WO2018001883A1 - Power module - Google Patents

Power module Download PDF

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Publication number
WO2018001883A1
WO2018001883A1 PCT/EP2017/065511 EP2017065511W WO2018001883A1 WO 2018001883 A1 WO2018001883 A1 WO 2018001883A1 EP 2017065511 W EP2017065511 W EP 2017065511W WO 2018001883 A1 WO2018001883 A1 WO 2018001883A1
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WO
WIPO (PCT)
Prior art keywords
power module
injection
molded part
module according
power
Prior art date
Application number
PCT/EP2017/065511
Other languages
German (de)
French (fr)
Inventor
Karl Weidner
Martin Schulz
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2018001883A1 publication Critical patent/WO2018001883A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2405—Shape
    • H01L2224/24051—Conformal with the semiconductor or solid-state device
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2499—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
    • H01L2224/24996—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/24998—Reinforcing structures, e.g. ramp-like support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • Power module The invention relates to a power module.
  • the packaging and packaging (AVT) of power components is an important area of active development.
  • Essential here are two technical challenges: On the one hand, the AVT needs good heat dissipation
  • the components must be connected as low inductively as possible to reduce switching overvoltages.
  • the flexibility of the electrical ⁇ rule interconnection of the components is very limited on the one hand. This limited flexibility forms a bottleneck for the ⁇ he targetable performance in particular always faster switching power components, such as wide-bandgap power semiconductors (WBG power semiconductors).
  • WBG power semiconductors wide-bandgap power semiconductors
  • WBG power semiconductors have (compared to
  • Silicon switches a much higher operating temperature.
  • the operating temperature of power modules is thus limited by the AVT and not by the cruhalbeiter upward. The potential of the power components is therefore not fully utilized.
  • DCB Direct Copper BondecT
  • bonding wires and / or long pins are required, which regularly cause high parasitic inductances and thus high switching overvoltages.
  • the high inductances are problematic: Therefore, the operating voltage of a 1200 V SiC chip is reduced to about 800 V, although higher voltages in the DC bus are desired.
  • the power module should be able to be operated efficiently and be sufficiently heatable.
  • the power module according to the invention should preferably be cost-effective and reliable.
  • the power module according to the invention is provided with at least one
  • Component carrier and formed with at least a first electrical component.
  • Component carrier and component are injection molded together forming an injection molded part.
  • the component support may be a ⁇ either cast as a separate insert in the injection-molded part or a glove.
  • the at least one component carrier can itself be injection molded or at least be injection molded ⁇ part as part of the injection ⁇ . Both aforementioned cases should be included under the phrase "component carrier and component are injection molded together" equally.
  • the electrical interconnection can be designed according to the invention much more flexible than previously known. Accordingly, commutation inductances can be minimized. This results in low switching overvoltages and consequently better utilization of the power components. Switching power losses can be reduced accordingly, so that a higher effi ⁇ ciency is achieved.
  • the electrical component or the Kom ⁇ components one or more of the following compo ⁇ components: power device, lead frame, substrate insbesonde ⁇ re DCB and / or PCB substrate and / or formed with a ceramic material and / or organic material substrate.
  • the components carrier can include a wide choice of substrates from ⁇ : Thus as substrates both inorganic and organic substrates be present.
  • the power module according to the invention is designed very robust.
  • the injection-molded part encapsulates the at least one component at least partially or in some areas tightly, preferably in a fluid-tight manner, in or out. In this way, the power module according to the invention is hardly susceptible to external influences and in particular designed for outdoor use.
  • Be the power module according to the invention can with fructzuverlässi ⁇ gem and highly insulating (particularly with a dielectric strength of more than 150 kV / mm), preferably with a high temperature resistant, insulating material, in particular tempe ⁇ raturfest to temperatures of more than 200 ° C, provided by the Injection molded part is formed with such Isolati ⁇ onsmaterial.
  • one or more other of the following components are injection molded with the injection-molded part, in addition: power device, lead frame, substrate, in particular DCB and / or PCB substrate and / or with ceramic j ⁇ -magnetic material and / or organic material formed Sub ⁇ strate.
  • power device lead frame, substrate, in particular DCB and / or PCB substrate and / or with ceramic j ⁇ -magnetic material and / or organic material formed Sub ⁇ strate.
  • the assembly and connection technology can be mechanically fixed and all free spaces with the injection molding material bubble-free with, in particular naval assistance, gas in one step on ⁇ fill.
  • the material thus replaces the silicone gel and performs its tasks, ie protection against contamination and high creep resistance.
  • the injection molded part forms a housing, in particular an enclosure, of the power module.
  • the design of the housing design according to the invention can be adapted very flexibly to the required requirements.
  • Particularly advantageous components in particular power components, can be arranged in multi-layered planes.
  • the inventively possible flexible structure thus allows a particularly cost-effective multilayer structure.
  • At least one area of at least the first component preferably does not adjoin the injection-molded part.
  • at least one conductor track is arranged, in particular applied or coated , in this area.
  • the molded part can be designed such that contact areas are saved off during injection molding on the substrate and / or to power ⁇ components and / or other components and in a second step over deposited copper can be interconnected with one another or are interconnected.
  • recessed by the injection molded part Kon ⁇ tact areas are contacted by contacts, in particular by means of spring contacts.
  • the injection molded part forms a multi-layered component carrier or the power module has a multi-layered component carrier.
  • the power module preferably has a plurality of injection-molded parts, which cooperatively form a multi-layered component carrier.
  • multi-layered substrates are present in the power module according to the invention.
  • Injection molded part has a sufficiently high thermal conductivity.
  • a limitation to a certain power class of the power module is not required due to the sufficient heat dissipation.
  • this is injection-molded at least with a material which has a thermal conductivity which is higher than the thermal conductivity of silicone.
  • the thermal conductivity is at least three times, preferably at least ten times and ideally ⁇ at least thirty times that of silicone. Be particularly ⁇ vorzugt the molded part is formed with a heat-conducting plastic.
  • the thermally conductive plastic is appropriate as on known to be formed by fillers, which impart heat-conducting properties of the overall composite of plastic and fillers due to their heat-conducting properties. As fillers, ceramic and / or metallic and / or organic fillers may be present.
  • power components of the power module can also be cooled very efficiently by means of the injection-molding material.
  • This allows ei ⁇ ne high power density and a high power volume. Consequently, an efficient operation of the power module and thus a high utilization of novel power devices, in particular WBG devices, such as GaN and / or SiC formed WBG devices is possible.
  • the molded part cooling channels for a cooling fluid in the power module according to the OF INVENTION ⁇ dung can be particularly simple forms excluded because they can be easily injected in injection molding.
  • cooling fins are easily realized as cooling channels.
  • the power module according to the invention can thus be manufactured extremely inexpensively.
  • Dinze ⁇ larly can be dispensed with a complex water cooling.
  • the cooling can be done by convection cooling alone.
  • a conventional power module in Drahtbondtech ⁇ nology schematically in cross section Show it: a conventional power module in Drahtbondtech ⁇ nology schematically in cross section, a conventional power module with conventional planar interconnect technology schematically in cross section, a power module according to the invention in Drahtbond ⁇ technology schematically in cross section, part of another inventive Lei ⁇ tion module with planar connection technology schematically in cross section, the power module gem.
  • Fig. 4 in schematically in a perspective view and a development of the power module acc.
  • Fig. 5 in a perspective view.
