit component 14 is formed by an apparatus such as an SMT machine or a DA machine, including the circuit component 14 on which the heat sink 15 has been disposed, and the mounting of the pin 11, which can be directly flipped over the circuit wiring 18. The specific position, and the pin 11 is placed on the pad 18A at one end, and the carrier 20 is required to be fixed at the other end, and the carrier 20 is made of a material such as synthetic stone.
然后，放于所述载具20上的所述电路基板16通过回流焊，锡膏固化，所述电路元件14和所述引脚11被固定。Then, the circuit substrate 16 placed on the carrier 20 is reflowed, the solder paste is cured, and the circuit component 14 and the lead 11 are fixed.
在此，回流温度一般不超过300℃，因此，所述功率元件14和所述散热片15不会在回流时分离。Here, the reflow temperature generally does not exceed 300 ° C, and therefore, the power element 14 and the heat sink 15 are not separated at the time of reflow.
第四工序908，参照图6：Fourth process 908, referring to Figure 6:
本发明的第四工序908是作为本发明特征的工序，本工序是说明由密封树脂12密封电路布线18的工序。图6表示使用模具50由密封树脂密封被所述底座16承载的电路布线18的工序的剖面图。The fourth step 908 of the present invention is a step of the present invention, and this step is a step of sealing the circuit wiring 18 with the sealing resin 12. FIG. 6 is a cross-sectional view showing a step of sealing the circuit wiring 18 carried by the base 16 with a sealing resin using a mold 50.
首先，在无氧环境中对电路布线18进行烘烤，烘烤时间不应小于2小时，烘烤温度和选择125℃。First, the circuit wiring 18 is baked in an oxygen-free environment, the baking time should not be less than 2 hours, the baking temperature and the selection of 125 °C.
将配置好所述电路基板18的所述底座16搬送到模型44及45。通过使引脚11的特定部分与固定装置46接触，进行所述电路基板16的定位。The base 16 on which the circuit board 18 is placed is transported to the models 44 and 45. The positioning of the circuit substrate 16 is performed by bringing a specific portion of the pin 11 into contact with the fixture 46.
合模时，在形成于模具50内部的模腔中放置电路基板16，然后由浇口53注入密封树脂形成密封层12。进行密封的方法可采用使用热硬性树脂的传递模模制或使用热硬性树脂的注入模模制。而且，对应自浇口53注入的密封树脂12模腔内部的气体通过排气口54排放到外部。At the time of mold clamping, the circuit substrate 16 is placed in a cavity formed inside the mold 50, and then the sealing resin is injected from the gate 53 to form the sealing layer 12. The method of performing the sealing can be carried out by transfer molding using a thermosetting resin or injection molding using a thermosetting resin. Further, the gas inside the cavity of the sealing resin 12 injected corresponding to the gate 103 is discharged to the outside through the exhaust port 54.
在此，上模44和下模45不与模块10产生接触，为了便于模块10的模腔中的定位，有时也使用在上模44配置顶针的方式，对模块10在模腔中的位置进行定位，缺点是会为模块10留下气孔，影响模块的致密性，本实施例示出于最大程度提高模块10致密性考虑，未为上模配置顶针；因为本方案主要应用了中小功率模块的领域，对于所述电路基板16底面的所述密封层12的厚度要求 并不严格，在±0.5mm，所以不需要顶针定位。Here, the upper mold 44 and the lower mold 45 are not in contact with the module 10. In order to facilitate the positioning in the cavity of the module 10, the position of the module 10 in the cavity is sometimes also used in the manner in which the upper mold 44 is disposed with the ejector pin. Positioning, the disadvantage is that it will leave air holes for the module 10, which affects the compactness of the module. This embodiment is shown to maximize the compactness of the module 10, and the thimble is not configured for the upper mold; because the solution mainly applies the field of small and medium power modules. Thickness requirements for the sealing layer 12 on the bottom surface of the circuit substrate 16 Not strict, at ±0.5mm, so no thimble positioning is required.
脱模后，如果加装散热器，则散热器的表面和电路基板16底面从所述密封层12露出，如果所述密封层12溢胶严重，可以通过追加一个激光除溢胶或研磨除溢胶的工序。After the demolding, if a heat sink is added, the surface of the heat sink and the bottom surface of the circuit substrate 16 are exposed from the sealing layer 12. If the sealing layer 12 overflows heavily, a laser can be added to remove the glue or grind. The process of the glue.
第五工序810，参照图7：In the fifth process 810, refer to FIG. 7:
本发明第五工序810是进行所述引脚11成型和模块功能测试的工序，智能功率模块经由此工序作为制品完成。The fifth step 810 of the present invention is a process of performing the pin 11 molding and the module function test, and the smart power module is completed as a product through this process.
在前工序即传递模模装工序使除引脚11以外的其他部分都被树脂12密封。本工序根据使用的长度和形状需要，例如，在虚线51的位置将外部引脚11折弯成一定形状，便于后续装配。In the pre-process, that is, the transfer mold mounting process, the portion other than the lead 11 is sealed by the resin 12. This step is required according to the length and shape used, for example, the outer lead 11 is bent into a shape at the position of the broken line 51 to facilitate subsequent assembly.
然后将模块放入测试设备中，进行常规的电参数测试，因为所述引脚11相互独立，成型后可能会有部分引脚不在同一水平面上，影响接触，所以一般需要先进行测试机金手指与引脚的接触测试，如果接触测试不通过，需要对所述引脚11进行修调处理，直到接触测试通过后，再进行电气特性测试，包括绝缘耐压、静态功耗、迟延时间等测试项目，测试合格者为成品。Then put the module into the test equipment and perform the normal electrical parameter test. Because the pins 11 are independent of each other, some pins may not be on the same level after molding, which affects the contact, so it is generally necessary to first test the machine gold finger. Contact test with the pin. If the contact test does not pass, the pin 11 needs to be trimmed until the contact test passes, and then the electrical characteristic test is performed, including insulation withstand voltage, static power consumption, delay time, etc. For the project, the qualified person is the finished product.
利用上述工序，完成图2所示的智能功率模块10。The smart power module 10 shown in Fig. 2 is completed by the above steps.
