WO2017219416A1 - 3d微发光二极管显示装置 - Google Patents

3d微发光二极管显示装置 Download PDF

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Publication number
WO2017219416A1
WO2017219416A1 PCT/CN2016/090119 CN2016090119W WO2017219416A1 WO 2017219416 A1 WO2017219416 A1 WO 2017219416A1 CN 2016090119 W CN2016090119 W CN 2016090119W WO 2017219416 A1 WO2017219416 A1 WO 2017219416A1
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Prior art keywords
light emitting
micro light
emitting diode
diode display
micro
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PCT/CN2016/090119
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English (en)
French (fr)
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陈黎暄
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深圳市华星光电技术有限公司
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Priority to US15/116,219 priority Critical patent/US20180203245A1/en
Publication of WO2017219416A1 publication Critical patent/WO2017219416A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B30/00—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images
    • G02B30/20—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes
    • G02B30/26—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type
    • G02B30/27—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type involving lenticular arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/01—Head-up displays
    • G02B27/017—Head mounted
    • G02B27/0172—Head mounted characterised by optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B30/00—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images
    • G02B30/20—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes
    • G02B30/22—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the stereoscopic type
    • G02B30/25—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the stereoscopic type using polarisation techniques
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3083—Birefringent or phase retarding elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/01—Head-up displays
    • G02B27/017—Head mounted
    • G02B2027/0178—Eyeglass type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a 3D micro light emitting diode display device.
  • Flat display devices are widely used in various consumer electronics such as mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktop computers, etc. due to their high image quality, power saving, thin body and wide application range. Products have become the mainstream in display devices.
  • a micro LED ( ⁇ LED) display is a display that realizes image display by using a high-density and small-sized LED array integrated on one substrate as a display pixel.
  • each pixel Addressable, individually driven and lit can be seen as a miniature version of the outdoor LED display, reducing the pixel distance from millimeters to micrometers, and the ⁇ LED display is the same as the Organic Light-Emitting Diode (OLED) display.
  • OLED Organic Light-Emitting Diode
  • Self-illuminating display but compared with OLED display, ⁇ LED display has the advantages of better material stability, longer life, no image imprinting, etc., and is considered to be the biggest competitor of OLED display.
  • Micro Transfer Printing technology is currently the mainstream method for preparing ⁇ LED display devices.
  • the specific preparation process is as follows: First, a micro light-emitting diode is grown on a sapphire-based substrate, and then laser lift-off (LLO) is used to micro-transfer.
  • LLO laser lift-off
  • the LED bare chip is separated from the sapphire substrate, and then a patterned polydimethylsiloxane (PDMS) transfer head is used to adsorb the micro LED bare chip from the sapphire substrate, and The PDMS transfer head is aligned with the receiving substrate, and then the micro light emitting diode bare chip adsorbed by the PDMS transfer head is attached to a preset position on the receiving substrate, and then the PDMS transfer head is peeled off, thereby completing the micro light emitting diode bare chip. Transfer to the receiving substrate to produce a ⁇ LED display device.
  • PDMS polydimethylsiloxane
  • the one-dimensional metal grating is a periodic metal and dielectric layer arrangement structure, which comprises a plurality of metal strips arranged in parallel, and spaces are formed between the metal strips, which have a birefringence effect for a transverse magnetic field (Transverse Magnetic, The TM) and the Transverse Electric (TE) state light field have a high extinction ratio, and can significantly reflect the TE light parallel to the alignment direction of the metal wires through the TM light perpendicular to the alignment direction of the metal wires, and has a polarizing function. Can be used as a polarizer.
  • Transverse Magnetic, The TM Transverse Magnetic
  • TE Transverse Electric
  • a two-dimensional metal grating is also proposed in the prior art, which comprises: a plurality of rectangular blocks arranged in an array, each matrix block being between rows and rows, between columns and columns Formed with a gap, for a two-dimensional metal grating, it can not only have a polarizing function, but also can construct a quarter-wave plate using its birefringence effect, and the fast axis of the quarter-wave plate constructed by it The slow axis can change as the design of the grating changes.
