WO2017158819A1 - Procédé de traitement de microstructure et appareil de traitement de microstructure - Google Patents

Procédé de traitement de microstructure et appareil de traitement de microstructure Download PDF

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Publication number
WO2017158819A1
WO2017158819A1 PCT/JP2016/058686 JP2016058686W WO2017158819A1 WO 2017158819 A1 WO2017158819 A1 WO 2017158819A1 JP 2016058686 W JP2016058686 W JP 2016058686W WO 2017158819 A1 WO2017158819 A1 WO 2017158819A1
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WIPO (PCT)
Prior art keywords
processing
fine structure
processing region
position information
acceleration sensor
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PCT/JP2016/058686
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English (en)
Japanese (ja)
Inventor
杉井　信之
俊太郎 町田
哲史 河村
渡邊　一希
敬司 渡邉
龍崎　大介
Original Assignee
株式会社日立製作所
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Priority to PCT/JP2016/058686 priority Critical patent/WO2017158819A1/fr
Publication of WO2017158819A1 publication Critical patent/WO2017158819A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate

Definitions

  • the present invention relates to a fine structure processing method and a fine structure processing apparatus.
  • Patent Document 1 JP-A-2004-209626.
  • This publication describes a method for producing a three-dimensional microstructure. In this manufacturing method, under the control of processing conditions, a preliminary structure is created by performing temporary processing based on the design three-dimensional shape data of the three-dimensional structure, and the shape of the prototype structure is compared with the design shape. The main processing is performed while correcting the processing conditions so as to correct the difference.
  • a processing technique using a FIB (Focused Ion Beam) apparatus is promising.
  • additional processing may be required for the microstructure manufactured using the FIB apparatus.
  • the members when performing the above additional processing, the members may be bonded to each other.
  • the strength of the fixed portion is insufficient, there is also a problem that when a disturbance such as vibration is applied, the bonded portion is peeled off and the fine structure is destroyed.
  • a fine structure processing method includes a step of preparing a first member and first position information of a position recognition mark formed on the main surface of the first member from a database. And a step of extracting the second position information of the processing region of the first member from the database. Furthermore, a step of detecting the relative position of the processing region of the first member with the position recognition mark as the origin from the first position information and the second position information, and the processing region of the first member with the position recognition mark as the origin And processing the processing region of the first member based on the relative position information.
  • the microstructure processing apparatus includes a sample stage that holds a first member, an irradiation optical system that irradiates an ion beam to the first member on the sample stage, and a main surface of the first member.
  • a database for storing first position information of the formed position recognition mark and second position information of the processing region of the first member. Then, from the first position information and the second position information extracted from the database, the relative position of the processing region of the first member with the position recognition mark as the origin is detected, and processing of the first member is performed based on the relative position information. Process the area.
  • the manufacturing throughput of the fine structure can be improved.
  • FIG. 4 is a correlation diagram of structure / physical property parameters and device characteristics in a design structure of an acceleration sensor according to an embodiment. It is a top view of the semiconductor wafer which manufactures the acceleration sensor by an Example. It is a top view which shows an example of the acceleration sensor by an Example. It is a top view which shows the other example of the acceleration sensor by an Example. It is a figure which shows an example of the data structure stored in the database by an Example. It is a top view which shows an example of the acceleration sensor after the additional process by an Example. It is a top view which shows the other example of the acceleration sensor after the additional process by an Example. It is the schematic which shows the manufacturing apparatus of MEMS by an Example.
  • the constituent elements are not necessarily indispensable unless otherwise specified or apparently indispensable in principle.
  • the shapes when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numbers and the like (including the number, numerical value, quantity, range, etc.).
  • each part does not correspond to the actual device, and a specific part may be displayed relatively large for easy understanding of the drawing. Even when the cross-sectional view and the plan view correspond to each other, a specific part may be displayed relatively large in order to make the drawing easy to understand.
  • MEMS is exemplified as the fine structure.
  • an acceleration sensor is illustrated as MEMS, it is not limited to this, A gyroscope, a microphone, a pressure sensor, etc. may be sufficient.
  • a method for manufacturing the acceleration sensor according to the present embodiment will be described with reference to FIGS.
  • the present embodiment is implemented by an FIB apparatus and an information processing apparatus that controls the FIB apparatus.
  • FIG. 1 is a flowchart for explaining a MEMS manufacturing method according to this embodiment.
  • FIG. 2 is a correlation diagram between device parameters and structural parameters / physical parameters (hereinafter referred to as “structural / physical parameters”) in the design structure of the acceleration sensor according to the present embodiment.
  • FIG. 3 is a plan view of a semiconductor wafer for manufacturing the acceleration sensor according to this embodiment.
  • 4 and 5 are plan views showing an example of an acceleration sensor according to this embodiment and another example, respectively.
  • FIG. 6 is a diagram illustrating an example of a data structure stored in the database according to the present embodiment.
  • 7 and 8 are plan views showing an example and another example of the acceleration sensor after additional machining according to the present embodiment, respectively.
  • FIG. 9 is a schematic view showing a MEMS manufacturing apparatus according to this embodiment.
  • the information processing apparatus prepares a correlation diagram CC1 between the structure / physical property parameters and the device characteristics in the design structure of the acceleration sensor shown in FIG.
