WO2017140579A1 - Structure verticale d'un demi-pont - Google Patents

Structure verticale d'un demi-pont Download PDF

Info

Publication number
WO2017140579A1
WO2017140579A1 PCT/EP2017/052947 EP2017052947W WO2017140579A1 WO 2017140579 A1 WO2017140579 A1 WO 2017140579A1 EP 2017052947 W EP2017052947 W EP 2017052947W WO 2017140579 A1 WO2017140579 A1 WO 2017140579A1
Authority
WO
WIPO (PCT)
Prior art keywords
switching element
heat conduction
plane
symmetry
converter according
Prior art date
Application number
PCT/EP2017/052947
Other languages
German (de)
English (en)
Inventor
Manuel Blum
Marek Galek
Monika POEBL
Martin Schulz
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2017140579A1 publication Critical patent/WO2017140579A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10166—Transistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/049—Wire bonding

Definitions

  • a vertical structure of a half-bridge The present invention relates to a power converter with egg ⁇ ner half-bridge, having a first and a second switching element, and having a heat conducting plate as a carrier of the first switching element.
  • Power converters are used to convert an injected current into an output current in which a parameter such as the voltage or the frequency is changed. Accordingly, under failed ⁇ det to different types of converters with which alternating current is directed into direct current, eg rectifiers, inverters, with which direct current is directed into alternating current and inverter with which an alternating current is directed to another AC with a different frequency. All of these types of power converters are affected by the present invention. Also with respect of the scope the present invention is not limited to a clamping ⁇ voltage range. Thus, both low voltage applications as well as medium and high voltage applications are conceivable. Also with regard to the technology of the power semiconductors, there are no restrictions here.
  • Power converters are usually constructed with one or more half-bridges. Such a half-bridge is coupled, for example, to a DC voltage intermediate circuit.
  • This can be a high-side switch as a first switching element and a low-side switch as a second switching element processin ⁇ ren.
  • the high-side switch and the low-side switches are typically on and off alternately in the operation of the converter , Since the leads to the switches or circuit breakers form inductors, when switching the switch voltage spikes, which can lead to losses, disturbances or damage.
  • the inductances relevant for switching or commutating are called Commutation Inductivities respectively
  • the object of the present invention is therefore to provide a power converter in which both high
  • a first heat conduction plate as a carrier of the first
  • the first heat conducting plate to a symmetry plane ⁇ to the second heat conduction plate is arranged at a second Kon ⁇ clock for the second switching element to the first contacts for the first switching element and symmetrically with respect to -
  • the first heat conduction plate and the second nickellei ⁇ tion plate are each parallel to the plane of symmetry.
  • Switching element with a second load output contact of the two ⁇ th switching element directly electrically connected.
  • a positive pole of the first switching element is separated from a negative pole of the second switching element only by an insulating film.
  • the positive pole and the negative pole thus represent electrically separate contacts that can be contacted with the high side or the low side of the intermediate circuit.
  • the vertically above one another in the direction perpendicular to the plane of symmetry structure of the two contacts (Mi ⁇ nuspol and positive pole) also results in a reduced circuit inductance.
  • a four-layer structure of the half-bridge may be selected.
  • a first layer is the first heat conduction plate and in a second
  • the four layers are preferably located in a direction perpendicular to the plane of symmetry flush immediacy ⁇ bar above the other. It is particularly advantageous if the construction height of the second and third layer is determined by the respective contacts (first load output contact and positive pole in the second layer or second load output contact and negative pole in the third layer).
  • the two switching elements should be designed structurally less high than the individual contacts, so that the switching elements do not touch, and the contacts are used practically as a spacer for the heat conduction plates but also for the switching elements. Since the switching elements are preferably located in the middle between the respective contacts and the contacts are higher than the switching elements, results between the switching elements, a distance or a space.
  • the first switching element and the second switching element have in one direction perpendicular to the plane of symmetry a predetermined distance.
  • This distance can be specified in terms of the required insulation or to be incurred Potentialun ⁇ ter Kunststoff.
  • This predetermined distance can be easily adjusted by the height of the contacts of the switching elements.
  • the space between the first and second switching element may be filled with a molding compound.
  • This molding compound is preferably an insulating plastic. It not only increases the insulation resistance of the half-bridge, but also ensures protection of the switching elements against environmental influences.
  • the two heat conduction plates are IMS plates
  • the two load output contacts and the positive pole and the negative pole are each ⁇ Weil designed as copper bars, which are each mounted directly on the respective heat conduction plate.
  • the contacts as copper bars thus have the multiplegnacali ⁇ ity as spacers, as a good electrical conductor and as a good thermal conductor.
  • the two switching elements of the half-bridge may be IGBTs. Alternatively, however, any other semiconductor switching elements can be used. It is advantageous, however, if the performance path of the respective
  • the half bridge can be connected to a busbar via a busbar
  • Capacitor bank be connected. Due to the symmetry of the half bridge, the geometry of the shift rail can also be kept simple.
