JP2009164240A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP2009164240A
JP2009164240A JP2007340248A JP2007340248A JP2009164240A JP 2009164240 A JP2009164240 A JP 2009164240A JP 2007340248 A JP2007340248 A JP 2007340248A JP 2007340248 A JP2007340248 A JP 2007340248A JP 2009164240 A JP2009164240 A JP 2009164240A
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semiconductor device
main surface
connection conductor
lead terminal
semiconductor element
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Toshishi Yokoe
稔志 横江
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Panasonic Corp
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Panasonic Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can be prevented from being a defective product due to bubbles or unfilling of resin in a sealing portion in assembling. <P>SOLUTION: In the semiconductor device, a through-hole h piercing from a first main surface to a second main surface is formed on a metal piece connected to an element region and a second lead 2. With this configuration, a resin injected for resin seal in assembly can easily flow from the first main surface to the second main surface of a metal piece and vice versa to improve filling performance, and bubbles and unfilling of resin easily generated in the lower part of a metal piece can be prevented. In addition, the semiconductor device having low resistance caused by wide width of the metal piece, high heat dissipation and low profile can be obtained. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体装置に係り、特に大電流に適した小型・薄型の半導体装置の内部構造に関するものである。   The present invention relates to a semiconductor device, and more particularly to an internal structure of a small and thin semiconductor device suitable for a large current.

近年、電子装置の小型化、薄型化、軽量化への要求に応えて、電子装置に組み込まれる半導体装置においては高密度実装がなされており、小型化、薄型化、軽量化および低価格化への要求が強くなっている。中でも半導体素子とリードフレームとの接続においては、限られた領域の中でより薄くかつ低抵抗で信頼性の高い接続が求められている。   In recent years, in response to demands for miniaturization, thinning, and weight reduction of electronic devices, high-density mounting has been implemented in semiconductor devices incorporated in electronic devices, leading to miniaturization, thinning, weight reduction, and price reduction. The demand for is getting stronger. In particular, the connection between the semiconductor element and the lead frame is required to be thinner, lower resistance, and higher reliability in a limited region.

従来、パワーＭＯＳＦＥＴのような大電流用の半導体素子とリードとの接続に際しては、クリップと呼ばれる、あらかじめカットされた金属片を用いることで、直接同時に超音波接合で接合する方法が提案されている。
その一例として特許文献１では、図７に示すように、第１リード端子１０１および、第２リード端子１０２を備えたリードフレームに、半導体素子１０３を搭載するとともに、その素子電極１０４と第２リード端子１０２とを、金属片１０６で接続し、封止樹脂１０７で封止したものが提案されている。 Conventionally, when connecting a semiconductor element for large current such as a power MOSFET and a lead, a method of joining by ultrasonic joining directly and simultaneously by using a pre-cut metal piece called a clip has been proposed. .
As an example, in Patent Document 1, as shown in FIG. 7, a semiconductor element 103 is mounted on a lead frame including a first lead terminal 101 and a second lead terminal 102, and the element electrode 104 and the second lead are mounted. A device in which the terminal 102 is connected with a metal piece 106 and sealed with a sealing resin 107 has been proposed.

この構造では、素子電極部１０４と第２リード端子１０２との間を、該第２リード端子１０２と素子電極１０４とに各々はんだ接続（図示せず）にて電気的に接続されていた。この構成によって、金属片１０６をその一方端部を素子電極部１０４上に、その他方端部を第２リード端子１０２上に位置させて載置して接続することが可能となるため、半導体素子１０３に対して押圧力を付加する必要なく上記接続が可能となり、第１リード端子１０１上における半導体素子１０３の位置ずれを発生させたり、電極部１０５を傷つけたりすることなく、容易に上記接続をなし得ることができるとされている。
特開平８−１４８６２３号公報 In this structure, the element electrode portion 104 and the second lead terminal 102 are electrically connected to the second lead terminal 102 and the element electrode 104 by solder connection (not shown). With this configuration, the metal piece 106 can be placed and connected with its one end positioned on the element electrode portion 104 and the other end positioned on the second lead terminal 102. The above connection is possible without applying a pressing force to the 103, and the connection can be easily made without causing the positional deviation of the semiconductor element 103 on the first lead terminal 101 or damaging the electrode portion 105. It is said that you can get none.
JP-A-8-148623

