CN106098650A - A kind of SPM and manufacture method thereof - Google Patents

A kind of SPM and manufacture method thereof Download PDF

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Publication number
CN106098650A
CN106098650A CN201610624916.3A CN201610624916A CN106098650A CN 106098650 A CN106098650 A CN 106098650A CN 201610624916 A CN201610624916 A CN 201610624916A CN 106098650 A CN106098650 A CN 106098650A
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China
Prior art keywords
spm
pin
component
circuit
wiring layer
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CN201610624916.3A
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Chinese (zh)
Inventor
冯宇翔
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Midea Group Co Ltd
GD Midea Air Conditioning Equipment Co Ltd
Original Assignee
Midea Group Co Ltd
Guangdong Midea Refrigeration Equipment Co Ltd
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Application filed by Midea Group Co Ltd, Guangdong Midea Refrigeration Equipment Co Ltd filed Critical Midea Group Co Ltd
Priority to CN201610624916.3A priority Critical patent/CN106098650A/en
Publication of CN106098650A publication Critical patent/CN106098650A/en
Priority to PCT/CN2016/113978 priority patent/WO2018018848A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A kind of SPM and manufacture method thereof, SPM includes: as carrier, have first surface and the substrate of the second surface relative with this first surface；It is arranged at the insulating barrier of the first surface of described substrate；It is formed at the circuit-wiring layer of described surface of insulating layer；Back-off is also welded in the component in upper surface precalculated position of described circuit-wiring layer；And it is coated on the surface of described insulating barrier, the sealant that described circuit-wiring layer and component are covered.Make component stroke electrically connect by upside-down mounting mode, it is no longer necessary to metal bonding line, provide cost savings；Fin and aluminium base are completely exposed outside resin, improve radiating effect to greatest extent；Even if invading in outside moisture, because the most there is not metal wire, it is difficult to constitute corrosion.

Description

A kind of SPM and manufacture method thereof
Technical field
The invention belongs to electronic device manufacturing process field, particularly relate to a kind of SPM and manufacture method thereof.
Background technology
SPM (Intelligent Power Module, IPM) is a kind of by power electronics and integrated circuit The power drive series products that technology combines.IPM integrates device for power switching and high-voltage driving circuit, and in kept Voltage, overcurrent and the failure detector circuit such as overheated.IPM mono-aspect receives the control signal of MCU, drives subsequent conditioning circuit work, On the other hand the state detection signal of system is sent back to MCU.Compared with traditional discrete scheme, IPM is with its high integration, highly reliable Property etc. advantage win increasing market, be particularly suitable for driving the converter of motor and various inverter, be that frequency conversion is adjusted Speed, metallurgical machinery, electric propulsion, servo-drive, a kind of desired power level electronic device of frequency-conversion domestic electric appliances.
SPM typically can be operated in severe operating mode, such as the off-premises station of convertible frequency air-conditioner, hot and humid shape Under state, high temperature can make SPM internal temperature raise, complete by described sealing resin for existing SPM The structure sealed, internal being very easy to of SPM produces heat localization, high humidity can make aqueous vapor pass through described sealing resin with Gap between pin enters the internal circuit of described SPM, the high temperature within described SPM make from Son, particularly chloride ion and bromide ion migrate under the effect of aqueous vapor, and metal wire is produced corrosion, and this corrosion often goes out Now metal wire and component or metal wire and the joint portion of described wiring, cause open circuit, to SPM structure Become fatal damages, time serious, can make SPM that explosion accident out of control occurs, be applied to environment structure infringement, cause weight Big economic loss.
It addition, SPM has the device of different capacity, for the device of different capacity, the material of metal wire is with thick The most different, add the difficulty of processing of SPM, buy different nation's line equipment and also add processing cost, Further, the combination of multiple nation Wiring technology makes the manufacture first-pass yield step-down of described SPM, produces yield and is difficult to improve.? The cost causing described SPM eventually remains high, and have impact on the popularization and application of SPM.
Summary of the invention
Present invention seek to address that the deficiencies in the prior art, it is provided that the SPM of a kind of high reliability and adapt to this kind The process flow of structure, as manufacture method, can reduce while having more good contact reliability ensureing SPM The cost of SPM.
