WO2018000875A1 - 一种封装基板及其制作方法 - Google Patents

一种封装基板及其制作方法 Download PDF

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Publication number
WO2018000875A1
WO2018000875A1 PCT/CN2017/078924 CN2017078924W WO2018000875A1 WO 2018000875 A1 WO2018000875 A1 WO 2018000875A1 CN 2017078924 W CN2017078924 W CN 2017078924W WO 2018000875 A1 WO2018000875 A1 WO 2018000875A1
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Prior art keywords
frame
substrate
plated
package substrate
thickness
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PCT/CN2017/078924
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English (en)
French (fr)
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崔正丹
李志东
邱醒亚
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广州兴森快捷电路科技有限公司
深圳市兴森快捷电路科技股份有限公司
广州市兴森电子有限公司
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Publication of WO2018000875A1 publication Critical patent/WO2018000875A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details

Definitions

  • the present invention relates to a PCB board, and in particular to a package substrate and a method of fabricating the same.
  • the use of the fixture requires manual operation of the thin plate, manual operation requires additional personnel, and manual operation is easy for the ultra-thin plate (Core 0.035mm copper thickness 2/2um) to be damaged, which is not conducive to mass production conversion; And the technical level after the equipment transformation has little effect on the improvement of the thin plate, the specific improvement space is small, and the yield after the equipment transformation is only 70%, so the above method is generally not adopted. In summary, it is difficult for mass plates of this specification to be in mass production.
  • a first object of the present invention is to provide a package substrate and The manufacturing method improves the ability of the thin plate to pass through the horizontal line by increasing the toughness and rigidity around the edge of the plate, and at the same time avoids the occurrence of breakage caused by the collision with the roller and causes the plate to crack.
  • a second object of the present invention is to provide a method for fabricating a package substrate, which can realize mass production of a thin plate and ensure a good yield rate by optimizing the process without using a jig and without modifying the device. .
  • the present invention adopts the following technical solutions:
  • a package substrate comprising a substrate, wherein the substrate has a thickness of ⁇ 60 ⁇ m, and a frame is provided at a peripheral edge of the upper surface and/or the lower surface of the substrate.
  • the thickness of the substrate is denoted by H1
  • the thickness of the frame is denoted by H2
  • the width of the substrate is recorded as W1
  • the frame is made by screen printing to form a silk screen resin frame; the thickness of the screen printing resin frame is 15-25 ⁇ m; and the distance between the inner frame and the outer frame of the screen printing resin frame is 10-20 mm.
  • the frame is made of a copper-plated frame or a nickel-plated frame by a plating method; the plated copper frame or the nickel-plated frame has a thickness of 10-20 ⁇ m, and the copper-plated frame or the nickel-plated frame is inside. The distance between the frame and the outer frame is 10-20mm.
  • the substrate is a PCB board.
  • a manufacturing method of a package substrate comprising the steps of:
  • a silk screen resin frame is produced by silk screen printing at the peripheral edges of the upper surface and/or the lower surface of the substrate.
  • the relevant parameters of the silk screen are as follows: the mesh number is 110-130 mesh; The parameters are: the temperature in the cabinet oven is 140-160 ° C, and the time is 25-35 min; preferably, the resin type is PHP 900IR6PH manufactured by Shanrong Chemical Co., Ltd. (other types of resins can also be used).
  • a manufacturing method of a package substrate comprising the steps of:
  • step 2 sticking a dry film: a dry film is applied on the upper surface and/or the lower surface of the substrate of step 1);
  • Exposure development the substrate coated with the dry film obtained in the step 2) is subjected to exposure and development to form a blank region in a frame shape;
  • Electroplating is performed on the frame-shaped blank area of the upper surface and/or the lower surface of the substrate obtained in the step 3), so that a copper-plated border or a nickel-plated border is formed at the peripheral edge of the upper surface and/or the lower surface of the substrate. ;
  • Step 2 The parameters of the dry film are controlled as follows: temperature: 100-120 ° C, pressure: 0.4-0.6 MPa, film speed: 1.5-2.5 m / min;
  • Step 3) parameters of exposure development concentration of Na 2 CO 3 : 8-12 g / L; pH value: 10.5; temperature: 30 ⁇ 2 ° C;
  • Step 5 Parameters of film detachment: concentration of NaOH: 20-30 g/l; filming pressure: 2.40 ⁇ 0.1 kg/cm 2 ; temperature: 50 ⁇ 2 °C.
