WO2018001883A1 - Module de puissance - Google Patents

Module de puissance Download PDF

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Publication number
WO2018001883A1
WO2018001883A1 PCT/EP2017/065511 EP2017065511W WO2018001883A1 WO 2018001883 A1 WO2018001883 A1 WO 2018001883A1 EP 2017065511 W EP2017065511 W EP 2017065511W WO 2018001883 A1 WO2018001883 A1 WO 2018001883A1
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WO
WIPO (PCT)
Prior art keywords
power module
injection
molded part
module according
power
Prior art date
Application number
PCT/EP2017/065511
Other languages
German (de)
English (en)
Inventor
Karl Weidner
Martin Schulz
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2018001883A1 publication Critical patent/WO2018001883A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2405—Shape
    • H01L2224/24051—Conformal with the semiconductor or solid-state device
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2499—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
    • H01L2224/24996—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/24998—Reinforcing structures, e.g. ramp-like support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • Power module The invention relates to a power module.
  • the packaging and packaging (AVT) of power components is an important area of active development.
  • Essential here are two technical challenges: On the one hand, the AVT needs good heat dissipation
  • the components must be connected as low inductively as possible to reduce switching overvoltages.
  • the flexibility of the electrical ⁇ rule interconnection of the components is very limited on the one hand. This limited flexibility forms a bottleneck for the ⁇ he targetable performance in particular always faster switching power components, such as wide-bandgap power semiconductors (WBG power semiconductors).
  • WBG power semiconductors wide-bandgap power semiconductors
  • WBG power semiconductors have (compared to
  • Silicon switches a much higher operating temperature.
  • the operating temperature of power modules is thus limited by the AVT and not by the cruhalbeiter upward. The potential of the power components is therefore not fully utilized.
  • DCB Direct Copper BondecT
  • bonding wires and / or long pins are required, which regularly cause high parasitic inductances and thus high switching overvoltages.
  • the high inductances are problematic: Therefore, the operating voltage of a 1200 V SiC chip is reduced to about 800 V, although higher voltages in the DC bus are desired.
  • the power module should be able to be operated efficiently and be sufficiently heatable.
  • the power module according to the invention should preferably be cost-effective and reliable.
  • the power module according to the invention is provided with at least one
  • Component carrier and formed with at least a first electrical component.
  • Component carrier and component are injection molded together forming an injection molded part.
  • the component support may be a ⁇ either cast as a separate insert in the injection-molded part or a glove.
  • the at least one component carrier can itself be injection molded or at least be injection molded ⁇ part as part of the injection ⁇ . Both aforementioned cases should be included under the phrase "component carrier and component are injection molded together" equally.
  • the electrical interconnection can be designed according to the invention much more flexible than previously known. Accordingly, commutation inductances can be minimized. This results in low switching overvoltages and consequently better utilization of the power components. Switching power losses can be reduced accordingly, so that a higher effi ⁇ ciency is achieved.
  • the electrical component or the Kom ⁇ components one or more of the following compo ⁇ components: power device, lead frame, substrate insbesonde ⁇ re DCB and / or PCB substrate and / or formed with a ceramic material and / or organic material substrate.
  • the components carrier can include a wide choice of substrates from ⁇ : Thus as substrates both inorganic and organic substrates be present.
  • the power module according to the invention is designed very robust.
  • the injection-molded part encapsulates the at least one component at least partially or in some areas tightly, preferably in a fluid-tight manner, in or out. In this way, the power module according to the invention is hardly susceptible to external influences and in particular designed for outdoor use.
  • Be the power module according to the invention can with fructzuverlässi ⁇ gem and highly insulating (particularly with a dielectric strength of more than 150 kV / mm), preferably with a high temperature resistant, insulating material, in particular tempe ⁇ raturfest to temperatures of more than 200 ° C, provided by the Injection molded part is formed with such Isolati ⁇ onsmaterial.
  • one or more other of the following components are injection molded with the injection-molded part, in addition: power device, lead frame, substrate, in particular DCB and / or PCB substrate and / or with ceramic j ⁇ -magnetic material and / or organic material formed Sub ⁇ strate.
  • power device lead frame, substrate, in particular DCB and / or PCB substrate and / or with ceramic j ⁇ -magnetic material and / or organic material formed Sub ⁇ strate.
  • the assembly and connection technology can be mechanically fixed and all free spaces with the injection molding material bubble-free with, in particular naval assistance, gas in one step on ⁇ fill.
  • the material thus replaces the silicone gel and performs its tasks, ie protection against contamination and high creep resistance.
