WO2017215374A1 - 像素结构、显示器件及具有该显示器件的显示面板 - Google Patents

像素结构、显示器件及具有该显示器件的显示面板 Download PDF

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Publication number
WO2017215374A1
WO2017215374A1 PCT/CN2017/083773 CN2017083773W WO2017215374A1 WO 2017215374 A1 WO2017215374 A1 WO 2017215374A1 CN 2017083773 W CN2017083773 W CN 2017083773W WO 2017215374 A1 WO2017215374 A1 WO 2017215374A1
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Prior art keywords
insulating layer
electrode
layer
recess
protrusion
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PCT/CN2017/083773
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English (en)
French (fr)
Inventor
郭远辉
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京东方科技集团股份有限公司
合肥京东方光电科技有限公司
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Priority to US15/570,938 priority Critical patent/US20180224687A1/en
Publication of WO2017215374A1 publication Critical patent/WO2017215374A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures

Definitions

  • the present disclosure relates to the field of display, and in particular to a pixel structure, a display device, and a display panel having the same.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • the TFT-LCD can be classified into a vertical electric field type and a horizontal electric field type according to the direction of the electric field driving the liquid crystal, wherein the vertical electric field type TFT-LCD forms a pixel electrode on the array substrate and forms a common electrode on the color filter substrate; the horizontal electric field The TFT-LCD simultaneously forms a pixel electrode and a common electrode on the array substrate.
  • the horizontal electric field type TFT-LCD includes an In-Plane Switching (IPS) mode and a Fringe Field Switching (FFS) mode.
  • the FFS display mode is widely used in high-end display fields due to high transmittance and expanded viewing angle.
  • Embodiments of the present disclosure provide a pixel structure, an array substrate having the pixel structure, a display device, a display panel, and a method for fabricating the array substrate of the display device.
  • a pixel structure a first insulating layer, a first electrode layer composed of a first electrode, a second insulating layer, and a second electrode layer composed of a plurality of second electrodes,
  • the first electrode layer is disposed on the first insulating layer;
  • the second insulating layer is disposed On the first electrode layer;
  • the plurality of second electrodes are spaced apart on the second insulating layer, wherein at least one of the first electrode layer and the second electrode layer has a bump And at least one of the depressions.
  • each of the second electrodes has a protrusion or a recess.
  • the first electrode has a protrusion or a recess at a position corresponding to between two adjacent second electrodes.
  • the first electrode has a protrusion or a depression at a position corresponding to the second electrode.
  • a surface of the second insulating layer has at least one of a protrusion and a recess, and the second electrode conformally covers the second insulating layer to enable the The two electrodes have protrusions or depressions.
  • a surface of the first insulating layer has a protrusion or a recess at a position corresponding to between two adjacent second electrodes, the first electrode conformally covering the first The insulating layer is disposed such that the first electrode has a protrusion or a recess at a position corresponding to between two adjacent second electrodes.
  • a surface of the first insulating layer further has a protrusion or a recess at a position corresponding to the second electrode such that the first electrode further has a protrusion at a position corresponding to the second electrode Or hollow.
  • the second insulating layer conformally covers the first electrode such that the second insulating layer is at a position corresponding to the second electrode and two adjacent A position between the two electrodes has a protrusion or a recess; and the second electrode conformally covers the second insulating layer such that the second electrode has a protrusion or a recess.
  • the protrusion or the recess has the same shape.
  • the shape of the protrusion or the recess is one or more of a triangle, a trapezoid, a convex polygon, and an arc.
  • the protrusion or the recess is an isosceles triangle and the base angle of the isosceles triangle is 30°.
  • the first insulating layer includes an organic material; the second insulating layer The layer comprises silicon nitride or silicon oxide.
  • an array substrate including a pixel structure as described above.
  • a display device includes a color filter substrate, an array substrate disposed opposite to the color filter substrate, and a liquid crystal molecular layer filled between the color filter substrate and the array substrate, which are disposed on the array substrate There is a pixel structure as described above.
  • a display panel including the display device as described above is provided.
  • a method for fabricating an array substrate of a display device comprising the steps of: forming a first insulating layer on a substrate; forming a first electrode including the first electrode on the first insulating layer An electrode layer; a second insulating layer formed on the first electrode layer; and a plurality of second electrodes formed on the second insulating layer at intervals to form a second electrode layer, wherein the first electrode layer And at least one of the second electrode layers has at least one of a protrusion and a recess.
  • At least one of the first insulating layer and the second insulating layer is formed to have at least one of a protrusion and a recess, and the first electrode layer and the The second electrode layer is conformally formed on the first insulating layer and the second insulating layer, respectively, such that at least one of the first electrode layer and the second electrode layer has a protrusion and a recess At least one of them.
  • the first insulating layer is formed to have at least one of a bump and a recess
  • the first electrode layer, the second insulating layer, and the second electrode layer are sequentially Formally formed on the first insulating layer such that the first electrode layer has a protrusion or a recess corresponding to a position of the second electrode and a position corresponding between two adjacent second electrodes, And each of the second electrodes has a protrusion or a recess.
  • At least one of a bump and a recess is formed on the first insulating layer by a patterning process using a halftone mask.
  • At least one of a bump and a recess is formed on the first insulating layer by an imprint process.
  • At least one of a bump and a recess is formed on the first insulating layer by a printing process.
  • a pixel structure provided by the present disclosure, an array substrate including the pixel structure, a display device including the array substrate, a display panel including the display device, and a method of manufacturing the array substrate described above, through a surface facing the common electrode of the first insulating layer Providing a plurality of protrusions on at least one of the surface of the second insulating layer facing the pixel electrode, the common electrode layer, and the pixel electrode layer, so that liquid crystal molecules at least at the position of the pixel electrode are more easily rotated from the vertical state to the tilt
  • the state makes the directionality of the rotation of the liquid crystal molecules more clear, so that the change speed of the liquid crystal molecules when switching between the bright state and the dark state tends to be the same, and the flicker phenomenon is less likely to occur.
  • FIG. 1 is a schematic view showing a liquid crystal arrangement and an electric field distribution when a voltage of a pixel electrode in a FFS mode is a positive voltage in a horizontal electric field type display device according to the related art;
  • FIG. 2 is a schematic view showing a liquid crystal arrangement and an electric field distribution when a voltage of a pixel electrode in a FFS mode is a negative voltage in a horizontal electric field type display device according to the related art;
  • FIG. 3 is a schematic view showing an electric field distribution when a voltage of a pixel electrode is a positive voltage in a FFS mode in a horizontal electric field type display device according to the related art
  • FIG. 4 is a schematic diagram showing an electric field distribution when a voltage of a pixel electrode in a FFS mode is a negative voltage in a horizontal electric field type display device according to the related art
  • Figure 5 is a schematic view showing the rotation of a liquid crystal molecule in a direction close to a vertical state as a function of an electric field
  • Figure 6 is a view showing the rotation of the liquid crystal molecules in the tilted state with the direction of the electric field
  • Figure 7 shows the brightness curve of the display device in FFS mode at different times
  • FIG. 8 illustrates a schematic cross-sectional view of an exemplary display device in accordance with an embodiment of the present disclosure
  • FIG. 9 illustrates a schematic cross-sectional view of an exemplary display device in accordance with another embodiment of the present disclosure.
