WO2018001001A1 - 电致发光器件及其制作方法 - Google Patents

电致发光器件及其制作方法 Download PDF

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Publication number
WO2018001001A1
WO2018001001A1 PCT/CN2017/085531 CN2017085531W WO2018001001A1 WO 2018001001 A1 WO2018001001 A1 WO 2018001001A1 CN 2017085531 W CN2017085531 W CN 2017085531W WO 2018001001 A1 WO2018001001 A1 WO 2018001001A1
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Prior art keywords
cathode layer
layer
transparent metal
transmittance
film
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PCT/CN2017/085531
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English (en)
French (fr)
Inventor
李杰威
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to US15/574,740 priority Critical patent/US10673010B2/en
Publication of WO2018001001A1 publication Critical patent/WO2018001001A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers

Definitions

  • Embodiments of the present invention relate to the field of display technologies, and in particular, to an electroluminescent device and a method of fabricating the same.
  • the organic light-emitting diode (OLED) device of the prior art includes a top emission type OLED, and the light of the top emission type OLED is emitted from one side of the cathode layer, so that the cathode layer not only has better electron injection capability. And a lower sheet resistance, but also a better transmittance.
  • the cathode layer of the prior art has a low transmittance.
  • the cathode In order to ensure a good transmittance, the cathode must be made thin, but this causes an increase in sheet resistance, an increase in driving voltage, and a decrease in voltage stability.
  • there is a scheme of fabricating a graphene auxiliary cathode layer on the cathode layer but since the material of the graphene auxiliary cathode layer and the material of the cathode layer are completely different types, different needs are required. Process preparation leads to complicated processes and reduced production efficiency.
  • An object of the embodiments of the present invention is to provide an electroluminescent device and a method for fabricating the same, which are used to solve the problem of reducing the sheet resistance without increasing the process complexity under the premise of ensuring the electron injection capability and transmittance of the cathode layer.
  • an electroluminescent device comprising a cathode layer, further comprising: an auxiliary cathode layer on the cathode layer, the auxiliary cathode layer being made of at least one transparent metal material.
  • a method of fabricating an electroluminescent device comprising: Forming a cathode layer; forming an auxiliary cathode layer on the cathode layer; the auxiliary cathode layer is made of at least one of the transparent metal materials.
  • FIG. 1 is a schematic structural diagram of an electroluminescent device according to an embodiment of the present invention.
  • FIGS. 2a and 2b are a schematic perspective view and a cross-sectional view of another electroluminescent device according to an embodiment of the present invention.
  • FIG. 3 is a flow chart of a method for fabricating an electroluminescent device according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of still another electroluminescent device according to an embodiment of the present invention.
  • each film layer in the drawings do not reflect the true scale, and are merely intended to illustrate the present invention.
  • An embodiment of the present invention provides an electroluminescent device, as shown in FIG. 1, comprising a cathode layer 02 on a substrate 101, for example, the cathode layer 02 is a co-vaporized film layer having at least one transparent metal material; Including: an auxiliary cathode layer 03 on the cathode layer 02, and the material of the auxiliary cathode layer 03 is at least one transparent metal material.
  • an auxiliary cathode layer is disposed on the cathode layer to increase the thickness of the film layer.
  • the auxiliary cathode layer is made of a transparent metal material, which can better meet the transmittance requirement of the device, and can ensure the electron injection capability. Under the premise of transmittance and lowering the sheet resistance, it is beneficial to improve the stability of the driving voltage and improve the display image quality; and the auxiliary cathode layer and the cathode layer both have a transparent metal material, so that the same process can be utilized in the production process. The preparation of the process does not complicate the process and is beneficial to increase production efficiency.
  • At least one of the transparent metallic materials in the auxiliary cathode layer is the same as the at least one transparent metal material in the co-evaporated film layer.
  • the transparent metal material used in the auxiliary cathode layer is the same as the transparent metal material in the cathode layer, so that the process can be further simplified and the production efficiency can be improved in the production process.
  • the co-evaporated film layer further includes an inorganic compound, a conductive organic compound, or a metal having a lower work function than the transparent metal material in the co-evaporated film layer.
  • the co-evaporated film layer in this embodiment may be a co-evaporated film layer of a transparent metal material and an inorganic compound, may be a co-evaporated film layer of a transparent metal material and a conductive organic compound, or may be a transparent metal material and The work function is lower than the co-evaporated film layer of at least one metal of the transparent metallic material.
  • the work function of the transparent metal material in the co-evaporated film layer is higher than 4.0 eV; the work function of the metal in the co-evaporated film layer is less than 4.0 eV.
  • the transparent metal material in the co-evaporated film layer is a transparent metal material with a high work function, and the metal in the co-evaporated film layer is a transparent metal material with a low work function.
  • auxiliary cathode layer there are a plurality of transparent metal materials in the auxiliary cathode layer, such as transparent metal Ag or transparent metal aluminum (Al).
  • the transparent metal material in the co-evaporated film layer includes, but is not limited to, a transparent metal Ag or a transparent metal Al; a metal having a lower work function than the transparent metal material in the co-evaporated film layer includes but It is not limited to metal Mg, metal calcium (Ca), metal yttrium (Yb) or metal lanthanum (Sc).
