WO2018006657A1 - 半导体激光器及其温度控制方法 - Google Patents

半导体激光器及其温度控制方法 Download PDF

Info

Publication number
WO2018006657A1
WO2018006657A1 PCT/CN2017/084839 CN2017084839W WO2018006657A1 WO 2018006657 A1 WO2018006657 A1 WO 2018006657A1 CN 2017084839 W CN2017084839 W CN 2017084839W WO 2018006657 A1 WO2018006657 A1 WO 2018006657A1
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
laser
temperature control
humidity
input current
Prior art date
Application number
PCT/CN2017/084839
Other languages
English (en)
French (fr)
Inventor
胡飞
谭大治
李屹
Original Assignee
深圳市光峰光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市光峰光电技术有限公司 filed Critical 深圳市光峰光电技术有限公司
Publication of WO2018006657A1 publication Critical patent/WO2018006657A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management

Definitions

  • the present application relates to semiconductor lasers, and more particularly to temperature control methods in semiconductor lasers.
  • the laser light source has the advantages of high brightness, wide color gamut, good reliability, energy saving and environmental protection, and is widely used in various types of projection devices.
  • the semiconductor lasers commonly used in laser sources have an electro-optical conversion efficiency and reliability that are closely related to the working envelope temperature of the laser. For example, when a red laser diode case temperature is 25 ° C, 3A input current, the laser can output 2.5W red light; at 35 ° C shell temperature, it also outputs 2.5W red light, the input current needs to reach 3.75A, that is, the input power needs to increase at least 25%.
  • the current practice is to use a cooling mechanism (TEC) to control the working temperature of the laser, and a constant current source to supply a constant circuit to the laser to obtain a stable output optical power.
  • TEC cooling mechanism
  • the logic of this control method is simple, the working temperature of the laser is constant, and the life is long.
  • the following problems are difficult to solve: First, the working temperature of the laser is lower than the ambient temperature. When the ambient humidity is high, the water vapor in the air will condense on the surface of the TEC cold junction and other temperatures lower than the ambient temperature, which may cause the output power to drop. , short circuit, damaged optical parts, etc., dominate affect the reliability of the projection device; Second, as the ambient temperature increases, the temperature difference between the cold and hot ends of the TEC increases, and the cooling efficiency COP of the TEC decreases rapidly, resulting in a decrease in the efficiency of the projection device.
  • the application provides a semiconductor laser and a temperature control method thereof.
  • the semiconductor laser has a accommodating cavity, and the accommodating cavity is provided with a laser and a cooling mechanism for cooling the laser;
  • the temperature control method includes a first temperature control mode, and the first temperature control mode includes the steps of:
  • External data acquisition collecting the temperature and humidity of the external environment of the semiconductor laser
  • Calculate the dew point temperature Calculate the ambient dew point temperature based on the collected temperature and humidity;
  • Temperature setting determining the working shell temperature of the laser according to the ambient dew point temperature, the working shell temperature is higher than or equal to the ambient dew point temperature; and setting the temperature control point of the cooling mechanism to be equal to the working shell temperature;
  • Adjust the input current Input the corresponding current to the laser according to the calculated input current value.
  • the interval is set to return to the external data acquisition step.
  • the temperature control method further includes a second temperature control mode, wherein the selection between the first temperature control mode and the second temperature control mode is selectable; the second temperature control mode Including steps:
  • Temperature collection in the cavity collecting the temperature of the space surrounding the laser in the accommodating cavity
  • Temperature setting determining a working case temperature of the laser according to the collected temperature in the cavity, the working case temperature is equal to or higher than the temperature in the cavity, and setting a temperature control point of the cooling mechanism to be equal to the temperature in the cavity;
  • Humidity collection in the cavity collecting the humidity of the space surrounding the laser in the accommodating cavity;
  • Temperature adjustment Determine the working case temperature according to the collected humidity in the cavity, and adjust the temperature control point to return to the step of determining the input current.
  • the first step length indicates the step size of the temperature adjustment.
  • the value of the first step length decreases as the humidity increases.
  • the semiconductor laser has a receiving cavity, and the receiving cavity is provided with a laser and a cooling mechanism for cooling the laser;
  • the temperature control method includes the steps of:
  • Temperature collection in the cavity collecting the temperature of the space surrounding the laser in the accommodating cavity
  • Temperature setting determining a working case temperature of the laser according to the temperature of the collected cavity, the working case temperature is equal to or higher than the temperature inside the cavity, and setting the temperature control point of the cooling mechanism to be equal to the temperature inside the cavity;
  • Humidity collection in the cavity collecting the humidity of the space surrounding the laser in the accommodating cavity;
  • Temperature adjustment Determine the working case temperature according to the collected humidity, and adjust the temperature control point to return to the step of determining the input current.
  • the value of the first step length decreases as the humidity increases.
  • the semiconductor laser provided by the present application includes:
  • a housing enclosing to form a receiving cavity
  • the laser being mounted in the accommodating cavity
  • the parameter detecting mechanism comprising a temperature sensor and a humidity sensor, wherein the parameter detecting mechanism is disposed outside the housing and/or in the receiving cavity;
  • a control circuit wherein the laser, the cooling mechanism and the parameter detecting mechanism are respectively connected to the control circuit, and the control circuit determines a working case temperature capable of preventing condensation of the laser water vapor according to the temperature and humidity signals collected by the parameter detecting mechanism, and according to the input current.
  • the function of the working case temperature and the laser output optical power ensures that the output power of the laser is substantially stable, and the input current corresponding to the current working case temperature is calculated, and the current is adjusted by the input current.
  • the parameter detecting mechanism disposed outside the casing is a first parameter detecting mechanism
  • the control circuit determines the ambient dew point temperature according to the temperature and humidity collected by the first parameter detecting mechanism, and operates the laser
  • the temperature control points of the shell temperature and cooling mechanism are set equal and higher than or equal to the ambient dew point temperature.
  • the parameter detecting mechanism disposed in the accommodating cavity is a second parameter detecting mechanism
  • the control circuit uses the temperature collected by the second parameter detecting mechanism as the initial working case temperature of the laser and the control of the cooling mechanism The temperature is adjusted, and the working chamber temperature and the temperature control point are adjusted according to the humidity collected by the second parameter detecting mechanism.
  • the temperature and humidity of the external environment of the semiconductor laser or the temperature and humidity of the cavity are first collected, and then a condensation preventing temperature is determined according to the collected temperature and humidity.
  • Working shell temperature and then adjusting the temperature control point according to the determined working shell temperature, and calculating the current working shell on the premise of ensuring that the output optical power of the laser is substantially stable according to the input current as a function of the working chamber temperature and the output optical power of the laser
  • the input current corresponding to the temperature is adjusted.
  • the temperature control method adjusts the working shell temperature and the supply current of the laser in real time by monitoring the change of temperature and humidity in the environment/cavity to prevent condensation of water vapor while ensuring stable output optical power.
  • FIG. 1 is a schematic structural view of a semiconductor laser in a first embodiment of a temperature control method for a semiconductor laser according to the present application;
