WO2017177983A1 - 气敏传感器报警电路 - Google Patents

气敏传感器报警电路 Download PDF

Info

Publication number
WO2017177983A1
WO2017177983A1 PCT/CN2017/080805 CN2017080805W WO2017177983A1 WO 2017177983 A1 WO2017177983 A1 WO 2017177983A1 CN 2017080805 W CN2017080805 W CN 2017080805W WO 2017177983 A1 WO2017177983 A1 WO 2017177983A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas sensor
voltage
field effect
effect transistor
gas
Prior art date
Application number
PCT/CN2017/080805
Other languages
English (en)
French (fr)
Inventor
韩宁
武晓峰
陈运法
Original Assignee
中国科学院过程工程研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中国科学院过程工程研究所 filed Critical 中国科学院过程工程研究所
Priority to EP17781959.6A priority Critical patent/EP3444597A4/en
Priority to JP2018515863A priority patent/JP6711905B2/ja
Publication of WO2017177983A1 publication Critical patent/WO2017177983A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0062—General constructional details of gas analysers, e.g. portable test equipment concerning the measuring method or the display, e.g. intermittent measurement or digital display
    • G01N33/0063—General constructional details of gas analysers, e.g. portable test equipment concerning the measuring method or the display, e.g. intermittent measurement or digital display using a threshold to release an alarm or displaying means
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
    • G08B21/02—Alarms for ensuring the safety of persons
    • G08B21/12—Alarms for ensuring the safety of persons responsive to undesired emission of substances, e.g. pollution alarms
    • G08B21/14—Toxic gas alarms
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
    • G08B21/02—Alarms for ensuring the safety of persons
    • G08B21/12—Alarms for ensuring the safety of persons responsive to undesired emission of substances, e.g. pollution alarms
    • G08B21/16—Combustible gas alarms

