EP3756221A1 - Module de puissance comprenant un composant électronique de puissance sur une plaque de substrat et circuit électronique de puissance comprenant un tel module de puissance - Google Patents

Module de puissance comprenant un composant électronique de puissance sur une plaque de substrat et circuit électronique de puissance comprenant un tel module de puissance

Info

Publication number
EP3756221A1
EP3756221A1 EP19720483.7A EP19720483A EP3756221A1 EP 3756221 A1 EP3756221 A1 EP 3756221A1 EP 19720483 A EP19720483 A EP 19720483A EP 3756221 A1 EP3756221 A1 EP 3756221A1
Authority
EP
European Patent Office
Prior art keywords
power
substrate plate
power module
component
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19720483.7A
Other languages
German (de)
English (en)
Inventor
Jörg Strogies
Bernd Müller
Klaus Wilke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP3756221A1 publication Critical patent/EP3756221A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body

Definitions

  • Power module with a power electronic component on a substrate plate and power electronic circuit with such a power module
  • the invention relates to a power module with a performance-electronic first component, which is mounted on a Ers th substrate plate. Moreover, the inven tion relates to a power electronic circuit with a variety of power modules.
  • Power electronic circuits are usually adaptable to an associated given application. These applications differ individually, which results in the design of power electronic circuits and their manufacture a considerable effort. The individual application cases stand in the way of automating the production of power modules in particular.
  • the object of the invention is to provide a power module or a power electronic circuit, with the power module power electronic GmbHun conditions with a reduced effort in the design or in the production should generate, especially pay for custom-made power modules or small piece ,
  • a power electronic component ment and the associated substrate plate a bathelektro African unit - hereinafter referred to as "basic unit” and thus smallest form of the power module - form, which can be pre-assembled, so that the power module by stacking and / or juxtaposing said Grundeinhei th easily adapted to different applications
  • the combination of a plurality of basic units, that is, for example, the stack, can then be further pre-assembled to build power electronic circuits with different numbers of stacked and / or stacked modules
  • an upper side of the second component is electrically connected to a lower side of the first substrate plate.
  • top and bottom are not dependent on an installation position or positioning of the power module during operation. Rather, the components are surface-mounted components, where these components are usually mounted on the top of a sub strate and indeed with the bottom of the compo management. Thus, regardless of the installation position of the power module, a reference point results from the surface mounting, which also serves for the definition of "top” and "bottom” in the following.
  • An electrical connection of the upper side of the second component with an underside of the first substrate plate has the advantage that the component used can communicate electrically with both the first substrate plate via its underside and with the second substrate plate via its upper side.
  • a component can be used who has the electrical contact surfaces both at its top and at its bottom.
  • According to another embodiment of the invention is hen vorgese that the second component contacted with the first device via an electrical connection path.
  • an electrical connection path By providing such an electrical connection path, it is advantageously possible for the first component and the second component to communicate with each other. This allows additional Liche applications in the design of the realized by the power module electrical circuit, as an electrical interconnection of the components is possible directly.
  • the electrical connection path between the first component and the second component as Siritak orientation, in particular as a via, be formed.
  • a particularly direct contacting is advantageously possible, wherein the components on this side and beyond the first
  • Circuit carrier are thus mounted on the top and bottom of the substrate plate.
  • the via then leads to an electrical connection between the construction elements in the shortest possible way. As a result, higher currents can flow between the components, thereby allowing an efficient power electronic circuit to be constructed.
  • the electrical connection path is designed as a half-bridge, which provides a phase contact available.
  • This makes it possible, for example, to realize a power electronic circuit (using several other power modules at the same time) in which a direct current is converted into a single-phase or multi-phase alternating current.
  • the phase contacts provide a connection possible speed available so that the AC power of the power module or realized with the power modules electrical circuit can be delivered. This makes it possible to produce power electronic circuits having a high power density per unit volume.
  • the spacers can also serve as spacers in order to realize a defined electrical contacting of the electronic components.
  • the spacers have electrical conductivity paths and are realized so that they
  • spacers can also be arranged with the same tech nical effect (s) or partially the same technical Ef fect (s) between the first substrate plate and a first base plate, wherein the first component is connected on an upper side with the first base plate.
  • the first base plate can advantageously also serve as a circuit carrier.
  • the spacers can also be provided that they are designed to be electrically conductive. This advantageously makes it possible for the at least one spacer to have conductor tracks on the first substrate plate and the first base plate to be electrically connected to one another. tend to connect. In the same way, the first substrate plate and the second substrate plate can be connected in an electrically conductive manner to the spacers, it also being possible for interconnects to be connected to one another on the substrate. Electrically conductive spacers allow here by a complex interconnection of the components underei nander, whereby the design flexibility for the realization of power electronic circuits is advantageously increased.
  • the power modules according to the invention can be designed in a confined space and fulfill a wide variety of electrical tasks.
  • a particular embodiment of the invention provides that the first base plate and / or the second base plate has or have a cooling structure.
