WO2017178296A1 - Installation de lithographie par projection pourvue d'une unité de détection de particules - Google Patents

Installation de lithographie par projection pourvue d'une unité de détection de particules Download PDF

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Publication number
WO2017178296A1
WO2017178296A1 PCT/EP2017/058092 EP2017058092W WO2017178296A1 WO 2017178296 A1 WO2017178296 A1 WO 2017178296A1 EP 2017058092 W EP2017058092 W EP 2017058092W WO 2017178296 A1 WO2017178296 A1 WO 2017178296A1
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WO
WIPO (PCT)
Prior art keywords
projection exposure
exposure apparatus
sensor unit
particles
electrical
Prior art date
Application number
PCT/EP2017/058092
Other languages
German (de)
English (en)
Inventor
Arnoldus Jan Storm
Dirk Heinrich Ehm
Stefan-Wolfgang Schmidt
Alisia WILLEMS-PETERS
Hella LOGTENBERG
Original Assignee
Carl Zeiss Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Gmbh filed Critical Carl Zeiss Smt Gmbh
Publication of WO2017178296A1 publication Critical patent/WO2017178296A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/06—Investigating concentration of particle suspensions
    • G01N15/0606—Investigating concentration of particle suspensions by collecting particles on a support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/06—Investigating concentration of particle suspensions
    • G01N15/0656—Investigating concentration of particle suspensions using electric, e.g. electrostatic methods or magnetic methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N2015/0042—Investigating dispersion of solids
    • G01N2015/0046—Investigating dispersion of solids in gas, e.g. smoke

Definitions

  • the invention relates to a projection exposure apparatus for semiconductor lithography, in particular an EUV projection exposure apparatus, by means of which structures of phase masks, so-called reticles, on semiconductor wafers for the production of semiconductor components are mapped in a known manner.
  • a plasma using tin droplets is used in such systems.
  • This tin particles regularly get to components of the system and thereby affect their function. For example, tin deposits on the collector mirror of the light source or on optical elements of the lighting system may occur. Such deposits often lead to damage to the coatings of the components as well as to a reduction in reflectivity.
  • the risk that particles reach the reticle, resulting in image defects, but also to damage and in extreme cases, the failure of this relatively complex to be manufactured component can.
  • the object of the present invention is to provide possibilities for the rapid detection of the occurrence of contaminating particles in a projection exposure apparatus for semiconductor lithography.
  • a projection exposure apparatus for semiconductor lithography, for example an EUV projection exposure apparatus, comprises a device for detecting particles in the system.
  • the device contains a sensor unit for receiving particles and an evaluation unit for detecting the particles received by the sensor unit.
  • the evaluation unit is connected to the sensor unit during operation of the projection exposure apparatus and is suitable for determining the arrival or presence of particles from an electrical state variable.
  • the evaluation unit is connected to the sensor unit during the operation of the projection exposure apparatus, monitoring of the particle volume is achieved in real time, which up to now was not possible according to the prior art.
  • the system can be switched off to protect against unacceptable damage to components.
  • the real-time monitoring referred to allows conclusions to be drawn from the coincidence of system events with increased particle volume on upcoming problems. If, for example, the actuation of a mechanical actuator correlates with an increased emission of particles, it may be concluded that an associated mechanical bearing has increased friction coefficients and abrasion occurs. The bearing in question can then be replaced before it reaches a critical state, that is, fails or represents a danger to the function of the adjacent optical components by further enhancing the particle emission.
  • the sensor unit shows a receiving area on which particles can accumulate.
  • This receiving area can be positioned in particular in the facility where the increased emergence of particles is problematic, for example in the area of the reticle, the intermediate focus of the illumination system or on a frame of a mirror.
  • the receiving area does not necessarily have to be positioned at the places of interest mentioned above. It may also be sufficient for certain applications, for example, to maintain the required vacuum to arrange the Absaugmünditch of vacuum pumps in the areas of interest and detached to mount the receiving area of the Absaugmünditch in the respective suction. In this case, there may be advantages in terms of the accessibility of the sensor unit, for example for maintenance or cleaning purposes.