  • FIG. 1 shows a schematic circuit diagram of a power converter with a half-bridge
  • FIG. 4 shows the three-dimensional structure of a half-bridge according to the present invention.
  • a power converter has, by way of example, the schematic structure of FIG. 1.
  • the centerpiece is a half-bridge having a first switching element S1 and a second switching element S2.
  • the the switching elements Sl and S2 are each bridged in ⁇ by a free-wheeling diode Dl or D2 ⁇ .
  • the switch Sl is connected to a center tap M via a line with a line inductance LI.
  • the second switching element S2 is connected by a line having the lead inductance L2, is joined to the center tap ⁇ M.
  • a DC link is ⁇ closed, which is symbolized here by a capacitor C.
  • this capacitor C is connected to the two contacts of the respective switching elements Sl and S2, which are remote from the center tap M.
  • the voltage curve at the output of the converter is in
  • FIG 2 shows an example.
  • a corresponding switching signal U s is shown.
  • One of the switching elements Sl is to be a time turned rela ⁇ hung as S2 and the other off.
  • the conduction inductances LI to L3 result in a commutation voltage peak 1. This is, for example, above a limit value U g and is therefore not tolerable.
  • FIG. 4 An example of this is shown in FIG. 4 in a perspective view.
  • the exemplary half-bridge shown in FIG. 4 has a plane of symmetry (which is not shown in the FIG) to which a first heat conduction plate 3 and a second heat conduction plate 4 extend in parallel.
  • the two heat ⁇ line plates 3 and 4 are carriers of the switching elements Sl and S2.
  • the two switching elements Sl and S2 are arranged in the example of FIG 4 on the mutually facing sides of the heat conduction plates 3 and 4.
  • the MFiel ⁇ le place of switching elements is symmetrical to the symmetry level, but the actual arrangement and orientation of the switching elements Sl and S2 need not be symmetrical to one another in relation to one another. Optionally, it is point symmetric.
  • the circuit elements Sl and S2 may be formed as IGBTs, as is sketchily indicated in FIG 4. Accordingly, the switching element Sl has drain 5 and source 6. In addition, 4 bonding wires 8 between drain 5 and source 6 are indicated in FIG. Of the second switching element S2, bonding wires 9 can be seen in FIG.
  • Switching element Sl is for example a high-side switch is.
  • Source 6 a last output contact is therefore associated with 10 and drain 5, a plus pole 11.
  • Analogously, is the drain of the second switching element S2, a load leaving ⁇ contact 12 and the source of the second switching element S2, a Minuspolitch 13 assigned.
  • the contacts 10, 11, 12 and 13 may be formed as copper platelets. In addition, may be equal in size each un ⁇ behind the other. Their thickness in the direction perpendicular to the plane of symmetry determines the distance between the two bathlei ⁇ tion plates 3 and 4.
  • the two load output contacts 10 and 12 are mounted directly to each other, for example screwed together and outside the saulei ⁇ tion plates 3 and 4 are added immediately.
  • the two load output contacts 10 and 12 are formed as a one-piece Kunststoffele ⁇ ment.
  • the plus-pole contact 11 and the minus-pole contact 13 are electrically separated from one another by an insulation layer or insulation film lying in the plane of symmetry.
  • the positive pole contact 11 is applied directly to the heat conduction ⁇ plate 3 and the negative terminal 13 directly on the heat conduction plate. 4
  • a first contact block consisting of the two load output contacts 10 and 12 and a second contact block, best From the plus pole contact 11, the negative pole contact 13 and the insulation 14 therebetween, have a lateral distance to the first contact block, by which a space 15 is defined, which is also delimited by the heat conduction plates 3 and 4.
  • a space 15 is defined, which is also delimited by the heat conduction plates 3 and 4.
  • the switching elements Sl and S2 are.
  • the height of this space 15 can be determined for example by a minimum distance of the bonding wires 8 and 9 for a given geometry of the bonding wires. Such a minimum distance may be due to a predefined dielectric strength.
  • the distance between the switching elements Sl and S2 or their bonding wires 8 and 9 can be adjusted, for example, simply by the height of the copper platelets used for the contacts 10 to 13.
  • the thickness of the insulating film 14 plays virtually no role.
  • the space 15 may be formed by a so-called "molding compound” which is the first load output contact 10 and the positive pole contact 11 with interposed first switching element Sl is formed The height of this second layer
  • the first switching element Sl should be slightly lower.
  • the third layer consisting of the second load output contact 12 and the negative pole contact 13 (the insulating layer 14 is ignored here because of their small layer thickness) with interposed second switching element S2.
  • the fourth layer which is formed by the second heat conduction plate 4 as a carrier of the third layer.
  • the third and the fourth layer are symmetrical with respect to the first and second layer, if appropriate only with the exception of the orientation of the switching elements S1 and S2.
  • both the heat dissipation and the size of the circular inductance can be optimized, because it can be used an additional heat conduction plate and the geometry of the lines to the switching elements can be better designed in view of the resulting inductance become.
  • geeig ⁇ items copper bars can be used which are preferably up brought to IMS circuit boards that form the heat conduction plates or soldered.
  • the plus pole contact 11 and the Minuspolutton 13 with Between the seats ⁇ rule lying insulation 14 can be realized as a busbar, to the low inductance capacitor bank a reasonable can be concluded. So a 4x5 matrix of capacitors as an intermediate circuit capacity to the Halbbrü ⁇ bridge example, can be connected.
  • the heat conduction plate used for heat dissipation for each switching element can be customized for the switching element opti ⁇ mized.
  • the symmetry refers only to the basic arrangement of the switching elements and Heat conduction plates, but not on the exact geometry of the heat conduction plates with each other.