实施例二：Embodiment 2:
如图9(A)、图9(B)、图9(C)、图9(D)所示，智能功率模块包括基板16、绝缘层17、电路布线(电路布线)18、电路元件14构成的电路，和配置在所述电路布线18边缘的引脚11，和密封该电路且完全覆盖所述电路元件14和所述绝缘层17上表面的密封层12。其中，图9(A)是本发明的智能功率模块10的上表面俯视图，所述散热片15从上表面露出，图9(B)是沿图9(A)的X-X’线的截面图，图9(C)是去掉覆盖所述电路元件14的所述密封层12后的俯视图，图9(D)是本发明的智能功率模块10的下表面俯视图。As shown in FIG. 9(A), FIG. 9(B), FIG. 9(C), and FIG. 9(D), the smart power module includes a substrate 16, an insulating layer 17, a circuit wiring (circuit wiring) 18, and a circuit component 14. a circuit, and a pin 11 disposed at an edge of the circuit wiring 18, and a sealing layer 12 that seals the circuit and completely covers the circuit element 14 and the upper surface of the insulating layer 17. 9(A) is a top plan view of the upper surface of the smart power module 10 of the present invention, the heat sink 15 is exposed from the upper surface, and FIG. 9(B) is a cross section taken along line XX' of FIG. 9(A). 9(C) is a plan view showing the sealing layer 12 covering the circuit component 14 removed, and FIG. 9(D) is a plan view showing the lower surface of the smart power module 10 of the present invention.
基板16作为智能功率模块10的载体，具有第一表面和与该第一表面相对的第二表面。绝缘层17设置于所述基板16的第一表面，其中，所述绝缘层17 预设位置开设有贯穿到所述基板16的通孔70。电路布线层18形成于所述绝缘层17表面，其中，所述电路布线层18上预设一电位焊盘18B通过所述通孔70与所述基板16电连接；电路元件14倒扣并焊接于所述电路布线层18的上表面预定位置；散热器15贴装于所述电路元件14中的功率元件；密封层12包覆于绝缘层17的表面，将电路布线层18和电路元件14覆盖，并使所述散热器15部分表面裸露。The substrate 16 acts as a carrier for the smart power module 10 and has a first surface and a second surface opposite the first surface. An insulating layer 17 is disposed on the first surface of the substrate 16, wherein the insulating layer 17 A through hole 70 penetrating the substrate 16 is opened at a predetermined position. The circuit wiring layer 18 is formed on the surface of the insulating layer 17, wherein a predetermined potential pad 18B is electrically connected to the substrate 16 through the through hole 70; the circuit component 14 is reversed and soldered a predetermined position on the upper surface of the circuit wiring layer 18; a heat sink 15 mounted on the power element in the circuit component 14; a sealing layer 12 covering the surface of the insulating layer 17, the circuit wiring layer 18 and the circuit component 14 Covering and exposing a portion of the surface of the heat sink 15 to the surface.
具体地，功率元件为平面功率器件，如IGBT管，必须使用LIGBT。电路元件14包含的功率元件为小功率元件，可以不需要使用散热器散热。即使需要散热器，那么散热器贴装于所述电路元件中的功率元件，密封层12包覆于绝缘层17的表面时，将散热器表面裸露；散热器为散热片，散热片表面可以考虑进行电镀银处理，增加沁润性。密封层为密封树脂层。Specifically, the power component is a planar power device, such as an IGBT transistor, and an LIGBT must be used. The power component included in circuit component 14 is a low power component that can be dissipated without the use of a heat sink. Even if a heat sink is required, the heat sink is mounted on the power component in the circuit component. When the sealing layer 12 is coated on the surface of the insulating layer 17, the surface of the heat sink is exposed; the heat sink is a heat sink, and the surface of the heat sink can be considered. Electroplating silver treatment is carried out to increase the wettability. The sealing layer is a sealing resin layer.
进一步地，电路布线18的靠近至少一个边缘上，有用于配置引脚11的特殊的电路布线，称为引脚焊盘18A。引脚11引脚焊盘18A连接并自所述电路布线18外延伸。所述引脚表面覆盖有镀层。Further, on at least one edge of the circuit wiring 18, there is a special circuit wiring for configuring the pin 11, which is referred to as a pin pad 18A. The pin 11 pin pad 18A is connected and extends from the outside of the circuit wiring 18. The surface of the lead is covered with a plating layer.
在此，所述电路布线18的某一特定电位，如GND电位，设置成一个较宽的电位焊盘18B，该电位焊盘18B的直径不应小于5mm，该电位焊盘18B开设上一个贯穿电路布线18以及所述绝缘层17，露出所述铝基板16的通孔70，所述通孔70的直径不应小于3mm并且不能大于电位焊盘18B，所述通孔70的深度以刚好露出所述基板16为佳，不应大于1.5mm。Here, a certain potential of the circuit wiring 18, such as the GND potential, is set to a wider potential pad 18B. The diameter of the potential pad 18B should not be less than 5 mm, and the potential pad 18B is opened through. The circuit wiring 18 and the insulating layer 17 expose the through hole 70 of the aluminum substrate 16. The diameter of the through hole 70 should not be less than 3 mm and cannot be larger than the potential pad 18B, and the depth of the through hole 70 is just exposed. The substrate 16 is preferably not more than 1.5 mm.
以下说明这样的各构成要素。Each of these constituent elements will be described below.
电路基板16是由1050、5052等材质的铝构成的矩形板材。在此，为了降低成本，可以使用1050的铝材，为了提高硬度，可以选择5052的铝材；为了提高耐压，可以对铝材进行阳极氧化处理，为了提高散热性，也可以不作阳极氧化。电路基板16的厚度可以设计为1.5mm～2.0mm。The circuit board 16 is a rectangular plate material made of aluminum such as 1050 or 5052. Here, in order to reduce the cost, an aluminum material of 1050 may be used, and in order to increase the hardness, an aluminum material of 5052 may be selected; in order to increase the withstand voltage, the aluminum material may be anodized, and in order to improve heat dissipation, anodization may not be performed. The thickness of the circuit substrate 16 can be designed to be 1.5 mm to 2.0 mm.
位于基板16其中一个表面的绝缘层17是可以设计为厚度100μm～200μm，热导率2W/(m*K)～3W/(m*K)，在此，为了节省成本并提高导热性，可以 选择厚度100μm，为了提高耐压，可以选择厚度200μm，厚度一般不应超过200μm，在此，绝缘层的厚度选择得越厚，热导率应该相应选择得越高。The insulating layer 17 located on one surface of the substrate 16 can be designed to have a thickness of 100 μm to 200 μm and a thermal conductivity of 2 W/(m*K) to 3 W/(m*K). Here, in order to save cost and improve thermal conductivity, The thickness is selected to be 100 μm. In order to increase the withstand voltage, the thickness may be selected to be 200 μm, and the thickness should generally not exceed 200 μm. Here, the thicker the thickness of the insulating layer is selected, the higher the thermal conductivity should be selected accordingly.
