WO2017212799A1 - Élément électroluminescent et son procédé de fabrication - Google Patents
Élément électroluminescent et son procédé de fabrication Download PDFInfo
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- WO2017212799A1 WO2017212799A1 PCT/JP2017/015689 JP2017015689W WO2017212799A1 WO 2017212799 A1 WO2017212799 A1 WO 2017212799A1 JP 2017015689 W JP2017015689 W JP 2017015689W WO 2017212799 A1 WO2017212799 A1 WO 2017212799A1
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- Prior art keywords
- light emitting
- electrode layer
- layer
- organic light
- lower electrode
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title description 22
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 2
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- 238000007789 sealing Methods 0.000 description 6
- -1 ITO Chemical class 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910010199 LiAl Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
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- 229910052791 calcium Inorganic materials 0.000 description 1
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- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
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- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
Definitions
- the present invention relates to a structure of a light emitting element having a plurality of light emitting modules and a method for manufacturing the same.
- organic EL Organic Electroluminescence: OLED
- OLED Organic Electroluminescence
- the organic EL has a configuration in which a pair of planar electrodes each having an organic layer on a plane sandwiched on a planar substrate is disposed. By making at least one of the planar electrodes transparent, light emitted from the organic light emitting layer is emitted to the outside via the transparent electrode. Thereby, a planar light emitter can be realized.
- a transparent surface-emitting light source can be realized by making both of the pair of planar electrodes light transmissive.
- a compound such as ITO, IZO, or ZnO may be used, but a metal such as silver, gold, copper, or aluminum may be formed as a thin film with a thickness of 30 nm or less.
- Patent Document 1 divides a light emitting element into a plurality of light emitting modules on a substrate, and shortens the distance of the transparent electrode in one light emitting element. Has been proposed.
- an insulating layer is formed on the end surface portion of the organic light emitting layer, an upper electrode layer is formed on the organic light emitting layer and the insulating layer, and the electric power of the adjacent lower electrode layer is formed.
- Connection structure is adopted.
- a high level of technology is required to align the height of the organic light emitting layer and the insulating layer, and a step is likely to occur between the organic light emitting layer and the insulating layer.
- the upper electrode layer may be disconnected at the generated step.
- the present invention has been made in view of the above problems, and it is an object of the present invention to provide a light emitting device having a structure capable of improving the reliability of an upper electrode layer.
- the light emitting device includes a substrate, and a first light emitting module and a second light emitting module arranged in parallel on the substrate, wherein the first light emitting module includes the substrate.
- a first lower electrode layer provided on the first lower electrode layer; a first organic light emitting layer provided on the first lower electrode layer; and a transparent thin film provided on the first organic light emitting layer.
- the second light emitting module includes a second lower electrode layer provided on the transparent substrate and a second organic light emitting provided on the first electrode layer. And a second upper electrode layer formed on the second organic light emitting layer and formed of a transparent thin film, wherein the first organic light emitting layer is formed on the upper surface of the second lower electrode layer.
- the first upper electrode layer is provided so as to extend to the overlapping region. Together provided along the upper surface of the first organic light emitting layer, and is electrically connected to the second lower electrode layer.
- a method of manufacturing a light emitting device as described above, wherein the step of forming the first lower electrode layer and the second lower electrode layer electrically separated on the substrate, and the step of forming the second lower electrode layer A step of forming a separator on the upper surface, and on one side of the separator, the first electrode layer is provided on the first lower electrode layer so as to extend to a region overlapping the upper surface of the second lower electrode layer.
- the first upper electrode layer is formed on the first organic light emitting layer and electrically connected to the second lower electrode layer by forming a film and separating the electrode layer by the separator. And the second And a step of the second upper electrode layer is formed on the machine-emitting layer.
- An object of the present invention is to provide a light emitting device having a structure capable of improving the reliability of the upper electrode layer.
- FIG. 2 is a cross-sectional view taken along line II-II in FIG. 4 is a cross-sectional view of the light-emitting element of Embodiment 1.
- FIG. 3 is a partial enlarged cross-sectional view of the light emitting element of the first embodiment. It is the 1st expanded sectional view showing a subject. It is the 2nd expanded sectional view showing a subject.
- FIG. 11 is an enlarged cross-sectional view illustrating a method for manufacturing the light emitting element in the second embodiment.
- FIG. 1 is a plan view showing a basic configuration of the light emitting module 1
- FIG. 2 is a cross-sectional view taken along the line II-II in FIG.