  • FIG. 10 illustrates a schematic cross-sectional view of an exemplary display device in accordance with yet another embodiment of the present disclosure
  • FIG. 11 illustrates a cross-sectional schematic view of an exemplary display device in accordance with yet another embodiment of the present disclosure
  • FIG. 12 shows that the voltage of the pixel electrode of the display device according to the embodiment shown in FIG. 11 is positive Schematic diagram of electric field distribution at voltage
  • FIG. 13 is a schematic view showing an electric field distribution when a voltage of a pixel electrode of a display device according to the embodiment shown in FIG. 11 is a negative voltage;
  • Figure 14 is a cross-sectional view showing a related art display device having planar electrodes
  • FIG. 15 shows a schematic cross-sectional view of a display device having bump electrodes in accordance with the present disclosure
  • 16 shows a luminance-time curve of a related art display device having a planar electrode and a display device having a bump electrode in the present disclosure
  • FIG. 17 illustrates a schematic cross-sectional view of a display device having recessed pixel electrodes and a common electrode, in accordance with an embodiment of the present disclosure
  • FIG. 18 illustrates a cross-sectional schematic view of an exemplary pixel structure in accordance with an embodiment of the present disclosure
  • FIG. 19 shows a schematic diagram of a method of preparing a first insulating layer of an array substrate of a display device of the present disclosure
  • FIG. 20 shows a schematic diagram of another method of preparing a first insulating layer of an array substrate of a display device of the present disclosure.
  • conformal means that when the second layer is disposed on the first layer, the second layer has the same or similar surface topography as the first layer.
  • the FFS display mode has high transmittance and an enlarged viewing angle compared to the IPS display mode.
  • the TFT-LCD adopts transparent Indium Tin Oxide (ITO) as an electrode to make the transmittance higher, and the positive and negative electrodes are separated and overlapped by the insulating layer to reduce The electrode width and spacing thereby widen the viewing angle.
  • ITO Indium Tin Oxide
  • the luminance of the pixel electrode is abruptly attenuated when the pixel electrode is switched between the positive and negative frames in the FFS display mode, the luminance difference at different times is large, and thus the TFT-LCD is more likely to cause flicker in the FFS display mode.
  • FIG. 1 and 2 respectively show schematic diagrams of liquid crystal arrangement and electric field distribution of a voltage of a pixel electrode of a horizontal electric field type display device in a FFS mode in a related art
  • FIG. 3 and FIG. 4 respectively show related art
  • the medium-level electric field type display device is a schematic diagram of the electric field distribution of the positive and negative voltages of the pixel electrode in the FFS mode.
  • the display device includes a color filter substrate 10, an array substrate 20, and a liquid crystal molecular layer disposed between the color filter substrate 10 and the array substrate 20.
  • the array substrate 20 includes a signal line 18, a first insulating layer 17, a common electrode layer composed of the common electrode 16, a second insulating layer 15, and a pixel electrode layer composed of a plurality of pixel electrodes 14.
  • the color filter substrate 10 is disposed opposite to the array substrate 20 and both are disposed on one side of a backlight module (not shown).
  • the color filter substrate 10 includes a black matrix 11, an RGB color film 12, and a flat layer 13.
  • the array substrate 20 generates an electric field that can control the liquid crystal molecules 19 through the pixel electrode 14 and the common electrode 16 disposed thereon.
  • the orientation of the liquid crystal molecules 19 distributed in the liquid crystal molecule layer changes depending on the electric field distribution generated in the array substrate 20.
  • the upper surface of the first insulating layer 17 (i.e., the surface facing the common electrode 16) is a flat surface.
  • a planar common electrode 16 is disposed on the first insulating layer 17.
  • the second insulating layer 15 is disposed on the common electrode 16 and its upper surface (ie, the surface away from the first insulating layer 17) is a flat surface.
  • the planar pixel electrodes 14 are spaced apart from each other on the second insulating layer 15.
  • the liquid crystal region corresponding to the pixel electrode 14 is the P1 region
  • the region corresponding to the position between the adjacent pixel electrodes 14 is the P2 region.
  • the time-luminance change of the pixel unit from the bright state to the dark state at the P1 position is exactly the same as the time-luminance change of the P2 position from the dark state to the bright state
  • the brightness of the pixel unit of the positive and negative frames is The brightness changes at the same speed, so the screen does not flicker.
  • the liquid crystal molecules change the time-luminance change between the dark state and the bright state when the positive and negative frames are switched, so that the brightness of the pixel unit at different times has a large difference, resulting in flicker. phenomenon.
  • Fig. 5 is a view showing the rotation of the liquid crystal molecules 19 in the P1 region in the near-vertical state as a function of the direction of the electric field.
  • the liquid crystal molecules 19 are near a completely vertical state, and the pixels are in a bright state.
  • the pixel electrode 14 and the common electrode 16 on the array substrate 20 generate an electric field for converting the pixel from the bright state to the dark state. Since the electric fields on the left and right sides are substantially the same, the forces received by the liquid crystal molecules are substantially equal in the respective oblique directions, so that the directivity of the liquid crystal molecules 19 from the vertical state to the tilted state is unclear, so that the liquid crystal molecules 19 are closer to being completely vertical. The state, the less likely it is to rotate to both sides, causing the pixel to slow down from the bright state to the dark state.
  • FIG. 6 shows a schematic diagram of the rotation of the liquid crystal molecules 19 at the position P1 in the tilted state with the direction of the electric field.
  • the liquid crystal molecules 19 are in an inclined state, and the pixels are in a dark state.
  • the pixel electrode 14 and the common electrode 16 on the array substrate 20 generate an electric field that rotates the liquid crystal molecules from the tilted state to the vertical state. Since the directivity of the liquid crystal molecules 19 from the tilted state to the vertical state is clear compared to the state of being rotated from the vertical state to the tilted state, the speed of the pixel from the dark state to the bright state is faster. The greater the tilt angle of the liquid crystal molecules, the more directional the liquid crystal molecules rotate in the direction of the electric field, resulting in faster changes in the speed of the pixels from dark to bright.
  • the switching between the bright state and the dark state of the pixel at the P2 position is similar to the P1 position.
  • FIG. 7 shows the brightness curves of the display device at different times in FFS mode. This brightness curve reflects the above-described brightness decay phenomenon. It can be found that the flicker phenomenon is more pronounced when the relative differences in the brightness of the moments a and b are large.
  • a display device includes a first insulating layer, a first electrode layer composed of a first electrode, a second insulating layer, and a second electrode layer composed of a plurality of second electrodes.
  • the first electrode layer is disposed on the first insulating layer; the second insulating layer is disposed on the first electrode layer; and the plurality of second electrodes are disposed on the second insulating layer at intervals. At least one of the first electrode layer and the second electrode layer has a protrusion.
  • the first electrode may be a common electrode and the second electrode may be a pixel electrode. It should be understood that other embodiments are also possible, for example, the first electrode is a pixel electrode and the second electrode is a common electrode.
  • the exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, taking a first electrode as a common electrode and a second electrode as a pixel electrode.
  • FIG. 8 shows a schematic cross-sectional view of an exemplary display device in accordance with one embodiment of the present disclosure.
  • the display device proposed by the embodiment of the present disclosure includes a color filter substrate 100, an array substrate 200, and a liquid crystal molecular layer disposed between the two substrates.
  • the array substrate 200 includes a signal line 8, a first insulating layer 7, a common electrode layer composed of the common electrode 6, a second insulating layer 5, and a pixel electrode layer composed of a plurality of pixel electrodes 4.
  • the color filter substrate 100 is disposed opposite to the array substrate 200.
  • the color filter substrate 100 may include a black matrix 1, an RGB color film 2, and a flat layer 3.
  • each of the pixel electrodes 4 has a bump.
  • a bump may be disposed at a position of the second insulating layer 5 corresponding to the pixel electrode 4, and the pixel electrode 4 may be conformally covered on the second insulating layer 5 such that the pixel electrode 4 has Raised.
  • the direction of the electric field of the P1 region can be changed, so that the vertical component of the electric field of the P1 region is reduced, and the horizontal component is increased.
  • the forces applied in different directions of the liquid crystal molecules are different, so that the orientation of the liquid crystal molecules rotating during the switching of the positive and negative frames is more clear and more It is easy to switch from a vertical state or a near vertical state to a tilt state.