电路布线18由厚度为2盎司以上的铜材通过冲压或刻蚀的形式制作而成，为了防止氧化，所述电路布线18的上表面可以进行镀金处理，为了成本，所述电路布线18的上表面也可以进行镀银处理，或者通过真空或充氮包装进行运输，上表面不作处理。The circuit wiring 18 is formed by stamping or etching a copper material having a thickness of 2 ounces or more. To prevent oxidation, the upper surface of the circuit wiring 18 may be subjected to gold plating treatment, and the circuit wiring 18 is provided for cost. The surface can also be silver plated or shipped in a vacuum or nitrogen-filled package with no treatment on the upper surface.
电路元件14被倒装固定在所述电路布线18上。所述电路元件14采用晶体管或二极管等有源元件、或者电容或电阻等无源元件。进一步地，通过由铜等制成的散热片15贴装在功率元件等发热量大的元件背面。The circuit component 14 is flip-chip mounted on the circuit wiring 18. The circuit element 14 uses an active element such as a transistor or a diode, or a passive element such as a capacitor or a resistor. Further, the heat sink 15 made of copper or the like is attached to the back surface of the element having a large amount of heat such as a power element.
在此，设计成一边上设有多条引脚11，其具有例如与外部进行输入、输出的作用。引脚11和引脚焊盘18A通过焊锡等导电电性粘结剂焊接。Here, it is designed such that a plurality of pins 11 are provided on one side, and have functions of inputting and outputting, for example, from the outside. The lead 11 and the lead pad 18A are soldered by a conductive electrical adhesive such as solder.
引脚11一般采用铜等金属制成，铜表面通过化学镀和电镀形成一层镍锡合金层，合金层的厚度一般为5μm，镀层可保护铜不被腐蚀氧化，并可提高可焊接性。在此，引脚11可以只设于智能功率模块10的其中一个边缘，也可以设于智能功率模块10的相对的两个边缘，也可以设于智能功率模块10的其中三个边缘，也可以设于智能功率模块10的四个边缘；The lead 11 is generally made of a metal such as copper. The surface of the copper is formed by electroless plating and electroplating to form a layer of nickel-tin alloy. The thickness of the alloy layer is generally 5 μm. The plating layer protects the copper from corrosion and oxidation and improves solderability. The pin 11 may be disposed at one of the edges of the smart power module 10, or may be disposed at two opposite edges of the smart power module 10, or may be disposed at three edges of the smart power module 10, or Located at four edges of the smart power module 10;
所述密封层12可通过传递模方式使用热硬性树脂模制也可使用注入模方式使用热塑性树脂模制。在此，所述密封层12完全密封所述电路布线18的一面上的所有元素。在此，所述电路基板16下表面也被所述密封层12覆盖，使智能功率模块10的耐潮湿能力得以提高；在此，因为所述功率元件也被所述密封层12完全密封，所以，所述密封层12一般应该选择角型结晶较多的材料，以提高其热导率，可以考虑选择松下的4300系列或日立的3600系列；另外，为了保证所述智能功率模块10的可靠性，所述密封层12的漏电起痕能力不应低于500V。The sealing layer 12 may be molded by a transfer molding using a thermosetting resin or an injection molding using a thermoplastic resin. Here, the sealing layer 12 completely seals all the elements on one side of the circuit wiring 18. Here, the lower surface of the circuit substrate 16 is also covered by the sealing layer 12, so that the moisture resistance of the smart power module 10 is improved; here, since the power component is also completely sealed by the sealing layer 12, The sealing layer 12 should generally select a material with more angular crystals to improve its thermal conductivity. Consider the Panasonic 4300 series or the Hitachi 3600 series; in addition, to ensure the reliability of the intelligent power module 10 The sealing layer 12 has a leakage tracking capability of not less than 500V.
智能功率模块的有益效果是：通过倒装方式使电路元件，包括中小功率电路元件形成电连接，不再需要金属邦定线，节省了成本；将模块所有元素用树 脂密封，最大限度提高抗水气进入效果；即使外部湿气内侵，因为已不存在金属线，已难以构成腐蚀。使基板与电路布线某一电位连接，从而使基板获得该特定电位，对电磁干扰起屏蔽作用，避免误触发的发生。The beneficial effect of the intelligent power module is that the circuit components, including the small and medium power circuit components, are electrically connected by flip-chip method, and the metal bonding wire is no longer needed, thereby saving the cost; Grease seal to maximize the resistance to moisture ingress; even if external moisture invades, it is difficult to form corrosion because there is no metal wire. The substrate is connected to a certain potential of the circuit wiring, so that the substrate obtains the specific potential, shielding the electromagnetic interference and avoiding the occurrence of false triggering.
参考图10，说明所述智能功率模块的制造方法，包括以下步骤：Referring to FIG. 10, a method of manufacturing the smart power module is illustrated, including the following steps:
步骤S1010，制作作为载体的基板，于所述基板的第一表面覆盖绝缘层；其中，所述基板还具有与所述第一表面相对的第二表面；Step S1010, manufacturing a substrate as a carrier, covering the first surface of the substrate with an insulating layer; wherein the substrate further has a second surface opposite to the first surface;
步骤S1020，于所述绝缘层预设位置开设有贯穿到所述基板的通孔；Step S1020, opening a through hole penetrating the substrate at a predetermined position of the insulating layer;
步骤S1030，于所述绝缘层表面布设电路布线层，并在所述电路布线层预设一通过所述通孔与所述基板电连接的电位焊盘；Step S1030, a circuit wiring layer is disposed on the surface of the insulating layer, and a potential pad electrically connected to the substrate through the through hole is preset in the circuit wiring layer;
步骤S1040，于所述电路布线层的表面装配电路元件，其中，所述电路元件以倒扣的方式装配；Step S1040, assembling a circuit component on a surface of the circuit wiring layer, wherein the circuit component is assembled in an inverted manner;
步骤S1050，于所述绝缘层的表面包覆密封层，将所述电路布线层和所述电路元件覆盖。Step S1050, covering a surface of the insulating layer with a sealing layer to cover the circuit wiring layer and the circuit component.
步骤S1060，在所述绝缘层的表面周围设置热硬性树脂框；具体为：在所述热硬性树脂框的范围内注入热塑性树脂以密封所述电路布线层、电路元件及所述基板。In step S1060, a thermosetting resin frame is provided around the surface of the insulating layer; specifically, a thermoplastic resin is injected in the range of the thermosetting resin frame to seal the circuit wiring layer, the circuit component, and the substrate.