- an anode 110 as a lower electrode, an organic light emitting layer 120, and a cathode 140 as an upper electrode are laminated in this order.
- the anode 110, the organic light emitting layer 120, and the cathode 140 are sealed with a sealing member 150.
- the sealing member 150 By making the sealing member 150 transparent, the whole becomes a transparent light emitter.
- the sealing member is made opaque, it does not become a transparent light emitter, but it becomes a light emitter with a sense of depth and may be used for another usage.
- the transparent electrode (anode) 110 is exposed to the outside to constitute the anode extraction electrode 110.
- an anode auxiliary electrode 120x used for contact with the external electric wire L1 drawn out is provided on the anode 110.
- the cathode 140 is provided with a cathode auxiliary electrode 120y used for contact with the external electric wire L2 drawn to the outside.
- An insulating layer (not shown) is provided as necessary so that the anode 110 and the cathode 140 are not short-circuited.
- the electroluminescent element is constituted by the anode 110, the organic light emitting layer 120, the cathode 140, the extraction electrode 130, and the sealing member 150.
- the organic light emitting layer 120 emits light when a voltage is applied to the organic light emitting layer 120 using the anode 110 and the cathode 140.
- a flexible resin base material PET resin (polyethylene terephthalate) / PEN resin (polyethylene naphthalate) / polyimide, etc.), glass, silicon, or the like may be used.
- PET resin polyethylene terephthalate
- PEN resin polyethylene naphthalate
- polyimide polyimide
- the light emitting module 1 is a transparent light emitter
- the surface resistivity of the anode 110 and the cathode 140 are completely the same, in principle, luminance unevenness does not occur.
- the same resistance is hardly caused by differences in materials, thicknesses, and the like, and in fact, luminance unevenness always occurs.
- the anode auxiliary electrode 120x and the cathode auxiliary electrode 120y are provided as shown in FIG. 2, luminance unevenness in the vertical direction (the direction of arrow D in FIG. 1) can be suppressed, but the horizontal direction (in FIG. 1) Brightness unevenness in the direction of arrow W) still remains.
- the resistance of the anode 110 is higher than the resistance of the cathode 140, the brightness decreases as the distance from the feeding point of the anode 110 increases, as indicated by the length of arrows B1 and B2 in FIG.
- the resistance of the cathode 140 is higher than that of the anode 110, the luminance decreases as the distance from the feeding point of the cathode 140 increases.
- Embodiment 1 Light-Emitting Element 1A
- 3 is a cross-sectional view of the light-emitting element 1A
- FIG. 4 is a partial enlarged cross-sectional view of the light-emitting element 1A
- 5 and 6 are first and second enlarged cross-sectional views showing the problem.
- the same reference number is attached
- luminance unevenness can be reduced by forming a light emitting element by dividing the light emitting module as shown in FIG.
- the light emitting element 1A of the present embodiment includes a transparent substrate 100, and a first light emitting module L100 and a second light emitting module L200 arranged in parallel on the transparent substrate 100.
- a first light emitting module L100 and a second light emitting module L200 arranged in parallel on the transparent substrate 100.
- the case where two light emitting modules are arranged will be described, but a plurality of light emitting modules can be arranged in a matrix.
- the first light emitting module L100 includes a first anode 110A constituting a first lower electrode layer provided on the transparent substrate 100, a first organic light emitting layer 120A provided on the first anode 110A, And a first cathode 140A constituting a transparent first upper electrode layer provided on the first organic light emitting layer 120A.
- the second light emitting module L200 includes a second anode 110B constituting a second lower electrode layer provided on the transparent substrate 100, a second organic light emitting layer 120B provided on the second anode 110B, 2 and a second cathode 140B constituting a transparent second upper electrode layer provided on the organic light emitting layer 120B.
- first organic light emitting layer 120A is provided so as to extend to a region overlapping the upper surface of the second anode 110B, and the first cathode 140A is provided along the upper surface of the first organic light emitting layer 120A.
- the two anodes 110B are electrically connected.
- the first light emitting module L100 and the second light emitting module L200 are configured such that the external electric wire L1 ⁇ the first anode 110A ⁇ the first organic light emitting layer 120A ⁇ the first cathode 140A ⁇ the second anode 110B ⁇ the second organic light emitting layer 120B ⁇ A series connection having the second cathode 140B ⁇ the external electric wire L2 as a route is formed.
- the first organic light emitting layer 120A and the second organic light emitting layer 120B emit light.
- luminance unevenness can be reduced by dividing the light emitting module as compared with the case of FIG.