  • the power module 5 shown in FIG. 1 corresponds to the prior art and comprises a base plate 10, which forms a component carrier. From the bottom plate 10, housing walls 20 extend away, which cooperatively form with the Bo ⁇ denplatte 10 a housing.
  • an insulating layer 30 is applied to the bottom plate 10, which has flat copper cladding 40. Ferkaschtechniken on the copper 40 are remote from their, the insulating power semiconductor disposed flat sides 50, which are connected elekt ⁇ driven in known manner by means of bonding wires 60 to connector pins 70 as well as to a power terminal 80th
  • the connector pins 70 and the Leis ⁇ line connection 80 are also on the insulating layer 30 facing away from the flat sides of the copper cladding 40.
  • the insulating layer 30 with the copper liners 40 and the power semiconductors 50 as well as the bonding wires 60 and the connection pins 70 and the power connection 80 is filled with silicone 90 in a manner known per se in the region between the housing walls 20.
  • the conventional power module 100 shown in FIG. 2 likewise comprises a bottom plate 10 with housing walls 20, an insulating layer 30 with copper laminations 40 and power semiconductors 50 and connection pins 70 applied thereto.
  • a structured insulation 110 deposited In contrast to the power module 5 described above with reference to FIG Power module 100 acc. Fig. 2 to the copper cladding 40 and power components 50 a structured insulation 110 deposited.
  • the insulation 110 is a few 100 microns thick. Structures the insulation 110 is such that the insulation 110 tomaschineflä ⁇ chen Schemeen of copper cladding 40 and the power components is recessed 50th
  • the insulation 110 as well as the recessed contact surface areas are in turn each covered with a thin copper layer 120.
  • the laminated copper layer 120 is - like the copper cladding 40 - applied in a conventional manner, for example by means of an additive process.
  • the aforementioned components of the power module 100 are as in the power module. Fig. 1 encapsulated by the side walls 20 with silicone 90 shed.
  • the power module 200 includes as previously described with reference to FIG. 1 Leis ⁇ processing module 5, a bottom plate 10, an insulating layer 30 disposed on the insulating layer 30 copper cladding 40 so- as power components 50, bonding wires 60 and connection pins 70 on.
  • the On ⁇ Psychisols 70 but not approximations only at Kupferkaschie- arranged 40, but the connection pins 70 but rather in each case form a connecting web of each of two sheet-like area and in their extension directions
  • Parallel flat contacts extending parallel to one another, in which one of the flat contacts of the copper cladding 40 rests on the insulating layer 30 over the whole area and is contacted by means of bonding wires 60.
  • the remaining flat contact 205 extends by means of the connecting web of the bottom plate 10 and extends with its planar extension directions parallel to the surface of the insulating layer 30. This remaining flat contact 205 is used for external electrical contacting of the power module 200.
  • Flat contacts and connecting ⁇ web are together one-piece copper bars 210.
  • each of the insulating layer 30 distant flat contacts 205, and each the power components distant flat contacts 205 of the copper bars 210 are arranged with their planar extension directions of respective regions, in the Common ⁇ men planes 220, 230th
  • the housing of the power module 200 according to the invention is now formed in such a way that the free space extending between the base plate 10 and the levels 220, 230 is completely filled by means of injection molding, in the exemplary embodiment shown.
  • the thus formed injection molded part 250 thus forms a Ge ⁇ housing of the power module 200, which terminates flush on its outer side with the bottom plate 10 remote flat contacts 205 of the copper bars 210.
  • the housing is thus formed with ⁇ means of an injection molded part 250, in which the remaining gen functional components of the power module 200 are embedded bet ⁇ .
  • the injection-molded part 250 is formed with a thermally conductive plastic, which obtains its heat-conducting properties due to introduced heat-conducting fillers.
  • ceramic fillers (not specifically shown in the figures) are brought into the plastic ⁇ .
  • the plastic is mixed alternatively or additionally with metallic and / or organic fillers.
  • an insulating ⁇ layer as in the above-described performance processing modules 5, 100, 200 a bottom plate 10, 30, 40 and disposed thereon power semiconductors 50 and to terminal pins 70 is provided with a copper cladding. Similar to the power module shown in FIG.
  • Fig. 4 to the copper cladding 40 and power components 50 - apart from on each of the bottom plate 10 give ⁇ applied contact surface areas - a structured insulation 110 deposited.
  • the laminated copper layer 320 is positioned ⁇ introduced in manner known per se, for example by means of an additive method.
  • the housing of the power module 300 according to the invention is formed in such a way that the free space extending between the base plate 10 and the flat plate 205 remote from the base plate 10
  • Injection molding at least partially, preferably completely, ge ⁇ fills.
  • the housing is thus formed by means of an injection molding ⁇ part 250, in which the remaining functional components of the power module 300 are embedded.
  • the injection molded part 250 as described with reference to FIG. 3 beschrie ⁇ ben inside of a heat conducting plastic.
  • the injection molded part 250 has, as shown in FIG. 5, cooling fins 380 for cooling the power module 300, which are oriented perpendicular to the base plate 10 in the manner of this. While the injection molded part 250 is formed inside with the heat-conducting plastic, a weather-resistant cover layer 385 is externally additionally molded onto the heat-conducting plastic. The weather-continuous top layer 385 serves only to further Longer side ⁇ delay the lifetime of the power module 300 for outdoor use and is inventively generally dispensable in other embodiments. In addition, as shown in FIG. 6, the injection-molded part 250 can be provided with recesses 400 into which a cooling-fluid line in the manner of a cooling coil can be inserted.
  • the cooling fins 390 are not formed, in contrast to the previously-described ⁇ NEN embodiment, as part of the injection-molded part 250th Rather, the cooling fins are gem.
  • Fig. 6 on both sides of the bottom plate 10 expediently separately formed in each case to own fin connection parts 410, 420.
  • the cooling fins 390 extend perpendicularly and are arranged at right angles to one another.
  • the fin connection parts 410, 420 together with a formed by means of the injection molded part 250

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A power module comprises at least a component carrier and at least one first electrical component. The component carrier and components are injection-molded together, forming an injection-molded part.

Description

Beschreibung description
Leistungsmodul Die Erfindung betrifft ein Leistungsmodul. Power module The invention relates to a power module.
Bei Leistungsmodulen bildet die Aufbau- und Verbindungstechnik (AVT) von Leistungsbauteilen ein wichtiges Gebiet aktiver Entwicklung. Wesentlich sind hier zwei technische Herausfor- derungen: Zum Einen muss die AVT eine gute Wärmeabfuhr zurIn power modules, the packaging and packaging (AVT) of power components is an important area of active development. Essential here are two technical challenges: On the one hand, the AVT needs good heat dissipation
Entwärmung der Leistungsbauteile gewährleisten und zum Anderen müssen die Bauteile zur Reduktion von Schaltüberspannungen möglichst niederinduktiv miteinander verbunden werden. Gegenwärtig ist aber zum einen die Flexibilität der elektri¬ schen Verschaltung der Bauelemente sehr eingeschränkt. Diese eingeschränkte Flexibilität bildet einen Engpass für die er¬ zielbare Leistung insbesondere immer schneller schaltender Leistungsbauteile, etwa von Wide-Bandgap-Leistungshalbleitern (WBG-Leistungshalbleitern) . Insbesondere sind die Schaltvorgänge nicht effizient und die Parallelschaltung von mehreren Chips begrenzt die Maximalleistung. To ensure heat dissipation of the power components and on the other hand, the components must be connected as low inductively as possible to reduce switching overvoltages. Currently, however, the flexibility of the electrical ¬ rule interconnection of the components is very limited on the one hand. This limited flexibility forms a bottleneck for the ¬ he targetable performance in particular always faster switching power components, such as wide-bandgap power semiconductors (WBG power semiconductors). In particular, the switching operations are not efficient and the parallel connection of several chips limits the maximum power.