  • the speed at which P1 is brightened and darkened is close to the speed at which P2 is darkened, so that the brightness variations of P1 and P2 can be better complemented, at least in part.
  • the problem of flicker due to the difference in the speed of change in brightness at P1 and P2 is improved.
  • the first insulating layer 7 may be composed of an organic material.
  • the second insulating layer 5 may be composed of silicon nitride or silicon oxide.
  • the pixel electrode 4 may be composed of indium tin oxide (ITO).
  • FIG. 9 illustrates a schematic cross-sectional view of an exemplary display device in accordance with another embodiment of the present disclosure.
  • the common electrode 6 has a bump at a position corresponding to between two adjacent pixel electrodes 4.
  • a bump may be disposed at a position of a surface of the first insulating layer 7 corresponding to between two adjacent pixel electrodes 4.
  • the common electrode 6 conformally covers the surface of the first insulating layer 7, so that the common electrode 6 has a bump at a position corresponding to two adjacent pixel electrodes 4.
  • the electric field at the position between the two pixels i.e., the P2 position
  • the planar common electrode so that the liquid crystal molecules of the P2 region are more likely to change from the vertical state to the tilt state.
  • the speed at which light is dimmed at P2 is close to the speed at which P1 is darkened, so that the change in brightness at P1 and P2 can be better complemented, at least The problem of flicker due to the difference in the speed of change in brightness at P1 and P2 is partially improved.
  • FIG. 10 illustrates a schematic cross-sectional view of an exemplary display device in accordance with yet another embodiment of the present disclosure.
  • each of the pixel electrodes 4 has a bump
  • a position of the common electrode 6 corresponding to the position between the two adjacent pixel electrodes 4 has a bump.
  • a bump may be disposed at a position of a surface of the first insulating layer 7 corresponding to between two adjacent pixel electrodes 4.
  • the common electrode 6 conformally covers the first insulating layer 7 such that the common electrode 6 has a bump at a position corresponding to between the two adjacent pixel electrodes 4; and at the second insulating layer 5 A bump is provided corresponding to the position of the pixel electrode 4, and the pixel electrode 4 is conformally covered on the second insulating layer 5, so that the pixel electrode 4 has a bump.
  • FIG. 11 illustrates a schematic cross-sectional view of an exemplary display device in accordance with yet another embodiment of the present disclosure.
  • the upper surface of the first insulating layer 7 has projections.
  • the common electrode 6 conformally covers the surface of the first insulating layer 7 so that the common electrode 6 also has a bump.
  • the second insulating layer 5 is conformally covered on the side of the common electrode 6 remote from the first insulating layer 7 so that the surface of the second insulating layer 5 has a bump.
  • a plurality of pixel electrodes 4 are conformally disposed on the protrusions of the second insulating layer 5 such that each of the pixel electrodes 4 has a bump, and the common electrode 6 is at a position corresponding to the pixel electrode 4 and corresponds to two adjacent The position in the middle of the pixel electrode 4 has a bump.
  • the common electrode 6 has a bump at a position corresponding to an intermediate position of the two adjacent pixel electrodes 4, except that it has a bump at a position corresponding to the pixel electrode 4.
  • Such a configuration can form a bump in the process of forming the first insulating layer, and then conformally form the common electrode, the second insulating layer, and the pixel electrode on the first insulating layer, thereby simplifying the process and improving production efficiency.
  • the shape of the protrusion may be, for example, one or more of a triangle, a trapezoid, a convex polygon, and an arc.
  • the present disclosure is described by taking a triangular convex shape as an example. It should be understood that the above list of protrusions is merely exemplary and should not be construed as limiting the disclosure.
  • the liquid crystal molecules at the regions P1 and P2 are less likely to be in a vertical state, and are more likely to be in a tilted state.
  • the electric field generated in the P1 and P2 regions causes the liquid crystal molecules to change from a vertical state or a near vertical state to a tilted state.
  • the forces applied in different directions of the liquid crystal molecules are different, so that the orientation of the rotation of the liquid crystal molecules is more clear when the positive and negative frames are switched, and it is easier to switch from the vertical state or the near vertical state to the tilt state.
  • the rate of change of the liquid crystal molecules at the positions P1 and P2 from the vertical state to the tilt state tends to be the same as the speed of the change from the tilt state to the vertical state, and the luminance decay due to the difference in the speed of change is less likely to occur. Avoid flickering.
  • the array substrate of the related art display device employs a flat electrode (including a pixel electrode and a common electrode) having a pixel size of 20 ⁇ m ⁇ 60 ⁇ m, a horizontal width of the pixel electrode of 2.5 ⁇ m, and a slit between adjacent pixel electrodes.
  • the width is 4.0 ⁇ m.
  • the array substrate of the display device provided by the embodiment of the present disclosure in FIG. 15 adopts a bump electrode (including a pixel electrode and a common electrode), and the pixel size and the horizontal width of the pixel electrode are completely consistent with FIG. 14 , and the pixel electrode and the common electrode
  • the raised angle of the tap is 30°.
  • the tap angle of the protrusion is the base angle of the isosceles triangle.
  • the inclination angle thereof is an angle formed by the surface of the second insulating layer and the oblique side of the section of the protrusion shown in the drawing; similarly, the protrusion of the common electrode is inclined The corner is the angle formed by the surface of the first insulating layer and the oblique side of the cross section shown in the drawing.
  • FIG. 16 shows a luminance-time curve of a related art display device having a planar electrode and a display device having a bump electrode in the present disclosure, specifically, a simulation analysis by Techwiz V16 as shown in FIG. 15 according to the present disclosure.
  • a thin solid line shows a luminance-time relationship of a pixel using a flat pixel structure of the related art
  • a thick solid line shows a luminance-time relationship of a pixel using a convex pixel structure of the display device of the embodiment of the present disclosure.
  • the flat pixel structure corresponding to the related art has a flicker value of 16.5%, and the raised pixel structure in the embodiment of the present disclosure has a flicker value of 10.2%. It can be seen that the pixel brightness variation amplitude of the convex pixel structure in the embodiment of the present disclosure is significantly smaller than the brightness variation range of the pixel adopting the flat pixel structure in the related art, and thus the horizontal electric field type TFT-LCD display device can be effectively improved. Flicker in FFS mode.
  • the pixel electrode and the common electrode It is arranged to have a protrusion to change the direction of the electric field, in particular to change the position of the liquid crystal layer corresponding to the pixel electrode and the position of the electric field corresponding to the position between the two pixel electrodes, so that the liquid crystal molecules at P1 and P2 are easier to
  • the vertical state is switched to the tilt state to improve the flicker problem due to the difference in the brightness change speeds of P1 and P2.
  • the direction of the electric field can also be changed by arranging the pixel electrode and the common electrode to have a recess.
  • the depressions and projections are equivalent, and any of the projections shown in the drawings can be replaced with depressions and vice versa.
  • FIG. 17 illustrates a schematic cross-sectional view of a display device having recessed pixel electrodes and a common electrode, in accordance with an embodiment of the present disclosure.
  • each of the pixel electrodes 4 has a recess
  • the common electrode 6 has a recess corresponding to a position between two adjacent pixel electrodes 4.
  • the common electrode 6 has a recess at a position corresponding to between two adjacent pixel electrodes 4 and a position corresponding to each pixel electrode.
  • only the position of the common electrode corresponding to the two pixel electrodes is set to have a recess, or only the pixel electrode is set to have a recess.
  • Embodiments of the present disclosure also provide a pixel structure.
  • This pixel structure can be applied to the display device described herein.
  • the pixel structure includes a first insulating layer, a common electrode layer composed of a common electrode, a second insulating layer, and a pixel electrode layer composed of a plurality of pixel electrodes.