  • FIG. 2 is a flow chart of a first embodiment of a temperature control method for a semiconductor laser according to the present application
  • Figure 3 is a characteristic diagram of a red laser input current and output power
  • Figure 4 is a characteristic diagram of a red laser input current and voltage
  • FIG. 5 is a schematic structural view of a semiconductor laser in a second embodiment of a temperature control method for a semiconductor laser according to the present application;
  • FIG. 6 is a flow chart of a second embodiment of a temperature control method for a semiconductor laser of the present application.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • the temperature control method of the semiconductor laser provided in the first embodiment is based on a semiconductor laser.
  • the semiconductor laser has a receiving cavity in which a laser and a cooling mechanism for controlling the temperature of the laser are mounted.
  • FIG. 1 shows a specific example of the above semiconductor laser, which is not the only choice of the temperature control method shown in this embodiment.
  • the red laser 303 is mounted on the bottom plate 304, and the bottom plate 304 is connected to the heat sink 307 through a heat equalizing plate 305 and a cooling mechanism (TEC) 306.
  • the bottom plate 304 is fixed to the heat sink 307 by elastic connection (not shown in the fixing mode), and the contact faces are closely adhered by a high thermal conductivity silicone grease or other low thermal resistance.
  • the cooling mechanism is not limited to being a Peltier element (TEC) 306, but may be other temperature-controlled water-cooling mechanisms, heat exchanger and fan combinations, refrigerants, and the like.
  • TEC Peltier element
  • Reference numeral 308 denotes a temperature measuring point of a temperature sensing device such as a thermistor or a thermocouple, and monitors the temperature of the shell of the red laser 303.
  • the laser is powered by a constant current source, and the closed loop control circuit of the TEC can achieve high temperature control accuracy and ensure the stability of the laser shell temperature.
  • the laser outputs a stable optical power under the premise that the supply current and the case temperature are both stable.
  • the module housing 301, the housing cover 302, the heat sink 307 and the light-emitting lens 310 together form a housing, which is combined into a closed receiving cavity 311 to meet the dustproof requirement.
  • the usual sealing structure does not isolate moisture, so the humidity in the chamber increases as the ambient humidity increases.
  • a parameter detecting mechanism is added.
  • the parameter detecting mechanism includes a temperature sensor and a humidity sensor.
  • the temperature sensor and the humidity sensor may be separately set or integrated.
  • the laser, the cooling mechanism and the parameter detecting mechanism are respectively connected to the control circuit, and the control circuit determines the working case temperature which can prevent the condensation of the laser water vapor according to the temperature and humidity signals collected by the parameter detecting mechanism, and according to the input current, the working case temperature and the laser output.
  • the function of the optical power ensures that the output power of the laser is substantially stable, calculates the input current corresponding to the current working case temperature, and uses this input current to adjust the laser.
  • the temperature and humidity sensor are integrated into a temperature and humidity sensor 312 in this embodiment.
  • the temperature and humidity sensor 312 is defined as a first parameter detecting mechanism disposed outside the accommodating cavity 311 for collecting temperature and humidity of the external environment. Thereby, as the ambient temperature increases, the working shell temperature of the laser is increased synchronously.
  • the temperature control method includes:
  • Calculate the dew point temperature Calculate the ambient dew point temperature Tra based on the collected temperature Ta and humidity Ha.
  • the working case temperature T_set of the laser is determined according to the ambient dew point temperature Tra, the working case temperature T_set is higher than or equal to the environmental dew point temperature Tra; and the temperature control point T_cold of the cooling mechanism is set equal to the working case temperature T_set.
  • the working case temperature T_set is higher than or equal to the environmental dew point temperature Tra, which can prevent the condensation phenomenon of the semiconductor laser caused by the temperature difference problem in the external environment.
  • Determining the input current According to the input current I_in as a function of the working case temperature T_set and the laser output optical power P_out, the laser output optical power P_out is substantially stabilized, and the input current I_in corresponding to the current working case temperature T_set is calculated.
  • the output optical power P_out is substantially stable, which means that the output optical power P_out is kept within a certain range of values, and this value range can be artificially set according to actual needs.
  • the input current I_in in different lasers is a function of the working case temperature T_set and the laser output optical power P_out.
  • FIG. 3 and FIG. 4 are characteristic curves of a red laser.
  • Adjust the input current input the corresponding current to the laser according to the calculated input current I_in value.
  • a flow chart based on the temperature control method is as follows:
  • Step S10 collecting the temperature and humidity of the external environment outside the accommodating cavity.
  • Step S12 calculating the working case temperature T_set of the laser according to the temperature and humidity collected in step S10;
  • Step S14 calculating the input current I_in of the laser according to the working case temperature T_set, and inputting a corresponding current to the laser according to the calculated value;
  • Step S16 After the step of adjusting the input current is completed, the interval is set to return to the external data acquisition step.
  • the interval can be flexibly set according to actual needs.
  • the case temperature T_set sets the value of the temperature control point T_cold to the value of the working case temperature T_set and proceeds to the next step.
  • the working case temperature and the supply current of the laser are adjusted in real time, which not only minimizes the working temperature of the laser, but also prevents condensation and ensures stable output optical power.
  • the TEC cooling capacity is 54 W
  • the cold end temperature is 20 ° C.
  • the thermal end to ambient thermal resistance is 0.16 ° C / W.
  • the TEC power is 32.6 W
  • the hot end temperature is 40 ° C
  • the TEC hot and cold end temperature difference is 20 ° C
  • the cooling efficiency COP is 1.66.
  • the ambient temperature rises to 35 °C the calculation shows that the TEC power is 93.9W
  • the hot end temperature is 60 °C
  • the TEC hot and cold end temperature difference is 40 °C
  • the cooling efficiency COP is reduced to 0.57.
  • the laser shell temperature is also controlled at 35 ° C.
  • the TEC cooling capacity is 69.8W.
  • the calculation shows that the TEC power is 73.7W, the hot end temperature is 60°C, the cold end temperature is 30°C, the TEC hot and cold end temperature difference is 30°C, and the cooling efficiency COP is 0.94, which is still at a high level. .
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • the temperature control method of the semiconductor laser provided in the second embodiment is based on a semiconductor laser.
  • the semiconductor laser has a receiving cavity 311 in which a laser 303 and a cooling mechanism 306 for controlling the temperature of the laser are mounted.
  • FIG. 5 shows a specific example of the semiconductor laser described above, which is different from the structure shown in the first embodiment in that the temperature and humidity sensor 313 is defined as a second parameter detecting mechanism, which is disposed in the receiving cavity.
  • the 311 is located around the laser 303 for collecting the temperature T_air of the space surrounding the laser 303 in the accommodating cavity 311. Thereby, the working case temperature of the laser 303 is synchronously increased as the temperature in the accommodating cavity 311 is increased.
  • the temperature control method includes the steps of:
  • In-cavity temperature acquisition The temperature T_air of the space in the accommodating cavity 311 located around the laser 303 is collected.
  • the working case temperature T_set of the laser 303 is determined according to the temperature T_air in the collected cavity 311.
  • the working case temperature T_set is equal to or higher than T_air, and the temperature control point T_cold of the cooling mechanism 306 is set equal to T_air.
  • the working case temperature T_set is higher than or equal to the temperature T_air in the cavity 311, which can prevent the condensation of water vapor caused by the temperature difference in the environment of the cavity 311.