  • the present invention provides a 3D micro light emitting diode display, comprising: a substrate, a plurality of micro light emitting diodes arranged in an array on the substrate, and a polarizing layer disposed on the plurality of micro light emitting diodes And a quarter-wave layer disposed on the polarizing layer;
  • the polarizing layer is a one-dimensional metal grating structure, and the quarter-wave layer is a two-dimensional metal grating structure;
  • the 1/4 wave plate layer includes a plurality of 1/4 wave plate regions arranged in sequence, and the fast axes of the adjacent two 1/4 wave plate regions are perpendicular to each other;
  • the angle between the polarization direction of the polarizing layer and the fast axis of each quarter-wave plate region is 45 degrees.
  • Each 1/4 wave plate area corresponds to a row of micro light emitting diodes.
  • Each quarter wave area corresponds to a column of micro light emitting diodes.
  • Each 1/4 wave area corresponds to a micro light emitting diode.
  • the two-dimensional metal grating structure has a height of 50 to 300 nm.
  • the two-dimensional metal grating structure has a period of 40 to 300 nm in both dimensions.
  • the plurality of micro light emitting diodes include: a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode.
  • the micro light emitting diode is prepared by a micro transfer method.
  • the 3D micro light emitting diode display is a head mounted virtual reality display or a glasses type virtual reality display.
  • the present invention also provides a 3D micro light emitting diode display, comprising: a substrate, a plurality of micro light emitting diodes arranged in an array on the substrate, a polarizing layer disposed on the plurality of micro light emitting diodes, and a a quarter-wave layer on the polarizing layer;
  • the polarizing layer is a one-dimensional metal grating structure, and the quarter-wave layer is a two-dimensional metal grating structure;
  • the 1/4 wave plate layer includes a plurality of 1/4 wave plate regions arranged in sequence, and the fast axes of the adjacent two 1/4 wave plate regions are perpendicular to each other;
  • the angle between the polarization direction of the polarizing layer and the fast axis of each quarter-wave plate region is 45 degrees;
  • the plurality of micro light emitting diodes comprise: red light micro light emitting diode, green light micro light emitting Diodes, and blue light emitting diodes;
  • micro light-emitting diode is prepared by a micro-transfer method
  • the 3D micro light emitting diode display is a head mounted virtual reality display or a glasses type virtual reality display.
  • the present invention provides a 3D micro light-emitting diode display by adding a one-dimensional metal grating structure and a two-dimensional metal grating structure stacked on a micro light-emitting diode display panel, and realizing a one-dimensional metal grating structure
  • the light emitted by the micro-light-emitting diode display panel is polarized to generate linearly polarized light
  • the function of the quarter-wave plate is realized by the two micro-metal grating structure
  • the linearly polarized light generated by the one-dimensional metal grating is processed to generate right-handed circular polarization.
  • Light and right-handed circularly polarized light to achieve 3D display giving full play to the advantages of high-resolution, high-brightness, and miniaturization of the micro-light-emitting diode display panel to achieve high-quality 3D display.
  • FIG. 1 is a schematic cross-sectional view of a 3D micro light emitting diode display of the present invention
  • FIG. 2 is a top plan view of a first embodiment of a 3D micro light emitting diode display of the present invention
  • FIG. 3 is a top plan view of a second embodiment of a 3D micro light emitting diode display of the present invention.
  • FIG. 4 is a top plan view of a third embodiment of a 3D micro light emitting diode display of the present invention.
  • the present invention provides a 3D micro light emitting diode display, comprising: a substrate 1 , a plurality of micro light emitting diodes 2 arranged on the substrate 1 , and 2 micro light emitting diodes 2 disposed on the plurality of micro light emitting diodes 2 .
  • the polarizing layer 3 and the quarter-wave layer 4 provided on the polarizing layer 3.
  • the substrate 1 and the plurality of micro light-emitting diodes 2 on the substrate 1 together constitute a 2D micro light-emitting diode display panel.