Definitions

  • a gas sensor alarm circuit belongs to the electronic field such as a gas sensor and an alarm.
  • Semiconductor gas sensors have important applications in the detection and alarm of flammable and explosive gases, toxic and harmful gases, air pollution gases, and food hygiene related gases.
  • the working principle of the semiconductor gas sensor is that the resistance of the semiconductor material changes with the concentration of the gas to be measured at a certain temperature.
  • V DD is the test voltage
  • V OUT is the output voltage signal
  • R L is the load resistance
  • nR SENSOR is the n-type oxide semiconductor gas sensor
  • the change, in series with the load resistor R L ultimately results in a change in the load resistance R L or the partial pressure across the gas sensor nR SENSOR .
  • This change in partial pressure can drive an external circuit alarm or display the concentration information of the gas to be tested by digital-to-analog conversion.
  • the commercial alarm device for example, Zhengzhou Yusheng product MP503, and Japan's Figaro product TGS2602
  • most of the research papers and patents such as CN103729970A, CN204129920U
  • some products also use a varistor that can be artificially adjusted (such as patent CN103558260B), in order to flexibly adjust the circuit parameters.
  • a load resistor may be substituted as a gas sensor, as shown in FIG, V DD voltage test 2, V OUT is an output voltage signal, pR SENSOR is a p-type oxide semiconductor gas
  • the varistor, nR SENSOR is an n-type oxide semiconductor gas varistor, which is matched with the characteristic parameters of two gas sensors nR SENSOR and pR SENSOR to improve the sensitivity and specific response of the detection gas (Han et al., Sensors and Actuators B). : Chemical, 2009, 138: 228; Wu Xinghui, Wang Caijun, Sensors and Signal Processing, Electronic Industry Press, 1997).
  • the gas sensor alarm circuit provided by the present disclosure can improve the intelligence level of the gas sensor alarm circuit, and improve the alarm capability of the circuit through the self-feedback function of the field effect transistor.
  • the self-feedback effect of the field effect transistor is the difference between the present disclosure and the alarm circuit in the related art.
  • the present disclosure provides a self-feedback circuit including a gas sensor and a voltage dividing circuit, wherein the voltage dividing transistor
  • the circuit includes a field effect transistor, and the source and drain of the field effect transistor are connected in series; the voltage division of the partial pressure of the gas sensitive resistor and the voltage division of the voltage dividing circuit is increased as a voltage output of the self feedback circuit.
  • the gate of the field effect transistor is shorted to its source or drain; the voltage division of the gas sensitive resistor and the partial pressure of the divided voltage of the field effect transistor are output as a voltage.
  • a p-channel field effect transistor when a p-channel field effect transistor is used, its gate is shorted to the drain; when an n-channel field effect transistor is used, its gate is shorted to the source.
  • the n-type semiconductor gas sensor is used to test the reducing gas and the p-type semiconductor gas sensor is used to test the oxidizing gas
  • the partial pressure of the field effect transistor is taken as a voltage output; and the oxidizing property is tested by using an n-type semiconductor gas sensor.
  • the partial pressure of the gas sensor is taken as a voltage output.
  • the field effect transistor is of an enhanced or depleted type.
  • the gas sensor is a sensor that operates at room temperature or a gas sensor that operates at a certain temperature after being heated by a heating circuit.
  • the voltage dividing circuit comprises a field effect transistor and a series resistor, the gas sensor of the gas sensor and the source and the drain of the field effect transistor are connected in series through the series resistor; the source or the drain of the field effect transistor is connected in series
  • the resistor is connected to the gate of the field effect transistor; the voltage division of the gas sensitive resistor, and the voltage division among the common division voltage of the field effect transistor and the series resistor is used as a voltage output.
  • the n-type semiconductor gas sensor when used to test the reducing gas and the p-type semiconductor gas sensor is used to test the oxidizing gas, the partial voltage common to the field effect transistor and the series resistor is used as an alarm voltage output; and the n-type semiconductor gas is used.
  • the sensitive sensor tests the oxidizing gas and tests the reducing gas using the p-type semiconductor gas sensor, the partial pressure of the gas sensor is taken as the alarm voltage output.
  • the field effect transistor is of an enhanced or depleted type.
  • the gas sensor is a sensor that operates at room temperature or a gas sensor that operates at a certain temperature after being heated by a heating circuit.
  • the gate of the field effect transistor is shorted to its source or drain; the voltage division of the gas sensitive resistor and the voltage division of the divided voltage of the field effect transistor are output as a voltage.
  • the voltage dividing circuit comprises a field effect transistor and a series resistor, and the gas sensor is gas sensitive
  • the source and drain of the resistor and the field effect transistor are connected in series via a series resistor; the source or drain of the field effect transistor is connected to the gate of the field effect transistor through a series resistor; the voltage division of the gas sensitive resistor, and the field effect transistor and the series connection The decrease in the common voltage division of the resistor is increased as a voltage output.
  • the partial pressure of the gas sensor is taken as a voltage output; and the oxidizing property is tested by using an n-type semiconductor gas sensor.
  • the partial pressure of the field effect transistor is taken as a voltage output.
  • the partial pressure of the gas sensor is taken as a voltage output; and the oxidizing property is tested by using an n-type semiconductor gas sensor.
  • the partial pressure of the field effect transistor is taken as a voltage output.
  • the present disclosure also provides a gas sensor alarm circuit, including the above self-feedback circuit and an alarm display circuit; wherein the alarm display circuit includes at least one of a buzzer, a light emitting diode LED, and a relay, an operational amplifier, and a triode, a voltage output of the self-feedback circuit is coupled to the operational amplifier and the triode, driving at least one of the buzzer, the LED, and the relay to perform an alarm; or the alarm display circuit includes a voltage reader The voltage output is coupled to the voltage reader, the voltage output is used as an alarm voltage, and the voltage reader is configured to digitally output the alarm voltage.
  • the working principle of the gas sensor alarm circuit connected according to the above method is: when the gas sensor detects the gas to be tested, the resistance value of the gas sensor of the gas sensor will change.
  • the change in resistance causes a change in the current in the circuit, causing a change in the partial pressure of the series device. Since the gate of the FET is shorted to the source or drain, or the gate of the FET is connected to the source or drain through a series resistor, the change in the voltage division of the FET will cause the gate to be charged. The change in pressure.
  • the gate voltage acts as a self-feedback to the change in circuit current, enhancing the change in partial voltage due to changes in the resistance of the gas sensor. After continuous self-feedback regulation, the alarm voltage at steady state is higher than the output voltage of the load voltage circuit using a fixed resistor in the related art, thereby improving the alarm capability of the circuit.