- a thin film metal is used for the transparent first cathode 140A and the transparent second cathode 140B. In this case, it is particularly important to maintain high reliability of the electrical connection between the first light emitting module L100 and the second light emitting module L200.
- the thickness of the thin film metal used for the first cathode 140A and the second cathode 140B is 30 nm or less, desirably 20 nm or less, and further desirably 10 nm or less in order to maintain the transmittance.
- the configuration of the present embodiment is important in order to use a thin film metal of 20 nm or less as a cathode.
- the configuration of the present embodiment is effective in improving the reliability.
- a thin film metal of 20 nm or less is used for the cathode, it is considered that the film thickness unevenness of the thin film metal becomes conspicuous.
- the thin film metal for example, aluminum (Al), silver (Ag), and calcium (Ca) are desirable.
- gold (Au) which has an advantage that is not easily oxidized can be considered.
- Another material is copper (Cu), which is characterized by good conductivity.
- Other materials that have good thermal and chemical properties and are not easily oxidized at high temperatures and do not cause a chemical reaction with the substrate material include platinum, rhodium, palladium, ruthenium, iridium, and osmium.
- An alloy using a plurality of metal materials may be used.
- MgAg and LiAl are often used as thin film transparent metal electrodes.
- the configuration of the present embodiment is a configuration that does not cause disconnection in the first cathode 140A and the second cathode 140B. This is effective in improving the reliability of wiring.
- first anode 110A and the first cathode 140A are different materials
- first anode 110A and the first cathode 140A have different resistivity
- second anode 110B and the second cathode 140B are different materials.
- the second anode 110B and the second cathode 140B have different resistivity.
- ITO may be used for the first anode 110A and the second anode 110B
- an Ag thin film may be used as the thin film metal for the first cathode 140A and the second cathode 140B.
- the resistivity of ITO is about 1 ⁇ 10 ⁇ 6 ⁇ m to 2 ⁇ 10 ⁇ 6 ⁇ m
- the resistivity of the Ag thin film is about 1 ⁇ 10 ⁇ 8 ⁇ m to 3 ⁇ 10 ⁇ 8 ⁇ m.
- first organic light emitting layer 120A is provided so as to extend to a region overlapping the upper surface of second anode 110B, and first cathode 140A is And provided along the upper surface of the first organic light emitting layer 120A and electrically connected to the second anode 110B.
- first cathode 140A using a thin film metal can be electrically and stably connected to the second anode 110B without disconnection.
- the first organic light emitting layer 120A is not extended to a region overlapping the upper surface of the second anode 110B, and the first cathode 140A is electrically connected to the second anode 110B.
- the first cathode 140A is partially wired on the transparent substrate 100.
- the fixability between the thin film metal and the transparent substrate 100 is poor, so that the possibility of disconnection increases.
- the insulating layer 200 is provided at the end of the first organic light emitting layer 120A, but the first organic light emitting layer 120A and the insulating layer are provided. High technology is required to make the height of 200 uniform. Therefore, when manufactured by a normal technique, there is a possibility that the first cathode 140A is disconnected at the stepped portion (region indicated by R2 in the drawing) generated between the first organic light emitting layer 120A and the insulating layer 200. There is.
- the first cathode 140 ⁇ / b> A may be disconnected even at a step portion generated between the insulating layer 200 and the second anode 110 ⁇ / b> B (region indicated by R ⁇ b> 3 in the drawing).
- the end surface of the first organic light emitting layer 120A desirably has an inclined surface TP.
- the inclined surface TP it is possible to provide the inclined surface TP by adjusting the mask conditions when forming the first organic light emitting layer 120A. Specifically, if the distance between the transparent substrate 100 and the mask is increased, the end surface of the first organic light emitting layer 120A is blurred, and the inclined surface TP is easily formed. As another method, the same processing can be performed by increasing the thickness of the mask. As another method, the inclined surface TP can also be formed by gradually increasing the opening size of the mask used for the first organic light emitting layer 120A.
- the first organic light emitting layer 120A is shown as a single layer, but actually, for example, a hole injection layer (HIL) / hole transport layer (HTL) / photon is used. It is comprised by the generation
- production layer EML: Emissive Layer
- electron transport layer ETL: Electron Transfer Layer
- EIL Electron Injection Layer
- anodes / photon generation layers / electron transport layers / cathodes include anodes / photon generation layers / electron transport layers / cathodes, anodes / hole transport layers / photon generation layers / electron transport layers / cathodes, anodes / hole transport layers / photon generation layers / Hole blocking layer / electron transport layer / made of cathode, anode / hole transport layer / photon generation layer / hole blocking layer / electron transport layer / cathode buffer layer / cathode, anode / anode buffer layer / Examples include a hole transport layer / photon generation layer unit / hole blocking layer / electron transport layer / cathode buffer layer / cathode.