Ferner ist die AVT gegenwärtig nicht hinreichend temperatur- stabil. WBG-Leistungshalbleiter weisen (verglichen mit Furthermore, AVT is currently not sufficiently temperature stable. WBG power semiconductors have (compared to
Siliziumschaltern) eine viele höhere Betriebstemperatur auf. Die Betriebstemperatur von Leistungsmodulen wird somit durch die AVT und nicht durch die Leistungshalbeiter nach oben begrenzt. Das Potential der Leistungsbauteile wird folglich nicht voll genutzt.  Silicon switches) a much higher operating temperature. The operating temperature of power modules is thus limited by the AVT and not by the Leistungshalbeiter upward. The potential of the power components is therefore not fully utilized.
Ein modularer Ansatz und eine breite Skalierbarkeit zur Er¬ reichung von z.B. hohen Stromdichten sind für Kundensysteme nicht verfügbar. WBG-Hochspannungsmodule Module mit Betriebs- Spannungen zwischen 3,3 kV und lOkV sind zudem noch nicht hinreichend isolationsfest. Es ist bekannt, Leistungsmodule im unteren Leistungsbereich ohne große parasitäre Induktivitäten mit Leiterplatten (PCB- Modulen) auszubilden. Im hohen Leistungsbereich hingegen kommen Leistungsmodule auf DCB-Basis (DCB = (engl.) „Direct Copper BondecT) mit Silikon- guss zum Einsatz. Solche Leistungsmodule sind jedoch nachtei¬ lig wenig flexibel hinsichtlich der elektrischen Verschaltung der Bauelemente des Leistungsmoduls. Insbesondere sind Bond- drähte und/oder lange Pins erforderlich, welche regelmäßig hohe parasitäre Induktivitäten und somit hohe Schaltüberspannungen bedingen. Insbesondere die hohen Induktivitäten sind problematisch: Daher wird die Betriebsspannung eines 1200-V- SiC-Chips auf etwa 800 V reduziert, obgleich höhere Spannun- gen im Zwischenkreis erwünscht sind. A modular approach and a wide scalability He ¬ submission of eg high current densities are not available for customer systems. WBG high-voltage modules Modules with operating voltages between 3.3 kV and 10 kV are also not yet sufficiently resistant to insulation. It is known to form power modules in the lower power range without large parasitic inductances with printed circuit boards (PCB modules). In the high power range, on the other hand, power modules based on DCB (DCB = Direct Copper BondecT) with silicon casting are used. However, such power modules are nachtei ¬ lig little flexibility with regard to the electrical interconnection of the components of the power module. In particular, bonding wires and / or long pins are required, which regularly cause high parasitic inductances and thus high switching overvoltages. In particular, the high inductances are problematic: Therefore, the operating voltage of a 1200 V SiC chip is reduced to about 800 V, although higher voltages in the DC bus are desired.
Es ist daher Aufgabe der Erfindung, ein vor dem Hintergrund des vorgenannten Standes der Technik verbessertes Leistungs¬ modul zu schaffen. Insbesondere soll das Leistungsmodul effi- zient betreibbar und hinreichend entwärmbar sein. Ferner soll das erfindungsgemäße Leistungsmodul vorzugsweise kostengüns¬ tig und zuverlässig sein. It is therefore an object of the invention to provide an improved against the background of the aforementioned prior art power ¬ module. In particular, the power module should be able to be operated efficiently and be sufficiently heatable. Furthermore, the power module according to the invention should preferably be cost-effective and reliable.
Diese Aufgabe der Erfindung wird mit einem Leistungsmodul mit den in Anspruch 1 angegebenen Merkmalen gelöst. BevorzugteThis object of the invention is achieved with a power module having the features specified in claim 1. preferred
Weiterbildungen der Erfindung sind in den zugehörigen Unteransprüchen, der nachfolgenden Beschreibung und der Zeichnung angegeben . Das erfindungsgemäße Leistungsmodul ist mit zumindest einemFurther developments of the invention are specified in the appended subclaims, the following description and the drawing. The power module according to the invention is provided with at least one
Komponententräger und mit zumindest einer ersten elektrischen Komponente gebildet. Komponententräger und Komponente sind miteinander, ein Spritzgussteil bildend, spritzvergossen. Es versteht sich, dass erfindungsgemäß der Komponententräger entweder als separates Einlegeteil in das Spritzgussteil ein¬ gegossen oder angegossen sein kann. Alternativ oder zusätzlich kann der zumindest eine Komponententräger auch selbst spritzgegossen sein oder zumindest als Teil des Spritzguss¬ teils spritzgegossen sein. Beide vorgenannte Fälle sollen unter der Wendung „Komponententräger und Komponente sind miteinander spritzvergossen" gleichermaßen mitumfasst sein. Component carrier and formed with at least a first electrical component. Component carrier and component are injection molded together forming an injection molded part. It is understood that according to the invention the component support may be a ¬ either cast as a separate insert in the injection-molded part or a glove. Alternatively or additionally, the at least one component carrier can itself be injection molded or at least be injection molded ¬ part as part of the injection ¬ . Both aforementioned cases should be included under the phrase "component carrier and component are injection molded together" equally.
Erfindungsgemäß ist mittels des Spritzgussteils der Funkti¬ onsumfang des Vergusses des Leistungsmoduls erheblich ausge¬ weitet, sodass eine höhere Flexibilität der elektrischen Ver¬ bindungen, eine Erhöhung der Zuverlässigkeit und eine Absen- kung der Produktionskosten erzielbar ist: Of the encapsulation of the power module according to the invention by means of the injection-molded part of the functi ¬ onsumfang significantly out ¬ expands, so that a greater flexibility of the electrical Ver ¬ bonds, an increase in the reliability and a sender effect of the production cost can be achieved:
Die elektrische Verschaltung kann erfindungsgemäß deutlich flexibler als bislang bekannt ausgelegt werden. Entsprechend lassen sich Kommutierungsinduktivitäten minimieren. Dies be- dingt geringe Schaltüberspannungen und folglich eine bessere Ausnutzung der Leistungsbauteile. Schaltverlustleistungen lassen sich entsprechend verringern, sodass eine höhere Effi¬ zienz erreicht wird. Zweckmäßig ist die elektrische Komponente oder sind die Kom¬ ponenten eine oder mehrere der nachfolgend genannten Kompo¬ nenten: Leistungsbauteil, Leiterrahmen, Substrat, insbesonde¬ re DCB- und/oder PCB-Substrat und/oder mit keramischem Material und/oder organischem Material gebildetes Substrat. The electrical interconnection can be designed according to the invention much more flexible than previously known. Accordingly, commutation inductances can be minimized. This results in low switching overvoltages and consequently better utilization of the power components. Switching power losses can be reduced accordingly, so that a higher effi ¬ ciency is achieved. Suitably the electrical component or the Kom ¬ components one or more of the following compo ¬ components: power device, lead frame, substrate insbesonde ¬ re DCB and / or PCB substrate and / or formed with a ceramic material and / or organic material substrate.