  • the information processing device selects the spring constant K of the support beam of the acceleration sensor and the mass M of the movable part as the device characteristics of the desired acceleration sensor, for example, when structural / physical parameters for obtaining the natural frequency are required. Then, the natural frequency CF is calculated from the spring constant K of the support beam and the mass M of the movable part, and a correlation diagram CC1 shown in FIG. 2 is created.
  • a plurality of black circles shown in FIG. 2 indicate the natural frequency CF obtained in advance from the spring constant K of the support beam and the mass M of the movable part.
  • the spring constant K of the support beam and the mass M of the movable part are selected as the structural / physical property parameters.
  • the present invention is not limited to this.
  • the dimensions (thickness or width) of the constituent members of the acceleration sensor ), Density, hardness, material constant or Young's modulus can also be selected.
  • the number of parameters is not limited to two, and may be three or more.
  • the information processing apparatus selects the natural frequency CFp of the design specification in the vicinity of the natural frequency CFm of the required specification from the correlation diagram CC1 shown in FIG.
  • the natural frequency CFp of the design specification to be selected may be singular or plural, but here, the natural frequency CFp of one design specification in the vicinity of the natural frequency CFm of the required specification is selected. The case is illustrated.
  • the information processing apparatus determines the spring constant Kp of the support beam and the mass Mp of the movable part from which the natural frequency CFp is obtained from the natural frequency CFp of the selected design specification.
  • the information processing apparatus has an inherent design specification that approximates the acceleration sensor SSm having a structure (hereinafter referred to as a “desired structure”) having the required natural frequency CFm.
  • the acceleration sensor SSp0 having a structure having the frequency CFp (hereinafter referred to as “starting structure”) can be selected.
  • Step 1 Preparation of semiconductor wafer> First, the semiconductor wafer SW shown in FIG. 3 is prepared.
  • the semiconductor wafer SW is formed with a plurality of semiconductor chips SC partitioned and formed in a matrix, and an acceleration sensor SS is formed in advance for each of them.
  • These acceleration sensors SS are not particularly limited, but may be formed by using an FIB device described later.
  • the mark M1 is formed on the semiconductor wafer SW in a region where the plurality of semiconductor chips SC are not formed.
  • the position information of each semiconductor chip SC is managed with reference to the mark M1.
  • [Row 1, Column 1] is selected as the position information of the semiconductor chip SC located closest to the mark M1, and this is used as the address origin.
  • the plurality of semiconductor chips SC formed on the semiconductor wafer SW are formed to correspond to the correlation diagram CC1 shown in FIG. That is, the acceleration sensors SS respectively formed on the plurality of semiconductor chips SC are different from each other in the spring constant K of the support beam and the mass M of the movable part.
  • the spring constant K of the support beam constituting the acceleration sensor SS is selected, and the acceleration sensor SS is arranged so that the spring constant K sequentially decreases from row 1 to row 6. Yes.
  • the mass M of the movable part constituting the acceleration sensor SS is selected as an element belonging to the column (second direction), and the acceleration sensor SS in which the mass M increases sequentially from the column 1 toward the column 5 is arranged. Yes.
  • a plurality of semiconductor chips SC having different spring constants K of the supporting beams and masses M of the movable parts are formed on the semiconductor wafer SW so as to completely correspond to the correlation diagram CC1 shown in FIG.
  • more semiconductor chips SC than the design specification shown in the correlation diagram CC1 may be formed.
  • semiconductor chips SC having the same structure and physical property parameters may be formed on the semiconductor wafer SW.
  • the acceleration sensor SS includes a fixed portion 2 that is supported and fixed to the support substrate 1 via an insulating layer, a support beam 3 that supports a movable portion 4 described later on the fixed portion 2 in a movable state, and the support beam 3. And a movable part 4 that is displaced following the acceleration when an acceleration is applied, and a detection part D1 that detects the amount of displacement of the movable part 4.
  • the movable electrode D1a and the fixed electrodes D1b and D1c are arranged in a parallel plate shape, and form capacitances C1 and C2, respectively.
  • the applied acceleration can be output as a voltage signal by differentially detecting the change in electrostatic capacity with the displacement of the movable part 4 using an electric circuit.
  • the natural frequency f 0 of the acceleration sensor SS is expressed by the following formula (1).
  • f 0 natural frequency of the acceleration sensor SS M: mass of the movable part 4 K: a spring constant of the support beam 3 on which the movable part 4 is suspended.
  • the desired natural frequency f 0 of the acceleration sensor SS can be obtained.
  • a mark M2 is formed on each semiconductor chip SC on which the acceleration sensor SS is formed, and the position information of the mark M2 is managed.
  • the mark M2 can be formed on the movable part 4 of the acceleration sensor SS, for example, as shown in FIG.
  • a plurality of marks M2 can be formed on each semiconductor chip SC on which the acceleration sensor SS is formed.
  • the plurality of marks M2 can be formed, for example, on the insulating layer formed on the main surface of the support substrate 1 and the movable part 4 of the acceleration sensor SS.
  • the support substrate 1 corresponds to the semiconductor wafer SW.
  • the marks M1 and M2 are formed by, for example, etching using a photolithography technique after the acceleration sensor SS is formed for each of a plurality of semiconductor chips on the semiconductor wafer SW. Further, it may be formed directly on the semiconductor chip SC or the acceleration sensor SS using an FIB apparatus.
  • Step 2 Extraction of starting structure acceleration sensor>
  • the semiconductor wafer SW is formed with a plurality of semiconductor chips SC partitioned and formed in a matrix, and the acceleration sensors SS respectively formed on the plurality of semiconductor chips SC are spring constants of the support beams. K and the mass M of the movable part are different.