  • the sensor unit can be arranged, for example, in the region of a field facet mirror in an illumination system, in particular on that side of the field facet mirror which faces the incident electromagnetic radiation used for imaging in the system, the so-called useful radiation. It is advantageous if the sensor unit is indeed in the range of the EUV illumination, but not in the useful range. This area is typically referred to as overbeam area.
  • the useful range is understood to be that region on the facet mirror which is achieved by electromagnetic radiation involved in the imaging. As a rule, however, the illuminated area on the facet mirror is larger than the useful area.
  • This arrangement of the sensor unit has the advantage that the sensor unit provides realistic information about the particle loading of the field facet mirror.
  • the sensor unit can be cleaned in such an arrangement, if necessary, by means of cleaning heads already present for cleaning the Feldfacettenadors anyway. Furthermore, in this variant, if necessary, an exchange of the sensor unit by the adjacent in the housing of the lighting system ange- arranged service opening of the lighting system.
  • Advantageous distances of the sensor unit from the surface of the mirror facets of the field facet mirror are in the range of 5 to 500 mm, preferably in the range of 5 to 100 mm.
  • the sensor unit may be arranged on a field facet mirror in a lighting system.
  • free surfaces on the already present mirror support of the field facet mirror can be advantageously used for this purpose and it remains possible to use the samples, which are not addressed in real time in real time - the so-called witness samples - in the usual places for them as additional measures Particle monitoring in the system to leave.
  • This variant also shows the advantages already mentioned in the introduction of realistic particle measurement and cleaning by the cleaning heads provided for the field facet mirror.
  • the sensor unit may be on a Pupillenfacet- tens mirror or G-mirror in a lighting system.
  • the G mirror which is also commonly referred to as a grazing incidence mirror, is located geometrically in an illumination system of a projection exposure apparatus directly at the transition to the holding device for a reticle to be imaged, the so-called reticle stage. Particles on the reticle are generally extremely critical, since they are imaged on a semiconductor substrate to be exposed, the so-called wafer, 1: 1. Particle protection of the reticles is thus desired.
  • a sensor unit is placed between the G mirror and the reticle stage, it can also be used as an alarm sensor for possible contamination of the reticle.
  • the additional use of a valve between the illumination system and the reticle which closes when triggered by the sensor unit in cooperation with the evaluation when exceeding a critical number of detected particles alarm, represents a useful variant of the invention.
  • the sensor unit is arranged in an area which is achieved during operation of the projection exposure apparatus by the electromagnetic radiation used for the exposure. Also in this case is an arrangement the sensor unit in the overjet area advantageous.
  • the general advantage of the placement in the EUV beam path is that the particles from the light source almost exclusively follow the gas flow in the mini-environment, which is almost congruent with the beam path. Thus, a very high coverage can be achieved.
  • the sensor unit can be arranged on a support structure of a lighting system.
  • a support structure of a lighting system In this way, it is comparatively easy to obtain information about the particle distribution within the illumination system, in particular because particles from the light source have an angular distribution predetermined by the intermediate focus shaping when entering the mini-environment of the illumination system formed by the support structure. Taking into account the o.g. Shock processes, there is a significant probability that the particles reach the support structure.
  • the electrical state variable may in particular be an electrical resistance. Since electrical resistances of circuits are easily measurable, an easily evaluable sensor can be realized in this way.
  • the electrical state variable may be a capacitance
  • a sensor unit may, for example, have at least one current path with a discontinuous element.
  • the impact of particles on the sensor unit can then be determined in a simple manner on the basis of the then present change in the respective electrical state variable. So, for example in those cases in which a short circuit is produced by the impact of an electrically conductive particle, the particles are detected by a sharply decreasing electrical resistance in the interruption region.