  • FIGS. 1-13 In order to clearly illustrate the following embodiments, the following detailed description will be made using FIGS. 1-13.
  • 1 is a self-feedback circuit for measuring a reducing gas of an n-type gas sensor of a fixed resistor used in the related art
  • 2 is a self-feedback circuit for measuring a reducing gas by a p-type gas sensor and an n-type gas sensor used in the related art;
  • Embodiment 3 is a self-feedback circuit for testing a reducing gas in series using an n-type gas sensor and a p-type field effect transistor in Embodiment 1;
  • Embodiment 5 is a self-feedback circuit for testing a reducing gas in series using a p-type gas sensor and an n-type field effect transistor in Embodiment 3;
  • FIG. 6 is a self-feedback circuit for testing a reducing gas in series using an n-type gas sensor and an n-type field effect transistor in Embodiment 4;
  • Embodiment 8 is a self-feedback circuit for testing an oxidizing gas in series using an n-type gas sensor and a p-type field effect transistor in Embodiment 6;
  • Embodiment 9 is a self-feedback circuit for testing an oxidizing gas in series using a p-type gas sensor and an n-type field effect transistor in Embodiment 7;
  • Embodiment 10 is a self-feedback circuit for testing an oxidizing gas in series using an n-type gas sensor and an n-type field effect transistor in Embodiment 8;
  • Figure 11 is a first embodiment of a gas sensor alarm circuit
  • FIG. 12 is a second embodiment of a gas sensor alarm circuit provided by an embodiment
  • FIG. 13 is a third embodiment of a gas sensor alarm circuit provided by an embodiment.
  • the heating circuit is not shown, and the heating circuit is included in the sensor resistance.
  • V DD is the test voltage
  • V OUT is the output voltage signal
  • nR SENSOR is the n-type oxide semiconductor gas sensor
  • p-FET is the p-type field effect transistor
  • G, D, and S are the field effects. The gate, drain and source of the transistor.
  • the gas sensitive resistor nR SENSOR of the n-type oxide semiconductor SnO 2 gas sensor is connected in series with the p-type field effect transistor p-FET, the first terminal of the gas sensitive resistor is connected to the positive voltage V DD , and the second end of the gas sensitive resistor is connected to the transistor p-
  • the drain D of the FET, the source S of the transistor p-FET is grounded, the gate G is shorted to the drain D, and the voltage across the drain D of the transistor p-FET and the ground is the output voltage Vout.
  • the gate G of the transistor p-FET is shorted to the drain D, the gate voltage is increased in synchronization with the drain voltage, resulting in a decrease in current in the p-type transistor.
  • the decrease in the current of the series circuit leads to a decrease in the voltage division across the gas sensor, and the partial pressure on the transistor p-FET increases, which is self-feedback.
  • the output voltage Vout across the transistor p-FET at the steady state is 1.5 times higher than the output voltage of the voltage dividing circuit of the fixed resistor in the related art.
  • the gas sensor in the embodiment detects ozone, the voltage division on the transistor p-FET is reduced, and the voltage across the drain D and the ground of the transistor p-FET can be taken as the output voltage Vout. .
  • V DD is the test voltage
  • V OUT is the output voltage signal
  • pR SENSOR is the p-type oxide semiconductor gas sensor
  • p-FET is the p-type field effect transistor
  • G, D, and S are the field effects. The gate, drain and source of the transistor.
  • the gas-sensitive resistor pR SENSOR of the p-type oxide semiconductor Cu 2 O gas sensor is connected in series with the p-type field effect transistor p-FET, and the drain D of the transistor p-FET is connected to the test voltage positive V DD , the source of the transistor p-FET S is connected to the first end of the gas sensitive resistor, the second end of the gas sensitive resistor is grounded, the gate G of the transistor p-FET is shorted to the drain D, and the voltage across the gas sensitive resistor is the output voltage Vout.
  • the gas sensor detects hydrogen gas
  • the resistance of the gas sensor of the gas sensor increases, causing the current in the circuit to decrease, and the voltage between the source and the drain of the transistor p-FET to decrease.
  • the gate G of the transistor p-FET is shorted to the drain D, the gate voltage decreases synchronously with the drain voltage, resulting in an increase in current in the p-type transistor.
  • the increase in the current of the series circuit leads to an increase in the partial pressure of the gas sensitive resistor, which is self-feedback.
  • the output voltage across the gas-sensing resistor at the steady state is twice as high as the output voltage of the fixed resistor divider circuit in the related art.
  • the gas sensor in the present embodiment detects nitrogen dioxide, the partial pressure of the gas sensor is reduced, and the voltage across the gas sensor can be taken as the output voltage Vout.
  • V DD is the test voltage
  • V OUT is the output voltage signal
  • pR SENSOR is the p-type graphene gas sensor
  • n-FET is the n-type field effect transistor
  • G, D, and S are the field effect transistors, respectively.
  • the gate, drain and source, R 0 is a series resistor.
  • the gas sensitive resistor pR SENSOR of the p-type oxide semiconductor LaFeO 3 gas sensor is connected in series with the n-type field effect transistor n-FET, the drain of the transistor n-FET is connected to the positive voltage V DD of the test voltage, one end of the gas sensitive resistor is grounded, and the transistor n-FET the source S through a fixed series resistor R 0 connected to the gate G, take the partial pressure of gas-sensitive resistor output voltage Vout.
  • the gas sensor detects formaldehyde the resistance of the gas sensor of the gas sensor increases, causing the current in the circuit to decrease, and the voltage between the source and the drain of the transistor n-FET to decrease.
  • the decrease in current causes the gate voltage to increase, resulting in an increase in current in the n-type field effect transistor.
  • the increase in the current of the series circuit leads to an increase in the partial pressure on the gas sensor, which is self-feedback.
  • the output voltage across the gas-sensing resistor at the steady state is 1.5 times higher than the output voltage of the fixed resistor divider circuit in the related art.
  • the partial pressure of the gas sensor is reduced, and the partial pressure of the gas sensor can be taken as the output voltage Vout.
  • V DD is the test voltage
  • V OUT is the output voltage signal
  • nR SENSOR is the n-type oxide semiconductor gas sensor
  • n-FET is the n-type field effect transistor
  • G, D, and S are field effects, respectively.
  • the gate, drain and source of the transistor, R 0 is a series resistor.
  • the gas-sensitive resistor of the n-type oxide semiconductor ZnO gas sensor is connected in series with the n-type field effect transistor n-FET, one end of the gas sensor is connected to the test voltage positive V DD , and the source S of the transistor n-FET is passed through a fixed resistor R 0 and The gate is connected, and the voltage across the transistor n-FET and the fixed resistor is the output voltage Vout.
  • the resistance of the gas sensor of the gas sensor decreases, resulting in an increase in current in the circuit and an increase in voltage between the source and the drain of the transistor.
  • V DD is the test voltage
  • V OUT is the output voltage signal
  • pR SENSOR is the p-type oxide semiconductor gas sensor
  • p-FET is the p-type field effect transistor
  • G, D, and S are the field effects.
  • the gas resistance of the p-type graphene gas sensor is in series with the p-type field effect transistor p-FET.
  • One end of the gas sensor is connected to the test voltage positive V DD , the source S of the transistor p-FET is grounded, and the gate G is shorted to the drain. D, taking the voltage across the transistor p-FET as the output voltage Vout.