  • the FIB apparatus based on the spring constant Kp of the support beam of the acceleration sensor SSp0 of the starting structure and the mass Mp of the movable part extracted in the “(2) Starting structure extraction (correlation diagram)” step, the FIB apparatus The semiconductor chip SCp on which the acceleration sensor SSp having the starting structure is formed is extracted from among the plurality of semiconductor chips SC formed on the semiconductor wafer SW.
  • the FIB apparatus directly processes (directly forms) the acceleration sensor SSp having the starting structure to form the acceleration sensor SSm having a desired structure. Specifically, the FIB apparatus, for example, cuts the support beam to reduce the spring constant Kp, or adds a member to the movable part to increase the mass Mp. Thereby, the acceleration sensor SSm having a desired structure can be formed.
  • the machining of the acceleration sensor SSp having the starting structure can be performed, for example, according to the following procedure.
  • An example of the processing procedure of the acceleration sensor SSp having the starting structure will be described with reference to FIGS. 6 and 7.
  • an FIB device As a device for processing the acceleration sensor SSp having a starting structure, for example, an FIB device described later is used.
  • Various data relating to the semiconductor wafer SW are stored in advance in the database 86 provided in the FIB apparatus.
  • the chip of the semiconductor chip SCp in which the acceleration sensor SSp of the starting structure is formed from the address of the acceleration sensor SSp0 of the starting structure extracted in the step “(2) Extraction of starting structure (correlation diagram)”.
  • the number 162 and the chip position (X, Y) 163 are acquired.
  • the mass addition region 166 ([X 1 , Y 1 ]-[X 2 , Y 2 ]) to the movable part and the cutting of the support beam with reference to the mark M2 attached to the acceleration sensor SSp having the starting structure.
  • Possible region 167 ([x 1 , y 1 ]-[x 2 , y 2 ], [x 3 , y 3 ]-[x 4 , y 4 ], [x 5 , y 5 ]-[x 6 , y 6 ], [X 7 , y 7 ]-[x 8 , y 8 ]).
  • the semiconductor wafer SW is moved based on the chip number and the chip position (X, Y) of the semiconductor chip SCp on which the acceleration sensor SSp having the starting structure is acquired from the database 86, and the acceleration sensor having the starting structure is moved. Place SSp in the processing position of the FIB device.
  • the position of the semiconductor chip SCp is easily extracted with reference to the mark M1 formed on the semiconductor wafer SW. Further, the processing position of the acceleration sensor SSp having the starting structure is easily extracted with reference to the mark M2 formed on the semiconductor chip SCp.
  • the FIB apparatus is capable of cutting the support beam in the cuttable region ([x 1 , y 1 ] ⁇ [x 2 , y 2 ], [x 3 , y 3 ] ⁇ [x 4 , y 4 ], [x 5 , y 5 ]-[x 6 , y 6 ], [x 7 , y 7 ]-[x 8 , y 8 ]), the support beam 3 of the acceleration sensor SSp of the starting structure is To cut.
  • the hatched area is a cut area.
  • the FIB apparatus places the member MW on the movable part 4 of the acceleration sensor SSp having the starting structure, based on the mass addable region ([X 1 , Y 1 ]-[X 2 , Y 2 ]) of the movable part. To do.
  • the cutting amount of the support beam 3 can be easily obtained from the difference between the spring constant Kp of the support beam 3 of the acceleration sensor SSp of the starting structure and the spring constant Km of the support beam 3 of the acceleration sensor SSm of the desired structure.
  • the mass of the member MW can be easily obtained from the difference between the mass Mp of the movable part 4 of the acceleration sensor SSp having the starting structure and the mass Mm of the movable part 4 of the acceleration sensor SSm having the desired structure.
  • the acceleration sensor SSm having a desired structure can be formed.
  • the processing of the acceleration sensor SSp having the starting structure described here is intended for the acceleration sensor SSp provided with one mark M2 on one semiconductor chip SCp.
  • the same processing can be performed in the acceleration sensor SSp in which a plurality of marks M2 are attached to one semiconductor chip SCp.
  • the acceleration sensor SSm having a desired structure can be formed with high accuracy.
  • Processing of the acceleration sensor SSp having a starting structure is performed using, for example, an FIB apparatus shown in FIG.
  • the FIB apparatus has a vacuum container 41, which includes an ion source 31 that emits ions, a condenser lens 32, a beam limiting aperture 33, an ion beam scanning deflector 34, an aperture rotation mechanism 37, and the like.
  • a configured ion beam irradiation system is arranged.
  • the ions emitted from the ion source 31 include, for example, gallium ions or xenon gas.
  • an electron beam irradiation system including an electron gun 7, an electron lens 9 for focusing an electron beam 8 emitted from the electron gun 7, an electron beam scanning deflector 10, and the like is disposed.
  • the sample 11, the secondary particle detector 12, the sample stage 13, the probe (manipulator) 15, and a source gas (deposition gas) at the time of film formation or a gas for promoting etching at the time of cutting are supplied to the vacuum container 41.
  • a gas source 17 to be introduced is disposed.
  • the sample 11 is, for example, a semiconductor wafer SW on which a plurality of acceleration sensors SS shown in FIG. 2 are formed.