  • Determining the input current ensuring that the output power P_out of the laser 303 is substantially stable. According to the input current I_in as a function of the working case temperature T_set and the output optical power P_out of the laser 303, the input current I_in corresponding to the current working case temperature T_set is calculated.
  • different lasers 303 have respective characteristic curves, and the input current I_in in different lasers 303 is a function of the working case temperature T_set and the laser output optical power P_out.
  • the functional relationship can be obtained by interpolation, curve fitting or other methods from the characteristic data of the characteristic curve or the laser. This is a known prior art and will not be rumored here.
  • Humidity Collection in Cavity 311 The humidity H_air of the space in the accommodating cavity 311 located around the laser 303 is collected.
  • Temperature adjustment Determine the working case temperature T_set according to the collected humidity H_air, and adjust the temperature control point T_cold to return to the step of determining the input current.
  • the upper limit of the humidity threshold and the lower limit of the humidity in the cavity 311 may be preset, and the collected humidity H_air is compared with the upper limit of the threshold and the lower limit of the threshold, and the current temperature control point T_cold and the working case temperature T_set are adjusted or maintained according to the comparison result. the size of.
  • the following first step is set to T_step. Specifically, please refer to FIG. 6.
  • the temperature control method includes:
  • Step S20 collecting the temperature T_air of the space in the accommodating cavity 311 located around the laser 303;
  • Step S22 setting the temperature control point T_cold of the control program of the cooling mechanism according to the temperature T_air collected in step S20, and setting the value of the temperature control point T_cold to be equal to the value of T_air;
  • Step S24 calculating the input current I_in of the laser 303 according to the temperature control point T_cold, and inputting a corresponding current to the laser 303 according to the calculated value;
  • Step S26 The humidity H_air of the space located around the laser 303 in the accommodating cavity 311 is collected, and the temperature of the temperature control point T_cold is adjusted according to the collected humidity H_air, and the process returns to step S24.
  • step S26 the upper threshold value and the lower limit value of the humidity in the cavity 311 are set in advance, and the collected humidity H_air is compared with the upper limit of the threshold and the lower limit of the threshold, and the value of the current temperature control point T_cold is adjusted or maintained according to the comparison result.
  • the new temperature control point T_cold the current temperature control point T_cold-T_step
  • the new working case temperature T_set the new temperature control point T_cold
  • T_step there are two ways to take the value of T_step: 1.
  • the value is set, and the step size is small, for example, between 1 °C and 2 °C; 2: According to the humidity change in the cavity 311, the step size can be larger when the humidity is small, and the step size is small when the humidity is high, that is, the value of the step length T_step decreases as the humidity increases.
  • the upper and lower thresholds are generally taken within the humidity range where the product requires normal operation. For example, the product requires a humidity range of 5% - 95%, then the upper and lower thresholds can take any value in this range; when the upper and lower thresholds are close, such as 70%-73%, the approximate constant humidity control can be achieved.
  • the temperature in the cavity 311 is taken as the initial temperature control point of the TEC, that is, the working case temperature of the laser 303. Then adjust the TEC temperature control point according to the humidity in the cavity 311: If the humidity is lower than the lower threshold, the working temperature of the laser 303 can be further reduced, and the condensation of water vapor is not caused. If the humidity is higher than the upper limit of the threshold, the working temperature of the laser 303 needs to be increased to prevent condensation. If the humidity is between the upper and lower limits of the threshold, the working temperature of the laser 303 is not adjusted. The input current of the laser 303 is adjusted according to its operating housing temperature to ensure a stable output optical power.
  • the working case temperature and the supply current of the laser 303 are adjusted in real time, which not only minimizes the working temperature of the laser 303, but also prevents condensation and ensures stable output optical power.
  • the third embodiment provides a temperature control method for another semiconductor laser.
  • the temperature control method adopts a combination of the first embodiment and the second embodiment.
  • the temperature control method includes a first temperature control mode and a second temperature control mode, and selective switching is possible between the first temperature control mode and the second temperature control mode.
  • the first temperature control mode is the temperature control method shown in the first embodiment
  • the second temperature control mode is the temperature control method shown in the second embodiment.
  • the first temperature control mode is mainly used to determine the working temperature of the laser for the temperature and humidity of the application environment. Under normal circumstances, the change of the temperature and humidity of the environment is relatively slow, and the method can be used normally. But in some cases, For example, when the equipment is tested for temperature and humidity cycles, the ambient temperature and humidity change rapidly. When the ambient humidity is lowered, the humidity in the accommodating chamber is still high, and the environmental dew point Tra is lower than the dew point Trc in the cavity. Controlling the temperature of the laser shell according to Tra will cause condensation to occur.
  • the first temperature control mode is switched to the second temperature control mode. Otherwise, the second temperature control mode is switched to the first temperature control mode.
  • the second temperature control mode uses the cavity temperature Tac and the cavity humidity Hac, Real-time adjustment of the working temperature and supply current of the laser not only minimizes the working temperature of the laser, but also prevents condensation in the cavity and ensures stable output optical power.
  • the fourth embodiment provides a semiconductor laser including a housing, a laser, a cooling mechanism, a parameter detecting mechanism, and a control circuit.
  • the housing is enclosed to form an accommodating cavity, which may be a component that functions as a separate housing, or may be formed by a combination of a plurality of components, as shown in the first embodiment.
  • the laser is installed in the accommodating cavity, and the cooling mechanism cools and controls the laser.
  • the parameter detecting mechanism includes a temperature sensor and a humidity sensor, and a parameter detecting mechanism is provided outside the casing and/or in the accommodating cavity to detect temperature and humidity outside the casing and/or in the accommodating cavity.
  • the laser, the cooling mechanism and the parameter detecting mechanism are respectively connected with the control circuit, and the control circuit determines the working case temperature which can prevent the condensation of the laser water vapor according to the temperature and humidity signals collected by the parameter detecting mechanism, and according to the input current, the working case temperature and the laser output optical power.
  • the function relationship ensures that the output power of the laser is approximately stable, and the input current corresponding to the current working case temperature is calculated, and the input current is adjusted to the laser.
  • the parameter detecting mechanism disposed outside the casing is a first parameter detecting mechanism
  • the control circuit determines the ambient dew point temperature according to the temperature and humidity collected by the first parameter detecting mechanism, and the working temperature of the laser and the temperature control point of the cooling mechanism Set to equal and above or equal to the ambient dew point temperature.
  • the first embodiment For a specific control process, refer to the first embodiment.
  • the parameter detecting mechanism disposed in the accommodating cavity is a second parameter detecting mechanism
  • the control circuit uses the temperature collected by the second parameter detecting mechanism as the initial working case temperature of the laser and the temperature control point of the cooling mechanism, and according to the second parameter
  • the humidity collected by the detection mechanism adjusts the working chamber temperature and temperature control point.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