  • the resistance of the gas sensor of the gas sensor decreases, causing the current in the circuit to rise and the voltage between the source and the drain of the transistor p-FET to increase. Since the gate and drain of the transistor p-FET are shorted, the gate voltage increases in synchronization with the drain voltage, resulting in a decrease in current in the p-type field effect transistor.
  • the decrease in the current of the series circuit causes the partial voltage on the sensor to decrease, and the partial pressure on the transistor increases, which is self-feedback.
  • the output voltage across the transistor at steady state is 1.5 times higher than the output voltage of the fixed resistor divider circuit in the related art. As shown in FIG. 7, when the gas sensor in the embodiment detects hydrogen gas, the voltage across the transistor p-FET is reduced, and the voltage across the transistor p-FET can be taken as the output voltage Vout.
  • V DD is the test voltage
  • V OUT is the output voltage signal
  • pR SENSOR is the p-type copper phthalocyanine semiconductor gas sensor
  • p-FET is the p-type field effect transistor
  • G, D, and S are respectively The gate, drain and source of the effect transistor.
  • the gas sensor of the n-type oxide semiconductor TiO 2 gas sensor is connected in series with the p-type field effect transistor p-FET, the first end of the gas sensor is grounded, the gate G of the transistor p-FET is shorted to the drain D, and the drain D Connect the test voltage positive V DD , the source S is connected to the second end of the gas sensitive resistor, and the voltage across the gas sensitive resistor is the output voltage.
  • the resistance of the gas sensor of the gas sensor increases, resulting in a decrease in current in the circuit and a decrease in voltage between the source and the drain of the transistor. Since the transistor gate is shorted to the drain, the gate voltage decreases synchronously with the drain voltage, resulting in an increase in current in the p-type transistor.
  • the increase in current in the series circuit results in an increase in the partial pressure across the sensor, which is self-feedback.
  • the output voltage across the gas-sensing resistor at the steady state is twice as high as that of the fixed resistor divider circuit in the related art. As shown in FIG. 8, when the gas sensor in the embodiment detects alcohol, the partial pressure of the gas sensor is reduced, and the partial pressure of the gas sensor can be taken as the output voltage Vout.
  • V DD is the test voltage
  • V OUT is the output voltage signal
  • nR SENSOR is the n-type oxide semiconductor gas sensor
  • n-FET is the n-type field effect transistor
  • G, D, and S are field effects, respectively.
  • the gate of the transistor, the drain and source, R 0 is the series resistance.
  • the gas resistance of the n-type oxide semiconductor In 2 O 3 gas sensor is in series with the n-type field effect transistor n-FET, the drain of the transistor n-FET is connected to the test voltage positive V DD , one end of the gas sensitive resistor is grounded, and the source S Connected to the source S through a fixed resistor R 0 , the divided voltage of the gas sensitive resistor is the output voltage Vout.
  • the resistance of the gas sensor of the gas sensor increases, causing the current in the circuit to decrease and the voltage between the source and the drain of the transistor to decrease. Since the source of the transistor is connected to the gate through a fixed resistor, a decrease in current causes an increase in the gate voltage, resulting in an increase in current in the n-type field effect transistor.
  • the increase in the current of the series circuit leads to an increase in the partial pressure across the gas sensor, which is self-feedback.
  • the output voltage Vout across the gas-sensitive resistor at the steady state is 1.5 times higher than the output voltage of the fixed resistor divider circuit in the related art. As shown in FIG. 3, when the gas sensor in the present embodiment detects methane, the partial pressure of the gas sensitive resistor is reduced, and the partial pressure of the gas sensitive resistor can be taken as the output voltage Vout.
  • V DD is the test voltage
  • V OUT is the output voltage signal
  • nR SENSOR is the n-type oxide semiconductor gas sensor
  • n-FET is the n-type field effect transistor
  • G, D, and S are field effects, respectively.
  • the gate, drain and source of the transistor, R 0 is a series resistor.
  • the gas-sensitive resistor of the p-type organic semiconductor copper phthalocyanine gas sensor is connected in series with the n-type field effect transistor n-FET.
  • One end of the gas sensitive resistor is connected to the test voltage positive terminal V DD , and the source S of the transistor n-FET is passed through a fixed resistor R 0 is connected to the gate G, and the voltage across the transistor n-FET and the fixed resistor is the output voltage Vout.
  • the resistance of the gas sensitive resistor decreases, causing the current in the circuit to increase, and the voltage between the source and the drain of the transistor n-FET increases. Since the source of the transistor n-FET is connected to the gate through a fixed resistor, an increase in current causes a decrease in the gate voltage, resulting in a decrease in current in the n-type field effect transistor.
  • the decrease of the current of the series circuit leads to a decrease in the partial pressure on the gas sensitive resistor, and the partial pressure of the transistor n-FET and the fixed resistor is increased, that is, self-feedback.
  • the output voltage across the transistor and the fixed resistor at steady state is twice as high as the output voltage of the fixed resistor divider circuit in the related art.
  • the gas sensor in the embodiment detects formaldehyde
  • the voltage across the transistor n-FET and the fixed resistor is reduced, and the voltage across the transistor n-FET and the fixed resistor can be taken as the output voltage Vout.
  • the field effect transistor in the above embodiment is of an enhanced or depleted type.
  • the gas sensor is a sensor that operates at room temperature or is operated at a certain temperature after being heated by a heating circuit.
  • the room temperature may be 20 ° C ⁇ 25 ° C
  • the certain temperature may be 200 ° C ⁇ 400 ° C.
  • the present disclosure also provides a gas sensor alarm circuit including an alarm display circuit and the above self-feedback circuit; wherein the alarm display circuit includes at least one of a buzzer, a light emitting diode LED, and a relay, an operational amplifier, and a triode, a voltage output of the self-feedback circuit is coupled to the operational amplifier and the triode, driving at least one of the buzzer, the LED, and the relay to perform an alarm; or the alarm display circuit includes a voltage reader The voltage output is coupled to the voltage reader, the voltage output is used as an alarm voltage, and the voltage reader is configured to digitally output the alarm voltage. Based on the above embodiment, as shown in FIG.
  • the operational amplifier U1A, the operational amplifier U1B, and the transistor TR1 drive the light-emitting diodes LED1, LED2, and the buzzer BU.
  • the operational amplifier U1A, the operational amplifier U1B, and the transistor TR1 drive the light-emitting diodes LED1, LED2, and the relay Re.
  • Vout is connected to a voltage reader, which digitizes Vout.
  • the gas sensor alarm circuit provided by the present disclosure improves the alarm voltage at the steady state, the sensitivity of the alarm circuit, and the alarm capability of the circuit.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Immunology (AREA)
  • Business, Economics & Management (AREA)
  • Environmental & Geological Engineering (AREA)
  • Emergency Management (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Food Science & Technology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Emergency Alarm Devices (AREA)