しかしながら、上記構成では、樹脂封止の際に金属片１０６が接合されている事で金属片１０６の上下部の封止樹脂の流動性が低下する。そしてさらに、金属片１０６の下部を広くする為クランク状等にフォーミングを施せばパッケージを構成する封止樹脂１０７の第１表面と金属片１０６間が狭くなり、封止樹脂１０７の第１表面と金属片間を広くすると金属片１０６下部が狭くなり、気泡・未充填が発生することがある。このため、半導体素子１０３の電気特性に影響を与えたり、リークやショートなど、半導体装置としての電気特性が損なわれることがある。また、高電流印加時に発生する熱により金属片１０６の上下部に発生した気泡が膨張することで、封止樹脂１０７にクラックが発生することがある。   However, in the above configuration, the fluidity of the sealing resin at the upper and lower portions of the metal piece 106 is lowered by joining the metal piece 106 during resin sealing. Further, if forming is performed in a crank shape or the like in order to widen the lower part of the metal piece 106, the space between the first surface of the sealing resin 107 and the metal piece 106 constituting the package becomes narrower, and the first surface of the sealing resin 107 If the space between the metal pieces is widened, the lower part of the metal piece 106 becomes narrow, and bubbles and unfilled may occur. For this reason, the electrical characteristics of the semiconductor element 103 may be affected, or the electrical characteristics of the semiconductor device, such as leakage or short circuit, may be impaired. In addition, cracks may occur in the sealing resin 107 due to expansion of bubbles generated in the upper and lower portions of the metal piece 106 due to heat generated when a high current is applied.

本発明は、前記実情に鑑みてなされたもので、組立の際に封止樹脂の流動性が低下したり、気泡の発生や未充填領域の発生によって不具合が生じるのを防止し、信頼性の高い半導体装置を提供することを目的とする。   The present invention has been made in view of the above circumstances, and prevents the fluidity of the sealing resin from being lowered during assembly, or prevents the occurrence of defects due to the generation of bubbles or unfilled regions, and is reliable. It is an object to provide a high semiconductor device.

そこで本発明では、相対向する第１および第２主面を有し、前記第１主面に素子電極を有する半導体素子と、前記半導体素子の第２主面が当接するように前記半導体素子を搭載する半導体素子搭載部と、前記半導体素子搭載部から所定の間隔を隔てて配設されたリード端子と、前記素子電極と前記リード端子とを電気的に接続する接続導体と、前記半導体素子、前記接続導体および前記リード端子の一部を覆うとともに、前記リード端子の一部を外部に露出する封止樹脂とからなり、前記接続導体が、第１主面から第２主面にかけて貫通する少なくとも１つの開口部を有することを特徴とする。
この構成により、接続導体の第１主面から第２主面にかけて貫通する少なくとも１つの開口部を有することで封止樹脂の流動性を損なうことなく、充填することができるため、気泡や未充填部の発生を防ぐことができる。 Therefore, in the present invention, the semiconductor element having the first and second main surfaces opposed to each other and having the element electrode on the first main surface and the second main surface of the semiconductor element are in contact with each other. A semiconductor element mounting portion to be mounted, a lead terminal disposed at a predetermined interval from the semiconductor element mounting portion, a connection conductor for electrically connecting the element electrode and the lead terminal, the semiconductor element, The connecting conductor and the lead terminal are covered with a sealing resin that exposes a part of the lead terminal to the outside, and the connecting conductor penetrates from the first main surface to the second main surface. It is characterized by having one opening.
With this configuration, since it can be filled without impairing the fluidity of the sealing resin by having at least one opening penetrating from the first main surface to the second main surface of the connection conductor, bubbles or unfilled Generation of parts can be prevented.

また、本発明は、上記半導体装置において、前記接続導体の第１主面から第２主面にかけて貫通する開口部が前記第１および第２主面に交わる端面に到達する形状であるものを含む。
この構成により、幅広の接続導体を用いた場合にも接続導体端面の開口部周縁に沿って効率よく樹脂が充填されるため、気泡や未充填部の発生をより効率よく抑制することが可能となる。 The present invention includes the above semiconductor device, wherein the connection conductor has a shape in which an opening penetrating from the first main surface to the second main surface reaches an end surface intersecting the first and second main surfaces. .
With this configuration, even when a wide connection conductor is used, the resin is efficiently filled along the peripheral edge of the opening on the end surface of the connection conductor, so that generation of bubbles and unfilled portions can be more efficiently suppressed. Become.

また、本発明は、上記半導体装置において、前記接続導体が、金属片であるものを含む。
この構成により、打ち抜き加工により容易に開口部を形成することができ、加工性が良好で、信頼性の高い接続が可能となる。また、この貫通穴の部分で曲げが生じ易くなり、形状加工が容易となる。 The present invention includes the above semiconductor device, wherein the connection conductor is a metal piece.
With this configuration, the opening can be easily formed by punching, and the workability is good and a highly reliable connection is possible. Further, bending easily occurs at the through hole portion, and the shape processing becomes easy.