  • a particularly effective detection of particles can be achieved in that the interruption region has conductor structures which mesh with one another like a comb and are electrically insulated from one another.
  • the structures forming the teeth of the combs or the spacing of the teeth may have widths in the range from 60 nm to 1000 nm, in particular from 60 nm to 100 nm.
  • widths in the range from 60 nm to 1000 nm, in particular from 60 nm to 100 nm.
  • a spatially resolved detection of particles can be achieved, in particular, by arranging a plurality of interruption areas flat on the sensor unit.
  • interruption regions are each electrically contacted individually, a simple spatially resolved measurement can take place on the surface of the sensor unit due to the unique addressing of the interruption regions on the surface of the sensor unit.
  • the interruption region may be covered by an electrically insulating layer.
  • a conductive particle such as a tin particle
  • the electrical properties of the interruption region would change at least briefly at the moment of impact. If a preferably constant bias voltage were applied to such an arrangement, then a small tunnel current would flow, the magnitude of which would also change briefly when the particle strikes. In this way, it becomes possible to measure a plurality of impinging particles with a single interruption range, without the interruption - In contrast to the case described above - consumed by the occurrence of an induced by the particle electrical short circuit.
  • a measurement of the capacitance of the capacitor formed by the last-described arrangement would allow a particle detection even when non-conductive particles hit, depending on the particle size, the dielectric constant of the particles, the electrode geometry or other parameters of the device.
  • the electrical state variable may in particular also be a signal form of an electrical signal.
  • This variant is used in particular when the sensor unit contains a so-called delay-line detector.
  • a detector usually has a closed, meandering conductor which is either applied to a substrate or realized using strained wires. A charged particle impinging on the conductor triggers an electrical pulse in the direction of both conductor ends, on the basis of which the location of the impact can be determined. Also, such a detector can detect a plurality of successive events. Uncharged particles can be detected by applying an electrical pulse to the conductor in conjunction with a transit time measurement.
  • a detailed description of an exemplary delay line detector which is also known by its inventor under the name "Schmidt Böcking detector" can be found in the European patent application EP 1 124 129 A2, the contents of which are hereby incorporated in full.
  • the sensor unit can be designed to be movable.
  • a movable sensor unit can be used in particular during exposure pauses for the measurement of particle concentrations in the beam path of the system.
  • the sensor unit can be swung out of the beam path.
  • a cyclic cleaning especially of the sensor unit without the need for a removal or change can be achieved in that the sensor unit is provided with a voltage source through which a current can be generated, wel rather due to the heat generated by it leads to the detachment of deposited on the sensor unit particles. In many cases, it can also be enough
  • melting temperature of tin which is at about 231 ° C, so that a tin particles liquefied and thus easier to remove. It is also conceivable to produce temperatures that lead to the vaporization of a tin particle.
  • an effective cleaning of a sensor unit can also be achieved in that it is arranged in an area which is reached by an already existing in the system cleaning head. This may be the case, in particular, when a sensor unit is mounted in the overflow area already mentioned above.
  • At least one valve for at least partially closing off a partial volume of the projection exposure apparatus can be present in relation to a further component of the projection exposure apparatus, wherein the valve can be activated by means of the evaluation unit.
  • the valve can be activated by means of the evaluation unit.
  • a targeted foreclosure of the other component of the system can be triggered with increased particle volumes.
  • the further component may in particular be a light source, a reticle holder or a wafer holder.
  • Figure 1 is a schematic representation of an EUV projection exposure apparatus with various embodiments of the invention
  • FIG. 2 shows a variant of the invention
  • FIG. 3 shows a first embodiment of a sensor unit according to the invention
  • FIG. 4 shows a further embodiment of a sensor unit according to the invention.
  • Figure 5 shows a third embodiment of a sensor unit according to the invention.
  • FIG. 1 shows an example of the basic structure of an EUV projection exposure apparatus 100 for microlithography, in which the invention can be applied.
