WO2017222919A1 - Système de lithographie par ultraviolets extrêmes à lignes denses avec adaptation aux distorsions - Google Patents

Système de lithographie par ultraviolets extrêmes à lignes denses avec adaptation aux distorsions Download PDF

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Publication number
WO2017222919A1
WO2017222919A1 PCT/US2017/037786 US2017037786W WO2017222919A1 WO 2017222919 A1 WO2017222919 A1 WO 2017222919A1 US 2017037786 W US2017037786 W US 2017037786W WO 2017222919 A1 WO2017222919 A1 WO 2017222919A1
Authority
WO
WIPO (PCT)
Prior art keywords
scan
workpiece
parallel lines
stripe
axis
Prior art date
Application number
PCT/US2017/037786
Other languages
English (en)
Inventor
Michael B. Binnard
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/599,148 external-priority patent/US11099483B2/en
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2018565728A priority Critical patent/JP2019518246A/ja
Priority to US16/307,892 priority patent/US10712671B2/en
Priority to EP17815964.6A priority patent/EP3472672A4/fr
Priority to KR1020197001720A priority patent/KR102458400B1/ko
Priority to CN201780037914.7A priority patent/CN109690416B/zh
Priority to US15/629,353 priority patent/US10295911B2/en
Publication of WO2017222919A1 publication Critical patent/WO2017222919A1/fr
Priority to US16/379,010 priority patent/US10747117B2/en
Priority to US16/914,143 priority patent/US11067900B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Abstract

L'invention concerne un système (10) de lithographie par ultraviolets extrêmes qui crée un nouveau motif (330) comprenant une pluralité de lignes parallèles (332) compactées densément sur une pièce (22), le système (10) comprenant un élément (16) de formation de motifs; un système (12) d'éclairage à UVE qui dirige un faisceau (13B) d'ultraviolets extrêmes vers l'élément (16) de formation de motifs; un ensemble optique (18) de projection qui dirige le faisceau d'ultraviolets extrêmes diffracté sur l'élément (16) de formation de motifs vers la pièce (22) pour créer une première raie (364) de lignes généralement parallèles (332) pendant un premier balayage (365); et un système (24) de commande. La pièce (22) comprend un motif existant (233) qui est distordu. Le système (24) de commande règle sélectivement un paramètre de commande pendant le premier balayage (365) de telle façon que la première raie (364) soit distordue de manière à recouvrir plus exactement la partie du motif existant (233) positionnée sous la première raie (364).
PCT/US2017/037786 2016-05-19 2017-06-15 Système de lithographie par ultraviolets extrêmes à lignes denses avec adaptation aux distorsions WO2017222919A1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2018565728A JP2019518246A (ja) 2016-06-20 2017-06-15 歪み整合のための密集ライン極紫外線リソグラフィシステム
US16/307,892 US10712671B2 (en) 2016-05-19 2017-06-15 Dense line extreme ultraviolet lithography system with distortion matching
EP17815964.6A EP3472672A4 (fr) 2016-06-20 2017-06-15 Système de lithographie par ultraviolets extrêmes à lignes denses avec adaptation aux distorsions
KR1020197001720A KR102458400B1 (ko) 2016-06-20 2017-06-15 왜곡 매칭을 갖는 조밀 라인 극자외선 리소그래피 시스템
CN201780037914.7A CN109690416B (zh) 2016-06-20 2017-06-15 具有畸变匹配的密集线极紫外光刻系统
US15/629,353 US10295911B2 (en) 2016-05-19 2017-06-21 Extreme ultraviolet lithography system that utilizes pattern stitching
US16/379,010 US10747117B2 (en) 2016-05-19 2019-04-09 Extreme ultraviolet lithography system that utilizes pattern stitching
US16/914,143 US11067900B2 (en) 2016-05-19 2020-06-26 Dense line extreme ultraviolet lithography system with distortion matching

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US201662352545P 2016-06-20 2016-06-20
US62/352,545 2016-06-20
US201662353245P 2016-06-22 2016-06-22
US62/353,245 2016-06-22
US201762504908P 2017-05-11 2017-05-11
US62/504,908 2017-05-11
US15/599,148 US11099483B2 (en) 2016-05-19 2017-05-18 Euv lithography system for dense line patterning
US15/599,197 US10890849B2 (en) 2016-05-19 2017-05-18 EUV lithography system for dense line patterning
US15/599,148 2017-05-18
US15/599,197 2017-05-18

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
US15/599,148 Continuation-In-Part US11099483B2 (en) 2016-05-19 2017-05-18 Euv lithography system for dense line patterning
US15/599,197 Continuation-In-Part US10890849B2 (en) 2016-05-19 2017-05-18 EUV lithography system for dense line patterning