また、本発明は、上記半導体装置において、前記接続導体が、メッシュ状体であるものを含む。
この構成により、加工性が良好となる。 The present invention includes the above semiconductor device, wherein the connection conductor is a mesh-like body.
With this configuration, workability is improved.

また、本発明は、上記半導体装置において、前記接続導体が、絶縁層と金属箔との積層体であるものを含む。
この構成により、前記素子電極と前記リード端子との接続領域を除く少なくとも前記半導体素子側の面が、絶縁被覆された帯状体を構成することになるため、変形による断線、短絡の課題を解決する事ができる。また、平型であることと、半導体素子側の面が絶縁被覆されていることから、金属細線を用いて接続する場合に必要となっていた高さよりも大幅に低背化することができ、半導体装置の小型化、薄型化が可能となる。 The present invention includes the above semiconductor device, wherein the connection conductor is a laminate of an insulating layer and a metal foil.
With this configuration, since at least the surface on the semiconductor element side excluding the connection region between the element electrode and the lead terminal constitutes a band-shaped body with insulation coating, the problem of disconnection and short circuit due to deformation is solved. I can do things. Moreover, since it is a flat type and the surface on the semiconductor element side is covered with insulation, it can be significantly reduced in height from the height required when connecting using a thin metal wire, The semiconductor device can be reduced in size and thickness.

以下のように、本発明の半導体装置によれば、組立の際に封止樹脂の流動性低下による不具合の発生を防止し、高信頼性で且つ、効率良く製造が可能な半導体装置を提供することができる。また、封止樹脂の充填性が良くなる為、金属片の幅広化を実現することができる。従って、金属片の幅広化に伴う低抵抗・高放熱及び低背化をはかることが可能となる。   As described below, according to the semiconductor device of the present invention, there is provided a semiconductor device that can be manufactured with high reliability and efficiency by preventing the occurrence of problems due to a decrease in fluidity of the sealing resin during assembly. be able to. Moreover, since the filling property of the sealing resin is improved, the metal piece can be widened. Therefore, it is possible to achieve low resistance, high heat dissipation and low profile due to the widening of the metal piece.

以下本発明の実施の形態について、図面を参照しながら詳細に説明する。
（実施の形態１）
本発明の実施の形態の樹脂封止型半導体装置を図１および図２に示す。図１は、本発明の樹脂封止型半導体装置における実施の形態の上面図、図２は断面図である。図１において、１は第１リード端子、２は第２リード端子、３は半導体素子、４は素子電極、５はんだ（材）、Ｃは接続導体としての金属片、６ａは金属片の第１先端部、６ｂは金属片の第２先端部、７は封止樹脂を各々示している。
この樹脂封止型半導体装置は、相対向する第１および第２主面を有し、第１主面に素子電極４を有する半導体素子３と、前記半導体素子３の第２主面が当接するように前記半導体素子を搭載する半導体素子搭載部としてのダイパッドを構成する第１リード端子１と、このダイパッドから所定の間隔を隔てて配設された第２リード端子２と、素子電極４と第２リード端子２とを電気的に接続する接続導体Ｃと、半導体素子３、接続導体Ｃおよび第１および第２リード端子１，２の一部を覆うとともに、第１および第２リード端子１，２の一部を外部に露出する封止樹脂７とからなり、前記接続導体Ｃが、第１主面から第２主面にかけて貫通する開口部ｈを有することを特徴とする。またこの接続導体Ｃは、半導体素子の端部に接触しないようアーチ状をなし、クランク状に段差を設けてフォーミングされている。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
1 and 2 show a resin-encapsulated semiconductor device according to an embodiment of the present invention. FIG. 1 is a top view of an embodiment of the resin-encapsulated semiconductor device of the present invention, and FIG. 2 is a cross-sectional view. In FIG. 1, 1 is a first lead terminal, 2 is a second lead terminal, 3 is a semiconductor element, 4 is an element electrode, 5 solder (material), C is a metal piece as a connecting conductor, and 6a is a first metal piece. The tip portion, 6b is the second tip portion of the metal piece, and 7 is the sealing resin.
This resin-encapsulated semiconductor device has first and second main surfaces facing each other, and the semiconductor element 3 having the element electrode 4 on the first main surface and the second main surface of the semiconductor element 3 abut on each other. Thus, the first lead terminal 1 constituting the die pad as the semiconductor element mounting portion for mounting the semiconductor element, the second lead terminal 2 disposed at a predetermined distance from the die pad, the element electrode 4 and the first electrode The connection conductor C that electrically connects the two lead terminals 2, the semiconductor element 3, the connection conductor C, and a part of the first and second lead terminals 1 and 2, and the first and second lead terminals 1 and 2 The connection conductor C has an opening h penetrating from the first main surface to the second main surface. Further, the connection conductor C is formed in an arch shape so as not to come into contact with the end portion of the semiconductor element, and is formed with a step in a crank shape.