  • the copper-plated frame or the nickel-plated frame has a thickness of 10-20 ⁇ m, and the distance between the inner frame and the outer frame of the copper-plated frame or the nickel-plated frame is 10-20 mm.
  • step 5 the following steps are sequentially included: laser drilling, degumming, sinking Copper, electroplating, dry film pretreatment, film, exposure, DES, AOI, solder mask, electroplated soft gold, AFVI (automatic visual inspection), manual inspection, baking, packaging, shipping.
  • steps are sequentially included: laser drilling, degumming, sinking Copper, electroplating, dry film pretreatment, film, exposure, DES, AOI, solder mask, electroplated soft gold, AFVI (automatic visual inspection), manual inspection, baking, packaging, shipping.
  • AFVI automatic visual inspection
  • the thickness of the substrate of the present invention is ⁇ 60 ⁇ m, and a frame is provided at the peripheral edge of the upper surface and/or the lower surface of the substrate.
  • the frame of the present invention is made of a copper-plated frame or a nickel-plated frame by electroplating; the thickness of the copper-plated frame or the nickel-plated frame is 10-20 ⁇ m, and the copper-plated frame or the nickel-plated frame is inside. The distance between the frame and the outer frame is 10-20mm.
  • the thickness of the copper-plated frame or the nickel-plated frame is less than 10 ⁇ m, it has no effect on the yield of the thin plate.
  • it is greater than 10 ⁇ m the improvement effect is obvious, and when the thickness is greater than 20 ⁇ m, the subsequent dry film treatment may be affected. It is easy to cause the film to be weak.
  • the method for manufacturing a package substrate according to the present invention can be optimized by a process without using a jig and without modifying the device, that is, the frame is made by a silk screen method, or a screen printing resin frame or a
  • the frame is made of a copper-plated frame or a nickel-plated frame by electroplating, which can realize the mass production of the sheet and ensure a good yield.
  • FIG. 1 is a schematic structural view of a package substrate according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic flow chart showing a manufacturing process of a package substrate according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic flow chart showing a manufacturing process of a package substrate according to Embodiment 1 of the present invention.
  • the present embodiment provides a package substrate including a substrate 1 having a thickness of 50 ⁇ m, and a frame 2 is disposed at a peripheral edge of the upper surface and the lower surface of the substrate 1 .
  • the substrate is a PCB board.
  • the embodiment provides a method for fabricating a package substrate, including the following steps:
  • a screen printing resin frame 21 is produced by screen printing at the peripheral edges of the upper surface and/or the lower surface of the substrate.
  • the relevant parameters of the silk screen are as follows: the net mesh number is 120 mesh; the curing parameter: the temperature in the cabinet oven is 150 ° C, the time is 30 min; the thickness of the silk screen resin frame is 15-25 ⁇ m; the silk screen resin frame The distance between the inner frame and the outer frame is 10-20 mm.
  • the resin type is PHP 900IR6PH manufactured by Yamagata Chemical Co., Ltd. (other types of resins may also be used).
  • the embodiment provides a method for fabricating a package substrate, including the following steps:
  • Exposure development the substrate with the dry film obtained in step 2) is exposed and developed to form a blank area of a frame shape; parameters of exposure development: concentration of Na 2 CO 3 : 8-12 g / L; pH value: 10.5; Temperature: 30 ⁇ 2 ° C;
  • electroplating is performed on the upper surface of the substrate obtained in step 3) and/or the blank area of the lower surface of the lower surface, so that a copper-plated frame 22 is formed at the peripheral edge of the upper surface and/or the lower surface of the substrate; : current density: 0.5-1.0ASD, time: 50-80min;
  • the copper-plated frame or the nickel-plated frame has a thickness of 10 ⁇ m, and the distance between the inner frame and the outer frame of the copper-plated frame or the nickel-plated frame is 10 mm.