The present invention is achieved in that a kind of SPM, including:
As carrier, there is first surface and the substrate of the second surface relative with this first surface；
It is arranged at the insulating barrier of the first surface of described substrate；
It is formed at the circuit-wiring layer of described surface of insulating layer；
Back-off is also welded in the component in upper surface precalculated position of described circuit-wiring layer；And
It is coated on the surface of described insulating barrier, the sealant described circuit-wiring layer and component covered.
Further, also include that pin, described circuit-wiring layer include by antermarginal pin pad, described pin and institute State pin pad connect and extend outside described wiring.
Further, described pin surface is coated with coating.
Further, described pin is at least located at one of them edge of described SPM.
Further, described sealant is also by including described substrate covers.
Further, described sealant is resin bed.
Above-mentioned SPM provides the benefit that: makes component stroke electrically connect by upside-down mounting mode, no longer needs Want metal bonding line, provide cost savings；Fin and aluminium base are completely exposed outside resin, improve heat radiation effect to greatest extent Really；Even if invading in outside moisture, because the most there is not metal wire, it is difficult to constitute corrosion.
Another object of the present invention is to provide the manufacture method of a kind of SPM, comprise the following steps:
Making the substrate as carrier, the first surface in described substrate covers insulating barrier；Wherein, described substrate also has There is the second surface relative with described first surface；
Circuit-wiring layer is laid in described surface of insulating layer；
In the surface-mounted component of described circuit-wiring layer, wherein, described component assembles in the way of back-off；
In the Surface coating sealant of described insulating barrier, described circuit-wiring layer and described component are covered.
The manufacture method of above-mentioned SPM provides the benefit that: total incapsulation technology injecting glue at utmost ensure that intelligence The compactness of power model, so that the reliability of SPM is improved；Eliminate metal wire bonding and scavenger Sequence, the reliability of further SPM, but also save equipment investment, improve production efficiency, reduce technique Management and control requirement, makes the manufacture difficulty of SPM decline to a great extent, and fine ratio of product is improved, and reduce further intelligence merit The cost of rate module.
Accompanying drawing explanation
The top view of the SPM that Fig. 1 (A) provides for the embodiment of the present invention；
Fig. 1 (B) is the profile in Fig. 1 (A) along X-X ' line；
Fig. 1 (C) is the top view after the SPM of the present invention removes sealant；
Fig. 1 (D) is the lower surface top view of the SPM of the present invention；
The manufacturing process flow diagram of the SPM that Fig. 2 provides for the embodiment of the present invention；
Fig. 3 (A), 3 (B) be respectively SPM of the present invention manufacture method in make vertical view and the side of wiring Depending on operation schematic diagram；
Fig. 4 (A) is the size indication figure of pin；
Fig. 4 (B) is the operation schematic diagram making pin；
Fig. 5 (A) and 5 (B) is respectively assembly circuit element, the side-looking of pin and overlooks operation schematic diagram；
Fig. 6 is the sealing process schematic diagram of the manufacture method of SPM；
Fig. 7 is the detection operation schematic diagram of the manufacture method of SPM；
Fig. 8 is the process flow chart of the manufacture method of SPM.
Detailed description of the invention
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer, below in conjunction with Drawings and Examples, are further elaborated to the present invention.Should be appreciated that specific embodiment described herein is only used To explain the present invention, it is not intended to limit the present invention.
As shown in Fig. 1 (A), Fig. 1 (B), Fig. 1 (C), Fig. 1 (D), SPM includes substrate 16, insulating barrier 17, electricity The circuit that road wiring layer (wiring) 18, component 14 are constituted, and it is arranged in the pin 11 at described wiring 18 edge, With seal this circuit and described component 14 and the sealant 12 of described insulating barrier 17 upper surface are completely covered.Wherein, Fig. 1 (A) being the upper surface top view of SPM 10 of the present invention, described fin 15 exposes from upper surface, and Fig. 1 (B) is edge The sectional view of the X-X ' line of Fig. 1 (A), Fig. 1 (C) is the vertical view after removing the described sealant 12 covering described component 14 Figure, Fig. 1 (D) is the lower surface top view of the SPM 10 of the present invention.