すなわち、素子電極４とリード端子２の先端部とを電気的に接続する接続導体Ｃを構成する導電性の帯状体は、たとえば、超音波接合を可能にするために銅やアルミニウムあるいはその表面にめっきの施された金属片６から形成されているが、ここで金属片としては、貫通穴ｈを配設することで、封止樹脂の流動性を妨げないようにすることができる。従って空洞もなく信頼性の高い樹脂封止部７を形成することができる。またこの金属片は、特に柔軟性を有するものでなくてもよいが、貫通穴ｈを配設することで折り曲げ易くなる。例えば、導電性の帯状体として銅または銅合金を用いた場合、幅は５０μｍから３ｍｍ程度、厚さは２０μｍから０．５ｍｍ程度である。   That is, the conductive band-shaped body constituting the connection conductor C that electrically connects the element electrode 4 and the tip of the lead terminal 2 is formed on, for example, copper or aluminum or its surface in order to enable ultrasonic bonding. Although formed from the metal piece 6 which has been plated, the fluidity of the sealing resin can be prevented by disposing the through hole h as the metal piece. Therefore, it is possible to form the resin sealing portion 7 having no cavity and high reliability. Further, this metal piece may not be particularly flexible, but can be easily bent by providing the through hole h. For example, when copper or a copper alloy is used as the conductive strip, the width is about 50 μm to 3 mm, and the thickness is about 20 μm to 0.5 mm.

半導体素子３は、たとえば、シリコン基板上にダイオードなどの電子回路を構成する素子領域が形成されて構成されており、半導体素子３とダイパッド（第１リード端子１）の第一主面とは、はんだ材、熱硬化性樹脂、導電性接着剤等、導電性材料５を用いて接合されている。ダイパッドは、たとえば、金属材料により形成されており、その一部に半導体装置の外部へと成形された第１リード端子１を構成している。   The semiconductor element 3 is configured, for example, by forming an element region constituting an electronic circuit such as a diode on a silicon substrate. The semiconductor element 3 and the first main surface of the die pad (first lead terminal 1) are: Bonding is performed using a conductive material 5 such as a solder material, a thermosetting resin, or a conductive adhesive. The die pad is made of, for example, a metal material, and constitutes a first lead terminal 1 formed partly outside the semiconductor device.

第２リード端子２は、たとえば、前記第１リード端子を構成する金属材料と同一材料で一体的に形成されており、先端部２ｂは半導体装置の外部に露出する形で、第１リード端子の先端部１ｂと相対する位置に設置されている。   For example, the second lead terminal 2 is integrally formed of the same metal material as the first lead terminal, and the tip 2b is exposed to the outside of the semiconductor device. It is installed at a position facing the tip 1b.

封止樹脂７は、第１および第２リード端子１，２をその相対向する辺側に導出する形で形成されており、たとえば、エポキシ樹脂等の封止樹脂により形成されている。   The sealing resin 7 is formed in such a manner that the first and second lead terminals 1 and 2 are led out to opposite sides, and is formed of a sealing resin such as an epoxy resin, for example.

次にこの半導体装置の実装工程について説明する。
この方法では、半導体素子搭載部と、前記半導体素子搭載部に近接して設けられたリード端子とを有するリードフレームを用意する工程と、前記半導体素子搭載部に半導体素子を接着する素子接着工程と、前記半導体素子の主面に形成された素子電極または前記リード端子の一方に、ロール状のスプールから供給される導電性の帯状体からなる接続導体を接合する第１の工程と、前記帯状体を前記素子電極または前記リード端子の他方に接合する第２の工程とを含む接合工程と、前記帯状体を切断する切断工程と、前記帯状体と、前記半導体素子および前記リード端子の一部を覆うように封止用樹脂で覆う樹脂封止工程とを含む。 Next, the mounting process of this semiconductor device will be described.
In this method, a step of preparing a lead frame having a semiconductor element mounting portion and a lead terminal provided in proximity to the semiconductor element mounting portion; and an element bonding step of bonding the semiconductor element to the semiconductor element mounting portion; A first step of joining a connection conductor made of a conductive band supplied from a roll-shaped spool to one of the element electrode formed on the main surface of the semiconductor element or the lead terminal; and the band A bonding step including a second step of bonding the element electrode or the other of the lead terminals, a cutting step of cutting the band-shaped body, the band-shaped body, the semiconductor element, and a part of the lead terminal. A resin sealing step of covering with a sealing resin so as to cover.