  • the feature of the embodiment is that, in the method for fabricating the package substrate of the second embodiment, after the step 5) is completed, the following steps are sequentially included: laser drilling, degumming, copper sinking, electroplating, dry film pretreatment, filming. , exposure, DES, AOI, solder mask, electroplated soft gold, AFVI (automatic visual inspection), manual inspection, baking, packaging, shipping. Others are the same as in the second embodiment.
  • the present invention is characterized in that, in the method for fabricating the package substrate of the second embodiment, the thickness of the substrate is 40 ⁇ m, the thickness of the copper-plated frame or the nickel-plated frame is 15 ⁇ m, and the copper-plated frame or the nickel-plated frame is inside. The distance between the frame and the outer frame is 15mm. Others are the same as in the second embodiment.
  • the present invention is characterized in that, in the method for fabricating the package substrate of the second embodiment, the thickness of the substrate is 30 ⁇ m, the thickness of the copper-plated frame or the nickel-plated frame is 20 ⁇ m, and the copper-plated frame or the nickel-plated frame is inside. The distance between the frame and the outer frame is 20mm. Others are the same as in the second embodiment.
  • a package substrate comprises a substrate 1 having a thickness of 50 ⁇ m, and a frame 2 is provided at a peripheral edge of the upper surface of the substrate 1.
  • the substrate is a PCB board.
  • Example 1 or 2 is the same.
  • a package substrate includes a substrate 1 having a thickness of 50 ⁇ m, and a frame 2 is provided at a peripheral edge of the lower surface of the substrate 1.
  • the substrate is a PCB board. Others are the same as in Embodiment 1 or 2.
  • the fixture is used: the fixture needs to be manually operated by the thin plate, the manual operation increases the personnel, and the manual operation is easy to cause damage to the ultra-thin plate (Core 0.035mm copper thickness 2/2um), which is not conducive to mass production conversion;