  • the polarizing layer 3 is a one-dimensional metal grating structure
  • the quarter-wave layer 4 is a two-dimensional metal grating structure.
  • the 1/4 wave plate layer 4 is divided into a plurality of 1/4 wave plate regions 41 arranged in sequence, and adjacent The fast axes of the two quarter wave regions 41 are perpendicular to each other.
  • the angle between the polarization direction of the polarizing layer 3 and the fast axis of each quarter-wave plate region 41 is 45 degrees, and the light emitted by the micro-light-emitting diode 2 passes through the polarizing layer 3 to generate a Linearly polarized light, the angle between the light vector of the linearly polarized light and the fast axis of each of the quarter-wave plate regions 41 is 45 degrees, which are respectively generated by the two quarter-wave regions 41 of the fast axis which are perpendicular to each other.
  • Right-handed circularly polarized light, and left-handed circularly polarized light are respectively generated by the two quarter-wave regions 41 of the fast axis which are perpendicular to each other.
  • the viewer can view the three-dimensional (3D) stereoscopic image after wearing the polarized 3D glasses.
  • a polarizing plate similar to polarized 3D glasses
  • whose left and right polarization directions are perpendicular to each other can be added in the outgoing direction of the 3D micro light emitting diode display, so that the viewer can view the left eye and the right eye.
  • Different images enable naked-eye 3D display.
  • each of the quarter-wave plate regions 41 in the quarter-wave plate layer 4 can be differently designed as needed.
  • each quarter-wavelength region 41 corresponds to a row of micro-light-emitting diodes 2, that is, the fast axis of the quarter-wave layer 4 corresponding to the same row of micro-light-emitting diodes 2.
  • the fast axes of the quarter-wave layer 4 corresponding to the adjacent two rows of micro-light-emitting diodes 2 are perpendicular to each other, thereby generating right-handed circularly polarized light and left-handed circular polarization between adjacent two rows of micro-light-emitting diodes 2. Light to achieve 3D display.
  • each quarter-wavelength region 41 corresponds to a column of micro-light-emitting diodes 2, that is, the fast axis of the quarter-wave layer 4 corresponding to the same column of micro-light-emitting diodes 2.
  • the fast axes of the quarter-wave layers 4 corresponding to the adjacent two columns of micro-light-emitting diodes 2 are perpendicular to each other, thereby generating right-handed circularly polarized light and left-handed circles between adjacent two columns of micro-light-emitting diodes 2. Polarized light to achieve 3D display.
  • each of the 1/4 wave plate regions 41 corresponds to one micro light emitting diode 2, that is, the fast axis of the 1/4 wave plate layer 4 corresponding to the same micro light emitting diode 2.
  • the fast axes of the 1/4 wave plate layers 4 corresponding to the adjacent two micro light-emitting diodes 2 are perpendicular to each other, thereby generating right-handed circularly polarized light and left-handed circles between adjacent two micro-light-emitting diodes 2. Polarized light to achieve 3D display.
  • the two-dimensional metal grating structure has a height of 50 to 300 nm, and the two-dimensional metal grating structure has a period of 40 to 300 nm in both dimensions.
  • the plurality of micro light emitting diodes 2 include: a red light micro light emitting diode R, a green light micro light emitting diode G, and a blue light emitting diode B, and the color display is realized by using three primary colors of red, green and blue.
  • the micro light-emitting diode 2 is prepared by a micro-transfer method, which is: firstly, a primary substrate is provided, a plurality of micro-light-emitting diodes 2 are generated on the original substrate, and then passed through a micro-transfer transfer head. The plurality of micro light-emitting diodes 2 are transferred onto the substrate 1.
  • the 3D micro light emitting diode display may be a head mounted virtual reality/augmented reality display or a glasses type virtual reality/augmented reality display.
  • the present invention provides a 3D micro-light-emitting diode display by adding a one-dimensional metal grating structure and a two-dimensional metal grating structure stacked on a micro light-emitting diode display panel, and realizing the micro-dimensional through a one-dimensional metal grating structure.