Abstract

一种自反馈电路，包括气敏传感器和分压电路，其中，分压电路包括场效应晶体管（p-FET，n-FET），气敏传感器的气敏电阻（n-Rsensor）与场效应晶体管（p-FET，n-FET）的源极（S）和漏极（D）串联，取气敏电阻（n-Rsensor）的分压与分压电路的分压之中的分压增大者作为自反馈电路的电压输出（V OUT）。

Description

气敏传感器报警电路 技术领域
一种气敏传感器报警电路，属于气敏传感器、报警器等电子领域。
背景技术
半导体气敏传感器在易燃易爆气体、有毒有害气体、空气污染气体、食品卫生相关气体检测报警中具有重要应用。半导体气敏传感器的工作原理为在一定的温度下，半导体材料的电阻随待测气体的浓度发生变化。如图1所示，VDD为测试电压，VOUT为输出电压信号，RL为负载电阻，n-RSENSOR为n型氧化物半导体气敏电阻，气敏传感器电阻n-RSENSOR的变化将引起电路中电流的变化，通过与负载电阻RL串联，最终导致负载电阻RL或者气敏传感器n-RSENSOR上分压的变化。此分压的变化即可驱动外电路报警或通过数模转换显示出待测气体的浓度信息。相关技术中，商业化的报警器(例如郑州炜盛产品MP503，及日本费加罗产品TGS2602)及大多数的科研论文及专利(例如CN103729970A，CN204129920U)中均采用此简单易行的串联电路。此外，除固定阻值的负载电阻外，部分产品也用到了可人为调节电阻的变阻器(例如专利CN103558260B)，以便于灵活调整电路参数。
此外，部分学术论文或者著作中，负载电阻也可以被取代为一种气敏传感器，如图2所示，VDD为测试电压，VOUT为输出电压信号，p-RSENSOR为p型氧化物半导体气敏电阻，n-RSENSOR为n型氧化物半导体气敏电阻，通过两个气敏传感器n-RSENSOR、p-RSENSOR的特征参数匹配，提高对检测气体的灵敏度及专一响应等(Han等，Sensors and Actuators B：Chemical，2009，138：228；吴兴惠，王彩君，传感器与信号处理，电子工业出版社，1997年)。
发明内容
本公开提供的气敏传感器报警电路，能够提高气敏传感器报警电路的智能水平，通过场效应晶体管的自反馈作用提高电路的报警能力。其中场效应晶体管的自反馈作用是本公开与相关技术中的报警电路的区别所在。
本公开提供了一种自反馈电路，包括气敏传感器和分压电路，其中分压电 路包括场效应晶体管，场效应晶体管的源极和漏极串联；气敏电阻的分压与分压电路的分压之中的分压增大者作为自反馈电路的电压输出。
可选的，场效应晶体管的栅极与其源极或者漏极短接；气敏电阻的分压与场效应晶体管的分压之中的分压增大者作为电压输出。可选的，采用p沟道的场效应晶体管时，其栅极与漏极短接；采用n沟道的场效应晶体管时，其栅极与源极短接。可选的，采用n型半导体气敏传感器测试还原性气体以及采用p型半导体气敏传感器测试氧化性气体时，取场效应晶体管的分压作为电压输出；采用n型半导体气敏传感器测试氧化性气体以及采用p型半导体气敏传感器测试还原性气体时，取气敏传感器的分压作为电压输出。
可选的，所述场效应晶体管为增强型或者耗尽型。
可选的，所述气敏传感器是室温工作的传感器，或者是通过加热回路加热后工作于一定温度下的气敏传感器。
可选的，所述分压电路包括场效应晶体管和串联电阻，气敏传感器的气敏电阻和场效应晶体管的源极和漏极经过串联电阻串联；场效应晶体管的源极或者漏极经过串联电阻与场效应晶体管的栅极连接；气敏电阻的分压，和场效应晶体管与串联电阻共同分压之中的分压增大者作为电压输出。
可选的，采用p沟道的场效应晶体管时，其漏极经过串联电阻与栅极连接；采用n沟道的场效应晶体管时，其源极经过串联电阻与栅极连接。
可选的，采用n型半导体气敏传感器测试还原性气体及采用p型半导体气敏传感器测试氧化性气体时，取场效应晶体管与串联电阻共同的分压作为报警电压输出；采用n型半导体气敏传感器测试氧化性气体及采用p型半导体气敏传感器测试还原性气体时，取气敏传感器的分压作为报警电压输出。
可选的，所述场效应晶体管为增强型或者耗尽型。
可选的，所述气敏传感器是室温工作的传感器，或者是通过加热回路加热后工作于一定温度下的气敏传感器。
可选的，场效应晶体管的栅极与其源极或者漏极短接；气敏电阻的分压与场效应晶体管的分压之中的分压减小者作为电压输出。
可选的，所述分压电路包括场效应晶体管和串联电阻，气敏传感器的气敏 电阻和场效应晶体管的源极和漏极经过串联电阻串联；场效应晶体管的源极或者漏极经过串联电阻与场效应晶体管的栅极连接；气敏电阻的分压，和场效应晶体管与串联电阻共同分压之中的减小增大者作为电压输出。
可选的，采用p沟道的场效应晶体管时，其栅极与漏极短接；采用n沟道的场效应晶体管时，其栅极与源极短接。
可选的，采用n型半导体气敏传感器测试还原性气体及采用p型半导体气敏传感器测试氧化性气体时，取气敏传感器的分压作为电压输出；采用n型半导体气敏传感器测试氧化性气体及采用p型半导体气敏传感器测试还原性气体时，取场效应晶体管的分压作为电压输出。
可选的，采用p沟道的场效应晶体管时，其栅极与漏极短接；采用n沟道的场效应晶体管时，其栅极与源极短接。
可选的，采用n型半导体气敏传感器测试还原性气体及采用p型半导体气敏传感器测试氧化性气体时，取气敏传感器的分压作为电压输出；采用n型半导体气敏传感器测试氧化性气体及采用p型半导体气敏传感器测试还原性气体时，取场效应晶体管的分压作为电压输出。
本公开还提供一种气敏传感器报警电路，包括上述的自反馈电路和报警显示电路；其中，所述报警显示电路包括蜂鸣器、发光二极管LED以及继电器中的至少一个、运算放大器和三极管，所述自反馈电路的电压输出连接所述运算放大器和所述三极管，驱动所述蜂鸣器、所述LED以及所述继电器中的至少一个进行报警；或者所述报警显示电路包括电压读出器，所述电压输出连接所述电压读出器，将所述电压输出作为报警电压，所述电压读出器设置为将所述报警电压数字化输出。
按上述方法连接的气敏传感器报警电路的工作原理为：气敏传感器在检测待测气体时，气敏传感器的气敏电阻的阻值会发生变化。在直流测试电压一定的情况下，电阻的变化引起电路中电流发生变化，致使串联器件的分压发生变化。由于场效应晶体管的栅极与源极或者漏极短接，或者场效应晶体管的栅极与源极或者漏极通过串联电阻连接，场效应晶体管的分压的变化将引起栅极电 压的变化。栅极电压对电路电流的变化起自反馈作用，增强了由于气敏传感器电阻变化引起的分压变化。经过不断的自反馈调节，稳态时的报警电压比相关技术中使用固定电阻的负载电压电路的输出电压高，因此提高了电路的报警能力。
附图说明
为了清楚说明以下实施例，以下使用附图1-13进行详细介绍。
图1为相关技术中使用的固定电阻的n型气敏传感器测量还原性气体的自反馈电路；
图2为相关技术中使用的p型气敏传感器和n型气敏传感器测量还原性气体的自反馈电路；
图3为实施例1中采用n型气敏传感器与p型场效应晶体管串联测试还原性气体的自反馈电路；
图4为实施例2中采用p型气敏传感器与p型场效应晶体管串联测试还原性气体的自反馈电路；
图5为实施例3中采用p型气敏传感器与n型场效应晶体管串联测试还原性气体的自反馈电路；
图6为实施例4中采用n型气敏传感器与n型场效应晶体管串联测试还原性气体的自反馈电路；
图7为实施例5中采用p型气敏传感器与p型场效应晶体管串联测试氧化性气体的自反馈电路；
图8为实施例6中采用n型气敏传感器与p型场效应晶体管串联测试氧化性气体的自反馈电路；
图9为实施例7中采用p型气敏传感器与n型场效应晶体管串联测试氧化性气体的自反馈电路；
图10为实施例8中采用n型气敏传感器与n型场效应晶体管串联测试氧化性气体的自反馈电路；
图11为一实施例提供的气敏传感器报警电路一；
图12为一实施例提供的气敏传感器报警电路二；以及
图13为一实施例提供的气敏传感器报警电路三。
具体实施方式
在不冲突的情况下，以下实施例以及实施例中的技术特征可以相互任意组合。
下面结合实例对本公开进行说明，为了使电路清晰，加热电路未画出，加热电路包括在传感器电阻中。
实施例1
如图3所示，VDD为测试电压，VOUT为输出电压信号，n-RSENSOR为n型氧化物半导体气敏电阻，p-FET为p型场效应晶体管，G、D、S分别为场效应晶体管的栅极、漏极及源极。n型氧化物半导体SnO2气敏传感器的气敏电阻n-RSENSOR与p型场效应晶体管p-FET串联，气敏电阻第一端接测试电压正极VDD，气敏电阻第二端连接晶体管p-FET的漏极D，晶体管p-FET的源极S接地，栅极G短接漏极D，取晶体管p-FET的漏极D与地两端电压为输出电压Vout。当气敏传感器检测到酒精时，气敏传感器的气敏电阻的阻值降低，导致电路中电流升高，晶体管p-FET漏极D与地之间的电压增大。由于晶体管p-FET的栅极G与漏极D短接，栅极电压与漏极电压同步增大，导致p型晶体管中电流减小。串联电路电流的减小导致气敏电阻上的分压降低，晶体管p-FET上的分压增大，即为自反馈作用。通过不断自反馈调整，最终稳态时晶体管p-FET两端的输出电压Vout比相关技术中的固定电阻的分压电路的输出电压高1.5倍。如图3所示，当本实施例中的气敏传感器检测到臭氧时，晶体管p-FET上的分压减小，可以取晶体管p-FET的漏极D与地两端电压作为输出电压Vout。