- the inclined surface TP by performing film formation such as vapor deposition and sputtering while the target and the transparent substrate 100 are in a non-parallel positional relationship (oblique film formation). ).
- the angle of the inclined surface TP is preferably more gradual from the viewpoint of the connection reliability of the wiring.
- the length of the inclined surface TP is equal to the height of the first organic light emitting layer 120A. It is good that it is 5 times or more.
- the light-emitting element 1A in the present embodiment a configuration in which the end of the organic light-emitting layer extends to a plane region where the cathode and the anode of adjacent light-emitting modules overlap each other is adopted.
- the organic light emitting layer plays a role like a base layer of the upper electrode using a thin film metal, and the upper electrode is not directly formed on the transparent substrate 100 which is difficult to fix, and the light emission adjacent to the upper electrode is performed.
- the connection between the lower electrode of the module can be stabilized.
- the upper electrode using a thin film metal is formed on the same organic light-emitting layer, so that disconnection due to the disconnection of the thin film metal can be prevented.
- FIG. 7 is an enlarged cross-sectional view showing a method for manufacturing the light emitting element 1A.
- the first anode 110A and the second anode 110B are formed by, for example, a method using a mask during film formation or a method using a photolithography technique.
- the first organic light emitting layer 120A and the second organic light emitting layer 120B are also formed by, for example, a method using a mask during film formation or a method using a photolithography technique.
- the first cathode 140A and the second cathode 140B are also formed by, for example, a method using a mask during film formation or a method using a photolithography technique.
- the following manufacturing method is also effective in forming the first cathode 140A and the second cathode 140B.
- the separator 300 is formed in advance on the upper surface of the second anode 110B.
- the first organic light emitting layer 120A is formed on the first anode 110A so as to extend to a region overlapping the upper surface of the second anode 110B.
- the second organic light emitting layer 120B is formed.
- an electrode layer is formed on the first organic light emitting layer 120A and the second organic light emitting layer 120B, and this electrode layer is separated by the separator 300, thereby forming the first organic light emitting layer 120A.
- the first cathode 140A electrically connected to the second organic light emitting layer 120B is formed, and the second cathode 140B is formed on the second organic light emitting layer 120B.
- the first cathode 140A and the second cathode 140B can be patterned without using a mask, although the metal layer serving as the cathode is formed on the entire surface.
- the process using a mask requires mask alignment, and has a demerit that the patterning configuration is limited by errors of the apparatus.
- the insulating layer 200 may be provided in advance between the separator 300 and the second anode 110B.
- both the separator 300 and the insulating layer 200 are formed using a photo process (exposure, etching, baking) before forming the organic light emitting layer.
- the organic light emitting layer is not affected by the formation process of the insulating layer 200 and the separator 300.
- the separator 300 preferably has a reverse taper (the width becomes narrower toward the second anode 110B side). This can be created by using a negative photoresist and adjusting the exposure and baking conditions.
- the electrode layer can be reliably separated even if the height of the separator is lowered. Further, by reducing the height of the separator, the sealing member formed on the outside is not damaged by the separator.
- the present embodiment can also be applied to top emission type organic EL light sources and inorganic EL light sources.
- the transparent organic EL can be easily made.
- the first cathode 140A and the second cathode 140B that are formed after the organic light emitting layer is formed have strict setting conditions such as a thermal process from the viewpoint of protecting the organic light emitting layer, and it is difficult to provide a compound-based transparent electrode such as ITO. . Since the process conditions of the thin film metal film formation are gentler than that of ITO or the like, the configuration employing the thin film metal for the first cathode 140A and the second cathode 140B is a promising in view of the manufacturing process of the transparent OLED. It is one of the real solutions. In other words, the present embodiment takes into consideration a specific manufacturing process of the transparent OLED, and is particularly effective in increasing the area.
- the light-emitting element is a light-emitting element including a substrate and a first light-emitting module and a second light-emitting module arranged in parallel on the substrate, wherein the first light-emitting module includes the above-described first light-emitting module.
- the second light emitting module includes a second lower electrode layer provided on the transparent substrate, and a second organic layer provided on the first electrode layer.