Substrate 16, as the carrier of SPM 10, has first surface and second table relative with this first surface Face.Insulating barrier 17 is arranged at the first surface of described substrate.Circuit-wiring layer 18 is formed at described surface of insulating layer；Component 14 back-offs are also welded in the upper surface precalculated position of described circuit-wiring layer 18；Radiator 15 is mounted in described component 14 Power component；Sealant 12 is coated on the surface of insulating barrier 17, circuit-wiring layer 18 and component 14 is covered, and makes institute State radiator 15 part surface exposed.
Specifically, power component is Planar power device, as IGBT manages, it is necessary to use LIGBT.Component 14 comprises Power component is small-power element, it may not be necessary to use radiator heat-dissipation.Even if needing radiator, then radiator is mounted on Power component in described component is when sealant 12 is coated on the surface of insulating barrier 17, exposed by spreader surface；Heat radiation Device is fin, and fin surface can consider to carry out electrosilvering process, increases soaking into property.Sealant 12 is sealing resin layer.
Further, at least one edge close of wiring 18, there is the special circuit for configuration pin 11 Wiring, referred to as pin pad 18A.Pin 11 pin pad 18A connects and from the described outer extension of wiring 18.Described pin 11 Surface is coated with coating.
The such each element of following description.
Circuit substrate 16 is the rectangular plate being made up of the aluminum of the materials such as 1050,5052.Here, in order to reduce cost, can To use the aluminium of 1050, in order to improve hardness, the aluminium of 5052 can be selected；Pressure in order to improve, aluminium can be carried out Anodized, in order to improve thermal diffusivity, it is also possible to does not make anodic oxidation.The thickness of circuit substrate 16 can be designed as 1.5mm～2.0mm.
The insulating barrier 17 being positioned at one of them surface of substrate 16 is to can be designed as thickness 100 μm～200 μm, thermal conductivity 2W/ (m*K)～3W/ (m*K), here, in order to cost-effective and improve heat conductivity, thickness 100 μm can be selected, resistance in order to improve Pressure, can select thickness 200 μm, and thickness is typically not to be exceeded 200 μm, here, the thickness of insulating barrier selects the thickest, and thermal conductivity Should select the highest accordingly.
Wiring 18 is made by the form of punching press or etching by the copper material that thickness is more than 2 ounces, in order to anti- Oxidation, the upper surface of described wiring 18 can carry out gold-plated process, for cost, the upper surface of described wiring 18 Can also carry out silver-plated process, or be transported by vacuum or nitrogen gas packing, upper surface does not deals with.
Component 14 is fixed on described wiring 18 by upside-down mounting.Described component 14 uses transistor or two poles The active components such as pipe or the passive element such as electric capacity or resistance.Further, the fin 15 by being made up of copper etc. is mounted on The element back side that the caloric values such as power component are big.
Here, be designed to be provided with a plurality of pin 11 on one side, it has the effect such as carrying out inputting, export with outside. Pin 11 and pin pad 18A are welded by electrical binding agents of conduction such as scolding tin.
Pin 11 typically uses the metals such as copper to make, and copper surface forms one layer of nickeltin layer by chemical plating and plating, The thickness of alloy-layer is generally 5 μm, and coating can protect copper not to be corroded oxidation, and can improve weldability.Here, pin 11 can To be only located at one of them edge of SPM 10, it is also possible to be located at relative two limit of SPM 10 Edge, it is also possible to be located at wherein three edges of SPM 10, it is also possible to be located at four edges of SPM 10；
Described sealant 12 can use thermosetting resin molding to be used as injecting mould mode by transmission mould mode and use Thermoplastic resin moulds.Here, described sealant 12 fully seals all elements in the one side of described wiring 18.? This, described circuit substrate 16 lower surface is also covered by described sealant 12, makes the humidity ability of SPM 10 be able to Improve；Here, because described power component is also fully sealed by described sealant 12, so, described sealant 12 typically should Select the material that angle-style crystallization is more, to improve its thermal conductivity, it may be considered that select 3300 series or the 3600 of Hitachi of Panasonic Series；It addition, for the reliability ensureing described SPM 10, the creepage trace ability of described sealant 12 should be not low In 500V.
SPM provides the benefit that: make component by upside-down mounting mode, including middle low power component Form electrical connection, it is no longer necessary to metal bonding line, provide cost savings；By module all elements resin seal, carry to greatest extent High water resistant gas enters effect；Even if invading in outside moisture, because the most there is not metal wire, it is difficult to constitute corrosion.