实施例2
如图4所示，VDD为测试电压，VOUT为输出电压信号，p-RSENSOR为p型氧化物半导体气敏电阻，p-FET为p型场效应晶体管，G、D、S分别为场效应晶体管的栅极、漏极及源极。p型氧化物半导体Cu2O气敏传感器的气敏电阻p-RSENSOR与p型场效应晶体管p-FET串联，晶体管p-FET的漏极D接测试电压正极VDD，晶体管p-FET的源极S与气敏电阻的第一端连接，气敏电阻的第二端接地，晶体管p-FET的栅极G短接漏极D，取气敏电阻两端电压为输出电压 Vout。当气敏传感器检测到氢气时，气敏传感器的气敏电阻的阻值升高，导致电路中电流降低，晶体管p-FET的源漏极间电压减小。由于晶体管p-FET的栅极G与漏极D短接，栅极电压随漏极电压同步减小，导致p型晶体管中电流增大。串联电路电流的增大导致气敏电阻的分压增大，即为自反馈作用。通过不断自反馈调整，最终稳态时气敏电阻两端的输出电压比相关技术中的固定电阻分压电路的输出电压高2倍。如图4所示，当本实施例中的气敏传感器检测到二氧化氮时，气敏电阻的分压减小，可以取气敏电阻两端电压作为输出电压Vout。
实施例3
如图5所示，VDD为测试电压，VOUT为输出电压信号，p-RSENSOR为p型石墨烯气敏电阻，n-FET为n型场效应晶体管，G、D、S分别为场效应晶体管的栅极、漏极及源极，R0为串联电阻。p型氧化物半导体LaFeO3气敏传感器的气敏电阻p-RSENSOR与n型场效应晶体管n-FET串联，晶体管n-FET漏极接测试电压正极VDD，气敏电阻一端接地，晶体管n-FET的源极S通过一固定串联电阻R0连接栅极G，取气敏电阻的分压为输出电压Vout。当气敏传感器检测到甲醛时，气敏传感器的气敏电阻的阻值升高，导致电路中电流降低，晶体管n-FET源漏极间电压降低。由于晶体管n-FET栅极与源极通过固定电阻短接，电流的减小导致栅极电压增大，致使n型场效应晶体管中电流增大。串联电路电流的增大导致气敏传感器上的分压增大，即为自反馈作用。通过不断自反馈调整，最终稳态时气敏电阻两端的输出电压比相关技术中的固定电阻分压电路的输出电压高1.5倍。如图5所示，当本实施例中的气敏传感器检测到臭氧时，气敏电阻的分压减小，可以取气敏电阻的分压为输出电压Vout。
实施例4
如图6所示，VDD为测试电压，VOUT为输出电压信号，n-RSENSOR为n型氧化物半导体气敏电阻，n-FET为n型场效应晶体管，G、D、S分别为场效应晶体管的栅极、漏极及源极，R0为串联电阻。n型氧化物半导体ZnO气敏传感器的气敏电阻与n型场效应晶体管n-FET串联，气敏电阻一端接测试电压正极VDD，晶体管n-FET的源极S通过一固定电阻R0与栅极连接，取晶体管n-FET与固定电阻两端的电压为输出电压Vout。当气敏传感器检测到甲烷时，气敏传感器的气敏电阻的阻值降低，导致电路中电流增大，晶体管源漏极间电压增大。由于晶体管的源极通过固定电阻与栅极连接，电流的增大导致栅极电压降低，致使n 型场效应晶体管中电流减小。串联电路电流的减小导致气敏电阻上的分压减小，晶体管n-FET与固定电阻的分压增大，即为自反馈作用。通过不断自反馈调整，最终稳态时晶体管与固定电阻两端的输出电压Vout比相关技术中的固定电阻分压电路的输出电压高2倍。如图6所示，当本实施例中的气敏传感器检测到二氧化氮时，晶体管n-FET与固定电阻两端的电压分压减小，可以取晶体管n-FET与固定电阻两端的电压为输出电压Vout。
实施例5
如图7所示，VDD为测试电压，VOUT为输出电压信号，p-RSENSOR为p型氧化物半导体气敏电阻，p-FET为p型场效应晶体管，G、D、S分别为场效应晶体管的栅极、漏极及源极。p型石墨烯气敏传感器的气敏电阻与p型场效应晶体管p-FET串联，气敏电阻一端接测试电压正极VDD，晶体管p-FET的源极S接地，栅极G短接漏极D，取晶体管p-FET两端电压为输出电压Vout。当气敏传感器检测到二氧化氮时，气敏传感器的气敏电阻的阻值降低，导致电路中电流升高，晶体管p-FET源漏极间电压增大。由于晶体管p-FET栅极与漏极短接，栅极电压与漏极电压同步增大，导致p型场效应晶体管中电流减小。串联电路电流的减小导致传感器上的分压降低，晶体管上的分压增大，即为自反馈作用。通过不断自反馈调整，最终稳态时晶体管两端的输出电压比相关技术中的固定电阻分压电路的输出电压高1.5倍。如图7所示，当本实施例中的气敏传感器检测到氢气时，晶体管p-FET两端电压减小，可以取晶体管p-FET两端电压为输出电压Vout。
实施例6
如图8所示，VDD为测试电压，VOUT为输出电压信号，p-RSENSOR为p型酞菁铜半导体气敏电阻，p-FET为p型场效应晶体管，G、D、S分别为场效应晶体管的栅极、漏极及源极。n型氧化物半导体TiO2气敏传感器的气敏电阻与p型场效应晶体管p-FET串联，气敏电阻第一端接地，晶体管p-FET的栅极G短接漏极D，漏极D接测试电压正极VDD，源极S与气敏电阻第二端连接，取气敏电阻两端电压为输出电压。当气敏传感器检测到臭氧时，气敏传感器的气敏电阻的阻值升高，导致电路中电流降低，晶体管源漏极间电压减小。由于晶体管栅极与漏极短接，栅极电压随漏极电压同步减小，导致p型晶体管中电流增大。串联电路电流的增大导致传感器上的分压增大，即为自反馈作用。通过不 断自反馈调整，最终稳态时气敏电阻两端的输出电压比相关技术中的固定电阻分压电路的输出电压高2倍。如图8所示，当本实施例中的气敏传感器检测到酒精时，气敏电阻的分压减小，可以取气敏电阻的分压为输出电压Vout。
实施例7
如图9所示，VDD为测试电压，VOUT为输出电压信号，n-RSENSOR为n型氧化物半导体气敏电阻，n-FET为n型场效应晶体管，G、D、S分别为场效应晶体管的栅极、漏极及源极，R0为串联电阻。n型氧化物半导体In2O3气敏传感器的气敏电阻与n型场效应晶体管n-FET串联，晶体管n-FET漏极D接测试电压正极VDD，气敏电阻一端接地，源极S通过一固定电阻R0与源极S连接，取气敏电阻的分压为输出电压Vout。当气敏传感器遇到二氧化氮时，气敏传感器的气敏电阻的阻值升高，导致电路中电流降低，晶体管源漏极间电压降低。由于晶体管源极通过固定电阻与栅极连接，电流的减小导致栅极电压增大，致使n型场效应晶体管中电流增大。串联电路电流的增大导致气敏电阻上的分压增大，即为自反馈作用。通过不断自反馈调整，最终稳态时气敏电阻两端的输出电压Vout比相关技术中的固定电阻分压电路的输出电压高1.5倍。如图3所示，当本实施例中的气敏传感器检测到甲烷时，气敏电阻的分压减小，可以取气敏电阻的分压作为输出电压Vout。
实施例8
如图10所示，VDD为测试电压，VOUT为输出电压信号，n-RSENSOR为n型氧化物半导体气敏电阻，n-FET为n型场效应晶体管，G、D、S分别为场效应晶体管的栅极、漏极及源极，R0为串联电阻。p型有机半导体酞菁铜气敏传感器的气敏电阻与n型场效应晶体管n-FET串联，气敏电阻的一端接测试电压正极VDD，晶体管n-FET的源极S通过一固定电阻R0连接栅极G，取晶体管n-FET与固定电阻两端电压为输出电压Vout。当气敏传感器检测到臭氧时，气敏电阻的阻值降低，导致电路中电流增大，晶体管n-FET源漏极间电压增大。由于晶体管n-FET源极通过固定电阻与栅极连接，电流的增大导致栅极电压降低，致使n型场效应晶体管中电流减小。串联电路电流的减小导致气敏电阻上的分压减小，晶体管n-FET与固定电阻的分压增大，即为自反馈作用。通过不断自反馈调整，最终稳态时晶体管与固定电阻两端的输出电压比相关技术中的固定电阻分压电路的输出电压高2倍。如图10所示，当本实施例中的气敏传感器检测到甲醛时， 晶体管n-FET与固定电阻两端电压减小，可以取晶体管n-FET与固定电阻两端的电压为输出电压Vout。
可选的，上述实施例中的场效应晶体管为增强型或者耗尽型。
可选的，气敏传感器是室温工作的传感器，或者通过加热回路加热后工作于一定温度下。其中，所述室温可以是20℃～25℃，所述一定温度可以是200℃～400℃。
本公开还提供一种气敏传感器报警电路，包括报警显示电路和上述的自反馈电路；其中，所述报警显示电路包括蜂鸣器、发光二极管LED以及继电器中的至少一个、运算放大器和三极管，所述自反馈电路的电压输出连接所述运算放大器和所述三极管，驱动所述蜂鸣器、所述LED以及所述继电器中的至少一个进行报警；或者所述报警显示电路包括电压读出器，所述电压输出连接所述电压读出器，将所述电压输出作为报警电压，所述电压读出器设置为将所述报警电压数字化输出。在上述实施例的基础上，如图11所示，运算放大器U1A、运算放大器U1B和三极管TR1，驱动发光二极管LED1、LED2，以及蜂鸣器BU。如图12所示，运算放大器U1A、运算放大器U1B和三极管TR1，驱动发光二极管LED1、LED2，以及继电器Re。如图13所示，Vout连接电压读出器，将Vout数字化输出。
工业实用性
本公开提供的气敏传感器报警电路，提高了稳态时的报警电压、报警电路的灵敏度以及电路的报警能力。