まず、第１リード端子１に対向させて形成された第２リード端子２とを、枠体（図示せず）で連結するように打ち抜き加工などで成形するとともに、両リード端子の第１主面が上段となるようクランク状に段差を設けてフォーミングし、リードフレームを形成する。なお、リードフレーム表面にはＮｉめっきを施してもよい。そして、前記第１リード端子１の上段第１主面に半導体素子３をはんだ材（導電性接着剤５）を用いて接続する。   First, the second lead terminal 2 formed facing the first lead terminal 1 is formed by stamping or the like so as to be connected by a frame (not shown), and the first main surface of both lead terminals. A lead frame is formed by forming a step in the form of a crank so that is at the top. The lead frame surface may be plated with Ni. Then, the semiconductor element 3 is connected to the upper first main surface of the first lead terminal 1 using a solder material (conductive adhesive 5).

ここで、半導体素子３の第１主面には素子電極４を有しており、該素子電極４とスプール８から繰り出された接続導体として、所定位置に貫通穴(ここでは図示せず)を形成した帯状体（未切断の金属片６）の第１先端部６ａを超音波接合用ツール１０によって第１に直接超音波接合させる（図３（ａ））。   Here, the first principal surface of the semiconductor element 3 has an element electrode 4, and a through-hole (not shown here) is formed at a predetermined position as a connection conductor drawn out from the element electrode 4 and the spool 8. The first tip portion 6a of the formed band-shaped body (uncut metal piece 6) is first directly ultrasonically bonded by the ultrasonic bonding tool 10 (FIG. 3A).

その後超音波接合用ツールが半導体素子の端部に接触しないようアーチ状にクランク状に段差を設けてフォーミングされた第２リード端子２上に移動しアーチ形状部６ｃを形成する。
そして前記電極部４と前記第２リード端子２を電気的に導通されるよう第２リード端子２の第１主表面に超音波接合ツール１０が移動しアーチ形状部の形成された端部を第２に直接超音波接合する（図３（ｂ））。このようにして接続された箇所のアーチ形状部６ｃと反対側の前記帯状体の第２先端部を切断し金属片６からなる接続導体Ｃを形成する。 Thereafter, the ultrasonic bonding tool moves on the second lead terminal 2 formed with a step in a crank shape in an arch shape so as not to contact the end portion of the semiconductor element to form an arch shape portion 6c.
Then, the ultrasonic bonding tool 10 moves to the first main surface of the second lead terminal 2 so that the electrode portion 4 and the second lead terminal 2 are electrically connected, and the end portion where the arch-shaped portion is formed is the first end surface. 2 is directly ultrasonically bonded (FIG. 3B). The connection conductor C made of the metal piece 6 is formed by cutting the second tip end portion of the band-like body on the side opposite to the arch-shaped portion 6 c connected in this way.

これらの接合には導電性ペースト等を介しての接続を行わず、第１、第２と直接超音波接合を行う為、半導体素子の接続位置のバラツキやサイズ変更に伴っての金属の厚み、幅、長さの変更が可能となっており接続不良の防止、または製品の低抵抗化の設計が実現可能である。   In order to perform ultrasonic bonding directly with the first and second without performing connection via a conductive paste or the like for these bonding, the thickness of the metal due to variation in the connection position of the semiconductor element and the size change, The width and length can be changed, so that it is possible to prevent connection failure or to design a product with low resistance.

ここで、該導電性の帯状体は幅050μm〜3mmで厚みが20μm〜0.5mmで、柔軟性のある金属、例えばアルミニウムまたはアルミニウム合金であるためスプールに巻かれた状態になっており、それが回転することで導電性の帯状体の供給を行い、接合後、切断して金属片６を形成する。このアーチ形成等の形状変更が容易に可能となる。このようにして、封止用樹脂注入時に金属片６の上下に気泡・未充填が発生しないようアーチ形状部６ｃを形成しておく。   Here, the conductive strip is 050 μm to 3 mm in width and 20 μm to 0.5 mm in thickness, and is a flexible metal, for example, aluminum or an aluminum alloy, so that it is wound around a spool. By rotating, a conductive strip is supplied, and after joining, the metal piece 6 is formed by cutting. It is possible to easily change the shape such as arch formation. In this way, the arch-shaped portion 6c is formed so that bubbles and unfilled portions do not occur above and below the metal piece 6 when the sealing resin is injected.