Vorteilhaft ist erfindungsgemäß kein Silikongel erforderlich. Folglich besteht auch im Fehlerfall kein Risiko einer Sili¬ kon-Kontamination . Weiterhin vorteilhaft können weitere zusätzliche Komponenten direkt ins Leistungsmodul eingebracht sind, indem sie gemein¬ sam mit dem Spritzgussteil vergossen sind. Insbesondere Kom¬ ponenten, welche Zusatzfunktionen bereitstellen, etwa Temperaturmessung oder Monitoring, können im Spritzgussteil mit geringem Aufwand und kostengünstig eingebettet sein. Advantageously, according to the invention no silicone gel is required. Consequently, there is also a fault occurs no risk of Sili con ¬ contamination. Further advantageously, additional components can be incorporated directly into the power module by being potted in common ¬ sam with the injection molded part. In particular, Kom ¬ components which provide additional functions, such as temperature measurement, or monitoring, can in the injection-molded part with little effort and be cost embedded.
Insbesondere können beim erfindungsgemäßen Leistungsmodul Einbettungstechniken eingesetzt sein, welche eine direkte In- tegration von Komponenten in die Verschaltungsbereiche ermög¬ lichen, insbesondere direkt in eine gedruckte Schaltung, zweckmäßig ein PCB (PCB = (engl.) „printed circuit boarcT) . Erfindungsgemäß kann der Komponententräger eine breite Aus¬ wahl von Substraten umfassen: So können als Substrate sowohl anorganische als auch organische Substrate vorhanden sein. In particular, embedding techniques may be used in the power module according to the invention which have a direct gration of components in the Verschaltungsbereiche ¬ made handy, in particular, directly into a printed circuit, suitably a PCB (PCB = (Engl.) "printed circuit boarcT). According to the invention of the components carrier can include a wide choice of substrates from ¬: Thus as substrates both inorganic and organic substrates be present.
Besonders vorteilhaft kann eine elektrische Verbindungstech- nik auch mittels flexibler gedruckter Schaltungen erfolgen, da miteinander vergossene Komponenten und Komponententräger des Leistungsmoduls grundsätzlich keinen entgegenstehenden geometrischen Beschränkungen unterliegen. Vorteilhaft ist das erfindungsgemäße Leistungsmodul sehr ro¬ bust ausgebildet. Das Spritzgussteil kapselt die zumindest eine Komponente zumindest teil- oder bereichsweise dicht, vorzugsweise fluiddicht, ein oder ab. Auf diese Weise ist das erfindungsgemäße Leistungsmodul kaum anfällig gegenüber ex- fernen Einflüssen und insbesondere zum Einsatz im Freien ausgebildet . An electrical connection technology can also be carried out particularly advantageously by means of flexible printed circuits, since components and component carriers of the power module which are cast on each other are fundamentally not subject to any conflicting geometric restrictions. Advantageously, the power module according to the invention is designed very robust. The injection-molded part encapsulates the at least one component at least partially or in some areas tightly, preferably in a fluid-tight manner, in or out. In this way, the power module according to the invention is hardly susceptible to external influences and in particular designed for outdoor use.
Das erfindungsgemäße Leistungsmodul kann mit hochzuverlässi¬ gem und hochisolierendem (insbesondere mit einer Durch- Schlagsfestigkeit von mehr als 150 kV/mm) , vorzugsweise mit hochtemperaturfestem, Isolationsmaterial, insbesondere tempe¬ raturfest gegenüber Temperaturen von mehr als 200 °C, versehen sein, indem das Spritzgussteil mit einem solchen Isolati¬ onsmaterial gebildet ist. Be the power module according to the invention can with hochzuverlässi ¬ gem and highly insulating (particularly with a dielectric strength of more than 150 kV / mm), preferably with a high temperature resistant, insulating material, in particular tempe ¬ raturfest to temperatures of more than 200 ° C, provided by the Injection molded part is formed with such Isolati ¬ onsmaterial.
In einer bevorzugten Weiterbildung des erfindungsgemäßen Leistungsmoduls sind mit dem Spritzgussteil zusätzlich eine oder mehrere weitere der nachfolgend genannten Komponenten spritzvergossen: Leistungsbauteil, Leiterrahmen, Substrat, insbesondere DCB- und/oder PCB-Substrat und/oder mit kerami¬ schem Material und/oder organischem Material gebildetes Sub¬ strat . Infolge des Spritzvergusses des Komponententrägers, insbeson¬ dere eines Substrats, zweckmäßig eines DCB-Substrats , lassen sich sämtliche weitere Bauteile und Verbindungsleiter des Leistungsmoduls beim Spritzgiessen in einem einzigen Prozess- schritt mit eingiessen. Erfindungsgemäß lassen sich insbesondere die Aufbau- und Verbindungstechnik mechanisch fixieren und alle Freiräume mit dem Spritzgussmaterial blasenfrei mit, insbesondere hochisolierendem, Material in einem Schritt auf¬ füllen. Das Material ersetzt somit das Silikongel und über- nimmt dessen Aufgaben, d.h. den Schutz vor Verschmutzung sowie eine hohe Kriechstromfestigkeit. In a preferred embodiment of the power module according to the invention one or more other of the following components are injection molded with the injection-molded part, in addition: power device, lead frame, substrate, in particular DCB and / or PCB substrate and / or with ceramic j ¬-magnetic material and / or organic material formed Sub ¬ strate. As a result of Spritzvergusses of the component carrier, insbeson ¬ particular a substrate, suitably a DCB substrate, allows all additional components and connecting conductors of the power module during injection molding in a single process step with eingiessen. According to the invention, in particular, the assembly and connection technology can be mechanically fixed and all free spaces with the injection molding material bubble-free with, in particular hochisolierendem, material in one step on ¬ fill. The material thus replaces the silicone gel and performs its tasks, ie protection against contamination and high creep resistance.
Zweckmäßig sind flächige, planare Verbindungsleiter und/oder Bonddrähte als elektrische Leitungsverbindungen vorhanden. Auf diese Weise ist mittels des Spritzgussteils eine stabile mechanische Integration von thermischen und elektrischen Schnittstellen kostengünstig realisiert. Suitably flat, planar connecting conductors and / or bonding wires are present as electrical line connections. In this way, a stable mechanical integration of thermal and electrical interfaces is realized inexpensively by means of the injection molded part.
Vorzugsweise bildet bei dem erfindungsgemäßen Leistungsmodul das Spritzgussteil ein Gehäuse, insbesondere eine Einhausung, des Leistungsmoduls. Preferably, in the power module according to the invention, the injection molded part forms a housing, in particular an enclosure, of the power module.
Die Gestaltung der Gehäusebauform kann erfindungsgemäß sehr flexibel an die benötigten Anforderungen angepasst sein. The design of the housing design according to the invention can be adapted very flexibly to the required requirements.
Durch die freie Formgebung des Gehäuses können nun weitere Elemente der Schaltung als Einlegeteile oder als kompletter Leiterrahmen in das Gehäuse eingelassen sein. Due to the free shaping of the housing further elements of the circuit can now be embedded as inserts or as a complete lead frame in the housing.
Besonders vorteilhaft können Komponenten, insbesondere Leis- tungsbauteile, in mehrlagigen Ebenen angeordnet sein. Der erfindungsgemäß mögliche flexible Aufbau erlaubt folglich einen besonders kostengünstigen mehrlagigen Aufbau. Particularly advantageous components, in particular power components, can be arranged in multi-layered planes. The inventively possible flexible structure thus allows a particularly cost-effective multilayer structure.