  • the light emitted by the LED display panel is polarized to generate linearly polarized light
  • the function of the quarter-wave plate is realized by the two-micro metal grating structure
  • the linearly polarized light generated by the one-dimensional metal grating is processed to generate right-handed circularly polarized light.
  • right-handed circularly polarized light to achieve 3D display, giving full play to the advantages of high-resolution, high-brightness, and miniaturization of the micro-light-emitting diode display panel to achieve high-quality 3D display.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Testing, Inspecting, Measuring Of Stereoscopic Televisions And Televisions (AREA)

Abstract

一种3D微发光二极管显示器，通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构(3)和二维金属光栅结构(4)，通过一维金属光栅结构(3)实现对微发光二极管显示面板发出的光线进行偏光，产生线偏振光，通过二维金属光栅结构(4)实现1/4波片的功能，对一维金属光栅(3)产生的线偏振光再进行处理，产生右旋圆偏振光和左旋圆偏振光，以实现3D显示，充分发挥微发光二极管显示面板高分辨率、高亮度、和小型化的优势，实现高品质的3D显示。

Description

3D微发光二极管显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种3D微发光二极管显示装置。
背景技术
平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。
一维金属光栅是一种周期性的金属与介质层排布结构，其包括多个平行排列的金属条，各个金属条之间形成有间隔，其具有双折射效应，对于横向磁场(Transverse Magnetic，TM)和横向电场(Transverse Electric，TE)态光场具有很高的消光比，能够显著地透过垂直于金属线排列方向的TM光而反射平行于金属线排列方向的TE光，具有偏光功能，可以作为偏光片使用。不同于一维金属光栅，现有技术中还提出了一种二维金属光栅，其包括：多个阵列排布的矩形块，各个矩阵块在行与行之间、列与列之间都 形成有间隔，对于二维金属光栅，其不仅可以具有偏光功能，还可以利用其双折射效应构建1/4波片(Quarter-wave plate)，并且其构建的1/4波片的快轴和慢轴可以随光栅设计的改变而改变。
发明内容
本发明的目的在于提供一种3D微发光二极管显示器，能够实现3D显示，提升3D微发光二极管显示器的显示品质。
为实现上述目的，本发明提供了一种3D微发光二极管显示器，包括：基板、设于所述基板上阵列排布的多个微发光二极管、设于所述多个微发光二极管上的偏光层、及设于所述偏光层上的1/4波片层；
所述偏光层为一维金属光栅结构，所述1/4波片层为二维金属光栅结构；
所述1/4波片层包括依次排列的多个1/4波片区，相邻的两个1/4波片区的快轴相互垂直；
所述偏光层的偏振方向与各个1/4波片区的快轴之间的夹角均为45度。
每一个1/4波片区对应一行微发光二极管。
每一个1/4波片区对应一列微发光二极管。
每一个1/4波片区对应一个微发光二极管。
所述二维金属光栅结构的高度为50至300nm。
所述二维金属光栅结构在两个维度上的周期均为40至300nm。