  • a sample stage control device 14 As a device for controlling the FIB apparatus, a sample stage control device 14, a manipulator control device 16, a gas source control device 18, a secondary particle detector control device 19, an aperture rotation control mechanism 38, an ion source control device 81, and a lens control.
  • a device 82, a calculation processing device 85, a storage device for storing the database 86, and the like are arranged.
  • the sample stage 13 includes a linear movement mechanism in two orthogonal directions in the sample placement surface, a linear movement mechanism in a direction perpendicular to the sample placement surface, a sample placement surface rotation mechanism, and a tilt axis in the sample placement surface. These controls are performed by the sample stage controller 14 in response to commands from the calculation processor 85.
  • the calculation processing device 85 is a display for displaying information input means for inputting necessary information by the device user, an image generated based on the detection signal of the secondary particle detector 12, information input by the information input means, and the like. Etc.
  • the database 86 stores various data related to the sample 11 such as data of a plurality of acceleration sensors SS formed on the semiconductor wafer shown in FIG. 6, for example. Further, the database 86 stores various data such as a process flow and a process recipe when the acceleration sensor SSp having the starting structure is processed, and the acceleration sensor SSp having the desired structure is formed by processing the acceleration sensor SSp having the desired structure. In this case, necessary information is output from the database 86.
  • ions emitted from the ion source 31 are focused on the sample 11 by the condenser lens 32 and the objective lens.
  • the focusing condition is set by input to the calculation processing device 85.
  • the beam diameter irradiated on the sample 11 is determined by the image formation on the sample 11 using the ion source 31 as a light source and the aberration caused by the lens.
  • the aberration due to the lens increases as the aperture of the beam limiting aperture 33 increases, and the beam diameter increases.
  • the FIB apparatus irradiates the support beam with an ion beam and directly etches it, so that the support beam is desired. You may process to the dimension.
  • the FIB apparatus may directly form the member by irradiating the movable part with an ion beam and depositing a film on the movable part.
  • the FIB apparatus uses a probe (manipulator) 15 to prepare in advance a member cut out from the sample 11 or a member place.
  • the member may be selected, the selected member may be transferred to the movable part, and the member may be connected (adhered) on the movable part.
  • the acceleration sensor SSm having a desired structure is completed through the steps of “(1) Preparation of design structure” to “(4) Processing of starting structure”.
  • At least “(3) extraction of starting structure (semiconductor wafer)” to “(5) completion of desired structure” can be continuously performed as a series of processes in the same FIB apparatus. Specifically, a step of forming a plurality of acceleration sensors SS on the semiconductor wafer SW, a step of extracting the acceleration sensor SSp of the starting structure from the plurality of acceleration sensors SS formed on the semiconductor wafer SW based on the correlation diagram, and the starting structure The process of forming the acceleration sensor SSm having a desired structure by processing the acceleration sensor SSp is continuously performed in the same FIB apparatus.
  • the support beam is cut to reduce the spring constant Kp, and a member is added to the movable part to increase the mass Mp.
  • the support beam and the movable part can be cut, the member can be added to the support beam and the movable part, respectively, or the member can be added to the support beam to cut the movable part.
  • FIG. 10 is a diagram showing an example of a process flow in the case of processing the acceleration sensor having the starting structure according to the present embodiment.
  • FIG. 11 is a schematic diagram for explaining a first example of a member alignment method when processing the acceleration sensor having the starting structure according to this embodiment.
  • FIG. 12 is a schematic diagram for explaining a second example of the member alignment method when processing the acceleration sensor having the starting structure according to this embodiment.
  • Step S1 The chip number and chip position of the semiconductor chip SCp on which the acceleration sensor SSp having the starting structure is formed are extracted from the database 86 provided in the FIB apparatus.
  • the sample stage mounted on the FIB apparatus moves and the semiconductor chip SCp moves to a predetermined processing position based on the chip number and the chip position of the semiconductor chip SCp. Placed.
  • Step S2 The position information of the mark M2, which is a position recognition mark attached to the acceleration sensor SSp of the starting structure, is extracted from the database 86.
  • the mark M2 attached to the acceleration sensor SSp of the starting structure is detected.
  • the mark M2 is formed on the acceleration sensor SSp having the starting structure, but may be formed on an insulating layer formed on the main surface of the semiconductor wafer.
  • Step S3 The position information of the mass addable region ([X 1 , Y 1 ]-[X 2 , Y 2 ]) of the member MW is extracted from the database 86. Then, from the position information of the mark M2 and the position information of the mass MW addable area ([X 1 , Y 1 ]-[X 2 , Y 2 ]), the mass addable area of the member MW with the mark M2 as the origin The relative position is detected, and the processing site is specified.
  • Step S4 From the structure library (also referred to as a member library) stored in the database 86, the address (structure address) of the member MW in the member storage where a plurality of members are prepared in advance is extracted and acquired. Is done.
  • structure library also referred to as a member library
  • Step S5 The member MW is cut out from the member storage area.
  • the cut member MW can be held by the manipulator 15 (see FIG. 9).
  • a rectangular parallelepiped is illustrated as the shape of the member MW.
  • Step S6 Based on the relative position information of the mass addable region of the member MW whose origin is the mark M2, the portion of the movable portion 4 of the acceleration sensor SSp having the starting structure to which the member MW is bonded (processed). Shapes and dimensions are measured and these data are stored in database 86.