一种半导体激光器及其温度控制方法，先采集半导体激光器外部环境的温度和湿度或容置腔体(311)内的温度和湿度，然后根据采集到的温度和湿度来确定一个可防止水汽凝结现象的工作壳温，进而根据该确定的工作壳温调整控温点，并根据输入电流与工作壳温和激光器输出光功率的函数关系，在保证激光器输出光功率大致稳定的前提下，计算出当前工作壳温对应的输入电流，进行调整。该温度控制方法通过监控环境/腔体内温湿度的变化，实时调节激光器的工作壳温及供电电流，防止水汽凝结的同时又保证了稳定的输出光功率。

Description

半导体激光器及其温度控制方法 技术领域
本申请涉及半导体激光器，尤其是涉及半导体激光器中温度控制方法。
 背景技术
激光光源具有亮度高、色域广、可靠性好、节能环保等优点，在各类投影装置中得到越来越广泛的应用。激光光源普遍使用的半导体激光器，其电光转化效率以及可靠性与激光器的工作壳温息息相关。例如一种红色激光二极管壳温25℃时，3A输入电流，激光器能输出2.5W红光；35℃壳温时，同样输出2.5W红光，输入电流需要达到3.75A，即输入功率至少需要增加25%。因此对于此类半导体激光器，为了获得较好的电光效率及稳定的光功率输出， 目前通常的做法是利用冷却机构（TEC）控制激光器的工作壳温，应用恒流源给激光器供恒定电路，从而获得稳定的输出光功率。
 技术问题
这种控制方式的逻辑简单，激光器的工作壳温恒定，寿命长。但是存在以下问题难以解决：一是激光器的工作壳温比环境温度低，环境湿度较大时，空气中的水汽会在TEC冷端等温度低于环境温度的表面凝结，有可能导致出光功率下降、短路、光学件受损等产品失效， 严重影响投影装置的可靠性； 二是随着环境温度的升高，TEC的冷热端温差增大，TEC的制冷效率COP快速下降，导致投影装置的效率下降。
 技术解决方案
本申请提供一种半导体激光器及其温度控制方法。
本申请提供的温度控制方法，所述半导体激光器具有容置腔体，所述容置腔体内装有激光器和用于对激光器进行冷却的冷却机构；
所述温度控制方法包括第一温度控制模式，所述第一温度控制模式包括步骤：
外部数据采集：采集半导体激光器外部环境的温度和湿度；
计算露点温度：根据采集的温度和湿度计算出环境露点温度；
温度设置：根据环境露点温度确定激光器的工作壳温，所述工作壳温高于或等于环境露点温度；并将冷却机构的控温点设置为与工作壳温相等；
确定输入电流：根据输入电流与工作壳温和激光器输出光功率的函数关系，保证激光器输出光功率大致稳定，计算出当前工作壳温对应的输入电流；
调整输入电流：按照计算出的输入电流值向激光器输入对应的电流。
作为所述温度控制方法的进一步改进，在温度设置步骤中，将冷却机构的控温点与本步骤确定的工作壳温进行比较，如控温点=工作壳温，则进入下一步骤；如控温点≠工作壳温，则将控温点的值设置为工作壳温的值，并进入下一步骤。
作为所述温度控制方法的进一步改进，在调整输入电流步骤完成后，间隔设定时间，重返外部数据采集步骤。
作为所述温度控制方法的进一步改进，所述温度控制方法还包括第二温度控制模式，所述第一温度控制模式和第二温度控制模式之间可进行选择切换；所述第二温度控制模式包括步骤：
腔体内温度采集：采集容置腔体内位于激光器周围的空间的温度；
温度设置：根据采集的腔体内温度确定激光器的工作壳温，所述工作壳温等于或高于所述腔体内温度，并将冷却机构控温点设置为等于所述腔体内温度；
确定输入电流：根据输入电流与工作壳温和激光器输出光功率的函数关系，保证激光器输出光功率大致稳定，计算出当前工作壳温对应的输入电流；
腔体内湿度采集：采集容置腔体内位于激光器周围的空间的湿度；
温度调整：根据采集的腔体内湿度确定工作壳温，并调整控温点后，返回确定输入电流步骤。
作为所述温度控制方法的进一步改进，在温度调整中，预先设定腔体内湿度的阈值上限和阈值下限，当腔体内湿度＜阈值下限，则设置新控温点=当前控温点-第一步长，新的工作壳温=新控温点，并返回输入电流步骤，根据新工作壳温计算出输入电流；当腔体内湿度＞阈值上限，则设置新控温点=当前控温点+第一步长，新的工作壳温=新控温点，并返回输入电流步骤，根据新工作壳温计算出输入电流；当阈值下限＜腔体内湿度＜阈值上限，则返回输入电流步骤；其中，第一步长表示温度调节的步长。
作为所述温度控制方法的进一步改进，第一步长的值随着湿度的升高而减小。
作为所述温度控制方法的进一步改进，当容置腔体内的温度和/或湿度相比半导体激光器外部环境的温度和/或湿度高，且高出的差值等于或大于设定差值，则由第一温度控制模式切换到第二温度控制模式。
本申请提供的另一种温度控制方法，所述半导体激光器具有容置腔体，所述容置腔体内装有激光器和用于对激光器进行冷却的冷却机构；
所述温度控制方法包括步骤：
腔体内温度采集：采集容置腔体内位于激光器周围的空间的温度；
温度设置：根据采集的腔体内温度确定激光器的工作壳温，所述工作壳温等于或高于腔体内温度，并将冷却机构的控温点设置为等于腔体内温度；
确定输入电流：根据输入电流与工作壳温和激光器输出光功率的函数关系，保证激光器输出光功率大致稳定，计算出当前工作壳温对应的输入电流；
腔体内湿度采集：采集容置腔体内位于激光器周围的空间的湿度；
温度调整：根据采集的湿度确定工作壳温，并调整控温点后，返回确定输入电流步骤。
作为另一种温度控制方法的进一步改进，在温度调整中，预先设定腔体内湿度的阈值上限和阈值下限，当腔体内湿度＜阈值下限，则设置新控温点=当前控温点-第一步长，新的工作壳温=新控温点，并返回输入电流步骤，根据新工作壳温计算出输入电流；当腔体内湿度＞阈值上限，则设置新控温点=当前控温点+第一步长，新的工作壳温=新控温点，并返回输入电流步骤，根据新工作壳温计算出输入电流；当阈值下限＜腔体内湿度＜阈值上限，则返回输入电流步骤；其中，第一步长表示温度调节的步长。
作为另一种温度控制方法的进一步改进，所述第一步长的值随着湿度的升高而减小。
本申请提供的半导体激光器，包括：
壳体，所述壳体围合形成容置腔体；
激光器，所述激光器安装在容置腔体内；
冷却机构，所述冷却机构对激光器进行冷却控温；
参数检测机构，所述参数检测机构包括温度传感器和湿度传感器，在所述壳体的外部和/或容置腔体内设有所述参数检测机构；
以及控制电路，所述激光器、冷却机构和参数检测机构分别与控制电路连接，所述控制电路根据参数检测机构采集的温度和湿度信号，确定可防止激光器水汽凝结的工作壳温，并根据输入电流、工作壳温和激光器输出光功率的函数关系，保证激光器输出光功率大致稳定下，计算出当前工作壳温对应的输入电流，并以此输入电流调节激光器。
作为所述半导体激光器的进一步限定，设置在壳体外部的参数检测机构为第一参数检测机构，所述控制电路根据第一参数检测机构采集的温度和湿度确定环境露点温度，并将激光器的工作壳温和冷却机构的控温点设置为相等且高于或等于环境露点温度。
作为所述半导体激光器的进一步限定，设置在容置腔体内的参数检测机构为第二参数检测机构，所述控制电路将第二参数检测机构采集的温度作为激光器的初始工作壳温和冷却机构的控温点，并根据第二参数检测机构采集的湿度调整工作壳温和控温点。
作为所述半导体激光器的进一步限定，预先设定腔体内湿度的阈值上限和阈值下限，当湿度＜阈值下限，则设置新控温点=当前控温点-第一步长，新的工作壳温=新控温点，并重新确定输入电流；当腔体内湿度＞阈值上限，则设置新控温点=当前控温点+第一步长，新的工作壳温=新控温点，并重新确定输入电流；当阈值下限＜湿度＜阈值上限，则保持当前输入电流；其中，第一步长表示温度调节的步长。
 有益效果
本申请的有益效果是：
本申请提供的半导体激光器及其温度控制方法中，先采集半导体激光器外部环境的温度和湿度或容置腔体内的温度和湿度，然后根据采集到的温度和湿度来确定一个可防止水汽凝结现象的工作壳温，进而根据该确定的工作壳温调整控温点，并根据输入电流与工作壳温和激光器输出光功率的函数关系，在保证激光器输出光功率大致稳定的前提下，计算出当前工作壳温对应的输入电流，进行调整。该温度控制方法通过监控环境/腔体内温湿度的变化，实时调节激光器的工作壳温及供电电流，防止水汽凝结的同时又保证了稳定的输出光功率。