  • the transparent metal materials Ag and Al in the co-evaporated film layer are transparent high work function metals having a work function higher than 4.0 eV, which is resistant to corrosion;
  • the metal Mg, Ca, Yb or Sc in the co-evaporated film layer is A low work function metal having a work function lower than 4.0 eV can be used as an electron emission material.
  • the co-evaporated film layer is made of a transparent metal material and a metal having a lower work function than the transparent metal material, the auxiliary cathode layer being made of a transparent metal material of the co-evaporated film layer .
  • the transparent metal material in the auxiliary cathode layer is a transparent metal Ag
  • the transparent metal material in the co-vaporized film layer is a transparent metal Ag
  • the work function is lower than the transparent metal material in the co-evaporated film layer is a metal Mg.
  • the co-evaporation ratio of the particle concentration of Mg and Ag in the co-evaporated film layer ranges from 1:1 to 20:1; the film thickness range of the co-evaporated film layer is The thickness of the auxiliary cathode layer is The total transmittance of the co-evaporated film layer and the auxiliary cathode layer ranges from 30% to 50%.
  • the co-evaporation ratio range of the particle concentration of Mg and Ag can effectively ensure the electron injecting ability, and the thickness of the cathode layer and the thickness range of the film layer in the prior art.
  • auxiliary cathode layer such as a transparent metal Ag film layer
  • the transparent metal Ag film layer can ensure better transmission while reducing the sheet resistance. rate.
  • a transparent metal Ag is present in the cathode layer, and a transparent metal Ag is also utilized in the auxiliary cathode layer, and the same preparation process can be employed. Therefore, under the premise of ensuring the electron injection capability and transmittance of the cathode layer, the sheet resistance is reduced without increasing the process complexity.
  • the co-evaporation ratio of the particle concentration of Mg and Ag in the co-evaporated film layer ranges from 5:1 to 10:1.
  • the material of the inorganic compound includes, but is not limited to, lithium fluoride (LiF).
  • the transparent metal material of the auxiliary cathode layer is transparent metal Al; the transparent metal material in the co-vaporized film layer is metal Al, and the material of the inorganic compound is LiF.
  • the co-steaming ratio range of the particle concentration of the Al and the LiF in the co-evaporated film layer, the thickness range of the film layer, and the like may be set according to actual needs, and is not specifically limited herein.
  • the material of the conductive organic compound includes, but is not limited to, a quinoline lithium or a phthalocyanine derivative.
  • the transparent metal material of the auxiliary cathode layer is transparent metal Al; the transparent metal material in the co-vaporized film layer is transparent metal Al, and the material of the conductive organic compound is quinolin. Lithium porphyrin.
  • Al and quinoline in the co-evaporated film layer The range of the co-steaming ratio of the particle concentration of the lithium, the thickness range of the film layer, and the like may be set according to actual needs, and is not specifically limited herein.
  • the auxiliary cathode layer 03 coats the surface and sides of the cathode layer 02.
  • the auxiliary cathode layer 03 can protect the cathode layer 02.
  • Fig. 2b is a schematic cross-sectional view taken along line AA of Fig. 2a.
  • the auxiliary cathode layer 03 is provided with a recess in which the cathode layer 02 is disposed such that the top surface of the cathode layer 02 and the bottom surface of the recess are in contact with each other.
  • the groove edge regions are in contact with each other on the surface of the base substrate 01.
  • the above structure seals the cathode layer between the base substrate 01 and the auxiliary cathode layer 03, so that the cathode layer 02 is effectively protected from entry of external moisture or impurities.
  • the electroluminescent device is a top emission OLED.
  • the embodiment of the invention further provides a method for fabricating an electroluminescent device. As shown in FIG. 3, the method includes at least the following steps:
  • Step 310 forming a cathode layer;
  • the cathode layer is a co-vaporized film layer having at least one transparent metal material;
  • Step 320 forming an auxiliary cathode layer on the cathode layer; the material of the auxiliary cathode layer is at least one transparent metal material.
  • an auxiliary cathode layer is disposed on the cathode layer to increase the thickness of the film layer.
  • the auxiliary cathode layer is made of a transparent metal material, which can better meet the transmittance requirement of the device, and can ensure the electron injection capability. Under the premise of transmittance and lowering the sheet resistance, it is beneficial to improve the stability of the driving voltage and improve the display image quality; and the auxiliary cathode layer and the cathode layer both have a transparent metal material, so that the same process can be utilized in the production process. The preparation of the process does not complicate the process and is beneficial to increase production efficiency.
  • the predetermined film thickness of the cathode layer and the predetermined film thickness of the auxiliary cathode layer need to be distributed according to the target total transmittance of the cathode layer and the auxiliary cathode layer (ie, the total required total transmittance). .
  • the predetermined film thickness of the cathode layer is necessary to correct the predetermined film thickness of the cathode layer, the predetermined film thickness of the auxiliary cathode layer, and the actual total transmittance of the corresponding cathode layer and the auxiliary cathode layer to avoid affecting other parameters of the device. control.