  • Step S7 From the database 86, the processing position and processing conditions of the movable portion 4 of the acceleration sensor SSp of the starting structure determined from the shape and dimensions of the part to which the member MW is measured measured in [Step S6] are stored. Extracted. And according to the conditions, the site
  • Step S8 As shown in FIG. 11A, the member MW is placed on the movable portion 4 of the acceleration sensor SSp having the starting structure based on the relative position information of the mass-addable region of the member MW with the mark M2 as the origin. Is installed.
  • Step S9 The bonding conditions of the member MW and the like are extracted from the database 86. Then, according to the conditions, the FIB apparatus irradiates the fixed portion with the ion beam FB while spraying a gas raw material that becomes carbon, for example, by a reaction by irradiation with the ion beam.
  • the FIB device bonds the movable portion 4 and the member MW to each other by the carbon layer CA on the first side surface of the rectangular parallelepiped members MW having four side surfaces.
  • the sample stage 13 (see FIG. 9) is inclined so that the gas raw material that becomes carbon and the ion beam FB are irradiated to the first side surface side of the member MW by the reaction by the irradiation of the ion beam.
  • Step S10 The rotation condition and tilt condition of the sample stage 13 are extracted from the database 86. Then, according to the conditions, the FIB apparatus rotates the sample stage 13. In some cases, the FIB apparatus further tilts the sample stage 13 in addition to the rotation.
  • Step S11 Position information of the mark M2 attached to the acceleration sensor SSp of the starting structure when the sample stage 13 is rotated at a specified angle is extracted from the database 86.
  • the mark M2 attached to the acceleration sensor SSp of the starting structure is detected.
  • Step S12 Based on the relative position information of the mass-addable region of the member MW with the mark M2 as the origin when the sample stage 13 is rotated at a specified angle, the second side-side adhesive region ( The processing part) is specified.
  • the bonding conditions of the member MW and the like are extracted from the database 86. Then, according to the conditions, the FIB apparatus irradiates the fixed portion with the ion beam FB while spraying a gas raw material that becomes carbon, for example, by a reaction by irradiation with the ion beam.
  • the FIB apparatus has the movable portion 4. And the member MW are bonded by the carbon layer CA.
  • Step S13 The member MW is bonded to the movable portion 4 of the acceleration sensor SSp having the starting structure through the above-described steps.
  • ⁇ Second example> 10 and 12 a second example of a method for aligning the processing target region RA of the semiconductor chip SC and the member MW in the process of bonding the member MW (structure) onto the semiconductor chip SC (supporting member).
  • the semiconductor chip SC is composed of, for example, a silicon substrate and an insulating layer formed on the main surface of the silicon substrate, and a plurality of position recognition marks M3 are formed on the insulating layer.
  • Step S1 The position of the processing target portion RA of the semiconductor chip SC to which the member MW is bonded is extracted from the database 86 provided in the FIB apparatus.
  • the sample stage mounted on the FIB apparatus and mounting the semiconductor wafer moves, and the processing target region RA is placed at a predetermined processing position.
  • Step S2 The position information of the mark M3, which is a position recognition mark attached to the processing target region RA, is extracted from the database 86.
  • the mark M3 attached to the processing target region RA is detected.
  • the mark M3 is formed on an insulating layer formed on the main surface of the semiconductor wafer.
  • Step S3 The position information of the mass addable region ([X 1 , Y 1 ]-[X 2 , Y 2 ]) of the member MW is extracted from the database 86. Then, from the position information of the position of the mark M3 and the position information of the member MW where the mass can be added ([X 1 , Y 1 ]-[X 2 , Y 2 ]), the area of the member MW where the mark M3 is the origin can be added. The relative position is detected, and the processing site is specified.
  • Step S4 From the structure library stored in the database 86, the address (structure address) of the member MW in the member storage where a plurality of members are prepared in advance is extracted and acquired.
  • Step S5 The member MW is cut out from the member storage area.
  • the cut member MW can be held by the manipulator 15 (see FIG. 9).
  • a rectangular parallelepiped is illustrated as the shape of the member MW.
  • Step S6 Based on the relative position information of the mass-addable region of the member MW with the mark M3 as the origin, the shape and dimensions of the portion to be bonded (processed) to the member MW in the processing target portion RA are measured. These data are stored in the database 86.
  • Step S7 From the database 86, the processing position and processing conditions of the processing target portion RA determined from the shape and dimensions of the portion to which the member MW measured in [Step S6] is bonded are extracted. And according to the conditions, the site
  • the processing of the processing target part RA will be described later in ⁇ Member adhesion method> Will be described in detail.
  • Step S8 As shown in FIG. 12A, the member MW is placed on the processing target region RA based on the relative position information of the mass-addable region of the member MW with the mark M3 as the origin.
  • Step S9 The bonding conditions of the member MW and the like are extracted from the database 86. Then, according to the conditions, the FIB apparatus irradiates the fixed portion with the ion beam FB while spraying a gas raw material that becomes carbon, for example, by a reaction by irradiation with the ion beam.
  • FIB apparatus adhere
  • the sample stage 13 (see FIG. 9) is inclined so that the gas raw material that becomes carbon and the ion beam FB are irradiated to the first side surface side of the member MW by the reaction by the irradiation of the ion beam.
  • Step S10 The rotation condition and tilt condition of the sample stage 13 are extracted from the database 86. Then, according to the conditions, the FIB apparatus rotates the sample stage 13. In some cases, the FIB apparatus further tilts the sample stage 13 in addition to the rotation.