  • Equipment transformation The equipment transformation cost is high, and the technical level after the equipment transformation has little effect on the improvement of the thin plate. The specific improvement space is small, and the yield after the equipment transformation is only 70%, so the above methods are generally not used.
  • the package substrate obtained by using the embodiment of the invention can greatly improve the ability of the thin plate to pass through the horizontal line, can effectively cope with the thin plate production, and improve the manufacturing capacity of the thin plate to reach the plate thickness (core20um, copper thickness 2/2um), and the yield rate is achieved. above 95.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

本发明公开了一种封装基板，包括基板，所述基板的厚度≤60μm，所述基板的上表面和/或下表面的四周边缘处设有边框。本发明公开了封装基板的制作方法，将所述边框采用丝印的方法制作而成丝印树脂边框，或者是将所述边框为采用电镀的方法制作而成镀铜边框或镀镍边框。本发明通过增加板边四周的韧性与刚性，从而提升薄板通过水平线的能力，同时能够避免其在与滚轮发生碰撞时产生破损而导致板裂的情况发生。

Description

一种封装基板及其制作方法 技术领域
本发明涉及一种PCB板，特别是涉及一种封装基板及其制作方法。
背景技术
随着电子产品不断向多功能化、小型轻量化、高性能化的方向发展，对封装基板轻薄化的需求也越来越高。例如，高端的多层SIP产品通常会要求采用0.04T或更薄的板材作为基板；另外SD卡、指纹识别产品、SIM卡、EMMC、CSP等类型的产品也对0.04T及以下厚度的薄板有越来越强的需求。但是目前PCB制作行业中对于此类薄板，其板边四周的韧性与刚性较差，会影响到其通过水平线的能力，而且薄板在经过滚轮前，上下两个滚轮相互接触的，当薄板经过滚轮时，需要先撑开滚轮，这时薄板和滚轮之间的摩擦力是比较大的，容易产生破损导致板裂；同时由于受到设备以及工艺的限制，加上PCB板的制造流程与工艺较长，整个过程需要多次通过水平线，如显影、蚀刻、清洗等流程；因此，目前主要采用治具或通过设备改造来解决上述问题。但是采用治具需要手动进行薄板的操作，手动操作需要增加人员，且手动操作对于超薄板(Core 0.035mm铜厚2/2um)易产生折损，不利于量产转化；而设备改造费用高，并且设备改造后的技术程度对于薄板的改善作用不大，具体提升的空间较小，设备改造后的良率只达到70％，因此一般不采用以上办法。综上，目前对于此规格的薄板难以应对量产。
发明内容
针对现有技术的不足，本发明的第一目的是为了提供一种封装基板及其 制作方法，通过增加板边四周的韧性与刚性，从而提升薄板通过水平线的能力，同时能够避免其在与滚轮发生碰撞时产生破损而导致板裂的情况发生。
本发明的第二目的是为了提供一种封装基板的制作方法，能够在不采用治具以及不进行设备改造的前提下，通过流程优化，可实现薄板的量产，并且保证较好的良品率。
为实现上述目的，本发明采用如下技术方案：
一种封装基板，包括基板，其特征在于：所述基板的厚度≤60μm，所述基板的上表面和/或下表面的四周边缘处设有边框。
作为优选，所述基板的厚度记为H1，边框的厚度记为H2，当H1≤35μm，H2＝H1×0.45；当35μm<H1≤60μm，H2＝H1×0.35；所述基板的宽度记为W1,边框的内框与外框之间的距离为W2，W2＝W1×0.3。
作为优选，所述边框采用丝印的方法制作而成丝印树脂边框；所述丝印树脂边框的厚度为15-25μm；所述丝印树脂边框的内框与外框之间的距离为10-20mm。
作为优选，所述边框为采用电镀的方法制作而成镀铜边框或镀镍边框；所述镀镀铜边框或镀镍边框的厚度为10-20μm，所述镀铜边框或镀镍边框的内框与外框之间的距离为10-20mm。
作为优选，所述基板为PCB板。
一种封装基板的制作方法，其特征在于，包括以下步骤:
1)提供一块厚度≤60μm的基板；
2)在所述基板的上表面和/或下表面的四周边缘处采用丝印的方法制作得到丝印树脂边框。