Bevorzugt grenzt bei dem erfindungsgemäßen Leistungsmodul zu- mindest ein Bereich zumindest der ersten Komponente nicht an das Spritzgussteil an. Dabei ist an diesem Bereich mindestens eine Leiterbahn angeordnet, insbesondere aufgebracht oder ge¬ schichtet . Insbesondere kann das Spritzgussteil derart gestaltet sein, dass Kontaktbereiche auf dem Substrat und/oder an Leistungs¬ bauteilen und/oder übrigen Komponenten beim Spritzgießen aus- gespart sind und in einem zweiten Schritt über aufgebrachtes Kupfer miteinander verschaltbar sind oder verschaltet sind. Vorzugsweise sind durch das Spritzgussteil ausgesparte Kon¬ taktbereiche mittels Kontakten ankontaktiert , insbesondere mittels Federkontakten. In the case of the power module according to the invention, at least one area of at least the first component preferably does not adjoin the injection-molded part. In this case, at least one conductor track is arranged, in particular applied or coated , in this area. In particular, the molded part can be designed such that contact areas are saved off during injection molding on the substrate and / or to power ¬ components and / or other components and in a second step over deposited copper can be interconnected with one another or are interconnected. Preferably, recessed by the injection molded part Kon ¬ tact areas are contacted by contacts, in particular by means of spring contacts.
Zweckmäßig bildet bei dem erfindungsgemäßen Leistungsmodul das Spritzgussteil einen mehrlagigen Komponententräger oder das Leistungsmodul weist einen mehrlagigen Komponententräger auf . Suitably, in the power module according to the invention, the injection molded part forms a multi-layered component carrier or the power module has a multi-layered component carrier.
Das Leistungsmodul weist vorzugsweise mehrere Spritzgussteile auf, die zusammenwirkend einen mehrlagigen Komponententräger bilden . Besonders bevorzugt sind bei dem erfindungsgemäßen Leistungs¬ modul mehrlagige Substrate vorhanden. Mittels des Spritzguss¬ teils kann auch bei mehrlagigen Substraten eine hinreichende Entwärmung erfolgen, sofern das Spritzgussmaterial des The power module preferably has a plurality of injection-molded parts, which cooperatively form a multi-layered component carrier. Particularly preferably, multi-layered substrates are present in the power module according to the invention. By means of the injection ¬ partly sufficient heat dissipation can also be done in multi-layer substrates, provided that the injection molding material
Spritzgussteils eine hinreichend hohe Wärmeleitfähigkeit auf- weist. Eine Einschränkung auf eine bestimmte Leistungsklasse des Leistungsmoduls ist infolge der hinreichenden Entwärmung nicht erforderlich. Injection molded part has a sufficiently high thermal conductivity. A limitation to a certain power class of the power module is not required due to the sufficient heat dissipation.
In einer bevorzugten Weiterbildung des erfindungsgemäßen Leistungsmoduls ist dieses zumindest mit einem Material spritzvergossen, welches eine Wärmeleitfähigkeit aufweist, die höher als die Wärmeleitfähigkeit von Silikon ist. In a preferred embodiment of the power module according to the invention this is injection-molded at least with a material which has a thermal conductivity which is higher than the thermal conductivity of silicone.
Vorzugsweise beträgt die Wärmeleitfähigkeit mindestens das Dreifache, vorzugsweise mindestens das Zehnfache und idealer¬ weise mindestens das Dreißigfache von Silikon. Besonders be¬ vorzugt ist das Spritzgussteil mit wärmeleitendem Kunststoff gebildet. Der wärmeleitende Kunststoff ist zweckmäßig wie an sich bekannt mittels Füllstoffen gebildet, welche aufgrund ihrer wärmeleitenden Eigenschaften dem Gesamtverbund aus Kunststoff und Füllstoffen wärmeleitende Eigenschaften verleihen. Als Füllstoffe können keramische und/oder metallische und/oder organische Füllstoffe vorhanden sein. Preferably, the thermal conductivity is at least three times, preferably at least ten times and ideally ¬ at least thirty times that of silicone. Be particularly ¬ vorzugt the molded part is formed with a heat-conducting plastic. The thermally conductive plastic is appropriate as on known to be formed by fillers, which impart heat-conducting properties of the overall composite of plastic and fillers due to their heat-conducting properties. As fillers, ceramic and / or metallic and / or organic fillers may be present.
In dieser Weiterbildung der Erfindung ergibt sich eine im Vergleich zu herkömmlichen Leistungsmodulen deutlich verbesserte Wärmeabfuhr. Dies ist vor allem für Lastanschlüsse des Leistungsmoduls relevant, da diese bisher nur schlecht oder überhaupt nicht entwärmt werden können. In this embodiment of the invention results in comparison to conventional power modules significantly improved heat dissipation. This is especially relevant for load connections of the power module, since these can be so far only poorly or not at all can be cooled.
Zugleich können in dieser Weiterbildung der Erfindung auch Leistungsbauteile des Leistungsmoduls mittels des Spritzguss- materials sehr effizient entwärmt werden. Dies ermöglicht ei¬ ne hohe Leistungsdichte sowie ein hohes Leistungsvolumen. Folglich ist ein effizienter Betrieb des Leistungsmoduls und somit eine hohe Ausnutzung von neuartigen Leistungsbauteilen, insbesondere WBG-Bauelementen, etwa mittels GaN und/oder SiC gebildeten WBG-Bauelementen, möglich. At the same time, in this development of the invention, power components of the power module can also be cooled very efficiently by means of the injection-molding material. This allows ei ¬ ne high power density and a high power volume. Consequently, an efficient operation of the power module and thus a high utilization of novel power devices, in particular WBG devices, such as GaN and / or SiC formed WBG devices is possible.
Geeigneterweise weist bei dem Leistungsmodul gemäß der Erfin¬ dung das Spritzgussteil Kühlkanäle für ein Kühlfluid auf. Er¬ findungsgemäß können die Kühlkanäle besonders einfach ausge- bildet sein, da sie einfach beim Spritzgießen gespritzt sein können. Insbesondere sind Kühlfinnen als Kühlkanäle leicht realisierbar. Auf diese Weise ist ein separater Fertigungs¬ schritt zur Ausbildung von Kühlkanälen beim erfindungsgemäßen Leistungsmodul entbehrlich. Das erfindungsgemäße Leistungsmo- dul lässt sich somit äußerst kostengünstig fertigen. Zweckmä¬ ßig kann auf eine aufwendige Wasserkühlung verzichtet werden. Die Entwärmung kann allein mittels Konvektionskühlung erfolgen . Nachfolgend wird die Erfindung anhand eines in der Zeichnung dargestellten Ausführungsbeispiels näher erläutert. Suitably, the molded part cooling channels for a cooling fluid in the power module according to the OF INVENTION ¬ dung. He ¬ inventively the cooling channels can be particularly simple forms excluded because they can be easily injected in injection molding. In particular, cooling fins are easily realized as cooling channels. In this way, a separate manufacturing ¬ step of forming cooling passages in the novel power module unnecessary. The power module according to the invention can thus be manufactured extremely inexpensively. Zweckmä ¬ larly can be dispensed with a complex water cooling. The cooling can be done by convection cooling alone. The invention will be explained in more detail with reference to an embodiment shown in the drawing.