  • Step S11 The position information of the mark M3 attached to the processing target region RA when the sample stage 13 is rotated at a specified angle is extracted from the database 86.
  • the mark M3 attached to the processing target area RA is detected.
  • Step S12 Based on the relative position information of the mass-addable region of the member MW with the mark M3 as the origin when the sample stage 13 is rotated at a specified angle, the second side-side adhesive region ( The processing part) is specified.
  • the bonding conditions of the member MW and the like are extracted from the database 86. Then, according to the conditions, the FIB apparatus irradiates the fixed portion with the ion beam FB while spraying a gas raw material that becomes carbon, for example, by a reaction by irradiation with the ion beam.
  • FIB apparatus is a process object site
  • the RA and the member MW are bonded by the carbon layer CA.
  • Step S13 The member MW is bonded to the processing target region RA through the above-described steps.
  • attaches a structure on a supporting member was demonstrated here, the position alignment method by a present Example is not limited to this.
  • the member alignment method according to the present embodiment may be applied to, for example, a step of cutting the support member, a step of forming a structure by directly depositing a film on the support member, and the like.
  • [Step S1] to [Step S13] may change the order of the steps.
  • the shape and dimensions of the processed part [Step S6]) may be measured before the acquisition of the structure address ([Step S4]).
  • an adhesion method having a sufficient fixing strength that does not destroy the acceleration sensor even when subjected to disturbance such as vibration is used.
  • FIG. 13, FIG. 14 and FIG. 15 are cross-sectional views for explaining a method of adhering the support member and the structure according to this embodiment.
  • 16, FIG. 17, and FIG. 18 are schematic views for explaining a method of adhering the support member and the structure according to this embodiment.
  • FIG. 19 is a diagram illustrating an example of the software configuration of the FIB apparatus according to the present embodiment.
  • FIGS. 13A and 13B are cross-sectional views when a rectangular parallelepiped structure MW2 (for example, the member MW) is fixed to the upper surface of the support member MW1 (for example, the movable portion 4 of the acceleration sensor SSp having the starting structure), and It is sectional drawing in the case of fixing structure MW2 (for example, member MW) with a part lacking in the upper surface of support member MW1 (for example, movable part 4 of acceleration sensor SSp of a starting structure).
  • the FIB apparatus cuts out a desired structure MW2 from the member storage ([Step S5]).
  • the cut out structure MW2 can be held by the manipulator 15 (see FIG. 9).
  • the processing position and processing conditions of the support member MW1 determined from the shape and dimensions of the part to which the structure MW2 is bonded are extracted. And according to the conditions, groove part TR is formed in the part where structure MW2 of support member MW1 adheres ([process S7]). The processing of the support member MW1 is performed in order to obtain a sufficient fixing strength between the support member MW1 and the structure MW2.
  • the FIB apparatus irradiates the support member MW1 with an ion beam, and supports it based on the processing position and processing conditions of the support member MW1 extracted from the database 86.
  • a groove part TR having a predetermined depth is formed on the upper surface of the member MW1.
  • the groove TR is such that the dimension in the plan view of the groove part TR is larger than the dimension in the plan view of the structure MW2 bonded to the support member MW1, for example, the difference is greater than 0 ⁇ m and 1 ⁇ m or less. Is formed.
  • the FIB apparatus uses the manipulator 15 to transfer the cut out structure MW2 to the position where the groove TR of the support member MW1 is formed, and drops the structure MW2 into the groove TR ([Step S8]).
  • the bonding conditions and the like of the structure MW2 are extracted from the database 86.
  • the FIB apparatus irradiates the ion source and simultaneously irradiates a gas raw material that becomes carbon by a reaction caused by the ion beam irradiation, and the carbon layer CA causes the support member MW1 and the structure MW2 to contact each other. Glue the surfaces.
  • the purity of the carbon generated by the above reaction is preferably 99.9% or more ([Step S9]).
  • the contact area between the support member MW1 and the structure MW2 is increased by the first method as compared with the case where the structure MW2 is bonded to the upper surface of the support member MW1 without forming the groove TR, the desired support Adhesive strength between the member MW1 and the structure MW2 can be obtained.
  • FIGS. 14 (a) and 14 (b) A second method for bonding the support member and the structure according to this embodiment will be described with reference to FIGS. 14 (a) and 14 (b).
  • 14A and 14B are cross-sectional views when a rectangular parallelepiped structure MW2 (for example, the member MW) is fixed to the upper surface of the support member MW1 (for example, the movable portion 4 of the acceleration sensor SSp having the starting structure), and It is sectional drawing in the case of fixing structure MW2 (for example, member MW) with a part lacking in the upper surface of support member MW1 (for example, movable part 4 of acceleration sensor SSp of a starting structure). The following description will be given with reference to the flowchart shown in FIG.
  • the FIB apparatus cuts out a desired holding body SM2 from the member storage site.
  • the cut out structure MW2 can be held by the manipulator 15 (see FIG. 9).
  • Step S6 based on the position information of the mass addable region of the structure MW2 extracted from the database 86, the shape and size of the part of the support member MW1 where the structure MW2 is bonded are measured by the SEM. These data are stored in the database 86 ([Step S6]).
  • the installation position and the like of the holding body SM determined from the shape and dimensions of the part to which the structure MW2 is bonded are extracted from the database 86. Then, according to the conditions, the holder SM is bonded to a predetermined position on the upper surface of the support member MW1 ([Step S7]).