そして封止金型に前記リードフレーム、前記半導体素子３、前記金属片６を包含し、前記第１リード端子と前記第２リード端子との一部または全てを含んだキャビティーを形成して該キャビティー内に封止用樹脂、例えばエポキシ等の樹脂を注入して加熱硬化させて封止樹脂７が形成される。このとき、接続導体Ｃに形成された貫通穴ｈの存在により、効率よく樹脂が流れて充填されるため、気泡の発生もなく高品質の封止部７が形成される。   The sealing mold includes the lead frame, the semiconductor element 3, and the metal piece 6, and a cavity including a part or all of the first lead terminal and the second lead terminal is formed. A sealing resin, such as an epoxy resin, is injected into the cavity and cured by heating to form the sealing resin 7. At this time, since the resin flows and fills efficiently due to the presence of the through hole h formed in the connection conductor C, a high-quality sealing portion 7 is formed without generation of bubbles.

前記封止部から引き出された前記リードフレームの一部である前記第１リード端子と前記第２リード端子とのリード端子先端予定部を各々切断して外部引き出し端子としての該第１リード端子と該第２リード端子とする。   The first lead terminal as an external lead terminal by cutting each lead terminal leading end portion of the first lead terminal and the second lead terminal that are part of the lead frame drawn out from the sealing portion; The second lead terminal is used.

この方法によれば、接続導体Ｃに形成された貫通穴ｈの存在により、効率よく樹脂が流れて充填されるため、気泡の発生もなく高品質の封止部７が形成される。また、接続導体である導電性の帯状体をロール状のスプールから供給しながら、一端を素子電極に接合し、次いで位置あわせをして他端をリード端子に接合し、切断して金属片６を形成するようにしているため、接続導体をあらかじめフォーミングすることなく、位置あわせをしながら接合することができ、位置ずれに伴うリークやショートなどを低減することができるため、信頼性が向上する。また、長さを調整しながら実装することができるため、材料に無駄がなく、低コスト化をはかることができる。   According to this method, since the resin efficiently flows and fills due to the presence of the through hole h formed in the connection conductor C, the high-quality sealing portion 7 is formed without generation of bubbles. In addition, while supplying a conductive strip as a connection conductor from a roll-shaped spool, one end is joined to the element electrode, then aligned, the other end is joined to the lead terminal, and the metal piece 6 is cut. Therefore, without forming the connecting conductor in advance, it can be joined while aligning, and leakage and short-circuit due to misalignment can be reduced, thus improving reliability. . Moreover, since it can be mounted while adjusting the length, the material is not wasted, and the cost can be reduced.

なお前記実施の形態では、接続導体を帯状体（帯状の銅）に貫通穴を形成したが、その形状についてはこれに限定されるものではなく、図４（ａ）乃至（ｃ）に変形例を示すように、複数の穴ｈを配列したもの、両サイドに切り欠きｈ１を形成したもの、メッシュで構成したものなども適用可能である。
また、前記接続導体は、スプロールに巻回したものを用いたが、所定長さに切断したものを用いてもよいことは言うまでもない。また、厚さや材質を考慮して材料自体に可撓性をもたせ、単体材料で構成してもよい。この構成により、薄型化が可能となり取り扱いが容易となる。 In the above embodiment, the through hole is formed in the band-shaped body (band-shaped copper) as the connection conductor. However, the shape of the connection conductor is not limited to this, and the modified examples shown in FIGS. As shown, a plurality of holes h arranged, a notch h1 formed on both sides, a mesh structure, and the like are also applicable.
Moreover, although the said connection conductor used what was wound around the sprawl, it cannot be overemphasized that what was cut | disconnected by predetermined length may be used. Further, considering the thickness and material, the material itself may be made flexible and may be composed of a single material. With this configuration, the thickness can be reduced and the handling becomes easy.

（実施の形態２）
前記実施の形態１では、接続導体は単層構造で構成したが、絶縁層と金属箔との積層体で接続導体を構成してもよい。
本実施の形態においても、基本的には前記実施の形態と同様であるが、この半導体装置は図５に示すように、前記接続導体Ｃが、絶縁層１６と金属箔１５との積層体で構成され、この積層体を貫通する貫通穴ｈを有しており、絶縁層が前記半導体素子表面の一部に当接するように、前記半導体素子に沿うように成形された点で前記実施の形態と異なる。他は同様に形成されている。
この構成により、貫通穴の存在により、より効率よく封止樹脂の充填を行うことができ、高品質の樹脂封止を実現することが可能となる。また接続導体と半導体素子、リード端子との短絡を招くことなく、信頼性の高い接続が可能となり、更なる低背化が可能となる。 (Embodiment 2)
In the first embodiment, the connection conductor has a single-layer structure, but the connection conductor may be formed of a laminate of an insulating layer and a metal foil.
In this embodiment, the semiconductor device is basically the same as that in the above embodiment, but in this semiconductor device, as shown in FIG. 5, the connection conductor C is a laminated body of an insulating layer 16 and a metal foil 15. The embodiment is configured in that it has a through hole h penetrating the laminated body, and is formed so as to be along the semiconductor element so that the insulating layer is in contact with a part of the surface of the semiconductor element. And different. Others are similarly formed.
With this configuration, the presence of the through hole enables the sealing resin to be more efficiently filled, and high-quality resin sealing can be realized. In addition, a highly reliable connection is possible without causing a short circuit between the connection conductor, the semiconductor element, and the lead terminal, and a further reduction in height is possible.