在步骤S1040之前还包括：制成独立的带镀层的引脚的步骤。该步骤具体包括：选取铜基材，对铜基材通过冲压或蚀刻的方式，制成一排引脚，引脚之间通过加强筋连接；在所述引脚表面依次形成镍层和镍锡合金层，得到带镀层的引脚。Also included prior to step S1040 is the step of making separate, coated pins. The step specifically includes: selecting a copper substrate, forming a row of pins by punching or etching the copper substrate, connecting the pins through the ribs; forming a nickel layer and a nickel tin on the surface of the lead The alloy layer gives a plated lead.
在步骤S1050之前还包括以下步骤：通过回流焊焊接所述电路元件于所述电路布线层成上；清除残留在所述绝缘层的助焊剂。Before the step S1050, the method further includes the steps of: soldering the circuit component to the circuit wiring layer by reflow soldering; and removing the flux remaining in the insulating layer.
全包封技术注胶最大程度保证了智能功率模块的致密性，从而使智能功率模块的可靠性得到提高；免去了金属线邦定和清洗工序，进一步智能功率模块的可靠性，而且还节省了设备投入，提高了生产效率，降低了工艺管控要求，使智能功率模块的制造难度大幅下降，制造良率得到提高，进一步降低了智能 功率模块的成本。The fully encapsulated technology injection ensures the compactness of the intelligent power module to the greatest extent, which improves the reliability of the intelligent power module; eliminates the metal wire bonding and cleaning process, further improves the reliability of the intelligent power module, and saves The equipment investment has improved the production efficiency, reduced the process control requirements, greatly reduced the manufacturing difficulty of the intelligent power module, improved the manufacturing yield, and further reduced the intelligence. The cost of the power module.
在更具体的实施例中，结合图11(A)至图16，智能功率模块的制造方法包括以下工序。In a more specific embodiment, in conjunction with FIGS. 11(A) through 16, the method of manufacturing the smart power module includes the following steps.
如图16所示，第一工序1602，参照图11(A)和11(B)：As shown in FIG. 16, the first process 1602, with reference to FIGS. 11(A) and 11(B):
本发明的第一工序1602是作为本发明特征的工序，本工序是在大小合适的铝板上形成电路布线的工序。The first step 1602 of the present invention is a step of the present invention, and the step is a step of forming a circuit wiring on an aluminum plate of an appropriate size.
首先，参照图11(A)，根据需要的电路布局设计大小合适的电路基板16，对于一般的智能功率模块，一枚的大小可选取64mm×30mm，三枚的短边相连的大小为50mm×75mm，形成一个由三枚智能功率模块10金属电路基板16组成的三联板单元。在铝基板16的表面上设有绝缘层17。另外，在绝缘层17的表面粘贴有作为电路布线18的铜箔。然后将该工序制造的铜箔进行蚀刻，局部地除去铜箔，形成所述电路布线18、引脚焊盘18A及和较宽的电位焊盘18B。First, referring to FIG. 11(A), a circuit board 16 of a suitable size is designed according to a required circuit layout. For a general intelligent power module, one size can be selected to be 64 mm×30 mm, and the short sides of three pieces are connected to each other with a size of 50 mm× 75mm, forming a triple-plate unit composed of three smart power modules 10 metal circuit substrates 16. An insulating layer 17 is provided on the surface of the aluminum substrate 16. Further, a copper foil as the circuit wiring 18 is bonded to the surface of the insulating layer 17. Then, the copper foil produced in this step is etched to partially remove the copper foil to form the circuit wiring 18, the lead pad 18A, and the wider potential pad 18B.
在此，所述可以通过平底的钻头或尖底的钻头在电位焊盘18B上开设通孔70，平底钻头可保证基板16有较大的接触面积，但钻头寿命较短，尖底钻头可保证基板16被钻穿露出的成功率，但铝基板16露出面积一般较小，本实施例处于提高可靠性考虑，使用平底钻头开设通孔70，在基板16露出平底的接触台面。Here, the through hole 70 can be formed on the potential pad 18B by a flat bottom drill or a pointed drill. The flat bottom drill can ensure a large contact area of the substrate 16, but the drill has a short life and the sharp bottom drill can ensure The substrate 16 is drilled through the exposed success rate, but the exposed area of the aluminum substrate 16 is generally small. In this embodiment, in consideration of improving reliability, the through hole 70 is opened by using a flat-bottomed drill, and the contact surface of the flat bottom is exposed on the substrate 16.
在此，大小合适的铝基板的形成是通过直接对1m×1m的铝材进行锣板处理的方式形成，锣刀使用高速钢作为材质，马达使用5000转/分钟的转速，锣刀与铝材平面呈直角下刀，可以使1100铝材的边缘呈直角，毛刺小于10μm，也可通过蚀刻工具，通过化学反应刻蚀出特定的形状。参考延图11(A)的X-X’线剖面图11(B)。Here, the aluminum substrate of a suitable size is formed by directly processing a 1 m×1 m aluminum material, and the file is made of high-speed steel, and the motor is rotated at 5000 rpm, and the boring tool and the aluminum material are used. The plane is cut at a right angle to make the edge of the 1100 aluminum material at right angles, and the burr is less than 10μm. It can also be etched into a specific shape by chemical reaction through an etching tool. Referring to the X-X' line of FIG. 11(A), FIG. 11(B) is a cross-sectional view.
在对抗氧化要求很高的场合，可以通过电镀金或化学沉金的方式，在所述电路布线18表面形成金层。In the case where the anti-oxidation requirement is high, a gold layer may be formed on the surface of the circuit wiring 18 by means of electroplating gold or chemical immersion gold.
在此，用于制造所述电路布线18的铜板的厚度应该不小于2盎司，保证有足够的通流能力。 Here, the thickness of the copper plate used to manufacture the circuit wiring 18 should be not less than 2 ounces, ensuring sufficient flow capacity.
在此，有时也用V-CUT方式将所述三联板单元分开，V-CUT可避免所述绝缘层17在冲压时发生裂损，从而提高所述智能功率模块10的长期可靠性。Here, the triple plate unit is sometimes separated by a V-CUT method, and the V-CUT can prevent the insulating layer 17 from being cracked during punching, thereby improving the long-term reliability of the smart power module 10.