Es zeigen: ein herkömmliches Leistungsmodul in Drahtbondtech¬ nologie schematisch im Querschnitt, ein herkömmliches Leistungsmodul mit herkömmlicher planarer Verbindungstechnologie schematisch im Querschnitt, ein erfindungsgemäßes Leistungsmodul in Drahtbond¬ technologie schematisch im Querschnitt, einen Teil eines weiteres erfindungsgemäßes Leis¬ tungsmoduls mit planarer Verbindungstechnologie schematisch im Querschnitt, das Leistungsmodul gem. Fig. 4 in schematisch in einer perspektivischen Darstellung sowie eine Weiterbildung des Leistungsmoduls gem. Fig. 5 in einer perspektivischen Darstellung. Show it: a conventional power module in Drahtbondtech ¬ nology schematically in cross section, a conventional power module with conventional planar interconnect technology schematically in cross section, a power module according to the invention in Drahtbond ¬ technology schematically in cross section, part of another inventive Lei ¬ tion module with planar connection technology schematically in cross section, the power module gem. Fig. 4 in schematically in a perspective view and a development of the power module acc. Fig. 5 in a perspective view.
Das in Fig. 1 dargestellte Leistungsmodul 5 entspricht dem Stand der Technik und umfasst eine Bodenplatte 10, welche ei- nen Komponententräger bildet. Von der Bodenplatte 10 strecken sich Gehäusewände 20 fort, welche zusammenwirkend mit der Bo¬ denplatte 10 ein Gehäuse bilden. The power module 5 shown in FIG. 1 corresponds to the prior art and comprises a base plate 10, which forms a component carrier. From the bottom plate 10, housing walls 20 extend away, which cooperatively form with the Bo ¬ denplatte 10 a housing.
Auf einem zwischen den Gehäusewänden 20 liegenden Bereich ist auf die Bodenplatte 10 eine Isolierschicht 30 aufgetragen, welche flächige Kupferkaschierungen 40 aufweist. Auf die Kup- ferkaschierungen 40 sind an ihren, der Isolierschicht abgewandten, flächigen Seiten Leistungshalbleiter 50 angeordnet, welche in an sich bekannter Weise mittels Bonddrähten 60 an Anschlusspins 70 sowie an einen Leistungsanschluss 80 elekt¬ risch angebunden sind. Die Anschlusspins 70 und der Leis¬ tungsanschluss 80 sind ebenfalls auf den der Isolierschicht 30 abgewandten flächigen Seiten der Kupferkaschierungen 40 angeordnet . On an area between the housing walls 20 an insulating layer 30 is applied to the bottom plate 10, which has flat copper cladding 40. Ferkaschierungen on the copper 40 are remote from their, the insulating power semiconductor disposed flat sides 50, which are connected elekt ¬ driven in known manner by means of bonding wires 60 to connector pins 70 as well as to a power terminal 80th The connector pins 70 and the Leis ¬ line connection 80 are also on the insulating layer 30 facing away from the flat sides of the copper cladding 40.
Die Isolierschicht 30 mit den Kupferkaschierungen 40 und den Leistungshalbleitern 50 sowie den Bonddrähten 60 und den Anschlusspins 70 und dem Leistungsanschluss 80 ist im zwischen den Gehäusewänden 20 liegenden Bereich in an sich bekannter Weise mit Silikon 90 ausgegossen. Das in Fig. 2 dargestellte herkömmliche Leistungsmodul 100 umfasst ebenfalls eine Bodenplatte 10 mit Gehäusewänden 20, eine Isolierschicht 30 mit Kupferkaschierungen 40 und darauf aufgebrachten Leistungshalbleitern 50 und Anschlusspins 70. Im Unterschied zum vorhergehend anhand von Fig. 1 beschriebe¬ nen Leistungsmodul 5 ist bei dem Leistungsmodul 100 gem. Fig. 2 an die Kupferkaschierungen 40 und Leistungsbauteile 50 eine strukturierte Isolierung 110 abgeschieden. Die Isolierung 110 ist dabei wenige 100 Mikrometer dick. Strukturiert ist die Isolierung 110 derart, dass die Isolierung 110 an Kontaktflä¬ chenbereichen der Kupferkaschierungen 40 und der Leistungsbauteile 50 ausgespart ist. The insulating layer 30 with the copper liners 40 and the power semiconductors 50 as well as the bonding wires 60 and the connection pins 70 and the power connection 80 is filled with silicone 90 in a manner known per se in the region between the housing walls 20. The conventional power module 100 shown in FIG. 2 likewise comprises a bottom plate 10 with housing walls 20, an insulating layer 30 with copper laminations 40 and power semiconductors 50 and connection pins 70 applied thereto. In contrast to the power module 5 described above with reference to FIG Power module 100 acc. Fig. 2 to the copper cladding 40 and power components 50 a structured insulation 110 deposited. The insulation 110 is a few 100 microns thick. Structures the insulation 110 is such that the insulation 110 to Kontaktflä ¬ chenbereichen of copper cladding 40 and the power components is recessed 50th
Die Isolierung 110 sowie die ausgesparten Kontaktflächenbe- reiche sind ihrerseits jeweils mit einer dünnen Kupferschicht 120 kaschiert. Die kaschierte Kupferschicht 120 ist - wie die Kupferkaschierungen 40 - in an sich bekannter Weise, beispielsweise mittels eines Additivverfahrens, aufgebracht. Die vorgenannten Bestandteile des Leistungsmoduls 100 sind wie bei dem Leistungsmodul gem. Fig. 1 begrenzt durch die Seitenwände 20 mit Silikon 90 vergossen. The insulation 110 as well as the recessed contact surface areas are in turn each covered with a thin copper layer 120. The laminated copper layer 120 is - like the copper cladding 40 - applied in a conventional manner, for example by means of an additive process. The aforementioned components of the power module 100 are as in the power module. Fig. 1 encapsulated by the side walls 20 with silicone 90 shed.
Das in Fig. 3 dargestellte erfindungsgemäße Leistungsmodul 200 weist wie das zuvor anhand von Fig. 1 beschriebene Leis¬ tungsmodul 5 eine Bodenplatte 10, eine Isolierschicht 30, an der Isolierschicht 30 angeordnete Kupferkaschierungen 40 so- wie Leistungsbauteile 50, Bonddrähte 60 und Anschlusspins 70 auf . The illustrated in Fig. 3 according to the invention the power module 200 includes as previously described with reference to FIG. 1 Leis ¬ processing module 5, a bottom plate 10, an insulating layer 30 disposed on the insulating layer 30 copper cladding 40 so- as power components 50, bonding wires 60 and connection pins 70 on.