すなわち、素子電極とリード端子のリード第１先端部とを電気的に接続する接続導体Ｃを構成する接続導体Ｃは、たとえば、銅箔１５とこの銅箔の表面を覆う絶縁層１６としてのポリイミド樹脂から形成されている。ここで銅箔１５および絶縁層１６には柔軟性を有するものを用いる。   That is, the connection conductor C that constitutes the connection conductor C that electrically connects the element electrode and the lead first tip portion of the lead terminal is, for example, a polyimide as the copper foil 15 and the insulating layer 16 that covers the surface of the copper foil. It is formed from resin. Here, the copper foil 15 and the insulating layer 16 are flexible.

次にこの半導体装置の実装方法について説明する。
この構成についても図３（ａ）乃至（ｄ）に示した前記実施の形態と同様であるが、本実施の形態では、図６（ａ）乃至（ｄ）に示すように、接続導体は中間部でアーチを形成することなく、半導体素子表面に沿うように成形される。なお接続導体６（Ｃ）は銅箔と絶縁層との積層体であるが、図中省略している。 Next, a method for mounting the semiconductor device will be described.
This configuration is the same as that of the above-described embodiment shown in FIGS. 3A to 3D, but in this embodiment, the connection conductor is an intermediate as shown in FIGS. 6A to 6D. The part is molded along the surface of the semiconductor element without forming an arch at the part. Note that the connection conductor 6 (C) is a laminated body of a copper foil and an insulating layer, but is omitted in the drawing.

この構成によれば、接続が容易でかつ信頼性の高い半導体装置を提供することが可能となる。
また本発明は、接続導体は、絶縁層が前記半導体素子表面の一部に当接するように、前記半導体素子に沿うように成形されているため、短絡を招くことなく、更なる低背化が可能となる。 According to this configuration, it is possible to provide a highly reliable semiconductor device that can be easily connected.
Further, according to the present invention, since the connection conductor is formed along the semiconductor element so that the insulating layer contacts a part of the surface of the semiconductor element, the connection conductor can be further reduced in height without causing a short circuit. It becomes possible.

以上説明してきたように、本発明の半導体装置は、面実装タイプの半導体パッケージとして有用であり、特に内部配線に大電流を印加する大電流デバイス用への適用が可能である。   As described above, the semiconductor device of the present invention is useful as a surface-mounting type semiconductor package, and can be applied particularly to a high-current device that applies a large current to internal wiring.

本発明の実施の形態１における半導体装置の上面図The top view of the semiconductor device in Embodiment 1 of this invention 本発明の実施の形態１における半導体装置の断面図Sectional drawing of the semiconductor device in Embodiment 1 of this invention 本発明の実施の形態１における半導体装置の製造工程図Manufacturing process diagram of the semiconductor device in the first embodiment of the present invention 本発明の実施の形態１における接続導体の変形例を示す図The figure which shows the modification of the connection conductor in Embodiment 1 of this invention 本発明の実施の形態２における半導体装置の断面図Sectional drawing of the semiconductor device in Embodiment 2 of this invention 本発明の実施の形態２における半導体装置の製造工程図Manufacturing process diagram of the semiconductor device in the second embodiment of the present invention 従来例の半導体装置の断面図Sectional view of a conventional semiconductor device

符号の説明Explanation of symbols

１ 第１リード端子
２ 第２リード端子
３ 半導体素子
４ 電極部
５ はんだ
６ 金属片
６ａ 第１先端部
６ｂ 第２先端部
６ｃ アーチ形状部
６ｄ 切断部
７ 封止樹脂部
８ スプール
１０ 超音波接続用ツール
ｈ 貫通穴 DESCRIPTION OF SYMBOLS 1 1st lead terminal 2 2nd lead terminal 3 Semiconductor element 4 Electrode part 5 Solder 6 Metal piece 6a 1st front-end | tip part 6b 2nd front-end | tip part 6c Arch shape part 6d Cutting part 7 Sealing resin part 8 Spool 10 For ultrasonic connection Tool h Through hole