在此，因为不再需要邦线工序，所述电路布线18上也不再具备邦定点，因此，对于相同的电路功能，所述电路基板16的面积可以缩小，既有技术的电路基板大小一般设计为64mm×30mm，而本实施例的电路基板设计为50mm×25mm，体现了不需要邦定线后的小型化效果。而增加的电位焊盘18B对电路布线18面积的影响可以忽略。Here, since the bonding process is no longer required, the circuit wiring 18 no longer has a bonding point. Therefore, the area of the circuit substrate 16 can be reduced for the same circuit function, and the circuit board size of the prior art is generally small. The design is 64 mm × 30 mm, and the circuit board of the present embodiment is designed to be 50 mm × 25 mm, which embodies the miniaturization effect after the bonding wire is not required. The effect of the increased potential pad 18B on the area of the circuit wiring 18 is negligible.
第二工序1604，参照图12(A)和图12(B)：In the second step 1604, referring to FIG. 12(A) and FIG. 12(B):
本发明的第二工序1604是作为本发明特征的工序，本工序是制成独立的带镀层的引脚11的工序。The second step 1604 of the present invention is a step which is a feature of the present invention, and this step is a step of forming an independent lead 11 with a plating layer.
每个引脚11都是用铜基材，制成长度C为25mm，宽度K为1.5mm，厚度H为1mm的长条状，如图12(A)所示；在此，为便于装配，在其中一端压制出一定的弧度，如图12(B)所示；Each of the leads 11 is made of a copper substrate, and is formed into a strip shape having a length C of 25 mm, a width K of 1.5 mm, and a thickness H of 1 mm, as shown in Fig. 12(A); here, for ease of assembly, Pressing a certain arc at one end, as shown in Figure 12 (B);
然后通过化学镀的方法形成镍层：通过镍盐和次亚磷酸钠混合溶液，并添加了适当的络合剂，在已形成特定形状的铜材表面形成镍层，在金属镍具有很强的钝化能力，能迅速生成一层极薄的钝化膜，能抵抗大气、碱和某些酸的腐蚀。镀镍结晶极细小，镍层厚度一般为0.1μm；Then, a nickel layer is formed by electroless plating: a nickel layer is formed on the surface of the copper material having a specific shape by a mixed solution of a nickel salt and a sodium hypophosphite, and a suitable complexing agent is added, and the nickel metal is strong in the metal nickel. Passivation ability, can quickly form a very thin passivation film, resistant to atmospheric, alkali and some acid corrosion. The nickel-plated crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 μm;
接着通过酸性硫酸盐工艺，在室温下将已形成形状和镍层的铜材浸在带有正锡离子的镀液中通电，在镍层表面形成镍锡合金层，镍层厚度一般控制在5μm，镍层的形成极大提高了保护性和可焊性；Then, through the acidic sulfate process, the copper material having the formed shape and the nickel layer is immersed in the plating solution with the positive tin ions at room temperature to form a nickel-tin alloy layer on the surface of the nickel layer, and the thickness of the nickel layer is generally controlled at 5 μm. The formation of the nickel layer greatly improves the protection and solderability;
到此，所述引脚11制造完成。At this point, the pin 11 is manufactured.
在此，本发明的所述引脚11是一个个单独的引脚，不同于现行技术的整排引脚，因为所述引脚11被固定在的所述电路布线18仅通过树脂部分包裹固定，抗冲击强度有限，单独的引脚避免了切除加强筋的工序，能够降低对本发明的智能功率模块10的系统性冲击。有时，为了引脚装配方便，可仍使用整排引脚的形式。 Here, the pin 11 of the present invention is a single pin, which is different from the entire row of pins of the prior art, because the circuit wiring 18 to which the pin 11 is fixed is only wrapped by a resin portion. The impact strength is limited, and the separate pins avoid the process of cutting the ribs, and the systemic impact on the smart power module 10 of the present invention can be reduced. Sometimes, for pin assembly convenience, the entire row of pins can still be used.
第三工序1606，参考图13(A)、13(B)和13(C)：A third process 1606, with reference to Figures 13(A), 13(B) and 13(C):
本发明的第三工序1606是作为本发明特征的工序，本工序是在电路布线18表面倒装电路元件14和配置所述引脚11的工序。The third step 1606 of the present invention is a step of the present invention. This step is a step of flip-chip bonding the circuit element 14 on the surface of the circuit wiring 18 and arranging the lead pins 11.
首先，参考图13(A)，通过点胶机71，向通孔70喷入锡膏，可以通过点胶的方式，也可以通过喷锡的方式，使所述通孔70被配置锡膏，锡膏的高度可以与所述通孔70的高度一致或者略高，但最低高度一定要超过所述绝缘层17，到达所述电路布线18，保证与所述电路布线70接触。First, referring to FIG. 13(A), the solder paste is sprayed into the through hole 70 by the dispenser 71, and the through hole 70 may be placed with solder paste by means of dispensing or by sputtering. The height of the solder paste may be the same as or slightly higher than the height of the through hole 70, but the minimum height must exceed the insulating layer 17, reaching the circuit wiring 18 to ensure contact with the circuit wiring 70.
参照侧视图图13(A)和俯视图图13(B)，将制作好的电路布线18通过锡膏印刷机，使用钢网，对所述电路布线18的特定位置进行锡膏涂装，钢网可使用0.13mm的厚度。Referring to the side view of FIG. 13(A) and the top view of FIG. 13(B), the prepared circuit wiring 18 is passed through a solder paste printer, and a steel mesh is used to apply a solder paste to a specific position of the circuit wiring 18, the steel mesh A thickness of 0.13 mm can be used.
将在所述电路布线18上涂敷好锡膏的基板16放置在载具20上，通过SMT机或DA机等设备，进行电路元件14，包括已经配置所述散热片15的电路元件14，和引脚11的安装，所述电路元件14可直接倒装在所述电路布线18的特定位置，而引脚11则一端要安放在所述焊盘18A上，另一端需要载具20进行固定，所述载具20通过合成石等材料制成。The substrate 16 on which the solder paste is applied on the circuit wiring 18 is placed on the carrier 20, and the circuit component 14 is formed by an apparatus such as an SMT machine or a DA machine, including the circuit component 14 on which the heat sink 15 has been disposed. And the mounting of the pin 11, the circuit component 14 can be directly flipped at a specific position of the circuit wiring 18, and the pin 11 is placed on the pad 18A at one end, and the carrier 20 is required to be fixed at the other end. The carrier 20 is made of a material such as synthetic stone.
然后，放于所述载具20上的所述电路基板16通过回流焊，锡膏固化，所述电路元件14和所述引脚11被固定。Then, the circuit substrate 16 placed on the carrier 20 is reflowed, the solder paste is cured, and the circuit component 14 and the lead 11 are fixed.