Im Unterschied zum in Fig. 1 dargestellten Leistungsmodul 5 sind bei dem erfindungsgemäßen Leistungsmodul 200 die An¬ schlusspins 70 allerdings nicht lediglich an Kupferkaschie- rungen 40 angeordnet, sondern die Anschlusspins 70 bilden vielmehr jeweils einen Verbindungssteg von jeweils zwei sich flächig und in ihren flächigen Erstreckungsrichtungen zuei- nander parallel erstreckenden Flachkontakten, bei welchem einer der Flachkontakte der Kupferkaschierung 40 an der Isolierschicht 30 vollflächig anliegt und mittels Bonddrähten 60 kontaktiert ist. Der übrige Flachkontakt 205 streckt sich mittels des Verbindungsstegs von der Bodenplatte 10 fort und erstreckt sich mit seinen flächigen Erstreckungsrichtungen parallel zur Oberfläche der Isolierschicht 30. Dieser übrige Flachkontakt 205 dient der externen elektrischen Kontaktie- rung des Leistungsmoduls 200. Flachkontakte und Verbindungs¬ steg bilden gemeinsam einstückige Kupferschienen 210. In contrast to in Fig. 1 illustrated power module 5 are in the inventive power module 200, the On ¬ schlusspins 70 but not approximations only at Kupferkaschie- arranged 40, but the connection pins 70 but rather in each case form a connecting web of each of two sheet-like area and in their extension directions Parallel flat contacts extending parallel to one another, in which one of the flat contacts of the copper cladding 40 rests on the insulating layer 30 over the whole area and is contacted by means of bonding wires 60. The remaining flat contact 205 extends by means of the connecting web of the bottom plate 10 and extends with its planar extension directions parallel to the surface of the insulating layer 30. This remaining flat contact 205 is used for external electrical contacting of the power module 200. Flat contacts and connecting ¬ web are together one-piece copper bars 210.
Ferner sind auch an der Bodenplatte abgewandten Flachseiten der Leistungsbauteile 50 solche Kupferschienen 210 angeord¬ net. Die jeweils der Isolierschicht 30 fernen Flachkontakte 205 sowie die jeweils den Leistungsbauteilen fernen Flachkon- takte 205 der Kupferschienen 210 sind dabei mit ihren flächigen Erstreckungsrichtungen jeweils bereichsweise in gemeinsa¬ men Ebenen 220, 230 angeordnet. Furthermore, 50 facing away from the bottom plate flat sides of the power components 50 such copper bars 210 angeord ¬ net. Each of the insulating layer 30 distant flat contacts 205, and each the power components distant flat contacts 205 of the copper bars 210 are arranged with their planar extension directions of respective regions, in the Common ¬ men planes 220, 230th
Das Gehäuse des erfindungsgemäßen Leistungsmoduls 200 ist nun derart gebildet, dass der sich zwischen Bodenplatte 10 und den Ebenen 220, 230 erstreckende Freiraum mittels Spritzguss, im gezeigten Ausführungsbeispiel vollständig, gefüllt ist. Das so gebildete Spritzgussteil 250 bildet folglich ein Ge¬ häuse des Leistungsmoduls 200, welches an seiner Außenseite mit den der Bodenplatte 10 fernen Flachkontakten 205 der Kupferschienen 210 bündig abschließt. Das Gehäuse ist somit mit¬ tels eines Spritzgussteils 250 gebildet, in welchem die übri- gen funktionalen Komponenten des Leistungsmoduls 200 einge¬ bettet sind. The housing of the power module 200 according to the invention is now formed in such a way that the free space extending between the base plate 10 and the levels 220, 230 is completely filled by means of injection molding, in the exemplary embodiment shown. The thus formed injection molded part 250 thus forms a Ge ¬ housing of the power module 200, which terminates flush on its outer side with the bottom plate 10 remote flat contacts 205 of the copper bars 210. The housing is thus formed with ¬ means of an injection molded part 250, in which the remaining gen functional components of the power module 200 are embedded bet ¬ .
Das Spritzgussteil 250 ist mit einem wärmeleitenden Kunst- stoff gebildet, welcher seine wärmeleitenden Eigenschaften aufgrund eingebrachter wärmeleitender Füllstoffe erhält. Im dargestellten Ausführungsbeispiel sind keramische Füllstoffe (nicht eigens in den Figuren gezeigt) in den Kunststoff ein¬ gebracht. In weiteren, nicht eigens dargestellten Ausfüh- rungsbeispielen ist der Kunststoff alternativ oder zusätzlich mit metallischen und/oder organischen Füllstoffen versetzt. The injection-molded part 250 is formed with a thermally conductive plastic, which obtains its heat-conducting properties due to introduced heat-conducting fillers. In the illustrated embodiment, ceramic fillers (not specifically shown in the figures) are brought into the plastic ¬ . In other, not specifically illustrated exemplary embodiments, the plastic is mixed alternatively or additionally with metallic and / or organic fillers.
Die elektrische Kontaktierung der bündig mit dem Spritzguss¬ teil 250 abschließenden Flachkontakte 205 des Leistungsmoduls 200 erfolgt mittels eines an das Spritzgussteil 250 angeleg¬ ten Leiterrahmens 300, welcher als Flachteil ausgebildet ist. The electrical contact of the flush with the molding part 250 ¬ flat contacts 205 of the power module 200 by means of a Matters ¬ th to the injection molded part 250 lead frame 300, which is formed as a flat part.
Bei einem weiteren in Fig. 4 gezeigten erfindungsgemäßen Leistungsmodul 300 ist wie in den zuvor beschriebenen Leis- tungsmodulen 5, 100, 200 eine Bodenplatte 10, eine Isolier¬ schicht 30 mit Kupferkaschierungen 40 und darauf aufgebrachten Leistungshalbleitern 50 und mit Anschlusspins 70 vorhanden . Ähnlich wie bei dem in Fig. 2 dargestellten LeistungsmodulIn a further in Fig. 4 shown inventive power module 300, an insulating ¬ layer as in the above-described performance processing modules 5, 100, 200 a bottom plate 10, 30, 40 and disposed thereon power semiconductors 50 and to terminal pins 70 is provided with a copper cladding. Similar to the power module shown in FIG
100 ist bei dem weiteren erfindungsgemäßen Leistungsmodul 300 gem. Fig. 4 an die Kupferkaschierungen 40 und Leistungsbauteile 50 - abgesehen von an jeweils der Bodenplatte 10 abge¬ wandten Kontaktflächenbereichen - eine strukturierte Isolie- rung 110 abgeschieden. 100 is in accordance with the further inventive power module 300. Fig. 4 to the copper cladding 40 and power components 50 - apart from on each of the bottom plate 10 abge ¬ applied contact surface areas - a structured insulation 110 deposited.
Die Isolierung 110 sowie die Kontaktflächenbereiche sind je¬ weils mit einer wenige 100 Mikrometer dünnen Kupferschicht 320 zur elektrischen Kontaktierung kaschiert. The insulation 110 and the contact surface areas are each ¬ Weil with a few 100 microns thin copper layer 320 laminated for electrical contacting.
Die kaschierte Kupferschicht 320 ist in an sich bekannter Weise, beispielsweise mittels eines Additivverfahrens, aufge¬ bracht . Das Gehäuse des erfindungsgemäßen Leistungsmoduls 300 ist wie im in Fig. 3 gezeigten Ausführungsbeispiel derart gebildet, dass der sich zwischen Bodenplatte 10 und den der Bodenplatte fernen Flachkontakten 205 erstreckende Freiraum mittels The laminated copper layer 320 is positioned ¬ introduced in manner known per se, for example by means of an additive method. As in the exemplary embodiment shown in FIG. 3, the housing of the power module 300 according to the invention is formed in such a way that the free space extending between the base plate 10 and the flat plate 205 remote from the base plate 10
Spritzguss zumindest teilweise, vorzugsweise vollständig, ge¬ füllt ist. Das Gehäuse ist somit mittels eines Spritzguss¬ teils 250 gebildet, in welchem die übrigen funktionalen Komponenten des Leistungsmoduls 300 eingebettet sind. Dabei be- steht das Spritzgussteil 250 wie anhand von Fig. 3 beschrie¬ ben im Inneren aus einem wärmeleitenden Kunststoff. Injection molding at least partially, preferably completely, ge ¬ fills. The housing is thus formed by means of an injection molding ¬ part 250, in which the remaining functional components of the power module 300 are embedded. In this con- sists the injection molded part 250 as described with reference to FIG. 3 beschrie ¬ ben inside of a heat conducting plastic.