  • the common electrode layer is disposed on the first insulating layer
  • the second insulating layer is disposed on the common electrode
  • the plurality of pixel electrodes are disposed on the second insulating layer at intervals.
  • At least one of the common electrode layer and the pixel electrode layer has a bump.
  • FIG. 18 shows a schematic cross-sectional view of an exemplary pixel structure in accordance with an embodiment of the present disclosure.
  • a protrusion may be provided on the surface of the first insulating layer 7 facing the common electrode 6, the position of the bump corresponding to the position of the pixel electrode 4 and the position between the two adjacent pixel electrodes 4.
  • the common electrode layer conformally covers the bumped surface of the first insulating layer 7 such that the common electrode 6 has a bump at a position corresponding to the pixel electrode 4 and a position between the two adjacent pixel electrodes 4.
  • the second insulating layer 5 is conformally covered on the common electrode 6, so that the second insulating layer 5 has a convexity at a position corresponding to the convex position of the common electrode 6.
  • the pixel electrode 4 is conformally covered on the second insulating layer 5, and on the second insulating layer, one pixel electrode is disposed every one protrusion. Other embodiments are also possible.
  • the pixel electrode and the common electrode become a non-planar structure.
  • the vertical component of the electric field between the pixel electrode and the common electrode can be reduced, and the horizontal component can be increased, so that liquid crystal molecules near the pixel electrode are switched between positive and negative frames.
  • the orientation of the rotation is more clear, and it is easier to switch from a vertical state or a near vertical state to a tilt state.
  • the rate of change of the liquid crystal molecules from the vertical state to the tilt state tends to be the same as the rate of change from the tilt state to the vertical state, and the luminance decay due to the difference in the change speed is less likely to occur, so that the flicker phenomenon of the display device can be improved.
  • Embodiments of the present disclosure also provide an array substrate.
  • the array substrate can include the pixel structures described herein.
  • the array substrate can be applied to the display device described herein to improve the flicker of the display device.
  • Embodiments of the present disclosure also propose a display panel employing the above display device.
  • the display panel can be applied to a device having a display function such as a liquid crystal television, a liquid crystal display, a mobile phone, a PDA, or a tablet computer.
  • the method for preparing an array substrate of the present disclosure mainly includes the following steps:
  • a pixel electrode layer is formed, wherein at least one of the common electrode layer and the pixel electrode layer has at least one of a bump and a recess.
  • At least one of the first insulating layer and the second insulating layer is formed to have at least one of a bump and a recess, and the common electrode layer and the pixel electrode layer are conformally formed respectively on The first insulating layer and the second insulating layer are disposed such that at least one of the common electrode layer and the pixel electrode layer has a protrusion or a depression, or a combination of a protrusion and a recess.
  • a plurality of protrusions or depressions may be formed on a surface of the first insulating layer in the process of preparing the first insulating layer, and then the common electrode layer, the second insulating layer, and the pixel electrode layer may be formed Formally conformally formed on the first insulating layer such that each pixel electrode has a bump, and the common electrode corresponds to a position of the pixel electrode and a bit corresponding to between two adjacent pixel electrodes Set with protrusions or depressions.