  • the FIB apparatus uses the manipulator 15 to move the holding body SM to a predetermined position on the upper surface of the support member MW1, and irradiates the ion beam.
  • a gas raw material that becomes carbon is irradiated by a reaction by irradiation of an ion beam, and the contact surfaces of the support member MW1 and the holding body SM are bonded by the carbon layer CA.
  • the purity of the carbon generated by the above reaction is preferably 99.9% or more.
  • the holding body SM is bonded to the upper surface of the support member MW1 in consideration of the position of the structure MW2 fixed to the support member MW1 in a later step. Further, the holding body SM may be singular or plural.
  • the FIB apparatus cuts out a desired structure MW2 from the member storage ([Step S5]).
  • the cut out structure MW2 can be held by the manipulator 15.
  • the FIB apparatus uses the manipulator 15 to transfer the cut structure MW2 to a predetermined position surrounded by the holding body SM on the upper surface of the support member MW1, and to the position surrounded by the holding body SM. Drop ([Step S8]).
  • the bonding conditions and the like of the structure MW2 are extracted from the database 86.
  • the FIB apparatus irradiates the ion source, and at the same time, irradiates a gas raw material that becomes carbon by the reaction by the ion beam irradiation, and the carbon layer CA causes the holding body SM, the structure MW2, and the support member MW1
  • the respective contact surfaces with the structure MW2 are bonded.
  • the purity of the carbon generated by the above reaction is preferably 99.9% or more ([Step S9]).
  • the second method since the number of contact points between the support member MW1 and the structure MW2 is increased as compared with the case where the structure MW2 is bonded to the upper surface of the support member MW1 without using the holding body SM, the desired support is achieved. Adhesive strength between the member MW1 and the structure MW2 can be obtained.
  • FIGS. 15 (a) and 15 (b) A third method for bonding the structure and the support member according to this embodiment will be described with reference to FIGS. 15 (a) and 15 (b).
  • 15A and 15B are cross-sectional views when a rectangular parallelepiped structure MW2 (for example, the member MW) is fixed to the upper surface of the support member MW1 (for example, the movable portion 4 of the acceleration sensor SSp having the starting structure), and It is sectional drawing in the case of fixing structure MW2 (for example, member MW) with a part lacking in the upper surface of support member MW1 (for example, movable part 4 of acceleration sensor SSp of a starting structure). The following description will be given with reference to the flowchart shown in FIG.
  • the FIB apparatus cuts out a desired structure MW2 from the member storage ([Step S5]).
  • the cut out structure MW2 can be held by the manipulator 15 (see FIG. 9).
  • Step S6 based on the position information of the mass addable region of the structure MW2 extracted from the database 86, the shape and size of the part of the support member MW1 where the structure MW2 is bonded are measured by the SEM. These data are stored in the database 86 ([Step S6]).
  • the FIB apparatus uses the manipulator 15 to transfer the cut structure MW2 to a predetermined position on the upper surface of the support member MW1, and causes the ion beam to move. Simultaneously with the irradiation, a gas raw material that becomes carbon is irradiated by a reaction caused by irradiation with an ion beam, and the contact surfaces of the support member MW1 and the structural body MW2 are bonded by the carbon layer CA.
  • the purity of the carbon generated by the above reaction is preferably 99.9% or more ([Step S8]).
  • the processing positions and processing conditions of the support member MW1 and the structure MW2 determined from the shape and dimensions of the part to which the structure MW2 is bonded are extracted from the database 86.
  • the FIB apparatus irradiates the ion beam to the lower side surface of the structure MW2 and the upper surface of the surrounding support member MW1 to which the structure MW2 is bonded, and performs plasma etching to the lower side surface of the structure MW2.
  • the upper surface of the surrounding support member MW1 to which the structure MW2 is bonded is roughened ([Step S7]).
  • the bonding conditions and the like of the structure MW2 are extracted from the database 86.
  • the FIB apparatus irradiates the ion source and simultaneously irradiates a gas raw material that becomes carbon by a reaction caused by the ion beam irradiation, and the carbon layer CA causes the support member MW1 and the structure MW2 to contact each other. Glue the surfaces.
  • the purity of the carbon generated by the above reaction is preferably 99.9% or more.
  • the surface roughness of the support member MW1 and the structure MW2 is approximately the same as the particle size of carbon generated by the reaction. It is desirable that [Step S9].
  • the third method increases the area where the carbon of the support member MW1 and the structural body MW2 adheres more than when the surface of the support member MW1 and the structural body MW2 is not roughened. Adhesive strength between the member MW1 and the structure MW2 can be obtained.
  • the bonding portion of the structure MW2 is irradiated with an ion beam FB1, for example, an oxygen beam, to bond the structure MW2.
  • a dangling bond may be formed in advance on the surface of the portion.
  • a dangling bond can be formed on the surface of the joint portion of the structure MW2 by irradiating the ion beam FB1 with the structure MW2 fixed to the manipulator MA directed in a predetermined direction.
  • the surface of the joint portion of the structure MW2 is activated, and the adhesive strength between the support member MW1 and the structure MW2 is improved.
  • the adhesive strength between the support member MW1 and the structural body MW2 can be ensured, it is not necessary to form a carbon layer.
  • the ion beam FB2 having a polarity opposite to that of the ion beam FB1 irradiated to the bond portion of the structure MW2 is applied to the bond portion of the support member MW1. Irradiation may form an OH group in advance on the surface of the joint portion of the support member MW1.