Claims (18)

  1. 一种自反馈电路，包括气敏传感器和分压电路，其中，分压电路包括场效应晶体管，气敏传感器的气敏电阻与场效应晶体管的源极和漏极串联；气敏电阻的分压或分压电路的分压作为所述自反馈电路的电压输出。
  2. 如权利要求1所述的电路，其中，场效应晶体管的栅极与其源极或者漏极短接；气敏电阻的分压与场效应晶体管的分压之中的分压增大者作为电压输出。
  3. 如权利要求1所述的电路，其中，所述分压电路包括场效应晶体管和串联电阻，气敏传感器的气敏电阻和场效应晶体管的源极和漏极经过串联电阻串联；场效应晶体管的源极或者漏极经过串联电阻与场效应晶体管的栅极连接；气敏电阻的分压，和场效应晶体管与串联电阻共同分压之中的分压增大者作为电压输出。
  4. 如权利要求2所述的电路，其中，采用p沟道的场效应晶体管时，其栅极与漏极短接；采用n沟道的场效应晶体管时，其栅极与源极短接。
  5. 如权利要求2所述的电路，其中，采用n型半导体气敏传感器测试还原性气体及采用p型半导体气敏传感器测试氧化性气体时，取场效应晶体管的分压作为电压输出；采用n型半导体气敏传感器测试氧化性气体及采用p型半导体气敏传感器测试还原性气体时，取气敏传感器的分压作为电压输出。
  6. 如权利要求2或4所述的电路，其中，所述场效应晶体管为增强型或者耗尽型。
  7. 如权利要求2或5所述的电路，其中，所述气敏传感器是室温工作的传感器，或者是通过加热回路加热后工作于一定温度下的气敏传感器。
  8. 如权利要求3所述的电路，其中，采用p沟道的场效应晶体管时，其漏极经过串联电阻与栅极连接；采用n沟道的场效应晶体管时，其源极经过串联电阻与栅极连接。
  9. 如权利要求3所述的电路，其中，采用n型半导体气敏传感器测试还原性气体及采用p型半导体气敏传感器测试氧化性气体时，取场效应晶体管与串联电阻共同的分压作为电压输出；采用n型半导体气敏传感器测试氧化性气体及采用p型半导体气敏传感器测试还原性气体时，取气敏传感器的分压作为电压输出。
  10. 如权利要求3或8所述的电路，其中，所述场效应晶体管为增强型或者耗尽型。
  11. 如权利要求3或9所述的电路，其中，所述气敏传感器是室温工作的传感器，或者是通过加热回路加热后工作于一定温度下的气敏传感器。
  12. 如权利要求1所述的电路，其中，场效应晶体管的栅极与其源极或者漏极短接；气敏电阻的分压与场效应晶体管的分压之中的分压减小者作为电压输出。
  13. 如权利要求1所述的电路，其中，所述分压电路包括场效应晶体管和串联电阻，气敏传感器的气敏电阻和场效应晶体管的源极和漏极经过串联电阻串联；场效应晶体管的源极或者漏极经过串联电阻与场效应晶体管的栅极连接；气敏电阻的分压，和场效应晶体管与串联电阻共同分压之中的减小增大者作为电压输出。
  14. 如权利要求12所述的电路，其中，采用p沟道的场效应晶体管时，其栅极与漏极短接；采用n沟道的场效应晶体管时，其栅极与源极短接。
  15. 如权利要求12所述的电路，其中，采用n型半导体气敏传感器测试还原性气体及采用p型半导体气敏传感器测试氧化性气体时，取气敏传感器的分压作为电压输出；采用n型半导体气敏传感器测试氧化性气体及采用p型半导体气敏传感器测试还原性气体时，取场效应晶体管的分压作为电压输出。
  16. 如权利要求13所述的电路，其中，采用p沟道的场效应晶体管时，其栅极与漏极短接；采用n沟道的场效应晶体管时，其栅极与源极短接。
  17. 如权利要求13所述的电路，其中，采用n型半导体气敏传感器测试还原性气体及采用p型半导体气敏传感器测试氧化性气体时，取气敏传感器的分压作为电压输出；采用n型半导体气敏传感器测试氧化性气体及采用p型半导体气敏传感器测试还原性气体时，取场效应晶体管的分压作为电压输出。
  18. 一种气敏传感器报警电路，包括报警显示电路和如权利要求1-17任一项所述的自反馈电路；其中，
    所述报警显示电路包括蜂鸣器、发光二极管LED以及继电器中的至少一个、运算放大器和三极管，所述自反馈电路的电压输出连接所述运算放大器和所述三极管，驱动所述蜂鸣器、所述LED以及所述继电器中的至少一个进行报警；或者
    所述报警显示电路包括电压读出器，所述电压输出连接所述电压读出器，将所述电压输出作为报警电压，所述电压读出器设置为将所述报警电压数字化输出。
PCT/CN2017/080805 2016-04-15 2017-04-17 气敏传感器报警电路 WO2017177983A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP17781959.6A EP3444597A4 (en) 2016-04-15 2017-04-17 ALARM CONTROL OF A GAS SENSITIVE SENSOR
JP2018515863A JP6711905B2 (ja) 2016-04-15 2017-04-17 ガスセンサ警報回路

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610237530.7 2016-04-15
CN201610237530.7A CN105758898B (zh) 2016-04-15 2016-04-15 一种高灵敏自反馈型气敏传感器报警电路

Publications (1)

Publication Number Publication Date
WO2017177983A1 true WO2017177983A1 (zh) 2017-10-19

Family

ID=56335181

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/080805 WO2017177983A1 (zh) 2016-04-15 2017-04-17 气敏传感器报警电路

Country Status (4)

Country Link
EP (1) EP3444597A4 (zh)
JP (1) JP6711905B2 (zh)
CN (1) CN105758898B (zh)
WO (1) WO2017177983A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4339577A1 (en) * 2022-09-14 2024-03-20 Sndway Technology (Guangdong) Co., Ltd. Gas detector