  • the common electrode and the pixel electrode of the array substrate formed by the method of the embodiment of the present disclosure are both non-planar structures, and the vertical component of the electric field between the pixel electrode and the common electrode can be reduced, and the horizontal component can be increased, thereby improving the flicker of the display device. phenomenon.
  • FIG. 19 is a schematic view showing a method of fabricating a first insulating layer of an array substrate of a display device according to the present disclosure.
  • the method forms at least one of a bump and a recess on the first insulating layer by a patterning process using a halftone mask.
  • the method exposes the protrusion of the first insulating layer by a mask of a semi-transmissive structure.
  • the mask on the upper portion of the first insulating layer is divided into a full transparent structure and a semi-transparent structure, and the semi-transparent structure corresponds to the convex position of the first insulating layer, and the full transparent structure corresponds to At a position other than the protrusion of the first insulating layer.
  • the semi-transparent structure corresponds to the convex position of the first insulating layer
  • the full transparent structure corresponds to At a position other than the protrusion of the first insulating layer.
  • FIG. 20 shows a schematic diagram of another method of fabricating a first insulating layer of an array substrate of a display device according to the present disclosure.
  • the method forms at least one of a bump and a recess on the first insulating layer by an imprint process.
  • an embossing plate is used on the upper surface of the first insulating layer, the embossing plate having a groove corresponding to the projection to form a projection during the embossing.
  • the organic film structure of the present disclosure having a convex first insulating layer can also be obtained by a printing method such as nanoprinting.

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Abstract

提供了一种像素结构、阵列基板、显示器件、显示面板及制造显示器件的阵列基板的制造方法。像素结构包括第一绝缘层（7）、由公共电极（6）构成的公共电极层、第二绝缘层（5）以及由多个像素电极（4）构成的像素电极层。公共电极层设置在第一绝缘层（7）上；第二绝缘层（5）设置在公共电极层上；多个像素电极（4）间隔地设置在所述第二绝缘层（5）上，其中，公共电极层和像素电极层中的至少一个具有凸起或者凹陷中的至少一者。因此，可以使在像素电极（4）的位置、以及相邻像素电极（4）之间的位置处的液晶分子更容易从垂直状态旋转到倾斜状态，从而使得两个位置处的液晶分子在亮态和暗态之间转化时的变化速度趋于相同，不容易出现闪烁现象。

Description

像素结构、显示器件及具有该显示器件的显示面板
相关申请的交叉引用
本申请要求于2016年06月17日递交的中国专利申请第201610430316.3号的优先权和权益，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开涉及显示领域，尤其涉及一种像素结构、显示器件及具有该显示器件的显示面板。
背景技术
在显示技术领域中，薄膜晶体管液晶显示装置(Thin Film Transistor Liquid Crystal Display,TFT-LCD)是一种主要的液晶显示装置。
根据驱动液晶的电场的方向不同，TFT-LCD可分为垂直电场型和水平电场型，其中垂直电场型TFT-LCD在阵列基板上形成像素电极上并且在彩膜基板上形成公共电极；水平电场型TFT-LCD在阵列基板上同时形成像素电极和公共电极。水平电场型TFT-LCD包括平面切换(In-Plane Switching,IPS)模式和边缘场切换(Fringe Field Switching,FFS)模式。
相比于IPS显示模式，FFS显示模式由于高透过率和扩大的视角被广泛应用于高端显示领域。
发明内容
本公开的实施例提供一种像素结构、具有该像素结构的阵列基板、显示器件、显示面板以及用于制造该显示器件的阵列基板的方法。
根据本公开的一方面，提供一种像素结构，该像素结构第一绝缘层、由第一电极构成的第一电极层、第二绝缘层以及由多个第二电极构成的第二电极层，所述第一电极层设置在所述第一绝缘层上；所述第二绝缘层设置 在所述第一电极层上；所述多个第二电极间隔地设置在所述第二绝缘层上，其中，所述第一电极层和所述第二电极层中的至少一个具有凸起和凹陷中的至少一者。
在本公开的实施例中，每个所述第二电极具有凸起或凹陷。
在本公开的实施例中，所述第一电极在对应于两个相邻第二电极之间的位置具有凸起或凹陷。
在本公开的实施例中，所述第一电极在对应于所述第二电极的位置具有凸起或凹陷。
在本公开的实施例中，所述第二绝缘层的表面具有凸起和凹陷中的至少一者，所述第二电极保形地覆盖在所述第二绝缘层上，以使所述第二电极具有凸起或凹陷。
在本公开的实施例中，所述第一绝缘层的表面在对应于两个相邻第二电极之间的位置具有凸起或凹陷，所述第一电极保形地覆盖在所述第一绝缘层上，以使所述第一电极在对应于两个相邻第二电极之间的位置具有凸起或凹陷。
在本公开的实施例中，所述第一绝缘层的表面进一步在对应于第二电极的位置具有凸起或凹陷，以使所述第一电极进一步在对应于第二电极的位置具有凸起或凹陷。
在本公开的实施例中，所述第二绝缘层保形地覆盖在所述第一电极上，以使所述第二绝缘层在对应于所述第二电极的位置以及两个相邻第二电极之间的位置具有凸起或凹陷；以及所述第二电极保形地覆盖在所述第二绝缘层上，以使所述第二电极具有凸起或凹陷。