  • the ion beam FB2 is irradiated to thereby form an OH group on the inner wall (side surface and bottom surface) of the groove TR, which is a joint portion of the support member MW1. Can be formed.
  • the adhesive strength between the support member MW1 and the structure MW2 is improved by forming an OH group at the joint portion of the support member MW1 and forming a dangling bond of silicon at the joint portion of the structure MMW2.
  • the manipulator that holds the stage ST or the structure 2 on which the support member MW1 is mounted.
  • a bias voltage may be applied to MA.
  • bias voltages having different polarities may be applied to the stage ST on which the support member MW1 is mounted and the manipulator MA that holds the structure MW2.
  • the FIB apparatus includes a central control unit 191, a mode selection screen 192, a database 193, an ion beam control unit 194, a sample stage control unit 195, and the like.
  • the database 193 stores various data.
  • a structure library 197 (DB1) that stores member data 196 such as the specification and address of each member in the member storage, and actual measurement data of the shape and dimensions of each member.
  • DB2 structure library
  • DB3 for storing machining condition data 200 such as machining positions and machining conditions of each member.
  • the central control unit 191 selects a desired bonding method by the designer from the first to sixth methods for bonding the support member and the structure via the mode selection screen 192 ( Mode input 203), a necessary structure is selected from the structure library DB1, and necessary data such as the processing position and material information of the support member are selected from the CAD data part DB2 and the processing condition data part DB3.
  • the sequence shown in the selected bonding method is executed by the central control unit 191, and control information is sent to the ion beam control unit 194 and the sample stage control unit 195.
  • the shape and dimensions of the support member or the structure actually measured by the SEM 51 or the like are sent to the CAD data part DB2, and converted into the beam control data 202 by the central control part 191 based on this.
  • various MEMS having different structure / physical property parameters are formed on a semiconductor wafer in advance, and based on the correlation diagram between the structure / physical property parameters and the device characteristics, a starting point is obtained.
  • the MEMS having the structure is selected, and the MEMS having the desired structure is directly processed (directly shaped) to form the MEMS having the desired structure.
  • the manufacturing throughput of MEMS can be improved.
  • the MEMS processing method and the processing apparatus thereof have been described, but application of the present embodiment is not limited to the manufacture of MEMS.
  • the present embodiment may be applied to the manufacture of fine structures other than MEMS, the manufacture of optical devices, the manufacture of semiconductor integrated circuit devices formed on a silicon substrate, and TEM (Transmission-Electron-Microscope) observation.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

Le problème abordé par la présente invention est d'améliorer le rendement de production de microstructures et d'améliorer la fiabilité des microstructures. Pour résoudre ce problème, l'invention porte sur un procédé de production de microstructure qui consiste à extraire des premières informations de position pour une marque de reconnaissance de position formée sur la surface principale d'un élément de support et des secondes informations de position pour une zone de traitement de l'élément de support, et à détecter, à partir des premières informations de position et des secondes informations de position, la position relative de la zone de traitement de l'élément de support qui a la marque de reconnaissance de position comme point de départ. Ensuite, la zone de traitement de l'élément de support est traitée sur la base des informations de position relative pour la zone de traitement de l'élément de support qui a la marque de reconnaissance de position comme point de départ.
PCT/JP2016/058686 2016-03-18 2016-03-18 Procédé de traitement de microstructure et appareil de traitement de microstructure WO2017158819A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021070950A1 (fr) * 2019-10-10 2021-04-15 ＮａｔｕｒｅＡｒｃｈｉｔｅｃｔｓ株式会社 Programme, dispositif d'aide à la conception et procédé d'aide à la conception
JP6993550B1 (ja) 2020-10-12 2022-01-13 ＮａｔｕｒｅＡｒｃｈｉｔｅｃｔｓ株式会社 プログラム、設計支援装置、設計支援方法、および構造体の製造方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH10340700A (ja) * 1997-06-04 1998-12-22 Canon Inc 微細加工方法および微細加工装置
JP2004249457A (ja) * 2003-01-31 2004-09-09 Canon Inc 物体運搬方法、物体運搬装置、製造方法および製造された装置
JP2010232185A (ja) * 2010-06-03 2010-10-14 Hitachi High-Technologies Corp 試料加工装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10340700A (ja) * 1997-06-04 1998-12-22 Canon Inc 微細加工方法および微細加工装置
JP2004249457A (ja) * 2003-01-31 2004-09-09 Canon Inc 物体運搬方法、物体運搬装置、製造方法および製造された装置
JP2010232185A (ja) * 2010-06-03 2010-10-14 Hitachi High-Technologies Corp 試料加工装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021070950A1 (fr) * 2019-10-10 2021-04-15 ＮａｔｕｒｅＡｒｃｈｉｔｅｃｔｓ株式会社 Programme, dispositif d'aide à la conception et procédé d'aide à la conception
JP6993550B1 (ja) 2020-10-12 2022-01-13 ＮａｔｕｒｅＡｒｃｈｉｔｅｃｔｓ株式会社 プログラム、設計支援装置、設計支援方法、および構造体の製造方法
JP2022063853A (ja) * 2020-10-12 2022-04-22 ＮａｔｕｒｅＡｒｃｈｉｔｅｃｔｓ株式会社 プログラム、設計支援装置、設計支援方法、および構造体の製造方法

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