在此，回流温度一般不超过300℃，因此，所述功率元件14和所述散热片15不会在回流时分离。Here, the reflow temperature generally does not exceed 300 ° C, and therefore, the power element 14 and the heat sink 15 are not separated at the time of reflow.
第四工序1608，参照图14：In the fourth step 1608, refer to FIG. 14:
本发明的第四工序1608是作为本发明特征的工序，本工序是说明由密封树脂12密封电路布线18的工序。图14表示使用模具50由密封树脂密封被所述底座16承载的电路布线18的工序的剖面图。The fourth step 1608 of the present invention is a step of the present invention, and this step is a step of sealing the circuit wiring 18 with the sealing resin 12. FIG. 14 is a cross-sectional view showing a step of sealing the circuit wiring 18 carried by the base 16 with a sealing resin using a mold 50.
首先，在无氧环境中对电路布线18进行烘烤，烘烤时间不应小于2小时，烘烤温度和选择125℃。First, the circuit wiring 18 is baked in an oxygen-free environment, the baking time should not be less than 2 hours, the baking temperature and the selection of 125 °C.
将配置好所述电路基板18的所述底座16搬送到模型44及45。通过使引 脚11的特定部分与固定装置46接触，进行所述电路基板16的定位。The base 16 on which the circuit board 18 is placed is transported to the models 44 and 45. By making A specific portion of the foot 11 is in contact with the fixture 46 to perform positioning of the circuit substrate 16.
合模时，在形成于模具50内部的模腔中放置电路基板16，然后由浇口53注入密封树脂形成密封层12。进行密封的方法可采用使用热硬性树脂的传递模模制或使用热硬性树脂的注入模模制。而且，对应自浇口53注入的密封树脂12模腔内部的气体通过排气口54排放到外部。At the time of mold clamping, the circuit substrate 16 is placed in a cavity formed inside the mold 50, and then the sealing resin is injected from the gate 53 to form the sealing layer 12. The method of performing the sealing can be carried out by transfer molding using a thermosetting resin or injection molding using a thermosetting resin. Further, the gas inside the cavity of the sealing resin 12 injected corresponding to the gate 103 is discharged to the outside through the exhaust port 54.
在此，上模44和下模45不与模块10产生接触，为了便于模块10的模腔中的定位，有时也使用在上模44配置顶针的方式，对模块10在模腔中的位置进行定位，缺点是会为模块10留下气孔，影响模块的致密性，本实施例示出于最大程度提高模块10致密性考虑，未为上模配置顶针；因为本方案主要应用了中小功率模块的领域，对于所述电路基板16底面的所述密封层12的厚度要求并不严格，在±0.5mm，所以不需要顶针定位。Here, the upper mold 44 and the lower mold 45 are not in contact with the module 10. In order to facilitate the positioning in the cavity of the module 10, the position of the module 10 in the cavity is sometimes also used in the manner in which the upper mold 44 is disposed with the ejector pin. Positioning, the disadvantage is that it will leave air holes for the module 10, which affects the compactness of the module. This embodiment is shown to maximize the compactness of the module 10, and the thimble is not configured for the upper mold; because the solution mainly applies the field of small and medium power modules. The thickness of the sealing layer 12 on the bottom surface of the circuit substrate 16 is not critical, and is ±0.5 mm, so thimble positioning is not required.
脱模后，如果加装散热器，则散热器的表面和电路基板16底面从所述密封层12露出，如果所述密封层12溢胶严重，可以通过追加一个激光除溢胶或研磨除溢胶的工序。After the demolding, if a heat sink is added, the surface of the heat sink and the bottom surface of the circuit substrate 16 are exposed from the sealing layer 12. If the sealing layer 12 overflows heavily, a laser can be added to remove the glue or grind. The process of the glue.
第五工序1610，参照图15：In the fifth step 1610, refer to FIG. 15:
本发明第五工序1610是进行所述引脚11成型和模块功能测试的工序，智能功率模块经由此工序作为制品完成。The fifth step 1610 of the present invention is a process of performing the pin 11 molding and the module function test, and the smart power module is completed as a product through this process.
在前工序即传递模模装工序使除引脚11以外的其他部分都被树脂12密封。本工序根据使用的长度和形状需要，例如，在虚线51的位置将外部引脚11折弯成一定形状，便于后续装配。In the pre-process, that is, the transfer mold mounting process, the portion other than the lead 11 is sealed by the resin 12. This step is required according to the length and shape used, for example, the outer lead 11 is bent into a shape at the position of the broken line 51 to facilitate subsequent assembly.
然后将模块放入测试设备中，进行常规的电参数测试，因为所述引脚11相互独立，成型后可能会有部分引脚不在同一水平面上，影响接触，所以一般需要先进行测试机金手指与引脚的接触测试，如果接触测试不通过，需要对所述引脚11进行修调处理，直到接触测试通过后，再进行电气特性测试，包括绝缘耐压、静态功耗、迟延时间等测试项目，测试合格者为成品。Then put the module into the test equipment and perform the normal electrical parameter test. Because the pins 11 are independent of each other, some pins may not be on the same level after molding, which affects the contact, so it is generally necessary to first test the machine gold finger. Contact test with the pin. If the contact test does not pass, the pin 11 needs to be trimmed until the contact test passes, and then the electrical characteristic test is performed, including insulation withstand voltage, static power consumption, delay time, etc. For the project, the qualified person is the finished product.
利用上述工序，完成图10所示的智能功率模块10。 The smart power module 10 shown in FIG. 10 is completed by the above steps.
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。 The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalents, and improvements made within the spirit and scope of the present invention should be included in the scope of the present invention. Inside.

Claims (20)

  1. 一种智能功率模块，其特征在于，包括：An intelligent power module, comprising:
    作为载体、具有第一表面和与该第一表面相对的第二表面的基板；a substrate having a first surface and a second surface opposite the first surface as a carrier;
    设置于所述基板的第一表面的绝缘层；An insulating layer disposed on the first surface of the substrate;
    形成于所述绝缘层表面的电路布线层；a circuit wiring layer formed on a surface of the insulating layer;
    倒扣并焊接于所述电路布线层的上表面预定位置的电路元件；及a circuit component that is reversed and soldered to a predetermined position on an upper surface of the circuit wiring layer; and
    包覆于所述绝缘层的表面，将所述电路布线层和电路元件覆盖的密封层。A sealing layer covering the surface of the insulating layer and covering the circuit wiring layer and the circuit component.