在本公开的实施例中，所述凸起或所述凹陷具有相同的形状。
在本公开的实施例中，所述凸起或所述凹陷的形状为三角形、梯形、凸多边形、弧形中的一种或多种。
在本公开的实施例中，所述凸起或所述凹陷为等腰三角形并且所述等腰三角形的底角为30°。
在本公开的实施例中，所述第一绝缘层包括有机材料；所述第二绝缘 层包括氮化硅或氧化硅。
根据本公开的另一方面，提供一种阵列基板，包括如上所述的像素结构。
根据本公开的另一方面，提供一种显示器件，包括彩膜基板、与彩膜基板相对设置的阵列基板、以及在彩膜基板和阵列基板之间填充的液晶分子层，在阵列基板上设置有如上所述的像素结构。
根据本公开的另一方面，提供一种显示面板，包括如上所述的显示器件。
根据本公开的另一方面，提供一种用于制备显示器件的阵列基板的方法，包括如下步骤：在基底上形成第一绝缘层；在所述第一绝缘层上形成包括第一电极的第一电极层；在所述第一电极层上形成第二绝缘层；以及在所述第二绝缘层上间隔地形成多个第二电极以构成第二电极层，其中，所述第一电极层和所述第二电极层中的至少一个具有凸起和凹陷中的至少一者。
在本公开的实施例中，所述第一绝缘层和所述第二绝缘层中的至少一者被形成为具有凸起和凹陷中的至少一者，并且所述第一电极层和所述第二电极层分别保形地形成在所述第一绝缘层和所述第二绝缘层上，以使所述第一电极层和所述第二电极层中的至少一个具有凸起和凹陷中的至少一者。
在本公开的实施例中，所述第一绝缘层被形成为具有凸起和凹陷中的至少一者，并且所述第一电极层、所述第二绝缘层和所述第二电极层依次保形地形成在所述第一绝缘层上，以使所述第一电极层对应于所述第二电极的位置以及对应于两个相邻第二电极之间的位置具有凸起或凹陷，以及每个所述第二电极具有凸起或凹陷。
在本公开的实施例中，其中，通过使用半色调掩模的构图工艺在所述第一绝缘层上形成凸起和凹陷中的至少一者。
在本公开的实施例中，通过压印工艺在所述第一绝缘层上形成凸起和凹陷中的至少一者。
在本公开的实施例中，通过印刷工艺在所述第一绝缘层上形成凸起和凹陷中的至少一者。
本公开提供的像素结构、包括该像素结构的阵列基板、包括该阵列基板的显示器件和包括该显示器件的显示面板以及制造上述阵列基板的方法，通过在第一绝缘层的面向公共电极的表面、第二绝缘层的面向像素电极的表面、公共电极层和像素电极层中的至少一个上设置多个凸起，而使至少在像素电极的位置处的液晶分子更容易从垂直状态旋转到倾斜状态，使液晶分子旋转的方向性更加明确，从而使得液晶分子在亮态和暗态之间转换时的变化速度趋于相同，不容易出现闪烁现象。
附图说明
当结合附图阅读时，可从下述优选实施例的描述中获得本公开内容的完整理解，在附图中：
图1示出相关技术中水平电场型显示器件在FFS模式下像素电极的电压为正电压时的液晶排布和电场分布的示意图；
图2示出相关技术中水平电场型显示器件在FFS模式下像素电极的电压为负电压时的液晶排布和电场分布的示意图；
图3示出相关技术中水平电场型显示器件在FFS模式下像素电极的电压为正电压时的电场分布的示意图；
图4示出相关技术中水平电场型显示器件采用FFS模式中像素电极的电压为负电压时的电场分布的示意图；
图5示出液晶分子在接近垂直状态时随电场方向的旋转示意图；
图6示出液晶分子在倾斜状态时随电场方向的旋转示意图；
图7示出在FFS模式下的显示器件在不同时间下的亮度曲线；
图8示出根据本公开的一个实施例的示例性显示器件的截面示意图；
图9示出根据本公开的另一实施例的示例性显示器件的截面示意图；
图10示出根据本公开的又一实施例的示例性显示器件的截面示意图；
图11示出根据本公开的又一实施例的示例性显示器件的截面示意图；
图12示出根据图11所示的实施例的显示器件的像素电极的电压为正 电压时的电场分布的示意图；
图13示出根据图11所示的实施例的显示器件的像素电极的电压为负电压时的电场分布的示意图；
图14示出相关技术的具有平面电极的显示器件的截面示意图；
图15示出根据本公开的具有凸起电极的显示器件的截面示意图；
图16示出相关技术的具有平面电极的显示器件和本公开中的具有凸起电极的显示器件的亮度-时间曲线；
图17示出根据本公开的实施例的具有凹陷的像素电极和公共电极的显示器件的截面示意图；
图18示出根据本公开的实施例的示例性像素结构的截面示意图；
图19示出一种制备本公开的显示器件的阵列基板的第一绝缘层的方法的示意图；以及
图20示出制备本公开的显示器件的阵列基板的第一绝缘层的另一方法的示意图。
具体实施方式
下面将结合本公开的附图，对本公开实施例中的技术方案进行清楚、完整地描述。应理解的是，本公开具体实施例仅是示意性的，而不作为对本公开保护范围的任何限制。
首先需要说明的是，在本公开的实施例中，“保形”是指将第二层设置在第一层上时，第二层与第一层具有相同或相似的表面形貌。
如上所述，相比于IPS显示模式，FFS显示模式具有高透过率和扩大的视角。具体地，TFT-LCD在FFS显示模式下，采用透明的铟锡氧化物(Indium Tin Oxide,ITO)作为电极使得透光率更高，并且将正负电极通过绝缘层分离并重叠排列从而减小电极宽度和间距从而扩大视角。然而，由于在FFS显示模式中像素电极在正负帧切换时亮度突然衰减，使得不同时刻的亮度差异大，因此TFT-LCD在FFS显示模式下更容易产生闪烁现象。
图1和图2分别示出相关技术中水平电场型显示器件在FFS模式下像素电极的电压为正电压和负电压的液晶排布和电场分布的示意图；图3和图4分别示出相关技术中水平电场型显示器件在FFS模式下像素电极的电压为正电压和负电压的电场分布的示意图。如图1-4所示，该显示器件包括彩膜基板10、阵列基板20、以及设置在彩膜基板10与阵列基板20之间的液晶分子层。阵列基板20包括信号线18、第一绝缘层17、由公共电极16构成的公共电极层、第二绝缘层15以及由多个像素电极14构成的像素电极层。彩膜基板10与阵列基板20相对设置并且两者都设置于背光模组(未示出)的一侧。彩膜基板10包括黑色矩阵11、RGB彩膜12和平坦层13。阵列基板20通过设置在其上的像素电极14和公共电极16产生可控制液晶分子19的电场。液晶分子层中分布的液晶分子19的取向随阵列基板20中所产生的电场分布而改变。
在图1-图4所示的配置中，第一绝缘层17的上表面(即，面向公共电极16的表面)为平面。平面的公共电极16设置在第一绝缘层17上。第二绝缘层15设置在公共电极16上并且其上表面(即，远离第一绝缘层17的表面)为平面。平面的像素电极14间隔地设置在第二绝缘层15上。在图1和图2中，像素电极14所对应的液晶区域为P1区域，而相邻的像素电极14中间的位置所对应的区域为P2区域。
现在根据图1至图4分析水平电场型TFT-LCD显示器件采用FFS模式分别在像素电极电压为正电压和负电压(即正帧和负帧)时的电场分布和液晶排布。
当不对像素电极14施加电压时，阵列基板20和彩膜基板10间不存在电场，此时液晶分子层中的液晶分子以平行于基板的取向分布。当对像素电极14施加正电压时，液晶分子19沿图1和图3所示的电场方向分布，此时亮区集中在P1区域，暗区集中在P2区域。当对像素电极14施加负电压时，液晶分子19沿图2和图4所示的电场方向分布，此时亮区集中在P2区域，暗区集中在P1区域。当像素在正负帧之间切换时，P1位置和P2位置的亮区和暗区发生切换。
在理论上，当像素单元在P1位置由亮态到暗态的时间-亮度变化情况与P2位置由暗态到亮态的时间-亮度变化情况完全相同时，正负帧的像素单元的亮度和亮度变化速度相同，因此屏幕不会出现闪烁现象。然而，在实际情况下，液晶分子在正负帧切换时在暗态和亮态之间的相互切换的时间-亮度变化情况不同，因此像素单元在不同时刻的亮度存在较大的差异，产生闪烁现象。
图5示出P1区域的液晶分子19在接近垂直状态时随电场方向的旋转示意图。在正帧时，液晶分子19接近完全垂直状态，像素处于亮态。在正帧切换至负帧时，阵列基板20上的像素电极14和公共电极16产生用于将像素由亮态转换到暗态的电场。由于左右两侧的电场基本上相同，液晶分子所受到的力在各个倾斜方向上基本上相等，因此液晶分子19由垂直状态向倾斜状态旋转的方向性不明确，使得液晶分子19越接近完全垂直状态，越不容易朝两边旋转，从而导致像素由亮态到暗态的速度变慢。
对应地，图6示出P1位置处的液晶分子19在倾斜状态时随电场方向的旋转示意图。在负帧时，液晶分子19处于倾斜状态，像素处于暗态。在负帧切换至正帧时，阵列基板20上的像素电极14和公共电极16产生将液晶分子从倾斜状态旋转到垂直状态的电场。由于液晶分子19从倾斜状态旋转到垂直状态相比从垂直状态旋转到倾斜状态的方向性明确，因此像素由暗态到亮态的速度更快。液晶分子倾斜角度越大，液晶分子沿电场方向旋转的方向性越明确，导致像素由暗态到亮态的速度变化越快。
P2位置的像素的亮态和暗态之间的切换情况与P1位置类似。
因此，如图1-4中所示的方案在正负帧显示的时候，由于其像素电极14和公共电极16之间产生的垂直电场分量较多，使得在正负帧切换的时候，处于接近垂直状态的液晶分子存在取向不明确的问题。