  • a cooling structure As a result, it is possible, please include, reliably and quicklycardment the resulting in power electronic circuits heat during operation Ren. Due to the high compactness of the power module, it is advantageous to connect the cooling structures directly to the base plates, resulting in short transmission paths for the heat to be dissipated.
  • the cooling structure can beispielswei se consist of a fin cooler, which is connected to the corre sponding base plate or forms with this a common Sames component (one-piece production).
  • the embodiment of the power module according to the invention has the advantage that this power module can be combined with power modules of the same type to form power electronic circuits whose function can be adapted with little effort to different applications.
  • this power module can be combined with power modules of the same type to form power electronic circuits whose function can be adapted with little effort to different applications.
  • by connecting several power modules in parallel it can be achieved that the power electronic circuit generated by the power modules can be adapted to different required power ranges.
  • the object stated above is also achieved by a power electronic circuit in which the described power modules are used, wherein tion modules are each electrically interconnected by merger.
  • the power electronic circuit generated in this way can be generated due to the modular structure with a plurality of identical parts, which minimizes the manufacturing effort advantageous.
  • there is the advantage that a disassembly of the power electronic circuit can be performed with a simple means. Therefore, for example, defective power modules can be exchanged with little effort.
  • An embodiment of the already mentioned cruktroni rule circuit provides that the power modules each have two out as the first switching element and as a second switching element formed power electronic components.
  • the first switching element and the second switching element are connected to a common Lei device connection, which can form a phase contact in particular for a phase of an electrical rotary current.
  • a common power connection is also called a half-bridge.
  • the first switching element also has a designed as a positive pole first Leis connection terminal and the second switching element on a pole as a negative second power connection. This makes it possible to switch the power connection through the switching elements alternately on the negative pole and the positive pole, which can generate an alternating current.
  • the power electronic circuit can thus be operated advantageously as mo dular constructed frequency converter.
  • the power modules are divided into three groups, each having the same number of power modules, wherein in each of the three groups, the common Lei processing connections are electrically connected to each other and form three common power terminals, each with a common phase contact.
  • This circuit makes it possible to Therefore, some generate a three-phase three-phase current, wherein the interconnection of the power modules to groups also allows the switching of higher currents. As many power modules are connected in parallel, the required current can be switched.
  • the power modules can also be supplied with a DC voltage
  • the ers th power connections of all switching elements must be electrically connected to each other and Bil a common negative pole, while the second power terminals of all Wegele elements are also electrically connected together to form a common positive pole.
  • a series circuit of the power modules is present.
  • the basic units are connected in a suitable manner, see Fi gur 1, whereby a series circuit and thus a branch of an inverter can be generated.
  • the design of these units is done in such a way that a series connection by Sta peln can be realized in a simple manner and thus opens up large variations.
  • a combination of parallel and series connection may be present a combination of parallel and series connection. This is the case, for example, when two or more basic units are stacked and these stacks are then switched in a series.
  • stack for example, a series circuit is rea lformat and by the juxtaposition of the series maral ended stack of basic units, a parallel connection is realized.
  • the electrical connection of the common power connections is formed in each case by a first electrical connection and a second electrical connection.
  • This configuration is easy to install by placing the power modules in rows one behind the other, which automatically forms the electrical connection.
  • the power electronic components are preferably designed as a nude chip. This can be contacted directly with the sub stratplatte, for example, by a sintered connection, which also ensures an electrical contact Tet.
  • the substrate plate may preferably be made of a ceramic. This does not conduct the electrical current, so that at the same time electrical insulation is ensured. Therefore, an electronic circuit can be realized by structuring an electrically conductive coating on the substrate plate. As a result videswei se contact surfaces for contacting the power electronic components are made available.
  • FIG. 1 shows an embodiment of the power module according to the invention as a side view
  • Figure 2 is a power electronic circuit with a
  • FIG. 3 schematically shows a circuit diagram for contacting power modules according to FIG. 1 in a power-electronic circuit according to FIG. 2,
  • FIG. 4 shows a plan view of a stack of two
  • a power module 11 is shown (Systemgren zen are shown in dashed lines), which also shows how several power modules can be combined into a cruktroni rule circuit.
  • the power module 11 consists of a first component 31 and a second component 32, which are each designed as a first transistor 44 and a second transistor 45. These can - in particular special if as connected here in series - form a circuit with a half-bridge 64, wherein the circuit in Fi gur 1 is indicated and to figure 3 will be explained in more detail below.
  • the first component 31 and the second component 32 are each Weil mounted on a first substrate plate 12 and a second substrate plate 13. Here are different Lei terbahnen on the first substrate plate 12 and the second substrate plate 13 are used.
  • the second sub stratplatte 13 is mounted on a second base plate 19, where in this case an electrical contact can take place, as indicated in Figure 1.
  • the first component 31 is also electrically kontak over a first base plate 18 benefits.
  • spacers 17, 17 a are provided, which plate an electrical contact between the individual plates, ie the first substrate 12, the second substrate plate 13, the first base plate 18 and the second base plate 19 allow.