Das Spritzgussteil 250 weist wie in Fig. 5 gezeigt Kühlfinnen 380 zur Kühlung des Leistungsmoduls 300 auf, welche sich senkrecht zur Bodenplatte 10 orientiert von dieser in der Art fortstrecken. Während das Spritzgussteil 250 im Inneren mit dem wärmeleitenden Kunststoff gebildet ist, ist äußerlich noch zusätzlich eine witterungsbeständige Deckschicht 385 an den wärmeleitenden Kunststoff angespritzt. Die witterungsbe- ständige Deckschicht 385 dient lediglich zur weiteren Verlän¬ gerung der Lebensdauer des Leistungsmoduls 300 im Außeneinsatz und ist in weiteren Ausführungsbeispielen erfindungsgemäß grundsätzlich verzichtbar. Zusätzlich kann das Spritzgussteil 250 wie in Fig. 6 gezeigt mit Ausnehmungen 400 versehen sein, in welche eine Kühlfluid- leitung in der Art einer Kühlschlange einlegbar ist. Dazu sind die Kühlfinnen 390 im Unterschied zum zuvor beschriebe¬ nen Ausführungsbeispiel nicht als Teil des Spritzgussteils 250 ausgebildet. Vielmehr sind die Kühlfinnen gem. Fig. 6 beiderseits der Bodenplatte 10 zweckmäßig separat jeweils an eigene Finnenanschlussteile 410, 420 ausgebildet. An diesen Finnenanschlussteilen 410, 420 strecken sich die Kühlfinnen 390 senkrecht fort und sind zueinander in rechten Winkeln an- geordnet. Die Finnenanschlussteile 410, 420 bilden gemeinsam mit einer mittels des Spritzgussteils 250 gebildeten The injection molded part 250 has, as shown in FIG. 5, cooling fins 380 for cooling the power module 300, which are oriented perpendicular to the base plate 10 in the manner of this. While the injection molded part 250 is formed inside with the heat-conducting plastic, a weather-resistant cover layer 385 is externally additionally molded onto the heat-conducting plastic. The weather-continuous top layer 385 serves only to further Longer side ¬ delay the lifetime of the power module 300 for outdoor use and is inventively generally dispensable in other embodiments. In addition, as shown in FIG. 6, the injection-molded part 250 can be provided with recesses 400 into which a cooling-fluid line in the manner of a cooling coil can be inserted. For this, the cooling fins 390 are not formed, in contrast to the previously-described ¬ NEN embodiment, as part of the injection-molded part 250th Rather, the cooling fins are gem. Fig. 6 on both sides of the bottom plate 10 expediently separately formed in each case to own fin connection parts 410, 420. At these fin connection parts 410, 420, the cooling fins 390 extend perpendicularly and are arranged at right angles to one another. The fin connection parts 410, 420 together with a formed by means of the injection molded part 250
Umhausung der elektronischen Komponenten die Ausnehmungen 400. Housing of the electronic components, the recesses 400.

Claims

Patentansprüche claims
1. Leistungsmodul (200, 300) mit zumindest einem Komponen¬ tenträger (250) und mit zumindest einer ersten elektrischen Komponente (50), welche miteinander, ein Spritzgussteil (250) bildend, spritzvergossen sind. 1. power module (200, 300) with at least one Komponen ¬ tenträger (250) and with at least one first electrical component (50) which together, an injection molded part (250) forming, are injection molded.
2. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem der das Spritzgussteil (250) mindestens ei¬ nen Teil eines Komponententrägers (250) bildet. 2. The power module according to any preceding claim, wherein forming the injection-molded part (250) at least ei ¬ NEN part of a component carrier (250).
3. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem mit dem Spritzgussteil (250) zusätzlich eine oder mehrere weitere der nachfolgend genannten Komponen¬ ten spritzvergossen sind: Leistungsbauteil (50), Leiter¬ rahmen, Substrat, insbesondere DCB- und/oder PCB- Substrat und/oder mit keramischem Material und/oder organischem Material gebildetes Substrat. 3. The power module according to any preceding claim, wherein the injection-molded part (250) one or more other of the following Components ¬ th are also injection molded: power component (50), head ¬ frame, substrate, in particular DCB and / or PCB Substrate and / or formed with ceramic material and / or organic material substrate.
4. Leistungsmodul nach einem der beiden vorhergehenden Ansprüche, bei welchem das Spritzgussteil (250) ein Gehäu¬ se, insbesondere eine Einhausung, des Leistungsmoduls (200, 300) bildet. 4. Power module according to one of the two preceding claims, wherein the injection-molded part (250) a housing ¬ se, in particular an enclosure, the power module (200, 300).
5. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem zumindest ein Bereich zumindest der ersten Komponente (50) nicht an das Spritzgussteil (250) an¬ grenzt und an diesem Bereich mindestens eine Leiterbahn (320) angeordnet, insbesondere aufgebracht oder ge¬ schichtet, ist. 5. The power module according to any preceding claim, wherein at least a portion of at least the first component (50) is not adjacent to the injection-molded part (250) at ¬ and arranged at least one conductor track in this portion (320), in particular applied or ge coated ¬, is.
6. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem das Spritzgussteil (250) einen mehrlagigen Komponententräger bildet oder aufweist. 6. Power module according to one of the preceding claims, wherein the injection molded part (250) forms or has a multi-layer component carrier.
7. Leistungsmodul nach einem der vorhergehenden Ansprüche, welches mehrere Spritzgussteile aufweist, die zusammen¬ wirkend einen mehrlagigen Komponententräger bilden. 7. Power module according to one of the preceding claims, which comprises a plurality of injection molded parts, which together ¬ acting form a multi-layer component carrier.
Leistungsmodul nach einem der vorhergehenden Ansprüche, welches zumindest mit einem Material spritzvergossen ist, welches eine Wärmeleitfähigkeit aufweist, die höher als die Wärmeleitfähigkeit von Silikon ist. Power module according to one of the preceding claims, which is injection-molded at least with a material which has a thermal conductivity which is higher than the thermal conductivity of silicone.
9. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem das Spritzgussteil Kühlkanäle aufweist. 9. Power module according to one of the preceding claims, wherein the injection-molded part has cooling channels.
10. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem das Spritzgussteil (250) eine Wärmeleitfä¬ higkeit aufweist, welche mindestens das Dreifache, vor¬ zugsweise mindestens das Zehnfache und idealerweise min¬ destens das Dreißigfache von Silikon aufweist. 10. The power module according to any preceding claim, wherein the injection-molded part (250) has a Wärmeleitfä ¬ ability which min ¬ least comprising at least three times, before ¬ preferably at least ten times and ideally thirty times of silicone.
11. Leistungsmodul nach einem der vorhergehenden Ansprüche, bei welchem das Spritzgussteil (250) mit wärmeleitendem Kunststoff gebildet ist. 11. Power module according to one of the preceding claims, wherein the injection-molded part (250) is formed with thermally conductive plastic.
PCT/EP2017/065511 2016-06-27 2017-06-23 Power module WO2018001883A1 (en)

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