由于如上所述的像素亮态和暗态之间变化的速度差异，在P1位置由暗态变化到亮态时，P2位置则由亮态变化到暗态，此时P1位置的变化速度比较快，而P2位置的变化速度比较慢。反之，P1位置由亮态变化到暗态，P2位置由暗态变化到亮态也存在类似的变化速度差异。因此P1位置 和P2位置不能出现完美的亮度互补，中间某个时刻将出现亮度衰减现象，从而使得显示器件在不同时刻的亮度差异大，产生闪烁现象。
图7示出显示器件在FFS模式下在不同时间的亮度曲线。该亮度曲线体现了上述亮度衰减现象。可以发现，当时刻a和b的亮度相对差异大时，闪烁现象更明显。
因此，需要对平面电场型TFT-LCD显示器件进行改进以克服或减弱上述亮度差异导致的闪烁。调整液晶分子从垂直状态和倾斜状态之间的切换的变化速度使其差异尽可能小是消除上述缺陷的途径之一。
根据本公开的实施例，提供一种显示器件。该显示器件包括第一绝缘层、由第一电极构成的第一电极层、第二绝缘层以及由多个第二电极构成的第二电极层。在本公开的实施例中，第一电极层设置在第一绝缘层上；第二绝缘层设置在所述第一电极层上；多个第二电极间隔地设置在第二绝缘层上。第一电极层和第二电极层中的至少一个具有凸起。
在本公开的实施例中，第一电极可以为公共电极，第二电极可以为像素电极。应当理解，其他实施例也是可行的，例如，第一电极为像素电极，第二电极为公共电极。以下结合附图，以第一电极为公共电极而第二电极为像素电极为例对本文的示例性实施例进行详细说明。
图8示出根据本公开的一个实施例的示例性显示器件的截面示意图。如图8所示，本公开的实施例所提出的显示器件包括彩膜基板100、阵列基板200以及设置在两基板之间的液晶分子层。阵列基板200包括信号线8、第一绝缘层7、由公共电极6构成的公共电极层、第二绝缘层5以及由多个像素电极4构成的像素电极层。彩膜基板100与阵列基板200相对设置。彩膜基板100可以包括黑色矩阵1、RGB彩膜2和平坦层3。
在图8所示的实施例中，每个像素电极4具有凸起。在示例性的实施例中，可以在第二绝缘层5的与像素电极4对应的位置设置凸起，并且使像素电极4保形地覆盖在第二绝缘层5上，以使像素电极4具有凸起。
在这种配置中，在像素电极4处设置凸起，可以改变P1区域的电场的方向，使得P1区域的电场的垂直分量减小，水平分量增加。在这种电 场中，在P1区域的液晶分子从垂直状态或接近垂直状态转换为倾斜状态时，在液晶分子的不同方向上施加的力不同，使得在正负帧切换时液晶分子旋转的取向更加明确，更容易从垂直状态或接近垂直状态转换为倾斜状态。这样，当像素电极4由正电压切换至负电压时，P1处由亮变暗的速度与P2处由暗变亮的速度接近，因此，P1和P2的亮度变化能够更好的互补，至少部分地改善了由于P1处和P2处的亮度变化速度不同而导致的闪烁问题。
在本公开的实施例中，第一绝缘层7可以由有机材料构成。第二绝缘层5可以由氮化硅或氧化硅构成。像素电极4可以由铟锡氧化物(ITO)构成。
图9示出根据本公开的另一实施例的示例性显示器件的截面示意图。在图9所示的实施例中，公共电极6在对应于两个相邻的像素电极4之间的位置具有凸起。在示例性的实施例中，可以在第一绝缘层7的表面的对应于两个相邻的像素电极4之间的位置设置凸起。公共电极6保形地覆盖在第一绝缘层7的表面，从而使得公共电极6在对应于两个相邻的像素电极4的位置具有凸起。
在这种配置中，与平面的公共电极相比，改变了两个像素之间的位置(即P2位置)处的电场，使得P2区域的液晶分子更容易从垂直状态变为倾斜状态。这样，当像素电极由负电压切换至正电压时，P2处由亮变暗的速度与P1处由暗变亮的速度接近，因此，P1处和P2处的亮度变化能够更好的互补，至少部分地改善了由于P1处和P2处的亮度变化速度不同而导致的闪烁问题。
图10示出根据本公开的又一实施例的示例性显示器件的截面示意图。在图10所示的实施例中，每个像素电极4具有凸起，并且公共电极6的对应于两个相邻像素电极4之间的位置具有凸起。在示例性的实施例中，可以在第一绝缘层7的表面的对应于两个相邻的像素电极4之间的位置设置凸起。公共电极6保形地覆盖在第一绝缘层7上，从而使得公共电极6在对应于两个相邻像素电极4之间的位置具有凸起；以及在第二绝缘层5的 对应于像素电极4的位置设置凸起，并且将像素电极4保形地覆盖在第二绝缘层5上，从而使得像素电极4具有凸起。
在图10所示的配置中，无论是由正帧切换到负帧，还是由负帧切换到正帧，P1和P2的亮度变化都能够更好的互补，从而改善了由于P1和P2的亮度变化速度不同而导致的闪烁问题。
图11示出根据本公开的又一实施例的示例性显示器件的截面示意图。在图11所示的实施例中，第一绝缘层7的上表面具有凸起。公共电极6保形地覆盖在第一绝缘层7的表面，以使公共电极6也具有凸起。第二绝缘层5保形覆盖在公共电极6的远离第一绝缘层7的一侧，以使第二绝缘层5的表面具有凸起。多个像素电极4保形地设置在第二绝缘层5的凸起上，以使每个像素电极4具有凸起，并且公共电极6在对应于像素电极4的位置和对应于两个相邻像素电极4的中间的位置具有凸起。在该实施例中，公共电极6除了在于像素电极4对应的位置处具有凸起之外，在与两个相邻像素电极4的中间位置相对应的位置也具有凸起。这种配置可以在形成第一绝缘层的过程中形成凸起，然后依次将公共电极、第二绝缘层、像素电极保形地形成在第一绝缘层上，从而可以简化工艺，提高生产效率。
在本公开的实施例中，凸起的形状可以为例如三角形、梯形、凸多边形、弧形中的一种或多种。在本文中，以三角形凸起形状作为示例描述本公开。应当理解，上述凸起的列举仅是示例性的，而不应作为对本公开的限制。
当向图11的显示器件的阵列基板上的像素电极4施加正电压以及负电压时，在像素电极4与公共电极6之间将产生电场，使液晶分子随电场方向分布。图12和图13分别示出根据图11所示的显示器件的像素电极电压为正电压和负电压(即正帧和负帧显示)时的电场分布的示意图。通过将像素电极4和公共电极6设置为具有凸起，使得产生的电场中垂直电场分量较少，大多数为水平电场分量。在这种电场中，在P1和P2区域处的液晶分子更不容易处于垂直状态，而更容易处于倾斜状态。这样，在P1和P2区域产生的电场使液晶分子从垂直状态或接近垂直状态转换为倾斜状 态时在液晶分子的不同方向上施加的力不同，使得在正负帧切换时液晶分子旋转的取向更加明确，更容易从垂直状态或接近垂直状态转换为倾斜状态。因此，P1和P2位置处的液晶分子从垂直状态旋转到倾斜状态的变化速度与从倾斜状态旋转到垂直状态的变化速度趋于相同，更不容易出现由于变化速度差异导致的亮度衰减，从而可以避免出现闪烁现象。
通过实验，可以对本公开的显示器件结构的技术效果进行验证。
在图14中，相关技术的显示器件的阵列基板采用平坦电极(包括像素电极和公共电极)，像素大小为20μm×60μm，像素电极的水平宽度为2.5μm，相邻像素电极之间的狭缝宽度为4.0μm。而图15中的本公开的实施例提供的显示器件的阵列基板，采用凸起电极(包括像素电极和公共电极)，像素大小与像素电极的水平宽度与图14完全一致，像素电极和公共电极的凸起的倾斜(tape)角为30°。在该实施例中，当凸起的形状为等腰三角形时，凸起的倾斜(tape)角为等腰三角形的底角。具体地，对于像素电极的凸起，其倾斜角为第二绝缘层的表面与凸起在附图中所示的截面的斜边形成的角；类似地，对于公共电极的凸起，其倾斜角为第一绝缘层的表面与凸起在附图中所示的截面的斜边形成的角。
图16示出相关技术的具有平面电极的显示器件和本公开中的具有凸起电极的显示器件的亮度-时间曲线，具体地，示出通过Techwiz V16模拟分析如图15中的根据本公开的实施例的显示器件与图14中的相关技术中的显示器件的亮度-时间关系进行比较的结果。在图16中，细实线示出采用相关技术的平坦像素结构的像素的亮度-时间关系，粗实线示出采用本公开实施例的显示器件的凸起像素结构的像素的亮度-时间关系。与相关技术方案对应的平坦像素结构的闪烁(flicker)值为16.5％，而本公开的实施例中的凸起像素结构的flicker值为10.2％。可见，采用本公开的实施例中的凸起像素结构的像素亮度变化幅度显著小于采用相关技术中的平坦像素结构的像素的亮度变化幅度，因此可以有效地改善水平电场型TFT-LCD显示器件在FFS模式下的闪烁现象。
需要说明的是，在本公开的实施例中，通过将像素电极和公共电极的 设置为具有凸起来改变电场的方向，尤其是改变液晶层中对应于像素电极的位置处以及对应于两个像素电极之间的位置处的电场方向，使得P1和P2处的液晶分子更易于从垂直状态转换到倾斜状态，以改善由于P1和P2的亮度变化速度不同而导致的闪烁问题。然而，可以理解，还可以通过将像素电极和公共电极的设置为具有凹陷来改变电场的方向。对于这一点，凹陷和凸起是等价的，在附图中示出的任一凸起都可以替换为凹陷，反之亦然。