  • the injection molded part forms a housing, in particular an enclosure, of the power module.
  • the design of the housing design according to the invention can be adapted very flexibly to the required requirements.
  • Particularly advantageous components in particular power components, can be arranged in multi-layered planes.
  • the inventively possible flexible structure thus allows a particularly cost-effective multilayer structure.
  • At least one area of at least the first component preferably does not adjoin the injection-molded part.
  • at least one conductor track is arranged, in particular applied or coated , in this area.
  • the molded part can be designed such that contact areas are saved off during injection molding on the substrate and / or to power ⁇ components and / or other components and in a second step over deposited copper can be interconnected with one another or are interconnected.
  • recessed by the injection molded part Kon ⁇ tact areas are contacted by contacts, in particular by means of spring contacts.
  • the injection molded part forms a multi-layered component carrier or the power module has a multi-layered component carrier.
  • the power module preferably has a plurality of injection-molded parts, which cooperatively form a multi-layered component carrier.
  • multi-layered substrates are present in the power module according to the invention.
  • Injection molded part has a sufficiently high thermal conductivity.
  • a limitation to a certain power class of the power module is not required due to the sufficient heat dissipation.
  • this is injection-molded at least with a material which has a thermal conductivity which is higher than the thermal conductivity of silicone.
  • the thermal conductivity is at least three times, preferably at least ten times and ideally ⁇ at least thirty times that of silicone. Be particularly ⁇ vorzugt the molded part is formed with a heat-conducting plastic.
  • the thermally conductive plastic is appropriate as on known to be formed by fillers, which impart heat-conducting properties of the overall composite of plastic and fillers due to their heat-conducting properties. As fillers, ceramic and / or metallic and / or organic fillers may be present.
  • power components of the power module can also be cooled very efficiently by means of the injection-molding material.
  • This allows ei ⁇ ne high power density and a high power volume. Consequently, an efficient operation of the power module and thus a high utilization of novel power devices, in particular WBG devices, such as GaN and / or SiC formed WBG devices is possible.
  • the molded part cooling channels for a cooling fluid in the power module according to the OF INVENTION ⁇ dung can be particularly simple forms excluded because they can be easily injected in injection molding.
  • cooling fins are easily realized as cooling channels.
  • the power module according to the invention can thus be manufactured extremely inexpensively.
  • Dinze ⁇ larly can be dispensed with a complex water cooling.
  • the cooling can be done by convection cooling alone.
  • a conventional power module in Drahtbondtech ⁇ nology schematically in cross section Show it: a conventional power module in Drahtbondtech ⁇ nology schematically in cross section, a conventional power module with conventional planar interconnect technology schematically in cross section, a power module according to the invention in Drahtbond ⁇ technology schematically in cross section, part of another inventive Lei ⁇ tion module with planar connection technology schematically in cross section, the power module gem.
  • Fig. 4 in schematically in a perspective view and a development of the power module acc.
  • Fig. 5 in a perspective view.
  • the power module 5 shown in FIG. 1 corresponds to the prior art and comprises a base plate 10, which forms a component carrier. From the bottom plate 10, housing walls 20 extend away, which cooperatively form with the Bo ⁇ denplatte 10 a housing.
  • an insulating layer 30 is applied to the bottom plate 10, which has flat copper cladding 40. Ferkaschtechniken on the copper 40 are remote from their, the insulating power semiconductor disposed flat sides 50, which are connected elekt ⁇ driven in known manner by means of bonding wires 60 to connector pins 70 as well as to a power terminal 80th
  • the connector pins 70 and the Leis ⁇ line connection 80 are also on the insulating layer 30 facing away from the flat sides of the copper cladding 40.
  • the insulating layer 30 with the copper liners 40 and the power semiconductors 50 as well as the bonding wires 60 and the connection pins 70 and the power connection 80 is filled with silicone 90 in a manner known per se in the region between the housing walls 20.
  • the conventional power module 100 shown in FIG. 2 likewise comprises a bottom plate 10 with housing walls 20, an insulating layer 30 with copper laminations 40 and power semiconductors 50 and connection pins 70 applied thereto.
  • a structured insulation 110 deposited In contrast to the power module 5 described above with reference to FIG Power module 100 acc. Fig. 2 to the copper cladding 40 and power components 50 a structured insulation 110 deposited.
  • the insulation 110 is a few 100 microns thick. Structures the insulation 110 is such that the insulation 110 tomaschineflä ⁇ chen Schemeen of copper cladding 40 and the power components is recessed 50th
  • the insulation 110 as well as the recessed contact surface areas are in turn each covered with a thin copper layer 120.