  • the predetermined film layer of the auxiliary cathode layer is The precise control of the thickness, the actual total transmittance of the cathode layer and the auxiliary cathode layer, the embodiment of the present invention provides a corresponding correction method.
  • the fabrication method provided by the embodiment of the present invention further includes: determining a predetermined transmittance of the cathode layer and an auxiliary cathode according to a desired total transmittance of the cathode layer and the auxiliary cathode layer.
  • the preset transmittance of the layer is a predetermined transmittance of the cathode layer and an auxiliary cathode according to a desired total transmittance of the cathode layer and the auxiliary cathode layer.
  • the fitting relationship between the film thickness of the auxiliary cathode layer and the transmittance according to a predetermined fitting relationship between the film thickness of the cathode layer and the transmittance at different co-steaming ratios, and the predetermined preset of the cathode layer The transmittance and the predetermined transmittance of the auxiliary cathode layer respectively determine the predetermined film thickness of the cathode layer and the predetermined film thickness of the auxiliary cathode layer;
  • a cathode layer on a base substrate such as white glass according to a predetermined film thickness of the cathode layer, forming an auxiliary cathode layer on the white glass on which the cathode layer is formed according to a predetermined film thickness of the cathode layer, and measuring the cathode layer and The actual total transmittance of the auxiliary cathode layer; comparing the actual total transmittance of the cathode layer and the auxiliary cathode layer with the target total transmittance, calculating the transmittance error, and determining whether the transmittance error is Within the preset range;
  • the predetermined film thickness of the cathode layer and the predetermined film thickness of the auxiliary cathode layer are corrected accurately, otherwise, according to the difference between the actual total transmittance and the target total transmittance, and the auxiliary cathode layer
  • the relationship between the thickness of the film layer and the transmittance is adjusted to adjust the thickness of the predetermined film layer of the auxiliary cathode layer.
  • the cathode layer is formed, for example, the cathode layer is formed on the base substrate according to the film thickness of the cathode layer after the correction is accurately corrected; and in the step 320, the cathode layer is formed on the cathode layer.
  • the cathode layer is, for example, an auxiliary cathode layer formed on the base substrate on which the cathode layer is formed, according to the film thickness of the auxiliary cathode layer corrected accurately.
  • the relationship between the film thickness of the auxiliary cathode layer and the transmittance can be determined by vaporizing the auxiliary cathode layers of different film thicknesses and testing the transmittance, for each film thickness. A fitting relationship is obtained by fitting the transmittance of the test.
  • the relationship between the film thickness of the cathode layer and the transmittance at different co-steaming ratios can be determined by vaporizing the cathode layers of different film thicknesses at the same co-steaming ratio. The transmittance was tested and the fit between the film thickness and the tested transmittance was obtained. Wherein, the thickness of the film layer of the vapor-deposited cathode layer is within a preset thickness range. Wherein, the preset thickness range may be In one example, the preset thickness range is Thus, the predetermined thickness is relatively thick, and if the oxidation of the cathode layer has a relatively small influence on the thickness of the film layer, it can be ignored, and the obtained fitting relationship is more accurate.
  • an electroluminescent device and a method for fabricating the same according to an embodiment of the present invention will be described in more detail by taking an electroluminescent device as a top emission type OLED device as an example.
  • the specific structure of the electroluminescent device in this embodiment is as shown in FIG. 4, and includes: a substrate substrate 01, an anode layer 04, a hole injection layer 05, a hole transport layer 06, and an electric layer laminated on the substrate substrate in this order.
  • the cathode layer 02 is a co-evaporated film layer of metal Mg and transparent metal Ag
  • the auxiliary cathode layer 03 is an Ag film layer
  • the auxiliary cathode layer 03 covers the surface and side faces of the cathode layer 02 to protect the cathode layer 02.
  • the co-evaporation ratio of the particle concentration of Mg and Ag ranges from 5:1 to 10:1; the film thickness range of the co-evaporated film layer of Mg and Ag is The thickness of the film layer of the Ag film layer is The total transmittance of the co-evaporated film layer and the Ag film layer of Mg and Ag ranges from 30% to 50%.
  • the thickness of the predetermined film layer of the Ag film layer, the thickness of the predetermined film layer of the co-evaporated film layer of Mg and Ag, and the actual total transmittance of the co-evaporated film layer and the Ag film layer of Mg and Ag are corrected. .
  • the relationship between the film thickness of the Ag film layer and the transmittance is determined in advance, for example, an Ag film layer having different film thicknesses is vapor-deposited and the transmittance is tested, and the thickness of each film layer and the transmittance of the test are performed. By fitting, the fitting relationship between the film thickness of the Ag film layer and the transmittance was obtained. It is also necessary to predetermine the relationship between the film thickness and the transmittance of the co-evaporated film layer of Mg and Ag in the actual required co-steaming ratio, for example, vapor deposition of different film thicknesses under the actual required co-steaming ratio.
  • the predetermined transmittance of the co-evaporated film layer of Mg and Ag and the Ag film layer are determined.
  • the target total transmittance range is 30% to 50%.
  • Mg and Ag are in the actual required co-steaming ratio.
  • the predetermined film thickness of the co-evaporated film layer and the predetermined film layer thickness of the Ag film layer are determined.