图17示出根据本公开的实施例的具有凹陷的像素电极和公共电极的显示器件的截面示意图。在图17所示的实施例中，每个像素电极4具有凹陷，并且公共电极6对应于两个相邻像素电极4之间的位置具有凹陷。其他实施例也是可行的，例如，公共电极6在对应于两个相邻像素电极4之间的位置以及对应于每个像素电极的位置都具有凹陷。又如，仅将公共电极的对应于两个像素电极之间的位置设置为具有凹陷，或者仅将像素电极设置为具有凹陷。
本公开的实施例还提供一种像素结构。该像素结构可以应用于本文描述的显示器件。该像素结构包括第一绝缘层、由公共电极构成的公共电极层、第二绝缘层以及由多个像素电极构成的像素电极层。公共电极层设置在第一绝缘层上，第二绝缘层设置在公共电极上，多个像素电极间隔地设置在第二绝缘层上。公共电极层和像素电极层中的至少一个具有凸起。
图18示出根据本公开的实施例的示例性像素结构的截面示意图。如图18所示，可以在第一绝缘层7的面向公共电极6的表面设置凸起，凸起的位置对应于像素电极4的位置以及两个相邻像素电极4之间的位置。公共电极层保形地覆盖在第一绝缘层7的具有凸起的表面上，使得公共电极6在对应于像素电极4的位置以及两个相邻像素电极4之间的位置具有凸起。第二绝缘层5保形地覆盖在公共电极6上，使得第二绝缘层5在与公共电极6的凸起位置相对应的位置具有凸起。像素电极4保形地覆盖在第二绝缘层5上，并且在第二绝缘层上，每间隔一个凸起设置一个像素电极。其他实施例也是可行的。
通过这种配置，像素电极和公共电极变为非平面结构。当这种像素结构应用于显示器件，尤其是显示面板的情况下，可以减少像素电极和公共电极之间的电场的垂直分量，增加水平分量，使得像素电极附近的液晶分子在正负帧切换时旋转的取向更加明确，更容易从垂直状态或接近垂直状态转换为倾斜状态。这样液晶分子从垂直状态旋转到倾斜状态的变化速度与从倾斜状态旋转到垂直状态的变化速度趋于相同，不容易出现由于变化速度差异导致的亮度衰减，因此可以改善显示器件的闪烁现象。
本公开的实施例还提供一种阵列基板。该阵列基板可以包括本文描述的像素结构。该阵列基板可以应用于本文描述的显示器件，以改善显示器件的闪烁现象。
本公开的实施例还提出一种采用上述显示器件的显示面板。该显示面板可应用于液晶电视、液晶显示器、手机、PDA、平板电脑等具有显示功能的设备。
现在进一步介绍根据本公开的实施例提供的用于制备显示器件的阵列基板的方法。
本公开的用于制备阵列基板的方法主要包括如下步骤：
在基底上形成第一绝缘层；在第一绝缘层上形成包括公共电极的公共电极层；在公共电极层上形成第二绝缘层；以及在第二绝缘层上间隔地形成多个像素电极以构成像素电极层，其中，其中，公共电极层和像素电极层中的至少一个具有凸起和凹陷中的至少一者。
在示例性的实施例中，第一绝缘层和第二绝缘层中的至少一者被形成为具有凸起和凹陷中的至少一者，并且公共电极层和像素电极层分别保形地形成在第一绝缘层和第二绝缘层上，以使公共电极层和像素电极层中的至少一个具有凸起或凹陷、或凸起与凹陷的组合。
在本公开的示例性实施例中，可以在制备第一绝缘层的过程中，在第一绝缘层的表面形成多个凸起或凹陷，然后将公共电极层、第二绝缘层、像素电极层依次保形地形成在第一绝缘层上，使得每个像素电极具有凸起，并且公共电极对应于像素电极的位置和对应于两个相邻像素电极之间的位 置具有凸起或凹陷。
通过本公开的实施例的方法形成的阵列基板的公共电极和像素电极都为非平面结构，可以减少像素电极和公共电极之间的电场的垂直分量，增加水平分量，从而可以改善显示器件的闪烁现象。
图19示出制造根据本公开的显示器件的阵列基板的第一绝缘层的方法示意图。该方法通过使用半色调掩模的构图工艺在第一绝缘层上形成凸起和凹陷中的至少一者。以凸起为例，该方法通过半透结构的掩模(Mask)曝光形成第一绝缘层的凸起。在制备第一绝缘层的上表面时，在第一绝缘层上部的掩膜版上分为全透结构和半透结构，半透结构对应于第一绝缘层的凸起位置，全透结构对应于第一绝缘层的凸起之外的位置。通过控制半透结构的透过率，对第一绝缘层的上表面进行掩模曝光时形成与全透部分对应的凸起。
图20示出制造根据本公开的显示器件的阵列基板的第一绝缘层的另一方法的示意图。该方法通过压印工艺在第一绝缘层上形成凸起和凹陷中的至少一者。以凸起为例，在第一绝缘层的上表面使用压印版，该压印版具有与凸起对应的凹槽，以便在压印过程中形成凸起。
本公开具有凸起的第一绝缘层的有机膜结构还可以通过诸如纳米印刷的印刷方法获得。
如上描述了本公开公开的像素结构、具有该像素结构的阵列基板、具有该阵列基板的显示器件、具有该显示器件的显示面板和制造该显示器件的方法。本领域技术人员将理解，根据本公开的内容和整体教导可以对技术方案中的细节进行多种修正和替代。因此，在说明书中所描述的特定实施例仅是说明性的而不作为对本公开保护范围的限制。本公开的保护范围将在所附权利要求及其任意和所有等同技术方案给出。

Claims (21)

  1. 一种像素结构，包括第一绝缘层、由第一电极构成的第一电极层、第二绝缘层以及由多个第二电极构成的第二电极层，
    所述第一电极层设置在所述第一绝缘层上；
    所述第二绝缘层设置在所述第一电极层上；
    所述多个第二电极间隔地设置在所述第二绝缘层上，
    其中，所述第一电极层和所述第二电极层中的至少一个具有凸起和凹陷中的至少一者。
  2. 根据权利要求1所述的像素结构，其中，每个所述第二电极具有凸起或凹陷。
  3. 根据权利要求1或2所述的像素结构，其中，所述第一电极在对应于两个相邻第二电极之间的位置具有凸起或凹陷。
  4. 根据权利要求3所述的像素结构，其中，所述第一电极在对应于所述第二电极的位置具有凸起或凹陷。
  5. 根据权利要求2所述的像素结构，其中，所述第二绝缘层的表面具有凸起和凹陷中的至少一者，所述第二电极保形地覆盖在所述第二绝缘层上，以使所述第二电极具有凸起或凹陷。
  6. 根据权利要求1所述的像素结构，其中，所述第一绝缘层的表面在对应于两个相邻第二电极之间的位置具有凸起或凹陷，所述第一电极保形地覆盖在所述第一绝缘层上，以使所述第一电极在对应于两个相邻第二电极之间的位置具有凸起或凹陷。
  7. 根据权利要求6所述的像素结构，其中，所述第一绝缘层的表面进一步在对应于第二电极的位置具有凸起或凹陷，以使所述第一电极进一步在对应于第二电极的位置具有凸起或凹陷。
  8. 根据权利要求7所述的像素结构，其中，所述第二绝缘层保形地覆盖在所述第一电极上，以使所述第二绝缘层在对应于所述第二电极的位置以及两个相邻第二电极之间的位置具有凸起或凹陷；以及所述第二电极保形地覆盖在所述第二绝缘层上，以使所述第二电极具有凸起或凹陷。
  9. 根据权利要求1至8中的任一项所述的像素结构，其中，所述凸起或所述凹陷具有相同的形状。
  10. 根据权利要求1至8中的任一项所述的像素结构，其中，所述凸起或所述凹陷的形状为三角形、梯形、凸多边形、弧形中的一种或多种。
  11. 根据权利要求10所述的像素结构，其中，所述凸起或所述凹陷为等腰三角形并且所述等腰三角形的底角为30°。
  12. 根据权利要求1至8中的任一项所述的像素结构，所述第一绝缘层包括有机材料；所述第二绝缘层包括氮化硅或氧化硅。
  13. 一种阵列基板，包括根据权利要求1至12中任一项所述的像素结构。
  14. 一种显示器件，包括彩膜基板、与所述彩膜基板相对设置的阵列基板、以及在所述彩膜基板和阵列基板之间填充的液晶分子层，在所述阵列基板上设置有根据权利要求1至12中任一项所述的像素结构。
  15. 一种显示面板，包括根据权利要求14所述的显示器件。
  16. 一种用于制造显示器件的阵列基板的方法，包括如下步骤：
    在基底上形成第一绝缘层；
    在所述第一绝缘层上形成包括第一电极的第一电极层；
    在所述第一电极层上形成第二绝缘层；以及
    在所述第二绝缘层上间隔地形成多个第二电极以构成第二电极层，
    其中，所述第一电极层和所述第二电极层中的至少一个具有凸起和凹陷中的至少一者。
  17. 根据权利要求16所述的方法，其特征在于，所述第一绝缘层和所述第二绝缘层中的至少一者被形成为具有凸起和凹陷中的至少一者，并且所述第一电极层和所述第二电极层分别保形地形成在所述第一绝缘层和所述第二绝缘层上，以使所述第一电极层和所述第二电极层中的至少一个具有凸起和凹陷中的至少一者。
  18. 根据权利要求16所述的方法，其特征在于，所述第一绝缘层被形成为具有凸起和凹陷中的至少一者，并且所述第一电极层、所述第二绝缘 层和所述第二电极层依次保形地形成在所述第一绝缘层上，以使所述第一电极层对应于所述第二电极的位置以及对应于两个相邻第二电极之间的位置具有凸起或凹陷，以及每个所述第二电极具有凸起或凹陷。
  19. 根据权利要求17所述的方法，其中，通过使用半色调掩模的构图工艺在所述第一绝缘层上形成凸起和凹陷中的至少一者。
  20. 根据权利要求17所述的方法，其中，通过压印工艺在所述第一绝缘层上形成凸起和凹陷中的至少一者。
  21. 根据权利要求17所述的方法，其中，通过印刷工艺在所述第一绝缘层上形成凸起和凹陷中的至少一者。
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