  • the laminated copper layer 120 is - like the copper cladding 40 - applied in a conventional manner, for example by means of an additive process.
  • the aforementioned components of the power module 100 are as in the power module. Fig. 1 encapsulated by the side walls 20 with silicone 90 shed.
  • the power module 200 includes as previously described with reference to FIG. 1 Leis ⁇ processing module 5, a bottom plate 10, an insulating layer 30 disposed on the insulating layer 30 copper cladding 40 so- as power components 50, bonding wires 60 and connection pins 70 on.
  • the On ⁇ Psychisols 70 but not approximations only at Kupferkaschie- arranged 40, but the connection pins 70 but rather in each case form a connecting web of each of two sheet-like area and in their extension directions
  • Parallel flat contacts extending parallel to one another, in which one of the flat contacts of the copper cladding 40 rests on the insulating layer 30 over the whole area and is contacted by means of bonding wires 60.
  • the remaining flat contact 205 extends by means of the connecting web of the bottom plate 10 and extends with its planar extension directions parallel to the surface of the insulating layer 30. This remaining flat contact 205 is used for external electrical contacting of the power module 200.
  • Flat contacts and connecting ⁇ web are together one-piece copper bars 210.
  • each of the insulating layer 30 distant flat contacts 205, and each the power components distant flat contacts 205 of the copper bars 210 are arranged with their planar extension directions of respective regions, in the Common ⁇ men planes 220, 230th
  • the housing of the power module 200 according to the invention is now formed in such a way that the free space extending between the base plate 10 and the levels 220, 230 is completely filled by means of injection molding, in the exemplary embodiment shown.
  • the thus formed injection molded part 250 thus forms a Ge ⁇ housing of the power module 200, which terminates flush on its outer side with the bottom plate 10 remote flat contacts 205 of the copper bars 210.
  • the housing is thus formed with ⁇ means of an injection molded part 250, in which the remaining gen functional components of the power module 200 are embedded bet ⁇ .
  • the injection-molded part 250 is formed with a thermally conductive plastic, which obtains its heat-conducting properties due to introduced heat-conducting fillers.
  • ceramic fillers (not specifically shown in the figures) are brought into the plastic ⁇ .
  • the plastic is mixed alternatively or additionally with metallic and / or organic fillers.
  • an insulating ⁇ layer as in the above-described performance processing modules 5, 100, 200 a bottom plate 10, 30, 40 and disposed thereon power semiconductors 50 and to terminal pins 70 is provided with a copper cladding. Similar to the power module shown in FIG.
  • Fig. 4 to the copper cladding 40 and power components 50 - apart from on each of the bottom plate 10 give ⁇ applied contact surface areas - a structured insulation 110 deposited.
  • the laminated copper layer 320 is positioned ⁇ introduced in manner known per se, for example by means of an additive method.
  • the housing of the power module 300 according to the invention is formed in such a way that the free space extending between the base plate 10 and the flat plate 205 remote from the base plate 10
  • Injection molding at least partially, preferably completely, ge ⁇ fills.
  • the housing is thus formed by means of an injection molding ⁇ part 250, in which the remaining functional components of the power module 300 are embedded.
  • the injection molded part 250 as described with reference to FIG. 3 beschrie ⁇ ben inside of a heat conducting plastic.
  • the injection molded part 250 has, as shown in FIG. 5, cooling fins 380 for cooling the power module 300, which are oriented perpendicular to the base plate 10 in the manner of this. While the injection molded part 250 is formed inside with the heat-conducting plastic, a weather-resistant cover layer 385 is externally additionally molded onto the heat-conducting plastic. The weather-continuous top layer 385 serves only to further Longer side ⁇ delay the lifetime of the power module 300 for outdoor use and is inventively generally dispensable in other embodiments. In addition, as shown in FIG. 6, the injection-molded part 250 can be provided with recesses 400 into which a cooling-fluid line in the manner of a cooling coil can be inserted.
  • the cooling fins 390 are not formed, in contrast to the previously-described ⁇ NEN embodiment, as part of the injection-molded part 250th Rather, the cooling fins are gem.
  • Fig. 6 on both sides of the bottom plate 10 expediently separately formed in each case to own fin connection parts 410, 420.
  • the cooling fins 390 extend perpendicularly and are arranged at right angles to one another.
  • the fin connection parts 410, 420 together with a formed by means of the injection molded part 250

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)

Abstract

Module de puissance comprenant au moins un substrat et au moins un premier composant électrique. Le substrat et les composants sont assemblés par moulage par injection, de manière à former un élément moulé par injection.
PCT/EP2017/065511 2016-06-27 2017-06-23 Module de puissance WO2018001883A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016211479.4 2016-06-27
DE102016211479.4A DE102016211479A1 (de) 2016-06-27 2016-06-27 Leistungsmodul

Publications (1)

Publication Number Publication Date
WO2018001883A1 true WO2018001883A1 (fr) 2018-01-04

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