  • the transmittance error is within the preset error range; if yes, it is determined that the predetermined film thickness of the co-vapor-film layer of Mg and Ag and the predetermined film thickness of the Ag film layer are corrected accurately; otherwise, according to the actual total transmission
  • the difference between the ratio and the total transmittance of the target, the relationship between the film thickness of the Ag film layer and the transmittance, and the thickness of the predetermined film layer of the Ag film layer are adjusted so that the actual total transmittance and the target are achieved.
  • the total transmittance is within the preset error range.
  • Step 1 A laminated anode layer 04, a hole injection layer 05, a hole transport layer 06, an electroluminescence layer 07, an electron transport layer 08, and an electron injection layer 09 are sequentially formed on the base substrate.
  • Step 2 according to the actual required co-steaming ratio, and correcting the film thickness of the co-deposited film layer of Mg and Ag, vapor-depositing the co-evaporated film layer of Mg and Ag on the substrate formed in step one (ie, Cathode layer 02).
  • Step 3 depositing Ag on the surface of the vapor-deposited film layer of the Mg and Ag on the base substrate on which the vapor-deposited film layer of Mg and Ag is deposited according to the film thickness of the Ag film layer after the correction is accurately performed.
  • Film layer ie auxiliary cathode layer 03).
  • Step 4 forming a light extraction layer 10 on the Ag film layer.
  • an auxiliary cathode layer is disposed on the cathode layer to increase the thickness of the film layer, and the auxiliary cathode layer is made of a transparent metal material, which can better satisfy the device pair.
  • the requirement of transmittance can reduce the sheet resistance under the premise of ensuring electron injection capability and transmittance, which is beneficial to improve the stability of the driving voltage and provide display image quality; and the transparent metal material and the cathode layer of the auxiliary cathode are used.