 附图说明
图1为本申请半导体激光器的温度控制方法第一种实施例中半导体激光器结构示意图；
图2为本申请半导体激光器的温度控制方法第一种实施例流程框图；
图3为一种红激光器输入电流与输出功率之间的特性曲线图；
图4为一种红激光器输入电流与电压之间的特性曲线图；
图5为本申请半导体激光器的温度控制方法第二种实施例中半导体激光器结构示意图；
图6为本申请半导体激光器的温度控制方法第二种实施例流程框图。
 本发明的最佳实施方式
下面通过具体实施方式结合附图对本发明作进一步详细说明。本申请可以以多种不同的形式来实现，并不限于本实施例所描述的实施方式。提供以下具体实施方式的目的是便于对本申请公开内容更清楚透彻的理解，其中上、下、左、右等指示方位的字词仅是针对所示结构在对应附图中位置而言。
然而，本领域的技术人员可能会意识到其中的一个或多个的具体细节描述可以被省略，或者还可以采用其他的方法、组件或材料。在一些例子中，一些实施方式并没有描述或没有详细的描述。
此外，本文中记载的技术特征、技术方案还可以在一个或多个实施例中以任意合适的方式组合。对于本领域的技术人员来说，易于理解与本文提供的实施例有关的方法的步骤或操作顺序还可以改变。因此，附图和实施例中的任何顺序仅仅用于说明用途，并不暗示要求按照一定的顺序，除非明确说明要求按照某一顺序。
本文中为部件所编序号本身，例如“第一”、“第二”等，仅用于区分所描述的对象，不具有任何顺序或技术含义。而本申请所说“连接”、“联接”，如无特别说明，均包括直接和间接连接（联接）。
实施例一：
本实施例一提供的半导体激光器的温度控制方法基于一种半导体激光器。该半导体激光器具有容置腔体，容置腔体内装有激光器和用于对激光器控温的冷却机构。
具体来说，请参考图1，图1所示为上述半导体激光器的一种具体示例，并非为本实施例所示温度控制方法的唯一选择。
其中，红激光器303安装在底板304上，底板304通过均热板305、冷却机构（TEC）306与热沉307相连。底板304通过弹性连接的方式固定在热沉307上（固定方式图中未给出），各接触面之间通过高导热率的硅脂或其他低热阻的方式紧密贴合。
在其他实施例中，冷却机构并不限于是帕尔帖元件（TEC）306，也可能是其他可控温的水冷机构、热交换器和风扇组合、制冷剂等。
标号308所示为热敏电阻、热电偶等感温器件的测温点，监测红激光器303的壳温。激光器通过恒流源供电，应用TEC的闭环控制电路能达到很高的控温精度，保证激光器壳温的稳定。在供电电流及壳温都保持稳定的前提下，激光器输出稳定的光功率。
模组外壳301、外壳盖板302、热沉307与出光透镜310共同组成壳体，围合成一个封闭的容置腔体311，满足防尘的需要。但是通常的密封结构并不能隔绝水汽，因此腔体内的湿度会随着环境湿度的升高而升高。
本实施例一增加了参数检测机构，该参数检测机构包括温度传感器和湿度传感器，该温度传感器和湿度传感器可以分别独立设置，也可能是集成为一体。
激光器、冷却机构和参数检测机构分别与控制电路连接，所述控制电路根据参数检测机构采集的温度和湿度信号，确定可防止激光器水汽凝结的工作壳温，并根据输入电流、工作壳温和激光器输出光功率的函数关系，保证激光器输出光功率大致稳定下，计算出当前工作壳温对应的输入电流，并以此输入电流调节激光器。
请参考图1，本实施例中温度传感器和湿度传感器集成为一个温湿度传感器312。该温湿度传感器312定义为第一参数检测机构，其设置在容置腔体311的外部，用以采集外部环境的温度和湿度。从而实现随着环境温度的升高，同步提高激光器的工作壳温。
本温度控制方法包括：
外部数据采集：采集半导体激光器外部环境的温度Ta和湿度Ha。
计算露点温度：根据采集的温度Ta和湿度Ha计算出环境露点温度Tra。
具体地计算过程是，通过Tra与Ta、Ha的函数关系Tra=f1(Ta,Ha)，求得当前温度Ta和湿度Ha对应的环境露点温度Tra，该函数关系Tra=f1(Ta,Ha)属于已知现有技术，这里就不再赘言。
温度设置：根据环境露点温度Tra确定激光器的工作壳温T_set，所述工作壳温T_set高于或等于环境露点温度Tra；并将冷却机构的控温点T_cold设置为与工作壳温T_set相等。
该工作壳温T_set高于或等于环境露点温度Tra，可防止半导体激光器在外部环境中由于温差问题所造成的水汽凝结现象。
确定输入电流：根据输入电流I_in与工作壳温T_set和激光器输出光功率P_out的函数关系，保证激光器输出光功率P_out大致稳定，计算出当前工作壳温T_set对应的输入电流I_in。
这里所说的输出光功率P_out大致稳定是指输出光功率P_out保持在一定取值范围内，这个取值范围可以根据实际需求而人为设定。
不同的激光器具有各自的特性曲线，不同激光器中输入电流I_in与工作壳温T_set和激光器输出光功率P_out的函数关系I_in=f2 (P_out, T_set)有所区别，该函数关系I_in=f2 (P_out, T_set)可以由其特性曲线或者激光器的试验数据通过插值、曲线拟合或其他方法可得到，这已属于已知的现有技术。
例如，请参看图3和4，图3和4为一种红激光器的特性曲线图，其中，图4中Tc=25℃和Tc=35℃的曲线基本重合，因此只画出了一条曲线，即供电电压只与电流相关，与壳温无关。从图3中可以看出，25℃-35℃壳温范围内，2W以下输出光功率的特性曲线有很好的线性度。以1.8W输出光功率为例，25℃壳温的情况下， 单颗激光器的热耗3.625W;35℃壳温的情况下, 单颗激光器的热耗4.653W。
调整输入电流：按照计算出的输入电流I_in值向激光器输入对应的电流。
具体地，请参考图2，一种基于该温度控制方法的流程框图如下：
步骤S10：采集位于容置腔体以外的外部环境的温度和湿度。
步骤S12：根据步骤S10采集的温度和湿度计算出激光器的工作壳温T_set；
步骤S14：根据工作壳温T_set计算出激光器的输入电流I_in，，并按照计算出的值向激光器输入对应的电流；
步骤S16：在调整输入电流步骤完成后，间隔设定时间，重返外部数据采集步骤。间隔时间可以根据实际需求灵活设定。
进一步地，请继续参考图2，还包括温度设置步骤S15：
在温度设置步骤中，将冷却机构的控温点T_cold与本步骤确定的工作壳温T_set进行比较，如控温点T_cold=工作壳温T_set，则进入下一步骤；如控温点T_cold≠工作壳温T_set，则将控温点T_cold的值设置为工作壳温T_set的值，并进入下一步骤。
进一步地，在温度设置步骤中，如控温精度为+/-N℃，则工作壳温T_set确定为T_set=Tra+N℃，N为正实数。
本实施例通过监控环境温湿度的变化，实时调节激光器的工作壳温及供电电流，不仅可尽量降低激光器工作壳温，同时还可以防止水汽凝结并保证稳定的输出光功率。
例如，对于使用15颗如图3所示的红激光器的模组来说。现有技术的激光器壳温25℃恒温控制方案，TEC制冷量54W，其冷端温度20℃, 热端到环境热阻0.16℃ /W。环境温度25℃时,通过计算可知TEC功率32.6W，热端温度40℃，TEC冷热端温差20℃, 制冷效率COP达1.66。 然而当环境温度上升到35℃时， 计算可知此时TEC功率93.9W, 热端温度60℃, TEC冷热端温差40℃， 制冷效率COP下降为0.57.
而采用本实施例所示温度控制方法，当35℃环境温度时，激光器壳温也控制在35℃, 则此时TEC制冷量69.8W，通过计算可知TEC功率73.7W，热端温度60℃，冷端温度为30℃，TEC冷热端温差30℃，制冷效率COP为0.94，仍保持在较高水平。
实施例二：