  2. 如权利要求1所述的智能功率模块，其特征在于，还包括引脚，所述电路布线层包括靠近边缘的引脚焊盘，所述引脚与所述引脚焊盘连接并自所述电路布线外延伸。The intelligent power module of claim 1 further comprising a lead, said circuit routing layer comprising a pin pad proximate the edge, said pin being coupled to said pin pad and said The circuit wiring extends outside.
  3. 如权利要求2所述的智能功率模块，其特征在于，所述引脚表面覆盖有镀层。The intelligent power module of claim 2 wherein said pin surface is covered with a plating.
  4. 如权利要求2所述的智能功率模块，其特征在于，所述引脚至少设于所述智能功率模块的其中一个边缘。The intelligent power module of claim 2 wherein said pin is disposed at least one of said edges of said smart power module.
  5. 如权利要求1至4中任一项所述的智能功率模块，其特征在于，所述密封层还将所述基板包覆在内。The intelligent power module according to any one of claims 1 to 4, wherein the sealing layer also covers the substrate.
  6. 如权利要求1至4中任一项所述的智能功率模块，其特征在于，所述密封层为树脂层。The intelligent power module according to any one of claims 1 to 4, wherein the sealing layer is a resin layer.
  7. 一种智能功率模块的制造方法，其特征在于，包括以下步骤：A method for manufacturing an intelligent power module, comprising the steps of:
    制作作为载体的基板，于所述基板的第一表面覆盖绝缘层；其中，所述基板还具有与所述第一表面相对的第二表面；Forming a substrate as a carrier, covering the first surface of the substrate with an insulating layer; wherein the substrate further has a second surface opposite to the first surface;
    于所述绝缘层表面布设电路布线层；Laying a circuit wiring layer on a surface of the insulating layer;
    于所述电路布线层的表面装配电路元件，其中，所述电路元件以倒扣的方式装配；Assembling a circuit component on a surface of the circuit wiring layer, wherein the circuit component is assembled in an inverted manner;
    于所述绝缘层的表面包覆密封层，将所述电路布线层和所述电路元件覆盖。A sealing layer is coated on the surface of the insulating layer to cover the circuit wiring layer and the circuit component.
  8. 如权利要求7所述的智能功率模块的制造方法，其特征在于，在于所述 绝缘层的表面包覆密封层，将所述电路元件覆盖并使所述散热器部分表面裸露的密封层步骤具体为：A method of manufacturing an intelligent power module according to claim 7, wherein said The surface of the insulating layer is covered with a sealing layer, and the sealing layer step of covering the circuit component and exposing the surface of the heat sink portion is specifically:
    在所述电路绝缘层的表面周围设置热硬性树脂框；Providing a thermosetting resin frame around the surface of the circuit insulating layer;
    在所述热硬性树脂框的范围内注入热塑性树脂以密封所述电路布线层、电路元件及所述基板。A thermoplastic resin is injected in the range of the thermosetting resin frame to seal the circuit wiring layer, the circuit component, and the substrate.
  9. 如权利要求7或8所述的智能功率模块的制造方法，其特征在于，在所述于所述电路布线层的表面装配电路元件步骤之前还包括：The method of manufacturing the smart power module according to claim 7 or 8, wherein before the step of assembling the circuit component on the surface of the circuit wiring layer, the method further comprises:
    制成独立的带镀层的引脚；具体包括：Made of independent coated pins; specifically:
    选取铜基材，对铜基材通过冲压或蚀刻的方式，制成一排引脚，引脚之间通过加强筋连接；Selecting a copper substrate, forming a row of pins by punching or etching the copper substrate, and connecting the pins through the reinforcing ribs;
    在所述引脚表面依次形成镍层和镍锡合金层，得到带镀层的引脚；Forming a nickel layer and a nickel-tin alloy layer on the surface of the lead to obtain a plated lead;
    通过回流焊焊接所述引脚于所述电路布线层边缘的引脚焊盘上。The pins are soldered to the pin pads on the edge of the circuit wiring layer by reflow soldering.
  10. 如权利要求7或8所述的智能功率模块的制造方法，其特征在于，在于所述绝缘层的表面包覆密封层，将所述电路元件覆盖并使所述散热器部分表面裸露的密封层步骤之前还包括以下步骤：The method of manufacturing an intelligent power module according to claim 7 or 8, wherein the surface of the insulating layer is covered with a sealing layer, and the circuit element is covered and the sealing layer of the surface of the heat sink portion is exposed. The steps also include the following steps:
    清除残留在所述绝缘层的助焊剂。The flux remaining in the insulating layer is removed.
  11. 一种智能功率模块，其特征在于，包括：An intelligent power module, comprising:
    作为载体、具有第一表面和与该第一表面相对的第二表面的基板；a substrate having a first surface and a second surface opposite the first surface as a carrier;
    设置于所述基板的第一表面的绝缘层，其中，所述绝缘层预设位置开设有贯穿到所述基板的通孔；An insulating layer disposed on the first surface of the substrate, wherein the insulating layer is pre-positioned with a through hole penetrating the substrate;
    形成于所述绝缘层表面的电路布线层，其中，所述电路布线层上预设一电位焊盘通过所述通孔与所述基板电连接；a circuit wiring layer formed on a surface of the insulating layer, wherein a predetermined potential pad on the circuit wiring layer is electrically connected to the substrate through the through hole;
    倒扣并焊接于所述电路布线层的上表面预定位置的电路元件；及a circuit component that is reversed and soldered to a predetermined position on an upper surface of the circuit wiring layer; and
    包覆于所述绝缘层的表面，将所述电路布线层和电路元件覆盖的密封层。A sealing layer covering the surface of the insulating layer and covering the circuit wiring layer and the circuit component.
  12. 如权利要求11所述的智能功率模块，其特征在于，还包括引脚，所述电路布线层包括靠近边缘的引脚焊盘，所述引脚与所述引脚焊盘连接并自所述 电路布线外延伸。The intelligent power module of claim 11 further comprising a lead, said circuit wiring layer comprising a pin pad adjacent the edge, said pin being coupled to said pin pad and said The circuit wiring extends outside.
  13. 如权利要求12所述的智能功率模块，其特征在于，所述引脚表面覆盖有镀层。The intelligent power module of claim 12 wherein said pin surface is covered with a plating.
  14. 如权利要求12所述的智能功率模块，其特征在于，所述引脚至少设于所述智能功率模块的其中一个边缘。The intelligent power module of claim 12 wherein said pin is disposed at least one of said edges of said smart power module.