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105758898B (zh) * 2016-04-15 2019-02-26 中国科学院过程工程研究所 一种高灵敏自反馈型气敏传感器报警电路
CN108267487B (zh) * 2017-12-08 2020-04-07 西安电子科技大学 一种硫化氢的检测装置及方法
CN110596202A (zh) * 2018-06-13 2019-12-20 香港科技大学 气敏型场效应晶体管装置和气敏型场效应晶体管装置阵列
CN110514698B (zh) * 2019-09-27 2022-09-30 福州京东方光电科技有限公司 一种气体感测装置和气体检测设备
CN111044573B (zh) * 2019-11-28 2022-04-08 浙江大华技术股份有限公司 气体传感器的故障检测电路及方法
CN112820089B (zh) * 2021-01-28 2022-05-03 武汉拓宝科技股份有限公司 一种批量感烟报警器自动检测方法及系统
CN117110403B (zh) * 2023-08-03 2024-01-30 天津大学 气敏场效应管漏栅电压激励与源-漏电流采集系统与方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761639A (en) * 1985-12-20 1988-08-02 The Standard Oil Company Lightweight, compact detector of sudden changes in concentration of a gas
CN201312401Y (zh) * 2008-11-10 2009-09-16 广州南科集成电子有限公司 一种过流过压保护恒流源电路
CN201992539U (zh) * 2011-03-04 2011-09-28 天津超音科技有限公司 智能瓦斯报警矿灯
CN102421224A (zh) * 2011-09-05 2012-04-18 电子科技大学 一种led驱动用自反馈线性恒流器
CN102437159A (zh) * 2011-11-22 2012-05-02 深圳市芯威科技有限公司 三端自反馈线性恒流器及其制备方法
CN103729970A (zh) * 2012-10-13 2014-04-16 成都进界科技有限公司 低功耗煤气泄漏报警器
CN204129920U (zh) * 2014-11-10 2015-01-28 周芸 可燃气体泄漏声光告警器
CN105758898A (zh) * 2016-04-15 2016-07-13 中国科学院过程工程研究所 一种高灵敏自反馈型气敏传感器报警电路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248729A (en) * 1975-10-16 1977-04-19 Nissan Motor Co Ltd Air-fuel ratio controller
JPS56137146A (en) * 1980-03-28 1981-10-26 Nissan Motor Co Ltd Controller for air-to-fuel ratio
JPS57182153A (en) * 1981-05-02 1982-11-09 Toshiba Corp Gas detector
JPS5995420A (ja) * 1982-11-24 1984-06-01 Hitachi Ltd Ｍｏｓ型センサ
CN2118985U (zh) * 1991-12-09 1992-10-14 张亚军 剧毒气体泄露监控仪
EP0565807A1 (en) * 1992-04-17 1993-10-20 STMicroelectronics S.r.l. MOS power transistor device
JPH09257736A (ja) * 1996-03-25 1997-10-03 Tokai Univ ガスセンサおよびガス検出装置
JP3315946B2 (ja) * 1999-06-30 2002-08-19 矢崎総業株式会社 ガス火災警報器
CN101464448A (zh) * 2007-12-21 2009-06-24 深圳富泰宏精密工业有限公司 多功能便携式电子装置
IT1402406B1 (it) * 2010-10-22 2013-09-04 St Microelectronics Srl Metodo di fabbricazione di un dispositivo sensore di una sostanza gassosa di interesse.
JP5861834B2 (ja) * 2012-05-30 2016-02-16 新コスモス電機株式会社 ガス検知素子用通電制御装置
CN103558260B (zh) * 2013-11-18 2016-01-06 武汉理工大学 提高半导体电阻式气敏元件动态检测灵敏度的方法及系统
CN204697045U (zh) * 2015-04-20 2015-10-07 郑州炜盛电子科技有限公司 气敏传感器的数据读出电路和检测装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761639A (en) * 1985-12-20 1988-08-02 The Standard Oil Company Lightweight, compact detector of sudden changes in concentration of a gas
CN201312401Y (zh) * 2008-11-10 2009-09-16 广州南科集成电子有限公司 一种过流过压保护恒流源电路
CN201992539U (zh) * 2011-03-04 2011-09-28 天津超音科技有限公司 智能瓦斯报警矿灯
CN102421224A (zh) * 2011-09-05 2012-04-18 电子科技大学 一种led驱动用自反馈线性恒流器
CN102437159A (zh) * 2011-11-22 2012-05-02 深圳市芯威科技有限公司 三端自反馈线性恒流器及其制备方法
CN103729970A (zh) * 2012-10-13 2014-04-16 成都进界科技有限公司 低功耗煤气泄漏报警器
CN204129920U (zh) * 2014-11-10 2015-01-28 周芸 可燃气体泄漏声光告警器
CN105758898A (zh) * 2016-04-15 2016-07-13 中国科学院过程工程研究所 一种高灵敏自反馈型气敏传感器报警电路

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3444597A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4339577A1 (en) * 2022-09-14 2024-03-20 Sndway Technology (Guangdong) Co., Ltd. Gas detector

Also Published As

Publication number Publication date
CN105758898B (zh) 2019-02-26
CN105758898A (zh) 2016-07-13
JP2018529959A (ja) 2018-10-11
EP3444597A4 (en) 2020-01-01
JP6711905B2 (ja) 2020-06-17
EP3444597A1 (en) 2019-02-20

Similar Documents

Publication Publication Date Title
WO2017177983A1 (zh) 气敏传感器报警电路
US4443791A (en) Self-compensating gas detection apparatus
US20060199271A1 (en) Temperature feedback control for solid state gas sensors
US4761639A (en) Lightweight, compact detector of sudden changes in concentration of a gas
US11674918B2 (en) Monolithic gas-sensing chip assembly and method
Nayyar et al. A comprehensive review of semiconductor-type gas sensors for environmental monitoring
Dhanekar Smart and intelligent E‐nose for sensitive and selective chemical sensing applications
Illahi et al. Electronic Nose Technology and Application: A Review
US9816975B2 (en) Fluid state detection apparatus
Hijazi et al. Wide range resistance to current conversion circuit for resistive gas sensors applications
US11480555B2 (en) Sensing system and method
Shawkat et al. A differential ISFET pH sensor
CN103810819A (zh) 有害气体泄漏报警器
Gardner et al. Guest Editorial-Special issue on machine olfaction
KR20120085003A (ko) 대기에서의 환원성 가스를 모니터링 할 수 있는 반도체 센서 기반 장치
Chodavarapu et al. CMOS integrated luminescence oxygen multi-sensor system
Hijazi et al. Metal Oxide Gas Sensor Electronic Interfaces
Nakagawa et al. A new ozone sensor for an ozone generator
US11867676B2 (en) Multi-gas sensing system and method
Huang et al. Machine learning-driven gas identification in gas sensors
Hackner et al. Surface ionisation gas detection: Vertical versus planar readout modes
de Lacy Costello et al. The use of a minimal number of vapour sensors for the assessment of food quality
US20230098591A1 (en) Interface circuit and differential interface circuit with integrated complementary sensors
Smulko et al. Fluctuation-enhanced gas sensing in practice
US20240133837A1 (en) Multi-frequency sensing system and method

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2018515863

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17781959

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2017781959

Country of ref document: EP

Effective date: 20181115