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种电致发光器件及其制作方法。该电致发光器件包括阴极层（02），还包括：位于阴极层（02）上的辅助阴极层（03），辅助阴极层（03）的材料为至少一种透明金属材料。由于在阴极层（02）上设置了辅助阴极层（03），该辅助阴极层（03）采用透明金属材料，能够较好的满足器件对透过率的需求，可在保证电子注入能力和透过率的前提下，降低方块电阻，有利于提升驱动电压的稳定性，提升显示画质。

Description

电致发光器件及其制作方法
相关申请的交叉引用
本申请基于并且要求于2016年7月1日递交的中国专利申请第201610515980.8号的优先权，在此全文引用上述中国专利申请公开的内容。
技术领域
本发明实施例涉及显示技术领域，尤其涉及一种电致发光器件及其制作方法。
背景技术
现有技术中的有机发光二极管(Organic Light-emitting Diode，OLED)器件包括顶发射型OLED，该顶发射型OLED的光从阴极层一侧出射，因而阴极层不仅要具有较佳的电子注入能力和较低的方块电阻，还要具有较佳的透过率。
现有的阴极层的透过率低，为了保证较佳的透过率，就必须将阴极做的很薄，但是这样会导致方块电阻增加，驱动电压升高，且电压稳定性降低。为了解决该问题，现有技术的方案中，有在阴极层上制作石墨烯辅助阴极层的方案，但是由于该石墨烯辅助阴极层的材料与阴极层的材料是完全不同的种类，需要不同的工艺制备，导致工艺复杂化，降低了生产效率。
发明内容
本发明实施例的目的是提供一种电致发光器件及其制作方法，用于解决在保证阴极层电子注入能力和透过率的前提下，降低方块电阻且不增加工艺复杂度的问题。
根据本发明第一方面，提供一种电致发光器件，包括阴极层，还包括：位于所述阴极层上的辅助阴极层，所述辅助阴极层的材料为至少一种透明金属材料。
根据本发明第二方面，提供一种电致发光器件的制作方法，该方法包括： 形成阴极层；在所述阴极层上形成辅助阴极层；所述辅助阴极层的材料为至少一种所述透明金属材料。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为本发明实施例提供的一种电致发光器件的结构示意图；
图2a和2b为本发明实施例提供的另一种电致发光器件的立体示意图和截面示意图；
图3为本发明实施例提供的一种电致发光器件的制作方法流程图；
图4为本发明实施例提供的又一种电致发光器件的结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现在“包括”或者“包含”前面的元件或者物件涵盖出现在“包括”或者“包含”后面列举的元件或者物件及其等同，并不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
附图中各膜层的厚度和形状不反映真实比例，目的只是示意说明本发明内容。
本发明实施例提供一种电致发光器件，如图1所示，包括位于衬底基板01上的阴极层02，例如，阴极层02为具有至少一种透明金属材料的共蒸膜层；还包括：位于阴极层02上的辅助阴极层03，辅助阴极层03的材料为至少一种透明金属材料。
本发明实施例中，在阴极层上设置了辅助阴极层，增加了膜层厚度，该辅助阴极层采用透明金属材料，能够较好的满足器件对透过率的需求，可在保证电子注入能力和透过率的前提下，降低方块电阻，有利于提升驱动电压的稳定性，提升显示画质；且该辅助阴极层与阴极层中均具有透明金属材料，因而在生产过程中，可以利用同一种工艺制备，不会使得工艺复杂化，有利于提高生产效率。
至少一些实施例中，辅助阴极层中的至少一种透明金属材料与共蒸膜层中的至少一种透明金属材料相同。这样，辅助阴极层采用的透明金属材料与阴极层中具有的透明金属材料相同，因而在生产过程中，可以进一步简化工艺，提高生产效率。
至少一些实施例中，上述共蒸膜层还包括：无机化合物，导电有机化合物，或功函数低于该共蒸膜层中的透明金属材料的金属。
也就是说，本实施例中的共蒸膜层，可以是透明金属材料与无机化合物的共蒸膜层，可以是透明金属材料与导电有机化合物的共蒸膜层，还可以是透明金属材料与功函数低于该透明金属材料的至少一种金属的共蒸膜层。
至少一些实施例中，共蒸膜层中的透明金属材料的功函数高于4.0eV；共蒸膜层中的金属的功函数低于4.0eV。本实施例中，共蒸膜层中的透明金属材料为高功函数的透明金属材料，共蒸膜层中的金属为低功函数的透明金属材料。
至少一些实施例中，辅助阴极层中的透明金属材料有多种，例如为透明金属Ag或透明金属铝(Al)。
至少一些实施例中，共蒸膜层中的透明金属材料包括但不限于为透明金属Ag或透明金属Al；功函数低于共蒸膜层中的透明金属材料的金属包括但 不限于为金属Mg，金属钙(Ca)，金属镱(Yb)或金属钪(Sc)。本实施例中，共蒸膜层中的透明金属材料Ag和Al为功函数高于4.0eV的透明高功函数金属，可耐腐蚀；共蒸膜层中的金属Mg，Ca，Yb或Sc为功函数低于4.0eV的低功函数金属，可作为电子发射材料。
至少一些实施例中，所述共蒸膜层由透明金属材料和功函数低于所述该透明金属材料的金属制成，所述辅助阴极层由所述共蒸膜层的透明金属材料制成。例如，辅助阴极层中的透明金属材料为透明金属Ag；共蒸膜层中的透明金属材料为透明金属Ag，功函数低于共蒸膜层中的透明金属材料为金属Mg。一个示例中，共蒸膜层中的Mg与Ag的粒子浓度的共蒸比例范围为1:1～20:1；共蒸膜层的膜层厚度范围是