请参考图5，本实施例二提供的半导体激光器的温度控制方法基于一种半导体激光器。该半导体激光器具有容置腔体311，容置腔体311内装有激光器303和用于对激光器控温的冷却机构306。
具体来说，图5所示为上述半导体激光器的一种具体示例，其相对实施例一所示例结构的区别在于，将温湿度传感器313定义为第二参数检测机构，其设置在容置腔体311内，并位于激光器303周围，用以采集容置腔体311内位于激光器303周围的空间的温度T_air。从而实现随着容置腔体311内温度的升高，同步提高激光器303的工作壳温。
该温度控制方法包括步骤：
腔体内温度采集：采集容置腔体311内位于激光器303周围的空间的温度T_air。
温度设置：根据采集的腔体311内温度T_air确定激光器303的工作壳温T_set，该工作壳温T_set等于或高于T_air，并将冷却机构306的控温点T_cold设置为等于T_air。
该工作壳温T_set高于或等于腔体311内温度T_air，可防止各部件在腔体311环境内由于温差问题所造成的水汽凝结现象。
确定输入电流：保证激光器303输出光功率P_out大致稳定，根据输入电流I_in与工作壳温T_set和激光器303输出光功率P_out的函数关系，计算出当前工作壳温T_set对应的输入电流I_in。
如实施例一所述，不同的激光器303具有各自的特性曲线，不同激光器303中输入电流I_in与工作壳温T_set和激光器输出光功率P_out的函数关系 有所区别，该函数关系 可以由起特性曲线或者激光器的试验数据通过插值、曲线拟合或其他方法可得到，这已属于已知的现有技术，这里就不再赘言。
腔体311内湿度采集：采集容置腔体311内位于激光器303周围的空间的湿度H_air。
温度调整：根据采集的湿度H_air确定工作壳温T_set，并调整控温点T_cold后，返回确定输入电流步骤。
在温度调整时，可预先设定腔体311内湿度的阈值上限和阈值下限，将采集的湿度H_air与阈值上限和阈值下限比较，根据比较结果调整或保持当前控温点T_cold以及工作壳温T_set的大小。
以下设第一步长为T_step，具体地，请参考图6，本温度控制方法包括：
步骤S20：采集容置腔体311内位于激光器303周围的空间的温度T_air；
步骤S22：根据步骤S20采集的温度T_air设定冷却机构的控制程序的控温点T_cold，该控温点T_cold的值设置为等于T_air的值；
步骤S24：根据控温点T_cold计算出激光器303的输入电流I_in，并按照计算出的值向激光器303输入对应的电流；
步骤S26：采集容置腔体311内位于激光器303周围的空间的湿度H_air，根据采集的湿度H_air调整控温点T_cold的大小，并返回步骤S24。
在步骤S26中，预先设定腔体311内湿度的阈值上限和阈值下限，将采集的湿度H_air与阈值上限和阈值下限比较，根据比较结果调整或保持当前控温点T_cold的数值。
可以是当湿度H_air＜阈值下限，则设置新控温点T_cold=当前控温点T_cold-T_step，新的工作壳温T_set=新控温点T_cold，并返回输入电流步骤，根据新工作壳温T_set计算出输入电流I_in；当湿度H_air＞阈值上限，则设置新控温点T_cold=当前控温点T_cold+T_step，新的工作壳温T_set=新控温点T_cold，并返回输入电流步骤，根据新工作壳温T_set计算出输入电流I_in；当阈值下限＜湿度H_air＜阈值上限，则返回输入电流步骤；其中，T_step表示温度调节的步长。
其中，T_step的取值有两种方式：1、取定值，步长要小，例如1℃到2℃之间都比较合适； 2：根据腔体311内湿度变化，湿度小时，步长可以取大一些，湿度高时，步长取小值，即步长T_step的值随着湿度的升高而减小。
阈值上下限一般在产品要求正常运行的湿度范围之内取值。譬如产品要求的湿度范围是5% - 95%，则阈值上下限可取此范围内的任何值；当阈值上下限取值接近时，譬如70%-73%， 还能实现近似的恒湿控制。
本实施例二具体来说，在模块上电后， 将腔体311内温度作为TEC的初始控温点，也就是激光器303的工作壳温。然后根据腔体311内湿度来调整TEC控温点: 湿度小于阈值下限则可进一步降低激光器303工作壳温，也不会导致水汽凝结；若湿度高于阈值上限则需提高激光器303的工作壳温， 以防止水汽凝结。 若湿度介于阈值上下限之间， 则激光器303工作壳温不做调整。激光器303的输入电流根据其工作壳温调节以保证稳定的输出光功率。
本实施例通过监控腔体311内温湿度的变化，实时调节激光器303的工作壳温及供电电流，不仅可尽量降低激光器303工作壳温，同时还可以防止水汽凝结并保证稳定的输出光功率。
实施例三
本实施例三提供另一种半导体激光器的温度控制方法，该温度控制方法采用了实施例一和实施例二的结合。
该温度控制方法包括第一温度控制模式和第二温度控制模式，第一温度控制模式和第二温度控制模式之间可进行选择切换。
其中，第一温度控制模式即为实施例一所示温度控制方法，第二温度控制模式则采用的是实施例二所示的温度控制方法。第一温度控制模式主要用于对应用环境的温湿度来确定激光器的工作壳温，在一般情况下环境温湿度的变化比较缓慢，该方法可正常使用。但在某些情况下， 譬如设备做温湿度循环测试的时候， 环境温湿度变化较快。 环境湿度降低时，容置腔体内的湿度仍然较高， 此时环境露点Tra低于腔体内露点Trc， 按照Tra来控制激光器壳温，会导致结露现象发生。
因此，当容置腔体内的温度和/或湿度相比半导体激光器外部环境的温度和/或湿度高，且高出的差值等于或大于设定差值（设定差值可根据实际需求而灵活人为设定），此时环境露点Tra低于腔体内露点Trc，则由第一温度控制模式切换到第二温度控制模式。反之，则由第二温度控制模式切换到第一温度控制模式。
第二温度控制模式采用腔体内温度Tac和腔体内湿度Hac, 实时调节激光器的工作壳温及供电电流，不仅可尽量降低激光器工作壳温，同时还可以防止腔体内水汽凝结并保证稳定的输出光功率。
实施例四
本实施例四提供一种半导体激光器，其包括壳体、激光器、冷却机构、参数检测机构以及控制电路。
该壳体围合形成容置腔体，其可能是一个独立起到壳体作用的部件，也可能是由多个部件组合形成，如实施例一所示。
该激光器安装在容置腔体内，冷却机构对激光器进行冷却控温。参数检测机构包括温度传感器和湿度传感器，在壳体的外部和/或容置腔体内设有参数检测机构，用以检测壳体外部和/或容置腔体内的温度和湿度。
激光器、冷却机构和参数检测机构分别与控制电路连接，控制电路根据参数检测机构采集的温度和湿度信号，确定可防止激光器水汽凝结的工作壳温，并根据输入电流、工作壳温和激光器输出光功率的函数关系，保证激光器输出光功率大致稳定下，计算出当前工作壳温对应的输入电流，并以此输入电流调节激光器。
进一步地，设置在壳体外部的参数检测机构为第一参数检测机构，控制电路根据第一参数检测机构采集的温度和湿度确定环境露点温度，并将激光器的工作壳温和冷却机构的控温点设置为相等且高于或等于环境露点温度。具体的控制过程可参考实施例一所述。
进一步地，设置在容置腔体内的参数检测机构为第二参数检测机构，控制电路将第二参数检测机构采集的温度作为激光器的初始工作壳温和冷却机构的控温点，并根据第二参数检测机构采集的湿度调整工作壳温和控温点。具体的控制过程可参考实施例二所述。
其中，可以预先设定腔体内湿度的阈值上限和阈值下限，当湿度＜阈值下限，则设置新控温点=当前控温点-T_step，新的工作壳温=新控温点，并重新确定输入电流；当湿度＞阈值上限，则设置新控温点=当前控温点+T_step，新的工作壳温=新控温点，并重新确定输入电流；当阈值下限＜湿度＜阈值上限，则保持当前输入电流；其中，T_step表示温度调节的步长。具体的控制过程可参考实施例二所述。
以上内容是结合具体的实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换。