  15. 如权利要求11至14中任一项所述的智能功率模块，其特征在于，所述密封层还将所述基板包覆在内。The intelligent power module according to any one of claims 11 to 14, wherein the sealing layer also covers the substrate.
  16. 如权利要求11至14中任一项所述的智能功率模块，其特征在于，所述密封层为树脂层。The intelligent power module according to any one of claims 11 to 14, wherein the sealing layer is a resin layer.
  17. 一种智能功率模块的制造方法，其特征在于，包括以下步骤：A method for manufacturing an intelligent power module, comprising the steps of:
    制作作为载体的基板，于所述基板的第一表面覆盖绝缘层；其中，所述基板还具有与所述第一表面相对的第二表面；Forming a substrate as a carrier, covering the first surface of the substrate with an insulating layer; wherein the substrate further has a second surface opposite to the first surface;
    于所述绝缘层预设位置开设有贯穿到所述基板的通孔；Providing a through hole penetrating the substrate at a predetermined position of the insulating layer;
    于所述绝缘层表面布设电路布线层，并在所述电路布线层预设一通过所述通孔与所述基板电连接的电位焊盘；a circuit wiring layer is disposed on the surface of the insulating layer, and a potential pad electrically connected to the substrate through the through hole is preset in the circuit wiring layer;
    于所述电路布线层的表面装配电路元件，其中，所述电路元件以倒扣的方式装配；Assembling a circuit component on a surface of the circuit wiring layer, wherein the circuit component is assembled in an inverted manner;
    于所述绝缘层的表面包覆密封层，将所述电路布线层和所述电路元件覆盖。A sealing layer is coated on the surface of the insulating layer to cover the circuit wiring layer and the circuit component.
  18. 如权利要求17所述的智能功率模块的制造方法，其特征在于，在于所述绝缘层的表面包覆密封层，将所述电路元件覆盖并使所述散热器部分表面裸露的密封层步骤具体为：The method of manufacturing an intelligent power module according to claim 17, wherein the surface of the insulating layer is coated with a sealing layer, and the step of sealing the circuit element and exposing the surface of the heat sink portion is specifically performed. for:
    在所述电路绝缘层的表面周围设置热硬性树脂框；Providing a thermosetting resin frame around the surface of the circuit insulating layer;
    在所述热硬性树脂框的范围内注入热塑性树脂以密封所述电路布线层、电路元件及所述基板。A thermoplastic resin is injected in the range of the thermosetting resin frame to seal the circuit wiring layer, the circuit component, and the substrate.
  19. 如权利要求17或18所述的智能功率模块的制造方法，其特征在于，在所述于所述电路布线层的表面装配电路元件步骤之前还包括： The method of manufacturing the smart power module according to claim 17 or 18, further comprising: before the step of assembling the circuit component on the surface of the circuit wiring layer:
    制成独立的带镀层的引脚；具体包括：Made of independent coated pins; specifically:
    选取铜基材，对铜基材通过冲压或蚀刻的方式，制成一排引脚，引脚之间通过加强筋连接；Selecting a copper substrate, forming a row of pins by punching or etching the copper substrate, and connecting the pins through the reinforcing ribs;
    在所述引脚表面依次形成镍层和镍锡合金层，得到带镀层的引脚；Forming a nickel layer and a nickel-tin alloy layer on the surface of the lead to obtain a plated lead;
    通过回流焊焊接所述引脚于所述电路布线层边缘的引脚焊盘上。The pins are soldered to the pin pads on the edge of the circuit wiring layer by reflow soldering.
  20. 如权利要求17或18所述的智能功率模块的制造方法，其特征在于，在在于所述绝缘层的表面包覆密封层，将所述电路元件覆盖并使所述散热器部分表面裸露的密封层步骤之前还包括以下步骤：The method of manufacturing an intelligent power module according to claim 17 or 18, wherein a sealing layer is coated on a surface of the insulating layer, and the circuit component is covered and the surface of the heat sink portion is exposed. The layer steps also include the following steps:
    清除残留在所述绝缘层的助焊剂。 The flux remaining in the insulating layer is removed.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114340175A (en) * 2022-01-10 2022-04-12 鹤山市泰利诺电子有限公司 Circuit board routing method
CN114666975A (en) * 2022-03-15 2022-06-24 广东汇芯半导体有限公司 Semiconductor circuit structure and manufacturing method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000007238A1 (en) * 1998-07-31 2000-02-10 Ixys Corporation Electrically isolated power semiconductor package
CN101432872A (en) * 2004-09-24 2009-05-13 吉尔科有限公司 Power LED package
US8263437B2 (en) * 2008-09-05 2012-09-11 STATS ChiPAC, Ltd. Semiconductor device and method of forming an IPD over a high-resistivity encapsulant separated from other IPDS and baseband circuit
CN103413802A (en) * 2013-06-26 2013-11-27 力成科技（苏州）有限公司 High power consumption chip packaging structure
CN203774281U (en) * 2014-01-24 2014-08-13 嘉兴斯达微电子有限公司 Intelligent power module integrally injection-moulded and packaged
CN106024652A (en) * 2016-07-29 2016-10-12 广东美的制冷设备有限公司 Intelligent power module and manufacturing method thereof
CN106098650A (en) * 2016-07-29 2016-11-09 广东美的制冷设备有限公司 A kind of SPM and manufacture method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000007238A1 (en) * 1998-07-31 2000-02-10 Ixys Corporation Electrically isolated power semiconductor package
CN101432872A (en) * 2004-09-24 2009-05-13 吉尔科有限公司 Power LED package
US8263437B2 (en) * 2008-09-05 2012-09-11 STATS ChiPAC, Ltd. Semiconductor device and method of forming an IPD over a high-resistivity encapsulant separated from other IPDS and baseband circuit
CN103413802A (en) * 2013-06-26 2013-11-27 力成科技（苏州）有限公司 High power consumption chip packaging structure
CN203774281U (en) * 2014-01-24 2014-08-13 嘉兴斯达微电子有限公司 Intelligent power module integrally injection-moulded and packaged
CN106024652A (en) * 2016-07-29 2016-10-12 广东美的制冷设备有限公司 Intelligent power module and manufacturing method thereof
CN106098650A (en) * 2016-07-29 2016-11-09 广东美的制冷设备有限公司 A kind of SPM and manufacture method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114340175A (en) * 2022-01-10 2022-04-12 鹤山市泰利诺电子有限公司 Circuit board routing method
CN114666975A (en) * 2022-03-15 2022-06-24 广东汇芯半导体有限公司 Semiconductor circuit structure and manufacturing method thereof

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