Figure PCTCN2017085531-appb-000001
辅助阴极层的膜层厚度范围是
Figure PCTCN2017085531-appb-000002
共蒸膜层和辅助阴极层的总透过率的范围是30％～50％。本实施例中，Mg与Ag的粒子浓度的共蒸比例范围可以有效的保证电子注入能力，且阴极层的厚度与现有技术中的膜层厚度范围
Figure PCTCN2017085531-appb-000003
相比，大大减小了，又由于在阴极层上还设置有辅助阴极层，例如透明金属Ag膜层，该透明金属Ag膜层在降低方块电阻的同时，又能够保证有较佳的透过率。另外，阴极层中有透明金属Ag，辅助阴极层中也利用了透明金属Ag，可以在采用相同的制备工艺。因而，实现了在保证阴极层电子注入能力和透过率的前提下，降低方块电阻且不增加工艺复杂度。
一个示例中，共蒸膜层中的Mg与Ag的粒子浓度的共蒸比例范围为5:1～10:1。
基于以上相关实施例，无机化合物的材料包括但不限于为氟化锂(LiF)。基于此，在另一种可能的实施例中，一个示例中，辅助阴极层的透明金属材料为透明金属Al；共蒸膜层中的透明金属材料为金属Al，无机化合物的材料为LiF。本实施例中，共蒸膜层中的Al与LiF的粒子浓度的共蒸比例范围、膜层厚度范围等等可以根据实际需要设置，在此不做具体限定。
基于以上相关实施例，导电有机化合物的材料包括但不限于为喹啉锂或酞菁类衍生物。相应的，在又一种可能的实施例中，一个示例中，辅助阴极层的透明金属材料为透明金属Al；共蒸膜层中的透明金属材料为透明金属Al，导电有机化合物的材料为喹啉锂。本实施例中，共蒸膜层中的Al与喹啉 锂的粒子浓度的共蒸比例范围、膜层厚度范围等等可以根据实际需要设置，在此不做具体限定。
一个示例中，如图2a和2b所示，辅助阴极层03包覆阴极层02的表面和侧面。这样，辅助阴极层03可以对阴极层02起到保护作用。图2b是沿图2a的AA线截取的截面示意图。从图2b可以看出，辅助阴极层03设置有一凹槽，阴极层02设置在该凹槽中，使阴极层02的顶面与凹槽的底面彼此接触。凹槽边缘区于衬底基板01的表面彼此接触。上述结构将阴极层密封在衬底基板01和辅助阴极层03之间，使阴极层02得到有效保护，防止外界水汽或杂质的进入。
一个示例中，电致发光器件为顶发射型OLED。
本发明实施例还提供一种电致发光器件的制作方法，如图3所示，该方法至少包括如下步骤：
步骤310、形成阴极层；例如，该阴极层为具有至少一种透明金属材料的共蒸膜层；
步骤320、阴极层上形成辅助阴极层；该辅助阴极层的材料为至少一种透明金属材料。
本发明实施例中，在阴极层上设置了辅助阴极层，增加了膜层厚度，该辅助阴极层采用透明金属材料，能够较好的满足器件对透过率的需求，可在保证电子注入能力和透过率的前提下，降低方块电阻，有利于提升驱动电压的稳定性，提升显示画质；且该辅助阴极层与阴极层中均具有透明金属材料，因而在生产过程中，可以利用同一种工艺制备，不会使得工艺复杂化，有利于提高生产效率。
在制作过程中，对阴极层的膜层厚度，辅助阴极层的膜层厚度，阴极层和辅助阴极层的总透过率的精确控制，是得到稳定性较佳的器件的重要因素。本发明实施例中，需要按照阴极层和辅助阴极层的目标总透过率(即实际需要的总透过率)，分配阴极层的预设膜层厚度和辅助阴极层的预设膜层厚度。因而需要事先对阴极层的预设膜层厚度，辅助阴极层的预设膜层厚度，相应的阴极层和辅助阴极层的实际的总透过率进行校正，以避免影响对器件的其它参数的控制。为了实现对阴极层的预设膜层厚度，辅助阴极层的预设膜层 厚度，阴极层和辅助阴极层的实际的总透过率的精准控制，本发明实施例提供了相应的校正方法。
一个示例中，在形成阴极层之前，本发明实施例提供的制作方法还包括：根据所需的阴极层和辅助阴极层的目标总透过率，确定阴极层的预设透过率和辅助阴极层的预设透过率；
根据预先确定的在不同共蒸比例时阴极层的膜层厚度与透过率的拟合关系，辅助阴极层的膜层厚度与透过率的拟合关系，以及确定出的阴极层的预设透过率和辅助阴极层的预设透过率，分别确定阴极层的预设膜层厚度和辅助阴极层的预设膜层厚度；
根据阴极层的预设膜层厚度在诸如白玻璃的衬底基板上形成阴极层，根据阴极层的预设膜层厚度在形成有阴极层的白玻璃上形成辅助阴极层，并测量阴极层和辅助阴极层的实际的总透过率；将该阴极层和辅助阴极层的实际的总透过率与目标总透过率进行对比，计算透过率误差，并判断该透过率误差是否在预设范围内；
如果是，则确定阴极层的预设膜层厚度和辅助阴极层的预设膜层厚度校正准确，否则，根据实际的总透过率与目标总透过率的差值，以及辅助阴极层的膜层厚度与透过率的拟合关系，调整辅助阴极层的预设膜层厚度。
上述步骤310中，形成阴极层，例如是：根据校正准确后的阴极层的膜层厚度，按照相应的共蒸比例在衬底基板上形成阴极层；上述步骤320中，在阴极层上形成辅助阴极层，例如是：根据校正准确后的辅助阴极层的膜层厚度，在形成有阴极层的衬底基板上形成辅助阴极层。
至少一些实施例中，辅助阴极层的膜层厚度与透过率的拟合关系可以是通过如下方式确定的：蒸镀不同膜层厚度的辅助阴极层并测试透过率，对各膜层厚度与测试的透过率进行拟合得到拟合关系。