Claims (14)

1. 一种半导体激光器的温度控制方法,其特征在于，所述半导体激光器具有容置腔体，所述容置腔体内装有激光器和用于对激光器进行冷却的冷却机构；
所述温度控制方法包括第一温度控制模式，所述第一温度控制模式包括步骤：
外部数据采集：采集半导体激光器外部环境的温度和湿度；
计算露点温度：根据采集的温度和湿度计算出环境露点温度；
温度设置：根据环境露点温度确定激光器的工作壳温，所述工作壳温高于或等于环境露点温度；并将冷却机构的控温点设置为与工作壳温相等；
确定输入电流：根据输入电流与工作壳温和激光器输出光功率的函数关系，保证激光器输出光功率大致稳定，计算出当前工作壳温对应的输入电流；
调整输入电流：按照计算出的输入电流值向激光器输入对应的电流。
2. 如权利要求1所述的温度控制方法，其特征在于，在温度设置步骤中，将冷却机构的控温点与本步骤确定的工作壳温进行比较，如控温点=工作壳温，则进入下一步骤；如控温点≠工作壳温，则将控温点的值设置为工作壳温的值，并进入下一步骤。
3. 如权利要求1所述的温度控制方法，其特征在于，在调整输入电流步骤完成后，间隔设定时间，重返外部数据采集步骤。
4. 如权利要求1-3任一项所述的温度控制方法，其特征在于，所述温度控制方法还包括第二温度控制模式，所述第一温度控制模式和第二温度控制模式之间可进行选择切换；所述第二温度控制模式包括步骤：
腔体内温度采集：采集容置腔体内位于激光器周围的空间的温度；
温度设置：根据采集的腔体内温度确定激光器的工作壳温，所述工作壳温等于或高于所述腔体内温度，并将冷却机构控温点设置为等于所述腔体内温度；
确定输入电流：根据输入电流与工作壳温和激光器输出光功率的函数关系，保证激光器输出光功率大致稳定，计算出当前工作壳温对应的输入电流；
腔体内湿度采集：采集容置腔体内位于激光器周围的空间的湿度；
温度调整：根据采集的腔体内湿度确定工作壳温，并调整控温点后，返回确定输入电流步骤。
5. 如权利要求4所述的温度控制方法，其特征在于，在温度调整中，预先设定腔体内湿度的阈值上限和阈值下限，当腔体内湿度＜阈值下限，则设置新控温点=当前控温点-第一步长，新的工作壳温=新控温点，并返回输入电流步骤，根据新工作壳温计算出输入电流；当腔体内湿度＞阈值上限，则设置新控温点=当前控温点+第一步长，新的工作壳温=新控温点，并返回输入电流步骤，根据新工作壳温计算出输入电流；当阈值下限＜腔体内湿度＜阈值上限，则返回输入电流步骤；其中，第一步长表示温度调节的步长。
6. 如权利要求5所述的温度控制方法，其特征在于，所述第一步长的值随着湿度的升高而减小。
7. 如权利要求4所述的温度控制方法，其特征在于，当容置腔体内的温度和/或湿度相比半导体激光器外部环境的温度和/或湿度高，且高出的差值等于或大于设定差值，则由第一温度控制模式切换到第二温度控制模式。
8. 一种半导体激光器的温度控制方法，其特征在于，所述半导体激光器具有容置腔体，所述容置腔体内装有激光器和用于对激光器进行冷却的冷却机构；
所述温度控制方法包括步骤：
腔体内温度采集：采集容置腔体内位于激光器周围的空间的温度；
温度设置：根据采集的腔体内温度确定激光器的工作壳温，所述工作壳温等于或高于腔体内温度，并将冷却机构的控温点设置为等于腔体内温度；
确定输入电流：根据输入电流与工作壳温和激光器输出光功率的函数关系，保证激光器输出光功率大致稳定，计算出当前工作壳温对应的输入电流；
腔体内湿度采集：采集容置腔体内位于激光器周围的空间的湿度；
温度调整：根据采集的湿度确定工作壳温，并调整控温点后，返回确定输入电流步骤。
9. 如权利要求8所述的温度控制方法，其特征在于，在温度调整中，预先设定腔体内湿度的阈值上限和阈值下限，当腔体内湿度＜阈值下限，则设置新控温点=当前控温点-第一步长，新的工作壳温=新控温点，并返回输入电流步骤，根据新工作壳温计算出输入电流；当腔体内湿度＞阈值上限，则设置新控温点=当前控温点+第一步长，新的工作壳温=新控温点，并返回输入电流步骤，根据新工作壳温计算出输入电流；当阈值下限＜腔体内湿度＜阈值上限，则返回输入电流步骤；其中，第一步长表示温度调节的步长。
10. 如权利要求9所述的温度控制方法，其特征在于，所述第一步长的值随着湿度的升高而减小。
11. 一种半导体激光器，其特征在于，包括：
壳体，所述壳体围合形成容置腔体；
激光器，所述激光器安装在容置腔体内；
冷却机构，所述冷却机构对激光器进行冷却控温；
参数检测机构，所述参数检测机构包括温度传感器和湿度传感器，在所述壳体的外部和/或容置腔体内设有所述参数检测机构；
以及控制电路，所述激光器、冷却机构和参数检测机构分别与控制电路连接，所述控制电路根据参数检测机构采集的温度和湿度信号，确定可防止激光器水汽凝结的工作壳温，并根据输入电流、工作壳温和激光器输出光功率的函数关系，保证激光器输出光功率大致稳定下，计算出当前工作壳温对应的输入电流，并以此输入电流调节激光器。
12. 如权利要求11所述的半导体激光器，其特征在于，设置在壳体外部的参数检测机构为第一参数检测机构，所述控制电路根据第一参数检测机构采集的温度和湿度确定环境露点温度，并将激光器的工作壳温和冷却机构的控温点设置为相等且高于或等于环境露点温度。
13. 如权利要求11所述的半导体激光器，其特征在于，设置在容置腔体内的参数检测机构为第二参数检测机构，所述控制电路将第二参数检测机构采集的温度作为激光器的初始工作壳温和冷却机构的控温点，并根据第二参数检测机构采集的湿度调整工作壳温和控温点。
14. 如权利要求13所述的半导体激光器，其特征在于，预先设定腔体内湿度的阈值上限和阈值下限，当湿度＜阈值下限，则设置新控温点=当前控温点-第一步长，新的工作壳温=新控温点，并重新确定输入电流；当腔体内湿度＞阈值上限，则设置新控温点=当前控温点+第一步长，新的工作壳温=新控温点，并重新确定输入电流；当阈值下限＜湿度＜阈值上限，则保持当前输入电流；其中，第一步长表示温度调节的步长。
PCT/CN2017/084839 2016-07-04 2017-05-18 半导体激光器及其温度控制方法 WO2018006657A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610517379.2A CN107579429B (zh) 2016-07-04 2016-07-04 半导体激光器及其温度控制方法
CN201610517379.2 2016-07-04