Abstract

L'invention concerne un convertisseur à vitesse de commutation supérieure et à dissipation thermique améliorée. A cet égard, l'invention porte sur un convertisseur doté d'un demi-pont, qui présente un premier et un second élément de commutation (S1, S2), ainsi que d'une première plaque de conduction thermique (3) en tant que support du premier élément de commutation (S1). Ledit convertisseur comporte en outre une seconde plaque de conduction thermique (4) en tant que support du second élément de commutation (S2). La première plaque de conduction thermique (3) dotée de premiers contacts (10, 11) pour le premier élément de commutation (S1) est agencée de manière symétrique, par rapport à un plan de symétrie, à la seconde plaque de conduction thermique (4) dotée de seconds contacts (12, 13) pour le second élément de commutation (S2). La première plaque de conduction thermique (3) et la seconde plaque de conduction thermique (4) sont disposées chacune de manière parallèle au plan de symétrie.
PCT/EP2017/052947 2016-02-18 2017-02-10 Structure verticale d'un demi-pont WO2017140579A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016202509.0 2016-02-18
DE102016202509.0A DE102016202509A1 (de) 2016-02-18 2016-02-18 Vertikaler Aufbau einer Halbbrücke

Publications (1)

Publication Number Publication Date
WO2017140579A1 true WO2017140579A1 (fr) 2017-08-24

Family

ID=58046634

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2017/052947 WO2017140579A1 (fr) 2016-02-18 2017-02-10 Structure verticale d'un demi-pont

Country Status (2)