- the first upper electrode layer is provided so as to extend to a region overlapping with the first upper electrode layer , Together with the provided along the top surface of the first organic light emitting layer, and is electrically connected to the second lower electrode layer.
- the transparent first upper electrode layer and the transparent second upper electrode layer are thin film metals.
- the thin film metal is thin film silver. In another embodiment, the thin film metal is a thin film of silver having a thickness of 30 nm or less.
- the end surface of the first organic light emitting layer located on the upper surface of the second lower electrode layer is an inclined surface.
- the first lower electrode layer, the second lower electrode layer, and the substrate are light transmissive.
- first lower electrode layer and the first upper electrode layer are different materials, and the second lower electrode layer and the second upper electrode layer are different materials.
- first lower electrode layer and the first upper electrode layer have different resistivities
- second lower electrode layer and the second upper electrode layer have different resistivities. is there.
- the method of manufacturing a light-emitting element according to any one of the above, wherein the first and second lower electrode layers electrically isolated on the substrate are formed. And a step of forming a separator on the upper surface of the second lower electrode layer, and on one side of the separator, on the first lower electrode layer to a region overlapping the upper surface of the second lower electrode layer Forming the first organic light emitting layer provided to extend and forming the second organic light emitting layer on the other side of the separator, the first organic light emitting layer, and the second organic light emitting layer; An electrode layer is formed on the organic light emitting layer, and the electrode layer is separated by the separator, thereby forming on the first organic light emitting layer and electrically forming the second lower electrode layer.
- the first connected Department electrode layer is formed, and a step of the second upper electrode layer is formed on the second organic light emitting layer.
- 1 light emitting module 1A light emitting element, 100 transparent substrate, 110 anode, 110A first anode, 110B second anode, 120 organic light emitting layer, 120A first organic light emitting layer, 120B second organic light emitting layer, 120x anode auxiliary electrode, 120y Auxiliary cathode electrode, 130 extraction electrode, 140 cathode, 140A first cathode, 140B second cathode, 150 sealing member, 200 insulating layer, 300 separator, L100 first light emitting module, L200 second light emitting module.
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Abstract
Dans un élément électroluminescent (1A) équipé de premier et second modules électroluminescents, qui sont disposés parallèlement les uns aux autres sur un substrat, une première couche électroluminescente organique (120A) du premier module électroluminescent est disposée de telle sorte que la première couche électroluminescente organique s'étende jusqu'à une région chevauchant la surface supérieure d'une seconde couche d'électrode inférieure (110B) du second module électroluminescent, et une première couche d'électrode supérieure (140A) du premier module électroluminescent est disposée le long de la surface supérieure de la première couche électroluminescente organique (120A), et est électriquement connectée à la seconde couche d'électrode inférieure (110B). Grâce à cette configuration, il est possible d'obtenir un élément électroluminescent, qui est pourvu d'une structure permettant d'améliorer la fiabilité d'une couche d'électrode supérieure constituée d'un film mince.
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JP2016116413 | 2016-06-10 | ||
JP2016-116413 | 2016-06-10 |
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WO2017212799A1 true WO2017212799A1 (fr) | 2017-12-14 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004071570A (ja) * | 2002-08-07 | 2004-03-04 | Eastman Kodak Co | 有機発光デバイス装置及びその製造方法 |
JP2011198540A (ja) * | 2010-03-18 | 2011-10-06 | Canon Inc | 表示装置 |
WO2012102218A1 (fr) * | 2011-01-24 | 2012-08-02 | 株式会社日立製作所 | Dispositif électroluminescent organique et son procédé de fabrication |
JP2012195288A (ja) * | 2011-03-02 | 2012-10-11 | Semiconductor Energy Lab Co Ltd | 発光装置及び照明装置 |
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2017
- 2017-04-19 WO PCT/JP2017/015689 patent/WO2017212799A1/fr active Application Filing
Patent Citations (4)
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JP2004071570A (ja) * | 2002-08-07 | 2004-03-04 | Eastman Kodak Co | 有機発光デバイス装置及びその製造方法 |
JP2011198540A (ja) * | 2010-03-18 | 2011-10-06 | Canon Inc | 表示装置 |
WO2012102218A1 (fr) * | 2011-01-24 | 2012-08-02 | 株式会社日立製作所 | Dispositif électroluminescent organique et son procédé de fabrication |
JP2012195288A (ja) * | 2011-03-02 | 2012-10-11 | Semiconductor Energy Lab Co Ltd | 発光装置及び照明装置 |
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