  • An illumination system 102 of the projection exposure apparatus 100 arranged in a schematically indicated support structure 101 has, in addition to a light source 103, an illumination optics 104 for illuminating an object field 105 in an object plane 106. Illuminated is a reticle 107, which is arranged in the object plane 106 and is held by a schematically illustrated reticle holder 108.
  • a structure on the reticle 107 is shown on a photosensitive layer of a wafer 1 12 arranged in the image plane 11 1 in the region of the image field 110, which wafer is held by a wafer holder 1 13, which is likewise shown as a detail.
  • the light source 103 can emit useful radiation 1 14, in particular in the range between 5 nm and 30 nm.
  • a useful radiation 1 14 generated by the light source 103 is aligned by means of a collector integrated in the light source 103 in such a way that it passes through an intermediate focus in the region of an intermediate focus plane 15 before striking a field facet mirror 16.
  • the useful radiation 1 14 is reflected by a pupil facet mirror 1 17.
  • field facets of the field facet mirror 1 16 are imaged into the object field 105.
  • the two are each by means of a holder 1, 1 'at the Support structure 101 arranged sensor units 2.
  • the first sensor unit 2 is arranged in a region which is not reached during operation of the projection exposure apparatus 100 of the electromagnetic radiation used for exposure.
  • the sensor unit 2 is designed to be movable.
  • the sensor unit 2 is moved into areas which will pass through the useful radiation during the operation of the projection exposure apparatus 100. This can be done in particular during exposure pauses, preferably when the light source is activated.
  • the sensor unit 2 can be removed from the region of the useful radiation.
  • the second sensor unit 2 is located in the region of the field facet mirror 16 and is furthermore located in the light path of the useful radiation of the projection exposure apparatus 100, although preferably as already mentioned in the overexposed area.
  • the particle load of the field facet mirror 1 16 can be reliably determined in real time by means of the evaluation unit 3 connected via the signal line 4 to the sensor unit 2 and if a critical particle load occurs, emergency measures, such as switching off the light source 103, can be initiated.
  • valves 200, 201, 204 or 206 which are likewise recognizable in the FIGURE, which are connected to the evaluation unit 3 via the control lines 202, 203, 205 or 207, can be closed in order to open the interior of the illumination system 102 or to protect the reticle 107 from contamination.
  • This positioning of the sensor unit 2 is advantageous in particular because the particles enter the illumination system at the designated point in the event of increased particle ejection of the light source 103 In this way, an early detection of particles can be ensured and also a closing of the valve 200 in particular can be initiated.
  • the other two sensor units 2 the on the pupil facet mirror 1 17 and the G-mirror 121 are arranged. In contrast to the sensor unit 2 arranged in the region of the field facet mirror 16, however, these two sensor units 2 are arranged outside the range reached by the useful radiation. In particular, in the case in which the sensor unit 2 arranged on the G mirror 121 detects an increased particle volume, closing of, for example, the valve 201 can be initiated.
  • FIG. 2 shows a variant of the invention in which sensor units 2 are arranged on free areas between field facet blocks 5 on a base body 6 of a field facet mirror 16.2.
  • the signal connections to an evaluation unit likewise not shown in FIG. 2 are omitted in the illustration shown.
  • this variant offers the possibility of a particularly space-saving arrangement of the sensor units 2.
  • FIGS. 1-10 exemplary embodiments of the sensor unit 2 are shown in FIGS.
  • FIG. 3 shows by way of example a possible embodiment of a sensor unit 2.3 according to the invention.
  • the sensor unit 2.3 shows a current path with an interruption region, which has comb-like, intermeshing conductor structures 7 which are arranged on an insulating substrate 8 and are electrically insulated from one another. Connected to the conductor structures 7 is formed as an ohmmeter evaluation unit 3.3, by which an electrical short circuit can be detected. Such a short circuit is created, for example, by the tin particles 9 also indicated in the figure.