With reference to Fig. 2, the manufacture method of described SPM is described, comprises the following steps:
Step S110, makes the substrate as carrier, and the first surface in described substrate covers insulating barrier；Wherein, described Substrate also has the second surface relative with described first surface；
Step S120, lays circuit-wiring layer in described surface of insulating layer；
Step S130, in the surface-mounted component of described circuit-wiring layer, wherein, described component is with back-off Mode is assembled；
Step S140, in the Surface coating sealant of described insulating barrier, by described circuit-wiring layer and described component Cover.
Step S140 is particularly as follows: be arranged around thermosetting resin frame on the surface of described insulating barrier；In described thermohardening tree Thermoplastic resin is injected to seal described circuit-wiring layer, component and described substrate in the range of fat frame.
Also included before step S130: make the step of the pin of independent band coating.This step specifically includes: choose Copper base material, to Copper base material by the way of punching press or etching, is made pin in a row, is connected by reinforcement between pin；Institute State pin surface and sequentially form nickel dam and nickeltin layer, obtain the pin of band coating.
Before step S140 further comprising the steps of: weld described component in described wiring by Reflow Soldering On layer becomes；Remove the scaling powder remaining in described insulating barrier.
Total incapsulation technology injecting glue at utmost ensure that the compactness of SPM, so that SPM Reliability is improved；Eliminate metal wire bonding and matting, the reliability of further SPM, but also save Save equipment investment, improve production efficiency, reduced technique management and control requirement, under making the manufacture difficulty of SPM significantly Fall, fine ratio of product is improved, and reduce further the cost of SPM.
In more specifically embodiment, in conjunction with Fig. 3 (A) to Fig. 8, the manufacture method of SPM includes following work Sequence.
First operation, with reference to Fig. 3 (A) and 3 (B):
First operation of the present invention is the operation as feature of present invention, and this operation is to be formed on sizeable aluminium sheet The operation of wiring.
First, with reference to Fig. 3 (A), the sizeable circuit substrate of circuit layout design 16 as required, for general SPM, the size of a piece can choose 64mm × 30mm, and the size that the minor face of three pieces is connected is 50mm × 75mm, is formed One three yoke plate unit being made up of three pieces of SPM 10 metal circuit base boards 16.The surface of aluminium base 16 is provided with Insulating barrier 17.It addition, the surface mount at insulating barrier 17 has the Copper Foil as wiring 18.Then the copper this operation manufactured Paper tinsel is etched, and removes Copper Foil partly, forms described wiring 18 and pin pad 18A.
Here, the direct aluminium to 1m × 1m that is formed by of sizeable aluminium base carries out the mode of gong plate process Being formed, gong cutter uses high-speed steel as material, and motor uses the rotating speed of 5000 revs/min, under gong cutter is rectangular with aluminium plane Cutter, the edge that can make 1100 aluminiums is rectangular, and burr is less than 10 μm, it is possible to by etch tool, etched by chemical reaction Go out specific shape.With reference to X-X ' the line profile 3 (B) prolonging Fig. 3 (A).
In the occasion that antagonism oxidation requirements is the highest, can be by the way of electrogilding or chemistry turmeric, at described circuit cloth Line 18 surface forms layer gold.
Here, the thickness of the copper coin for manufacturing described wiring 18 should be not less than 2 ounces, it is ensured that there be enough leading to Stream ability.
Here, the most also by V-CUT mode by described three yoke plate unit the most separately, V-CUT can avoid described insulating barrier 17 to exist There is rhegma during punching press, thus improve the long-term reliability of described SPM 10.
Here, because be no longer necessary to nation's line procedures, described wiring 18 the most no longer possesses binding point, therefore, for Identical circuit function, the area of described circuit substrate 16 can reduce, and the circuit substrate size of existing technology is typically designed as 64mm × 30mm, and the circuit substrate of the present embodiment is designed as 50mm × 25mm, embodies the miniaturization after need not bonding line Effect.
Second operation, with reference to Fig. 4 (A) and Fig. 4 (B):
Second operation of the present invention is the operation as feature of present invention, and this operation is formed into the pin of independent band coating The operation of 11.