至少一些实施例中，在不同共蒸比例时阴极层的膜层厚度与透过率的拟合关系可以是通过如下方式确定的：在相同共蒸比例下，蒸镀不同膜层厚度的阴极层并测试透过率，对各膜层厚度与测试的透过率进行拟合得到拟合关系。其中，蒸镀的阴极层的膜层厚度在预设厚度范围内。其中，预设厚度范围可以是
Figure PCTCN2017085531-appb-000004
一个示例中，该预设厚度范围为
Figure PCTCN2017085531-appb-000005
这样， 预设厚度相对较厚，如果阴极层发生氧化对膜层厚度的影响也相对较小，可以忽略，得到的拟合关系越准确。
下面以电致发光器件为顶发射型OLED器件为例，对本发明实施例提供的一种电致发光器件及其制作方法进行更加详细地描述。
本实施例中的电致发光器件的具体结构如图4所示，包括：衬底基板01，依次层叠在衬底基板上的阳极层04、空穴注入层05、空穴传输层06、电致发光层07、电子传输层08、电子注入层09、阴极层02、辅助阴极层03、光取出层10。例如，阴极层02为金属Mg与透明金属Ag的共蒸膜层，辅助阴极层03为Ag膜层，辅助阴极层03包覆阴极层02的表面和侧面，以便保护阴极层02。
Mg与Ag的共蒸膜层中，Mg与Ag的粒子浓度的共蒸比例范围为5:1～10:1；Mg与Ag的共蒸膜层的膜层厚度范围是
Figure PCTCN2017085531-appb-000006
Ag膜层的膜层厚度范围是
Figure PCTCN2017085531-appb-000007
Mg与Ag的共蒸膜层和Ag膜层的总透过率的范围是30％～50％。
下面对上述图4所示的电致发光器件的制作流程进行具体说明：
一、预先对Ag膜层的预设膜层厚度，Mg与Ag的共蒸膜层的预设膜层厚度，Mg与Ag的共蒸膜层和Ag膜层的实际的总透过率进行校正。
首先，预先确定Ag膜层的膜层厚度与透过率的拟合关系，例如，蒸镀不同膜层厚度的Ag膜层并测试透过率，对各膜层厚度与测试的透过率进行拟合，得到Ag膜层的膜层厚度与透过率的拟合关系。还要预先确定在实际需要的共蒸比例时Mg与Ag的共蒸膜层的膜层厚度与透过率的拟合关系，例如，在实际需要的共蒸比例下，蒸镀不同膜层厚度的Mg与Ag的共蒸膜层并测试透过率，对各膜层厚度与测试的透过率进行拟合，得到Mg与Ag的共蒸膜层的膜层厚度与透过率的拟合关系。其中，蒸镀的Mg与Ag的共蒸膜层的膜层厚度在
Figure PCTCN2017085531-appb-000008
然后，根据所需的Mg与Ag的共蒸膜层和Ag膜层在500nm的可见光下的目标总透过率，确定Mg与Ag的共蒸膜层的预设透过率和Ag膜层的预设透过率。其中的目标总透过率的范围是30％～50％。基于以上确定的Ag膜层的膜层厚度与透过率的拟合关系，在实际需要的共蒸比例时Mg与Ag的 共蒸膜层的膜层厚度与透过率的拟合关系，以及确定的Mg与Ag的共蒸膜层的预设透过率和Ag膜层的预设透过率，分别确定Mg与Ag的共蒸膜层的预设膜层厚度、Ag膜层的预设膜层厚度。
在干净的白玻璃上根据确定的Mg与Ag的共蒸膜层的预设膜层厚度，按照相应的共蒸比例形成Mg与Ag的共蒸膜层；根据确定的Ag膜层的预设膜层厚度，在该Mg与Ag的共蒸膜层上蒸镀Ag膜层；利用紫外可见分光光度计，测量Mg与Ag的共蒸膜层以及Ag膜层在500nm可见光下的实际的总透过率；将测量的实际的总透过率与所需的Mg与Ag的共蒸膜层和Ag膜层的目标总透过率进行对比，计算透过率误差；判断该透过率误差是否在预设误差范围内；如果是，则判断确定的Mg与Ag的共蒸膜层的预设膜层厚度和Ag膜层的预设膜层厚度是校正准确的；否则，根据实际的总透过率与目标总透过率的差值，Ag膜层的膜层厚度与透过率的拟合关系，对Ag膜层的预设膜层厚度进行调整，以使得实际的总透过率与目标总透过率相比在预设误差范围内。
二、在上述流程基础上，进行如下制作步骤：
步骤一、在衬底基板上依次形成层叠的阳极层04、空穴注入层05、空穴传输层06、电致发光层07、电子传输层08和电子注入层09。
步骤二、根据实际需要的共蒸比例，以及校正准确后的Mg与Ag的共蒸膜层的膜层厚度，在步骤一形成的衬底基板上蒸镀Mg与Ag的共蒸膜层(即阴极层02)。
步骤三、根据校正准确后的Ag膜层的膜层厚度，在蒸镀有Mg与Ag的共蒸膜层的衬底基板上蒸镀包覆该Mg与Ag的共蒸膜层的表面的Ag膜层(即辅助阴极层03)。
步骤四、在Ag膜层上形成光取出层10。
本发明实施例提供的一种电致发光器件及其制作方法中，在阴极层上设置了辅助阴极层，增加了膜层厚度，该辅助阴极层采用透明金属材料，能够较好的满足器件对透过率的需求，可在保证电子注入能力和透过率的前提下，降低方块电阻，有利于提升驱动电压的稳定性，提供显示画质；且该辅助阴极采用的透明金属材料与阴极层中具有的透明金属材料相同，因而在生产过 程中，可以利用与该阴极层同样的工艺制备，不会使得工艺复杂化，有利于提高生产效率。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。

Claims (20)

  1. 一种电致发光器件，包括阴极层，和位于所述阴极层上的辅助阴极层，所述辅助阴极层的材料为至少一种透明金属材料。
  2. 根据权利要求1所述的电致发光器件，其中，所述阴极层为包括至少一种透明金属材料的共蒸膜层，所述辅助阴极层中的至少一种透明金属材料与所述共蒸膜层中的至少一种透明金属材料相同。