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US16/307,892 A-371-Of-International US10712671B2 (en) 2016-05-19 2017-06-15 Dense line extreme ultraviolet lithography system with distortion matching
US15/629,353 Continuation-In-Part US10295911B2 (en) 2016-05-19 2017-06-21 Extreme ultraviolet lithography system that utilizes pattern stitching
US16/914,143 Continuation US11067900B2 (en) 2016-05-19 2020-06-26 Dense line extreme ultraviolet lithography system with distortion matching

Publications (1)

Publication Number Publication Date
WO2017222919A1 true WO2017222919A1 (fr) 2017-12-28

Family

ID=60783558

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2017/037786 WO2017222919A1 (fr) 2016-05-19 2017-06-15 Système de lithographie par ultraviolets extrêmes à lignes denses avec adaptation aux distorsions

Country Status (5)

Country Link
EP (1) EP3472672A4 (fr)
JP (1) JP2019518246A (fr)
KR (1) KR102458400B1 (fr)
CN (1) CN109690416B (fr)
WO (1) WO2017222919A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114217512B (zh) * 2022-01-07 2022-11-29 北京理工大学 极紫外光刻投影曝光光学系统

Citations (6)

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US5739899A (en) * 1995-05-19 1998-04-14 Nikon Corporation Projection exposure apparatus correcting tilt of telecentricity
US20050024610A1 (en) 2002-06-10 2005-02-03 Nikon Corporation Exposure apparatus and stage device, and device manufacturing method
US20070013894A1 (en) 2005-07-13 2007-01-18 Asml Netherlands B.V. Stage apparatus, lithographic apparatus and device manufacturing method
US20080128642A1 (en) 2006-12-01 2008-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8133661B2 (en) * 2009-10-21 2012-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Superimpose photomask and method of patterning
US20150042975A1 (en) 2010-09-28 2015-02-12 Carl Zeiss Smt Gmbh Projection exposure tool for microlithography and method for microlithographic imaging

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JP2000021763A (ja) * 1998-06-30 2000-01-21 Canon Inc 露光方法及び露光装置
JP4894899B2 (ja) * 2004-08-25 2012-03-14 セイコーエプソン株式会社 微細構造体の製造方法
US20090011368A1 (en) * 2005-02-25 2009-01-08 Yutaka Ichihara Exposure Method and Apparatus, and Electronic Device Manufacturing Method
US7582413B2 (en) * 2005-09-26 2009-09-01 Asml Netherlands B.V. Substrate, method of exposing a substrate, machine readable medium
US8934084B2 (en) * 2006-05-31 2015-01-13 Asml Holding N.V. System and method for printing interference patterns having a pitch in a lithography system
TWI441239B (zh) * 2006-12-12 2014-06-11 Asml Netherlands Bv 製造微影元件的方法、微影單元及電腦程式產品
SG153748A1 (en) * 2007-12-17 2009-07-29 Asml Holding Nv Lithographic method and apparatus
NL1036349A1 (nl) * 2007-12-28 2009-06-30 Asml Holding Nv Scanning EUV interference imaging for extremely high resolution patterning.
JP2009253209A (ja) * 2008-04-10 2009-10-29 Canon Inc 露光装置及びデバイス製造方法
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JP2011249631A (ja) * 2010-05-28 2011-12-08 Nikon Corp 露光方法、パターン形成方法、及びデバイス製造方法
JP5838594B2 (ja) * 2011-05-27 2016-01-06 株式会社ニコン ダブルパターニング最適化方法及びシステム、パターン形成方法、露光装置、並びにデバイス製造方法

Patent Citations (8)

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US5739899A (en) * 1995-05-19 1998-04-14 Nikon Corporation Projection exposure apparatus correcting tilt of telecentricity
US20050024610A1 (en) 2002-06-10 2005-02-03 Nikon Corporation Exposure apparatus and stage device, and device manufacturing method
US7068350B2 (en) * 2002-06-10 2006-06-27 Nikon Corporation Exposure apparatus and stage device, and device manufacturing method
US20070013894A1 (en) 2005-07-13 2007-01-18 Asml Netherlands B.V. Stage apparatus, lithographic apparatus and device manufacturing method
US7671970B2 (en) * 2005-07-13 2010-03-02 Asml Netherlands B.V. Stage apparatus with two patterning devices, lithographic apparatus and device manufacturing method skipping an exposure field pitch
US20080128642A1 (en) 2006-12-01 2008-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8133661B2 (en) * 2009-10-21 2012-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Superimpose photomask and method of patterning
US20150042975A1 (en) 2010-09-28 2015-02-12 Carl Zeiss Smt Gmbh Projection exposure tool for microlithography and method for microlithographic imaging

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Title
See also references of EP3472672A4

Also Published As

Publication number Publication date
EP3472672A1 (fr) 2019-04-24
CN109690416A (zh) 2019-04-26
EP3472672A4 (fr) 2020-03-04
KR20190020088A (ko) 2019-02-27
CN109690416B (zh) 2021-12-21
KR102458400B1 (ko) 2022-10-24
JP2019518246A (ja) 2019-06-27

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