Country Link
DE (1) DE102016202509A1 (fr)
WO (1) WO2017140579A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63157677A (ja) * 1986-12-19 1988-06-30 R F Enajii Kk ブリツジ形インバ−タ装置
EP1662568A2 (fr) * 2004-11-24 2006-05-31 General Electric Company Module de puissance, branche de phase et onduleur à trois phase
US20120112366A1 (en) * 2009-07-08 2012-05-10 Centre National De La Recherche Scientifique Power Electronic Module
EP2546874A1 (fr) * 2011-07-11 2013-01-16 International Rectifier Corporation Module de puissance en demi-pont empilé
WO2015008333A1 (fr) * 2013-07-16 2015-01-22 三菱電機株式会社 Dispositif à semi-conducteurs

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6166464A (en) * 1998-08-24 2000-12-26 International Rectifier Corp. Power module
JP5067267B2 (ja) * 2008-06-05 2012-11-07 三菱電機株式会社 樹脂封止型半導体装置とその製造方法
JP5434914B2 (ja) * 2008-06-12 2014-03-05 株式会社安川電機 パワーモジュールおよびその制御方法
JP5587275B2 (ja) * 2011-10-20 2014-09-10 株式会社豊田中央研究所 半導体モジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63157677A (ja) * 1986-12-19 1988-06-30 R F Enajii Kk ブリツジ形インバ−タ装置
EP1662568A2 (fr) * 2004-11-24 2006-05-31 General Electric Company Module de puissance, branche de phase et onduleur à trois phase
US20120112366A1 (en) * 2009-07-08 2012-05-10 Centre National De La Recherche Scientifique Power Electronic Module
EP2546874A1 (fr) * 2011-07-11 2013-01-16 International Rectifier Corporation Module de puissance en demi-pont empilé
WO2015008333A1 (fr) * 2013-07-16 2015-01-22 三菱電機株式会社 Dispositif à semi-conducteurs

Also Published As

Publication number Publication date
DE102016202509A1 (de) 2017-08-24

Similar Documents

Publication Publication Date Title
EP0427143B1 (fr) Module à semi-conducteur de puissance
DE102015115271B4 (de) Elektronikbaugruppe mit entstörkondensatoren und verfahren zum betrieb der elektronikbaugruppe
DE19732402B4 (de) Elektrische Busanordnung zur Gleichstromversorgung von Schaltungselementen eines Wechselrichters
DE3420535C2 (de) Halbleiter-Modul für eine schnelle Schaltanordnung
DE102010002627B4 (de) Niederinduktive Leistungshalbleiterbaugruppen
EP2532084B1 (fr) Composant électronique pour commuter une puissance électrique
DE10037379B4 (de) Modular aufgebauter Stromrichter
EP3206468B1 (fr) Convertisseur doté d'un circuit intermédiaire à tension continue
EP3404818B1 (fr) Dispositif de semi-conducteurs
DE202015004662U1 (de) Zwischenkreiskondensatormodul mit niederinduktiven Busbar-Verbindungen
EP1088386A1 (fr) Bloc de composants a demi-pont
EP2989660B1 (fr) Empilement de semi-conducteurs pour convertisseur équipé de condensateurs d'amortissement
EP0443378A2 (fr) Commutateur électronique de puissance
WO2018095623A1 (fr) Condensateur, en particulier condensateur de circuit intermédiaire pour un système multiphasé
EP3756221A1 (fr) Module de puissance comprenant un composant électronique de puissance sur une plaque de substrat et circuit électronique de puissance comprenant un tel module de puissance
DE102020214045A1 (de) Halbbrücke für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs, Leistungsmodul für einen Inverter und Inverter
DE102004027185B4 (de) Niederinduktives Halbleiterbauelement mit Halbbrückenkonfiguration
DE10054489A1 (de) Leistungs-Umrichtermodul
WO2017140579A1 (fr) Structure verticale d'un demi-pont
WO2022128999A1 (fr) Onduleur
EP1364449A1 (fr) Conception d'un circuit servant la commutation de courants
EP1632117A1 (fr) Composant electronique pour la commutation d'une alimentation electrique
DE102021203704A1 (de) Halbbrücke, Leistungsmodul und Inverter für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs
DE19541111B4 (de) Leistungswandler
WO2024028275A1 (fr) Module semiconducteur de puissance

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17705332

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17705332

Country of ref document: EP

Kind code of ref document: A1