Claims (5)

相対向する第１および第２主面を有し、前記第１主面に素子電極を有する半導体素子と、前記半導体素子の第２主面が当接するように前記半導体素子を搭載する半導体素子搭載部と、前記半導体素子搭載部から所定の間隔を隔てて配設されたリード端子と、前記素子電極と前記リード端子とを電気的に接続する接続導体と、前記半導体素子、前記接続導体および前記リード端子の一部を覆うとともに、前記リード端子の一部を外部に露出する封止樹脂とからなり、
前記接続導体が、第１主面から第２主面にかけて貫通する少なくとも１つの開口部を有する半導体装置。 Semiconductor element mounting having a semiconductor element having first and second main surfaces facing each other and having a device electrode on the first main surface, and the semiconductor element mounted so that the second main surface of the semiconductor element abuts A lead terminal disposed at a predetermined interval from the semiconductor element mounting portion, a connection conductor for electrically connecting the element electrode and the lead terminal, the semiconductor element, the connection conductor, and the It consists of a sealing resin that covers a part of the lead terminal and exposes a part of the lead terminal to the outside,
A semiconductor device in which the connection conductor has at least one opening penetrating from the first main surface to the second main surface. 請求項１に記載の半導体装置であって、
前記接続導体の第１主面から第２主面にかけて貫通する開口部が前記第１および第２主面に交わる端面に到達する形状である半導体装置。 The semiconductor device according to claim 1,
A semiconductor device having a shape in which an opening penetrating from a first main surface to a second main surface of the connection conductor reaches an end surface intersecting the first and second main surfaces. 請求項１または２に記載の半導体装置であって、
前記接続導体は、金属片である半導体装置。 The semiconductor device according to claim 1, wherein
The connection conductor is a semiconductor device which is a metal piece. 請求項１または２に記載の半導体装置であって、
前記接続導体は、メッシュ状体である半導体装置。 The semiconductor device according to claim 1, wherein
The connection conductor is a semiconductor device which is a mesh-like body. 請求項１または２に記載の半導体装置であって、
前記接続導体は、絶縁層と金属箔との積層体である半導体装置。 The semiconductor device according to claim 1, wherein
The connection conductor is a semiconductor device which is a laminated body of an insulating layer and a metal foil.
JP2007340248A 2007-12-28 2007-12-28 Semiconductor device Withdrawn JP2009164240A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013149802A (en) * 2012-01-19 2013-08-01 Shindengen Electric Mfg Co Ltd Method of manufacturing semiconductor device, semiconductor device, and connector
WO2014132897A1 (en) * 2013-03-01 2014-09-04 住友電気工業株式会社 Semiconductor device
JP2015046416A (en) * 2013-08-27 2015-03-12 三菱電機株式会社 Semiconductor device, and method of manufacturing the same
WO2015174334A1 (en) * 2014-05-13 2015-11-19 カルソニックカンセイ株式会社 Beam lead, semiconductor device and method for manufacturing semiconductor device
WO2016193038A1 (en) * 2015-06-01 2016-12-08 Siemens Aktiengesellschaft Method for electrically contacting a component by means of galvanic connection of an open-pored contact piece, and corresponding component module

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013149802A (en) * 2012-01-19 2013-08-01 Shindengen Electric Mfg Co Ltd Method of manufacturing semiconductor device, semiconductor device, and connector
WO2014132897A1 (en) * 2013-03-01 2014-09-04 住友電気工業株式会社 Semiconductor device
JP2014170800A (en) * 2013-03-01 2014-09-18 Sumitomo Electric Ind Ltd Semiconductor device
JP2015046416A (en) * 2013-08-27 2015-03-12 三菱電機株式会社 Semiconductor device, and method of manufacturing the same
WO2015174334A1 (en) * 2014-05-13 2015-11-19 カルソニックカンセイ株式会社 Beam lead, semiconductor device and method for manufacturing semiconductor device
WO2016193038A1 (en) * 2015-06-01 2016-12-08 Siemens Aktiengesellschaft Method for electrically contacting a component by means of galvanic connection of an open-pored contact piece, and corresponding component module
CN107660308A (en) * 2015-06-01 2018-02-02 西门子公司 Make the method for component electrical contact and corresponding assembly module for being connected by means of the plating formula of opening contacts part
US11037862B2 (en) 2015-06-01 2021-06-15 Siemens Aktiengesellschaft Method for electrically contacting a component by galvanic connection of an open-pored contact piece, and corresponding component module

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