作为优选，步骤2中，丝印的相关参数如下：网版目数为110-130目；固 化参数：柜式烘箱中温度为140-160℃，时间为25-35min；作为优选，树脂类型为山荣化学株式会社生产的PHP 900IR6PH(也可采用其他类型树脂)。
一种封装基板的制作方法，其特征在于，包括以下步骤:
1)提供一块厚度≤60μm的基板；
2)贴干膜：在步骤1)的所述基板的上表面和/或下表面贴一层干膜；
3)曝光显影：将步骤2)得到的贴有干膜的基板进行曝光显影形成边框状的空白区；
4)电镀：在步骤3)得到的基板的上表面和/或下表面的边框状的空白区进行电镀，使得基板的上表面和/或下表面的四周边缘处形成镀铜边框或镀镍边框；
5)退膜：将步骤4)得到的基板上位于镀铜边框或镀镍边框以外位置上的干膜去除。
作为优选，
步骤2)贴干膜的参数控制如下：温度：100-120℃，压力：0.4-0.6MPa，贴膜速度:1.5-2.5m/min；
步骤3)曝光显影的参数：Na2CO3的浓度：8-12g/L；pH值：10.5；温度：30±2℃；
步骤4)电镀的参数：电流密度：0.5-1.0ASD，时间：50-80min；
步骤5)退膜的参数：NaOH的浓度：20-30g/l；退膜压力：2.40±0.1kg/cm2；温度：50±2℃。
作为优选，所述镀铜边框或镀镍边框的厚度为10-20μm，所述镀铜边框或镀镍边框的内框与外框之间的距离为10-20mm。
作为优选，步骤5)完成后，还依次包括以下步骤：激光钻孔、除胶、沉 铜、电镀填孔、干膜前处理、贴膜、曝光、DES、AOI、阻焊、电镀软金、AFVI(自动外观检查)、人工检查、烘烤、包装、出货。
本发明的有益效果在于：
1、本发明所述基板的厚度≤60μm，所述基板的上表面和/或下表面的四周边缘处设有边框，通过增加板边四周的韧性与刚性，从而提升薄板通过水平线的能力，同时能够避免其在与滚轮发生碰撞时产生破损而导致板裂的情况发生。
2、本发明所述边框为采用电镀的方法制作而成镀铜边框或镀镍边框；所述镀铜边框或镀镍边框的厚度为10-20μm，所述镀铜边框或镀镍边框的内框与外框之间的距离为10-20mm。当镀铜边框或镀镍边框的厚度小于10μm，对于薄板良率不起作用，当其大于10μm以上改善作用明显，同时当其厚度大于20μm时，对于后续进行的贴干膜处理会有影响，容易在导致贴膜不牢。
3、本发明所述的封装基板的制作方法，能够在不采用治具以及不进行设备改造的前提下，通过流程优化，即所述边框采用丝印的方法制作而成丝印树脂边框，或者是所述边框为采用电镀的方法制作而成镀铜边框或镀镍边框，可实现薄板的量产，并且保证较好的良品率。
附图说明
图1为本发明实施例1的封装基板的结构示意图。
图2为本发明实施例1的封装基板的制作工艺的流程示意图。
图3为本发明实施例1的封装基板的制作工艺的流程示意图。
其中，1、基板；2、边框；21、丝印树脂边框；22、镀铜边框；3、干膜。
具体实施方式
下面，结合附图以及具体实施方式，对本发明做进一步描述：
实施例1：
参照图1，本实施例提供一种封装基板，包括基板1，所述基板1的厚度50μm，所述基板1的上表面和下表面的四周边缘处设有边框2。所述基板为PCB板。
参照图2，本实施例提供一种封装基板的制作方法，包括以下步骤:
1)提供一块厚度50μm的基板；基板的宽为415mm，长为510mm；
2)在所述基板的上表面和/或下表面的四周边缘处采用丝印的方法制作得到丝印树脂边框21。
作为优选，步骤2中，丝印的相关参数如下：网版目数为120目；固化参数：柜式烘箱中温度为150℃，时间为30min；丝印树脂边框的厚度为15-25μm；丝印树脂边框的内框与外框之间的距离为10-20mm。作为优选，树脂类型为山荣化学株式会社生产的PHP 900IR6PH(也可采用其他类型树脂)。
实施例2：
参照图3，本实施例提供一种封装基板的制作方法，包括以下步骤:
1)提供一块厚度50μm的基板1；基板的宽为415mm，长为510mm；
2)贴干膜：在步骤1)的所述基板的上表面和下表面贴一层干膜3；贴干膜的参数控制如下：温度：100-120℃，压力：0.4-0.6MPa，贴膜速度:1.5-2.5m/min；
3)曝光显影：将步骤2)得到的贴有干膜的基板进行曝光显影形成边框状的空白区；曝光显影的参数：Na2CO3的浓度：8-12g/L；pH值：10.5；温度：30±2℃；
4)电镀：在步骤3)得到的基板的上表面和/或下表面边框状的空白区进行电镀，使得基板的上表面和/或下表面的四周边缘处形成镀铜边框22；电镀的参数：电流密度：0.5-1.0ASD，时间：50-80min；
5)退膜：将基板上位于镀铜边框22以外位置上的干膜去除；参数：NaOH的浓度：20-30g/l；退膜压力：2.40±0.1kg/cm2；温度：50±2℃。
作为优选，所述镀铜边框或镀镍边框的厚度为10μm，所述镀铜边框或镀镍边框的内框与外框之间的距离为10mm。
实施例3：