Each pin 11 is to use Copper base material, and making length C is 25mm, and width K is 1.5mm, and thickness H is the strip of 1mm Shape, as shown in Fig. 4 (A)；Here, for ease of assembling, one end suppresses certain radian wherein, as shown in Fig. 4 (B)；
Then nickel dam is formed by the method for chemical plating: by nickel salt and sodium hypophosphite mixed solution, and with the addition of suitable When chelating agent, form nickel dam on the copper material surface forming given shape, at metallic nickel there is the strongest passivation ability, can be fast Fast-growing becomes one layer of very thin passivating film, can resist the corrosion of air, alkali and some acid.Nickel plating crystallization is superfine little, nickel layer thickness one As be 0.1 μm；
Then pass through hydrosulphate technique, at room temperature the copper material forming shape and nickel dam is immersed in positive stannum from Being energized in the plating solution of son, form nickeltin layer on nickel dam surface, nickel layer thickness general control is in 5 μm, and the formation of nickel dam is very big Improve protectiveness and solderability；
Arriving this, described pin 11 has manufactured.
Here, the described pin 11 of the present invention is single pin one by one, it is different from the entire row pin of current art, because of The described wiring 18 being fixed on for described pin 11 is only wrapped by resin portion, and impact strength is limited, single Only pin avoids the operation of excision reinforcement, it is possible to reduce the systemic shock of the SPM 10 to the present invention.
3rd operation, with reference to Fig. 5 (A) and 5 (B):
3rd operation of the present invention is the operation as feature of present invention, and this operation is at wiring 18 surface upside-down mounting electricity Circuit component 14 and the operation of the described pin 11 of configuration.
First, with reference to side view Fig. 5 (A) and top view Fig. 5 (B), the wiring 18 made is passed through paste solder printing Machine, uses steel mesh, the ad-hoc location of described wiring 18 is carried out tin cream application, and steel mesh can use the thickness of 0.13mm.Logical Cross the equipment such as SMT machine or DA machine, carry out component 14, including being configured the component 14 of described fin 15, and draw The installation of foot 11, described component 14 can directly be inverted in the ad-hoc location of described wiring 18, pin 11 then one end Being placed on described pad 18A, the other end needs carrier 20 to be fixed, and described carrier 20 is by material systems such as synthesis stones Become.
Then, the described circuit substrate 16 being put on described carrier 20 is solidified by Reflow Soldering, tin cream, described component 14 and described pin 11 fixed.
Here, reflux temperature is usually no more than 300 DEG C, therefore, described power component 14 and described fin 15 will not be Separate during backflow.
4th operation, with reference to Fig. 6:
5th operation of the present invention is the operation as feature of present invention, and this operation is to illustrate to be sealed electricity by sealing resin 12 The operation of road wiring 18.Fig. 6 represents the operation of the wiring 18 using mould 50 to be carried by substrate 16 by sealing resin sealing Profile.
First, toasting wiring 18 in oxygen-free environment, baking time is no less than 2 hours, baking temperature With selection 125 DEG C.
The substrate 16 of good for configuration described wiring 18 is transported to model 44 and 45.By making the specific part of pin 11 Contact with fixing device 46, carry out the location of described circuit substrate 16.
During matched moulds, it is being formed in the die cavity within mould 50 placement circuit substrate 16, is then being injected sealing by cast gate 53 Resin formation sealant 12.The method carrying out sealing can use and uses the transmission mould molding of thermosetting resin or use thermohardening tree The injection mould molding of fat.And, the gas of corresponding sealing resin 12 mold cavity from cast gate 53 injection is by air vent 54 row It is put into outside.
Contact here, upper mold 44 does not produce with module 10 with lower mold 45, for the ease of the location in the die cavity of module 10, have Time also use the mode configuring thimble in upper mold 44, the module 10 position in die cavity is positioned, shortcoming is can be for module 10 leave pore, affect the compactness of module, and the present embodiment is illustrated in and at utmost improves the consideration of module 10 compactness, is not upper Mould configuration thimble；Because this programme mainly applies the field of middle low power module, for the institute of described circuit substrate 16 bottom surface The thickness requirement stating sealant 12 is not strict, at ± 0.5mm, so need not thimble location.
After the demoulding, if installing radiator additional, then surface and circuit substrate 16 bottom surface of radiator is revealed from described sealant 12 Going out, if described sealant 12 overflows, glue is serious, or can grind except the operation of the glue that overflows except excessive glue by adding a laser.