  • conductor tracks which are provided on these plates are electrically contacted with each other.
  • the elec- tronic contacting is via solder joints 23, of de nen Figure 1 by way of example only some with reference numerals verse hen.
  • the various strip conductors form a positive pole 46, a negative pole 47 and a phase contact 48.
  • a positive voltage can be applied to the positive pole 46 and the negative pole 47.
  • An alternating voltage can then be tapped via the phase contact 48.
  • the power module 11 according to FIG. 1 is thus to be used as a converter. The function of this order is explained in more detail to Figure 3.
  • the half-bridge 64 is provided as a via. This has the advantage that the first component 31 and the second component 32 can be contacted with each other in a very direct way so that short electrical paths are realized. The tap of the phase contact can then take place via a conductor track on the first substrate plate 12.
  • cooling structures 21, 22 are realized, which are formed as Rip penkühler. In this way, the heat generated in the first electronic component 31 and the second electronic component 32 can be dissipated via the substrate plates 12, 13 and base plates 18, 19, respectively. The short distances enable effective cooling.
  • FIG. 1 can also be easily seen that the smallest te vorzufertigende unit - the basic unit - for modular production of the power modules each of the composite substrate plate 12, 13 and a component 31, 32 and possibly, nor the spacers 17, 17a.
  • Such Grundein unit here exemplified as a chip-ceramic composite (short CKV) can be produced in large quantities.
  • the substrate plate may for example consist of a ceramic, which is equipped with a variety of components. Subsequently, a separation of the respective CKV can be done for example by separating the substrate plate.
  • FIG. 2 shows how several power modules 11 according to FIG. 1 can be combined to form a power electronic circuit 42.
  • Five power modules 11 are each Weil configured in a row 43, with a total of six rows are provided.
  • FIG. 1 there is a possibility of contacting both, that is to say the first component 31 and the second component 32, which is realized in FIG. 2 for each power module 11 and is shown schematically as a circuit diagram in FIG.
  • FIG. 3 shows a capacitor 15 for completing the circuit. This serves to simplify the Dar position, wherein alternatively, a plurality of parallel switched ge capacitors can be used.
  • the condensate capacitor 15 according to Figure 3 is shown only schematically. The situation is similar with the first substrate plate 12 and the second substrate plate 13 and the power electronic components mounted thereon, which are formed by a first transistor 44 and a second transistor 45 are.
  • the first transistor 44 is connected with its source electrode to the positive pole 46, also referred to as high-side
  • the second transistor 45 is connected with its drain electrode to the minus pole 47, which is also referred to as the low-side.
  • the drain electrode of the first transistor 44 and the source electrode of the second transistor 45 are connected to each other, thereby forming a half-bridge 64 with a phase contact 48.
  • the capacitor 15 is provided with a driver circuit 49.
  • the driver circuit 49 according to FIG. 3 is shown only schematically in order to describe its function in principle.
  • the driver circuit has a controller function C as well as a sensor function S.
  • the controller function is ensured by contact lines 51 as an interface to the gate electrodes of the first transistor 44 and the second transistor 45 GE. This means that the driver circuit can control both transistors as switches more intelligently.
  • the information necessary for this function is provided by the sensor function S.
  • the sensor function is ensured via signal lines 52, with which a current flow in front of and behind the capacitor 15 as well as before and after the phase contact 48 in the half-bridge 64 can be tapped.
  • the capacitor 15 is connected to the positive pole 46 and the negative pole 47 and thus fulfills a smoothing function, the device 42 for a multi-phase operation of the power electronic scarf is required according to Figure 1.
  • the procedureelektroni cal circuit 42 of FIG 2 is modular.
  • these can be used together in three groups ver to generate from a voltage applied to the common positive terminal 46p and the common negative pole 47m DC voltage, a three-phase AC voltage to the common phase contacts 48a, 48b, 48c can be tapped.
  • the height of the maximum current to be switched determines how many of the power modules 11 must be used per phase. According to FIG. 2, there are in each case ten power modules 11 per phase. Thus, a circuit according to Figure 3 is realized for each of the power modules 11, wherein each group of power modules 11 is connected in parallel.
  • FIG 4 shows a plan view of an exemplary embodiment of the invention Aust showing a power module 11 from above.
  • the upper basic unit of a stack comprising a substrate plate 12, 13 thereon solder joints 23, which surround the device 31, for example, a power chip 50.
  • the power chip 50 can be used for example as a drain electrode, in the illustration shown here it is surrounded by four spacers 17, which are used for potential feedback.
  • the potential feedback ensures that all electrical connections - also referred to as "potentials" - are present on the mounted semiconductor components in each of the levels, top and bottom, so that they can be tapped off and contacted, so that full functionality is available at every wiring level so that the stacking and / or the juxtaposition of the "basic units" is possible.
  • the "basic units” form unit cells and are assembled as prefabricated, isolated tested units to form a complete system.
  • the resulting variable assembly results in a maximum flexibility paired with a maximum space utilization, which can be stacked and / or stacked as required Stringing together the basic units that uses existing space.
  • FIG. 4 also shows the sectional plane AA.
  • a Dar position of the section through this plane AA is shown in Figure 5.
  • FIG. 5 shows a stack of two basic units which form, for example, a power module 11.
  • Each of these basic units comprises in each case a component 31, 32, a substrate plate 12, 13, various solder joints 23 and spacers 17.
  • the spacers 17 serve, in addition to the mechanical stabilization, optionally also for potential feedback, as described above.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Combinations Of Printed Boards (AREA)
  • Inverter Devices (AREA)