  3. 根据权利要求2所述的电致发光器件，其中，所述共蒸膜层还包括：无机化合物，导电有机化合物，或功函数低于所述共蒸膜层中的透明金属材料的金属。
  4. 根据权利要求3所述的电致发光器件，其中，所述共蒸膜层由透明金属材料和功函数低于所述该透明金属材料的金属制成，所述辅助阴极层由所述共蒸膜层的透明金属材料制成。
  5. 根据权利要求3所述的电致发光器件，其中，所述辅助阴极层中的至少一种透明金属材料为透明金属银Ag或透明金属铝Al。
  6. 根据权利要求5所述的电致发光器件，其中，所述共蒸膜包括至少一种透明金属材料和功函数低于所述共蒸膜层中的透明金属材料的金属，所述共蒸膜层中的至少一种透明金属材料为透明金属Ag或透明金属Al；所述功函数低于所述共蒸膜层中的透明金属材料的金属为金属镁Mg，金属钙Ca，金属镱Yb或金属钪Sc。
  7. 根据权利要求6所述的电致发光器件，其中，所述共蒸膜包括至少一种透明金属材料和无机化合物，所述共蒸膜层中的至少一种透明金属材料为透明金属Ag或透明金属Al；所述无机化合物为氟化锂LiF。
  8. 根据权利要求6所述的电致发光器件，其中，所述共蒸膜包括至少一种透明金属材料和导电有机化合物，所述共蒸膜层中的至少一种透明金属材料为透明金属Ag或透明金属Al；所述导电有机化合物为喹啉锂或酞菁类衍生物。
  9. 根据权利要求4所述的电致发光器件，其中，所述辅助阴极层中的透明金属材料为透明金属Ag；所述共蒸膜层中的透明金属材料为透明金属Ag， 所述功函数低于所述共蒸膜层中的透明金属材料的金属为金属Mg。
  10. 根据权利要求9所述的电致发光器件，其中，所述共蒸膜层中的Mg与Ag的粒子浓度的共蒸比例范围为1:1～20:1；
    所述共蒸膜层的膜层厚度范围是
    Figure PCTCN2017085531-appb-100001
    所述辅助阴极层的膜层厚度范围是
    Figure PCTCN2017085531-appb-100002
    所述共蒸膜层和所述辅助阴极层的总透过率的范围是30％～50％。
  11. 根据权利要求7所述的电致发光器件，其中，所述辅助阴极层的至少一种透明金属材料为透明金属Al；所述共蒸膜层中的至少一种透明金属材料为透明金属Al，所述无机化合物的材料为LiF。
  12. 根据权利要求8所述的电致发光器件，其中，所述辅助阴极层的至少一种透明金属材料为透明金属Al；所述共蒸膜层中的至少一层透明金属材料为透明金属Al，所述导电有机化合物的材料为喹啉锂。
  13. 根据权利要求1至12任一项所述的电致发光器件，其中，所述辅助阴极层包覆所述阴极层的表面和侧面。
  14. 根据权利要求1至13任一项所述的电致发光器件，其中，所述电致发光器件为顶发射型有机发光二极管OLED。
  15. 一种电致发光器件的制作方法，包括：
    形成阴极层；
    在所述阴极层上形成辅助阴极层；所述辅助阴极层的材料为至少一种透明金属材料。
  16. 根据权利要求15所述的制作方法，其中，在形成阴极层之前，该方法还包括：根据所需的所述阴极层和所述辅助阴极层的目标总透过率，确定所述阴极层的预设透过率和所述辅助阴极层的预设透过率；
    根据预先确定的在不同共蒸比例时所述阴极层的膜层厚度与透过率的拟合关系，所述辅助阴极层的膜层厚度与透过率的拟合关系，以及所得到的所述阴极层的预设透过率和所述辅助阴极层的预设透过率，分别确定所述阴极层的预设膜层厚度和所述辅助阴极层的预设膜层厚度；
    根据所述阴极层的预设膜层厚度在衬底基板上形成阴极层，根据所述阴极层的预设膜层厚度在形成有阴极层的衬底基板上形成辅助阴极层，并测量 该阴极层和辅助阴极层的实际的总透过率；将该阴极层和辅助阴极层的实际的总透过率与所述目标总透过率进行对比，计算透过率误差，并判断该透过率误差是否在预设范围内；
    如果是，则确定所述阴极层的预设膜层厚度和所述辅助阴极层的预设膜层厚度校正准确，否则，根据阴极层和辅助阴极层的实际的总透过率与所述目标总透过率的差值，以及所述辅助阴极层的膜层厚度与透过率的拟合关系，调整所述辅助阴极层的预设膜层厚度。
  17. 根据权利要求16所述的制作方法，其中，形成阴极层，包括：
    根据校正准确后的所述阴极层的膜层厚度，按照相应的共蒸比例在衬底基板上形成所述阴极层。
  18. 根据权利要求17所述的制作方法，其中，在所述阴极层上形成辅助阴极层，包括：
    根据校正准确后的所述辅助阴极层的膜层厚度，在形成有所述阴极层的衬底基板上形成辅助阴极层。
  19. 根据权利要求16所述的制作方法，其中，确定所述辅助阴极层的膜层厚度与透过率的拟合关系，包括：蒸镀不同膜层厚度的辅助阴极层并测试透过率，对各膜层厚度与测试的透过率进行拟合得到拟合关系；
    确定在不同共蒸比例时所述阴极层的膜层厚度与透过率的拟合关系，包括：在相同共蒸比例下，蒸镀不同膜层厚度的阴极层并测试透过率，对各膜层厚度与测试的透过率进行拟合得到拟合关系；其中，蒸镀的阴极层的膜层厚度在预设厚度范围内。
  20. 根据权利要求15至18任一项所述的制作方法，所述阴极层为具有至少一种透明金属材料的共蒸膜层。
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