本实施例的特点是：实施例2的封装基板的制作方法中，步骤5)完成后，还依次包括以下步骤：激光钻孔、除胶、沉铜、电镀填孔、干膜前处理、贴膜、曝光、DES、AOI、阻焊、电镀软金、AFVI(自动外观检查)、人工检查、烘烤、包装、出货。其它与实施例2相同。
实施例4：
本实施例的特点：实施例2的封装基板的制作方法中，所述基板的厚度为40μm，所述镀铜边框或镀镍边框的厚度为15μm，所述镀铜边框或镀镍边框的内框与外框之间的距离为15mm。其它与实施例2相同。
实施例5：
本实施例的特点：实施例2的封装基板的制作方法中，所述基板的厚度为30μm，所述镀铜边框或镀镍边框的厚度为20μm，所述镀铜边框或镀镍边框的内框与外框之间的距离为20mm。其它与实施例2相同。
实施例6：
本实施例的特点：一种封装基板，包括基板1，所述基板1的厚度50μm，所述基板1的上表面的四周边缘处设有边框2。所述基板为PCB板。其它与 实施例1或2相同。
实施例7：
本实施例的特点：一种封装基板，包括基板1，所述基板1的厚度50μm，所述基板1的下表面的四周边缘处设有边框2。所述基板为PCB板。其它与实施例1或2相同。
采用治具：采用治具需要手动进行薄板的操作，手动操作增加人员，且手动操作对于超薄板(Core 0.035mm铜厚2/2um)易产生折损，不利于量产转化；
设备改造：设备改造费用高，并且设备改造后的技术程度对于薄板的改善作用不大，具体提升的空间较小，设备改造后的良率只达到70％，因此一般不采用以上办法。
而采用本发明实施例所得到的封装基板，能够大幅度提升薄板通过水平线的能力，可有效应对薄板生产，并且提升薄板的制作能力达到板厚(core20um，铜厚2/2um)，良品率达到95％以上。
对于本领域的技术人员来说，可根据以上描述的技术方案以及构思，做出其它各种相应的改变以及变形，而所有的这些改变以及变形都应该属于本发明权利要求的保护范围之内。

Claims (10)

  1. 一种封装基板，包括基板，其特征在于：所述基板的厚度≤60μm，所述基板的上表面和/或下表面的四周边缘处设有边框。
  2. 根据权利要求1所述的封装基板，其特征在于：所述基板的厚度记为H1，边框的厚度记为H2，当H1≤35μm，H2＝H1×0.45；当35μm<H1≤60μm，H2＝H1×0.35；所述基板的宽度记为W1,边框的内框与外框之间的距离为W2，W2＝W1×0.3。
  3. 根据权利要求2所述的封装基板，其特征在于：所述边框为采用丝印的方法制作而成的丝印树脂边框；所述丝印树脂边框的厚度为15-25μm；所述丝印树脂边框的内框与外框之间的距离为10-20mm。
  4. 根据权利要求2所述的封装基板，其特征在于：所述边框为采用电镀的方法制作而成镀铜边框或镀镍边框；所述镀铜边框或镀镍边框的厚度为10-20μm，所述镀铜边框或镀镍边框的内框与外框之间的距离为10-20mm。
  5. 根据权利要求1所述的封装基板，其特征在于：所述基板为PCB板。
  6. 一种根据权利要求1、2、3、5任意一项所述的封装基板的制作方法，其特征在于，包括以下步骤:
    1)提供一块厚度≤60μm的基板；
    2)在所述基板的上表面和/或下表面的四周边缘处采用丝印的方法制作得到丝印树脂边框。
  7. 根据权利要求6所述的封装基板的制作方法，其特征在于：步骤2)中，丝印的相关参数如下：网版目数为110-130目；固化参数：柜式烘箱中温度为140-160℃，时间为25-35min。
  8. 一种根据权利要求1、2、4、5任意一项所述的封装基板的制作方法， 其特征在于，包括以下步骤:
    1)提供一块厚度≤60μm的基板；
    2)贴干膜：在步骤1)的所述基板的上表面和/或下表面贴一层干膜；
    3)曝光显影：将步骤2)得到的贴有干膜的基板进行曝光显影形成边框状的空白区；
    4)电镀：在步骤3)得到的基板的上表面和/或下表面的边框状的空白区进行电镀，使得基板的上表面和/或下表面的四周边缘处形成镀铜边框或镀镍边框；
    5)退膜：将步骤4)得到的基板上位于镀铜边框或镀镍边框以外位置上的干膜去除。
  9. 根据权利要求8所述的封装基板的制作方法，其特征在于：
    步骤2)贴干膜的参数：温度：100-120℃，压力：0.4-0.6MPa，贴膜速度:1.5-2.5m/min；
    步骤3)曝光显影的参数：Na2CO3的浓度：8-12g/L；pH值：10.5；温度：30±2℃；
    步骤4)电镀的参数：电流密度：0.5-1.0ASD，时间：50-80min；
    步骤5)退膜的参数：NaOH的浓度：20-30g/l；退膜压力：2.40±0.1kg/cm2；温度：50±2℃。
  10. 根据权利要求8所述的封装基板的制作方法，其特征在于：步骤5)完成后，还依次包括以下步骤：激光钻孔、除胶、沉铜、电镀填孔、干膜前处理、贴膜、曝光、DES、AOI、阻焊、电镀软金、自动外观检查、人工检查、烘烤、包装、出货。
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