所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。
所述微发光二极管采用微转印的方法制备。
所述3D微发光二极管显示器为头戴式虚拟现实显示器、或眼镜式虚拟现实显示器。
本发明还提供一种3D微发光二极管显示器，包括：基板、设于所述基板上阵列排布的多个微发光二极管、设于所述多个微发光二极管上的偏光层、及设于所述偏光层上的1/4波片层；
所述偏光层为一维金属光栅结构，所述1/4波片层为二维金属光栅结构；
所述1/4波片层包括依次排列的多个1/4波片区，相邻的两个1/4波片区的快轴相互垂直；
所述偏光层的偏振方向与各个1/4波片区的快轴之间的夹角均为45度；
其中，所述多个微发光二极管包括：红光微发光二极管、绿光微发光 二极管、及蓝光微发光二极管；
其中，所述微发光二极管采用微转印的方法制备；
其中，所述3D微发光二极管显示器为头戴式虚拟现实显示器、或眼镜式虚拟现实显示器。
本发明的有益效果：本发明提供了一种3D微发光二极管显示器，通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构，通过一维金属光栅结构实现对微发光二极管显示面板发出的光线进行偏光，产生线偏振光，通过二微金属光栅结构实现1/4波片的功能，对一维金属光栅产生的线偏振光再进行处理，产生右旋圆偏振光和右旋圆偏振光，以实现3D显示，充分发挥微发光二极管显示面板高分辨率、高亮度、和小型化的优势，实现高品质的3D显示。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的3D微发光二极管显示器的剖面示意图；
图2为本发明的3D微发光二极管显示器的第一实施例的俯视示意图；
图3为本发明的3D微发光二极管显示器的第二实施例的俯视示意图；
图4为本发明的3D微发光二极管显示器的第三实施例的俯视示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种3D微发光二极管显示器，包括：基板1、设于所述基板1上阵列排布的多个微发光二极管2、设于所述多个微发光二极管2上的偏光层3、及设于所述偏光层3上的1/4波片层4。
具体地，所述基板1及基板1上的多个微发光二极管2共同组成了一个2D的微发光二极管显示面板。所述偏光层3为一维金属光栅结构，所述1/4波片层4为二维金属光栅结构。
进一步地，通过对所述1/4波片层4的二维金属光栅结构的设计，使得所述1/4波片层4分为依次排列的多个1/4波片区41，并且相邻的两个1/4波片区41的快轴相互垂直。
需要说明的是，所述偏光层3的偏振方向与各个1/4波片区41的快轴之间的夹角均为45度，所述微发光二极管2发出的光线经过偏光层3后产生一个线偏振光，该线偏振光的光矢量与各个1/4波片区41的快轴之间的夹角均为45度，其通过快轴相互垂直的两个1/4波片区41后分别产生右旋圆偏振光、和左旋圆偏振光。
此时，观看者再佩戴上偏光式3D眼镜后即可观看到三维(Three Dimensional，3D)立体图像。可以理解的是，也可以在该3D微发光二极管显示器的出射方向上增设左、右偏振方向互相垂直的的偏振片(类似于偏光式3D眼镜)，使得观看者左眼和右眼的观看到不同的图像，实现裸眼3D显示。
具体地，所述1/4波片层4中的各个1/4波片区41的大小和排列方式可以根据需要进行不同的设计。
请参阅图2，在本发明的第一实施例中，每一个1/4波片区41对应一行微发光二极管2，也即同一行微发光二极管2对应的1/4波片层4的快轴相同，相邻的两行微发光二极管2对应的1/4波片层4的快轴相互垂直，从而在相邻的两行微发光二极管2之间产生右旋圆偏振光、和左旋圆偏振光，以实现3D显示。
请参阅图3，在本发明的第二实施例中，每一个1/4波片区41对应一列微发光二极管2，也即同一列微发光二极管2对应的1/4波片层4的快轴相同，相邻的两列微发光二极管2对应的1/4波片层4的快轴相互垂直，从而在在相邻的两列微发光二极管2之间产生右旋圆偏振光、和左旋圆偏振光，以实现3D显示。
请参阅图4，在本发明的第三实施例中，每一个1/4波片区41对应一个微发光二极管2，也即同一个微发光二极管2对应的1/4波片层4的快轴相同，相邻的两个微发光二极管2对应的1/4波片层4的快轴相互垂直，从而在在相邻的两个微发光二极管2之间产生右旋圆偏振光、和左旋圆偏振光，以实现3D显示。