  • Figure 4 shows a variant in which said interruption areas are arranged flat on a sensor unit 2.4.
  • the respective contact can be done individually or in parallel. In the case of a single contact, a spatially resolved measurement is possible. If the structures shown in FIGS. 3 and 4 are provided with an insulating cover layer, impinging particles generally do not cause any change in the resistance of the interruption region, but the electrical properties of the capacitor thus created can also be used to determine the particle volume at the location of the sensor unit be made.
  • FIG. 5 schematically shows an embodiment of the invention in which a delay line detector 10 is realized by means of a sensor unit 2.5.
  • a closed, meander-shaped conductor 11 is connected to a schematically indicated evaluation unit 3.5, by means of which the duration of an electrical pulse in the closed conductor 11 can be determined.
  • the evaluation unit 3.5 may be passive or active.
  • a passive evaluation unit registers electrical pulses resulting from the impact of a charged particle 9 indicated in the figure.
  • An active evaluation unit itself generates electrical pulses and determines from the signal response of the system, that is to say in particular from the transit time of the pulses in the conductor 11 or the occurrence of reflections or the like. the presence or possibly the location of particles 9 on the conductor 1 1.
  • an active evaluation unit in particular, uncharged particles can also be detected.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Plasma & Fusion (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne une installation de lithographie par projection (100) destinée à la lithographie de l'industrie des semi-conducteurs, comprenant un dispositif de détection de particules se trouvant dans l'installation. Ainsi le dispositif contient une unité de détection (2) destinée à la réception de particules et une unité d'évaluation (3) destinée à la détection des particules reçues dans l'unité de détection (2). L'unité d'évaluation (3) est, pendant le fonctionnement de l'installation de lithographie par projection (100), reliée à l'unité de détection (2) et appropriée pour déterminer l'arrivée ou la présence de particules à partir d'une grandeur d'état électrique.
PCT/EP2017/058092 2016-04-13 2017-04-05 Installation de lithographie par projection pourvue d'une unité de détection de particules WO2017178296A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016206210.7 2016-04-13
DE102016206210.7A DE102016206210A1 (de) 2016-04-13 2016-04-13 Projektionsbelichtungsanlage mit Sensoreinheit zur Partikeldetektion

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EP4209840A1 (fr) * 2022-01-11 2023-07-12 ASML Netherlands B.V. Appareil optique
EP4273626A1 (fr) * 2022-05-04 2023-11-08 ASML Netherlands B.V. Dispositif et procédé de mesure de contamination et appareil lithographique doté dudit dispositif

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EP1124129A2 (fr) 2000-02-11 2001-08-16 Roentdek Handels GmbH Dispositif et méthode de détection de particules ou de rayonnement magnétique à deux dimensions
US20050225308A1 (en) * 2004-03-31 2005-10-13 Orvek Kevin J Real-time monitoring of particles in semiconductor vacuum environment
JP2007013054A (ja) * 2005-07-04 2007-01-18 Nikon Corp 投影露光装置及びマイクロデバイスの製造方法
WO2015055374A1 (fr) * 2013-10-16 2015-04-23 Asml Netherlands B.V. Source de rayonnement, procédé de fabrication d'un appareil lithographique, système de détection et procédé de détection

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EP1124129A2 (fr) 2000-02-11 2001-08-16 Roentdek Handels GmbH Dispositif et méthode de détection de particules ou de rayonnement magnétique à deux dimensions
US20050225308A1 (en) * 2004-03-31 2005-10-13 Orvek Kevin J Real-time monitoring of particles in semiconductor vacuum environment
JP2007013054A (ja) * 2005-07-04 2007-01-18 Nikon Corp 投影露光装置及びマイクロデバイスの製造方法
WO2015055374A1 (fr) * 2013-10-16 2015-04-23 Asml Netherlands B.V. Source de rayonnement, procédé de fabrication d'un appareil lithographique, système de détection et procédé de détection

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