Abstract

L'invention concerne un module de puissance (11) comprenant un premier composant électronique de puissance (31) et un deuxième composant électronique de puissance (32). L'invention concerne en outre un circuit électronique de puissance, dans lequel un tel module est mis en œuvre. Les composants électroniques (31, 32) selon l'invention peuvent être prémontés sur des plaques de substrat (12, 13), de façon à créer un composite puce-céramique. Ces composites puce-céramique respectifs peuvent être facilement empilés pour la fabrication du module de puissance, permettant ainsi une construction modulaire et un agencement avantageux peu encombrant. Le grand nombre de composants identiques réduit en outre le coût de la conception du circuit électronique de puissance modulaire.
EP19720483.7A 2018-04-17 2019-04-17 Module de puissance comprenant un composant électronique de puissance sur une plaque de substrat et circuit électronique de puissance comprenant un tel module de puissance Pending EP3756221A1 (fr)

Applications Claiming Priority (2)

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EP18167698.2A EP3557614A1 (fr) 2018-04-17 2018-04-17 Module de puissance pourvu d'un composant électronique de puissance sur une plaque de substrat et circuit électronique de puissance pourvu d'un tel module de puissance
PCT/EP2019/059879 WO2019201972A1 (fr) 2018-04-17 2019-04-17 Module de puissance comprenant un composant électronique de puissance sur une plaque de substrat et circuit électronique de puissance comprenant un tel module de puissance

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EP3756221A1 true EP3756221A1 (fr) 2020-12-30

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EP19720483.7A Pending EP3756221A1 (fr) 2018-04-17 2019-04-17 Module de puissance comprenant un composant électronique de puissance sur une plaque de substrat et circuit électronique de puissance comprenant un tel module de puissance

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EP (2) EP3557614A1 (fr)
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CN110993594B (zh) * 2019-11-02 2021-09-17 复旦大学 一种三维的高电压电路结构及紧凑型Marx发生器
US11469207B2 (en) 2020-05-11 2022-10-11 Micron Technology, Inc. Mitigating thermal impacts on adjacent stacked semiconductor devices
WO2022088179A1 (fr) * 2020-11-02 2022-05-05 Dynex Semiconductor Limited Conditionnement de module à semi-conducteur 3d à haute densité de puissance

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FR2765067B1 (fr) * 1997-06-19 1999-07-16 Alsthom Cge Alcatel Module d'electronique de puissance et un dispositif d'electronique de puissance pourvu de tels modules
US7030317B1 (en) * 2005-04-13 2006-04-18 Delphi Technologies, Inc. Electronic assembly with stacked integrated circuit die
DE102006018161A1 (de) * 2006-04-19 2007-10-25 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Elektronisches Bauelementmodul
US7999369B2 (en) * 2006-08-29 2011-08-16 Denso Corporation Power electronic package having two substrates with multiple semiconductor chips and electronic components
US8654541B2 (en) * 2011-03-24 2014-02-18 Toyota Motor Engineering & Manufacturing North America, Inc. Three-dimensional power electronics packages
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WO2014184846A1 (fr) * 2013-05-13 2014-11-20 新電元工業株式会社 Module électronique et procédé de fabrication associé
WO2015005181A1 (fr) * 2013-07-08 2015-01-15 株式会社 村田製作所 Élément de conversion de puissance
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WO2019201972A1 (fr) 2019-10-24
US11373984B2 (en) 2022-06-28
CN112041983A (zh) 2020-12-04
US20210151417A1 (en) 2021-05-20
EP3557614A1 (fr) 2019-10-23

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