可选地，所述二维金属光栅结构的高度为50至300nm，所述二维金属光栅结构在两个维度上的周期均为40至300nm。
优选地，所述多个微发光二极管2包括：红光微发光二极管R、绿光微发光二极管G、及蓝光微发光二极管B，利用红绿蓝三原色实现色彩显示。
具体地，所述微发光二极管2采用微转印的方法制备，具体过程为：首先提供一原生基板，在所述原生基板上生成多个微发光二极管2，再通过一微转印传送头将所述多个微发光二极管2转印到基板1上。
值得一提的是，所述3D微发光二极管显示器可以为头戴式虚拟现实/增强现实显示器、或眼镜式虚拟现实/增强现实显示器。
综上所述，本发明提供了一种3D微发光二极管显示器，通过在微发光二极管显示面板上增设层叠设置的一维金属光栅结构和二维金属光栅结构，通过一维金属光栅结构实现对微发光二极管显示面板发出的光线进行偏光，产生线偏振光，通过二微金属光栅结构实现1/4波片的功能，对一维金属光栅产生的线偏振光再进行处理，产生右旋圆偏振光和右旋圆偏振光，以实现3D显示，充分发挥微发光二极管显示面板高分辨率、高亮度、和小型化的优势，实现高品质的3D显示。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (15)

  1. 一种3D微发光二极管显示器，包括：基板、设于所述基板上阵列排布的多个微发光二极管、设于所述多个微发光二极管上的偏光层、及设于所述偏光层上的1/4波片层；
    所述偏光层为一维金属光栅结构，所述1/4波片层为二维金属光栅结构；
    所述1/4波片层包括依次排列的多个1/4波片区，相邻的两个1/4波片区的快轴相互垂直；
    所述偏光层的偏振方向与各个1/4波片区的快轴之间的夹角均为45度。
  2. 如权利要求1所述的3D微发光二极管显示器，其中，每一个1/4波片区对应一行微发光二极管。
  3. 如权利要求1所述的3D微发光二极管显示器，其中，每一个1/4波片区对应一列微发光二极管。
  4. 如权利要求1所述的3D微发光二极管显示器，其中，每一个1/4波片区对应一个微发光二极管。
  5. 如权利要求1所述的3D微发光二极管显示器，其中，所述二维金属光栅结构的高度为50至300nm。
  6. 如权利要求1所述的3D微发光二极管显示器，其中，所述二维金属光栅结构在两个维度上的周期均为40至300nm。
  7. 如权利要求1所述的3D微发光二极管显示器，其中，所述多个微发光二极管包括：红光微发光二极管、绿光微发光二极管、及蓝光微发光二极管。
  8. 如权利要求1所述的3D微发光二极管显示器，其中，所述微发光二极管采用微转印的方法制备。
  9. 如权利要求1所述的3D微发光二极管显示器，其中，所述3D微发光二极管显示器为头戴式虚拟现实显示器、或眼镜式虚拟现实显示器。
  10. 一种3D微发光二极管显示器，包括：基板、设于所述基板上阵列排布的多个微发光二极管、设于所述多个微发光二极管上的偏光层、及设于所述偏光层上的1/4波片层；
    所述偏光层为一维金属光栅结构，所述1/4波片层为二维金属光栅结构；
    所述1/4波片层包括依次排列的多个1/4波片区，相邻的两个1/4波片 区的快轴相互垂直；
    所述偏光层的偏振方向与各个1/4波片区的快轴之间的夹角均为45度；
    其中，所述多个微发光二极管包括：红光微发光二极管、绿光微发光二极管、及蓝光微发光二极管；
    其中，所述微发光二极管采用微转印的方法制备；
    其中，所述3D微发光二极管显示器为头戴式虚拟现实显示器、或眼镜式虚拟现实显示器。
  11. 如权利要求10所述的3D微发光二极管显示器，其中，每一个1/4波片区对应一行微发光二极管。
  12. 如权利要求10所述的3D微发光二极管显示器，其中，每一个1/4波片区对应一列微发光二极管。
  13. 如权利要求10所述的3D微发光二极管显示器，其中，每一个1/4波片区对应一个微发光二极管。
  14. 如权利要求10所述的3D微发光二极管显示器，其中，所述二维金属光栅结构的高度为50至300nm。
  15. 如权利要求10所述的3D微发光二极管显示器，其中，所述二维金属光栅结构在两个维度上的周期均为40至300nm。
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