5th operation, with reference to Fig. 7:
The present invention the 6th operation is by the molding of described pin 11 and the operation of functions of modules test, SPM warp Thus operation completes as goods.
I.e. transmitting mould mold assembly step in front operation makes other parts in addition to pin 11 all be sealed by resin 12.This operation According to the length used and shape needs, such as, in the position of dotted line 51, external pin 11 is bent into definite shape, it is simple to after Continuous assembling.
Then module is put in test equipment, carry out the electric parameters testing of routine, because described pin 11 is separate, There may be part pin after molding not in same level, impact contact, so it is generally required to first carrying out test machine gold hands Refer to the engaged test with pin, if engaged test is not passed through, need described pin 11 is trimmed process, until contact is surveyed After pinging, then carry out electrical characteristics test, including the test events such as pressure, the quiescent dissipation of insulating, delay time, test passes Person is finished product.
Utilize above-mentioned operation, complete the SPM 10 shown in Fig. 2.
These are only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and Any amendment, equivalent and the improvement etc. made within principle, should be included within the scope of the present invention.

Claims (10)

1. a SPM, it is characterised in that including:
As carrier, there is first surface and the substrate of the second surface relative with this first surface；
It is arranged at the insulating barrier of the first surface of described substrate；
It is formed at the circuit-wiring layer of described surface of insulating layer；
Back-off is also welded in the component in upper surface precalculated position of described circuit-wiring layer；And
It is coated on the surface of described insulating barrier, the sealant described circuit-wiring layer and component covered.
2. SPM as claimed in claim 1, it is characterised in that also include that pin, described circuit-wiring layer include By antermarginal pin pad, described pin is connected with described pin pad and extends outside described wiring.
3. SPM as claimed in claim 2, it is characterised in that described pin surface is coated with coating.
4. SPM as claimed in claim 2, it is characterised in that described pin is at least located at described intelligent power mould One of them edge of block.
5. SPM as claimed in claim 1, it is characterised in that described substrate covers is also existed by described sealant In.
6. SPM as claimed in claim 1, it is characterised in that described sealant is resin bed.
7. the manufacture method of a SPM, it is characterised in that comprise the following steps:
Making the substrate as carrier, the first surface in described substrate covers insulating barrier；Wherein, described substrate also has and institute State the second surface that first surface is relative；
Circuit-wiring layer is laid in described surface of insulating layer；
In the surface-mounted component of described circuit-wiring layer, wherein, described component assembles in the way of back-off；
In the Surface coating sealant of described insulating barrier, described circuit-wiring layer and described component are covered.
8. the manufacture method of SPM as claimed in claim 7, it is characterised in that be the surface of described insulating barrier Cladding sealant, described component is covered and make described heat sink part surface exposure sealant step particularly as follows:
It is arranged around thermosetting resin frame on the surface of described circuit isolation layer；
Thermoplastic resin is injected to seal described circuit-wiring layer, component and institute in the range of described thermosetting resin frame State substrate.
9. the manufacture method of SPM as claimed in claim 7, it is characterised in that at be set forth in described wiring Also include before the surface-mounted component step of layer:
Make the pin of independent band coating；Specifically include:
Choose Copper base material, to Copper base material by the way of punching press or etching, make pin in a row, between pin by reinforcement even Connect；
Sequentially form nickel dam and nickeltin layer at described pin surface, obtain the pin of band coating；
Described pin is welded on the pin pad at described circuit-wiring layer edge by Reflow Soldering.
10. the manufacture method of SPM as claimed in claim 7, it is characterised in that be described insulating barrier Surface coating sealant, described component is covered and make described heat sink part surface exposure sealant step before also Comprise the following steps:
Remove the scaling powder remaining in described insulating barrier.
CN201610624916.3A 2016-07-29 2016-07-29 A kind of SPM and manufacture method thereof Pending CN106098650A (en)

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CN104112730A (en) * 2013-06-09 2014-10-22 广东美的制冷设备有限公司 Intelligent power module and manufacturing method thereof
CN104332453A (en) * 2013-07-22 2015-02-04 西安永电电气有限责任公司 Double-side-fixed heat radiation structure based on plastic package type IPM lead frame
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US20120319260A1 (en) * 2011-06-17 2012-12-20 Samsung Electro-Mechanics Co., Ltd. Power module package and system module having the same
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Application publication date: 20161109