Publications (1)

Publication Number Publication Date
WO2018006657A1 true WO2018006657A1 (zh) 2018-01-11

Family

ID=60901382

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/084839 WO2018006657A1 (zh) 2016-07-04 2017-05-18 半导体激光器及其温度控制方法

Country Status (2)

Country Link
CN (1) CN107579429B (zh)
WO (1) WO2018006657A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114484968A (zh) * 2020-10-23 2022-05-13 海信（山东）冰箱有限公司 冰箱及其控制方法
CN117129459A (zh) * 2023-10-26 2023-11-28 天津创盾智能科技有限公司 一种激光诱导荧光检测气溶胶的方法及系统

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109604261A (zh) * 2018-12-10 2019-04-12 雷斯罗普(北京)激光科技有限公司 一种激光清洗装置防结露闭环控制系统
CN109557873B (zh) * 2018-12-10 2020-10-20 雷斯罗普(北京)激光科技有限公司 一种激光清洗机控制系统
JP7228809B2 (ja) * 2019-04-16 2023-02-27 パナソニックＩｐマネジメント株式会社 レーザ装置及びそれを用いたレーザ加工装置
JP7228810B2 (ja) * 2019-04-16 2023-02-27 パナソニックＩｐマネジメント株式会社 レーザ装置及びそれを用いたレーザ加工装置
CN110146546B (zh) * 2019-06-17 2022-01-18 深圳市一量检测有限公司 一种冷镜式露点仪自动光电检测系统
CN111462707B (zh) * 2020-04-27 2021-08-03 北京航空航天大学 一种基于建模补偿的液晶稳功率系统温漂抑制方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326410A (ja) * 2000-05-16 2001-11-22 Ishikawajima Harima Heavy Ind Co Ltd 半導体レーザ冷却装置
CN102315586A (zh) * 2010-06-29 2012-01-11 深圳市雷迈科技有限公司 带有多种检测传感器和保护装置的半导体激光器模块
JP2012024778A (ja) * 2010-07-20 2012-02-09 Amada Co Ltd ファイバレーザ発振器及びファイバレーザ加工機
CN103455064A (zh) * 2013-08-09 2013-12-18 徐州中欧科技有限公司 激光器输出口的防结露保护系统及方法
CN104083211A (zh) * 2014-07-17 2014-10-08 山东杰美医疗科技有限公司 一种半导体激光脱毛仪中半导体激光器的保护方法
CN104615054A (zh) * 2015-01-22 2015-05-13 北京奥普维尔科技有限公司 一种激光器的功率恒定系统及方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000040850A (ja) * 1998-07-24 2000-02-08 Dainippon Screen Mfg Co Ltd レーザダイオードの駆動制御装置
JP3775397B2 (ja) * 2003-03-27 2006-05-17 住友電気工業株式会社 光送信モジュール
JP2010085676A (ja) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd プロジェクタ装置
CN102791121A (zh) * 2010-04-09 2012-11-21 夏普株式会社 照明装置、植物栽培装置、以及照明装置的冷却方法
JP5206814B2 (ja) * 2011-02-02 2013-06-12 カシオ計算機株式会社 冷却装置、冷却制御方法及びプログラム
JP6120496B2 (ja) * 2012-06-15 2017-04-26 三菱電機株式会社 光源装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326410A (ja) * 2000-05-16 2001-11-22 Ishikawajima Harima Heavy Ind Co Ltd 半導体レーザ冷却装置
CN102315586A (zh) * 2010-06-29 2012-01-11 深圳市雷迈科技有限公司 带有多种检测传感器和保护装置的半导体激光器模块
JP2012024778A (ja) * 2010-07-20 2012-02-09 Amada Co Ltd ファイバレーザ発振器及びファイバレーザ加工機
CN103455064A (zh) * 2013-08-09 2013-12-18 徐州中欧科技有限公司 激光器输出口的防结露保护系统及方法
CN104083211A (zh) * 2014-07-17 2014-10-08 山东杰美医疗科技有限公司 一种半导体激光脱毛仪中半导体激光器的保护方法
CN104615054A (zh) * 2015-01-22 2015-05-13 北京奥普维尔科技有限公司 一种激光器的功率恒定系统及方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114484968A (zh) * 2020-10-23 2022-05-13 海信（山东）冰箱有限公司 冰箱及其控制方法
CN114484968B (zh) * 2020-10-23 2024-06-04 海信冰箱有限公司 冰箱及其控制方法
CN117129459A (zh) * 2023-10-26 2023-11-28 天津创盾智能科技有限公司 一种激光诱导荧光检测气溶胶的方法及系统
CN117129459B (zh) * 2023-10-26 2023-12-26 天津创盾智能科技有限公司 一种激光诱导荧光检测气溶胶的方法及系统

Also Published As

Publication number Publication date
CN107579429A (zh) 2018-01-12
CN107579429B (zh) 2020-12-04

Similar Documents

Publication Publication Date Title
WO2018006657A1 (zh) 半导体激光器及其温度控制方法
WO2018000753A1 (zh) 电池温度的控制方法及系统
WO2013060038A1 (zh) Led背光驱动电路以及显示装置
WO2013015610A2 (en) Electronic temperature control apparatus, cooler using the same, heater using the same, and control method thereof
WO2013037155A1 (zh) 补偿led背光导通压降差异的电路及液晶显示器
WO2014190513A1 (zh) 可防止充电电源反接的充电电路及方法
CN103975645A (zh) 一种安全电热电路、安全电热方法及电热取暖器
CN104679089B (zh) 用于集成led驱动芯片的梯级过温补偿保护系统及电路
WO2016045559A1 (zh) 一种支持冗余备份及热插拔的供电系统
JPH0218857A (ja) 蛍光ランプ装置
WO2016202061A1 (zh) 一种可降低灯芯数量的线性恒流led驱动装置
WO2004011861A1 (en) Thermoelectric cooler drive control
KR20050016677A (ko) 반도체 디바이스 보호 방법 및 이것을 이용한 반도체디바이스 보호장치
WO2014208999A1 (ko) 발광 디바이스의 구동 회로 및 구동 방법, 그리고 상기 구동 회로를 채용한 반도체 칩
WO2003083537A1 (fr) Regulateur de temperature et multiplexeur/demultiplexeur en longueur d'onde optique de type a reseaux de guides d'ondes
CN205657891U (zh) 温度检测模块及具有温度控制功能的驱动电源系统
WO2018152901A1 (zh) 一种电源电路及液晶显示器
CN208272348U (zh) 大功率固体激光器的光学机舱环境监测装置
WO2016037347A1 (zh) 显示面板测试装置及方法
FI96262B (fi) Järjestely elektronisten komponenttien lämpötilan säätämiseksi
WO2018117307A1 (ko) 지열을 이용하는 히트펌프 시스템의 생산 열량과 효율의 계산 방법
WO2022010112A1 (ko) 펠티어 소자를 구비한 냉장고의 제어방법 및 이를 사용하는 냉장고
CN105873282B (zh) 具有温度控制功能的驱动电源系统及其温度控制方法
WO2022019512A1 (ko) 디스플레이장치 및 그 제어방법
WO2022035154A1 (ko) 온도 측정 시스템에서 온도 측정을 보조하는 장치 및 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17823469

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17823469

Country of ref document: EP

Kind code of ref document: A1